WO2021182189A1 - Substrate processing method and substrate processing apparatus - Google Patents

Substrate processing method and substrate processing apparatus Download PDF

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Publication number
WO2021182189A1
WO2021182189A1 PCT/JP2021/007986 JP2021007986W WO2021182189A1 WO 2021182189 A1 WO2021182189 A1 WO 2021182189A1 JP 2021007986 W JP2021007986 W JP 2021007986W WO 2021182189 A1 WO2021182189 A1 WO 2021182189A1
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Prior art keywords
gas
film
substrate
plasma
etching
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PCT/JP2021/007986
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French (fr)
Japanese (ja)
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博紀 村上
宗一朗 酒井
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東京エレクトロン株式会社
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Priority to US17/905,438 priority Critical patent/US20230128868A1/en
Priority to KR1020227033739A priority patent/KR20220147661A/en
Publication of WO2021182189A1 publication Critical patent/WO2021182189A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
    • H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
    • H01L21/32137—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas of silicon-containing layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching

Definitions

  • This disclosure relates to a substrate processing method and a substrate processing apparatus.
  • a substrate processing device that etches a silicon-based film formed on a substrate is known.
  • Patent Document 1 describes a method for etching a layer on a substrate in a semiconductor processing chamber, which is a step of introducing a first gas into the chamber, wherein the gas etches the layer. A step of retaining the first gas in the chamber and a step of retaining the first gas in the chamber for a period sufficient to adsorb at least some of the first gas into the layer. A method comprising substantially replacing the first gas with an inert gas, generating a semi-stable gas from the inert gas, and etching the layer with the semi-stable gas. It is disclosed.
  • the present disclosure provides a substrate processing method and a substrate processing apparatus capable of obtaining good etching characteristics.
  • a substrate processing method for etching a substrate to be etched formed on a substrate, a step of preparing the substrate having the film to be etched, and the etching target is a step of supplying an etchant gas and a step of plasma-exciting a reaction gas to expose the substrate, which is repeated a plurality of times.
  • a processing method is provided.
  • the schematic diagram which shows the structural example of the plasma processing apparatus.
  • the flowchart which shows an example of the substrate processing by a plasma processing apparatus.
  • a time chart showing an example of etching processing by a plasma processing apparatus.
  • An example of a graph showing the relationship between the etching temperature and the etching amount for each type of silicon-based film.
  • An example of a graph showing the selection ratio between an amorphous silicon film and another silicon-based film (SiN film, SiO 2 film).
  • FIG. 1 is a schematic view showing a configuration example of the plasma processing apparatus 100.
  • the plasma processing apparatus 100 has a cylindrical processing container 1 with a ceiling whose lower end is opened.
  • the entire processing container 1 is made of, for example, quartz.
  • a ceiling plate 2 made of quartz is provided in the vicinity of the upper end of the processing container 1, and a region below the ceiling plate 2 is sealed.
  • a metal manifold 3 formed in a cylindrical shape is connected to the opening at the lower end of the processing container 1 via a sealing member 4 such as an O-ring.
  • the manifold 3 supports the lower end of the processing container 1, and is a wafer on which a large number (for example, 25 to 150) semiconductor wafers (hereinafter referred to as “board W”) are placed in multiple stages as substrates from below the manifold 3.
  • the boat 5 is inserted into the processing container 1. In this way, a large number of substrates W are housed in the processing container 1 substantially horizontally with an interval along the vertical direction.
  • the wafer boat 5 is made of, for example, quartz.
  • the wafer boat 5 has three rods 6 (two rods are shown in FIG. 1), and a large number of substrates W are supported by grooves (not shown) formed in the rods 6.
  • the wafer boat 5 is placed on the table 8 via a heat insulating cylinder 7 made of quartz.
  • the table 8 is supported on a rotating shaft 10 penetrating a metal (stainless steel) lid 9 that opens and closes the opening at the lower end of the manifold 3.
  • a magnetic fluid seal 11 is provided at the penetrating portion of the rotating shaft 10, and the rotating shaft 10 is hermetically sealed and rotatably supported.
  • a sealing member 12 for maintaining the airtightness in the processing container 1 is provided between the peripheral portion of the lid 9 and the lower end of the manifold 3.
  • the rotating shaft 10 is attached to the tip of an arm 13 supported by an elevating mechanism (not shown) such as a boat elevator, and the wafer boat 5 and the lid 9 move up and down integrally in the processing container 1. On the other hand, it is inserted and removed.
  • the table 8 may be fixedly provided on the lid 9 side so that the substrate W can be processed without rotating the wafer boat 5.
  • the plasma processing apparatus 100 has a gas supply unit 20 that supplies a predetermined gas such as a processing gas or a purge gas into the processing container 1.
  • a gas supply unit 20 that supplies a predetermined gas such as a processing gas or a purge gas into the processing container 1.
  • the gas supply unit 20 has gas supply pipes 21, 22, and 24.
  • the gas supply pipe 21 is made of, for example, quartz, and is made of a quartz pipe that penetrates the side wall of the manifold 3 inward and is bent upward.
  • the gas supply pipe 22 is made of, for example, quartz, penetrates the side wall of the manifold 3 inward, is bent upward, and extends vertically. In the vertical portion of the gas supply pipe 22, a plurality of gas holes 22g are formed at predetermined intervals over a length in the vertical direction corresponding to the wafer support range of the wafer boat 5. Each gas hole 22g discharges gas in the horizontal direction.
  • the gas supply pipe 24 is made of, for example, quartz, and is composed of a short quartz pipe provided so as to penetrate the side wall of the manifold 3.
  • Etchant gas is supplied to the gas supply pipe 21 from the etchant gas supply source 21a via the gas pipe.
  • the gas pipe is provided with a flow rate controller 21b and an on-off valve 21c.
  • the etchant gas from the etchant gas supply source 21a is supplied into the processing container 1 via the gas pipe and the gas supply pipe 21.
  • the etchant gas for example, hydrogen fluoride (HF) can be used.
  • the etchant gas is not limited to this, and hydrogen halides and halogens such as F 2 , Cl 2 , Br 2 , I 2 , HCl, BCl 3 , HBr, HI, NF 3 , ClF 3 , CF 4 and the like are used. Compounds are available.
  • the gas supply pipe 22 is provided with a vertical portion (a vertical portion in which the gas hole 22g is formed) in a plasma generation space described later.
  • a reaction gas containing hydrogen is supplied to the gas supply pipe 22 from the reaction gas supply source 22a via the gas pipe.
  • the gas pipe is provided with a flow rate controller 22b and an on-off valve 22c.
  • nitrogen gas (N 2 ) is supplied to the gas supply pipe 22 from the reaction gas supply source 23a via the gas pipe.
  • the gas pipe is provided with a flow rate controller 23b and an on-off valve 23c.
  • the mixed gas of the reaction gas containing hydrogen and the nitrogen gas from the reaction gas supply sources 22a and 23a is supplied to the plasma generation space via the gas pipe and the gas supply pipe 22, and is converted into plasma in the plasma generation space.
  • the reaction gas containing hydrogen for example, NH 3 gas and H 2 gas can be used.
  • the reaction gas is not limited to this, and a gas containing at least hydrogen (H) or deuterium (D) such as H 2 , N 2 H 4 , C 2 H 4 , NH 3 , D 2 is used. can.
  • Purge gas is supplied to the gas supply pipe 24 from a purge gas supply source (not shown) via a gas pipe.
  • the gas pipe (not shown) is provided with a flow rate controller (not shown) and an on-off valve (not shown).
  • the purge gas from the purge gas supply source is supplied into the processing container 1 via the gas pipe and the gas supply pipe 24.
  • an inert gas such as argon (Ar) or nitrogen (N 2) can be used.
  • the purge gas is supplied from the purge gas supply source to the processing container 1 via the gas pipe and the gas supply pipe 24 has been described, but the present invention is not limited to this, and the purge gas is supplied from any of the gas supply pipes 21 and 22. May be done.
  • a plasma generation mechanism 30 is formed on a part of the side wall of the processing container 1.
  • the plasma generation mechanism 30 plasmaizes the NH 3 gas (or H 2 gas) to generate hydrogen (H) radicals, and plasmaizes the N 2 gas to generate active species for nitriding.
  • the plasma generation mechanism 30 includes a plasma partition wall 32, a pair of plasma electrodes 33 (one is shown in FIG. 1), a feeding line 34, a high frequency power supply 35, and an insulation protective cover 36.
  • the plasma partition wall 32 is airtightly welded to the outer wall of the processing container 1.
  • the plasma partition wall 32 is formed of, for example, quartz.
  • the plasma partition wall 32 has a concave cross section and covers the opening 31 formed in the side wall of the processing container 1.
  • the opening 31 is formed elongated in the vertical direction so as to cover all the substrates W supported by the wafer boat 5 in the vertical direction.
  • a gas supply pipe 22 for discharging a mixed gas of NH 3 gas and N 2 gas is arranged in the inner space defined by the plasma partition wall 32 and communicating with the inside of the processing container 1, that is, the plasma generation space. There is.
  • the gas supply pipe 21 for discharging the etchant gas is provided at a position close to the substrate W along the inner side wall of the processing container 1 outside the plasma generation space.
