WO2021186907A1

WO2021186907A1 - Solid-state imaging device, method for manufacturing same, and electronic instrument

Info

Publication number: WO2021186907A1
Application number: PCT/JP2021/002886
Authority: WO
Inventors: 祥哲東宮; 山本　篤志
Original assignee: ソニーセミコンダクタソリューションズ株式会社
Priority date: 2020-03-16
Filing date: 2021-01-27
Publication date: 2021-09-23
Also published as: JP2021150325A

Abstract

The present invention suppresses image degradation. A solid-state imaging device has a plurality of photoelectric conversion units provided in a semiconductor layer, a color filter layer that is positioned on the plurality of photoelectric conversion units and includes two or more colors of color filter units, and an inorganic layer that is positioned at least on the upper surface of the color filter layer and has a higher refractive index than the color filter layer.

Description

Solid-state image sensor, its manufacturing method, and electronic equipment

The present technology (technology according to the present disclosure) is applied to a solid-state imaging device and a manufacturing method thereof, and an electronic device, particularly to a solid-state imaging device having a color filter, a manufacturing method thereof, and an electronic device provided with the solid-state imaging device. It concerns effective technology.

The solid-state image sensor that converts light into an electric signal includes a semiconductor layer provided with a plurality of photoelectric conversion units and a color filter layer arranged on the light incident surface side of the semiconductor layer. The color filter layer includes, for example, a color filter unit having three colors of red (R), green (G), and blue (B).

Patent Document 1 discloses a solid-state image sensor in which the shoeing characteristics are improved by providing a separation wall having a refractive index lower than that of the color filter unit between color filter units having different colors. Further, Patent Document 1 also discloses a technique for further improving the light introduction efficiency by providing a flattening layer on the light incident surface side of the color filter layer. This flattening layer is also lower than the refractive index of the color filter portion.

Japanese Unexamined Patent Publication No. 2009-11125

By the way, the color filter layer is generally made of a resin material having high hygroscopicity. Therefore, there is a concern that deterioration of the color filter layer due to moisture absorption in a high temperature and high humidity environment may cause image deterioration such as stain defects.

The purpose of this technology is to provide a solid-state image sensor capable of suppressing image deterioration, a method for manufacturing the same, and an electronic device equipped with the device.

The solid-state image sensor according to one aspect of the present technology is
A semiconductor layer provided with a plurality of photoelectric conversion units and
A color filter layer provided on the light incident surface side of the semiconductor layer and including a color filter unit of two or more colors, and a color filter layer.
An inorganic layer arranged on the light incident surface side of the color filter layer and having a refractive index higher than that of the color filter layer,
Have.

A method for manufacturing a solid-state image sensor according to another aspect of the present technology is described.
A color filter film is formed on the semiconductor layer,
An inorganic layer having a refractive index higher than that of the color filter film is formed on the color filter film.
An etching mask is formed on the above inorganic layer to form an etching mask.
The inorganic layer and the color filter film around the etching mask are removed by etching to form a color filter portion whose upper surface is covered with the inorganic layer, and the etching mask is removed by overetching.
Including that.

Electronic devices related to other aspects of this technology
A semiconductor layer provided with a plurality of photoelectric conversion units and
A color filter layer provided on the light incident surface side of the semiconductor layer and including a color filter unit of two or more colors, and a color filter layer.
An inorganic layer arranged on the light incident surface side of the color filter layer and having a refractive index higher than that of the color filter layer,
It is equipped with a solid-state image sensor.

It is a chip layout diagram which shows one configuration example of the solid-state image pickup apparatus which concerns on 1st Embodiment of this technique. It is a block diagram which shows one configuration example of the solid-state image pickup apparatus which concerns on 1st Embodiment of this technique. It is a schematic cross-sectional view which shows the cross-sectional structure of a pixel array part. It is a process sectional view of the manufacturing method of the solid-state image sensor which concerns on 1st Embodiment of this technique. It is a process cross-sectional view following FIG. 4A. It is a process cross-sectional view following FIG. 4B. It is a process cross-sectional view following FIG. 4C. It is a process cross-sectional view which enlarged a part of FIG. 4D. It is a process cross-sectional view following FIG. 5A. It is a process cross-sectional view following FIG. 5B. It is a process cross-sectional view following FIG. 5C. It is a process cross-sectional view following FIG. 5D. It is a process cross-sectional view following FIG. 5E. It is a process cross-sectional view following FIG. 5F. It is a process cross-sectional view following FIG. 5G. It is a process cross-sectional view following FIG. 5H. It is a process cross-sectional view following FIG. 5I. It is a schematic cross-sectional view which shows the pixel array part of the solid-state image sensor which concerns on 2nd Embodiment of this technique. It is a schematic cross-sectional view which shows the pixel array part of the solid-state image sensor which concerns on 3rd Embodiment of this technique. It is a schematic cross-sectional view which shows the pixel array part of the solid-state image sensor which concerns on 4th Embodiment of this technique. It is a process sectional view of the manufacturing method of the solid-state image sensor which concerns on 4th Embodiment of this technique. It is a process cross-sectional view following FIG. 9A. It is a process cross-sectional view following FIG. 9B. It is a process cross-sectional view following FIG. 9C. It is a process cross-sectional view following FIG. 9D. It is a schematic cross-sectional view which shows the pixel array part of the solid-state image sensor which concerns on 5th Embodiment of this technique. It is a process sectional view of the manufacturing method of the solid-state image sensor which concerns on 5th Embodiment of this technique. It is a process cross-sectional view following FIG. 11A. It is a process cross-sectional view following FIG. 11B. It is a process cross-sectional view following FIG. 11C. It is a process cross-sectional view following FIG. 11D. It is a process cross-sectional view following FIG. 11E. It is a schematic cross-sectional view which shows the pixel array part of the solid-state image sensor which concerns on 6th Embodiment of this technique. It is a process sectional view of the manufacturing method of the solid-state image pickup apparatus which concerns on 6th Embodiment of this technique. It is a process cross-sectional view following FIG. 13A. It is a figure which shows one schematic configuration example of an electronic device. It is a figure which shows one schematic configuration example of an electronic device. It is a block diagram which shows one schematic configuration example of a vehicle control system. It is explanatory drawing which shows an example of the installation position of the vehicle exterior information detection unit and the image pickup unit. It is a block diagram which shows one schematic configuration example of an endoscopic surgery system. It is a block diagram which shows an example of the functional structure of a camera head and a CCU.

Hereinafter, embodiments of the present technology will be described with reference to the drawings. In the description of the drawings referred to in the following description, the same or similar parts are designated by the same or similar reference numerals. However, it should be noted that the drawings are schematic, and the relationship between the thickness and the plane dimensions, the ratio of the thickness of each layer, etc. are different from the actual ones. Therefore, the specific thickness and dimensions should be determined in consideration of the following explanation. In addition, it goes without saying that the drawings include parts having different dimensional relationships and ratios from each other. It should be noted that the effects described in the present specification are merely examples and are not limited, and other effects may be obtained.

(First Embodiment)
In this first embodiment, an example in which the present technology is applied to a solid-state image sensor which is a back-illuminated CMOS (Complementary Metal Oxide Semiconductor) image sensor will be described.
≪Structure of solid-state image sensor≫
First, the plane layout of the solid-state image sensor 1 will be described.
As shown in FIG. 1, the solid-state imaging device 1 according to the first embodiment of the present technology is mainly composed of a semiconductor chip 2 having a rectangular two-dimensional planar shape when viewed in a plan view. The semiconductor chip 2 has a rectangular pixel array portion 2A provided in the center in a two-dimensional planar shape, a peripheral portion 2B provided outside the pixel array portion 2A so as to surround the pixel array portion 2A, and the periphery thereof. A pad arranging portion 2C provided so as to surround the peripheral portion 2B is provided on the outside of the portion 2B.

The pixel array unit 2A is a light receiving surface that receives light collected by an optical system (not shown). Then, in the pixel array unit 2A, a plurality of pixels 3 are arranged in a matrix in a two-dimensional plane including the X direction and the Y direction.

The vertical drive circuit 4, the column signal processing circuit 5, the horizontal drive circuit 6, the output circuit 7, the control circuit 8, and the like shown in FIG. 2 are arranged in the peripheral portion 2B.

Each pixel 3 of the plurality of pixels 3 includes a photoelectric conversion unit 23 shown in FIG. 3 and a plurality of pixel transistors (not shown). As the plurality of pixel transistors, for example, four transistors such as a transfer transistor, a reset transistor, a selection transistor, and an amplifier transistor can be adopted. Further, as the plurality of pixel transistors, for example, three transistors excluding the selection transistor may be adopted.

The vertical drive circuit 4 is composed of, for example, a shift register. The vertical drive circuit 4 sequentially selects the desired pixel drive wiring 10, supplies a pulse for driving the pixel 3 to the selected pixel drive wiring 10, and drives each pixel 3 in rows. That is, the vertical drive circuit 4 selectively scans each pixel 3 of the pixel array unit 2A in a row-by-row manner in the vertical direction, and the pixel 3 based on the signal charge generated by the photoelectric conversion unit 23 of each pixel 3 according to the amount of received light. Is supplied to the column signal processing circuit 5 through the vertical signal line 11.

The column signal processing circuit 5 is arranged for each column of the pixel 3, for example, and performs signal processing such as noise removal for each pixel string for the signal output from the pixel 3 for one row. For example, the column signal processing circuit 5 performs signal processing such as CDS (Correlated Double Sampling) and AD (Analog Digital) conversion for removing fixed pattern noise peculiar to pixels.

The horizontal drive circuit 6 is composed of, for example, a shift register. The horizontal drive circuit 6 sequentially outputs horizontal scanning pulses to the column signal processing circuit 5, thereby sequentially selecting each of the column signal processing circuits 5, and the pixels in which the signal processing is performed from each of the column signal processing circuits 5. The signal is output to the horizontal signal line 12.

The output circuit 7 performs signal processing on pixel signals sequentially supplied from each of the column signal processing circuits 5 through the horizontal signal line 12 and outputs the signals. As the signal processing, for example, buffering, black level adjustment, column variation correction, various digital signal processing and the like can be used.

Based on the vertical synchronization signal, the horizontal synchronization signal, and the master clock signal, the control circuit 8 transmits a clock signal or a control signal that serves as a reference for the operation of the vertical drive circuit 4, the column signal processing circuit 5, the horizontal drive circuit 6, and the like. Generate. Then, the control circuit 8 outputs the generated clock signal and control signal to the vertical drive circuit 4, the column signal processing circuit 5, the horizontal drive circuit 6, and the like.

