WO2021120632A1 - 指纹感测装置 - Google Patents

指纹感测装置 Download PDF

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Publication number
WO2021120632A1
WO2021120632A1 PCT/CN2020/105846 CN2020105846W WO2021120632A1 WO 2021120632 A1 WO2021120632 A1 WO 2021120632A1 CN 2020105846 W CN2020105846 W CN 2020105846W WO 2021120632 A1 WO2021120632 A1 WO 2021120632A1
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sensing
coupled
signal
circuit
terminal
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PCT/CN2020/105846
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English (en)
French (fr)
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刘学欣
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神盾股份有限公司
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Priority to US17/769,328 priority Critical patent/US20230326232A1/en
Priority to KR1020227017742A priority patent/KR20220082923A/ko
Publication of WO2021120632A1 publication Critical patent/WO2021120632A1/zh

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    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06V—IMAGE OR VIDEO RECOGNITION OR UNDERSTANDING
    • G06V40/00—Recognition of biometric, human-related or animal-related patterns in image or video data
    • G06V40/10—Human or animal bodies, e.g. vehicle occupants or pedestrians; Body parts, e.g. hands
    • G06V40/12—Fingerprints or palmprints
    • G06V40/13—Sensors therefor
    • G06V40/1318—Sensors therefor using electro-optical elements or layers, e.g. electroluminescent sensing
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03M—CODING; DECODING; CODE CONVERSION IN GENERAL
    • H03M1/00—Analogue/digital conversion; Digital/analogue conversion
    • H03M1/12—Analogue/digital converters
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03M—CODING; DECODING; CODE CONVERSION IN GENERAL
    • H03M1/00—Analogue/digital conversion; Digital/analogue conversion
    • H03M1/12—Analogue/digital converters
    • H03M1/1205—Multiplexed conversion systems
    • H03M1/123—Simultaneous, i.e. using one converter per channel but with common control or reference circuits for multiple converters

Definitions

  • the invention relates to a sensing device, in particular to a fingerprint sensing device.
  • fingerprint recognition technology In recent years, biometric technology has developed rapidly. Since security codes and access cards are easily stolen or lost, more attention is paid to fingerprint recognition technology. Fingerprints are unique and constant, and each person has multiple fingers for identification. In addition, a fingerprint sensor can be used to easily obtain a fingerprint. Therefore, fingerprint recognition can improve security and convenience, and can better protect financial security and confidential data.
  • Thin Film Transistor (TFT) fingerprint sensors can be used to realize large-area full-screen fingerprint recognition.
  • TFT Thin Film Transistor
  • characteristics such as large threshold voltage changes and high on-resistance, coupled with factors such as die-to-die variation, temperature and aging, it is easy to cause excessive voltage changes in fingerprint sensing signals.
  • the problem Due to the limited input range of the analog-to-digital converter, excessive voltage changes will greatly reduce the available dynamic range, forcing manufacturers to choose high-resolution analog-to-digital converters, which greatly increases the production cost of the fingerprint sensor.
  • the present invention provides a fingerprint sensing device, which can adjust the change range of the sensing signal output to the analog-digital conversion circuit, reduces the demand for the dynamic range of the analog-digital conversion circuit, and effectively avoids increasing the production cost of the fingerprint sensing device.
  • the fingerprint sensing device of the present invention includes a sensing pixel array, a control circuit, and a plurality of analog-to-digital conversion circuits.
  • the sensing pixel array includes a plurality of sensing pixels, each sensing pixel is coupled to an operating voltage, each sensing pixel senses a light signal including fingerprint information, and generates a sensing signal according to the light signal and the operating voltage.
  • the control circuit is coupled to the sensing pixel array, and adjusts the voltage value of the operating voltage according to the sensing signal, so that the voltage value of the sensing signal generated by each sensing pixel falls within a default range.
  • the plurality of analog-digital conversion circuits are respectively coupled to the corresponding plurality of sensing pixels through the corresponding sensing signal lines, and convert the sensing signals into digital signals.
  • control circuit of the embodiment of the present invention can adjust the voltage value of the operating voltage output to each sensing pixel according to the sensing signal, so that the voltage value of the sensing signal generated by each sensing pixel falls within the default range.
