WO2021144835A1

WO2021144835A1 - Display device

Info

Publication number: WO2021144835A1
Application number: PCT/JP2020/000850
Authority: WO
Inventors: 貴翁斉藤; 庸輔神崎; 雅貴山中; 屹孫; 昌彦三輪
Original assignee: シャープ株式会社
Priority date: 2020-01-14
Filing date: 2020-01-14
Publication date: 2021-07-22

Abstract

In the present invention, a TFT layer (20) comprising a planarized film (19) is provided on a resin substrate layer (10); an organic EL element layer (30) is provided on the TFT layer (20), the organic EL element layer having layered therein, in this order, a first electrode (21), an edge cover (22), an organic EL layer (23), and a second electrode (24); an opening (42) is formed in the edge cover (22), at a position corresponding to the position of the first electrode (21); a support part (S) is provided in a layer below the first electrode (21), along a peripheral edge (21b) of the first electrode (21); and at least a portion of an upper surface (Sa) of the support part (S) is at a higher position than an upper surface (19a) of the planarized film (19) that overlaps in a plan view with the opening (42) in the edge cover (22).

Description

Display device

The present invention relates to a display device.

In recent years, as a display device that replaces a liquid crystal display device, a self-luminous organic EL display device that uses an organic electroluminescence (hereinafter, also referred to as “EL”) element has attracted attention. This organic EL display device is, for example, a thin film transistor in which a flexible resin substrate and a semiconductor layer, an inorganic insulating film, a wiring layer, and a flattening film are sequentially laminated on the resin substrate (hereinafter referred to as “TFT””. It includes a layer (also referred to as) and an organic EL element layer in which a plurality of organic EL elements constituting a display region are arranged.

For example, Patent Document 1 discloses an organic EL display device in which a plurality of first electrodes, an organic EL layer, and an edge cover are formed as an organic EL element layer, and a second electrode is formed so as to cover these. ing.

Japanese Unexamined Patent Publication No. 2011-014504

By the way, in the organic EL display device, in the step of forming the organic EL element layer, finally, the edge cover (hereinafter, also referred to as “bank”) of the first electrode is formed in a grid pattern over the entire display region. As a method of forming a bank, for example, a bank material is applied on the first electrode, patterning is performed, and then bank baking is performed. During this bank baking, the bank material is thermally shrunk, so that the bank hole (opening of the edge cover, opening for light emission) on the first electrode expands, and at least a part of the peripheral end of the bank hole presses the first electrode. It may be missed.

In this case, the flattening film (hereinafter, also referred to as “base flattening film”) which is under the first electrode and the bank and is made of the same material as the bank material is compared with the first electrode made of the metal layer. As a result, the bondability with the bank material is high, so that the shrinkage stress of the bank material is applied to the substrate flattening film. As a result, the shrinkage rate of the bank material changes, causing the inconvenience of cracking the base flattening film. In addition, there is an inconvenience that the function of the edge cover is lost. Due to the occurrence of these inconveniences, the reliability of the display device may decrease.

The present invention has been made in view of this point, and an object of the present invention is to suppress the occurrence of cracks in the flattening film under the edge cover in the display area.

In order to achieve the above object, the display device according to the present invention includes a resin substrate layer, a semiconductor layer, at least one first inorganic insulating film, a wiring layer, and a flattening film provided on the resin substrate layer. A plurality of first electrodes, a common edge cover, a plurality of functional layers, and a common second electrode corresponding to a plurality of thin film transistor layers stacked in order and a plurality of sub-pixels provided on the thin film transistor layer and constituting a display area. A display device including a light emitting element layer in which electrodes are sequentially laminated, and a plurality of openings are formed in the edge cover corresponding to the positions of the plurality of first electrodes, and each of the first electrodes is formed. A support portion is provided in the lower layer along the peripheral end portion of the first electrode, and at least a part of the upper surface of the support portion is from the upper surface of the flattening film that overlaps with the opening of the edge cover in a plan view. Is also characterized by being in a high position.

According to the present invention, a support portion is provided in the lower layer of each first electrode along the peripheral end portion of the first electrode, and at least a part of the upper surface of the support portion is superimposed on the opening of the edge cover in a plan view. Since it is located higher than the upper surface of the flattening film, it is possible to suppress the occurrence of cracks in the flattening film under the edge cover in the display area.

FIG. 1 is a plan view showing a schematic configuration of an organic EL display device according to a first embodiment of the present invention. FIG. 2 is a plan view of a display area of the organic EL display device according to the first embodiment of the present invention. FIG. 3 is a cross-sectional view of a display area of the organic EL display device according to the first embodiment of the present invention. FIG. 4 is an equivalent circuit diagram of a TFT layer constituting the organic EL display device according to the first embodiment of the present invention. FIG. 5 is a cross-sectional view of an organic EL layer constituting the organic EL display device according to the first embodiment of the present invention. FIG. 6 is an enlarged plan view of a display area of the organic EL display device according to the first embodiment of the present invention. FIG. 7 is a cross-sectional view showing a modified example of the display area of the organic EL display device according to the first embodiment of the present invention, and is a view corresponding to FIG. FIG. 8 is a cross-sectional view of a display area of the organic EL display device according to the second embodiment of the present invention, and is a view corresponding to FIG. FIG. 9 is an enlarged plan view of a display area of the organic EL display device according to the second embodiment of the present invention, and is a view corresponding to FIG. FIG. 10 is a cross-sectional view showing a modified example of the display area of the organic EL display device according to the second embodiment of the present invention, and is a view corresponding to FIG.

Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. The present invention is not limited to the following embodiments.

<< First Embodiment >>
1 to 7 show a first embodiment of the display device according to the present invention. In each of the following embodiments, an organic EL display device provided with an organic EL element will be exemplified as a display device provided with a light emitting element. Here, FIG. 1 is a plan view showing a schematic configuration of the organic EL display device 50a of the present embodiment. Further, FIG. 2 is a plan view of the display area D of the organic EL display device 50a. Further, FIG. 3 is a cross-sectional view of the display area D of the organic EL display device 50a. Further, FIG. 4 is an equivalent circuit diagram of the TFT layer 20 constituting the organic EL display device 50a. Further, FIG. 5 is a cross-sectional view of the organic EL layer 23 constituting the organic EL display device 50a. Further, FIG. 6 is an enlarged plan view of the display area D of the organic EL display device 50a. In the enlarged plan view of FIG. 6, the edge cover 22, the organic EL layer 23, the second electrode 24, and the sealing layer 35 shown in FIG. 3 are omitted. Further, FIG. 7 is a cross-sectional view showing a modified example of the organic EL display device 50a, and is a view corresponding to FIG.

