WO2021184477A1 - Bipv photovoltaic module - Google Patents

Bipv photovoltaic module Download PDF

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Publication number
WO2021184477A1
WO2021184477A1 PCT/CN2020/085310 CN2020085310W WO2021184477A1 WO 2021184477 A1 WO2021184477 A1 WO 2021184477A1 CN 2020085310 W CN2020085310 W CN 2020085310W WO 2021184477 A1 WO2021184477 A1 WO 2021184477A1
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Prior art keywords
power generation
photovoltaic module
layer
bipv photovoltaic
module according
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PCT/CN2020/085310
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French (fr)
Chinese (zh)
Inventor
胡华毅
齐鹏飞
梅芳
黄盛源
陈世强
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中山瑞科新能源有限公司
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Publication of WO2021184477A1 publication Critical patent/WO2021184477A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/048—Encapsulation of modules
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/048—Encapsulation of modules
    • H01L31/049—Protective back sheets
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02A—TECHNOLOGIES FOR ADAPTATION TO CLIMATE CHANGE
    • Y02A30/00—Adapting or protecting infrastructure or their operation
    • Y02A30/60—Planning or developing urban green infrastructure
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B10/00—Integration of renewable energy sources in buildings
    • Y02B10/10—Photovoltaic [PV]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/52—PV systems with concentrators

