WO2021135012A1 - Bulk acoustic wave resonator and encapsulation method therefor, filter, and electronic device - Google Patents

Bulk acoustic wave resonator and encapsulation method therefor, filter, and electronic device Download PDF

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Publication number
WO2021135012A1
WO2021135012A1 PCT/CN2020/088722 CN2020088722W WO2021135012A1 WO 2021135012 A1 WO2021135012 A1 WO 2021135012A1 CN 2020088722 W CN2020088722 W CN 2020088722W WO 2021135012 A1 WO2021135012 A1 WO 2021135012A1
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top electrode
layer
acoustic wave
bulk acoustic
resonator
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PCT/CN2020/088722
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French (fr)
Chinese (zh)
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徐洋
庞慰
郝龙
张孟伦
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诺思(天津)微系统有限责任公司
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/125—Driving means, e.g. electrodes, coils
    • H03H9/13—Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials
    • H03H9/131—Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials consisting of a multilayered structure
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
    • H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
    • H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
    • H03H9/173—Air-gaps
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
    • H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
    • H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
    • H03H9/174—Membranes
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
    • H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
    • H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
    • H03H9/175—Acoustic mirrors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/46—Filters
    • H03H9/54—Filters comprising resonators of piezo-electric or electrostrictive material
    • H03H9/547—Notch filters, e.g. notch BAW or thin film resonator filters
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • H03H2003/021—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks the resonators or networks being of the air-gap type
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • H03H2003/023—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks the resonators or networks being of the membrane type
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • H03H2003/025—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks the resonators or networks comprising an acoustic mirror
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • H03H2003/028—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired values of other parameters
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H2009/02165—Tuning
    • H03H2009/02173—Tuning of film bulk acoustic resonators [FBAR]

Definitions

  • the embodiments of the present invention relate to the semiconductor field, and in particular to a bulk acoustic wave resonator, a filter having the resonator, and an electronic device having the resonator or the filter, and a bulk acoustic wave resonator. Packaging method.
  • Bulk acoustic wave resonators are widely used in various electronic components in the modern communication field, such as filters, duplexers, and so on.
  • FBAR film bulk acoustic resonator
  • wafer-level packaging of FBAR products is required.
  • Figure 9 shows a schematic cross-sectional view of wafer-level packaging of a single product in an existing design, where the reference numerals are indicated as follows: 201: product wafer base; 202: cap wafer, used to protect the device ( 205); 203: sealing ring structure; 204: pad from which the device signal is drawn; 205: device, such as the effective area of the filter; 206: metal connection between the resonator and the pad; 207: metal conduction Through hole (Via); 208: pin.
  • this type of semiconductor device usually has strict or even harsh requirements on the operating frequency of each bulk wave resonator.
  • the design dimensions are exactly the same, it is difficult for the resonator actually processed on a wafer to ensure that its resonant frequency reaches the target operating frequency.
  • the electrode/piezoelectric layer thickness and electrode piezoelectricity of every two resonators in the wafer The size and shape of the layers will vary within a certain range. From the above facts, it can be known that the bulk wave resonator initially obtained from the previous MEMS process usually has a part of the frequency that falls outside the allowable range of the index. If you simply abandon this part of the resonator, it will lead to a reduction in production capacity and a disguised increase in cost. Therefore, a certain process is usually adopted to trim the resonator that does not meet the frequency requirements, so that the trimmed frequency falls within the range of the index requirements.
  • the current commonly used frequency trimming method is to use ion beams to bombard the top electrode or other process layers on the upper surface of the top electrode to remove part of the electrode or process layer material After the material is removed, as the mass load of the resonator becomes smaller, its resonant frequency will increase, so as to achieve the effect of frequency trimming.
  • the present invention proposes a packaging solution.
  • a bulk acoustic wave resonator including
  • the top electrode includes a first top electrode and a second top electrode, the first top electrode is attached to the piezoelectric layer, and a gap layer is formed between the first top electrode and the second top electrode in the thickness direction of the resonator between;
  • the sealing layer covers at least the upper side of the effective area of the resonator to constitute an encapsulation layer of the resonator.
  • the bulk acoustic wave resonator includes a resonator device, the resonator device includes: a top electrode; a piezoelectric layer; a bottom electrode; and an acoustic mirror, wherein: the top The electrode includes a first top electrode and a second top electrode, the first top electrode is attached to the piezoelectric layer, and a gap layer is formed between the first top electrode and the second top electrode in the thickness direction of the resonator, The method includes the steps:
  • a sealing layer is covered on the upper side of the resonator device, and the sealing layer constitutes an encapsulation layer of the resonator device.
  • the embodiment of the present invention also relates to a filter having the above-mentioned resonator, and an electronic device having the above-mentioned resonator or filter.
  • Fig. 1 is a schematic top view of a bulk acoustic wave resonator according to an exemplary embodiment of the present invention
  • FIG. 2 is a schematic cross-sectional view of a bulk acoustic wave resonator according to an exemplary embodiment of the present invention taken along the A-B fold line in FIG. 1, which shows the packaging layer of the resonator;
  • FIG. 3 is a schematic cross-sectional view of a bulk acoustic wave resonator according to another exemplary embodiment of the present invention.
  • FIG. 4 is a diagram of an array of frequency adjustment channels of a bulk acoustic wave resonator according to an exemplary embodiment of the present invention
  • FIG. 5 is a schematic cross-sectional view of a bulk acoustic wave resonator according to an exemplary embodiment of the present invention, which shows that the ion beam bombards the first top electrode through the frequency adjustment channel;
  • FIG. 6 is a schematic cross-sectional view of a bulk acoustic wave resonator according to an exemplary embodiment of the present invention, which shows that both the upper surface of the first top electrode and the second top electrode are provided with a passivation layer, and the ion beam passes through the frequency adjustment The channel bombards the passivation layer on the first top electrode;
  • Fig. 7 is a schematic cross-sectional view of a bulk acoustic wave resonator according to an exemplary embodiment of the present invention, wherein the package of the resonator is schematically shown;
  • FIG. 8 is a flowchart of a packaging method of a bulk acoustic wave resonator according to an exemplary embodiment of the present invention.
  • FIG. 9 is a schematic cross-sectional view of a single product of wafer-level packaging in an existing design, which shows a packaging structure formed by using a packaging wafer;
  • Fig. 10 is a schematic cross-sectional view of a previously designed bulk acoustic wave resonator.
  • FIG. 1 is a schematic top view of a bulk acoustic wave resonator according to an exemplary embodiment of the present invention
  • FIG. 2 is a schematic cross-sectional view of the bulk acoustic wave resonator according to an exemplary embodiment of the present invention taken along the AB broken line in FIG. 1 , which shows the encapsulation layer of the resonator.
  • the reference signs are as follows:
  • Substrate, optional materials are monocrystalline silicon, gallium arsenide, sapphire, quartz, etc.
  • Acoustic mirror which can be a cavity or Bragg reflector or other equivalent forms.
  • Bottom electrode (including electrode pins).
  • the material can be molybdenum, ruthenium, gold, aluminum, magnesium, tungsten, copper, titanium, iridium, osmium, chromium, or a combination of the above metals or their alloys.
  • Piezoelectric film layer piezoelectric layer
  • optional aluminum nitride AlN
  • zinc oxide ZnO
  • lead zirconate titanate PZT
  • lithium niobate LiNbO 3
  • quartz Quartz
  • niobic acid Materials such as potassium (KNbO 3 ) or lithium tantalate (LiTaO 3 ) may also contain rare earth element doped materials with a certain atomic ratio of the material.
  • the first top electrode of the top electrode (including the electrode pins).
  • the material can be molybdenum, ruthenium, gold, aluminum, magnesium, tungsten, copper, titanium, iridium, osmium, chromium, or a combination of the above metals or their alloys.