As shown in FIG. 1, the organic EL display device 50a includes, for example, a rectangular display area D for displaying an image and a frame area F provided around the display area D in a rectangular frame shape. ing. In the present embodiment, the rectangular display area D is illustrated, but the rectangular shape includes, for example, a shape in which the sides are arcuate, a shape in which the corners are arcuate, and a part of the sides. A substantially rectangular shape such as a shape with a notch is also included.

As shown in FIG. 2, a plurality of sub-pixels P are arranged in a matrix in the display area D. Further, in the display area D, as shown in FIG. 2, for example, a sub-pixel P having a red light emitting region Lr for displaying red, and a sub pixel P having a green light emitting region Lg for displaying green, And sub-pixels P having a blue light emitting region Lb for displaying blue are provided so as to be adjacent to each other. In the display area D, for example, one pixel is composed of three adjacent sub-pixels P having a red light emitting region Lr, a green light emitting region Lg, and a blue light emitting region Lb.

At the left end of the frame area F in FIG. 1, the terminal portion T is provided so as to extend in one direction (vertical direction in the figure). Further, in the frame area F, as shown in FIG. 1, between the display area D and the terminal portion T, the frame region F can be bent (in a U shape) at, for example, 180 ° with the vertical direction in the drawing as the bending axis. The bent portion B is provided so as to extend in one direction (vertical direction in the figure).

As shown in FIG. 3, the organic EL display device 50a is provided as a resin substrate layer 10, a TFT layer 20 provided on the resin substrate layer 10, and a light emitting element layer forming a display region D on the TFT layer 20. The organic EL element layer 30 is provided, and the sealing layer 35 provided on the organic EL element layer 30 is provided.

The resin substrate layer 10 is made of, for example, polyimide or the like.

As shown in FIG. 3, the TFT layer 20 is sequentially provided on the resin substrate layer 10 as

semiconductor layers

12a and 12b and at least one first inorganic insulating film (hereinafter, also simply referred to as “first inorganic insulating film”). The base coat film 11, the gate insulating film 13, the first interlayer insulating film 15, the second interlayer insulating film 17, the wiring layer described later, and the flattening film 19 are laminated. Specifically, as shown in FIG. 3, the TFT layer 20 is provided as a base coat film 11 provided on the resin substrate layer 10 and as a pixel circuit (see FIG. 4) for each sub-pixel P on the base coat film 11. The first TFT 9a, the second TFT 9b and the capacitor 9c are provided, and the flattening film 19 for the TFT provided on each of the first TFT 9a, each second TFT 9b and each capacitor 9c is provided. Here, in the TFT layer 20, a plurality of pixel circuits are arranged in a matrix corresponding to the plurality of sub-pixels P. Further, as shown in FIGS. 2 and 4, the TFT layer 20 is provided with a plurality of gate wires 14 (wiring layers) so as to extend in parallel with each other in the horizontal direction in the drawing. Further, as shown in FIGS. 2 and 4, the TFT layer 20 is provided with a plurality of source lines 18f (wiring layers) so as to extend in parallel with each other in the vertical direction in the drawing. Further, as shown in FIGS. 2 and 4, the TFT layer 20 is provided with a plurality of power supply lines 18 g (wiring layers) so as to extend in parallel with each other in the vertical direction in the drawing. As shown in FIG. 3, each power supply line 18g is provided so as to be adjacent to each source line 18f.

The base coat film 11, the gate insulating film 13, the first interlayer insulating film 15, and the second interlayer insulating film 17 constituting the first inorganic insulating film are simply inorganic insulating films such as silicon nitride, silicon oxide, and silicon oxynitride. It is composed of a layered film or a laminated film.

As shown in FIG. 4, the first TFT 9a is electrically connected to the corresponding gate line 14 and source line 18f in each sub-pixel P. Further, as shown in FIG. 3, the first TFT 9a includes a semiconductor layer 12a, a gate insulating film 13, a gate electrode 14a (wiring layer), a first interlayer insulating film 15, and a second interlayer insulating, which are sequentially provided on the base coat film 11. A film 17 and a source electrode 18a and a drain electrode 18b (wiring layer) are provided. Here, the semiconductor layer 12a is provided in an island shape on the base coat film 11 by, for example, a low-temperature polysilicon film, an In—Ga—Zn—O-based oxide semiconductor film, or the like, as shown in FIG. It has a region, a source region and a drain region. Further, as shown in FIG. 3, the gate insulating film 13 is provided so as to cover the semiconductor layer 12a. Further, as shown in FIG. 3, the gate electrode 14a is provided on the gate insulating film 13 so as to overlap the channel region of the semiconductor layer 12a. Further, the first interlayer insulating film 15 and the second interlayer insulating film 17 are provided in order so as to cover the gate electrode 14a as shown in FIG. Further, as shown in FIG. 3, the source electrode 18a and the drain electrode 18b are provided on the second interlayer insulating film 17 so as to be separated from each other. Further, as shown in FIG. 3, the source electrode 18a and the drain electrode 18b are provided through the contact holes formed in the laminated film of the gate insulating film 13, the first interlayer insulating film 15 and the second interlayer insulating film 17. It is electrically connected to the source region and the drain region of the semiconductor layer 12a, respectively.

As shown in FIG. 4, the second TFT 9b is electrically connected to the corresponding first TFT 9a and the power supply line 18g in each sub-pixel P. Further, as shown in FIG. 3, the second TFT 9b includes a semiconductor layer 12b, a gate insulating film 13, a gate electrode 14b (wiring layer), a first interlayer insulating film 15, and a second interlayer insulating, which are sequentially provided on the base coat film 11. A film 17 and a source electrode 18c and a drain electrode 18d (wiring layer) are provided. Here, the semiconductor layer 12b is provided in an island shape on the base coat film 11 by, for example, a low-temperature polysilicon film, an In—Ga—Zn—O-based oxide semiconductor film, or the like, as shown in FIG. It has a region, a source region and a drain region. Further, as shown in FIG. 3, the gate insulating film 13 is provided so as to cover the semiconductor layer 12b. Further, as shown in FIG. 3, the gate electrode 14b is provided on the gate insulating film 13 so as to overlap the channel region of the semiconductor layer 12b. Further, the first interlayer insulating film 15 and the second interlayer insulating film 17 are provided in order so as to cover the gate electrode 14b as shown in FIG. Further, as shown in FIG. 3, the source electrode 18c and the drain electrode 18d are provided on the second interlayer insulating film 17 so as to be separated from each other. Further, as shown in FIG. 3, the source electrode 18c and the drain electrode 18d pass through the contact holes formed in the laminated film of the gate insulating film 13, the first interlayer insulating film 15 and the second interlayer insulating film 17. It is electrically connected to the source region and the drain region of the semiconductor layer 12b, respectively.