  • the requirement for the dynamic range of the analog-digital conversion circuit can be reduced, and the production cost of the fingerprint sensing device can be effectively avoided.
  • Fig. 1 is a schematic diagram of a fingerprint sensing device according to an embodiment of the present invention.
  • FIG. 2 is a schematic diagram of a sensing pixel according to an embodiment of the invention.
  • FIG. 3 is a schematic diagram of a fingerprint sensing device according to another embodiment of the invention.
  • FIG. 4 is a schematic diagram of a fingerprint sensing device according to another embodiment of the invention.
  • FIG. 5 is a schematic diagram of a fingerprint sensing device according to another embodiment of the invention.
  • FIG. 1 is a schematic diagram of a fingerprint sensing device according to an embodiment of the present invention.
  • the fingerprint sensing device includes a sensing pixel array A1, a plurality of analog-to-digital conversion circuits 102-1 to 102-N, and a control circuit 104, where N is an integer greater than one.
  • the control circuit 104 is coupled to the sensing pixel array A1 and the analog-to-digital conversion circuits 102-1 to 102-N.
  • the analog-to-digital conversion circuits 102-1 to 102-N are respectively coupled to the sensing through corresponding sensing signal lines L1 to LN
  • the sensing pixels P1 from the 1st column to the Nth column in the pixel array A1.
  • the sensing pixel array A1 includes a plurality of sensing pixels P1, and each sensing pixel P1 is coupled to an operating voltage VOP provided by the control circuit 104.
  • Each sensing pixel P1 can sense a light signal including fingerprint information, and generate a sensing signal according to the light signal and the operating voltage VOP.
  • the sensing pixel array A1 is in the first to Nth columns.
  • the selected sensing pixels P1 can respectively output the sensing signals S1 to SN to the corresponding analog-to-digital conversion circuits 102-1 to 102-N.
  • the control circuit 104 can adjust the voltage value of the operating voltage VOP according to the sensing signals S1 to SN, so that the voltage values of the sensing signals S1 to SN generated by the sensing pixels P1 fall within the default range.
  • the analog-to-digital conversion circuits 102-1 to 102-N can respectively convert the sensing signals S1 to SN into digital signals for subsequent fingerprint identification processing by subsequent circuits (such as processor circuits).
  • the voltage value of the operating voltage VOP is adjusted by the control circuit 104 according to the sensing signals S1 to SN, and the voltage values of the sensing signals S1 to SN fall within the default range, which can reduce the difference between die-to-die
  • the global sensing signal voltage changes caused by factors such as temperature variation), temperature, or fingerprint sensing device aging, etc., thereby reducing the demand for the dynamic range of the analog-to-digital conversion circuit 102-1 ⁇ 102-N, and effectively avoiding the improvement of fingerprint sensing.
  • the production cost of the measuring device since the fingerprint sensing device can improve the usable dynamic range of the analog-to-digital conversion circuit by adjusting the voltage values of the sensing signals S1 to SN, the quality requirements for the thin film transistor manufacturing process can also be reduced.
  • the circuit structure of the sensing pixel P1 may be as shown in FIG. 2, for example, the sensing pixel P1 may include a photoelectric conversion unit D1 and a sensing unit composed of a transfer transistor M1, a reset transistor M2, an amplifying transistor M3, and a selection transistor M4.
  • a signal generating circuit where the photoelectric conversion unit D1 can be, for example, a photodiode, the cathode and anode of which are respectively coupled to the first end of the transmission transistor M1 and the ground, the second end of the transmission transistor M1 is coupled to the control end of the amplifying transistor M3, and the transmission transistor
  • the control terminal of M1 receives the transmission control signal TG.
  • the reset transistor M2 is coupled between the operating voltage Vdd and the control terminal of the amplifying transistor M3, and the control terminal of the reset transistor M2 receives the reset control signal RST.
  • the first end and the second end of the amplifying transistor M3 are respectively coupled to the operating voltage Vdd and the first end of the selection transistor M4, the second end of the selection transistor M4 is coupled to the current source I1 and the corresponding analog-to-digital conversion circuit, the selection transistor M4
  • the control terminal receives the selection control signal RSEL.
