WO2021149586A1 - Magnetic device - Google Patents

Abstract

According to one embodiment, this magnetic device includes: a first element; a first transistor of a first conductivity type; a second transistor of a second conductivity type; and first to third wiring lines. The first element includes a first conductive member and a first laminate. The first conductive member includes a first section, a second section, and a third section between the first section and the second section. The first laminate includes a first magnetic layer. The first transistor includes a first end, a first other end, and a first gate. The second transistor includes a second end, a second other end, and a second gate. The first other end is electrically connected to the first section. The second other end is electrically connected to the first magnetic layer. The first wiring line is electrically connected to the second section. The second wiring line is electrically connected to the first gate and the second gate. The third wiring line is electrically connected to the first end and the second end. Provided is a magnetic device which enables an increase in density.

Description

Magnetic device

Embodiments of the present invention relate to magnetic devices.

A magnetic device using a magnetic layer is applied to a storage device or an arithmetic unit. Higher densities are desired in magnetic devices.

Japanese Patent No. 6545853

An embodiment of the present invention provides a magnetic device capable of increasing the density.

According to the embodiment of the present invention, the magnetic device includes a first element, a first conductive type first transistor, a second conductive type second transistor, a first wiring, a second wiring, and a third. Including wiring. The first element includes a first conductive member and a first laminated body. The first conductive member includes a first portion, a second portion, and a third portion between the first portion and the second portion. The first laminated body includes a first magnetic layer and a first opposed magnetic layer provided between the third portion and the first magnetic layer. The first transistor includes a first end, a first other end and a first gate. The second transistor includes a second end, a second other end and a second gate. The first other end is electrically connected to the first portion. The second other end is electrically connected to the first magnetic layer. The first wiring is electrically connected to the second portion. The second wiring is electrically connected to the first gate and the second gate. The third wiring is electrically connected to the first end and the second end.

FIG. 1 is a schematic perspective view illustrating a magnetic device according to the first embodiment. 2 (a) and 2 (b) are schematic views illustrating the magnetic device according to the first embodiment. 3 (a) to 3 (c) are schematic views illustrating the magnetic device according to the first embodiment. FIG. 4 is a schematic perspective view illustrating the magnetic device according to the first embodiment. 5 (a) and 5 (b) are schematic views illustrating the magnetic device according to the first embodiment. FIG. 6 is a schematic view illustrating the magnetic device according to the first embodiment. FIG. 7 is a schematic diagram illustrating the magnetic device according to the first embodiment. FIG. 8 is a schematic view illustrating the magnetic device according to the first embodiment. FIG. 9 is a schematic perspective view illustrating the magnetic device according to the second embodiment. 10 (a) and 10 (b) are schematic views illustrating the magnetic device according to the second embodiment. 11 (a) and 11 (b) are schematic cross-sectional views illustrating the magnetic device according to the second embodiment. FIG. 12 is a schematic cross-sectional view illustrating the magnetic device according to the second embodiment. FIG. 13 is a schematic perspective view illustrating the magnetic device according to the second embodiment. 14 (a) and 14 (b) are schematic views illustrating the magnetic device according to the third embodiment. 15 (a) to 15 (e) are schematic transmission plan views illustrating the magnetic device according to the third embodiment. 16 (a) to 16 (f) are schematic transmission plan views illustrating the magnetic device according to the third embodiment. 17 (a) to 17 (c) are schematic transmission plan views illustrating the magnetic device according to the third embodiment. FIG. 18 is a schematic perspective view illustrating the magnetic device according to the third embodiment. FIG. 19 is a schematic perspective view illustrating the magnetic device according to the third embodiment. FIG. 20 is a schematic perspective view illustrating the magnetic device according to the fourth embodiment. FIG. 21 is a schematic plan view illustrating the magnetic device according to the fourth embodiment. FIG. 22 is a schematic plan view illustrating the magnetic device according to the fourth embodiment. FIG. 23 is a schematic plan view illustrating the magnetic device according to the fourth embodiment. FIG. 24 is a schematic plan view illustrating the magnetic device according to the fourth embodiment. FIG. 25 is a schematic perspective view illustrating the magnetic device according to the fourth embodiment. FIG. 26 is a schematic plan view illustrating the magnetic device according to the fourth embodiment. FIG. 27 is a schematic plan view illustrating the magnetic device according to the fourth embodiment. FIG. 28 is a schematic plan view illustrating the magnetic device according to the fourth embodiment. FIG. 29 is a schematic plan view illustrating the magnetic device according to the fourth embodiment. FIG. 30 is a schematic plan view illustrating the magnetic device according to the fourth embodiment. FIG. 31 is a schematic perspective view illustrating the magnetic device according to the fifth embodiment. FIG. 32 is a schematic perspective view illustrating the magnetic device according to the sixth embodiment. FIG. 33 is a schematic plan view illustrating the magnetic device according to the sixth embodiment. FIG. 34 is a schematic plan view illustrating the magnetic device according to the sixth embodiment. FIG. 35 is a schematic plan view illustrating the magnetic device according to the sixth embodiment. FIG. 36 is a schematic plan view illustrating the magnetic device according to the sixth embodiment. FIG. 37 is a schematic plan view illustrating the magnetic device according to the sixth embodiment. FIG. 38 is a schematic view illustrating the magnetic device according to the seventh embodiment. 39 (a) and 39 (b) are schematic views illustrating the magnetic device according to the seventh embodiment. FIG. 40 is a schematic view illustrating the magnetic device according to the seventh embodiment. 41 (a) and 41 (b) are schematic views illustrating the magnetic device according to the seventh embodiment. 42 (a) to 42 (d) are schematic views illustrating the magnetic device according to the seventh embodiment. FIG. 43 is a schematic view illustrating the magnetic device according to the seventh embodiment. 44 (a) and 44 (b) are schematic views illustrating the magnetic device according to the seventh embodiment. 45 (a) to 45 (c) are schematic views illustrating the magnetic device according to the seventh embodiment. FIG. 46 is a schematic view illustrating the magnetic device according to the seventh embodiment. FIG. 47 is a schematic view illustrating the magnetic device according to the eighth embodiment. FIG. 48 is a schematic view illustrating the magnetic device according to the eighth embodiment. 49 (a) to 49 (e) are schematic views illustrating the magnetic device according to the eighth embodiment. FIG. 50 is a schematic view illustrating the magnetic device according to the eighth embodiment. 51 (a) to 51 (e) are schematic views illustrating the magnetic device according to the eighth embodiment. 52 (a) and 52 (b) are schematic cross-sectional views illustrating a part of the magnetic device according to the embodiment. FIG. 53 is a schematic view illustrating the magnetic device according to the embodiment. FIG. 54 is a schematic view illustrating the magnetic device according to the embodiment. FIG. 55 is a schematic view illustrating the magnetic device according to the embodiment. FIG. 56 is a schematic view illustrating the magnetic device according to the embodiment. FIG. 57 is a schematic view illustrating the magnetic device according to the embodiment. FIG. 58 is a schematic view illustrating the magnetic device according to the embodiment. FIG. 59 is a schematic view illustrating the magnetic device according to the embodiment. FIG. 60 is a schematic plan view illustrating the magnetic device according to the embodiment. FIG. 61 is a schematic plan view illustrating the magnetic device according to the embodiment. FIG. 62 is a schematic cross-sectional view illustrating the magnetic device according to the embodiment. FIG. 63 is a schematic cross-sectional view illustrating the magnetic device according to the embodiment. FIG. 64 is a schematic cross-sectional view illustrating the magnetic device according to the embodiment. FIG. 65 is a schematic cross-sectional view illustrating the magnetic device according to the embodiment. FIG. 66 is a schematic cross-sectional view illustrating the magnetic device according to the embodiment. FIG. 67 is a schematic cross-sectional view illustrating the magnetic device according to the embodiment. FIG. 68 is a schematic cross-sectional view illustrating the magnetic device according to the embodiment. FIG. 69 is a schematic cross-sectional view illustrating the magnetic device according to the embodiment. FIG. 70 is a schematic cross-sectional view illustrating the magnetic device according to the embodiment. FIG. 71 is a schematic cross-sectional view illustrating the magnetic device according to the embodiment. FIG. 72 is a schematic cross-sectional view illustrating the magnetic device according to the embodiment. FIG. 73 is a schematic cross-sectional view illustrating the magnetic device according to the embodiment.

Hereinafter, embodiments of the present invention will be described with reference to the drawings.
The drawings are schematic or conceptual, and the relationship between the thickness and width of each part, the ratio of the sizes between the parts, etc. are not always the same as the actual ones. Even if the same part is represented, the dimensions and ratios of each may be represented differently depending on the drawing.
In the specification of the present application and each figure, the same elements as those described above with respect to the above-mentioned figures are designated by the same reference numerals, and detailed description thereof will be omitted as appropriate.

(First Embodiment)
FIG. 1 is a schematic perspective view illustrating a magnetic device according to the first embodiment.
As shown in FIG. 1, the magnetic device 110 according to the embodiment includes a first element 11E, a first conductive type first transistor Tn1, a second conductive type second transistor Tp1, and a first wiring 77A. The second wiring 77B and the third wiring 77C are included. As shown in FIG. 1, the magnetic device 110 may include a control unit 70. The first conductive type is one of the n type and the p type. The second conductive type is the other of the n type and the p type. In the following, the first conductive type is n-type and the second conductive type is p-type.

The first element 11E includes the first conductive member 21 and the first laminated body S1. The first conductive member 21 includes a first portion 21a, a second portion 21b, and a third portion 21c. The third portion 21c is between the first portion 21a and the second portion 21b.

The first laminated body S1 includes a first magnetic layer 11 and a first opposed magnetic layer 11o. The first opposed magnetic layer 11o is between the third portion 21c and the first magnetic layer 11.

The direction from the first portion 21a to the second portion 21b is defined as the first direction.

For example, the first direction is the X-axis direction. One direction perpendicular to the X-axis direction is defined as the Z-axis direction. The direction perpendicular to the X-axis direction and the Z-axis direction is defined as the Y-axis direction.

The second direction from the third portion 21c to the first magnetic layer 11 intersects the first direction. The second direction is, for example, the Z-axis direction.

In this example, the first laminated body S1 further includes a first non-magnetic layer 11n. The first non-magnetic layer 11n is between the first opposed magnetic layer 11o and the first magnetic layer 11.

The electrical resistance of the first laminated body S1 can be changed. For example, the electrical resistance of the first laminated body S1 can be changed depending on the direction of the first current ic1 flowing through the first conductive member 21. The change in electrical resistance is based, for example, on the magnetoresistive effect.

For example, the orientation of the magnetization 11 m of the first magnetic layer 11 is substantially fixed. The magnetization 11 om of the first opposed magnetic layer 11o can be changed by the first current ic1 flowing through the first conductive member 21. The first magnetic layer 11 is, for example, a reference layer. The first opposed magnetic layer 11o is a magnetization free layer (or storage layer). The first laminated body S1 includes, for example, MTJ (Magnetic Tunnel Junction).

The direction of the magnetization 11 om of the first opposed magnetic layer 11o changes depending on the direction of the first current ic1 flowing through the first conductive member 21. The change in the orientation of the magnetization 11 om is considered to be based on, for example, the Spin Hall effect.

The first laminated body S1 can be applied as, for example, a storage cell. The first laminated body S1 can be applied, for example, as a part of an arithmetic circuit.

As shown in FIG. 1, the first element 11E may include the first electrode 11el. The first electrode 11el is electrically connected to the first magnetic layer 11. The electrical resistance of the first laminated body S1 corresponds to, for example, the electrical resistance between the first electrode 11el and the first conductive member 21.

The first transistor Tn1 includes a first end Sn1, a first other end Dn1, and a first gate Gn1. The first end Sn1 is, for example, one of the source and the drain. The first other end Dn1 is, for example, the other of the source and drain.

The second transistor Tp1 includes a second end Sp1, a second other end Dp1, and a second gate Gp1. The second end Sp1 is, for example, one of the source and the drain. The second other end Dp1 is, for example, the other of the source and drain.

The first other end Dn1 is electrically connected to the first portion 21a. In this example, the first end Dn1 and the first portion 21a are electrically connected by the conductive portion 75a.

The second other end Dp1 is electrically connected to the first magnetic layer 11. In this example, the first magnetic layer 11 and the second other end Dp1 are electrically connected by the first connecting member CN1.

The first wiring 77A is electrically connected to the second portion 21b. In this example, the conductive portion 75b electrically connects the first wiring 77A and the second portion 21b. The second wiring 77B is electrically connected to the first gate Gn1 and the second gate Gn2. The third wiring 77C is electrically connected to the first end Sn1 and the second end Sp1.

For example, the first wiring 77A functions as a bit line W / R-BL for writing and reading. For example, the second wiring 77B functions as a word line W / R-WL for writing and reading. For example, the third wiring 77C functions as a source line SL.

In the magnetic device 110 according to the embodiment, one bit line is provided for writing and reading, and one word line is provided as a word line for writing and reading. As a result, the number of wirings can be reduced as compared with the case where the bit line for writing, the bit line for reading, the word line for writing, and the word line for reading are provided. This makes it possible to provide a magnetic device capable of increasing the density.

The control unit 70 is electrically connected to the first wiring 77A, the second wiring 77B, and the third wiring 77C. The control unit 70 can perform the first write operation and the first read operation. The control unit 70 may include, for example, a word line and source line control circuit 70A and a bit line control circuit 70B. The word line and source line control circuit 70A is, for example, a column control circuit. The bit line control circuit 70B is, for example, a row control circuit. The control unit 70 according to the following embodiment may also include a word line and source line control circuit 70A and a bit line control circuit 70B.

For example, in the first writing operation, the control unit 70 sets the second wiring 77B (word line W / R-WL) as the selected state (for example, the potential corresponding to “1”) and uses the first transistor Tn1 to make the first. A current is supplied between the first portion 21a and the second portion 21b.

For example, in the first read operation, the control unit 70 sets the second wiring 77B (word line W / R-WL) in a non-selected state (for example, the potential corresponding to “0”) via the second transistor Tp1. A value corresponding to the electric resistance of the first laminated body S1 is detected.

As described above, the first transistor Tn1 is used in the writing operation, and the second transistor Tp1 is used in the reading operation. As a result, wiring can also be used in these operations.

In the writing operation, the first wiring 77A (bit line W / R-BL) may be set to a positive or negative potential (+/-). As a result, the first current ic1 is oriented from the first portion 21a to the second portion 21b, or from the second portion 21b to the first portion 21a. The direction of the magnetization 11 om of the first opposed magnetic layer 11o changes, and the electrical resistance of the first laminated body S1 changes.

2 (a), 2 (b), and 3 (a) to 3 (c) are schematic views illustrating the magnetic device according to the first embodiment.
FIG. 2A is a schematic transmission plan view. FIG. 2B is a cross-sectional view taken along the line B1-B1'of FIG. 2A. FIG. 3A is a cross-sectional view taken along the line A3-A3'of FIG. 2A. FIG. 3B is a cross-sectional view taken along the line A2-A2'of FIG. 2A. FIG. 3 (c) is a cross-sectional view taken along the line A1-A1'of FIG. 2 (a). In each of the following figures, the insulating portion is appropriately omitted.

As shown in FIG. 2A, the first laminated body S1, the first conductive member 21, the first transistor Tn1 and the second transistor Tp1 are provided in a region having a size of 4F × 4F. “F” corresponds to, for example, the minimum machining dimension.

As shown in FIG. 3C, the second direction (for example, the Z-axis direction) from the third portion 21c to the first magnetic layer 11 is the first direction (X-axis) from the first portion 21a to the second portion 21b. Cross the direction). As shown in FIG. 3C, in this example, the direction from the first end Sn1 to a part of the third wiring 77C is along the second direction (Z-axis direction). In this example, the direction from the first end Sn1 to the second portion 21b is along the second direction (Z-axis direction). As shown in FIG. 3A, the direction from the second end Sp1 to another part of the third wiring 77C is along the second direction (Z-axis direction). As shown in FIG. 3C, the direction from the first other end Dn1 to the first portion 21a is along the second direction (Z-axis direction).

With such a configuration, various elements included in the magnetic device 110 are placed in a small area. It is possible to provide a magnetic device capable of increasing the density.

As shown in FIG. 2A, the first connecting member CN1 is provided. The first connecting member CN1 electrically connects the first magnetic layer 11 and the second other end Dp1. As shown in FIG. 3A, the direction from the second other end Dp1 to the first connecting member CN1 is along the second direction (Z-axis direction). In this example, the second other end Dp1 is electrically connected to the first magnetic layer 11 of the first laminated body S1 by the conductive portion 75r, the first connecting member CN1, and the first electrode 11el.

As shown in FIG. 3B, the direction from the first laminated body S1 to a part of the first wiring 77A is along the second direction (Z-axis direction). A magnetic device capable of increasing the density can be provided.

As shown in FIG. 3C, the first other end Dn1 and the first portion 21a are electrically connected by the conductive portion 75a. The conductive portion 75a extends, for example, along the Z-axis direction.

FIG. 4 is a schematic perspective view illustrating the magnetic device according to the first embodiment.
As shown in FIG. 4, the magnetic device 111 according to the embodiment is in addition to the first element 11E, the first transistor Tn1, the second transistor Tp1, the first wiring 77A, the second wiring 77B, and the third wiring 77C. , A third transistor Tn2 of a first conductive type (for example, n type), a fourth transistor Tp2 of a second conductive type (for example, p type), and a fourth wiring 77D.

The configuration described for the magnetic device 110 can be applied to the first transistor Tn1, the second transistor Tp1, the first wiring 77A, the second wiring 77B, and the third wiring 77C. Hereinafter, the magnetic device 111 will be described with reference to parts different from the magnetic device 110.

As shown in FIG. 4, the first element 11E further includes a second laminated body S2 in addition to the first conductive member 21 and the first laminated body S1.

The first conductive member 21 includes a fourth portion 21d and a fifth portion 21e. There is a fifth portion 21e between the second portion 21b and the fourth portion 21d. The second laminated body S2 includes a second magnetic layer 12 and a second opposed magnetic layer 12o provided between the fifth portion 21e and the second magnetic layer 12. In this example, the second laminated body S2 further includes a second non-magnetic layer 12n. The second non-magnetic layer 12n is located between the second opposed magnetic layer 12o and the second magnetic layer 12.