In the present embodiment, the top gate type first TFT 9a and the second TFT 9b are illustrated, but the first TFT 9a and the second TFT 9b may be a bottom gate type TFT.

As shown in FIG. 4, the capacitor 9c is electrically connected to the corresponding first TFT 9a and the power supply line 18g in each sub-pixel P. Here, as shown in FIG. 3, the capacitor 9c is provided so as to cover the lower conductive layer 14c (wiring layer) formed in the same layer as the

gate electrodes

14a and 14b and the lower conductive layer 14c. A first interlayer insulating film 15 and an upper conductive layer 16 (wiring layer) provided on the first interlayer insulating film 15 so as to overlap the lower conductive layer 14c are provided. As shown in FIG. 3, the upper conductive layer 16 is electrically connected to the power supply line 18g via a contact hole formed in the second interlayer insulating film 17.

Each of the above-mentioned wiring layers is, for example, a metal single layer film such as molybdenum (Mo), titanium (Ti), aluminum (Al), copper (Cu), tungsten (W), or Mo (upper layer) / Al (middle layer). It is formed of a metal laminated film such as / Mo (lower layer), Ti / Al / Ti, Al (upper layer) / Ti (lower layer), Cu / Mo, and Cu / Ti.

The flattening film 19 has a flat surface in the display area D. The flattening film 19 is made of, for example, an organic resin material such as a polyimide resin or an acrylic resin. Further, the flattening film 19 may be composed of a resin layer made of a positive photosensitive resin such as a polyimide resin, an acrylic resin, a polysiloxane resin, or a novolak resin.

As shown in FIG. 3, the organic EL element layer 30 includes a plurality of organic EL elements 25 so as to be arranged in a matrix on the flattening film 19 corresponding to the plurality of pixel circuits in the display area D. There is. More specifically, the organic EL element layer 30 is composed of a plurality of organic EL elements 25 arranged in a matrix, and as shown in FIG. 3, a plurality of first electrodes sequentially provided on the TFT layer 20. It includes 21, an edge cover 22, a plurality of organic EL layers 23 provided as a plurality of functional layers, and a second electrode 24.

As shown in FIG. 3, the plurality of first electrodes 21 are provided in a matrix on the flattening film 19 so as to correspond to the plurality of sub-pixels P. Here, as shown in FIG. 3, the first electrode 21 is electrically connected to the drain electrode 18d (or source electrode 18c) of each second TFT 9b via a contact hole formed in the flattening film 19. There is. Further, the first electrode 21 has a function of injecting holes into the organic EL layer 23. Further, the first electrode 21 is more preferably formed of a material having a large work function in order to improve the hole injection efficiency into the organic EL layer 23. Examples of the material constituting the first electrode 21 include silver (Ag), aluminum (Al), vanadium (V), cobalt (Co), nickel (Ni), tungsten (W), gold (Au), and titanium ( Ti), ruthenium (Ru), manganese (Mn), indium (In), itterbium (Yb), lithium fluoride (LiF), platinum (Pt), palladium (Pd), molybdenum (Mo), iridium (Ir), Examples include metal materials such as tin (Sn). Further, the material constituting the first electrode 21 may be, for example, an alloy such as _{astatine (At) / oxidized astatine (AtO 2).} Further, the material constituting the first electrode 21 is, for example, a conductive oxide such as tin oxide (SnO), zinc oxide (ZnO), indium tin oxide (ITO), and indium zinc oxide (IZO). There may be. Examples of the compound material having a large work function include indium tin oxide (ITO) and indium zinc oxide (IZO). Further, the first electrode 21 may be formed by laminating a plurality of layers made of the above materials. Here, in the present embodiment, as shown in FIG. 3, the first electrode 21 has a layer made of indium tin oxide (ITO), a layer made of silver (Ag) as a reflective electrode, and indium tin oxide (ITO). ) Are laminated and formed. In other words, the first electrode 21 has a laminated structure in which a layer made of silver (Ag) is interposed between two layers of indium tin oxide (ITO). In the present specification, the reflective electrode means an electrode having a higher light reflectance than a metal layer such as a gate electrode 14a, for example.

As shown in FIG. 3, the edge cover 22 is provided in a grid pattern so as to cover the peripheral end portion 21b of each first electrode 21 so as to be common to the plurality of sub-pixels P. More specifically, as shown in FIGS. 3 and 6, a plurality of openings 42 are formed in the edge cover 22 corresponding to the positions of the plurality of first electrodes 21. As described above, the opening 42 is a bank hole (light emitting opening) formed on the first electrode 21. The shape of the opening 42 is not particularly limited, and is, for example, a rectangular shape (including a substantially rectangular shape such as a shape having arcuate sides and an arcuate corner), a circular shape, an elliptical shape, and the like. Can be mentioned. The material (bank material) constituting the edge cover 22 includes, for example, a positive photosensitive resin (material constituting the flattening film 19) such as a polyimide resin, an acrylic resin, a polysiloxane resin, and a novolak resin. Similar organic resin materials).

As shown in FIG. 3, the plurality of organic EL layers 23 are arranged on each of the first electrodes 21 and are provided in a matrix so as to correspond to the plurality of sub-pixels P. Here, as shown in FIG. 5, the organic EL layer 23 includes a hole injection layer 1, a hole transport layer 2, a light emitting layer 3, an electron transport layer 4, and an electron injection layer, which are sequentially provided on the first electrode 21. It has 5.

The hole injection layer 1 is also called an anode buffer layer, and has a function of bringing the energy levels of the first electrode 21 and the organic EL layer 23 closer to each other and improving the hole injection efficiency from the first electrode 21 to the organic EL layer 23. Have. Here, as the material constituting the hole injection layer 1, for example, a triazole derivative, an oxadiazole derivative, an imidazole derivative, a polyarylalkane derivative, a pyrazoline derivative, a phenylenediamine derivative, an oxazole derivative, a styrylanthracene derivative, a fluorenone derivative, etc. Examples include hydrazone derivatives and stillben derivatives.

The hole transport layer 2 has a function of improving the hole transport efficiency from the first electrode 21 to the organic EL layer 23. Here, examples of the material constituting the hole transport layer 2 include a porphyrin derivative, an aromatic tertiary amine compound, a styrylamine derivative, polyvinylcarbazole, a poly-p-phenylene vinylene, a polysilane, a triazole derivative, and an oxadiazole. Derivatives, imidazole derivatives, polyarylalkane derivatives, pyrazoline derivatives, pyrazolone derivatives, phenylenediamine derivatives, arylamine derivatives, amine-substituted chalcone derivatives, oxazole derivatives, styrylanthracene derivatives, fluorenone derivatives, hydrazone derivatives, stillben derivatives, hydride amorphous silicon, Examples thereof include hydride amorphous silicon carbide, zinc sulfide, and zinc selenium.