Definitions

  • the present invention relates to the technical field of solar energy, in particular to BIPV photovoltaic modules.
  • BIPV or BIPV
  • Traditional thin-film power generation technology requires the preparation of a power generation layer on glass with a thickness of 3.2mm or less. According to the requirements of building safety standards, the minimum thickness of laminated glass is 5mm. Therefore, most traditional BIPV products use "5mm+3.2mm” +5mm” three-glass structure, but this structure has the problems of low light transmittance, high processing cost and heavy component weight.
  • the purpose of the present invention is to solve at least one of the technical problems existing in the prior art, and to provide BIPV photovoltaic modules, which can break through the limitation of 3.2mm thickness glass, so as to achieve the effects of improving light transmittance, reducing processing costs, and reducing module weight.
  • the solution adopted by the present invention is a BIPV photovoltaic module: it includes a front light-transmitting board, a power generation layer group, a bus wiring layer, and a supporting backboard that are sequentially stacked from top to bottom, and the front light-transmitting board is set to be super white heat enhanced Glass, the thickness of the front light-transmitting plate and the supporting back plate are both no less than 5 mm, and an encapsulating glue layer for encapsulating the bus wiring layer is provided between the power generation layer group and the supporting back plate.
  • the above solution has at least one of the following technical effects: through the above structure, on the one hand, it meets the standard requirements of building safety, on the other hand, it achieves the effects of improving light transmittance, reducing processing costs, and reducing component weight.
  • the power generation layer group includes a front electrode layer, a solar absorption layer, and a back electrode layer that are sequentially stacked from top to bottom, and the front electrode layer is attached to the front light-transmitting plate.
  • the back electrode layer and the encapsulating adhesive layer jointly cover the bus wiring layer.
  • the power generation layer group is provided with a light transmission gap.
  • the ratio of the light transmission gap to the area of the power generation layer group is 5 to 80%.
  • the solar absorption layer includes at least an amorphous silicon film, a cadmium telluride film, a copper indium gallium selenium film, a crystalline silicon cell, a perovskite film, a dye-sensitized film, and an arsenide film.
  • amorphous silicon film a cadmium telluride film
  • copper indium gallium selenium film a copper indium gallium selenium film
  • a crystalline silicon cell a perovskite film
  • a dye-sensitized film a dye-sensitized film
  • arsenide film arsenide film.
  • gallium thin films and heterojunction batteries One of gallium thin films and heterojunction batteries.
  • the supporting back plate is tempered glass.
  • the bus wiring layer includes a bus bar, and the bus bar is electrically connected to the power generation layer group.
  • the thickness of the encapsulant layer is not less than 1.14 mm.
  • FIG. 1 is a structural diagram of an embodiment of the BIPV photovoltaic module of the present invention.
  • Figure 2 is a structural diagram of a power generation layer group in an embodiment of the BIPV photovoltaic module of the present invention
  • Fig. 3 is a structural diagram of the power generation layer group and the bus wiring layer in the embodiment of the BIPV photovoltaic module of the present invention.
  • terms such as “setup”, “installation”, and “connection” should be understood in a broad sense. For example, they may be directly connected or indirectly connected through an intermediate medium; they may be fixed or It can be a detachable connection, or it can be integrally formed; it can be a mechanical connection; it can be a communication between two components or an interaction relationship between two components. Those skilled in the art can reasonably determine the specific meaning of the above words in the present invention in combination with the specific content of the technical solution.
  • the BIPV photovoltaic module of the embodiment of the present invention includes a front light-transmitting plate 100, a power generation layer group, a bus wiring layer 300, and a supporting back plate 500 that are sequentially stacked from top to bottom.
  • the front light-transmitting plate 100 is set to super Incandescent heat-reinforced glass, the thickness of the front light-transmitting plate 100 and the supporting back plate 500 are both no less than 5mm, and an encapsulating glue layer 400 for encapsulating the bus wiring layer 300 is arranged between the power generation layer group and the supporting back plate 500.
  • the encapsulating glue layer 400 is adhered between the power generation layer group and the support backplane 500, and the encapsulation glue layer 400 separates the power generation layer group and the support backplane 500 by a certain distance to accommodate the bus wiring layer 300, and the encapsulation glue layer 400 faces the bus wiring layer 300. Play a protective role.
  • the supporting back plate 500 is preferably tempered glass, and the bus wiring layer 300 includes bus bars, and the bus bars are electrically connected to the power generation layer group.
  • the power generation layer group includes a front electrode layer 210, a solar absorption layer 220, and a back electrode layer 230 that are sequentially stacked from top to bottom.
  • the front electrode layer 210 is attached to the lower surface of the front light-transmitting plate 100, and the back electrode layer 230 is
  • the packaging glue layer 400 collectively covers the bus wiring layer 300.
  • the thickness of the front light-transmitting plate 100 and the supporting back plate 500 is set to no less than 5mm, which meets the requirements of building safety standards; and the front light-transmitting plate 100 is directly used to eliminate the glass reflection caused by the tape in the traditional structure.
  • the structure also breaks through the limitation of 3.2mm glass, which greatly reduces the risk of component breakage and makes the component higher in strength.
  • the power generation layer group is provided with a light transmission gap 240.
  • the light transmission gap 240 is formed by laser etching on the power generation layer group.
  • the ratio of the light transmission gap to the area of the power generation layer group is 5 to 80%.
  • the solar absorption layer 220 includes at least an amorphous silicon film, a cadmium telluride film, a copper indium gallium selenium film, a crystalline silicon cell, a perovskite film, a dye-sensitized film, a gallium arsenide film, and a heterogeneous film.
  • a kind of junction battery is not limited to an amorphous silicon film, a cadmium telluride film, a copper indium gallium selenium film, a crystalline silicon cell, a perovskite film, a dye-sensitized film, a gallium arsenide film, and a heterogeneous film.
  • the thickness of the packaging adhesive layer 400 is not less than 1.14 mm, so that the bus wiring layer 300 can obtain a better sealing effect.

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photovoltaic Devices (AREA)
  • Hybrid Cells (AREA)

Abstract

A BIPV photovoltaic module, comprising, sequentially arranged in a stacked manner from top to bottom: a front light-transmitting plate (100), a power generation layer group, a bus wiring layer (300) and a supporting back plate (500). The front light-transmitting plate (100) is configured to be ultra-white heat-strengthened glass, the thicknesses of the front light-transmitting plate (100) and the supporting back plate (500) are both not less than 5 mm, and a packaging adhesive layer (400) for packaging the bus wiring layer (300) is arranged between the power generation layer group and the supporting back plate (500). The described structure, on the one hand, meets the standard requirements of construction safety, and on the other hand, achieves the effects of improving light transmittance, reducing processing cost and lightening the weight of the module.