  • the pair of plasma electrodes 33 (one is shown in FIG. 1) each have an elongated shape, and are arranged to face each other on the outer surfaces of the walls on both sides of the plasma partition wall 32 in the vertical direction.
  • Each plasma electrode 33 is held by, for example, a holding portion (not shown) provided on the side surface of the plasma partition wall 32.
  • a power feeding line 34 is connected to the lower end of each plasma electrode 33.
  • the power supply line 34 electrically connects each plasma electrode 33 and the high frequency power supply 35.
  • one end of the feeding line 34 is connected to the lower end of each plasma electrode 33, and the other end is connected to the high frequency power supply 35.
  • the high-frequency power supply 35 is connected to the lower end of each plasma electrode 33 via a power supply line 34, and supplies high-frequency power of, for example, 13.56 MHz to the pair of plasma electrodes 33.
  • high-frequency power is applied into the plasma generation space defined by the plasma partition wall 32.
  • the NH 3 gas (or H 2 gas) discharged from the gas supply pipe 22 is turned into plasma in the plasma generation space to which high frequency power is applied, and the hydrogen radicals generated by this are converted into plasma through the opening 31 in the processing container 1. It is supplied to the inside of.
  • the N 2 gas supplied from the gas supply pipe 22 is turned into plasma in the plasma generation space to which high frequency power is applied, and the active species for nitriding generated thereby is processed through the opening 31 in the processing container 1. It is supplied to the inside of.
  • the insulation protective cover 36 is attached to the outside of the plasma partition wall 32 so as to cover the plasma partition wall 32.
  • a refrigerant passage (not shown) is provided in the inner portion of the insulation protection cover 36, and the plasma electrode 33 is cooled by flowing a cooled refrigerant such as nitrogen (N 2) gas through the refrigerant passage.
  • a shield (not shown) may be provided between the plasma electrode 33 and the insulation protective cover 36 so as to cover the plasma electrode 33.
  • the shield is formed of a good conductor such as metal and is grounded.
  • An exhaust port 40 for vacuum exhausting the inside of the processing container 1 is provided on the side wall portion of the processing container 1 facing the opening 31.
  • the exhaust port 40 is vertically elongated so as to correspond to the wafer boat 5.
  • An exhaust port cover member 41 formed in a U-shaped cross section is attached to a portion of the processing container 1 corresponding to the exhaust port 40 so as to cover the exhaust port 40.
  • the exhaust port cover member 41 extends upward along the side wall of the processing container 1.
  • An exhaust pipe 42 for exhausting the processing container 1 via the exhaust port 40 is connected to the lower part of the exhaust port cover member 41.
  • An exhaust device 44 including a pressure control valve 43 for controlling the pressure in the processing container 1 and a vacuum pump is connected to the exhaust pipe 42, and the inside of the processing container 1 is exhausted by the exhaust device 44 via the exhaust pipe 42. Will be done.
  • a cylindrical heating mechanism 50 for heating the processing container 1 and the substrate W inside the processing container 1 is provided so as to surround the outer periphery of the processing container 1.
  • the plasma processing device 100 has a control unit 60.
  • the control unit 60 controls the operation of each part of the plasma processing device 100, for example, supply / stop of each gas by opening / closing the on-off valves 21c to 23c, controlling the gas flow rate by the flow rate controllers 21b to 23b, and exhausting by the exhaust device 44. Take control. Further, the control unit 60 controls, for example, on / off of high-frequency power by the high-frequency power supply 35 and control of the temperature of the substrate W by the heating mechanism 50.
  • the control unit 60 may be, for example, a computer or the like. Further, the computer program that operates each part of the plasma processing apparatus 100 is stored in the storage medium.
  • the storage medium may be, for example, a flexible disk, a compact disk, a hard disk, a flash memory, a DVD, or the like.
  • FIG. 2 is a flowchart showing an example of substrate processing by the plasma processing apparatus 100.
  • the plasma processing apparatus 100 etches a silicon-based film as an etching target film formed on the substrate W.
  • step S101 the substrate W having a silicon-based film is prepared. Specifically, the substrate W having a silicon-based film is set on the wafer boat 5. The arm 13 inserts the wafer boat 5 into the processing container 1 from the lower end of the manifold 3. Then, the processing container 1 is made airtight by the lid body 9.
  • step S102 the silicon-based film of the substrate W is etched.
  • FIG. 3 is a time chart showing an example of etching processing by the plasma processing apparatus 100.
  • the etching process S201 for supplying the etchant gas, S202 for purging, S203 for supplying the reaction gas by applying RF power, and S204 for purging are repeated for a predetermined cycle to obtain the etching process.
  • This is a process of alternately supplying reaction gas to etch a silicon-based film formed on the substrate W. Note that FIG. 3 shows only one cycle.
  • N 2 gas is a purge gas from the gas supply pipe 24 is constantly during the etching process (continuously) is supplied.
  • the step S201 of supplying the etchant gas is a step of supplying the etchant gas into the processing container 1.
  • the etchant gas is supplied from the etchant gas supply source 21a through the gas supply pipe 21 into the processing container 1.
  • the etchant gas HF gas
  • the etchant gas applies a fluoride treatment to the surface of the silicon-based film of the substrate W, and the surface of the silicon-based film is brought into a reaction-saturated state of fluoride.
  • the purging step S202 is a step of purging excess etchant gas or the like in the processing container 1.
  • the on-off valve 21c is closed to stop the supply of etchant gas.
  • the purge gas constantly supplied from the gas supply pipe 24 purges the excess etchant gas and the like in the processing container 1.
  • the step S203 of supplying the reaction gas is a step of supplying a mixed gas of NH 3 gas and N 2 gas as the reaction gas.
  • the reaction gas is supplied from the reaction gas supply sources 22a and 23a into the plasma partition wall 32 via the gas supply pipe 22. Further, RF is applied to the plasma electrode 33 by the high frequency power supply 35 to generate plasma in the plasma partition wall 32.
  • Hydrogen (H) radicals and active species of nitriding are generated and supplied into the processing vessel 1 through the opening 31. As a result, the hydrogen (H) radical and the active species of nitriding react with the surface of the fluorinated silicon-based film, so that the surface layer (one layer) of the fluorinated silicon-based film is etched. ..
  • hydrogen (H) radicals and active species of nitriding are supplied to the surface of the fluorinated silicon-based film, and a reaction product containing silicon and fluorine, such as (NH 4 ) 2 SiF 6, is produced. can get.
  • the generated (NH 4 ) 2 SiF 6 is sublimated and exhausted from the inside of the processing container 1 by the exhaust device 44. As a result, the surface of the silicon-based film is etched.
  • the reaction product has a composition containing Si and F, and is volatilized and removed in the present treatment temperature and pressure range.
  • the purging step S204 is a step of purging excess reaction gas, reaction product ((NH 4 ) 2 SiF 6 ), etc. in the processing container 1.
  • the on-off valves 22c and 23c are closed to stop the supply of the reaction gas.
  • the purge gas constantly supplied from the gas supply pipe 24 purges the excess reaction gas, reaction product, and the like in the processing container 1.
  • the silicon-based film formed on the substrate W is etched.
  • a reaction product is produced by fluorinated the film surface with etchant gas and reacting the fluorinated film surface with the plasma of the reaction gas.
  • the silicon-based film is etched by repeating sublimation of the produced reaction product from the substrate W.
  • the silicon-based film can be uniformly (isotropically) etched. That is, even a silicon-based film having a recess having a high aspect ratio can be uniformly etched on the inlet side and the back side of the side wall of the recess.
  • the opening side of the recess, or the top and bottom are preferentially etched. Control is also possible.
  • etching conditions for the silicon-based film using the etchant gas and the reaction gas in step S102 is shown below.
  • RF power 50 to 500 W
  • FIG. 4 is an example of a graph showing the relationship between the etching temperature and the etching amount for each type of silicon-based film.
  • the horizontal axis represents the etching temperature (° C.), and the vertical axis represents the etching amount (A).
  • the result when the etching target is an amorphous silicon film is shown by a solid line
  • the result when the SiN film is used is shown by a broken line
  • the result when the SiO 2 film is used is shown by a alternate long and short dash line.
  • FIG. 5 is an example of a graph showing the selection ratio of etching between an amorphous silicon film and another silicon-based film (SiN film, SiO 2 film).
  • the horizontal axis shows the etching temperature (° C.), and the vertical axis shows the selection ratio.
  • the selective ratio of the amorphous silicon film to the SiN film is indicated by a broken line
  • the selective ratio of the amorphous silicon film to the SiO 2 film is indicated by a dashed line.
  • the amorphous silicon film can be suitably etched. Further, according to the plasma etching process by the plasma processing apparatus 100 according to the present embodiment, the amorphous silicon film can be selectively etched with respect to the SiN film and the SiO 2 film.
  • the silicon film, the polysilicon film, and the crystalline silicon film also have high selectivity for the SiN film and the SiO 2 film. Therefore, according to the plasma etching process by the plasma processing apparatus 100 according to the present embodiment, the silicon film, the polysilicon film, and the crystalline silicon film can be selectively etched with respect to the SiN film and the SiO 2 film.