For example, the direction of the magnetization 12 om of the second opposed magnetic layer 12o changes according to the direction of the first current ic1 flowing through the first conductive member 21. As a result, the angle between the direction of the magnetization 12 om and the direction of the magnetization 12 m of the second magnetic layer 12 changes. As a result, the electrical resistance of the second laminated body S2 changes.

In this example, the first element 11E includes the second electrode 12el. The second electrode 12el is electrically connected to the first magnetic layer 12. The electrical resistance of the second laminated body S2 corresponds to, for example, the electrical resistance between the second electrode 12el and the first conductive member 21.

As shown in FIG. 4, the third transistor Tn2 includes a third end Sn2, a third other end Dn2, and a third gate Gn2. The third end Sn2 is, for example, one of the source and the drain. The third other end Dn2 is, for example, the other of the source and drain.

The fourth transistor Tp1 includes a fourth end Sp2, a fourth other end Dp2, and a fourth gate Gp2. The fourth end Sp2 is, for example, one of the source and the drain. The fourth other end Dp2 is, for example, the other of the source and drain.

As shown in FIG. 4, the third other end Dn2 is electrically connected to the fourth portion 21d. In this example, the third end Dn2 and the fourth portion 21d are electrically connected by the conductive portion 75c.

The fourth other end Dp2 is electrically connected to the second magnetic layer 12. In this example, the fourth end Dp2 and the second magnetic layer 12 are electrically connected by the second connecting member CN2.

The fourth wiring 77D is electrically connected to the third gate Gn2 and the fourth gate Gp2. The third wiring 77C is electrically connected to the third end Sn2 and the fourth end Sp2.

For example, the first wiring 77A functions as a bit line W / R-BL for writing and reading with respect to the first laminated body S1 and the second laminated body S2. For example, the second wiring 77B functions as a word line W / R-WL for writing and reading with respect to the first laminated body S1. The fourth wiring 77D functions as a word line W / R-WL for writing and reading with respect to the second laminated body S2. For example, the third wiring 77C functions as a source line SL.

In the magnetic device 111, the wiring for writing and the wiring for reading are shared. This makes it possible to provide a magnetic device capable of increasing the density.

The control unit 70 is electrically connected to the first wiring 77A, the second wiring 77B, the third wiring 77C, and the fourth wiring 77D.

For example, the control unit 70 can perform a first write operation, a second write operation, a first read operation, and a second read operation.

In the first writing operation, the control unit 70 selects the second wiring 77B (word line W / R-WL for writing and reading) as a selected state, and sets the first portion 21a and the second through the first transistor Tn1. A current is supplied to and from the portion 21b. In the second writing operation, the control unit 70 selects the fourth wiring 77D (word line W / R-WL for writing and reading) in the selected state, and sets the fourth portion 21d and the second through the third transistor Tn2. A current is supplied between the portions 21b.

In the first read operation, the control unit 70 sets the second wiring 77B (word line W / R-WL for writing and reading) in the non-selected state, and sets the second layer S1 via the second transistor Tp1. Detect the value corresponding to the electrical resistance. In the second read operation, the control unit 70 sets the fourth wiring 77D in the non-selected state and detects a value corresponding to the electric resistance of the second laminated body S2 via the fourth transistor Tp2.

The control unit 70 may perform the following first write operation, second write operation, and read operation. In the first writing operation, the control unit 70 selects the second wiring 77B and supplies a current between the first portion 21a and the second portion 21b via the first transistor Tn1. In the second writing operation, the control unit 70 selects the fourth wiring 77D and supplies a current between the fourth portion 21d and the second portion 21b via the third transistor Tn2. In the read operation, the control unit 70 detects the value corresponding to the potential of the second portion 21b via the second transistor Tp1 and the fourth transistor Tp2 with the second wiring 77B and the fourth wiring 77D in the non-selected state. ..

5 (a), 5 (b), and 6 are schematic views illustrating the magnetic device according to the first embodiment.
FIG. 5A is a schematic transmission plan view. 5 (b) is a cross-sectional view taken along the line A1-A1'of FIG. 5 (a). FIG. 6 is a cross-sectional view taken along the line B1-B1'of FIG. 5 (a).

As shown in FIG. 5A, the first laminated body S1, the second laminated body S2, the first conductive member 21, the first transistor Tn1, the second transistor Tp1, the third transistor Tn2, and the fourth transistor Tp2 , 6F x 4F size area.

As shown in FIG. 5B, the second direction from the third portion 21c to the first magnetic layer 11 intersects the first direction (X-axis direction) from the first portion 21a to the second portion 21b. The second direction is, for example, the Z-axis direction. The direction from the fifth portion 21e to the second magnetic layer 12 is along the second direction.

As shown in FIG. 5A, the direction from the second end Sp1 to a part of the third wiring 77C is along the second direction (Z-axis direction).

As shown in FIG. 5A, the positions of the second wiring 77B in the first direction (X-axis direction) are the position of the first portion 21a in the first direction and the position of the fourth portion 21d in the first direction. Is between. The position of the fourth wiring 77D in the first direction is between the position of the second wiring 77B in the first direction and the position of the fourth portion 21d in the first direction. The position of the third wiring 77C in the first direction is between the position of the second wiring 77B in the first direction and the position of the fourth wiring 77D in the first direction.

As shown in FIG. 5B, the direction from the first other end Dn1 to the first portion 21a is along the second direction (Z-axis direction). The direction from the first end Sn1 to a part of the third wiring 77C is along the second direction (Z-axis direction). The direction from the third other end Dn2 to the fourth portion 21d is along the second direction (Z-axis direction).

As shown in FIG. 5B, the first connecting member CN1 and the second connecting member CN2 are provided. As shown in FIG. 4, the first connecting member CN1 electrically connects the first magnetic layer 11 and the second other end Dp1. As shown in FIG. 4, the second connecting member CN2 electrically connects the second magnetic layer 12 and the fourth other end Dp2.

As shown in FIGS. 5A and 5B, the direction from the second wiring 77B to the first connecting member CN1 is along the second direction (Z-axis direction). As shown in FIGS. 5A and 5B, the direction from the fourth wiring 77D to the second connecting member CN2 is along the second direction (Z-axis direction).

As shown in FIG. 6, the position of the fourth wiring 77D in the Z-axis direction is between the position of the third gate Gn2 in the Z-axis direction and the position of the first conductive member 21 in the Z-axis direction. As shown in FIG. 6, the position of the fourth wiring 77D in the Z-axis direction is between the position of the third gate Gn2 in the Z-axis direction and the position of the first wiring 77A in the Z-axis direction. It is possible to provide a magnetic device capable of increasing the density.

7 and 8 are schematic views illustrating the magnetic device according to the first embodiment.
FIG. 7 is a perspective view. FIG. 8 is a schematic transmission plan view.

As shown in FIG. 7, the magnetic device 112 according to the embodiment includes the fifth wiring 77E. Other configurations of the magnetic device 112 are similar to, for example, the configuration of the magnetic device 111. Hereinafter, an example of the fifth wiring 77E will be described.

As shown in FIG. 7, the fifth wiring 77E is electrically connected to at least one of the first portion 21a and the fourth portion 21d. For example, the first portion 21a is connected to the control unit 70 by the fifth wiring 77E. For example, the fourth portion 21d is connected to the control unit 70 by the fifth wiring 77E.

The fifth wiring 77E connected to the first portion 21a functions as, for example, a bit line R-BL for reading the first laminated body S1. The fifth wiring 77E connected to the fourth portion 21d functions as, for example, a bit line R-BL for reading the second laminated body S2.

Also in the magnetic device 112, wiring is also used in the writing operation. It is possible to provide a magnetic device capable of increasing the density.

As shown in FIGS. 7 and 8, the magnetic device 112 may further include a third connecting member CN3 and a fourth connecting member CN4. The third connecting member CN3 electrically connects the fifth wiring 77E and the first portion 21a. The fourth connecting member CN4 electrically connects the fifth wiring 77E and the fourth portion 21d.

As shown in FIG. 8, the third connecting member CN3 overlaps with the first other end Dn1 in the second direction (Z-axis direction). The fourth connecting member CN4 overlaps with the third other end Dn2 in the second direction. It is possible to provide a magnetic device capable of increasing the density.

In the magnetic device according to the first embodiment, the first conductive portion 25e and the second conductive portion 26e, which will be described later, may be provided. In the first embodiment, the transistor may be a fin-type transistor (for example, a fin-type FET) described later.

(Second Embodiment)
FIG. 9 is a schematic perspective view illustrating the magnetic device according to the second embodiment.
As shown in FIG. 9, the magnetic device 120 according to the embodiment includes a first element 11E, a first conductive portion 25e, and a second conductive portion 26e. As shown in FIG. 9, the magnetic device 120 may include a first transistor Tr1, a second transistor Tr2, a control unit 70, and the like.

As shown in FIG. 9, the first element 11E includes the first conductive member 21 and the first laminated body S1. The first conductive member 21 includes a first portion 21a, a second portion 21b, and a third portion 21c. The third portion 21c is between the first portion 21a and the second portion 21b.

The first laminated body S1 includes a first magnetic layer 11 and a first opposed magnetic layer 11o. The first opposed magnetic layer 11o is provided between the third portion 21c and the first magnetic layer 11. The first laminated body S1 may include the first non-magnetic layer 11n.

The first conductive portion 25e is electrically connected to the first portion 21a. The second conductive portion 26e is electrically connected to the second portion 21b. The direction from the first conductive portion 25e to the second conductive portion 26e is along the first direction. The first direction corresponds to the X-axis direction.

The first portion 21a is located between a part 25p of the first conductive portion 25e and a part 26p of the second conductive portion 26e in the first direction (X-axis direction). The second portion 21b is located between the first portion 21a and a part 26p of the second conductive portion 26e in the first direction (X-axis direction).

For example, the first portion 21a includes the first side surface sf1. The first side surface sf1 intersects the first direction (X-axis direction). The second portion 21b includes a second side surface sf2. The second side surface sf2 intersects the first direction (X-axis direction).

The above-mentioned part 25p of the first conductive portion 25e faces the first side surface sf1. The above-mentioned part 26p of the second conductive portion 26e faces the second side surface sf2. For example, a part of 25p is in contact with the first side surface sf1. Part 26p is in contact with the second side surface sf2.

In the magnetic device 120, the first conductive portion 25e and the second conductive portion 26e are connected to the side surface of the first conductive member 21. As a result, the area of the connection portion can be narrowed. A stable connection is possible. According to the magnetic device 120, it is possible to provide a magnetic device capable of increasing the density.

As shown in FIG. 9, the magnetic device 120 may include a first insulating portion 25i and a second insulating portion 26i. The first insulating portion 25i is located between the first laminated body S1 and the first conductive portion 25e. The second insulating portion 26i is located between the first laminated body S1 and the second conductive portion 26e. Stable electrical insulation can be obtained.

For example, a structure to be the first conductive member 21 and the laminated body S1 is formed. The structure includes a laminated film that becomes the laminated body S1. This laminated film is etched to obtain the first laminated body S1. After the insulating portion is formed on the side wall of the first laminated body S1, the film to be the first conductive member 21 is further etched. As a result, the side surface of the first conductive member 21 is formed. By forming the conductive film so as to be in contact with the side surface, the first conductive portion 25e and the second conductive portion 26e can be obtained.

In the embodiment, at least one of the first conductive portion 25e and the second conductive portion 26e may be electrically connected to the transistor. In this example, the first conductive portion 25e is electrically connected to the first transistor Tr1, and the second conductive portion 26e is electrically connected to the second transistor Tr2.

10 (a) and 10 (b) are schematic views illustrating the magnetic device according to the second embodiment.
FIG. 10A is a schematic transmission plan view. FIG. 10B is a cross-sectional view.

As shown in FIGS. 10A and 10B, the first conductive member 21 is provided between the insulating portion 27i and the insulating portion 27j. A first conductive portion 25e is provided between the insulating portion 27i and the first conductive member 21. A second conductive portion 26e is provided between the first conductive member 21 and the insulating portion 27j.

As shown in FIG. 10B, for example, the first conductive member 21 is provided between the insulating portion 27k and the laminated body S1.

As shown in FIG. 10B, the second transistor Tr2 includes the second source Sr2, the second drain Dr2, and the second gate Gr2. In this example, the second drain Dr2 and the second conductive portion 26e are electrically connected by the conductive portion 75d. The second source Sr2 is electrically connected to the third wiring 77C (source line SL). In this example, the direction from the second gate Gr2 to the first laminated body S1 is along the Z-axis direction.

As shown in FIG. 10B, the first conductive portion 25e is electrically connected to the writing bit wire W-BL. The first magnetic layer 11 is electrically connected to the read bit wire R-BL.

As shown in FIG. 10B, the lower end 25L of the first conductive portion 25e and the lower end 26L of the second conductive portion 26e are below the first conductive member 21. The transistors (for example, the first transistor Tr1 and the second transistor Tr2) are below the lower end 25L and the lower end 26L.

11 (a) and 11 (b) are schematic cross-sectional views illustrating the magnetic device according to the second embodiment.
In the magnetic device 121 shown in FIG. 11A, the position of the second gate Gr2 in the X-axis direction is shifted from the position of the first laminated body S1 in the X-axis direction.

In the magnetic device 122 shown in FIG. 11B, the length of the laminated body S1 in the X-axis direction is longer than the length of the laminated body S1 in the magnetic device 121 in the X-axis direction.

In the magnetic devices 120 to 122 according to the second embodiment, the first conductive member 21 is provided between the first conductive portion 25e and the second conductive portion 26e. A stable electrical connection can be obtained even when the processing conditions vary.

FIG. 12 is a schematic cross-sectional view illustrating the magnetic device according to the second embodiment.
As shown in FIG. 12, in the magnetic device 123, a plurality of first elements 11E are provided. The configuration described with respect to FIG. 9 is applied to each of the plurality of first elements 11E.

FIG. 13 is a schematic perspective view illustrating the magnetic device according to the second embodiment.
As shown in FIG. 13, in the magnetic device 124, the first conductive type first transistor Tn1 is provided as the first transistor Tr1, and the second conductive type second transistor Tp1 is provided as the second transistor Tr2. .. As a result, wiring can be omitted as described with respect to the first embodiment. It is possible to provide a magnetic device capable of increasing the density.

(Third Embodiment)
14 (a) and 14 (b) are schematic views illustrating the magnetic device according to the third embodiment.
FIG. 14A is a perspective view. FIG. 14B is a schematic transmission plan view.

As shown in FIG. 14A, the magnetic device 130 according to the embodiment includes the first element 11E and the first transistor Tr1. As shown in FIG. 14A, the magnetic device 130 may include a control unit 70.

As shown in FIG. 14A, the first element 11E includes the first conductive member 21 and the first laminated body S1. The first conductive member 21 includes a first portion 21a, a second portion 21b, and a third portion 21c. The third portion 21c is between the first portion 21a and the second portion 21b. The first laminated body S1 includes a first magnetic layer 11 and a first opposed magnetic layer 11o. The first opposed magnetic layer 11o is provided between the third portion 21c and the first magnetic layer 11. In this example, the first laminated body S1 includes a first non-magnetic layer 11n.

The first transistor Tr1 is a fin type transistor. For example, the first transistor Tr1 is a fin type FET (field effect transistor).

As shown in FIG. 14A, the direction from the first portion 21a to the second portion 21b is along the first direction. The first direction corresponds to the X-axis direction. The second direction from the third portion 21c to the first magnetic layer 11 intersects the first direction. The second direction is, for example, the Z-axis direction.

The first transistor Tr1 includes the first semiconductor member 35. The first semiconductor member 35 extends along the first direction (X-axis direction).

In this example, as shown in FIG. 14A, the direction from at least a part of the first semiconductor member 35 to at least a part of the first conductive member 21 is along the second direction (Z-axis direction). For example, the first conductive member 21 overlaps with the first semiconductor member 35 in the Z-axis direction.

The first semiconductor member 35 is electrically connected to, for example, the first conductive member 21. In this example, the first connection portion 31 and the second connection portion 32 are provided. The second connecting portion 32 electrically connects the first semiconductor member 35 to the first conductive member 21 (in this example, the second portion 21b).

In one example, the first transistor Tr1 controls the supply of current to the first conductive member 21. In one example, the first transistor Tr1 is used to control the measurement (reading operation) of the electrical resistance of the first laminated body S1.

Since the first transistor Tr1 has a fin structure, the above operation can be controlled more stably with a small area. Also in the third embodiment, it is possible to provide a magnetic device capable of increasing the density.

As shown in FIG. 14A, the first transistor Tr1 includes a first source Sr1, a first drain Dr1, and a first gate Gr1. In this example, the first drain Dr1 is electrically connected to the second portion 21b of the first conductive member 21 via the second connecting portion 32. The first source Sr1 is electrically connected to the source line SL.

The first gate Gr1 extends along the Y-axis direction. In this example, the first gate Gr1 faces the two sides of the first semiconductor member 35. The first gate Gr1 faces the upper surface of the first semiconductor member 35. The first gate Gr1 is, for example, a word line WL. Alternatively, the first gate Gr1 is electrically connected to, for example, the word line WL.

The first portion 21a of the first conductive member 21 is connected to the writing bit wire W-BL. The first magnetic layer 11 is electrically connected to the read bit wire R-BL. The above wiring is electrically connected to the control unit 70. The control unit 70 performs a write operation and a read operation.

15 (a) to 15 (e) are schematic transmission plan views illustrating the magnetic device according to the third embodiment.
In the magnetic devices 130a to 130e shown in FIGS. 15A to 15E, a plurality of first semiconductor members 35 are provided. In these magnetic devices, the position of the center of the first conductive member 21 in the Y-axis direction is substantially the same as the position of the center of the first semiconductor member 35 in the Y-axis direction. The first conductive member 21 is provided at symmetrical positions with respect to the positions of the plurality of first semiconductor members 35.

