WO2021149586A1 - Magnetic device - Google Patents
Magnetic device Download PDFInfo
- Publication number
- WO2021149586A1 WO2021149586A1 PCT/JP2021/001081 JP2021001081W WO2021149586A1 WO 2021149586 A1 WO2021149586 A1 WO 2021149586A1 JP 2021001081 W JP2021001081 W JP 2021001081W WO 2021149586 A1 WO2021149586 A1 WO 2021149586A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- wiring
- electrically connected
- gate
- conductive member
- transistor
- Prior art date
Links
- 230000005389 magnetism Effects 0.000 claims 2
- 239000004065 semiconductor Substances 0.000 description 37
- 230000005415 magnetization Effects 0.000 description 18
- 239000002184 metal Substances 0.000 description 17
- 229910052751 metal Inorganic materials 0.000 description 17
- 229910021332 silicide Inorganic materials 0.000 description 12
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 12
- 230000005540 biological transmission Effects 0.000 description 11
- 102000000582 Retinoblastoma-Like Protein p107 Human genes 0.000 description 10
- 108010002342 Retinoblastoma-Like Protein p107 Proteins 0.000 description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- 101100444020 Caenorhabditis elegans dsl-1 gene Proteins 0.000 description 6
- 102000004642 Retinoblastoma-Like Protein p130 Human genes 0.000 description 4
- 108010003494 Retinoblastoma-Like Protein p130 Proteins 0.000 description 4
- 238000009413 insulation Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229910052763 palladium Inorganic materials 0.000 description 3
- 229910052697 platinum Inorganic materials 0.000 description 3
- 101100247438 Arabidopsis thaliana RBL3 gene Proteins 0.000 description 2
- 101100247439 Arabidopsis thaliana RBL4 gene Proteins 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910003321 CoFe Inorganic materials 0.000 description 1
- 229910019236 CoFeB Inorganic materials 0.000 description 1
- 229910052691 Erbium Inorganic materials 0.000 description 1
- 230000005355 Hall effect Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052762 osmium Inorganic materials 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052702 rhenium Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 210000000352 storage cell Anatomy 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/82—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by variation of the magnetic field applied to the device
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/10—Magnetoresistive devices
Definitions
- Embodiments of the present invention relate to magnetic devices.
- a magnetic device using a magnetic layer is applied to a storage device or an arithmetic unit. Higher densities are desired in magnetic devices.
- An embodiment of the present invention provides a magnetic device capable of increasing the density.
- the magnetic device includes a first element, a first conductive type first transistor, a second conductive type second transistor, a first wiring, a second wiring, and a third.
- the first element includes a first conductive member and a first laminated body.
- the first conductive member includes a first portion, a second portion, and a third portion between the first portion and the second portion.
- the first laminated body includes a first magnetic layer and a first opposed magnetic layer provided between the third portion and the first magnetic layer.
- the first transistor includes a first end, a first other end and a first gate.
- the second transistor includes a second end, a second other end and a second gate.
- the first other end is electrically connected to the first portion.
- the second other end is electrically connected to the first magnetic layer.
- the first wiring is electrically connected to the second portion.
- the second wiring is electrically connected to the first gate and the second gate.
- the third wiring is electrically connected to the first end and the second end.
- FIG. 1 is a schematic perspective view illustrating a magnetic device according to the first embodiment.
- 2 (a) and 2 (b) are schematic views illustrating the magnetic device according to the first embodiment.
- 3 (a) to 3 (c) are schematic views illustrating the magnetic device according to the first embodiment.
- FIG. 4 is a schematic perspective view illustrating the magnetic device according to the first embodiment.
- 5 (a) and 5 (b) are schematic views illustrating the magnetic device according to the first embodiment.
- FIG. 6 is a schematic view illustrating the magnetic device according to the first embodiment.
- FIG. 7 is a schematic diagram illustrating the magnetic device according to the first embodiment.
- FIG. 8 is a schematic view illustrating the magnetic device according to the first embodiment.
- FIG. 9 is a schematic perspective view illustrating the magnetic device according to the second embodiment.
- FIGS. 10 (a) and 10 (b) are schematic views illustrating the magnetic device according to the second embodiment.
- 11 (a) and 11 (b) are schematic cross-sectional views illustrating the magnetic device according to the second embodiment.
- FIG. 12 is a schematic cross-sectional view illustrating the magnetic device according to the second embodiment.
- FIG. 13 is a schematic perspective view illustrating the magnetic device according to the second embodiment.
- 14 (a) and 14 (b) are schematic views illustrating the magnetic device according to the third embodiment.
- 15 (a) to 15 (e) are schematic transmission plan views illustrating the magnetic device according to the third embodiment.
- 16 (a) to 16 (f) are schematic transmission plan views illustrating the magnetic device according to the third embodiment.
- 17 (a) to 17 (c) are schematic transmission plan views illustrating the magnetic device according to the third embodiment.
- FIG. 18 is a schematic perspective view illustrating the magnetic device according to the third embodiment.
- FIG. 19 is a schematic perspective view illustrating the magnetic device according to the third embodiment.
- FIG. 20 is a schematic perspective view illustrating the magnetic device according to the fourth embodiment.
- FIG. 21 is a schematic plan view illustrating the magnetic device according to the fourth embodiment.
- FIG. 22 is a schematic plan view illustrating the magnetic device according to the fourth embodiment.
- FIG. 23 is a schematic plan view illustrating the magnetic device according to the fourth embodiment.
- FIG. 24 is a schematic plan view illustrating the magnetic device according to the fourth embodiment.
- FIG. 25 is a schematic perspective view illustrating the magnetic device according to the fourth embodiment.
- FIG. 26 is a schematic plan view illustrating the magnetic device according to the fourth embodiment.
- FIG. 27 is a schematic plan view illustrating the magnetic device according to the fourth embodiment.
- FIG. 28 is a schematic plan view illustrating the magnetic device according to the fourth embodiment.
- FIG. 29 is a schematic plan view illustrating the magnetic device according to the fourth embodiment.
- FIG. 30 is a schematic plan view illustrating the magnetic device according to the fourth embodiment.
- FIG. 31 is a schematic perspective view illustrating the magnetic device according to the fifth embodiment.
- FIG. 32 is a schematic perspective view illustrating the magnetic device according to the sixth embodiment.
- FIG. 33 is a schematic plan view illustrating the magnetic device according to the sixth embodiment.
- FIG. 34 is a schematic plan view illustrating the magnetic device according to the sixth embodiment.
- FIG. 35 is a schematic plan view illustrating the magnetic device according to the sixth embodiment.
- FIG. 36 is a schematic plan view illustrating the magnetic device according to the sixth embodiment.
- FIG. 37 is a schematic plan view illustrating the magnetic device according to the sixth embodiment.
- FIG. 38 is a schematic view illustrating the magnetic device according to the seventh embodiment.
- 39 (a) and 39 (b) are schematic views illustrating the magnetic device according to the seventh embodiment.
- FIG. 40 is a schematic view illustrating the magnetic device according to the seventh embodiment.
- 41 (a) and 41 (b) are schematic views illustrating the magnetic device according to the seventh embodiment.
- 42 (a) to 42 (d) are schematic views illustrating the magnetic device according to the seventh embodiment.
- FIG. 43 is a schematic view illustrating the magnetic device according to the seventh embodiment.
- 44 (a) and 44 (b) are schematic views illustrating the magnetic device according to the seventh embodiment.
- FIG. 46 is a schematic view illustrating the magnetic device according to the seventh embodiment.
- FIG. 47 is a schematic view illustrating the magnetic device according to the eighth embodiment.
- FIG. 48 is a schematic view illustrating the magnetic device according to the eighth embodiment.
- 49 (a) to 49 (e) are schematic views illustrating the magnetic device according to the eighth embodiment.
- FIG. 50 is a schematic view illustrating the magnetic device according to the eighth embodiment.
- 51 (a) to 51 (e) are schematic views illustrating the magnetic device according to the eighth embodiment.
- 52 (a) and 52 (b) are schematic cross-sectional views illustrating a part of the magnetic device according to the embodiment.
- FIG. 46 is a schematic view illustrating the magnetic device according to the seventh embodiment.
- FIG. 47 is a schematic view illustrating the magnetic device according to the eighth embodiment.
- FIG. 48 is a schematic view illustrating the magnetic device according to the eighth embodiment.
- 49 (a) to 49 (e) are schematic views illustrating the magnetic device according to the eighth embodiment.
- FIG. 53 is a schematic view illustrating the magnetic device according to the embodiment.
- FIG. 54 is a schematic view illustrating the magnetic device according to the embodiment.
- FIG. 55 is a schematic view illustrating the magnetic device according to the embodiment.
- FIG. 56 is a schematic view illustrating the magnetic device according to the embodiment.
- FIG. 57 is a schematic view illustrating the magnetic device according to the embodiment.
- FIG. 58 is a schematic view illustrating the magnetic device according to the embodiment.
- FIG. 59 is a schematic view illustrating the magnetic device according to the embodiment.
- FIG. 60 is a schematic plan view illustrating the magnetic device according to the embodiment.
- FIG. 61 is a schematic plan view illustrating the magnetic device according to the embodiment.
- FIG. 62 is a schematic cross-sectional view illustrating the magnetic device according to the embodiment.
- FIG. 63 is a schematic cross-sectional view illustrating the magnetic device according to the embodiment.
- FIG. 64 is a schematic cross-sectional view illustrating the magnetic device according to the embodiment.
- FIG. 65 is a schematic cross-sectional view illustrating the magnetic device according to the embodiment.
- FIG. 66 is a schematic cross-sectional view illustrating the magnetic device according to the embodiment.
- FIG. 67 is a schematic cross-sectional view illustrating the magnetic device according to the embodiment.
- FIG. 68 is a schematic cross-sectional view illustrating the magnetic device according to the embodiment.
- FIG. 69 is a schematic cross-sectional view illustrating the magnetic device according to the embodiment.
- FIG. 70 is a schematic cross-sectional view illustrating the magnetic device according to the embodiment.
- FIG. 71 is a schematic cross-sectional view illustrating the magnetic device according to the embodiment.
- FIG. 72 is a schematic cross-sectional view illustrating the magnetic device according to the embodiment.
- FIG. 73 is a schematic cross-sectional view illustrating the magnetic device according to the embodiment.
- FIG. 1 is a schematic perspective view illustrating a magnetic device according to the first embodiment.
- the magnetic device 110 includes a first element 11E, a first conductive type first transistor Tn1, a second conductive type second transistor Tp1, and a first wiring 77A.
- the second wiring 77B and the third wiring 77C are included.
- the magnetic device 110 may include a control unit 70.
- the first conductive type is one of the n type and the p type.
- the second conductive type is the other of the n type and the p type. In the following, the first conductive type is n-type and the second conductive type is p-type.
- the first element 11E includes the first conductive member 21 and the first laminated body S1.
- the first conductive member 21 includes a first portion 21a, a second portion 21b, and a third portion 21c.
- the third portion 21c is between the first portion 21a and the second portion 21b.
- the first laminated body S1 includes a first magnetic layer 11 and a first opposed magnetic layer 11o.
- the first opposed magnetic layer 11o is between the third portion 21c and the first magnetic layer 11.
- the direction from the first portion 21a to the second portion 21b is defined as the first direction.
- the first direction is the X-axis direction.
- One direction perpendicular to the X-axis direction is defined as the Z-axis direction.
- the direction perpendicular to the X-axis direction and the Z-axis direction is defined as the Y-axis direction.
- the second direction from the third portion 21c to the first magnetic layer 11 intersects the first direction.
- the second direction is, for example, the Z-axis direction.
- the first laminated body S1 further includes a first non-magnetic layer 11n.
- the first non-magnetic layer 11n is between the first opposed magnetic layer 11o and the first magnetic layer 11.
- the electrical resistance of the first laminated body S1 can be changed.
- the electrical resistance of the first laminated body S1 can be changed depending on the direction of the first current ic1 flowing through the first conductive member 21.
- the change in electrical resistance is based, for example, on the magnetoresistive effect.
- the orientation of the magnetization 11 m of the first magnetic layer 11 is substantially fixed.
- the magnetization 11 om of the first opposed magnetic layer 11o can be changed by the first current ic1 flowing through the first conductive member 21.
- the first magnetic layer 11 is, for example, a reference layer.
- the first opposed magnetic layer 11o is a magnetization free layer (or storage layer).
- the first laminated body S1 includes, for example, MTJ (Magnetic Tunnel Junction).
- the direction of the magnetization 11 om of the first opposed magnetic layer 11o changes depending on the direction of the first current ic1 flowing through the first conductive member 21.
- the change in the orientation of the magnetization 11 om is considered to be based on, for example, the Spin Hall effect.
- the first laminated body S1 can be applied as, for example, a storage cell.
- the first laminated body S1 can be applied, for example, as a part of an arithmetic circuit.
- the first element 11E may include the first electrode 11el.
- the first electrode 11el is electrically connected to the first magnetic layer 11.
- the electrical resistance of the first laminated body S1 corresponds to, for example, the electrical resistance between the first electrode 11el and the first conductive member 21.
- the first transistor Tn1 includes a first end Sn1, a first other end Dn1, and a first gate Gn1.
- the first end Sn1 is, for example, one of the source and the drain.
- the first other end Dn1 is, for example, the other of the source and drain.
- the second transistor Tp1 includes a second end Sp1, a second other end Dp1, and a second gate Gp1.
- the second end Sp1 is, for example, one of the source and the drain.
- the second other end Dp1 is, for example, the other of the source and drain.
- the first other end Dn1 is electrically connected to the first portion 21a.
- the first end Dn1 and the first portion 21a are electrically connected by the conductive portion 75a.
- the second other end Dp1 is electrically connected to the first magnetic layer 11.
- the first magnetic layer 11 and the second other end Dp1 are electrically connected by the first connecting member CN1.
- the first wiring 77A is electrically connected to the second portion 21b.
- the conductive portion 75b electrically connects the first wiring 77A and the second portion 21b.
- the second wiring 77B is electrically connected to the first gate Gn1 and the second gate Gn2.
- the third wiring 77C is electrically connected to the first end Sn1 and the second end Sp1.
- the first wiring 77A functions as a bit line W / R-BL for writing and reading.
- the second wiring 77B functions as a word line W / R-WL for writing and reading.
- the third wiring 77C functions as a source line SL.
- one bit line is provided for writing and reading
- one word line is provided as a word line for writing and reading.
- the number of wirings can be reduced as compared with the case where the bit line for writing, the bit line for reading, the word line for writing, and the word line for reading are provided. This makes it possible to provide a magnetic device capable of increasing the density.
- the control unit 70 is electrically connected to the first wiring 77A, the second wiring 77B, and the third wiring 77C.
- the control unit 70 can perform the first write operation and the first read operation.
- the control unit 70 may include, for example, a word line and source line control circuit 70A and a bit line control circuit 70B.
- the word line and source line control circuit 70A is, for example, a column control circuit.
- the bit line control circuit 70B is, for example, a row control circuit.
- the control unit 70 according to the following embodiment may also include a word line and source line control circuit 70A and a bit line control circuit 70B.
- the control unit 70 sets the second wiring 77B (word line W / R-WL) as the selected state (for example, the potential corresponding to “1”) and uses the first transistor Tn1 to make the first.
- a current is supplied between the first portion 21a and the second portion 21b.
- the control unit 70 sets the second wiring 77B (word line W / R-WL) in a non-selected state (for example, the potential corresponding to “0”) via the second transistor Tp1. A value corresponding to the electric resistance of the first laminated body S1 is detected.
- the first transistor Tn1 is used in the writing operation, and the second transistor Tp1 is used in the reading operation.
- wiring can also be used in these operations.
- the first wiring 77A (bit line W / R-BL) may be set to a positive or negative potential (+/-).
- the first current ic1 is oriented from the first portion 21a to the second portion 21b, or from the second portion 21b to the first portion 21a.
- the direction of the magnetization 11 om of the first opposed magnetic layer 11o changes, and the electrical resistance of the first laminated body S1 changes.
- FIG. 2A is a schematic transmission plan view.
- FIG. 2B is a cross-sectional view taken along the line B1-B1'of FIG. 2A.
- FIG. 3A is a cross-sectional view taken along the line A3-A3'of FIG. 2A.
- FIG. 3B is a cross-sectional view taken along the line A2-A2'of FIG. 2A.
- FIG. 3 (c) is a cross-sectional view taken along the line A1-A1'of FIG. 2 (a).
- the insulating portion is appropriately omitted.
- the first laminated body S1, the first conductive member 21, the first transistor Tn1 and the second transistor Tp1 are provided in a region having a size of 4F ⁇ 4F.
- “F” corresponds to, for example, the minimum machining dimension.
- the second direction (for example, the Z-axis direction) from the third portion 21c to the first magnetic layer 11 is the first direction (X-axis) from the first portion 21a to the second portion 21b. Cross the direction).
- the direction from the first end Sn1 to a part of the third wiring 77C is along the second direction (Z-axis direction).
- the direction from the first end Sn1 to the second portion 21b is along the second direction (Z-axis direction).
- the direction from the second end Sp1 to another part of the third wiring 77C is along the second direction (Z-axis direction).
- the direction from the first other end Dn1 to the first portion 21a is along the second direction (Z-axis direction).
- the first connecting member CN1 is provided.
- the first connecting member CN1 electrically connects the first magnetic layer 11 and the second other end Dp1.
- the direction from the second other end Dp1 to the first connecting member CN1 is along the second direction (Z-axis direction).
- the second other end Dp1 is electrically connected to the first magnetic layer 11 of the first laminated body S1 by the conductive portion 75r, the first connecting member CN1, and the first electrode 11el.
- the direction from the first laminated body S1 to a part of the first wiring 77A is along the second direction (Z-axis direction).
- a magnetic device capable of increasing the density can be provided.
- the first other end Dn1 and the first portion 21a are electrically connected by the conductive portion 75a.
- the conductive portion 75a extends, for example, along the Z-axis direction.
- FIG. 4 is a schematic perspective view illustrating the magnetic device according to the first embodiment.
- the magnetic device 111 according to the embodiment is in addition to the first element 11E, the first transistor Tn1, the second transistor Tp1, the first wiring 77A, the second wiring 77B, and the third wiring 77C.
- the configuration described for the magnetic device 110 can be applied to the first transistor Tn1, the second transistor Tp1, the first wiring 77A, the second wiring 77B, and the third wiring 77C.
- the magnetic device 111 will be described with reference to parts different from the magnetic device 110.
- the first element 11E further includes a second laminated body S2 in addition to the first conductive member 21 and the first laminated body S1.
- the first conductive member 21 includes a fourth portion 21d and a fifth portion 21e. There is a fifth portion 21e between the second portion 21b and the fourth portion 21d.
- the second laminated body S2 includes a second magnetic layer 12 and a second opposed magnetic layer 12o provided between the fifth portion 21e and the second magnetic layer 12.
- the second laminated body S2 further includes a second non-magnetic layer 12n. The second non-magnetic layer 12n is located between the second opposed magnetic layer 12o and the second magnetic layer 12.
- the direction of the magnetization 12 om of the second opposed magnetic layer 12o changes according to the direction of the first current ic1 flowing through the first conductive member 21.
- the angle between the direction of the magnetization 12 om and the direction of the magnetization 12 m of the second magnetic layer 12 changes.
- the electrical resistance of the second laminated body S2 changes.
- the first element 11E includes the second electrode 12el.
- the second electrode 12el is electrically connected to the first magnetic layer 12.
- the electrical resistance of the second laminated body S2 corresponds to, for example, the electrical resistance between the second electrode 12el and the first conductive member 21.
- the third transistor Tn2 includes a third end Sn2, a third other end Dn2, and a third gate Gn2.
- the third end Sn2 is, for example, one of the source and the drain.
- the third other end Dn2 is, for example, the other of the source and drain.
- the fourth transistor Tp1 includes a fourth end Sp2, a fourth other end Dp2, and a fourth gate Gp2.
- the fourth end Sp2 is, for example, one of the source and the drain.
- the fourth other end Dp2 is, for example, the other of the source and drain.
- the third other end Dn2 is electrically connected to the fourth portion 21d.
- the third end Dn2 and the fourth portion 21d are electrically connected by the conductive portion 75c.
- the fourth other end Dp2 is electrically connected to the second magnetic layer 12.
- the fourth end Dp2 and the second magnetic layer 12 are electrically connected by the second connecting member CN2.
- the fourth wiring 77D is electrically connected to the third gate Gn2 and the fourth gate Gp2.
- the third wiring 77C is electrically connected to the third end Sn2 and the fourth end Sp2.
- the first wiring 77A functions as a bit line W / R-BL for writing and reading with respect to the first laminated body S1 and the second laminated body S2.
- the second wiring 77B functions as a word line W / R-WL for writing and reading with respect to the first laminated body S1.
- the fourth wiring 77D functions as a word line W / R-WL for writing and reading with respect to the second laminated body S2.
- the third wiring 77C functions as a source line SL.
- the wiring for writing and the wiring for reading are shared. This makes it possible to provide a magnetic device capable of increasing the density.
- the control unit 70 is electrically connected to the first wiring 77A, the second wiring 77B, the third wiring 77C, and the fourth wiring 77D.
- control unit 70 can perform a first write operation, a second write operation, a first read operation, and a second read operation.
- the control unit 70 selects the second wiring 77B (word line W / R-WL for writing and reading) as a selected state, and sets the first portion 21a and the second through the first transistor Tn1. A current is supplied to and from the portion 21b.
- the control unit 70 selects the fourth wiring 77D (word line W / R-WL for writing and reading) in the selected state, and sets the fourth portion 21d and the second through the third transistor Tn2. A current is supplied between the portions 21b.
- the control unit 70 sets the second wiring 77B (word line W / R-WL for writing and reading) in the non-selected state, and sets the second layer S1 via the second transistor Tp1. Detect the value corresponding to the electrical resistance.
- the control unit 70 sets the fourth wiring 77D in the non-selected state and detects a value corresponding to the electric resistance of the second laminated body S2 via the fourth transistor Tp2.
- the control unit 70 may perform the following first write operation, second write operation, and read operation.
- the control unit 70 selects the second wiring 77B and supplies a current between the first portion 21a and the second portion 21b via the first transistor Tn1.
- the control unit 70 selects the fourth wiring 77D and supplies a current between the fourth portion 21d and the second portion 21b via the third transistor Tn2.
- the control unit 70 detects the value corresponding to the potential of the second portion 21b via the second transistor Tp1 and the fourth transistor Tp2 with the second wiring 77B and the fourth wiring 77D in the non-selected state. ..
- FIG. 5A is a schematic transmission plan view.
- 5 (b) is a cross-sectional view taken along the line A1-A1'of FIG. 5 (a).
- FIG. 6 is a cross-sectional view taken along the line B1-B1'of FIG. 5 (a).
- the second direction from the third portion 21c to the first magnetic layer 11 intersects the first direction (X-axis direction) from the first portion 21a to the second portion 21b.
- the second direction is, for example, the Z-axis direction.
- the direction from the fifth portion 21e to the second magnetic layer 12 is along the second direction.
- the direction from the second end Sp1 to a part of the third wiring 77C is along the second direction (Z-axis direction).
- the positions of the second wiring 77B in the first direction are the position of the first portion 21a in the first direction and the position of the fourth portion 21d in the first direction. Is between.
- the position of the fourth wiring 77D in the first direction is between the position of the second wiring 77B in the first direction and the position of the fourth portion 21d in the first direction.
- the position of the third wiring 77C in the first direction is between the position of the second wiring 77B in the first direction and the position of the fourth wiring 77D in the first direction.
- the direction from the first other end Dn1 to the first portion 21a is along the second direction (Z-axis direction).
- the direction from the first end Sn1 to a part of the third wiring 77C is along the second direction (Z-axis direction).
- the direction from the third other end Dn2 to the fourth portion 21d is along the second direction (Z-axis direction).
- the first connecting member CN1 and the second connecting member CN2 are provided. As shown in FIG. 4, the first connecting member CN1 electrically connects the first magnetic layer 11 and the second other end Dp1. As shown in FIG. 4, the second connecting member CN2 electrically connects the second magnetic layer 12 and the fourth other end Dp2.
- the direction from the second wiring 77B to the first connecting member CN1 is along the second direction (Z-axis direction).
- the direction from the fourth wiring 77D to the second connecting member CN2 is along the second direction (Z-axis direction).
- the position of the fourth wiring 77D in the Z-axis direction is between the position of the third gate Gn2 in the Z-axis direction and the position of the first conductive member 21 in the Z-axis direction.
- the position of the fourth wiring 77D in the Z-axis direction is between the position of the third gate Gn2 in the Z-axis direction and the position of the first wiring 77A in the Z-axis direction. It is possible to provide a magnetic device capable of increasing the density.
- FIG. 7 and 8 are schematic views illustrating the magnetic device according to the first embodiment.
- FIG. 7 is a perspective view.
- FIG. 8 is a schematic transmission plan view.
- the magnetic device 112 includes the fifth wiring 77E.
- Other configurations of the magnetic device 112 are similar to, for example, the configuration of the magnetic device 111.
- an example of the fifth wiring 77E will be described.
- the fifth wiring 77E is electrically connected to at least one of the first portion 21a and the fourth portion 21d.
- the first portion 21a is connected to the control unit 70 by the fifth wiring 77E.
- the fourth portion 21d is connected to the control unit 70 by the fifth wiring 77E.
- the fifth wiring 77E connected to the first portion 21a functions as, for example, a bit line R-BL for reading the first laminated body S1.
- the fifth wiring 77E connected to the fourth portion 21d functions as, for example, a bit line R-BL for reading the second laminated body S2.
- wiring is also used in the writing operation. It is possible to provide a magnetic device capable of increasing the density.
- the magnetic device 112 may further include a third connecting member CN3 and a fourth connecting member CN4.
- the third connecting member CN3 electrically connects the fifth wiring 77E and the first portion 21a.
- the fourth connecting member CN4 electrically connects the fifth wiring 77E and the fourth portion 21d.
- the third connecting member CN3 overlaps with the first other end Dn1 in the second direction (Z-axis direction).
- the fourth connecting member CN4 overlaps with the third other end Dn2 in the second direction. It is possible to provide a magnetic device capable of increasing the density.
- the first conductive portion 25e and the second conductive portion 26e which will be described later, may be provided.
- the transistor may be a fin-type transistor (for example, a fin-type FET) described later.
- FIG. 9 is a schematic perspective view illustrating the magnetic device according to the second embodiment.
- the magnetic device 120 according to the embodiment includes a first element 11E, a first conductive portion 25e, and a second conductive portion 26e.
- the magnetic device 120 may include a first transistor Tr1, a second transistor Tr2, a control unit 70, and the like.
- the first element 11E includes the first conductive member 21 and the first laminated body S1.
- the first conductive member 21 includes a first portion 21a, a second portion 21b, and a third portion 21c.
- the third portion 21c is between the first portion 21a and the second portion 21b.
- the first laminated body S1 includes a first magnetic layer 11 and a first opposed magnetic layer 11o.
- the first opposed magnetic layer 11o is provided between the third portion 21c and the first magnetic layer 11.
- the first laminated body S1 may include the first non-magnetic layer 11n.
- the first conductive portion 25e is electrically connected to the first portion 21a.
- the second conductive portion 26e is electrically connected to the second portion 21b.
- the direction from the first conductive portion 25e to the second conductive portion 26e is along the first direction.
- the first direction corresponds to the X-axis direction.
- the first portion 21a is located between a part 25p of the first conductive portion 25e and a part 26p of the second conductive portion 26e in the first direction (X-axis direction).
- the second portion 21b is located between the first portion 21a and a part 26p of the second conductive portion 26e in the first direction (X-axis direction).
- the first portion 21a includes the first side surface sf1.
- the first side surface sf1 intersects the first direction (X-axis direction).
- the second portion 21b includes a second side surface sf2.
- the second side surface sf2 intersects the first direction (X-axis direction).
- the above-mentioned part 25p of the first conductive portion 25e faces the first side surface sf1.
- the above-mentioned part 26p of the second conductive portion 26e faces the second side surface sf2.
- a part of 25p is in contact with the first side surface sf1.
- Part 26p is in contact with the second side surface sf2.
- the first conductive portion 25e and the second conductive portion 26e are connected to the side surface of the first conductive member 21.
- the area of the connection portion can be narrowed.
- a stable connection is possible.
- the magnetic device 120 it is possible to provide a magnetic device capable of increasing the density.
- the magnetic device 120 may include a first insulating portion 25i and a second insulating portion 26i.
- the first insulating portion 25i is located between the first laminated body S1 and the first conductive portion 25e.
- the second insulating portion 26i is located between the first laminated body S1 and the second conductive portion 26e. Stable electrical insulation can be obtained.
- a structure to be the first conductive member 21 and the laminated body S1 is formed.
- the structure includes a laminated film that becomes the laminated body S1.
- This laminated film is etched to obtain the first laminated body S1.
- the film to be the first conductive member 21 is further etched.
- the side surface of the first conductive member 21 is formed.
- At least one of the first conductive portion 25e and the second conductive portion 26e may be electrically connected to the transistor.
- the first conductive portion 25e is electrically connected to the first transistor Tr1
- the second conductive portion 26e is electrically connected to the second transistor Tr2.
- FIG. 10 (a) and 10 (b) are schematic views illustrating the magnetic device according to the second embodiment.
- FIG. 10A is a schematic transmission plan view.
- FIG. 10B is a cross-sectional view.
- the first conductive member 21 is provided between the insulating portion 27i and the insulating portion 27j.
- a first conductive portion 25e is provided between the insulating portion 27i and the first conductive member 21.
- a second conductive portion 26e is provided between the first conductive member 21 and the insulating portion 27j.
- the first conductive member 21 is provided between the insulating portion 27k and the laminated body S1.
- the second transistor Tr2 includes the second source Sr2, the second drain Dr2, and the second gate Gr2.
- the second drain Dr2 and the second conductive portion 26e are electrically connected by the conductive portion 75d.
- the second source Sr2 is electrically connected to the third wiring 77C (source line SL).
- the direction from the second gate Gr2 to the first laminated body S1 is along the Z-axis direction.
- the first conductive portion 25e is electrically connected to the writing bit wire W-BL.
- the first magnetic layer 11 is electrically connected to the read bit wire R-BL.
- the lower end 25L of the first conductive portion 25e and the lower end 26L of the second conductive portion 26e are below the first conductive member 21.
- the transistors (for example, the first transistor Tr1 and the second transistor Tr2) are below the lower end 25L and the lower end 26L.
- FIG. 11 (a) and 11 (b) are schematic cross-sectional views illustrating the magnetic device according to the second embodiment.
- the position of the second gate Gr2 in the X-axis direction is shifted from the position of the first laminated body S1 in the X-axis direction.
- the length of the laminated body S1 in the X-axis direction is longer than the length of the laminated body S1 in the magnetic device 121 in the X-axis direction.
- the first conductive member 21 is provided between the first conductive portion 25e and the second conductive portion 26e. A stable electrical connection can be obtained even when the processing conditions vary.
- FIG. 12 is a schematic cross-sectional view illustrating the magnetic device according to the second embodiment. As shown in FIG. 12, in the magnetic device 123, a plurality of first elements 11E are provided. The configuration described with respect to FIG. 9 is applied to each of the plurality of first elements 11E.
- FIG. 13 is a schematic perspective view illustrating the magnetic device according to the second embodiment.
- the first conductive type first transistor Tn1 is provided as the first transistor Tr1
- the second conductive type second transistor Tp1 is provided as the second transistor Tr2. ..
- wiring can be omitted as described with respect to the first embodiment. It is possible to provide a magnetic device capable of increasing the density.
- FIG. 14 (a) and 14 (b) are schematic views illustrating the magnetic device according to the third embodiment.
- FIG. 14A is a perspective view.
- FIG. 14B is a schematic transmission plan view.
- the magnetic device 130 includes the first element 11E and the first transistor Tr1. As shown in FIG. 14A, the magnetic device 130 may include a control unit 70.
- the first element 11E includes the first conductive member 21 and the first laminated body S1.
- the first conductive member 21 includes a first portion 21a, a second portion 21b, and a third portion 21c.
- the third portion 21c is between the first portion 21a and the second portion 21b.
- the first laminated body S1 includes a first magnetic layer 11 and a first opposed magnetic layer 11o.
- the first opposed magnetic layer 11o is provided between the third portion 21c and the first magnetic layer 11.
- the first laminated body S1 includes a first non-magnetic layer 11n.
- the first transistor Tr1 is a fin type transistor.
- the first transistor Tr1 is a fin type FET (field effect transistor).
- the direction from the first portion 21a to the second portion 21b is along the first direction.
- the first direction corresponds to the X-axis direction.
- the second direction from the third portion 21c to the first magnetic layer 11 intersects the first direction.
- the second direction is, for example, the Z-axis direction.
- the first transistor Tr1 includes the first semiconductor member 35.
- the first semiconductor member 35 extends along the first direction (X-axis direction).
- the direction from at least a part of the first semiconductor member 35 to at least a part of the first conductive member 21 is along the second direction (Z-axis direction).
- the first conductive member 21 overlaps with the first semiconductor member 35 in the Z-axis direction.
- the first semiconductor member 35 is electrically connected to, for example, the first conductive member 21.
- the first connection portion 31 and the second connection portion 32 are provided.
- the second connecting portion 32 electrically connects the first semiconductor member 35 to the first conductive member 21 (in this example, the second portion 21b).
- the first transistor Tr1 controls the supply of current to the first conductive member 21. In one example, the first transistor Tr1 is used to control the measurement (reading operation) of the electrical resistance of the first laminated body S1.
- the first transistor Tr1 has a fin structure, the above operation can be controlled more stably with a small area. Also in the third embodiment, it is possible to provide a magnetic device capable of increasing the density.
- the first transistor Tr1 includes a first source Sr1, a first drain Dr1, and a first gate Gr1.
- the first drain Dr1 is electrically connected to the second portion 21b of the first conductive member 21 via the second connecting portion 32.
- the first source Sr1 is electrically connected to the source line SL.
- the first gate Gr1 extends along the Y-axis direction.
- the first gate Gr1 faces the two sides of the first semiconductor member 35.
- the first gate Gr1 faces the upper surface of the first semiconductor member 35.
- the first gate Gr1 is, for example, a word line WL.
- the first gate Gr1 is electrically connected to, for example, the word line WL.
- the first portion 21a of the first conductive member 21 is connected to the writing bit wire W-BL.
- the first magnetic layer 11 is electrically connected to the read bit wire R-BL.
- the above wiring is electrically connected to the control unit 70.
- the control unit 70 performs a write operation and a read operation.
- 15 (a) to 15 (e) are schematic transmission plan views illustrating the magnetic device according to the third embodiment.
- a plurality of first semiconductor members 35 are provided in the magnetic devices 130a to 130e shown in FIGS. 15A to 15E.
- the position of the center of the first conductive member 21 in the Y-axis direction is substantially the same as the position of the center of the first semiconductor member 35 in the Y-axis direction.
- the first conductive member 21 is provided at symmetrical positions with respect to the positions of the plurality of first semiconductor members 35.
- the planar shape of the first conductive member 21 is a flat circular shape, and the planar shape of the first laminated body S1 is a flat circular shape.
- the planar shape of the first conductive member 21 is a rectangular shape with rounded corners, and the planar shape of the first laminated body S1 is a flat circular shape.
- 16 (a) to 16 (f) are schematic transmission plan views illustrating the magnetic device according to the third embodiment.
- the position of the first semiconductor member 35 in the Y-axis direction (the third direction intersecting the plane including the first direction and the second direction). Is shifted from the position of the center of the first conductive member 21 in the Y-axis direction (third direction).
- the first conductive member 21 is provided at an asymmetrical position with respect to the positions of the plurality of first semiconductor members 35.
- the temperature of the first semiconductor member 35 may rise during the operation of the transistor. For example, as the temperature rises, the temperature of the first conductive member 21 and the like rises. If the first conductive member 21 is provided at an asymmetrical position, the temperature rise in the first conductive member 21 becomes non-uniform in the first conductive member 21. This makes it easier to determine the magnetization 11 om of the first opposed magnetic layer 11o in a stable manner. It becomes easy to obtain stable operation.
- spin characteristics such as the spin diffusion length in the first conductive member 21 decrease as the temperature rises.
- the recording current density acting on the first opposed magnetic layer 11o on the first conductive member 21 can be made non-uniform.
- the inverted portion of the magnetization 11om of the first opposed magnetic layer 11o is likely to be limited.
- the inverting current distribution can be narrowed. This makes it easier to obtain stable operation, for example. For example, a high yield can be obtained.
- the temperature of the first semiconductor member 35 rises, non-uniform stress may be introduced into the first conductive member 21. As a result, a region in which the reversal current density is locally low may be formed in the first conductive member 21. As a result, the magnetization 11 om becomes stable and easily inverted. It becomes easy to obtain stable operation.
- the planar shape of the first conductive member 21 is a flat circular shape, and the planar shape of the first laminated body S1 is a flat circular shape.
- the planar shape of the first conductive member 21 is a rectangular shape with rounded corners, and the planar shape of the first laminated body S1 is a flat circular shape.
- FIGS. 17A to 17C are schematic transmission plan views illustrating the magnetic device according to the third embodiment.
- the first semiconductor member 35 extends in the third direction (for example, the Y-axis direction).
- the third direction intersects a plane that intersects the first and second directions.
- the direction from a part of the first semiconductor member 35 to a part of the first conductive member 21 is along the second direction (Z-axis direction).
- a part of the first conductive member 21 overlaps with the first semiconductor member 35 in the Z-axis direction.
- the position of the first semiconductor member 35 in the X-axis direction is shifted from the position of the center of the first conductive member 21 in the X-axis direction.
- the first conductive member 21 is provided at an asymmetrical position with reference to the positions of the plurality of first semiconductor members 35.
- the first semiconductor member 35 is electrically connected to the first conductive member 21.
- the second laminated body S2 is provided in addition to the first laminated body S1.
- FIG. 18 is a schematic perspective view illustrating the magnetic device according to the third embodiment. As shown in FIG. 18, in the magnetic device 133, the bit line W-BL for writing, the bit line R-BL for reading, the word line W-WL for writing, and the word line R-WL for reading are Provided.
- the writing drain Drw of the first transistor Tr1 is electrically connected to the writing bit line W-BL via the second connecting portion 32.
- the read drain Drr is electrically connected to the read bit line R-BL via the first connection portion 31.
- the writing bit wire W-BL and the first conductive member 21 are electrically connected by the conductive portion 75e.
- the read-out bit wire R-BL and the first conductive member 21 are electrically connected by the conductive portion 75f.
- FIG. 19 is a schematic perspective view illustrating the magnetic device according to the third embodiment.
- the first element 11E, the first transistor Tn1, the second transistor Tp1, the first wiring 77A, the second wiring 77B, and the third wiring 77C are provided in the magnetic device 134.
- the first transistor Tn1 and the second transistor Tp1 are fin type transistors.
- at least one of the first transistor Tn1 and the second transistor Tp1 may include a fin type transistor.
- the first transistor Tn1 includes the second semiconductor member 36.
- the second transistor Tp1 includes a first semiconductor member 35.
- the magnetic device 134 is provided with a first conductive portion 25e and a second conductive portion 26e.
- the first conductive portion 25e is electrically connected to the first portion 21a of the first conductive member 21.
- the second conductive portion 26e is electrically connected to the second portion 21b of the first conductive member 21.
- the first portion 21a is located between a part of the first conductive portion 25e and a part 26p of the second conductive portion 26e in the first direction (X-axis direction).
- the second portion 21b is located between the first portion 21a and a portion 26p of the second conductive portion 26e in the first direction.
- the first conductive member 21 includes, for example, at least one selected from the group consisting of Ta, W, Re, Os, Ir, Pt, Au, Cu, Ag and Pd.
- the thickness of the first conductive member 21 is, for example, 3 nm or more and 10 nm or less (for example, 5 nm).
- At least one of the first magnetic layer 11 and the second magnetic layer 12 includes, for example, at least one selected from the group consisting of Fe and Co.
- These magnetic layers may include a laminated film.
- the laminated film has, for example, a CoFe film (thickness: 2 nm) / Ru film (thickness: 0.8 nm) / Co film / CoFeB film (thickness: 2 nm).
- At least one of the first opposed magnetic layer 11o and the second opposed magnetic layer 12o includes, for example, at least one selected from the group consisting of Fe and Co, and boron.
- the thickness of these magnetic layers is, for example, 1 nm or more and 2 nm or less (for example, 1.6 nm).
- At least one of the first non-magnetic layer 11n and the second non-magnetic layer 12n contains, for example, Mg and oxygen.
- the thickness of these non-magnetic layers is, for example, 1 nm or more and 2 nm or less (for example, 1.4 nm).
- the embodiments include, for example, the following configurations (eg, technical proposals).
- (Structure 1) A first element including a first conductive member and a first laminated body, wherein the first conductive member is a first portion between a first portion, a second portion, and the first portion and the second portion.
- the first laminated body includes a first magnetic layer and a first opposed magnetic layer provided between the third portion and the first magnetic layer.
- a first transistor including a first end, a first other end, and a first gate
- a second transistor including a second end, a second other end, and a second gate, 1st wiring and 2nd wiring and 3rd wiring and With The first other end is electrically connected to the first portion.
- the second other end is electrically connected to the first magnetic layer.
- the first wiring is electrically connected to the second portion and is connected to the second portion.
- the second wiring is electrically connected to the first gate and the second gate, and is connected to the first gate and the second gate.
- the third wiring is a magnetic device electrically connected to the first end and the second end.
- the control unit is electrically connected to the first wiring, the second wiring, and the third wiring.
- the control unit can perform a first write operation and a first read operation.
- the control unit supplies a current between the first portion and the second portion via the first transistor with the second wiring selected.
- the control unit detects a value corresponding to the electric resistance of the first laminated body via the second transistor with the second wiring in a non-selected state, according to the magnetic device according to the configuration 1. ..
- the second direction from the third portion to the first magnetic layer intersects the first direction from the first portion to the second portion.
- the direction from the first end to a part of the third wiring is along the second direction.
- the direction from the first end to a part of the second portion is along the second direction.
- the direction from the second end to another part of the third wiring is along the second direction.
- a first connecting member for electrically connecting the first magnetic layer and the second other end is further provided.
- the first element further includes a second laminate.
- the first conductive member includes a fourth portion and a fifth portion, and the fifth portion is located between the second portion and the fourth portion.
- the second laminated body includes a second magnetic layer and a second opposed magnetic layer provided between the fifth portion and the second magnetic layer.
- the third other end is electrically connected to the fourth portion.
- the fourth other end is electrically connected to the second magnetic layer.
- the fourth wiring is electrically connected to the third gate and the fourth gate, and is connected to the third gate and the fourth gate.
- the control unit is electrically connected to the first wiring, the second wiring, the third wiring, and the fourth wiring.
- the control unit can perform a first write operation, a second write operation, a first read operation, and a second read operation.
- the control unit supplies a current between the first portion and the second portion via the first transistor with the second wiring selected.
- the control unit supplies a current between the fourth portion and the second portion via the third transistor with the fourth wiring selected.
- the control unit detects a value corresponding to the electric resistance of the first laminated body via the second transistor with the second wiring in a non-selected state.
- the control unit detects a value corresponding to the electrical resistance of the second laminated body via the fourth transistor with the fourth wiring in a non-selected state, according to the magnetic device according to the configuration 6. ..
- the control unit is electrically connected to the first wiring, the second wiring, the third wiring, and the fourth wiring.
- the control unit can perform a first write operation, a second write operation, and a read operation.
- the control unit supplies a current between the first portion and the second portion via the first transistor with the second wiring selected.
- the control unit supplies a current between the fourth portion and the second portion via the third transistor with the fourth wiring selected.
- the control unit sets the second wiring and the fourth wiring in a non-selected state, and detects a value corresponding to the potential of the second portion via the second transistor and the fourth transistor.
- the magnetic device according to the configuration 6.
- the second direction from the third portion to the first magnetic layer intersects the first direction from the first portion to the second portion.
- the direction from the fifth portion to the second magnetic layer is along the second direction.
- the direction from the second other end to a part of the third wiring is along the second direction.
- the position of the second wiring in the first direction is between the position of the first portion in the first direction and the position of the fourth portion in the first direction.
- the position of the fourth wiring in the first direction is between the position of the second wiring in the first direction and the position of the fourth portion in the first direction.
- the position of the third wiring in the first direction is between the position of the second wiring in the first direction and the position of the fourth wiring in the first direction, configurations 6 to 8.
- the direction from the first other end to the first portion is along the second direction.
- the direction from the first end to a part of the third wiring is along the second direction.
- the magnetic device according to any one of configurations 1 to 13, wherein the second portion is located between the first portion and the portion of the second conductive portion in the first direction.
- a first element including a first conductive member and a first laminated body, wherein the first conductive member is a first portion between a first portion, a second portion, and the first portion and the second portion.
- the first laminated body includes a first magnetic layer and a first opposed magnetic layer provided between the third portion and the first magnetic layer.
- a first conductive portion electrically connected to the first portion
- a second conductive portion electrically connected to the second portion
- Transistor and With The direction from the first conductive portion to the second conductive portion is along the first direction.
- the first portion is located between a part of the first conductive portion and a part of the second conductive portion in the first direction.
- the second portion is located between the first portion and the portion of the second conductive portion in the first direction.
- a magnetic device in which at least one of the first conductive portion and the second conductive portion is electrically connected to the transistor.
- the first portion includes a first side surface that intersects the first direction.
- the second portion includes a second side surface that intersects the first direction.
- the part of the first conductive portion faces the first side surface, and is opposed to the first side surface. 16.
- a first element including a first conductive member and a first laminated body, wherein the first conductive member is a first portion between a first portion, a second portion, and the first portion and the second portion.
- the first laminated body includes a first magnetic layer and a first opposed magnetic layer provided between the third portion and the first magnetic layer. With the element Fin type first transistor and With The direction from the first part to the second part is along the first direction. The second direction from the third portion to the first magnetic layer intersects the first direction.
- the first transistor includes a first semiconductor member. A magnetic device whose direction from at least a part of the first semiconductor member to at least a part of the first conductive member is along the second direction.
- the first semiconductor member extends along the first direction.
- the position of the first semiconductor member in the third direction intersecting the plane including the first direction and the second direction is shifted from the position of the center of the first conductive member in the third direction.
- the first semiconductor member extends along a third direction intersecting a plane including the first direction and the second direction.
- the first semiconductor member extends in the third direction.
- FIG. 20 is a schematic perspective view illustrating the magnetic device according to the fourth embodiment.
- 21 to 24 are schematic plan views illustrating the magnetic device according to the fourth embodiment. 21 to 24 correspond to a plan view of each layer of the magnetic device.
- the magnetic device 140 includes a first element 11E, a second element 12E, a first transistor Tr1, a second transistor Tr2, a third transistor Tr3, a fourth transistor Tr4, and a fifth transistor Tr5. , 6th transistor Tr6, 1st wiring 77A, 2nd wiring 77B, 3rd wiring 77C, 4th wiring 77D, and 5th wiring 77E.
- the first transistor Tr1 includes a first end Ts1, a first other end Td1, and a first gate Tg1, and is a first conductive type.
- the second transistor Tr2 includes a second end Ts2, a second other end Td2, and a second gate Tg2, and is a second conductive type.
- the third transistor Tr3 includes a third end Ts3, a third other end Td3, and a third gate Tg3, and is a first conductive type.
- the fourth transistor Tr4 includes a fourth end Ts4, a fourth other end Td4, and a fourth gate Tg4, and is a second conductive type.
- the fifth transistor Tr5 includes a fifth end Ts5, a fifth other end Td5, and a fifth gate Tg5, and is a first conductive type.
- the sixth transistor Tr6 includes a sixth end Ts6, a sixth other end Td6, and a sixth gate Tg6, and is a first conductive type.
- the first conductive type is n-type and the second conductive type is p-type.
- At least a part of the first end Ts1 may overlap with at least a part of the third end Ts3.
- At least a part of the second end Ts2 may overlap with at least a part of the fourth end Ts4.
- At least a part of the fifth end Ts5 may overlap with at least a part of the sixth end Ts6.
- the first end Ts1 may be substantially the same as the third end Ts3.
- the second end Ts2 may be substantially the same as the fourth end Ts4.
- the fifth end Ts5 may be substantially the same as the sixth end Ts6.
- each of the first element 11E and the second element 12E includes a first conductive member 21, a first laminated body S1, and a second laminated body S2.
- the first conductive member 21 includes a first portion 21a, a second portion 21b, a third portion 21c, a fourth portion 21d, and a fifth portion 21e. There is a second portion 21b between the first portion 21a and the fourth portion 21d. There is a third portion 21c between the first portion 21a and the second portion 21b. There is a fifth portion 21e between the second portion 21b and the fourth portion 21d.
- the first laminated body S1 includes a first magnetic layer 11 and a first opposed magnetic layer 11o provided between the third portion 21c and the first magnetic layer 11.
- a first non-magnetic layer 11n may be provided between the first opposed magnetic layer 11o and the first magnetic layer 11.
- the second laminated body S2 includes a second magnetic layer 12 and a second opposed magnetic layer 12o provided between the fifth portion 21e and the second magnetic layer 12.
- a second non-magnetic layer 12n may be provided between the second opposed magnetic layer 12o and the second magnetic layer 12.
- the first other end Td1 is electrically connected to the first portion 21a of the first conductive member 21 of the first element 11E.
- this connection is made by the conductive section 75a.
- the second other end Td2 is electrically connected to the first magnetic layer 11 of the first element 11E and the first magnetic layer 11 of the second element 12E. In this example, this connection is made by the first connecting member CN1.
- the third other end Td3 is electrically connected to the fourth portion 21d of the first conductive member 21 of the first element 11E. In this example, this connection is made by the conductive section 75c.
- the fourth other end Td4 is electrically connected to the second magnetic layer 12 of the first element 11E and the second magnetic layer 12 of the second element 12E.
- this connection is made by the second connecting member CN2.
- the fifth other end Td5 is electrically connected to the first portion 21a of the first conductive member 21 of the second element 12E. In this example, this connection is made by the conductive section 75d.
- the sixth other end Td6 is electrically connected to the fourth portion 21d of the first conductive member 21 of the second element 12E. In this example, this connection is made by the conductive section 75e.
- the first wiring 77A is electrically connected to the second portion 21b of the first conductive member 21 of the first element 11E. In this example, this connection is made by the conductive section 75b.
- the first wiring 77A is, for example, a bit line W / R-BL1 for writing and reading.
- the second wiring 77B is electrically connected to the first gate Tg1, the second gate Tg2, and the fifth gate Tg5.
- the second wiring 77B is, for example, a word line W / R-WL1 for writing and reading.
- the third wiring 77C is electrically connected to the first end Ts1, the second end Ts2, the third end Ts3, the fourth end Ts4, the fifth end Ts5, and the sixth end Ts6.
- the third wiring 77C is, for example, a source line SL.
- the first end Ts1, the third end Ts3, the fifth end Ts5 and the sixth end Ts6 are electrically connected for each polarity of the transistor, and the second end Ts2 and the fourth end Ts4 are electrically connected. May be connected.
- the fourth wiring 77D is electrically connected to the third gate Tg3, the fourth gate Tg4, and the sixth gate Tg6.
- the fourth wiring 77D is, for example, a word line W / R-WL2 for writing and reading.
- the fifth wiring 77E is electrically connected to the second portion 21b of the first conductive member 21 of the second element 11E. In this example, this connection is made by the conductive section 75f.
- the fifth wiring 77E is, for example, a bit line W / R-BL1 for writing and reading.
- control unit 70 is electrically connected to the first wiring 77A, the second wiring 77B, the third wiring 77C, the fourth wiring 77D, the fifth wiring 77E, the conductive unit 75b, and the conductive unit 75f.
- the control unit 70 performs a writing operation and a reading operation on the first element 11E and the second element 12E.
- the reading transistors (second transistor Tr2 and fourth transistor Tr4) are shared by the first element 11E and the second element 12E.
- the number of transistors can be reduced. It is possible to provide a magnetic device capable of increasing the density. By sharing the transistor, for example, power consumption can be reduced.
- the second wiring 77B, the third wiring 77C, and the fourth wiring 77D extend in the Y-axis direction.
- the second transistor Tr2 is located between the first transistor Tr1 and the fifth transistor Tr5 in the Y-axis direction.
- the fourth transistor Tr4 is located between the third transistor Tr3 and the sixth transistor Tr6 in the Y-axis direction.
- the first gate Tg1, the second gate Tg2, and the fifth gate Tg5 overlap with the second wiring 77B in the Z-axis direction.
- the third gate Tg3, the fourth gate Tg4, and the sixth gate Tg6 overlap with the fourth wiring 77D in the Z-axis direction.
- the first conductive member 21 of the first element 11E overlaps the first transistor Tr1 and the third transistor Tr3 in the Z-axis direction.
- the first conductive member 21 of the second element 12E overlaps the fifth transistor Tr5 and the sixth transistor Tr6.
- the first laminated body S1 of the first element 11E overlaps with the first gate Tg1 in the Z-axis direction.
- the second laminated body S2 of the first element 11E overlaps with the third gate Tg3 in the Z-axis direction.
- the first laminated body S1 of the second element 12E overlaps with the fifth gate Tg5 in the Z-axis direction.
- the second laminated body S2 of the second element 12E overlaps with the sixth gate Tg6 in the Z-axis direction.
- the first connecting member CN1 overlaps the first magnetic layer 11 of the first element 11E, the second other end Td2, and the first magnetic layer 11 of the second element 12E in the Z-axis direction. ..
- the second connecting member CN2 overlaps the second magnetic layer 12 of the first element 11E, the fourth other end Td4, and the second magnetic layer 12 of the second element 12E in the Z-axis direction.
- at least one of the second transistor Tr2 and the fourth transistor Tr4 may include a region that does not overlap with the first conductive member 21.
- the first wiring 77A and the fifth wiring 77E extend along the X-axis direction.
- FIG. 25 is a schematic perspective view illustrating the magnetic device according to the fourth embodiment.
- 26 to 29 are schematic plan views illustrating the magnetic device according to the fourth embodiment. 26-29 correspond to the plan view of each layer of the magnetic device.
- the third element 13E is provided in addition to the first element 11E and the second element 12E described with respect to the magnetic device 141.
- the fourth element 14E, the fifth element 15E, and the sixth element 16E may be further provided.
- the configuration of the first element 11E and the second element 12E in the magnetic device 141 is the same as the configuration of the first element 11E and the second element 12E in the magnetic device 140.
- the magnetic device 141 includes a third element 13E, a seventh transistor Tr7, an eighth transistor Tr8, a ninth transistor Tr9, a sixth wiring 77F, a seventh wiring 77G, an eighth wiring 77H, and a ninth wiring 77I.
- the seventh transistor Tr7 includes a seventh end Ts7, a seventh other end Td7, and a seventh gate Tg7, and is a first conductive type (for example, n type).
- the eighth transistor Tr8 includes an eighth end Ts8, an eighth other end Td8, and an eighth gate Tg8, and is a second conductive type (for example, p type).
- the ninth transistor Tr9 includes a ninth end Ts9, a ninth other end Td9, and a ninth gate Tg9, and is a second conductive type (for example, p type).