  • FIG. 6 is an example of a graph showing the relationship between the process temperature and the etching amount (EPC) per cycle.
  • the horizontal axis represents the process temperature (° C.), and the vertical axis represents the etching amount (A / cycle) per cycle.
  • the supply pressure and supply time of HF gas in step 201 are different. Specifically, in Graph 301, it was set to 1 Torr and 10 sec. In the graph 302, it was set to 5 Torr and 30 sec. In graph 303, it was set to 9 Torr and 60 sec. In graph 304, it was set to 27 Torr and 60 sec.
  • the supply flow rate of HF gas was set to 1 slm in common in graphs 301 to 304.
  • the supply flow rate, supply pressure, and supply time of NH 3 gas in step 203 were set to 5 slm, 0.3 Torr, and 10 sec in common with graphs 301 to 304.
  • etching in a wide temperature range is possible by controlling the supply pressure and supply time of the HF gas.
  • the etching temperature can be determined based on the supply pressure and the supply time of the HF gas. In other words, good etching characteristics can be obtained by appropriately selecting the supply pressure and supply time of the HF gas with respect to the desired etching temperature.
  • the etching target film may be a germanium-based film.
  • the germanium-based film includes at least one of an amorphous silicon germanium film, a polycrystalline silicon germanium film, a single crystal silicon germanium film, an amorphous germanium film, a polycrystalline germanium film, and a single crystal germanium film.
  • FIG. 7 is an example of a graph showing the etching amount of the germanium-based film.
  • the horizontal axis shows the ratio of germanium (Ge) in the silicon-germanium-based film (SiGe), and the vertical axis shows the etching amount (A). Further, the result when the process temperature is 75 ° C. is shown by a solid line, and the result when the process temperature is 100 ° C. is shown by a broken line.
  • the germanium-based film has a higher etching amount than the SiN film and the SiO 2 film (see FIG. 4). .. That is, in the plasma etching process by the plasma processing apparatus 100 according to the present embodiment, the germanium-based film also has high selectivity for the SiN film and the SiO 2 film. Therefore, according to the plasma etching process by the plasma processing apparatus 100 according to the present embodiment, the germanium-based film can be selectively etched with respect to the SiN film and the SiO 2 film.
  • the present disclosure is not limited to the above-described embodiment and the like, and within the scope of the gist of the present disclosure described in the claims. Various modifications and improvements are possible.
  • step S101 the step of preparing the substrate W having the silicon-based film (etching target film) has been described as setting the substrate W having the silicon-based film in the processing container 1, but the process is not limited to this. .. It may be a step of forming a silicon-based film on the substrate W in the processing container 1 by the plasma processing apparatus 100.
  • Plasma processing device (board processing device) 1 Processing container 2 Ceiling plate 20 Gas supply section 21, 22, 24 Gas supply pipe 21 Gas supply pipe 22 Gas supply pipe 22 g Gas hole 24 Gas supply pipe 21a Etchant gas supply source 22a, 23a Reaction gas supply source 30 Plasma generation mechanism ( High frequency power supply unit) 44 Exhaust device 50 Heating mechanism 60 Control unit

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Abstract

Provided are a substrate processing method and a substrate processing apparatus with which good etching characteristics can be obtained.　A substrate processing method for etching a film to be etched formed on a substrate, the substrate processing method having a step for readying the substrate having the film to be etched, and a step for etching the film to be etched. In the step for etching the film to be etched, a step for feeding an etchant gas and a step for plasma-exciting a reaction gas and exposing the substrate are repeated a plurality of number of times.

Description

基板処理方法及び基板処理装置Substrate processing method and substrate processing equipment
　本開示は、基板処理方法及び基板処理装置に関する。 This disclosure relates to a substrate processing method and a substrate processing apparatus.
　例えば、基板に形成されたシリコン系膜をエッチングする基板処理装置が知られている。 For example, a substrate processing device that etches a silicon-based film formed on a substrate is known.
　特許文献１には、半導体処理チャンバ内で基板上の層をエッチングするための方法であって、前記チャンバ内に第１のガスを導入するステップであって、前記ガスが、前記層をエッチングするのに適したエッチャントガスであるステップと、前記第１のガスの少なくともいくらかを前記層内に吸着させるのに十分な期間にわたって、前記第１のガスを前記チャンバ内に留めるステップと、前記チャンバ内の前記第１のガスを不活性ガスで実質的に置き換えるステップと、前記不活性ガスから準安定ガスを発生させるステップと、前記準安定ガスで前記層をエッチングするステップと、を備える、方法が開示されている。 Patent Document 1 describes a method for etching a layer on a substrate in a semiconductor processing chamber, which is a step of introducing a first gas into the chamber, wherein the gas etches the layer. A step of retaining the first gas in the chamber and a step of retaining the first gas in the chamber for a period sufficient to adsorb at least some of the first gas into the layer. A method comprising substantially replacing the first gas with an inert gas, generating a semi-stable gas from the inert gas, and etching the layer with the semi-stable gas. It is disclosed.
特開２０１４－５２２１０４号公報Japanese Unexamined Patent Publication No. 2014-522104
　一の側面では、本開示は、良好なエッチング特性が得られる基板処理方法及び基板処理装置を提供する。 On the one hand side, the present disclosure provides a substrate processing method and a substrate processing apparatus capable of obtaining good etching characteristics.
　上記課題を解決するために、一の態様によれば、基板に形成されたエッチング対象膜をエッチングする基板処理方法であって、前記エッチング対象膜を有する前記基板を準備する工程と、前記エッチング対象膜をエッチングする工程と、を有し、前記エッチング対象膜をエッチングする工程は、エッチャントガスを供給する工程と、反応ガスをプラズマ励起して、前記基板を晒す工程と、を複数回繰り返す、基板処理方法が提供される。 In order to solve the above-mentioned problems, according to one aspect, a substrate processing method for etching a substrate to be etched formed on a substrate, a step of preparing the substrate having the film to be etched, and the etching target. A substrate having a step of etching a film and a step of etching the film to be etched is a step of supplying an etchant gas and a step of plasma-exciting a reaction gas to expose the substrate, which is repeated a plurality of times. A processing method is provided.
　一の側面によれば、良好なエッチング特性が得られる基板処理方法及び基板処理装置を提供することができる。 According to one aspect, it is possible to provide a substrate processing method and a substrate processing apparatus capable of obtaining good etching characteristics.
プラズマ処理装置の構成例を示す概略図。The schematic diagram which shows the structural example of the plasma processing apparatus. プラズマ処理装置による基板処理の一例を示すフローチャート。The flowchart which shows an example of the substrate processing by a plasma processing apparatus. プラズマ処理装置によるエッチング処理の一例を示すタイムチャート。A time chart showing an example of etching processing by a plasma processing apparatus. シリコン系膜の膜種ごとにおけるエッチング温度とエッチング量との関係を示すグラフの一例。An example of a graph showing the relationship between the etching temperature and the etching amount for each type of silicon-based film. アモルファスシリコン膜と他のシリコン系膜（ＳｉＮ膜、ＳｉＯ２膜）との選択比を示すグラフの一例。An example of a graph showing the selection ratio between an amorphous silicon film and another silicon-based film (SiN film, SiO 2 film). プロセス温度と１サイクル当りのエッチング量との関係を示すグラフの一例。An example of a graph showing the relationship between the process temperature and the etching amount per cycle. ゲルマニウム系膜のエッチング量を示すグラフの一例。An example of a graph showing the etching amount of a germanium-based film.
　以下、図面を参照して本開示を実施するための形態について説明する。各図面において、同一構成部分には同一符号を付し、重複した説明を省略する場合がある。 Hereinafter, a mode for carrying out the present disclosure will be described with reference to the drawings. In each drawing, the same components may be designated by the same reference numerals and duplicate description may be omitted.
〔基板処理装置〕
　本実施形態に係るプラズマ処理装置（基板処理装置）１００について、図１を用いて説明する。図１は、プラズマ処理装置１００の構成例を示す概略図である。 [Board processing equipment]
The plasma processing apparatus (board processing apparatus) 100 according to the present embodiment will be described with reference to FIG. FIG. 1 is a schematic view showing a configuration example of the plasma processing apparatus 100.
　プラズマ処理装置１００は、下端が開口された有天井の円筒体状の処理容器１を有する。処理容器１の全体は、例えば石英により形成されている。処理容器１内の上端近傍には、石英により形成された天井板２が設けられており、天井板２の下側の領域が封止されている。処理容器１の下端の開口には、円筒体状に成形された金属製のマニホールド３がＯリング等のシール部材４を介して連結されている。 The plasma processing apparatus 100 has a cylindrical processing container 1 with a ceiling whose lower end is opened. The entire processing container 1 is made of, for example, quartz. A ceiling plate 2 made of quartz is provided in the vicinity of the upper end of the processing container 1, and a region below the ceiling plate 2 is sealed. A metal manifold 3 formed in a cylindrical shape is connected to the opening at the lower end of the processing container 1 via a sealing member 4 such as an O-ring.