  • the reset transistor M2 can be controlled by the reset control signal RST to reset the voltage of the control terminal of the amplifying transistor M3 according to the operating voltage.
  • the selection transistor M4 can be controlled by the selection control signal RSEL to be turned on, and then the transmission transistor M1 is controlled by the transmission control signal TG to be turned on (this When the reset transistor M2 is in the off state), the photoelectric conversion unit D1 converts the electrical signal obtained by the optical signal including fingerprint information and transmits it to the control terminal of the amplifying transistor M3.
  • the voltage of this electrical signal can be reduced in response to the exposure of the photoelectric conversion unit D1, thereby changing the degree of conduction of the amplifying transistor M3, and the fingerprint information (in this embodiment, the sensing signal S1 is taken as an example) is output to the selection transistor M4 Analog-to-digital conversion circuit.
  • the control circuit 104 can adjust the size of the operating voltage Vdd according to the sensing signal S1 output by the selection transistor M4, that is, the operating voltage Vdd is adjusted as the operating voltage VOP of the embodiment in FIG. 1, so that the sensing signal S1 The voltage value of falls within the default range, thereby avoiding compression of the available dynamic range of the analog-to-digital conversion circuit.
  • control circuit 104 can also adjust the voltage value of the sensing signal S1 by controlling the voltage of the reset control signal RST, the transmission control signal TG, or the selection control signal RSEL. That is, the operating voltage VOP of the embodiment of FIG. 1 may include at least one of the voltage values of the operating voltage Vdd, the control reset control signal RST, the transmission control signal TG, and the selection control signal RSEL, and is not limited to the operating voltage Vdd. .
  • FIG. 3 is a schematic diagram of a fingerprint sensing device according to another embodiment of the present invention, please refer to FIG. 3.
  • the control circuit 104 of the fingerprint sensing device can be implemented by a power management circuit 302, a comparator circuit 304, and a plurality of switches SW1 to SWN.
  • the power management circuit 302 is coupled to each sensing pixel P1 (in FIG. 4 Is only schematically coupled to the sensing pixel P1) in the first row and the output terminal of the comparator circuit 304.
  • the switches SW1 to SWN are respectively coupled to one of the input terminals of the comparator circuit 304 and the corresponding sensing signal line L1 Between ⁇ LN, the other input terminal of the comparator circuit 304 is coupled to the reference voltage VREF.
  • the power management circuit 302 controls the conduction state of the switches SW1 ⁇ SWN to select the voltage of the sensing signal provided by one of the sensing signal lines L1 ⁇ LN for comparison with the reference voltage VREF.
  • the power management circuit 302 can adjust the operating voltage VOP according to the comparison result of the voltages of the sensing signals S1 ⁇ SN and the reference voltage VREF.
  • the power management circuit 302 can adjust the voltage value of the operating voltage VOP according to the comparison result output by the comparator circuit 304 (for example, gradually reduce the voltage value of the operating voltage Vdd) , Until the voltages of the sensing signals S1 to SN are lower than the reference voltage VREF, so that the voltage value of the sensing signal falls within the default range.
  • FIG. 4 is a schematic diagram of a fingerprint sensing device according to another embodiment of the present invention, please refer to FIG. 4.
  • the fingerprint sensing device of this embodiment is different from the fingerprint sensing device of the embodiment in FIG. 3 in that the fingerprint sensing device of this embodiment further includes filter capacitors C1 to CN, and the filter capacitors C1 to CN are respectively coupled to the corresponding Between the sensing signal lines L1 to LN and the corresponding analog-to-digital conversion circuits 102-1 to 102-N.
  • the filter capacitors C1 ⁇ CN can filter out the DC components in the sensing signals S1 ⁇ SN, so that the digital conversion circuits 102-1 ⁇ 102-N only deal with the voltage changes of the sensing signals S1 ⁇ SN caused by the exposure of the photoelectric conversion unit D1 As a result, the analog-to-digital conversion is performed, so that the available dynamic range of the analog-digital conversion circuits 102-1 to 102-N can be further optimized.
  • FIG. 5 is a schematic diagram of a fingerprint sensing device according to another embodiment of the present invention. Please refer to FIG. 5.