  • Protective layer which can be PI glue (polyimide) or other protective materials.
  • Waterproof layer or sealing layer which can be perfluorotrichlorosilane (FDTS) or silicon nitride, or other waterproof materials.
  • the high crystal orientation seed layer which can be AlN, is used as a barrier layer or passivation layer for the patterning of the void layer.
  • the upper conductive layer or the second top electrode of the top electrode can be molybdenum, ruthenium, gold, aluminum, magnesium, tungsten, copper, titanium, iridium, osmium, chromium, or a combination of the above metals or their alloys.
  • High crystal orientation seed layer which can be AlN or the like.
  • the air gap constitutes a void layer
  • the void layer may be a vacuum gap layer in addition to an air gap layer, or a void layer filled with another gas medium.
  • the seed layer 113 may not be provided.
  • FIGS. 4-6 show a specific structure to realize simple, accurate or effective frequency adjustment, that is, a frequency adjustment channel 109 is provided on the second top electrode 112.
  • Fig. 4 is an array diagram of frequency adjustment channels 109 of a bulk acoustic wave resonator according to an exemplary embodiment of the present invention.
  • 5 is a schematic cross-sectional view of a bulk acoustic wave resonator according to an exemplary embodiment of the present invention, which shows that the ion beam bombards the first top electrode through the frequency adjustment channel.
  • FIG. 6 is a schematic cross-sectional view of a bulk acoustic wave resonator according to an exemplary embodiment of the present invention, which shows that both the upper surface of the first top electrode and the second top electrode are provided with a passivation layer, and the ion beam passes through the frequency adjustment The channel bombards the passivation layer on the first top electrode.
  • the ion beam can form an array of pits with additional acoustic significance on the first top electrode 105 (as shown in FIG. 5) to suppress the parasitic mode;
  • a balance can be found between the top electrode resistance and the frequency trimming efficiency.
  • a plurality of frequency shaping channels 109 are arranged in a predetermined pattern.
  • the predetermined pattern is an array pattern.
  • the frequency shaping channel 109 may be embodied as a through hole.
  • the predetermined pattern is a divergent pattern. That is, a number of through holes 109 on the second top electrode 112 are regularly arranged in an array, and the ratio of the total area occupied by the through holes 109 to the remaining effective area of the second top electrode 112 is within a predetermined range.
  • the sensitivity of the trimming frequency can be adjusted by adjusting the total area of the through hole 109. In principle, the larger the total area, the higher the sensitivity. However, if the duty cycle is too low, it is not conducive to frequency repair. If the duty cycle is too high, the electrode resistance will increase.
  • the area ratio of the frequency shaping channel to the effective area of the resonator may be further considered. In an optional embodiment, the ratio range of the multiple frequency shaping channels to the effective area of the resonator is It is 10%-90%, and further, in the range of 30%-75%.
  • first top electrode 105 and the second top electrode 112 it is also possible to directly expose the first top electrode 105 and the second top electrode 112 to the air to cause oxidation and increase their resistance.
  • ion beam bombardment will increase the first top electrode 105.
  • the surface roughness accelerates electrode oxidation.
  • passivation layers 110 and 106 may be deposited on the upper surfaces of the first top electrode 105 and the second top electrode 112, respectively, as shown in FIG. 6, while the through holes 109 pass through the passivation layer 106. That is, the passivation layer 110 may be deposited on the upper surface of the first top electrode 105.
  • a passivation layer 106 may also be deposited on the upper surface of the second top electrode 112, and the frequency adjustment channel 109 penetrates the passivation layer 106.
  • the ion beam passes through the passivation layer 106 and the second top electrode 112 from the through hole 109 and bombards the passivation layer 110 on the surface of the first top electrode 105, and the ion beam bombards the passivation layer 110 on the surface of the first top electrode 105.
  • a pit is formed in the passivation layer 110, and the first bottom electrode 105 located under the passivation layer 110 is not affected by the ion beam.
  • the first top electrode 105 is formed with a number of pits corresponding to the frequency adjustment channel. Specifically, when the ion beam is used for frequency trimming, the ion beam can pass through the second top electrode 112 by the through hole array, bombard the surface of the first top electrode 105, and form an array of pits thereon, thereby removing the first top electrode. Part of the material of 105 achieves the purpose of increasing the frequency.
  • the frequency shaping channel located at the second top electrode 112 can also serve as a release channel for making the air gap or gap layer 111 of the top electrode.
  • the second top electrode or the second passivation layer provided on the second top electrode can be thinned.
  • the mentioned numerical range can be not only the endpoint value, but also the median value between the endpoint values or other values, all of which fall within the protection scope of the present invention.
  • the top electrode contains a void layer.
  • This method of moving the upper acoustic reflection layer to the inside of the top electrode allows the top electrode to continue to add a protective structure without affecting the frequency of the resonator.
  • the waterproof and physical contact function of the entire device is realized (that is, the package is completed), as shown in the figure 7 shown.
  • FIG. 9 shows a cross-sectional schematic diagram of a single product of wafer-level packaging in an existing design, which shows a packaging structure formed by using a packaging wafer.
  • a packaging wafer 202 is provided, and a sealing ring structure 203 provided between the packaging wafer 202 and the substrate 201 is provided.
  • the advantage of the embodiment shown in FIG. 7 is that the filter product composed of such resonators does not need to add additional wafer-level packaging (microcap), thereby reducing the size and reduction of such products. cost. More specifically, the wafer-level packaging process is eliminated, and because wafer-level packaging is not required, and the sealing ring structure 203 around a single product can be eliminated, the overall size of a single product can be reduced.
  • the present invention proposes a protection structure for a bulk acoustic wave resonator.
  • the top electrode of the bulk acoustic wave resonator is a gap electrode or contains a gap layer, thereby reducing the cost and size by eliminating the microcap process.
  • the resonator is provided with a frequency adjustment channel 109, however, the frequency adjustment channel may not be provided, as shown in FIG. 3.
  • Other ways can be used to adjust the frequency of the resonator.
  • the protective layer 107 may not be provided, but the sealing layer 108 directly seals the frequency adjustment channel 109.
  • the present invention also proposes a packaging method for a bulk acoustic wave resonator whose top electrode is a gap electrode with a gap layer.
  • Fig. 8 is an exemplary embodiment of the above-mentioned packaging method.
  • the packaging method of a bulk acoustic wave resonator in which the top electrode is a gap electrode with a gap layer includes the following steps:
  • step S1 setting a protective layer on at least a part of the upper surface of the passivation layer of the second top electrode, so that the protective layer covers the upper opening of the frequency trimming channel;
  • step S2 Setting a sealing layer (step S2): covering the upper side of the resonator device with a sealing layer, the sealing layer constitutes an encapsulation layer of the resonator device, and the sealing layer covers the protective layer.
  • the packaging method may only include the steps of: providing a sealing layer on the upper side of the bulk acoustic wave resonator whose top electrode is a gap electrode with a gap layer To form the packaging structure layer of the bulk acoustic wave resonator.
  • a bulk acoustic wave resonator including:
  • the top electrode includes a first top electrode and a second top electrode, the first top electrode is attached to the piezoelectric layer, and a gap layer is formed between the first top electrode and the second top electrode in the thickness direction of the resonator between;
  • the sealing layer covers at least the upper side of the effective area of the resonator to constitute an encapsulation layer of the resonator.
  • the second top electrode is provided with a plurality of frequency trimming channels in the effective area of the resonator, the frequency trimming channel penetrates the second top electrode, and the lower opening of the frequency trimming channel communicates with the gap layer.
  • the resonator further includes a protective layer covering the upper opening of the frequency trimming channel, and the sealing layer covering the protective layer.
  • the protective layer covers the upper surface of the second top electrode.