As shown in FIG. 1, a plurality of electrode pads 13 are arranged along the respective sides of the four sides in the two-dimensional plane of the semiconductor chip 2 in the pad arrangement portion 2C. The electrode pad 13 is an input / output terminal used when the semiconductor chip 2 is electrically connected to an external device (not shown).

As shown in FIG. 14, the solid-state image sensor 1 (101) according to the first embodiment takes in the image light (incident light 106) from the subject through the optical lens 102 and forms an image on the image pickup surface. The amount of light of the incident light 106 is converted into an electric signal in pixel units and output as a pixel signal.

Next, the specific structure of the solid-state image sensor 1 will be described.
As shown in FIG. 3, the semiconductor chip 2 has a semiconductor layer 20 provided with a plurality of photoelectric conversion units 23, and first surfaces S1 and second surfaces S1 and second located opposite to each other in the thickness direction of the semiconductor layer 20. It has a color filter layer 40 which is arranged on the light incident surface side which is the second surface S2 side of the surface S2 and includes a color filter unit of two or more colors.
Further, the semiconductor chip 2 has an inorganic layer 50 arranged on the light incident surface side of the color filter layer 40 and having a refractive index higher than that of the color filter layer 40.
Further, the semiconductor chip 2 further has a plurality of microlenses 59 (on-chip lens, wafer lens) arranged on the light incident surface side (the side opposite to the semiconductor layer 20 side) of the color filter layer 40.
Further, the semiconductor chip 2 includes a multilayer wiring layer 30 arranged on the first surface S1 side of the semiconductor layer 20 and a support substrate 34 arranged on the side opposite to the semiconductor layer 20 side of the multilayer wiring layer 30. Have more.

The semiconductor layer 20 is composed of, for example, a p-type semiconductor substrate made of single crystal silicon. Each photoelectric conversion unit 23 of the plurality of photoelectric conversion units 23 is arranged in a matrix in the pixel array unit 2A corresponding to each pixel 3 of the plurality of pixels 3. Each photoelectric conversion unit 23 is partitioned by a separation region 22 provided in the semiconductor layer 20. The separation region 22 extends from the first surface S1 side of the semiconductor layer 20 toward the second surface S2 side, and electrically and optically separates the photoelectric conversion units 23 adjacent to each other. For the separation region 22, for example, a single-layer structure made of a silicon oxide film or a three-layer structure in which both sides of the metal film are sandwiched between insulating films can be used. In the photoelectric conversion unit 23, a signal charge corresponding to the amount of incident light is generated, and the generated signal charge is accumulated.

Each photoelectric conversion unit 23 of the plurality of photoelectric conversion units 23 is configured with a well region 21 composed of, for example, an n-type semiconductor region. Further, although not shown in detail, each photoelectric conversion unit 23 of the plurality of photoelectric conversion units 23 includes, for example, an avalanche photodiode (APD) element as a photoelectric conversion element, and further comprises a pixel transistor. Has been done. That is, in the pixel array unit 2A, a plurality of pixels 3 including the photoelectric conversion unit 23 embedded in the semiconductor layer 20 are arranged in a matrix (two-dimensional matrix).

The multilayer wiring layer 30 is arranged on the first surface S1 side opposite to the light incident surface (second surface S2) side of the semiconductor layer 20, via the interlayer insulating film 31 and the interlayer insulating film 31. It is configured to include the wiring 32 laminated in a plurality of layers. Pixel transistors constituting each pixel 3 are driven via the plurality of layers of wiring 32. Since the multilayer wiring layer 30 is arranged on the side opposite to the light incident surface side (second surface S2 side) of the semiconductor layer 20, the layout of the wiring 32 can be freely set.

The color filter layer 40 including the color filter units of two or more colors is not limited to this, and for example, the first color filter unit 41 of red (R), the second color filter unit 42 of green (G), and blue. Includes the third color filter unit 43 of (B). The first to third color filter units 41 to 43 are arranged in a matrix corresponding to each pixel 3 of the plurality of pixels 3, that is, each photoelectric conversion unit 23 of the plurality of photoelectric conversion units 23 in the pixel array unit 2A. It is arranged in a shape. The first to third color filter units 41 to 43 are randomly arranged and are not necessarily the same number. In this first embodiment, for example, the green (G) second color filter unit 42 is provided more than the red (R) first color filter unit 41 and the blue (B) third color filter unit 43. There is. Each of the red (R) first color filter unit 41, the green (G) second color filter unit 42, and the blue (B) third color filter unit 43 is the incident light that the photoelectric conversion unit 23 wants to receive. It is configured to transmit the specific wavelength of the above and incident light that has been transmitted to the photoelectric conversion unit 23.

The inorganic layer 50 is composed of a monolayer film made of a light transmitting film 51, but not limited to this. Then, the inorganic layer 50 selectively selects the color filter unit of a predetermined color among the first to third color filter units 41 to 43, for example, the light incident surface side of the second color filter unit 42 of green (G). Covering. That is, the inorganic layer 50 is not provided on the light incident surface side of each of the first and third

color filter portions

41 and 43. _{The light transmitting film 51 includes, for example, an aluminum oxide (Al 2} O ₃ ) film, a hafonium oxide (HfO ₂ ) film, and silicon nitride, which have a higher refractive index than the refractive index of the color filter layer 40 including the first to third color filter units 41 to 43. It is composed of any of the (Si ₃ N _{4) films.} Further, the light transmitting film 51 may be configured by laminating any two or more of an aluminum oxide film, a hafnium oxide film, and a silicon nitride film. The light transmitting film 51 also functions as an etching stopper when the green (G) color filter film is etched to form the second color filter portion 42 in the manufacturing process of the solid-state imaging device.
The aluminum oxide film has a refractive index of, for example, about 1.63. The hafnium oxide film has a refractive index of, for example, about 1.95. The silicon nitride film has a refractive index of, for example, about 2.0. The silicon oxide film has a refractive index of, for example, about 1.45. Each of the red first color filter unit 41, the green second color filter unit 42, and the blue third color filter unit 43 has a refractive index of, for example, about 1.6.

Each microlens 59 of the plurality of microlenses 59 is arranged in a matrix corresponding to each pixel 3 of the plurality of pixels 3, that is, each photoelectric conversion unit 23 of the plurality of photoelectric conversion units 23 in the pixel array unit 2A. It is arranged. The microlens 59 collects the irradiation light, and the collected light is efficiently incident on the photoelectric conversion unit 23 of the semiconductor layer 20 via the color filter layer 40. The plurality of microlenses 59 form a microlens array on the light incident surface side of the color filter layer. The microlens 59 is made of a material such as styrene.

The support substrate 34 is provided on the surface of the multilayer wiring layer 30 opposite to the side facing the semiconductor layer 20. The support substrate 34 is a substrate for ensuring the strength of the semiconductor layer 20 in the manufacturing stage of the solid-state image sensor 1. As the material of the support substrate 34, for example, silicon (Si) can be used.

A flattening film 36, a light-shielding film 37, and an adhesive film 38 are laminated in this order between the semiconductor layer 20 and the color filter layer 40 from the semiconductor layer 20 side.
The flattening film 36 covers the entire light incident surface side of the semiconductor layer 20 in the pixel array portion 2A so that the light incident surface side of the semiconductor layer 20 becomes a flat surface without unevenness. As the flattening film 36, for example, a silicon oxide (SiO ₂ ) film can be used.
The light-shielding film 37 has a grid-like plane pattern in which the plane pattern in a plan view opens each of the light-receiving surface sides of the plurality of photoelectric conversion units 23 so that the light of the predetermined pixel 3 does not leak to the adjacent pixel 3. ing. As the light-shielding film 37, for example, a tungsten (W) film is used.

The adhesive film 38 is arranged between the flattening film 36 and the light-shielding film 37 and the color filter layer 40, and mainly enhances the adhesion between the light-shielding film 37 and the color filter layer 40. As the adhesive film 38, for example, a silicon oxide film is used.

In the solid-state image sensor 1 having the above configuration, light is emitted from the microlens 59 side of the semiconductor chip 2, and the irradiated light is individually transmitted through the microlens 59 and the

color filter units

41, 42, 43 and transmitted. A signal charge is generated by photoelectric conversion of light by the photoelectric conversion unit 23. Then, the generated signal charge is output as a pixel signal by the vertical signal line 11 composed of the wiring 32 of the multilayer wiring layer 30 via the pixel transistor formed on the first surface side of the semiconductor layer 20. Further, the distance to the subject is calculated based on the difference between the signal charges generated by the photoelectric conversion unit 23.

As described above, the solid-state imaging device 1 according to the first embodiment is an inorganic layer composed of a light transmitting film 51 arranged on the light incident surface side of the color filter layer 40 and having a refractive index higher than that of the color filter layer 40. Has 50. The inorganic layer 50 selectively covers the light incident surface side of the green (G) second color filter unit 42 of the three

color filter units

41, 42, and 43. The inorganic layer 50 having a higher refractive index than the color filter layer 40 has a finer film quality than the color filter layer 40, and therefore has a lower moisture permeability than the color filter layer 40. Therefore, according to the solid-state image sensor 1 according to the first embodiment, moisture absorption in the second color filter unit 42 covered with the inorganic layer 50 can be suppressed, so that the entire color filter layer 40 is altered by moisture absorption. Can be suppressed. This makes it possible to suppress image deterioration such as stain defects caused by deterioration of the color filter layer 40 due to moisture absorption.

≪Manufacturing method of solid-state image sensor≫
Next, the method of manufacturing the solid-state image sensor 1 according to the first embodiment will be described with reference to FIGS. 4A to 4C and FIGS. 5A to 5J.

First, the semiconductor layer 20 shown in FIG. 4A is prepared. As the semiconductor layer 20, for example, a single crystal silicon substrate is used.
Next, as shown in FIG. 4A, a well region 21 composed of an n-type semiconductor region is formed on the first surface S1 side of the semiconductor layer 20.
Next, as shown in FIG. 4B, a plurality of photoelectric conversion units 23 are formed on the first surface S1 side of the semiconductor layer 20, each of which is surrounded by a separation region 22 and partitioned. Each of the plurality of photoelectric conversion units 23 is formed by forming a separation region 22, an APD element, a pixel transistor, or the like on the first surface S1 side of the semiconductor layer 20.

Next, as shown in FIG. 4C, a multilayer wiring layer including an interlayer insulating film 31 and wiring 32 laminated in a plurality of layers via the interlayer insulating film 31 on the first surface S1 side of the semiconductor layer 20. Form 30.
Next, the support substrate 34 is joined to the side of the multilayer wiring layer 30 opposite to the semiconductor layer 20 side. Then, as shown in FIGS. 4D and 5A, the second surface (light incident surface) S2 side of the semiconductor layer 20 is ground by the CMP method or the like until the separation region 22 is exposed to reduce the thickness of the semiconductor layer 20. do.