  • the difference between the fingerprint sensing device of this embodiment and the fingerprint sensing device of the embodiment in FIG. 4 is that the fingerprint sensing device of this embodiment further includes multiple multiplexers 502-1 to 502-125.
  • the multiplexers 502-1 to 502-125 can be configured on the thin film transistor panel TP with the sensing pixel array A1, but not limited thereto.
  • Each of the multiplexers 502-1 to 502-125 are respectively coupled to corresponding multiple sensing signal lines and corresponding filter capacitors, so as to select one of the corresponding multiple sensing signals from the multiple sensing signals on the line. Output to receiving corresponding filter capacitor.
  • the multiplexer 502-1 can select one of the sensing signals S1 ⁇ S4 to output to the filter capacitor C1, and the multiplexer 502-125 can select one of the sensing signals S497 ⁇ S500 to output to the filter.
  • Capacitor C125 in this embodiment, it is assumed that the number of sensing signal lines is 500, but it is not limited to this).
  • the power management circuit 302 can adjust the operating voltage VOP according to the comparison between the voltages of the sensing signals S1 to SN provided by the multiplexers 502-1 to 502-125 and the reference voltage VREF, and the filter capacitors C1 to C125 can Filter out the DC components in the sensing signals S1 to SN, so that the digital conversion circuits 102-1 to 102-125 only perform analog-to-digital conversion for the voltage change results of the sensing signals S1 to SN caused by the exposure of the photoelectric conversion unit D1, Since its detailed implementation details are similar to the foregoing embodiment, it will not be repeated here.
  • the multiplexers 502-1 to 502-125 are used to select and output the sensing signals S1 to SN, which can effectively reduce the circuit connection nodes and the number of electronic components of the fingerprint sensing device, thereby reducing the circuit area.