  • the upper surface of the second top electrode is provided with a second passivation layer, the frequency adjustment channel penetrates the second passivation layer, and the protective layer covers at least a part of the second passivation layer.
  • the material of the protective layer is polyimide.
  • the plurality of frequency shaping channels are arranged in a predetermined pattern.
  • a number of pits corresponding to the frequency adjustment channel are formed on the upper surface of the first top electrode.
  • a first passivation layer is deposited on the upper surface of the first top electrode.
  • the first passivation layer is formed with a number of pits corresponding to the frequency adjustment channel.
  • the material of the sealing layer is perfluorotrichlorosilane or silicon nitride.
  • a filter comprising the bulk acoustic wave resonator according to any one of claims 1-11.
  • An electronic device comprising the bulk acoustic wave resonator according to any one of 1-11 or the filter according to claim 12.
  • a method for packaging a bulk acoustic wave resonator comprising a resonator device, the resonator device comprising: a top electrode; a piezoelectric layer; a bottom electrode; and an acoustic mirror, wherein: the top electrode It includes a first top electrode and a second top electrode, the first top electrode is attached to the piezoelectric layer, and a gap layer is formed between the first top electrode and the second top electrode in the thickness direction of the resonator, so The method includes the steps:
  • a sealing layer is covered on the upper side of the resonator device, and the sealing layer constitutes an encapsulation layer of the resonator device.
  • the second top electrode is provided with a plurality of frequency trimming channels in the effective area of the resonator, the frequency trimming channel penetrates the second top electrode, and the lower opening of the frequency trimming channel communicates with the gap layer;
  • the method further includes the step of: disposing a protective layer on the upper surface of the second top electrode, the protective layer covering the upper opening of the frequency trimming channel;
  • the sealing layer covers the protective layer.
  • the second top electrode is provided with a plurality of frequency trimming channels in the effective area of the resonator, a second passivation layer is provided on the upper surface of the second top electrode, and the frequency trimming channels penetrate the second top electrode and the The second passivation layer, the lower opening of the frequency trimming channel communicates with the gap layer;
  • the method further includes the step of: disposing a protective layer on at least a part of the upper surface of the second passivation layer, the protective layer covering the upper opening of the frequency trimming channel;
  • the sealing layer covers the protective layer.

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  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)

Abstract

Disclosed is a bulk acoustic wave resonator, comprising a top electrode, a piezoelectric layer, a bottom electrode, an acoustic mirror and a sealing layer, wherein the top electrode comprises a first top electrode and a second top electrode, the first top electrode is attached to the piezoelectric layer, and a gap layer is formed between the first top electrode and the second top electrode in the thickness direction of the resonator; and the sealing layer at least covers the upper side of an effective area of the resonator to form an encapsulation layer of the resonator. Further disclosed are an encapsulation method for the bulk acoustic resonator, a filter, and an electronic device.

Description

体声波谐振器及其封装方法、滤波器、电子设备Bulk acoustic wave resonator and its packaging method, filter and electronic equipment 技术领域Technical field
本发明的实施例涉及半导体领域，尤其涉及一种体声波谐振器、一种具有该谐振器的滤波器，以及一种具有该谐振器或者该滤波器的电子设备，一种体声波谐振器的封装方法。The embodiments of the present invention relate to the semiconductor field, and in particular to a bulk acoustic wave resonator, a filter having the resonator, and an electronic device having the resonator or the filter, and a bulk acoustic wave resonator. Packaging method.
背景技术Background technique
体声波谐振器广泛应用于现代通讯领域的各类电子元器件中，如滤波器，双工器等等。为了保护例如FBAR(film bulk acoustic resonator，薄膜体声波谐振器)产品使其隔绝外部环境(如颗粒和水汽)的影响，需要对FBAR产品进行晶圆级封装。图9示出了已有设计中对单颗产品的晶圆级封装的剖面示意图，其中附图标记表示如下：201：产品片基底；202：封装晶圆(Cap wafer)，用于保护器件(205)；203：密封圈结构；204：器件信号引出的焊盘(pad)；205：器件，例如滤波器有效区域；206：谐振器与焊盘之间的金属连接；207：金属导通的通孔(Via)；208：引脚。Bulk acoustic wave resonators are widely used in various electronic components in the modern communication field, such as filters, duplexers, and so on. In order to protect products such as FBAR (film bulk acoustic resonator) from the influence of the external environment (such as particles and water vapor), wafer-level packaging of FBAR products is required. Figure 9 shows a schematic cross-sectional view of wafer-level packaging of a single product in an existing design, where the reference numerals are indicated as follows: 201: product wafer base; 202: cap wafer, used to protect the device ( 205); 203: sealing ring structure; 204: pad from which the device signal is drawn; 205: device, such as the effective area of the filter; 206: metal connection between the resonator and the pad; 207: metal conduction Through hole (Via); 208: pin.
在图9中，因为晶圆级封装需要在FBAR产品有效区域以外额外增加密封圈结构203，所以产品的尺寸会因此大幅增大。这对于半导体器件的小型化是不利的。In FIG. 9, because the wafer level packaging requires an additional sealing ring structure 203 outside the effective area of the FBAR product, the size of the product will be greatly increased. This is detrimental to the miniaturization of semiconductor devices.
此外，该类半导体器件对其中每个体波谐振器的工作频率通常有严格甚至苛刻的要求。而在设计尺寸完全相同的情况下，一片晶圆上实际加工出来的谐振器很难保证其谐振频率达到指标工作频率，片内的每两个谐振器的电极/压电层厚度、电极压电层的大小和形状均会存在一定范围内的差异。由所述事实可知，由前期MEMS工序初步得到的体波谐振器通常会有一部分频率会落到指标允许范围之外。如果简单地抛弃这部分谐振器，则会导致降低产能，变相提高成本。因此通常采取一定的工艺方法，对不符合频率要求的谐振器进行修整，使修整后的频率落入指标要求范围。In addition, this type of semiconductor device usually has strict or even harsh requirements on the operating frequency of each bulk wave resonator. However, when the design dimensions are exactly the same, it is difficult for the resonator actually processed on a wafer to ensure that its resonant frequency reaches the target operating frequency. The electrode/piezoelectric layer thickness and electrode piezoelectricity of every two resonators in the wafer The size and shape of the layers will vary within a certain range. From the above facts, it can be known that the bulk wave resonator initially obtained from the previous MEMS process usually has a part of the frequency that falls outside the allowable range of the index. If you simply abandon this part of the resonator, it will lead to a reduction in production capacity and a disguised increase in cost. Therefore, a certain process is usually adopted to trim the resonator that does not meet the frequency requirements, so that the trimmed frequency falls within the range of the index requirements.
对于频率低于指标要求的传统结构谐振器(电极无空气间隙)，目前常用的频率修整方法是使用离子束轰击顶电极或位于顶电极上表面其它 的工艺层，来去除一部分电极或工艺层材料，去除材料后由于谐振器的质量负载变小，其谐振频率会升高，从而达到频率修整的效果。For traditional structural resonators whose frequency is lower than the index requirement (the electrode has no air gap), the current commonly used frequency trimming method is to use ion beams to bombard the top electrode or other process layers on the upper surface of the top electrode to remove part of the electrode or process layer material After the material is removed, as the mass load of the resonator becomes smaller, its resonant frequency will increase, so as to achieve the effect of frequency trimming.
但是，所述传统修频方法并不普遍适用于某些谐振器结构。However, the traditional frequency modification method is not universally applicable to certain resonator structures.
发明内容Summary of the invention
针对顶电极含有空气间隙的体波谐振器，本发明提出一种封装方案。Aiming at the bulk wave resonator with an air gap in the top electrode, the present invention proposes a packaging solution.
