WO2021224015A1 - Composant optoélectronique et son procédé de fabrication - Google Patents

Composant optoélectronique et son procédé de fabrication Download PDF

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Publication number
WO2021224015A1
WO2021224015A1 PCT/EP2021/060513 EP2021060513W WO2021224015A1 WO 2021224015 A1 WO2021224015 A1 WO 2021224015A1 EP 2021060513 W EP2021060513 W EP 2021060513W WO 2021224015 A1 WO2021224015 A1 WO 2021224015A1
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WO
WIPO (PCT)
Prior art keywords
light
emitting diode
reflector
carrier
diode chip
Prior art date
Application number
PCT/EP2021/060513
Other languages
German (de)
English (en)
Inventor
Daniel Richter
Daniel Leisen
Michael Betz
Original Assignee
Osram Opto Semiconductors Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors Gmbh filed Critical Osram Opto Semiconductors Gmbh
Publication of WO2021224015A1 publication Critical patent/WO2021224015A1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H01L33/60—Reflective elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
    • H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0058—Processes relating to semiconductor body packages relating to optical field-shaping elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0091—Scattering means in or on the semiconductor body or semiconductor body package
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination

Definitions

  • the application relates to an optoelectronic component, in particular a laterally emitting optoelectronic component, and a method for its production.
  • light emission in a direction running laterally to a carrier of the optoelectronic component is desirable. Furthermore, it can be desirable for the light emitted by the optoelectronic component to have a preferred direction in the plane of the light emission.
  • One object to be achieved is therefore to provide an optoelectronic component and a method for its production, the optoelectronic component being characterized in particular by lateral emission in a preferred direction.
  • the optoelectronic component comprises a carrier with a carrier surface.
  • the carrier can in particular be electrically conductive or have electrically conductive structures such as, for example, conductor tracks.
  • the Carrier be a lead frame or a circuit board such as a PCB (Printed Circuit Board).
  • the carrier has a carrier surface on which a light-emitting diode chip is arranged.
  • the light-emitting diode chip can, for example, be connected to the carrier with a connection layer such as a solder layer or a conductive adhesive.
  • the light-emitting diode chip has a main emission direction that is perpendicular to the carrier surface.
  • the radiation emitted by the light-emitting diode chip can essentially be emitted through a radiation exit area which runs parallel to the carrier surface.
  • a reflector is arranged in the optoelectronic component above the light-emitting diode chip and to the side of the light-emitting diode chip, which reflector deflects the radiation emitted by the light-emitting diode chip in a preferred direction running laterally to the carrier surface.
  • the radiation emitted by the light-emitting diode chip has precisely one preferred direction running laterally to the carrier surface. This means in particular that the radiation emission does not take place isotropically in the entire angular range of 360 ° parallel to the carrier surface. Rather, the radiation emission takes place essentially only in a single preferred direction running parallel to the carrier surface.
  • the preferred direction running laterally to the carrier surface is in particular a preferred direction running parallel or at least substantially parallel to the carrier surface.
  • the reflector arranged to the side of the light-emitting diode chip and above the light-emitting diode chip forms, in particular, a cavity in which the light-emitting diode chip is arranged, the cavity having a lateral opening having.
  • the reflector can be made in several parts, in particular in two parts. In this case, the reflector can have, for example, a lower reflector part and an upper reflector part.
  • the optoelectronic component in which the radiation emitted by the light-emitting diode chip is deflected by the reflector in a preferred direction running laterally to the carrier surface, is advantageous for all applications in which a directed emission of radiation laterally to the carrier is desired. This can be the case in particular if the radiation emitted by the light-emitting diode chip is to be coupled into a light guide which is arranged parallel to the carrier surface.
  • the reflector has a molding compound provided with reflective particles.
  • the molding compound can be applied to the carrier using a compression molding process, and the reflector can be formed in this way.
  • the molding compound has a silicone or an epoxy resin. These materials are well suited to be applied to the carrier by a compression molding process.