  • the control circuit of the embodiment of the present invention can adjust the voltage value of the operating voltage output to each sensing pixel according to the sensing signal, so that the voltage value of the sensing signal generated by each sensing pixel falls within the default range In this way, the demand for the dynamic range of the analog-to-digital conversion circuit can be reduced, and the production cost of the fingerprint sensing device can be effectively avoided.
  • the fingerprint sensing device may further include a filter capacitor coupled between the sensing signal line and the analog-to-digital conversion circuit. The filter capacitor can filter out the DC component in the sensing signal and further optimize the analog-to-digital conversion. The dynamic range available for the circuit.

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Abstract

本发明提供一种指纹感测装置。感测像素阵列包括多个感测像素，各感测像素感测包括指纹信息的光信号，并依据光信号与操作电压产生感测信号。控制电路依据感测信号调整操作电压的电压值，以使各感测像素产生的感测信号的电压值落于默认范围内。模拟数字转换电路将感测信号转换为数字信号。

Description

指纹感测装置 技术领域
本发明涉及一种感测装置，尤其涉及一种指纹感测装置。
背景技术
近年来，生物识别技术发展很快。由于安全码和访问卡很容易被盗或丢失，因此更多地关注指纹识别技术。指纹是唯一且不变的，并且每个人具有多个手指用于身份识别。另外，可以使用指纹传感器容易地取得指纹。因此，指纹识别可以提高安全性和便利性，并且可以更好地保护财务安全和保密数据。
薄膜晶体管(Thin Film Transistor，TFT)指纹传感器可用以实现大面积的全屏指纹识别。然而，由于薄膜晶体管具有阈值电压变化大以及高导通电阻等特性，加上晶粒间差异(die-to-die variation)、温度和老化等因素，容易导致指纹感测信号出现电压变化过大的问题。由于模拟数字转换器的输入范围有限，过大的电压变化将大幅降低可用动态范围，而迫使制造者需选用高解析的模拟数字转换器，而大幅提高指纹传感器的生产成本。
发明内容
本发明提供一种指纹感测装置，可调整输出至模拟数字转换电路的感测信号的变化范围，降低对模拟数字转换电路的动态范围的需求，有效避免提高指纹感测装置的生产成本。
本发明的指纹感测装置包括感测像素阵列、控制电路以及多个模拟数字转换电路。感测像素阵列包括多个感测像素，各感测像素耦接操作电压，各感测像素感测包括指纹信息的光信号，并依据光信号与操作电压产生感测信号。控制电路耦接感测像素阵列，依据感测信号调整操作电压的电压值，以使各感测像素产生的感测信号的电压值落于默认范围内。多个模拟数字转换电路分别通过对应的感测信号线耦接对应的多个感测像素，将感测信号转换为数字信号。
基于上述，本发明实施例的控制电路可依据感测信号调整输出至各感测像素的操作电压的电压值，以使各感测像素产生的感测信号的电压值落于默认范围内，如此可降低对模拟数字转换电路的动态范围的需求，有效避免提高指纹感测装置的生产成本。
为让本发明的上述特征和优点能更明显易懂，下文特举实施例，并配合附图作详细说明如下。
附图说明
图1是依照本发明的实施例的一种指纹感测装置的示意图。
图2是依照本发明的实施例的一种感测像素的示意图。
图3是依照本发明另一实施例的指纹感测装置的示意图。
图4是依照本发明另一实施例的指纹感测装置的示意图。
图5是依照本发明另一实施例的指纹感测装置的示意图。
具体实施方式
图1是依照本发明的实施例的一种指纹感测装置的示意图，请参照图1。指纹感测装置包括感测像素阵列A1、多个模拟数字转换电路102-1～102-N以及控制电路104，其中N为大于1的整数。控制电路104耦接感测像素阵列A1与模拟数字转换电路102-1～102-N，模拟数字转换电路102-1～102-N分别通过对应的感测信号线L1～LN耦接至感测像素阵列A1中第1列～第N列的感测像素P1。感测像素阵列A1包括多个感测像素P1，各感测像素P1耦接控制电路104所提供的操作电压VOP。