根据本发明的实施例的一个方面，提出一种体声波谐振器，包括According to an aspect of the embodiments of the present invention, a bulk acoustic wave resonator is provided, including
顶电极；Top electrode
压电层；Piezoelectric layer
底电极；Bottom electrode
声学镜；以及Acoustic mirror; and
密封层，Sealing layer,
其中：among them:
所述顶电极包括第一顶电极和第二顶电极，所述第一顶电极贴附于所述压电层，在谐振器的厚度方向上间隙层形成在第一顶电极与第二顶电极之间；The top electrode includes a first top electrode and a second top electrode, the first top electrode is attached to the piezoelectric layer, and a gap layer is formed between the first top electrode and the second top electrode in the thickness direction of the resonator between;
所述密封层至少覆盖所述谐振器的有效区域的上侧以构成谐振器的封装层。The sealing layer covers at least the upper side of the effective area of the resonator to constitute an encapsulation layer of the resonator.
根据本发明的实施例的另一方面，提出了所述体声波谐振器包括谐振器器件，所述谐振器器件包括：顶电极；压电层；底电极；和声学镜，其中：所述顶电极包括第一顶电极和第二顶电极，所述第一顶电极贴附于所述压电层，在谐振器的厚度方向上间隙层形成在第一顶电极与第二顶电极之间，所述方法包括步骤：According to another aspect of the embodiment of the present invention, it is proposed that the bulk acoustic wave resonator includes a resonator device, the resonator device includes: a top electrode; a piezoelectric layer; a bottom electrode; and an acoustic mirror, wherein: the top The electrode includes a first top electrode and a second top electrode, the first top electrode is attached to the piezoelectric layer, and a gap layer is formed between the first top electrode and the second top electrode in the thickness direction of the resonator, The method includes the steps:
在所述谐振器器件的上侧覆盖密封层，所述密封层构成所述谐振器器件的封装层。A sealing layer is covered on the upper side of the resonator device, and the sealing layer constitutes an encapsulation layer of the resonator device.
本发明的实施例也涉及一种具有上述谐振器的滤波器，以及具有上述谐振器或者滤波器的电子设备。The embodiment of the present invention also relates to a filter having the above-mentioned resonator, and an electronic device having the above-mentioned resonator or filter.
附图说明Description of the drawings
以下描述与附图可以更好地帮助理解本发明所公布的各种实施例中 的这些和其他特点、优点，图中相同的附图标记始终表示相同的部件，其中：The following description and the accompanying drawings can better help understand these and other features and advantages in the various embodiments disclosed in the present invention. The same reference numerals in the figures always refer to the same components, in which:
图1为根据本发明的一个示例性实施例的体声波谐振器的俯视示意图；Fig. 1 is a schematic top view of a bulk acoustic wave resonator according to an exemplary embodiment of the present invention;
图2为根据本发明的一个示例性实施例的体声波谐振器的沿图1中的A-B折线所得的剖面示意图，其中示出了该谐振器的封装层；FIG. 2 is a schematic cross-sectional view of a bulk acoustic wave resonator according to an exemplary embodiment of the present invention taken along the A-B fold line in FIG. 1, which shows the packaging layer of the resonator;
图3为根据本发明的另一个示例性实施例的体声波谐振器的剖面示意图；3 is a schematic cross-sectional view of a bulk acoustic wave resonator according to another exemplary embodiment of the present invention;
图4为根据本发明的一个示例性实施例的体声波谐振器的频率调整通道阵列图；4 is a diagram of an array of frequency adjustment channels of a bulk acoustic wave resonator according to an exemplary embodiment of the present invention;
图5为根据本发明的一个示例性实施例的体声波谐振器的剖面示意图，其中示出了离子束通过频率调整通道轰击第一顶电极；5 is a schematic cross-sectional view of a bulk acoustic wave resonator according to an exemplary embodiment of the present invention, which shows that the ion beam bombards the first top electrode through the frequency adjustment channel;
图6为根据本发明的一个示例性实施例的体声波谐振器的剖面示意图，其中示出了第一顶电极和第二顶电极的上表面均设置有钝化层，且离子束通过频率调整通道轰击第一顶电极上的钝化层；6 is a schematic cross-sectional view of a bulk acoustic wave resonator according to an exemplary embodiment of the present invention, which shows that both the upper surface of the first top electrode and the second top electrode are provided with a passivation layer, and the ion beam passes through the frequency adjustment The channel bombards the passivation layer on the first top electrode;
图7为根据本发明的一个示例性实施例的体声波谐振器的剖面示意图，其中示意性示出了该谐振器的封装；Fig. 7 is a schematic cross-sectional view of a bulk acoustic wave resonator according to an exemplary embodiment of the present invention, wherein the package of the resonator is schematically shown;
图8为根据本发明的一个示例性实施例的体声波谐振器的封装方法的流程图；FIG. 8 is a flowchart of a packaging method of a bulk acoustic wave resonator according to an exemplary embodiment of the present invention;
图9为已有设计中晶圆级封装单颗产品的剖面示意图，其中示出了利用封装晶圆形成的封装结构；FIG. 9 is a schematic cross-sectional view of a single product of wafer-level packaging in an existing design, which shows a packaging structure formed by using a packaging wafer;
图10为已有设计的体声波谐振器的剖面示意图。Fig. 10 is a schematic cross-sectional view of a previously designed bulk acoustic wave resonator.
具体实施方式Detailed ways
下面通过实施例，并结合附图，对本发明的技术方案作进一步具体的说明。在说明书中，相同或相似的附图标号指示相同或相似的部件。下述参照附图对本发明实施方式的说明旨在对本发明的总体发明构思进行解释，而不应当理解为对本发明的一种限制。In the following, the technical solution of the present invention will be further described in detail through the embodiments and in conjunction with the accompanying drawings. In the specification, the same or similar reference numerals indicate the same or similar components. The following description of the embodiments of the present invention with reference to the accompanying drawings is intended to explain the general inventive concept of the present invention, and should not be construed as a limitation to the present invention.
图1为根据本发明的一个示例性实施例的体声波谐振器的俯视示意图；图2为根据本发明的一个示例性实施例的体声波谐振器的沿图1中的A-B折线所得的剖面示意图，其中示出了该谐振器的封装层。在图1和图2中，各附图标记如下：FIG. 1 is a schematic top view of a bulk acoustic wave resonator according to an exemplary embodiment of the present invention; FIG. 2 is a schematic cross-sectional view of the bulk acoustic wave resonator according to an exemplary embodiment of the present invention taken along the AB broken line in FIG. 1 , Which shows the encapsulation layer of the resonator. In Figures 1 and 2, the reference signs are as follows:
101：基底，可选材料为单晶硅、砷化镓、蓝宝石、石英等。101: Substrate, optional materials are monocrystalline silicon, gallium arsenide, sapphire, quartz, etc.
102：声学镜，可为空腔，也可采用布拉格反射层及其他等效形式。102: Acoustic mirror, which can be a cavity or Bragg reflector or other equivalent forms.
103：底电极(包括电极引脚)，材料可选钼、钌、金、铝、镁、钨、铜，钛、铱、锇、铬或以上金属的复合或其合金等。103: Bottom electrode (including electrode pins). The material can be molybdenum, ruthenium, gold, aluminum, magnesium, tungsten, copper, titanium, iridium, osmium, chromium, or a combination of the above metals or their alloys.
104：压电薄膜层(压电层)，可选氮化铝(AlN)、氧化锌(ZnO)、锆钛酸铅(PZT)、铌酸锂(LiNbO 3)、石英(Quartz)、铌酸钾(KNbO 3)或钽酸锂(LiTaO 3)等材料，也可包含所述材料的一定原子比的稀土元素掺杂材料。 104: Piezoelectric film layer (piezoelectric layer), optional aluminum nitride (AlN), zinc oxide (ZnO), lead zirconate titanate (PZT), lithium niobate (LiNbO 3 ), quartz (Quartz), niobic acid Materials such as potassium (KNbO 3 ) or lithium tantalate (LiTaO 3 ) may also contain rare earth element doped materials with a certain atomic ratio of the material.