Next, as shown in FIG. 5B, the flattening film 36, the light-shielding film 37, and the adhesive film 38 are formed in this order on the second surface S2 side of the semiconductor layer 20. The flattening film 36 is formed by forming, for example, a silicon oxide film on the second surface S2 of the semiconductor layer 20 by a CVD method, and then grinding the surface of the silicon oxide film by a CMP method or an etchback method. NS. The light-shielding film 37 is formed by forming a tungsten (W) film on the flattening film 36, for example, as a refractory metal film by a sputtering method, and then turning the tungsten film into a predetermined pattern using a well-known photolithography technique. Formed by The light-shielding film 37 is formed by a grid-like plane pattern in which the plane pattern in a plan view opens each of the light-receiving surface sides of the plurality of photoelectric conversion units 23. The adhesive film 38 is formed by forming, for example, a silicon oxide film on the entire surface of the flattening film 36 including the light-shielding film 37 by a CVD method. The adhesive film 38 is formed with a film thickness thinner than the thickness of the light-shielding film 37 so that a recess is formed in the region surrounded by the light-shielding film 37.

Next, as shown in FIG. 5C, a green (G) color filter film 42A having a green (G) spectral characteristic is applied to the entire surface of the adhesive film 38 on the second surface 2S side of the semiconductor layer 20. Form. In the green color filter film 42A, a liquid thermosetting resin material is applied to the second surface 2S side of the semiconductor layer 20 by a spin cord method, and then heat treatment is performed to heat the liquid thermosetting resin material. It is formed by curing.

Next, as shown in FIG. 5D, a single-layer inorganic layer 50 made of a light transmitting film 51 having a refractive index higher than that of the green color filter film 42A is formed on the entire surface of the green color filter film 42A. As the light transmitting film 51, any one of an aluminum oxide film, a hafnium oxide film, and a silicon nitride film having a refractive index higher than that of the green color filter film 42A can be used. Further, the light transmitting film 51 may be configured by laminating any two or more of an aluminum oxide film, a hafnium oxide film, and a silicon nitride film.

Next, as shown in FIG. 5E, an etching mask RM1 used as a mask for etching the inorganic layer 50 and the green second color filter film 42A is formed on the inorganic layer 50. The etching mask RM1 is formed by forming a photosensitive resist film on the entire surface of the inorganic layer 50, and then subjecting the photosensitive resist film to a photosensitive treatment, a developing treatment, or the like to process the photosensitive resist film into a predetermined pattern. The etching mask RM1 is formed at a position in which the etching mask RM1 is planarly overlapped with the photoelectric conversion unit 23 that receives light of a green wavelength and performs photoelectric conversion among the plurality of photoelectric conversion units 23.

Next, the etching mask RM1 is used as an etching mask, and the inorganic layer 50 and the green color filter film 42A around the etching mask RM1 are sequentially removed by etching, and as shown in FIG. 5F, the upper surface is the inorganic layer 50. A covered green (G) second color filter portion 42 is formed, and as shown in FIG. 5G, overetching is performed to remove the etching mask RM1 on the green second color filter portion 42. Etching is performed by dry etching such as RIE (Reactive Ion Etching) having excellent anisotropy. The second color filter unit 42 is formed so as to be planarly overlapped on the photoelectric conversion unit 23 that receives and converts light having a green wavelength among the plurality of photoelectric conversion units 23.
In this step, since the inorganic layer 50 functions as an etching stopper, the etching mask RM1 made of the same resin-based material as the green color filter film 42A can be easily removed. Further, since the green color filter film 42A is etched by dry etching using the etching mask RM1, the green second color filter portion 42 having excellent rectangularity can be formed with high accuracy.

Next, as shown in FIG. 5H, among the plurality of photoelectric conversion units 23, the photoelectric conversion unit 23 that receives and converts light having a red wavelength is placed so as to be planarly overlapped with the photoelectric conversion unit 23. The red (R) first color filter portion 41 is formed. The first color filter section 41 is formed in the same process as the step of forming the green second color filter section 42 excluding the step of forming the inorganic layer 50. That is, the red first color filter unit 41 forms a red color filter film having red (R) spectral characteristics, forms an etching mask on the red color filter film, and surrounds the etching mask. It is formed by removing the red color filter film by etching.

Next, as shown in FIG. 5I, among the plurality of photoelectric conversion units 23, the photoelectric conversion unit 23 that receives and converts light having a blue wavelength is placed so as to be planarly overlapped with the photoelectric conversion unit 23. The blue (B) third color filter portion 43 is formed. The third color filter section 43 is also formed in the same process as the step of forming the green second color filter section 42 excluding the step of forming the inorganic layer 50. That is, the blue (B) third color filter unit 43 forms a blue color filter film having blue spectral characteristics, forms an etching mask on the blue color filter film, and forms a blue color around the etching mask. It is formed by removing the color filter film of the above by etching. By this step, the color filter layer 40 having the first to third color filter portions 41 to 43 is formed.

Next, as shown in FIG. 5J, a plurality of microlenses 59 are formed on the light incident surface side of the color filter layer 40. As a result, a semiconductor substrate including a semiconductor layer 20, a multilayer wiring layer 30, a flattening film 36, a light-shielding film 37, an adhesive film 38, a microlens, and the like is formed. Further, the solid-state image sensor 1 shown in FIGS. 1 to 3 is almost completed. The solid-state image sensor 1 is formed in each of a plurality of chip forming regions defined by a scribe line (dicing line) on the semiconductor substrate. Then, the semiconductor chip 2 on which the solid-state image sensor 1 is mounted is formed by individually dividing the plurality of chip forming regions along the scribe line.

In the method for manufacturing the solid-state imaging device 1 according to the first embodiment, the inorganic layer 50 around the etching mask RM1 and the green (G) color filter film 42A are sequentially removed by etching, and the upper surface is covered with the inorganic layer 50. When the green (G) second color filter portion 42 is formed, the inorganic layer 50 functions as an etching stopper, so that the etching mask RM1 made of the same resin material as the second color filter film 42A can be easily removed. can do. Further, since the green (G) color filter film 42A is etched by dry etching using the etching mask RM1, the green (G) second color filter portion 42 having excellent rectangularity can be formed with high accuracy. .. Therefore, according to the manufacturing method of the solid-state image sensor 1 according to the first embodiment, the color filter layer 40 with high accuracy can be formed, and the color filter layer 40 has stain defects due to deterioration due to moisture absorption. Image deterioration can be suppressed.

In this first embodiment, of the three color (red (R), green (G), blue (B)) color filter units (41, 42, 43), the green (G) second color filter The case where the light incident surface side of the portion 42 is selectively covered with the inorganic layer 50 having a refractive index higher than that of the color filter layer 40 has been described. However, the present technology is not limited to the configuration of the first embodiment in which the second color filter portion 42 is selectively covered with the inorganic layer 50. For example, the light incident surface side of the red (R) first color filter unit 41 or the light incident surface side of the blue (B) third color filter unit 43 may be selectively covered with the inorganic layer 50. When the light incident surface side of the first color filter unit 41 is selectively covered with the inorganic layer 50, it is preferable to form the first color filter unit 41 before the second and third

color filter units

42 and 43. .. When the light incident surface side of the third color filter unit 43 is selectively covered with the inorganic layer 50, the third color filter unit 43 is formed before the first and second

color filter units

41 and 42. Is preferable.

(Second Embodiment)
The solid-state image sensor 1A according to the second embodiment of the present technology basically has the same configuration as the solid-state image sensor 1 according to the first embodiment described above, and as shown in FIG. 6, the first embodiment It has an inorganic layer 50A instead of the inorganic layer 50 of the above. Other configurations are the same as those in the first embodiment described above.

As shown in FIG. 3, the inorganic layer 50 of the solid-state image sensor 1 according to the first embodiment transmits light higher than the refractive index of the color filter layer 40 including the three-color color filter portions (41, 42, 43). It is composed of a monolayer film made of a film 51.
On the other hand, as shown in FIG. 6, the inorganic layer 50A of the solid-state imaging device 1A according to the second embodiment selectively covers the color filter portion of a predetermined color among the color filter portions of two or more colors. The structure includes a transmitting film 51 and a light transmitting film 55 that covers the light incident surface side of the light transmitting film 51 and covers the light incident surface side of the remaining color filter portions of other colors. In this second embodiment, the light transmitting film 51 selectively covers the light incident surface side of the green (G) second color filter unit 42. That is, the thickness of the inorganic layer 50A is different between the second color filter unit 42 and the first and third

color filter units

41 and 43, and the portion covering the second color filter unit 42 is the first and third colors. It is thicker than the portions that cover the

filter portions

41 and 43.
The light transmitting film 55 covers the light incident surface side of the light transmitting film 51 on the second color filter unit 42, and the light of each of the red (R) color filter unit 41 and the blue (B) color filter unit 43. It covers the incident surface side. Then, as shown on the right side of FIG. 6, the light transmitting film 55 is provided over the pixel array portion 2A and the peripheral portion 2B, and the outermost peripheral end side surface 40a of the color filter layer 40 is along the outermost periphery. Covering.
That is, the inorganic layer 50A covers the entire surface of the color filter layer 40 on the light incident surface side, and also covers the outermost peripheral end side surface 40a of the color filter layer 40. Like the light transmitting film 51, the light transmitting film 55 is made of, for example, an aluminum oxide film, a hafnium oxide film, and a silicon nitride film having a refractive index higher than that of the color filter layer 40 including the first to third color filter portions 41 to 43. It is composed of either. Further, the light transmitting film 55 may be configured by laminating any two or more of an aluminum oxide film, a hafnium oxide film, and a silicon nitride film.

According to the solid-state image sensor 1A according to the second embodiment, the moisture absorption of the entire color filter layer 40 having the first to third color filter units 41 to 43 can be suppressed by the inorganic layer 50A, so that the color due to the moisture absorption can be suppressed. Deterioration of the filter layer 40 can be further suppressed as compared with the first embodiment. This makes it possible to further suppress image deterioration such as stain defects caused by deterioration of the color filter layer 40 due to moisture absorption.

Even if the light incident surface side of the red (R) first color filter unit 41 or the light incident surface side of the blue (B) third color filter unit 43 is selectively covered with the light transmitting film 51. good.
Further, the light transmitting film 55 may be configured not to cover the end side surface 40a of the color filter layer 40.

