WO2021130315A1 - Procédé de détermination d'une valeur d'un paramètre d'intérêt d'une cible formée par un procédé de formation de motifs - Google Patents

Procédé de détermination d'une valeur d'un paramètre d'intérêt d'une cible formée par un procédé de formation de motifs Download PDF

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Publication number
WO2021130315A1
WO2021130315A1 PCT/EP2020/087770 EP2020087770W WO2021130315A1 WO 2021130315 A1 WO2021130315 A1 WO 2021130315A1 EP 2020087770 W EP2020087770 W EP 2020087770W WO 2021130315 A1 WO2021130315 A1 WO 2021130315A1
Authority
WO
WIPO (PCT)
Prior art keywords
target
interest
parameter
radiation
substrate
Prior art date
Application number
PCT/EP2020/087770
Other languages
English (en)
Inventor
Satej Subhash KHEDEKAR
Alok Verma
Martijn Jongen
Elie BADR
Joannes Jitse VENSELAAR
Willem Seine Christian ROELOFS
Jaap Goossen KARSSENBERG
Gonzalo Roberto SANGUINETTI
Giacomo MICELI
Kuan-Ming Chen
Vito Daniele RUTIGLIANI
Shu-jin WANG
Original Assignee
Asml Netherlands B.V.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asml Netherlands B.V. filed Critical Asml Netherlands B.V.
Publication of WO2021130315A1 publication Critical patent/WO2021130315A1/fr

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70625—Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching

Abstract

Cible comprenant des réseaux de diffraction qui se chevauchent, les réseaux de diffraction supérieurs étant positionnés à proximité immédiate d'une extrémité du réseau de diffraction inférieur.
PCT/EP2020/087770 2019-12-24 2020-12-23 Procédé de détermination d'une valeur d'un paramètre d'intérêt d'une cible formée par un procédé de formation de motifs WO2021130315A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP19219621 2019-12-24
EP19219621.0 2019-12-24

Publications (1)

Publication Number Publication Date
WO2021130315A1 true WO2021130315A1 (fr) 2021-07-01

Family

ID=69061149

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2020/087770 WO2021130315A1 (fr) 2019-12-24 2020-12-23 Procédé de détermination d'une valeur d'un paramètre d'intérêt d'une cible formée par un procédé de formation de motifs

Country Status (1)

Country Link
WO (1) WO2021130315A1 (fr)

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3392106A (en) 1966-03-29 1968-07-09 Exxon Research Engineering Co Hydrocracking catalyst compositions and processes utilizing a crystalline aluminosilicate promoted with zinc and a group vi-beta metal compound
US20060066855A1 (en) 2004-08-16 2006-03-30 Asml Netherlands B.V. Method and apparatus for angular-resolved spectroscopic lithography characterization
WO2009078708A1 (fr) 2007-12-17 2009-06-25 Asml Netherlands B.V. Outil et procédé de métrologie de superposition à base de diffraction
WO2009106279A1 (fr) 2008-02-29 2009-09-03 Asml Netherlands B.V. Procédé et appareil de métrologie, appareil lithographique et procédé de fabrication de dispositif
US20100201963A1 (en) 2009-02-11 2010-08-12 Asml Netherlands B.V. Inspection Apparatus, Lithographic Apparatus, Lithographic Processing Cell and Inspection Method
US20110027704A1 (en) 2009-07-31 2011-02-03 Asml Netherlands B.V. Methods and Scatterometers, Lithographic Systems, and Lithographic Processing Cells
US20110043791A1 (en) 2009-08-24 2011-02-24 Asml Netherlands B.V. Metrology Method and Apparatus, Lithographic Apparatus, Device Manufacturing Method and Substrate
US20120242970A1 (en) 2010-11-12 2012-09-27 Asml Netherlands B.V. Metrology Method and Apparatus, and Device Manufacturing Method
WO2019201697A1 (fr) * 2018-04-18 2019-10-24 Asml Netherlands B.V. Procédé de détermination d'une valeur d'un paramètre d'intérêt d'une cible formée par un procédé de formation de motif

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3392106A (en) 1966-03-29 1968-07-09 Exxon Research Engineering Co Hydrocracking catalyst compositions and processes utilizing a crystalline aluminosilicate promoted with zinc and a group vi-beta metal compound
US20060066855A1 (en) 2004-08-16 2006-03-30 Asml Netherlands B.V. Method and apparatus for angular-resolved spectroscopic lithography characterization
WO2009078708A1 (fr) 2007-12-17 2009-06-25 Asml Netherlands B.V. Outil et procédé de métrologie de superposition à base de diffraction
WO2009106279A1 (fr) 2008-02-29 2009-09-03 Asml Netherlands B.V. Procédé et appareil de métrologie, appareil lithographique et procédé de fabrication de dispositif
US20100201963A1 (en) 2009-02-11 2010-08-12 Asml Netherlands B.V. Inspection Apparatus, Lithographic Apparatus, Lithographic Processing Cell and Inspection Method
US20110027704A1 (en) 2009-07-31 2011-02-03 Asml Netherlands B.V. Methods and Scatterometers, Lithographic Systems, and Lithographic Processing Cells
US20110043791A1 (en) 2009-08-24 2011-02-24 Asml Netherlands B.V. Metrology Method and Apparatus, Lithographic Apparatus, Device Manufacturing Method and Substrate
US20120242970A1 (en) 2010-11-12 2012-09-27 Asml Netherlands B.V. Metrology Method and Apparatus, and Device Manufacturing Method
WO2019201697A1 (fr) * 2018-04-18 2019-10-24 Asml Netherlands B.V. Procédé de détermination d'une valeur d'un paramètre d'intérêt d'une cible formée par un procédé de formation de motif

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
"Target design", RESEARCH DISCLOSURE, KENNETH MASON PUBLICATIONS, HAMPSHIRE, UK, GB, vol. 645, no. 26, 1 January 2018 (2018-01-01), pages 31, XP007146213, ISSN: 0374-4353, [retrieved on 20171205] *

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