In the light emitting layer 3, when a voltage is applied by the first electrode 21 and the second electrode 24, holes and electrons are injected from the first electrode 21 and the second electrode 24, respectively, and the holes and electrons are recombined. The area. Here, the light emitting layer 3 is formed of a material having high luminous efficiency. Examples of the material constituting the light emitting layer 3 include a metal oxinoid compound [8-hydroxyquinolin metal complex], a naphthalene derivative, an anthracene derivative, a diphenylethylene derivative, a vinylacetone derivative, a triphenylamine derivative, a butadiene derivative, and a coumarin derivative. , Benzoxazole derivative, oxadiazole derivative, oxazole derivative, benzimidazole derivative, thiadiazole derivative, benzthiazole derivative, styryl derivative, styrylamine derivative, bisstyrylbenzene derivative, tristylylbenzene derivative, perylene derivative, perinone derivative, aminopyrene derivative, Examples thereof include pyridine derivatives, rhodamine derivatives, aquidin derivatives, phenoxazone, quinacridone derivatives, rubrene, poly-p-phenylene vinylene, and polysilane.

The electron transport layer 4 has a function of efficiently moving electrons to the light emitting layer 3. Here, as the material constituting the electron transport layer 4, for example, as an organic compound, an oxadiazole derivative, a triazole derivative, a benzoquinone derivative, a naphthoquinone derivative, an anthraquinone derivative, a tetracyanoanthracinodimethane derivative, a diphenoquinone derivative, and a fluorenone derivative , Cyrol derivatives, metal oxinoid compounds and the like.

The electron injection layer 5 has a function of bringing the energy levels of the second electrode 24 and the organic EL layer 23 closer to each other and improving the efficiency of injecting electrons from the second electrode 24 into the organic EL layer 23. The drive voltage of the organic EL element 25 can be lowered. The electron injection layer 5 is also called a cathode buffer layer. Here, examples of the material constituting the electron injection layer 5 include lithium fluoride (LiF), magnesium fluoride (MgF ₂ ), calcium fluoride (CaF ₂ ), strontium fluoride (SrF ₂ ), and barium fluoride. Inorganic alkaline compounds such as (BaF ₂ ), aluminum oxide (Al ₂ O ₃ ), strontium oxide (SrO) and the like can be mentioned.

As shown in FIG. 3, the second electrode 24 is provided so as to cover the organic EL layer 23 of each sub-pixel P and the edge cover 22 common to all sub-pixels P. Further, the second electrode 24 has a function of injecting electrons into the organic EL layer 23. Further, the second electrode 24 is more preferably made of a material having a small work function in order to improve the electron injection efficiency into the organic EL layer 23. Here, examples of the material constituting the second electrode 24 include silver (Ag), aluminum (Al), vanadium (V), cobalt (Co), nickel (Ni), tungsten (W), and gold (Au). , Calcium (Ca), Titanium (Ti), Yttrium (Y), Sodium (Na), Luthenium (Ru), Manganese (Mn), Indium (In), Magnesium (Mg), Lithium (Li), Itterbium (Yb) , Lithium fluoride (LiF) and the like. Further, the second electrode 24 is, for example, magnesium (Mg) / copper (Cu), magnesium (Mg) / silver (Ag), sodium (Na) / potassium (K), asstatin (At) / oxidized asstatin (AtO _2). ), Lithium (Li) / Aluminum (Al), Lithium (Li) / Calcium (Ca) / Aluminum (Al), Lithium Fluoride (LiF) / Calcium (Ca) / Aluminum (Al), etc. You may. Further, the second electrode 24 may be formed of, for example, a conductive oxide such as tin oxide (SnO), zinc oxide (ZnO), indium tin oxide (ITO), and indium zinc oxide (IZO). .. Further, the second electrode 24 may be formed by laminating a plurality of layers made of the above materials. Examples of materials having a small work function include magnesium (Mg), lithium (Li), lithium fluoride (LiF), magnesium (Mg) / copper (Cu), magnesium (Mg) / silver (Ag), and sodium. (Na) / Potassium (K), Lithium (Li) / Aluminum (Al), Lithium (Li) / Calcium (Ca) / Aluminum (Al), Lithium Fluoride (LiF) / Calcium (Ca) / Aluminum (Al) And so on.

As shown in FIG. 3, the sealing layer 35 is provided on the organic EL element layer 30 so as to cover each organic EL element 25. Specifically, as shown in FIG. 3, the sealing layer 35 includes a first sealing inorganic film 31 provided on the resin substrate layer 10 side so as to cover the second electrode 24, and a first sealing inorganic film 31. It includes a sealing organic film 32 provided above and a second sealing inorganic film 33 provided so as to cover the sealing organic film 32. The sealing layer 35 has a function of protecting the organic EL layer 23 from moisture, oxygen, and the like. Here, the first sealing inorganic film 31 and the second sealing inorganic film 33 are, for example, silicon oxide (SiO ₂ ), aluminum oxide (Al ₂ O ₃ ), _{trisilicon tetroxide (Si 3} N ₄ ), and the like. It is composed of an inorganic material such as silicon nitride (SiNx (x is a positive number)) and silicon nitride (SiCN). Further, the sealing organic film 32 is made of an organic material such as an acrylic resin, a polyurea resin, a parylene resin, a polyimide resin, or a polyamide resin.

Here, in the organic EL display device 50a, as shown in FIGS. 3 and 6, a support portion S (FIG. 3) is formed on the lower layer (lower surface) of each first electrode 21 along the peripheral end portion 21b of the first electrode 21. 3 and FIG. 6 are provided with dots). The support portion S supports the first electrode 21 at the peripheral end portion 21b. The support portion S is provided on the entire circumference of the first electrode 21. Further, the upper surface Sa of the support portion S is in contact with the first electrode 21.

Further, in the organic EL display device 50a, the support portion S is formed of a part of the flattening film 19. Here, the flattening film 19 is a resin layer. This resin layer is photosensitive. That is, the flattening film 19 and the support portion S formed of a part thereof are composed of a resin layer made of a photosensitive resin.