Description

BIPV光伏组件BIPV photovoltaic modules 技术领域Technical field
本发明涉及太阳能技术领域，具体涉及BIPV光伏组件。The present invention relates to the technical field of solar energy, in particular to BIPV photovoltaic modules.
背景技术Background technique
光伏建筑一体化即BIPV，是应用太阳能发电的一种新概念。传统的薄膜发电技术需要在3.2mm以下厚度的玻璃上制备发电层，而根据建筑安全的标准要求，夹块玻璃的厚度最小为5mm，因此，传统的BIPV产品大多数采用了“5mm+3.2mm+5mm”的三玻璃结构，但是，这种结构存在透光率低，加工成本高和组件重量重的问题。BIPV, or BIPV, is a new concept of applying solar power. Traditional thin-film power generation technology requires the preparation of a power generation layer on glass with a thickness of 3.2mm or less. According to the requirements of building safety standards, the minimum thickness of laminated glass is 5mm. Therefore, most traditional BIPV products use "5mm+3.2mm" +5mm" three-glass structure, but this structure has the problems of low light transmittance, high processing cost and heavy component weight.
发明内容Summary of the invention
本发明的目的在于至少解决现有技术中存在的技术问题之一，提供BIPV光伏组件，能够突破3.2mm厚度玻璃的限制，以达到提高透光率，减少加工成本，减轻组件重量的效果。The purpose of the present invention is to solve at least one of the technical problems existing in the prior art, and to provide BIPV photovoltaic modules, which can break through the limitation of 3.2mm thickness glass, so as to achieve the effects of improving light transmittance, reducing processing costs, and reducing module weight.
本发明采用的方案为BIPV光伏组件：，其包括从上至下依次层叠设置的前透光板、发电层组、汇流布线层以及支撑背板，所述前透光板设置为超白热增强玻璃，所述前透光板和所述支撑背板的厚度均不少于5mm，所述发电层组与所述支撑背板之间设有用于封装所述汇流布线层的封装胶层。The solution adopted by the present invention is a BIPV photovoltaic module: it includes a front light-transmitting board, a power generation layer group, a bus wiring layer, and a supporting backboard that are sequentially stacked from top to bottom, and the front light-transmitting board is set to be super white heat enhanced Glass, the thickness of the front light-transmitting plate and the supporting back plate are both no less than 5 mm, and an encapsulating glue layer for encapsulating the bus wiring layer is provided between the power generation layer group and the supporting back plate.
上述方案具有下述至少一个技术效果：通过上述结构，一方面满足了建筑安全的标准要求，另一方面达到了提高透光率，减少加工成本，减轻组件重量的效果。The above solution has at least one of the following technical effects: through the above structure, on the one hand, it meets the standard requirements of building safety, on the other hand, it achieves the effects of improving light transmittance, reducing processing costs, and reducing component weight.
根据本发明所述的BIPV光伏组件，所述发电层组包括 从上至下依次层叠设置的前电极层、太阳能吸收层以及背电极层，所述前电极层附着在所述前透光板的下表面，所述背电极层与所述封装胶层共同包覆所述汇流布线层。According to the BIPV photovoltaic module of the present invention, the power generation layer group includes a front electrode layer, a solar absorption layer, and a back electrode layer that are sequentially stacked from top to bottom, and the front electrode layer is attached to the front light-transmitting plate. On the lower surface, the back electrode layer and the encapsulating adhesive layer jointly cover the bus wiring layer.
根据本发明所述的BIPV光伏组件，所述发电层组设有透光间隙。According to the BIPV photovoltaic module of the present invention, the power generation layer group is provided with a light transmission gap.
根据本发明所述的BIPV光伏组件，所述透光间隙占所述发电层组的面积的比例为5～80％。According to the BIPV photovoltaic module of the present invention, the ratio of the light transmission gap to the area of the power generation layer group is 5 to 80%.
根据本发明所述的BIPV光伏组件，所述太阳能吸收层至少包括非晶硅薄膜、碲化镉薄膜、铜铟镓硒薄膜、晶硅电池片、钙钛矿薄膜、染料敏化薄膜、砷化镓薄膜以及异质结电池中的一种。According to the BIPV photovoltaic module of the present invention, the solar absorption layer includes at least an amorphous silicon film, a cadmium telluride film, a copper indium gallium selenium film, a crystalline silicon cell, a perovskite film, a dye-sensitized film, and an arsenide film. One of gallium thin films and heterojunction batteries.