In the magnetic device 130d, the planar shape of the first conductive member 21 is a flat circular shape, and the planar shape of the first laminated body S1 is a flat circular shape. In the magnetic device 130e, the planar shape of the first conductive member 21 is a rectangular shape with rounded corners, and the planar shape of the first laminated body S1 is a flat circular shape.

16 (a) to 16 (f) are schematic transmission plan views illustrating the magnetic device according to the third embodiment.
In the magnetic devices 131a to 131f shown in FIGS. 16A to 16F, the position of the first semiconductor member 35 in the Y-axis direction (the third direction intersecting the plane including the first direction and the second direction). Is shifted from the position of the center of the first conductive member 21 in the Y-axis direction (third direction). The first conductive member 21 is provided at an asymmetrical position with respect to the positions of the plurality of first semiconductor members 35.

For example, the temperature of the first semiconductor member 35 may rise during the operation of the transistor. For example, as the temperature rises, the temperature of the first conductive member 21 and the like rises. If the first conductive member 21 is provided at an asymmetrical position, the temperature rise in the first conductive member 21 becomes non-uniform in the first conductive member 21. This makes it easier to determine the magnetization 11 om of the first opposed magnetic layer 11o in a stable manner. It becomes easy to obtain stable operation.

For example, spin characteristics such as the spin diffusion length in the first conductive member 21 decrease as the temperature rises. By providing the first conductive member 21 in a non-uniform (for example, asymmetrical) region, the recording current density acting on the first opposed magnetic layer 11o on the first conductive member 21 can be made non-uniform. As a result, the inverted portion of the magnetization 11om of the first opposed magnetic layer 11o is likely to be limited. For example, the inverting current distribution can be narrowed. This makes it easier to obtain stable operation, for example. For example, a high yield can be obtained.

For example, as the temperature of the first semiconductor member 35 rises, non-uniform stress may be introduced into the first conductive member 21. As a result, a region in which the reversal current density is locally low may be formed in the first conductive member 21. As a result, the magnetization 11 om becomes stable and easily inverted. It becomes easy to obtain stable operation.

In the magnetic device 131e, the planar shape of the first conductive member 21 is a flat circular shape, and the planar shape of the first laminated body S1 is a flat circular shape. In the magnetic device 131f, the planar shape of the first conductive member 21 is a rectangular shape with rounded corners, and the planar shape of the first laminated body S1 is a flat circular shape.

17 (a) to 17 (c) are schematic transmission plan views illustrating the magnetic device according to the third embodiment.
In the magnetic devices 132a to 132c shown in FIGS. 17A to 17C, the first semiconductor member 35 extends in the third direction (for example, the Y-axis direction). The third direction intersects a plane that intersects the first and second directions. In this example, the direction from a part of the first semiconductor member 35 to a part of the first conductive member 21 is along the second direction (Z-axis direction). For example, a part of the first conductive member 21 overlaps with the first semiconductor member 35 in the Z-axis direction.

In the magnetic devices 132a to 132c, the position of the first semiconductor member 35 in the X-axis direction is shifted from the position of the center of the first conductive member 21 in the X-axis direction. For example, the first conductive member 21 is provided at an asymmetrical position with reference to the positions of the plurality of first semiconductor members 35.

In the examples of the magnetic devices 130, 130a to 130e, 131a to 131f, and 132a to 132c, for example, the first semiconductor member 35 is electrically connected to the first conductive member 21. In the examples of the magnetic devices 130c and 131d, the second laminated body S2 is provided in addition to the first laminated body S1.

FIG. 18 is a schematic perspective view illustrating the magnetic device according to the third embodiment.
As shown in FIG. 18, in the magnetic device 133, the bit line W-BL for writing, the bit line R-BL for reading, the word line W-WL for writing, and the word line R-WL for reading are Provided.

The writing drain Drw of the first transistor Tr1 is electrically connected to the writing bit line W-BL via the second connecting portion 32. The read drain Drr is electrically connected to the read bit line R-BL via the first connection portion 31. The writing bit wire W-BL and the first conductive member 21 are electrically connected by the conductive portion 75e. The read-out bit wire R-BL and the first conductive member 21 are electrically connected by the conductive portion 75f.

FIG. 19 is a schematic perspective view illustrating the magnetic device according to the third embodiment.
As shown in FIG. 19, in the magnetic device 134, the first element 11E, the first transistor Tn1, the second transistor Tp1, the first wiring 77A, the second wiring 77B, and the third wiring 77C are provided. The first transistor Tn1 and the second transistor Tp1 are fin type transistors. As described above, in the magnetic device according to the first embodiment, at least one of the first transistor Tn1 and the second transistor Tp1 may include a fin type transistor.

For example, the first transistor Tn1 includes the second semiconductor member 36. The second transistor Tp1 includes a first semiconductor member 35.

The magnetic device 134 is provided with a first conductive portion 25e and a second conductive portion 26e. The first conductive portion 25e is electrically connected to the first portion 21a of the first conductive member 21. The second conductive portion 26e is electrically connected to the second portion 21b of the first conductive member 21. The first portion 21a is located between a part of the first conductive portion 25e and a part 26p of the second conductive portion 26e in the first direction (X-axis direction). The second portion 21b is located between the first portion 21a and a portion 26p of the second conductive portion 26e in the first direction.

In this way, at least two of the first to third embodiments may be combined.

Hereinafter, an example of the configuration of the elements included in the magnetic device according to the embodiment will be described.

The first conductive member 21 includes, for example, at least one selected from the group consisting of Ta, W, Re, Os, Ir, Pt, Au, Cu, Ag and Pd. The thickness of the first conductive member 21 is, for example, 3 nm or more and 10 nm or less (for example, 5 nm).

At least one of the first magnetic layer 11 and the second magnetic layer 12 includes, for example, at least one selected from the group consisting of Fe and Co. These magnetic layers may include a laminated film. The laminated film has, for example, a CoFe film (thickness: 2 nm) / Ru film (thickness: 0.8 nm) / Co film / CoFeB film (thickness: 2 nm).

At least one of the first opposed magnetic layer 11o and the second opposed magnetic layer 12o includes, for example, at least one selected from the group consisting of Fe and Co, and boron. The thickness of these magnetic layers is, for example, 1 nm or more and 2 nm or less (for example, 1.6 nm).

At least one of the first non-magnetic layer 11n and the second non-magnetic layer 12n contains, for example, Mg and oxygen. The thickness of these non-magnetic layers is, for example, 1 nm or more and 2 nm or less (for example, 1.4 nm).

The above description regarding the material and thickness is an example, and the composition of the elements included in the magnetic device can be changed.

The embodiments include, for example, the following configurations (eg, technical proposals).
(Structure 1)
A first element including a first conductive member and a first laminated body, wherein the first conductive member is a first portion between a first portion, a second portion, and the first portion and the second portion. The first laminated body includes a first magnetic layer and a first opposed magnetic layer provided between the third portion and the first magnetic layer. With the element
A first transistor including a first end, a first other end, and a first gate,
A second transistor including a second end, a second other end, and a second gate,
1st wiring and
2nd wiring and
3rd wiring and
With
The first other end is electrically connected to the first portion.
The second other end is electrically connected to the first magnetic layer.
The first wiring is electrically connected to the second portion and is connected to the second portion.
The second wiring is electrically connected to the first gate and the second gate, and is connected to the first gate and the second gate.
The third wiring is a magnetic device electrically connected to the first end and the second end.

(Structure 2)
With more control
The control unit is electrically connected to the first wiring, the second wiring, and the third wiring.
The control unit can perform a first write operation and a first read operation.
In the first writing operation, the control unit supplies a current between the first portion and the second portion via the first transistor with the second wiring selected.
In the first read operation, the control unit detects a value corresponding to the electric resistance of the first laminated body via the second transistor with the second wiring in a non-selected state, according to the magnetic device according to the configuration 1. ..

(Structure 3)
The second direction from the third portion to the first magnetic layer intersects the first direction from the first portion to the second portion.
The direction from the first end to a part of the third wiring is along the second direction.
The direction from the first end to a part of the second portion is along the second direction.
The direction from the second end to another part of the third wiring is along the second direction.
The magnetic device according to configuration 1 or 2, wherein the direction from the first other end to the first portion is along the second direction.

(Structure 4)
A first connecting member for electrically connecting the first magnetic layer and the second other end is further provided.
The magnetic device according to configuration 3, wherein the direction from the second end to a part of the first connecting member is along the second direction.

(Structure 5)
The magnetic device according to any one of configurations 2 to 4, wherein the direction from the first laminated body to the first wiring is along the second direction.

(Structure 6)
A third transistor including a third end, a third other end, and a third gate,
A fourth transistor including a fourth end, a fourth other end, and a fourth gate,
4th wiring and
With more
The first element further includes a second laminate.
The first conductive member includes a fourth portion and a fifth portion, and the fifth portion is located between the second portion and the fourth portion.
The second laminated body includes a second magnetic layer and a second opposed magnetic layer provided between the fifth portion and the second magnetic layer.
The third other end is electrically connected to the fourth portion.
The fourth other end is electrically connected to the second magnetic layer.
The fourth wiring is electrically connected to the third gate and the fourth gate, and is connected to the third gate and the fourth gate.
The magnetic device according to configuration 1, wherein the third wiring is electrically connected to the third end and the fourth end.

(Structure 7)
With more control
The control unit is electrically connected to the first wiring, the second wiring, the third wiring, and the fourth wiring.
The control unit can perform a first write operation, a second write operation, a first read operation, and a second read operation.
In the first writing operation, the control unit supplies a current between the first portion and the second portion via the first transistor with the second wiring selected.
In the second writing operation, the control unit supplies a current between the fourth portion and the second portion via the third transistor with the fourth wiring selected.
In the first read operation, the control unit detects a value corresponding to the electric resistance of the first laminated body via the second transistor with the second wiring in a non-selected state.
In the second readout operation, the control unit detects a value corresponding to the electrical resistance of the second laminated body via the fourth transistor with the fourth wiring in a non-selected state, according to the magnetic device according to the configuration 6. ..

(Structure 8)
With more control
The control unit is electrically connected to the first wiring, the second wiring, the third wiring, and the fourth wiring.
The control unit can perform a first write operation, a second write operation, and a read operation.
In the first writing operation, the control unit supplies a current between the first portion and the second portion via the first transistor with the second wiring selected.
In the second writing operation, the control unit supplies a current between the fourth portion and the second portion via the third transistor with the fourth wiring selected.
In the read operation, the control unit sets the second wiring and the fourth wiring in a non-selected state, and detects a value corresponding to the potential of the second portion via the second transistor and the fourth transistor. The magnetic device according to the configuration 6.

(Structure 9)
The second direction from the third portion to the first magnetic layer intersects the first direction from the first portion to the second portion.
The direction from the fifth portion to the second magnetic layer is along the second direction.
The direction from the second other end to a part of the third wiring is along the second direction.
The position of the second wiring in the first direction is between the position of the first portion in the first direction and the position of the fourth portion in the first direction.
The position of the fourth wiring in the first direction is between the position of the second wiring in the first direction and the position of the fourth portion in the first direction.
The position of the third wiring in the first direction is between the position of the second wiring in the first direction and the position of the fourth wiring in the first direction, configurations 6 to 8. The magnetic device according to any one of.

(Structure 10)
The direction from the first other end to the first portion is along the second direction.
The direction from the first end to a part of the third wiring is along the second direction.
The magnetic device according to any one of configurations 6 to 9, wherein the direction from the third other end to the fourth portion is along the second direction.

(Structure 11)
A first connecting member that electrically connects the first magnetic layer and the second other end,
A second connecting member that electrically connects the second magnetic layer and the fourth other end,
With more
The direction from the second wiring to the first connecting member is along the second direction.
The magnetic device according to the configuration 10, wherein the direction from the fourth wiring to the second connecting member is along the second direction.

(Structure 12)
With a fifth wiring
The magnetic device according to configuration 6, wherein the fifth wiring is electrically connected to at least one of the first portion and the fourth portion.

(Structure 13)
Further provided with a third connecting member and a fourth connecting member,
The third connecting member electrically connects the fifth wiring and the first portion.
The fourth connecting member electrically connects the fifth wiring and the fourth portion.
The third connecting member overlaps with the first other end in the second direction.
The magnetic device according to configuration 12, wherein the fourth connecting member overlaps the third other end in the second direction.

(Structure 14)
A first conductive portion electrically connected to the first portion,
A second conductive portion electrically connected to the second portion,
With more
The direction from the first conductive portion to the second conductive portion is along the first direction.
The first portion is located between a part of the first conductive portion and a part of the second conductive portion in the first direction.
The magnetic device according to any one of configurations 1 to 13, wherein the second portion is located between the first portion and the portion of the second conductive portion in the first direction.

(Structure 15)
The magnetic device according to any one of configurations 1 to 14, wherein at least one of the first transistor and the second transistor includes a fin type transistor.

(Structure 16)
A first element including a first conductive member and a first laminated body, wherein the first conductive member is a first portion between a first portion, a second portion, and the first portion and the second portion. The first laminated body includes a first magnetic layer and a first opposed magnetic layer provided between the third portion and the first magnetic layer. With the element
A first conductive portion electrically connected to the first portion,
A second conductive portion electrically connected to the second portion,
Transistor and
With
The direction from the first conductive portion to the second conductive portion is along the first direction.
The first portion is located between a part of the first conductive portion and a part of the second conductive portion in the first direction.
The second portion is located between the first portion and the portion of the second conductive portion in the first direction.
A magnetic device in which at least one of the first conductive portion and the second conductive portion is electrically connected to the transistor.

(Structure 17)
The first portion includes a first side surface that intersects the first direction.
The second portion includes a second side surface that intersects the first direction.
The part of the first conductive portion faces the first side surface, and is opposed to the first side surface.
16. The magnetic device according to configuration 16, wherein the part of the second conductive portion faces the second side surface.

(Structure 18)
With the first insulation part
With the second insulation part
With more
The first insulating portion is located between the first laminated body and the first conductive portion.
The magnetic device according to configuration 16, wherein the second insulating portion is located between the first laminated body and the second conductive portion.

(Structure 19)
A first element including a first conductive member and a first laminated body, wherein the first conductive member is a first portion between a first portion, a second portion, and the first portion and the second portion. The first laminated body includes a first magnetic layer and a first opposed magnetic layer provided between the third portion and the first magnetic layer. With the element
Fin type first transistor and
With
The direction from the first part to the second part is along the first direction.
The second direction from the third portion to the first magnetic layer intersects the first direction.
The first transistor includes a first semiconductor member.
A magnetic device whose direction from at least a part of the first semiconductor member to at least a part of the first conductive member is along the second direction.

(Structure 20)
The first semiconductor member extends along the first direction.
The position of the first semiconductor member in the third direction intersecting the plane including the first direction and the second direction is shifted from the position of the center of the first conductive member in the third direction. The magnetic device described.

(Structure 21)
The first semiconductor member extends along a third direction intersecting a plane including the first direction and the second direction.
The magnetic device according to configuration 19, wherein the position of the first semiconductor member in the first direction is shifted from the position of the center of the first conductive member in the first direction.

(Structure 22)
The first semiconductor member extends in the third direction.
The magnetic device according to configuration 19, wherein the third direction intersects a plane intersecting the first direction and the second direction.

(Fourth Embodiment)
FIG. 20 is a schematic perspective view illustrating the magnetic device according to the fourth embodiment.
21 to 24 are schematic plan views illustrating the magnetic device according to the fourth embodiment.
21 to 24 correspond to a plan view of each layer of the magnetic device.

As shown in FIG. 20, the magnetic device 140 according to the embodiment includes a first element 11E, a second element 12E, a first transistor Tr1, a second transistor Tr2, a third transistor Tr3, a fourth transistor Tr4, and a fifth transistor Tr5. , 6th transistor Tr6, 1st wiring 77A, 2nd wiring 77B, 3rd wiring 77C, 4th wiring 77D, and 5th wiring 77E.

As shown in FIGS. 20 and 21, the first transistor Tr1 includes a first end Ts1, a first other end Td1, and a first gate Tg1, and is a first conductive type. The second transistor Tr2 includes a second end Ts2, a second other end Td2, and a second gate Tg2, and is a second conductive type. The third transistor Tr3 includes a third end Ts3, a third other end Td3, and a third gate Tg3, and is a first conductive type. The fourth transistor Tr4 includes a fourth end Ts4, a fourth other end Td4, and a fourth gate Tg4, and is a second conductive type. The fifth transistor Tr5 includes a fifth end Ts5, a fifth other end Td5, and a fifth gate Tg5, and is a first conductive type. The sixth transistor Tr6 includes a sixth end Ts6, a sixth other end Td6, and a sixth gate Tg6, and is a first conductive type. In the following, the first conductive type is n-type and the second conductive type is p-type.

At least a part of the first end Ts1 may overlap with at least a part of the third end Ts3. At least a part of the second end Ts2 may overlap with at least a part of the fourth end Ts4. At least a part of the fifth end Ts5 may overlap with at least a part of the sixth end Ts6. The first end Ts1 may be substantially the same as the third end Ts3. The second end Ts2 may be substantially the same as the fourth end Ts4. The fifth end Ts5 may be substantially the same as the sixth end Ts6.

As shown in FIG. 20, each of the first element 11E and the second element 12E includes a first conductive member 21, a first laminated body S1, and a second laminated body S2.

The first conductive member 21 includes a first portion 21a, a second portion 21b, a third portion 21c, a fourth portion 21d, and a fifth portion 21e. There is a second portion 21b between the first portion 21a and the fourth portion 21d. There is a third portion 21c between the first portion 21a and the second portion 21b. There is a fifth portion 21e between the second portion 21b and the fourth portion 21d.

The first laminated body S1 includes a first magnetic layer 11 and a first opposed magnetic layer 11o provided between the third portion 21c and the first magnetic layer 11. A first non-magnetic layer 11n may be provided between the first opposed magnetic layer 11o and the first magnetic layer 11.

The second laminated body S2 includes a second magnetic layer 12 and a second opposed magnetic layer 12o provided between the fifth portion 21e and the second magnetic layer 12. A second non-magnetic layer 12n may be provided between the second opposed magnetic layer 12o and the second magnetic layer 12.