Further, in the organic EL display device 50a, as shown in FIGS. 3 and 6, a plurality of recesses 49 are formed in the flattening film 19 corresponding to the positions of the plurality of first electrodes 21. The bottom surface portion 49a of the recess 49 overlaps the central portion 21a of the first electrode 21 and the opening 42 of the edge cover 22 in a plan view. In other words, the bottom surface portion 49a of the recess 49 is the top surface 19a of the flattening film 19 that overlaps with the opening 42 of the edge cover 22 in a plan view. Further, the peripheral end portion 49b of the concave portion 49 overlaps with the peripheral end portion 21b of the first electrode 21 in a plan view. Here, the peripheral end portion 49b of the recess 49 is a support portion S (constituting the support portion S).

Further, in the organic EL display device 50a, as shown in FIGS. 3 and 6, the support portion S (the outer peripheral end portion Sb of the support portion S) is surrounded by the peripheral end portion 21b of the first electrode 21 in a plan view. ing. In other words, the outer peripheral end portion Sb of the support portion S is arranged flush with the peripheral end portion 21b of the first electrode 21 or inside the peripheral end portion 21b. The peripheral end of the opening 42 of the edge cover 22 is surrounded by the support portion S (the inner peripheral end portion Sd of the support portion S). In other words, the peripheral end portion of the opening 42 of the edge cover 22 is arranged inside the inner peripheral end portion Sd of the support portion S.

Further, in the organic EL display device 50a, as shown in FIG. 3, at least a part of the upper surface Sa of the support portion S (peripheral end portion 49b of the recess 49) is seen in plan with the opening 42 of the edge cover 22 in a cross-sectional view. The position is higher than the upper surface 19a (bottom surface 49a of the recess 49) of the flattening film 19 superimposed on the above. In other words, as shown in FIG. 3, the thickness of the flattening film 19 at the peripheral end portion 49b is larger than the thickness of the flattening film 19 at the bottom surface portion 49a. In other words, in cross-sectional view, the upper surface of the peripheral end portion 49b (the upper surface Sa of the support portion S) is raised with respect to the bottom surface portion 49a by the thickness of the support portion S via the step portion 49c. The step portion 49c may be inclined upward from the bottom surface portion 49a toward the upper surface of the peripheral end portion 49b, or may be curved upward.

As described above, in the organic EL display device 50a, the base flattening film 19 is formed by forming the recess 49 in the flattening film 19 (superimposed on the first electrode 21 in a plan view) under each first electrode 21. Unevenness (step) is formed on the surface. The size of the step of the flattening film 19 (the thickness of the support portion S, the difference between the thickness of the bottom surface portion 49a and the thickness of the peripheral end portion 49b) is, for example, about 100 nm to 1000 nm.

Then, in the organic EL display device 50a, since the first electrode 21 is formed on the flattening film 19 in the recess 49, the shape corresponds to the surface shape of the recess 49. Specifically, as shown in FIG. 3, at least a part of the upper surface of the first electrode 21 (the peripheral end portion 21b of the first electrode 21) that overlaps with the support portion S in a plan view is the opening 42 of the edge cover 22. It is higher than the upper surface of the first electrode 21 (central portion 21a of the first electrode 21) that overlaps with the above in a plan view. That is, the support portion S also forms a step on the first electrode 21. As a result, the surface area of the first electrode 21 is increased, so that the surface tension (resistance) of the bank material with respect to the first electrode 21 is increased.

In the organic EL display device 50a, as a result of the surface tension (resistance) of the bank material with respect to the first electrode 21 being increased by the support portion S, as shown in FIG. 7, the bank hole after bank baking is the first electrode 21. It may extend to the vicinity of the peripheral end portion 21b. In other words, as shown in FIG. 7, at least a part of the support portion S may overlap with the opening 42 of the edge cover 22 in a plan view.

Further, in the organic EL display device 50a, the recess 49 is formed in the flattening film 19, but instead of the recess 49, for example, the flattening film 19 is formed corresponding to the positions of the plurality of first electrodes 21. A plurality of formed annular patterns C ₁₉ may be provided. In this case, each annular pattern C ₁₉ (annular flattening film 19) of the flattening film 19 is the support portion S.

The organic EL display device 50a described above turns on the first TFT 9a by inputting a gate signal to the first TFT 9a via the gate line 14 in each sub-pixel P, and turns on the first TFT 9a, and the gate electrode of the second TFT 9b via the source line 18f. By writing a data signal to the 14b and the capacitor 9c and supplying a current from the power supply line 18g corresponding to the gate voltage of the second TFT 9b to the organic EL layer 23, the light emitting layer 3 of the organic EL layer 23 emits light, and the image It is configured to display. In the organic EL display device 50a, even if the first TFT 9a is turned off, the gate voltage of the second TFT 9b is held by the capacitor 9c, so that the light emitting layer 3 emits light until the gate signal of the next frame is input. Be maintained.

Next, a method of manufacturing the organic EL display device 50a of the present embodiment will be described. Here, the method for manufacturing the organic EL display device 50a of the present embodiment includes a resin substrate layer forming step, a TFT layer forming step, an organic EL element layer forming step, a sealing layer forming step, and a mounting step. ..

<Resin substrate layer forming process>
For example, a flexible resin substrate layer 10 is formed by applying a non-photosensitive polyimide resin on a support substrate (not shown) such as a glass substrate and then prebaking and post-baking the coated film. do.

<TFT layer forming process>
First, on the surface of the resin substrate layer 10 formed in the resin substrate layer forming step, for example, using a well-known method, the base coat film 11, the semiconductor layers 12a and 12b, the gate insulating film 13, the gate electrode 14a, and the first interlayer film are used. The TFT layer 20 is formed by laminating the insulating film 15, the second interlayer insulating film 17, the wiring layer (source electrode 18a, drain electrode 18b, etc.), the flattening film 19, and the like in this order. Specifically, the base coat film 11, the first TFT 9a, the second TFT 9b, the capacitor 9c, and the flattening film 19 are formed on the resin substrate layer 10. The flattening film 19 is formed in a resin layer made of a photosensitive resin, for example, by using a photosensitive resin.

Subsequently, for example, a plurality of first electrodes 21 formed in the next organic EL element layer forming step by photolithography and subsequent patterning (etching) are formed on a part of the flattening film 19. The support portion S is formed. More specifically, the flattening film 19 is patterned using a gray tone mask to form a plurality of recesses 49 or a plurality of annular patterns C ₁₉ in the flattening film 19. At this time, the recess 49 and the contact hole may be formed in the flattening film 19 at the same time. _{The peripheral end portion 49b or the plurality of annular patterns C 19} in the recess 49 of the flattening film 19 formed by this step serves as the support portion S.