根据本发明所述的BIPV光伏组件，所述支撑背板为钢化玻璃。According to the BIPV photovoltaic module of the present invention, the supporting back plate is tempered glass.
根据本发明所述的BIPV光伏组件，所述汇流布线层包括汇流条，所述汇流条与所述发电层组电性连接。According to the BIPV photovoltaic module of the present invention, the bus wiring layer includes a bus bar, and the bus bar is electrically connected to the power generation layer group.
根据本发明所述的BIPV光伏组件，所述封装胶层的厚度不少于1.14mm。According to the BIPV photovoltaic module of the present invention, the thickness of the encapsulant layer is not less than 1.14 mm.
附图说明Description of the drawings
下面结合附图和实施例对本发明进一步地说明；The present invention will be further described below with reference to the drawings and embodiments;
图1为本发明BIPV光伏组件实施例的结构图；Figure 1 is a structural diagram of an embodiment of the BIPV photovoltaic module of the present invention;
图2为本发明BIPV光伏组件实施例中的发电层组的结构图；Figure 2 is a structural diagram of a power generation layer group in an embodiment of the BIPV photovoltaic module of the present invention;
图3为本发明BIPV光伏组件实施例中的发电层组和汇流布线层的结构图。Fig. 3 is a structural diagram of the power generation layer group and the bus wiring layer in the embodiment of the BIPV photovoltaic module of the present invention.
附图标记：前透光板100、前电极层210、太阳能吸收层220、背电极层230、透光间隙240、汇流布线层300、 封装胶层400、支撑背板500。Reference signs: front light-transmitting plate 100, front electrode layer 210, solar absorption layer 220, back electrode layer 230, light-transmitting gap 240, bus wiring layer 300, encapsulating glue layer 400, supporting back plate 500.
具体实施方式Detailed ways
本部分将详细描述本发明的具体实施例，本发明之较佳实施例在附图中示出，附图的作用在于用图形补充说明书文字部分的描述，使人能够直观地、形象地理解本发明的每个技术特征和整体技术方案，但其不能理解为对本发明保护范围的限制。This section will describe the specific embodiments of the present invention in detail. The preferred embodiments of the present invention are shown in the accompanying drawings. The function of the accompanying drawings is to supplement the description of the text part of the manual with graphics, so that people can understand the present invention intuitively and vividly. Each technical feature and overall technical solution of the invention cannot be understood as a limitation of the protection scope of the present invention.
在本发明的描述中，需要理解的是，涉及到方位描述，例如上、下等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本发明和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本发明的限制。In the description of the present invention, it should be understood that the orientation description involved, for example, the orientation or position relationship of the upper and lower indicators is based on the orientation or position relationship shown in the drawings, which is only for the convenience of describing the present invention and simplifying the description. , Rather than indicating or implying that the pointed device or element must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation of the present invention.
本发明中，除非另有明确的限定，“设置”、“安装”、“连接”等词语应做广义理解，例如，可以是直接相连，也可以通过中间媒介间接相连；可以是固定连接，也可以是可拆卸连接，还可以是一体成型；可以是机械连接；可以是两个元件内部的连通或两个元件的相互作用关系。所属技术领域技术人员可以结合技术方案的具体内容合理确定上述词语在本发明中的具体含义。In the present invention, unless specifically defined otherwise, terms such as “setup”, “installation”, and “connection” should be understood in a broad sense. For example, they may be directly connected or indirectly connected through an intermediate medium; they may be fixed or It can be a detachable connection, or it can be integrally formed; it can be a mechanical connection; it can be a communication between two components or an interaction relationship between two components. Those skilled in the art can reasonably determine the specific meaning of the above words in the present invention in combination with the specific content of the technical solution.