- the second element 13E includes the first conductive member 21, the first laminated body S1, and the second laminated body S2.
- the fourth portion 21d of the first conductive member 21 of the first element 11E is electrically connected to the first portion 21a of the first conductive member 21 of the third element 13E.
- the fourth portion 21d of the first conductive member 21 of the first element 11E may be continuous with the first portion 21a of the first conductive member 21 of the third element 13E.
- the boundary between the fourth portion 21d of the first conductive member 21 of the first element 11E and the first portion 21a of the first conductive member 21 of the third element 13E may be clear or unclear.
- the seventh other end Td7 is electrically connected to the fourth portion 21d of the first conductive member 21 of the third element 13E.
- the eighth other end Td8 is electrically connected to the first magnetic layer 11 of the third element 13E.
- this connection is made by the third connecting member CN3.
- the ninth other end Td9 is electrically connected to the second magnetic layer 12 of the third element 13E. In this example, this connection is made by the fourth connecting member CN4.
- the sixth wiring 77F is electrically connected to the eighth gate Tg8.
- the sixth wiring 77F is, for example, a word line W / R-WL3 for writing and reading.
- the seventh wiring 77G is electrically connected to the seventh gate Tg7 and the ninth gate Tg9.
- the seventh wiring 77G is, for example, a word line W / R-WL4 for writing and reading.
- the eighth wiring 77H is electrically connected to the seventh end Ts7, the eighth end Ts8, and the ninth end Ts9.
- the eighth wiring 77H is, for example, the source line SL2.
- the third wiring 77C is, for example, the source line SL1.
- the ninth wiring 77I is electrically connected to the second portion 21b of the first conductive member 21 of the third element 13E. In this example, this connection is made by the conductive portion 75g.
- the potential of the first portion 21a of the first conductive member 21 of the third element 13E is controlled by the third transistor Tr3.
- the third transistor Tr3 is shared by the first element 11E and the third element 13E. The number of transistors can be reduced. It is possible to provide a magnetic device capable of increasing the density. By sharing the transistor, for example, power consumption can be reduced.
- the fifth wiring 77F, the seventh wiring 77G, and the eighth wiring 77H extend along the Y-axis direction.
- the positions of the fifth transistor Tr5 and the sixth transistor Tr6 in the Y-axis direction are the positions of the second transistor Tr2 and the fourth transistor Tr4 in the Y-axis direction and the Y-axis of the eighth transistor Tr8 and the ninth transistor Tr9. It is between the position in the direction.
- the third transistor Tr3 is between the first transistor Tr1 and the seventh transistor Tr7.
- the 8th gate Tg8 overlaps with the 6th wiring 77F.
- the 7th gate Tg7 and the 9th gate Tg9 overlap with the 7th wiring 77G.
- the 7th end Ts7, the 8th end Ts8, and the 9th end Ts9 overlap with the 8th wiring 77H.
- the first laminated body S1 of the third element 13E overlaps with the sixth wiring 77F in the Z-axis direction.
- the second laminated body S2 of the third element 13E overlaps with the seventh wiring 77G in the Z-axis direction.
- the third connecting member CN3 overlaps the first magnetic layer 11 of the third element 13E and the eighth other end Td8 in the Z-axis direction.
- the fourth connecting member CN4 overlaps the second magnetic layer 12 of the third element 13E and the ninth other end Td9 in the Z-axis direction.
- the first wiring 77A (bit wire W / R-BL1 for writing and reading), the fifth wiring 77E (bit wire W / R-BL2 for writing and reading), and the first wiring 77A.
- the 9 wiring 77I (bit wire W / R-BL3 for writing and reading) extends along the X-axis direction.
- the magnetic device 141 may further include other elements (for example, the fourth element 14E, the fifth element 15E, the sixth element 16E, and the like).
- the fourth element 14E may have the same configuration as the third element 13E, for example.
- the fifth element 15E may have the same configuration as the second element 12E, for example.
- the sixth element 16E may have the same configuration as the third element 13E, for example.
- the second portion 21b of the first conductive member 21 of the fourth element 14E is electrically connected to the writing and reading word lines W / R-WL4 by the conductive portion 75h.
- the fourth portion 21d of the first conductive member 21 of the fourth element 14E is electrically connected to the tenth transistor Tr10.
- the second portion 21b of the first conductive member 21 of the fifth element 15E is electrically connected to the word line W / R-WL5 for writing and reading by the conductive portion 75i.
- the first portion 21a of the first conductive member 21 of the fifth element 15E is electrically connected to the eleventh transistor Tr11.
- the fourth portion 21d of the first conductive member 21 of the fifth element 15E is electrically connected to the twelfth transistor Tr12.
- the second portion 21b of the first conductive member 21 of the sixth element 16E is electrically connected to the writing and reading word lines W / R-WL6 by the conductive portion 75j.
- the fourth portion 21d of the first conductive member 21 of the sixth element 16E is electrically connected to the thirteenth transistor Tr13.
- the tenth transistor Tr10, the eleventh transistor Tr11, the twelfth transistor Tr12, and the thirteenth transistor Tr13 are, for example, n-type.
- the second wiring 77B is electrically connected to the gates of the first gate Tg1, the second gate Tg2, the fifth gate Tg5, and the eleventh transistor Tr11.
- the third wiring 77C includes a first end Ts1, a second end Ts2, a third end Ts3, a fourth end Ts4, a fifth end Ts5, a sixth end Ts6, an end (source) of the eleventh transistor Tr11, and a twelfth end. It is electrically connected to the end (source) of the transistor Tr12.
- the fourth wiring 77D is electrically connected to the gates of the third gate Tg3, the fourth gate Tg4, the sixth gate Tg6, and the twelfth transistor Tr12.
- the seventh wiring 77G is electrically connected to the seventh gate Tg7, the ninth gate Tg9, the gate of the tenth transistor Tr10, and the gate of the thirteenth transistor Tr13.
- the eighth wiring 77H is electrically connected to the seventh end Ts7, the eighth end Ts8, the ninth end Ts9, the end (source) of the tenth transistor Tr10, and the end (source) of the thirteenth transistor Tr13.
- bit line W / R-BL4 for writing and reading is provided corresponding to the fourth element 14E.
- a bit line W / R-BL5 for writing and reading is provided corresponding to the fifth element 15E.
- a bit line W / R-BL6 for writing and reading is provided corresponding to the sixth element 16E.
- FIG. 30 is a schematic plan view illustrating the magnetic device according to the fourth embodiment.
- the seventh element 17E and the eighth element 18E are provided in addition to the first to sixth elements 11E to 16E.
- a bit line W / R-BL7 for writing and reading is provided corresponding to the seventh element 17E.
- a bit line W / R-BL8 for writing and reading is provided corresponding to the eighth element 18E.
- These bit lines extend along the X-axis direction.
- the number of elements provided in the magnetic device is arbitrary.
- FIG. 31 is a schematic perspective view illustrating the magnetic device according to the fifth embodiment.
- the magnetic device 150 according to the embodiment includes the first element 11E, the second element 12E, the first to seventh transistors Tr1 to Tr7, and the first to eighth wirings 77A to 77H.
- the first transistor Tr1 includes a first end Ts1, a first other end Td1, and a first gate Tg1, and is a first conductive type (for example, n type).
- the second transistor Tr2 includes a second end Ts2, a second other end Td2, and a second gate Tg2, and is a second conductive type (for example, p type).
- the third transistor Tr3 includes a third end Ts3, a third other end Td3, and a third gate Tg3, and is a first conductive type.
- the fourth transistor Tr4 includes a fourth end Ts4, a fourth other end Td4, and a fourth gate Tg4, and is a second conductive type.
- the fifth transistor Tr5 includes a fifth end Ts5, a fifth other end Td5, and a fifth gate Tg5, and is a first conductive type.
- the sixth transistor Tr6 includes a sixth end Ts6, a sixth other end Td6, and a sixth gate Tg6, and is a second conductive type.
- the seventh transistor Tr7 includes a seventh end Ts7, a seventh other end Td7, and a seventh gate Tg7, and is of the second conductive type.
- Each of the first element 11E and the second element 12E includes a first conductive member 21, a first laminated body S1, and a second laminated body S2.
- the configurations related to these described above may be applied to the first conductive member 21, the first laminated body S1 and the second laminated body S2 in the magnetic device 150.
- the fourth portion 21d of the first conductive member 21 of the first element 11E is electrically connected to the first portion 21a of the first conductive member 21 of the second element 12E. Also in this example, the fourth portion 21d of the first conductive member 21 of the first element 11E may be continuous with the first portion 21a of the first conductive member 21 of the third element 13E. The boundary between the fourth portion 21d of the first conductive member 21 of the first element 11E and the first portion 21a of the first conductive member 21 of the third element 13E may be clear or unclear.
- the first other end Td1 is electrically connected to the first portion 21a of the first conductive member 21 of the first element 11E.
- the second other end Td2 is electrically connected to the first magnetic layer 11 of the first element 11E.
- the third other end Td3 is electrically connected to the fourth portion 21d of the first conductive member 21 of the first element 11E and the first portion 21a of the first conductive member 21 of the second element 12E.
- the fourth other end Td4 is electrically connected to the second magnetic layer 12 of the first element 11E.
- the fifth other end Td5 is electrically connected to the fourth portion 21d of the first conductive member 21 of the second element 12E.
- the sixth other end Td6 is electrically connected to the first magnetic layer 11 of the second element 12E.
- the seventh other end Td7 is electrically connected to the second magnetic layer 12 of the second element 12E.
- the first wiring 77A is electrically connected to the second portion 21b of the first conductive member 21 of the first element 11E.
- the second wiring 77B is electrically connected to the first gate Tg1 and the second gate Tg2.
- the third wiring 77C is electrically connected to the first end Ts1, the second end Ts2, the third end Ts3, and the fourth end Ts4.
- the fourth wiring 77D is electrically connected to the third gate Tg3 and the fourth gate Tg4.
- the fifth wiring 77E is electrically connected to the second portion 21b of the first conductive member 21 of the second element 12E.
- the sixth wiring 77F is electrically connected to the sixth gate Tg6.
- the seventh wiring 77G is electrically connected to the fifth gate Tg5 and the seventh gate Tg7.
- the eighth wiring 77H is electrically connected to the fifth end Ts5, the sixth end Ts6, and the seventh end Ts7.
- the potential of the first portion 21a of the first conductive member 21 of the third element 13E is controlled by the third transistor Tr3.
- the third transistor Tr3 is shared by the first element 11E and the third element 13E.
- the number of transistors can be reduced. It is possible to provide a magnetic device capable of increasing the density. By sharing the transistor, for example, power consumption can be reduced.
- the configuration described for the magnetic device 141 may be applied to the configuration of each layer of the elements included in the magnetic device 150.
- FIG. 32 is a schematic perspective view illustrating the magnetic device according to the sixth embodiment.
- 33 to 37 are schematic plan views illustrating the magnetic device according to the sixth embodiment. 33 to 37 correspond to a plan view of each layer of the magnetic device.
- the first transistor Tr3 includes a first end Ts1, a first other end Td1 and a first gate Tg1, and is a first conductive type (for example, n type).
- the second transistor Tr2 includes a second end Ts2, a second other end Td3, and a second gate Tg2, and is a second conductive type (for example, p type).
- the third transistor Tr3 includes a third end Ts3, a third other end Td3, and a third gate Tg3, and is a first conductive type.
- the fourth transistor Tr4 includes a fourth end Ts4, a fourth other end Td4, and a fourth gate Tg4, and is a second conductive type.
- At least a part of the first end Ts1 may overlap with at least a part of the third end Ts3. At least a part of the second end Ts2 may overlap with at least a part of the fourth end Ts4.
- the first end Ts1 may be substantially the same as the third end Ts3.
- the second end Ts2 may be substantially the same as the fourth end Ts4.
- Each of the first element 11E, the second element 12E, and the third element 13E includes the first conductive member 21, the first laminated body S1, and the second laminated body S2.
- the configurations related to these described above may be applied to the first conductive member 21, the first laminated body S1 and the second laminated body S2 in the magnetic device 160.
- the first other end Td1 is electrically connected to the first portion 21a of the first conductive member 21 of the first element 11E and the first portion 21a of the first conductive member 21 of the third element 13E. In this example, this connection is made, for example, by the conductive portions 75a and the conductive portions 75d.
- the second other end Td2 is electrically connected to the first magnetic layer 11 of the first element 11E and the first magnetic layer 11 of the second element 12E. In this example, this connection is made by the first connecting member CN1.
- the third other end Td3 is electrically connected to the fourth portion 21d of the first conductive member 21 of the first element 11E and the fourth portion 21d of the first conductive member 21 of the third element 13E.
- this connection is made by the conductive section 75c and the conductive section 75e.
- the fourth other end Td4 is electrically connected to the second magnetic layer 12 of the first element 11E and the second magnetic layer 12 of the second element 12E.
- this connection is made by the second connecting member CN2.
- the first wiring 77A is electrically connected to the second portion 21b of the first conductive member 21 of the first element 11E.
- the second wiring 77B is electrically connected to the first gate Tg1 and the second gate Tg2.
- the third wiring 77C is electrically connected to the first end Ts1, the second end Ts2, the third end Ts3, and the fourth end Ts4.
- the fourth wiring 77D is electrically connected to the third gate Tg3 and the fourth gate Tg4.
- the first wiring 77A is, for example, a bit line W / R-BL1 for writing and reading.
- the fifth wiring 77E is electrically connected to the second portion 21b of the first conductive member 21 of the second element 12E. In this example, this connection is made by the conductive section 75h.
- the fifth wiring 77E is, for example, a bit line W / R-BL2 for writing and reading.
- the sixth wiring 77F is electrically connected to the second portion 21b of the first conductive member 21 of the third element 13E. In this example, this connection is made by the conductive section 75i.
- the sixth wiring 77F is, for example, a bit line W / R-BL3 for writing and reading.
- the first transistor Tr1 sets the potential of the first portion 21a of the first conductive member 21 of the first element 11E and the potential of the first portion 21a of the first conductive member 21 of the third element 13E. Can be controlled.
- the third transistor Tr3 can control the potential of the fourth portion 21d of the first conductive member 21 of the first element 11E and the potential of the fourth portion 21d of the first conductive member 21 of the third element 13E.
- the first transistor Tr1 and the third transistor Tr3 are shared by the first element 11E and the third element 13E.
- the second transistor Tr2 can control the potential of the first magnetic layer 11 of the first element 11E and the potential of the first magnetic layer 11 of the second element 12E.
- the fourth transistor Tr4 can control the potential of the second magnetic layer 12 of the first element 11E and the potential of the second magnetic layer 12 of the second element 12E.
- the second transistor Tr2 and the fourth transistor Tr4 are shared by the first element 11E and the second element 12E. The number of transistors can be reduced. It is possible to provide a magnetic device capable of increasing the density. By sharing the transistor, for example, power consumption can be reduced.
- the conductive portion 75a and the conductive portion 75d may be continuous with each other.
- the conductive portion 75c and the conductive portion 75e may be continuous with each other.
- a transistor Tn for the second element 12E is provided.
- the transistor Tn is a first conductive type.
- a transistor Tp for the third element 13E is provided.
- the transistor Tp is a second conductive type.
- the length of the first laminated body S1 in the X-axis direction is longer than the length of the first laminated body S1 in the Y-axis direction.
- the length of the second laminated body S2 in the X-axis direction is longer than the length of the second laminated body S2 in the Y-axis direction.
- the magnetization 11 om of the first opposing magnetic layer 11o and the magnetization 12 om of the second opposed magnetic layer 12o are in the Y-axis direction in a steady state.
- the length of the first connecting member CN1 in the Y-axis direction is longer than the length of the first connecting member CN1 in the X-axis direction.
- the length of the second connecting member CN2 in the Y-axis direction is longer than the length of the second connecting member CN2 in the X-axis direction.
- a third connecting member CN3 and a fourth connecting member CN4 for the third element 13E may be provided.
- the first wiring 77A (bit wire W / R-BL1 for writing and reading), the fifth wiring 77E (bit wire W / R-BL2 for writing and reading), and the first wiring 77A.
- the 6 wiring 77F (bit wire W / R-BL3 for writing and reading) extends along the X-axis direction.
- the magnetic device 170 includes a first element 11E, a second element 12E, a first transistor Tr1, a second transistor Tr2, a first wiring 77A, a second wiring 77B, and a third wiring 77C. And the fourth wiring 77D.
- the first transistor Tr1 includes a first end Ts1, a first other end Td1, and a first gate Tg1.
- the first transistor Tr1 is a first conductive type (for example, p type) transistor.
- the second transistor Tr2 includes a second end Ts2, a second other end Td2, and a second gate Tg2.
- the second transistor Tr2 is a second conductive type (for example, p type) transistor.
- each of the first element 11E and the second element 12E includes a first conductive member 21, a first laminated body S1, and a first diode DE1.
- the first conductive member 21 includes a first portion 21a, a second portion 21b, and a third portion 21c. There is a third portion 21c between the first portion 21a and the second portion 21b.
- the first laminated body S1 includes a first magnetic layer 11 and a first opposed magnetic layer 11o.
- the first opposed magnetic layer 11o is provided between the third portion 21c and the first magnetic layer 11.
- the first non-magnetic layer 11n is provided between the first opposed magnetic layer 11o and the first magnetic layer 11.
- One of the anode DA1 and the cathode DC1 of the first diode DE1 is electrically connected to the first magnetic layer 11.
- one of the anode DA1 and the cathode DC1 will be referred to as the anode DA1.
- the anode DA1 is laminated with, for example, the first laminated body S1.
- the anode DA1 is in contact with, for example, the first laminated body S1.
- the first other end Td1 is electrically connected to the first portion 21a of the first conductive member 21 of the first element 11E.
- the second other end Td2 is electrically connected to the first portion 21a of the first conductive member 21 of the second element 12E.
- the first wiring 77A is electrically connected to the second portion 21b of the first conductive member 21 of the first element 11E and the second portion 21b of the first conductive member 21 of the second element 12E.
- the second wiring 77B is electrically connected to the first gate Tg1 and the second gate Tg2.
- the third wiring 77C is electrically connected to the first end Ts1 and the second end Ts2.
- the fourth wiring 77D is the other of the anode DA1 and the cathode DC1 of the first diode DE1 of the first element 11E and the other of the anode DA1 and the cathode DC1 of the first diode DE1 of the second element 12E. Is electrically connected to.
- the first wiring 77A is, for example, a bit line WBL1 for writing.
- the second wiring 77B is, for example, a word line WL.
- the third wiring 77C is, for example, a source line SL.
- the fourth wiring 77D is, for example, a bit line RBL1 for reading.
- one of the anode DA1 and the cathode DC1 will be the anode DA1, and the other of the anode DA1 and the cathode DC1 will be the cathode DC1.
- one of the anode DA1 and the cathode DC1 may be the cathode DC1
- the other of the anode DA1 and the cathode DC1 may be the anode DA1.
- the polarity of the voltage applied to the read bit line is such that one of the anode DA1 and the cathode DC1 is the anode DA1. This is opposite to the polarity of the voltage applied to the read bit line when the other of the anode DA1 and the cathode DC1 is the cathode DC1.
- FIG. 40, 41 (a) and 41 (b) are schematic views illustrating the magnetic device according to the seventh embodiment.
- FIG. 41 (a) is a plan view corresponding to the XY plane including the transistor.
- FIG. 41 (b) is a plan view corresponding to the XY plane including the first conductive member 21.
- the first portion 21a of the first element 11E is connected to the first other end Td1.
- the first conductive member 21 of the first element 11E overlaps with the first transistor Tr1 in the second direction (for example, the Z-axis direction). ..
- the second direction intersects the first direction (X-axis direction) from the first portion 21a to the second portion 21b.
- the first portion 21a of the second element 12E is connected to the second other end Td2.
- the first conductive member 21 of the second element 12E overlaps with the second transistor Tr2 in the second direction (for example, the Z-axis direction). ..
- 42 (a) to 42 (d) are schematic views illustrating the magnetic device according to the seventh embodiment. These figures illustrate the operation in the magnetic device 170.
- the writing bit line WBL1 is set to “ON”, the reading bit line RBL1 is set to “OFF”, and the word line WL is set to “OFF”. , "ON”.
- the write current wc1 flows through the first conductive member 21 of the first element 11E and the first transistor Tr1.
- the writing bit line WBL1 is set to “ON”
- the reading bit line RBL1 is set to “OFF”
- the word line WL is set to “OFF”. , "OFF”.
- the write current wc2 flows through the first conductive member 21 of the second element 11E and the second transistor Tr2.
- the bit line WBL1 for writing is set to “OFF”
- the bit line RBL1 for reading is set to “ON”
- the word line WL is set to “ON”. It is set to "ON”.
- the read current rc1 flows through the first transistor Tr1 and the first element 11E (first laminated body S1 and first diode DE1).
- the bit line WBL1 for writing is set to “OFF”
- the bit line RBL1 for reading is set to “ON”
- the word line WL is set to “ON”. It is set to "OFF”.
- the read current rc2 flows through the second transistor Tr2 and the second element 12E (first laminated body S1 and first diode DE1).
- the magnetic device 171 includes a first element 11E, a second element 12E, a first transistor Tr1, a second transistor Tr2, a first wiring 77A, a second wiring 77B, and a third wiring 77C.
- the fourth wiring 77D the third element 13E, the fourth element 14E, the third transistor Tr3, the fourth transistor Tr4, the fifth wiring 77E, the sixth wiring 77F, and the seventh wiring 77G are included.
- the configuration of the first element 11E, the second element 12E, the first transistor Tr1, the second transistor Tr2, the first wiring 77A, the second wiring 77B, the third wiring 77C, and the fourth wiring 77D in the magnetic device 171 is a magnetic device. Similar to that in 170.
- the third transistor Tr3 includes a third end Ts3, a third other end Td3, and a third gate Tg3.
- the third transistor Tr3 is a first conductive type (for example, n type) transistor.
- the fourth transistor Tr4 includes a fourth end Ts4, a fourth other end Td4, and a fourth gate Tg4.
- the fourth transistor Tr4 is a second conductive type (for example, p type) transistor.
- each of the third element 13E and the fourth element 14E includes the first conductive member 21, the first laminated body S1 and the first diode DE1 described above. ..
- the third other end Td3 is electrically connected to the first portion 21a of the first conductive member 21 of the third element 13E.
- the fourth other end Td4 is electrically connected to the first portion 21a of the first conductive member 21 of the fourth element 14E.
- the fifth wiring 77E is electrically connected to the second portion 21b of the first conductive member 21 of the third element 13E and the second portion 21b of the first conductive member 21 of the fourth element 14E.
- the sixth wiring 77F is electrically connected to the third gate Tg3 and the fourth gate Tg4.
- the third wiring 77C is further electrically connected to the third end Ts3 and the fourth end Ts4.
- the seventh wiring 77G is electrically connected to the other of the anode DA1 and the cathode DC1 of the first diode DE1 of the third element 13E and the other of the anode DA1 and the cathode DC1 of the first diode DE1 of the fourth element 14E. ..
- the other of the anode DA1 and the cathode DC1 is the cathode DC1.
- the second wiring 77B is, for example, the word line WL1.
- the fifth wiring 77E is, for example, a bit line WBL2 for writing.
- the sixth wiring 77F is, for example, the word line WL2.
- the seventh wiring 77G is, for example, a bit line RBL2 for reading.
- the magnetic device 171 can perform the same operation as the magnetic device 170.
- FIG. 45A is a plan view corresponding to the XY plane including the transistor.
- FIG. 45B is a plan view corresponding to the XY plane including the first conductive member 21.
- At least a part of the first conductive member 21 of the first element 11E overlaps with the first transistor Tr1 in the second direction (for example, the Z-axis direction). ..
- the second direction intersects the first direction (X-axis direction) from the first portion 21a to the second portion 21b.
- At least a part of the first conductive member 21 of the second element 12E overlaps with the second transistor Tr2 in the second direction (for example, the Z-axis direction).
- At least a part of the first conductive member 21 of the third element 13E overlaps with the third transistor Tr3 in the second direction (for example, the Z-axis direction). .. At least a part of the first conductive member 21 of the fourth element 14E overlaps with the fourth transistor Tr4 in the second direction (for example, the Z-axis direction).
- FIG. 46 is a schematic view illustrating the magnetic device according to the seventh embodiment.
- the magnetic device 172 according to the embodiment also includes the first element 11E, the second element 12E, the first transistor Tr1, the second transistor Tr2, the first wiring 77A, the second wiring 77B, and the third wiring 77C. And the fourth wiring 77D.
- the first transistor Tr1 is a first conductive type transistor
- the second transistor Tr2 is a second conductive type transistor.
- One of the anode DA1 and the cathode DC1 of the first diode DE1 (for example, the anode DA1) is electrically connected to the first magnetic layer 11 (see FIGS. 39 (a) and 39 (b)).
- the description of the same portion as the configuration of the magnetic device 170 will be omitted as appropriate.
- the first other end Td1 is electrically connected to the first portion 21a of the first conductive member 21 of the first element 11E and the other of the anode DA1 and the cathode DC1 of the first diode DE1 of the second element 12E (for example, the cathode DC1).
- the second other end Td2 is electrically connected to the anode DA1 of the first diode DE1 of the first element 11E and the other of the cathode DC1 (for example, the cathode DC1), and the first portion 21a of the first conductive member 21 of the second element 12E. Connected to.
- the first wiring 77A is electrically connected to the second portion 21b of the first conductive member 21 of the first element 11E.
- the second wiring 77B is electrically connected to the first gate Tg1 and the second gate Tg2.
- the third wiring 77C is electrically connected to the first end Ts1 and the second end Ts2.
- the fourth wiring 77D is electrically connected to the second portion 21b of the first conductive member 21 of the second element 12E.
- the first wiring 77A is, for example, the bit line BL1.
- the second wiring 77B is, for example, a word line WL.
- the third wiring 77C is, for example, a source line SL.
- the fourth wiring 77D is, for example, a bit line BL2.
- the read current of one element flows through the first conductive member 21 of the other element.
- FIG. 47 is a schematic view illustrating the magnetic device according to the eighth embodiment.
- the magnetic device 180 includes first to fourth elements 11E to 14E, first to fourth transistors Tr1 to Tr4, and first to eleventh wirings 77A to 77K.
- the first transistor Tr1 includes a first end Ts1, a first other end Td1, and a first gate Tg1.
- the second transistor Tr2 includes a second end Ts2, a second other end Td2, and a second gate Tg2.
- the third transistor Tr3 includes a third end Ts3, a third other end Td3, and a third gate Tg1.
- the fourth transistor Tr4 includes a fourth end Ts4, a fourth other end Td4, and a fourth gate Tg4.
- the conductive type of the second transistor Tr2 may be the same as or different from the conductive type of the first transistor Tr1.
- the conductive type of the fourth transistor Tr4 may be the same as or different from the conductive type of the third transistor Tr3.
- the first to fourth transistors Tr1 to Tr4 are first conductive type (for example, n type) transistors.
- each of the first element 11E, the second element 12E, the third element 13E and the fourth element 14E includes the first conductive member 21, the first laminated body S1 and the first diode DE1 described above. (See FIGS. 39 (a), 39 (b), 44 (a) and 44 (b)).
- One of the anode DA1 and the cathode DC1 of the first diode DE1 (for example, the anode DA1) is electrically connected to the first magnetic layer 11.
- the first other end Td1 is electrically connected to the first portion 21a of the first conductive member 21 of the first element 11E.
- the second other end Td2 is electrically connected to the first portion 21a of the first conductive member 21 of the second element 12E.
- the third other end Td3 is electrically connected to the first portion 21a of the first conductive member 21 of the third element 13E.
- the fourth other end Td4 is electrically connected to the first portion 21a of the first conductive member 21 of the fourth element 14E.
- the first wiring 77A is electrically connected to the second portion 21b of the first conductive member 21 of the first element 11E.
- the second wiring 77B is electrically connected to the first gate Tg1 and the second gate Tg2.
- the third wiring 77C is electrically connected to the first end Ts1, the second end Ts2, the third end Ts3, and the fourth end Ts4.
- the fourth wiring 77D is electrically connected to the anode DA1 of the first diode DE1 of the first element 11E and the other of the cathode DC1 (for example, the cathode DC1).
- the fifth wiring 77E is electrically connected to the second portion 21b of the first conductive member 21 of the second element 12E.
- the sixth wiring 77F is electrically connected to the third gate Tg3 and the fourth gate Tg4.
- the seventh wiring 77G is electrically connected to the anode DA1 of the first diode DE1 of the second element 12E and the other of the cathode DC1 (for example, the cathode DC1).
- the eighth wiring 77H is electrically connected to the second portion 21b of the first conductive member 21 of the third element 13E.
- the ninth wiring 77I is electrically connected to the anode DA1 of the first diode DE1 of the third element 13E and the other of the cathode DC1 (for example, the cathode DC1).
- the tenth wiring 77J is electrically connected to the second portion 21b of the first conductive member 21 of the fourth element 14E.
- the eleventh wiring 77K is electrically connected to the anode DA1 of the first diode DE1 of the fourth element 14E and the other of the cathode DC1 (for example, the cathode DC1).
- the first wiring 77A is, for example, a bit line WBL1 for writing.
- the second wiring 77B is, for example, the word line WL1.
- the third wiring 77C is, for example, a source line SL.
- the fourth wiring 77D is, for example, a bit line RBL1 for reading.
- the fifth wiring 77E is, for example, a bit line WBL2 for writing.
- the sixth wiring 77F is, for example, the word line WL2.
- the seventh wiring 77G is, for example, a bit line WBL2 for writing.
- the eighth wiring 77H is, for example, a bit line WBL3 for writing.
- the ninth wiring 77I is, for example, a bit line RBL3 for reading.
- the tenth wiring 77J is, for example, a bit line WBL4 for writing.
- the eleventh wiring 77K is, for example, a bit line RBL4 for reading.
- FIG. 49A is a plan view corresponding to the XY plane including the transistor.
- FIG. 49B is a plan view corresponding to the XY plane including the first conductive member 21 of the first element 11E and the second element 12E.
- FIG. 49 (c) is a plan view corresponding to the XY plane including the first conductive member 21 of the third element 13E and the fourth element 14E.
- FIG. 49 (d) is a cross-sectional view taken along the ZZ plane including the first element 11E and the second element 12E.
- FIG. 49 (e) is a cross-sectional view taken along the ZZ plane including the third element 13E and the fourth element 14E. In these cross-sectional views, the insulating member is omitted.
- the first portion 21a of the first element 11E is connected to the first other end Td1.
- the first portion 21a of the second element 12E is connected to the second other end Td2.
- the first portion 21a of the third element 13E is connected to the third other end Td3.
- the first portion 21a of the fourth element 14E is connected to the fourth other end Td4.
- At least a part (for example, the first part 21a) of the first conductive member 21 of the first element 11E is in the second direction (for example, the first part 21a). , Z-axis direction), it overlaps with the first transistor Tr1.
- the second direction intersects the first direction (X-axis direction) from the first portion 21a to the second portion 21b.
- At least a part (for example, the first part 21a) of the first conductive member 21 of the second element 12E overlaps with the second transistor Tr2 in the second direction (for example, the Z-axis direction).
- At least a part (for example, the first part 21a) of the first conductive member 21 of the third element 13E is in the second direction (for example, the first part 21a). , Z-axis direction), it overlaps with the third transistor Tr3. At least a part (for example, the first part 21a) of the first conductive member 21 of the fourth element 14E overlaps with the fourth transistor Tr4 in the second direction (for example, the Z-axis direction).
- the direction from the first transistor Tr1 to the third transistor Tr3 is along the first direction (for example, the X-axis direction).
- the direction from the second transistor Tr2 to the fourth transistor Tr4 is along the first direction.
- the direction from the second transistor Tr2 to the first transistor Tr1 includes a component in the third direction.
- the third direction intersects the plane containing the first and second directions.
- the third direction is, for example, the Y-axis direction.
- the direction from the fourth transistor Tr4 to the third transistor Tr3 includes a component of the third direction.
- the positions of the first element 11E in the second direction are the position of the first transistor Tr1 in the second direction and the position of the third element 13E. It is between the position in the second direction.
- the position of the first element 11E in the second direction is between the position of the first transistor Tr1 in the second direction and the position of the fourth element 14E in the second direction.
- the position of the second element 12E in the second direction is between the position of the second transistor Tr2 in the second direction and the position of the third element 13E in the second direction.
- the position of the second element 12E in the second direction is between the position of the second transistor Tr2 in the second direction and the position of the fourth element 14E in the second direction.
- the position in the second direction corresponds to, for example, the position in the height direction.
- FIG. 50 and 51 (a) to 51 (e) are schematic views illustrating the magnetic device according to the eighth embodiment.
- FIG. 50 is a schematic view illustrating the magnetic device 181 according to the embodiment.
- the arrangement of the elements in the magnetic device 181 is different from the arrangement of the elements in the magnetic device 180.
- Other configurations in the magnetic device 181 are similar to those in the magnetic device 180.
- an example of arranging the elements in the magnetic device 181 will be described.
- FIG. 51 (a) is a plan view corresponding to the XY plane including the transistor.
- FIG. 51 (b) is a plan view corresponding to the XY plane including the first conductive member 21 of the first element 11E and the second element 12E.
- FIG. 51 (c) is a plan view corresponding to the XY plane including the first conductive member 21 of the third element 13E and the fourth element 14E.
- FIG. 51 (d) is a cross-sectional view taken along the ZZ plane including the first element 11E and the third element 13E.
- FIG. 51 (e) is a cross-sectional view taken along the ZZ plane including the second element 12E and the fourth element 14E. In these cross-sectional views, the insulating member is omitted.
- At least a part (for example, the first part 21a) of the first conductive member 21 of the first element 11E is in the second direction (for example, the first part 21a). , Z-axis direction), it overlaps with the first transistor Tr1.
- at least a part (for example, the first part 21a) of the first conductive member 21 of the second element 12E overlaps with the second transistor Tr2 in the second direction.
- At least a part (for example, the first part 21a) of the first conductive member 21 of the third element 13E is in the second direction. It overlaps with the third transistor Tr3.
- at least a part (for example, the first part 21a) of the first conductive member 21 of the fourth element 14E overlaps with the fourth transistor Tr4 in the second direction.
- the direction from the first transistor Tr1 to the fourth transistor Tr4 is along the first direction (X-axis direction).
- the direction from the third transistor Tr3 to the second transistor Tr2 is along the first direction.
- the direction from the third transistor Tr3 to the first transistor Tr1 includes a component of the third direction.
- the third direction intersects the plane containing the first and second directions.
- the third direction is, for example, the Y-axis direction.
- the direction from the second transistor Tr2 to the fourth transistor Tr4 includes a component in the third direction.
- the positions of the first element 11E in the second direction are the position of the first transistor Tr1 in the second direction and the position of the third element 13E in the second direction. And between.
- the position of the second element 12E in the second direction is between the position of the second transistor Tr2 in the second direction and the position of the fourth element 14E in the second direction. ..
- the magnetic device 181 for example, it is easier to suppress interference between the densities of a plurality of elements as compared with the magnetic device 180. For example, it is easy to increase the density of a plurality of elements.
- the first diode DE1 includes, for example, a metal silicide layer DsL.
- the metal silicide layer DsL contains, for example, at least one selected from the group consisting of Ni, Al, Au, Pt, Er, Co, Pd, Ti and B, and silicon.
- the first diode DE1 corresponds to, for example, a Schottky diode.
- the shape of the first diode DE1 in the XY plane may be substantially the same as the shape of the first laminated body S1 in the XY plane.
- Metal silicide tends to have a large stress.
- the structure changes from the structure of the material from which the metal silicide is based. This causes a large stress.
- the stress of the metal silicide layer DsL of the first diode DE1 is applied to the first laminated body S1.
- the magnetization of the magnetic layer contained in the first laminated body S1 can be easily controlled by anisotropy caused by stress. For example, in the first laminated body S1 to which the in-plane magnetization arrangement is applied, stable magnetization can be easily obtained.
- the first laminated body S1 is miniaturized. For example, it becomes easy to obtain a large-capacity magnetic device.
- the melting points of Ni, Co, Pt and Pd are relatively close to the process temperature at the time of forming the first laminated body S1. Since the metal silicide layer DsL contains these materials, a high yield can be easily obtained.
- the metal silicide layer DsL of the first diode DE1 may include a plurality of metal layers DsL1 and a plurality of silicon layers DsL2.
- One of the plurality of metal layers DsL1 is between one of the plurality of silicon layers DsL2 and another one of the plurality of silicon layers DsL2.
- One of the plurality of silicon layers DsL2 is between one of the plurality of metal layers DsL1 and another one of the plurality of metal layers DsL1.
- Silicide is formed by the plurality of metal layers DsL1 and the plurality of silicon layers DsL2. For example, stable rectification characteristics can be easily obtained.
- the first diode DE1 may contain the metal silicide. It becomes easy to obtain stable characteristics, and it is possible to provide a magnetic device capable of increasing the density.
- the configurations of the magnetic devices 185 and 186 can be applied to any magnetic device according to the seventh and eighth embodiments.
- FIG. 53 is a schematic view illustrating the magnetic device according to the embodiment.
- the magnetic device 187a includes a first element 11E, a second element 12E, a first transistor Tr1, a second transistor Tr2, and first to sixth wirings 77A to 77F.
- the first transistor Tr1 includes a first end Ts1, a first other end Td1, and a first gate Tg1.
- the second transistor Tr2 includes a second end Ts2, a second other end Td2, and a second gate Tg2.
- the conductive type of the second transistor Tr2 may be the same as or different from the conductive type of the first transistor Tr1.
- each of the first element 11E and the second element 12E includes the first conductive member 21, the first laminated body S1 and the first diode DE1 described above (FIGS. 39 (a) and 39 (FIG. 39) and FIG. 39 (FIG. 39). b) See).
- One of the anode DA1 and the cathode DC1 of the first diode DE1 (for example, the anode DA1) is electrically connected to the first magnetic layer 11.
- the first other end Td1 is electrically connected to the first portion 21a of the first conductive member 21 of the first element 11E.
- the second other end Td2 is electrically connected to the first portion 21a of the first conductive member 21 of the second element 12E.
- the first wiring 77A is electrically connected to the second portion 21b of the first conductive member 21 of the first element 11E.
- the second wiring 77B is electrically connected to the first gate Tg1 and the second gate Tg2.
- the third wiring 77C is electrically connected to the first end Ts1 and the second end Ts2.
- the fourth wiring 77D is electrically connected to the anode DA1 of the first diode DE1 of the first element 11E and the other of the cathode DC1 (for example, the cathode DC1).
- the fifth wiring 77E is electrically connected to the second portion 21b of the first conductive member 21 of the second element 12E.
- the sixth wiring 77F is electrically connected to the anode DA1 of the first diode DE1 of the second element 12E and the other of the cathode DC1 (for example, the cathode DC1).
- the extending directions of the first wiring 77A, the third wiring 77C, the fourth wiring 77D, the fifth wiring 77E, and the sixth wiring 77F are the first extending directions Dx1 (for example, the Y-axis direction and X). Extends along one of the axial directions).
- the second wiring 77B extends along a second extending direction Dx2 (eg, the other in the Y-axis direction and the X-axis direction) that intersects the first extending direction Dx1.
- the plane including the first extending direction Dx1 and the second extending direction Dx2 intersects the Z-axis direction.
- the plane including the first extending direction Dx1 and the second extending direction Dx2 is, for example, perpendicular to the Z-axis direction.
- the first wiring 77A is, for example, a bit line WBL1 for writing.
- the second wiring 77B is, for example, a word line WL.
- the third wiring 77C is, for example, a source line SL.
- the fourth wiring 77D is, for example, a bit line RBL1 for reading.
- the fifth wiring 77E is, for example, a bit line WBL2 for writing.
- the sixth wiring 77F is, for example, a bit line RBL2 for reading.
- FIG. 54 is a schematic view illustrating the magnetic device according to the embodiment.
- the magnetic device 187b according to the embodiment also includes the first element 11E, the second element 12E, the first transistor Tr1, the second transistor Tr2, and the first to sixth wirings 77A to 77F. ..
- the electrical connection of these elements in the magnetic device 187b is the same as the electrical connection in the magnetic device 187a.
- the extending direction of the wiring in the magnetic device 187a is different from the extending direction of the wiring in the magnetic device 187a.
- the first wiring 77A, the third wiring 77C, and the fifth wiring 77E extend along the first extending direction Dx1 (for example, one of the Y-axis direction and the X-axis direction).
- the second wiring 77B, the fourth wiring 77D, and the sixth wiring 77F extend along the second extending direction Dx2 (for example, the other in the Y-axis direction and the X-axis direction) intersecting the first extending direction Dx1.
- the first wiring 77A is, for example, a bit line WBL1 for writing.
- the second wiring 77B is, for example, a word line WL.
- the third wiring 77C is, for example, a source line SL.
- the fourth wiring 77D is, for example, a bit line RBL1 for reading.
- the fifth wiring 77E is, for example, a bit line WBL2 for writing.
- the sixth wiring 77F is, for example, a bit line RBL2 for reading.
- FIG. 55 is a schematic view illustrating the magnetic device according to the embodiment.
- the magnetic device 187c according to the embodiment is in addition to the first element 11E, the second element 12E, the first transistor Tr1, the second transistor Tr2, and the first to sixth wirings 77A to 77F.
- the configurations of the first element 11E, the second element 12E, the first transistor Tr1, the second transistor Tr2, and the first to sixth wirings 77A to 77F are the same as those in the magnetic device 187a, for example. good.
- the magnetic device 187c may be substantially similar to the magnetic device 180.
- the third transistor Tr3 includes a third end Ts3, a third other end Td3, and a third gate Tg3.
- the fourth transistor Tr4 includes a fourth end Ts4, a fourth other end Td4, and a fourth gate Tg4.
- the conductive type of the third transistor Tr3 and the fourth transistor Tr4 may be the same as or different from the conductive type of the first transistor Tr1.
- each of the third element 13E and the fourth element 14E includes the first conductive member 21, the first laminated body S1 and the first diode DE1 described above (FIGS. 44 (a) and 44 (FIG. 44). b) See).
- One of the anode DA1 and the cathode DC1 of the first diode DE1 (for example, the anode DA1) is electrically connected to the first magnetic layer 11.
- the third other end Td3 is electrically connected to the first portion 21a of the first conductive member 21 of the third element 13E.
- the fourth other end Td4 is electrically connected to the first portion 21a of the first conductive member 21 of the fourth element 14E.
- the third wiring 77C is further electrically connected to the third end Ts3 and the fourth end Ts4.
- the seventh wiring 77G is electrically connected to the third gate Tg3 and the fourth gate Tg4.
- the eighth wiring 77H is electrically connected to the second portion 21b of the first conductive member 21 of the third element 13E.
- the ninth wiring 77I is electrically connected to the other of the anode DA1 and the cathode DC1 of the first diode DE1 of the third element 13E.
- the tenth wiring 77J is electrically connected to the second portion 21b of the first conductive member 21 of the fourth element 14E.
- the eleventh wiring 77K is electrically connected to the other of the anode DA1 and the cathode DC1 of the first diode DE1 of the fourth element 14E.
- 77K extends along the first extending direction Dx1 (for example, one of the Y-axis direction and the X-axis direction).
- the second wiring 77B and the seventh wiring 77G extend along the second extending direction Dx2 (for example, the other in the Y-axis direction and the X-axis direction) intersecting the first extending direction Dx1.
- the first wiring 77A is, for example, a bit line WBL1 for writing.
- the second wiring 77B is, for example, the word line WL1.
- the third wiring 77C is, for example, a source line SL.
- the fourth wiring 77D is, for example, a bit line RBL1 for reading.
- the fifth wiring 77E is, for example, a bit line WBL2 for writing.
- the sixth wiring 77F is, for example, a bit line RBL2 for reading.
- the seventh wiring 77G is, for example, the word line WL2.
- the eighth wiring 77H is, for example, a bit line WBL3 for writing.
- the ninth wiring 77I is, for example, a bit line RBL3 for reading.
- the tenth wiring 77J is, for example, a bit line WBL4 for writing.
- the eleventh wiring 77K is, for example, a bit line WBL4 for reading.
- FIG. 56 is a schematic view illustrating the magnetic device according to the embodiment.
- the magnetic device 187d according to the embodiment also includes the first to fourth elements 11E to 14E, the first to fourth transistors Tr1 to TR4, and the first to eleventh wirings 77A to 77K.
- the electrical connection relationship between the transistor and the wiring is the same as that in the magnetic device 187c.
- the extending direction of the wiring in the magnetic device 187d is different from the extending direction of the wiring in the magnetic device 187c.
- the first wiring 77A, the third wiring 77C, the fifth wiring 77E, the eighth wiring 77H, and the tenth wiring 77J have the first extending direction Dx1 (for example, the Y-axis direction and the X-axis direction). Extends along one).
- the second wiring 77B, the fourth wiring 77D, the sixth wiring 77F, the seventh wiring 77G, the ninth wiring 77I, and the eleventh wiring 77K have a second extending direction Dx2 (for example, the Y axis) that intersects the first extending direction Dx1. Extends along the direction (the other in the direction and the X-axis direction).
- the first wiring 77A is, for example, a bit line WBL1 for writing.
- the second wiring 77B is, for example, the word line WL1.
- the third wiring 77C is, for example, a source line SL.
- the fourth wiring 77D is, for example, a word line RWL1 for reading.
- the fifth wiring 77E is, for example, a bit line WBL2 for writing.
- the sixth wiring 77F is, for example, a word line RWL2 for reading.
- the seventh wiring 77G is, for example, the word line WL2.
- the eighth wiring 77H is, for example, a bit line WBL3 for writing.
- the ninth wiring 77I is, for example, a word line RWL3 for reading.
- the tenth wiring 77J is, for example, a bit line WBL4 for writing.
- the eleventh wiring 77K is, for example, a word line RWL4 for reading.
- FIG. 57 is a schematic view illustrating the magnetic device according to the embodiment.
- the first portion 21a of the first element 11E is connected to the first other end Td1.
- the first portion 21a of the second element 12E is connected to the second other end Td2.
- the first portion 21a of the third element 13E is connected to the third other end Td3.
- the first portion 21a of the fourth element 14E is connected to the fourth other end Td4.
- FIG. 58 is a schematic view illustrating the magnetic device according to the embodiment.
- the magnetic device 187e according to the embodiment includes a first element 11E, a second element 12E, a first transistor Tr1, a second transistor Tr2, and first to seventh wirings 77A to 77G.
- the first transistor Tr1 includes a first end Ts1, a first other end Td1, and a first gate Tg1.
- the second transistor Tr2 includes a second end Ts2, a second other end Td2, and a second gate Tg2.
- the conductive type of the second transistor Tr2 may be the same as or different from the conductive type of the first transistor Tr1.
- each of the first element 11E and the second element 12E includes the first conductive member 21, the first laminated body S1 and the first diode DE1 described above (FIGS. 39 (a) and 39 (FIG. 39) and FIG. 39 (FIG. 39). b) See).
- One of the anode DA1 and the cathode DC1 of the first diode DE1 (for example, the anode DA1) is electrically connected to the first magnetic layer 11.
- the first other end Td1 is electrically connected to the first portion 21a of the first conductive member 21 of the first element 11E.
- the second other end Td2 is electrically connected to the first portion 21a of the first conductive member 21 of the second element 12E.
- the first wiring 77A is electrically connected to the second portion 21b of the first conductive member 21 of the first element 11E and the second portion 21b of the first conductive member 21 of the second element 12E.
- the second wiring 77B is electrically connected to the first gate Tg1.
- the third wiring 77C is electrically connected to the first end Ts1.
- the fourth wiring 77D is electrically connected to the anode DA1 of the first diode DE1 of the first element 11E and the other of the cathode DC1 (for example, the cathode DC1).
- the fifth wiring 77E is electrically connected to the second gate Tg2.
- the sixth wiring 77F is electrically connected to the second end Ts2.
- the seventh wiring 77G is electrically connected to the anode DA1 of the first diode DE1 of the second element 12E and the other of the cathode DC1 (for example, the cathode DC1).
- the first wiring 77A, the third wiring 77C, and the sixth wiring 77F extend along the first extending direction Dx1 (for example, one of the Y-axis direction and the X-axis direction).
- the second wiring 77B, the fourth wiring 77D, the fifth wiring 77E, and the seventh wiring 77G have a second extending direction Dx2 (for example, the other in the Y-axis direction and the X-axis direction) intersecting with the first extending direction Dx1. Extend along.
- the first wiring 77A is, for example, a common line CL.
- the second wiring 77B is, for example, the word line WL1.
- the third wiring 77C is, for example, the source line SL1 (or the bit line WBL1 for writing).
- the fourth wiring 77D is, for example, a bit line RBL1-L for reading.
- the fifth wiring 77E is, for example, the word line WL2.
- the sixth wiring 77F is, for example, a source line SL2 (or a bit line WBL2 for writing).
- the seventh wiring 77G is, for example, a bit line RBL1-R for reading.
- FIG. 59 is a schematic view illustrating the magnetic device according to the embodiment.
- the magnetic device 187f according to the embodiment is in addition to the first element 11E, the second element 12E, the first transistor Tr1, the second transistor Tr2, and the first to seventh wirings 77A to 77G.
- the configurations of the first element 11E, the second element 12E, the first transistor Tr1, the second transistor Tr2, and the first to seventh wirings 77A to 77G are the same as those in the magnetic device 187e, for example. good.
- the third transistor Tr3 includes a third end Ts3, a third other end Td3, and a third gate Tg3.
- the fourth transistor Tr4 includes a fourth end Ts4, a fourth other end Td4, and a fourth gate Tg4.
- the conductive type of the third transistor Tr3 and the fourth transistor Tr4 may be the same as or different from the conductive type of the first transistor Tr1.
- each of the third element 13E and the fourth element 14E includes the first conductive member 21, the first laminated body S1 and the first diode DE1 described above (FIGS. 44 (a) and 44 (FIG. 44). b) See).
- One of the anode DA1 and the cathode DC1 of the first diode DE1 (for example, the anode DA1) is electrically connected to the first magnetic layer 11.
- the third other end Td3 is electrically connected to the first portion 21a of the first conductive member 21 of the third element 13E.
- the fourth other end Td4 is electrically connected to the first portion 21a of the first conductive member 21 of the fourth element 14E.
- the first wiring 77A is electrically connected to the second portion 21b of the first conductive member 21 of the first element 11E and the second portion 21b of the first conductive member 21 of the second element 12E.
- the second wiring 77B is further electrically connected to the third gate Tg3 in addition to the first gate Tg1.
- the third wiring 77C is further electrically connected to the third end Ts3 in addition to the first end Ts1.
- the fourth wiring 77D is electrically connected to the anode DA1 of the first diode DE1 of the first element 11E and the other of the cathode DC1 (for example, the cathode DC1).
- the fifth wiring 77E is further electrically connected to the fourth gate Tg4 in addition to the second gate Tg2.
- the sixth wiring 77F is further electrically connected to the fourth end Ts4 in addition to the second end Ts2.
- the seventh wiring 77G is electrically connected to the anode DA1 of the first diode DE1 of the second element 12E and the other of the cathode DC1 (for example, the cathode DC1).
- the eighth wiring 77H is electrically connected to the second portion 21b of the first conductive member 21 of the third element 13E and the second portion 21b of the first conductive member 21 of the fourth element 14E.
- the ninth wiring 77I is electrically connected to the anode DA1 of the first diode DE1 of the third element 13E and the other of the cathode DC1 (for example, the cathode DC1).
- the tenth wiring 77J is electrically connected to the other of the anode DA1 and the cathode DC1 (for example, the cathode DC1) of the first diode DE1 of the fourth element 14E.
- the first wiring 77A, the third wiring 77C, the sixth wiring 77F, and the eighth wiring 77H extend along the first extending direction Dx1 (for example, one of the Y-axis direction and the X-axis direction).
- the second wiring 77B, the fourth wiring 77D, the fifth wiring 77E, the seventh wiring 77G, the ninth wiring 77I, and the tenth wiring 77J intersect the first extending direction Dx1 with the second extending direction Dx2 (for example, the Y axis). Extends along the direction (the other in the direction and the X-axis direction).
- the first wiring 77A is, for example, the common line CL1.
- the second wiring 77B is, for example, the word line WL1.
- the third wiring 77C is a source line SL1 (or a bit line WBL1 for writing).
- the fourth wiring 77D is, for example, a bit line RBL1-L for reading.
- the fifth wiring 77E is, for example, the word line WL2.
- the sixth wiring 77F is, for example, a source line SL2 (or a bit line WBL2 for writing).
- the seventh wiring 77G is, for example, a bit line RBL1-R for reading.
- the eighth wiring 77H is, for example, the common line CL2.
- the ninth wiring 77I is, for example, a bit line RBL2-L for reading.
- the tenth wiring 77J is, for example, a bit line RBL2-L for reading.
- 60 and 61 are schematic plan views illustrating the magnetic device according to the embodiment.
- 62 to 73 are schematic cross-sectional views illustrating the magnetic device according to the embodiment.
- FIG. 60 is a plan view of a plane including a transistor (semiconductor region).
- FIG. 61 is a plan view when some of the components are transparent. These planes are substantially perpendicular to the Z-axis direction.
- 62 to 68 show the X1-X1 line, X2-X2 line, X3-X3 line, X4-X4 line, X5-X5 line, X6-X6 line, and X7-X7 line of FIGS. 60 and 61.
- It is a cross-sectional view along. 69 to 73 are cross-sectional views taken along the lines Y1-Y1, Y2-Y2, Y3-Y3, Y4-Y4, and Y5-Y5 of FIGS. 60 and 61.
- the first to fourth transistors Tr1 to Tr4 are included in the semiconductor region 79.
- the semiconductor region 79 may be, for example, a semiconductor substrate.
- the first to fourth elements 11E to 14E and the first to tenth wirings 77A to 77J are provided on the semiconductor region 79.
- the third other end Td3 is electrically connected to the first conductive member 21 corresponding to the third element 13E by the connecting member 78d and the connecting member 78c.
- the eighth wiring 77H overlaps with the first wiring 77A in the third direction.
- the third direction intersects the plane containing the first extending direction Dx1 and the second extending direction Dx2.
- the third direction is, for example, the Z-axis direction.
- the positions of the first wiring 77A and the eighth wiring 77H in the second extending direction Dx2 are the position of the third wiring 77C in the second extending direction Dx2 and the position of the sixth wiring 77F in the second extending direction Dx2. Is between.
- the first other end Td1 is electrically connected to the first conductive member 21 corresponding to the first element 11E by the connecting member 78s.
- the first diode DE1 of the first element 11E is electrically connected to the fourth wiring 77D by the connecting member 78a.
- the first diode DE1 of the third element 13E is electrically connected to the ninth wiring 77I by the connecting member 78b.
- the ninth wiring 77I overlaps with the fourth wiring 77D in the third direction (for example, the Z-axis direction).
- the third end Ts3 is electrically connected to the third wiring 77C via the connecting members 78j, 78k and 78l.
- the first end Ts1 is electrically connected to the third wiring 77C via the connecting members 78i, 78k and 78l.
- the first conductive member 21 corresponding to the first element 11E and the second element 12E is electrically connected to the first wiring 77A via the connecting member 78q.
