WO2021149870A1 - Capteur à structure bidimensionnelle utilisant du graphène fluoré - Google Patents

Capteur à structure bidimensionnelle utilisant du graphène fluoré Download PDF

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Publication number
WO2021149870A1
WO2021149870A1 PCT/KR2020/004710 KR2020004710W WO2021149870A1 WO 2021149870 A1 WO2021149870 A1 WO 2021149870A1 KR 2020004710 W KR2020004710 W KR 2020004710W WO 2021149870 A1 WO2021149870 A1 WO 2021149870A1
Authority
WO
WIPO (PCT)
Prior art keywords
region
transistor
dimensional structure
fluorine
channel region
Prior art date
Application number
PCT/KR2020/004710
Other languages
English (en)
Korean (ko)
Inventor
송광섭
조승민
김기수
Original Assignee
금오공과대학교 산학협력단
(주)엠씨케이테크
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 금오공과대학교 산학협력단, (주)엠씨케이테크 filed Critical 금오공과대학교 산학협력단
Publication of WO2021149870A1 publication Critical patent/WO2021149870A1/fr

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
    • G01N27/403—Cells and electrode assemblies
    • G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
    • G01N27/28—Electrolytic cell components
    • G01N27/30—Electrodes, e.g. test electrodes; Half-cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
    • H01L29/1606—Graphene

Abstract

L'invention concerne une technologie associée à un capteur à structure bidimensionnelle utilisant du graphène fluoré et, plus spécifiquement, l'invention concerne un capteur à structure bidimensionnelle utilisant un transistor à effet de champ sensible aux ions et une électrode de référence en graphène fluoré.
PCT/KR2020/004710 2020-01-21 2020-04-08 Capteur à structure bidimensionnelle utilisant du graphène fluoré WO2021149870A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020200007906A KR102363387B1 (ko) 2020-01-21 2020-01-21 불소 처리 그래핀을 이용한 2차원 구조 센서
KR10-2020-0007906 2020-01-21

Publications (1)

Publication Number Publication Date
WO2021149870A1 true WO2021149870A1 (fr) 2021-07-29

Family

ID=76993044

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2020/004710 WO2021149870A1 (fr) 2020-01-21 2020-04-08 Capteur à structure bidimensionnelle utilisant du graphène fluoré

Country Status (2)

Country Link
KR (1) KR102363387B1 (fr)
WO (1) WO2021149870A1 (fr)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5821600A (en) * 1994-12-20 1998-10-13 Stmicroelectronics, Inc. Isolation by active transistors with grounded gates
KR20050096162A (ko) * 2003-01-28 2005-10-05 코닌클리케 필립스 일렉트로닉스 엔.브이. 전자 디바이스
KR101606148B1 (ko) * 2014-10-29 2016-03-25 서울대학교 산학협력단 불소 원자가 결합된 그래핀 산화물을 포함하는 가스센서 및 이의 제조방법
KR101720281B1 (ko) * 2016-02-05 2017-04-10 주식회사 아이엠헬스케어 나노 와이어를 감지 채널로 이용하고 멤브레인을 유동 채널로 이용하는 ｆｅｔ 기반 바이오 센서, 및 이를 이용한 검출 방법
KR20190074652A (ko) * 2017-12-20 2019-06-28 금오공과대학교 산학협력단 그래핀 기준전극 제조 방법

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100718144B1 (ko) * 2006-01-09 2007-05-14 삼성전자주식회사 이온 물질 검출용 ｆｅｔ 기반 센서, 그를 포함하는 이온물질 검출 장치 및 그를 이용한 이온 물질 검출 방법
KR101921627B1 (ko) 2017-06-16 2018-11-26 한국과학기술연구원 전계 효과 트랜지스터, 이를 구비한 바이오 센서, 전계 효과 트랜지스터의 제조방법 및 바이오 센서의 제조방법

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5821600A (en) * 1994-12-20 1998-10-13 Stmicroelectronics, Inc. Isolation by active transistors with grounded gates
KR20050096162A (ko) * 2003-01-28 2005-10-05 코닌클리케 필립스 일렉트로닉스 엔.브이. 전자 디바이스
KR101606148B1 (ko) * 2014-10-29 2016-03-25 서울대학교 산학협력단 불소 원자가 결합된 그래핀 산화물을 포함하는 가스센서 및 이의 제조방법
KR101720281B1 (ko) * 2016-02-05 2017-04-10 주식회사 아이엠헬스케어 나노 와이어를 감지 채널로 이용하고 멤브레인을 유동 채널로 이용하는 ｆｅｔ 기반 바이오 센서, 및 이를 이용한 검출 방법
KR20190074652A (ko) * 2017-12-20 2019-06-28 금오공과대학교 산학협력단 그래핀 기준전극 제조 방법

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
OH, HONG GI ET AL.: "Detection of pH variation 2D sensing structure", PROCEEDINGS OF THE INSTITUTE OF ELECTRONICS AND INFORMATION ENEINEERS CONFERENCE, vol. 1, no. 11, June 2019 (2019-06-01), pages 986 *

Also Published As

Publication number Publication date
KR20210094308A (ko) 2021-07-29
KR102363387B1 (ko) 2022-02-15

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