As shown in FIG. 20, the first other end Td1 is electrically connected to the first portion 21a of the first conductive member 21 of the first element 11E. In this example, this connection is made by the conductive section 75a.

The second other end Td2 is electrically connected to the first magnetic layer 11 of the first element 11E and the first magnetic layer 11 of the second element 12E. In this example, this connection is made by the first connecting member CN1.

The third other end Td3 is electrically connected to the fourth portion 21d of the first conductive member 21 of the first element 11E. In this example, this connection is made by the conductive section 75c.

The fourth other end Td4 is electrically connected to the second magnetic layer 12 of the first element 11E and the second magnetic layer 12 of the second element 12E. In this example, this connection is made by the second connecting member CN2.

The fifth other end Td5 is electrically connected to the first portion 21a of the first conductive member 21 of the second element 12E. In this example, this connection is made by the conductive section 75d.

The sixth other end Td6 is electrically connected to the fourth portion 21d of the first conductive member 21 of the second element 12E. In this example, this connection is made by the conductive section 75e.

The first wiring 77A is electrically connected to the second portion 21b of the first conductive member 21 of the first element 11E. In this example, this connection is made by the conductive section 75b. The first wiring 77A is, for example, a bit line W / R-BL1 for writing and reading.

The second wiring 77B is electrically connected to the first gate Tg1, the second gate Tg2, and the fifth gate Tg5. The second wiring 77B is, for example, a word line W / R-WL1 for writing and reading.

The third wiring 77C is electrically connected to the first end Ts1, the second end Ts2, the third end Ts3, the fourth end Ts4, the fifth end Ts5, and the sixth end Ts6. The third wiring 77C is, for example, a source line SL. In the embodiment, the first end Ts1, the third end Ts3, the fifth end Ts5 and the sixth end Ts6 are electrically connected for each polarity of the transistor, and the second end Ts2 and the fourth end Ts4 are electrically connected. May be connected.

The fourth wiring 77D is electrically connected to the third gate Tg3, the fourth gate Tg4, and the sixth gate Tg6. The fourth wiring 77D is, for example, a word line W / R-WL2 for writing and reading.

The fifth wiring 77E is electrically connected to the second portion 21b of the first conductive member 21 of the second element 11E. In this example, this connection is made by the conductive section 75f. The fifth wiring 77E is, for example, a bit line W / R-BL1 for writing and reading.

For example, the control unit 70 is electrically connected to the first wiring 77A, the second wiring 77B, the third wiring 77C, the fourth wiring 77D, the fifth wiring 77E, the conductive unit 75b, and the conductive unit 75f. The control unit 70 performs a writing operation and a reading operation on the first element 11E and the second element 12E.

In the magnetic device 140, the reading transistors (second transistor Tr2 and fourth transistor Tr4) are shared by the first element 11E and the second element 12E. The number of transistors can be reduced. It is possible to provide a magnetic device capable of increasing the density. By sharing the transistor, for example, power consumption can be reduced.

As shown in FIG. 21, in this example, the second wiring 77B, the third wiring 77C, and the fourth wiring 77D extend in the Y-axis direction. The second transistor Tr2 is located between the first transistor Tr1 and the fifth transistor Tr5 in the Y-axis direction. The fourth transistor Tr4 is located between the third transistor Tr3 and the sixth transistor Tr6 in the Y-axis direction. The first gate Tg1, the second gate Tg2, and the fifth gate Tg5 overlap with the second wiring 77B in the Z-axis direction. The third gate Tg3, the fourth gate Tg4, and the sixth gate Tg6 overlap with the fourth wiring 77D in the Z-axis direction.

As shown in FIG. 22, in this example, the first conductive member 21 of the first element 11E overlaps the first transistor Tr1 and the third transistor Tr3 in the Z-axis direction. In this example, in the Z-axis direction, the first conductive member 21 of the second element 12E overlaps the fifth transistor Tr5 and the sixth transistor Tr6. The first laminated body S1 of the first element 11E overlaps with the first gate Tg1 in the Z-axis direction. The second laminated body S2 of the first element 11E overlaps with the third gate Tg3 in the Z-axis direction. The first laminated body S1 of the second element 12E overlaps with the fifth gate Tg5 in the Z-axis direction. The second laminated body S2 of the second element 12E overlaps with the sixth gate Tg6 in the Z-axis direction.

As shown in FIG. 23, the first connecting member CN1 overlaps the first magnetic layer 11 of the first element 11E, the second other end Td2, and the first magnetic layer 11 of the second element 12E in the Z-axis direction. .. The second connecting member CN2 overlaps the second magnetic layer 12 of the first element 11E, the fourth other end Td4, and the second magnetic layer 12 of the second element 12E in the Z-axis direction. In the embodiment, at least one of the second transistor Tr2 and the fourth transistor Tr4 may include a region that does not overlap with the first conductive member 21.

As shown in FIG. 24, the first wiring 77A and the fifth wiring 77E extend along the X-axis direction.

FIG. 25 is a schematic perspective view illustrating the magnetic device according to the fourth embodiment.
26 to 29 are schematic plan views illustrating the magnetic device according to the fourth embodiment.
26-29 correspond to the plan view of each layer of the magnetic device.

As shown in FIG. 25, in the magnetic device 141 according to the embodiment, the third element 13E is provided in addition to the first element 11E and the second element 12E described with respect to the magnetic device 141. The fourth element 14E, the fifth element 15E, and the sixth element 16E may be further provided. The configuration of the first element 11E and the second element 12E in the magnetic device 141 is the same as the configuration of the first element 11E and the second element 12E in the magnetic device 140.

The magnetic device 141 includes a third element 13E, a seventh transistor Tr7, an eighth transistor Tr8, a ninth transistor Tr9, a sixth wiring 77F, a seventh wiring 77G, an eighth wiring 77H, and a ninth wiring 77I.

As shown in FIGS. 25 and 26, the seventh transistor Tr7 includes a seventh end Ts7, a seventh other end Td7, and a seventh gate Tg7, and is a first conductive type (for example, n type). The eighth transistor Tr8 includes an eighth end Ts8, an eighth other end Td8, and an eighth gate Tg8, and is a second conductive type (for example, p type). The ninth transistor Tr9 includes a ninth end Ts9, a ninth other end Td9, and a ninth gate Tg9, and is a second conductive type (for example, p type).

As shown in FIG. 25, the second element 13E includes the first conductive member 21, the first laminated body S1, and the second laminated body S2. The fourth portion 21d of the first conductive member 21 of the first element 11E is electrically connected to the first portion 21a of the first conductive member 21 of the third element 13E. The fourth portion 21d of the first conductive member 21 of the first element 11E may be continuous with the first portion 21a of the first conductive member 21 of the third element 13E. The boundary between the fourth portion 21d of the first conductive member 21 of the first element 11E and the first portion 21a of the first conductive member 21 of the third element 13E may be clear or unclear.

As shown in FIG. 25, the seventh other end Td7 is electrically connected to the fourth portion 21d of the first conductive member 21 of the third element 13E. The eighth other end Td8 is electrically connected to the first magnetic layer 11 of the third element 13E. In this example, this connection is made by the third connecting member CN3. The ninth other end Td9 is electrically connected to the second magnetic layer 12 of the third element 13E. In this example, this connection is made by the fourth connecting member CN4.

The sixth wiring 77F is electrically connected to the eighth gate Tg8. The sixth wiring 77F is, for example, a word line W / R-WL3 for writing and reading. The seventh wiring 77G is electrically connected to the seventh gate Tg7 and the ninth gate Tg9. The seventh wiring 77G is, for example, a word line W / R-WL4 for writing and reading. The eighth wiring 77H is electrically connected to the seventh end Ts7, the eighth end Ts8, and the ninth end Ts9. The eighth wiring 77H is, for example, the source line SL2. The third wiring 77C is, for example, the source line SL1. The ninth wiring 77I is electrically connected to the second portion 21b of the first conductive member 21 of the third element 13E. In this example, this connection is made by the conductive portion 75g.

In the magnetic device 141, the potential of the first portion 21a of the first conductive member 21 of the third element 13E is controlled by the third transistor Tr3. The third transistor Tr3 is shared by the first element 11E and the third element 13E. The number of transistors can be reduced. It is possible to provide a magnetic device capable of increasing the density. By sharing the transistor, for example, power consumption can be reduced.

As shown in FIG. 26, the fifth wiring 77F, the seventh wiring 77G, and the eighth wiring 77H extend along the Y-axis direction. In this example, the positions of the fifth transistor Tr5 and the sixth transistor Tr6 in the Y-axis direction are the positions of the second transistor Tr2 and the fourth transistor Tr4 in the Y-axis direction and the Y-axis of the eighth transistor Tr8 and the ninth transistor Tr9. It is between the position in the direction. In this example, in the X-axis direction, the third transistor Tr3 is between the first transistor Tr1 and the seventh transistor Tr7.

In the Z-axis direction, the 8th gate Tg8 overlaps with the 6th wiring 77F. The 7th gate Tg7 and the 9th gate Tg9 overlap with the 7th wiring 77G. The 7th end Ts7, the 8th end Ts8, and the 9th end Ts9 overlap with the 8th wiring 77H.

As shown in FIG. 27, the first laminated body S1 of the third element 13E overlaps with the sixth wiring 77F in the Z-axis direction. The second laminated body S2 of the third element 13E overlaps with the seventh wiring 77G in the Z-axis direction.

As shown in FIG. 28, the third connecting member CN3 overlaps the first magnetic layer 11 of the third element 13E and the eighth other end Td8 in the Z-axis direction. The fourth connecting member CN4 overlaps the second magnetic layer 12 of the third element 13E and the ninth other end Td9 in the Z-axis direction.

As shown in FIG. 29, the first wiring 77A (bit wire W / R-BL1 for writing and reading), the fifth wiring 77E (bit wire W / R-BL2 for writing and reading), and the first wiring 77A. The 9 wiring 77I (bit wire W / R-BL3 for writing and reading) extends along the X-axis direction.

As shown in FIG. 25, the magnetic device 141 may further include other elements (for example, the fourth element 14E, the fifth element 15E, the sixth element 16E, and the like). The fourth element 14E may have the same configuration as the third element 13E, for example. The fifth element 15E may have the same configuration as the second element 12E, for example. The sixth element 16E may have the same configuration as the third element 13E, for example.

The second portion 21b of the first conductive member 21 of the fourth element 14E is electrically connected to the writing and reading word lines W / R-WL4 by the conductive portion 75h. The fourth portion 21d of the first conductive member 21 of the fourth element 14E is electrically connected to the tenth transistor Tr10.

The second portion 21b of the first conductive member 21 of the fifth element 15E is electrically connected to the word line W / R-WL5 for writing and reading by the conductive portion 75i. The first portion 21a of the first conductive member 21 of the fifth element 15E is electrically connected to the eleventh transistor Tr11. The fourth portion 21d of the first conductive member 21 of the fifth element 15E is electrically connected to the twelfth transistor Tr12.

The second portion 21b of the first conductive member 21 of the sixth element 16E is electrically connected to the writing and reading word lines W / R-WL6 by the conductive portion 75j. The fourth portion 21d of the first conductive member 21 of the sixth element 16E is electrically connected to the thirteenth transistor Tr13.

The tenth transistor Tr10, the eleventh transistor Tr11, the twelfth transistor Tr12, and the thirteenth transistor Tr13 are, for example, n-type.

The second wiring 77B is electrically connected to the gates of the first gate Tg1, the second gate Tg2, the fifth gate Tg5, and the eleventh transistor Tr11. The third wiring 77C includes a first end Ts1, a second end Ts2, a third end Ts3, a fourth end Ts4, a fifth end Ts5, a sixth end Ts6, an end (source) of the eleventh transistor Tr11, and a twelfth end. It is electrically connected to the end (source) of the transistor Tr12. The fourth wiring 77D is electrically connected to the gates of the third gate Tg3, the fourth gate Tg4, the sixth gate Tg6, and the twelfth transistor Tr12. The seventh wiring 77G is electrically connected to the seventh gate Tg7, the ninth gate Tg9, the gate of the tenth transistor Tr10, and the gate of the thirteenth transistor Tr13. The eighth wiring 77H is electrically connected to the seventh end Ts7, the eighth end Ts8, the ninth end Ts9, the end (source) of the tenth transistor Tr10, and the end (source) of the thirteenth transistor Tr13.

As shown in FIG. 29, a bit line W / R-BL4 for writing and reading is provided corresponding to the fourth element 14E. A bit line W / R-BL5 for writing and reading is provided corresponding to the fifth element 15E. A bit line W / R-BL6 for writing and reading is provided corresponding to the sixth element 16E. These bit lines extend along the X-axis direction.

FIG. 30 is a schematic plan view illustrating the magnetic device according to the fourth embodiment.
As shown in FIG. 30, in the magnetic device 142 according to the embodiment, in addition to the first to sixth elements 11E to 16E, the seventh element 17E and the eighth element 18E are provided. A bit line W / R-BL7 for writing and reading is provided corresponding to the seventh element 17E. A bit line W / R-BL8 for writing and reading is provided corresponding to the eighth element 18E. These bit lines extend along the X-axis direction. The number of elements provided in the magnetic device is arbitrary.

(Fifth Embodiment)
FIG. 31 is a schematic perspective view illustrating the magnetic device according to the fifth embodiment.
As shown in FIG. 31, the magnetic device 150 according to the embodiment includes the first element 11E, the second element 12E, the first to seventh transistors Tr1 to Tr7, and the first to eighth wirings 77A to 77H.

The first transistor Tr1 includes a first end Ts1, a first other end Td1, and a first gate Tg1, and is a first conductive type (for example, n type). The second transistor Tr2 includes a second end Ts2, a second other end Td2, and a second gate Tg2, and is a second conductive type (for example, p type). The third transistor Tr3 includes a third end Ts3, a third other end Td3, and a third gate Tg3, and is a first conductive type. The fourth transistor Tr4 includes a fourth end Ts4, a fourth other end Td4, and a fourth gate Tg4, and is a second conductive type. The fifth transistor Tr5 includes a fifth end Ts5, a fifth other end Td5, and a fifth gate Tg5, and is a first conductive type. The sixth transistor Tr6 includes a sixth end Ts6, a sixth other end Td6, and a sixth gate Tg6, and is a second conductive type. The seventh transistor Tr7 includes a seventh end Ts7, a seventh other end Td7, and a seventh gate Tg7, and is of the second conductive type.

Each of the first element 11E and the second element 12E includes a first conductive member 21, a first laminated body S1, and a second laminated body S2. The configurations related to these described above may be applied to the first conductive member 21, the first laminated body S1 and the second laminated body S2 in the magnetic device 150.

The fourth portion 21d of the first conductive member 21 of the first element 11E is electrically connected to the first portion 21a of the first conductive member 21 of the second element 12E. Also in this example, the fourth portion 21d of the first conductive member 21 of the first element 11E may be continuous with the first portion 21a of the first conductive member 21 of the third element 13E. The boundary between the fourth portion 21d of the first conductive member 21 of the first element 11E and the first portion 21a of the first conductive member 21 of the third element 13E may be clear or unclear.

The first other end Td1 is electrically connected to the first portion 21a of the first conductive member 21 of the first element 11E. The second other end Td2 is electrically connected to the first magnetic layer 11 of the first element 11E. The third other end Td3 is electrically connected to the fourth portion 21d of the first conductive member 21 of the first element 11E and the first portion 21a of the first conductive member 21 of the second element 12E. The fourth other end Td4 is electrically connected to the second magnetic layer 12 of the first element 11E.

The fifth other end Td5 is electrically connected to the fourth portion 21d of the first conductive member 21 of the second element 12E. The sixth other end Td6 is electrically connected to the first magnetic layer 11 of the second element 12E. The seventh other end Td7 is electrically connected to the second magnetic layer 12 of the second element 12E.

The first wiring 77A is electrically connected to the second portion 21b of the first conductive member 21 of the first element 11E. The second wiring 77B is electrically connected to the first gate Tg1 and the second gate Tg2. The third wiring 77C is electrically connected to the first end Ts1, the second end Ts2, the third end Ts3, and the fourth end Ts4. The fourth wiring 77D is electrically connected to the third gate Tg3 and the fourth gate Tg4. The fifth wiring 77E is electrically connected to the second portion 21b of the first conductive member 21 of the second element 12E.

The sixth wiring 77F is electrically connected to the sixth gate Tg6. The seventh wiring 77G is electrically connected to the fifth gate Tg5 and the seventh gate Tg7. The eighth wiring 77H is electrically connected to the fifth end Ts5, the sixth end Ts6, and the seventh end Ts7.

In the magnetic device 150, the potential of the first portion 21a of the first conductive member 21 of the third element 13E is controlled by the third transistor Tr3. The third transistor Tr3 is shared by the first element 11E and the third element 13E. The number of transistors can be reduced. It is possible to provide a magnetic device capable of increasing the density. By sharing the transistor, for example, power consumption can be reduced.

The configuration described for the magnetic device 141 may be applied to the configuration of each layer of the elements included in the magnetic device 150.

(Sixth Embodiment)
FIG. 32 is a schematic perspective view illustrating the magnetic device according to the sixth embodiment.
33 to 37 are schematic plan views illustrating the magnetic device according to the sixth embodiment.
33 to 37 correspond to a plan view of each layer of the magnetic device.

As shown in FIG. 32, in the magnetic device 160 according to the embodiment, the first element 11E, the second element 12E, the third element 13E, the first transistor Tr1, the second transistor Tr2, the third transistor Tr4, and the first wiring 77A , 2nd wiring 77B, 3rd wiring 77C, 4th wiring 77D, 5th wiring 77E, and 6th wiring 77F.

As shown in FIGS. 32 and 33, the first transistor Tr3 includes a first end Ts1, a first other end Td1 and a first gate Tg1, and is a first conductive type (for example, n type). The second transistor Tr2 includes a second end Ts2, a second other end Td3, and a second gate Tg2, and is a second conductive type (for example, p type). The third transistor Tr3 includes a third end Ts3, a third other end Td3, and a third gate Tg3, and is a first conductive type. The fourth transistor Tr4 includes a fourth end Ts4, a fourth other end Td4, and a fourth gate Tg4, and is a second conductive type.