- the first conductive member 21 corresponding to the third element 13E and the fourth element 14E is electrically connected to the eighth wiring 77H via the connecting member 78r.
- the fourth end Ts4 is electrically connected to the sixth wiring 77F via the connecting members 78n, 78p and 78o.
- the second end Ts2 is electrically connected to the sixth wiring 77F via the connecting members 78m, 78p and 78o.
- the first diode DE1 of the second element 12E is electrically connected to the seventh wiring 77G by the connecting member 78e.
- the first diode DE1 of the fourth element 14E is electrically connected to the tenth wiring 77J by the connecting member 78f.
- the tenth wiring 77J overlaps with the seventh wiring 77G in the third direction (for example, the Z-axis direction).
- the fourth other end Td4 is electrically connected to the first conductive member 21 corresponding to the fourth element 14E by the connecting member 78h and the connecting member 78g.
- the second other end Td2 is electrically connected to the first conductive member 21 corresponding to the second element 12E by the connecting member 78t.
- the ninth wiring 77I overlaps with the fourth wiring 77D in the third direction (for example, the Z-axis direction).
- the tenth wiring 77J overlaps with the seventh wiring 77G in the third direction (for example, the Z-axis direction).
- the third other end Td3 is electrically connected to the first conductive member 21 corresponding to the third element 13E by the connecting members 78d and 78c.
- the connecting member 78d may overlap with the first conductive member 21 corresponding to the third element 13E in the Z-axis direction.
- the connecting member 78c may be omitted.
- the third wiring 77C is electrically connected to the connecting members 78l and 78k.
- the first other end Td1 is electrically connected to the first conductive member 21 corresponding to the first element 11E by the connecting member 78s.
- the second other end Td2 is electrically connected to the first conductive member 21 corresponding to the second element 12E by the connecting member 78t.
- the first conductive member 21 corresponding to the first element 11E and the second element 12E is electrically connected to the first wiring 77A by the connecting member 78q.
- the first conductive member 21 corresponding to the third element 13E and the fourth element 14E is electrically connected to the eighth wiring 77H by the connecting member 78r.
- the sixth wiring 77F is electrically connected to the connecting members 78p and 78o.
- the fourth other end Td4 is electrically connected to the first conductive member 21 corresponding to the fourth element 14E by the connecting members 78h and 78g.
- the first diode DE1 may contain a metal silicide.
- vertical and parallel include not only strict vertical and strict parallel, but also variations in the manufacturing process, for example, and may be substantially vertical and substantially parallel. ..
- each element such as a conductive member, an element, a laminate, a magnetic layer, a non-magnetic layer, a conductive part, an insulating part, and a control part included in a magnetic device can be appropriately determined from a range known to those skilled in the art.
- the present invention is included in the scope of the present invention as long as the present invention can be carried out in the same manner by selection and the same effect can be obtained.
- CN1 to CN4 ... 1st to 4th connecting members, DA1 ... Anode, DC1 ... Cathode, DE1 ... 1st diode, Dn1, Dn2 ... 1st, 3rd other end, Dp1, Dp2 ... 2nd, 4th other end, Dr1, Dr2 ... 1st, 2nd drain, Drr, Drw ... Drain, DsL ... Metal Silicide layer, DsL1 ... Metal layer, DsL2 ... Silicon layer, Dx1, Dx2 ... 1st and 2nd extending directions, Gn1, Gn2 ... 1st and 3rd gates, Gp1, Gp2 ... 2nd and 4th gates, Gr1, Gr2 ...
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Hall/Mr Elements (AREA)
- Mram Or Spin Memory Techniques (AREA)
Abstract
According to one embodiment, this magnetic device includes: a first element; a first transistor of a first conductivity type; a second transistor of a second conductivity type; and first to third wiring lines. The first element includes a first conductive member and a first laminate. The first conductive member includes a first section, a second section, and a third section between the first section and the second section. The first laminate includes a first magnetic layer. The first transistor includes a first end, a first other end, and a first gate. The second transistor includes a second end, a second other end, and a second gate. The first other end is electrically connected to the first section. The second other end is electrically connected to the first magnetic layer. The first wiring line is electrically connected to the second section. The second wiring line is electrically connected to the first gate and the second gate. The third wiring line is electrically connected to the first end and the second end. Provided is a magnetic device which enables an increase in density.
Description
本発明の実施形態は、磁気デバイスに関する。
Embodiments of the present invention relate to magnetic devices.
磁性層を用いた磁気デバイスが記憶装置または演算装置などに応用される。磁気デバイスにおいて、高密度化が望まれる。
A magnetic device using a magnetic layer is applied to a storage device or an arithmetic unit. Higher densities are desired in magnetic devices.
本発明の実施形態は、高密度化が可能な磁気デバイスを提供する。
An embodiment of the present invention provides a magnetic device capable of increasing the density.
本発明の実施形態によれば、磁気デバイスは、第1素子と、第1導電形の第1トランジスタと、第2導電形の第2トランジスタと、第1配線と、第2配線と、第3配線と、を含む。前記第1素子は、第1導電部材と第1積層体とを含む。前記第1導電部材は、第1部分と、第2部分と、前記第1部分と前記第2部分との間の第3部分と、を含む。前記第1積層体は、第1磁性層と、前記第3部分と前記第1磁性層との間に設けられた第1対向磁性層と、を含む。前記第1トランジスタは、第1端、第1他端及び第1ゲートを含む。第2トランジスタは、第2端、第2他端及び第2ゲートを含む。前記第1他端は、前記第1部分と電気的に接続される。前記第2他端は、前記第1磁性層と電気的に接続される。前記第1配線は、前記第2部分と電気的に接続される。前記第2配線は、前記第1ゲート及び第2ゲートと電気的に接続される。前記第3配線は、前記第1端及び前記第2端と電気的に接続される。
According to the embodiment of the present invention, the magnetic device includes a first element, a first conductive type first transistor, a second conductive type second transistor, a first wiring, a second wiring, and a third. Including wiring. The first element includes a first conductive member and a first laminated body. The first conductive member includes a first portion, a second portion, and a third portion between the first portion and the second portion. The first laminated body includes a first magnetic layer and a first opposed magnetic layer provided between the third portion and the first magnetic layer. The first transistor includes a first end, a first other end and a first gate. The second transistor includes a second end, a second other end and a second gate. The first other end is electrically connected to the first portion. The second other end is electrically connected to the first magnetic layer. The first wiring is electrically connected to the second portion. The second wiring is electrically connected to the first gate and the second gate. The third wiring is electrically connected to the first end and the second end.
以下に、本発明の各実施の形態について図面を参照しつつ説明する。
図面は模式的または概念的なものであり、各部分の厚さと幅との関係、部分間の大きさの比率などは、必ずしも現実のものと同一とは限らない。同じ部分を表す場合であっても、図面により互いの寸法や比率が異なって表される場合もある。
本願明細書と各図において、既出の図に関して前述したものと同様の要素には同一の符号を付して詳細な説明は適宜省略する。 Hereinafter, embodiments of the present invention will be described with reference to the drawings.
The drawings are schematic or conceptual, and the relationship between the thickness and width of each part, the ratio of the sizes between the parts, etc. are not always the same as the actual ones. Even if the same part is represented, the dimensions and ratios of each may be represented differently depending on the drawing.
In the specification of the present application and each figure, the same elements as those described above with respect to the above-mentioned figures are designated by the same reference numerals, and detailed description thereof will be omitted as appropriate.
図面は模式的または概念的なものであり、各部分の厚さと幅との関係、部分間の大きさの比率などは、必ずしも現実のものと同一とは限らない。同じ部分を表す場合であっても、図面により互いの寸法や比率が異なって表される場合もある。
本願明細書と各図において、既出の図に関して前述したものと同様の要素には同一の符号を付して詳細な説明は適宜省略する。 Hereinafter, embodiments of the present invention will be described with reference to the drawings.
The drawings are schematic or conceptual, and the relationship between the thickness and width of each part, the ratio of the sizes between the parts, etc. are not always the same as the actual ones. Even if the same part is represented, the dimensions and ratios of each may be represented differently depending on the drawing.
In the specification of the present application and each figure, the same elements as those described above with respect to the above-mentioned figures are designated by the same reference numerals, and detailed description thereof will be omitted as appropriate.
(第1実施形態)
図1は、第1実施形態に係る磁気デバイスを例示する模式的斜視図である。
図1に示すように、実施形態に係る磁気デバイス110は、第1素子11Eと、第1導電形の第1トランジスタTn1と、第2導電形の第2トランジスタTp1と、第1配線77Aと、第2配線77Bと、第3配線77Cと、を含む。図1に示すように、磁気デバイス110は、制御部70を含んでも良い。第1導電形は、n形及びp形の一方である。第2導電形は、n形及びp形の他方である。以下では、第1導電形がn形であり、第2導電形がp形である。 (First Embodiment)
FIG. 1 is a schematic perspective view illustrating a magnetic device according to the first embodiment.
As shown in FIG. 1, themagnetic device 110 according to the embodiment includes a first element 11E, a first conductive type first transistor Tn1, a second conductive type second transistor Tp1, and a first wiring 77A. The second wiring 77B and the third wiring 77C are included. As shown in FIG. 1, the magnetic device 110 may include a control unit 70. The first conductive type is one of the n type and the p type. The second conductive type is the other of the n type and the p type. In the following, the first conductive type is n-type and the second conductive type is p-type.
図1は、第1実施形態に係る磁気デバイスを例示する模式的斜視図である。
図1に示すように、実施形態に係る磁気デバイス110は、第1素子11Eと、第1導電形の第1トランジスタTn1と、第2導電形の第2トランジスタTp1と、第1配線77Aと、第2配線77Bと、第3配線77Cと、を含む。図1に示すように、磁気デバイス110は、制御部70を含んでも良い。第1導電形は、n形及びp形の一方である。第2導電形は、n形及びp形の他方である。以下では、第1導電形がn形であり、第2導電形がp形である。 (First Embodiment)
FIG. 1 is a schematic perspective view illustrating a magnetic device according to the first embodiment.
As shown in FIG. 1, the
第1素子11Eは、第1導電部材21及び第1積層体S1を含む。第1導電部材21は、第1部分21a、第2部分21b及び第3部分21cを含む。第3部分21cは、第1部分21aと第2部分21bとの間にある。
The first element 11E includes the first conductive member 21 and the first laminated body S1. The first conductive member 21 includes a first portion 21a, a second portion 21b, and a third portion 21c. The third portion 21c is between the first portion 21a and the second portion 21b.
第1積層体S1は、第1磁性層11及び第1対向磁性層11oを含む。第1対向磁性層11oは、第3部分21cと第1磁性層11との間にある。
The first laminated body S1 includes a first magnetic layer 11 and a first opposed magnetic layer 11o. The first opposed magnetic layer 11o is between the third portion 21c and the first magnetic layer 11.
第1部分21aから第2部分21bへの方向を第1方向とする。
The direction from the first portion 21a to the second portion 21b is defined as the first direction.
例えば、第1方向をX軸方向とする。X軸方向に対して垂直な1つの方向をZ軸方向とする。X軸方向及びZ軸方向に対して垂直な方向をY軸方向とする。
For example, the first direction is the X-axis direction. One direction perpendicular to the X-axis direction is defined as the Z-axis direction. The direction perpendicular to the X-axis direction and the Z-axis direction is defined as the Y-axis direction.
第3部分21cから第1磁性層11への第2方向は、第1方向と交差する。第2方向は、例えば、Z軸方向である。
The second direction from the third portion 21c to the first magnetic layer 11 intersects the first direction. The second direction is, for example, the Z-axis direction.
この例では、第1積層体S1は、第1非磁性層11nをさらに含む。第1非磁性層11nは、第1対向磁性層11oと第1磁性層11との間にある。
In this example, the first laminated body S1 further includes a first non-magnetic layer 11n. The first non-magnetic layer 11n is between the first opposed magnetic layer 11o and the first magnetic layer 11.
第1積層体S1の電気抵抗は、変化可能である。例えば、第1導電部材21に流れる第1電流ic1の向きにより、第1積層体S1の電気抵抗が変化することができる。電気抵抗の変化は、例えば、磁気抵抗効果に基づく。
The electrical resistance of the first laminated body S1 can be changed. For example, the electrical resistance of the first laminated body S1 can be changed depending on the direction of the first current ic1 flowing through the first conductive member 21. The change in electrical resistance is based, for example, on the magnetoresistive effect.
例えば、第1磁性層11の磁化11mの向きは、実質的に固定されている。第1対向磁性層11oの磁化11omは、第1導電部材21に流れる第1電流ic1により変化可能である。第1磁性層11は、例えば、参照層である。第1対向磁性層11oは、磁化自由層(または記憶層)である。第1積層体S1は、例えば、MTJ(Magnetic Tunnel Junction)を含む。
For example, the orientation of the magnetization 11 m of the first magnetic layer 11 is substantially fixed. The magnetization 11 om of the first opposed magnetic layer 11o can be changed by the first current ic1 flowing through the first conductive member 21. The first magnetic layer 11 is, for example, a reference layer. The first opposed magnetic layer 11o is a magnetization free layer (or storage layer). The first laminated body S1 includes, for example, MTJ (Magnetic Tunnel Junction).
第1導電部材21に流れる第1電流ic1の向きにより、第1対向磁性層11oの磁化11omの向きが変化する。磁化11omの向きの変化は、例えば、スピンホール効果に基づくと考えられる。
The direction of the magnetization 11 om of the first opposed magnetic layer 11o changes depending on the direction of the first current ic1 flowing through the first conductive member 21. The change in the orientation of the magnetization 11 om is considered to be based on, for example, the Spin Hall effect.
第1積層体S1は、例えば、記憶セルとして応用できる。第1積層体S1は、例えば、演算回路の一部として応用できる。
The first laminated body S1 can be applied as, for example, a storage cell. The first laminated body S1 can be applied, for example, as a part of an arithmetic circuit.
図1に示すように、第1素子11Eは、第1電極11elを含んでも良い。第1電極11elは、第1磁性層11と電気的に接続される。第1積層体S1の電気抵抗は、例えば、第1電極11elと第1導電部材21との間の電気抵抗に対応する。
As shown in FIG. 1, the first element 11E may include the first electrode 11el. The first electrode 11el is electrically connected to the first magnetic layer 11. The electrical resistance of the first laminated body S1 corresponds to, for example, the electrical resistance between the first electrode 11el and the first conductive member 21.
第1トランジスタTn1は、第1端Sn1、第1他端Dn1、及び、第1ゲートGn1を含む。第1端Sn1は、例えば、ソース及びドレインの一方である。第1他端Dn1は、例えば、ソース及びドレインの他方である。
The first transistor Tn1 includes a first end Sn1, a first other end Dn1, and a first gate Gn1. The first end Sn1 is, for example, one of the source and the drain. The first other end Dn1 is, for example, the other of the source and drain.
第2トランジスタTp1は、第2端Sp1、第2他端Dp1、及び、第2ゲートGp1を含む。第2端Sp1は、例えば、ソース及びドレインの一方である。第2他端Dp1は、例えば、ソース及びドレインの他方である。
The second transistor Tp1 includes a second end Sp1, a second other end Dp1, and a second gate Gp1. The second end Sp1 is, for example, one of the source and the drain. The second other end Dp1 is, for example, the other of the source and drain.
第1他端Dn1は、第1部分21aと電気的に接続される。この例では、導電部75aにより、第1他端Dn1と第1部分21aとが、電気的に接続される。
The first other end Dn1 is electrically connected to the first portion 21a. In this example, the first end Dn1 and the first portion 21a are electrically connected by the conductive portion 75a.
第2他端Dp1は、第1磁性層11と電気的に接続される。この例では、第1接続部材CN1により、第1磁性層11と第2他端Dp1とが電気的に接続される。
The second other end Dp1 is electrically connected to the first magnetic layer 11. In this example, the first magnetic layer 11 and the second other end Dp1 are electrically connected by the first connecting member CN1.
第1配線77Aは、第2部分21bと電気的に接続される。この例では、導電部75bにより、第1配線77Aと第2部分21bとが電気的に接続される。第2配線77Bは、第1ゲートGn1及び第2ゲートGn2と電気的に接続される。第3配線77Cは、第1端Sn1及び第2端Sp1と電気的に接続される。
The first wiring 77A is electrically connected to the second portion 21b. In this example, the conductive portion 75b electrically connects the first wiring 77A and the second portion 21b. The second wiring 77B is electrically connected to the first gate Gn1 and the second gate Gn2. The third wiring 77C is electrically connected to the first end Sn1 and the second end Sp1.
例えば、第1配線77Aは、書き込み用及び読み出し用のビット線W/R-BLとして機能する。例えば、第2配線77Bは、書き込み用及び読み出し用のワード線W/R-WLとして機能する。例えば、第3配線77Cは、ソース線SLとして機能する。
For example, the first wiring 77A functions as a bit line W / R-BL for writing and reading. For example, the second wiring 77B functions as a word line W / R-WL for writing and reading. For example, the third wiring 77C functions as a source line SL.
実施形態に係る磁気デバイス110においては、書き込み用及び読み出し用に1つのビット線が設けられ、書き込み用及び読み出し用のワード線として1つのワード線が設けられる。これにより、書き込み用のビット線、読み出し用のビット線、書き込み用のワード線、及び、読み出し用のワード線が設けられる場合に比べて、配線の数を少なくすることができる。これにより、高密度化が可能な磁気デバイスを提供できる。
In the magnetic device 110 according to the embodiment, one bit line is provided for writing and reading, and one word line is provided as a word line for writing and reading. As a result, the number of wirings can be reduced as compared with the case where the bit line for writing, the bit line for reading, the word line for writing, and the word line for reading are provided. This makes it possible to provide a magnetic device capable of increasing the density.
制御部70は、第1配線77A、第2配線77B及び第3配線77Cと電気的に接続される。制御部70は、第1書き込み動作と第1読み出し動作とを実施可能である。制御部70は、例えば、ワード線及びソース線制御回路70Aと、ビット線制御回路70Bと、を含んでも良い。ワード線及びソース線制御回路70Aは、例えば、列制御回路である。ビット線制御回路70Bは、例えば、行制御回路である。以下の実施形態に係る制御部70も、ワード線及びソース線制御回路70Aと、ビット線制御回路70Bと、を含んでも良い。
The control unit 70 is electrically connected to the first wiring 77A, the second wiring 77B, and the third wiring 77C. The control unit 70 can perform the first write operation and the first read operation. The control unit 70 may include, for example, a word line and source line control circuit 70A and a bit line control circuit 70B. The word line and source line control circuit 70A is, for example, a column control circuit. The bit line control circuit 70B is, for example, a row control circuit. The control unit 70 according to the following embodiment may also include a word line and source line control circuit 70A and a bit line control circuit 70B.
例えば、第1書き込み動作において、制御部70は、第2配線77B(ワード線W/R-WL)を選択状態(例えば「1」に対応する電位)として、第1トランジスタTn1を介して、第1部分21aと第2部分21bとの間に電流を供給する。
For example, in the first writing operation, the control unit 70 sets the second wiring 77B (word line W / R-WL) as the selected state (for example, the potential corresponding to “1”) and uses the first transistor Tn1 to make the first. A current is supplied between the first portion 21a and the second portion 21b.
例えば、第1読み出し動作において、制御部70は、第2配線77B(ワード線W/R-WL)を非選択状態(例えば「0」に対応する電位)として、第2トランジスタTp1を介して、第1積層体S1の電気抵抗に対応する値を検出する。
For example, in the first read operation, the control unit 70 sets the second wiring 77B (word line W / R-WL) in a non-selected state (for example, the potential corresponding to “0”) via the second transistor Tp1. A value corresponding to the electric resistance of the first laminated body S1 is detected.
このように、書き込み動作において第1トランジスタTn1が用いられ、読み出し動作において第2トランジスタTp1が用いられる。これにより、これらの動作において、配線が兼用できる。
As described above, the first transistor Tn1 is used in the writing operation, and the second transistor Tp1 is used in the reading operation. As a result, wiring can also be used in these operations.
書き込み動作において、第1配線77A(ビット線W/R-BL)は、プラスまたはマイナスの電位(+/-)に設定されて良い。これにより、第1電流ic1は、第1部分21aから第2部分21bへの向き、または、第2部分21bから第1部分21aへの向きになる。第1対向磁性層11oの磁化11omの向きが変化し、第1積層体S1の電気抵抗が変化する。
In the writing operation, the first wiring 77A (bit line W / R-BL) may be set to a positive or negative potential (+/-). As a result, the first current ic1 is oriented from the first portion 21a to the second portion 21b, or from the second portion 21b to the first portion 21a. The direction of the magnetization 11 om of the first opposed magnetic layer 11o changes, and the electrical resistance of the first laminated body S1 changes.
図2(a)、図2(b)、及び、図3(a)~図3(c)は、第1実施形態に係る磁気デバイスを例示する模式図である。
図2(a)は、模式的透過平面図である。図2(b)は、図2(a)のB1-B1’線断面図である。図3(a)は、図2(a)のA3-A3’線断面図である。図3(b)は、図2(a)のA2-A2’線断面図である。図3(c)は、図2(a)のA1-A1’線断面図である。以下の各図において、絶縁部分は適宜省略される。 2 (a), 2 (b), and 3 (a) to 3 (c) are schematic views illustrating the magnetic device according to the first embodiment.
FIG. 2A is a schematic transmission plan view. FIG. 2B is a cross-sectional view taken along the line B1-B1'of FIG. 2A. FIG. 3A is a cross-sectional view taken along the line A3-A3'of FIG. 2A. FIG. 3B is a cross-sectional view taken along the line A2-A2'of FIG. 2A. FIG. 3 (c) is a cross-sectional view taken along the line A1-A1'of FIG. 2 (a). In each of the following figures, the insulating portion is appropriately omitted.
図2(a)は、模式的透過平面図である。図2(b)は、図2(a)のB1-B1’線断面図である。図3(a)は、図2(a)のA3-A3’線断面図である。図3(b)は、図2(a)のA2-A2’線断面図である。図3(c)は、図2(a)のA1-A1’線断面図である。以下の各図において、絶縁部分は適宜省略される。 2 (a), 2 (b), and 3 (a) to 3 (c) are schematic views illustrating the magnetic device according to the first embodiment.
FIG. 2A is a schematic transmission plan view. FIG. 2B is a cross-sectional view taken along the line B1-B1'of FIG. 2A. FIG. 3A is a cross-sectional view taken along the line A3-A3'of FIG. 2A. FIG. 3B is a cross-sectional view taken along the line A2-A2'of FIG. 2A. FIG. 3 (c) is a cross-sectional view taken along the line A1-A1'of FIG. 2 (a). In each of the following figures, the insulating portion is appropriately omitted.
図2(a)に示すように、第1積層体S1、第1導電部材21、第1トランジスタTn1及び第2トランジスタTp1が、4F×4Fの大きさの領域に設けられる。「F」は、例えば、最小加工寸法に対応する。
As shown in FIG. 2A, the first laminated body S1, the first conductive member 21, the first transistor Tn1 and the second transistor Tp1 are provided in a region having a size of 4F × 4F. “F” corresponds to, for example, the minimum machining dimension.
図3(c)に示すように、第3部分21cから第1磁性層11への第2方向(例えばZ軸方向)は、第1部分21aから第2部分21bへの第1方向(X軸方向)と交差する。図3(c)に示すように、この例では、第1端Sn1から第3配線77Cの一部への方向は、第2方向(Z軸方向)に沿う。この例では、第1端Sn1から第2部分21bへの方向は、第2方向(Z軸方向)に沿う。図3(a)に示すように、第2端Sp1から第3配線77Cの別の一部への方向は、第2方向(Z軸方向)に沿う。図3(c)に示すように、第1他端Dn1から第1部分21aへの方向は、第2方向(Z軸方向)に沿う。
As shown in FIG. 3C, the second direction (for example, the Z-axis direction) from the third portion 21c to the first magnetic layer 11 is the first direction (X-axis) from the first portion 21a to the second portion 21b. Cross the direction). As shown in FIG. 3C, in this example, the direction from the first end Sn1 to a part of the third wiring 77C is along the second direction (Z-axis direction). In this example, the direction from the first end Sn1 to the second portion 21b is along the second direction (Z-axis direction). As shown in FIG. 3A, the direction from the second end Sp1 to another part of the third wiring 77C is along the second direction (Z-axis direction). As shown in FIG. 3C, the direction from the first other end Dn1 to the first portion 21a is along the second direction (Z-axis direction).
このような構成により、磁気デバイス110に含まれる各種の要素が小さい面積の中に置かれる。高密度化が可能な磁気デバイスを提供できる。
With such a configuration, various elements included in the magnetic device 110 are placed in a small area. It is possible to provide a magnetic device capable of increasing the density.
図2(a)に示すように、第1接続部材CN1が設けられる。第1接続部材CN1は、第1磁性層11と第2他端Dp1とを電気的に接続する。図3(a)に示すように、第2他端Dp1から第1接続部材CN1への方向は、第2方向(Z軸方向)に沿う。この例では、第2他端Dp1は、導電部75r、第1接続部材CN1、及び、第1電極11elにより、第1積層体S1の第1磁性層11と電気的に接続される。
As shown in FIG. 2A, the first connecting member CN1 is provided. The first connecting member CN1 electrically connects the first magnetic layer 11 and the second other end Dp1. As shown in FIG. 3A, the direction from the second other end Dp1 to the first connecting member CN1 is along the second direction (Z-axis direction). In this example, the second other end Dp1 is electrically connected to the first magnetic layer 11 of the first laminated body S1 by the conductive portion 75r, the first connecting member CN1, and the first electrode 11el.
図3(b)に示すように、第1積層体S1から第1配線77Aの一部への方向は、第2方向(Z軸方向)に沿う。高密度化が可能な磁気デバイスが提供できる。
As shown in FIG. 3B, the direction from the first laminated body S1 to a part of the first wiring 77A is along the second direction (Z-axis direction). A magnetic device capable of increasing the density can be provided.
図3(c)に示すように、第1他端Dn1及び第1部分21aが、導電部75aにより電気的に接続される。導電部75aは、例えば、Z軸方向に沿って延びる。
As shown in FIG. 3C, the first other end Dn1 and the first portion 21a are electrically connected by the conductive portion 75a. The conductive portion 75a extends, for example, along the Z-axis direction.
図4は、第1実施形態に係る磁気デバイスを例示する模式的斜視図である。
図4に示すように、実施形態に係る磁気デバイス111は、第1素子11E、第1トランジスタTn1、第2トランジスタTp1、第1配線77A、第2配線77B、及び、第3配線77Cに加えて、第1導電形(例えばn形)の第3トランジスタTn2、第2導電形(例えばp形)の第4トランジスタTp2、及び、第4配線77Dを含む。 FIG. 4 is a schematic perspective view illustrating the magnetic device according to the first embodiment.
As shown in FIG. 4, themagnetic device 111 according to the embodiment is in addition to the first element 11E, the first transistor Tn1, the second transistor Tp1, the first wiring 77A, the second wiring 77B, and the third wiring 77C. , A third transistor Tn2 of a first conductive type (for example, n type), a fourth transistor Tp2 of a second conductive type (for example, p type), and a fourth wiring 77D.
図4に示すように、実施形態に係る磁気デバイス111は、第1素子11E、第1トランジスタTn1、第2トランジスタTp1、第1配線77A、第2配線77B、及び、第3配線77Cに加えて、第1導電形(例えばn形)の第3トランジスタTn2、第2導電形(例えばp形)の第4トランジスタTp2、及び、第4配線77Dを含む。 FIG. 4 is a schematic perspective view illustrating the magnetic device according to the first embodiment.
As shown in FIG. 4, the
第1トランジスタTn1、第2トランジスタTp1、第1配線77A、第2配線77B、及び、第3配線77Cには、磁気デバイス110に関して説明した構成が適用できる。以下、磁気デバイス111について、磁気デバイス110とは異なる部分ついて、説明する。
The configuration described for the magnetic device 110 can be applied to the first transistor Tn1, the second transistor Tp1, the first wiring 77A, the second wiring 77B, and the third wiring 77C. Hereinafter, the magnetic device 111 will be described with reference to parts different from the magnetic device 110.
図4に示すように、第1素子11Eは、第1導電部材21及び第1積層体S1に加えて、第2積層体S2をさらに含む。
As shown in FIG. 4, the first element 11E further includes a second laminated body S2 in addition to the first conductive member 21 and the first laminated body S1.
第1導電部材21は、第4部分21d及び第5部分21eを含む。第2部分21bと第4部分21dとの間に第5部分21eがある。第2積層体S2は、第2磁性層12と、第5部分21eと第2磁性層12との間に設けられた第2対向磁性層12oと、を含む。この例では、第2積層体S2は、第2非磁性層12nをさらに含む。第2非磁性層12nは、第2対向磁性層12oと第2磁性層12との間にある。
The first conductive member 21 includes a fourth portion 21d and a fifth portion 21e. There is a fifth portion 21e between the second portion 21b and the fourth portion 21d. The second laminated body S2 includes a second magnetic layer 12 and a second opposed magnetic layer 12o provided between the fifth portion 21e and the second magnetic layer 12. In this example, the second laminated body S2 further includes a second non-magnetic layer 12n. The second non-magnetic layer 12n is located between the second opposed magnetic layer 12o and the second magnetic layer 12.
例えば、第1導電部材21に流れる第1電流ic1の向きに応じて、第2対向磁性層12oの磁化12omの向きが変化する。これにより、磁化12omの向きと、第2磁性層12の磁化12mの向きと、の間の角度が変化する。これにより、第2積層体S2の電気抵抗が変化する。
For example, the direction of the magnetization 12 om of the second opposed magnetic layer 12o changes according to the direction of the first current ic1 flowing through the first conductive member 21. As a result, the angle between the direction of the magnetization 12 om and the direction of the magnetization 12 m of the second magnetic layer 12 changes. As a result, the electrical resistance of the second laminated body S2 changes.
この例では、第1素子11Eは、第2電極12elを含む。第2電極12elは、第1磁性層12と電気的に接続される。第2積層体S2の電気抵抗は、例えば、第2電極12elと第1導電部材21との間の電気抵抗に対応する。
In this example, the first element 11E includes the second electrode 12el. The second electrode 12el is electrically connected to the first magnetic layer 12. The electrical resistance of the second laminated body S2 corresponds to, for example, the electrical resistance between the second electrode 12el and the first conductive member 21.
図4に示すように、第3トランジスタTn2は、第3端Sn2、第3他端Dn2、及び、第3ゲートGn2を含む。第3端Sn2は、例えば、ソース及びドレインの一方である。第3他端Dn2は、例えば、ソース及びドレインの他方である。
As shown in FIG. 4, the third transistor Tn2 includes a third end Sn2, a third other end Dn2, and a third gate Gn2. The third end Sn2 is, for example, one of the source and the drain. The third other end Dn2 is, for example, the other of the source and drain.
第4トランジスタTp1は、第4端Sp2、第4他端Dp2、及び、第4ゲートGp2を含む。第4端Sp2は、例えば、ソース及びドレインの一方である。第4他端Dp2は、例えば、ソース及びドレインの他方である。
The fourth transistor Tp1 includes a fourth end Sp2, a fourth other end Dp2, and a fourth gate Gp2. The fourth end Sp2 is, for example, one of the source and the drain. The fourth other end Dp2 is, for example, the other of the source and drain.
図4に示すように、第3他端Dn2は、第4部分21dと電気的に接続される。この例では、導電部75cにより、第3他端Dn2と第4部分21dとが、電気的に接続される。
As shown in FIG. 4, the third other end Dn2 is electrically connected to the fourth portion 21d. In this example, the third end Dn2 and the fourth portion 21d are electrically connected by the conductive portion 75c.
第4他端Dp2は、第2磁性層12と電気的に接続される。この例では、第2接続部材CN2により、第4他端Dp2と第2磁性層12とが、電気的に接続される。
The fourth other end Dp2 is electrically connected to the second magnetic layer 12. In this example, the fourth end Dp2 and the second magnetic layer 12 are electrically connected by the second connecting member CN2.
第4配線77Dは、第3ゲートGn2及び第4ゲートGp2と電気的に接続される。第3配線77Cは、第3端Sn2及び第4端Sp2と電気的に接続される。
The fourth wiring 77D is electrically connected to the third gate Gn2 and the fourth gate Gp2. The third wiring 77C is electrically connected to the third end Sn2 and the fourth end Sp2.
例えば、第1配線77Aは、第1積層体S1及び第2積層体S2に関しての、書き込み用及び読み出し用のビット線W/R-BLとして機能する。例えば、第2配線77Bは、第1積層体S1に関しての、書き込み用及び読み出し用のワード線W/R-WLとして機能する。第4配線77Dは、第2積層体S2に関しての、書き込み用及び読み出し用のワード線W/R-WLとして機能する。例えば、第3配線77Cは、ソース線SLとして機能する。
For example, the first wiring 77A functions as a bit line W / R-BL for writing and reading with respect to the first laminated body S1 and the second laminated body S2. For example, the second wiring 77B functions as a word line W / R-WL for writing and reading with respect to the first laminated body S1. The fourth wiring 77D functions as a word line W / R-WL for writing and reading with respect to the second laminated body S2. For example, the third wiring 77C functions as a source line SL.
磁気デバイス111において、書き込み用の配線、及び、読み出し用の配線が兼用される。これにより、高密度化が可能な磁気デバイスを提供できる。
In the magnetic device 111, the wiring for writing and the wiring for reading are shared. This makes it possible to provide a magnetic device capable of increasing the density.
制御部70は、第1配線77A、第2配線77B、第3配線77C及び第4配線77Dと電気的に接続される。
The control unit 70 is electrically connected to the first wiring 77A, the second wiring 77B, the third wiring 77C, and the fourth wiring 77D.
例えば、制御部70は、第1書き込み動作、第2書き込み動作、第1読み出し動作及び第2読み出し操作を実施可能である。
For example, the control unit 70 can perform a first write operation, a second write operation, a first read operation, and a second read operation.
第1書き込み動作において、制御部70は、第2配線77B(書き込み用及び読み出し用のワード線W/R-WL)を選択状態として、第1トランジスタTn1を介して、第1部分21aと第2部分21bとの間に電流を供給する。第2書き込み動作において、制御部70は、第4配線77D(書き込み用及び読み出し用のワード線W/R-WL)を選択状態として、第3トランジスタTn2を介して、第4部分21dと第2部分21bの間に電流を供給する。
In the first writing operation, the control unit 70 selects the second wiring 77B (word line W / R-WL for writing and reading) as a selected state, and sets the first portion 21a and the second through the first transistor Tn1. A current is supplied to and from the portion 21b. In the second writing operation, the control unit 70 selects the fourth wiring 77D (word line W / R-WL for writing and reading) in the selected state, and sets the fourth portion 21d and the second through the third transistor Tn2. A current is supplied between the portions 21b.
第1読み出し動作において、制御部70は、第2配線77B(書き込み用及び読み出し用のワード線W/R-WL)を非選択状態として、第2トランジスタTp1を介して、第1積層体S1の電気抵抗に対応する値を検出する。第2読み出し動作において、制御部70は、第4配線77Dを非選択状態として、第4トランジスタTp2を介して第2積層体S2の電気抵抗に対応する値を検出する。
In the first read operation, the control unit 70 sets the second wiring 77B (word line W / R-WL for writing and reading) in the non-selected state, and sets the second layer S1 via the second transistor Tp1. Detect the value corresponding to the electrical resistance. In the second read operation, the control unit 70 sets the fourth wiring 77D in the non-selected state and detects a value corresponding to the electric resistance of the second laminated body S2 via the fourth transistor Tp2.
制御部70は、以下の、第1書き込み動作、第2書き込み動作、及び、読み出し動作を実施しても良い。第1書き込み動作において、制御部70は、第2配線77Bを選択状態として、第1トランジスタTn1を介して、第1部分21aと第2部分21bとの間に電流を供給する。第2書き込み動作において、制御部70は、第4配線77Dを選択状態として、第3トランジスタTn2を介して、第4部分21dと第2部分21bとの間に電流を供給する。読み出し動作において、制御部70は、第2配線77B及び第4配線77Dを非選択状態として、第2トランジスタTp1及び第4トランジスタTp2を介して、第2部分21bの電位に対応する値を検出する。
The control unit 70 may perform the following first write operation, second write operation, and read operation. In the first writing operation, the control unit 70 selects the second wiring 77B and supplies a current between the first portion 21a and the second portion 21b via the first transistor Tn1. In the second writing operation, the control unit 70 selects the fourth wiring 77D and supplies a current between the fourth portion 21d and the second portion 21b via the third transistor Tn2. In the read operation, the control unit 70 detects the value corresponding to the potential of the second portion 21b via the second transistor Tp1 and the fourth transistor Tp2 with the second wiring 77B and the fourth wiring 77D in the non-selected state. ..
図5(a)、図5(b)、及び、図6は、第1実施形態に係る磁気デバイスを例示する模式図である。
図5(a)は、模式的透過平面図である。図5(b)は、図5(a)のA1-A1’線断面図である。図6は、図5(a)のB1-B1’線断面図である。 5 (a), 5 (b), and 6 are schematic views illustrating the magnetic device according to the first embodiment.
FIG. 5A is a schematic transmission plan view. 5 (b) is a cross-sectional view taken along the line A1-A1'of FIG. 5 (a). FIG. 6 is a cross-sectional view taken along the line B1-B1'of FIG. 5 (a).
図5(a)は、模式的透過平面図である。図5(b)は、図5(a)のA1-A1’線断面図である。図6は、図5(a)のB1-B1’線断面図である。 5 (a), 5 (b), and 6 are schematic views illustrating the magnetic device according to the first embodiment.
FIG. 5A is a schematic transmission plan view. 5 (b) is a cross-sectional view taken along the line A1-A1'of FIG. 5 (a). FIG. 6 is a cross-sectional view taken along the line B1-B1'of FIG. 5 (a).
図5(a)に示すように、第1積層体S1、第2積層体S2、第1導電部材21、第1トランジスタTn1、第2トランジスタTp1、第3トランジスタTn2、及び、第4トランジスタTp2が、6F×4Fの大きさの領域に設けられる。
As shown in FIG. 5A, the first laminated body S1, the second laminated body S2, the first conductive member 21, the first transistor Tn1, the second transistor Tp1, the third transistor Tn2, and the fourth transistor Tp2 , 6F x 4F size area.
図5(b)に示すように、第3部分21cから第1磁性層11への第2方向は、第1部分21aから第2部分21bへの第1方向(X軸方向)と交差する。第2方向は、例えば、Z軸方向である。第5部分21eから第2磁性層12への方向は、第2方向に沿う。
As shown in FIG. 5B, the second direction from the third portion 21c to the first magnetic layer 11 intersects the first direction (X-axis direction) from the first portion 21a to the second portion 21b. The second direction is, for example, the Z-axis direction. The direction from the fifth portion 21e to the second magnetic layer 12 is along the second direction.
図5(a)に示すように、第2端Sp1から第3配線77Cの一部への方向は、第2方向(Z軸方向)に沿う。
As shown in FIG. 5A, the direction from the second end Sp1 to a part of the third wiring 77C is along the second direction (Z-axis direction).
図5(a)に示すように、第1方向(X軸方向)における第2配線77Bの位置は、第1方向における第1部分21aの位置と、第1方向における第4部分21dの位置と、の間にある。第1方向における第4配線77Dの位置は、第1方向における第2配線77Bの位置と、第1方向における第4部分21dの位置と、の間にある。第1方向における第3配線77Cの位置は、第1方向における第2配線77Bの位置と、第1方向における第4配線77Dの位置と、の間にある。
As shown in FIG. 5A, the positions of the second wiring 77B in the first direction (X-axis direction) are the position of the first portion 21a in the first direction and the position of the fourth portion 21d in the first direction. Is between. The position of the fourth wiring 77D in the first direction is between the position of the second wiring 77B in the first direction and the position of the fourth portion 21d in the first direction. The position of the third wiring 77C in the first direction is between the position of the second wiring 77B in the first direction and the position of the fourth wiring 77D in the first direction.
図5(b)に示すように、第1他端Dn1から第1部分21aへの方向は、第2方向(Z軸方向)に沿う。第1端Sn1から第3配線77Cの一部への方向は、第2方向(Z軸方向)に沿う。第3他端Dn2から第4部分21dへの方向は、第2方向(Z軸方向)に沿う。
As shown in FIG. 5B, the direction from the first other end Dn1 to the first portion 21a is along the second direction (Z-axis direction). The direction from the first end Sn1 to a part of the third wiring 77C is along the second direction (Z-axis direction). The direction from the third other end Dn2 to the fourth portion 21d is along the second direction (Z-axis direction).
図5(b)に示すように、第1接続部材CN1及び第2接続部材CN2が設けられる。図4に示すように、第1接続部材CN1は、第1磁性層11と第2他端Dp1とを電気的に接続する。図4に示すように、第2接続部材CN2は、第2磁性層12と第4他端Dp2とを電気的に接続する。
As shown in FIG. 5B, the first connecting member CN1 and the second connecting member CN2 are provided. As shown in FIG. 4, the first connecting member CN1 electrically connects the first magnetic layer 11 and the second other end Dp1. As shown in FIG. 4, the second connecting member CN2 electrically connects the second magnetic layer 12 and the fourth other end Dp2.
図5(a)及び図5(b)に示すように、第2配線77Bから第1接続部材CN1への方向は、第2方向(Z軸方向)に沿う。図5(a)及び図5(b)に示すように、第4配線77Dから第2接続部材CN2への方向は、第2方向(Z軸方向)に沿う。
As shown in FIGS. 5A and 5B, the direction from the second wiring 77B to the first connecting member CN1 is along the second direction (Z-axis direction). As shown in FIGS. 5A and 5B, the direction from the fourth wiring 77D to the second connecting member CN2 is along the second direction (Z-axis direction).
図6に示すように、Z軸方向における第4配線77Dの位置は、Z軸方向における第3ゲートGn2の位置と、Z軸方向における第1導電部材21の位置と、の間にある。図6に示すように、Z軸方向における第4配線77Dの位置は、Z軸方向における第3ゲートGn2の位置と、Z軸方向における第1配線77Aの位置と、の間にある。高密度化が可能な磁気デバイスを提供できる。
As shown in FIG. 6, the position of the fourth wiring 77D in the Z-axis direction is between the position of the third gate Gn2 in the Z-axis direction and the position of the first conductive member 21 in the Z-axis direction. As shown in FIG. 6, the position of the fourth wiring 77D in the Z-axis direction is between the position of the third gate Gn2 in the Z-axis direction and the position of the first wiring 77A in the Z-axis direction. It is possible to provide a magnetic device capable of increasing the density.
図7及び図8は、第1実施形態に係る磁気デバイスを例示する模式図である。
図7は、斜視図である。図8は、模式的透過平面図である。 7 and 8 are schematic views illustrating the magnetic device according to the first embodiment.
FIG. 7 is a perspective view. FIG. 8 is a schematic transmission plan view.
図7は、斜視図である。図8は、模式的透過平面図である。 7 and 8 are schematic views illustrating the magnetic device according to the first embodiment.
FIG. 7 is a perspective view. FIG. 8 is a schematic transmission plan view.
図7に示すように、実施形態に係る磁気デバイス112は、第5配線77Eを含む。磁気デバイス112におけるこれ以外の構成は、例えば、磁気デバイス111の構成と同様である。以下、第5配線77Eの例について説明する。
As shown in FIG. 7, the magnetic device 112 according to the embodiment includes the fifth wiring 77E. Other configurations of the magnetic device 112 are similar to, for example, the configuration of the magnetic device 111. Hereinafter, an example of the fifth wiring 77E will be described.
図7に示すように、第5配線77Eは、第1部分21a及び第4部分21dの少なくともいずれかと電気的に接続される。例えば、第5配線77Eにより、第1部分21aが制御部70に接続される。例えば、第5配線77Eにより、第4部分21dが制御部70に接続される。
As shown in FIG. 7, the fifth wiring 77E is electrically connected to at least one of the first portion 21a and the fourth portion 21d. For example, the first portion 21a is connected to the control unit 70 by the fifth wiring 77E. For example, the fourth portion 21d is connected to the control unit 70 by the fifth wiring 77E.
第1部分21aと接続される第5配線77Eは、例えば、第1積層体S1についての読み出し用のビット線R-BLとして機能する。第4部分21dと接続される第5配線77Eは、例えば、第2積層体S2についての読み出し用のビット線R-BLとして機能する。
The fifth wiring 77E connected to the first portion 21a functions as, for example, a bit line R-BL for reading the first laminated body S1. The fifth wiring 77E connected to the fourth portion 21d functions as, for example, a bit line R-BL for reading the second laminated body S2.
磁気デバイス112においても、書き込み動作において、配線が兼用される。高密度化が可能な磁気デバイスを提供できる。
Also in the magnetic device 112, wiring is also used in the writing operation. It is possible to provide a magnetic device capable of increasing the density.
図7及び図8に示すように、磁気デバイス112は、第3接続部材CN3及び第4接続部材CN4をさらに含んでも良い。第3接続部材CN3は、第5配線77Eと第1部分21aとを電気的に接続する。第4接続部材CN4は、第5配線77Eと第4部分21dとを電気的に接続する。
As shown in FIGS. 7 and 8, the magnetic device 112 may further include a third connecting member CN3 and a fourth connecting member CN4. The third connecting member CN3 electrically connects the fifth wiring 77E and the first portion 21a. The fourth connecting member CN4 electrically connects the fifth wiring 77E and the fourth portion 21d.
図8に示すように、第3接続部材CN3は、第2方向(Z軸方向)において、第1他端Dn1と重なる。第4接続部材CN4は、第2方向において、第3他端Dn2と重なる。高密度化が可能な磁気デバイスを提供できる。
As shown in FIG. 8, the third connecting member CN3 overlaps with the first other end Dn1 in the second direction (Z-axis direction). The fourth connecting member CN4 overlaps with the third other end Dn2 in the second direction. It is possible to provide a magnetic device capable of increasing the density.
第1実施形態に係る磁気デバイスにおいて、後述する第1導電部25e及び第2導電部26eが設けられても良い。第1実施形態において、トランジスタは、後述するfin型トランジスタ(例えばfin型FET)でも良い。
In the magnetic device according to the first embodiment, the first conductive portion 25e and the second conductive portion 26e, which will be described later, may be provided. In the first embodiment, the transistor may be a fin-type transistor (for example, a fin-type FET) described later.
(第2実施形態)
図9は、第2実施形態に係る磁気デバイスを例示する模式的斜視図である。
図9に示すように、実施形態に係る磁気デバイス120は、第1素子11Eと、第1導電部25eと、第2導電部26eと、を含む。図9に示すように、磁気デバイス120は、第1トランジスタTr1、第2トランジスタTr2及び制御部70などを含んでも良い。 (Second Embodiment)
FIG. 9 is a schematic perspective view illustrating the magnetic device according to the second embodiment.
As shown in FIG. 9, themagnetic device 120 according to the embodiment includes a first element 11E, a first conductive portion 25e, and a second conductive portion 26e. As shown in FIG. 9, the magnetic device 120 may include a first transistor Tr1, a second transistor Tr2, a control unit 70, and the like.
図9は、第2実施形態に係る磁気デバイスを例示する模式的斜視図である。
図9に示すように、実施形態に係る磁気デバイス120は、第1素子11Eと、第1導電部25eと、第2導電部26eと、を含む。図9に示すように、磁気デバイス120は、第1トランジスタTr1、第2トランジスタTr2及び制御部70などを含んでも良い。 (Second Embodiment)
FIG. 9 is a schematic perspective view illustrating the magnetic device according to the second embodiment.
As shown in FIG. 9, the
図9に示すように、第1素子11Eは、第1導電部材21と第1積層体S1とを含む。第1導電部材21は、第1部分21aと、第2部分21bと、第3部分21cと、を含む。第3部分21cは、第1部分21aと第2部分21bとの間にある。
As shown in FIG. 9, the first element 11E includes the first conductive member 21 and the first laminated body S1. The first conductive member 21 includes a first portion 21a, a second portion 21b, and a third portion 21c. The third portion 21c is between the first portion 21a and the second portion 21b.
第1積層体S1は、第1磁性層11及び第1対向磁性層11oを含む。第1対向磁性層11oは、第3部分21cと第1磁性層11との間に設けられる。第1積層体S1は、第1非磁性層11nを含んでも良い。
The first laminated body S1 includes a first magnetic layer 11 and a first opposed magnetic layer 11o. The first opposed magnetic layer 11o is provided between the third portion 21c and the first magnetic layer 11. The first laminated body S1 may include the first non-magnetic layer 11n.
第1導電部25eは、第1部分21aと電気的に接続される。第2導電部26eは、第2部分21bと電気的に接続される。第1導電部25eから第2導電部26eへの方向は、第1方向に沿う。第1方向は、X軸方向に対応する。
The first conductive portion 25e is electrically connected to the first portion 21a. The second conductive portion 26e is electrically connected to the second portion 21b. The direction from the first conductive portion 25e to the second conductive portion 26e is along the first direction. The first direction corresponds to the X-axis direction.
第1部分21aは、第1方向(X軸方向)において、第1導電部25eの一部25pと、第2導電部26eの一部26pと、の間にある。第2部分21bは、第1方向(X軸方向)において、第1部分21aと、第2導電部26eの一部26pと、の間にある。
The first portion 21a is located between a part 25p of the first conductive portion 25e and a part 26p of the second conductive portion 26e in the first direction (X-axis direction). The second portion 21b is located between the first portion 21a and a part 26p of the second conductive portion 26e in the first direction (X-axis direction).
例えば、第1部分21aは、第1側面sf1を含む。第1側面sf1は、第1方向(X軸方向)と交差する。第2部分21bは、第2側面sf2を含む。第2側面sf2は、第1方向(X軸方向)と交差する。
For example, the first portion 21a includes the first side surface sf1. The first side surface sf1 intersects the first direction (X-axis direction). The second portion 21b includes a second side surface sf2. The second side surface sf2 intersects the first direction (X-axis direction).
第1導電部25eの上記の一部25pは、第1側面sf1と対向する。第2導電部26eの上記の一部26pは、第2側面sf2と対向する。例えば、一部25pは、第1側面sf1と接する。一部26pは、第2側面sf2と接する。
The above-mentioned part 25p of the first conductive portion 25e faces the first side surface sf1. The above-mentioned part 26p of the second conductive portion 26e faces the second side surface sf2. For example, a part of 25p is in contact with the first side surface sf1. Part 26p is in contact with the second side surface sf2.
磁気デバイス120においては、第1導電部材21の側面に、第1導電部25e及び第2導電部26eが接続される。これにより、接続部分の領域を狭くできる。安定した接続が可能になる。磁気デバイス120によれば、高密度化が可能な磁気デバイスを提供できる。
In the magnetic device 120, the first conductive portion 25e and the second conductive portion 26e are connected to the side surface of the first conductive member 21. As a result, the area of the connection portion can be narrowed. A stable connection is possible. According to the magnetic device 120, it is possible to provide a magnetic device capable of increasing the density.
図9に示すように、磁気デバイス120は、第1絶縁部分25i及び第2絶縁部分26iを含んでも良い。第1絶縁部分25iは、第1積層体S1と第1導電部25eとの間にある。第2絶縁部分26iは、第1積層体S1と第2導電部26eとの間にある。安定した電気的な絶縁が得られる。
As shown in FIG. 9, the magnetic device 120 may include a first insulating portion 25i and a second insulating portion 26i. The first insulating portion 25i is located between the first laminated body S1 and the first conductive portion 25e. The second insulating portion 26i is located between the first laminated body S1 and the second conductive portion 26e. Stable electrical insulation can be obtained.
例えば、第1導電部材21及び積層体S1となる構造体が形成される。構造体は、積層体S1となる積層膜を含む。この積層膜がエッチングされて、第1積層体S1が得られる。第1積層体S1の側壁に絶縁部分が形成された後に、第1導電部材21となる膜をさらにエッチングする。これにより、第1導電部材21の側面が形成される。側面に接するように導電膜を形成することで、第1導電部25e及び第2導電部26eが得られる。
For example, a structure to be the first conductive member 21 and the laminated body S1 is formed. The structure includes a laminated film that becomes the laminated body S1. This laminated film is etched to obtain the first laminated body S1. After the insulating portion is formed on the side wall of the first laminated body S1, the film to be the first conductive member 21 is further etched. As a result, the side surface of the first conductive member 21 is formed. By forming the conductive film so as to be in contact with the side surface, the first conductive portion 25e and the second conductive portion 26e can be obtained.
実施形態において、第1導電部25e及び第2導電部26eの少なくとも1つは、トランジスタと電気的に接続されても良い。この例では、第1導電部25eは、第1トランジスタTr1と電気的に接続され、第2導電部26eは、第2トランジスタTr2と電気的に接続される。
In the embodiment, at least one of the first conductive portion 25e and the second conductive portion 26e may be electrically connected to the transistor. In this example, the first conductive portion 25e is electrically connected to the first transistor Tr1, and the second conductive portion 26e is electrically connected to the second transistor Tr2.
図10(a)及び図10(b)は、第2実施形態に係る磁気デバイスを例示する模式図である。
図10(a)は、模式的透過平面図である。図10(b)は、断面図である。 10 (a) and 10 (b) are schematic views illustrating the magnetic device according to the second embodiment.
FIG. 10A is a schematic transmission plan view. FIG. 10B is a cross-sectional view.
図10(a)は、模式的透過平面図である。図10(b)は、断面図である。 10 (a) and 10 (b) are schematic views illustrating the magnetic device according to the second embodiment.
FIG. 10A is a schematic transmission plan view. FIG. 10B is a cross-sectional view.
図10(a)及び図10(b)に示すように、絶縁部27iと絶縁部27jとの間に第1導電部材21が設けられる。絶縁部27iと第1導電部材21との間に第1導電部25eが設けられる。第1導電部材21と絶縁部27jとの間に第2導電部26eが設けられる。
As shown in FIGS. 10A and 10B, the first conductive member 21 is provided between the insulating portion 27i and the insulating portion 27j. A first conductive portion 25e is provided between the insulating portion 27i and the first conductive member 21. A second conductive portion 26e is provided between the first conductive member 21 and the insulating portion 27j.
図10(b)に示すように、例えば、絶縁部27kと積層体S1との間に第1導電部材21が設けられる。
As shown in FIG. 10B, for example, the first conductive member 21 is provided between the insulating portion 27k and the laminated body S1.
図10(b)に示すように、第2トランジスタTr2は、第2ソースSr2、第2ドレインDr2及び第2ゲートGr2を含む。この例では、導電部75dにより、第2ドレインDr2と第2導電部26eとが電気的に接続される。第2ソースSr2は、第3配線77C(ソース線SL)と電気的に接続される。この例では、第2ゲートGr2から第1積層体S1への方向は、Z軸方向に沿う。
As shown in FIG. 10B, the second transistor Tr2 includes the second source Sr2, the second drain Dr2, and the second gate Gr2. In this example, the second drain Dr2 and the second conductive portion 26e are electrically connected by the conductive portion 75d. The second source Sr2 is electrically connected to the third wiring 77C (source line SL). In this example, the direction from the second gate Gr2 to the first laminated body S1 is along the Z-axis direction.