105：顶电极(包括电极引脚)的第一顶电极，材料可选钼、钌、金、铝、镁、钨、铜，钛、铱、锇、铬或以上金属的复合或其合金等。105: The first top electrode of the top electrode (including the electrode pins). The material can be molybdenum, ruthenium, gold, aluminum, magnesium, tungsten, copper, titanium, iridium, osmium, chromium, or a combination of the above metals or their alloys.
106：顶电极表面的钝化层。106: The passivation layer on the surface of the top electrode.
107：保护层，可以为PI胶(聚酰亚胺)，也可以为其他保护材料。107: Protective layer, which can be PI glue (polyimide) or other protective materials.
108：防水层或密封层，可以为全氟代三氯硅烷(FDTS)或氮化硅,已可以为其他防水材料。108: Waterproof layer or sealing layer, which can be perfluorotrichlorosilane (FDTS) or silicon nitride, or other waterproof materials.
109：顶电极形成的直达空隙层(111)的通孔，该通孔为实现频率调整的频率调整通道。109: A through hole formed by the top electrode that reaches the gap layer (111), and the through hole is a frequency adjustment channel for realizing frequency adjustment.
110：高晶向种子层，可以是AlN，用来做空隙层图形化的阻挡层或钝化层。110: The high crystal orientation seed layer, which can be AlN, is used as a barrier layer or passivation layer for the patterning of the void layer.
111：顶电极内的空气间隙或空隙层。111: The air gap or void layer in the top electrode.
112：上导电层或顶电极的第二顶电极，材料可选钼、钌、金、铝、镁、钨、铜，钛、铱、锇、铬或以上金属的复合或其合金等。112: The upper conductive layer or the second top electrode of the top electrode. The material can be molybdenum, ruthenium, gold, aluminum, magnesium, tungsten, copper, titanium, iridium, osmium, chromium, or a combination of the above metals or their alloys.
113：高晶向种子层，可以是AlN等。113: High crystal orientation seed layer, which can be AlN or the like.
需要说明的是，空气间隙构成空隙层，但是本发明中，空隙层除了可以为空气间隙层之外，还可以是真空间隙层，也可以是填充了其他气体介质的空隙层。It should be noted that the air gap constitutes a void layer, but in the present invention, the void layer may be a vacuum gap layer in addition to an air gap layer, or a void layer filled with another gas medium.
在本发明中，也可以不设置种子层113。In the present invention, the seed layer 113 may not be provided.
因为如图10所示，当顶电极中具有空气间隙时，离子束会轰击到第二顶电极112上并以移除所述电极部分材料，但实验结果和理论分析均表明，由于空气间隙111的隔离作用，第二顶电极112质量的改变无法有效调整谐振器的频率，即第二顶电极112的厚度对谐振器谐振频率影响的灵敏度非常低。Because as shown in FIG. 10, when there is an air gap in the top electrode, the ion beam will bombard the second top electrode 112 to remove part of the electrode material, but both experimental results and theoretical analysis show that due to the air gap 111 Due to the isolation effect of the second top electrode 112, the quality of the second top electrode 112 cannot effectively adjust the frequency of the resonator, that is, the thickness of the second top electrode 112 has very low sensitivity to the resonant frequency of the resonator.
图2以及图4-6中示出了一种特定结构以实现简单精确或有效的频率调整，即在第二顶电极112上设置频率调整通道109。图4为根据本发明的一个示例性实施例的体声波谐振器的频率调整通道109的阵列图。图5为根据本发明的一个示例性实施例的体声波谐振器的剖面示意图，其中示出了离子束通过频率调整通道轰击第一顶电极。图6为根据本发明的一个示例性实施例的体声波谐振器的剖面示意图，其中示出了第一顶电极和第二顶电极的上表面均设置有钝化层，且离子束通过频率调整通道轰击第一顶电极上的钝化层。2 and FIGS. 4-6 show a specific structure to realize simple, accurate or effective frequency adjustment, that is, a frequency adjustment channel 109 is provided on the second top electrode 112. Fig. 4 is an array diagram of frequency adjustment channels 109 of a bulk acoustic wave resonator according to an exemplary embodiment of the present invention. 5 is a schematic cross-sectional view of a bulk acoustic wave resonator according to an exemplary embodiment of the present invention, which shows that the ion beam bombards the first top electrode through the frequency adjustment channel. 6 is a schematic cross-sectional view of a bulk acoustic wave resonator according to an exemplary embodiment of the present invention, which shows that both the upper surface of the first top electrode and the second top electrode are provided with a passivation layer, and the ion beam passes through the frequency adjustment The channel bombards the passivation layer on the first top electrode.
通过设计第二顶电极112上的通孔阵列图案，一方面可以使离子束在第一顶电极105上形成具有额外声学意义的凹坑阵列(如图5所示)，用于抑制寄生模式；另一方面还可在顶电极电阻和修频效率之间寻求平衡。By designing the through hole array pattern on the second top electrode 112, on the one hand, the ion beam can form an array of pits with additional acoustic significance on the first top electrode 105 (as shown in FIG. 5) to suppress the parasitic mode; On the other hand, a balance can be found between the top electrode resistance and the frequency trimming efficiency.
在可选的实施例中，如图4所示，多个频率修整通道109呈预定图案布置。如在图4中所示，所述预定图案为阵列图案。In an alternative embodiment, as shown in FIG. 4, a plurality of frequency shaping channels 109 are arranged in a predetermined pattern. As shown in FIG. 4, the predetermined pattern is an array pattern.
频率修整通道109可以具体化为通孔。The frequency shaping channel 109 may be embodied as a through hole.
虽然没有示出，所述预定图案为发散状图案。即第二顶电极112上的若干通孔109一定规律排成阵列，通孔109占据的总面积与第二顶电极112剩余的有效面积比值在预定范围内。Although not shown, the predetermined pattern is a divergent pattern. That is, a number of through holes 109 on the second top electrode 112 are regularly arranged in an array, and the ratio of the total area occupied by the through holes 109 to the remaining effective area of the second top electrode 112 is within a predetermined range.
可以通过调整通孔109的总面积以调整修整频率的灵敏度，原则上总面积越大，灵敏度越高。但是占空比过低不利于修频，占空比过高电极电阻会变大。在本发明的进一步的实施例中，可以进一步考虑频率修整通道占谐振器的有效区域的面积比，在可选的实施例中，所述多个频率修整通道占谐振器有效区域面积的比例范围是10％-90％，进一步的，在30％-75％的范围内。The sensitivity of the trimming frequency can be adjusted by adjusting the total area of the through hole 109. In principle, the larger the total area, the higher the sensitivity. However, if the duty cycle is too low, it is not conducive to frequency repair. If the duty cycle is too high, the electrode resistance will increase. In a further embodiment of the present invention, the area ratio of the frequency shaping channel to the effective area of the resonator may be further considered. In an optional embodiment, the ratio range of the multiple frequency shaping channels to the effective area of the resonator is It is 10%-90%, and further, in the range of 30%-75%.