各感测像素P1可感测包括指纹信息的光信号，并依据光信号与操作电压VOP产生感测信号，例如在本实施例中，感测像素阵列A1中第1列～第N列中被选择的感测像素P1可分别输出感测信号S1～SN至对应的模拟数字转换电路102-1～102-N。控制电路104可依据感测信号S1～SN调整操作电压VOP的电压值，以使感测像素P1产生的感测信号S1～SN的电压值落于默认范围内。模拟数字转换电路102-1～102-N则可分别将感测信号S1～SN转换为数字信号，以供后级电路(例如处理器电路)进行后续的指纹识别处理。
如此通过控制电路104依据感测信号S1～SN调整操作电压VOP的电压 值，而将感测信号S1～SN的电压值落于默认范围内，可降低因晶粒间差异(die-to-die variation)、温度和或指纹感测装置老化等因素所造成的全局性的感测信号电压变化，进而降低对模拟数字转换电路102-1～102-N的动态范围的需求，有效避免提高指纹感测装置的生产成本。此外，由于指纹感测装置可通过调整感测信号S1～SN的电压值来改善模拟数字转换电路的可用动态范围，因此对于薄膜晶体管制程的质量要求也可被降低。
进一步来说，感测像素P1的电路结构可例如图2所示，感测像素P1可包括光电转换单元D1以及由传输晶体管M1、重置晶体管M2、放大晶体管M3与选择晶体管M4构成的感测信号产生电路，其中光电转换单元D1可例如为光电二极管，其阴极与阳极分别耦接传输晶体管M1的第一端与接地，传输晶体管M1的第二端耦接放大晶体管M3的控制端，传输晶体管M1的控制端接收传输控制信号TG。重置晶体管M2耦接于操作电压Vdd与放大晶体管M3的控制端之间，重置晶体管M2的控制端接收重置控制信号RST。放大晶体管M3的第一端与第二端分别耦接操作电压Vdd与选择晶体管M4的第一端，选择晶体管M4的第二端耦接电流源I1与对应的模拟数字转换电路，选择晶体管M4的控制端则接收选择控制信号RSEL。
重置晶体管M2可受控于重置控制信号RST而依据操作电压重置放大晶体管M3的控制端的电压。当感测像素P1的所在行被选择以输出感测信号时，选择晶体管M4可受控于选择控制信号RSEL而被导通，而后传输晶体管M1受控于传输控制信号TG而被导通(此时重置晶体管M2处于断开状态)，光电转换单元D1转换包括指纹信息的光信号所得到电信号并将其传送至放大晶体管M3的控制端。此电信号的电压可反应光电转换单元D1的曝光情形而下降，进而改变放大晶体管M3导通程度，而将指纹信息(在本实施例中以感测信号S1为例)通过选择晶体管M4输出给模拟数字转换电路。在本实施例中，控制电路104可依据选择晶体管M4输出的感测信号S1调整操作电压Vdd的大小，亦即将操作电压Vdd作为图1实施例的操作电压VOP进行调整，以使感测信号S1的电压值落于默认范围内，进而避免压缩模拟数字转换电路可用的动态范围。值得注意的是，在部份实施例中，控制电路104也可通过控制重置控制信号RST、传输控制信号TG或选择控制信号RSEL的电压来调整感测信号S1的电压值。也就是说，图1实施例的操作电压VOP可包括 操作电压Vdd、控制重置控制信号RST、传输控制信号TG以及选择控制信号RSEL的电压值至少其中之一，而不以操作电压Vdd为限。
图3是依照本发明另一实施例的指纹感测装置的示意图，请参照图3。在本实施例中，指纹感测装置的控制电路104可以电源管理电路302、比较器电路304以及多个开关SW1～SWN来实施，其中电源管理电路302耦接各个感测像素P1(在图4中仅示意地耦接至第一行的感测像素P1)以及比较器电路304的输出端，开关SW1～SWN分别耦接于比较器电路304的其中一输入端与对应的感测信号线L1～LN之间，比较器电路304的另一输入端耦接参考电压VREF。电源管理电路302控制开关SW1～SWN的导通状态，以选择感测信号线L1～LN其中之一所提供的感测信号的电压与参考电压VREF进行比较。电源管理电路302可依据感测信号S1～SN的电压与参考电压VREF的比较结果来调整操作电压VOP。例如当感测信号S1～SN的电压皆高于参考电压VREF时，电源管理电路302可依据比较器电路304输出的比较结果调整操作电压VOP的电压值(例如逐渐降低操作电压Vdd的电压值)，直到感测信号S1～SN的电压皆低于参考电压VREF，而使感测信号的电压值落于默认范围内。
图4是依照本发明另一实施例的指纹感测装置的示意图，请参照图4。本实施例的指纹感测装置与图3实施例的指纹感测装置的不同之处在于，本实施例的指纹感测装置还包括滤波电容C1～CN，滤波电容C1～CN分别耦接于对应的感测信号线L1～LN与对应的模拟数字转换电路102-1～102-N之间。滤波电容C1～CN可滤除感测信号S1～SN中的直流成分，而使数字转换电路102-1～102-N仅针对光电转换单元D1曝光所造成的感测信号S1～SN的电压变化结果进行模拟数字转换，如此可进一步优化模拟数字转换电路102-1～102-N可用的动态范围。