(Third Embodiment)
The solid-state image sensor 1B according to the third embodiment of the present technology has basically the same configuration as the solid-state image sensor 1 according to the first embodiment described above, and as shown in FIG. 7, the first embodiment It has an inorganic layer 50B instead of the inorganic layer 50 of the above. Other configurations are the same as those in the first embodiment described above.

As shown in FIG. 3, the inorganic layer 50 of the solid-state image sensor 1 according to the first embodiment transmits light higher than the refractive index of the color filter layer 40 including the three-color color filter portions (41, 42, 43). It is composed of a monolayer film made of a film 51.
On the other hand, as shown in FIG. 7, the solid-state image sensor 1B according to the third embodiment is formed from the light transmitting film 55 covering each light incident surface side of all the color filter parts of the two or more color filter parts. It is composed of a single-layer film. In this third embodiment, the light transmitting film 55 is a red (R) first color filter unit 41, a green (G) second color filter unit 42, and a blue (B) third color filter unit 43, respectively. It covers the light incident surface side of. The light transmitting film 55 also covers the outermost peripheral end side surface 40a of the color filter layer 40 along the outermost circumference, as in the second embodiment. That is, the inorganic layer 50B covers the entire surface of the color filter layer 40 having the color filter portions (41, 42, 43) of three colors on the light incident surface side, and also the outermost peripheral end side surface 40a of the color filter layer 40. Covering.

According to the solid-state image sensor 1B according to the third embodiment, the moisture absorption of the entire color filter layer 40 can be suppressed by the inorganic layer 50B, so that the alteration of the color filter layer 40 due to the moisture absorption is compared with that of the first embodiment. Can be further suppressed. This makes it possible to further suppress image deterioration such as stain defects caused by deterioration of the color filter layer 40 due to moisture absorption.
The light transmitting film 55 may be configured not to cover the end side surface 40a of the color filter layer 40.

(Fourth Embodiment)
≪Structure of solid-state image sensor≫
The solid-state image sensor 1C according to the fourth embodiment of the present technology basically has the same configuration as the solid-state image sensor 1 according to the first embodiment described above, and as shown in FIG. 8, the first embodiment It has an inorganic layer 50C instead of the inorganic layer 50 of the above. Other configurations are the same as those in the first embodiment described above.

As shown in FIG. 8, the inorganic layer 50C of the solid-state image sensor 1C according to the fourth embodiment has a configuration including light transmitting

films

51, 52, and 55.
Similar to the first embodiment described above, the light transmitting film 51 selects the light incident surface side of the green (G) second color filter unit 42 from the three color color filter units (41, 42, 43). Covers the target. Then, as described in the first embodiment described above, the light transmitting film 51 also functions as an etching stopper when the green (G) color filter film is etched to form the second color filter portion 42. ..
The light transmitting film 52 covers the light incident surface side of the light transmitting film 51 on the second color filter unit 42, and is the first of the red (R) of the remaining two color filter units (41, 43). It covers the light incident surface side of the color filter unit 41.
The light transmitting film 52 is also arranged between the red (R) first color filter unit 41 and the blue (B) third color filter unit 43, and the first color filter unit 41 and the first color filter unit 41 and the light transmitting film 52 are arranged between them. Each side surface of the third color filter unit 43 is also covered.
Further, the light transmitting film 52 is also arranged between the second color filter unit 42 of green (G) and the third color filter unit 43 of blue (B), and the second color filter unit 42 and the second color filter unit 42 are arranged between them. Each side surface of the third color filter unit 43 is also covered.
The light transmitting film 55 includes a light transmitting film 51 on the second color filter unit 42, a light transmitting film 52 on the first color filter unit 41 and the second color filter unit 42, and the remaining third color filter unit 43. It covers each light incident surface side. Although the light transmitting film 55 is not shown in detail in FIG. 8, referring to FIG. 6, the light transmitting film 55 also includes the outermost peripheral end side surface 40a of the color filter layer 40, as in the second embodiment described above. It covers along the outermost circumference.

That is, the inorganic layer 50C covers the entire surface of the color filter layer 40 on the incident surface side, and the first and third

color filter units

41 and 43 are located between the first color filter unit 41 and the third color filter unit 43. Each side surface is covered, and each side surface of the second and third

color filter units

42 and 43 is also covered between the second color filter unit 42 and the third color filter unit 43. The inorganic layer 50C also covers the outermost peripheral end side surface 40a of the color filter layer 40.
The thickness of the inorganic layer 50C is different between the first color filter unit 41, the second color filter unit 42, and the third color filter unit 43. The portion of the inorganic layer 50C that covers the second color filter portion 42 is the thickest, then the portion that covers the first color filter portion 42 is thick, and the portion that covers the third color filter portion 43 is the thinnest.

Like the

light transmitting films

51 and 55, the light transmitting film 52 has a higher refractive index than the refractive index of the color filter layer 40 including the first to third color filter units 41 to 43, for example, an aluminum oxide film, a hafnium oxide film, and silicon nitride. It is composed of any of the membranes. Further, the light transmitting film 52 may be configured by laminating any two or more of an aluminum oxide film, a hafnium oxide film, and a silicon nitride film.

As shown in FIG. 8, the light transmitting film 52 is also arranged between the blue (B) third color filter unit 43 and the photoelectric conversion unit 23. In this fourth embodiment, since the adhesive film 38 is provided, the light transmitting film 52 is provided between the third color filter portion 43 and the adhesive film 38. That is, the inorganic layer 50C is arranged on the light incident surface side of the color filter layer 40, and is further arranged on the side opposite to the light incident surface side of the color filter layer 40.
According to the solid-state image sensor 1C according to the fourth embodiment, the moisture absorption of the entire color filter layer 40 can be suppressed by the inorganic layer 50C. Therefore, the alteration of the color filter layer 40 due to the moisture absorption is compared with that of the first embodiment. Can be further suppressed. This makes it possible to further suppress image deterioration such as stain defects caused by deterioration of the color filter layer 40 due to moisture absorption.

≪Manufacturing method of solid-state image sensor≫
Next, a method of manufacturing the solid-state image sensor 1C according to the fourth embodiment will be described with reference to FIGS. 9A to 9E.
First, the same steps as those shown in FIGS. 4A to 4D and 5A to 5G of the first embodiment are performed, and as shown in FIG. 9A, photoelectric conversion that receives light of a green wavelength and performs photoelectric conversion. A green (G) second color filter portion 42 whose upper surface is covered with a light transmitting film 51 is formed on the portion 23. The etching mask RM1 (see FIG. 5F) on the second color filter unit 42 is removed by overetching.

Next, as shown in FIG. 9B, among the plurality of photoelectric conversion units 23, the photoelectric conversion unit 23 that receives and converts light having a red wavelength is placed so as to be planarly overlapped with the photoelectric conversion unit 23. The red (R) first color filter portion 41 is formed. The first color filter section 41 is formed in the same process as the step of forming the green second color filter section 42 excluding the step of forming the light transmitting film 51.

Next, as shown in FIG. 9C, the first and second

color filter portions

41, 42 cover the entire surface of the semiconductor layer 20 on the second surface S2 side including the light transmission film 51 and the first color filter portion 41. A light transmitting film 52 having a refractive index higher than that of As the light transmitting film 52, any one of an aluminum oxide film, a hafnium oxide film, and a silicon nitride film can be used. These films can be formed by a CVD method or a vapor deposition method.
In this step, a light transmitting film 52 is also formed on the photoelectric conversion unit 23 that receives light having a blue wavelength and performs photoelectric conversion. Further, of the side surfaces of the second color filter unit 42, the side surface that is not in contact with the first color filter unit 41 is covered with the light transmitting film 52. Further, of the side surfaces of the first color filter unit 41, although not shown in detail, the side surfaces that are not in contact with the second color filter unit 42 are also covered with the light transmitting film 52.

Next, as shown in FIG. 9D, among the plurality of photoelectric conversion units 23, the photoelectric conversion unit 23 that receives and converts light having a blue wavelength is placed so as to be planarly overlapped with the photoelectric conversion unit 23. The blue (B) third color filter portion 43 is formed. The third color filter section 43 is formed in the same process as the step of forming the green second color filter section 42 excluding the step of forming the light transmitting film 51.
In this step, the third color filter unit 43 is arranged on the light incident surface side of the photoelectric conversion unit 23 via the light transmitting film 52.
Further, in this step, the light transmitting film 52 is also arranged between the second color filter unit 42 and the third color filter unit 43, and the light transmitting film 52 is arranged between the second color filter unit 42 and the third color filter unit 43, respectively. The side surface is also covered with the light transmitting film 52.
Further, in this step, the light transmitting film 52 is also arranged between the first color filter unit 41 and the second color filter unit 42, and the light transmitting film 52 is arranged between the first color filter unit 41 and the third color filter unit 43, respectively. The side surface is also covered with the light transmitting film 52.

Next, as shown in FIG. 9E, the first, second, and third color filter units (41, 42, 43) cover the entire surface of the semiconductor layer 20 including the light transmission film 52 and the third color filter unit 43. ), A light transmitting film 55 having a refractive index higher than that of) is formed. As the light transmitting film 55, any of an aluminum oxide film, a hafnium oxide film, and a silicon nitride film can be used. These films can be formed by a CVD method or a vapor deposition method.
By this step, the inorganic layer 50C including the

light transmitting films

51, 52 and 55 is formed. Further, a color filter layer 40 having first to third color filter portions (41, 42, 43) and having an inorganic layer 50C is formed.
In this step, the outermost peripheral end side surface 40a of the color filter layer 40 is also covered with the light transmitting film along the outermost circumference.

Next, a plurality of microlenses 59 are formed on the light incident surface side of the color filter layer 40. As a result, the solid-state image sensor 1C shown in FIG. 8 is almost completed.

According to the method for manufacturing the solid-state image sensor 1C according to the fourth embodiment, the high-precision color filter layer 40 can be formed in the same manner as in the first embodiment described above. Further, image deterioration such as stain defects caused by deterioration of the color filter layer 40 due to moisture absorption can be further suppressed as compared with the first embodiment.

(Fifth Embodiment)
≪Structure of solid-state image sensor≫
The solid-state image sensor 1D according to the fifth embodiment of the present technology has basically the same configuration as the solid-state image sensor 1 according to the first embodiment described above, and as shown in FIG. 10, the first embodiment It has an inorganic layer 50D instead of the inorganic layer 50 of the above. Other configurations are the same as those in the first embodiment described above.

As shown in FIG. 10, the inorganic layer 50D of the solid-state image sensor 1D according to the fifth embodiment has a configuration including light transmitting

films

51, 52, 54, and 55.
The light transmitting film 51 selectively covers the light incident surface side of the green (G) second color filter unit 42 among the three color color filter units (41, 42, 43). As described in the first embodiment described above, the light transmitting film 51 also functions as an etching stopper when the green (G) color filter film is etched to form the second color filter portion 42.