  • the reflective particles have T1O 2 or ZrC> 2 . These materials are distinguished in particular by the fact that they have a comparatively high refractive index and in this way increase the reflectivity of the molding compound for the radiation emitted by the light-emitting diode chip.
  • T1O2 or ZrC ⁇ particles other particles, in particular made of dielectric oxide materials, can be contained in the molding compound.
  • the light-emitting diode chip has a rectangular or square cross section which is delimited by four side surfaces.
  • the radiation is emitted from the optoelectronic component in a first direction, for example.
  • a second direction rotated by 90 ° to the first direction in a third direction rotated by 180 ° to the first direction and in a fourth direction rotated by 270 ° to the first direction, the radiation hits the reflector and is not emitted directly in these directions optoelectronic component decoupled.
  • At least one further electronic component is arranged on the carrier surface.
  • the further electronic component can in particular be a driver for the at least one light-emitting diode chip.
  • the driver can be an integrated circuit (IC), for example.
  • the further electronic component can be arranged in a cavity formed by the reflector, in which the light-emitting diode chip is also arranged.
  • the further electronic component is enclosed by the molding compound.
  • the Molding compound can in particular be the molding compound that forms at least part of the reflector.
  • the molding compound can in particular have a silicone or an epoxy resin.
  • the molding compound can have reflective particles such as T1O 2 or ZrC ⁇ particles. Enveloping the at least one further electronic component with the molding compound has the advantage that the further component is essentially invisible in the optoelectronic component and radiation emitted by the light-emitting diode chip is not absorbed by the further electronic component.
  • a radiation-permeable casing is arranged between the at least one light-emitting diode chip and the reflector.
  • the radiation-permeable casing can be applied, for example, by transfer molding or by dispensing.
  • the radiation-permeable casing preferably has a thixotropic material, which makes it easier to apply by dispensing.
  • the radiation-permeable envelope can be overmolded by the reflector in a subsequent step. It is possible for a cavity formed between the light-emitting diode chip and the reflector to be completely or partially filled by the radiation-permeable envelope.
  • a method for producing the optoelectronic component is also specified.
  • the at least one light-emitting diode chip is applied to a carrier surface of a carrier, for example to a lead frame or a circuit board.
  • the light-emitting diode chip can be applied to the carrier with a layer of solder or a conductive adhesive, for example.
  • the LED chip will in particular applied to the carrier surface in such a way that the main emission direction is perpendicular to the carrier surface.
  • a reflector is arranged above the light-emitting diode chip and to the side of the light-emitting diode chip.
  • the reflector is suitable for deflecting radiation emitted by the light-emitting diode chip in a preferred direction running laterally to the carrier surface.
  • the reflector is produced by compression molding.
  • the compression molding can in particular include compression molding, transfer molding, film assisted molding (FAM) and / or injection molding. It is possible for the reflector to be manufactured in two or more steps using different compression molding processes. For example, a lower reflector part can be produced using transfer molding and an upper reflector part can be produced using compression molding.
  • the reflector has, in particular, a molding compound, for example a silicone or an epoxy resin.
  • the molding compound can have reflective particles such as T1O 2 or ZrC> 2 particles.
  • At least one further electronic component is arranged on the carrier.
  • the further electronic component is, for example, a driver for the light-emitting diode chip.
  • the further electronic component is advantageously enclosed by the reflector during manufacture of the reflector.
  • a radiation-permeable casing is applied to the at least one light-emitting diode chip before the reflector is applied.
  • the radiation-permeable casing is formed, for example, from a thixotropic material and can be applied to the light-emitting diode chip by dispensing.
  • At least two light-emitting diode chips are arranged on the carrier and the reflector is arranged over the light-emitting diode chips in such a way that the reflector forms a dome over the light-emitting diode chips.
  • the carrier and the reflector are subsequently cut through in the area between the light-emitting diode chips in such a way that two optoelectronic components are formed, each with one of the light-emitting diode chips and a lateral opening for emitting the radiation of the light-emitting diode chip deflected by the reflector.