　マニホールド３は、処理容器１の下端を支持しており、マニホールド３の下方から基板として多数枚（例えば２５～１５０枚）の半導体ウエハ（以下「基板Ｗ」という。）を多段に載置したウエハボート５が処理容器１内に挿入される。このように処理容器１内には、上下方向に沿って間隔を有して多数枚の基板Ｗが略水平に収容される。ウエハボート５は、例えば石英により形成されている。ウエハボート５は、３本のロッド６を有し（図１では２本を図示する。）、ロッド６に形成された溝（図示せず）により多数枚の基板Ｗが支持される。 The manifold 3 supports the lower end of the processing container 1, and is a wafer on which a large number (for example, 25 to 150) semiconductor wafers (hereinafter referred to as “board W”) are placed in multiple stages as substrates from below the manifold 3. The boat 5 is inserted into the processing container 1. In this way, a large number of substrates W are housed in the processing container 1 substantially horizontally with an interval along the vertical direction. The wafer boat 5 is made of, for example, quartz. The wafer boat 5 has three rods 6 (two rods are shown in FIG. 1), and a large number of substrates W are supported by grooves (not shown) formed in the rods 6.
　ウエハボート５は、石英により形成された保温筒７を介してテーブル８上に載置されている。テーブル８は、マニホールド３の下端の開口を開閉する金属（ステンレス）製の蓋体９を貫通する回転軸１０上に支持される。 The wafer boat 5 is placed on the table 8 via a heat insulating cylinder 7 made of quartz. The table 8 is supported on a rotating shaft 10 penetrating a metal (stainless steel) lid 9 that opens and closes the opening at the lower end of the manifold 3.
　回転軸１０の貫通部には、磁性流体シール１１が設けられており、回転軸１０を気密に封止し、且つ回転可能に支持している。蓋体９の周辺部とマニホールド３の下端との間には、処理容器１内の気密性を保持するためのシール部材１２が設けられている。 A magnetic fluid seal 11 is provided at the penetrating portion of the rotating shaft 10, and the rotating shaft 10 is hermetically sealed and rotatably supported. A sealing member 12 for maintaining the airtightness in the processing container 1 is provided between the peripheral portion of the lid 9 and the lower end of the manifold 3.
　回転軸１０は、例えばボートエレベータ等の昇降機構（図示せず）に支持されたアーム１３の先端に取り付けられており、ウエハボート５と蓋体９とは一体として昇降し、処理容器１内に対して挿脱される。なお、テーブル８を蓋体９側へ固定して設け、ウエハボート５を回転させることなく基板Ｗの処理を行うようにしてもよい。 The rotating shaft 10 is attached to the tip of an arm 13 supported by an elevating mechanism (not shown) such as a boat elevator, and the wafer boat 5 and the lid 9 move up and down integrally in the processing container 1. On the other hand, it is inserted and removed. The table 8 may be fixedly provided on the lid 9 side so that the substrate W can be processed without rotating the wafer boat 5.
　また、プラズマ処理装置１００は、処理容器１内へ処理ガス、パージガス等の所定のガスを供給するガス供給部２０を有する。 Further, the plasma processing apparatus 100 has a gas supply unit 20 that supplies a predetermined gas such as a processing gas or a purge gas into the processing container 1.
　ガス供給部２０は、ガス供給管２１，２２，２４を有する。ガス供給管２１は、例えば石英により形成されており、マニホールド３の側壁を内側へ貫通して上方へ屈曲された石英管からなる。ガス供給管２２は、例えば石英により形成されており、マニホールド３の側壁を内側へ貫通して上方へ屈曲されて垂直に延びる。ガス供給管２２の垂直部分には、ウエハボート５のウエハ支持範囲に対応する上下方向の長さに亘って、複数のガス孔２２ｇが所定間隔で形成されている。各ガス孔２２ｇは、水平方向にガスを吐出する。ガス供給管２４は、例えば石英により形成されており、マニホールド３の側壁を貫通して設けられた短い石英管からなる。 The gas supply unit 20 has gas supply pipes 21, 22, and 24. The gas supply pipe 21 is made of, for example, quartz, and is made of a quartz pipe that penetrates the side wall of the manifold 3 inward and is bent upward. The gas supply pipe 22 is made of, for example, quartz, penetrates the side wall of the manifold 3 inward, is bent upward, and extends vertically. In the vertical portion of the gas supply pipe 22, a plurality of gas holes 22g are formed at predetermined intervals over a length in the vertical direction corresponding to the wafer support range of the wafer boat 5. Each gas hole 22g discharges gas in the horizontal direction. The gas supply pipe 24 is made of, for example, quartz, and is composed of a short quartz pipe provided so as to penetrate the side wall of the manifold 3.
　ガス供給管２１には、ガス配管を介してエッチャントガス供給源２１ａからエッチャントガスが供給される。ガス配管には、流量制御器２１ｂ及び開閉弁２１ｃが設けられている。これにより、エッチャントガス供給源２１ａからのエッチャントガスは、ガス配管及びガス供給管２１を介して処理容器１内に供給される。エッチャントガスとしては、例えばフッ化水素（ＨＦ）を利用できる。なお、エッチャントガスは、これに限られるものではなく、Ｆ２、Ｃｌ２、Ｂｒ２、Ｉ２、ＨＣｌ、ＢＣｌ３、ＨＢｒ、ＨＩ、ＮＦ３、ＣｌＦ３、ＣＦ４等のハロゲン化水素及びハロゲン化合物を利用できる。 Etchant gas is supplied to the gas supply pipe 21 from the etchant gas supply source 21a via the gas pipe. The gas pipe is provided with a flow rate controller 21b and an on-off valve 21c. As a result, the etchant gas from the etchant gas supply source 21a is supplied into the processing container 1 via the gas pipe and the gas supply pipe 21. As the etchant gas, for example, hydrogen fluoride (HF) can be used. The etchant gas is not limited to this, and hydrogen halides and halogens such as F 2 , Cl 2 , Br 2 , I 2 , HCl, BCl 3 , HBr, HI, NF 3 , ClF 3 , CF 4 and the like are used. Compounds are available.
　ガス供給管２２は、その垂直部分（ガス孔２２ｇが形成される垂直部分）が後述するプラズマ生成空間に設けられている。ガス供給管２２には、ガス配管を介して反応ガス供給源２２ａから水素を含む反応ガスが供給される。ガス配管には、流量制御器２２ｂ及び開閉弁２２ｃが設けられている。また、ガス供給管２２には、ガス配管を介して反応ガス供給源２３ａから窒素ガス（Ｎ２）が供給される。ガス配管には、流量制御器２３ｂ及び開閉弁２３ｃが設けられている。これにより、反応ガス供給源２２ａ，２３ａからの水素を含む反応ガスと窒素ガスとの混合ガスは、ガス配管及びガス供給管２２を介してプラズマ生成空間に供給され、プラズマ生成空間においてプラズマ化されて処理容器１内に供給される。水素を含む反応ガスとしては、例えばＮＨ３ガス、Ｈ２ガスを利用できる。なお、反応ガスは、これに限られるものではなく、Ｈ２、Ｎ２Ｈ４、Ｃ２Ｈ４、ＮＨ３、Ｄ２等の少なくとも水素（Ｈ）もしくは重水素（Ｄ）を含むガスを利用できる。 The gas supply pipe 22 is provided with a vertical portion (a vertical portion in which the gas hole 22g is formed) in a plasma generation space described later. A reaction gas containing hydrogen is supplied to the gas supply pipe 22 from the reaction gas supply source 22a via the gas pipe. The gas pipe is provided with a flow rate controller 22b and an on-off valve 22c. Further, nitrogen gas (N 2 ) is supplied to the gas supply pipe 22 from the reaction gas supply source 23a via the gas pipe. The gas pipe is provided with a flow rate controller 23b and an on-off valve 23c. As a result, the mixed gas of the reaction gas containing hydrogen and the nitrogen gas from the reaction gas supply sources 22a and 23a is supplied to the plasma generation space via the gas pipe and the gas supply pipe 22, and is converted into plasma in the plasma generation space. Is supplied into the processing container 1. As the reaction gas containing hydrogen, for example, NH 3 gas and H 2 gas can be used. The reaction gas is not limited to this, and a gas containing at least hydrogen (H) or deuterium (D) such as H 2 , N 2 H 4 , C 2 H 4 , NH 3 , D 2 is used. can.
　ガス供給管２４には、ガス配管を介してパージガス供給源（図示せず）からパージガスが供給される。ガス配管（図示せず）には、流量制御器（図示せず）及び開閉弁（図示せず）が設けられている。これにより、パージガス供給源からのパージガスは、ガス配管及びガス供給管２４を介して処理容器１内に供給される。パージガスとしては、例えばアルゴン（Ａｒ）、窒素（Ｎ２）等の不活性ガスを利用できる。なお、パージガスがパージガス供給源からガス配管及びガス供給管２４を介して処理容器１内に供給される場合を説明したが、これに限定されず、パージガスはガス供給管２１、２２のいずれから供給されてもよい。 Purge gas is supplied to the gas supply pipe 24 from a purge gas supply source (not shown) via a gas pipe. The gas pipe (not shown) is provided with a flow rate controller (not shown) and an on-off valve (not shown). As a result, the purge gas from the purge gas supply source is supplied into the processing container 1 via the gas pipe and the gas supply pipe 24. As the purge gas, for example, an inert gas such as argon (Ar) or nitrogen (N 2) can be used. The case where the purge gas is supplied from the purge gas supply source to the processing container 1 via the gas pipe and the gas supply pipe 24 has been described, but the present invention is not limited to this, and the purge gas is supplied from any of the gas supply pipes 21 and 22. May be done.