図10(b)に示すように、第1導電部25eは、書き込み用のビット線W-BLと電気的に接続される。第1磁性層11は、読み出し用のビット線R-BLと電気的に接続される。
As shown in FIG. 10B, the first conductive portion 25e is electrically connected to the writing bit wire W-BL. The first magnetic layer 11 is electrically connected to the read bit wire R-BL.
図10(b)に示すように、第1導電部25eの下端25L、及び、第2導電部26eの下端26Lは、第1導電部材21よりも下にある。トランジスタ(例えば、第1トランジスタTr1及び第2トランジスタTr2など)は、下端25L及び下端26Lよりも下にある。
As shown in FIG. 10B, the lower end 25L of the first conductive portion 25e and the lower end 26L of the second conductive portion 26e are below the first conductive member 21. The transistors (for example, the first transistor Tr1 and the second transistor Tr2) are below the lower end 25L and the lower end 26L.
図11(a)及び図11(b)は、第2実施形態に係る磁気デバイスを例示する模式的断面図である。
図11(a)に示す磁気デバイス121においては、X軸方向における第2ゲートGr2の位置は、X軸方向における第1積層体S1の位置からシフトしている。 11 (a) and 11 (b) are schematic cross-sectional views illustrating the magnetic device according to the second embodiment.
In themagnetic device 121 shown in FIG. 11A, the position of the second gate Gr2 in the X-axis direction is shifted from the position of the first laminated body S1 in the X-axis direction.
図11(a)に示す磁気デバイス121においては、X軸方向における第2ゲートGr2の位置は、X軸方向における第1積層体S1の位置からシフトしている。 11 (a) and 11 (b) are schematic cross-sectional views illustrating the magnetic device according to the second embodiment.
In the
図11(b)に示す磁気デバイス122においては、積層体S1のX軸方向の長さは、磁気デバイス121における積層体S1のX軸方向の長さよりも長い。
In the magnetic device 122 shown in FIG. 11B, the length of the laminated body S1 in the X-axis direction is longer than the length of the laminated body S1 in the magnetic device 121 in the X-axis direction.
第2実施形態に係る磁気デバイス120~122においては、第1導電部25eと第2導電部26eとの間に、第1導電部材21が設けられる。加工条件などがばらついたときでも、安定した電気的な接続が得られる。
In the magnetic devices 120 to 122 according to the second embodiment, the first conductive member 21 is provided between the first conductive portion 25e and the second conductive portion 26e. A stable electrical connection can be obtained even when the processing conditions vary.
図12は、第2実施形態に係る磁気デバイスを例示する模式的断面図である。
図12に示すように、磁気デバイス123においては、複数の第1素子11Eが設けられる。複数の第1素子11Eのそれぞれにおいて、図9に関して説明した構成が適用される。 FIG. 12 is a schematic cross-sectional view illustrating the magnetic device according to the second embodiment.
As shown in FIG. 12, in themagnetic device 123, a plurality of first elements 11E are provided. The configuration described with respect to FIG. 9 is applied to each of the plurality of first elements 11E.
図12に示すように、磁気デバイス123においては、複数の第1素子11Eが設けられる。複数の第1素子11Eのそれぞれにおいて、図9に関して説明した構成が適用される。 FIG. 12 is a schematic cross-sectional view illustrating the magnetic device according to the second embodiment.
As shown in FIG. 12, in the
図13は、第2実施形態に係る磁気デバイスを例示する模式的斜視図である。
図13に示すように、磁気デバイス124においては、第1トランジスタTr1として、第1導電形の第1トランジスタTn1が設けられ、第2トランジスタTr2として、第2導電形の第2トランジスタTp1が設けられる。これにより、第1実施形態に関して説明したように、配線が省略できる。より高密度化が可能な磁気デバイスを提供できる。 FIG. 13 is a schematic perspective view illustrating the magnetic device according to the second embodiment.
As shown in FIG. 13, in themagnetic device 124, the first conductive type first transistor Tn1 is provided as the first transistor Tr1, and the second conductive type second transistor Tp1 is provided as the second transistor Tr2. .. As a result, wiring can be omitted as described with respect to the first embodiment. It is possible to provide a magnetic device capable of increasing the density.
図13に示すように、磁気デバイス124においては、第1トランジスタTr1として、第1導電形の第1トランジスタTn1が設けられ、第2トランジスタTr2として、第2導電形の第2トランジスタTp1が設けられる。これにより、第1実施形態に関して説明したように、配線が省略できる。より高密度化が可能な磁気デバイスを提供できる。 FIG. 13 is a schematic perspective view illustrating the magnetic device according to the second embodiment.
As shown in FIG. 13, in the
(第3実施形態)
図14(a)及び図14(b)は、第3実施形態に係る磁気デバイスを例示する模式図である。
図14(a)は、斜視図である。図14(b)は、模式的透過平面図である。 (Third Embodiment)
14 (a) and 14 (b) are schematic views illustrating the magnetic device according to the third embodiment.
FIG. 14A is a perspective view. FIG. 14B is a schematic transmission plan view.
図14(a)及び図14(b)は、第3実施形態に係る磁気デバイスを例示する模式図である。
図14(a)は、斜視図である。図14(b)は、模式的透過平面図である。 (Third Embodiment)
14 (a) and 14 (b) are schematic views illustrating the magnetic device according to the third embodiment.
FIG. 14A is a perspective view. FIG. 14B is a schematic transmission plan view.
図14(a)に示すように、実施形態に係る磁気デバイス130は、第1素子11Eと、第1トランジスタTr1と、を含む。図14(a)に示すように、磁気デバイス130は、制御部70を含んでも良い。
As shown in FIG. 14A, the magnetic device 130 according to the embodiment includes the first element 11E and the first transistor Tr1. As shown in FIG. 14A, the magnetic device 130 may include a control unit 70.
図14(a)に示すように、第1素子11Eは、第1導電部材21及び第1積層体S1を含む。第1導電部材21は、第1部分21aと、第2部分21bと、第3部分21cと、を含む。第3部分21cは、第1部分21aと第2部分21bとの間にある。第1積層体S1は、第1磁性層11及び第1対向磁性層11oを含む。第1対向磁性層11oは、第3部分21cと第1磁性層11との間に設けられる。この例では、第1積層体S1は、第1非磁性層11nを含む。
As shown in FIG. 14A, the first element 11E includes the first conductive member 21 and the first laminated body S1. The first conductive member 21 includes a first portion 21a, a second portion 21b, and a third portion 21c. The third portion 21c is between the first portion 21a and the second portion 21b. The first laminated body S1 includes a first magnetic layer 11 and a first opposed magnetic layer 11o. The first opposed magnetic layer 11o is provided between the third portion 21c and the first magnetic layer 11. In this example, the first laminated body S1 includes a first non-magnetic layer 11n.
第1トランジスタTr1は、fin型のトランジスタである。例えば、第1トランジスタTr1は、fin型のFET(field effect transistor)である。
The first transistor Tr1 is a fin type transistor. For example, the first transistor Tr1 is a fin type FET (field effect transistor).
図14(a)に示すように、第1部分21aから第2部分21bへの方向は、第1方向に沿う。第1方向は、X軸方向に対応する。第3部分21cから第1磁性層11への第2方向は、第1方向と交差する。第2方向は、例えば、Z軸方向である。
As shown in FIG. 14A, the direction from the first portion 21a to the second portion 21b is along the first direction. The first direction corresponds to the X-axis direction. The second direction from the third portion 21c to the first magnetic layer 11 intersects the first direction. The second direction is, for example, the Z-axis direction.
第1トランジスタTr1は、第1半導体部材35を含む。第1半導体部材35は、第1方向(X軸方向)に沿って延びる。
The first transistor Tr1 includes the first semiconductor member 35. The first semiconductor member 35 extends along the first direction (X-axis direction).
この例では、図14(a)に示すように、第1半導体部材35の少なくとも一部から第1導電部材21の少なくとも一部への方向は、第2方向(Z軸方向)に沿う。例えば、第1導電部材21は、Z軸方向において、第1半導体部材35と重なる。
In this example, as shown in FIG. 14A, the direction from at least a part of the first semiconductor member 35 to at least a part of the first conductive member 21 is along the second direction (Z-axis direction). For example, the first conductive member 21 overlaps with the first semiconductor member 35 in the Z-axis direction.
第1半導体部材35は、例えば、第1導電部材21と電気的に接続される。この例では、第1接続部31及び第2接続部32が設けられる。第2接続部32により、第1半導体部材35が、第1導電部材21(この例では第2部分21b)と電気的に接続される。
The first semiconductor member 35 is electrically connected to, for example, the first conductive member 21. In this example, the first connection portion 31 and the second connection portion 32 are provided. The second connecting portion 32 electrically connects the first semiconductor member 35 to the first conductive member 21 (in this example, the second portion 21b).
1つの例において、第1トランジスタTr1は、第1導電部材21への電流の供給を制御する。1つの例において、第1トランジスタTr1は、第1積層体S1の電気抵抗の測定(読み出し動作)の制御に用いられる。
In one example, the first transistor Tr1 controls the supply of current to the first conductive member 21. In one example, the first transistor Tr1 is used to control the measurement (reading operation) of the electrical resistance of the first laminated body S1.
第1トランジスタTr1がfin構造を有することで、小さい面積で、上記の動作をより安定して制御できる。第3実施形態においても、高密度化が可能な磁気デバイスを提供できる。
Since the first transistor Tr1 has a fin structure, the above operation can be controlled more stably with a small area. Also in the third embodiment, it is possible to provide a magnetic device capable of increasing the density.
図14(a)に示すように、第1トランジスタTr1は、第1ソースSr1、第1ドレインDr1及び第1ゲートGr1を含む。この例では、第1ドレインDr1は、第2接続部32を介して、第1導電部材21の第2部分21bと電気的に接続される。第1ソースSr1は、ソース線SLと電気的に接続される。
As shown in FIG. 14A, the first transistor Tr1 includes a first source Sr1, a first drain Dr1, and a first gate Gr1. In this example, the first drain Dr1 is electrically connected to the second portion 21b of the first conductive member 21 via the second connecting portion 32. The first source Sr1 is electrically connected to the source line SL.
第1ゲートGr1は、Y軸方向に沿って延びる。この例では、第1ゲートGr1は、第1半導体部材35の2つの側面と対向する。第1ゲートGr1は、第1半導体部材35の上面と対向する。第1ゲートGr1は、例えば、ワード線WLとなる。または、第1ゲートGr1は、例えば、ワード線WLと電気的に接続される。
The first gate Gr1 extends along the Y-axis direction. In this example, the first gate Gr1 faces the two sides of the first semiconductor member 35. The first gate Gr1 faces the upper surface of the first semiconductor member 35. The first gate Gr1 is, for example, a word line WL. Alternatively, the first gate Gr1 is electrically connected to, for example, the word line WL.
第1導電部材21の第1部分21aは、書き込み用のビット線W-BLと接続される。第1磁性層11は、読み出し用のビット線R-BLと電気的に接続される。上記の配線が、制御部70に電気的に接続される。制御部70により、書き込み動作及び読み出し動作が行われる。
The first portion 21a of the first conductive member 21 is connected to the writing bit wire W-BL. The first magnetic layer 11 is electrically connected to the read bit wire R-BL. The above wiring is electrically connected to the control unit 70. The control unit 70 performs a write operation and a read operation.
図15(a)~図15(e)は、第3実施形態に係る磁気デバイスを例示する模式的透過平面図である。
図15(a)~図15(e)に示す磁気デバイス130a~130eにおいては、複数の第1半導体部材35が設けられる。これらの磁気デバイスにおいては、第1導電部材21のY軸方向における中心の位置は、第1半導体部材35のY軸方向における中心の位置と実質的に同じである。複数の第1半導体部材35の位置を基準にして、対称な位置に第1導電部材21が設けられている。 15 (a) to 15 (e) are schematic transmission plan views illustrating the magnetic device according to the third embodiment.
In themagnetic devices 130a to 130e shown in FIGS. 15A to 15E, a plurality of first semiconductor members 35 are provided. In these magnetic devices, the position of the center of the first conductive member 21 in the Y-axis direction is substantially the same as the position of the center of the first semiconductor member 35 in the Y-axis direction. The first conductive member 21 is provided at symmetrical positions with respect to the positions of the plurality of first semiconductor members 35.
図15(a)~図15(e)に示す磁気デバイス130a~130eにおいては、複数の第1半導体部材35が設けられる。これらの磁気デバイスにおいては、第1導電部材21のY軸方向における中心の位置は、第1半導体部材35のY軸方向における中心の位置と実質的に同じである。複数の第1半導体部材35の位置を基準にして、対称な位置に第1導電部材21が設けられている。 15 (a) to 15 (e) are schematic transmission plan views illustrating the magnetic device according to the third embodiment.
In the
磁気デバイス130dにおいては、第1導電部材21の平面形状は、扁平円状であり、第1積層体S1の平面形状は、扁平円状である。磁気デバイス130eにおいては、第1導電部材21の平面形状は、コーナー部が丸い矩形状であり、第1積層体S1の平面形状は、扁平円状である。
In the magnetic device 130d, the planar shape of the first conductive member 21 is a flat circular shape, and the planar shape of the first laminated body S1 is a flat circular shape. In the magnetic device 130e, the planar shape of the first conductive member 21 is a rectangular shape with rounded corners, and the planar shape of the first laminated body S1 is a flat circular shape.
図16(a)~図16(f)は、第3実施形態に係る磁気デバイスを例示する模式的透過平面図である。
図16(a)~図16(f)に示す磁気デバイス131a~131fにおいては、Y軸方向(第1方向及び第2方向を含む平面と交差する第3方向)における第1半導体部材35の位置は、Y軸方向(第3方向)における第1導電部材21の中心の位置からシフトしている。複数の第1半導体部材35の位置を基準にして、非対称な位置に第1導電部材21が設けられている。 16 (a) to 16 (f) are schematic transmission plan views illustrating the magnetic device according to the third embodiment.
In themagnetic devices 131a to 131f shown in FIGS. 16A to 16F, the position of the first semiconductor member 35 in the Y-axis direction (the third direction intersecting the plane including the first direction and the second direction). Is shifted from the position of the center of the first conductive member 21 in the Y-axis direction (third direction). The first conductive member 21 is provided at an asymmetrical position with respect to the positions of the plurality of first semiconductor members 35.
図16(a)~図16(f)に示す磁気デバイス131a~131fにおいては、Y軸方向(第1方向及び第2方向を含む平面と交差する第3方向)における第1半導体部材35の位置は、Y軸方向(第3方向)における第1導電部材21の中心の位置からシフトしている。複数の第1半導体部材35の位置を基準にして、非対称な位置に第1導電部材21が設けられている。 16 (a) to 16 (f) are schematic transmission plan views illustrating the magnetic device according to the third embodiment.
In the
例えば、トランジスタの動作中に第1半導体部材35の温度が上昇する場合がある。例えば、温度の上昇により、第1導電部材21などの温度が上昇する。非対称な位置に第1導電部材21が設けられていると、第1導電部材21における温度の上昇が第1導電部材21内で不均一になる。これにより、第1対向磁性層11oの磁化11omが安定して判定し易くなる。安定した動作が得やすくなる。
For example, the temperature of the first semiconductor member 35 may rise during the operation of the transistor. For example, as the temperature rises, the temperature of the first conductive member 21 and the like rises. If the first conductive member 21 is provided at an asymmetrical position, the temperature rise in the first conductive member 21 becomes non-uniform in the first conductive member 21. This makes it easier to determine the magnetization 11 om of the first opposed magnetic layer 11o in a stable manner. It becomes easy to obtain stable operation.
例えば、第1導電部材21内のスピン拡散長などのスピン特性は、温度が上昇すると低下する。不均一な(例えば非対称の)領域に第1導電部材21を設けることで、その上の第1対向磁性層11oに作用する記録電流密度を不均一にすることができる。これにより、第1対向磁性層11oの磁化11omの反転部分が限定され易くなる。例えば、反転電流分布を狭めることができる。これにより、例えば、安定した動作が得やすくなる。例えば、高い歩留まりを得ることができる。
For example, spin characteristics such as the spin diffusion length in the first conductive member 21 decrease as the temperature rises. By providing the first conductive member 21 in a non-uniform (for example, asymmetrical) region, the recording current density acting on the first opposed magnetic layer 11o on the first conductive member 21 can be made non-uniform. As a result, the inverted portion of the magnetization 11om of the first opposed magnetic layer 11o is likely to be limited. For example, the inverting current distribution can be narrowed. This makes it easier to obtain stable operation, for example. For example, a high yield can be obtained.
例えば、第1半導体部材35の温度の上昇に伴って、第1導電部材21内に不均一な応力の導入が加わる場合がある。それにより、第1導電部材21内に、反転電流密度が局所的に低くなる領域が形成される場合がある。これにより、磁化11omが安定して反転し易くなる。安定した動作が得やすくなる。
For example, as the temperature of the first semiconductor member 35 rises, non-uniform stress may be introduced into the first conductive member 21. As a result, a region in which the reversal current density is locally low may be formed in the first conductive member 21. As a result, the magnetization 11 om becomes stable and easily inverted. It becomes easy to obtain stable operation.
磁気デバイス131eにおいては、第1導電部材21の平面形状は、扁平円状であり、第1積層体S1の平面形状は、扁平円状である。磁気デバイス131fにおいては、第1導電部材21の平面形状は、コーナー部が丸い矩形状であり、第1積層体S1の平面形状は、扁平円状である。
In the magnetic device 131e, the planar shape of the first conductive member 21 is a flat circular shape, and the planar shape of the first laminated body S1 is a flat circular shape. In the magnetic device 131f, the planar shape of the first conductive member 21 is a rectangular shape with rounded corners, and the planar shape of the first laminated body S1 is a flat circular shape.
図17(a)~図17(c)は、第3実施形態に係る磁気デバイスを例示する模式的透過平面図である。
図17(a)~図17(c)に示す磁気デバイス132a~132cにおいては、第1半導体部材35は、第3方向(例えばY軸方向)に延びる。第3方向は、第1方向及び第2方向と交差する平面と交差する。この例において、第1半導体部材35の一部から第1導電部材21の一部への方向は、第2方向(Z軸方向)に沿う。例えば、第1導電部材21の一部は、Z軸方向において、第1半導体部材35と重なる。 17 (a) to 17 (c) are schematic transmission plan views illustrating the magnetic device according to the third embodiment.
In themagnetic devices 132a to 132c shown in FIGS. 17A to 17C, the first semiconductor member 35 extends in the third direction (for example, the Y-axis direction). The third direction intersects a plane that intersects the first and second directions. In this example, the direction from a part of the first semiconductor member 35 to a part of the first conductive member 21 is along the second direction (Z-axis direction). For example, a part of the first conductive member 21 overlaps with the first semiconductor member 35 in the Z-axis direction.
図17(a)~図17(c)に示す磁気デバイス132a~132cにおいては、第1半導体部材35は、第3方向(例えばY軸方向)に延びる。第3方向は、第1方向及び第2方向と交差する平面と交差する。この例において、第1半導体部材35の一部から第1導電部材21の一部への方向は、第2方向(Z軸方向)に沿う。例えば、第1導電部材21の一部は、Z軸方向において、第1半導体部材35と重なる。 17 (a) to 17 (c) are schematic transmission plan views illustrating the magnetic device according to the third embodiment.
In the
磁気デバイス132a~132cにおいて、X軸方向における第1半導体部材35の位置は、X軸方向における第1導電部材21の中心の位置からシフトしている。例えば、複数の第1半導体部材35の位置を基準にして、非対称な位置に第1導電部材21が設けられている。
In the magnetic devices 132a to 132c, the position of the first semiconductor member 35 in the X-axis direction is shifted from the position of the center of the first conductive member 21 in the X-axis direction. For example, the first conductive member 21 is provided at an asymmetrical position with reference to the positions of the plurality of first semiconductor members 35.
磁気デバイス130、130a~130e、131a~131f、及び、132a~132cの例において、例えば、第1半導体部材35は、第1導電部材21と電気的に接続される。磁気デバイス130c及び131dの例においては、第1積層体S1に加えて第2積層体S2が設けられる。
In the examples of the magnetic devices 130, 130a to 130e, 131a to 131f, and 132a to 132c, for example, the first semiconductor member 35 is electrically connected to the first conductive member 21. In the examples of the magnetic devices 130c and 131d, the second laminated body S2 is provided in addition to the first laminated body S1.
図18は、第3実施形態に係る磁気デバイスを例示する模式的斜視図である。
図18に示すように、磁気デバイス133において、書き込み用のビット線W-BL、読み出し用のビット線R-BL、書き込み用のワード線W-WL、及び、読み出し用のワード線R-WLが設けられる。 FIG. 18 is a schematic perspective view illustrating the magnetic device according to the third embodiment.
As shown in FIG. 18, in themagnetic device 133, the bit line W-BL for writing, the bit line R-BL for reading, the word line W-WL for writing, and the word line R-WL for reading are Provided.
図18に示すように、磁気デバイス133において、書き込み用のビット線W-BL、読み出し用のビット線R-BL、書き込み用のワード線W-WL、及び、読み出し用のワード線R-WLが設けられる。 FIG. 18 is a schematic perspective view illustrating the magnetic device according to the third embodiment.
As shown in FIG. 18, in the
第1トランジスタTr1の書き込み用のドレインDrwは、第2接続部32を介して、書き込み用のビット線W-BLと電気的に接続される。読み出し用のドレインDrrは、第1接続部31を介して、読み出し用のビット線R-BLと電気的に接続される。書き込み用のビット線W-BLと、第1導電部材21と、は、導電部75eにより電気的に接続される。読み出し用のビット線R-BLと、第1導電部材21と、は、導電部75fにより電気的に接続される。
The writing drain Drw of the first transistor Tr1 is electrically connected to the writing bit line W-BL via the second connecting portion 32. The read drain Drr is electrically connected to the read bit line R-BL via the first connection portion 31. The writing bit wire W-BL and the first conductive member 21 are electrically connected by the conductive portion 75e. The read-out bit wire R-BL and the first conductive member 21 are electrically connected by the conductive portion 75f.
図19は、第3実施形態に係る磁気デバイスを例示する模式的斜視図である。
図19に示すように、磁気デバイス134において、第1素子11E、第1トランジスタTn1、第2トランジスタTp1、第1配線77A、第2配線77B、及び、第3配線77Cが設けられる。第1トランジスタTn1及び第2トランジスタTp1は、fin型トランジスタである。このように、第1実施形態に係る磁性デバイスにおいて、第1トランジスタTn1及び第2トランジスタTp1の少なくともいずれかは、fin型トランジスタを含んでも良い。 FIG. 19 is a schematic perspective view illustrating the magnetic device according to the third embodiment.
As shown in FIG. 19, in themagnetic device 134, the first element 11E, the first transistor Tn1, the second transistor Tp1, the first wiring 77A, the second wiring 77B, and the third wiring 77C are provided. The first transistor Tn1 and the second transistor Tp1 are fin type transistors. As described above, in the magnetic device according to the first embodiment, at least one of the first transistor Tn1 and the second transistor Tp1 may include a fin type transistor.
図19に示すように、磁気デバイス134において、第1素子11E、第1トランジスタTn1、第2トランジスタTp1、第1配線77A、第2配線77B、及び、第3配線77Cが設けられる。第1トランジスタTn1及び第2トランジスタTp1は、fin型トランジスタである。このように、第1実施形態に係る磁性デバイスにおいて、第1トランジスタTn1及び第2トランジスタTp1の少なくともいずれかは、fin型トランジスタを含んでも良い。 FIG. 19 is a schematic perspective view illustrating the magnetic device according to the third embodiment.
As shown in FIG. 19, in the
例えば、第1トランジスタTn1は、第2半導体部材36を含む。第2トランジスタTp1は、第1半導体部材35を含む。
For example, the first transistor Tn1 includes the second semiconductor member 36. The second transistor Tp1 includes a first semiconductor member 35.
磁気デバイス134においては、第1導電部25e及び第2導電部26eが設けられている。第1導電部25eは、第1導電部材21の第1部分21aと電気的に接続される。第2導電部26eは、第1導電部材21の第2部分21bと電気的に接続される。第1部分21aは、第1方向(X軸方向)において、第1導電部25eの一部と、第2導電部26eの一部26pと、の間にある。第2部分21bは、第1方向において、第1部分21aと、第2導電部26eの一部26pとの間にある。
The magnetic device 134 is provided with a first conductive portion 25e and a second conductive portion 26e. The first conductive portion 25e is electrically connected to the first portion 21a of the first conductive member 21. The second conductive portion 26e is electrically connected to the second portion 21b of the first conductive member 21. The first portion 21a is located between a part of the first conductive portion 25e and a part 26p of the second conductive portion 26e in the first direction (X-axis direction). The second portion 21b is located between the first portion 21a and a portion 26p of the second conductive portion 26e in the first direction.
このように、第1~第3実施形態の少なくとも2つが組み合わされても良い。
In this way, at least two of the first to third embodiments may be combined.
以下、実施形態に係る磁気デバイスに含まれる要素の構成の例について説明する。
Hereinafter, an example of the configuration of the elements included in the magnetic device according to the embodiment will be described.
第1導電部材21は、例えば、Ta、W、Re、Os、Ir、Pt、Au、Cu、Ag及びPdよりなる群から選択された少なくとも1つを含む。第1導電部材21の厚さは、例えば、3nm以上10nm以下(例えば5nm)である。
The first conductive member 21 includes, for example, at least one selected from the group consisting of Ta, W, Re, Os, Ir, Pt, Au, Cu, Ag and Pd. The thickness of the first conductive member 21 is, for example, 3 nm or more and 10 nm or less (for example, 5 nm).
第1磁性層11及び第2磁性層12の少なくともいずれかは、例えば、Fe及びCoよりなる群から選択された少なくとも1つを含む。これらの磁性層は、積層膜を含んでも良い。積層膜は、例えば、CoFe膜(厚さは2nm)/Ru膜(厚さは0.8nm)/Co膜/CoFeB膜(厚さは2nm)の構成を有する。
At least one of the first magnetic layer 11 and the second magnetic layer 12 includes, for example, at least one selected from the group consisting of Fe and Co. These magnetic layers may include a laminated film. The laminated film has, for example, a CoFe film (thickness: 2 nm) / Ru film (thickness: 0.8 nm) / Co film / CoFeB film (thickness: 2 nm).
第1対向磁性層11o及び第2対向磁性層12oの少なくともいずれかは、例えば、Fe及びCoよりなる群から選択された少なくとも1つと、ボロンと、を含む。これらの磁性層の厚さは、例えば、1nm以上2nm以下(例えば、1.6nm)である。
At least one of the first opposed magnetic layer 11o and the second opposed magnetic layer 12o includes, for example, at least one selected from the group consisting of Fe and Co, and boron. The thickness of these magnetic layers is, for example, 1 nm or more and 2 nm or less (for example, 1.6 nm).
第1非磁性層11n及び第2非磁性層12nの少なくともいずれかは、例えば、Mg及び酸素を含む。これらの非磁性層の厚さは、例えば、1nm以上2nm以下(例えば1.4nm)である。
At least one of the first non-magnetic layer 11n and the second non-magnetic layer 12n contains, for example, Mg and oxygen. The thickness of these non-magnetic layers is, for example, 1 nm or more and 2 nm or less (for example, 1.4 nm).
上記の材料及び厚さに関する記載は例であり、磁気デバイスに含まれる要素の構成は、変更可能である。
The above description regarding the material and thickness is an example, and the composition of the elements included in the magnetic device can be changed.
実施形態は、例えば、以下の構成(例えば技術案)を含む。
(構成1)
第1導電部材と第1積層体とを含む第1素子であって、前記第1導電部材は、第1部分と、第2部分と、前記第1部分と前記第2部分との間の第3部分と、を含み、前記第1積層体は、第1磁性層と、前記第3部分と前記第1磁性層との間に設けられた第1対向磁性層と、を含む、前記第1素子と、
第1端、第1他端及び第1ゲートを含む第1トランジスタと、
第2端、第2他端及び第2ゲートを含む第2トランジスタと、
第1配線と、
第2配線と、
第3配線と、
を備え、
前記第1他端は、前記第1部分と電気的に接続され、
前記第2他端は、前記第1磁性層と電気的に接続され、
前記第1配線は、前記第2部分と電気的に接続され、
前記第2配線は、前記第1ゲート及び第2ゲートと電気的に接続され、
前記第3配線は、前記第1端及び前記第2端と電気的に接続された、磁気デバイス。 The embodiments include, for example, the following configurations (eg, technical proposals).
(Structure 1)
A first element including a first conductive member and a first laminated body, wherein the first conductive member is a first portion between a first portion, a second portion, and the first portion and the second portion. The first laminated body includes a first magnetic layer and a first opposed magnetic layer provided between the third portion and the first magnetic layer. With the element
A first transistor including a first end, a first other end, and a first gate,
A second transistor including a second end, a second other end, and a second gate,
1st wiring and
2nd wiring and
3rd wiring and
With
The first other end is electrically connected to the first portion.
The second other end is electrically connected to the first magnetic layer.
The first wiring is electrically connected to the second portion and is connected to the second portion.
The second wiring is electrically connected to the first gate and the second gate, and is connected to the first gate and the second gate.
The third wiring is a magnetic device electrically connected to the first end and the second end.
(構成1)
第1導電部材と第1積層体とを含む第1素子であって、前記第1導電部材は、第1部分と、第2部分と、前記第1部分と前記第2部分との間の第3部分と、を含み、前記第1積層体は、第1磁性層と、前記第3部分と前記第1磁性層との間に設けられた第1対向磁性層と、を含む、前記第1素子と、
第1端、第1他端及び第1ゲートを含む第1トランジスタと、
第2端、第2他端及び第2ゲートを含む第2トランジスタと、
第1配線と、
第2配線と、
第3配線と、
を備え、
前記第1他端は、前記第1部分と電気的に接続され、
前記第2他端は、前記第1磁性層と電気的に接続され、
前記第1配線は、前記第2部分と電気的に接続され、
前記第2配線は、前記第1ゲート及び第2ゲートと電気的に接続され、
前記第3配線は、前記第1端及び前記第2端と電気的に接続された、磁気デバイス。 The embodiments include, for example, the following configurations (eg, technical proposals).
(Structure 1)
A first element including a first conductive member and a first laminated body, wherein the first conductive member is a first portion between a first portion, a second portion, and the first portion and the second portion. The first laminated body includes a first magnetic layer and a first opposed magnetic layer provided between the third portion and the first magnetic layer. With the element
A first transistor including a first end, a first other end, and a first gate,
A second transistor including a second end, a second other end, and a second gate,
1st wiring and
2nd wiring and
3rd wiring and
With
The first other end is electrically connected to the first portion.
The second other end is electrically connected to the first magnetic layer.
The first wiring is electrically connected to the second portion and is connected to the second portion.
The second wiring is electrically connected to the first gate and the second gate, and is connected to the first gate and the second gate.
The third wiring is a magnetic device electrically connected to the first end and the second end.
(構成2)
制御部をさらに備え、
前記制御部は、前記第1配線、前記第2配線及び前記第3配線と電気的に接続され、
前記制御部は、第1書き込み動作と第1読み出し動作とを実施可能であり、
前記第1書き込み動作において、前記制御部は、前記第2配線を選択状態として前記第1トランジスタを介して前記第1部分と前記第2部分との間に電流を供給し、
前記第1読み出し動作において、前記制御部は、前記第2配線を非選択状態として前記第2トランジスタを介して前記第1積層体の電気抵抗に対応する値を検出する、構成1記載の磁気デバイス。 (Structure 2)
With more control
The control unit is electrically connected to the first wiring, the second wiring, and the third wiring.
The control unit can perform a first write operation and a first read operation.
In the first writing operation, the control unit supplies a current between the first portion and the second portion via the first transistor with the second wiring selected.
In the first read operation, the control unit detects a value corresponding to the electric resistance of the first laminated body via the second transistor with the second wiring in a non-selected state, according to the magnetic device according to theconfiguration 1. ..
制御部をさらに備え、
前記制御部は、前記第1配線、前記第2配線及び前記第3配線と電気的に接続され、
前記制御部は、第1書き込み動作と第1読み出し動作とを実施可能であり、
前記第1書き込み動作において、前記制御部は、前記第2配線を選択状態として前記第1トランジスタを介して前記第1部分と前記第2部分との間に電流を供給し、
前記第1読み出し動作において、前記制御部は、前記第2配線を非選択状態として前記第2トランジスタを介して前記第1積層体の電気抵抗に対応する値を検出する、構成1記載の磁気デバイス。 (Structure 2)
With more control
The control unit is electrically connected to the first wiring, the second wiring, and the third wiring.
The control unit can perform a first write operation and a first read operation.
In the first writing operation, the control unit supplies a current between the first portion and the second portion via the first transistor with the second wiring selected.
In the first read operation, the control unit detects a value corresponding to the electric resistance of the first laminated body via the second transistor with the second wiring in a non-selected state, according to the magnetic device according to the
(構成3)
前記第3部分から前記第1磁性層への第2方向は、前記第1部分から前記第2部分への第1方向と交差し、
前記第1端から前記第3配線の一部への方向は、前記第2方向に沿い、
前記第1端から前記第2部分の一部への方向は、前記第2方向に沿い、
前記第2端から前記第3配線の別の一部への方向は、前記第2方向に沿い、
前記第1他端から前記第1部分への方向は、前記第2方向に沿う、構成1または2に記載の磁気デバイス。 (Structure 3)
The second direction from the third portion to the first magnetic layer intersects the first direction from the first portion to the second portion.
The direction from the first end to a part of the third wiring is along the second direction.
The direction from the first end to a part of the second portion is along the second direction.
The direction from the second end to another part of the third wiring is along the second direction.
The magnetic device according to configuration 1 or 2, wherein the direction from the first other end to the first portion is along the second direction.
前記第3部分から前記第1磁性層への第2方向は、前記第1部分から前記第2部分への第1方向と交差し、
前記第1端から前記第3配線の一部への方向は、前記第2方向に沿い、
前記第1端から前記第2部分の一部への方向は、前記第2方向に沿い、
前記第2端から前記第3配線の別の一部への方向は、前記第2方向に沿い、
前記第1他端から前記第1部分への方向は、前記第2方向に沿う、構成1または2に記載の磁気デバイス。 (Structure 3)
The second direction from the third portion to the first magnetic layer intersects the first direction from the first portion to the second portion.
The direction from the first end to a part of the third wiring is along the second direction.
The direction from the first end to a part of the second portion is along the second direction.
The direction from the second end to another part of the third wiring is along the second direction.
The magnetic device according to
(構成4)
前記第1磁性層と前記第2他端とを電気的に接続する第1接続部材をさらに備え、
前記第2端から前記第1接続部材の一部への方向は、前記第2方向に沿う、構成3記載の磁気デバイス。 (Structure 4)
A first connecting member for electrically connecting the first magnetic layer and the second other end is further provided.
The magnetic device according to configuration 3, wherein the direction from the second end to a part of the first connecting member is along the second direction.
前記第1磁性層と前記第2他端とを電気的に接続する第1接続部材をさらに備え、
前記第2端から前記第1接続部材の一部への方向は、前記第2方向に沿う、構成3記載の磁気デバイス。 (Structure 4)
A first connecting member for electrically connecting the first magnetic layer and the second other end is further provided.
The magnetic device according to configuration 3, wherein the direction from the second end to a part of the first connecting member is along the second direction.
(構成5)
前記第1積層体から前記第1配線への方向は、前記第2方向に沿う、構成2~4のいずれか1つに記載の磁気デバイス。 (Structure 5)
The magnetic device according to any one ofconfigurations 2 to 4, wherein the direction from the first laminated body to the first wiring is along the second direction.
前記第1積層体から前記第1配線への方向は、前記第2方向に沿う、構成2~4のいずれか1つに記載の磁気デバイス。 (Structure 5)
The magnetic device according to any one of
(構成6)
第3端、第3他端及び第3ゲートを含む第3トランジスタと、
第4端、第4他端及び第4ゲートを含む第4トランジスタと、
第4配線と、
をさらに備え、
前記第1素子は、第2積層体をさらに含み、
前記第1導電部材は、第4部分及び第5部分を含み、前記第2部分と前記第4部分との間に前記第5部分があり、
前記第2積層体は、第2磁性層と、前記第5部分と前記第2磁性層との間に設けられた第2対向磁性層と、を含み、
前記第3他端は、前記第4部分と電気的に接続され、
前記第4他端は、前記第2磁性層と電気的に接続され、
前記第4配線は、前記第3ゲート及び第4ゲートと電気的に接続され、
前記第3配線は、前記第3端及び前記第4端と電気的に接続された、構成1記載の磁気デバイス。 (Structure 6)
A third transistor including a third end, a third other end, and a third gate,
A fourth transistor including a fourth end, a fourth other end, and a fourth gate,
4th wiring and
With more
The first element further includes a second laminate.
The first conductive member includes a fourth portion and a fifth portion, and the fifth portion is located between the second portion and the fourth portion.
The second laminated body includes a second magnetic layer and a second opposed magnetic layer provided between the fifth portion and the second magnetic layer.
The third other end is electrically connected to the fourth portion.
The fourth other end is electrically connected to the second magnetic layer.
The fourth wiring is electrically connected to the third gate and the fourth gate, and is connected to the third gate and the fourth gate.
The magnetic device according toconfiguration 1, wherein the third wiring is electrically connected to the third end and the fourth end.
第3端、第3他端及び第3ゲートを含む第3トランジスタと、
第4端、第4他端及び第4ゲートを含む第4トランジスタと、
第4配線と、
をさらに備え、
前記第1素子は、第2積層体をさらに含み、
前記第1導電部材は、第4部分及び第5部分を含み、前記第2部分と前記第4部分との間に前記第5部分があり、
前記第2積層体は、第2磁性層と、前記第5部分と前記第2磁性層との間に設けられた第2対向磁性層と、を含み、
前記第3他端は、前記第4部分と電気的に接続され、
前記第4他端は、前記第2磁性層と電気的に接続され、
前記第4配線は、前記第3ゲート及び第4ゲートと電気的に接続され、
前記第3配線は、前記第3端及び前記第4端と電気的に接続された、構成1記載の磁気デバイス。 (Structure 6)
A third transistor including a third end, a third other end, and a third gate,
A fourth transistor including a fourth end, a fourth other end, and a fourth gate,
4th wiring and
With more
The first element further includes a second laminate.
The first conductive member includes a fourth portion and a fifth portion, and the fifth portion is located between the second portion and the fourth portion.
The second laminated body includes a second magnetic layer and a second opposed magnetic layer provided between the fifth portion and the second magnetic layer.
The third other end is electrically connected to the fourth portion.
The fourth other end is electrically connected to the second magnetic layer.
The fourth wiring is electrically connected to the third gate and the fourth gate, and is connected to the third gate and the fourth gate.
The magnetic device according to
(構成7)
制御部をさらに備え、
前記制御部は、前記第1配線、前記第2配線、前記第3配線及び前記第4配線と電気的に接続され、
前記制御部は、第1書き込み動作、第2書き込み動作、第1読み出し動作及び第2読み出し操作を実施可能であり、
前記第1書き込み動作において、前記制御部は、前記第2配線を選択状態として前記第1トランジスタを介して前記第1部分と前記第2部分との間に電流を供給し、
前記第2書き込み動作において、前記制御部は、前記第4配線を選択状態として前記第3トランジスタを介して前記第4部分と前記第2部分との間に電流を供給し、
前記第1読み出し動作において、前記制御部は、前記第2配線を非選択状態として前記第2トランジスタを介して前記第1積層体の電気抵抗に対応する値を検出し、
前記第2読み出し動作において、前記制御部は、前記第4配線を非選択状態として前記第4トランジスタを介して前記第2積層体の電気抵抗に対応する値を検出する、構成6記載の磁気デバイス。 (Structure 7)
With more control
The control unit is electrically connected to the first wiring, the second wiring, the third wiring, and the fourth wiring.
The control unit can perform a first write operation, a second write operation, a first read operation, and a second read operation.
In the first writing operation, the control unit supplies a current between the first portion and the second portion via the first transistor with the second wiring selected.
In the second writing operation, the control unit supplies a current between the fourth portion and the second portion via the third transistor with the fourth wiring selected.
In the first read operation, the control unit detects a value corresponding to the electric resistance of the first laminated body via the second transistor with the second wiring in a non-selected state.
In the second readout operation, the control unit detects a value corresponding to the electrical resistance of the second laminated body via the fourth transistor with the fourth wiring in a non-selected state, according to the magnetic device according to the configuration 6. ..
制御部をさらに備え、
前記制御部は、前記第1配線、前記第2配線、前記第3配線及び前記第4配線と電気的に接続され、
前記制御部は、第1書き込み動作、第2書き込み動作、第1読み出し動作及び第2読み出し操作を実施可能であり、
前記第1書き込み動作において、前記制御部は、前記第2配線を選択状態として前記第1トランジスタを介して前記第1部分と前記第2部分との間に電流を供給し、
前記第2書き込み動作において、前記制御部は、前記第4配線を選択状態として前記第3トランジスタを介して前記第4部分と前記第2部分との間に電流を供給し、
前記第1読み出し動作において、前記制御部は、前記第2配線を非選択状態として前記第2トランジスタを介して前記第1積層体の電気抵抗に対応する値を検出し、
前記第2読み出し動作において、前記制御部は、前記第4配線を非選択状態として前記第4トランジスタを介して前記第2積層体の電気抵抗に対応する値を検出する、構成6記載の磁気デバイス。 (Structure 7)
With more control
The control unit is electrically connected to the first wiring, the second wiring, the third wiring, and the fourth wiring.
The control unit can perform a first write operation, a second write operation, a first read operation, and a second read operation.
In the first writing operation, the control unit supplies a current between the first portion and the second portion via the first transistor with the second wiring selected.
In the second writing operation, the control unit supplies a current between the fourth portion and the second portion via the third transistor with the fourth wiring selected.
In the first read operation, the control unit detects a value corresponding to the electric resistance of the first laminated body via the second transistor with the second wiring in a non-selected state.
In the second readout operation, the control unit detects a value corresponding to the electrical resistance of the second laminated body via the fourth transistor with the fourth wiring in a non-selected state, according to the magnetic device according to the configuration 6. ..
(構成8)
制御部をさらに備え、
前記制御部は、前記第1配線、前記第2配線、前記第3配線及び前記第4配線と電気的に接続され、
前記制御部は、第1書き込み動作、第2書き込み動作、及び、読み出し操作を実施可能であり、
前記第1書き込み動作において、前記制御部は、前記第2配線を選択状態として前記第1トランジスタを介して前記第1部分と前記第2部分との間に電流を供給し、
前記第2書き込み動作において、前記制御部は、前記第4配線を選択状態として前記第3トランジスタを介して前記第4部分と前記第2部分との間に電流を供給し、
前記読み出し動作において、前記制御部は、前記第2配線及び前記第4配線を非選択状態として、前記第2トランジスタ及び前記第4トランジスタを介して、前記第2部分の電位に対応する値を検出する、構成6記載の磁気デバイス。 (Structure 8)
With more control
The control unit is electrically connected to the first wiring, the second wiring, the third wiring, and the fourth wiring.
The control unit can perform a first write operation, a second write operation, and a read operation.
In the first writing operation, the control unit supplies a current between the first portion and the second portion via the first transistor with the second wiring selected.
In the second writing operation, the control unit supplies a current between the fourth portion and the second portion via the third transistor with the fourth wiring selected.
In the read operation, the control unit sets the second wiring and the fourth wiring in a non-selected state, and detects a value corresponding to the potential of the second portion via the second transistor and the fourth transistor. The magnetic device according to the configuration 6.
制御部をさらに備え、
前記制御部は、前記第1配線、前記第2配線、前記第3配線及び前記第4配線と電気的に接続され、
前記制御部は、第1書き込み動作、第2書き込み動作、及び、読み出し操作を実施可能であり、
前記第1書き込み動作において、前記制御部は、前記第2配線を選択状態として前記第1トランジスタを介して前記第1部分と前記第2部分との間に電流を供給し、
前記第2書き込み動作において、前記制御部は、前記第4配線を選択状態として前記第3トランジスタを介して前記第4部分と前記第2部分との間に電流を供給し、
前記読み出し動作において、前記制御部は、前記第2配線及び前記第4配線を非選択状態として、前記第2トランジスタ及び前記第4トランジスタを介して、前記第2部分の電位に対応する値を検出する、構成6記載の磁気デバイス。 (Structure 8)
With more control
The control unit is electrically connected to the first wiring, the second wiring, the third wiring, and the fourth wiring.
The control unit can perform a first write operation, a second write operation, and a read operation.
In the first writing operation, the control unit supplies a current between the first portion and the second portion via the first transistor with the second wiring selected.
In the second writing operation, the control unit supplies a current between the fourth portion and the second portion via the third transistor with the fourth wiring selected.
In the read operation, the control unit sets the second wiring and the fourth wiring in a non-selected state, and detects a value corresponding to the potential of the second portion via the second transistor and the fourth transistor. The magnetic device according to the configuration 6.
(構成9)
前記第3部分から前記第1磁性層への第2方向は、前記第1部分から前記第2部分への第1方向と交差し、
前記第5部分から前記第2磁性層への方向は、前記第2方向に沿い、
前記第2他端から前記第3配線の一部への方向は、前記第2方向に沿い、
前記第1方向における前記第2配線の位置は、前記第1方向における前記第1部分の位置と、前記第1方向における前記第4部分の位置と、の間にあり、
前記第1方向における前記第4配線の位置は、前記第1方向における前記第2配線の位置と、前記第1方向における前記第4部分の前記位置と、の間にあり、
前記第1方向における前記第3配線の位置は、前記第1方向における前記第2配線の前記位置と、前記第1方向における前記第4配線の前記位置と、の間にある、構成6~8のいずれか1つに記載の磁気デバイス。 (Structure 9)
The second direction from the third portion to the first magnetic layer intersects the first direction from the first portion to the second portion.
The direction from the fifth portion to the second magnetic layer is along the second direction.
The direction from the second other end to a part of the third wiring is along the second direction.
The position of the second wiring in the first direction is between the position of the first portion in the first direction and the position of the fourth portion in the first direction.
The position of the fourth wiring in the first direction is between the position of the second wiring in the first direction and the position of the fourth portion in the first direction.
The position of the third wiring in the first direction is between the position of the second wiring in the first direction and the position of the fourth wiring in the first direction, configurations 6 to 8. The magnetic device according to any one of.
前記第3部分から前記第1磁性層への第2方向は、前記第1部分から前記第2部分への第1方向と交差し、
前記第5部分から前記第2磁性層への方向は、前記第2方向に沿い、
前記第2他端から前記第3配線の一部への方向は、前記第2方向に沿い、
前記第1方向における前記第2配線の位置は、前記第1方向における前記第1部分の位置と、前記第1方向における前記第4部分の位置と、の間にあり、
前記第1方向における前記第4配線の位置は、前記第1方向における前記第2配線の位置と、前記第1方向における前記第4部分の前記位置と、の間にあり、
前記第1方向における前記第3配線の位置は、前記第1方向における前記第2配線の前記位置と、前記第1方向における前記第4配線の前記位置と、の間にある、構成6~8のいずれか1つに記載の磁気デバイス。 (Structure 9)
The second direction from the third portion to the first magnetic layer intersects the first direction from the first portion to the second portion.
The direction from the fifth portion to the second magnetic layer is along the second direction.
The direction from the second other end to a part of the third wiring is along the second direction.
The position of the second wiring in the first direction is between the position of the first portion in the first direction and the position of the fourth portion in the first direction.
The position of the fourth wiring in the first direction is between the position of the second wiring in the first direction and the position of the fourth portion in the first direction.
The position of the third wiring in the first direction is between the position of the second wiring in the first direction and the position of the fourth wiring in the first direction, configurations 6 to 8. The magnetic device according to any one of.
(構成10)
前記第1他端から前記第1部分への方向は、前記第2方向に沿い、
前記第1端から前記第3配線の一部への方向は、前記第2方向に沿い、
前記第3他端から前記第4部分への方向は、前記第2方向に沿う、構成6~9のいずれか1つに記載の磁気デバイス。 (Structure 10)
The direction from the first other end to the first portion is along the second direction.
The direction from the first end to a part of the third wiring is along the second direction.
The magnetic device according to any one of configurations 6 to 9, wherein the direction from the third other end to the fourth portion is along the second direction.
前記第1他端から前記第1部分への方向は、前記第2方向に沿い、
前記第1端から前記第3配線の一部への方向は、前記第2方向に沿い、
前記第3他端から前記第4部分への方向は、前記第2方向に沿う、構成6~9のいずれか1つに記載の磁気デバイス。 (Structure 10)
The direction from the first other end to the first portion is along the second direction.
The direction from the first end to a part of the third wiring is along the second direction.
The magnetic device according to any one of configurations 6 to 9, wherein the direction from the third other end to the fourth portion is along the second direction.
(構成11)
前記第1磁性層と前記第2他端とを電気的に接続する第1接続部材と、
前記第2磁性層と前記第4他端とを電気的に接続する第2接続部材と、
をさらに備え、
前記第2配線から前記第1接続部材への方向は、前記第2方向に沿い、
前記第4配線から前記第2接続部材への方向は、前記第2方向に沿う、構成10記載の磁気デバイス。 (Structure 11)
A first connecting member that electrically connects the first magnetic layer and the second other end,
A second connecting member that electrically connects the second magnetic layer and the fourth other end,
With more
The direction from the second wiring to the first connecting member is along the second direction.
The magnetic device according to theconfiguration 10, wherein the direction from the fourth wiring to the second connecting member is along the second direction.
前記第1磁性層と前記第2他端とを電気的に接続する第1接続部材と、
前記第2磁性層と前記第4他端とを電気的に接続する第2接続部材と、
をさらに備え、
前記第2配線から前記第1接続部材への方向は、前記第2方向に沿い、
前記第4配線から前記第2接続部材への方向は、前記第2方向に沿う、構成10記載の磁気デバイス。 (Structure 11)
A first connecting member that electrically connects the first magnetic layer and the second other end,
A second connecting member that electrically connects the second magnetic layer and the fourth other end,
With more
The direction from the second wiring to the first connecting member is along the second direction.
The magnetic device according to the
(構成12)
第5配線をさらに備え、
前記第5配線は、前記第1部分及び前記第4部分の少なくともいずれかと電気的に接続された、構成6記載の磁気デバイス。 (Structure 12)
With a fifth wiring
The magnetic device according to configuration 6, wherein the fifth wiring is electrically connected to at least one of the first portion and the fourth portion.
第5配線をさらに備え、
前記第5配線は、前記第1部分及び前記第4部分の少なくともいずれかと電気的に接続された、構成6記載の磁気デバイス。 (Structure 12)
With a fifth wiring
The magnetic device according to configuration 6, wherein the fifth wiring is electrically connected to at least one of the first portion and the fourth portion.
(構成13)
第3接続部材及び第4接続部材をさらに備え、
前記第3接続部材は、前記第5配線と前記第1部分とを電気的に接続し、
前記第4接続部材は、前記第5配線と前記第4部分とを電気的に接続し、
前記第3接続部材は、前記第2方向において前記第1他端と重なり、
前記第4接続部材は、前記第2方向において前記第3他端と重なる、構成12記載の磁気デバイス。 (Structure 13)
Further provided with a third connecting member and a fourth connecting member,
The third connecting member electrically connects the fifth wiring and the first portion.
The fourth connecting member electrically connects the fifth wiring and the fourth portion.
The third connecting member overlaps with the first other end in the second direction.
The magnetic device according toconfiguration 12, wherein the fourth connecting member overlaps the third other end in the second direction.
第3接続部材及び第4接続部材をさらに備え、
前記第3接続部材は、前記第5配線と前記第1部分とを電気的に接続し、
前記第4接続部材は、前記第5配線と前記第4部分とを電気的に接続し、
前記第3接続部材は、前記第2方向において前記第1他端と重なり、
前記第4接続部材は、前記第2方向において前記第3他端と重なる、構成12記載の磁気デバイス。 (Structure 13)
Further provided with a third connecting member and a fourth connecting member,
The third connecting member electrically connects the fifth wiring and the first portion.
The fourth connecting member electrically connects the fifth wiring and the fourth portion.
The third connecting member overlaps with the first other end in the second direction.
The magnetic device according to
(構成14)
前記第1部分と電気的に接続された第1導電部と、
前記第2部分と電気的に接続された第2導電部と、
をさらに備え、
前記第1導電部から前記第2導電部への方向は、第1方向に沿い、
前記第1部分は、前記第1方向において、前記第1導電部の一部と前記第2導電部の一部との間にあり、
前記第2部分は、前記第1方向において、前記第1部分と前記第2導電部の前記一部との間にある、構成1~13のいずれか1つに記載の磁気デバイス。 (Structure 14)
A first conductive portion electrically connected to the first portion,
A second conductive portion electrically connected to the second portion,
With more
The direction from the first conductive portion to the second conductive portion is along the first direction.
The first portion is located between a part of the first conductive portion and a part of the second conductive portion in the first direction.
The magnetic device according to any one ofconfigurations 1 to 13, wherein the second portion is located between the first portion and the portion of the second conductive portion in the first direction.
前記第1部分と電気的に接続された第1導電部と、
前記第2部分と電気的に接続された第2導電部と、
をさらに備え、
前記第1導電部から前記第2導電部への方向は、第1方向に沿い、
前記第1部分は、前記第1方向において、前記第1導電部の一部と前記第2導電部の一部との間にあり、
前記第2部分は、前記第1方向において、前記第1部分と前記第2導電部の前記一部との間にある、構成1~13のいずれか1つに記載の磁気デバイス。 (Structure 14)
A first conductive portion electrically connected to the first portion,
A second conductive portion electrically connected to the second portion,
With more
The direction from the first conductive portion to the second conductive portion is along the first direction.
The first portion is located between a part of the first conductive portion and a part of the second conductive portion in the first direction.
The magnetic device according to any one of
(構成15)
前記第1トランジスタ及び前記第2トランジスタの少なくともいずれかは、fin型トランジスタを含む、構成1~14のいずれか1つに記載の磁気デバイス。 (Structure 15)
The magnetic device according to any one ofconfigurations 1 to 14, wherein at least one of the first transistor and the second transistor includes a fin type transistor.
前記第1トランジスタ及び前記第2トランジスタの少なくともいずれかは、fin型トランジスタを含む、構成1~14のいずれか1つに記載の磁気デバイス。 (Structure 15)
The magnetic device according to any one of
(構成16)
第1導電部材と第1積層体とを含む第1素子であって、前記第1導電部材は、第1部分と、第2部分と、前記第1部分と前記第2部分との間の第3部分と、を含み、前記第1積層体は、第1磁性層と、前記第3部分と前記第1磁性層との間に設けられた第1対向磁性層と、を含む、前記第1素子と、
前記第1部分と電気的に接続された第1導電部と、
前記第2部分と電気的に接続された第2導電部と、
トランジスタと、
を備え、
前記第1導電部から前記第2導電部への方向は、第1方向に沿い、
前記第1部分は、前記第1方向において、前記第1導電部の一部から前記第2導電部の一部との間にあり、
前記第2部分は、前記第1方向において、前記第1部分と前記第2導電部の前記一部との間にある、
前記第1導電部及び前記第2導電部の少なくとも1つは、前記トランジスタと電気的に接続された、磁気デバイス。 (Structure 16)
A first element including a first conductive member and a first laminated body, wherein the first conductive member is a first portion between a first portion, a second portion, and the first portion and the second portion. The first laminated body includes a first magnetic layer and a first opposed magnetic layer provided between the third portion and the first magnetic layer. With the element
A first conductive portion electrically connected to the first portion,
A second conductive portion electrically connected to the second portion,
Transistor and
With
The direction from the first conductive portion to the second conductive portion is along the first direction.