  • the reflector forming a dome is preferably cut through in the middle between the light-emitting diode chips, for example at the apex of the dome.
  • the reflector and the carrier can be severed using a sawing process, for example.
  • the radiation exit surface of the optoelectronic component is a saw surface.
  • a filler material is temporarily inserted in the space between the two light-emitting diode chips, the carrier and the reflector being severed in the area of the filler material and the filler material subsequently removed again.
  • This procedure has the advantage that the sawing surface is removed when the filler material is removed. the In this case, the radiation exit surface is advantageously not a saw surface and therefore has no saw marks.
  • Figures 1A to 1F a schematic representation of a
  • FIG. IG shows a schematic illustration of a cross section through an optoelectronic component according to a first example
  • Figures 2A to 2E a schematic representation of a
  • FIG. 2F shows a schematic illustration of a cross section through an optoelectronic component according to a second example
  • FIG. 3A shows a schematic illustration of an example for the production of an optoelectronic component on the basis of an intermediate step
  • FIG. 3B shows a schematic illustration of a cross section through an optoelectronic component in accordance with a third example
  • Figures 4A to 4E a schematic representation of a
  • FIG. 4F shows a schematic illustration of a cross section through an optoelectronic component according to a fourth example
  • FIG. 5A shows a schematic illustration of an example for the production of an optoelectronic component on the basis of an intermediate step
  • FIG. 5B shows a schematic illustration of a cross section through an optoelectronic component in accordance with a fifth example
  • Figure 6 is a plan view of the arrangement of
  • FIG. 7 shows a plan view of the arrangement of the light-emitting diode chips on a carrier in a further example of the method
  • Figures 8A to 8D a schematic representation of a
  • FIG. 8E shows a schematic illustration of a cross section through an optoelectronic component according to a sixth example
  • FIG. 9A shows a schematic illustration of an example for producing an optoelectronic component using an intermediate step
  • FIG. 9B shows a schematic illustration of a cross section through an optoelectronic component in accordance with a seventh example.
  • FIGS. 1A to IG show a first example of the method for producing an optoelectronic component.
  • two optoelectronic components are produced simultaneously on two areas of a carrier 1 arranged next to one another.
  • the method can also be used for the simultaneous production of a large number of optoelectronic components on a common carrier.
  • the method provides a carrier 1 on which at least one light-emitting diode chip 2 and preferably at least one further electronic component 3 can be arranged.
  • the carrier 1 is, for example, a leadframe 1A, which can be shaped with a plastic 1B in some areas. Such a carrier is also called "premolded leadframe".
  • the lead frame 1A is electrically conductive and can comprise a metal such as copper.
  • two further electronic components 3 for example two IC chips serving as drivers for the light-emitting diode chips, have been arranged on the carrier surface IC.
  • the further electronic components 3 can have electrical contacts that are connected to the leadframe 1A directly or, for example, via a bonding wire.
  • the further electronic components 3 have been encased with a molding compound which forms a lateral reflector part 4A in the optoelectronic component.
  • the molding compound is, for example, a silicone or an epoxy resin and advantageously has reflective particles such as Ti0 2 or Zr02.
  • two light-emitting diode chips 2 have been applied to the carrier 1.
  • the light-emitting diode chips 2 are soldered or glued to the carrier 1, for example.
  • the light-emitting diode chips 2 have a main emission direction which is perpendicular to the carrier surface.
  • the light-emitting diode chips 2 can have electrical contacts that are connected to the leadframe 1A directly or, for example, via a bonding wire.
  • a radiation-permeable casing 5 has been applied to the light-emitting diode chips 2.
  • the radiation-permeable envelope 5 is, for example, a clear potting compound that is applied by casting.
  • the radiation-permeable casing 5 can have a
  • the radiation-permeable envelope has light-scattering particles in order, for example, to influence the angular distribution or the color via angular distribution (CoA, Color over Angle).
  • a molding compound has been applied over the light-emitting diode chips 2.