　処理容器１の側壁の一部には、プラズマ生成機構３０が形成されている。プラズマ生成機構３０は、ＮＨ３ガス（またはＨ２ガス）をプラズマ化して水素（Ｈ）ラジカルを生成し、Ｎ２ガスをプラズマ化して窒化のための活性種を生成する。 A plasma generation mechanism 30 is formed on a part of the side wall of the processing container 1. The plasma generation mechanism 30 plasmaizes the NH 3 gas (or H 2 gas) to generate hydrogen (H) radicals, and plasmaizes the N 2 gas to generate active species for nitriding.
　プラズマ生成機構３０は、プラズマ区画壁３２と、一対のプラズマ電極３３（図１では１つを図示する。）と、給電ライン３４と、高周波電源３５と、絶縁保護カバー３６と、を備える。 The plasma generation mechanism 30 includes a plasma partition wall 32, a pair of plasma electrodes 33 (one is shown in FIG. 1), a feeding line 34, a high frequency power supply 35, and an insulation protective cover 36.
　プラズマ区画壁３２は、処理容器１の外壁に気密に溶接されている。プラズマ区画壁３２は、例えば石英により形成される。プラズマ区画壁３２は断面凹状をなし、処理容器１の側壁に形成された開口３１を覆う。開口３１は、ウエハボート５に支持されている全ての基板Ｗを上下方向にカバーできるように、上下方向に細長く形成される。プラズマ区画壁３２により規定されると共に処理容器１内と連通する内側空間、すなわち、プラズマ生成空間には、ＮＨ３ガスとＮ２ガスの混合ガスを吐出するためのガス供給管２２が配置されている。なお、エッチャントガスを吐出するためのガス供給管２１は、プラズマ生成空間の外の処理容器１の内側壁に沿った基板Ｗに近い位置に設けられている。 The plasma partition wall 32 is airtightly welded to the outer wall of the processing container 1. The plasma partition wall 32 is formed of, for example, quartz. The plasma partition wall 32 has a concave cross section and covers the opening 31 formed in the side wall of the processing container 1. The opening 31 is formed elongated in the vertical direction so as to cover all the substrates W supported by the wafer boat 5 in the vertical direction. A gas supply pipe 22 for discharging a mixed gas of NH 3 gas and N 2 gas is arranged in the inner space defined by the plasma partition wall 32 and communicating with the inside of the processing container 1, that is, the plasma generation space. There is. The gas supply pipe 21 for discharging the etchant gas is provided at a position close to the substrate W along the inner side wall of the processing container 1 outside the plasma generation space.
　一対のプラズマ電極３３（図１では１つを図示する。）は、それぞれ細長い形状を有し、プラズマ区画壁３２の両側の壁の外面に、上下方向に沿って対向配置されている。各プラズマ電極３３は、例えばプラズマ区画壁３２の側面に設けられた保持部（図示せず）によって保持されている。各プラズマ電極３３の下端には、給電ライン３４が接続されている。 The pair of plasma electrodes 33 (one is shown in FIG. 1) each have an elongated shape, and are arranged to face each other on the outer surfaces of the walls on both sides of the plasma partition wall 32 in the vertical direction. Each plasma electrode 33 is held by, for example, a holding portion (not shown) provided on the side surface of the plasma partition wall 32. A power feeding line 34 is connected to the lower end of each plasma electrode 33.
　給電ライン３４は、各プラズマ電極３３と高周波電源３５とを電気的に接続する。図示の例では、給電ライン３４は、一端が各プラズマ電極３３の下端に接続されており、他端が高周波電源３５と接続されている。 The power supply line 34 electrically connects each plasma electrode 33 and the high frequency power supply 35. In the illustrated example, one end of the feeding line 34 is connected to the lower end of each plasma electrode 33, and the other end is connected to the high frequency power supply 35.
　高周波電源３５は、各プラズマ電極３３の下端に給電ライン３４を介して接続され、一対のプラズマ電極３３に例えば１３．５６ＭＨｚの高周波電力を供給する。これにより、プラズマ区画壁３２により規定されたプラズマ生成空間内に、高周波電力が印加される。ガス供給管２２から吐出されたＮＨ３ガス（またはＨ２ガス）は、高周波電力が印加されたプラズマ生成空間内においてプラズマ化され、これにより生成された水素ラジカルが開口３１を介して処理容器１の内部へと供給される。また、ガス供給管２２から供給されたＮ２ガスは、高周波電力が印加されたプラズマ生成空間内においてプラズマ化され、これにより生成された窒化のための活性種が開口３１を介して処理容器１の内部へと供給される。 The high-frequency power supply 35 is connected to the lower end of each plasma electrode 33 via a power supply line 34, and supplies high-frequency power of, for example, 13.56 MHz to the pair of plasma electrodes 33. As a result, high-frequency power is applied into the plasma generation space defined by the plasma partition wall 32. The NH 3 gas (or H 2 gas) discharged from the gas supply pipe 22 is turned into plasma in the plasma generation space to which high frequency power is applied, and the hydrogen radicals generated by this are converted into plasma through the opening 31 in the processing container 1. It is supplied to the inside of. Further, the N 2 gas supplied from the gas supply pipe 22 is turned into plasma in the plasma generation space to which high frequency power is applied, and the active species for nitriding generated thereby is processed through the opening 31 in the processing container 1. It is supplied to the inside of.
　絶縁保護カバー３６は、プラズマ区画壁３２の外側に、該プラズマ区画壁３２を覆うようにして取り付けられている。絶縁保護カバー３６の内側部分には、冷媒通路（図示せず）が設けられており、冷媒通路に冷却された窒素（Ｎ２）ガス等の冷媒を流すことによりプラズマ電極３３が冷却される。また、プラズマ電極３３と絶縁保護カバー３６との間に、プラズマ電極３３を覆うようにシールド（図示せず）が設けられていてもよい。シールドは、例えば金属等の良導体により形成され、接地される。 The insulation protective cover 36 is attached to the outside of the plasma partition wall 32 so as to cover the plasma partition wall 32. A refrigerant passage (not shown) is provided in the inner portion of the insulation protection cover 36, and the plasma electrode 33 is cooled by flowing a cooled refrigerant such as nitrogen (N 2) gas through the refrigerant passage. Further, a shield (not shown) may be provided between the plasma electrode 33 and the insulation protective cover 36 so as to cover the plasma electrode 33. The shield is formed of a good conductor such as metal and is grounded.
　開口３１に対向する処理容器１の側壁部分には、処理容器１内を真空排気するための排気口４０が設けられている。排気口４０は、ウエハボート５に対応して上下に細長く形成されている。処理容器１の排気口４０に対応する部分には、排気口４０を覆うように断面Ｕ字状に成形された排気口カバー部材４１が取り付けられている。排気口カバー部材４１は、処理容器１の側壁に沿って上方に延びている。排気口カバー部材４１の下部には、排気口４０を介して処理容器１を排気するための排気管４２が接続されている。排気管４２には、処理容器１内の圧力を制御する圧力制御バルブ４３及び真空ポンプ等を含む排気装置４４が接続されており、排気装置４４により排気管４２を介して処理容器１内が排気される。 An exhaust port 40 for vacuum exhausting the inside of the processing container 1 is provided on the side wall portion of the processing container 1 facing the opening 31. The exhaust port 40 is vertically elongated so as to correspond to the wafer boat 5. An exhaust port cover member 41 formed in a U-shaped cross section is attached to a portion of the processing container 1 corresponding to the exhaust port 40 so as to cover the exhaust port 40. The exhaust port cover member 41 extends upward along the side wall of the processing container 1. An exhaust pipe 42 for exhausting the processing container 1 via the exhaust port 40 is connected to the lower part of the exhaust port cover member 41. An exhaust device 44 including a pressure control valve 43 for controlling the pressure in the processing container 1 and a vacuum pump is connected to the exhaust pipe 42, and the inside of the processing container 1 is exhausted by the exhaust device 44 via the exhaust pipe 42. Will be done.
　また、処理容器１の外周を囲むようにして処理容器１及びその内部の基板Ｗを加熱する円筒体状の加熱機構５０が設けられている。 Further, a cylindrical heating mechanism 50 for heating the processing container 1 and the substrate W inside the processing container 1 is provided so as to surround the outer periphery of the processing container 1.
　また、プラズマ処理装置１００は、制御部６０を有する。制御部６０は、例えばプラズマ処理装置１００の各部の動作の制御、例えば開閉弁２１ｃ～２３ｃの開閉による各ガスの供給・停止、流量制御器２１ｂ～２３ｂによるガス流量の制御、排気装置４４による排気制御を行う。また、制御部６０は、例えば高周波電源３５による高周波電力のオン・オフ制御、加熱機構５０による基板Ｗの温度の制御を行う。 Further, the plasma processing device 100 has a control unit 60. The control unit 60 controls the operation of each part of the plasma processing device 100, for example, supply / stop of each gas by opening / closing the on-off valves 21c to 23c, controlling the gas flow rate by the flow rate controllers 21b to 23b, and exhausting by the exhaust device 44. Take control. Further, the control unit 60 controls, for example, on / off of high-frequency power by the high-frequency power supply 35 and control of the temperature of the substrate W by the heating mechanism 50.