参照图1，本发明实施例BIPV光伏组件，其包括从上至下依次层叠设置的前透光板100、发电层组、汇流布线层300以及支撑背板500，前透光板100设置为超白热增强玻璃，前透光板100和支撑背板500的厚度均不少于5mm，发电层组与支撑背板500之间设有用于封装汇流布线层300的封装胶层400，封装胶层400粘接在发电层组和支撑背板 500之间，且封装胶层400将发电层组和支撑背板500隔开一定的距离以容纳汇流布线层300，封装胶层400对汇流布线层300起到保护的作用。其中，支撑背板500优选为钢化玻璃，又有汇流布线层300包括汇流条，汇流条与发电层组电性连接。1, the BIPV photovoltaic module of the embodiment of the present invention includes a front light-transmitting plate 100, a power generation layer group, a bus wiring layer 300, and a supporting back plate 500 that are sequentially stacked from top to bottom. The front light-transmitting plate 100 is set to super Incandescent heat-reinforced glass, the thickness of the front light-transmitting plate 100 and the supporting back plate 500 are both no less than 5mm, and an encapsulating glue layer 400 for encapsulating the bus wiring layer 300 is arranged between the power generation layer group and the supporting back plate 500. The encapsulating glue layer 400 is adhered between the power generation layer group and the support backplane 500, and the encapsulation glue layer 400 separates the power generation layer group and the support backplane 500 by a certain distance to accommodate the bus wiring layer 300, and the encapsulation glue layer 400 faces the bus wiring layer 300. Play a protective role. Among them, the supporting back plate 500 is preferably tempered glass, and the bus wiring layer 300 includes bus bars, and the bus bars are electrically connected to the power generation layer group.
具体的，发电层组包括从上至下依次层叠设置的前电极层210、太阳能吸收层220以及背电极层230，前电极层210附着在前透光板100的下表面，背电极层230与封装胶层400共同包覆汇流布线层300。Specifically, the power generation layer group includes a front electrode layer 210, a solar absorption layer 220, and a back electrode layer 230 that are sequentially stacked from top to bottom. The front electrode layer 210 is attached to the lower surface of the front light-transmitting plate 100, and the back electrode layer 230 is The packaging glue layer 400 collectively covers the bus wiring layer 300.
将前透光板100和支撑背板500的厚度设置为不少于5mm，满足了建筑安全的标准要求；且直接使用前透光板100，杜绝了传统结构中夹胶带来的玻璃反射，上述结构还突破了3.2mm玻璃的限制，大大减小组件破碎的风险，使得组件具有更高的强度。The thickness of the front light-transmitting plate 100 and the supporting back plate 500 is set to no less than 5mm, which meets the requirements of building safety standards; and the front light-transmitting plate 100 is directly used to eliminate the glass reflection caused by the tape in the traditional structure. The structure also breaks through the limitation of 3.2mm glass, which greatly reduces the risk of component breakage and makes the component higher in strength.
参照图2和图3，发电层组设有透光间隙240，具体的，透光间隙240由激光在发电层组上刻蚀而成。优选的，透光间隙占发电层组的面积比例为5～80％。2 and 3, the power generation layer group is provided with a light transmission gap 240. Specifically, the light transmission gap 240 is formed by laser etching on the power generation layer group. Preferably, the ratio of the light transmission gap to the area of the power generation layer group is 5 to 80%.
在本实施例中，太阳能吸收层220至少包括非晶硅薄膜、碲化镉薄膜、铜铟镓硒薄膜、晶硅电池片、钙钛矿薄膜、染料敏化薄膜、砷化镓薄膜以及异质结电池中的一种。In this embodiment, the solar absorption layer 220 includes at least an amorphous silicon film, a cadmium telluride film, a copper indium gallium selenium film, a crystalline silicon cell, a perovskite film, a dye-sensitized film, a gallium arsenide film, and a heterogeneous film. A kind of junction battery.
又有，封装胶层400的厚度不少于1.14mm，以使得汇流布线层300得到更好的密封效果。In addition, the thickness of the packaging adhesive layer 400 is not less than 1.14 mm, so that the bus wiring layer 300 can obtain a better sealing effect.
当然，本发明并不局限于上述实施方式，熟悉本领域的技术人员在不违背本发明精神的前提下还可作出等同变形或替换，这些等同的变形和替换均包含在本申请权利要求所限定的范围内。Of course, the present invention is not limited to the above-mentioned embodiments. Those skilled in the art can make equivalent modifications or substitutions without departing from the spirit of the invention. These equivalent modifications and substitutions are all included in the scope of the claims of this application. In the range.