At least a part of the first end Ts1 may overlap with at least a part of the third end Ts3. At least a part of the second end Ts2 may overlap with at least a part of the fourth end Ts4. The first end Ts1 may be substantially the same as the third end Ts3. The second end Ts2 may be substantially the same as the fourth end Ts4.

Each of the first element 11E, the second element 12E, and the third element 13E includes the first conductive member 21, the first laminated body S1, and the second laminated body S2. The configurations related to these described above may be applied to the first conductive member 21, the first laminated body S1 and the second laminated body S2 in the magnetic device 160.

The first other end Td1 is electrically connected to the first portion 21a of the first conductive member 21 of the first element 11E and the first portion 21a of the first conductive member 21 of the third element 13E. In this example, this connection is made, for example, by the conductive portions 75a and the conductive portions 75d.

The second other end Td2 is electrically connected to the first magnetic layer 11 of the first element 11E and the first magnetic layer 11 of the second element 12E. In this example, this connection is made by the first connecting member CN1.

The third other end Td3 is electrically connected to the fourth portion 21d of the first conductive member 21 of the first element 11E and the fourth portion 21d of the first conductive member 21 of the third element 13E. In this example, this connection is made by the conductive section 75c and the conductive section 75e.

The fourth other end Td4 is electrically connected to the second magnetic layer 12 of the first element 11E and the second magnetic layer 12 of the second element 12E. In this example, this connection is made by the second connecting member CN2.

The first wiring 77A is electrically connected to the second portion 21b of the first conductive member 21 of the first element 11E. The second wiring 77B is electrically connected to the first gate Tg1 and the second gate Tg2. The third wiring 77C is electrically connected to the first end Ts1, the second end Ts2, the third end Ts3, and the fourth end Ts4. The fourth wiring 77D is electrically connected to the third gate Tg3 and the fourth gate Tg4. The first wiring 77A is, for example, a bit line W / R-BL1 for writing and reading.

The fifth wiring 77E is electrically connected to the second portion 21b of the first conductive member 21 of the second element 12E. In this example, this connection is made by the conductive section 75h. The fifth wiring 77E is, for example, a bit line W / R-BL2 for writing and reading.

The sixth wiring 77F is electrically connected to the second portion 21b of the first conductive member 21 of the third element 13E. In this example, this connection is made by the conductive section 75i. The sixth wiring 77F is, for example, a bit line W / R-BL3 for writing and reading.

In the magnetic device 160, the first transistor Tr1 sets the potential of the first portion 21a of the first conductive member 21 of the first element 11E and the potential of the first portion 21a of the first conductive member 21 of the third element 13E. Can be controlled. The third transistor Tr3 can control the potential of the fourth portion 21d of the first conductive member 21 of the first element 11E and the potential of the fourth portion 21d of the first conductive member 21 of the third element 13E. The first transistor Tr1 and the third transistor Tr3 are shared by the first element 11E and the third element 13E.

The second transistor Tr2 can control the potential of the first magnetic layer 11 of the first element 11E and the potential of the first magnetic layer 11 of the second element 12E. The fourth transistor Tr4 can control the potential of the second magnetic layer 12 of the first element 11E and the potential of the second magnetic layer 12 of the second element 12E. The second transistor Tr2 and the fourth transistor Tr4 are shared by the first element 11E and the second element 12E. The number of transistors can be reduced. It is possible to provide a magnetic device capable of increasing the density. By sharing the transistor, for example, power consumption can be reduced.

As shown in FIG. 34, the conductive portion 75a and the conductive portion 75d may be continuous with each other. The conductive portion 75c and the conductive portion 75e may be continuous with each other.

As shown in FIGS. 33 and 35, a transistor Tn for the second element 12E is provided. The transistor Tn is a first conductive type. A transistor Tp for the third element 13E is provided. The transistor Tp is a second conductive type.

As shown in FIG. 35, for example, the length of the first laminated body S1 in the X-axis direction is longer than the length of the first laminated body S1 in the Y-axis direction. For example, the length of the second laminated body S2 in the X-axis direction is longer than the length of the second laminated body S2 in the Y-axis direction. For example, in each of the first element 11E, the second element 11E, and the third element 13E, the magnetization 11 om of the first opposing magnetic layer 11o and the magnetization 12 om of the second opposed magnetic layer 12o are in the Y-axis direction in a steady state. Along with.

As shown in FIG. 36, for example, the length of the first connecting member CN1 in the Y-axis direction is longer than the length of the first connecting member CN1 in the X-axis direction. For example, the length of the second connecting member CN2 in the Y-axis direction is longer than the length of the second connecting member CN2 in the X-axis direction. A third connecting member CN3 and a fourth connecting member CN4 for the third element 13E may be provided.

As shown in FIG. 37, the first wiring 77A (bit wire W / R-BL1 for writing and reading), the fifth wiring 77E (bit wire W / R-BL2 for writing and reading), and the first wiring 77A. The 6 wiring 77F (bit wire W / R-BL3 for writing and reading) extends along the X-axis direction.

(7th Embodiment)
38, 39 (a) and 39 (b) are schematic views illustrating the magnetic device according to the seventh embodiment.
As shown in FIG. 38, the magnetic device 170 according to the embodiment includes a first element 11E, a second element 12E, a first transistor Tr1, a second transistor Tr2, a first wiring 77A, a second wiring 77B, and a third wiring 77C. And the fourth wiring 77D. The first transistor Tr1 includes a first end Ts1, a first other end Td1, and a first gate Tg1. The first transistor Tr1 is a first conductive type (for example, p type) transistor. The second transistor Tr2 includes a second end Ts2, a second other end Td2, and a second gate Tg2. The second transistor Tr2 is a second conductive type (for example, p type) transistor.

As shown in FIGS. 39 (a) and 39 (b), each of the first element 11E and the second element 12E includes a first conductive member 21, a first laminated body S1, and a first diode DE1. The first conductive member 21 includes a first portion 21a, a second portion 21b, and a third portion 21c. There is a third portion 21c between the first portion 21a and the second portion 21b. The first laminated body S1 includes a first magnetic layer 11 and a first opposed magnetic layer 11o. The first opposed magnetic layer 11o is provided between the third portion 21c and the first magnetic layer 11. In this example, the first non-magnetic layer 11n is provided between the first opposed magnetic layer 11o and the first magnetic layer 11.

One of the anode DA1 and the cathode DC1 of the first diode DE1 is electrically connected to the first magnetic layer 11. In the following, one of the anode DA1 and the cathode DC1 will be referred to as the anode DA1. The anode DA1 is laminated with, for example, the first laminated body S1. The anode DA1 is in contact with, for example, the first laminated body S1.

As shown in FIG. 38, the first other end Td1 is electrically connected to the first portion 21a of the first conductive member 21 of the first element 11E. The second other end Td2 is electrically connected to the first portion 21a of the first conductive member 21 of the second element 12E.

The first wiring 77A is electrically connected to the second portion 21b of the first conductive member 21 of the first element 11E and the second portion 21b of the first conductive member 21 of the second element 12E. The second wiring 77B is electrically connected to the first gate Tg1 and the second gate Tg2. The third wiring 77C is electrically connected to the first end Ts1 and the second end Ts2.

As shown in FIG. 38, the fourth wiring 77D is the other of the anode DA1 and the cathode DC1 of the first diode DE1 of the first element 11E and the other of the anode DA1 and the cathode DC1 of the first diode DE1 of the second element 12E. Is electrically connected to.

The first wiring 77A is, for example, a bit line WBL1 for writing. The second wiring 77B is, for example, a word line WL. The third wiring 77C is, for example, a source line SL. The fourth wiring 77D is, for example, a bit line RBL1 for reading.

In the following, one of the anode DA1 and the cathode DC1 will be the anode DA1, and the other of the anode DA1 and the cathode DC1 will be the cathode DC1.

In the embodiment, one of the anode DA1 and the cathode DC1 may be the cathode DC1, and the other of the anode DA1 and the cathode DC1 may be the anode DA1. When one of the anode DA1 and the cathode DC1 is the cathode DC1 and the other of the anode DA1 and the cathode DC1 is the anode DA1, the polarity of the voltage applied to the read bit line is such that one of the anode DA1 and the cathode DC1 is the anode DA1. This is opposite to the polarity of the voltage applied to the read bit line when the other of the anode DA1 and the cathode DC1 is the cathode DC1.

40, 41 (a) and 41 (b) are schematic views illustrating the magnetic device according to the seventh embodiment.
FIG. 41 (a) is a plan view corresponding to the XY plane including the transistor. FIG. 41 (b) is a plan view corresponding to the XY plane including the first conductive member 21.

As shown in FIG. 40, the first portion 21a of the first element 11E is connected to the first other end Td1. As shown in FIGS. 41 (a) and 41 (b), at least a part of the first conductive member 21 of the first element 11E overlaps with the first transistor Tr1 in the second direction (for example, the Z-axis direction). .. The second direction intersects the first direction (X-axis direction) from the first portion 21a to the second portion 21b.

As shown in FIG. 40, the first portion 21a of the second element 12E is connected to the second other end Td2. As shown in FIGS. 41 (a) and 41 (b), at least a part of the first conductive member 21 of the second element 12E overlaps with the second transistor Tr2 in the second direction (for example, the Z-axis direction). ..

42 (a) to 42 (d) are schematic views illustrating the magnetic device according to the seventh embodiment.
These figures illustrate the operation in the magnetic device 170.

As shown in FIG. 42A, in the writing operation to the first element 11E, the writing bit line WBL1 is set to “ON”, the reading bit line RBL1 is set to “OFF”, and the word line WL is set to “OFF”. , "ON". The write current wc1 flows through the first conductive member 21 of the first element 11E and the first transistor Tr1.

As shown in FIG. 42B, in the writing operation to the second element 12E, the writing bit line WBL1 is set to “ON”, the reading bit line RBL1 is set to “OFF”, and the word line WL is set to “OFF”. , "OFF". The write current wc2 flows through the first conductive member 21 of the second element 11E and the second transistor Tr2.

As shown in FIG. 42 (c), in the read operation of the first element 11E, the bit line WBL1 for writing is set to “OFF”, the bit line RBL1 for reading is set to “ON”, and the word line WL is set to “ON”. It is set to "ON". The read current rc1 flows through the first transistor Tr1 and the first element 11E (first laminated body S1 and first diode DE1).

As shown in FIG. 42 (d), in the read operation of the second element 12E, the bit line WBL1 for writing is set to “OFF”, the bit line RBL1 for reading is set to “ON”, and the word line WL is set to “ON”. It is set to "OFF". The read current rc2 flows through the second transistor Tr2 and the second element 12E (first laminated body S1 and first diode DE1).

43, 44 (a) and 44 (b) are schematic views illustrating the magnetic device according to the seventh embodiment.
As shown in FIG. 43, the magnetic device 171 according to the embodiment includes a first element 11E, a second element 12E, a first transistor Tr1, a second transistor Tr2, a first wiring 77A, a second wiring 77B, and a third wiring 77C. In addition to the fourth wiring 77D, the third element 13E, the fourth element 14E, the third transistor Tr3, the fourth transistor Tr4, the fifth wiring 77E, the sixth wiring 77F, and the seventh wiring 77G are included. The configuration of the first element 11E, the second element 12E, the first transistor Tr1, the second transistor Tr2, the first wiring 77A, the second wiring 77B, the third wiring 77C, and the fourth wiring 77D in the magnetic device 171 is a magnetic device. Similar to that in 170.

The third transistor Tr3 includes a third end Ts3, a third other end Td3, and a third gate Tg3. The third transistor Tr3 is a first conductive type (for example, n type) transistor. The fourth transistor Tr4 includes a fourth end Ts4, a fourth other end Td4, and a fourth gate Tg4. The fourth transistor Tr4 is a second conductive type (for example, p type) transistor.

As shown in FIGS. 44 (a) and 44 (b), each of the third element 13E and the fourth element 14E includes the first conductive member 21, the first laminated body S1 and the first diode DE1 described above. ..

As shown in FIG. 43, the third other end Td3 is electrically connected to the first portion 21a of the first conductive member 21 of the third element 13E. The fourth other end Td4 is electrically connected to the first portion 21a of the first conductive member 21 of the fourth element 14E.

The fifth wiring 77E is electrically connected to the second portion 21b of the first conductive member 21 of the third element 13E and the second portion 21b of the first conductive member 21 of the fourth element 14E. The sixth wiring 77F is electrically connected to the third gate Tg3 and the fourth gate Tg4. The third wiring 77C is further electrically connected to the third end Ts3 and the fourth end Ts4. The seventh wiring 77G is electrically connected to the other of the anode DA1 and the cathode DC1 of the first diode DE1 of the third element 13E and the other of the anode DA1 and the cathode DC1 of the first diode DE1 of the fourth element 14E. .. For example, the other of the anode DA1 and the cathode DC1 is the cathode DC1.

The second wiring 77B is, for example, the word line WL1. The fifth wiring 77E is, for example, a bit line WBL2 for writing. The sixth wiring 77F is, for example, the word line WL2. The seventh wiring 77G is, for example, a bit line RBL2 for reading.

The magnetic device 171 can perform the same operation as the magnetic device 170.

45 (a) to 45 (c) are schematic views illustrating the magnetic device according to the seventh embodiment.
FIG. 45A is a plan view corresponding to the XY plane including the transistor. FIG. 45B is a plan view corresponding to the XY plane including the first conductive member 21.

As shown in FIGS. 45 (a) and 45 (b), at least a part of the first conductive member 21 of the first element 11E overlaps with the first transistor Tr1 in the second direction (for example, the Z-axis direction). .. The second direction intersects the first direction (X-axis direction) from the first portion 21a to the second portion 21b. At least a part of the first conductive member 21 of the second element 12E overlaps with the second transistor Tr2 in the second direction (for example, the Z-axis direction).

As shown in FIGS. 45 (a) and 45 (c), at least a part of the first conductive member 21 of the third element 13E overlaps with the third transistor Tr3 in the second direction (for example, the Z-axis direction). .. At least a part of the first conductive member 21 of the fourth element 14E overlaps with the fourth transistor Tr4 in the second direction (for example, the Z-axis direction).

FIG. 46 is a schematic view illustrating the magnetic device according to the seventh embodiment.
As shown in FIG. 46, the magnetic device 172 according to the embodiment also includes the first element 11E, the second element 12E, the first transistor Tr1, the second transistor Tr2, the first wiring 77A, the second wiring 77B, and the third wiring 77C. And the fourth wiring 77D. Also in this example, the first transistor Tr1 is a first conductive type transistor, and the second transistor Tr2 is a second conductive type transistor. One of the anode DA1 and the cathode DC1 of the first diode DE1 (for example, the anode DA1) is electrically connected to the first magnetic layer 11 (see FIGS. 39 (a) and 39 (b)). Hereinafter, with respect to the example of the configuration of the magnetic device 172, the description of the same portion as the configuration of the magnetic device 170 will be omitted as appropriate.

The first other end Td1 is electrically connected to the first portion 21a of the first conductive member 21 of the first element 11E and the other of the anode DA1 and the cathode DC1 of the first diode DE1 of the second element 12E (for example, the cathode DC1). Connected to. The second other end Td2 is electrically connected to the anode DA1 of the first diode DE1 of the first element 11E and the other of the cathode DC1 (for example, the cathode DC1), and the first portion 21a of the first conductive member 21 of the second element 12E. Connected to.

The first wiring 77A is electrically connected to the second portion 21b of the first conductive member 21 of the first element 11E. The second wiring 77B is electrically connected to the first gate Tg1 and the second gate Tg2. The third wiring 77C is electrically connected to the first end Ts1 and the second end Ts2. The fourth wiring 77D is electrically connected to the second portion 21b of the first conductive member 21 of the second element 12E.

The first wiring 77A is, for example, the bit line BL1. The second wiring 77B is, for example, a word line WL. The third wiring 77C is, for example, a source line SL. The fourth wiring 77D is, for example, a bit line BL2.

In the magnetic device 172, the read current of one element flows through the first conductive member 21 of the other element.

(8th Embodiment)
FIG. 47 is a schematic view illustrating the magnetic device according to the eighth embodiment.
As shown in FIG. 47, the magnetic device 180 according to the embodiment includes first to fourth elements 11E to 14E, first to fourth transistors Tr1 to Tr4, and first to eleventh wirings 77A to 77K. The first transistor Tr1 includes a first end Ts1, a first other end Td1, and a first gate Tg1. The second transistor Tr2 includes a second end Ts2, a second other end Td2, and a second gate Tg2. The third transistor Tr3 includes a third end Ts3, a third other end Td3, and a third gate Tg1. The fourth transistor Tr4 includes a fourth end Ts4, a fourth other end Td4, and a fourth gate Tg4. In the eighth embodiment, the conductive type of the second transistor Tr2 may be the same as or different from the conductive type of the first transistor Tr1. In the eighth embodiment, the conductive type of the fourth transistor Tr4 may be the same as or different from the conductive type of the third transistor Tr3. In the following, the first to fourth transistors Tr1 to Tr4 are first conductive type (for example, n type) transistors.

Also in the magnetic device 180, each of the first element 11E, the second element 12E, the third element 13E and the fourth element 14E includes the first conductive member 21, the first laminated body S1 and the first diode DE1 described above. (See FIGS. 39 (a), 39 (b), 44 (a) and 44 (b)). One of the anode DA1 and the cathode DC1 of the first diode DE1 (for example, the anode DA1) is electrically connected to the first magnetic layer 11.

As shown in FIG. 47, the first other end Td1 is electrically connected to the first portion 21a of the first conductive member 21 of the first element 11E. The second other end Td2 is electrically connected to the first portion 21a of the first conductive member 21 of the second element 12E. The third other end Td3 is electrically connected to the first portion 21a of the first conductive member 21 of the third element 13E. The fourth other end Td4 is electrically connected to the first portion 21a of the first conductive member 21 of the fourth element 14E.