<Organic EL element layer forming process>
On the flattening film 19 of the TFT layer 20 formed in the TFT layer forming step, a plurality of first electrodes 21 are common to the plurality of sub-pixels P constituting the display region D by using a well-known method. Edge cover 22, a plurality of organic EL layers 23 (hole injection layer 1, hole transport layer 2, light emitting layer 3, electron transport layer 4, electron injection layer 5) and a plurality of common second electrodes 24. The organic EL element 25 is formed to form the organic EL element layer 30.

More specifically, first, a metal layer for the first electrode 21 (reflection electrode) is formed on the surface of the flattening film 19 on which a plurality of recesses 49 or a plurality of annular patterns C _{19 are formed in the TFT layer forming step.} And photolithography and patterning. As a result, the first electrode 21 having a shape corresponding to the surface shape of the recess 49 or the annular pattern C _{19 is formed.} At this time, the first electrode 21 is formed so that the outer peripheral end portion Sb of the support portion S is arranged flush with the peripheral end portion 21b of the first electrode 21 or inside the peripheral end portion 21b.

Subsequently, the bank material is applied in a grid pattern so as to cover the peripheral end portion 21b of each first electrode 21, photolithography and patterning are performed, and then bank baking is performed. As a result, a bank (edge cover 22) in which the opening 42 is formed is formed corresponding to the position of each first electrode 21. At this time, the edge cover 22 is formed so that the peripheral end portion of the opening 42 of the edge cover 22 is arranged inside the inner peripheral end portion Sd of the support portion S.

After that, the organic EL layer 23, the second electrode 24, etc. are formed on the first electrode 21 or the edge cover 22.

<Encapsulation layer forming process>
First, a mask is used so as to cover each organic EL element 25 on the organic EL element layer 30 formed in the organic EL element layer forming step, for example, a silicon nitride film, a silicon oxide film, a silicon oxynitride film, or the like. The inorganic insulating film of No. 1 is formed by a plasma CVD (chemical vapor deposition) method to form the first sealing inorganic film 31.

Subsequently, an organic resin material such as an acrylic resin is formed on the surface of the substrate on which the first sealing inorganic film 31 is formed by, for example, an inkjet method to form the sealing organic film 32.

Then, an inorganic insulating film such as a silicon nitride film, a silicon oxide film, or a silicon oxynitride film is formed by a plasma CVD method so as to cover the sealing organic film 32, and the second sealing is performed. The inorganic film 33 is formed.

<Mounting process>
First, a protective sheet (not shown) is attached to the surface of the substrate on which the sealing layer 35 is formed in the sealing layer forming step, and then the resin substrate layer is irradiated with laser light from the glass substrate side of the resin substrate layer 10. The glass substrate is peeled off from the back surface of 10. Subsequently, a protective sheet (not shown) is attached to the back surface of the resin substrate layer 10 from which the glass substrate has been peeled off.

Subsequently, the mother substrate in which a plurality of display substrates manufactured by each of the above steps are arranged in a matrix is divided by, for example, laser light, and the display panels are individually cut out and individualized.

Finally, the protective sheet is partially removed by, for example, irradiating the protective sheet attached to the surface of the display substrate on which the sealing layer 35 is formed with laser light. Subsequently, a functional film having various functions such as an optical compensation function, a touch sensor function, and a protective function is attached to the surface of the sealing layer 35 from which the protective sheet has been removed via an adhesive layer (OCA).

As described above, the organic EL display device 50a of the present embodiment can be manufactured.

As described above, according to the organic EL display device 50a of the present embodiment, the following effects can be obtained.

(1) In the organic EL display device 50a, as shown in FIGS. 3 and 6, in the display region D, the lower layer of each first electrode 21 has a support portion S along the peripheral end portion 21b of the first electrode 21. Is provided. Then, at least a part of the upper surface Sa of the support portion S is located higher than the upper surface 19a of the flattening film 19 that overlaps the opening 42 of the edge cover 22 in a plan view. As a result, at least a part of the upper surface of the peripheral end portion 21b that overlaps with the support portion S in a plan view of the first electrode 21 is at a position higher than the upper surface of the central portion 21a (the first electrode 21 has irregularities (steps). ) Can be done). As a result, the surface tension (resistance) of the bank material with respect to the first electrode 21 becomes large, so that even if the bank material is thermally shrunk during bank baking, the opening 42 (bank hole, light emitting opening) of the edge cover 22 is the first. It is possible to suppress the spread beyond the step of one electrode 21. Therefore, it is possible to prevent at least a part of the peripheral end portion of the bank hole from stepping off the first electrode 21.

(2) As a result of suppressing the stepping off of the first electrode 21 at least a part of the peripheral end portion of the bank hole, the occurrence of cracks in the flattening film 19 in the display region D can be suppressed.

(3) Further, as a result of suppressing the stepping off of the first electrode 21 by at least a part of the peripheral end portion of the bank hole, the function of the edge cover 22 can be maintained.

(4) Further, as a result of suppressing that at least a part of the peripheral end portion of the bank hole is depressed from stepping on the first electrode 21, the bank hole is extended to the vicinity of the peripheral end portion 21b of the first electrode 21 as shown in FIG. Can be formed large. In this case, since the light emitting area of the sub-pixel P can be increased, the display quality of the organic EL display device 50a can be improved.

(5) As a result of suppressing the occurrence of cracks in the flattening film 19 in the display area D and maintaining the function of the edge cover 22, the reliability of the organic EL display device 50a can be improved.

(6) Defective product inspection before the organic EL element layer forming process when at least a part of the peripheral end of the bank hole has a defect of stepping off the first electrode 21 or a defect of cracking in the flattening film 19 occurs. Becomes easier. As a result, the reliability of the organic EL display device 50a can be improved.

<< Second Embodiment >>
Next, a second embodiment of the present invention will be described. 8 to 10 show a second embodiment of the display device according to the present invention. FIG. 8 is a cross-sectional view of the display area D of the organic EL display device 50b according to the present embodiment, and is a view corresponding to FIG. Further, FIG. 9 is an enlarged plan view of the display area D of the organic EL display device 50b, which corresponds to FIG. In the enlarged plan view of FIG. 9, the edge cover 22, the organic EL layer 23, the second electrode 24, and the sealing layer 35 shown in FIG. 8 are omitted.

Since the overall configuration of the organic EL display device 50b other than the support portion S is the same as that of the first embodiment described above, detailed description thereof will be omitted here. Further, the same components as those in the first embodiment are designated by the same reference numerals, and the description thereof will be omitted.

In the organic EL display device 50b, as shown in FIGS. 8 and 9, a second inorganic insulating film 45 is provided on a flattening film 19 that overlaps each first electrode 21 in a plan view. The support portion S is formed by the second inorganic insulating film 45.