Claims (8)

  1. BIPV光伏组件，其特征在于：包括BIPV photovoltaic modules are characterized by: including
    从上至下依次层叠设置的前透光板、发电层组、汇流布线层以及支撑背板，所述前透光板设置为超白热增强玻璃，所述前透光板和所述支撑背板的厚度均不少于5mm，所述发电层组与所述支撑背板之间设有用于封装所述汇流布线层的封装胶层。The front light-transmitting plate, the power generation layer group, the bus wiring layer, and the supporting back plate are stacked from top to bottom, the front light-transmitting plate is set as ultra-white heat reinforced glass, the front light-transmitting plate and the supporting back The thickness of the board is not less than 5 mm, and an encapsulating glue layer for encapsulating the bus wiring layer is provided between the power generation layer group and the supporting backplane.
  2. 根据权利要求1所述的BIPV光伏组件，其特征在于：The BIPV photovoltaic module according to claim 1, characterized in that:
    所述发电层组包括从上至下依次层叠设置的前电极层、太阳能吸收层以及背电极层，所述前电极层附着在所述前透光板的下表面，所述背电极层与所述封装胶层共同包覆所述汇流布线层。The power generation layer group includes a front electrode layer, a solar absorption layer, and a back electrode layer that are sequentially stacked from top to bottom. The front electrode layer is attached to the lower surface of the front light-transmitting plate. The encapsulating glue layer collectively covers the bus wiring layer.
  3. 根据权利要求1所述的BIPV光伏组件，其特征在于：The BIPV photovoltaic module according to claim 1, characterized in that:
    所述发电层组设有透光间隙。The power generation layer group is provided with light-transmitting gaps.
  4. 根据权利要求3所述的BIPV光伏组件，其特征在于：The BIPV photovoltaic module according to claim 3, characterized in that:
    所述透光间隙占所述发电层组的面积的比例为5～80％。The ratio of the light transmission gap to the area of the power generation layer group is 5 to 80%.
  5. 根据权利要求2所述的BIPV光伏组件，其特征在于：The BIPV photovoltaic module according to claim 2, characterized in that:
    所述太阳能吸收层至少包括非晶硅薄膜、碲化镉薄膜、铜铟镓硒薄膜、晶硅电池片、钙钛矿薄膜、染料敏化薄膜、砷化镓薄膜以及异质结电池中的一种。The solar absorption layer includes at least one of an amorphous silicon film, a cadmium telluride film, a copper indium gallium selenium film, a crystalline silicon cell, a perovskite film, a dye-sensitized film, a gallium arsenide film, and a heterojunction cell kind.
  6. 根据权利要求1所述的BIPV光伏组件，其特征在于：The BIPV photovoltaic module according to claim 1, characterized in that:
    所述支撑背板为钢化玻璃。The supporting back plate is tempered glass.
  7. 根据权利要求1所述的BIPV光伏组件，其特征在于：The BIPV photovoltaic module according to claim 1, characterized in that:
    所述汇流布线层包括汇流条，所述汇流条与所述发电层组电性连接。The bus wiring layer includes a bus bar, and the bus bar is electrically connected to the power generation layer group.
  8. 根据权利要求1所述的BIPV光伏组件，其特征在于：The BIPV photovoltaic module according to claim 1, characterized in that:
    所述封装胶层的厚度不少于1.14mm。The thickness of the packaging adhesive layer is not less than 1.14 mm.
PCT/CN2020/085310 2020-03-19 2020-04-17 Bipv photovoltaic module WO2021184477A1 (en)

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