　制御部６０は、例えばコンピュータ等であってよい。また、プラズマ処理装置１００の各部の動作を行うコンピュータのプログラムは、記憶媒体に記憶されている。記憶媒体は、例えばフレキシブルディスク、コンパクトディスク、ハードディスク、フラッシュメモリ、ＤＶＤ等であってよい。 The control unit 60 may be, for example, a computer or the like. Further, the computer program that operates each part of the plasma processing apparatus 100 is stored in the storage medium. The storage medium may be, for example, a flexible disk, a compact disk, a hard disk, a flash memory, a DVD, or the like.
　次に、図１に示すプラズマ処理装置１００による基板処理の一例について説明する。図２は、プラズマ処理装置１００による基板処理の一例を示すフローチャートである。プラズマ処理装置１００は、基板Ｗに形成されたエッチング対象膜としてのシリコン系膜をエッチングする。 Next, an example of substrate processing by the plasma processing apparatus 100 shown in FIG. 1 will be described. FIG. 2 is a flowchart showing an example of substrate processing by the plasma processing apparatus 100. The plasma processing apparatus 100 etches a silicon-based film as an etching target film formed on the substrate W.
　ステップＳ１０１において、シリコン系膜を有する基板Ｗを準備する。具体的には、シリコン系膜を有する基板Ｗがウエハボート５にセットされる。アーム１３は、マニホールド３の下端からウエハボート５を処理容器１内に挿入する。そして、蓋体９によって、処理容器１は気密にされる。 In step S101, the substrate W having a silicon-based film is prepared. Specifically, the substrate W having a silicon-based film is set on the wafer boat 5. The arm 13 inserts the wafer boat 5 into the processing container 1 from the lower end of the manifold 3. Then, the processing container 1 is made airtight by the lid body 9.
　ステップＳ１０２において、基板Ｗのシリコン系膜をエッチングする。 In step S102, the silicon-based film of the substrate W is etched.
　プラズマ処理装置１００によるエッチング処理について、図３を用いて説明する。図３は、プラズマ処理装置１００によるエッチング処理の一例を示すタイムチャートである。 The etching process by the plasma processing apparatus 100 will be described with reference to FIG. FIG. 3 is a time chart showing an example of etching processing by the plasma processing apparatus 100.
　図３に示されるエッチングプロセスは、エッチャントガスを供給する工程Ｓ２０１、パージする工程Ｓ２０２、ＲＦパワーを印加して反応ガスを供給する工程Ｓ２０３、及び、パージする工程Ｓ２０４を所定サイクル繰り返し、エッチャントガスと反応ガスを交互に供給して基板Ｗ上に形成されたシリコン系膜をエッチングするプロセスである。なお、図３では、１サイクルのみを示す。なお、工程Ｓ２０１～Ｓ２０４において、ガス供給管２４からパージガスであるＮ２ガスがエッチングプロセス中に常時（連続して）供給されている。 In the etching process shown in FIG. 3, the etching process S201 for supplying the etchant gas, S202 for purging, S203 for supplying the reaction gas by applying RF power, and S204 for purging are repeated for a predetermined cycle to obtain the etching process. This is a process of alternately supplying reaction gas to etch a silicon-based film formed on the substrate W. Note that FIG. 3 shows only one cycle. In the step S201 ~ S204, N 2 gas is a purge gas from the gas supply pipe 24 is constantly during the etching process (continuously) is supplied.
　エッチャントガスを供給する工程Ｓ２０１は、エッチャントガスを処理容器１内に供給する工程である。エッチャントガスを供給する工程Ｓ２０１では、まず、開閉弁２１ｃを開くことにより、エッチャントガス供給源２１ａからガス供給管２１を経てエッチャントガスを処理容器１内に供給する。これにより、エッチャントガス（ＨＦガス）が基板Ｗのシリコン系膜の表面にフッ化処理を施し、シリコン系膜の表面をフッ化の反応飽和状態とする。 The step S201 of supplying the etchant gas is a step of supplying the etchant gas into the processing container 1. In the step S201 of supplying the etchant gas, first, by opening the on-off valve 21c, the etchant gas is supplied from the etchant gas supply source 21a through the gas supply pipe 21 into the processing container 1. As a result, the etchant gas (HF gas) applies a fluoride treatment to the surface of the silicon-based film of the substrate W, and the surface of the silicon-based film is brought into a reaction-saturated state of fluoride.
　パージする工程Ｓ２０２は、処理容器１内の余剰のエッチャントガス等をパージする工程である。パージする工程Ｓ２０２では、開閉弁２１ｃを閉じてエッチャントガスの供給を停止する。これにより、ガス供給管２４から常時供給されているパージガスが処理容器１内の余剰のエッチャントガス等をパージする。 The purging step S202 is a step of purging excess etchant gas or the like in the processing container 1. In the purging step S202, the on-off valve 21c is closed to stop the supply of etchant gas. As a result, the purge gas constantly supplied from the gas supply pipe 24 purges the excess etchant gas and the like in the processing container 1.
　反応ガスを供給する工程Ｓ２０３は、反応ガスとしてのＮＨ３ガス及びＮ２ガスの混合ガスを供給する工程である。反応ガスを供給する工程Ｓ２０３では、開閉弁２２ｃ，２３ｃを開くことにより、反応ガス供給源２２ａ，２３ａからガス供給管２２を経て反応ガスをプラズマ区画壁３２内に供給する。また、高周波電源３５により、プラズマ電極３３にＲＦを印加して、プラズマ区画壁３２内にプラズマを生成する。水素（Ｈ）ラジカル及び窒化の活性種を生成し、開口３１から処理容器１内に供給する。これにより、水素（Ｈ）ラジカル及び窒化の活性種がフッ化処理されたシリコン系膜の表面と反応することで、フッ化されたシリコン系膜の表面の層（１層分）がエッチングされる。 The step S203 of supplying the reaction gas is a step of supplying a mixed gas of NH 3 gas and N 2 gas as the reaction gas. In the step S203 of supplying the reaction gas, by opening the on-off valves 22c and 23c, the reaction gas is supplied from the reaction gas supply sources 22a and 23a into the plasma partition wall 32 via the gas supply pipe 22. Further, RF is applied to the plasma electrode 33 by the high frequency power supply 35 to generate plasma in the plasma partition wall 32. Hydrogen (H) radicals and active species of nitriding are generated and supplied into the processing vessel 1 through the opening 31. As a result, the hydrogen (H) radical and the active species of nitriding react with the surface of the fluorinated silicon-based film, so that the surface layer (one layer) of the fluorinated silicon-based film is etched. ..
　具体的には、フッ化処理されたシリコン系膜の表面に水素（Ｈ）ラジカル及び窒化の活性種が供給され、例えば（ＮＨ４）２ＳｉＦ６のようなシリコンとフッ素を含む反応生成物が得られる。生成された（ＮＨ４）２ＳｉＦ６は昇華して、排気装置４４により処理容器１内から排気される。これにより、シリコン系膜の表面がエッチングされる。反応生成物はＳｉとＦを含む組成であり、本処理温度・圧力帯においては揮発・除去されるものである。 Specifically, hydrogen (H) radicals and active species of nitriding are supplied to the surface of the fluorinated silicon-based film, and a reaction product containing silicon and fluorine, such as (NH 4 ) 2 SiF 6, is produced. can get. The generated (NH 4 ) 2 SiF 6 is sublimated and exhausted from the inside of the processing container 1 by the exhaust device 44. As a result, the surface of the silicon-based film is etched. The reaction product has a composition containing Si and F, and is volatilized and removed in the present treatment temperature and pressure range.
　パージする工程Ｓ２０４は、処理容器１内の余剰の反応ガスや反応生成物（（ＮＨ４）２ＳｉＦ６）等をパージする工程である。パージする工程Ｓ２０４では、開閉弁２２ｃ，２３ｃを閉じて反応ガスの供給を停止する。これにより、ガス供給管２４から常時供給されているパージガスが処理容器１内の余剰の反応ガスや反応生成物等をパージする。 The purging step S204 is a step of purging excess reaction gas, reaction product ((NH 4 ) 2 SiF 6 ), etc. in the processing container 1. In the purging step S204, the on-off valves 22c and 23c are closed to stop the supply of the reaction gas. As a result, the purge gas constantly supplied from the gas supply pipe 24 purges the excess reaction gas, reaction product, and the like in the processing container 1.
　以上のサイクルを繰り返すことで、基板Ｗに形成されたシリコン系膜をエッチングする。 By repeating the above cycle, the silicon-based film formed on the substrate W is etched.