Further, in the organic EL display device 50b, as shown in FIG. 9, a plurality of annular patterns C ₄₅ formed of the second inorganic insulating film 45 are provided along the plurality of first electrodes 21. Here, the annular pattern C ₄₅ (annular second inorganic insulating film 45) of the second inorganic insulating film 45 is the support portion S. That is, the support portion S is formed on the entire circumference of the first electrode 21. As shown in FIGS. 8 and 9, the outer peripheral end portion Sb of the support portion S is surrounded by the peripheral end portion 21b of the first electrode 21. The peripheral end of the opening 42 of the edge cover 22 is surrounded by the inner peripheral end Sd of the support portion S.

Further, the annular second inorganic insulating film 45 is independent and is not connected (not connected) to other inorganic insulating films constituting the adjacent sub-pixels P.

As described above, in the organic EL display device 50b, as shown in FIGS. 8 and 9, in the thickness direction of the flattening film 19, between the flattening film 19 and the first electrode 21, the support portion S is annular. A second inorganic insulating film 45 is interposed. In other words, the upper surface of the annular second inorganic insulating film 45 is in contact with the first electrode 21, and the lower surface thereof is in contact with the flattening film 19.

Then, in the organic EL display device 50b, since the first electrode 21 is formed on the flattening film 19 and the annular second inorganic insulating film 45, as shown in FIG. 8, the annular pattern C ₄₅ and the annular pattern C 45 are viewed in a plan view. At least a part of the upper surface of the first electrode 21 (the peripheral end portion 21b of the first electrode 21) to be superimposed overlaps with the opening 42 of the edge cover 22 in a plan view, the first electrode 21 (the central portion 21a of the first electrode 21). ) Is higher than the upper surface. That is, the annular pattern C ₄₅ also forms a step on the first electrode 21. The thickness of the annular second inorganic insulating film 45 (support portion S) is, for example, about 100 nm to 500 nm.

The material constituting the second inorganic insulating film 45 may be any material that can form a film at a temperature lower than the bake temperature (about 250 ° C.) of the base flattening film 19 under the first electrode 21, for example. four nitride three silicon _(Si 3 _{N 4)} or the like of a silicon nitride (SiNx (x is a positive number)), and inorganic materials such as silicon carbonitride (SiCN) is. The second inorganic insulating film 45 is composed of a single-layer film or a laminated film of an inorganic insulating film made of the above-mentioned inorganic material.

In the method for manufacturing the organic EL display device 50a of the first embodiment described above, the organic EL display device 50b is, for example, changed the TFT layer forming step as follows, and is organic after the TFT layer forming step. It can be manufactured by providing a second inorganic insulating film patterning step before the EL element layer forming step.

<TFT layer forming process>
On the surface of the resin substrate layer 10 formed in the resin substrate layer forming step, for example, the semiconductor layers 12a and 12b, the first inorganic insulating film, and the wiring layer (source electrode 18a, drain electrode 18b, etc.) are used on the surface of the resin substrate layer 10. The TFT layer 20 is formed by laminating the flattening film 19 and the like in order. Specifically, the base coat film 11, the first TFT 9a, the second TFT 9b, the capacitor 9c, and the flattening film 19 are formed on the resin substrate layer 10. The flattening film 19 is formed in a resin layer made of a photosensitive resin, for example, by using a photosensitive resin.

<Second inorganic insulating film patterning process>
Nitride using, for example, a well-known method, corresponding to the positions of the plurality of first electrodes 21 formed in the next organic EL element layer forming step on the surface of the flattening film 19 formed in the TFT layer forming step. The second inorganic insulating film 45 is formed by forming an inorganic insulating film such as a silicon film and patterning the film. More specifically, the second inorganic insulating film 45 is photolithographically and patterned using a mask to provide _{the annular pattern C 45 of the second inorganic insulating film 45.} As a result, the support portion S is formed by the annular second inorganic insulating film 45.

According to the organic EL display device 50b described above, the following effects can be obtained in addition to the effects (1) to (6) above.

(7) In the organic EL display device 50b, as shown in FIGS. 8 and 9, a second inorganic insulating film 45 is provided on the flattening film 19, and the support portion S is provided by the second inorganic insulating film 45. It is formed. _{In the present embodiment, a plurality of annular patterns C 45} formed of the second inorganic insulating film 45 are provided corresponding to the positions of the plurality of first electrodes 21, and each of the annular patterns C ₄₅ serves as a support portion S. ing. Since the annular second inorganic insulating film 45 is not connected to the other inorganic insulating films constituting the adjacent sub-pixels P independently of each other, it is possible to prevent the annular second inorganic insulating film 45 from peeling off from the flattening film 19 at the time of bank baking. can.

<< Modified example of the second embodiment >>
FIG. 10 is a cross-sectional view showing a modified example of the display area D of the organic EL display device 50b, and is a view corresponding to FIG. In the organic EL display device 50b, the pattern shape of the second inorganic insulating film 45 may be changed.

In a modified example of the organic EL display device 50b, as shown in FIG. 10, a plurality of openings 46 are formed in the second inorganic insulating film 45 corresponding to the positions of the plurality of first electrodes 21. That is, at each opening 46, the second inorganic insulating film 45 is removed, and the flattening film 19 and the first electrode 21 are in contact with each other. Each opening 46 overlaps the central portion 21a of the first electrode 21 and the opening 42 of the edge cover 22 in a plan view. Here, the second inorganic insulating film 45 at the peripheral end of each opening 46 is the support portion S. In other words, the second inorganic insulating film 45 at the portion around the opening 46 of the second inorganic insulating film 45 that overlaps with the first electrode 21 in a plan view is the support portion S.

Further, in the modified example of the organic EL display device 50b, as shown in FIG. 10, in the display region D, the second inorganic insulation is also formed on the flattening film 19 in the portion other than the portion that overlaps with the first electrode 21 in a plan view. The film 45 is formed.

As described above, in the modified example of the organic EL display device 50b, as shown in FIG. 10, each of the second inorganic insulating films 45 at the peripheral ends of the plurality of openings 46 among the second inorganic insulating films 45 in the display region D. Is the support portion S. That is, the support portion S is formed of a part of the second inorganic insulating film 45.

A modified example of the organic EL display device 50b can be manufactured by, for example, changing the pattern shape of the second inorganic insulating film 45 in the second inorganic insulating film patterning step in the above-mentioned manufacturing method of the organic EL display device 50b. More specifically, first, an inorganic insulating film such as a silicon nitride film is formed on the surface of the flattening film 19 in the display region D by using a well-known method, and the second inorganic insulating film 45 is formed. Form. Subsequently, the second inorganic insulating film 45 is photolithographically and patterned using a mask, and a plurality of openings are formed in the second inorganic insulating film 45 at a portion that overlaps with the central portion 21a of the plurality of first electrodes 21 in a plan view. Form 46. As a result, the support portion S is formed by the second inorganic insulating film 45 at the peripheral end of the opening 46, that is, a part of the second inorganic insulating film 45.