The first portion is located between a part of the first conductive portion and a part of the second conductive portion in the first direction.
The second portion is located between the first portion and the portion of the second conductive portion in the first direction.
A magnetic device in which at least one of the first conductive portion and the second conductive portion is electrically connected to the transistor.
第1導電部材と第1積層体とを含む第1素子であって、前記第1導電部材は、第1部分と、第2部分と、前記第1部分と前記第2部分との間の第3部分と、を含み、前記第1積層体は、第1磁性層と、前記第3部分と前記第1磁性層との間に設けられた第1対向磁性層と、を含む、前記第1素子と、
前記第1部分と電気的に接続された第1導電部と、
前記第2部分と電気的に接続された第2導電部と、
トランジスタと、
を備え、
前記第1導電部から前記第2導電部への方向は、第1方向に沿い、
前記第1部分は、前記第1方向において、前記第1導電部の一部から前記第2導電部の一部との間にあり、
前記第2部分は、前記第1方向において、前記第1部分と前記第2導電部の前記一部との間にある、
前記第1導電部及び前記第2導電部の少なくとも1つは、前記トランジスタと電気的に接続された、磁気デバイス。 (Structure 16)
A first element including a first conductive member and a first laminated body, wherein the first conductive member is a first portion between a first portion, a second portion, and the first portion and the second portion. The first laminated body includes a first magnetic layer and a first opposed magnetic layer provided between the third portion and the first magnetic layer. With the element
A first conductive portion electrically connected to the first portion,
A second conductive portion electrically connected to the second portion,
Transistor and
With
The direction from the first conductive portion to the second conductive portion is along the first direction.
The first portion is located between a part of the first conductive portion and a part of the second conductive portion in the first direction.
The second portion is located between the first portion and the portion of the second conductive portion in the first direction.
A magnetic device in which at least one of the first conductive portion and the second conductive portion is electrically connected to the transistor.
(構成17)
前記第1部分は、前記第1方向と交差する第1側面を含み、
前記第2部分は、前記第1方向と交差する第2側面を含み、
前記第1導電部の前記一部は、前記第1側面と対向し、
前記第2導電部の前記一部は、前記第2側面と対向する、構成16記載の磁気デバイス。 (Structure 17)
The first portion includes a first side surface that intersects the first direction.
The second portion includes a second side surface that intersects the first direction.
The part of the first conductive portion faces the first side surface, and is opposed to the first side surface.
16. The magnetic device according to configuration 16, wherein the part of the second conductive portion faces the second side surface.
前記第1部分は、前記第1方向と交差する第1側面を含み、
前記第2部分は、前記第1方向と交差する第2側面を含み、
前記第1導電部の前記一部は、前記第1側面と対向し、
前記第2導電部の前記一部は、前記第2側面と対向する、構成16記載の磁気デバイス。 (Structure 17)
The first portion includes a first side surface that intersects the first direction.
The second portion includes a second side surface that intersects the first direction.
The part of the first conductive portion faces the first side surface, and is opposed to the first side surface.
16. The magnetic device according to configuration 16, wherein the part of the second conductive portion faces the second side surface.
(構成18)
第1絶縁部分と、
第2絶縁部分と、
をさらに備え、
前記第1絶縁部分は、前記第1積層体と前記第1導電部との間にあり、
前記第2絶縁部分は、前記第1積層体と前記第2導電部との間にある、構成16記載の磁気デバイス。 (Structure 18)
With the first insulation part
With the second insulation part
With more
The first insulating portion is located between the first laminated body and the first conductive portion.
The magnetic device according to configuration 16, wherein the second insulating portion is located between the first laminated body and the second conductive portion.
第1絶縁部分と、
第2絶縁部分と、
をさらに備え、
前記第1絶縁部分は、前記第1積層体と前記第1導電部との間にあり、
前記第2絶縁部分は、前記第1積層体と前記第2導電部との間にある、構成16記載の磁気デバイス。 (Structure 18)
With the first insulation part
With the second insulation part
With more
The first insulating portion is located between the first laminated body and the first conductive portion.
The magnetic device according to configuration 16, wherein the second insulating portion is located between the first laminated body and the second conductive portion.
(構成19)
第1導電部材と第1積層体とを含む第1素子であって、前記第1導電部材は、第1部分と、第2部分と、前記第1部分と前記第2部分との間の第3部分と、を含み、前記第1積層体は、第1磁性層と、前記第3部分と前記第1磁性層との間に設けられた第1対向磁性層と、を含む、前記第1素子と、
fin型の第1トランジスタと、
を備え、
前記第1部分から前記第2部分への方向は、第1方向に沿い、
前記第3部分から前記第1磁性層への第2方向は、前記第1方向と交差し、
前記第1トランジスタは第1半導体部材を含み、
前記第1半導体部材の少なくとも一部から前記第1導電部材の少なくとも一部への方向は、前記第2方向に沿う、磁気デバイス。 (Structure 19)
A first element including a first conductive member and a first laminated body, wherein the first conductive member is a first portion between a first portion, a second portion, and the first portion and the second portion. The first laminated body includes a first magnetic layer and a first opposed magnetic layer provided between the third portion and the first magnetic layer. With the element
Fin type first transistor and
With
The direction from the first part to the second part is along the first direction.
The second direction from the third portion to the first magnetic layer intersects the first direction.
The first transistor includes a first semiconductor member.
A magnetic device whose direction from at least a part of the first semiconductor member to at least a part of the first conductive member is along the second direction.
第1導電部材と第1積層体とを含む第1素子であって、前記第1導電部材は、第1部分と、第2部分と、前記第1部分と前記第2部分との間の第3部分と、を含み、前記第1積層体は、第1磁性層と、前記第3部分と前記第1磁性層との間に設けられた第1対向磁性層と、を含む、前記第1素子と、
fin型の第1トランジスタと、
を備え、
前記第1部分から前記第2部分への方向は、第1方向に沿い、
前記第3部分から前記第1磁性層への第2方向は、前記第1方向と交差し、
前記第1トランジスタは第1半導体部材を含み、
前記第1半導体部材の少なくとも一部から前記第1導電部材の少なくとも一部への方向は、前記第2方向に沿う、磁気デバイス。 (Structure 19)
A first element including a first conductive member and a first laminated body, wherein the first conductive member is a first portion between a first portion, a second portion, and the first portion and the second portion. The first laminated body includes a first magnetic layer and a first opposed magnetic layer provided between the third portion and the first magnetic layer. With the element
Fin type first transistor and
With
The direction from the first part to the second part is along the first direction.
The second direction from the third portion to the first magnetic layer intersects the first direction.
The first transistor includes a first semiconductor member.
A magnetic device whose direction from at least a part of the first semiconductor member to at least a part of the first conductive member is along the second direction.
(構成20)
前記第1半導体部材は、前記第1方向に沿って延び、
前記第1方向及び前記第2方向を含む平面と交差す第3方向における前記第1半導体部材の位置は、前記第3方向における前記第1導電部材の中心の位置からシフトしている、構成19記載の磁気デバイス。 (Structure 20)
The first semiconductor member extends along the first direction.
The position of the first semiconductor member in the third direction intersecting the plane including the first direction and the second direction is shifted from the position of the center of the first conductive member in the third direction. The magnetic device described.
前記第1半導体部材は、前記第1方向に沿って延び、
前記第1方向及び前記第2方向を含む平面と交差す第3方向における前記第1半導体部材の位置は、前記第3方向における前記第1導電部材の中心の位置からシフトしている、構成19記載の磁気デバイス。 (Structure 20)
The first semiconductor member extends along the first direction.
The position of the first semiconductor member in the third direction intersecting the plane including the first direction and the second direction is shifted from the position of the center of the first conductive member in the third direction. The magnetic device described.
(構成21)
前記第1半導体部材は、前記第1方向及び前記第2方向を含む平面と交差す第3方向に沿って延び、
前記第1方向における前記第1半導体部材の位置は、前記第1方向における前記第1導電部材の中心の位置からシフトしている、構成19記載の磁気デバイス。 (Structure 21)
The first semiconductor member extends along a third direction intersecting a plane including the first direction and the second direction.
The magnetic device according to configuration 19, wherein the position of the first semiconductor member in the first direction is shifted from the position of the center of the first conductive member in the first direction.
前記第1半導体部材は、前記第1方向及び前記第2方向を含む平面と交差す第3方向に沿って延び、
前記第1方向における前記第1半導体部材の位置は、前記第1方向における前記第1導電部材の中心の位置からシフトしている、構成19記載の磁気デバイス。 (Structure 21)
The first semiconductor member extends along a third direction intersecting a plane including the first direction and the second direction.
The magnetic device according to configuration 19, wherein the position of the first semiconductor member in the first direction is shifted from the position of the center of the first conductive member in the first direction.
(構成22)
前記第1半導体部材は、第3方向に延び、
前記第3方向は、前記第1方向及び前記第2方向と交差する平面と交差した、構成19記載の磁気デバイス。 (Structure 22)
The first semiconductor member extends in the third direction.
The magnetic device according to configuration 19, wherein the third direction intersects a plane intersecting the first direction and the second direction.
前記第1半導体部材は、第3方向に延び、
前記第3方向は、前記第1方向及び前記第2方向と交差する平面と交差した、構成19記載の磁気デバイス。 (Structure 22)
The first semiconductor member extends in the third direction.
The magnetic device according to configuration 19, wherein the third direction intersects a plane intersecting the first direction and the second direction.
(第4実施形態)
図20は、第4実施形態に係る磁気デバイスを例示する模式的斜視図である。
図21~図24は、第4実施形態に係る磁気デバイスを例示する模式的平面図である。
図21~図24は、磁気デバイスの各層の平面図に対応する。 (Fourth Embodiment)
FIG. 20 is a schematic perspective view illustrating the magnetic device according to the fourth embodiment.
21 to 24 are schematic plan views illustrating the magnetic device according to the fourth embodiment.
21 to 24 correspond to a plan view of each layer of the magnetic device.
図20は、第4実施形態に係る磁気デバイスを例示する模式的斜視図である。
図21~図24は、第4実施形態に係る磁気デバイスを例示する模式的平面図である。
図21~図24は、磁気デバイスの各層の平面図に対応する。 (Fourth Embodiment)
FIG. 20 is a schematic perspective view illustrating the magnetic device according to the fourth embodiment.
21 to 24 are schematic plan views illustrating the magnetic device according to the fourth embodiment.
21 to 24 correspond to a plan view of each layer of the magnetic device.
図20に示すように、実施形態に係る磁気デバイス140は、第1素子11E、第2素子12E、第1トランジスタTr1、第2トランジスタTr2、第3トランジスタTr3、第4トランジスタTr4、第5トランジスタTr5、第6トランジスタTr6、第1配線77A、第2配線77B、第3配線77C、第4配線77D、及び、第5配線77Eを含む。
As shown in FIG. 20, the magnetic device 140 according to the embodiment includes a first element 11E, a second element 12E, a first transistor Tr1, a second transistor Tr2, a third transistor Tr3, a fourth transistor Tr4, and a fifth transistor Tr5. , 6th transistor Tr6, 1st wiring 77A, 2nd wiring 77B, 3rd wiring 77C, 4th wiring 77D, and 5th wiring 77E.
図20及び図21に示すように、第1トランジスタTr1は、第1端Ts1、第1他端Td1及び第1ゲートTg1を含み、第1導電形である。第2トランジスタTr2は、第2端Ts2、第2他端Td2及び第2ゲートTg2を含み、第2導電形である。第3トランジスタTr3は、第3端Ts3、第3他端Td3及び第3ゲートTg3を含み、第1導電形である。第4トランジスタTr4は、第4端Ts4、第4他端Td4及び第4ゲートTg4を含み、第2導電形である。第5トランジスタTr5は、第5端Ts5、第5他端Td5及び第5ゲートTg5を含み、第1導電形である。第6トランジスタTr6は、第6端Ts6、第6他端Td6及び第6ゲートTg6を含み、第1導電形である。以下では、第1導電形がn形であり、第2導電形がp形とする。
As shown in FIGS. 20 and 21, the first transistor Tr1 includes a first end Ts1, a first other end Td1, and a first gate Tg1, and is a first conductive type. The second transistor Tr2 includes a second end Ts2, a second other end Td2, and a second gate Tg2, and is a second conductive type. The third transistor Tr3 includes a third end Ts3, a third other end Td3, and a third gate Tg3, and is a first conductive type. The fourth transistor Tr4 includes a fourth end Ts4, a fourth other end Td4, and a fourth gate Tg4, and is a second conductive type. The fifth transistor Tr5 includes a fifth end Ts5, a fifth other end Td5, and a fifth gate Tg5, and is a first conductive type. The sixth transistor Tr6 includes a sixth end Ts6, a sixth other end Td6, and a sixth gate Tg6, and is a first conductive type. In the following, the first conductive type is n-type and the second conductive type is p-type.
第1端Ts1の少なくとも一部は、第3端Ts3の少なくとも一部と重なっても良い。第2端Ts2の少なくとも一部は、第4端Ts4の少なくとも一部と重なっても良い。第5端Ts5の少なくとも一部は、第6端Ts6の少なくとも一部と重なっても良い。第1端Ts1は、第3端Ts3と実質的に同じでも良い。第2端Ts2は、第4端Ts4と実質的に同じでも良い。第5端Ts5は、第6端Ts6と実質的に同じでも良い。
At least a part of the first end Ts1 may overlap with at least a part of the third end Ts3. At least a part of the second end Ts2 may overlap with at least a part of the fourth end Ts4. At least a part of the fifth end Ts5 may overlap with at least a part of the sixth end Ts6. The first end Ts1 may be substantially the same as the third end Ts3. The second end Ts2 may be substantially the same as the fourth end Ts4. The fifth end Ts5 may be substantially the same as the sixth end Ts6.
図20に示すように、第1素子11E及び第2素子12Eのそれぞれは、第1導電部材21、第1積層体S1、及び、第2積層体S2を含む。
As shown in FIG. 20, each of the first element 11E and the second element 12E includes a first conductive member 21, a first laminated body S1, and a second laminated body S2.
第1導電部材21は、第1部分21aと、第2部分21bと、第3部分21cと、第4部分21dと、第5部分21eと、を含む。第1部分21aと第4部分21dとの間に第2部分21bがある。第1部分21aと第2部分21bとの間に第3部分21cがある。第2部分21bと第4部分21dとの間に第5部分21eがある。
The first conductive member 21 includes a first portion 21a, a second portion 21b, a third portion 21c, a fourth portion 21d, and a fifth portion 21e. There is a second portion 21b between the first portion 21a and the fourth portion 21d. There is a third portion 21c between the first portion 21a and the second portion 21b. There is a fifth portion 21e between the second portion 21b and the fourth portion 21d.
第1積層体S1は、第1磁性層11と、第3部分21cと第1磁性層11との間に設けられた第1対向磁性層11oと、を含む。第1対向磁性層11oと第1磁性層11との間に、第1非磁性層11nが設けられても良い。
The first laminated body S1 includes a first magnetic layer 11 and a first opposed magnetic layer 11o provided between the third portion 21c and the first magnetic layer 11. A first non-magnetic layer 11n may be provided between the first opposed magnetic layer 11o and the first magnetic layer 11.
第2積層体S2は、第2磁性層12と、第5部分21eと第2磁性層12との間に設けられた第2対向磁性層12oと、を含む。第2対向磁性層12oと第2磁性層12との間に、第2非磁性層12nが設けられても良い。
The second laminated body S2 includes a second magnetic layer 12 and a second opposed magnetic layer 12o provided between the fifth portion 21e and the second magnetic layer 12. A second non-magnetic layer 12n may be provided between the second opposed magnetic layer 12o and the second magnetic layer 12.
図20に示すように、第1他端Td1は、第1素子11Eの第1導電部材21の第1部分21aと電気的に接続される。この例では、この接続は、導電部75aにより行われる。
As shown in FIG. 20, the first other end Td1 is electrically connected to the first portion 21a of the first conductive member 21 of the first element 11E. In this example, this connection is made by the conductive section 75a.
第2他端Td2は、第1素子11Eの第1磁性層11及び第2素子12Eの第1磁性層11と電気的に接続される。この例では、この接続は、第1接続部材CN1により行われる。
The second other end Td2 is electrically connected to the first magnetic layer 11 of the first element 11E and the first magnetic layer 11 of the second element 12E. In this example, this connection is made by the first connecting member CN1.
第3他端Td3は、第1素子11Eの第1導電部材21の第4部分21dと電気的に接続される。この例では、この接続は、導電部75cにより行われる。
The third other end Td3 is electrically connected to the fourth portion 21d of the first conductive member 21 of the first element 11E. In this example, this connection is made by the conductive section 75c.
第4他端Td4は、第1素子11Eの第2磁性層12、及び、第2素子12Eの第2磁性層12と電気的に接続される。この例では、この接続は、第2接続部材CN2により行われる。
The fourth other end Td4 is electrically connected to the second magnetic layer 12 of the first element 11E and the second magnetic layer 12 of the second element 12E. In this example, this connection is made by the second connecting member CN2.
第5他端Td5は、第2素子12Eの第1導電部材21の第1部分21aと電気的に接続される。この例では、この接続は、導電部75dにより行われる。
The fifth other end Td5 is electrically connected to the first portion 21a of the first conductive member 21 of the second element 12E. In this example, this connection is made by the conductive section 75d.
第6他端Td6は、第2素子12Eの第1導電部材21の第4部分21dと電気的に接続される。この例では、この接続は、導電部75eにより行われる。
The sixth other end Td6 is electrically connected to the fourth portion 21d of the first conductive member 21 of the second element 12E. In this example, this connection is made by the conductive section 75e.
第1配線77Aは、第1素子11Eの第1導電部材21の第2部分21bと電気的に接続される。この例では、この接続は、導電部75bにより行われる。第1配線77Aは、例えば、書き込み用及び読み出し用のビット線W/R-BL1である。
The first wiring 77A is electrically connected to the second portion 21b of the first conductive member 21 of the first element 11E. In this example, this connection is made by the conductive section 75b. The first wiring 77A is, for example, a bit line W / R-BL1 for writing and reading.
第2配線77Bは、第1ゲートTg1、第2ゲートTg2及び第5ゲートTg5と電気的に接続される。第2配線77Bは、例えば、書き込み用及び読み出し用のワード線W/R-WL1である。
The second wiring 77B is electrically connected to the first gate Tg1, the second gate Tg2, and the fifth gate Tg5. The second wiring 77B is, for example, a word line W / R-WL1 for writing and reading.
第3配線77Cは、第1端Ts1、第2端Ts2、第3端Ts3、第4端Ts4、第5端Ts5及び第6端Ts6と電気的に接続される。第3配線77Cは、例えば、ソース線SLである。実施形態において、トランジスタの極性毎に、第1端Ts1、第3端Ts3、第5端Ts5及び第6端Ts6が電気的に接続され、第2端Ts2と第4端Ts4とが電気的に接続されてもよい。
The third wiring 77C is electrically connected to the first end Ts1, the second end Ts2, the third end Ts3, the fourth end Ts4, the fifth end Ts5, and the sixth end Ts6. The third wiring 77C is, for example, a source line SL. In the embodiment, the first end Ts1, the third end Ts3, the fifth end Ts5 and the sixth end Ts6 are electrically connected for each polarity of the transistor, and the second end Ts2 and the fourth end Ts4 are electrically connected. May be connected.
第4配線77Dは、第3ゲートTg3、第4ゲートTg4及び第6ゲートTg6と電気的に接続される。第4配線77Dは、例えば、書き込み用及び読み出し用のワード線W/R-WL2である。
The fourth wiring 77D is electrically connected to the third gate Tg3, the fourth gate Tg4, and the sixth gate Tg6. The fourth wiring 77D is, for example, a word line W / R-WL2 for writing and reading.
第5配線77Eは、第2素子11Eの第1導電部材21の第2部分21bと電気的に接続される。この例では、この接続は、導電部75fにより行われる。第5配線77Eは、例えば、書き込み用及び読み出し用のビット線W/R-BL1である。
The fifth wiring 77E is electrically connected to the second portion 21b of the first conductive member 21 of the second element 11E. In this example, this connection is made by the conductive section 75f. The fifth wiring 77E is, for example, a bit line W / R-BL1 for writing and reading.
例えば、制御部70が、第1配線77A、第2配線77B、第3配線77C、第4配線77D、第5配線77E、導電部75b及び導電部75fと電気的に接続される。制御部70により、第1素子11E及び第2素子12Eについての書き込み動作及び読み出し動作が行われる。
For example, the control unit 70 is electrically connected to the first wiring 77A, the second wiring 77B, the third wiring 77C, the fourth wiring 77D, the fifth wiring 77E, the conductive unit 75b, and the conductive unit 75f. The control unit 70 performs a writing operation and a reading operation on the first element 11E and the second element 12E.
磁気デバイス140においては、読み出し用のトランジスタ(第2トランジスタTr2及び第4トランジスタTr4)が、第1素子11E及び第2素子12Eにシェアされる。トランジスタの数が削減できる。高密度化が可能な磁気デバイスを提供できる。トランジスタがシェアされることで、例えば消費電力を低減できる。
In the magnetic device 140, the reading transistors (second transistor Tr2 and fourth transistor Tr4) are shared by the first element 11E and the second element 12E. The number of transistors can be reduced. It is possible to provide a magnetic device capable of increasing the density. By sharing the transistor, for example, power consumption can be reduced.
図21に示すように、この例では、第2配線77B、第3配線77C及び第4配線77Dは、Y軸方向に延びる。第2トランジスタTr2は、Y軸方向において、第1トランジスタTr1と第5トランジスタTr5との間にある。第4トランジスタTr4は、Y軸方向において、第3トランジスタTr3と第6トランジスタTr6との間にある。第1ゲートTg1、第2ゲートTg2及び第5ゲートTg5は、Z軸方向において、第2配線77Bと重なる。第3ゲートTg3、第4ゲートTg4及び第6ゲートTg6は、Z軸方向において、第4配線77Dと重なる。
As shown in FIG. 21, in this example, the second wiring 77B, the third wiring 77C, and the fourth wiring 77D extend in the Y-axis direction. The second transistor Tr2 is located between the first transistor Tr1 and the fifth transistor Tr5 in the Y-axis direction. The fourth transistor Tr4 is located between the third transistor Tr3 and the sixth transistor Tr6 in the Y-axis direction. The first gate Tg1, the second gate Tg2, and the fifth gate Tg5 overlap with the second wiring 77B in the Z-axis direction. The third gate Tg3, the fourth gate Tg4, and the sixth gate Tg6 overlap with the fourth wiring 77D in the Z-axis direction.
図22に示すように、この例では、Z軸方向において、第1素子11Eの第1導電部材21は、第1トランジスタTr1及び第3トランジスタTr3と重なる。この例では、Z軸方向において、第2素子12Eの第1導電部材21は、第5トランジスタTr5及び第6トランジスタTr6と重なる。第1素子11Eの第1積層体S1は、Z軸方向において、第1ゲートTg1と重なる。第1素子11Eの第2積層体S2は、Z軸方向において、第3ゲートTg3と重なる。第2素子12Eの第1積層体S1は、Z軸方向において、第5ゲートTg5と重なる。第2素子12Eの第2積層体S2は、Z軸方向において、第6ゲートTg6と重なる。
As shown in FIG. 22, in this example, the first conductive member 21 of the first element 11E overlaps the first transistor Tr1 and the third transistor Tr3 in the Z-axis direction. In this example, in the Z-axis direction, the first conductive member 21 of the second element 12E overlaps the fifth transistor Tr5 and the sixth transistor Tr6. The first laminated body S1 of the first element 11E overlaps with the first gate Tg1 in the Z-axis direction. The second laminated body S2 of the first element 11E overlaps with the third gate Tg3 in the Z-axis direction. The first laminated body S1 of the second element 12E overlaps with the fifth gate Tg5 in the Z-axis direction. The second laminated body S2 of the second element 12E overlaps with the sixth gate Tg6 in the Z-axis direction.
図23に示すように、第1接続部材CN1は、Z軸方向において、第1素子11Eの第1磁性層11、第2他端Td2、及び、第2素子12Eの第1磁性層11と重なる。第2接続部材CN2は、Z軸方向において、第1素子11Eの第2磁性層12、第4他端Td4、及び、第2素子12Eの第2磁性層12と重なる。実施形態において、第2トランジスタTr2及び第4トランジスタTr4の少なくともいずれかは、第1導電部材21と重ならない領域を含んでも良い。
As shown in FIG. 23, the first connecting member CN1 overlaps the first magnetic layer 11 of the first element 11E, the second other end Td2, and the first magnetic layer 11 of the second element 12E in the Z-axis direction. .. The second connecting member CN2 overlaps the second magnetic layer 12 of the first element 11E, the fourth other end Td4, and the second magnetic layer 12 of the second element 12E in the Z-axis direction. In the embodiment, at least one of the second transistor Tr2 and the fourth transistor Tr4 may include a region that does not overlap with the first conductive member 21.
図24に示すように、第1配線77A、及び、第5配線77Eは、X軸方向に沿って延びる。
As shown in FIG. 24, the first wiring 77A and the fifth wiring 77E extend along the X-axis direction.
図25は、第4実施形態に係る磁気デバイスを例示する模式的斜視図である。
図26~図29は、第4実施形態に係る磁気デバイスを例示する模式的平面図である。
図26~図29は、磁気デバイスの各層の平面図に対応する。 FIG. 25 is a schematic perspective view illustrating the magnetic device according to the fourth embodiment.
26 to 29 are schematic plan views illustrating the magnetic device according to the fourth embodiment.
26-29 correspond to the plan view of each layer of the magnetic device.
図26~図29は、第4実施形態に係る磁気デバイスを例示する模式的平面図である。
図26~図29は、磁気デバイスの各層の平面図に対応する。 FIG. 25 is a schematic perspective view illustrating the magnetic device according to the fourth embodiment.
26 to 29 are schematic plan views illustrating the magnetic device according to the fourth embodiment.
26-29 correspond to the plan view of each layer of the magnetic device.
図25に示すように、実施形態に係る磁気デバイス141においては、磁気デバイス141に関して説明した第1素子11E及び第2素子12Eに加えて、第3素子13Eが設けられる。第4素子14E、第5素子15E及び第6素子16Eがさらに設けられても良い。磁気デバイス141における第1素子11E及び第2素子12Eの構成は、磁気デバイス140における第1素子11E及び第2素子12Eの構成と同様である。
As shown in FIG. 25, in the magnetic device 141 according to the embodiment, the third element 13E is provided in addition to the first element 11E and the second element 12E described with respect to the magnetic device 141. The fourth element 14E, the fifth element 15E, and the sixth element 16E may be further provided. The configuration of the first element 11E and the second element 12E in the magnetic device 141 is the same as the configuration of the first element 11E and the second element 12E in the magnetic device 140.
磁気デバイス141は、第3素子13E、第7トランジスタTr7、第8トランジスタTr8、第9トランジスタTr9、第6配線77F、第7配線77G、第8配線77H及び第9配線77Iを含む。
The magnetic device 141 includes a third element 13E, a seventh transistor Tr7, an eighth transistor Tr8, a ninth transistor Tr9, a sixth wiring 77F, a seventh wiring 77G, an eighth wiring 77H, and a ninth wiring 77I.
図25及び図26に示すように、第7トランジスタTr7は、第7端Ts7、第7他端Td7及び第7ゲートTg7を含み、第1導電形(例えばn形)である。第8トランジスタTr8は、第8端Ts8、第8他端Td8及び第8ゲートTg8を含み、第2導電形(例えばp形)である。第9トランジスタTr9は、第9端Ts9、第9他端Td9及び第9ゲートTg9を含み、第2導電形(例えばp形)である。
As shown in FIGS. 25 and 26, the seventh transistor Tr7 includes a seventh end Ts7, a seventh other end Td7, and a seventh gate Tg7, and is a first conductive type (for example, n type). The eighth transistor Tr8 includes an eighth end Ts8, an eighth other end Td8, and an eighth gate Tg8, and is a second conductive type (for example, p type). The ninth transistor Tr9 includes a ninth end Ts9, a ninth other end Td9, and a ninth gate Tg9, and is a second conductive type (for example, p type).
図25に示すように、第2素子13Eは、第1導電部材21と第1積層体S1と第2積層体S2とを含む。第1素子11Eの第1導電部材21の第4部分21dは、第3素子13Eの第1導電部材21の第1部分21aと電気的に接続される。第1素子11Eの第1導電部材21の第4部分21dは、第3素子13Eの第1導電部材21の第1部分21aと連続しても良い。第1素子11Eの第1導電部材21の第4部分21dと、第3素子13Eの第1導電部材21の第1部分21aと、の境界は、明確でも不明確でも良い。
As shown in FIG. 25, the second element 13E includes the first conductive member 21, the first laminated body S1, and the second laminated body S2. The fourth portion 21d of the first conductive member 21 of the first element 11E is electrically connected to the first portion 21a of the first conductive member 21 of the third element 13E. The fourth portion 21d of the first conductive member 21 of the first element 11E may be continuous with the first portion 21a of the first conductive member 21 of the third element 13E. The boundary between the fourth portion 21d of the first conductive member 21 of the first element 11E and the first portion 21a of the first conductive member 21 of the third element 13E may be clear or unclear.
図25に示すように、第7他端Td7は、第3素子13Eの第1導電部材21の第4部分21dと電気的に接続される。第8他端Td8は、第3素子13Eの第1磁性層11と電気的に接続される。この例では、この接続は、第3接続部材CN3により行われる。第9他端Td9は、第3素子13Eの第2磁性層12と電気的に接続される。この例では、この接続は、第4接続部材CN4により行われる。
As shown in FIG. 25, the seventh other end Td7 is electrically connected to the fourth portion 21d of the first conductive member 21 of the third element 13E. The eighth other end Td8 is electrically connected to the first magnetic layer 11 of the third element 13E. In this example, this connection is made by the third connecting member CN3. The ninth other end Td9 is electrically connected to the second magnetic layer 12 of the third element 13E. In this example, this connection is made by the fourth connecting member CN4.
第6配線77Fは、第8ゲートTg8と電気的に接続される。第6配線77Fは、例えば、書き込み用及び読み出し用のワード線W/R-WL3である。第7配線77Gは、第7ゲートTg7及び第9ゲートTg9と電気的に接続される。第7配線77Gは、例えば、書き込み用及び読み出し用のワード線W/R-WL4である。第8配線77Hは、第7端Ts7、第8端Ts8及び第9端Ts9と電気的に接続される。第8配線77Hは、例えば、ソース線SL2である。第3配線77Cは、例えば、ソース線SL1である。第9配線77Iは、第3素子13Eの第1導電部材21の第2部分21bと電気的に接続される。この例では、この接続は、導電部75gにより行われる。
The sixth wiring 77F is electrically connected to the eighth gate Tg8. The sixth wiring 77F is, for example, a word line W / R-WL3 for writing and reading. The seventh wiring 77G is electrically connected to the seventh gate Tg7 and the ninth gate Tg9. The seventh wiring 77G is, for example, a word line W / R-WL4 for writing and reading. The eighth wiring 77H is electrically connected to the seventh end Ts7, the eighth end Ts8, and the ninth end Ts9. The eighth wiring 77H is, for example, the source line SL2. The third wiring 77C is, for example, the source line SL1. The ninth wiring 77I is electrically connected to the second portion 21b of the first conductive member 21 of the third element 13E. In this example, this connection is made by the conductive portion 75g.
磁気デバイス141においては、第3素子13Eの第1導電部材21の第1部分21aの電位が、第3トランジスタTr3により制御される。第3トランジスタTr3が、第1素子11E及び第3素子13Eによりシェアされる。トランジスタの数が削減できる。高密度化が可能な磁気デバイスを提供できる。トランジスタがシェアされることで、例えば消費電力を低減できる。
In the magnetic device 141, the potential of the first portion 21a of the first conductive member 21 of the third element 13E is controlled by the third transistor Tr3. The third transistor Tr3 is shared by the first element 11E and the third element 13E. The number of transistors can be reduced. It is possible to provide a magnetic device capable of increasing the density. By sharing the transistor, for example, power consumption can be reduced.
図26に示すように、第5配線77F、第7配線77G及び第8配線77Hは、Y軸方向に沿って伸びる。この例では、第5トランジスタTr5及び第6トランジスタTr6のY軸方向における位置は、第2トランジスタTr2及び第4トランジスタTr4のY軸方向における位置と、第8トランジスタTr8及び第9トランジスタTr9のY軸方向における位置と、の間にある。この例では、X軸方向において、第3トランジスタTr3は、第1トランジスタTr1と第7トランジスタTr7との間にある。
As shown in FIG. 26, the fifth wiring 77F, the seventh wiring 77G, and the eighth wiring 77H extend along the Y-axis direction. In this example, the positions of the fifth transistor Tr5 and the sixth transistor Tr6 in the Y-axis direction are the positions of the second transistor Tr2 and the fourth transistor Tr4 in the Y-axis direction and the Y-axis of the eighth transistor Tr8 and the ninth transistor Tr9. It is between the position in the direction. In this example, in the X-axis direction, the third transistor Tr3 is between the first transistor Tr1 and the seventh transistor Tr7.
Z軸方向において、第8ゲートTg8は、第6配線77Fと重なる。第7ゲートTg7及び第9ゲートTg9は、第7配線77Gと重なる。第7端Ts7、第8端Ts8及び第9端Ts9は、第8配線77Hと重なる。
In the Z-axis direction, the 8th gate Tg8 overlaps with the 6th wiring 77F. The 7th gate Tg7 and the 9th gate Tg9 overlap with the 7th wiring 77G. The 7th end Ts7, the 8th end Ts8, and the 9th end Ts9 overlap with the 8th wiring 77H.
図27に示すように、第3素子13Eの第1積層体S1は、Z軸方向において、第6配線77Fと重なる。第3素子13Eの第2積層体S2は、Z軸方向において、第7配線77Gと重なる。
As shown in FIG. 27, the first laminated body S1 of the third element 13E overlaps with the sixth wiring 77F in the Z-axis direction. The second laminated body S2 of the third element 13E overlaps with the seventh wiring 77G in the Z-axis direction.
図28に示すように、第3接続部材CN3は、Z軸方向において、第3素子13Eの第1磁性層11、及び、第8他端Td8と重なる。第4接続部材CN4は、Z軸方向において、第3素子13Eの第2磁性層12、及び、第9他端Td9と重なる。
As shown in FIG. 28, the third connecting member CN3 overlaps the first magnetic layer 11 of the third element 13E and the eighth other end Td8 in the Z-axis direction. The fourth connecting member CN4 overlaps the second magnetic layer 12 of the third element 13E and the ninth other end Td9 in the Z-axis direction.
図29に示すように、第1配線77A(書き込み用及び読み出し用のビット線W/R-BL1)、第5配線77E(書き込み用及び読み出し用のビット線W/R-BL2)、及び、第9配線77I(書き込み用及び読み出し用のビット線W/R-BL3)は、X軸方向に沿って延びる。
As shown in FIG. 29, the first wiring 77A (bit wire W / R-BL1 for writing and reading), the fifth wiring 77E (bit wire W / R-BL2 for writing and reading), and the first wiring 77A. The 9 wiring 77I (bit wire W / R-BL3 for writing and reading) extends along the X-axis direction.
図25に示すように、磁気デバイス141は、他の素子(例えば、第4素子14E、第5素子15E及び第6素子16Eなど)をさらに含んで良い。第4素子14Eは、例えば、第3素子13Eと同様の構成を有しても良い。第5素子15Eは、例えば、第2素子12Eと同様の構成を有しても良い。第6素子16Eは、例えば、第3素子13Eと同様の構成を有しても良い。
As shown in FIG. 25, the magnetic device 141 may further include other elements (for example, the fourth element 14E, the fifth element 15E, the sixth element 16E, and the like). The fourth element 14E may have the same configuration as the third element 13E, for example. The fifth element 15E may have the same configuration as the second element 12E, for example. The sixth element 16E may have the same configuration as the third element 13E, for example.
第4素子14Eの第1導電部材21の第2部分21bは、導電部75hにより書き込み用及び読み出し用のワード線W/R-WL4と電気的に接続される。第4素子14Eの第1導電部材21の第4部分21dは、第10トランジスタTr10と電気的に接続される。
The second portion 21b of the first conductive member 21 of the fourth element 14E is electrically connected to the writing and reading word lines W / R-WL4 by the conductive portion 75h. The fourth portion 21d of the first conductive member 21 of the fourth element 14E is electrically connected to the tenth transistor Tr10.
第5素子15Eの第1導電部材21の第2部分21bは、導電部75iにより書き込み用及び読み出し用のワード線W/R-WL5と電気的に接続される。第5素子15Eの第1導電部材21の第1部分21aは、第11トランジスタTr11と電気的に接続される。第5素子15Eの第1導電部材21の第4部分21dは、第12トランジスタTr12と電気的に接続される。
The second portion 21b of the first conductive member 21 of the fifth element 15E is electrically connected to the word line W / R-WL5 for writing and reading by the conductive portion 75i. The first portion 21a of the first conductive member 21 of the fifth element 15E is electrically connected to the eleventh transistor Tr11. The fourth portion 21d of the first conductive member 21 of the fifth element 15E is electrically connected to the twelfth transistor Tr12.
第6素子16Eの第1導電部材21の第2部分21bは、導電部75jにより書き込み用及び読み出し用のワード線W/R-WL6と電気的に接続される。第6素子16Eの第1導電部材21の第4部分21dは、第13トランジスタTr13と電気的に接続される。
The second portion 21b of the first conductive member 21 of the sixth element 16E is electrically connected to the writing and reading word lines W / R-WL6 by the conductive portion 75j. The fourth portion 21d of the first conductive member 21 of the sixth element 16E is electrically connected to the thirteenth transistor Tr13.
第10トランジスタTr10、第11トランジスタTr11、第12トランジスタTr12及び第13トランジスタTr13は、例えば、n形である。
The tenth transistor Tr10, the eleventh transistor Tr11, the twelfth transistor Tr12, and the thirteenth transistor Tr13 are, for example, n-type.
第2配線77Bは、第1ゲートTg1、第2ゲートTg2、第5ゲートTg5、及び、第11トランジスタTr11のゲートと電気的に接続される。第3配線77Cは、第1端Ts1、第2端Ts2、第3端Ts3、第4端Ts4、第5端Ts5、第6端Ts6、第11トランジスタTr11の端(ソース)、及び、第12トランジスタTr12の端(ソース)と電気的に接続される。第4配線77Dは、第3ゲートTg3、第4ゲートTg4、第6ゲートTg6、及び、第12トランジスタTr12のゲートと電気的に接続される。第7配線77Gは、第7ゲートTg7、第9ゲートTg9、第10トランジスタTr10のゲート、第13トランジスタTr13のゲートと電気的に接続される。第8配線77Hは、第7端Ts7、第8端Ts8、第9端Ts9、第10トランジスタTr10の端(ソース)、及び、第13トランジスタTr13の端(ソース)と電気的に接続される。
The second wiring 77B is electrically connected to the gates of the first gate Tg1, the second gate Tg2, the fifth gate Tg5, and the eleventh transistor Tr11. The third wiring 77C includes a first end Ts1, a second end Ts2, a third end Ts3, a fourth end Ts4, a fifth end Ts5, a sixth end Ts6, an end (source) of the eleventh transistor Tr11, and a twelfth end. It is electrically connected to the end (source) of the transistor Tr12. The fourth wiring 77D is electrically connected to the gates of the third gate Tg3, the fourth gate Tg4, the sixth gate Tg6, and the twelfth transistor Tr12. The seventh wiring 77G is electrically connected to the seventh gate Tg7, the ninth gate Tg9, the gate of the tenth transistor Tr10, and the gate of the thirteenth transistor Tr13. The eighth wiring 77H is electrically connected to the seventh end Ts7, the eighth end Ts8, the ninth end Ts9, the end (source) of the tenth transistor Tr10, and the end (source) of the thirteenth transistor Tr13.
図29に示すように、第4素子14Eに対応して、書き込み用及び読み出し用のビット線W/R-BL4が設けられる。第5素子15Eに対応して、書き込み用及び読み出し用のビット線W/R-BL5が設けられる。第6素子16Eに対応して、書き込み用及び読み出し用のビット線W/R-BL6が設けられる。これらのビット線は、X軸方向に沿って延びる。
As shown in FIG. 29, a bit line W / R-BL4 for writing and reading is provided corresponding to the fourth element 14E. A bit line W / R-BL5 for writing and reading is provided corresponding to the fifth element 15E. A bit line W / R-BL6 for writing and reading is provided corresponding to the sixth element 16E. These bit lines extend along the X-axis direction.
図30は、第4実施形態に係る磁気デバイスを例示する模式的平面図である。
図30に示すように、実施形態に係る磁気デバイス142においては、第1~第6素子11E~16Eに加えて、第7素子17E及び第8素子18Eが設けられる。第7素子17Eに対応して、書き込み用及び読み出し用のビット線W/R-BL7が設けられる。第8素子18Eに対応して、書き込み用及び読み出し用のビット線W/R-BL8が設けられる。これらのビット線は、X軸方向に沿って延びる。磁気デバイスに設けられる素子の数は、任意である。 FIG. 30 is a schematic plan view illustrating the magnetic device according to the fourth embodiment.
As shown in FIG. 30, in themagnetic device 142 according to the embodiment, in addition to the first to sixth elements 11E to 16E, the seventh element 17E and the eighth element 18E are provided. A bit line W / R-BL7 for writing and reading is provided corresponding to the seventh element 17E. A bit line W / R-BL8 for writing and reading is provided corresponding to the eighth element 18E. These bit lines extend along the X-axis direction. The number of elements provided in the magnetic device is arbitrary.
図30に示すように、実施形態に係る磁気デバイス142においては、第1~第6素子11E~16Eに加えて、第7素子17E及び第8素子18Eが設けられる。第7素子17Eに対応して、書き込み用及び読み出し用のビット線W/R-BL7が設けられる。第8素子18Eに対応して、書き込み用及び読み出し用のビット線W/R-BL8が設けられる。これらのビット線は、X軸方向に沿って延びる。磁気デバイスに設けられる素子の数は、任意である。 FIG. 30 is a schematic plan view illustrating the magnetic device according to the fourth embodiment.
As shown in FIG. 30, in the
(第5実施形態)
図31は、第5実施形態に係る磁気デバイスを例示する模式的斜視図である。
図31に示すように、実施形態に係る磁気デバイス150は、第1素子11E、第2素子12E、第1~第7トランジスタTr1~Tr7、及び、第1~第8配線77A~77Hを含む。 (Fifth Embodiment)
FIG. 31 is a schematic perspective view illustrating the magnetic device according to the fifth embodiment.
As shown in FIG. 31, themagnetic device 150 according to the embodiment includes the first element 11E, the second element 12E, the first to seventh transistors Tr1 to Tr7, and the first to eighth wirings 77A to 77H.
図31は、第5実施形態に係る磁気デバイスを例示する模式的斜視図である。
図31に示すように、実施形態に係る磁気デバイス150は、第1素子11E、第2素子12E、第1~第7トランジスタTr1~Tr7、及び、第1~第8配線77A~77Hを含む。 (Fifth Embodiment)
FIG. 31 is a schematic perspective view illustrating the magnetic device according to the fifth embodiment.
As shown in FIG. 31, the
第1トランジスタTr1は、第1端Ts1、第1他端Td1及び第1ゲートTg1を含み、第1導電形(例えばn形)である。第2トランジスタTr2は、第2端Ts2、第2他端Td2及び第2ゲートTg2を含み、第2導電形(例えばp形)である。第3トランジスタTr3は、第3端Ts3、第3他端Td3及び第3ゲートTg3を含み、第1導電形である。第4トランジスタTr4は、第4端Ts4、第4他端Td4及び第4ゲートTg4を含み、第2導電形である。第5トランジスタTr5は、第5端Ts5、第5他端Td5及び第5ゲートTg5を含み、第1導電形である。第6トランジスタTr6は、第6端Ts6、第6他端Td6及び第6ゲートTg6を含み、第2導電形である。第7トランジスタTr7は、第7端Ts7、第7他端Td7及び第7ゲートTg7を含み、第2導電形である。
The first transistor Tr1 includes a first end Ts1, a first other end Td1, and a first gate Tg1, and is a first conductive type (for example, n type). The second transistor Tr2 includes a second end Ts2, a second other end Td2, and a second gate Tg2, and is a second conductive type (for example, p type). The third transistor Tr3 includes a third end Ts3, a third other end Td3, and a third gate Tg3, and is a first conductive type. The fourth transistor Tr4 includes a fourth end Ts4, a fourth other end Td4, and a fourth gate Tg4, and is a second conductive type. The fifth transistor Tr5 includes a fifth end Ts5, a fifth other end Td5, and a fifth gate Tg5, and is a first conductive type. The sixth transistor Tr6 includes a sixth end Ts6, a sixth other end Td6, and a sixth gate Tg6, and is a second conductive type. The seventh transistor Tr7 includes a seventh end Ts7, a seventh other end Td7, and a seventh gate Tg7, and is of the second conductive type.
第1素子11E及び第2素子12Eのそれぞれは、第1導電部材21、第1積層体S1及び第2積層体S2を含む。磁気デバイス150における、第1導電部材21、第1積層体S1及び第2積層体S2には、既に説明したこれらに関する構成が適用されて良い。
Each of the first element 11E and the second element 12E includes a first conductive member 21, a first laminated body S1, and a second laminated body S2. The configurations related to these described above may be applied to the first conductive member 21, the first laminated body S1 and the second laminated body S2 in the magnetic device 150.
第1素子11Eの第1導電部材21の第4部分21dは、第2素子12Eの第1導電部材21の第1部分21aと電気的に接続される。この例においても、第1素子11Eの第1導電部材21の第4部分21dは、第3素子13Eの第1導電部材21の第1部分21aと連続しても良い。第1素子11Eの第1導電部材21の第4部分21dと、第3素子13Eの第1導電部材21の第1部分21aと、の境界は、明確でも不明確でも良い。
The fourth portion 21d of the first conductive member 21 of the first element 11E is electrically connected to the first portion 21a of the first conductive member 21 of the second element 12E. Also in this example, the fourth portion 21d of the first conductive member 21 of the first element 11E may be continuous with the first portion 21a of the first conductive member 21 of the third element 13E. The boundary between the fourth portion 21d of the first conductive member 21 of the first element 11E and the first portion 21a of the first conductive member 21 of the third element 13E may be clear or unclear.
第1他端Td1は、第1素子11Eの第1導電部材21の第1部分21aと電気的に接続される。第2他端Td2は、第1素子11Eの第1磁性層11と電気的に接続される。第3他端Td3は、第1素子11Eの第1導電部材21の第4部分21d及び第2素子12Eの第1導電部材21の第1部分21aと電気的に接続される。第4他端Td4は、第1素子11Eの第2磁性層12と電気的に接続される。
The first other end Td1 is electrically connected to the first portion 21a of the first conductive member 21 of the first element 11E. The second other end Td2 is electrically connected to the first magnetic layer 11 of the first element 11E. The third other end Td3 is electrically connected to the fourth portion 21d of the first conductive member 21 of the first element 11E and the first portion 21a of the first conductive member 21 of the second element 12E. The fourth other end Td4 is electrically connected to the second magnetic layer 12 of the first element 11E.
第5他端Td5は、第2素子12Eの第1導電部材21の第4部分21dと電気的に接続される。第6他端Td6は、第2素子12Eの第1磁性層11と電気的に接続される。第7他端Td7は、第2素子12Eの第2磁性層12と電気的に接続される。
The fifth other end Td5 is electrically connected to the fourth portion 21d of the first conductive member 21 of the second element 12E. The sixth other end Td6 is electrically connected to the first magnetic layer 11 of the second element 12E. The seventh other end Td7 is electrically connected to the second magnetic layer 12 of the second element 12E.
第1配線77Aは、第1素子11Eの第1導電部材21の第2部分21bと電気的に接続される。第2配線77Bは、第1ゲートTg1及び第2ゲートTg2と電気的に接続される。第3配線77Cは、第1端Ts1、第2端Ts2、第3端Ts3及び第4端Ts4と電気的に接続される。第4配線77Dは、第3ゲートTg3及び第4ゲートTg4と電気的に接続される。第5配線77Eは、第2素子12Eの第1導電部材21の第2部分21bと電気的に接続される。
The first wiring 77A is electrically connected to the second portion 21b of the first conductive member 21 of the first element 11E. The second wiring 77B is electrically connected to the first gate Tg1 and the second gate Tg2. The third wiring 77C is electrically connected to the first end Ts1, the second end Ts2, the third end Ts3, and the fourth end Ts4. The fourth wiring 77D is electrically connected to the third gate Tg3 and the fourth gate Tg4. The fifth wiring 77E is electrically connected to the second portion 21b of the first conductive member 21 of the second element 12E.
第6配線77Fは、第6ゲートTg6と電気的に接続される。第7配線77Gは、第5ゲートTg5及び第7ゲートTg7と電気的に接続される。第8配線77Hは、第5端Ts5、第6端Ts6及び第7端Ts7と電気的に接続される。
The sixth wiring 77F is electrically connected to the sixth gate Tg6. The seventh wiring 77G is electrically connected to the fifth gate Tg5 and the seventh gate Tg7. The eighth wiring 77H is electrically connected to the fifth end Ts5, the sixth end Ts6, and the seventh end Ts7.
磁気デバイス150においては、第3素子13Eの第1導電部材21の第1部分21aの電位が、第3トランジスタTr3により制御される。第3トランジスタTr3が、第1素子11E及び第3素子13Eによりシェアされる。トランジスタの数が削減できる。高密度化が可能な磁気デバイスを提供できる。トランジスタがシェアされることで、例えば消費電力を低減できる。
In the magnetic device 150, the potential of the first portion 21a of the first conductive member 21 of the third element 13E is controlled by the third transistor Tr3. The third transistor Tr3 is shared by the first element 11E and the third element 13E. The number of transistors can be reduced. It is possible to provide a magnetic device capable of increasing the density. By sharing the transistor, for example, power consumption can be reduced.
磁気デバイス150に含まれる要素の各層の構成には、磁気デバイス141に関して説明した構成が適用されて良い。
The configuration described for the magnetic device 141 may be applied to the configuration of each layer of the elements included in the magnetic device 150.
(第6実施形態)
図32は、第6実施形態に係る磁気デバイスを例示する模式的斜視図である。
図33~図37は、第6実施形態に係る磁気デバイスを例示する模式的平面図である。
図33~図37は、磁気デバイスの各層の平面図に対応する。 (Sixth Embodiment)
FIG. 32 is a schematic perspective view illustrating the magnetic device according to the sixth embodiment.
33 to 37 are schematic plan views illustrating the magnetic device according to the sixth embodiment.
33 to 37 correspond to a plan view of each layer of the magnetic device.
図32は、第6実施形態に係る磁気デバイスを例示する模式的斜視図である。
図33~図37は、第6実施形態に係る磁気デバイスを例示する模式的平面図である。
図33~図37は、磁気デバイスの各層の平面図に対応する。 (Sixth Embodiment)
FIG. 32 is a schematic perspective view illustrating the magnetic device according to the sixth embodiment.
33 to 37 are schematic plan views illustrating the magnetic device according to the sixth embodiment.
33 to 37 correspond to a plan view of each layer of the magnetic device.
図32に示すように、実施形態に係る磁気デバイス160は、第1素子11E、第2素子12E、第3素子13E、第1トランジスタTr1、第2トランジスタTr2、第3トランジスタTr4、第1配線77A、第2配線77B、第3配線77C、第4配線77D、第5配線77E、及び、第6配線77Fを含む。
As shown in FIG. 32, in the magnetic device 160 according to the embodiment, the first element 11E, the second element 12E, the third element 13E, the first transistor Tr1, the second transistor Tr2, the third transistor Tr4, and the first wiring 77A , 2nd wiring 77B, 3rd wiring 77C, 4th wiring 77D, 5th wiring 77E, and 6th wiring 77F.
図32及び図33に示すように、第1トランジスタTr3は、第1端Ts1、第1他端Td1及び第1ゲートTg1を含み、第1導電形(例えばn形)である。第2トランジスタTr2は、第2端Ts2、第2他端Td3及び第2ゲートTg2を含み、第2導電形(例えばp形)である。第3トランジスタTr3は、第3端Ts3、第3他端Td3及び第3ゲートTg3を含み、第1導電形である。第4トランジスタTr4は、第4端Ts4、第4他端Td4及び第4ゲートTg4を含み、第2導電形である。
As shown in FIGS. 32 and 33, the first transistor Tr3 includes a first end Ts1, a first other end Td1 and a first gate Tg1, and is a first conductive type (for example, n type). The second transistor Tr2 includes a second end Ts2, a second other end Td3, and a second gate Tg2, and is a second conductive type (for example, p type). The third transistor Tr3 includes a third end Ts3, a third other end Td3, and a third gate Tg3, and is a first conductive type. The fourth transistor Tr4 includes a fourth end Ts4, a fourth other end Td4, and a fourth gate Tg4, and is a second conductive type.
第1端Ts1の少なくとも一部は、第3端Ts3の少なくとも一部と重なっても良い。第2端Ts2の少なくとも一部は、第4端Ts4の少なくとも一部と重なっても良い。第1端Ts1は、第3端Ts3と実質的に同じでも良い。第2端Ts2は、第4端Ts4と実質的に同じでも良い。
At least a part of the first end Ts1 may overlap with at least a part of the third end Ts3. At least a part of the second end Ts2 may overlap with at least a part of the fourth end Ts4. The first end Ts1 may be substantially the same as the third end Ts3. The second end Ts2 may be substantially the same as the fourth end Ts4.
第1素子11E、第2素子12E及び第3素子13Eのそれぞれは、第1導電部材21、第1積層体S1及び第2積層体S2を含む。磁気デバイス160における、第1導電部材21、第1積層体S1及び第2積層体S2には、既に説明したこれらに関する構成が適用されて良い。
Each of the first element 11E, the second element 12E, and the third element 13E includes the first conductive member 21, the first laminated body S1, and the second laminated body S2. The configurations related to these described above may be applied to the first conductive member 21, the first laminated body S1 and the second laminated body S2 in the magnetic device 160.
第1他端Td1は、第1素子11Eの第1導電部材21の第1部分21a、及び、第3素子13Eの第1導電部材21の第1部分21aと電気的に接続される。この例では、この接続は、例えば、導電部75a及び導電部75dにより行われる。
The first other end Td1 is electrically connected to the first portion 21a of the first conductive member 21 of the first element 11E and the first portion 21a of the first conductive member 21 of the third element 13E. In this example, this connection is made, for example, by the conductive portions 75a and the conductive portions 75d.