　本実施形態に係るプラズマ処理装置１００によるプラズマエッチング処理では、エッチャントガスによる膜表面のフッ化処理と、フッ化処理された膜表面と反応ガスのプラズマを反応させることによって反応生成物を生成し、生成された反応生成物を基板Ｗから昇華させることを繰り返して、シリコン系膜をエッチングする。これにより、シリコン系膜を均一に（等方的に）エッチングすることができる。即ち、高アスペクト比の凹部を有するシリコン系膜であっても、凹部の側壁の入口側と奥側で均一にエッチングすることができる。その一方で、均一なフッ化処理の後、プラズマによる反応ガスの活性度や活性種の引き込みを深さ方向において制御することで、凹部の開口部側、もしくは上部と底部を優先的にエッチングする制御も可能である。 In the plasma etching process by the plasma processing apparatus 100 according to the present embodiment, a reaction product is produced by fluorinated the film surface with etchant gas and reacting the fluorinated film surface with the plasma of the reaction gas. The silicon-based film is etched by repeating sublimation of the produced reaction product from the substrate W. As a result, the silicon-based film can be uniformly (isotropically) etched. That is, even a silicon-based film having a recess having a high aspect ratio can be uniformly etched on the inlet side and the back side of the side wall of the recess. On the other hand, after uniform fluorination treatment, by controlling the activity of the reaction gas by plasma and the attraction of active species in the depth direction, the opening side of the recess, or the top and bottom are preferentially etched. Control is also possible.
　ここで、ステップＳ１０２におけるエッチャントガスと反応ガスを用いたシリコン系膜のエッチング条件の好ましい範囲を以下に示す。
温度：２５～４００℃
圧力：０．１～５０．０Ｔｏｒｒ
ＨＦガス流量：１００～５０００ｓｃｃｍ
ＮＨ３ガス流量：１０００～１００００ｓｃｃｍ
Ｎ２ガス流量：５０～１００００ｓｃｃｍ
工程Ｓ２０１時間：５．０～１８０秒
工程Ｓ２０２時間：５．０～６０秒
工程Ｓ２０３時間：５．０～３００秒
工程Ｓ２０４時間：５．０～６０秒
ＲＦパワー：５０～５００Ｗ Here, a preferable range of etching conditions for the silicon-based film using the etchant gas and the reaction gas in step S102 is shown below.
Temperature: 25-400 ° C
Pressure: 0.1-50.0 Torr
HF gas flow rate: 100-5000 sccm
NH3 gas flow rate: 1000-10000 sccm
N2 gas flow rate: 50 to 10000 sccm
Process S201 time: 5.0 to 180 seconds Process S202 time: 5.0 to 60 seconds Process S203 time: 5.0 to 300 seconds Process S204 time: 5.0 to 60 seconds RF power: 50 to 500 W
　図４は、シリコン系膜の膜種ごとにおけるエッチング温度とエッチング量との関係を示すグラフの一例である。横軸は、エッチング温度（℃）を示し、縦軸は、エッチング量（Ａ）を示す。また、エッチング対象をアモルファスシリコン膜とした場合の結果を実線で示し、ＳｉＮ膜とした場合の結果を破線で示し、ＳｉＯ２膜とした場合の結果を一点鎖線で示す。 FIG. 4 is an example of a graph showing the relationship between the etching temperature and the etching amount for each type of silicon-based film. The horizontal axis represents the etching temperature (° C.), and the vertical axis represents the etching amount (A). Further, the result when the etching target is an amorphous silicon film is shown by a solid line, the result when the SiN film is used is shown by a broken line, and the result when the SiO 2 film is used is shown by a alternate long and short dash line.
　図５は、アモルファスシリコン膜と他のシリコン系膜（ＳｉＮ膜、ＳｉＯ２膜）とのエッチングの選択比を示すグラフの一例である。横軸は、エッチング温度（℃）を示し、縦軸は、選択比を示す。また、ＳｉＮ膜に対するアモルファスシリコン膜の選択比を破線で示し、ＳｉＯ２膜に対するアモルファスシリコン膜の選択比を一点鎖線で示す。 FIG. 5 is an example of a graph showing the selection ratio of etching between an amorphous silicon film and another silicon-based film (SiN film, SiO 2 film). The horizontal axis shows the etching temperature (° C.), and the vertical axis shows the selection ratio. Further, the selective ratio of the amorphous silicon film to the SiN film is indicated by a broken line, and the selective ratio of the amorphous silicon film to the SiO 2 film is indicated by a dashed line.
　図４及び図５に示すように、本実施形態に係るプラズマ処理装置１００によるプラズマエッチング処理によれば、アモルファスシリコン膜を好適にエッチングすることができる。また、本実施形態に係るプラズマ処理装置１００によるプラズマエッチング処理によれば、ＳｉＮ膜やＳｉＯ２膜に対してアモルファスシリコン膜を選択的にエッチングすることができる。 As shown in FIGS. 4 and 5, according to the plasma etching process by the plasma processing apparatus 100 according to the present embodiment, the amorphous silicon film can be suitably etched. Further, according to the plasma etching process by the plasma processing apparatus 100 according to the present embodiment, the amorphous silicon film can be selectively etched with respect to the SiN film and the SiO 2 film.
　なお、本実施形態に係るプラズマ処理装置１００によるプラズマエッチング処理では、シリコン膜、ポリシリコン膜や結晶シリコン膜についても同様に、ＳｉＮ膜やＳｉＯ２膜に対して高い選択性を有している。このため、本実施形態に係るプラズマ処理装置１００によるプラズマエッチング処理によれば、ＳｉＮ膜やＳｉＯ２膜に対してシリコン膜、ポリシリコン膜や結晶シリコン膜を選択的にエッチングすることができる。 In the plasma etching process by the plasma processing apparatus 100 according to the present embodiment, the silicon film, the polysilicon film, and the crystalline silicon film also have high selectivity for the SiN film and the SiO 2 film. Therefore, according to the plasma etching process by the plasma processing apparatus 100 according to the present embodiment, the silicon film, the polysilicon film, and the crystalline silicon film can be selectively etched with respect to the SiN film and the SiO 2 film.
　図６は、プロセス温度と１サイクル当りのエッチング量（ＥＰＣ）との関係を示すグラフの一例である。横軸は、プロセス温度（℃）を示し、縦軸は、１サイクル当りのエッチング量（Ａ／ｃｙｃｌｅ）を示す。 FIG. 6 is an example of a graph showing the relationship between the process temperature and the etching amount (EPC) per cycle. The horizontal axis represents the process temperature (° C.), and the vertical axis represents the etching amount (A / cycle) per cycle.
　また、グラフ３０１～３０４では、工程２０１（図３参照）におけるＨＦガスの供給圧力と供給時間が異なっている。具体的には、グラフ３０１では、１Ｔｏｒｒ、１０ｓｅｃとした。グラフ３０２では、５Ｔｏｒｒ、３０ｓｅｃとした。グラフ３０３では、９Ｔｏｒｒ、６０ｓｅｃとした。グラフ３０４では、２７Ｔｏｒｒ、６０ｓｅｃとした。 Further, in graphs 301 to 304, the supply pressure and supply time of HF gas in step 201 (see FIG. 3) are different. Specifically, in Graph 301, it was set to 1 Torr and 10 sec. In the graph 302, it was set to 5 Torr and 30 sec. In graph 303, it was set to 9 Torr and 60 sec. In graph 304, it was set to 27 Torr and 60 sec.
　なお、ＨＦガスの供給流量は、グラフ３０１～３０４で共通して１ｓｌｍとした。工程２０３（図３参照）におけるＮＨ３ガスの供給流量、供給圧力、供給時間は、グラフ３０１～３０４で共通して、５ｓｌｍ、０．３Ｔｏｒｒ、１０ｓｅｃとした。 The supply flow rate of HF gas was set to 1 slm in common in graphs 301 to 304. The supply flow rate, supply pressure, and supply time of NH 3 gas in step 203 (see FIG. 3) were set to 5 slm, 0.3 Torr, and 10 sec in common with graphs 301 to 304.
　図６に示すように、本実施形態に係るプラズマ処理装置１００によるプラズマエッチング処理では、ＨＦガスの供給圧力及び供給時間を制御することで、広範囲な温度域でのエッチングが可能となる。 As shown in FIG. 6, in the plasma etching process by the plasma processing apparatus 100 according to the present embodiment, etching in a wide temperature range is possible by controlling the supply pressure and supply time of the HF gas.
　この様に、本実施形態に係るプラズマ処理装置１００によるプラズマエッチング処理では、ＨＦガスの供給圧力と供給時間とに基づいて、エッチング温度を決定することができる。換言すれば、所望のエッチング温度に対して、ＨＦガスの供給圧力と供給時間を適宜選択することにより、良好なエッチング特性が得られる。 As described above, in the plasma etching process by the plasma processing apparatus 100 according to the present embodiment, the etching temperature can be determined based on the supply pressure and the supply time of the HF gas. In other words, good etching characteristics can be obtained by appropriately selecting the supply pressure and supply time of the HF gas with respect to the desired etching temperature.
　なお、４００℃付近では、領域３０５に示すように、１サイクル当りのエッチング量の増大が見られた。これは、ＨＦの熱的活性が増大したことによるサーマルエッチング成分が重畳したことによる。 At around 400 ° C, an increase in the etching amount per cycle was observed as shown in region 305. This is due to the superposition of thermal etching components due to the increased thermal activity of HF.