  • the molding compound is applied in particular to the lateral reflector part 4A and the radiation-permeable casing 5 and forms an upper reflector part 4B.
  • the molding compound is, for example, a silicone or an epoxy resin and advantageously has reflective particles such as T1O2 or ZrC> 2.
  • the lateral reflector part 4A and the upper reflector part 4B together form a reflector 4 which is arranged laterally and above the light-emitting diode chips 2.
  • the carrier 1, the radiation-permeable casing 5 and the upper reflector part 4B are severed in the middle between the light-emitting diode chips 2.
  • the severing is preferably carried out by sawing.
  • the dashed line in the FIG. 1F shows the saw track 6.
  • the optoelectronic component 10 has a radiation exit surface 7 which is formed by a side surface of the radiation-permeable casing 5.
  • the optoelectronic component 10 emits the radiation from the light-emitting diode chip 2 in a preferred direction 11, which runs laterally, in particular parallel, to the carrier surface IC.
  • the light-emitting diode chip 2 can in particular have a rectangular or square cross section with four side surfaces, three of the side surfaces facing the lower reflector part 4A and the fourth side surface facing the radiation exit surface 7.
  • the further electronic component 3 in particular a driver for the light-emitting diode chip 2, is advantageously enveloped by the molding compound that forms the lower reflector part 4A, so that the further electronic component 3 is not visible from the outside.
  • FIGS. 2A to 2E show a second example of a method for producing the optoelectronic component based on intermediate steps.
  • two light-emitting diode chips 2 have been applied to a carrier 1, for example to a leadframe 1A formed with a plastic 1B.
  • the light emitting diode chips 2 are for example each electrically contacted with bonding wires.
  • a radiation-permeable casing 5 is subsequently applied to the light-emitting diode chips 2.
  • the radiation-permeable casing 5 is applied to the light-emitting diode chips 2, for example, by transfer molding.
  • the radiation-permeable casing 5 is applied to the light-emitting diode chips 2 by dispensing.
  • the carrier 1 has trenches ID which function as stop trenches when the radiation-permeable casing 5 is applied.
  • FIG. 2D again shows a carrier 1 without the trenches ID of FIG. 2C.
  • the step described here and the subsequent steps can also take place in an analogous manner in the case of a carrier with the trenches ID and are therefore not described separately.
  • a molding compound has been applied to the radiation-permeable casing 5 and the further electronic components 3.
  • the molding compound forms a reflector 4 which is arranged to the side of the light-emitting diode chips 2 and above the light-emitting diode chips 2.
  • the molding compound is, for example, a silicone or an epoxy resin and advantageously has reflective particles such as T1O2 or ZrC> 2.
  • the molding compound is preferably applied by compression molding. When applied by compression molding, the molding compound can advantageously have a comparatively high concentration of reflective particles compared to transfer molding, since there are generally no further fillers to adjust the thermal
  • Expansion coefficients must be added. A higher concentration of reflective particles enables a higher reflectivity with the same material thickness.
  • the carrier 1, the radiation-permeable casing 5 and the reflector 4 are severed along the sawing track 6 shown in FIG. 2E. In this way, two optoelectronic components are produced, each of which contains a light-emitting diode chip 2 and a further electronic component 3.
  • FIG. 2F An optoelectronic component 10 produced using the method according to FIGS. 2A to 2E is shown in FIG. 2F.
  • the optoelectronic component 10 has a laterally arranged radiation exit surface 7 which is formed by a side surface of the radiation-permeable casing 5.
  • the optoelectronic component 10 emits radiation from the light-emitting diode chip 2 in a preferred direction 11, which runs laterally, in particular parallel to the carrier surface IC.
  • FIG. 3A shows an intermediate step in a modification of the method according to FIGS. 2A to 2E.
  • the further electronic components 3 are applied to the carrier 1 before the radiation-permeable casing 5 is applied.
  • the radiation-permeable casing 5 is placed both on the light-emitting diode chips 2 and on the others electronic components 3 applied.