第2他端Td2は、第1素子11Eの第1磁性層11及び第2素子12Eの第1磁性層11と電気的に接続される。この例では、この接続は、第1接続部材CN1により行われる。
The second other end Td2 is electrically connected to the first magnetic layer 11 of the first element 11E and the first magnetic layer 11 of the second element 12E. In this example, this connection is made by the first connecting member CN1.
第3他端Td3は、第1素子11Eの第1導電部材21の第4部分21d、及び、第3素子13Eの第1導電部材21の第4部分21dと電気的に接続される。この例では、この接続は、導電部75c及び導電部75eにより行われる。
The third other end Td3 is electrically connected to the fourth portion 21d of the first conductive member 21 of the first element 11E and the fourth portion 21d of the first conductive member 21 of the third element 13E. In this example, this connection is made by the conductive section 75c and the conductive section 75e.
第4他端Td4は、第1素子11Eの第2磁性層12及び第2素子12Eの第2磁性層12と電気的に接続される。この例では、この接続は、第2接続部材CN2により行われる。
The fourth other end Td4 is electrically connected to the second magnetic layer 12 of the first element 11E and the second magnetic layer 12 of the second element 12E. In this example, this connection is made by the second connecting member CN2.
第1配線77Aは、第1素子11Eの第1導電部材21の第2部分21bと電気的に接続される。第2配線77Bは、第1ゲートTg1及び第2ゲートTg2と電気的に接続される。第3配線77Cは、第1端Ts1、第2端Ts2、第3端Ts3及び第4端Ts4と電気的に接続される。第4配線77Dは、第3ゲートTg3及び第4ゲートTg4と電気的に接続される。第1配線77Aは、例えば、書き込み用及び読み出し用のビット線W/R-BL1である。
The first wiring 77A is electrically connected to the second portion 21b of the first conductive member 21 of the first element 11E. The second wiring 77B is electrically connected to the first gate Tg1 and the second gate Tg2. The third wiring 77C is electrically connected to the first end Ts1, the second end Ts2, the third end Ts3, and the fourth end Ts4. The fourth wiring 77D is electrically connected to the third gate Tg3 and the fourth gate Tg4. The first wiring 77A is, for example, a bit line W / R-BL1 for writing and reading.
第5配線77Eは、第2素子12Eの第1導電部材21の第2部分21bと電気的に接続される。この例では、この接続は、導電部75hにより行われる。第5配線77Eは、例えば、書き込み用及び読み出し用のビット線W/R-BL2である。
The fifth wiring 77E is electrically connected to the second portion 21b of the first conductive member 21 of the second element 12E. In this example, this connection is made by the conductive section 75h. The fifth wiring 77E is, for example, a bit line W / R-BL2 for writing and reading.
第6配線77Fは、第3素子13Eの第1導電部材21の第2部分21bと電気的に接続される。この例では、この接続は、導電部75iにより行われる。第6配線77Fは、例えば、書き込み用及び読み出し用のビット線W/R-BL3である。
The sixth wiring 77F is electrically connected to the second portion 21b of the first conductive member 21 of the third element 13E. In this example, this connection is made by the conductive section 75i. The sixth wiring 77F is, for example, a bit line W / R-BL3 for writing and reading.
磁気デバイス160においては、第1トランジスタTr1は、第1素子11Eの第1導電部材21の第1部分21aの電位、及び、第3素子13Eの第1導電部材21の第1部分21aの電位を制御できる。第3トランジスタTr3は、第1素子11Eの第1導電部材21の第4部分21dの電位、及び、第3素子13Eの第1導電部材21の第4部分21dの電位を制御できる。第1トランジスタTr1及び第3トランジスタTr3は、第1素子11E及び第3素子13Eによりシェアされる。
In the magnetic device 160, the first transistor Tr1 sets the potential of the first portion 21a of the first conductive member 21 of the first element 11E and the potential of the first portion 21a of the first conductive member 21 of the third element 13E. Can be controlled. The third transistor Tr3 can control the potential of the fourth portion 21d of the first conductive member 21 of the first element 11E and the potential of the fourth portion 21d of the first conductive member 21 of the third element 13E. The first transistor Tr1 and the third transistor Tr3 are shared by the first element 11E and the third element 13E.
第2トランジスタTr2は、第1素子11Eの第1磁性層11の電位、及び、第2素子12Eの第1磁性層11の電位を制御できる。第4トランジスタTr4は、第1素子11Eの第2磁性層12の電位、及び、第2素子12Eの第2磁性層12の電位を制御できる。第2トランジスタTr2及び第4トランジスタTr4は、第1素子11E及び第2素子12Eによりシェアされる。トランジスタの数が削減できる。高密度化が可能な磁気デバイスを提供できる。トランジスタがシェアされることで、例えば消費電力を低減できる。
The second transistor Tr2 can control the potential of the first magnetic layer 11 of the first element 11E and the potential of the first magnetic layer 11 of the second element 12E. The fourth transistor Tr4 can control the potential of the second magnetic layer 12 of the first element 11E and the potential of the second magnetic layer 12 of the second element 12E. The second transistor Tr2 and the fourth transistor Tr4 are shared by the first element 11E and the second element 12E. The number of transistors can be reduced. It is possible to provide a magnetic device capable of increasing the density. By sharing the transistor, for example, power consumption can be reduced.
図34に示すように、導電部75a及び導電部75dは、互いに連続しても良い。導電部75c及び導電部75eは、互いに連続しても良い。
As shown in FIG. 34, the conductive portion 75a and the conductive portion 75d may be continuous with each other. The conductive portion 75c and the conductive portion 75e may be continuous with each other.
図33及び図35に示すように、第2素子12E用のトランジスタTnが設けられる。トランジスタTnは、第1導電形である。第3素子13E用のトランジスタTpが設けられる。トランジスタTpは、第2導電形である。
As shown in FIGS. 33 and 35, a transistor Tn for the second element 12E is provided. The transistor Tn is a first conductive type. A transistor Tp for the third element 13E is provided. The transistor Tp is a second conductive type.
図35に示すように、例えば、第1積層体S1のX軸方向の長さは、第1積層体S1のY軸方向の長さよりも長い。例えば、第2積層体S2のX軸方向の長さは、第2積層体S2のY軸方向の長さよりも長い。例えば、第1素子11E、第2素子11E及び第3素子13Eのそれぞれにおいて、第1対向磁性層11oの磁化11om、及び、第2対向磁性層12oの磁化12omは、定常状態で、Y軸方向に沿っている。
As shown in FIG. 35, for example, the length of the first laminated body S1 in the X-axis direction is longer than the length of the first laminated body S1 in the Y-axis direction. For example, the length of the second laminated body S2 in the X-axis direction is longer than the length of the second laminated body S2 in the Y-axis direction. For example, in each of the first element 11E, the second element 11E, and the third element 13E, the magnetization 11 om of the first opposing magnetic layer 11o and the magnetization 12 om of the second opposed magnetic layer 12o are in the Y-axis direction in a steady state. Along with.
図36に示すように、例えば、第1接続部材CN1のY軸方向の長さは、第1接続部材CN1のX軸方向の長さよりも長い。例えば、第2接続部材CN2のY軸方向の長さは、第2接続部材CN2のX軸方向の長さよりも長い。第3素子13E用の第3接続部材CN3及び第4接続部材CN4が設けられても良い。
As shown in FIG. 36, for example, the length of the first connecting member CN1 in the Y-axis direction is longer than the length of the first connecting member CN1 in the X-axis direction. For example, the length of the second connecting member CN2 in the Y-axis direction is longer than the length of the second connecting member CN2 in the X-axis direction. A third connecting member CN3 and a fourth connecting member CN4 for the third element 13E may be provided.
図37に示すように、第1配線77A(書き込み用及び読み出し用のビット線W/R-BL1)、第5配線77E(書き込み用及び読み出し用のビット線W/R-BL2)、及び、第6配線77F(書き込み用及び読み出し用のビット線W/R-BL3)は、X軸方向に沿って延びる。
As shown in FIG. 37, the first wiring 77A (bit wire W / R-BL1 for writing and reading), the fifth wiring 77E (bit wire W / R-BL2 for writing and reading), and the first wiring 77A. The 6 wiring 77F (bit wire W / R-BL3 for writing and reading) extends along the X-axis direction.
(第7実施形態)
図38、図39(a)及び図39(b)は、第7実施形態に係る磁気デバイスを例示する模式図である。
図38に示すように、実施形態に係る磁気デバイス170は、第1素子11E、第2素子12E、第1トランジスタTr1、第2トランジスタTr2、第1配線77A、第2配線77B、第3配線77C及び第4配線77Dを含む。第1トランジスタTr1は、第1端Ts1、第1他端Td1及び第1ゲートTg1を含む。第1トランジスタTr1は、第1導電形(例えば、p形)のトランジスタである。第2トランジスタTr2は、第2端Ts2、第2他端Td2及び第2ゲートTg2を含む。第2トランジスタTr2は、第2導電形(例えばp形)のトランジスタである。 (7th Embodiment)
38, 39 (a) and 39 (b) are schematic views illustrating the magnetic device according to the seventh embodiment.
As shown in FIG. 38, themagnetic device 170 according to the embodiment includes a first element 11E, a second element 12E, a first transistor Tr1, a second transistor Tr2, a first wiring 77A, a second wiring 77B, and a third wiring 77C. And the fourth wiring 77D. The first transistor Tr1 includes a first end Ts1, a first other end Td1, and a first gate Tg1. The first transistor Tr1 is a first conductive type (for example, p type) transistor. The second transistor Tr2 includes a second end Ts2, a second other end Td2, and a second gate Tg2. The second transistor Tr2 is a second conductive type (for example, p type) transistor.
図38、図39(a)及び図39(b)は、第7実施形態に係る磁気デバイスを例示する模式図である。
図38に示すように、実施形態に係る磁気デバイス170は、第1素子11E、第2素子12E、第1トランジスタTr1、第2トランジスタTr2、第1配線77A、第2配線77B、第3配線77C及び第4配線77Dを含む。第1トランジスタTr1は、第1端Ts1、第1他端Td1及び第1ゲートTg1を含む。第1トランジスタTr1は、第1導電形(例えば、p形)のトランジスタである。第2トランジスタTr2は、第2端Ts2、第2他端Td2及び第2ゲートTg2を含む。第2トランジスタTr2は、第2導電形(例えばp形)のトランジスタである。 (7th Embodiment)
38, 39 (a) and 39 (b) are schematic views illustrating the magnetic device according to the seventh embodiment.
As shown in FIG. 38, the
図39(a)及び図39(b)に示すように、第1素子11E及び第2素子12Eのそれぞれは、第1導電部材21、第1積層体S1及び第1ダイオードDE1を含む。第1導電部材21は、第1部分21aと、第2部分21bと、第3部分21cと、を含む。第1部分21aと第2部分21bとの間に第3部分21cがある。第1積層体S1は、第1磁性層11及び第1対向磁性層11oを含む。第1対向磁性層11oは、第3部分21cと第1磁性層11との間に設けられる。この例では、第1対向磁性層11oと第1磁性層11との間に第1非磁性層11nが設けられている。
As shown in FIGS. 39 (a) and 39 (b), each of the first element 11E and the second element 12E includes a first conductive member 21, a first laminated body S1, and a first diode DE1. The first conductive member 21 includes a first portion 21a, a second portion 21b, and a third portion 21c. There is a third portion 21c between the first portion 21a and the second portion 21b. The first laminated body S1 includes a first magnetic layer 11 and a first opposed magnetic layer 11o. The first opposed magnetic layer 11o is provided between the third portion 21c and the first magnetic layer 11. In this example, the first non-magnetic layer 11n is provided between the first opposed magnetic layer 11o and the first magnetic layer 11.
第1ダイオードDE1のアノードDA1及びカソードDC1の一方は、第1磁性層11と電気的に接続される。以下では、アノードDA1及びカソードDC1の一方をアノードDA1とする。アノードDA1は、例えば、第1積層体S1と積層される。アノードDA1は、例えば、第1積層体S1と接する。
One of the anode DA1 and the cathode DC1 of the first diode DE1 is electrically connected to the first magnetic layer 11. In the following, one of the anode DA1 and the cathode DC1 will be referred to as the anode DA1. The anode DA1 is laminated with, for example, the first laminated body S1. The anode DA1 is in contact with, for example, the first laminated body S1.
図38に示すように、第1他端Td1は、第1素子11Eの第1導電部材21の第1部分21aと電気的に接続される。第2他端Td2は、第2素子12Eの第1導電部材21の第1部分21aと電気的に接続される。
As shown in FIG. 38, the first other end Td1 is electrically connected to the first portion 21a of the first conductive member 21 of the first element 11E. The second other end Td2 is electrically connected to the first portion 21a of the first conductive member 21 of the second element 12E.
第1配線77Aは、第1素子11Eの第1導電部材21の第2部分21b、及び、第2素子12Eの第1導電部材21の第2部分21bと電気的に接続される。第2配線77Bは、第1ゲートTg1及び第2ゲートTg2と電気的に接続される。第3配線77Cは、第1端Ts1及び第2端Ts2と電気的に接続される。
The first wiring 77A is electrically connected to the second portion 21b of the first conductive member 21 of the first element 11E and the second portion 21b of the first conductive member 21 of the second element 12E. The second wiring 77B is electrically connected to the first gate Tg1 and the second gate Tg2. The third wiring 77C is electrically connected to the first end Ts1 and the second end Ts2.
図38に示すように、第4配線77Dは、第1素子11Eの第1ダイオードDE1のアノードDA1及びカソードDC1の他方、及び、第2素子12Eの第1ダイオードDE1のアノードDA1及びカソードDC1の他方と電気的に接続される。
As shown in FIG. 38, the fourth wiring 77D is the other of the anode DA1 and the cathode DC1 of the first diode DE1 of the first element 11E and the other of the anode DA1 and the cathode DC1 of the first diode DE1 of the second element 12E. Is electrically connected to.
第1配線77Aは、例えば、書き込み用のビット線WBL1である。第2配線77Bは、例えば、ワード線WLである。第3配線77Cは、例えば、ソース線SLである。第4配線77Dは、例えば、読み出し用のビット線RBL1である。
The first wiring 77A is, for example, a bit line WBL1 for writing. The second wiring 77B is, for example, a word line WL. The third wiring 77C is, for example, a source line SL. The fourth wiring 77D is, for example, a bit line RBL1 for reading.
以下では、アノードDA1及びカソードDC1の一方をアノードDA1とし、アノードDA1及びカソードDC1の他方をカソードDC1とする。
In the following, one of the anode DA1 and the cathode DC1 will be the anode DA1, and the other of the anode DA1 and the cathode DC1 will be the cathode DC1.
実施形態において、アノードDA1及びカソードDC1の一方がカソードDC1で、アノードDA1及びカソードDC1の他方がアノードDA1でも良い。アノードDA1及びカソードDC1の一方がカソードDC1で、アノードDA1及びカソードDC1の他方がアノードDA1である場合に読み出し用のビット線に印加される電圧の極性は、アノードDA1及びカソードDC1の一方がアノードDA1で、アノードDA1及びカソードDC1の他方がカソードDC1である場合に読み出し用のビット線に印加される電圧の極性と逆である。
In the embodiment, one of the anode DA1 and the cathode DC1 may be the cathode DC1, and the other of the anode DA1 and the cathode DC1 may be the anode DA1. When one of the anode DA1 and the cathode DC1 is the cathode DC1 and the other of the anode DA1 and the cathode DC1 is the anode DA1, the polarity of the voltage applied to the read bit line is such that one of the anode DA1 and the cathode DC1 is the anode DA1. This is opposite to the polarity of the voltage applied to the read bit line when the other of the anode DA1 and the cathode DC1 is the cathode DC1.
図40、図41(a)及び図41(b)は、第7実施形態に係る磁気デバイスを例示する模式図である。
図41(a)は、トランジスタを含むX-Y平面に対応する平面図である。図41(b)は、第1導電部材21を含むX-Y平面に対応する平面図である。 40, 41 (a) and 41 (b) are schematic views illustrating the magnetic device according to the seventh embodiment.
FIG. 41 (a) is a plan view corresponding to the XY plane including the transistor. FIG. 41 (b) is a plan view corresponding to the XY plane including the firstconductive member 21.
図41(a)は、トランジスタを含むX-Y平面に対応する平面図である。図41(b)は、第1導電部材21を含むX-Y平面に対応する平面図である。 40, 41 (a) and 41 (b) are schematic views illustrating the magnetic device according to the seventh embodiment.
FIG. 41 (a) is a plan view corresponding to the XY plane including the transistor. FIG. 41 (b) is a plan view corresponding to the XY plane including the first
図40に示すように、第1素子11Eの第1部分21aが、第1他端Td1と接続される。図41(a)及び図41(b)に示すように、第1素子11Eの第1導電部材21の少なくとも一部は、第2方向(例えば、Z軸方向)において、第1トランジスタTr1と重なる。第2方向は、第1部分21aから第2部分21bへの第1方向(X軸方向)と交差する。
As shown in FIG. 40, the first portion 21a of the first element 11E is connected to the first other end Td1. As shown in FIGS. 41 (a) and 41 (b), at least a part of the first conductive member 21 of the first element 11E overlaps with the first transistor Tr1 in the second direction (for example, the Z-axis direction). .. The second direction intersects the first direction (X-axis direction) from the first portion 21a to the second portion 21b.
図40に示すように、第2素子12Eの第1部分21aが、第2他端Td2と接続される。図41(a)及び図41(b)に示すように、第2素子12Eの第1導電部材21の少なくとも一部は、第2方向(例えば、Z軸方向)において、第2トランジスタTr2と重なる。
As shown in FIG. 40, the first portion 21a of the second element 12E is connected to the second other end Td2. As shown in FIGS. 41 (a) and 41 (b), at least a part of the first conductive member 21 of the second element 12E overlaps with the second transistor Tr2 in the second direction (for example, the Z-axis direction). ..
図42(a)~図42(d)は、第7実施形態に係る磁気デバイスを例示する模式図である。
これらの図は、磁気デバイス170における動作を例示している。 42 (a) to 42 (d) are schematic views illustrating the magnetic device according to the seventh embodiment.
These figures illustrate the operation in themagnetic device 170.
これらの図は、磁気デバイス170における動作を例示している。 42 (a) to 42 (d) are schematic views illustrating the magnetic device according to the seventh embodiment.
These figures illustrate the operation in the
図42(a)に示すように、第1素子11Eへの書き込み動作において、書き込み用のビット線WBL1は「ON」とされ、読み出し用のビット線RBL1は「OFF」とされ、ワード線WLは、「ON」とされる。書き込み電流wc1は、第1素子11Eの第1導電部材21及び第1トランジスタTr1を流れる。
As shown in FIG. 42A, in the writing operation to the first element 11E, the writing bit line WBL1 is set to “ON”, the reading bit line RBL1 is set to “OFF”, and the word line WL is set to “OFF”. , "ON". The write current wc1 flows through the first conductive member 21 of the first element 11E and the first transistor Tr1.
図42(b)に示すように、第2素子12Eへの書き込み動作において、書き込み用のビット線WBL1は「ON」とされ、読み出し用のビット線RBL1は「OFF」とされ、ワード線WLは、「OFF」とされる。書き込み電流wc2は、第2素子11Eの第1導電部材21及び第2トランジスタTr2を流れる。
As shown in FIG. 42B, in the writing operation to the second element 12E, the writing bit line WBL1 is set to “ON”, the reading bit line RBL1 is set to “OFF”, and the word line WL is set to “OFF”. , "OFF". The write current wc2 flows through the first conductive member 21 of the second element 11E and the second transistor Tr2.
図42(c)に示すように、第1素子11Eの読み出し動作において、書き込み用のビット線WBL1は「OFF」とされ、読み出し用のビット線RBL1は「ON」とされ、ワード線WLは、「ON」とされる。読み出し電流rc1は、第1トランジスタTr1、及び、第1素子11E(第1積層体S1及び第1ダイオードDE1)を流れる。
As shown in FIG. 42 (c), in the read operation of the first element 11E, the bit line WBL1 for writing is set to “OFF”, the bit line RBL1 for reading is set to “ON”, and the word line WL is set to “ON”. It is set to "ON". The read current rc1 flows through the first transistor Tr1 and the first element 11E (first laminated body S1 and first diode DE1).
図42(d)に示すように、第2素子12Eの読み出し動作において、書き込み用のビット線WBL1は「OFF」とされ、読み出し用のビット線RBL1は「ON」とされ、ワード線WLは、「OFF」とされる。読み出し電流rc2は、第2トランジスタTr2、及び、第2素子12E(第1積層体S1及び第1ダイオードDE1)を流れる。
As shown in FIG. 42 (d), in the read operation of the second element 12E, the bit line WBL1 for writing is set to “OFF”, the bit line RBL1 for reading is set to “ON”, and the word line WL is set to “ON”. It is set to "OFF". The read current rc2 flows through the second transistor Tr2 and the second element 12E (first laminated body S1 and first diode DE1).
図43、図44(a)及び図44(b)は、第7実施形態に係る磁気デバイスを例示する模式図である。
図43に示すように、実施形態に係る磁気デバイス171は、第1素子11E、第2素子12E、第1トランジスタTr1、第2トランジスタTr2、第1配線77A、第2配線77B、第3配線77C及び第4配線77Dに加えて、第3素子13E、第4素子14E、第3トランジスタTr3、第4トランジスタTr4、第5配線77E、第6配線77F及び第7配線77Gを含む。磁気デバイス171における、第1素子11E、第2素子12E、第1トランジスタTr1、第2トランジスタTr2、第1配線77A、第2配線77B、第3配線77C及び第4配線77Dの構成は、磁気デバイス170におけるそれと同様である。 43, 44 (a) and 44 (b) are schematic views illustrating the magnetic device according to the seventh embodiment.
As shown in FIG. 43, themagnetic device 171 according to the embodiment includes a first element 11E, a second element 12E, a first transistor Tr1, a second transistor Tr2, a first wiring 77A, a second wiring 77B, and a third wiring 77C. In addition to the fourth wiring 77D, the third element 13E, the fourth element 14E, the third transistor Tr3, the fourth transistor Tr4, the fifth wiring 77E, the sixth wiring 77F, and the seventh wiring 77G are included. The configuration of the first element 11E, the second element 12E, the first transistor Tr1, the second transistor Tr2, the first wiring 77A, the second wiring 77B, the third wiring 77C, and the fourth wiring 77D in the magnetic device 171 is a magnetic device. Similar to that in 170.
図43に示すように、実施形態に係る磁気デバイス171は、第1素子11E、第2素子12E、第1トランジスタTr1、第2トランジスタTr2、第1配線77A、第2配線77B、第3配線77C及び第4配線77Dに加えて、第3素子13E、第4素子14E、第3トランジスタTr3、第4トランジスタTr4、第5配線77E、第6配線77F及び第7配線77Gを含む。磁気デバイス171における、第1素子11E、第2素子12E、第1トランジスタTr1、第2トランジスタTr2、第1配線77A、第2配線77B、第3配線77C及び第4配線77Dの構成は、磁気デバイス170におけるそれと同様である。 43, 44 (a) and 44 (b) are schematic views illustrating the magnetic device according to the seventh embodiment.
As shown in FIG. 43, the
第3トランジスタTr3は、第3端Ts3、第3他端Td3及び第3ゲートTg3を含む。第3トランジスタTr3は、第1導電形(例えばn形)のトランジスタである。第4トランジスタTr4は、第4端Ts4、第4他端Td4及び第4ゲートTg4を含む。第4トランジスタTr4は、第2導電形(例えばp形)のトランジスタである。
The third transistor Tr3 includes a third end Ts3, a third other end Td3, and a third gate Tg3. The third transistor Tr3 is a first conductive type (for example, n type) transistor. The fourth transistor Tr4 includes a fourth end Ts4, a fourth other end Td4, and a fourth gate Tg4. The fourth transistor Tr4 is a second conductive type (for example, p type) transistor.
図44(a)及び図44(b)に示すように、第3素子13E及び第4素子14Eのそれぞれは、上記の、第1導電部材21、第1積層体S1及び第1ダイオードDE1を含む。
As shown in FIGS. 44 (a) and 44 (b), each of the third element 13E and the fourth element 14E includes the first conductive member 21, the first laminated body S1 and the first diode DE1 described above. ..
図43に示すように、第3他端Td3は、第3素子13Eの第1導電部材21の第1部分21aと電気的に接続される。第4他端Td4は、第4素子14Eの第1導電部材21の第1部分21aと電気的に接続される。
As shown in FIG. 43, the third other end Td3 is electrically connected to the first portion 21a of the first conductive member 21 of the third element 13E. The fourth other end Td4 is electrically connected to the first portion 21a of the first conductive member 21 of the fourth element 14E.
第5配線77Eは、第3素子13Eの第1導電部材21の第2部分21b、及び、第4素子14Eの第1導電部材21の第2部分21bと電気的に接続される。第6配線77Fは、第3ゲートTg3及び第4ゲートTg4と電気的に接続される。第3配線77Cは、第3端Ts3及び第4端Ts4とさらに電気的に接続される。第7配線77Gは、第3素子13Eの第1ダイオードDE1のアノードDA1及びカソードDC1の他方、及び、第4素子14Eの第1ダイオードDE1のアノードDA1及びカソードDC1の他方と電気的に接続される。例えば、アノードDA1及びカソードDC1の他方は、カソードDC1である。
The fifth wiring 77E is electrically connected to the second portion 21b of the first conductive member 21 of the third element 13E and the second portion 21b of the first conductive member 21 of the fourth element 14E. The sixth wiring 77F is electrically connected to the third gate Tg3 and the fourth gate Tg4. The third wiring 77C is further electrically connected to the third end Ts3 and the fourth end Ts4. The seventh wiring 77G is electrically connected to the other of the anode DA1 and the cathode DC1 of the first diode DE1 of the third element 13E and the other of the anode DA1 and the cathode DC1 of the first diode DE1 of the fourth element 14E. .. For example, the other of the anode DA1 and the cathode DC1 is the cathode DC1.
第2配線77Bは、例えば、ワード線WL1である。第5配線77Eは、例えば、書き込み用のビット線WBL2である。第6配線77Fは、例えば、ワード線WL2である。第7配線77Gは、例えば、読み出し用のビット線RBL2である。
The second wiring 77B is, for example, the word line WL1. The fifth wiring 77E is, for example, a bit line WBL2 for writing. The sixth wiring 77F is, for example, the word line WL2. The seventh wiring 77G is, for example, a bit line RBL2 for reading.
磁気デバイス171において、磁気デバイス170と同様の動作が実施可能である。
The magnetic device 171 can perform the same operation as the magnetic device 170.
図45(a)~図45(c)は、第7実施形態に係る磁気デバイスを例示する模式図である。
図45(a)は、トランジスタを含むX-Y平面に対応する平面図である。図45(b)は、第1導電部材21を含むX-Y平面に対応する平面図である。 45 (a) to 45 (c) are schematic views illustrating the magnetic device according to the seventh embodiment.
FIG. 45A is a plan view corresponding to the XY plane including the transistor. FIG. 45B is a plan view corresponding to the XY plane including the firstconductive member 21.
図45(a)は、トランジスタを含むX-Y平面に対応する平面図である。図45(b)は、第1導電部材21を含むX-Y平面に対応する平面図である。 45 (a) to 45 (c) are schematic views illustrating the magnetic device according to the seventh embodiment.
FIG. 45A is a plan view corresponding to the XY plane including the transistor. FIG. 45B is a plan view corresponding to the XY plane including the first
図45(a)及び図45(b)に示すように、第1素子11Eの第1導電部材21の少なくとも一部は、第2方向(例えば、Z軸方向)において、第1トランジスタTr1と重なる。第2方向は、第1部分21aから第2部分21bへの第1方向(X軸方向)と交差する。第2素子12Eの第1導電部材21の少なくとも一部は、第2方向(例えば、Z軸方向)において、第2トランジスタTr2と重なる。
As shown in FIGS. 45 (a) and 45 (b), at least a part of the first conductive member 21 of the first element 11E overlaps with the first transistor Tr1 in the second direction (for example, the Z-axis direction). .. The second direction intersects the first direction (X-axis direction) from the first portion 21a to the second portion 21b. At least a part of the first conductive member 21 of the second element 12E overlaps with the second transistor Tr2 in the second direction (for example, the Z-axis direction).
図45(a)及び図45(c)に示すように、第3素子13Eの第1導電部材21の少なくとも一部は、第2方向(例えば、Z軸方向)において、第3トランジスタTr3と重なる。第4素子14Eの第1導電部材21の少なくとも一部は、第2方向(例えば、Z軸方向)において、第4トランジスタTr4と重なる。
As shown in FIGS. 45 (a) and 45 (c), at least a part of the first conductive member 21 of the third element 13E overlaps with the third transistor Tr3 in the second direction (for example, the Z-axis direction). .. At least a part of the first conductive member 21 of the fourth element 14E overlaps with the fourth transistor Tr4 in the second direction (for example, the Z-axis direction).
図46は、第7実施形態に係る磁気デバイスを例示する模式図である。
図46に示すように、実施形態に係る磁気デバイス172も、第1素子11E、第2素子12E、第1トランジスタTr1、第2トランジスタTr2、第1配線77A、第2配線77B、第3配線77C及び第4配線77Dを含む。この例においても、第1トランジスタTr1は、第1導電形のトランジスタであり、第2トランジスタTr2は、第2導電形のトランジスタである。第1ダイオードDE1のアノードDA1及びカソードDC1の一方(例えば、アノードDA1)は、第1磁性層11と電気的に接続される(図39(a)及び図39(b)参照)。以下、磁気デバイス172の構成の例について、磁気デバイス170の構成と同様の部分の説明は、適宜省略する。 FIG. 46 is a schematic view illustrating the magnetic device according to the seventh embodiment.
As shown in FIG. 46, themagnetic device 172 according to the embodiment also includes the first element 11E, the second element 12E, the first transistor Tr1, the second transistor Tr2, the first wiring 77A, the second wiring 77B, and the third wiring 77C. And the fourth wiring 77D. Also in this example, the first transistor Tr1 is a first conductive type transistor, and the second transistor Tr2 is a second conductive type transistor. One of the anode DA1 and the cathode DC1 of the first diode DE1 (for example, the anode DA1) is electrically connected to the first magnetic layer 11 (see FIGS. 39 (a) and 39 (b)). Hereinafter, with respect to the example of the configuration of the magnetic device 172, the description of the same portion as the configuration of the magnetic device 170 will be omitted as appropriate.
図46に示すように、実施形態に係る磁気デバイス172も、第1素子11E、第2素子12E、第1トランジスタTr1、第2トランジスタTr2、第1配線77A、第2配線77B、第3配線77C及び第4配線77Dを含む。この例においても、第1トランジスタTr1は、第1導電形のトランジスタであり、第2トランジスタTr2は、第2導電形のトランジスタである。第1ダイオードDE1のアノードDA1及びカソードDC1の一方(例えば、アノードDA1)は、第1磁性層11と電気的に接続される(図39(a)及び図39(b)参照)。以下、磁気デバイス172の構成の例について、磁気デバイス170の構成と同様の部分の説明は、適宜省略する。 FIG. 46 is a schematic view illustrating the magnetic device according to the seventh embodiment.
As shown in FIG. 46, the
第1他端Td1は、第1素子11Eの第1導電部材21の第1部分21a、及び、第2素子12Eの第1ダイオードDE1のアノードDA1及びカソードDC1の他方(例えばカソードDC1)と電気的に接続される。第2他端Td2は、第1素子11Eの第1ダイオードDE1のアノードDA1及びカソードDC1の他方(例えばカソードDC1)、及び、第2素子12Eの第1導電部材21の第1部分21aと電気的に接続される。
The first other end Td1 is electrically connected to the first portion 21a of the first conductive member 21 of the first element 11E and the other of the anode DA1 and the cathode DC1 of the first diode DE1 of the second element 12E (for example, the cathode DC1). Connected to. The second other end Td2 is electrically connected to the anode DA1 of the first diode DE1 of the first element 11E and the other of the cathode DC1 (for example, the cathode DC1), and the first portion 21a of the first conductive member 21 of the second element 12E. Connected to.
第1配線77Aは、第1素子11Eの第1導電部材21の第2部分21bと電気的に接続される。第2配線77Bは、第1ゲートTg1及び第2ゲートTg2と電気的に接続される。第3配線77Cは、第1端Ts1及び第2端Ts2と電気的に接続される。第4配線77Dは、第2素子12Eの第1導電部材21の第2部分21bと電気的に接続される。
The first wiring 77A is electrically connected to the second portion 21b of the first conductive member 21 of the first element 11E. The second wiring 77B is electrically connected to the first gate Tg1 and the second gate Tg2. The third wiring 77C is electrically connected to the first end Ts1 and the second end Ts2. The fourth wiring 77D is electrically connected to the second portion 21b of the first conductive member 21 of the second element 12E.
第1配線77Aは、例えば、ビット線BL1である。第2配線77Bは、例えば、ワード線WLである。第3配線77Cは、例えば、ソース線SLである。第4配線77Dは、例えば、ビット線BL2である。
The first wiring 77A is, for example, the bit line BL1. The second wiring 77B is, for example, a word line WL. The third wiring 77C is, for example, a source line SL. The fourth wiring 77D is, for example, a bit line BL2.
磁気デバイス172においては、一方の素子の読み出し電流は、他方の素子の第1導電部材21を流れる。
In the magnetic device 172, the read current of one element flows through the first conductive member 21 of the other element.
(第8実施形態)
図47は、第8実施形態に係る磁気デバイスを例示する模式図である。
図47に示すように、実施形態に係る磁気デバイス180は、第1~第4素子11E~14E、第1~第4トランジスタTr1~Tr4、及び、第1~第11配線77A~77Kを含む。第1トランジスタTr1は、第1端Ts1、第1他端Td1及び第1ゲートTg1を含む。第2トランジスタTr2は、第2端Ts2、第2他端Td2及び第2ゲートTg2を含む。第3トランジスタTr3は、第3端Ts3、第3他端Td3及び第3ゲートTg1を含む。第4トランジスタTr4は、第4端Ts4、第4他端Td4及び第4ゲートTg4を含む。第8実施形態において、第2トランジスタTr2の導電形は、第1トランジスタTr1の導電形と同じでも、異なっても良い。第8実施形態において、第4トランジスタTr4の導電形は、第3トランジスタTr3の導電形と同じでも、異なっても良い。以下では、第1~第4トランジスタTr1~Tr4は、第1導電形(例えば、n形)のトランジスタである。 (8th Embodiment)
FIG. 47 is a schematic view illustrating the magnetic device according to the eighth embodiment.
As shown in FIG. 47, themagnetic device 180 according to the embodiment includes first to fourth elements 11E to 14E, first to fourth transistors Tr1 to Tr4, and first to eleventh wirings 77A to 77K. The first transistor Tr1 includes a first end Ts1, a first other end Td1, and a first gate Tg1. The second transistor Tr2 includes a second end Ts2, a second other end Td2, and a second gate Tg2. The third transistor Tr3 includes a third end Ts3, a third other end Td3, and a third gate Tg1. The fourth transistor Tr4 includes a fourth end Ts4, a fourth other end Td4, and a fourth gate Tg4. In the eighth embodiment, the conductive type of the second transistor Tr2 may be the same as or different from the conductive type of the first transistor Tr1. In the eighth embodiment, the conductive type of the fourth transistor Tr4 may be the same as or different from the conductive type of the third transistor Tr3. In the following, the first to fourth transistors Tr1 to Tr4 are first conductive type (for example, n type) transistors.
図47は、第8実施形態に係る磁気デバイスを例示する模式図である。
図47に示すように、実施形態に係る磁気デバイス180は、第1~第4素子11E~14E、第1~第4トランジスタTr1~Tr4、及び、第1~第11配線77A~77Kを含む。第1トランジスタTr1は、第1端Ts1、第1他端Td1及び第1ゲートTg1を含む。第2トランジスタTr2は、第2端Ts2、第2他端Td2及び第2ゲートTg2を含む。第3トランジスタTr3は、第3端Ts3、第3他端Td3及び第3ゲートTg1を含む。第4トランジスタTr4は、第4端Ts4、第4他端Td4及び第4ゲートTg4を含む。第8実施形態において、第2トランジスタTr2の導電形は、第1トランジスタTr1の導電形と同じでも、異なっても良い。第8実施形態において、第4トランジスタTr4の導電形は、第3トランジスタTr3の導電形と同じでも、異なっても良い。以下では、第1~第4トランジスタTr1~Tr4は、第1導電形(例えば、n形)のトランジスタである。 (8th Embodiment)
FIG. 47 is a schematic view illustrating the magnetic device according to the eighth embodiment.
As shown in FIG. 47, the
磁気デバイス180においても、第1素子11E、第2素子12E、第3素子13E及び第4素子14Eのそれぞれは、上記の、第1導電部材21、第1積層体S1及び第1ダイオードDE1を含む(図39(a)、図39(b)、図44(a)及び図44(b)参照)。第1ダイオードDE1のアノードDA1及びカソードDC1の一方(例えばアノードDA1)は、第1磁性層11と電気的に接続される。
Also in the magnetic device 180, each of the first element 11E, the second element 12E, the third element 13E and the fourth element 14E includes the first conductive member 21, the first laminated body S1 and the first diode DE1 described above. (See FIGS. 39 (a), 39 (b), 44 (a) and 44 (b)). One of the anode DA1 and the cathode DC1 of the first diode DE1 (for example, the anode DA1) is electrically connected to the first magnetic layer 11.
図47に示すように、第1他端Td1は、第1素子11Eの第1導電部材21の第1部分21aと電気的に接続される。第2他端Td2は、第2素子12Eの第1導電部材21の第1部分21aと電気的に接続される。第3他端Td3は、第3素子13Eの第1導電部材21の第1部分21aと電気的に接続される。第4他端Td4は、第4素子14Eの第1導電部材21の第1部分21aと電気的に接続される。
As shown in FIG. 47, the first other end Td1 is electrically connected to the first portion 21a of the first conductive member 21 of the first element 11E. The second other end Td2 is electrically connected to the first portion 21a of the first conductive member 21 of the second element 12E. The third other end Td3 is electrically connected to the first portion 21a of the first conductive member 21 of the third element 13E. The fourth other end Td4 is electrically connected to the first portion 21a of the first conductive member 21 of the fourth element 14E.
第1配線77Aは、第1素子11Eの第1導電部材21の第2部分21bと電気的に接続される。第2配線77Bは、第1ゲートTg1及び第2ゲートTg2と電気的に接続される。第3配線77Cは、第1端Ts1、第2端Ts2、第3端Ts3及び第4端Ts4と電気的に接続される。第4配線77Dは、第1素子11Eの第1ダイオードDE1のアノードDA1及びカソードDC1の他方(例えばカソードDC1)と電気的に接続される。
The first wiring 77A is electrically connected to the second portion 21b of the first conductive member 21 of the first element 11E. The second wiring 77B is electrically connected to the first gate Tg1 and the second gate Tg2. The third wiring 77C is electrically connected to the first end Ts1, the second end Ts2, the third end Ts3, and the fourth end Ts4. The fourth wiring 77D is electrically connected to the anode DA1 of the first diode DE1 of the first element 11E and the other of the cathode DC1 (for example, the cathode DC1).
第5配線77Eは、第2素子12Eの第1導電部材21の第2部分21bと電気的に接続される。第6配線77Fは、第3ゲートTg3及び第4ゲートTg4と電気的に接続される。第7配線77Gは、第2素子12Eの第1ダイオードDE1のアノードDA1及びカソードDC1の他方(例えばカソードDC1)と電気的に接続される。第8配線77Hは、第3素子13Eの第1導電部材21の第2部分21bと電気的に接続される。第9配線77Iは、第3素子13Eの第1ダイオードDE1のアノードDA1及びカソードDC1の他方(例えばカソードDC1)と電気的に接続される。第10配線77Jは、第4素子14Eの第1導電部材21の第2部分21bと電気的に接続される。第11配線77Kは、第4素子14Eの第1ダイオードDE1のアノードDA1及びカソードDC1の他方(例えばカソードDC1)と電気的に接続される。
The fifth wiring 77E is electrically connected to the second portion 21b of the first conductive member 21 of the second element 12E. The sixth wiring 77F is electrically connected to the third gate Tg3 and the fourth gate Tg4. The seventh wiring 77G is electrically connected to the anode DA1 of the first diode DE1 of the second element 12E and the other of the cathode DC1 (for example, the cathode DC1). The eighth wiring 77H is electrically connected to the second portion 21b of the first conductive member 21 of the third element 13E. The ninth wiring 77I is electrically connected to the anode DA1 of the first diode DE1 of the third element 13E and the other of the cathode DC1 (for example, the cathode DC1). The tenth wiring 77J is electrically connected to the second portion 21b of the first conductive member 21 of the fourth element 14E. The eleventh wiring 77K is electrically connected to the anode DA1 of the first diode DE1 of the fourth element 14E and the other of the cathode DC1 (for example, the cathode DC1).
第1配線77Aは、例えば、書き込み用のビット線WBL1である。第2配線77Bは、例えば、ワード線WL1である。第3配線77Cは、例えば、ソース線SLである。第4配線77Dは、例えば、読み出し用のビット線RBL1である。第5配線77Eは、例えば、書き込み用のビット線WBL2である。第6配線77Fは、例えば、ワード線WL2である。第7配線77Gは、例えば、書き込み用のビット線WBL2である。第8配線77Hは、例えば、書き込み用のビット線WBL3である。第9配線77Iは、例えば、読み出し用のビット線RBL3である。第10配線77Jは、例えば、書き込み用のビット線WBL4である。第11配線77Kは、例えば、読み出し用のビット線RBL4である。
The first wiring 77A is, for example, a bit line WBL1 for writing. The second wiring 77B is, for example, the word line WL1. The third wiring 77C is, for example, a source line SL. The fourth wiring 77D is, for example, a bit line RBL1 for reading. The fifth wiring 77E is, for example, a bit line WBL2 for writing. The sixth wiring 77F is, for example, the word line WL2. The seventh wiring 77G is, for example, a bit line WBL2 for writing. The eighth wiring 77H is, for example, a bit line WBL3 for writing. The ninth wiring 77I is, for example, a bit line RBL3 for reading. The tenth wiring 77J is, for example, a bit line WBL4 for writing. The eleventh wiring 77K is, for example, a bit line RBL4 for reading.
図48、図49(a)~図49(e)は、第8実施形態に係る磁気デバイスを例示する模式図である。
図49(a)は、トランジスタを含むX-Y平面に対応する平面図である。図49(b)は、第1素子11E及び第2素子12Eの第1導電部材21を含むX-Y平面に対応する平面図である。図49(c)は、第3素子13E及び第4素子14Eの第1導電部材21を含むX-Y平面に対応する平面図である。図49(d)は、第1素子11E及び第2素子12Eを含むZ-Y平面における断面図である。図49(e)は、第3素子13E及び第4素子14Eを含むZ-Y平面における断面図である。これらの断面図においては、絶縁部材は省略されている。 48 and 49 (a) to 49 (e) are schematic views illustrating the magnetic device according to the eighth embodiment.
FIG. 49A is a plan view corresponding to the XY plane including the transistor. FIG. 49B is a plan view corresponding to the XY plane including the firstconductive member 21 of the first element 11E and the second element 12E. FIG. 49 (c) is a plan view corresponding to the XY plane including the first conductive member 21 of the third element 13E and the fourth element 14E. FIG. 49 (d) is a cross-sectional view taken along the ZZ plane including the first element 11E and the second element 12E. FIG. 49 (e) is a cross-sectional view taken along the ZZ plane including the third element 13E and the fourth element 14E. In these cross-sectional views, the insulating member is omitted.
図49(a)は、トランジスタを含むX-Y平面に対応する平面図である。図49(b)は、第1素子11E及び第2素子12Eの第1導電部材21を含むX-Y平面に対応する平面図である。図49(c)は、第3素子13E及び第4素子14Eの第1導電部材21を含むX-Y平面に対応する平面図である。図49(d)は、第1素子11E及び第2素子12Eを含むZ-Y平面における断面図である。図49(e)は、第3素子13E及び第4素子14Eを含むZ-Y平面における断面図である。これらの断面図においては、絶縁部材は省略されている。 48 and 49 (a) to 49 (e) are schematic views illustrating the magnetic device according to the eighth embodiment.
FIG. 49A is a plan view corresponding to the XY plane including the transistor. FIG. 49B is a plan view corresponding to the XY plane including the first
図48に示すように、第1素子11Eの第1部分21aが、第1他端Td1と接続される。第2素子12Eの第1部分21aが、第2他端Td2と接続される。第3素子13Eの第1部分21aが、第3他端Td3と接続される。第4素子14Eの第1部分21aが、第4他端Td4と接続される。
As shown in FIG. 48, the first portion 21a of the first element 11E is connected to the first other end Td1. The first portion 21a of the second element 12E is connected to the second other end Td2. The first portion 21a of the third element 13E is connected to the third other end Td3. The first portion 21a of the fourth element 14E is connected to the fourth other end Td4.
図49(a)、図49(b)及び図49(d)に示すように、第1素子11Eの第1導電部材21の少なくとも一部(例えば第1部分21a)は、第2方向(例えば、Z軸方向)において、第1トランジスタTr1と重なる。第2方向は、第1部分21aから第2部分21bへの第1方向(X軸方向)と交差する。第2素子12Eの第1導電部材21の少なくとも一部(例えば第1部分21a)は、第2方向(例えば、Z軸方向)において、第2トランジスタTr2と重なる。
As shown in FIGS. 49 (a), 49 (b) and 49 (d), at least a part (for example, the first part 21a) of the first conductive member 21 of the first element 11E is in the second direction (for example, the first part 21a). , Z-axis direction), it overlaps with the first transistor Tr1. The second direction intersects the first direction (X-axis direction) from the first portion 21a to the second portion 21b. At least a part (for example, the first part 21a) of the first conductive member 21 of the second element 12E overlaps with the second transistor Tr2 in the second direction (for example, the Z-axis direction).
図49(a)、図49(c)及び図49(e)に示すように、第3素子13Eの第1導電部材21の少なくとも一部(例えば第1部分21a)は、第2方向(例えば、Z軸方向)において、第3トランジスタTr3と重なる。第4素子14Eの第1導電部材21の少なくとも一部(例えば第1部分21a)は、第2方向(例えば、Z軸方向)において、第4トランジスタTr4と重なる。
As shown in FIGS. 49 (a), 49 (c) and 49 (e), at least a part (for example, the first part 21a) of the first conductive member 21 of the third element 13E is in the second direction (for example, the first part 21a). , Z-axis direction), it overlaps with the third transistor Tr3. At least a part (for example, the first part 21a) of the first conductive member 21 of the fourth element 14E overlaps with the fourth transistor Tr4 in the second direction (for example, the Z-axis direction).
第1トランジスタTr1から第3トランジスタTr3への方向は、第1方向(例えば、X軸方向)に沿う。第2トランジスタTr2から第4トランジスタTr4への方向は、第1方向に沿う。第2トランジスタTr2から第1トランジスタTr1への方向は、第3方向の成分を含む。第3方向は、第1方向及び第2方向を含む平面と交差する。第3方向は、例えば、Y軸方向である。第4トランジスタTr4から第3トランジスタTr3への方向は、第3方向の成分を含む。
The direction from the first transistor Tr1 to the third transistor Tr3 is along the first direction (for example, the X-axis direction). The direction from the second transistor Tr2 to the fourth transistor Tr4 is along the first direction. The direction from the second transistor Tr2 to the first transistor Tr1 includes a component in the third direction. The third direction intersects the plane containing the first and second directions. The third direction is, for example, the Y-axis direction. The direction from the fourth transistor Tr4 to the third transistor Tr3 includes a component of the third direction.
図49(d)及び図49(e)に示すように、第1素子11Eの第2方向(Z軸方向)における位置は、第1トランジスタTr1の第2方向における位置と、第3素子13Eの第2方向における位置と、の間にある。第1素子11Eの第2方向における位置は、第1トランジスタTr1の第2方向における位置と、第4素子14Eの第2方向における位置と、の間にある。第2素子12Eの第2方向における位置は、第2トランジスタTr2の第2方向における位置と、第3素子13Eの第2方向における位置と、の間にある。第2素子12Eの第2方向における位置は、第2トランジスタTr2の第2方向における位置と、第4素子14Eの第2方向における位置と、の間にある。第2方向における位置は、例えば、高さ方向の位置に対応する。
As shown in FIGS. 49 (d) and 49 (e), the positions of the first element 11E in the second direction (Z-axis direction) are the position of the first transistor Tr1 in the second direction and the position of the third element 13E. It is between the position in the second direction. The position of the first element 11E in the second direction is between the position of the first transistor Tr1 in the second direction and the position of the fourth element 14E in the second direction. The position of the second element 12E in the second direction is between the position of the second transistor Tr2 in the second direction and the position of the third element 13E in the second direction. The position of the second element 12E in the second direction is between the position of the second transistor Tr2 in the second direction and the position of the fourth element 14E in the second direction. The position in the second direction corresponds to, for example, the position in the height direction.
図50、図51(a)~図51(e)は、第8実施形態に係る磁気デバイスを例示する模式図である。
図50は、実施形態に係る磁気デバイス181を例示する模式図である。磁気デバイス181における素子の配置は、磁気デバイス180における素子の配置とは異なる。磁気デバイス181における他の構成は、磁気デバイス180における構成と、同様である。以下、磁気デバイス181における素子の配置の例について説明する。 50 and 51 (a) to 51 (e) are schematic views illustrating the magnetic device according to the eighth embodiment.
FIG. 50 is a schematic view illustrating themagnetic device 181 according to the embodiment. The arrangement of the elements in the magnetic device 181 is different from the arrangement of the elements in the magnetic device 180. Other configurations in the magnetic device 181 are similar to those in the magnetic device 180. Hereinafter, an example of arranging the elements in the magnetic device 181 will be described.
図50は、実施形態に係る磁気デバイス181を例示する模式図である。磁気デバイス181における素子の配置は、磁気デバイス180における素子の配置とは異なる。磁気デバイス181における他の構成は、磁気デバイス180における構成と、同様である。以下、磁気デバイス181における素子の配置の例について説明する。 50 and 51 (a) to 51 (e) are schematic views illustrating the magnetic device according to the eighth embodiment.
FIG. 50 is a schematic view illustrating the
図51(a)は、トランジスタを含むX-Y平面に対応する平面図である。図51(b)は、第1素子11E及び第2素子12Eの第1導電部材21を含むX-Y平面に対応する平面図である。図51(c)は、第3素子13E及び第4素子14Eの第1導電部材21を含むX-Y平面に対応する平面図である。図51(d)は、第1素子11E及び第3素子13Eを含むZ-Y平面における断面図である。図51(e)は、第2素子12E及び第4素子14Eを含むZ-Y平面における断面図である。これらの断面図においては、絶縁部材は省略されている。
FIG. 51 (a) is a plan view corresponding to the XY plane including the transistor. FIG. 51 (b) is a plan view corresponding to the XY plane including the first conductive member 21 of the first element 11E and the second element 12E. FIG. 51 (c) is a plan view corresponding to the XY plane including the first conductive member 21 of the third element 13E and the fourth element 14E. FIG. 51 (d) is a cross-sectional view taken along the ZZ plane including the first element 11E and the third element 13E. FIG. 51 (e) is a cross-sectional view taken along the ZZ plane including the second element 12E and the fourth element 14E. In these cross-sectional views, the insulating member is omitted.
図51(a)、図51(b)及び図51(d)に示すように、第1素子11Eの第1導電部材21の少なくとも一部(例えば第1部分21a)は、第2方向(例えば、Z軸方向)において、第1トランジスタTr1と重なる。図51(e)に示すように、第2素子12Eの第1導電部材21の少なくとも一部(例えば第1部分21a)は、第2方向において、第2トランジスタTr2と重なる。
As shown in FIGS. 51 (a), 51 (b) and 51 (d), at least a part (for example, the first part 21a) of the first conductive member 21 of the first element 11E is in the second direction (for example, the first part 21a). , Z-axis direction), it overlaps with the first transistor Tr1. As shown in FIG. 51 (e), at least a part (for example, the first part 21a) of the first conductive member 21 of the second element 12E overlaps with the second transistor Tr2 in the second direction.
図51(a)、図51(c)及び図51(d)に示すように、第3素子13Eの第1導電部材21の少なくとも一部(例えば第1部分21a)は、第2方向において、第3トランジスタTr3と重なる。図51(e)に示すように、第4素子14Eの第1導電部材21の少なくとも一部(例えば第1部分21a)は、第2方向において、第4トランジスタTr4と重なる。
As shown in FIGS. 51 (a), 51 (c) and 51 (d), at least a part (for example, the first part 21a) of the first conductive member 21 of the third element 13E is in the second direction. It overlaps with the third transistor Tr3. As shown in FIG. 51 (e), at least a part (for example, the first part 21a) of the first conductive member 21 of the fourth element 14E overlaps with the fourth transistor Tr4 in the second direction.
第1トランジスタTr1から第4トランジスタTr4への方向は、第1方向(X軸方向)に沿う。第3トランジスタTr3から第2トランジスタTr2への方向は、第1方向に沿う。第3トランジスタTr3から第1トランジスタTr1への方向は、第3方向の成分を含む。第3方向は、第1方向及び第2方向を含む平面と交差する。第3方向は、例えば、Y軸方向である。第2トランジスタTr2から第4トランジスタTr4への方向は、第3方向の成分を含む。
The direction from the first transistor Tr1 to the fourth transistor Tr4 is along the first direction (X-axis direction). The direction from the third transistor Tr3 to the second transistor Tr2 is along the first direction. The direction from the third transistor Tr3 to the first transistor Tr1 includes a component of the third direction. The third direction intersects the plane containing the first and second directions. The third direction is, for example, the Y-axis direction. The direction from the second transistor Tr2 to the fourth transistor Tr4 includes a component in the third direction.
図51(d)に示すように、第1素子11Eの第2方向(例えばZ軸方向)における位置は、第1トランジスタTr1の第2方向における位置と、第3素子13Eの第2方向における位置と、の間にある。図51(e)に示すように、第2素子12Eの第2方向における位置は、第2トランジスタTr2の第2方向における位置と、第4素子14Eの第2方向における位置と、の間にある。
As shown in FIG. 51 (d), the positions of the first element 11E in the second direction (for example, the Z-axis direction) are the position of the first transistor Tr1 in the second direction and the position of the third element 13E in the second direction. And between. As shown in FIG. 51 (e), the position of the second element 12E in the second direction is between the position of the second transistor Tr2 in the second direction and the position of the fourth element 14E in the second direction. ..
磁気デバイス181においては、磁気デバイス180に比べて、例えば、複数の素子の密度の間の干渉を抑制することが容易である。例えば、複数の素子の密度を高めることが容易である。
In the magnetic device 181, for example, it is easier to suppress interference between the densities of a plurality of elements as compared with the magnetic device 180. For example, it is easy to increase the density of a plurality of elements.