The first wiring 77A is electrically connected to the second portion 21b of the first conductive member 21 of the first element 11E. The second wiring 77B is electrically connected to the first gate Tg1 and the second gate Tg2. The third wiring 77C is electrically connected to the first end Ts1, the second end Ts2, the third end Ts3, and the fourth end Ts4. The fourth wiring 77D is electrically connected to the anode DA1 of the first diode DE1 of the first element 11E and the other of the cathode DC1 (for example, the cathode DC1).

The fifth wiring 77E is electrically connected to the second portion 21b of the first conductive member 21 of the second element 12E. The sixth wiring 77F is electrically connected to the third gate Tg3 and the fourth gate Tg4. The seventh wiring 77G is electrically connected to the anode DA1 of the first diode DE1 of the second element 12E and the other of the cathode DC1 (for example, the cathode DC1). The eighth wiring 77H is electrically connected to the second portion 21b of the first conductive member 21 of the third element 13E. The ninth wiring 77I is electrically connected to the anode DA1 of the first diode DE1 of the third element 13E and the other of the cathode DC1 (for example, the cathode DC1). The tenth wiring 77J is electrically connected to the second portion 21b of the first conductive member 21 of the fourth element 14E. The eleventh wiring 77K is electrically connected to the anode DA1 of the first diode DE1 of the fourth element 14E and the other of the cathode DC1 (for example, the cathode DC1).

The first wiring 77A is, for example, a bit line WBL1 for writing. The second wiring 77B is, for example, the word line WL1. The third wiring 77C is, for example, a source line SL. The fourth wiring 77D is, for example, a bit line RBL1 for reading. The fifth wiring 77E is, for example, a bit line WBL2 for writing. The sixth wiring 77F is, for example, the word line WL2. The seventh wiring 77G is, for example, a bit line WBL2 for writing. The eighth wiring 77H is, for example, a bit line WBL3 for writing. The ninth wiring 77I is, for example, a bit line RBL3 for reading. The tenth wiring 77J is, for example, a bit line WBL4 for writing. The eleventh wiring 77K is, for example, a bit line RBL4 for reading.

48 and 49 (a) to 49 (e) are schematic views illustrating the magnetic device according to the eighth embodiment.
FIG. 49A is a plan view corresponding to the XY plane including the transistor. FIG. 49B is a plan view corresponding to the XY plane including the first conductive member 21 of the first element 11E and the second element 12E. FIG. 49 (c) is a plan view corresponding to the XY plane including the first conductive member 21 of the third element 13E and the fourth element 14E. FIG. 49 (d) is a cross-sectional view taken along the ZZ plane including the first element 11E and the second element 12E. FIG. 49 (e) is a cross-sectional view taken along the ZZ plane including the third element 13E and the fourth element 14E. In these cross-sectional views, the insulating member is omitted.

As shown in FIG. 48, the first portion 21a of the first element 11E is connected to the first other end Td1. The first portion 21a of the second element 12E is connected to the second other end Td2. The first portion 21a of the third element 13E is connected to the third other end Td3. The first portion 21a of the fourth element 14E is connected to the fourth other end Td4.

As shown in FIGS. 49 (a), 49 (b) and 49 (d), at least a part (for example, the first part 21a) of the first conductive member 21 of the first element 11E is in the second direction (for example, the first part 21a). , Z-axis direction), it overlaps with the first transistor Tr1. The second direction intersects the first direction (X-axis direction) from the first portion 21a to the second portion 21b. At least a part (for example, the first part 21a) of the first conductive member 21 of the second element 12E overlaps with the second transistor Tr2 in the second direction (for example, the Z-axis direction).

As shown in FIGS. 49 (a), 49 (c) and 49 (e), at least a part (for example, the first part 21a) of the first conductive member 21 of the third element 13E is in the second direction (for example, the first part 21a). , Z-axis direction), it overlaps with the third transistor Tr3. At least a part (for example, the first part 21a) of the first conductive member 21 of the fourth element 14E overlaps with the fourth transistor Tr4 in the second direction (for example, the Z-axis direction).

The direction from the first transistor Tr1 to the third transistor Tr3 is along the first direction (for example, the X-axis direction). The direction from the second transistor Tr2 to the fourth transistor Tr4 is along the first direction. The direction from the second transistor Tr2 to the first transistor Tr1 includes a component in the third direction. The third direction intersects the plane containing the first and second directions. The third direction is, for example, the Y-axis direction. The direction from the fourth transistor Tr4 to the third transistor Tr3 includes a component of the third direction.

As shown in FIGS. 49 (d) and 49 (e), the positions of the first element 11E in the second direction (Z-axis direction) are the position of the first transistor Tr1 in the second direction and the position of the third element 13E. It is between the position in the second direction. The position of the first element 11E in the second direction is between the position of the first transistor Tr1 in the second direction and the position of the fourth element 14E in the second direction. The position of the second element 12E in the second direction is between the position of the second transistor Tr2 in the second direction and the position of the third element 13E in the second direction. The position of the second element 12E in the second direction is between the position of the second transistor Tr2 in the second direction and the position of the fourth element 14E in the second direction. The position in the second direction corresponds to, for example, the position in the height direction.

50 and 51 (a) to 51 (e) are schematic views illustrating the magnetic device according to the eighth embodiment.
FIG. 50 is a schematic view illustrating the magnetic device 181 according to the embodiment. The arrangement of the elements in the magnetic device 181 is different from the arrangement of the elements in the magnetic device 180. Other configurations in the magnetic device 181 are similar to those in the magnetic device 180. Hereinafter, an example of arranging the elements in the magnetic device 181 will be described.

FIG. 51 (a) is a plan view corresponding to the XY plane including the transistor. FIG. 51 (b) is a plan view corresponding to the XY plane including the first conductive member 21 of the first element 11E and the second element 12E. FIG. 51 (c) is a plan view corresponding to the XY plane including the first conductive member 21 of the third element 13E and the fourth element 14E. FIG. 51 (d) is a cross-sectional view taken along the ZZ plane including the first element 11E and the third element 13E. FIG. 51 (e) is a cross-sectional view taken along the ZZ plane including the second element 12E and the fourth element 14E. In these cross-sectional views, the insulating member is omitted.

As shown in FIGS. 51 (a), 51 (b) and 51 (d), at least a part (for example, the first part 21a) of the first conductive member 21 of the first element 11E is in the second direction (for example, the first part 21a). , Z-axis direction), it overlaps with the first transistor Tr1. As shown in FIG. 51 (e), at least a part (for example, the first part 21a) of the first conductive member 21 of the second element 12E overlaps with the second transistor Tr2 in the second direction.

As shown in FIGS. 51 (a), 51 (c) and 51 (d), at least a part (for example, the first part 21a) of the first conductive member 21 of the third element 13E is in the second direction. It overlaps with the third transistor Tr3. As shown in FIG. 51 (e), at least a part (for example, the first part 21a) of the first conductive member 21 of the fourth element 14E overlaps with the fourth transistor Tr4 in the second direction.

The direction from the first transistor Tr1 to the fourth transistor Tr4 is along the first direction (X-axis direction). The direction from the third transistor Tr3 to the second transistor Tr2 is along the first direction. The direction from the third transistor Tr3 to the first transistor Tr1 includes a component of the third direction. The third direction intersects the plane containing the first and second directions. The third direction is, for example, the Y-axis direction. The direction from the second transistor Tr2 to the fourth transistor Tr4 includes a component in the third direction.

As shown in FIG. 51 (d), the positions of the first element 11E in the second direction (for example, the Z-axis direction) are the position of the first transistor Tr1 in the second direction and the position of the third element 13E in the second direction. And between. As shown in FIG. 51 (e), the position of the second element 12E in the second direction is between the position of the second transistor Tr2 in the second direction and the position of the fourth element 14E in the second direction. ..

In the magnetic device 181, for example, it is easier to suppress interference between the densities of a plurality of elements as compared with the magnetic device 180. For example, it is easy to increase the density of a plurality of elements.

52 (a) and 52 (b) are schematic cross-sectional views illustrating a part of the magnetic device according to the embodiment.
As shown in FIG. 52 (a), in the magnetic device 185, the first diode DE1 includes, for example, a metal silicide layer DsL. The metal silicide layer DsL contains, for example, at least one selected from the group consisting of Ni, Al, Au, Pt, Er, Co, Pd, Ti and B, and silicon. When the first diode DE1 has such a configuration, for example, high heat resistance can be obtained. The first diode DE1 corresponds to, for example, a Schottky diode.

In the embodiment, the shape of the first diode DE1 in the XY plane may be substantially the same as the shape of the first laminated body S1 in the XY plane. Metal silicide tends to have a large stress. When the metal silicide is formed, the structure changes from the structure of the material from which the metal silicide is based. This causes a large stress. As a result, for example, the stress of the metal silicide layer DsL of the first diode DE1 is applied to the first laminated body S1. The magnetization of the magnetic layer contained in the first laminated body S1 can be easily controlled by anisotropy caused by stress. For example, in the first laminated body S1 to which the in-plane magnetization arrangement is applied, stable magnetization can be easily obtained. As a result, stable operation can be obtained even when the first laminated body S1 is miniaturized. For example, it becomes easy to obtain a large-capacity magnetic device. The melting points of Ni, Co, Pt and Pd are relatively close to the process temperature at the time of forming the first laminated body S1. Since the metal silicide layer DsL contains these materials, a high yield can be easily obtained.

As shown in FIG. 52B, in the magnetic device 186, the metal silicide layer DsL of the first diode DE1 may include a plurality of metal layers DsL1 and a plurality of silicon layers DsL2. One of the plurality of metal layers DsL1 is between one of the plurality of silicon layers DsL2 and another one of the plurality of silicon layers DsL2. One of the plurality of silicon layers DsL2 is between one of the plurality of metal layers DsL1 and another one of the plurality of metal layers DsL1. Silicide is formed by the plurality of metal layers DsL1 and the plurality of silicon layers DsL2. For example, stable rectification characteristics can be easily obtained. As described above, the first diode DE1 may contain the metal silicide. It becomes easy to obtain stable characteristics, and it is possible to provide a magnetic device capable of increasing the density.

The configurations of the magnetic devices 185 and 186 can be applied to any magnetic device according to the seventh and eighth embodiments.

FIG. 53 is a schematic view illustrating the magnetic device according to the embodiment.
As shown in FIG. 53, the magnetic device 187a according to the embodiment includes a first element 11E, a second element 12E, a first transistor Tr1, a second transistor Tr2, and first to sixth wirings 77A to 77F. The first transistor Tr1 includes a first end Ts1, a first other end Td1, and a first gate Tg1. The second transistor Tr2 includes a second end Ts2, a second other end Td2, and a second gate Tg2. The conductive type of the second transistor Tr2 may be the same as or different from the conductive type of the first transistor Tr1.

Also in the magnetic device 187a, each of the first element 11E and the second element 12E includes the first conductive member 21, the first laminated body S1 and the first diode DE1 described above (FIGS. 39 (a) and 39 (FIG. 39) and FIG. 39 (FIG. 39). b) See). One of the anode DA1 and the cathode DC1 of the first diode DE1 (for example, the anode DA1) is electrically connected to the first magnetic layer 11.

As shown in FIG. 53, the first other end Td1 is electrically connected to the first portion 21a of the first conductive member 21 of the first element 11E. The second other end Td2 is electrically connected to the first portion 21a of the first conductive member 21 of the second element 12E.

The first wiring 77A is electrically connected to the second portion 21b of the first conductive member 21 of the first element 11E. The second wiring 77B is electrically connected to the first gate Tg1 and the second gate Tg2. The third wiring 77C is electrically connected to the first end Ts1 and the second end Ts2. The fourth wiring 77D is electrically connected to the anode DA1 of the first diode DE1 of the first element 11E and the other of the cathode DC1 (for example, the cathode DC1). The fifth wiring 77E is electrically connected to the second portion 21b of the first conductive member 21 of the second element 12E. The sixth wiring 77F is electrically connected to the anode DA1 of the first diode DE1 of the second element 12E and the other of the cathode DC1 (for example, the cathode DC1).

In the magnetic device 187a, for example, the extending directions of the first wiring 77A, the third wiring 77C, the fourth wiring 77D, the fifth wiring 77E, and the sixth wiring 77F are the first extending directions Dx1 (for example, the Y-axis direction and X). Extends along one of the axial directions). For example, the second wiring 77B extends along a second extending direction Dx2 (eg, the other in the Y-axis direction and the X-axis direction) that intersects the first extending direction Dx1. The plane including the first extending direction Dx1 and the second extending direction Dx2 intersects the Z-axis direction. The plane including the first extending direction Dx1 and the second extending direction Dx2 is, for example, perpendicular to the Z-axis direction.

In the magnetic device 187a, the first wiring 77A is, for example, a bit line WBL1 for writing. The second wiring 77B is, for example, a word line WL. The third wiring 77C is, for example, a source line SL. The fourth wiring 77D is, for example, a bit line RBL1 for reading. The fifth wiring 77E is, for example, a bit line WBL2 for writing. The sixth wiring 77F is, for example, a bit line RBL2 for reading.

FIG. 54 is a schematic view illustrating the magnetic device according to the embodiment.
As shown in FIG. 54, the magnetic device 187b according to the embodiment also includes the first element 11E, the second element 12E, the first transistor Tr1, the second transistor Tr2, and the first to sixth wirings 77A to 77F. .. The electrical connection of these elements in the magnetic device 187b is the same as the electrical connection in the magnetic device 187a. The extending direction of the wiring in the magnetic device 187a is different from the extending direction of the wiring in the magnetic device 187a.

In the magnetic device 187b, for example, the first wiring 77A, the third wiring 77C, and the fifth wiring 77E extend along the first extending direction Dx1 (for example, one of the Y-axis direction and the X-axis direction). The second wiring 77B, the fourth wiring 77D, and the sixth wiring 77F extend along the second extending direction Dx2 (for example, the other in the Y-axis direction and the X-axis direction) intersecting the first extending direction Dx1.

In the magnetic device 187b, the first wiring 77A is, for example, a bit line WBL1 for writing. The second wiring 77B is, for example, a word line WL. The third wiring 77C is, for example, a source line SL. The fourth wiring 77D is, for example, a bit line RBL1 for reading. The fifth wiring 77E is, for example, a bit line WBL2 for writing. The sixth wiring 77F is, for example, a bit line RBL2 for reading.

FIG. 55 is a schematic view illustrating the magnetic device according to the embodiment.
As shown in FIG. 55, the magnetic device 187c according to the embodiment is in addition to the first element 11E, the second element 12E, the first transistor Tr1, the second transistor Tr2, and the first to sixth wirings 77A to 77F. , Third element 13E, fourth element 14E, third transistor Tr3, fourth transistor Tr4, and seventh to eleventh wirings 77G to 77K. In the magnetic device 187c, the configurations of the first element 11E, the second element 12E, the first transistor Tr1, the second transistor Tr2, and the first to sixth wirings 77A to 77F are the same as those in the magnetic device 187a, for example. good. The magnetic device 187c may be substantially similar to the magnetic device 180.

The third transistor Tr3 includes a third end Ts3, a third other end Td3, and a third gate Tg3. The fourth transistor Tr4 includes a fourth end Ts4, a fourth other end Td4, and a fourth gate Tg4. The conductive type of the third transistor Tr3 and the fourth transistor Tr4 may be the same as or different from the conductive type of the first transistor Tr1.

Also in the magnetic device 187c, each of the third element 13E and the fourth element 14E includes the first conductive member 21, the first laminated body S1 and the first diode DE1 described above (FIGS. 44 (a) and 44 (FIG. 44). b) See). One of the anode DA1 and the cathode DC1 of the first diode DE1 (for example, the anode DA1) is electrically connected to the first magnetic layer 11.

As shown in FIG. 55, the third other end Td3 is electrically connected to the first portion 21a of the first conductive member 21 of the third element 13E. The fourth other end Td4 is electrically connected to the first portion 21a of the first conductive member 21 of the fourth element 14E.

The third wiring 77C is further electrically connected to the third end Ts3 and the fourth end Ts4. The seventh wiring 77G is electrically connected to the third gate Tg3 and the fourth gate Tg4. The eighth wiring 77H is electrically connected to the second portion 21b of the first conductive member 21 of the third element 13E. The ninth wiring 77I is electrically connected to the other of the anode DA1 and the cathode DC1 of the first diode DE1 of the third element 13E. The tenth wiring 77J is electrically connected to the second portion 21b of the first conductive member 21 of the fourth element 14E. The eleventh wiring 77K is electrically connected to the other of the anode DA1 and the cathode DC1 of the first diode DE1 of the fourth element 14E.

In the magnetic device 187c, for example, the first wiring 77A, the third wiring 77C, the fourth wiring 77D, the fifth wiring 77E, the sixth wiring 77F, the eighth wiring 77H, the ninth wiring 77I, the tenth wiring 77J, and the eleventh wiring. 77K extends along the first extending direction Dx1 (for example, one of the Y-axis direction and the X-axis direction). The second wiring 77B and the seventh wiring 77G extend along the second extending direction Dx2 (for example, the other in the Y-axis direction and the X-axis direction) intersecting the first extending direction Dx1.

In the magnetic device 187c, the first wiring 77A is, for example, a bit line WBL1 for writing. The second wiring 77B is, for example, the word line WL1. The third wiring 77C is, for example, a source line SL. The fourth wiring 77D is, for example, a bit line RBL1 for reading. The fifth wiring 77E is, for example, a bit line WBL2 for writing. The sixth wiring 77F is, for example, a bit line RBL2 for reading. The seventh wiring 77G is, for example, the word line WL2. The eighth wiring 77H is, for example, a bit line WBL3 for writing. The ninth wiring 77I is, for example, a bit line RBL3 for reading. The tenth wiring 77J is, for example, a bit line WBL4 for writing. The eleventh wiring 77K is, for example, a bit line WBL4 for reading.

FIG. 56 is a schematic view illustrating the magnetic device according to the embodiment.
As shown in FIG. 56, the magnetic device 187d according to the embodiment also includes the first to fourth elements 11E to 14E, the first to fourth transistors Tr1 to TR4, and the first to eleventh wirings 77A to 77K. In the magnetic device 187d, the electrical connection relationship between the transistor and the wiring is the same as that in the magnetic device 187c. The extending direction of the wiring in the magnetic device 187d is different from the extending direction of the wiring in the magnetic device 187c.