图5是依照本发明另一实施例的指纹感测装置的示意图，请参照图5。本实施例的指纹感测装置与图4实施例的指纹感测装置的不同之处在于，本实施例的指纹感测装置还包括多个多路复用器502-1～502-125，多路复用器502-1～502-125可例如与感测像素阵列A1配置于薄膜晶体管面板TP上，然不以此为限。各个多路复用器502-1～502-125分别耦接对应的多条感测信号线以及对应的滤波电容，以分别自对应的多条感测信号在线多个感测信号中选 择其一输出至接收对应的滤波电容。例如多路复用器502-1可自感测信号S1～S4中选择其一输出至滤波电容C1，多路复用器502-125可自感测信号S497～S500中选择其一输出至滤波电容C125(在本实施例中假设感测信号线的数量为500，然不以此为限)。类似地，电源管理电路302可依据多路复用器502-1～502-125提供的感测信号S1～SN的电压与参考电压VREF的比较结果来调整操作电压VOP，滤波电容C1～C125可滤除感测信号S1～SN中的直流成分，而使数字转换电路102-1～102-125仅针对光电转换单元D1曝光所造成的感测信号S1～SN的电压变化结果进行模拟数字转换，由于其详细的实施细节与上述实施例类似，因此在此不再赘述。如此通过多路复用器502-1～502-125来选择输出感测信号S1～SN，可有效地减少指纹感测装置的电路连接节点以及电子元件数量，进而缩小电路面积。
综上所述，本发明实施例的控制电路可依据感测信号调整输出至各感测像素的操作电压的电压值，以使各感测像素产生的感测信号的电压值落于默认范围内，如此可降低对模拟数字转换电路的动态范围的需求，有效避免提高指纹感测装置的生产成本。在部份实施例中，指纹感测装置还可包括耦接于感测信号线与模拟数字转换电路间的滤波电容，滤波电容可滤除感测信号中的直流成分，而进一步优化模拟数字转换电路可用的动态范围。
虽然本发明已以实施例揭示如上，然其并非用以限定本发明，任何所属技术领域中技术人员，在不脱离本发明的精神和范围内，当可作些许的更改与润饰，故本发明的保护范围当视权利要求所界定的为准。

Claims (8)

  1. 一种指纹感测装置，其特征在于，包括：
    感测像素阵列，包括多个感测像素，各所述感测像素耦接操作电压，各所述感测像素感测包括指纹信息的光信号，并依据所述光信号与所述操作电压产生感测信号；
    控制电路，耦接所述感测像素阵列，依据所述感测信号调整所述操作电压的电压值，以使各所述感测像素产生的感测信号的电压值落于默认范围内；以及
    多个模拟数字转换电路，分别通过对应的感测信号线耦接对应的多个感测像素，将所述感测信号转换为数字信号。
  2. 根据权利要求1所述的指纹感测装置，其特征在于，所述控制电路包括:
    比较器电路，其第一输入端耦接多条所述感测信号线，所述比较器电路的第二输入端耦接参考电压，所述比较器电路比较所述感测信号与所述参考电压的电压值而产生比较信号；以及
    电源管理电路，耦接所述比较器电路的输出端与所述感测像素阵列，依据所述比较信号调整所述操作电压的电压值。
  3. 根据权利要求2所述的指纹感测装置，其特征在于，所述控制电路还包括：
    多个开关，耦接于对应的感测信号线与所述比较器电路的第一输入端之间，各所述开关受控于所述电源管理电路而提供对应的感测信号在线的感测信号至所述比较器电路的第一输入端。
  4. 根据权利要求2所述的指纹感测装置，其特征在于，还包括：
    多个滤波电容，耦接于对应的感测信号线与对应的模拟数字转换电路之间，滤除所述感测信号中的直流成分。
  5. 根据权利要求2所述的指纹感测装置，其特征在于，还包括：
    多个多路复用器，各所述多路复用器的输入端耦接对应的多条感测信号线，各所述模拟数字转换电路耦接对应的多路复用器的输出端，各所述多路复用器自与输入端耦接的多条感测信号在线的多个感测信号选择其一输出给对应的模拟数字转换电路。
  6. 根据权利要求5所述的指纹感测装置，其特征在于，还包括：
    多个开关，耦接于对应的多路复用器的输出端与所述比较器电路的第一输入端之间，各所述开关受控于所述控制电路而提供对应的多路复用器提供的感测信号至所述比较器电路的第一输入端。
  7. 根据权利要求1所述的指纹感测装置，其特征在于，各所述感测像素包括：
    光电转换单元，感测包括指纹信息的光信号而产生电信号；以及
    感测信号产生电路，耦接所述光电转换单元与所述操作电压，依据所述电信号将所述操作电压转换为相应的所述感测信号。
  8. 根据权利要求7所述的指纹感测装置，其特征在于，各所述感测信号产生电路包括：
    传输晶体管，其第一端耦接所述光电转换单元，受控于传输控制信号而输出所述电信号；
    重置晶体管，其第一端耦接所述操作电压，所述重置晶体管的第二端耦接所述传输晶体管的第二端，所述重置晶体管受控于重置控制信号而重置所述传输晶体管的第二端的电压；
    放大晶体管，其控制端耦接所述传输晶体管的第二端，所述放大晶体管的第一端耦接所述操作电压，反应所述电信号的电压值而产生所述感测信号；以及
    选择晶体管，耦接于所述放大晶体管的第二端与所述感测信号产生电路的输出端之间，受控于选择控制信号而输出所述感测信号。
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