  • the radiation-permeable casing 5 is preferably applied by compression molding.
  • a molding compound is applied to the radiation-transmissive envelope to form a reflector, and then the carrier 1, the radiation-transmissive envelope 5 and the reflector are severed to produce two optoelectronic components.
  • FIG. 3B An optoelectronic component 10 produced in this way is shown in FIG. 3B.
  • the optoelectronic component 10 has a laterally arranged radiation exit surface 7 which is formed by a side surface of the radiation-permeable casing 5.
  • the optoelectronic component 10 emits radiation from the light-emitting diode chip 2 in a preferred direction 11, which runs laterally, in particular parallel to the carrier surface IC.
  • FIGS. 4A to 4E a fourth example of a method for producing the optoelectronic component is shown on the basis of intermediate steps.
  • a carrier 1 is used in this example, which is, for example, a lead frame 1A molded with a plastic 1B.
  • the carrier 1 has separating webs IE which are arranged on the carrier surface IC.
  • the separators IE are arranged in the finished optoelectronic component between the light-emitting diode chips and the further electronic components.
  • the separating webs IE are advantageously formed from a molding compound which has the same material as the reflector produced later.
  • the separating webs IE can have an epoxy resin or a silicone with reflective particles such as T1O2 or S1O2, for example.
  • two light-emitting diode chips 2 have been applied to the carrier 1.
  • the light-emitting diode chips 2 are each electrically contacted with bonding wires, for example.
  • further electronic components 3 for example a driver for each of the light-emitting diode chips 2, have been applied to the carrier 1.
  • a radiation-permeable casing 5 is subsequently applied to the light-emitting diode chips 2 and the further electronic components 3.
  • the radiation-permeable casing 5 is produced, for example, by compression molding.
  • recesses 8 are produced in the radiation-permeable casing 5 over the separating webs IE, said recesses extending as far as the top of the separating webs IE.
  • the recesses 8 can be produced, for example, by sawing.
  • a molding compound has been applied to the radiation-permeable casing 5.
  • the molding compound fills the recesses 8 over the partitions IE.
  • the molding compound together with the molding compound that forms the separating webs, forms a reflector 4 which is arranged to the side of the light-emitting diode chips 2 and above the light-emitting diode chips 2.
  • the molding compound is, for example, a silicone or an epoxy resin and advantageously has reflective particles such as T1O2 or ZrC> 2.
  • the molding compound is preferably applied by compression molding.
  • the carrier 1, the radiation-permeable casing 5 and the reflector 4 are then severed along the sawing track 6 shown in FIG. 4E. In this way, two optoelectronic components are produced, each of which contains a light-emitting diode chip 2 and a further electronic component 3.
  • FIG. 4F An optoelectronic component 10 produced using the method according to FIGS. 4A to 4E is shown in FIG. 4F.
  • the optoelectronic component 10 has a laterally arranged radiation exit surface 7 which is formed by a side surface of the radiation-permeable casing 5.
  • the optoelectronic component 10 emits radiation from the light-emitting diode chip 2 in a preferred direction 11, which runs laterally, in particular parallel to the carrier surface IC.
  • the optoelectronic component 10 has a reflector 4, a lower reflector part 4A being formed by the separating webs IE and an upper reflector part 4B being formed by the molding compound applied to the radiation-permeable envelope 5.
  • FIG. 5A shows an intermediate step in a modification of the method according to FIGS. 4A to 4E.
  • a carrier 1 without separating webs is used, as in the examples of FIGS. 1 to 3.
  • recesses are produced in the radiation-permeable casing 5 analogously to FIG.
  • the recesses are preferably produced by sawing and can end at the carrier surface IC or extend into the carrier 1 by up to about 50 ⁇ m.
  • the molding compound is, for example, a silicone or an epoxy resin and advantageously has reflective particles such as T1O2 or ZrC> 2.
  • the molding compound is preferably applied by compression molding.