In the magnetic device 187d, for example, the first wiring 77A, the third wiring 77C, the fifth wiring 77E, the eighth wiring 77H, and the tenth wiring 77J have the first extending direction Dx1 (for example, the Y-axis direction and the X-axis direction). Extends along one). The second wiring 77B, the fourth wiring 77D, the sixth wiring 77F, the seventh wiring 77G, the ninth wiring 77I, and the eleventh wiring 77K have a second extending direction Dx2 (for example, the Y axis) that intersects the first extending direction Dx1. Extends along the direction (the other in the direction and the X-axis direction).

In the magnetic device 187d, the first wiring 77A is, for example, a bit line WBL1 for writing. The second wiring 77B is, for example, the word line WL1. The third wiring 77C is, for example, a source line SL. The fourth wiring 77D is, for example, a word line RWL1 for reading. The fifth wiring 77E is, for example, a bit line WBL2 for writing. The sixth wiring 77F is, for example, a word line RWL2 for reading. The seventh wiring 77G is, for example, the word line WL2. The eighth wiring 77H is, for example, a bit line WBL3 for writing. The ninth wiring 77I is, for example, a word line RWL3 for reading. The tenth wiring 77J is, for example, a bit line WBL4 for writing. The eleventh wiring 77K is, for example, a word line RWL4 for reading.

FIG. 57 is a schematic view illustrating the magnetic device according to the embodiment.
As shown in FIG. 57, in the magnetic device 187d according to the embodiment, the first portion 21a of the first element 11E is connected to the first other end Td1. The first portion 21a of the second element 12E is connected to the second other end Td2. The first portion 21a of the third element 13E is connected to the third other end Td3. The first portion 21a of the fourth element 14E is connected to the fourth other end Td4.

FIG. 58 is a schematic view illustrating the magnetic device according to the embodiment.
As shown in FIG. 58, the magnetic device 187e according to the embodiment includes a first element 11E, a second element 12E, a first transistor Tr1, a second transistor Tr2, and first to seventh wirings 77A to 77G. The first transistor Tr1 includes a first end Ts1, a first other end Td1, and a first gate Tg1. The second transistor Tr2 includes a second end Ts2, a second other end Td2, and a second gate Tg2. The conductive type of the second transistor Tr2 may be the same as or different from the conductive type of the first transistor Tr1.

Also in the magnetic device 187e, each of the first element 11E and the second element 12E includes the first conductive member 21, the first laminated body S1 and the first diode DE1 described above (FIGS. 39 (a) and 39 (FIG. 39) and FIG. 39 (FIG. 39). b) See). One of the anode DA1 and the cathode DC1 of the first diode DE1 (for example, the anode DA1) is electrically connected to the first magnetic layer 11.

As shown in FIG. 58, the first other end Td1 is electrically connected to the first portion 21a of the first conductive member 21 of the first element 11E. The second other end Td2 is electrically connected to the first portion 21a of the first conductive member 21 of the second element 12E.

The first wiring 77A is electrically connected to the second portion 21b of the first conductive member 21 of the first element 11E and the second portion 21b of the first conductive member 21 of the second element 12E. The second wiring 77B is electrically connected to the first gate Tg1. The third wiring 77C is electrically connected to the first end Ts1. The fourth wiring 77D is electrically connected to the anode DA1 of the first diode DE1 of the first element 11E and the other of the cathode DC1 (for example, the cathode DC1). The fifth wiring 77E is electrically connected to the second gate Tg2. The sixth wiring 77F is electrically connected to the second end Ts2. The seventh wiring 77G is electrically connected to the anode DA1 of the first diode DE1 of the second element 12E and the other of the cathode DC1 (for example, the cathode DC1).

In the magnetic device 187e, the first wiring 77A, the third wiring 77C, and the sixth wiring 77F extend along the first extending direction Dx1 (for example, one of the Y-axis direction and the X-axis direction). For example, the second wiring 77B, the fourth wiring 77D, the fifth wiring 77E, and the seventh wiring 77G have a second extending direction Dx2 (for example, the other in the Y-axis direction and the X-axis direction) intersecting with the first extending direction Dx1. Extend along.

In the magnetic device 187e, the first wiring 77A is, for example, a common line CL. The second wiring 77B is, for example, the word line WL1. The third wiring 77C is, for example, the source line SL1 (or the bit line WBL1 for writing). The fourth wiring 77D is, for example, a bit line RBL1-L for reading. The fifth wiring 77E is, for example, the word line WL2. The sixth wiring 77F is, for example, a source line SL2 (or a bit line WBL2 for writing). The seventh wiring 77G is, for example, a bit line RBL1-R for reading.

FIG. 59 is a schematic view illustrating the magnetic device according to the embodiment.
As shown in FIG. 59, the magnetic device 187f according to the embodiment is in addition to the first element 11E, the second element 12E, the first transistor Tr1, the second transistor Tr2, and the first to seventh wirings 77A to 77G. , Third element 13E, fourth element 14E, third transistor Tr3, fourth transistor Tr4, and eighth to tenth wirings 77H to 77J. In the magnetic device 187f, the configurations of the first element 11E, the second element 12E, the first transistor Tr1, the second transistor Tr2, and the first to seventh wirings 77A to 77G are the same as those in the magnetic device 187e, for example. good.

The third transistor Tr3 includes a third end Ts3, a third other end Td3, and a third gate Tg3. The fourth transistor Tr4 includes a fourth end Ts4, a fourth other end Td4, and a fourth gate Tg4. The conductive type of the third transistor Tr3 and the fourth transistor Tr4 may be the same as or different from the conductive type of the first transistor Tr1.

Also in the magnetic device 187f, each of the third element 13E and the fourth element 14E includes the first conductive member 21, the first laminated body S1 and the first diode DE1 described above (FIGS. 44 (a) and 44 (FIG. 44). b) See). One of the anode DA1 and the cathode DC1 of the first diode DE1 (for example, the anode DA1) is electrically connected to the first magnetic layer 11.

As shown in FIG. 59, the third other end Td3 is electrically connected to the first portion 21a of the first conductive member 21 of the third element 13E. The fourth other end Td4 is electrically connected to the first portion 21a of the first conductive member 21 of the fourth element 14E.

The first wiring 77A is electrically connected to the second portion 21b of the first conductive member 21 of the first element 11E and the second portion 21b of the first conductive member 21 of the second element 12E. The second wiring 77B is further electrically connected to the third gate Tg3 in addition to the first gate Tg1. The third wiring 77C is further electrically connected to the third end Ts3 in addition to the first end Ts1. The fourth wiring 77D is electrically connected to the anode DA1 of the first diode DE1 of the first element 11E and the other of the cathode DC1 (for example, the cathode DC1). The fifth wiring 77E is further electrically connected to the fourth gate Tg4 in addition to the second gate Tg2. The sixth wiring 77F is further electrically connected to the fourth end Ts4 in addition to the second end Ts2. The seventh wiring 77G is electrically connected to the anode DA1 of the first diode DE1 of the second element 12E and the other of the cathode DC1 (for example, the cathode DC1).

The eighth wiring 77H is electrically connected to the second portion 21b of the first conductive member 21 of the third element 13E and the second portion 21b of the first conductive member 21 of the fourth element 14E. The ninth wiring 77I is electrically connected to the anode DA1 of the first diode DE1 of the third element 13E and the other of the cathode DC1 (for example, the cathode DC1). The tenth wiring 77J is electrically connected to the other of the anode DA1 and the cathode DC1 (for example, the cathode DC1) of the first diode DE1 of the fourth element 14E.

In the magnetic device 187f, the first wiring 77A, the third wiring 77C, the sixth wiring 77F, and the eighth wiring 77H extend along the first extending direction Dx1 (for example, one of the Y-axis direction and the X-axis direction). The second wiring 77B, the fourth wiring 77D, the fifth wiring 77E, the seventh wiring 77G, the ninth wiring 77I, and the tenth wiring 77J intersect the first extending direction Dx1 with the second extending direction Dx2 (for example, the Y axis). Extends along the direction (the other in the direction and the X-axis direction).

In the magnetic device 187f, for example, the first wiring 77A is, for example, the common line CL1. The second wiring 77B is, for example, the word line WL1. The third wiring 77C is a source line SL1 (or a bit line WBL1 for writing). The fourth wiring 77D is, for example, a bit line RBL1-L for reading. The fifth wiring 77E is, for example, the word line WL2. The sixth wiring 77F is, for example, a source line SL2 (or a bit line WBL2 for writing). The seventh wiring 77G is, for example, a bit line RBL1-R for reading. The eighth wiring 77H is, for example, the common line CL2. The ninth wiring 77I is, for example, a bit line RBL2-L for reading. The tenth wiring 77J is, for example, a bit line RBL2-L for reading.

60 and 61 are schematic plan views illustrating the magnetic device according to the embodiment.
62 to 73 are schematic cross-sectional views illustrating the magnetic device according to the embodiment.

FIG. 60 is a plan view of a plane including a transistor (semiconductor region). FIG. 61 is a plan view when some of the components are transparent. These planes are substantially perpendicular to the Z-axis direction. 62 to 68 show the X1-X1 line, X2-X2 line, X3-X3 line, X4-X4 line, X5-X5 line, X6-X6 line, and X7-X7 line of FIGS. 60 and 61. It is a cross-sectional view along. 69 to 73 are cross-sectional views taken along the lines Y1-Y1, Y2-Y2, Y3-Y3, Y4-Y4, and Y5-Y5 of FIGS. 60 and 61.

As shown in FIGS. 62 to 73, the first to fourth transistors Tr1 to Tr4 are included in the semiconductor region 79. The semiconductor region 79 may be, for example, a semiconductor substrate. For example, the first to fourth elements 11E to 14E and the first to tenth wirings 77A to 77J are provided on the semiconductor region 79.

As shown in FIG. 62, the third other end Td3 is electrically connected to the first conductive member 21 corresponding to the third element 13E by the connecting member 78d and the connecting member 78c. The eighth wiring 77H overlaps with the first wiring 77A in the third direction. The third direction intersects the plane containing the first extending direction Dx1 and the second extending direction Dx2. The third direction is, for example, the Z-axis direction. The positions of the first wiring 77A and the eighth wiring 77H in the second extending direction Dx2 are the position of the third wiring 77C in the second extending direction Dx2 and the position of the sixth wiring 77F in the second extending direction Dx2. Is between. The first other end Td1 is electrically connected to the first conductive member 21 corresponding to the first element 11E by the connecting member 78s.

As shown in FIG. 63, the first diode DE1 of the first element 11E is electrically connected to the fourth wiring 77D by the connecting member 78a. The first diode DE1 of the third element 13E is electrically connected to the ninth wiring 77I by the connecting member 78b. The ninth wiring 77I overlaps with the fourth wiring 77D in the third direction (for example, the Z-axis direction).

As shown in FIG. 64, the third end Ts3 is electrically connected to the third wiring 77C via the connecting members 78j, 78k and 78l. The first end Ts1 is electrically connected to the third wiring 77C via the connecting members 78i, 78k and 78l.

As shown in FIG. 65, the first conductive member 21 corresponding to the first element 11E and the second element 12E is electrically connected to the first wiring 77A via the connecting member 78q. The first conductive member 21 corresponding to the third element 13E and the fourth element 14E is electrically connected to the eighth wiring 77H via the connecting member 78r.

As shown in FIG. 66, the fourth end Ts4 is electrically connected to the sixth wiring 77F via the connecting members 78n, 78p and 78o. The second end Ts2 is electrically connected to the sixth wiring 77F via the connecting members 78m, 78p and 78o.

As shown in FIG. 67, the first diode DE1 of the second element 12E is electrically connected to the seventh wiring 77G by the connecting member 78e. The first diode DE1 of the fourth element 14E is electrically connected to the tenth wiring 77J by the connecting member 78f. The tenth wiring 77J overlaps with the seventh wiring 77G in the third direction (for example, the Z-axis direction).

As shown in FIG. 68, the fourth other end Td4 is electrically connected to the first conductive member 21 corresponding to the fourth element 14E by the connecting member 78h and the connecting member 78g. The second other end Td2 is electrically connected to the first conductive member 21 corresponding to the second element 12E by the connecting member 78t.

As shown in FIG. 69, the ninth wiring 77I overlaps with the fourth wiring 77D in the third direction (for example, the Z-axis direction). The tenth wiring 77J overlaps with the seventh wiring 77G in the third direction (for example, the Z-axis direction). The third other end Td3 is electrically connected to the first conductive member 21 corresponding to the third element 13E by the connecting members 78d and 78c. In the embodiment, the connecting member 78d may overlap with the first conductive member 21 corresponding to the third element 13E in the Z-axis direction. In this case, the connecting member 78c may be omitted.

As shown in FIG. 70, the third wiring 77C is electrically connected to the connecting members 78l and 78k.

As shown in FIG. 71, the first other end Td1 is electrically connected to the first conductive member 21 corresponding to the first element 11E by the connecting member 78s. The second other end Td2 is electrically connected to the first conductive member 21 corresponding to the second element 12E by the connecting member 78t. The first conductive member 21 corresponding to the first element 11E and the second element 12E is electrically connected to the first wiring 77A by the connecting member 78q. The first conductive member 21 corresponding to the third element 13E and the fourth element 14E is electrically connected to the eighth wiring 77H by the connecting member 78r.

As shown in FIG. 72, the sixth wiring 77F is electrically connected to the connecting members 78p and 78o.

As shown in FIG. 73, the fourth other end Td4 is electrically connected to the first conductive member 21 corresponding to the fourth element 14E by the connecting members 78h and 78g.

In the magnetic devices 187a to 187f, the first diode DE1 may contain a metal silicide.

According to the embodiment, it is possible to provide a magnetic device capable of increasing the density.

In the present specification, "vertical" and "parallel" include not only strict vertical and strict parallel, but also variations in the manufacturing process, for example, and may be substantially vertical and substantially parallel. ..

The embodiments of the present invention have been described above with reference to specific examples. However, the present invention is not limited to these specific examples. For example, the specific configuration of each element such as a conductive member, an element, a laminate, a magnetic layer, a non-magnetic layer, a conductive part, an insulating part, and a control part included in a magnetic device can be appropriately determined from a range known to those skilled in the art. The present invention is included in the scope of the present invention as long as the present invention can be carried out in the same manner by selection and the same effect can be obtained.

A combination of any two or more elements of each specific example to the extent technically possible is also included in the scope of the present invention as long as the gist of the present invention is included.

In addition, all magnetic devices that can be appropriately designed and implemented by those skilled in the art based on the magnetic device described above as an embodiment of the present invention also belong to the scope of the present invention as long as the gist of the present invention is included. ..

In addition, within the scope of the idea of the present invention, those skilled in the art can come up with various modified examples and modified examples, and it is understood that these modified examples and modified examples also belong to the scope of the present invention. ..

Although some embodiments of the present invention have been described, these embodiments are presented as examples and are not intended to limit the scope of the invention. These novel embodiments can be implemented in various other embodiments, and various omissions, replacements, and changes can be made without departing from the gist of the invention. These embodiments and modifications thereof are included in the scope and gist of the invention, and are also included in the scope of the invention described in the claims and the equivalent scope thereof.

11, 12 ... 1st and 2nd magnetic layers,
11E-18E ... 1st-8th elements,
11el, 12el ... 1st and 2nd electrodes,
11m, 11om, 12m, 12om ... Magnetization,
11n, 12n ... 1st and 2nd non-magnetic layers,
11o, 12o ... 1st and 2nd opposed magnetic layers,
21 ... First conductive member,
21a-21e ... 1st-5th parts,
25L, 26L ... Lower end,
25e, 26e ... 1st and 2nd conductive parts,
25i, 26i ... 1st and 2nd insulating parts,
25p, 26p ... partly
27i-27k ... Insulation part,
31, 32 ... 1st, 2nd connection,
35, 36 ... 1st and 2nd semiconductor members,
70 ... Control unit,
70A ... Word line and source line control circuit,
70B ... Bit line control circuit,
75a-75j, 75r ... Conductive part,
77A-77K ... 1st-11th wiring,
78a-78t ... Connection member,
79 ... Semiconductor area,
110-112, 120-124, 130, 130a-130e, 131a-131f, 132a-132c, 133, 134, 140-142, 150, 160, 170-172, 180, 181, 185, 186, 187a-187f ... Magnetic device,
BL1, BL2 ... Bit line,
CL, CL1, CL2 ... Common line,
CN1 to CN4 ... 1st to 4th connecting members,
DA1 ... Anode,
DC1 ... Cathode,
DE1 ... 1st diode,
Dn1, Dn2 ... 1st, 3rd other end,
Dp1, Dp2 ... 2nd, 4th other end,
Dr1, Dr2 ... 1st, 2nd drain,
Drr, Drw ... Drain,
DsL ... Metal Silicide layer,
DsL1 ... Metal layer,
DsL2 ... Silicon layer,
Dx1, Dx2 ... 1st and 2nd extending directions,
Gn1, Gn2 ... 1st and 3rd gates,
Gp1, Gp2 ... 2nd and 4th gates,
Gr1, Gr2 ... 1st and 2nd gates,
R-BL, RBL1 to RBL4, RBL1-L, RBL1-R ... Bit line,
R-WL ... word line,
RWL1 to RWL4 ... Word line,
S1, S2 ... 1st and 2nd laminated bodies,
SL, SL1, SL2 ... Source line,
Sn1, Sn2 ... 1st, 3rd end,
Sp1, Sp2 ... 2nd, 4th end,
Sr1, Sr2 ... 1st and 2nd sources,
Td1 to Td9 ... 1st to 9th other ends,
Tg1 to Tg9 ... Gates 1 to 9,
Tn ... Transistor,
Tn1, Tn2 ... 1st and 3rd transistors,
Tp ... Transistor,
Tp1, Tp2 ... 2nd and 4th transistors,
Tr1 to Tr13 ... 1st to 13th transistors,
Ts1 to Ts9 ... 1st to 9th ends,
W-BL, WBL, WBL1 to WBL4 ... Bit line,
W-WL, WL ... word line,
WL1, WL2 ... word line,
W / R-BL, W / R-BL1, W / R-BL2 ... Bit line,
W / R-WL, W / R-WL1, W / R-WL2, W / R-WL3, W / R-WL4 ... Word line,
ic1 ... 1st current,
rc1, rc2 ... Read current,
sf1, sf2 ... 1st and 2nd sides,
wc1, wc2 ... Write current