The light transmitting film 53 covers the light incident surface side of the light transmitting film 51 on the second color filter unit 42. The light transmitting film 53 is also arranged between the second color filter unit 42 and the first color filter unit 41, and the side surfaces of the second color filter unit 42 and the first color filter unit 41 are located between them. Also covers.
Further, the light transmitting film 53 is also arranged between the second color filter unit 42 and the third color filter unit 43, and the side surfaces of the second color filter unit 42 and the third color filter unit 43 are located between them. Also covers.
Further, the light transmitting film 53 is also arranged between the first color filter unit 41 and the third color filter unit 43, and the side surfaces of the first color filter unit 41 and the third color filter unit 43 are located between them. Also covers.

The light transmitting film 54 covers the light incident surface side of the light transmitting film 53 on the second color filter unit 42 and the light incident surface side of the first color filter unit 41.
The light transmitting film 54 is also arranged between the second color filter unit 42 and the third color filter unit 43, and the side surfaces of the second color filter unit 42 and the third color filter unit 43 are located between them. Also covers.
Further, the light transmitting film 54 is also arranged between the first color filter unit 41 and the third color filter unit 43, and the side surfaces of the first color filter unit 41 and the third color filter unit 43 are located between them. Also covers.

The light transmitting film 55 covers the light incident surface side of the light transmitting film 54 on the second color filter unit 42 and the first color filter unit 41, and the light incident surface side of the third color filter unit 43. Although the light transmitting film 55 is not shown in FIG. 10, referring to FIG. 6, the outermost peripheral end side surface 40a of the color filter layer 40 is also on the outermost circumference, as in the second embodiment described above. Covering along.

That is, the inorganic layer 50D covers the entire surface of the color filter layer 40 on the incident surface side, and the second and third

color filter units

42 and 43 are located between the second color filter unit 42 and the third color filter unit 43. Each side surface, between the second color filter unit 42 and the first color filter unit 41, each side surface of the second and first

color filter units

42 and 41, and the first color filter unit 41 and the third color filter unit The sides of the first and third

color filter portions

41 and 43 are also covered with the 43.
The thickness of the inorganic layer 50D is different between the first color filter unit 41, the second color filter unit 42, and the third color filter unit 43. The portion of the inorganic layer 50D that covers the second color filter portion 42 is the thickest, then the portion that covers the first color filter portion 42 is thick, and the portion that covers the third color filter portion 43 is the thinnest.

Similar to the

light transmitting films

51 and 55, the

light transmitting films

53 and 54 have a higher refractive index than the refractive index of the color filter layer 40 including the first to third color filter portions 41 to 43, for example, an aluminum oxide film, a hafnium oxide film and the like. It is composed of any of silicon nitride films. Further, the

light transmitting films

53 and 54 may be configured by laminating any two or more of an aluminum oxide film, a hafnium oxide film, and a silicon nitride film.

As shown in FIG. 10, the light transmitting film 53 is formed between the red (R) first color filter unit 41 and the photoelectric conversion unit 23, and the blue (b) third color filter unit 43 and the photoelectric conversion unit 23. It is also placed between and. Since the adhesive film 38 is also provided in the fifth embodiment, the light transmitting film 53 is arranged between the first and third

color filter portions

41 and 43 and the adhesive film 38.
The light transmitting film 54 is also arranged between the third color filter unit 43 and the light transmitting film 53 directly below the third color filter unit 43.
That is, the inorganic layer 50D is arranged on the light incident surface side of the color filter layer 40, and is further arranged on the side opposite to the light incident surface side of the color filter layer 40.
The light transmitting film 53 also functions as an etching stopper when the red color filter film is etched to form the red (R) first color filter portion 41 in the manufacturing process of the solid-state imaging device 1D.

≪Manufacturing method of solid-state image sensor≫
Next, a method of manufacturing the solid-state image sensor 1D according to the fifth embodiment will be described with reference to FIGS. 11A to 11F.
First, the same steps as those shown in FIGS. 4A to 4D and 5A to 5G of the first embodiment are performed, and as shown in FIG. 11A, photoelectric conversion that receives light of a green wavelength and performs photoelectric conversion. A green (G) second color filter portion 42 whose upper surface is covered with a light transmitting film 51 is formed on the portion 23. The etching mask RM1 (see FIG. 5F) on the second color filter unit 42 is removed by overetching.

Next, as shown in FIG. 11B, a light transmitting film 53 having a refractive index higher than that of the second color filter unit 42 is formed on the entire surface of the semiconductor layer 20 including the light transmitting film 51. As the light transmitting film 53, any of an aluminum oxide film, a hafnium oxide film, and a silicon nitride film can be used. These films can be formed by a CVD method or a vapor deposition method.
In this step, a light transmitting film 53 is also formed on the photoelectric conversion unit 23 that receives light of a red wavelength and performs photoelectric conversion, and on the photoelectric conversion unit 23 that receives light of a blue wavelength and performs photoelectric conversion. ..

Next, as shown in FIG. 11C, among the plurality of photoelectric conversion units 23, the photoelectric conversion unit 23 that receives and converts light having a red wavelength is placed so as to be planarly overlapped with the photoelectric conversion unit 23. The red (R) first color filter portion 41 is formed. The first color filter section 41 is formed in the same process as the step of forming the green second color filter section 42 excluding the step of forming the light transmitting film 51.
In this step, the first color filter unit 41 is arranged on the light incident surface side of the photoelectric conversion unit 23 via the light transmitting film 53.
Further, in this step, the light transmitting film 53 is also arranged between the second color filter unit 42 and the first color filter unit 41, and in the meantime, each of the second color filter unit 42 and the first color filter unit 41 is arranged. The side surface is also covered with the light transmitting film 53.
Further, in this step, the light transmitting film 53 on the photoelectric conversion unit 23 that receives light having a blue wavelength and performs photoelectric conversion is a red (R) first color obtained by etching a red (R) color fill film. It also functions as an etching mask when forming the filter portion 41.

Next, as shown in FIG. 11D, the first and second colors are applied to the entire surface of the semiconductor layer 20 on the second surface S2 side including the light incident surface side of each of the light transmitting film 53 and the first color filter unit 41. A light transmitting film 54 having a refractive index higher than that of the

filter portions

41 and 42 is formed. As the light transmitting film 54, any of an aluminum oxide film, a hafnium oxide film, and a silicon nitride film can be used. These films can be formed by a CVD method or a vapor deposition method.

Next, as shown in FIG. 11E, among the plurality of photoelectric conversion units 23, the photoelectric conversion unit 23 is planar with the photoelectric conversion unit 23 on the light incident surface side of the photoelectric conversion unit 23 that receives and converts light having a blue wavelength. The blue (B) third color filter portion 43 is formed so as to overlap with the above. The third color filter section 43 is formed in the same process as the step of forming the green second color filter section 42 excluding the step of forming the light transmitting film 51.
In this step, the third color filter unit 43 is arranged on the light incident surface side of the photoelectric conversion unit 23 via the

light transmitting films

53 and 54.
Further, in this step, the

light transmitting films

53 and 54 are also arranged between the second color filter unit 42 and the third color filter unit 43, and the second color filter unit 42 and the third color filter unit 43 are arranged between them. Each side surface is also covered with light transmitting

films

53 and 54.
Further, in this step, the light transmitting film 54 is also arranged between the first color filter unit 41 and the third color filter unit 43, and in the meantime, each of the first color filter unit 41 and the third color filter unit 43 is arranged. The side surface is also covered with the light transmitting film 54.

Next, as shown in FIG. 11F, the first to third colors are applied to the entire surface of the semiconductor layer 20 on the second surface S2 side including the light incident surface side of each of the light transmitting film 54 and the third color filter unit 43. A light transmitting film 55 having a refractive index higher than that of the filter portions 41 to 43 is formed. As the light transmitting film 55, any of an aluminum oxide film, a hafnium oxide film, and a silicon nitride film can be used. These films can be formed by a CVD method or a vapor deposition method.
In this step, the outermost peripheral end side surface 40a of the color filter layer 40 is also covered with the light transmitting film 55 along the outermost circumference.

By this step, the inorganic layer 50D including the

light transmitting films

51, 53, 54 and 55 is formed. Further, a color filter layer 40 having first to third color filter portions (41, 42, 43) and having an inorganic layer 50D is formed.

Next, a plurality of microlenses 59 are formed on the light incident surface side of the color filter layer 40. As a result, the solid-state image sensor 1D shown in FIG. 10 is almost completed.

According to the method for manufacturing the solid-state image sensor 1D according to the fifth embodiment, the high-precision color filter layer 40 can be formed in the same manner as in the first embodiment described above. Further, image deterioration such as stain defects caused by deterioration of the color filter layer 40 due to moisture absorption can be further suppressed as compared with the first embodiment.

(Sixth Embodiment)
The solid-state image sensor 1E according to the sixth embodiment of the present technology has basically the same configuration as the solid-state image sensor 1 according to the first embodiment described above, and as shown in FIG. 12, the first embodiment The inorganic layer 50E is provided in place of the inorganic layer 50 of the above. Other configurations are the same as those in the first embodiment described above.
As shown in FIG. 12, the inorganic layer 50E of the solid-state image sensor 1E according to the sixth embodiment has a configuration including light transmitting

films

51 and 57.
The light transmitting film 51 selectively covers the light incident surface side of the green (G) second color filter unit 42 among the three color color filter units (41, 42, 43). As described in the first embodiment described above, the light transmitting film 51 also functions as an etching stopper when forming the second color filter portion 42.

The light transmitting film 57 is arranged between each of the first to third color filter units 41 to 43 and the photoelectric conversion unit 23. In this sixth embodiment, since the adhesive film 38 is provided as in the first embodiment described above, the light transmitting film 57 includes each of the first to third color filter portions 41 to 43 and the adhesive film 38. It is provided between. That is, the inorganic layer 50E is arranged on the light incident surface side of the color filter layer 40, and is further arranged on the side opposite to the light incident surface side of the color filter layer 40. Like the light transmitting film 51, the light transmitting film 57 is made of, for example, an aluminum oxide film, a hafnium oxide film, and a silicon nitride film having a refractive index higher than that of the color filter layer 40 including the first to third color filter portions 41 to 43. It is composed of either. Further, the light transmitting film 57 may be configured by laminating any two or more of an aluminum oxide film, a hafnium oxide film, and a silicon nitride film.