  • the carrier 1, the radiation-permeable casing 5 and the reflector 4 are then severed along the sawing track 6 shown in FIG. 5A. In this way, two optoelectronic components are produced, each of which contains a light-emitting diode chip 2 and a further electronic component 3.
  • the optoelectronic component 10 has a laterally arranged radiation exit surface 7 which is formed by a side surface of the radiation-permeable casing 5.
  • the optoelectronic component 10 emits radiation from the light-emitting diode chip 2 in a preferred direction 11, which runs laterally, in particular parallel to the carrier surface IC.
  • the optoelectronic component 10 has a reflector 4, a lower reflector part 4A being formed by the molding compound in the recesses and an upper reflector part 4B being formed by the molding compound applied to the radiation-permeable envelope 5.
  • FIG. 6 shows a plan view of the arrangement of the light-emitting diode chips 2 on a carrier 1 in an example of the method in which a plurality of optoelectronic components are produced on the carrier 1 at the same time.
  • optoelectronic components are produced which each have a light-emitting diode chip 2 and no further electronic components.
  • the saw marks 6B are shown, with which the recesses for the lower reflector parts 4B are produced analogously to the description of FIG. 5A. These saw marks 6 are preferably about 300 ⁇ m to 500 ⁇ m wide and penetrate 0 ⁇ m to 50 ⁇ m into the carrier 1.
  • the saw tracks 6 are shown with which the carrier 1 is separated into individual optoelectronic components. Said saw tracks 6 are preferably 100 ⁇ m to 200 ⁇ m wide and cut through the carrier 1.
  • the optoelectronic components produced in this way each emit radiation in a preferred direction 11 indicated by the arrows.
  • FIG. 7 shows a plan view of the arrangement of the light-emitting diode chips 2 on a carrier 1 in a further example of the method in which a plurality of optoelectronic components are produced on the carrier 1 at the same time.
  • optoelectronic components are produced which each have a light-emitting diode chip 2 and, in addition, a further electronic component 3, in particular a driver for the light-emitting diode chips 2.
  • the saw marks 6B are shown, with which the recesses for the lower reflector parts 4B are produced analogously to the description of FIG. 5A.
  • saw marks 6 are preferably approximately 300 ⁇ m to 500 ⁇ m wide and penetrate 0 ⁇ m to 50 ⁇ m into the carrier 1.
  • the saw tracks 6 are shown with which the carrier 1 is separated into individual optoelectronic components. Said saw tracks 6 are preferably 100 ⁇ m to 200 ⁇ m wide and cut through the carrier 1.
  • the optoelectronic components 2 produced in this way each emit radiation in a preferred direction 11 indicated by the arrows.
  • FIGS. 8A to 8D show a further example of a method for producing the optoelectronic component on the basis of intermediate steps.
  • a carrier 1 is used in this example, which is a lead frame 1A molded with a plastic 1B.
  • two light-emitting diode chips 2 have been applied to the carrier 1.
  • the light-emitting diode chips 2 are each electrically contacted with bonding wires, for example.
  • further electronic components 3 for example a driver for each of the light-emitting diode chips 2, have been applied to the carrier 1.
  • the carrier 1 has a recess which is arranged between two adjacent light-emitting diode chips 2.
  • the further electronic component 3 has been encased with a molding compound which forms a lower reflector part 4A in the optoelectronic component.
  • the molding compound is, for example, a silicone or an epoxy resin and advantageously has reflective particles such as T1O2 or ZrC> 2.
  • a radiation-permeable casing 5 is subsequently applied to the light-emitting diode chips 2 and to the lower reflector part 4A over the further electronic components 3.
  • the radiation-permeable casing 5 is produced, for example, by compression molding.
  • the radiation-permeable casing 5 has a depression in the region of the depression in the carrier 1.
  • the depression is made in the radiation-permeable envelope 5 filled with a filler material 9.
  • the filler material 9 is preferably a material that is water-soluble, for example polyvinyl alcohol. This has the advantage that the filling material can be removed again in a simple manner after the later step of severing.
  • a molding compound has been applied to the radiation-permeable casing 5.