Claims (20)

1. With the first element
   With the second element
   A first transistor including a first end, a first other end, and a first gate,
   A second transistor including a second end, a second other end, and a second gate,
   1st to 6th wiring and
   With
   Each of the first element and the second element includes a first conductive member, a first laminate, and a first diode.
   The first conductive member includes a first portion, a second portion, and a third portion, and the third portion is located between the first portion and the second portion.
   The first laminated body includes a first magnetic layer and a first opposed magnetic layer provided between the third portion and the first magnetic layer.
   One of the anode and cathode of the first diode is electrically connected to the first magnetic layer.
   The first other end is electrically connected to the first portion of the first conductive member of the first element.
   The second other end is electrically connected to the first portion of the first conductive member of the second element.
   The first wiring is electrically connected to the second portion of the first conductive member of the first element.
   The second wiring is electrically connected to the first gate and the second gate.
   The third wiring is electrically connected to the first end and the second end.
   The fourth wiring is electrically connected to the anode and the other of the cathode of the first diode of the first element.
   The fifth wiring is electrically connected to the second portion of the first conductive member of the second element.
   The sixth wiring is a magnetic device electrically connected to the anode of the first diode of the second element and the other of the cathode.
2. The first wiring, the third wiring, the fourth wiring, the fifth wiring, and the sixth wiring extend along the first extending direction.
   The magnetic device according to claim 1, wherein the second wiring extends along a second extending direction that intersects the first extending direction.
3. The first wiring, the third wiring, and the fifth wiring extend along the first extending direction.
   The magnetic device according to claim 1, wherein the second wiring, the fourth wiring, and the sixth wiring extend along a second extending direction intersecting with the first extending direction.
4. With the third element
   With the 4th element
   A third transistor including a third end, a third other end, and a third gate,
   A fourth transistor including a second end, a second other end, and a second gate,
   7th to 11th wiring and
   With more
   Each of the third element and the fourth element includes the first conductive member, the first laminate, and the first diode.
   The third other end is electrically connected to the first portion of the first conductive member of the third element.
   The fourth other end is electrically connected to the first portion of the first conductive member of the fourth element.
   The third wiring is further electrically connected to the third end and the fourth end.
   The seventh wiring is electrically connected to the third gate and the fourth gate.
   The eighth wiring is electrically connected to the second portion of the first conductive member of the third element.
   The ninth wiring is electrically connected to the anode and the other of the cathode of the first diode of the third element.
   The tenth wiring is electrically connected to the second portion of the first conductive member of the fourth element.
   The magnetic device according to claim 1, wherein the eleventh wiring is electrically connected to the anode of the first diode of the fourth element and the other of the cathode.
5. The first wiring, the third wiring, the fourth wiring, the fifth wiring, the sixth wiring, the eighth wiring, the ninth wiring, the tenth wiring, and the eleventh wiring are the first extension. Extend along the direction,
   The magnetic device according to claim 4, wherein the second wiring and the seventh wiring extend along a second extending direction intersecting with the first extending direction.
6. At least a part of the first conductive member of the first element is a first portion of the first conductive member of the first element from the first portion of the first conductive member to the second portion of the first conductive member of the first element. In the second direction intersecting the one direction, it overlaps with the first transistor and
   At least a part of the first conductive member of the second element overlaps with the second transistor in the second direction.
   At least a part of the first conductive member of the third element overlaps with the third transistor in the second direction.
   At least a part of the first conductive member of the fourth element overlaps with the fourth transistor in the second direction.
   The direction from the first transistor to the fourth transistor is along the first direction.
   The direction from the third transistor to the second transistor is along the first direction.
   The direction from the third transistor to the first transistor includes a component in the third direction that intersects the plane including the first direction and the second direction.
   The magnetic device according to claim 4, wherein the direction from the second transistor to the fourth transistor includes a component of the third direction.
7. The first wiring, the third wiring, the fifth wiring, the eighth wiring, and the tenth wiring extend along the first extending direction.
   The second wiring, the fourth wiring, the sixth wiring, the seventh wiring, the ninth wiring, and the eleventh wiring extend along a second extending direction intersecting with the first extending direction. The magnetic device according to claim 4.
8. With the first element
   With the second element
   A first transistor including a first end, a first other end, and a first gate,
   A second transistor including a second end, a second other end, and a second gate,
   1st to 7th wiring and
   With
   Each of the first element and the second element includes a first conductive member, a first laminate, and a first diode.
   The first conductive member includes a first portion, a second portion, and a third portion, and the third portion is located between the first portion and the second portion.
   The first laminated body includes a first magnetic layer and a first opposed magnetic layer provided between the third portion and the first magnetic layer.
   One of the anode and cathode of the first diode is electrically connected to the first magnetic layer.
   The first other end is electrically connected to the first portion of the first conductive member of the first element.
   The second other end is electrically connected to the first portion of the first conductive member of the second element.
   The first wiring is electrically connected to the second part of the first conductive member of the first element and the second part of the first conductive member of the second element.
   The second wiring is electrically connected to the first gate and is connected to the first gate.
   The third wiring is electrically connected to the first end.
   The fourth wiring is electrically connected to the anode and the other of the cathode of the first diode of the first element.
   The fifth wiring is electrically connected to the second gate and is connected to the second gate.
   The sixth wiring is electrically connected to the second end and is connected to the second end.
   The seventh wiring is a magnetic device electrically connected to the anode of the first diode of the second element and the other of the cathode.
9. The first wiring, the third wiring, and the sixth wiring extend along the first extending direction.
   The magnetic device according to claim 8, wherein the second wiring, the fourth wiring, the fifth wiring, and the seventh wiring extend along a second extending direction intersecting with the first extending direction.
10. With the third element
    With the 4th element
    A third transistor including a third end, a third other end, and a third gate,
    A fourth transistor including a second end, a second other end, and a second gate,
    8th to 10th wiring and
    With more
    Each of the third element and the fourth element includes the first conductive member, the first laminate, and the first diode.
    The third other end is electrically connected to the first portion of the first conductive member of the third element.
    The fourth other end is electrically connected to the first portion of the first conductive member of the fourth element.
    The second wiring is further electrically connected to the third gate.
    The third wiring is further electrically connected to the third end.
    The fifth wiring is further electrically connected to the fourth gate.
    The sixth wiring is further electrically connected to the fourth end.
    The eighth wiring is electrically connected to the second part of the first conductive member of the third element and the second part of the first conductive member of the fourth element.
    The ninth wiring is electrically connected to the anode and the other of the cathode of the first diode of the third element.
    The magnetic device according to claim 8, wherein the tenth wiring is electrically connected to the anode of the first diode of the fourth element and the other of the cathode.
11. The first wiring, the third wiring, the sixth wiring, and the eighth wiring extend along the first extending direction.
    The second wiring, the fourth wiring, the fifth wiring, the seventh wiring, the ninth wiring, and the tenth wiring extend along a second extending direction intersecting with the first extending direction. The magnetic device according to claim 10.
12. A first element including a first conductive member and a first laminated body, wherein the first conductive member is a first portion between a first portion, a second portion, and the first portion and the second portion. The first laminated body includes a first magnetic layer and a first opposed magnetic layer provided between the third portion and the first magnetic layer. With the element
    A first conductive type first transistor including a first end, a first other end, and a first gate,
    A second conductive type second transistor including a second end, a second other end, and a second gate,
    1st wiring and
    2nd wiring and
    3rd wiring and
    With
    The first other end is electrically connected to the first portion.
    The second other end is electrically connected to the first magnetic layer.
    The first wiring is electrically connected to the second portion and is connected to the second portion.
    The second wiring is electrically connected to the first gate and the second gate, and is connected to the first gate and the second gate.
    The third wiring is a magnetic device electrically connected to the first end and the second end.
13. With more control
    The control unit is electrically connected to the first wiring, the second wiring, and the third wiring.
    The control unit can perform a first write operation and a first read operation.
    In the first writing operation, the control unit supplies a current between the first portion and the second portion via the first transistor with the second wiring selected.
    The magnetism according to claim 12, wherein in the first read operation, the control unit detects a value corresponding to the electric resistance of the first laminated body via the second transistor with the second wiring in a non-selected state. device.
14. The first conductive type third transistor including the third end, the third other end, and the third gate,
    The second conductive type fourth transistor including the fourth end, the fourth other end, and the fourth gate,
    4th wiring and
    With more
    The first element further includes a second laminate.
    The first conductive member includes a fourth portion and a fifth portion, and the fifth portion is located between the second portion and the fourth portion.
    The second laminated body includes a second magnetic layer and a second opposed magnetic layer provided between the fifth portion and the second magnetic layer.
    The third other end is electrically connected to the fourth portion.
    The fourth other end is electrically connected to the second magnetic layer.
    The fourth wiring is electrically connected to the third gate and the fourth gate, and is connected to the third gate and the fourth gate.
    The magnetic device according to claim 12, wherein the third wiring is electrically connected to the third end and the fourth end.
15. With more control
    The control unit is electrically connected to the first wiring, the second wiring, the third wiring, and the fourth wiring.
    The control unit can perform a first write operation, a second write operation, a first read operation, and a second read operation.
    In the first writing operation, the control unit supplies a current between the first portion and the second portion via the first transistor with the second wiring selected.
    In the second writing operation, the control unit supplies a current between the fourth portion and the second portion via the third transistor with the fourth wiring selected.
    In the first read operation, the control unit detects a value corresponding to the electric resistance of the first laminated body via the second transistor with the second wiring in a non-selected state.
    The magnetism according to claim 14, wherein in the second read operation, the control unit detects a value corresponding to the electric resistance of the second laminate via the fourth transistor with the fourth wiring in a non-selected state. device.
16. With the first element
    With the second element
    A first conductive type first transistor including a first end, a first other end, and a first gate,
    A second conductive type second transistor including a second end, a second other end, and a second gate,
    The first conductive type third transistor including the third end, the third other end, and the third gate,
    The second conductive type fourth transistor including the fourth end, the fourth other end, and the fourth gate,
    The first conductive type fifth transistor including the fifth end, the fifth other end, and the fifth gate,
    The first conductive type sixth transistor including the sixth end, the sixth other end, and the sixth gate,
    1st wiring and
    2nd wiring and
    3rd wiring and
    4th wiring and
    5th wiring and
    With
    Each of the first element and the second element includes a first conductive member, a first laminated body, and a second laminated body.
    The first conductive member includes a first portion, a second portion, a third portion, a fourth portion, and a fifth portion, and the first portion is between the first portion and the fourth portion. There are two parts, the third part is between the first part and the second part, and the fifth part is between the second part and the fourth part.
    The first laminated body includes a first magnetic layer and a first opposed magnetic layer provided between the third portion and the first magnetic layer.
    The second laminated body includes a second magnetic layer and a second opposed magnetic layer provided between the fifth portion and the second magnetic layer.
    The first other end is electrically connected to the first portion of the first conductive member of the first element.
    The second other end is electrically connected to the first magnetic layer of the first element and the first magnetic layer of the second element.
    The third other end is electrically connected to the fourth portion of the first conductive member of the first element.
    The fourth other end is electrically connected to the second magnetic layer of the first element and the second magnetic layer of the second element.
    The fifth other end is electrically connected to the first portion of the first conductive member of the second element.
    The sixth other end is electrically connected to the fourth portion of the first conductive member of the second element.
    The first wiring is electrically connected to the second portion of the first conductive member of the first element.
    The second wiring is electrically connected to the first gate, the second gate, and the fifth gate.
    The third wiring is electrically connected to the first end, the second end, the third end, the fourth end, the fifth end, and the sixth end.
    The fourth wiring is electrically connected to the third gate, the fourth gate, and the sixth gate.
    The fifth wiring is a magnetic device electrically connected to the second portion of the first conductive member of the second element.
17. With the third element
    The first conductive type seventh transistor including the seventh end, the seventh other end, and the seventh gate,
    The second conductive type eighth transistor including the eighth end, the eighth other end, and the eighth gate,
    The second conductive type ninth transistor including the ninth end, the ninth other end, and the ninth gate,
    6th wiring and
    7th wiring and
    8th wiring and
    9th wiring and
    With more
    The third element includes the first conductive member, the first laminated body, and the second laminated body.
    The fourth portion of the first conductive member of the first element is electrically connected to the first portion of the first conductive member of the third element.
    The seventh other end is electrically connected to the fourth portion of the first conductive member of the third element.
    The eighth other end is electrically connected to the first magnetic layer of the third element.
    The ninth other end is electrically connected to the second magnetic layer of the third element.
    The sixth wiring is electrically connected to the eighth gate, and is connected to the eighth gate.
    The seventh wiring is electrically connected to the seventh gate and the ninth gate.
    The eighth wiring is electrically connected to the seventh end, the eighth end, and the ninth end.
    The magnetic device according to claim 16, wherein the ninth wiring is electrically connected to the second portion of the first conductive member of the third element.
18. With the first element
    With the second element
    A first conductive type first transistor including a first end, a first other end, and a first gate,
    A second conductive type second transistor including a second end, a second other end, and a second gate,
    The first conductive type third transistor including the third end, the third other end, and the third gate,
    The second conductive type fourth transistor including the fourth end, the fourth other end, and the fourth gate,
    The first conductive type fifth transistor including the fifth end, the fifth other end, and the fifth gate,
    The second conductive type sixth transistor including the sixth end, the sixth other end, and the sixth gate,
    The second conductive type seventh transistor including the seventh end, the seventh other end, and the seventh gate,
    1st wiring and
    2nd wiring and
    3rd wiring and
    4th wiring and
    5th wiring and
    6th wiring and
    7th wiring and
    8th wiring and
    With
    Each of the first element and the second element includes a first conductive member, a first laminated body, and a second laminated body.
    The first conductive member includes a first portion, a second portion, a third portion, a fourth portion, and a fifth portion, and the first portion is between the first portion and the fourth portion. There are two parts, the third part is between the first part and the second part, and the fifth part is between the second part and the fourth part.
    The first laminated body includes a first magnetic layer and a first opposed magnetic layer provided between the third portion and the first magnetic layer.
    The second laminated body includes a second magnetic layer and a second opposed magnetic layer provided between the fifth portion and the second magnetic layer.
    The fourth portion of the first conductive member of the first element is electrically connected to the first portion of the first conductive member of the second element.
    The first other end is electrically connected to the first portion of the first conductive member of the first element.
    The second other end is electrically connected to the first magnetic layer of the first element.
    The third other end is electrically connected to the fourth portion of the first conductive member of the first element and the first portion of the first conductive member of the second element.
    The fourth other end is electrically connected to the second magnetic layer of the first element.
    The fifth other end is electrically connected to the fourth portion of the first conductive member of the second element.
    The sixth other end is electrically connected to the first magnetic layer of the second element.
    The seventh other end is electrically connected to the second magnetic layer of the second element.
    The first wiring is electrically connected to the second portion of the first conductive member of the first element.
    The second wiring is electrically connected to the first gate and the second gate.
    The third wiring is electrically connected to the first end, the second end, the third end, and the fourth end.
    The fourth wiring is electrically connected to the third gate and the fourth gate.
    The fifth wiring is electrically connected to the second portion of the first conductive member of the second element.
    The sixth wiring is electrically connected to the sixth gate and is connected to the sixth gate.
    The seventh wiring is electrically connected to the fifth gate and the seventh gate.
    The eighth wiring is a magnetic device electrically connected to the fifth end, the sixth end, and the seventh end.
19. With the first element
    With the second element
    A first conductive type first transistor including a first end, a first other end, and a first gate,
    A second conductive type second transistor including a second end, a second other end, and a second gate,
    1st wiring and
    2nd wiring and
    3rd wiring and
    4th wiring and
    With
    Each of the first element and the second element includes a first conductive member, a first laminate, and a first diode.
    The first conductive member includes a first portion, a second portion, and a third portion, and the third portion is located between the first portion and the second portion.
    The first laminated body includes a first magnetic layer and a first opposed magnetic layer provided between the third portion and the first magnetic layer.
    One of the anode and cathode of the first diode is electrically connected to the first magnetic layer.
    The first other end is electrically connected to the first portion of the first conductive member of the first element.
    The second other end is electrically connected to the first portion of the first conductive member of the second element.
    The first wiring is electrically connected to the second part of the first conductive member of the first element and the second part of the first conductive member of the second element.
    The second wiring is electrically connected to the first gate and the second gate.
    The third wiring is electrically connected to the first end and the second end.
    The fourth wiring was electrically connected to the other of the anode and the cathode of the first diode of the first element and the other of the anode and the cathode of the first diode of the second element. , Magnetic device.
20. With the first element
    With the second element
    A first conductive type first transistor including a first end, a first other end, and a first gate,
    A second conductive type second transistor including a second end, a second other end, and a second gate,
    1st wiring and
    2nd wiring and
    3rd wiring and
    4th wiring and
    With
    Each of the first element and the second element includes a first conductive member, a first laminate, and a first diode.
    The first conductive member includes a first portion, a second portion, and a third portion, and the third portion is located between the first portion and the second portion.
    The first laminated body includes a first magnetic layer and a first opposed magnetic layer provided between the third portion and the first magnetic layer.
    One of the anode and cathode of the first diode is electrically connected to the first magnetic layer.
    The first other end is electrically connected to the first portion of the first conductive member of the first element and the anode and the other of the cathode of the first diode of the second element.
    The second other end is electrically connected to the other of the anode and the cathode of the first diode of the first element and the first part of the first conductive member of the second element.
    The first wiring is electrically connected to the second portion of the first conductive member of the first element.
    The second wiring is electrically connected to the first gate and the second gate.
    The third wiring is electrically connected to the first end and the second end.
    The fourth wiring is a magnetic device electrically connected to the second portion of the first conductive member of the second element.

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