In the method for manufacturing the solid-state image sensor 1E according to the sixth embodiment, as shown in FIG. 13A, a light transmitting film 57 is formed on the entire surface of the semiconductor layer 20 including the adhesive film 38, and then shown in FIG. 13B. As described above, the first to third color filter portions 41 to 43 are formed on the light transmitting film 57. That is, the light transmitting film 57 is formed before forming the first to third color filter portions 41 to 43.
By forming the light transmitting film 57 before forming the first to third color filter sections 41 to 43 in this way, the green (G) color filter film is etched and the second color filter section 42 is formed. The step of forming the first color filter portion 41 by etching the red (R) color filter film, and the step of etching the blue (B) color filter film to form the third color filter portion 43. Since the light transmitting film 57 functions as an etching stopper in the process, etching damage to the adhesive film 38, the flattening film 36, the photoelectric conversion unit 23, etc. directly under each of the first to third color filter units 41 to 43 is caused. It can be suppressed. Therefore, according to the solid-state image sensor 1E according to the sixth embodiment, image deterioration such as stain defects due to deterioration due to moisture absorption of the color filter layer 40 can be suppressed, and the adhesive film 38 and the flattening film 36 can be suppressed. In addition, it is possible to suppress a decrease in the manufacturing yield due to etching damage to the photoelectric conversion unit 23 and the like.

Note that this sixth embodiment has described the case where the light transmitting film 57 is applied to the above-mentioned inorganic layer 50 of the first embodiment. The application of the light transmitting film 57 is not limited to the inorganic layer 50 of the first embodiment described above. For example, the light transmitting film 57 can also be applied to the respective inorganic layers 50A to 50D of the second to fifth embodiments described above. In this case, in any of the second to fifth embodiments, the light transmitting film 57 is formed before forming the first to third color filter portions 41 to 43.

(Example of application to electronic devices)
The present technology (technology according to the present disclosure) is applied to various electronic devices such as an image pickup device such as a digital still camera and a digital video camera, a mobile phone having an image pickup function, or another device having an image pickup function. May be done.
FIG. 14 is a diagram showing an example of a schematic configuration of an electronic device (for example, a camera) to which the present technology can be applied.
As shown in FIG. 14, the electronic device 100 includes a solid-state image sensor 101, an optical lens 102, a shutter device 103, a drive circuit 104, and a signal processing circuit 105. In this electronic device 100, any one of the solid-

state image sensors

1, 1A, 1B, 1C, 1D, and 1E according to the first to sixth embodiments described above is used as the solid-state image sensor 101.

The optical lens 102 forms an image of image light (incident light 106) from the subject on the image pickup surface of the solid-state image pickup device 101. As a result, the signal charge is accumulated in the solid-state image sensor 101 for a certain period of time. The shutter device 103 controls the light irradiation period and the light blocking period of the solid-state image sensor 101. The drive circuit 104 supplies a drive signal that controls the transfer operation of the solid-state image sensor 101 and the shutter operation of the shutter device 103. The signal transfer of the solid-state image sensor 101 is performed by the drive signal (timing signal) supplied from the drive circuit 104. The signal processing circuit 105 performs various signal processing on the signal (pixel signal) output from the solid-state image sensor 101. The signal-processed video signal is stored in a storage medium such as a memory or output to a monitor.
The electronic device 100 to which the solid-state image sensor 1 can be applied is not limited to the camera, but can also be applied to other electronic devices. For example, it may be applied to an imaging device such as a camera module for mobile devices such as mobile phones and tablet terminals.

The above is an example of an electronic device to which this technology can be applied. The present technology can be applied to the solid-state image sensor 101 among the configurations described above. Specifically, the solid-state image sensor 1 of FIG. 1 can be applied to the solid-state image sensor 101. By applying this technique to the solid-state image sensor 101, a better photographed image can be obtained.

(Example of application to electronic devices)
FIG. 15 is a diagram showing an example of a schematic configuration of an image pickup apparatus as an electronic device to which the present technology (technology according to the present disclosure) can be applied.

The image pickup device 1000 in FIG. 15 is a video camera, a digital still camera, or the like. The image pickup device 1000 includes a lens group 1001, a solid-state image sensor 1002, a DSP circuit 1003, a frame memory 1004, a display unit 1005, a storage unit 1006, an operation unit 1007, and a power supply unit 1008. The DSP circuit 1003, the frame memory 1004, the display unit 1005, the storage unit 1006, the operation unit 1007, and the power supply unit 1008 are connected to each other via the pass line 1009.

The lens group 1001 captures incident light (image light) from the subject and forms an image on the image pickup surface of the solid-state image pickup device 1002. The solid-state image sensor 1002 comprises the solid-state image sensor of the first to sixth embodiments described above. The solid-state image sensor 1002 converts the amount of incident light imaged on the imaging surface by the lens group 1001 into an electric signal on a pixel-by-pixel basis and supplies it to the DSP circuit 1003 as a pixel signal.

The DSP circuit 1003 performs predetermined image processing on the pixel signal supplied from the solid-state image sensor 1002, supplies the image signal after the image processing to the frame memory 1004 in frame units, and temporarily stores the image signal.

The display unit 1005 is composed of a panel-type display device such as a liquid crystal panel or an organic EL (Electro Luminescence) panel, and displays an image based on a frame-based pixel signal temporarily stored in the frame memory 1004.

The storage unit 1006 is composed of a DVD (Digital Versatile Disk), a flash memory, or the like, and reads and stores a frame-by-frame pixel signal temporarily stored in the frame memory 1004.

The operation unit 1007 issues operation commands for various functions of the image pickup apparatus 1000 under the operation of the user. The power supply unit 1008 supplies power to the DSP circuit 1003, the frame memory 1004, the display unit 1005, the storage unit 1006, and the operation unit 1007 as appropriate.

The electronic device to which this technology is applied may be any device that uses a CMOS image sensor for the image acquisition unit (photoelectric conversion unit), and in addition to the image pickup device 1000, a portable terminal device having an image pickup function, and a CMOS image for the image reading unit. There are copiers that use sensors.

(Example of application to mobile)
The present technology (the technology according to the present disclosure) is mounted on any kind of moving body such as an automobile, an electric vehicle, a hybrid electric vehicle, a motorcycle, a bicycle, a personal mobility, an airplane, a drone, a ship, and a robot. It may be realized as a device.

FIG. 16 is a block diagram showing a schematic configuration example of a vehicle control system, which is an example of a mobile control system to which the present technology can be applied.

The vehicle control system 12000 includes a plurality of electronic control units connected via the communication network 12001. In the example shown in FIG. 15, the vehicle control system 12000 includes a drive system control unit 12010, a body system control unit 12020, an outside information detection unit 12030, an in-vehicle information detection unit 12040, and an integrated control unit 12050. Further, as a functional configuration of the integrated control unit 12050, a microcomputer 12051, an audio image output unit 12052, and an in-vehicle network I / F (interface) 12053 are shown.

The drive system control unit 12010 controls the operation of the device related to the drive system of the vehicle according to various programs. For example, the drive system control unit 12010 provides a driving force generator for generating the driving force of the vehicle such as an internal combustion engine or a driving motor, a driving force transmission mechanism for transmitting the driving force to the wheels, and a steering angle of the vehicle. It functions as a control device such as a steering mechanism for adjusting and a braking device for generating a braking force of a vehicle.

The body system control unit 12020 controls the operation of various devices mounted on the vehicle body according to various programs. For example, the body system control unit 12020 functions as a keyless entry system, a smart key system, a power window device, or a control device for various lamps such as a head lamp, a back lamp, a brake lamp, a winker, or a fog lamp. In this case, the body system control unit 12020 may be input with radio waves transmitted from a portable device that substitutes for the key or signals of various switches. The body system control unit 12020 receives inputs of these radio waves or signals and controls a vehicle door lock device, a power window device, a lamp, and the like.

The vehicle outside information detection unit 12030 detects information outside the vehicle equipped with the vehicle control system 12000. For example, the imaging unit 12031 is connected to the vehicle exterior information detection unit 12030. The vehicle outside information detection unit 12030 causes the image pickup unit 12031 to capture an image of the outside of the vehicle and receives the captured image. The vehicle exterior information detection unit 12030 may perform object detection processing or distance detection processing such as a person, a vehicle, an obstacle, a sign, or a character on the road surface based on the received image.

The imaging unit 12031 is an optical sensor that receives light and outputs an electric signal according to the amount of the light received. The image pickup unit 12031 can output an electric signal as an image or can output it as distance measurement information. Further, the light received by the imaging unit 12031 may be visible light or invisible light such as infrared light.

The in-vehicle information detection unit 12040 detects the in-vehicle information. For example, a driver state detection unit 12041 that detects the driver's state is connected to the in-vehicle information detection unit 12040. The driver state detection unit 12041 includes, for example, a camera that images the driver, and the in-vehicle information detection unit 12040 determines the degree of fatigue or concentration of the driver based on the detection information input from the driver state detection unit 12041. It may be calculated, or it may be determined whether the driver is dozing.

The microcomputer 12051 calculates the control target value of the driving force generator, the steering mechanism, or the braking device based on the information inside and outside the vehicle acquired by the outside information detection unit 12030 or the inside information detection unit 12040, and the drive system control unit. A control command can be output to 12010. For example, the microcomputer 12051 realizes ADAS (Advanced Driver Assistance System) functions including vehicle collision avoidance or impact mitigation, follow-up driving based on inter-vehicle distance, vehicle speed maintenance driving, vehicle collision warning, vehicle lane deviation warning, and the like. It is possible to perform cooperative control for the purpose of.

Further, the microcomputer 12051 controls the driving force generator, the steering mechanism, the braking device, and the like based on the information around the vehicle acquired by the vehicle exterior information detection unit 12030 or the vehicle interior information detection unit 12040, so that the driver can control the vehicle. It is possible to perform coordinated control for the purpose of automatic driving, etc., which runs autonomously without depending on the operation.

Further, the microcomputer 12051 can output a control command to the body system control unit 12020 based on the information outside the vehicle acquired by the vehicle exterior information detection unit 12030. For example, the microcomputer 12051 controls the headlamps according to the position of the preceding vehicle or the oncoming vehicle detected by the external information detection unit 12030, and performs coordinated control for the purpose of anti-glare such as switching the high beam to the low beam. It can be carried out.

The audio image output unit 12052 transmits the output signal of at least one of the audio and the image to the output device capable of visually or audibly notifying the passenger or the outside of the vehicle of the information. In the example of FIG. 16, an audio speaker 12061, a display unit 12062, and an instrument panel 12063 are exemplified as output devices. The display unit 12062 may include, for example, at least one of an onboard display and a heads-up display.

FIG. 17 is a diagram showing an example of the installation position of the imaging unit 12031.
In FIG. 17, the vehicle 12100 has

image pickup units

12101, 12102, 12103, 12104, 12105 as the image pickup unit 12031.