  • the molding compound forms an upper reflector part 4B which is arranged above the light-emitting diode chips 2.
  • the molding compound is, for example, a silicone or an epoxy resin and advantageously has reflective particles such as T1O2 or ZrC> 2.
  • the molding compound is preferably applied by compression molding.
  • the carrier 1, the radiation-permeable casing 5, the filling material 9 and the reflector 4 are then severed along the sawing track 6 shown in FIG. 8D.
  • the filler material 9 is then preferably removed again. In this way, two optoelectronic components are produced, each of which contains a light-emitting diode chip 2 and a further electronic component 3.
  • FIG. 8E An optoelectronic component 10 produced in this way is shown in FIG. 8E.
  • the optoelectronic component 10 has a laterally arranged radiation exit surface 7 which is formed by a side surface of the radiation-permeable casing 5.
  • the optoelectronic component 10 emits radiation from the light-emitting diode chip 2 in a preferred direction 11, which runs laterally, in particular parallel to the carrier surface IC.
  • FIG. 9A shows an intermediate step in a modification of the method according to FIGS. 8A to 8D. In this modification, the radiation-permeable casing 5 has been applied to the carrier 1 and the light-emitting diode chips 2 by means of film assisted molding (FAM).
  • FAM film assisted molding
  • the radiation-permeable casing 5 does not cover the molding compound which forms the lower reflector part 4B.
  • the molding compound that forms the upper reflector part 4B is applied to the radiation-permeable envelope and directly to the lower reflector part 4B.
  • the carrier 1, the radiation-permeable casing 5, the filling compound 9 and the reflector 4 are then severed in order to produce two optoelectronic components.
  • FIG. 9B An optoelectronic component 10 produced in this way is shown in FIG. 9B.
  • the optoelectronic component 10 has a laterally arranged radiation exit surface 7 which is formed by a side surface of the radiation-permeable casing 5.
  • the optoelectronic component 10 emits radiation from the light-emitting diode chip 2 in a preferred direction 11, which runs laterally, in particular parallel to the carrier surface IC.

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Abstract

La présente invention concerne un composant optoélectronique (10) comprenant un support (1) ayant une surface de support (1C) et une puce de diode électroluminescente (2) disposée sur la surface de support (IC) et ayant une direction d'émission principale perpendiculaire à la surface de support (IC). Un réflecteur (4) est disposé au-dessus de la puce de diode électroluminescente (2) et latéralement par rapport à la puce de diode électroluminescente, ledit réflecteur étant approprié pour dévier le rayonnement émis par la puce de diode électroluminescente (2) dans une direction préférentielle (11) s'étendant latéralement par rapport à la surface de support (IC). La présente invention concerne en outre un procédé adapté à la fabrication du composant optoélectronique (10).
PCT/EP2021/060513 2020-05-07 2021-04-22 Composant optoélectronique et son procédé de fabrication WO2021224015A1 (fr)

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DE102020112389.2A DE102020112389A1 (de) 2020-05-07 2020-05-07 Optoelektronisches bauelment und verfahren zu dessen herstellung
DE102020112389.2 2020-05-07

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WO2023241871A1 (fr) * 2022-06-13 2023-12-21 Ams-Osram International Gmbh Procédé de fabrication d'une pluralité d'éléments optoélectroniques et élément optoélectronique

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DE102020120502A1 (de) 2020-08-04 2022-02-10 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Strahlungsemittierendes bauelement, verfahren zur herstellung eines strahlungsemittierenden bauelements und modul mit einem strahlungsemittierenden bauelement

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DE102019104325A1 (de) 2019-02-20 2020-08-20 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronisches Halbleiterbauteil und Herstellungsverfahren für optoelektronische Halbleiterbauteile

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* Cited by examiner, † Cited by third party
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WO2023241871A1 (fr) * 2022-06-13 2023-12-21 Ams-Osram International Gmbh Procédé de fabrication d'une pluralité d'éléments optoélectroniques et élément optoélectronique

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