在可选的实施例中，也可直接将第一顶电极105和第二顶电极112 暴露在空气中会导致其氧化，并使其电阻变大，此外离子束轰击会增加第一顶电极105的表面粗糙度，加速电极氧化。为了防止电极氧化，可如图6所示在第一顶电极105和第二顶电极112的上表面分别沉积钝化层110和106，同时使通孔109穿过钝化层106。即，第一顶电极105上表面可沉积有钝化层110。另外，第二顶电极112上表面也可沉积有钝化层106，且所述频率调整通道109贯穿所述钝化层106。In an alternative embodiment, it is also possible to directly expose the first top electrode 105 and the second top electrode 112 to the air to cause oxidation and increase their resistance. In addition, ion beam bombardment will increase the first top electrode 105. The surface roughness accelerates electrode oxidation. In order to prevent the electrode from being oxidized, passivation layers 110 and 106 may be deposited on the upper surfaces of the first top electrode 105 and the second top electrode 112, respectively, as shown in FIG. 6, while the through holes 109 pass through the passivation layer 106. That is, the passivation layer 110 may be deposited on the upper surface of the first top electrode 105. In addition, a passivation layer 106 may also be deposited on the upper surface of the second top electrode 112, and the frequency adjustment channel 109 penetrates the passivation layer 106.
如图6所示，进行离子束修频时，离子束从通孔109穿过钝化层106和第二顶电极112轰击在位于第一顶电极105表面的钝化层110上，离子束轰击在钝化层110形成凹坑，而位于钝化层110下方的第一底电极105则不受离子束影响。As shown in FIG. 6, when performing ion beam frequency modification, the ion beam passes through the passivation layer 106 and the second top electrode 112 from the through hole 109 and bombards the passivation layer 110 on the surface of the first top electrode 105, and the ion beam bombards the passivation layer 110 on the surface of the first top electrode 105. A pit is formed in the passivation layer 110, and the first bottom electrode 105 located under the passivation layer 110 is not affected by the ion beam.
同时，也可如图5所示，第一顶电极105形成有与所述频率调整通道相对应的若干凹坑。具体地，当利用离子束进行修频时，离子束可由通孔阵列穿过第二顶电极112，轰击到第一顶电极105表面，并在其上形成凹坑阵列，从而去除第一顶电极105的部分材料，达到提升频率的目的。At the same time, as shown in FIG. 5, the first top electrode 105 is formed with a number of pits corresponding to the frequency adjustment channel. Specifically, when the ion beam is used for frequency trimming, the ion beam can pass through the second top electrode 112 by the through hole array, bombard the surface of the first top electrode 105, and form an array of pits thereon, thereby removing the first top electrode. Part of the material of 105 achieves the purpose of increasing the frequency.
如图5和6所示，位于第二顶电极112的频率修整通道还可以充当释放通道，用于制作顶电极的空气间隙或空隙层111。As shown in FIGS. 5 and 6, the frequency shaping channel located at the second top electrode 112 can also serve as a release channel for making the air gap or gap layer 111 of the top electrode.
需要指出的是，离子束轰击时，可以使得第二顶电极或设置于第二顶电极上的第二钝化层减薄。It should be pointed out that when the ion beam is bombarded, the second top electrode or the second passivation layer provided on the second top electrode can be thinned.
在本发明中，提到的数值范围除了可以为端点值之外，还可以为端点值之间的中值或者其他值，均在本发明的保护范围之内。In the present invention, the mentioned numerical range can be not only the endpoint value, but also the median value between the endpoint values or other values, all of which fall within the protection scope of the present invention.
在图1与图2所示的实施例中，顶电极中含有空隙层，这种将上声学反射层移至顶电极内部的方法致使在顶电极可以继续增加保护结构而不影响谐振器频率。在此前提的基础上通过对第二顶电极上的频率调整通道进行覆盖处理，然后再对整个器件进行防水层材料喷涂，从而实现整体器件防水防物理接触的功能(即完成封装)，如图7所示。In the embodiment shown in FIG. 1 and FIG. 2, the top electrode contains a void layer. This method of moving the upper acoustic reflection layer to the inside of the top electrode allows the top electrode to continue to add a protective structure without affecting the frequency of the resonator. On the basis of this premise, by covering the frequency adjustment channel on the second top electrode, and then spraying the waterproof layer material on the entire device, the waterproof and physical contact function of the entire device is realized (that is, the package is completed), as shown in the figure 7 shown.
图9所示的已有设计中晶圆级封装单颗产品的剖面示意图，其中示出了利用封装晶圆形成的封装结构。在图9中，设置有封装晶圆202，以及设置在封装晶圆202与基底201之间的密封环结构203。FIG. 9 shows a cross-sectional schematic diagram of a single product of wafer-level packaging in an existing design, which shows a packaging structure formed by using a packaging wafer. In FIG. 9, a packaging wafer 202 is provided, and a sealing ring structure 203 provided between the packaging wafer 202 and the substrate 201 is provided.
相较于图9所示的结构，图7所示的实施例的优势在于由此种谐振器组成的滤波器产品无需额外增加晶圆级封装(microcap)，从而缩小此 类产品的尺寸以及降低成本。更具体的，去除了晶圆级封装的工艺，而且因为无需晶圆级封装，而且单颗产品周围的密封环结构203可以消除，从而可以减小单颗产品的总体尺寸。Compared with the structure shown in FIG. 9, the advantage of the embodiment shown in FIG. 7 is that the filter product composed of such resonators does not need to add additional wafer-level packaging (microcap), thereby reducing the size and reduction of such products. cost. More specifically, the wafer-level packaging process is eliminated, and because wafer-level packaging is not required, and the sealing ring structure 203 around a single product can be eliminated, the overall size of a single product can be reduced.
因此，本发明提出了一种体声波谐振器保护结构，该体声波谐振器的顶电极为间隙电极或含有空隙层，从而通过消除晶圆级封装(microcap)工艺来降低成本及缩小尺寸。Therefore, the present invention proposes a protection structure for a bulk acoustic wave resonator. The top electrode of the bulk acoustic wave resonator is a gap electrode or contains a gap layer, thereby reducing the cost and size by eliminating the microcap process.
需要指出的是，在图2所示的实施例中，谐振器设置有频率调整通道109，但是，也可以不设置频率调整通道，如图3所示。可以采用其他的方式进行谐振器的频率调整。It should be pointed out that in the embodiment shown in FIG. 2, the resonator is provided with a frequency adjustment channel 109, however, the frequency adjustment channel may not be provided, as shown in FIG. 3. Other ways can be used to adjust the frequency of the resonator.
在可选的实施例中，在图2的实施例中，也可以不设置保护层107，而是直接由密封层108直接密封频率调整通道109。In an alternative embodiment, in the embodiment of FIG. 2, the protective layer 107 may not be provided, but the sealing layer 108 directly seals the frequency adjustment channel 109.
本发明也提出了一种顶电极为具有空隙层的间隙电极的体声波谐振器的封装方法。图8为上述封装方法的一个示例性实施例。The present invention also proposes a packaging method for a bulk acoustic wave resonator whose top electrode is a gap electrode with a gap layer. Fig. 8 is an exemplary embodiment of the above-mentioned packaging method.
如图8所示，顶电极为具有空隙层的间隙电极的体声波谐振器的封装方法包括步骤：As shown in FIG. 8, the packaging method of a bulk acoustic wave resonator in which the top electrode is a gap electrode with a gap layer includes the following steps:
设置保护层(步骤S1)：在第二顶电极的钝化层的上表面的至少一部分设置保护层，使得所述保护层覆盖所述频率修整通道的上开口；和Setting a protective layer (step S1): setting a protective layer on at least a part of the upper surface of the passivation layer of the second top electrode, so that the protective layer covers the upper opening of the frequency trimming channel; and
设置密封层(步骤S2)：在所述谐振器器件的上侧覆盖密封层，所述密封层构成所述谐振器器件的封装层，所述密封层覆盖所述保护层。Setting a sealing layer (step S2): covering the upper side of the resonator device with a sealing layer, the sealing layer constitutes an encapsulation layer of the resonator device, and the sealing layer covers the protective layer.