The

imaging units

12101, 12102, 12103, 12104, 12105 are provided at positions such as the front nose, side mirrors, rear bumpers, back doors, and the upper part of the windshield in the vehicle interior of the vehicle 12100, for example. The image pickup unit 12101 provided on the front nose and the image pickup section 12105 provided on the upper part of the windshield in the vehicle interior mainly acquire an image in front of the vehicle 12100. The

imaging units

12102 and 12103 provided in the side mirrors mainly acquire images of the side of the vehicle 12100. The imaging unit 12104 provided on the rear bumper or the back door mainly acquires an image of the rear of the vehicle 12100. The images in front acquired by the

imaging units

12101 and 12105 are mainly used for detecting a preceding vehicle or a pedestrian, an obstacle, a traffic light, a traffic sign, a lane, or the like.

Note that FIG. 17 shows an example of the photographing range of the imaging units 12101 to 12104. The imaging range 12111 indicates the imaging range of the imaging unit 12101 provided on the front nose, the imaging ranges 12112 and 12113 indicate the imaging ranges of the

imaging units

12102 and 12103 provided on the side mirrors, respectively, and the imaging range 12114 indicates the imaging range of the

imaging units

12102 and 12103. The imaging range of the imaging unit 12104 provided on the rear bumper or the back door is shown. For example, by superimposing the image data captured by the imaging units 12101 to 12104, a bird's-eye view image of the vehicle 12100 as viewed from above can be obtained.

At least one of the imaging units 12101 to 12104 may have a function of acquiring distance information. For example, at least one of the image pickup units 12101 to 12104 may be a stereo camera composed of a plurality of image pickup elements, or an image pickup element having pixels for phase difference detection.

For example, the microcomputer 12051 has a distance to each three-dimensional object within the imaging range 12111 to 12114 based on the distance information obtained from the imaging units 12101 to 12104, and a temporal change of this distance (relative velocity with respect to the vehicle 12100). By obtaining can. Further, the microcomputer 12051 can set an inter-vehicle distance to be secured in front of the preceding vehicle in advance, and can perform automatic braking control (including follow-up stop control), automatic acceleration control (including follow-up start control), and the like. In this way, it is possible to perform coordinated control for the purpose of automatic driving or the like in which the vehicle travels autonomously without depending on the operation of the driver.

For example, the microcomputer 12051 converts three-dimensional object data related to a three-dimensional object into two-wheeled vehicles, ordinary vehicles, large vehicles, pedestrians, electric poles, and other three-dimensional objects based on the distance information obtained from the imaging units 12101 to 12104. It can be classified and extracted and used for automatic avoidance of obstacles. For example, the microcomputer 12051 distinguishes obstacles around the vehicle 12100 into obstacles that can be seen by the driver of the vehicle 12100 and obstacles that are difficult to see. Then, the microcomputer 12051 determines the collision risk indicating the risk of collision with each obstacle, and when the collision risk is equal to or higher than the set value and there is a possibility of collision, the microcomputer 12051 is used via the audio speaker 12061 or the display unit 12062. By outputting an alarm to the driver and performing forced deceleration and avoidance steering via the drive system control unit 12010, driving support for collision avoidance can be provided.

At least one of the imaging units 12101 to 12104 may be an infrared camera that detects infrared rays. For example, the microcomputer 12051 can recognize a pedestrian by determining whether or not a pedestrian is present in the captured image of the imaging units 12101 to 12104. Such pedestrian recognition includes, for example, a procedure for extracting feature points in an image captured by an imaging unit 12101 to 12104 as an infrared camera, and a pattern matching process for a series of feature points indicating the outline of an object to determine whether or not the pedestrian is a pedestrian. It is done by the procedure to determine. When the microcomputer 12051 determines that a pedestrian is present in the captured images of the imaging units 12101 to 12104 and recognizes the pedestrian, the audio image output unit 12052 outputs a square contour line for emphasizing the recognized pedestrian. The display unit 12062 is controlled so as to superimpose and display. Further, the audio image output unit 12052 may control the display unit 12062 so as to display an icon or the like indicating a pedestrian at a desired position.

The above is an example of a vehicle control system to which this technology can be applied. The present technology can be applied to the imaging unit 12031 among the configurations described above. Specifically, the solid-

state image sensors

1, 1A, 1B, 1C, 1D, and 1E according to the first to sixth embodiments described above can be applied to the image pickup unit 12031. By applying this technology to the image pickup unit 12031, it is possible to obtain a better photographed image, and thus it is possible to reduce driver fatigue.

(Example of application to endoscopic surgery system)
The present technology (the technology according to the present disclosure) may be applied to, for example, an endoscopic surgery system.
FIG. 16 is a diagram showing an example of a schematic configuration of an endoscopic surgery system to which the present technique can be applied.
FIG. 18 shows a surgeon (doctor) 11131 performing surgery on patient 11132 on patient bed 11133 using the endoscopic surgery system 11000. As shown, the endoscopic surgery system 11000 includes an endoscope 11100, other surgical tools 11110 such as an abdominal tube 11111 and an energy treatment tool 11112, and a support arm device 11120 that supports the endoscope 11100. , A cart 11200 equipped with various devices for endoscopic surgery.

The endoscope 11100 is composed of a lens barrel 11101 in which a region having a predetermined length from the tip is inserted into the body cavity of the patient 11132, and a camera head 11102 connected to the base end of the lens barrel 11101. In the illustrated example, the endoscope 11100 configured as a so-called rigid mirror having a rigid barrel 11101 is illustrated, but the endoscope 11100 may be configured as a so-called flexible mirror having a flexible barrel. good.

An opening in which an objective lens is fitted is provided at the tip of the lens barrel 11101. A light source device 11203 is connected to the endoscope 11100, and the light generated by the light source device 11203 is guided to the tip of the lens barrel by a light guide extending inside the lens barrel 11101, and is an objective. It is irradiated toward the observation target in the body cavity of the patient 11132 through the lens. The endoscope 11100 may be a direct endoscope, a perspective mirror, or a side endoscope.

An optical system and an image pickup element are provided inside the camera head 11102, and the reflected light (observation light) from the observation target is focused on the image pickup element by the optical system. The observation light is photoelectrically converted by the image sensor, and an electric signal corresponding to the observation light, that is, an image signal corresponding to the observation image is generated. The image signal is transmitted as RAW data to the camera control unit (CCU: Camera Control Unit) 11201.

The CCU11201 is composed of a CPU (Central Processing Unit), a GPU (Graphics Processing Unit), etc., and comprehensively controls the operations of the endoscope 11100 and the display device 11202. Further, the CCU 11201 receives an image signal from the camera head 11102, and performs various image processing on the image signal for displaying an image based on the image signal, such as development processing (demosaic processing).

The display device 11202 displays an image based on the image signal processed by the CCU 11201 under the control of the CCU 11201.

The light source device 11203 is composed of, for example, a light source such as an LED (Light Emitting Diode), and supplies irradiation light to the endoscope 11100 when photographing an operating part or the like.

The input device 11204 is an input interface for the endoscopic surgery system 11000. The user can input various information and input instructions to the endoscopic surgery system 11000 via the input device 11204. For example, the user inputs an instruction to change the imaging conditions (type of irradiation light, magnification, focal length, etc.) by the endoscope 11100.

The treatment tool control device 11205 controls the drive of the energy treatment tool 11112 for cauterizing, incising, sealing a blood vessel, or the like of a tissue. The pneumoperitoneum device 11206 uses a gas in the pneumoperitoneum tube 11111 to inflate the body cavity of the patient 11132 for the purpose of securing the field of view by the endoscope 11100 and securing the work space of the operator. To send. The recorder 11207 is a device capable of recording various information related to surgery. The printer 11208 is a device capable of printing various information related to surgery in various formats such as texts, images, and graphs.

The light source device 11203 that supplies the irradiation light to the endoscope 11100 when photographing the surgical site can be composed of, for example, an LED, a laser light source, or a white light source composed of a combination thereof. When a white light source is configured by combining RGB laser light sources, the output intensity and output timing of each color (each wavelength) can be controlled with high accuracy. Therefore, the light source device 11203 adjusts the white balance of the captured image. It can be carried out. Further, in this case, the laser light from each of the RGB laser light sources is irradiated to the observation target in a time-divided manner, and the drive of the image sensor of the camera head 11102 is controlled in synchronization with the irradiation timing to support each of RGB. It is also possible to capture the image in a time-divided manner. According to this method, a color image can be obtained without providing a color filter on the image sensor.

Further, the drive of the light source device 11203 may be controlled so as to change the intensity of the output light at predetermined time intervals. By controlling the drive of the image sensor of the camera head 11102 in synchronization with the timing of changing the light intensity to acquire an image in a time-divided manner and synthesizing the image, so-called high dynamic without blackout and overexposure. Range images can be generated.

Further, the light source device 11203 may be configured to be able to supply light in a predetermined wavelength band corresponding to special light observation. In special light observation, for example, by utilizing the wavelength dependence of light absorption in body tissue to irradiate light in a narrow band as compared with the irradiation light (that is, white light) in normal observation, the surface layer of the mucous membrane. So-called narrow band imaging, in which a predetermined tissue such as a blood vessel is photographed with high contrast, is performed. Alternatively, in the special light observation, fluorescence observation may be performed in which an image is obtained by fluorescence generated by irradiating with excitation light. In fluorescence observation, the body tissue is irradiated with excitation light to observe the fluorescence from the body tissue (autofluorescence observation), or a reagent such as indocyanine green (ICG) is locally injected into the body tissue and the body tissue is injected. It is possible to obtain a fluorescence image by irradiating excitation light corresponding to the fluorescence wavelength of the reagent. The light source device 11203 may be configured to be capable of supplying narrow band light and / or excitation light corresponding to such special light observation.

FIG. 19 is a block diagram showing an example of the functional configuration of the camera head 11102 and CCU11201 shown in FIG.

The camera head 11102 includes a lens unit 11401, an imaging unit 11402, a driving unit 11403, a communication unit 11404, and a camera head control unit 11405. CCU11201 has a communication unit 11411, an image processing unit 11412, and a control unit 11413. The camera head 11102 and CCU11201 are communicably connected to each other by a transmission cable 11400.

The lens unit 11401 is an optical system provided at a connection portion with the lens barrel 11101. The observation light taken in from the tip of the lens barrel 11101 is guided to the camera head 11102 and incident on the lens unit 11401. The lens unit 11401 is configured by combining a plurality of lenses including a zoom lens and a focus lens.