　また、本実施形態に係るプラズマ処理装置１００によるプラズマエッチング処理において、エッチング対象膜は、ゲルマニウム系膜であってもよい。ここで、ゲルマニウム系膜は、アモルファスシリコンゲルマニウム膜、多結晶シリコンゲルマニウム膜、単結晶シリコンゲルマニウム膜、アモルファスゲルマニウム膜、多結晶ゲルマニウム膜、単結晶ゲルマニウム膜のうち、少なくとも何れか一つを含む。 Further, in the plasma etching process by the plasma processing apparatus 100 according to the present embodiment, the etching target film may be a germanium-based film. Here, the germanium-based film includes at least one of an amorphous silicon germanium film, a polycrystalline silicon germanium film, a single crystal silicon germanium film, an amorphous germanium film, a polycrystalline germanium film, and a single crystal germanium film.
　図７は、ゲルマニウム系膜のエッチング量を示すグラフの一例である。横軸は、シリコンゲルマニウム系膜（ＳｉＧｅ）におけるゲルマニウム（Ｇｅ）の率を示し、縦軸は、エッチング量（Ａ）を示す。また、プロセス温度を７５℃とした場合の結果を実線で示し、１００℃とした場合の結果を破線で示す。 FIG. 7 is an example of a graph showing the etching amount of the germanium-based film. The horizontal axis shows the ratio of germanium (Ge) in the silicon-germanium-based film (SiGe), and the vertical axis shows the etching amount (A). Further, the result when the process temperature is 75 ° C. is shown by a solid line, and the result when the process temperature is 100 ° C. is shown by a broken line.
　ここで、図４及び図７を対比して示すように、ゲルマニウム系膜（図７参照）は、ＳｉＮ膜やＳｉＯ２膜（図４参照）と比較して、高いエッチング量を有している。即ち、本実施形態に係るプラズマ処理装置１００によるプラズマエッチング処理では、ゲルマニウム系膜についても同様に、ＳｉＮ膜やＳｉＯ２膜に対して高い選択性を有している。このため、本実施形態に係るプラズマ処理装置１００によるプラズマエッチング処理によれば、ＳｉＮ膜やＳｉＯ２膜に対してゲルマニウム系膜を選択的にエッチングすることができる。 Here, as shown in comparison with FIGS. 4 and 7, the germanium-based film (see FIG. 7) has a higher etching amount than the SiN film and the SiO 2 film (see FIG. 4). .. That is, in the plasma etching process by the plasma processing apparatus 100 according to the present embodiment, the germanium-based film also has high selectivity for the SiN film and the SiO 2 film. Therefore, according to the plasma etching process by the plasma processing apparatus 100 according to the present embodiment, the germanium-based film can be selectively etched with respect to the SiN film and the SiO 2 film.
　以上、プラズマ処理装置１００による本実施形態のエッチング方法について説明したが、本開示は上記実施形態等に限定されるものではなく、特許請求の範囲に記載された本開示の要旨の範囲内において、種々の変形、改良が可能である。 Although the etching method of the present embodiment by the plasma processing apparatus 100 has been described above, the present disclosure is not limited to the above-described embodiment and the like, and within the scope of the gist of the present disclosure described in the claims. Various modifications and improvements are possible.
　ステップＳ１０１において、シリコン系膜（エッチング対象膜）を有する基板Ｗを準備する工程は、シリコン系膜を有する基板Ｗを処理容器１内にセットするものとして説明したが、これに限られるものではない。プラズマ処理装置１００で処理容器１内の基板Ｗにシリコン系膜を成膜する工程であってもよい。 In step S101, the step of preparing the substrate W having the silicon-based film (etching target film) has been described as setting the substrate W having the silicon-based film in the processing container 1, but the process is not limited to this. .. It may be a step of forming a silicon-based film on the substrate W in the processing container 1 by the plasma processing apparatus 100.
　尚、本願は、２０２０年３月１１日に出願した日本国特許出願２０２０－４２１７９号に基づく優先権を主張するものであり、これらの日本国特許出願の全内容を本願に参照により援用する。 Note that this application claims priority based on Japanese Patent Application No. 2020-42179 filed on March 11, 2020, and the entire contents of these Japanese patent applications are incorporated herein by reference.
Ｗ　　　　　基板
１００　　　プラズマ処理装置（基板処理装置）
１　　　　　処理容器
２　　　　　天井板
２０　　　　ガス供給部
２１，２２，２４　ガス供給管
２１　　　　ガス供給管
２２　　　　ガス供給管
２２ｇ　　　ガス孔
２４　　　　ガス供給管
２１ａ　　　エッチャントガス供給源
２２ａ，２３ａ　　　反応ガス供給源
３０　　　　プラズマ生成機構（高周波電力供給部）
４４　　　　排気装置
５０　　　　加熱機構
６０　　　　制御部 W Substrate 100 Plasma processing device (board processing device)
1 Processing container 2 Ceiling plate 20 Gas supply section 21, 22, 24 Gas supply pipe 21 Gas supply pipe 22 Gas supply pipe 22 g Gas hole 24 Gas supply pipe 21a Etchant gas supply source 22a, 23a Reaction gas supply source 30 Plasma generation mechanism ( High frequency power supply unit)
44 Exhaust device 50 Heating mechanism 60 Control unit

Claims (8)

  1. 　基板に形成されたエッチング対象膜をエッチングする基板処理方法であって、
    　前記エッチング対象膜を有する前記基板を準備する工程と、
    　前記エッチング対象膜をエッチングする工程と、を有し、
    　前記エッチング対象膜をエッチングする工程は、
    　エッチャントガスを供給する工程と、
    　反応ガスをプラズマ励起して、前記基板を晒す工程と、を複数回繰り返す、基板処理方法。     A substrate processing method for etching a film to be etched formed on a substrate.
    The step of preparing the substrate having the etching target film and
    It has a step of etching the film to be etched.
    The step of etching the film to be etched is
    The process of supplying etchant gas and
    A substrate processing method in which a step of plasma-exciting a reaction gas to expose the substrate is repeated a plurality of times.
  2. 　前記エッチャントガスは、ハロゲン化水素を含む、
    請求項１に記載の基板処理方法。     The etchant gas contains hydrogen halide,
    The substrate processing method according to claim 1.
  3. 　前記反応ガスは、Ｈを含むガスである、
    請求項１または請求項２に記載の基板処理方法。     The reaction gas is a gas containing H.
    The substrate processing method according to claim 1 or 2.
  4. 　前記反応ガスは、
    　アンモニアガスまたは水素ガスと、窒素ガスと、の混合ガスである、
    請求項３に記載の基板処理方法。     The reaction gas is
    A mixed gas of ammonia gas or hydrogen gas and nitrogen gas,
    The substrate processing method according to claim 3.
  5. 　前記エッチング対象膜は、シリコン系膜を含み、
    　シリコン膜、アモルファスシリコン膜、ポリシリコン膜、結晶シリコン膜のうち、少なくとも何れか一つを含む、
    請求項１乃至請求項４のいずれか１項に記載の基板処理方法。     The etching target film includes a silicon-based film and contains a silicon-based film.
    Includes at least one of a silicon film, an amorphous silicon film, a polysilicon film, and a crystalline silicon film.
    The substrate processing method according to any one of claims 1 to 4.
  6. 　前記エッチング対象膜は、ゲルマニウム系膜を含み、
    　アモルファスシリコンゲルマニウム膜、多結晶シリコンゲルマニウム膜、単結晶シリコンゲルマニウム膜、アモルファスゲルマニウム膜、多結晶ゲルマニウム膜、単結晶ゲルマニウム膜のうち、少なくとも何れか一つを含む、
    請求項５に記載の基板処理方法。     The etching target film contains a germanium-based film and contains a germanium-based film.
    Includes at least one of amorphous silicon germanium film, polycrystalline silicon germanium film, single crystal silicon germanium film, amorphous germanium film, polycrystalline germanium film, and single crystal germanium film.
    The substrate processing method according to claim 5.
  7. 　前記エッチャントガスを供給する工程における前記エッチャントガスの供給圧力と、前記エッチャントガスの供給時間とに基づいて、エッチング温度を決定する、
    請求項１乃至請求項６のいずれか１項に記載の基板処理方法。     The etching temperature is determined based on the supply pressure of the etchant gas in the step of supplying the etchant gas and the supply time of the etchant gas.
    The substrate processing method according to any one of claims 1 to 6.
  8. 　基板を収容する処理容器と、
    　前記処理容器にガスを供給するガス供給部と、
    　高周波電力を印加してプラズマ励起する高周波電力供給部と、
    　制御部と、を備え、
    　前記制御部は、
    　前記ガス供給部から供給されたエッチャントガスを前記処理容器に供給する工程と、
    　前記ガス供給部から供給された反応ガスをプラズマ励起して、前記基板を晒す工程と、を複数回繰り返す、基板処理装置。     A processing container for accommodating the substrate and
    A gas supply unit that supplies gas to the processing container and
    A high-frequency power supply unit that applies high-frequency power to perform plasma excitation, and
    With a control unit
    The control unit
    A step of supplying the etchant gas supplied from the gas supply unit to the processing container, and
    A substrate processing apparatus that repeats the steps of plasma-exciting the reaction gas supplied from the gas supply unit to expose the substrate a plurality of times.
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