図52(a)及び図52(b)は、実施形態に係る磁気デバイスの一部を例示する模式図的断面である。
図52(a)に示すように、磁気デバイス185において、第1ダイオードDE1は、例えば、金属シリサイド層DsLを含む。金属シリサイド層DsLは、例えば、Ni、Al、Au、Pt、Er、Co、Pd、Ti及びBよりなる群から選択された少なくとも1つと、シリコンと、を含む。第1ダイオードDE1がこのような構成を有することで、例えば、高い耐熱性が得られる。第1ダイオードDE1は例えば、ショットキーダイオードに対応する。 52 (a) and 52 (b) are schematic cross-sectional views illustrating a part of the magnetic device according to the embodiment.
As shown in FIG. 52 (a), in themagnetic device 185, the first diode DE1 includes, for example, a metal silicide layer DsL. The metal silicide layer DsL contains, for example, at least one selected from the group consisting of Ni, Al, Au, Pt, Er, Co, Pd, Ti and B, and silicon. When the first diode DE1 has such a configuration, for example, high heat resistance can be obtained. The first diode DE1 corresponds to, for example, a Schottky diode.
図52(a)に示すように、磁気デバイス185において、第1ダイオードDE1は、例えば、金属シリサイド層DsLを含む。金属シリサイド層DsLは、例えば、Ni、Al、Au、Pt、Er、Co、Pd、Ti及びBよりなる群から選択された少なくとも1つと、シリコンと、を含む。第1ダイオードDE1がこのような構成を有することで、例えば、高い耐熱性が得られる。第1ダイオードDE1は例えば、ショットキーダイオードに対応する。 52 (a) and 52 (b) are schematic cross-sectional views illustrating a part of the magnetic device according to the embodiment.
As shown in FIG. 52 (a), in the
実施形態において、第1ダイオードDE1のX-Y平面における形状は、第1積層体S1のX-Y平面における形状と実質的に同じでよい。金属シリサイドは、大きな応力を有し易い。金属シリサイドの形成時に、金属シリサイドの元なる材料の構造から、構造が変化する。これにより、大きな応力が発生する。これにより、例えば、第1ダイオードDE1の金属シリサイド層DsLの応力が第1積層体S1に加わる。第1積層体S1に含まれる磁性層の磁化を、応力に起因する異方性により制御し易くなる。例えば、面内磁化配置が適用された第1積層体S1において、安定した磁化が得易い。これにより、第1積層体S1が微細化された場合においても、安定した動作が得られる。例えば、大容量の磁気デバイスが得易くなる。Ni、Co、Pt及びPdの融点は、第1積層体S1の形成の際のプロセス温度に比較的近い。金属シリサイド層DsLがこれらの材料を含むことで、高い歩留まりが得易い。
In the embodiment, the shape of the first diode DE1 in the XY plane may be substantially the same as the shape of the first laminated body S1 in the XY plane. Metal silicide tends to have a large stress. When the metal silicide is formed, the structure changes from the structure of the material from which the metal silicide is based. This causes a large stress. As a result, for example, the stress of the metal silicide layer DsL of the first diode DE1 is applied to the first laminated body S1. The magnetization of the magnetic layer contained in the first laminated body S1 can be easily controlled by anisotropy caused by stress. For example, in the first laminated body S1 to which the in-plane magnetization arrangement is applied, stable magnetization can be easily obtained. As a result, stable operation can be obtained even when the first laminated body S1 is miniaturized. For example, it becomes easy to obtain a large-capacity magnetic device. The melting points of Ni, Co, Pt and Pd are relatively close to the process temperature at the time of forming the first laminated body S1. Since the metal silicide layer DsL contains these materials, a high yield can be easily obtained.
図52(b)に示すように、磁気デバイス186において、第1ダイオードDE1の金属シリサイド層DsLは、複数の金属層DsL1と、複数のシリコン層DsL2と、を含んでも良い。複数の金属層DsL1の1つは、複数のシリコン層DsL2の1つと、複数のシリコン層DsL2の別の1つと、の間にある。複数のシリコン層DsL2の1つは、複数の金属層DsL1の1つと、複数の金属層DsL1の別の1つと、の間にある。複数の金属層DsL1、及び、複数のシリコン層DsL2と、により、シリサイドが形成される。例えば、安定した整流特性が得易い。このように、第1ダイオードDE1は金属シリサイドを含んでも良い。安定した特性が得易くなり、高密度化が可能な磁気デバイスが提供できる。
As shown in FIG. 52B, in the magnetic device 186, the metal silicide layer DsL of the first diode DE1 may include a plurality of metal layers DsL1 and a plurality of silicon layers DsL2. One of the plurality of metal layers DsL1 is between one of the plurality of silicon layers DsL2 and another one of the plurality of silicon layers DsL2. One of the plurality of silicon layers DsL2 is between one of the plurality of metal layers DsL1 and another one of the plurality of metal layers DsL1. Silicide is formed by the plurality of metal layers DsL1 and the plurality of silicon layers DsL2. For example, stable rectification characteristics can be easily obtained. As described above, the first diode DE1 may contain the metal silicide. It becomes easy to obtain stable characteristics, and it is possible to provide a magnetic device capable of increasing the density.
磁気デバイス185及び186の構成は、第7実施形態及び第8実施形態に係る任意の磁気デバイスに適用できる。
The configurations of the magnetic devices 185 and 186 can be applied to any magnetic device according to the seventh and eighth embodiments.
図53は、実施形態に係る磁気デバイスを例示する模式図である。
図53に示すように、実施形態に係る磁気デバイス187aは、第1素子11E、第2素子12E、第1トランジスタTr1、第2トランジスタTr2、及び、第1~第6配線77A~77Fを含む。第1トランジスタTr1は、第1端Ts1、第1他端Td1及び第1ゲートTg1を含む。第2トランジスタTr2は、第2端Ts2、第2他端Td2及び第2ゲートTg2を含む。第2トランジスタTr2の導電形は、第1トランジスタTr1の導電形と同じでも、異なっても良い。 FIG. 53 is a schematic view illustrating the magnetic device according to the embodiment.
As shown in FIG. 53, themagnetic device 187a according to the embodiment includes a first element 11E, a second element 12E, a first transistor Tr1, a second transistor Tr2, and first to sixth wirings 77A to 77F. The first transistor Tr1 includes a first end Ts1, a first other end Td1, and a first gate Tg1. The second transistor Tr2 includes a second end Ts2, a second other end Td2, and a second gate Tg2. The conductive type of the second transistor Tr2 may be the same as or different from the conductive type of the first transistor Tr1.
図53に示すように、実施形態に係る磁気デバイス187aは、第1素子11E、第2素子12E、第1トランジスタTr1、第2トランジスタTr2、及び、第1~第6配線77A~77Fを含む。第1トランジスタTr1は、第1端Ts1、第1他端Td1及び第1ゲートTg1を含む。第2トランジスタTr2は、第2端Ts2、第2他端Td2及び第2ゲートTg2を含む。第2トランジスタTr2の導電形は、第1トランジスタTr1の導電形と同じでも、異なっても良い。 FIG. 53 is a schematic view illustrating the magnetic device according to the embodiment.
As shown in FIG. 53, the
磁気デバイス187aにおいても、第1素子11E及び第2素子12Eのそれぞれは、上記の、第1導電部材21、第1積層体S1及び第1ダイオードDE1を含む(図39(a)及び図39(b)参照)。第1ダイオードDE1のアノードDA1及びカソードDC1の一方(例えばアノードDA1)は、第1磁性層11と電気的に接続される。
Also in the magnetic device 187a, each of the first element 11E and the second element 12E includes the first conductive member 21, the first laminated body S1 and the first diode DE1 described above (FIGS. 39 (a) and 39 (FIG. 39) and FIG. 39 (FIG. 39). b) See). One of the anode DA1 and the cathode DC1 of the first diode DE1 (for example, the anode DA1) is electrically connected to the first magnetic layer 11.
図53に示すように、第1他端Td1は、第1素子11Eの第1導電部材21の第1部分21aと電気的に接続される。第2他端Td2は、第2素子12Eの第1導電部材21の第1部分21aと電気的に接続される。
As shown in FIG. 53, the first other end Td1 is electrically connected to the first portion 21a of the first conductive member 21 of the first element 11E. The second other end Td2 is electrically connected to the first portion 21a of the first conductive member 21 of the second element 12E.
第1配線77Aは、第1素子11Eの第1導電部材21の第2部分21bと電気的に接続される。第2配線77Bは、第1ゲートTg1及び第2ゲートTg2と電気的に接続される。第3配線77Cは、第1端Ts1及び第2端Ts2と電気的に接続される。第4配線77Dは、第1素子11Eの第1ダイオードDE1のアノードDA1及びカソードDC1の他方(例えばカソードDC1)と電気的に接続される。第5配線77Eは、第2素子12Eの第1導電部材21の第2部分21bと電気的に接続される。第6配線77Fは、第2素子12Eの第1ダイオードDE1のアノードDA1及びカソードDC1の他方(例えばカソードDC1)と電気的に接続される。
The first wiring 77A is electrically connected to the second portion 21b of the first conductive member 21 of the first element 11E. The second wiring 77B is electrically connected to the first gate Tg1 and the second gate Tg2. The third wiring 77C is electrically connected to the first end Ts1 and the second end Ts2. The fourth wiring 77D is electrically connected to the anode DA1 of the first diode DE1 of the first element 11E and the other of the cathode DC1 (for example, the cathode DC1). The fifth wiring 77E is electrically connected to the second portion 21b of the first conductive member 21 of the second element 12E. The sixth wiring 77F is electrically connected to the anode DA1 of the first diode DE1 of the second element 12E and the other of the cathode DC1 (for example, the cathode DC1).
磁気デバイス187aにおいて、例えば、第1配線77A、第3配線77C、第4配線77D、第5配線77E及び第6配線77Fの延びる方向は、第1延在方向Dx1(例えば、Y軸方向及びX軸方向の一方)に沿って延びる。例えば、第2配線77Bは、第1延在方向Dx1と交差する第2延在方向Dx2(例えば、Y軸方向及びX軸方向の他方)に沿って延びる。第1延在方向Dx1及び第2延在方向Dx2を含む平面は、Z軸方向と交差する。第1延在方向Dx1及び第2延在方向Dx2を含む平面は、例えば、Z軸方向に対して垂直である。
In the magnetic device 187a, for example, the extending directions of the first wiring 77A, the third wiring 77C, the fourth wiring 77D, the fifth wiring 77E, and the sixth wiring 77F are the first extending directions Dx1 (for example, the Y-axis direction and X). Extends along one of the axial directions). For example, the second wiring 77B extends along a second extending direction Dx2 (eg, the other in the Y-axis direction and the X-axis direction) that intersects the first extending direction Dx1. The plane including the first extending direction Dx1 and the second extending direction Dx2 intersects the Z-axis direction. The plane including the first extending direction Dx1 and the second extending direction Dx2 is, for example, perpendicular to the Z-axis direction.
磁気デバイス187aにおいて、第1配線77Aは、例えば、書き込み用のビット線WBL1である。第2配線77Bは、例えば、ワード線WLである。第3配線77Cは、例えば、ソース線SLである。第4配線77Dは、例えば、読み出し用のビット線RBL1である。第5配線77Eは、例えば、書き込み用のビット線WBL2である。第6配線77Fは、例えば、読み出し用のビット線RBL2である。
In the magnetic device 187a, the first wiring 77A is, for example, a bit line WBL1 for writing. The second wiring 77B is, for example, a word line WL. The third wiring 77C is, for example, a source line SL. The fourth wiring 77D is, for example, a bit line RBL1 for reading. The fifth wiring 77E is, for example, a bit line WBL2 for writing. The sixth wiring 77F is, for example, a bit line RBL2 for reading.
図54は、実施形態に係る磁気デバイスを例示する模式図である。
図54に示すように、実施形態に係る磁気デバイス187bにおいても、第1素子11E,第2素子12E、第1トランジスタTr1、第2トランジスタTr2、及び、第1~第6配線77A~77Fを含む。磁気デバイス187bにおけるこれらの要素の電気的な接続関係は、磁気デバイス187aにおける電気的な接続関係と同じである。磁気デバイス187aにおける配線の延びる方向は、磁気デバイス187aにおける配線の延びる方向と異なる。 FIG. 54 is a schematic view illustrating the magnetic device according to the embodiment.
As shown in FIG. 54, themagnetic device 187b according to the embodiment also includes the first element 11E, the second element 12E, the first transistor Tr1, the second transistor Tr2, and the first to sixth wirings 77A to 77F. .. The electrical connection of these elements in the magnetic device 187b is the same as the electrical connection in the magnetic device 187a. The extending direction of the wiring in the magnetic device 187a is different from the extending direction of the wiring in the magnetic device 187a.
図54に示すように、実施形態に係る磁気デバイス187bにおいても、第1素子11E,第2素子12E、第1トランジスタTr1、第2トランジスタTr2、及び、第1~第6配線77A~77Fを含む。磁気デバイス187bにおけるこれらの要素の電気的な接続関係は、磁気デバイス187aにおける電気的な接続関係と同じである。磁気デバイス187aにおける配線の延びる方向は、磁気デバイス187aにおける配線の延びる方向と異なる。 FIG. 54 is a schematic view illustrating the magnetic device according to the embodiment.
As shown in FIG. 54, the
磁気デバイス187bにおいて、例えば、第1配線77A、第3配線77C及び第5配線77Eは、第1延在方向Dx1(例えば、Y軸方向及びX軸方向の一方)に沿って延びる。第2配線77B、第4配線77D及び第6配線77Fは、第1延在方向Dx1と交差する第2延在方向Dx2(例えば、Y軸方向及びX軸方向の他方)に沿って延びる。
In the magnetic device 187b, for example, the first wiring 77A, the third wiring 77C, and the fifth wiring 77E extend along the first extending direction Dx1 (for example, one of the Y-axis direction and the X-axis direction). The second wiring 77B, the fourth wiring 77D, and the sixth wiring 77F extend along the second extending direction Dx2 (for example, the other in the Y-axis direction and the X-axis direction) intersecting the first extending direction Dx1.
磁気デバイス187bにおいて、第1配線77Aは、例えば、書き込み用のビット線WBL1である。第2配線77Bは、例えば、ワード線WLである。第3配線77Cは、例えば、ソース線SLである。第4配線77Dは、例えば、読み出し用のビット線RBL1である。第5配線77Eは、例えば、書き込み用のビット線WBL2である。第6配線77Fは、例えば、読み出し用のビット線RBL2である。
In the magnetic device 187b, the first wiring 77A is, for example, a bit line WBL1 for writing. The second wiring 77B is, for example, a word line WL. The third wiring 77C is, for example, a source line SL. The fourth wiring 77D is, for example, a bit line RBL1 for reading. The fifth wiring 77E is, for example, a bit line WBL2 for writing. The sixth wiring 77F is, for example, a bit line RBL2 for reading.
図55は、実施形態に係る磁気デバイスを例示する模式図である。
図55に示すように、実施形態に係る磁気デバイス187cは、第1素子11E、第2素子12E、第1トランジスタTr1、第2トランジスタTr2、及び、第1~第6配線77A~77Fに加えて、第3素子13E、第4素子14E、第3トランジスタTr3、第4トランジスタTr4、及び、第7~第11配線77G~77Kを含む。磁気デバイス187cにおいて、第1素子11E、第2素子12E、第1トランジスタTr1、第2トランジスタTr2、及び、第1~第6配線77A~77Fの構成は、例えば、磁気デバイス187aにおける構成と同様で良い。磁気デバイス187cは、磁気デバイス180と実質的に同様で良い。 FIG. 55 is a schematic view illustrating the magnetic device according to the embodiment.
As shown in FIG. 55, themagnetic device 187c according to the embodiment is in addition to the first element 11E, the second element 12E, the first transistor Tr1, the second transistor Tr2, and the first to sixth wirings 77A to 77F. , Third element 13E, fourth element 14E, third transistor Tr3, fourth transistor Tr4, and seventh to eleventh wirings 77G to 77K. In the magnetic device 187c, the configurations of the first element 11E, the second element 12E, the first transistor Tr1, the second transistor Tr2, and the first to sixth wirings 77A to 77F are the same as those in the magnetic device 187a, for example. good. The magnetic device 187c may be substantially similar to the magnetic device 180.
図55に示すように、実施形態に係る磁気デバイス187cは、第1素子11E、第2素子12E、第1トランジスタTr1、第2トランジスタTr2、及び、第1~第6配線77A~77Fに加えて、第3素子13E、第4素子14E、第3トランジスタTr3、第4トランジスタTr4、及び、第7~第11配線77G~77Kを含む。磁気デバイス187cにおいて、第1素子11E、第2素子12E、第1トランジスタTr1、第2トランジスタTr2、及び、第1~第6配線77A~77Fの構成は、例えば、磁気デバイス187aにおける構成と同様で良い。磁気デバイス187cは、磁気デバイス180と実質的に同様で良い。 FIG. 55 is a schematic view illustrating the magnetic device according to the embodiment.
As shown in FIG. 55, the
第3トランジスタTr3は、第3端Ts3、第3他端Td3及び第3ゲートTg3を含む。第4トランジスタTr4は、第4端Ts4、第4他端Td4及び第4ゲートTg4を含む。第3トランジスタTr3及び第4トランジスタTr4の導電形は、第1トランジスタTr1の導電形と同じでも、異なっても良い。
The third transistor Tr3 includes a third end Ts3, a third other end Td3, and a third gate Tg3. The fourth transistor Tr4 includes a fourth end Ts4, a fourth other end Td4, and a fourth gate Tg4. The conductive type of the third transistor Tr3 and the fourth transistor Tr4 may be the same as or different from the conductive type of the first transistor Tr1.
磁気デバイス187cにおいても、第3素子13E及び第4素子14Eのそれぞれは、上記の、第1導電部材21、第1積層体S1及び第1ダイオードDE1を含む(図44(a)及び図44(b)参照)。第1ダイオードDE1のアノードDA1及びカソードDC1の一方(例えばアノードDA1)は、第1磁性層11と電気的に接続される。
Also in the magnetic device 187c, each of the third element 13E and the fourth element 14E includes the first conductive member 21, the first laminated body S1 and the first diode DE1 described above (FIGS. 44 (a) and 44 (FIG. 44). b) See). One of the anode DA1 and the cathode DC1 of the first diode DE1 (for example, the anode DA1) is electrically connected to the first magnetic layer 11.
図55に示すように、第3他端Td3は、第3素子13Eの第1導電部材21の第1部分21aと電気的に接続される。第4他端Td4は、第4素子14Eの第1導電部材21の第1部分21aと電気的に接続される。
As shown in FIG. 55, the third other end Td3 is electrically connected to the first portion 21a of the first conductive member 21 of the third element 13E. The fourth other end Td4 is electrically connected to the first portion 21a of the first conductive member 21 of the fourth element 14E.
第3配線77Cは、第3端Ts3及び第4端Ts4とさらに電気的に接続される。第7配線77Gは、第3ゲートTg3及び第4ゲートTg4と電気的に接続される。第8配線77Hは、第3素子13Eの第1導電部材21の第2部分21bと電気的に接続される。第9配線77Iは、第3素子13Eの第1ダイオードDE1のアノードDA1及びカソードDC1の他方と電気的に接続される。第10配線77Jは、第4素子14Eの第1導電部材21の第2部分21bと電気的に接続される。第11配線77Kは、第4素子14Eの第1ダイオードDE1のアノードDA1及びカソードDC1の他方と電気的に接続される。
The third wiring 77C is further electrically connected to the third end Ts3 and the fourth end Ts4. The seventh wiring 77G is electrically connected to the third gate Tg3 and the fourth gate Tg4. The eighth wiring 77H is electrically connected to the second portion 21b of the first conductive member 21 of the third element 13E. The ninth wiring 77I is electrically connected to the other of the anode DA1 and the cathode DC1 of the first diode DE1 of the third element 13E. The tenth wiring 77J is electrically connected to the second portion 21b of the first conductive member 21 of the fourth element 14E. The eleventh wiring 77K is electrically connected to the other of the anode DA1 and the cathode DC1 of the first diode DE1 of the fourth element 14E.
磁気デバイス187cにおいて、例えば、第1配線77A、第3配線77C、第4配線77D、第5配線77E、第6配線77F、第8配線77H、第9配線77I、第10配線77J及び第11配線77Kは、第1延在方向Dx1(例えば、Y軸方向及びX軸方向の一方)に沿って延びる。第2配線77B及び第7配線77Gは、第1延在方向Dx1と交差する第2延在方向Dx2(例えばY軸方向及びX軸方向の他方)に沿って延びる。
In the magnetic device 187c, for example, the first wiring 77A, the third wiring 77C, the fourth wiring 77D, the fifth wiring 77E, the sixth wiring 77F, the eighth wiring 77H, the ninth wiring 77I, the tenth wiring 77J, and the eleventh wiring. 77K extends along the first extending direction Dx1 (for example, one of the Y-axis direction and the X-axis direction). The second wiring 77B and the seventh wiring 77G extend along the second extending direction Dx2 (for example, the other in the Y-axis direction and the X-axis direction) intersecting the first extending direction Dx1.
磁気デバイス187cにおいて、第1配線77Aは、例えば、書き込み用のビット線WBL1である。第2配線77Bは、例えば、ワード線WL1である。第3配線77Cは、例えば、ソース線SLである。第4配線77Dは、例えば、読み出し用のビット線RBL1である。第5配線77Eは、例えば、書き込み用のビット線WBL2である。第6配線77Fは、例えば、読み出し用のビット線RBL2である。第7配線77Gは、例えば、ワード線WL2である。第8配線77Hは、例えば、書き込み用のビット線WBL3である。第9配線77Iは、例えば、読み出し用のビット線RBL3である。第10配線77Jは、例えば、書き込み用のビット線WBL4である。第11配線77Kは、例えば、読み出し用のビット線WBL4である。
In the magnetic device 187c, the first wiring 77A is, for example, a bit line WBL1 for writing. The second wiring 77B is, for example, the word line WL1. The third wiring 77C is, for example, a source line SL. The fourth wiring 77D is, for example, a bit line RBL1 for reading. The fifth wiring 77E is, for example, a bit line WBL2 for writing. The sixth wiring 77F is, for example, a bit line RBL2 for reading. The seventh wiring 77G is, for example, the word line WL2. The eighth wiring 77H is, for example, a bit line WBL3 for writing. The ninth wiring 77I is, for example, a bit line RBL3 for reading. The tenth wiring 77J is, for example, a bit line WBL4 for writing. The eleventh wiring 77K is, for example, a bit line WBL4 for reading.
図56は、実施形態に係る磁気デバイスを例示する模式図である。
図56に示すように、実施形態に係る磁気デバイス187dも、第1~第4素子11E~14E、第1~第4トランジスタTr1~TR4、及び、第1~第11配線77A~77Kを含む。磁気デバイス187dにおいて、トランジスタ及び配線の電気的な接続関係は、磁気デバイス187cにおけるそれと同様である。磁気デバイス187dにおける配線の延びる方向は、磁気デバイス187cにおける配線の延びる方向と異なる。 FIG. 56 is a schematic view illustrating the magnetic device according to the embodiment.
As shown in FIG. 56, themagnetic device 187d according to the embodiment also includes the first to fourth elements 11E to 14E, the first to fourth transistors Tr1 to TR4, and the first to eleventh wirings 77A to 77K. In the magnetic device 187d, the electrical connection relationship between the transistor and the wiring is the same as that in the magnetic device 187c. The extending direction of the wiring in the magnetic device 187d is different from the extending direction of the wiring in the magnetic device 187c.
図56に示すように、実施形態に係る磁気デバイス187dも、第1~第4素子11E~14E、第1~第4トランジスタTr1~TR4、及び、第1~第11配線77A~77Kを含む。磁気デバイス187dにおいて、トランジスタ及び配線の電気的な接続関係は、磁気デバイス187cにおけるそれと同様である。磁気デバイス187dにおける配線の延びる方向は、磁気デバイス187cにおける配線の延びる方向と異なる。 FIG. 56 is a schematic view illustrating the magnetic device according to the embodiment.
As shown in FIG. 56, the
磁気デバイス187dにおいて、例えば、第1配線77A、第3配線77C、第5配線77E、第8配線77H、及び、第10配線77Jは、第1延在方向Dx1(例えばY軸方向及びX軸方向の一方)に沿って延びる。第2配線77B、第4配線77D、第6配線77F、第7配線77G、第9配線77I、第11配線77Kは、第1延在方向Dx1と交差する第2延在方向Dx2(例えばY軸方向及びX軸方向の他方)に沿って延びる。
In the magnetic device 187d, for example, the first wiring 77A, the third wiring 77C, the fifth wiring 77E, the eighth wiring 77H, and the tenth wiring 77J have the first extending direction Dx1 (for example, the Y-axis direction and the X-axis direction). Extends along one). The second wiring 77B, the fourth wiring 77D, the sixth wiring 77F, the seventh wiring 77G, the ninth wiring 77I, and the eleventh wiring 77K have a second extending direction Dx2 (for example, the Y axis) that intersects the first extending direction Dx1. Extends along the direction (the other in the direction and the X-axis direction).
磁気デバイス187dにおいて、第1配線77Aは、例えば、書き込み用のビット線WBL1である。第2配線77Bは、例えば、ワード線WL1である。第3配線77Cは、例えば、ソース線SLである。第4配線77Dは、例えば、読み出し用のワード線RWL1である。第5配線77Eは、例えば、書き込み用のビット線WBL2である。第6配線77Fは、例えば、読み出し用のワード線RWL2である。第7配線77Gは、例えば、ワード線WL2である。第8配線77Hは、例えば、書き込み用のビット線WBL3である。第9配線77Iは、例えば、読み出し用のワード線RWL3である。第10配線77Jは、例えば、書き込み用のビット線WBL4である。第11配線77Kは、例えば、読み出し用のワード線RWL4である。
In the magnetic device 187d, the first wiring 77A is, for example, a bit line WBL1 for writing. The second wiring 77B is, for example, the word line WL1. The third wiring 77C is, for example, a source line SL. The fourth wiring 77D is, for example, a word line RWL1 for reading. The fifth wiring 77E is, for example, a bit line WBL2 for writing. The sixth wiring 77F is, for example, a word line RWL2 for reading. The seventh wiring 77G is, for example, the word line WL2. The eighth wiring 77H is, for example, a bit line WBL3 for writing. The ninth wiring 77I is, for example, a word line RWL3 for reading. The tenth wiring 77J is, for example, a bit line WBL4 for writing. The eleventh wiring 77K is, for example, a word line RWL4 for reading.
図57は、実施形態に係る磁気デバイスを例示する模式図である。
図57に示すように、実施形態に係る磁気デバイス187dにおいて、第1素子11Eの第1部分21aが、第1他端Td1と接続される。第2素子12Eの第1部分21aが、第2他端Td2と接続される。第3素子13Eの第1部分21aが、第3他端Td3と接続される。第4素子14Eの第1部分21aが、第4他端Td4と接続される。 FIG. 57 is a schematic view illustrating the magnetic device according to the embodiment.
As shown in FIG. 57, in themagnetic device 187d according to the embodiment, the first portion 21a of the first element 11E is connected to the first other end Td1. The first portion 21a of the second element 12E is connected to the second other end Td2. The first portion 21a of the third element 13E is connected to the third other end Td3. The first portion 21a of the fourth element 14E is connected to the fourth other end Td4.
図57に示すように、実施形態に係る磁気デバイス187dにおいて、第1素子11Eの第1部分21aが、第1他端Td1と接続される。第2素子12Eの第1部分21aが、第2他端Td2と接続される。第3素子13Eの第1部分21aが、第3他端Td3と接続される。第4素子14Eの第1部分21aが、第4他端Td4と接続される。 FIG. 57 is a schematic view illustrating the magnetic device according to the embodiment.
As shown in FIG. 57, in the
図58は、実施形態に係る磁気デバイスを例示する模式図である。
図58に示すように、実施形態に係る磁気デバイス187eは、第1素子11E、第2素子12E、第1トランジスタTr1、第2トランジスタTr2、第1~第7配線77A~77Gを含む。第1トランジスタTr1は、第1端Ts1、第1他端Td1及び第1ゲートTg1を含む。第2トランジスタTr2は、第2端Ts2、第2他端Td2及び第2ゲートTg2を含む。第2トランジスタTr2の導電形は、第1トランジスタTr1の導電形と同じでも、異なっても良い。 FIG. 58 is a schematic view illustrating the magnetic device according to the embodiment.
As shown in FIG. 58, themagnetic device 187e according to the embodiment includes a first element 11E, a second element 12E, a first transistor Tr1, a second transistor Tr2, and first to seventh wirings 77A to 77G. The first transistor Tr1 includes a first end Ts1, a first other end Td1, and a first gate Tg1. The second transistor Tr2 includes a second end Ts2, a second other end Td2, and a second gate Tg2. The conductive type of the second transistor Tr2 may be the same as or different from the conductive type of the first transistor Tr1.
図58に示すように、実施形態に係る磁気デバイス187eは、第1素子11E、第2素子12E、第1トランジスタTr1、第2トランジスタTr2、第1~第7配線77A~77Gを含む。第1トランジスタTr1は、第1端Ts1、第1他端Td1及び第1ゲートTg1を含む。第2トランジスタTr2は、第2端Ts2、第2他端Td2及び第2ゲートTg2を含む。第2トランジスタTr2の導電形は、第1トランジスタTr1の導電形と同じでも、異なっても良い。 FIG. 58 is a schematic view illustrating the magnetic device according to the embodiment.
As shown in FIG. 58, the
磁気デバイス187eにおいても、第1素子11E及び第2素子12Eのそれぞれは、上記の、第1導電部材21、第1積層体S1及び第1ダイオードDE1を含む(図39(a)及び図39(b)参照)。第1ダイオードDE1のアノードDA1及びカソードDC1の一方(例えばアノードDA1)は、第1磁性層11と電気的に接続される。
Also in the magnetic device 187e, each of the first element 11E and the second element 12E includes the first conductive member 21, the first laminated body S1 and the first diode DE1 described above (FIGS. 39 (a) and 39 (FIG. 39) and FIG. 39 (FIG. 39). b) See). One of the anode DA1 and the cathode DC1 of the first diode DE1 (for example, the anode DA1) is electrically connected to the first magnetic layer 11.
図58に示すように、第1他端Td1は、第1素子11Eの第1導電部材21の第1部分21aと電気的に接続される。第2他端Td2は、第2素子12Eの第1導電部材21の第1部分21aと電気的に接続される。
As shown in FIG. 58, the first other end Td1 is electrically connected to the first portion 21a of the first conductive member 21 of the first element 11E. The second other end Td2 is electrically connected to the first portion 21a of the first conductive member 21 of the second element 12E.
第1配線77Aは、第1素子11Eの第1導電部材21の第2部分21b、及び、第2素子12Eの第1導電部材21の第2部分21bと電気的に接続される。第2配線77Bは、第1ゲートTg1と電気的に接続される。第3配線77Cは、第1端Ts1と電気的に接続される。第4配線77Dは、第1素子11Eの第1ダイオードDE1のアノードDA1及びカソードDC1の他方(例えばカソードDC1)と電気的に接続される。第5配線77Eは、第2ゲートTg2と電気的に接続される。第6配線77Fは、第2端Ts2と電気的に接続される。第7配線77Gは、第2素子12Eの第1ダイオードDE1のアノードDA1及びカソードDC1の他方(例えばカソードDC1)と電気的に接続される。
The first wiring 77A is electrically connected to the second portion 21b of the first conductive member 21 of the first element 11E and the second portion 21b of the first conductive member 21 of the second element 12E. The second wiring 77B is electrically connected to the first gate Tg1. The third wiring 77C is electrically connected to the first end Ts1. The fourth wiring 77D is electrically connected to the anode DA1 of the first diode DE1 of the first element 11E and the other of the cathode DC1 (for example, the cathode DC1). The fifth wiring 77E is electrically connected to the second gate Tg2. The sixth wiring 77F is electrically connected to the second end Ts2. The seventh wiring 77G is electrically connected to the anode DA1 of the first diode DE1 of the second element 12E and the other of the cathode DC1 (for example, the cathode DC1).
磁気デバイス187eにおいて、第1配線77A、第3配線77C及び第6配線77Fは、第1延在方向Dx1(例えばY軸方向及びX軸方向の一方)に沿って延びる。例えば、第2配線77B、第4配線77D、第5配線77E及び第7配線77Gは、第1延在方向Dx1と交差する第2延在方向Dx2(例えばY軸方向及びX軸方向の他方)に沿って延びる。
In the magnetic device 187e, the first wiring 77A, the third wiring 77C, and the sixth wiring 77F extend along the first extending direction Dx1 (for example, one of the Y-axis direction and the X-axis direction). For example, the second wiring 77B, the fourth wiring 77D, the fifth wiring 77E, and the seventh wiring 77G have a second extending direction Dx2 (for example, the other in the Y-axis direction and the X-axis direction) intersecting with the first extending direction Dx1. Extend along.
磁気デバイス187eにおいて、第1配線77Aは、例えば、コモン線CLである。第2配線77Bは、例えば、ワード線WL1である。第3配線77Cは、例えば、ソース線SL1(または書き込み用のビット線WBL1)である。第4配線77Dは、例えば、読み出し用のビット線RBL1-Lである。第5配線77Eは、例えば、ワード線WL2である。第6配線77Fは、例えば、ソース線SL2(または書き込み用のビット線WBL2)である。第7配線77Gは、例えば、読み出し用のビット線RBL1-Rである。
In the magnetic device 187e, the first wiring 77A is, for example, a common line CL. The second wiring 77B is, for example, the word line WL1. The third wiring 77C is, for example, the source line SL1 (or the bit line WBL1 for writing). The fourth wiring 77D is, for example, a bit line RBL1-L for reading. The fifth wiring 77E is, for example, the word line WL2. The sixth wiring 77F is, for example, a source line SL2 (or a bit line WBL2 for writing). The seventh wiring 77G is, for example, a bit line RBL1-R for reading.
図59は、実施形態に係る磁気デバイスを例示する模式図である。
図59に示すように、実施形態に係る磁気デバイス187fは、第1素子11E、第2素子12E、第1トランジスタTr1、第2トランジスタTr2、及び、第1~第7配線77A~77Gに加えて、第3素子13E、第4素子14E、第3トランジスタTr3、第4トランジスタTr4、及び、第8~第10配線77H~77Jを含む。磁気デバイス187fにおいて、第1素子11E、第2素子12E、第1トランジスタTr1、第2トランジスタTr2、及び、第1~第7配線77A~77Gの構成は、例えば、磁気デバイス187eにおける構成と同様で良い。 FIG. 59 is a schematic view illustrating the magnetic device according to the embodiment.
As shown in FIG. 59, themagnetic device 187f according to the embodiment is in addition to the first element 11E, the second element 12E, the first transistor Tr1, the second transistor Tr2, and the first to seventh wirings 77A to 77G. , Third element 13E, fourth element 14E, third transistor Tr3, fourth transistor Tr4, and eighth to tenth wirings 77H to 77J. In the magnetic device 187f, the configurations of the first element 11E, the second element 12E, the first transistor Tr1, the second transistor Tr2, and the first to seventh wirings 77A to 77G are the same as those in the magnetic device 187e, for example. good.
図59に示すように、実施形態に係る磁気デバイス187fは、第1素子11E、第2素子12E、第1トランジスタTr1、第2トランジスタTr2、及び、第1~第7配線77A~77Gに加えて、第3素子13E、第4素子14E、第3トランジスタTr3、第4トランジスタTr4、及び、第8~第10配線77H~77Jを含む。磁気デバイス187fにおいて、第1素子11E、第2素子12E、第1トランジスタTr1、第2トランジスタTr2、及び、第1~第7配線77A~77Gの構成は、例えば、磁気デバイス187eにおける構成と同様で良い。 FIG. 59 is a schematic view illustrating the magnetic device according to the embodiment.
As shown in FIG. 59, the
第3トランジスタTr3は、第3端Ts3、第3他端Td3及び第3ゲートTg3を含む。第4トランジスタTr4は、第4端Ts4、第4他端Td4及び第4ゲートTg4を含む。第3トランジスタTr3及び第4トランジスタTr4の導電形は、第1トランジスタTr1の導電形と同じでも、異なっても良い。
The third transistor Tr3 includes a third end Ts3, a third other end Td3, and a third gate Tg3. The fourth transistor Tr4 includes a fourth end Ts4, a fourth other end Td4, and a fourth gate Tg4. The conductive type of the third transistor Tr3 and the fourth transistor Tr4 may be the same as or different from the conductive type of the first transistor Tr1.
磁気デバイス187fにおいても、第3素子13E及び第4素子14Eのそれぞれは、上記の、第1導電部材21、第1積層体S1及び第1ダイオードDE1を含む(図44(a)及び図44(b)参照)。第1ダイオードDE1のアノードDA1及びカソードDC1の一方(例えばアノードDA1)は、第1磁性層11と電気的に接続される。
Also in the magnetic device 187f, each of the third element 13E and the fourth element 14E includes the first conductive member 21, the first laminated body S1 and the first diode DE1 described above (FIGS. 44 (a) and 44 (FIG. 44). b) See). One of the anode DA1 and the cathode DC1 of the first diode DE1 (for example, the anode DA1) is electrically connected to the first magnetic layer 11.
図59に示すように、第3他端Td3は、第3素子13Eの第1導電部材21の第1部分21aと電気的に接続される。第4他端Td4は、第4素子14Eの第1導電部材21の第1部分21aと電気的に接続される。
As shown in FIG. 59, the third other end Td3 is electrically connected to the first portion 21a of the first conductive member 21 of the third element 13E. The fourth other end Td4 is electrically connected to the first portion 21a of the first conductive member 21 of the fourth element 14E.
第1配線77Aは、第1素子11Eの第1導電部材21の第2部分21b、及び、第2素子12Eの第1導電部材21の第2部分21bと電気的に接続される。第2配線77Bは、第1ゲートTg1に加えて、第3ゲートTg3とさらに電気的に接続される。第3配線77Cは、第1端Ts1に加えて、第3端Ts3とさらに電気的に接続される。第4配線77Dは、第1素子11Eの第1ダイオードDE1のアノードDA1及びカソードDC1の他方(例えばカソードDC1)と電気的に接続される。第5配線77Eは、第2ゲートTg2に加えて、第4ゲートTg4とさらに電気的に接続される。第6配線77Fは、第2端Ts2に加えて、第4端Ts4とさらに電気的に接続される。第7配線77Gは、第2素子12Eの第1ダイオードDE1のアノードDA1及びカソードDC1の他方(例えばカソードDC1)と電気的に接続される。
The first wiring 77A is electrically connected to the second portion 21b of the first conductive member 21 of the first element 11E and the second portion 21b of the first conductive member 21 of the second element 12E. The second wiring 77B is further electrically connected to the third gate Tg3 in addition to the first gate Tg1. The third wiring 77C is further electrically connected to the third end Ts3 in addition to the first end Ts1. The fourth wiring 77D is electrically connected to the anode DA1 of the first diode DE1 of the first element 11E and the other of the cathode DC1 (for example, the cathode DC1). The fifth wiring 77E is further electrically connected to the fourth gate Tg4 in addition to the second gate Tg2. The sixth wiring 77F is further electrically connected to the fourth end Ts4 in addition to the second end Ts2. The seventh wiring 77G is electrically connected to the anode DA1 of the first diode DE1 of the second element 12E and the other of the cathode DC1 (for example, the cathode DC1).
第8配線77Hは、第3素子13Eの第1導電部材21の第2部分21b、及び、第4素子14Eの第1導電部材21の第2部分21bと電気的に接続される。第9配線77Iは、第3素子13Eの第1ダイオードDE1のアノードDA1及びカソードDC1の他方(例えばカソードDC1)と電気的に接続される。第10配線77Jは、第4素子14Eの第1ダイオードDE1のアノードDA1及びカソードDC1の他方(例えばカソードDC1)と電気的に接続される。
The eighth wiring 77H is electrically connected to the second portion 21b of the first conductive member 21 of the third element 13E and the second portion 21b of the first conductive member 21 of the fourth element 14E. The ninth wiring 77I is electrically connected to the anode DA1 of the first diode DE1 of the third element 13E and the other of the cathode DC1 (for example, the cathode DC1). The tenth wiring 77J is electrically connected to the other of the anode DA1 and the cathode DC1 (for example, the cathode DC1) of the first diode DE1 of the fourth element 14E.
磁気デバイス187fにおいて、第1配線77A、第3配線77C、第6配線77F及び第8配線77Hは、第1延在方向Dx1(例えばY軸方向及びX軸方向の一方)に沿って延びる。第2配線77B、第4配線77D、第5配線77E、第7配線77G、第9配線77I及び第10配線77Jは、第1延在方向Dx1と交差する第2延在方向Dx2(例えばY軸方向及びX軸方向の他方)に沿って延びる。
In the magnetic device 187f, the first wiring 77A, the third wiring 77C, the sixth wiring 77F, and the eighth wiring 77H extend along the first extending direction Dx1 (for example, one of the Y-axis direction and the X-axis direction). The second wiring 77B, the fourth wiring 77D, the fifth wiring 77E, the seventh wiring 77G, the ninth wiring 77I, and the tenth wiring 77J intersect the first extending direction Dx1 with the second extending direction Dx2 (for example, the Y axis). Extends along the direction (the other in the direction and the X-axis direction).
磁気デバイス187fにおいて、例えば、第1配線77Aは、例えば、コモン線CL1である。第2配線77Bは、例えば、ワード線WL1である。第3配線77Cは、ソース線SL1(または書き込み用のビット線WBL1)である。第4配線77Dは、例えば、読み出し用のビット線RBL1-Lである。第5配線77Eは、例えば、ワード線WL2である。第6配線77Fは、例えば、ソース線SL2(または書き込み用のビット線WBL2)である。第7配線77Gは、例えば、読み出し用のビット線RBL1-Rである。第8配線77Hは、例えば、コモン線CL2である。第9配線77Iは、例えば、読み出し用のビット線RBL2-Lである。第10配線77Jは、例えば、読み出し用のビット線RBL2-Lである。
In the magnetic device 187f, for example, the first wiring 77A is, for example, the common line CL1. The second wiring 77B is, for example, the word line WL1. The third wiring 77C is a source line SL1 (or a bit line WBL1 for writing). The fourth wiring 77D is, for example, a bit line RBL1-L for reading. The fifth wiring 77E is, for example, the word line WL2. The sixth wiring 77F is, for example, a source line SL2 (or a bit line WBL2 for writing). The seventh wiring 77G is, for example, a bit line RBL1-R for reading. The eighth wiring 77H is, for example, the common line CL2. The ninth wiring 77I is, for example, a bit line RBL2-L for reading. The tenth wiring 77J is, for example, a bit line RBL2-L for reading.
図60及び図61は、実施形態に係る磁気デバイスを例示する模式的平面図である。
図62~図73は、実施形態に係る磁気デバイスを例示する模式的断面図である。 60 and 61 are schematic plan views illustrating the magnetic device according to the embodiment.
62 to 73 are schematic cross-sectional views illustrating the magnetic device according to the embodiment.
図62~図73は、実施形態に係る磁気デバイスを例示する模式的断面図である。 60 and 61 are schematic plan views illustrating the magnetic device according to the embodiment.
62 to 73 are schematic cross-sectional views illustrating the magnetic device according to the embodiment.
図60は、トランジスタ(半導体領域)を含む平面における平面図である。図61は、一部の構成要素を透過したときの平面図である。これらの平面は、Z軸方向に対して実質的に垂直である。図62~図68は、図60及び図61のX1-X1線、X2-X2線、X3-X3線、X4-X4線、X5-X5線、X6-X6線、及び、X7-X7線に沿う断面図である。図69~図73は、図60及び図61のY1-Y1線、Y2-Y2線、Y3-Y3線、Y4-Y4線、及び、Y5-Y5線に沿う断面図である。
FIG. 60 is a plan view of a plane including a transistor (semiconductor region). FIG. 61 is a plan view when some of the components are transparent. These planes are substantially perpendicular to the Z-axis direction. 62 to 68 show the X1-X1 line, X2-X2 line, X3-X3 line, X4-X4 line, X5-X5 line, X6-X6 line, and X7-X7 line of FIGS. 60 and 61. It is a cross-sectional view along. 69 to 73 are cross-sectional views taken along the lines Y1-Y1, Y2-Y2, Y3-Y3, Y4-Y4, and Y5-Y5 of FIGS. 60 and 61.
図62~図73に示すように、第1~第4トランジスタTr1~Tr4は、半導体領域79に含まれる。半導体領域79は、例えば、半導体基板で良い。例えば、半導体領域79の上に、第1~第4素子11E~14E、及び、第1~第10配線77A~77Jが設けられる。
As shown in FIGS. 62 to 73, the first to fourth transistors Tr1 to Tr4 are included in the semiconductor region 79. The semiconductor region 79 may be, for example, a semiconductor substrate. For example, the first to fourth elements 11E to 14E and the first to tenth wirings 77A to 77J are provided on the semiconductor region 79.
図62に示すように、第3他端Td3は、接続部材78d及び接続部材78cにより、第3素子13Eに対応する第1導電部材21と電気的に接続される。第8配線77Hは、第3方向において、第1配線77Aと重なる。第3方向は、第1延在方向Dx1及び第2延在方向Dx2を含む平面と交差する。第3方向は、例えばZ軸方向である。第1配線77A及び第8配線77Hの第2延在方向Dx2における位置は、第3配線77Cの第2延在方向Dx2における位置と、第6配線77Fの第2延在方向Dx2における位置と、の間にある。第1他端Td1は、接続部材78sにより、第1素子11Eに対応する第1導電部材21と電気的に接続される。
As shown in FIG. 62, the third other end Td3 is electrically connected to the first conductive member 21 corresponding to the third element 13E by the connecting member 78d and the connecting member 78c. The eighth wiring 77H overlaps with the first wiring 77A in the third direction. The third direction intersects the plane containing the first extending direction Dx1 and the second extending direction Dx2. The third direction is, for example, the Z-axis direction. The positions of the first wiring 77A and the eighth wiring 77H in the second extending direction Dx2 are the position of the third wiring 77C in the second extending direction Dx2 and the position of the sixth wiring 77F in the second extending direction Dx2. Is between. The first other end Td1 is electrically connected to the first conductive member 21 corresponding to the first element 11E by the connecting member 78s.
図63に示すように、第1素子11Eの第1ダイオードDE1は、接続部材78aにより、第4配線77Dと電気的に接続される。第3素子13Eの第1ダイオードDE1は、接続部材78bにより、第9配線77Iと電気的に接続される。第9配線77Iは、第3方向(例えばZ軸方向)において、第4配線77Dと重なる。
As shown in FIG. 63, the first diode DE1 of the first element 11E is electrically connected to the fourth wiring 77D by the connecting member 78a. The first diode DE1 of the third element 13E is electrically connected to the ninth wiring 77I by the connecting member 78b. The ninth wiring 77I overlaps with the fourth wiring 77D in the third direction (for example, the Z-axis direction).
図64に示すように、第3端Ts3は、接続部材78j、78k及び78lを介して第3配線77Cと電気的に接続される。第1端Ts1は、接続部材78i、78k及び78lを介して第3配線77Cと電気的に接続でされる。
As shown in FIG. 64, the third end Ts3 is electrically connected to the third wiring 77C via the connecting members 78j, 78k and 78l. The first end Ts1 is electrically connected to the third wiring 77C via the connecting members 78i, 78k and 78l.
図65に示すように、第1素子11E及び第2素子12Eに対応する第1導電部材21は、接続部材78qを介して第1配線77Aと電気的に接続される。第3素子13E及び第4素子14Eに対応する第1導電部材21は、接続部材78rを介して第8配線77Hと電気的に接続される。
As shown in FIG. 65, the first conductive member 21 corresponding to the first element 11E and the second element 12E is electrically connected to the first wiring 77A via the connecting member 78q. The first conductive member 21 corresponding to the third element 13E and the fourth element 14E is electrically connected to the eighth wiring 77H via the connecting member 78r.
図66に示すように、第4端Ts4は、接続部材78n、78p及び78oを介して第6配線77Fと電気的に接続される。第2端Ts2は、接続部材78m、78p及び78oを介して第6配線77Fと電気的に接続でされる。
As shown in FIG. 66, the fourth end Ts4 is electrically connected to the sixth wiring 77F via the connecting members 78n, 78p and 78o. The second end Ts2 is electrically connected to the sixth wiring 77F via the connecting members 78m, 78p and 78o.
図67に示すように、第2素子12Eの第1ダイオードDE1は、接続部材78eにより、第7配線77Gと電気的に接続される。第4素子14Eの第1ダイオードDE1は、接続部材78fにより、第10配線77Jと電気的に接続される。第10配線77Jは、第3方向(例えばZ軸方向)において、第7配線77Gと重なる。
As shown in FIG. 67, the first diode DE1 of the second element 12E is electrically connected to the seventh wiring 77G by the connecting member 78e. The first diode DE1 of the fourth element 14E is electrically connected to the tenth wiring 77J by the connecting member 78f. The tenth wiring 77J overlaps with the seventh wiring 77G in the third direction (for example, the Z-axis direction).
図68に示すように、第4他端Td4は、接続部材78h及び接続部材78gにより、第4素子14Eに対応する第1導電部材21と電気的に接続される。第2他端Td2は、接続部材78tにより、第2素子12Eに対応する第1導電部材21と電気的に接続される。
As shown in FIG. 68, the fourth other end Td4 is electrically connected to the first conductive member 21 corresponding to the fourth element 14E by the connecting member 78h and the connecting member 78g. The second other end Td2 is electrically connected to the first conductive member 21 corresponding to the second element 12E by the connecting member 78t.
図69に示すように、第9配線77Iは、第3方向(例えばZ軸方向)において、第4配線77Dと重なる。第10配線77Jは、第3方向(例えばZ軸方向)において、第7配線77Gと重なる。第3他端Td3は、接続部材78d及び78cにより、第3素子13Eに対応する第1導電部材21と電気的に接続される。実施形態において、接続部材78dは、第3素子13Eに対応する第1導電部材21とZ軸方向において重なっても良い。この場合には、接続部材78cが省略されても良い。
As shown in FIG. 69, the ninth wiring 77I overlaps with the fourth wiring 77D in the third direction (for example, the Z-axis direction). The tenth wiring 77J overlaps with the seventh wiring 77G in the third direction (for example, the Z-axis direction). The third other end Td3 is electrically connected to the first conductive member 21 corresponding to the third element 13E by the connecting members 78d and 78c. In the embodiment, the connecting member 78d may overlap with the first conductive member 21 corresponding to the third element 13E in the Z-axis direction. In this case, the connecting member 78c may be omitted.
図70に示すように、第3配線77Cは、接続部材78l及び78kと電気的に接続される。
As shown in FIG. 70, the third wiring 77C is electrically connected to the connecting members 78l and 78k.
図71に示すように、第1他端Td1は、接続部材78sにより、第1素子11Eに対応する第1導電部材21と電気的に接続される。第2他端Td2は、接続部材78tにより、第2素子12Eに対応する第1導電部材21と電気的に接続される。第1素子11E及び第2素子12Eに対応する第1導電部材21は、接続部材78qにより、第1配線77Aと電気的に接続される。第3素子13E及び第4素子14Eに対応する第1導電部材21は、接続部材78rにより、第8配線77Hと電気的に接続される。
As shown in FIG. 71, the first other end Td1 is electrically connected to the first conductive member 21 corresponding to the first element 11E by the connecting member 78s. The second other end Td2 is electrically connected to the first conductive member 21 corresponding to the second element 12E by the connecting member 78t. The first conductive member 21 corresponding to the first element 11E and the second element 12E is electrically connected to the first wiring 77A by the connecting member 78q. The first conductive member 21 corresponding to the third element 13E and the fourth element 14E is electrically connected to the eighth wiring 77H by the connecting member 78r.
図72に示すように、第6配線77Fは、接続部材78p及び78oと電気的に接続される。
As shown in FIG. 72, the sixth wiring 77F is electrically connected to the connecting members 78p and 78o.
図73に示すように、第4他端Td4は、接続部材78h及び78gにより、第4素子14Eに対応する第1導電部材21と電気的に接続される。
As shown in FIG. 73, the fourth other end Td4 is electrically connected to the first conductive member 21 corresponding to the fourth element 14E by the connecting members 78h and 78g.
磁気デバイス187a~187fにおいて、第1ダイオードDE1は金属シリサイドを含んで良い。
In the magnetic devices 187a to 187f, the first diode DE1 may contain a metal silicide.
実施形態によれば、高密度化が可能な磁気デバイスが提供できる。
According to the embodiment, it is possible to provide a magnetic device capable of increasing the density.
本願明細書において、「垂直」及び「平行」は、厳密な垂直及び厳密な平行だけではなく、例えば製造工程におけるばらつきなどを含むものであり、実質的に垂直及び実質的に平行であれば良い。
In the present specification, "vertical" and "parallel" include not only strict vertical and strict parallel, but also variations in the manufacturing process, for example, and may be substantially vertical and substantially parallel. ..
以上、具体例を参照しつつ、本発明の実施の形態について説明した。しかし、本発明は、これらの具体例に限定されるものではない。例えば、磁気デバイスに含まれる導電部材、素子、積層体、磁性層、非磁性層、導電部、絶縁部分及び制御部などの各要素の具体的な構成に関しては、当業者が公知の範囲から適宜選択することにより本発明を同様に実施し、同様の効果を得ることができる限り、本発明の範囲に包含される。
The embodiments of the present invention have been described above with reference to specific examples. However, the present invention is not limited to these specific examples. For example, the specific configuration of each element such as a conductive member, an element, a laminate, a magnetic layer, a non-magnetic layer, a conductive part, an insulating part, and a control part included in a magnetic device can be appropriately determined from a range known to those skilled in the art. The present invention is included in the scope of the present invention as long as the present invention can be carried out in the same manner by selection and the same effect can be obtained.
各具体例のいずれか2つ以上の要素を技術的に可能な範囲で組み合わせたものも、本発明の要旨を包含する限り本発明の範囲に含まれる。
A combination of any two or more elements of each specific example to the extent technically possible is also included in the scope of the present invention as long as the gist of the present invention is included.
その他、本発明の実施の形態として上述した磁気デバイスを基にして、当業者が適宜設計変更して実施し得る全ての磁気デバイスも、本発明の要旨を包含する限り、本発明の範囲に属する。
In addition, all magnetic devices that can be appropriately designed and implemented by those skilled in the art based on the magnetic device described above as an embodiment of the present invention also belong to the scope of the present invention as long as the gist of the present invention is included. ..
その他、本発明の思想の範疇において、当業者であれば、各種の変更例及び修正例に想到し得るものであり、それら変更例及び修正例についても本発明の範囲に属するものと了解される。
In addition, within the scope of the idea of the present invention, those skilled in the art can come up with various modified examples and modified examples, and it is understood that these modified examples and modified examples also belong to the scope of the present invention. ..
本発明のいくつかの実施形態を説明したが、これらの実施形態は、例として提示したものであり、発明の範囲を限定することは意図していない。これら新規な実施形態は、その他の様々な形態で実施されることが可能であり、発明の要旨を逸脱しない範囲で、種々の省略、置き換え、変更を行うことができる。これら実施形態やその変形は、発明の範囲や要旨に含まれるとともに、請求の範囲に記載された発明とその均等の範囲に含まれる。
Although some embodiments of the present invention have been described, these embodiments are presented as examples and are not intended to limit the scope of the invention. These novel embodiments can be implemented in various other embodiments, and various omissions, replacements, and changes can be made without departing from the gist of the invention. These embodiments and modifications thereof are included in the scope and gist of the invention, and are also included in the scope of the invention described in the claims and the equivalent scope thereof.