需要指出的是，也可以不设置保护层和/或第二钝化层，如此，封装方法可以仅仅包括步骤：在顶电极为具有空隙层的间隙电极的体声波谐振器的上侧设置密封层以形成体声波谐振器的封装结构层。It should be pointed out that the protective layer and/or the second passivation layer may not be provided. In this way, the packaging method may only include the steps of: providing a sealing layer on the upper side of the bulk acoustic wave resonator whose top electrode is a gap electrode with a gap layer To form the packaging structure layer of the bulk acoustic wave resonator.
基于以上，本发明提出了如下技术方案：Based on the above, the present invention proposes the following technical solutions:
1、一种体声波谐振器，包括：1. A bulk acoustic wave resonator, including:
顶电极；Top electrode
压电层；Piezoelectric layer
底电极；Bottom electrode
声学镜；以及Acoustic mirror; and
密封层，Sealing layer,
其中：among them:
所述顶电极包括第一顶电极和第二顶电极，所述第一顶电极贴附于所述压电层，在谐振器的厚度方向上间隙层形成在第一顶电极与第二顶电极之间；The top electrode includes a first top electrode and a second top electrode, the first top electrode is attached to the piezoelectric layer, and a gap layer is formed between the first top electrode and the second top electrode in the thickness direction of the resonator between;
所述密封层至少覆盖所述谐振器的有效区域的上侧以构成谐振器的封装层。The sealing layer covers at least the upper side of the effective area of the resonator to constitute an encapsulation layer of the resonator.
2、根据1所述的体声波谐振器，其中，2. The bulk acoustic wave resonator according to 1, wherein:
所述第二顶电极在谐振器的有效区域内设置有多个频率修整通道，所述频率修整通道贯穿所述第二顶电极，所述频率修整通道的下开口与间隙层相通。The second top electrode is provided with a plurality of frequency trimming channels in the effective area of the resonator, the frequency trimming channel penetrates the second top electrode, and the lower opening of the frequency trimming channel communicates with the gap layer.
3、根据2所述的体声波谐振器，其中，3. The bulk acoustic wave resonator according to 2, wherein:
所述谐振器还包括保护层，所述保护层覆盖所述频率修整通道的上开口，所述密封层覆盖所述保护层。The resonator further includes a protective layer covering the upper opening of the frequency trimming channel, and the sealing layer covering the protective layer.
4、根据3所述的体声波谐振器，其中，4. The bulk acoustic wave resonator according to 3, wherein:
所述保护层覆盖所述第二顶电极的上表面。The protective layer covers the upper surface of the second top electrode.
5、根据3所述的体声波谐振器，其中，5. The bulk acoustic wave resonator according to 3, wherein:
所述第二顶电极上表面设置有第二钝化层，且所述频率调整通道贯穿所述第二钝化层，所述保护层覆盖所述第二钝化层的至少一部分。The upper surface of the second top electrode is provided with a second passivation layer, the frequency adjustment channel penetrates the second passivation layer, and the protective layer covers at least a part of the second passivation layer.
6、根据3所述的体声波谐振器，其中：6. The bulk acoustic wave resonator according to 3, wherein:
所述保护层的材料为聚酰亚胺。The material of the protective layer is polyimide.
7、根据2-6中任一项所述的体声波谐振器，其中，7. The bulk acoustic wave resonator according to any one of 2-6, wherein:
所述多个频率修整通道呈预定图案布置。The plurality of frequency shaping channels are arranged in a predetermined pattern.
8、根据2-6中任一项所述的体声波谐振器，其中，8. The bulk acoustic wave resonator according to any one of 2-6, wherein:
所述第一顶电极的上表面形成有与所述频率调整通道相对应的若干凹坑。A number of pits corresponding to the frequency adjustment channel are formed on the upper surface of the first top electrode.
9、根据2-6中任一项所述的体声波谐振器，其中，9. The bulk acoustic wave resonator according to any one of 2-6, wherein:
所述第一顶电极上表面沉积有第一钝化层。A first passivation layer is deposited on the upper surface of the first top electrode.
10、根据9所述的体声波谐振器，其中，10. The bulk acoustic wave resonator according to 9, wherein:
所述第一钝化层形成有与所述频率调整通道相对应的若干凹坑。The first passivation layer is formed with a number of pits corresponding to the frequency adjustment channel.
11、根据1所述的体声波谐振器，其中：11. The bulk acoustic wave resonator according to 1, wherein:
所述密封层的材料为全氟代三氯硅烷或氮化硅。The material of the sealing layer is perfluorotrichlorosilane or silicon nitride.
12、一种滤波器，包括权利要求1-11中任一项所述的体声波谐振器。12. A filter comprising the bulk acoustic wave resonator according to any one of claims 1-11.
13、一种电子设备，包括根据1-11中任一项所述的体声波谐振器或权利要求12所述的滤波器。13. An electronic device comprising the bulk acoustic wave resonator according to any one of 1-11 or the filter according to claim 12.
14、一种体声波谐振器的封装方法，所述体声波谐振器包括谐振器器件，所述谐振器器件包括：顶电极；压电层；底电极；和声学镜，其中：所述顶电极包括第一顶电极和第二顶电极，所述第一顶电极贴附于所述压电层，在谐振器的厚度方向上间隙层形成在第一顶电极与第二顶电极之间，所述方法包括步骤：14. A method for packaging a bulk acoustic wave resonator, the bulk acoustic wave resonator comprising a resonator device, the resonator device comprising: a top electrode; a piezoelectric layer; a bottom electrode; and an acoustic mirror, wherein: the top electrode It includes a first top electrode and a second top electrode, the first top electrode is attached to the piezoelectric layer, and a gap layer is formed between the first top electrode and the second top electrode in the thickness direction of the resonator, so The method includes the steps:
在所述谐振器器件的上侧覆盖密封层，所述密封层构成所述谐振器器件的封装层。A sealing layer is covered on the upper side of the resonator device, and the sealing layer constitutes an encapsulation layer of the resonator device.
15、根据14所述的方法，其中：15. The method according to 14, wherein:
所述第二顶电极在谐振器的有效区域内设置有多个频率修整通道，所述频率修整通道贯穿所述第二顶电极，所述频率修整通道的下开口与间隙层相通；The second top electrode is provided with a plurality of frequency trimming channels in the effective area of the resonator, the frequency trimming channel penetrates the second top electrode, and the lower opening of the frequency trimming channel communicates with the gap layer;
所述方法还包括步骤：在第二顶电极的上表面设置保护层，所述保护层覆盖所述频率修整通道的上开口；且The method further includes the step of: disposing a protective layer on the upper surface of the second top electrode, the protective layer covering the upper opening of the frequency trimming channel; and
所述密封层覆盖所述保护层。The sealing layer covers the protective layer.
16、根据14所述的方法，其中：16. The method according to 14, wherein:
所述第二顶电极在谐振器的有效区域内设置有多个频率修整通道，所述第二顶电极上表面设置第二钝化层，所述频率修整通道贯穿所述第二顶电极和所述第二钝化层，所述频率修整通道的下开口与间隙层相通；The second top electrode is provided with a plurality of frequency trimming channels in the effective area of the resonator, a second passivation layer is provided on the upper surface of the second top electrode, and the frequency trimming channels penetrate the second top electrode and the The second passivation layer, the lower opening of the frequency trimming channel communicates with the gap layer;
所述方法还包括步骤：在所述第二钝化层的上表面的至少一部分设置保护层，所述保护层覆盖所述频率修整通道的上开口；且The method further includes the step of: disposing a protective layer on at least a part of the upper surface of the second passivation layer, the protective layer covering the upper opening of the frequency trimming channel; and
所述密封层覆盖所述保护层。The sealing layer covers the protective layer.