The image pickup unit 11402 is composed of an image pickup element. The image sensor constituting the image pickup unit 11402 may be one (so-called single plate type) or a plurality (so-called multi-plate type). When the image pickup unit 11402 is composed of a multi-plate type, for example, each image pickup element may generate an image signal corresponding to each of RGB, and a color image may be obtained by synthesizing them. Alternatively, the image pickup unit 11402 may be configured to have a pair of image pickup elements for acquiring image signals for the right eye and the left eye corresponding to 3D (Dimensional) display, respectively. The 3D display enables the operator 11131 to more accurately grasp the depth of the biological tissue in the surgical site. When the image pickup unit 11402 is composed of a multi-plate type, a plurality of lens units 11401 may be provided corresponding to each image pickup element.

Further, the imaging unit 11402 does not necessarily have to be provided on the camera head 11102. For example, the imaging unit 11402 may be provided inside the lens barrel 11101 immediately after the objective lens.

The drive unit 11403 is composed of an actuator, and the zoom lens and focus lens of the lens unit 11401 are moved by a predetermined distance along the optical axis under the control of the camera head control unit 11405. As a result, the magnification and focus of the image captured by the imaging unit 11402 can be adjusted as appropriate.

The communication unit 11404 is composed of a communication device for transmitting and receiving various information to and from the CCU11201. The communication unit 11404 transmits the image signal obtained from the image pickup unit 11402 as RAW data to the CCU 11201 via the transmission cable 11400.

Further, the communication unit 11404 receives a control signal for controlling the drive of the camera head 11102 from the CCU 11201 and supplies the control signal to the camera head control unit 11405. The control signal includes, for example, information to specify the frame rate of the captured image, information to specify the exposure value at the time of imaging, and / or information to specify the magnification and focus of the captured image, and the like. Contains information about the condition.

The imaging conditions such as the frame rate, exposure value, magnification, and focus may be appropriately specified by the user, or may be automatically set by the control unit 11413 of CCU11201 based on the acquired image signal. good. In the latter case, the so-called AE (Auto Exposure) function, AF (Auto Focus) function, and AWB (Auto White Balance) function are mounted on the endoscope 11100.

The camera head control unit 11405 controls the drive of the camera head 11102 based on the control signal from the CCU 11201 received via the communication unit 11404.

The communication unit 11411 is composed of a communication device for transmitting and receiving various information to and from the camera head 11102. The communication unit 11411 receives an image signal transmitted from the camera head 11102 via the transmission cable 11400.

Further, the communication unit 11411 transmits a control signal for controlling the drive of the camera head 11102 to the camera head 11102. Image signals and control signals can be transmitted by telecommunications, optical communication, or the like.

The image processing unit 11412 performs various image processing on the image signal which is the RAW data transmitted from the camera head 11102.

The control unit 11413 performs various controls related to the imaging of the surgical site and the like by the endoscope 11100 and the display of the captured image obtained by the imaging of the surgical site and the like. For example, the control unit 11413 generates a control signal for controlling the drive of the camera head 11102.

Further, the control unit 11413 causes the display device 11202 to display an image captured by the surgical unit or the like based on the image signal processed by the image processing unit 11412. At this time, the control unit 11413 may recognize various objects in the captured image by using various image recognition techniques. For example, the control unit 11413 detects the shape, color, and the like of the edge of an object included in the captured image to remove surgical tools such as forceps, a specific biological part, bleeding, and mist when using the energy treatment tool 11112. Can be recognized. When displaying the captured image on the display device 11202, the control unit 11413 may superimpose and display various surgical support information on the image of the surgical unit by using the recognition result. By superimposing and displaying the surgical support information and presenting it to the surgeon 11131, it is possible to reduce the burden on the surgeon 11131 and to allow the surgeon 11131 to proceed with the surgery reliably.

The transmission cable 11400 that connects the camera head 11102 and CCU11201 is an electric signal cable that supports electric signal communication, an optical fiber that supports optical communication, or a composite cable thereof.

Here, in the illustrated example, the communication is performed by wire using the transmission cable 11400, but the communication between the camera head 11102 and the CCU11201 may be performed wirelessly.

The above is an example of an endoscopic surgery system to which this technology can be applied. The present technology can be applied to the imaging unit 11402 among the configurations described above. Specifically, the solid-

state image sensors

1, 1A, 1B, 1C, 1D, and 1E according to the first to sixth embodiments described above can be applied to the image pickup unit 10402. By applying this technique to the imaging unit 10402, a clearer surgical site image can be obtained, so that the operator can surely confirm the surgical site.

Although the endoscopic surgery system has been described here as an example, the present technology may be applied to other, for example, a microscopic surgery system.

The present technology may have the following configuration.
(1)
A semiconductor layer provided with a plurality of photoelectric conversion units and
A color filter layer arranged on the light incident surface side of the semiconductor layer and including a color filter unit of two or more colors, and a color filter layer.
An inorganic layer arranged on the light incident surface side of the color filter layer and having a refractive index higher than that of the color filter layer,
Solid-state image sensor.
(2)
The solid-state image sensor according to (1) above, wherein the inorganic layer selectively covers the light incident surface side of the color filter unit of a predetermined color among the color filter units of two or more colors.
(3)
The solid-state image sensor according to (1) above, wherein the inorganic layer covers the light incident surface side of the color filter portions of all colors of the color filter portions of two or more colors.
(4)
The thickness of the inorganic layer differs between the color filter portion of the first color of the two or more color filter portions and the color filter portion of the second color different from the color filter of the first color. The solid-state imaging device according to (1) above.
(5)
The solid-state image sensor according to (1) above, wherein the inorganic layer is also arranged between the color filter units having different colors among the two or more color filter units.
(6)
The solid-state image sensor according to (1) above, wherein the inorganic layer also covers the end side surface of the color filter layer.
(7)
The solid-state image sensor according to any one of (1) to (6) above, wherein the inorganic layer is also arranged on a side of the color filter layer opposite to the light incident surface side.
(8)
The solid-state image sensor according to any one of (1) to (7) above, further comprising a plurality of microlenses arranged on the light incident surface side of the color filter layer.
(9)
The solid-state imaging device according to any one of (1) to (8) above, wherein the inorganic layer is formed of any of an aluminum oxide film, a hafnium oxide film, and a silicon nitride film.
(10)
A color filter film is formed on the semiconductor layer,
An inorganic layer having a refractive index higher than that of the color filter film is formed on the color filter film.
The step of forming an etching mask on the inorganic layer and
The inorganic layer and the color filter film around the etching mask are removed by etching to form a color filter portion whose upper surface is covered with the inorganic layer, and the etching mask is removed by overetching.
A method of manufacturing a solid-state image sensor including the above.
(11)
A semiconductor layer provided with a plurality of photoelectric conversion units and
A color filter layer provided on the light incident surface side of the semiconductor layer and including a color filter unit having two or more colors, and a color filter layer.
An inorganic layer arranged on the light incident surface side of the color filter layer and having a refractive index higher than that of the color filter layer,
An electronic device equipped with a solid-state image sensor.

The scope of the present technology is not limited to the exemplary embodiments illustrated and described, but also includes all embodiments that provide an effect equal to that of the present technology. Furthermore, the scope of the present invention is not limited to the combination of the features of the invention defined by the claims, but may be defined by any desired combination of the specific features of all the disclosed features.

1,1A, 1B, 1C, 1D, 1E ... Solid-state imaging device 2 ... Semiconductor chip 2A ... Pixel array part 2B ... Peripheral part 2C ... Pad arrangement part 3 ... Pixel 4 ... Vertical drive circuit 5 ... Column signal processing circuit 6 ... Horizontal Drive circuit 7 ... Output circuit 8 ... Control circuit 10 ... Pixel drive wiring,
11 ... Vertical signal line 12 ... Horizontal signal line 13 ... Electrode pad 20 ... Semiconductor layer 21 ... n-type well area 22 ... Separation area 23 ... Photoelectric conversion unit 25 ... Flattening film 26 ... Adhesive layer 30 ... Multilayer wiring layer 31 ... Interlayer insulation film 32 ... Wiring 34 ... Support substrate 36 ... Flattening film 37 ... Light-shielding film 38 ... Adhesive film 40 ... Color filter layer 41 ... Red (R) first color filter part 42 ... Green (G) color second Color filter unit 43 ... Blue (B) third

color filter unit

50, 50A, 50B, 50C, 50D, 50E ...

Inorganic layer

51, 52, 53, 54, 55, 57 ... Light transmitting film 59 ... Micro lens

Claims

A semiconductor layer provided with a plurality of photoelectric conversion units and
A color filter layer arranged on the light incident surface side of the semiconductor layer and including a color filter unit of two or more colors, and a color filter layer.
An inorganic layer arranged on the light incident surface side of the color filter layer and having a refractive index higher than that of the color filter layer,
Solid-state image sensor.
The solid-state imaging device according to claim 1, wherein the inorganic layer selectively covers the light incident surface side of the color filter unit of a predetermined color among the color filter units of two or more colors.
The solid-state imaging device according to claim 1, wherein the inorganic layer covers the light incident surface side of the color filter portions of all colors of the color filter portions of two or more colors.
The thickness of the inorganic layer differs between the color filter portion of the first color of the two or more color filter portions and the color filter portion of the second color different from the color filter of the first color. The solid-state imaging device according to claim 1.
The solid-state image sensor according to claim 1, wherein the inorganic layer is also arranged between the color filter units having different colors among the two or more color filter units.
The solid-state image sensor according to claim 1, wherein the inorganic layer also covers the end side surface of the color filter layer.
The solid-state image sensor according to claim 1, wherein the inorganic layer is also arranged on a side opposite to the light incident surface side of the color filter layer.
The solid-state imaging device according to claim 1, further comprising a plurality of microlenses arranged on the light incident surface side of the color filter layer.
The solid-state imaging device according to claim 1, wherein the inorganic layer is formed of any of an aluminum oxide film, a hafnium oxide film, and a silicon nitride film.
A color filter film is formed on the semiconductor layer,
An inorganic layer having a refractive index higher than that of the color filter film is formed on the color filter film.
The step of forming an etching mask on the inorganic layer and
The inorganic layer and the color filter film around the etching mask are removed by etching to form a color filter portion whose upper surface is covered with the inorganic layer, and the etching mask is removed by overetching.
A method of manufacturing a solid-state image sensor including the above.
A semiconductor layer provided with a plurality of photoelectric conversion units and
A color filter layer provided on the light incident surface side of the semiconductor layer and including a color filter unit having two or more colors, and a color filter layer.
An inorganic layer arranged on the light incident surface side of the color filter layer and having a refractive index higher than that of the color filter layer,
An electronic device equipped with a solid-state image sensor.