11、12…第1、第2磁性層、
11E~18E…第1~第8素子、
11el、12el…第1、第2電極、
11m、11om、12m、12om…磁化、
11n、12n…第1、第2非磁性層、
11o、12o…第1、第2対向磁性層、
21…第1導電部材、
21a~21e…第1~第5部分、
25L、26L…下端、
25e、26e…第1、第2導電部、
25i、26i…第1、第2絶縁部分、
25p、26p…一部、
27i~27k…絶縁部、
31、32…第1、第2接続部、
35、36…第1、第2半導体部材、
70…制御部、
70A…ワード線及びソース線制御回路、
70B…ビット線制御回路、
75a~75j、75r…導電部、
77A~77K…第1~第11配線、
78a~78t…接続部材、
79…半導体領域、
110~112、120~124、130、130a~130e、131a~131f、132a~132c、133、134、140~142、150、160、170~172、180、181、185、186、187a~187f…磁気デバイス、
BL1、BL2…ビット線、
CL、CL1、CL2…コモン線、
CN1~CN4…第1~第4接続部材、
DA1…アノード、
DC1…カソード、
DE1…第1ダイオード、
Dn1、Dn2…第1、第3他端、
Dp1、Dp2…第2、第4他端、
Dr1、Dr2…第1、第2ドレイン、
Drr、Drw…ドレイン、
DsL…金属シリサイド層、
DsL1…金属層、
DsL2…シリコン層、
Dx1、Dx2…第1、第2延在方向、
Gn1、Gn2…第1、第3ゲート、
Gp1、Gp2…第2、第4ゲート、
Gr1、Gr2…第1、第2ゲート、
R-BL、RBL1~RBL4、RBL1-L、RBL1-R…ビット線、
R-WL…ワード線、
RWL1~RWL4…ワード線、
S1、S2…第1、第2積層体、
SL、SL1、SL2…ソース線、
Sn1、Sn2…第1、第3端、
Sp1、Sp2…第2、第4端、
Sr1、Sr2…第1、第2ソース、
Td1~Td9…第1~第9他端、
Tg1~Tg9…第1~第9ゲート、
Tn…トランジスタ、
Tn1、Tn2…第1、第3トランジスタ、
Tp…トランジスタ、
Tp1、Tp2…第2、第4トランジスタ、
Tr1~Tr13…第1~第13トランジスタ、
Ts1~Ts9…第1~第9端、
W-BL、WBL、WBL1~WBL4…ビット線、
W-WL、WL…ワード線、
WL1、WL2…ワード線、
W/R-BL、W/R-BL1、W/R-BL2…ビット線、
W/R-WL、W/R-WL1、W/R-WL2、W/R-WL3、W/R-WL4…ワード線、
ic1…第1電流、
rc1、rc2…読み出し電流、
sf1、sf2…第1、第2側面、
wc1、wc2…書き込み電流 11, 12 ... 1st and 2nd magnetic layers,
11E-18E ... 1st-8th elements,
11el, 12el ... 1st and 2nd electrodes,
11m, 11om, 12m, 12om ... Magnetization,
11n, 12n ... 1st and 2nd non-magnetic layers,
11o, 12o ... 1st and 2nd opposed magnetic layers,
21 ... First conductive member,
21a-21e ... 1st-5th parts,
25L, 26L ... Lower end,
25e, 26e ... 1st and 2nd conductive parts,
25i, 26i ... 1st and 2nd insulating parts,
25p, 26p ... partly
27i-27k ... Insulation part,
31, 32 ... 1st, 2nd connection,
35, 36 ... 1st and 2nd semiconductor members,
70 ... Control unit,
70A ... Word line and source line control circuit,
70B ... Bit line control circuit,
75a-75j, 75r ... Conductive part,
77A-77K ... 1st-11th wiring,
78a-78t ... Connection member,
79 ... Semiconductor area,
110-112, 120-124, 130, 130a-130e, 131a-131f, 132a-132c, 133, 134, 140-142, 150, 160, 170-172, 180, 181, 185, 186, 187a-187f ... Magnetic device,
BL1, BL2 ... Bit line,
CL, CL1, CL2 ... Common line,
CN1 to CN4 ... 1st to 4th connecting members,
DA1 ... Anode,
DC1 ... Cathode,
DE1 ... 1st diode,
Dn1, Dn2 ... 1st, 3rd other end,
Dp1, Dp2 ... 2nd, 4th other end,
Dr1, Dr2 ... 1st, 2nd drain,
Drr, Drw ... Drain,
DsL ... Metal Silicide layer,
DsL1 ... Metal layer,
DsL2 ... Silicon layer,
Dx1, Dx2 ... 1st and 2nd extending directions,
Gn1, Gn2 ... 1st and 3rd gates,
Gp1, Gp2 ... 2nd and 4th gates,
Gr1, Gr2 ... 1st and 2nd gates,
R-BL, RBL1 to RBL4, RBL1-L, RBL1-R ... Bit line,
R-WL ... word line,
RWL1 to RWL4 ... Word line,
S1, S2 ... 1st and 2nd laminated bodies,
SL, SL1, SL2 ... Source line,
Sn1, Sn2 ... 1st, 3rd end,
Sp1, Sp2 ... 2nd, 4th end,
Sr1, Sr2 ... 1st and 2nd sources,
Td1 to Td9 ... 1st to 9th other ends,
Tg1 to Tg9 ...Gates 1 to 9,
Tn ... Transistor,
Tn1, Tn2 ... 1st and 3rd transistors,
Tp ... Transistor,
Tp1, Tp2 ... 2nd and 4th transistors,
Tr1 to Tr13 ... 1st to 13th transistors,
Ts1 to Ts9 ... 1st to 9th ends,
W-BL, WBL, WBL1 to WBL4 ... Bit line,
W-WL, WL ... word line,
WL1, WL2 ... word line,
W / R-BL, W / R-BL1, W / R-BL2 ... Bit line,
W / R-WL, W / R-WL1, W / R-WL2, W / R-WL3, W / R-WL4 ... Word line,
ic1 ... 1st current,
rc1, rc2 ... Read current,
sf1, sf2 ... 1st and 2nd sides,
wc1, wc2 ... Write current
11E~18E…第1~第8素子、
11el、12el…第1、第2電極、
11m、11om、12m、12om…磁化、
11n、12n…第1、第2非磁性層、
11o、12o…第1、第2対向磁性層、
21…第1導電部材、
21a~21e…第1~第5部分、
25L、26L…下端、
25e、26e…第1、第2導電部、
25i、26i…第1、第2絶縁部分、
25p、26p…一部、
27i~27k…絶縁部、
31、32…第1、第2接続部、
35、36…第1、第2半導体部材、
70…制御部、
70A…ワード線及びソース線制御回路、
70B…ビット線制御回路、
75a~75j、75r…導電部、
77A~77K…第1~第11配線、
78a~78t…接続部材、
79…半導体領域、
110~112、120~124、130、130a~130e、131a~131f、132a~132c、133、134、140~142、150、160、170~172、180、181、185、186、187a~187f…磁気デバイス、
BL1、BL2…ビット線、
CL、CL1、CL2…コモン線、
CN1~CN4…第1~第4接続部材、
DA1…アノード、
DC1…カソード、
DE1…第1ダイオード、
Dn1、Dn2…第1、第3他端、
Dp1、Dp2…第2、第4他端、
Dr1、Dr2…第1、第2ドレイン、
Drr、Drw…ドレイン、
DsL…金属シリサイド層、
DsL1…金属層、
DsL2…シリコン層、
Dx1、Dx2…第1、第2延在方向、
Gn1、Gn2…第1、第3ゲート、
Gp1、Gp2…第2、第4ゲート、
Gr1、Gr2…第1、第2ゲート、
R-BL、RBL1~RBL4、RBL1-L、RBL1-R…ビット線、
R-WL…ワード線、
RWL1~RWL4…ワード線、
S1、S2…第1、第2積層体、
SL、SL1、SL2…ソース線、
Sn1、Sn2…第1、第3端、
Sp1、Sp2…第2、第4端、
Sr1、Sr2…第1、第2ソース、
Td1~Td9…第1~第9他端、
Tg1~Tg9…第1~第9ゲート、
Tn…トランジスタ、
Tn1、Tn2…第1、第3トランジスタ、
Tp…トランジスタ、
Tp1、Tp2…第2、第4トランジスタ、
Tr1~Tr13…第1~第13トランジスタ、
Ts1~Ts9…第1~第9端、
W-BL、WBL、WBL1~WBL4…ビット線、
W-WL、WL…ワード線、
WL1、WL2…ワード線、
W/R-BL、W/R-BL1、W/R-BL2…ビット線、
W/R-WL、W/R-WL1、W/R-WL2、W/R-WL3、W/R-WL4…ワード線、
ic1…第1電流、
rc1、rc2…読み出し電流、
sf1、sf2…第1、第2側面、
wc1、wc2…書き込み電流 11, 12 ... 1st and 2nd magnetic layers,
11E-18E ... 1st-8th elements,
11el, 12el ... 1st and 2nd electrodes,
11m, 11om, 12m, 12om ... Magnetization,
11n, 12n ... 1st and 2nd non-magnetic layers,
11o, 12o ... 1st and 2nd opposed magnetic layers,
21 ... First conductive member,
21a-21e ... 1st-5th parts,
25L, 26L ... Lower end,
25e, 26e ... 1st and 2nd conductive parts,
25i, 26i ... 1st and 2nd insulating parts,
25p, 26p ... partly
27i-27k ... Insulation part,
31, 32 ... 1st, 2nd connection,
35, 36 ... 1st and 2nd semiconductor members,
70 ... Control unit,
70A ... Word line and source line control circuit,
70B ... Bit line control circuit,
75a-75j, 75r ... Conductive part,
77A-77K ... 1st-11th wiring,
78a-78t ... Connection member,
79 ... Semiconductor area,
110-112, 120-124, 130, 130a-130e, 131a-131f, 132a-132c, 133, 134, 140-142, 150, 160, 170-172, 180, 181, 185, 186, 187a-187f ... Magnetic device,
BL1, BL2 ... Bit line,
CL, CL1, CL2 ... Common line,
CN1 to CN4 ... 1st to 4th connecting members,
DA1 ... Anode,
DC1 ... Cathode,
DE1 ... 1st diode,
Dn1, Dn2 ... 1st, 3rd other end,
Dp1, Dp2 ... 2nd, 4th other end,
Dr1, Dr2 ... 1st, 2nd drain,
Drr, Drw ... Drain,
DsL ... Metal Silicide layer,
DsL1 ... Metal layer,
DsL2 ... Silicon layer,
Dx1, Dx2 ... 1st and 2nd extending directions,
Gn1, Gn2 ... 1st and 3rd gates,
Gp1, Gp2 ... 2nd and 4th gates,
Gr1, Gr2 ... 1st and 2nd gates,
R-BL, RBL1 to RBL4, RBL1-L, RBL1-R ... Bit line,
R-WL ... word line,
RWL1 to RWL4 ... Word line,
S1, S2 ... 1st and 2nd laminated bodies,
SL, SL1, SL2 ... Source line,
Sn1, Sn2 ... 1st, 3rd end,
Sp1, Sp2 ... 2nd, 4th end,
Sr1, Sr2 ... 1st and 2nd sources,
Td1 to Td9 ... 1st to 9th other ends,
Tg1 to Tg9 ...
Tn ... Transistor,
Tn1, Tn2 ... 1st and 3rd transistors,
Tp ... Transistor,
Tp1, Tp2 ... 2nd and 4th transistors,
Tr1 to Tr13 ... 1st to 13th transistors,
Ts1 to Ts9 ... 1st to 9th ends,
W-BL, WBL, WBL1 to WBL4 ... Bit line,
W-WL, WL ... word line,
WL1, WL2 ... word line,
W / R-BL, W / R-BL1, W / R-BL2 ... Bit line,
W / R-WL, W / R-WL1, W / R-WL2, W / R-WL3, W / R-WL4 ... Word line,
ic1 ... 1st current,
rc1, rc2 ... Read current,
sf1, sf2 ... 1st and 2nd sides,
wc1, wc2 ... Write current
Claims (20)
- 第1素子と、
第2素子と、
第1端、第1他端及び第1ゲートを含む第1トランジスタと、
第2端、第2他端及び第2ゲートを含む第2トランジスタと、
第1~第6配線と、
を備え、
前記第1素子及び前記第2素子のそれぞれは、第1導電部材、第1積層体及び第1ダイオードを含み、
前記第1導電部材は、第1部分と、第2部分と、第3部分と、を含み、前記第1部分と前記第2部分との間に前記第3部分があり、
前記第1積層体は、第1磁性層と、前記第3部分と前記第1磁性層との間に設けられた第1対向磁性層と、を含み、
前記第1ダイオードのアノード及びカソードの一方は、前記第1磁性層と電気的に接続され、
前記第1他端は、前記第1素子の前記第1導電部材の前記第1部分と電気的に接続され、
前記第2他端は、前記第2素子の前記第1導電部材の前記第1部分と電気的に接続され、
前記第1配線は、前記第1素子の前記第1導電部材の前記第2部分と電気的に接続され、
前記第2配線は、前記第1ゲート及び前記第2ゲートと電気的に接続され、
前記第3配線は、前記第1端及び前記第2端と電気的に接続され、
前記第4配線は、前記第1素子の前記第1ダイオードの前記アノード及び前記カソードの他方と電気的に接続され、
前記第5配線は、前記第2素子の前記第1導電部材の前記第2部分と電気的に接続され、
前記第6配線は、前記第2素子の前記第1ダイオードの前記アノード及び前記カソードの他方と電気的に接続された、磁気デバイス。 With the first element
With the second element
A first transistor including a first end, a first other end, and a first gate,
A second transistor including a second end, a second other end, and a second gate,
1st to 6th wiring and
With
Each of the first element and the second element includes a first conductive member, a first laminate, and a first diode.
The first conductive member includes a first portion, a second portion, and a third portion, and the third portion is located between the first portion and the second portion.
The first laminated body includes a first magnetic layer and a first opposed magnetic layer provided between the third portion and the first magnetic layer.
One of the anode and cathode of the first diode is electrically connected to the first magnetic layer.
The first other end is electrically connected to the first portion of the first conductive member of the first element.
The second other end is electrically connected to the first portion of the first conductive member of the second element.
The first wiring is electrically connected to the second portion of the first conductive member of the first element.
The second wiring is electrically connected to the first gate and the second gate.
The third wiring is electrically connected to the first end and the second end.
The fourth wiring is electrically connected to the anode and the other of the cathode of the first diode of the first element.
The fifth wiring is electrically connected to the second portion of the first conductive member of the second element.
The sixth wiring is a magnetic device electrically connected to the anode of the first diode of the second element and the other of the cathode. - 前記第1配線、前記第3配線、前記第4配線、前記第5配線及び前記第6配線は、第1延在方向に沿って延び、
前記第2配線は、前記第1延在方向と交差する第2延在方向に沿って延びる、請求項1記載の磁気デバイス。 The first wiring, the third wiring, the fourth wiring, the fifth wiring, and the sixth wiring extend along the first extending direction.
The magnetic device according to claim 1, wherein the second wiring extends along a second extending direction that intersects the first extending direction. - 前記第1配線、前記第3配線及び前記第5配線は、第1延在方向に沿って延び、
前記第2配線、前記第4配線及び前記第6配線は、前記第1延在方向と交差する第2延在方向に沿って延びる、請求項1記載の磁気デバイス。 The first wiring, the third wiring, and the fifth wiring extend along the first extending direction.
The magnetic device according to claim 1, wherein the second wiring, the fourth wiring, and the sixth wiring extend along a second extending direction intersecting with the first extending direction. - 第3素子と、
第4素子と、
第3端、第3他端及び第3ゲートを含む第3トランジスタと、
第2端、第2他端及び第2ゲートを含む第4トランジスタと、
第7~第11配線と、
をさらに備え、
前記第3素子及び前記第4素子のそれぞれは、前記第1導電部材、前記第1積層体及び前記第1ダイオードを含み、
前記第3他端は、前記第3素子の前記第1導電部材の前記第1部分と電気的に接続され、
前記第4他端は、前記第4素子の前記第1導電部材の前記第1部分と電気的に接続され、
前記第3配線は、前記第3端及び前記第4端とさらに電気的に接続され、
前記第7配線は、前記第3ゲート及び前記第4ゲートと電気的に接続され、
前記第8配線は、前記第3素子の前記第1導電部材の前記第2部分と電気的に接続され、
前記第9配線は、前記第3素子の前記第1ダイオードの前記アノード及び前記カソードの他方と電気的に接続され、
前記第10配線は、前記第4素子の前記第1導電部材の前記第2部分と電気的に接続され、
前記第11配線は、前記第4素子の前記第1ダイオードの前記アノード及び前記カソードの他方と電気的に接続された、請求項1記載の磁気デバイス。 With the third element
With the 4th element
A third transistor including a third end, a third other end, and a third gate,
A fourth transistor including a second end, a second other end, and a second gate,
7th to 11th wiring and
With more
Each of the third element and the fourth element includes the first conductive member, the first laminate, and the first diode.
The third other end is electrically connected to the first portion of the first conductive member of the third element.
The fourth other end is electrically connected to the first portion of the first conductive member of the fourth element.
The third wiring is further electrically connected to the third end and the fourth end.
The seventh wiring is electrically connected to the third gate and the fourth gate.
The eighth wiring is electrically connected to the second portion of the first conductive member of the third element.
The ninth wiring is electrically connected to the anode and the other of the cathode of the first diode of the third element.
The tenth wiring is electrically connected to the second portion of the first conductive member of the fourth element.
The magnetic device according to claim 1, wherein the eleventh wiring is electrically connected to the anode of the first diode of the fourth element and the other of the cathode. - 前記第1配線、前記第3配線、前記第4配線、前記第5配線、前記第6配線、前記第8配線、前記第9配線、前記第10配線及び前記第11配線は、第1延在方向に沿って延び、
前記第2配線及び前記第7配線は、前記第1延在方向と交差する第2延在方向に沿って延びる、請求項4記載の磁気デバイス。 The first wiring, the third wiring, the fourth wiring, the fifth wiring, the sixth wiring, the eighth wiring, the ninth wiring, the tenth wiring, and the eleventh wiring are the first extension. Extend along the direction,
The magnetic device according to claim 4, wherein the second wiring and the seventh wiring extend along a second extending direction intersecting with the first extending direction. - 前記第1素子の前記第1導電部材の少なくとも一部は、前記第1素子の前記第1導電部材の前記第1部分から前記第1素子の前記第1導電部材の前記第2部分への第1方向と交差する第2方向において、前記第1トランジスタと重なり、
前記第2素子の前記第1導電部材の少なくとも一部は、前記第2方向において、前記第2トランジスタと重なり、
前記第3素子の前記第1導電部材の少なくとも一部は、前記第2方向において、前記第3トランジスタと重なり、
前記第4素子の前記第1導電部材の少なくとも一部は、前記第2方向において、前記第4トランジスタと重なり、
前記第1トランジスタから前記第4トランジスタへの方向は、前記第1方向に沿い、
前記第3トランジスタから前記第2トランジスタへの方向は、前記第1方向に沿い、
前記第3トランジスタから前記第1トランジスタへの方向は、前記第1方向及び前記第2方向を含む平面と交差する第3方向の成分を含み、
前記第2トランジスタから前記第4トランジスタへの方向は、前記第3方向の成分を含む、請求項4記載の磁気デバイス。 At least a part of the first conductive member of the first element is a first portion of the first conductive member of the first element from the first portion of the first conductive member to the second portion of the first conductive member of the first element. In the second direction intersecting the one direction, it overlaps with the first transistor and
At least a part of the first conductive member of the second element overlaps with the second transistor in the second direction.
At least a part of the first conductive member of the third element overlaps with the third transistor in the second direction.
At least a part of the first conductive member of the fourth element overlaps with the fourth transistor in the second direction.
The direction from the first transistor to the fourth transistor is along the first direction.
The direction from the third transistor to the second transistor is along the first direction.
The direction from the third transistor to the first transistor includes a component in the third direction that intersects the plane including the first direction and the second direction.
The magnetic device according to claim 4, wherein the direction from the second transistor to the fourth transistor includes a component of the third direction. - 前記第1配線、前記第3配線、前記第5配線、前記第8配線、及び、前記第10配線は、第1延在方向に沿って延び、
前記第2配線、前記第4配線、前記第6配線、前記第7配線、前記第9配線、前記第11配線は、前記第1延在方向と交差する第2延在方向に沿って延びる、請求項4記載の磁気デバイス。 The first wiring, the third wiring, the fifth wiring, the eighth wiring, and the tenth wiring extend along the first extending direction.
The second wiring, the fourth wiring, the sixth wiring, the seventh wiring, the ninth wiring, and the eleventh wiring extend along a second extending direction intersecting with the first extending direction. The magnetic device according to claim 4. - 第1素子と、
第2素子と、
第1端、第1他端及び第1ゲートを含む第1トランジスタと、
第2端、第2他端及び第2ゲートを含む第2トランジスタと、
第1~第7配線と、
を備え、
前記第1素子及び前記第2素子のそれぞれは、第1導電部材、第1積層体及び第1ダイオードを含み、
前記第1導電部材は、第1部分と、第2部分と、第3部分と、を含み、前記第1部分と前記第2部分との間に前記第3部分があり、
前記第1積層体は、第1磁性層と、前記第3部分と前記第1磁性層との間に設けられた第1対向磁性層と、を含み、
前記第1ダイオードのアノード及びカソードの一方は、前記第1磁性層と電気的に接続され、
前記第1他端は、前記第1素子の前記第1導電部材の前記第1部分と電気的に接続され、
前記第2他端は、前記第2素子の前記第1導電部材の前記第1部分と電気的に接続され、
前記第1配線は、前記第1素子の前記第1導電部材の前記第2部分、及び、前記第2素子の前記第1導電部材の前記第2部分と電気的に接続され、
前記第2配線は、前記第1ゲートと電気的に接続され、
前記第3配線は、前記第1端と電気的に接続され、
前記第4配線は、前記第1素子の前記第1ダイオードの前記アノード及び前記カソードの他方と電気的に接続され、
前記第5配線は、前記第2ゲートと電気的に接続され、
前記第6配線は、前記第2端と電気的に接続され、
前記第7配線は、前記第2素子の前記第1ダイオードの前記アノード及び前記カソードの他方と電気的に接続された、磁気デバイス。 With the first element
With the second element
A first transistor including a first end, a first other end, and a first gate,
A second transistor including a second end, a second other end, and a second gate,
1st to 7th wiring and
With
Each of the first element and the second element includes a first conductive member, a first laminate, and a first diode.
The first conductive member includes a first portion, a second portion, and a third portion, and the third portion is located between the first portion and the second portion.
The first laminated body includes a first magnetic layer and a first opposed magnetic layer provided between the third portion and the first magnetic layer.
One of the anode and cathode of the first diode is electrically connected to the first magnetic layer.
The first other end is electrically connected to the first portion of the first conductive member of the first element.
The second other end is electrically connected to the first portion of the first conductive member of the second element.
The first wiring is electrically connected to the second part of the first conductive member of the first element and the second part of the first conductive member of the second element.
The second wiring is electrically connected to the first gate and is connected to the first gate.
The third wiring is electrically connected to the first end.
The fourth wiring is electrically connected to the anode and the other of the cathode of the first diode of the first element.
The fifth wiring is electrically connected to the second gate and is connected to the second gate.
The sixth wiring is electrically connected to the second end and is connected to the second end.
The seventh wiring is a magnetic device electrically connected to the anode of the first diode of the second element and the other of the cathode. - 前記第1配線、前記第3配線及び前記第6配線は、第1延在方向に沿って延び、
前記第2配線、前記第4配線、前記第5配線及び前記第7配線は、前記第1延在方向と交差する第2延在方向に沿って延びる、請求項8記載の磁気デバイス。 The first wiring, the third wiring, and the sixth wiring extend along the first extending direction.
The magnetic device according to claim 8, wherein the second wiring, the fourth wiring, the fifth wiring, and the seventh wiring extend along a second extending direction intersecting with the first extending direction. - 第3素子と、
第4素子と、
第3端、第3他端及び第3ゲートを含む第3トランジスタと、
第2端、第2他端及び第2ゲートを含む第4トランジスタと、
第8~第10配線と、
をさらに備え、
前記第3素子及び前記第4素子のそれぞれは、前記第1導電部材、前記第1積層体及び前記第1ダイオードを含み、
前記第3他端は、前記第3素子の前記第1導電部材の前記第1部分と電気的に接続され、
前記第4他端は、前記第4素子の前記第1導電部材の前記第1部分と電気的に接続され、
前記第2配線は、前記第3ゲートとさらに電気的に接続され、
前記第3配線は、前記第3端とさらに電気的に接続され、
前記第5配線は、前記第4ゲートとさらに電気的に接続され、
前記第6配線は、前記第4端とさらに電気的に接続され、
前記第8配線は、前記第3素子の前記第1導電部材の前記第2部分、及び、前記第4素子の前記第1導電部材の前記第2部分と電気的に接続され、
前記第9配線は、前記第3素子の前記第1ダイオードの前記アノード及び前記カソードの他方と電気的に接続され、
前記第10配線は、前記第4素子の前記第1ダイオードの前記アノード及び前記カソードの他方と電気的に接続された、請求項8記載の磁気デバイス。 With the third element
With the 4th element
A third transistor including a third end, a third other end, and a third gate,
A fourth transistor including a second end, a second other end, and a second gate,
8th to 10th wiring and
With more
Each of the third element and the fourth element includes the first conductive member, the first laminate, and the first diode.
The third other end is electrically connected to the first portion of the first conductive member of the third element.
The fourth other end is electrically connected to the first portion of the first conductive member of the fourth element.
The second wiring is further electrically connected to the third gate.
The third wiring is further electrically connected to the third end.
The fifth wiring is further electrically connected to the fourth gate.
The sixth wiring is further electrically connected to the fourth end.
The eighth wiring is electrically connected to the second part of the first conductive member of the third element and the second part of the first conductive member of the fourth element.
The ninth wiring is electrically connected to the anode and the other of the cathode of the first diode of the third element.
The magnetic device according to claim 8, wherein the tenth wiring is electrically connected to the anode of the first diode of the fourth element and the other of the cathode. - 前記第1配線、前記第3配線、前記第6配線及び前記第8配線は、第1延在方向に沿って延び、
前記第2配線、前記第4配線、前記第5配線、前記第7配線、前記第9配線及び前記第10配線は、前記第1延在方向と交差する第2延在方向に沿って延びる、請求項10記載の磁気デバイス。 The first wiring, the third wiring, the sixth wiring, and the eighth wiring extend along the first extending direction.
The second wiring, the fourth wiring, the fifth wiring, the seventh wiring, the ninth wiring, and the tenth wiring extend along a second extending direction intersecting with the first extending direction. The magnetic device according to claim 10. - 第1導電部材と第1積層体とを含む第1素子であって、前記第1導電部材は、第1部分と、第2部分と、前記第1部分と前記第2部分との間の第3部分と、を含み、前記第1積層体は、第1磁性層と、前記第3部分と前記第1磁性層との間に設けられた第1対向磁性層と、を含む、前記第1素子と、
第1端、第1他端及び第1ゲートを含む第1導電形の第1トランジスタと、
第2端、第2他端及び第2ゲートを含む第2導電形の第2トランジスタと、
第1配線と、
第2配線と、
第3配線と、
を備え、
前記第1他端は、前記第1部分と電気的に接続され、
前記第2他端は、前記第1磁性層と電気的に接続され、
前記第1配線は、前記第2部分と電気的に接続され、
前記第2配線は、前記第1ゲート及び第2ゲートと電気的に接続され、
前記第3配線は、前記第1端及び前記第2端と電気的に接続された、磁気デバイス。 A first element including a first conductive member and a first laminated body, wherein the first conductive member is a first portion between a first portion, a second portion, and the first portion and the second portion. The first laminated body includes a first magnetic layer and a first opposed magnetic layer provided between the third portion and the first magnetic layer. With the element
A first conductive type first transistor including a first end, a first other end, and a first gate,
A second conductive type second transistor including a second end, a second other end, and a second gate,
1st wiring and
2nd wiring and
3rd wiring and
With
The first other end is electrically connected to the first portion.
The second other end is electrically connected to the first magnetic layer.
The first wiring is electrically connected to the second portion and is connected to the second portion.
The second wiring is electrically connected to the first gate and the second gate, and is connected to the first gate and the second gate.
The third wiring is a magnetic device electrically connected to the first end and the second end. - 制御部をさらに備え、
前記制御部は、前記第1配線、前記第2配線及び前記第3配線と電気的に接続され、
前記制御部は、第1書き込み動作と第1読み出し動作とを実施可能であり、
前記第1書き込み動作において、前記制御部は、前記第2配線を選択状態として前記第1トランジスタを介して前記第1部分と前記第2部分との間に電流を供給し、
前記第1読み出し動作において、前記制御部は、前記第2配線を非選択状態として前記第2トランジスタを介して前記第1積層体の電気抵抗に対応する値を検出する、請求項12記載の磁気デバイス。 With more control
The control unit is electrically connected to the first wiring, the second wiring, and the third wiring.
The control unit can perform a first write operation and a first read operation.
In the first writing operation, the control unit supplies a current between the first portion and the second portion via the first transistor with the second wiring selected.
The magnetism according to claim 12, wherein in the first read operation, the control unit detects a value corresponding to the electric resistance of the first laminated body via the second transistor with the second wiring in a non-selected state. device. - 第3端、第3他端及び第3ゲートを含む前記第1導電形の第3トランジスタと、
第4端、第4他端及び第4ゲートを含む前記第2導電形の第4トランジスタと、
第4配線と、
をさらに備え、
前記第1素子は、第2積層体をさらに含み、
前記第1導電部材は、第4部分及び第5部分を含み、前記第2部分と前記第4部分との間に前記第5部分があり、
前記第2積層体は、第2磁性層と、前記第5部分と前記第2磁性層との間に設けられた第2対向磁性層と、を含み、
前記第3他端は、前記第4部分と電気的に接続され、
前記第4他端は、前記第2磁性層と電気的に接続され、
前記第4配線は、前記第3ゲート及び第4ゲートと電気的に接続され、
前記第3配線は、前記第3端及び前記第4端と電気的に接続された、請求項12記載の磁気デバイス。 The first conductive type third transistor including the third end, the third other end, and the third gate,
The second conductive type fourth transistor including the fourth end, the fourth other end, and the fourth gate,
4th wiring and
With more
The first element further includes a second laminate.
The first conductive member includes a fourth portion and a fifth portion, and the fifth portion is located between the second portion and the fourth portion.
The second laminated body includes a second magnetic layer and a second opposed magnetic layer provided between the fifth portion and the second magnetic layer.
The third other end is electrically connected to the fourth portion.
The fourth other end is electrically connected to the second magnetic layer.
The fourth wiring is electrically connected to the third gate and the fourth gate, and is connected to the third gate and the fourth gate.
The magnetic device according to claim 12, wherein the third wiring is electrically connected to the third end and the fourth end. - 制御部をさらに備え、
前記制御部は、前記第1配線、前記第2配線、前記第3配線及び前記第4配線と電気的に接続され、
前記制御部は、第1書き込み動作、第2書き込み動作、第1読み出し動作及び第2読み出し操作を実施可能であり、
前記第1書き込み動作において、前記制御部は、前記第2配線を選択状態として前記第1トランジスタを介して前記第1部分と前記第2部分との間に電流を供給し、
前記第2書き込み動作において、前記制御部は、前記第4配線を選択状態として前記第3トランジスタを介して前記第4部分と前記第2部分との間に電流を供給し、
前記第1読み出し動作において、前記制御部は、前記第2配線を非選択状態として前記第2トランジスタを介して前記第1積層体の電気抵抗に対応する値を検出し、
前記第2読み出し動作において、前記制御部は、前記第4配線を非選択状態として前記第4トランジスタを介して前記第2積層体の電気抵抗に対応する値を検出する、請求項14記載の磁気デバイス。 With more control
The control unit is electrically connected to the first wiring, the second wiring, the third wiring, and the fourth wiring.
The control unit can perform a first write operation, a second write operation, a first read operation, and a second read operation.
In the first writing operation, the control unit supplies a current between the first portion and the second portion via the first transistor with the second wiring selected.
In the second writing operation, the control unit supplies a current between the fourth portion and the second portion via the third transistor with the fourth wiring selected.
In the first read operation, the control unit detects a value corresponding to the electric resistance of the first laminated body via the second transistor with the second wiring in a non-selected state.
The magnetism according to claim 14, wherein in the second read operation, the control unit detects a value corresponding to the electric resistance of the second laminate via the fourth transistor with the fourth wiring in a non-selected state. device. - 第1素子と、
第2素子と、
第1端、第1他端及び第1ゲートを含む第1導電形の第1トランジスタと、
第2端、第2他端及び第2ゲートを含む第2導電形の第2トランジスタと、
第3端、第3他端及び第3ゲートを含む前記第1導電形の第3トランジスタと、
第4端、第4他端及び第4ゲートを含む前記第2導電形の第4トランジスタと、
第5端、第5他端及び第5ゲートを含む前記第1導電形の第5トランジスタと、
第6端、第6他端及び第6ゲートを含む前記第1導電形の第6トランジスタと、
第1配線と、
第2配線と、
第3配線と、
第4配線と、
第5配線と、
を備え、
前記第1素子及び前記第2素子のそれぞれは、第1導電部材と第1積層体と第2積層体とを含み、
前記第1導電部材は、第1部分と、第2部分と、第3部分と、第4部分と、第5部分と、を含み、前記第1部分と前記第4部分との間に前記第2部分があり、前記第1部分と前記第2部分との間に前記第3部分があり、前記第2部分と前記第4部分との間に前記第5部分があり、
前記第1積層体は、第1磁性層と、前記第3部分と前記第1磁性層との間に設けられた第1対向磁性層と、を含み、
前記第2積層体は、第2磁性層と、前記第5部分と前記第2磁性層との間に設けられた第2対向磁性層と、を含み、
前記第1他端は、前記第1素子の前記第1導電部材の前記第1部分と電気的に接続され、
前記第2他端は、前記第1素子の前記第1磁性層及び前記第2素子の前記第1磁性層と電気的に接続され、
前記第3他端は、前記第1素子の前記第1導電部材の前記第4部分と電気的に接続され、
前記第4他端は、前記第1素子の前記第2磁性層及び前記第2素子の前記第2磁性層と電気的に接続され、
前記第5他端は、前記第2素子の前記第1導電部材の前記第1部分と電気的に接続され、
前記第6他端は、前記第2素子の前記第1導電部材の前記第4部分と電気的に接続され、
前記第1配線は、前記第1素子の前記第1導電部材の前記第2部分と電気的に接続され、
前記第2配線は、前記第1ゲート、前記第2ゲート及び前記第5ゲートと電気的に接続され、
前記第3配線は、前記第1端、前記第2端、前記第3端、前記第4端、前記第5端及び前記第6端と電気的に接続され、
前記第4配線は、前記第3ゲート、前記第4ゲート及び前記第6ゲートと電気的に接続され、
前記第5配線は、前記第2素子の前記第1導電部材の前記第2部分と電気的に接続された、磁気デバイス。 With the first element
With the second element
A first conductive type first transistor including a first end, a first other end, and a first gate,
A second conductive type second transistor including a second end, a second other end, and a second gate,
The first conductive type third transistor including the third end, the third other end, and the third gate,
The second conductive type fourth transistor including the fourth end, the fourth other end, and the fourth gate,
The first conductive type fifth transistor including the fifth end, the fifth other end, and the fifth gate,
The first conductive type sixth transistor including the sixth end, the sixth other end, and the sixth gate,
1st wiring and
2nd wiring and
3rd wiring and
4th wiring and
5th wiring and
With
Each of the first element and the second element includes a first conductive member, a first laminated body, and a second laminated body.
The first conductive member includes a first portion, a second portion, a third portion, a fourth portion, and a fifth portion, and the first portion is between the first portion and the fourth portion. There are two parts, the third part is between the first part and the second part, and the fifth part is between the second part and the fourth part.
The first laminated body includes a first magnetic layer and a first opposed magnetic layer provided between the third portion and the first magnetic layer.
The second laminated body includes a second magnetic layer and a second opposed magnetic layer provided between the fifth portion and the second magnetic layer.
The first other end is electrically connected to the first portion of the first conductive member of the first element.
The second other end is electrically connected to the first magnetic layer of the first element and the first magnetic layer of the second element.
The third other end is electrically connected to the fourth portion of the first conductive member of the first element.
The fourth other end is electrically connected to the second magnetic layer of the first element and the second magnetic layer of the second element.
The fifth other end is electrically connected to the first portion of the first conductive member of the second element.
The sixth other end is electrically connected to the fourth portion of the first conductive member of the second element.
The first wiring is electrically connected to the second portion of the first conductive member of the first element.
The second wiring is electrically connected to the first gate, the second gate, and the fifth gate.
The third wiring is electrically connected to the first end, the second end, the third end, the fourth end, the fifth end, and the sixth end.
The fourth wiring is electrically connected to the third gate, the fourth gate, and the sixth gate.
The fifth wiring is a magnetic device electrically connected to the second portion of the first conductive member of the second element. - 第3素子と、
第7端、第7他端及び第7ゲートを含む前記第1導電形の第7トランジスタと、
第8端、第8他端及び第8ゲートを含む前記第2導電形の第8トランジスタと、
第9端、第9他端及び第9ゲートを含む前記第2導電形の第9トランジスタと、
第6配線と、
第7配線と、
第8配線と、
第9配線と、
をさらに備え、
前記第3素子は、前記第1導電部材と前記第1積層体と前記第2積層体とを含み、
前記第1素子の前記第1導電部材の前記第4部分は、前記第3素子の前記第1導電部材の前記第1部分と電気的に接続され、
前記第7他端は、前記第3素子の前記第1導電部材の前記第4部分と電気的に接続され、
前記第8他端は、前記第3素子の前記第1磁性層と電気的に接続され、
前記第9他端は、前記第3素子の前記第2磁性層と電気的に接続され、
前記第6配線は、前記第8ゲートと電気的に接続され、
前記第7配線は、前記第7ゲート及び前記第9ゲートと電気的に接続され、
前記第8配線は、前記第7端、前記第8端及び前記第9端と電気的に接続され、
前記第9配線は、前記第3素子の前記第1導電部材の前記第2部分と電気的に接続された、請求項16記載の磁気デバイス。 With the third element
The first conductive type seventh transistor including the seventh end, the seventh other end, and the seventh gate,
The second conductive type eighth transistor including the eighth end, the eighth other end, and the eighth gate,
The second conductive type ninth transistor including the ninth end, the ninth other end, and the ninth gate,
6th wiring and
7th wiring and
8th wiring and
9th wiring and
With more
The third element includes the first conductive member, the first laminated body, and the second laminated body.
The fourth portion of the first conductive member of the first element is electrically connected to the first portion of the first conductive member of the third element.
The seventh other end is electrically connected to the fourth portion of the first conductive member of the third element.
The eighth other end is electrically connected to the first magnetic layer of the third element.
The ninth other end is electrically connected to the second magnetic layer of the third element.
The sixth wiring is electrically connected to the eighth gate, and is connected to the eighth gate.
The seventh wiring is electrically connected to the seventh gate and the ninth gate.
The eighth wiring is electrically connected to the seventh end, the eighth end, and the ninth end.
The magnetic device according to claim 16, wherein the ninth wiring is electrically connected to the second portion of the first conductive member of the third element. - 第1素子と、
第2素子と、
第1端、第1他端及び第1ゲートを含む第1導電形の第1トランジスタと、
第2端、第2他端及び第2ゲートを含む第2導電形の第2トランジスタと、
第3端、第3他端及び第3ゲートを含む前記第1導電形の第3トランジスタと、
第4端、第4他端及び第4ゲートを含む前記第2導電形の第4トランジスタと、
第5端、第5他端及び第5ゲートを含む前記第1導電形の第5トランジスタと、
第6端、第6他端及び第6ゲートを含む前記第2導電形の第6トランジスタと、
第7端、第7他端及び第7ゲートを含む前記第2導電形の第7トランジスタと、
第1配線と、
第2配線と、
第3配線と、
第4配線と、
第5配線と、
第6配線と、
第7配線と、
第8配線と、
を備え、
前記第1素子及び前記第2素子のそれぞれは、第1導電部材と第1積層体と第2積層体とを含み、
前記第1導電部材は、第1部分と、第2部分と、第3部分と、第4部分と、第5部分と、を含み、前記第1部分と前記第4部分との間に前記第2部分があり、前記第1部分と前記第2部分との間に前記第3部分があり、前記第2部分と前記第4部分との間に前記第5部分があり、
前記第1積層体は、第1磁性層と、前記第3部分と前記第1磁性層との間に設けられた第1対向磁性層と、を含み、
前記第2積層体は、第2磁性層と、前記第5部分と前記第2磁性層との間に設けられた第2対向磁性層と、を含み、
前記第1素子の前記第1導電部材の前記第4部分は、前記第2素子の前記第1導電部材の前記第1部分と電気的に接続され、
前記第1他端は、前記第1素子の前記第1導電部材の前記第1部分と電気的に接続され、
前記第2他端は、前記第1素子の前記第1磁性層と電気的に接続され、
前記第3他端は、前記第1素子の前記第1導電部材の前記第4部分及び前記第2素子の前記第1導電部材の前記第1部分と電気的に接続され、
前記第4他端は、前記第1素子の前記第2磁性層と電気的に接続され、
前記第5他端は、前記第2素子の前記第1導電部材の前記第4部分と電気的に接続され、
前記第6他端は、前記第2素子の前記第1磁性層と電気的に接続され、
前記第7他端は、前記第2素子の前記第2磁性層と電気的に接続され、
前記第1配線は、前記第1素子の前記第1導電部材の前記第2部分と電気的に接続され、
前記第2配線は、前記第1ゲート及び前記第2ゲートと電気的に接続され、
前記第3配線は、前記第1端、前記第2端、前記第3端及び前記第4端と電気的に接続され、
前記第4配線は、前記第3ゲート及び前記第4ゲートと電気的に接続され、
前記第5配線は、前記第2素子の前記第1導電部材の前記第2部分と電気的に接続され、
前記第6配線は、前記第6ゲートと電気的に接続され、
前記第7配線は、前記第5ゲート及び前記第7ゲートと電気的に接続され、
前記第8配線は、前記第5端、前記第6端及び前記第7端と電気的に接続された、磁気デバイス。 With the first element
With the second element
A first conductive type first transistor including a first end, a first other end, and a first gate,
A second conductive type second transistor including a second end, a second other end, and a second gate,
The first conductive type third transistor including the third end, the third other end, and the third gate,
The second conductive type fourth transistor including the fourth end, the fourth other end, and the fourth gate,
The first conductive type fifth transistor including the fifth end, the fifth other end, and the fifth gate,
The second conductive type sixth transistor including the sixth end, the sixth other end, and the sixth gate,
The second conductive type seventh transistor including the seventh end, the seventh other end, and the seventh gate,
1st wiring and
2nd wiring and
3rd wiring and
4th wiring and
5th wiring and
6th wiring and
7th wiring and
8th wiring and
With
Each of the first element and the second element includes a first conductive member, a first laminated body, and a second laminated body.
The first conductive member includes a first portion, a second portion, a third portion, a fourth portion, and a fifth portion, and the first portion is between the first portion and the fourth portion. There are two parts, the third part is between the first part and the second part, and the fifth part is between the second part and the fourth part.
The first laminated body includes a first magnetic layer and a first opposed magnetic layer provided between the third portion and the first magnetic layer.
The second laminated body includes a second magnetic layer and a second opposed magnetic layer provided between the fifth portion and the second magnetic layer.
The fourth portion of the first conductive member of the first element is electrically connected to the first portion of the first conductive member of the second element.
The first other end is electrically connected to the first portion of the first conductive member of the first element.
The second other end is electrically connected to the first magnetic layer of the first element.
The third other end is electrically connected to the fourth portion of the first conductive member of the first element and the first portion of the first conductive member of the second element.
The fourth other end is electrically connected to the second magnetic layer of the first element.
The fifth other end is electrically connected to the fourth portion of the first conductive member of the second element.
The sixth other end is electrically connected to the first magnetic layer of the second element.
The seventh other end is electrically connected to the second magnetic layer of the second element.
The first wiring is electrically connected to the second portion of the first conductive member of the first element.
The second wiring is electrically connected to the first gate and the second gate.
The third wiring is electrically connected to the first end, the second end, the third end, and the fourth end.
The fourth wiring is electrically connected to the third gate and the fourth gate.
The fifth wiring is electrically connected to the second portion of the first conductive member of the second element.
The sixth wiring is electrically connected to the sixth gate and is connected to the sixth gate.
The seventh wiring is electrically connected to the fifth gate and the seventh gate.
The eighth wiring is a magnetic device electrically connected to the fifth end, the sixth end, and the seventh end. - 第1素子と、
第2素子と、
第1端、第1他端及び第1ゲートを含む第1導電形の第1トランジスタと、
第2端、第2他端及び第2ゲートを含む第2導電形の第2トランジスタと、
第1配線と、
第2配線と、
第3配線と、
第4配線と、
を備え、
前記第1素子及び前記第2素子のそれぞれは、第1導電部材、第1積層体及び第1ダイオードを含み、
前記第1導電部材は、第1部分と、第2部分と、第3部分と、を含み、前記第1部分と前記第2部分との間に前記第3部分があり、
前記第1積層体は、第1磁性層と、前記第3部分と前記第1磁性層との間に設けられた第1対向磁性層と、を含み、
前記第1ダイオードのアノード及びカソードの一方は、前記第1磁性層と電気的に接続され、
前記第1他端は、前記第1素子の前記第1導電部材の前記第1部分と電気的に接続され、
前記第2他端は、前記第2素子の前記第1導電部材の前記第1部分と電気的に接続され、
前記第1配線は、前記第1素子の前記第1導電部材の前記第2部分、及び、前記第2素子の前記第1導電部材の前記第2部分と電気的に接続され、
前記第2配線は、前記第1ゲート及び前記第2ゲートと電気的に接続され、
前記第3配線は、前記第1端及び前記第2端と電気的に接続され、
前記第4配線は、前記第1素子の前記第1ダイオードの前記アノード及び前記カソードの他方、及び、前記第2素子の前記第1ダイオードの前記アノード及び前記カソードの他方と電気的に接続された、磁気デバイス。 With the first element
With the second element
A first conductive type first transistor including a first end, a first other end, and a first gate,
A second conductive type second transistor including a second end, a second other end, and a second gate,
1st wiring and
2nd wiring and
3rd wiring and
4th wiring and
With
Each of the first element and the second element includes a first conductive member, a first laminate, and a first diode.
The first conductive member includes a first portion, a second portion, and a third portion, and the third portion is located between the first portion and the second portion.
The first laminated body includes a first magnetic layer and a first opposed magnetic layer provided between the third portion and the first magnetic layer.
One of the anode and cathode of the first diode is electrically connected to the first magnetic layer.
The first other end is electrically connected to the first portion of the first conductive member of the first element.
The second other end is electrically connected to the first portion of the first conductive member of the second element.
The first wiring is electrically connected to the second part of the first conductive member of the first element and the second part of the first conductive member of the second element.
The second wiring is electrically connected to the first gate and the second gate.
The third wiring is electrically connected to the first end and the second end.
The fourth wiring was electrically connected to the other of the anode and the cathode of the first diode of the first element and the other of the anode and the cathode of the first diode of the second element. , Magnetic device. - 第1素子と、
第2素子と、
第1端、第1他端及び第1ゲートを含む第1導電形の第1トランジスタと、
第2端、第2他端及び第2ゲートを含む第2導電形の第2トランジスタと、
第1配線と、
第2配線と、
第3配線と、
第4配線と、
を備え、
前記第1素子及び前記第2素子のそれぞれは、第1導電部材、第1積層体及び第1ダイオードを含み、
前記第1導電部材は、第1部分と、第2部分と、第3部分と、を含み、前記第1部分と前記第2部分との間に前記第3部分があり、
前記第1積層体は、第1磁性層と、前記第3部分と前記第1磁性層との間に設けられた第1対向磁性層と、を含み、
前記第1ダイオードのアノード及びカソードの一方は、前記第1磁性層と電気的に接続され、
前記第1他端は、前記第1素子の前記第1導電部材の前記第1部分、及び、前記第2素子の前記第1ダイオードの前記アノード及び前記カソードの他方と電気的に接続され、
前記第2他端は、前記第1素子の前記第1ダイオードの前記アノード及び前記カソードの他方、及び、前記第2素子の前記第1導電部材の前記第1部分と電気的に接続され、
前記第1配線は、前記第1素子の前記第1導電部材の前記第2部分と電気的に接続され、
前記第2配線は、前記第1ゲート及び前記第2ゲートと電気的に接続され、
前記第3配線は、前記第1端及び前記第2端と電気的に接続され、
前記第4配線は、前記第2素子の前記第1導電部材の前記第2部分と電気的に接続された、磁気デバイス。 With the first element
With the second element
A first conductive type first transistor including a first end, a first other end, and a first gate,
A second conductive type second transistor including a second end, a second other end, and a second gate,
1st wiring and
2nd wiring and
3rd wiring and
4th wiring and
With
Each of the first element and the second element includes a first conductive member, a first laminate, and a first diode.
The first conductive member includes a first portion, a second portion, and a third portion, and the third portion is located between the first portion and the second portion.
The first laminated body includes a first magnetic layer and a first opposed magnetic layer provided between the third portion and the first magnetic layer.
One of the anode and cathode of the first diode is electrically connected to the first magnetic layer.
The first other end is electrically connected to the first portion of the first conductive member of the first element and the anode and the other of the cathode of the first diode of the second element.
The second other end is electrically connected to the other of the anode and the cathode of the first diode of the first element and the first part of the first conductive member of the second element.
The first wiring is electrically connected to the second portion of the first conductive member of the first element.
The second wiring is electrically connected to the first gate and the second gate.
The third wiring is electrically connected to the first end and the second end.
The fourth wiring is a magnetic device electrically connected to the second portion of the first conductive member of the second element.
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202180008222.6A CN114930531A (en) | 2020-01-21 | 2021-01-14 | Magnetic device |
JP2021573109A JP7311181B2 (en) | 2020-01-21 | 2021-01-14 | magnetic device |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2020007550 | 2020-01-21 | ||
JP2020-007550 | 2020-01-21 | ||
JP2020-081960 | 2020-05-07 | ||
JP2020081960 | 2020-05-07 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2021149586A1 true WO2021149586A1 (en) | 2021-07-29 |
Family
ID=76992320
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2021/001081 WO2021149586A1 (en) | 2020-01-21 | 2021-01-14 | Magnetic device |
Country Status (3)
Country | Link |
---|---|
JP (1) | JP7311181B2 (en) |
CN (1) | CN114930531A (en) |
WO (1) | WO2021149586A1 (en) |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013243336A (en) * | 2012-01-30 | 2013-12-05 | Quantu Mag Consultancy Co Ltd | Mtj element, manufacturing method of the same and mram device |
JP2017059634A (en) * | 2015-09-15 | 2017-03-23 | 株式会社東芝 | Magnetic memory |
JP2017168658A (en) * | 2016-03-16 | 2017-09-21 | 株式会社東芝 | Memory cell and magnetic memory |
WO2017159432A1 (en) * | 2016-03-14 | 2017-09-21 | Tdk株式会社 | Magnetic memory |
JP2019004071A (en) * | 2017-06-16 | 2019-01-10 | 株式会社東芝 | Magnetic storage device |
-
2021
- 2021-01-14 WO PCT/JP2021/001081 patent/WO2021149586A1/en active Application Filing
- 2021-01-14 CN CN202180008222.6A patent/CN114930531A/en active Pending
- 2021-01-14 JP JP2021573109A patent/JP7311181B2/en active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013243336A (en) * | 2012-01-30 | 2013-12-05 | Quantu Mag Consultancy Co Ltd | Mtj element, manufacturing method of the same and mram device |
JP2017059634A (en) * | 2015-09-15 | 2017-03-23 | 株式会社東芝 | Magnetic memory |
WO2017159432A1 (en) * | 2016-03-14 | 2017-09-21 | Tdk株式会社 | Magnetic memory |
JP2017168658A (en) * | 2016-03-16 | 2017-09-21 | 株式会社東芝 | Memory cell and magnetic memory |
JP2019004071A (en) * | 2017-06-16 | 2019-01-10 | 株式会社東芝 | Magnetic storage device |
Also Published As
Publication number | Publication date |
---|---|
JPWO2021149586A1 (en) | 2021-07-29 |
JP7311181B2 (en) | 2023-07-19 |
CN114930531A (en) | 2022-08-19 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN1215464C (en) | Magnetic recorder and mfg. method thereof | |
JP5702177B2 (en) | Semiconductor device | |
US10361358B2 (en) | Spin orbit torque (SOT) MRAM having a source line connected to a spin orbit conductive layer and arranged above a magnetoresistive element | |
US6781874B2 (en) | Thin film magnetic memory device including memory cells having a magnetic tunnel junction | |
US7227774B2 (en) | MRAM integrated circuits, MRAM circuits, and systems for testing MRAM integrated circuits | |
US7009873B2 (en) | Magnetic random access memory | |
US6946712B2 (en) | Magnetic memory device using SOI substrate | |
TWI571969B (en) | Sram cell and memory circuit | |
JP2004153070A (en) | Magnetic random access memory and its manufacturing method | |
JP2019161102A (en) | Magnetic storage device | |
JP2009252878A (en) | Magnetic memory device | |
US6594176B2 (en) | Current source and drain arrangement for magnetoresistive memories (MRAMs) | |
WO2021149586A1 (en) | Magnetic device | |
JP6970654B2 (en) | Magnetic storage device | |
JP6553224B1 (en) | Magnetic storage | |
WO2019092816A1 (en) | Tunnel magnetoresistive effect element, magnetic memory, and built-in memory | |
US10867649B2 (en) | Magnetic memory device | |
JP4729836B2 (en) | Magnetic storage cell, magnetic memory device, and method of manufacturing magnetic memory device | |
US7180773B2 (en) | Magnetic memory device | |
JP2018022795A (en) | Magnetic memory | |
US7470964B2 (en) | Magnetic memory and manufacturing method thereof | |
JP4868431B2 (en) | Magnetic storage cell and magnetic memory device | |
WO2022095033A1 (en) | Spin orbit torque magnetic random access memory, manufacturing method therefor, and memory device | |
JP2008218736A (en) | Magnetic memory device | |
JP2021114583A (en) | Magnetic device |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 21744521 Country of ref document: EP Kind code of ref document: A1 |
|
ENP | Entry into the national phase |
Ref document number: 2021573109 Country of ref document: JP Kind code of ref document: A |
|
NENP | Non-entry into the national phase |
Ref country code: DE |
|
122 | Ep: pct application non-entry in european phase |
Ref document number: 21744521 Country of ref document: EP Kind code of ref document: A1 |