尽管已经示出和描述了本发明的实施例，对于本领域的普通技术人员而言，可以理解在不脱离本发明的原理和精神的情况下可以对这些实施例进行变化，本发明的范围由所附权利要求及其等同物限定。Although the embodiments of the present invention have been shown and described, for those of ordinary skill in the art, it will be understood that these embodiments can be changed without departing from the principle and spirit of the present invention, and the scope of the present invention is determined by The appended claims and their equivalents are defined.

Claims (16)

  1. 一种体声波谐振器，包括：A bulk acoustic wave resonator, including:
    顶电极；Top electrode
    压电层；Piezoelectric layer
    底电极；Bottom electrode
    声学镜；以及Acoustic mirror; and
    密封层，Sealing layer,
    其中：among them:
    所述顶电极包括第一顶电极和第二顶电极，所述第一顶电极贴附于所述压电层，在谐振器的厚度方向上间隙层形成在第一顶电极与第二顶电极之间；The top electrode includes a first top electrode and a second top electrode, the first top electrode is attached to the piezoelectric layer, and a gap layer is formed between the first top electrode and the second top electrode in the thickness direction of the resonator between;
    所述密封层至少覆盖所述谐振器的有效区域的上侧以构成谐振器的封装层。The sealing layer covers at least the upper side of the effective area of the resonator to constitute an encapsulation layer of the resonator.
  2. 根据权利要求1所述的体声波谐振器，其中，The bulk acoustic wave resonator according to claim 1, wherein:
    所述第二顶电极在谐振器的有效区域内设置有多个频率修整通道，所述频率修整通道贯穿所述第二顶电极，所述频率修整通道的下开口与间隙层相通。The second top electrode is provided with a plurality of frequency trimming channels in the effective area of the resonator, the frequency trimming channel penetrates the second top electrode, and the lower opening of the frequency trimming channel communicates with the gap layer.
  3. 根据权利要求2所述的体声波谐振器，其中，The bulk acoustic wave resonator according to claim 2, wherein:
    所述谐振器还包括保护层，所述保护层覆盖所述频率修整通道的上开口，所述密封层覆盖所述保护层。The resonator further includes a protective layer covering the upper opening of the frequency trimming channel, and the sealing layer covering the protective layer.
  4. 根据权利要求3所述的体声波谐振器，其中，The bulk acoustic wave resonator according to claim 3, wherein:
    所述保护层覆盖所述第二顶电极的上表面。The protective layer covers the upper surface of the second top electrode.
  5. 根据权利要求3所述的体声波谐振器，其中，The bulk acoustic wave resonator according to claim 3, wherein:
    所述第二顶电极上表面设置有第二钝化层，且所述频率调整通道贯穿所述第二钝化层，所述保护层覆盖所述第二钝化层的至少一部分。The upper surface of the second top electrode is provided with a second passivation layer, the frequency adjustment channel penetrates the second passivation layer, and the protective layer covers at least a part of the second passivation layer.
  6. 根据权利要求3所述的体声波谐振器，其中：The bulk acoustic wave resonator according to claim 3, wherein:
    所述保护层的材料为聚酰亚胺。The material of the protective layer is polyimide.
  7. 根据权利要求2-6中任一项所述的体声波谐振器，其中，The bulk acoustic wave resonator according to any one of claims 2-6, wherein:
    所述多个频率修整通道呈预定图案布置。The plurality of frequency shaping channels are arranged in a predetermined pattern.
  8. 根据权利要求2-6中任一项所述的体声波谐振器，其中，The bulk acoustic wave resonator according to any one of claims 2-6, wherein:
    所述第一顶电极的上表面形成有与所述频率调整通道相对应的若干凹坑。A number of pits corresponding to the frequency adjustment channel are formed on the upper surface of the first top electrode.
  9. 根据权利要求2-6中任一项所述的体声波谐振器，其中，The bulk acoustic wave resonator according to any one of claims 2-6, wherein:
    所述第一顶电极上表面沉积有第一钝化层。A first passivation layer is deposited on the upper surface of the first top electrode.
  10. 根据权利要求9所述的体声波谐振器，其中，The bulk acoustic wave resonator according to claim 9, wherein:
    所述第一钝化层形成有与所述频率调整通道相对应的若干凹坑。The first passivation layer is formed with a number of pits corresponding to the frequency adjustment channel.
  11. 根据权利要求1所述的体声波谐振器，其中：The bulk acoustic wave resonator according to claim 1, wherein:
    所述密封层的材料为全氟代三氯硅烷或氮化硅。The material of the sealing layer is perfluorotrichlorosilane or silicon nitride.
  12. 一种滤波器，包括权利要求1-11中任一项所述的体声波谐振器。A filter comprising the bulk acoustic wave resonator according to any one of claims 1-11.
  13. 一种电子设备，包括根据权利要求1-11中任一项所述的体声波谐振器或权利要求12所述的滤波器。An electronic device comprising the bulk acoustic wave resonator according to any one of claims 1-11 or the filter according to claim 12.
  14. 一种体声波谐振器的封装方法，所述体声波谐振器包括谐振器器件，所述谐振器器件包括：顶电极；压电层；底电极；和声学镜，其中：所述顶电极包括第一顶电极和第二顶电极，所述第一顶电极贴附于所述压电层，在谐振器的厚度方向上间隙层形成在第一顶电极与第二顶电极之间，所述方法包括步骤：A method for packaging a bulk acoustic wave resonator, the bulk acoustic wave resonator comprising a resonator device, the resonator device comprising: a top electrode; a piezoelectric layer; a bottom electrode; and an acoustic mirror, wherein: the top electrode includes a first A top electrode and a second top electrode, the first top electrode is attached to the piezoelectric layer, a gap layer is formed between the first top electrode and the second top electrode in the thickness direction of the resonator, the method Including steps:
    在所述谐振器器件的上侧覆盖密封层，所述密封层构成所述谐振器器件的封装层。A sealing layer is covered on the upper side of the resonator device, and the sealing layer constitutes an encapsulation layer of the resonator device.
  15. 根据权利要求14所述的方法，其中：The method of claim 14, wherein:
    所述第二顶电极在谐振器的有效区域内设置有多个频率修整通道，所述频率修整通道贯穿所述第二顶电极，所述频率修整通道的下开口与间隙层相通；The second top electrode is provided with a plurality of frequency trimming channels in the effective area of the resonator, the frequency trimming channel penetrates the second top electrode, and the lower opening of the frequency trimming channel communicates with the gap layer;
    所述方法还包括步骤：在第二顶电极的上表面设置保护层，所述保护层覆盖所述频率修整通道的上开口；且The method further includes the step of: disposing a protective layer on the upper surface of the second top electrode, the protective layer covering the upper opening of the frequency trimming channel; and
    所述密封层覆盖所述保护层。The sealing layer covers the protective layer.
  16. 根据权利要求14所述的方法，其中：The method of claim 14, wherein:
    所述第二顶电极在谐振器的有效区域内设置有多个频率修整通道，所述第二顶电极上表面设置第二钝化层，所述频率修整通道贯穿所述第二顶电极和所述第二钝化层，所述频率修整通道的下开口与间隙层相通；The second top electrode is provided with a plurality of frequency trimming channels in the effective area of the resonator, a second passivation layer is provided on the upper surface of the second top electrode, and the frequency trimming channels penetrate the second top electrode and the The second passivation layer, the lower opening of the frequency trimming channel communicates with the gap layer;
    所述方法还包括步骤：在所述第二钝化层的上表面的至少一部分设置 保护层，所述保护层覆盖所述频率修整通道的上开口；且The method further includes the step of: disposing a protective layer on at least a part of the upper surface of the second passivation layer, the protective layer covering the upper opening of the frequency trimming channel; and
    所述密封层覆盖所述保护层。The sealing layer covers the protective layer.
PCT/CN2020/088722 2019-12-31 2020-05-06 Bulk acoustic wave resonator and encapsulation method therefor, filter, and electronic device WO2021135012A1 (en)

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