According to the modification of the organic EL display device 50b described above, the following effects can be obtained in addition to the effects (1) to (6) above.

(8) In the modified example of the organic EL display device 50b, the support portion S is formed by a part of the second inorganic insulating film 45, and in the display region D, in a portion other than the portion that overlaps with the first electrode 21 in a plan view. A second inorganic insulating film 45 is also formed on the flattening film 19. As a result, even if at least a part of the peripheral end of the bank hole is stepped off from the first electrode 21 at the time of bank baking, the surface of the flattening film 19 is covered with the second inorganic insulating film 45, so that the bank material can be used. The contraction stress is difficult to be transmitted to the flattening film 19. As a result, the occurrence of cracks in the flattening film 19 can be suppressed.

<< Other Embodiments >>
In each of the above embodiments, the first inorganic insulating film is composed of four layers in which the base coating film 11, the gate insulating film 13, the first interlayer insulating film 15 and the second interlayer insulating film 17 are laminated in this order. It may be composed of one layer of the film 11, or may be composed of two layers of the base coat film 11 and the gate insulating film 13, and may be composed of three layers of the base coat film 11, the gate insulating film 13 and the first interlayer insulating film 15. It may be composed of.

In each of the above embodiments, an organic EL layer having a five-layer laminated structure of a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer, and an electron injection layer has been exemplified. It may have a three-layer laminated structure of a layer / hole transport layer, a light emitting layer, and an electron transport layer / electron injection layer.

Further, in each of the above embodiments, an organic EL display device in which the first electrode is used as an anode and the second electrode is used as a cathode is illustrated, but in the present invention, the laminated structure of the organic EL layer is inverted and the first electrode is used as a cathode. It can also be applied to an organic EL display device using the second electrode as an anode.

Further, in each of the above embodiments, an organic EL display device in which the electrode of the TFT connected to the first electrode is used as the drain electrode is illustrated, but in the present invention, the electrode of the TFT connected to the first electrode is used as the source electrode. It can also be applied to an organic EL display device to be called.

Further, in each of the above embodiments, the organic EL display device has been described as an example of the display device, but the present invention is not limited to the organic EL display device, and any flexible display device can be applied. For example, it can be applied to a flexible display device provided with a QLED (Quantum-dot light emission diode) or the like, which is a light emitting element using a quantum dot-containing layer.

As described above, the present invention is useful for flexible display devices.

C ₁₉ Circular pattern of flattening film C ₄₅ Circular pattern of second inorganic insulating film D Display area F Frame area P Sub-pixel S Support part Sa Top surface of support part Sb Outer peripheral end of support part Sd Inner peripheral end of support part 10 Resin substrate layer 11 Base coat film (at least one first inorganic insulating film)
12a, 12b Semiconductor layer 13 Gate insulating film (at least one first inorganic insulating film)
14 Gate wire (wiring layer)
14a, 14b Gate electrode (wiring layer)
14c Lower conductive layer (wiring layer)
15 First interlayer insulating film (at least one first inorganic insulating film)
16 Upper conductive layer (wiring layer)
17 Second interlayer insulating film (at least one first inorganic insulating film)
18a, 18c, 18f Source electrode (wiring layer)
18b, 18d drain electrode (wiring layer)
19 Flattening film 19a Upper surface of flattening film 20 TFT (thin film transistor) layer 21 First electrode 21a Central part of first electrode 21b Peripheral end part of first electrode 22 Edge cover 23 Organic EL layer (functional layer)
24 Second electrode 25 Organic EL element (organic electroluminescence element, light emitting element)
30 Organic EL element layer (light emitting element layer)
35 Sealing layer 42 Edge cover opening 45 Second inorganic insulating film 46 Second inorganic insulating film opening 49 Flattening film recess 49a Bottom of recess 49b Peripheral end of

recess

50a, 50b Organic EL display device

Claims

Resin substrate layer and
A thin film transistor layer provided on the resin substrate layer and in which a semiconductor layer, at least one first inorganic insulating film, a wiring layer, and a flattening film are laminated in this order.
A light emitting device provided on the thin film transistor layer in which a plurality of first electrodes, a common edge cover, a plurality of functional layers, and a common second electrode are sequentially laminated corresponding to a plurality of sub-pixels constituting a display area. A display device with layers
A plurality of openings are formed in the edge cover corresponding to the positions of the plurality of first electrodes.
A support portion is provided in the lower layer of each of the first electrodes along the peripheral end portion of the first electrode.
A display device characterized in that at least a part of the upper surface of the support portion is located at a position higher than the upper surface of the flattening film that overlaps with the opening of the edge cover in a plan view.
In the display device according to claim 1,
A display device characterized in that the support portion is formed of a part of the flattening film.
In the display device according to claim 2,
A plurality of recesses are formed in the flattening film corresponding to the positions of the plurality of first electrodes.
A display device characterized in that the peripheral end portion of each of the recesses is the support portion.
In the display device according to claim 1,
A plurality of annular patterns formed of the flattening film are provided corresponding to the positions of the plurality of first electrodes.
A display device characterized in that each annular pattern of the flattening film is the support portion.
In the display device according to any one of claims 2 to 4.
A display device characterized in that the flattening film is a resin layer.
In the display device according to claim 5,
A display device characterized in that the resin layer has photosensitivity.
In the display device according to claim 1,
A second inorganic insulating film is provided on the flattening film.
A display device characterized in that the support portion is formed by the second inorganic insulating film.
In the display device according to claim 7,
A display device characterized in that the support portion is formed of a part of the second inorganic insulating film.
In the display device according to claim 8,
A plurality of openings are formed in the second inorganic insulating film corresponding to the positions of the plurality of first electrodes.
A display device characterized in that the second inorganic insulating film at the peripheral end of each of the openings is the support portion.
In the display device according to claim 7,
A plurality of annular patterns formed of the second inorganic insulating film are provided corresponding to the positions of the plurality of first electrodes.
A display device characterized in that each annular pattern of the second inorganic insulating film is the support portion.
In the display device according to any one of claims 1 to 10.
A display device characterized in that at least a part of the support portion overlaps with the opening of the edge cover in a plan view.
In the display device according to any one of claims 1 to 10.
A display device characterized in that the support portion is surrounded by the peripheral end portion of the first electrode, and the peripheral end portion of the opening of the edge cover is surrounded by the support portion.