WO2021120244A1 - Module frontal radiofréquence utilisé pour une double connexion 5g non autonome et prenant en charge lte/nr - Google Patents

Module frontal radiofréquence utilisé pour une double connexion 5g non autonome et prenant en charge lte/nr Download PDF

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Publication number
WO2021120244A1
WO2021120244A1 PCT/CN2019/127953 CN2019127953W WO2021120244A1 WO 2021120244 A1 WO2021120244 A1 WO 2021120244A1 CN 2019127953 W CN2019127953 W CN 2019127953W WO 2021120244 A1 WO2021120244 A1 WO 2021120244A1
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WIPO (PCT)
Prior art keywords
band
end module
radio frequency
full
pole double
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PCT/CN2019/127953
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English (en)
Chinese (zh)
Inventor
胡自洁
曹原
倪楠
倪建兴
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锐石创芯(重庆)科技有限公司
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Publication of WO2021120244A1 publication Critical patent/WO2021120244A1/fr

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    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/38—Transceivers, i.e. devices in which transmitter and receiver form a structural unit and in which at least one part is used for functions of transmitting and receiving
    • H04B1/40—Circuits
    • H04B1/401—Circuits for selecting or indicating operating mode
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/005—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission adapting radio receivers, transmitters andtransceivers for operation on two or more bands, i.e. frequency ranges
    • H04B1/0067—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission adapting radio receivers, transmitters andtransceivers for operation on two or more bands, i.e. frequency ranges with one or more circuit blocks in common for different bands

Definitions

  • the invention belongs to the field of switches, in particular to a radio frequency front-end module supporting LTE/NR dual connections for 5G non-independent networking.
  • Wireless transmission refers to a way of data transmission using wireless technology, and wireless transmission and wired transmission are corresponding.
  • wireless transmission technology is used in modern transportation, transportation, water conservancy, shipping, railways, public security, fire protection, border checkpoints, scenic spots, communities, and other fields.
  • Wireless transmission is divided into: analog microwave transmission and digital microwave transmission; analog microwave transmission is to directly modulate the video signal on the microwave channel and transmit it through the antenna.
  • the monitoring center receives the microwave signal through the antenna, and then demodulates it through the microwave receiver.
  • the original video signal In digital microwave transmission, the video is encoded and compressed first, then modulated through the digital microwave channel, and then transmitted through the antenna.
  • the receiver receives the signal, microwave despreads, video decompression locks, and finally restores the analog video signal.
  • mobile communication uses mobile networks to realize data transmission.
  • mobile communication has gone through the 2G, 3G and 4G eras.
  • 5G mobile communication technology
  • the 5G network is a digital cellular network.
  • the service area covered by the provider is divided into many small geographic areas called cellular.
  • the analog signals representing sound and images are digitized in the mobile phone, converted by an analog-to-digital converter, and transmitted as a bit stream.
  • All 5G wireless devices in the cell communicate with the local antenna array and low-power automatic transceivers (transmitters and receivers) in the cell through radio waves.
  • the transceiver allocates frequency channels from a common frequency pool, which can be reused in geographically separated cells.
  • the local antenna is connected to the telephone network and the Internet through a high-bandwidth optical fiber or wireless backhaul connection. As with existing mobile phones, when users traverse from one cell to another, their mobile device will automatically "switch" to the antenna in the new cell.
  • the main advantage of the 5G network is that the data transmission rate is much higher than the previous cellular network, up to 10Gbit/s, faster than the current wired Internet, and 100 times faster than the previous 4GLTE cellular network.
  • Another advantage is lower network latency (faster response time), less than 1 millisecond, compared to 30-70 milliseconds for 4G.
  • Non-independent networking refers to the deployment of 5G networks using the existing 4G infrastructure.
  • 5G carriers based on the NSA architecture only carry user data, and their control signaling is still transmitted through the 4G network.
  • the independent networking refers to a new 5G network, including new base stations, backhaul links, and core networks.
  • SA's networking mode can make the 5G network ready as soon as possible, and it is also the mode commonly used in 5G networking.
  • SA is the 5G service access to the 5G core network under the direct control of 5G base stations, which is the ultimate goal of 5G network evolution.
  • 5G NSA The main advantages of 5G NSA include:
  • the NSA standard was finalized earlier than the SA standard, so the corresponding product and testing work has basically been completed, and the product is theoretically more mature.
  • 5G base stations Under the NSA networking, 5G base stations will utilize the existing 4G core network, eliminating the need for the construction of 5G core networks.
  • 5G NSA has great advantages in the rapid deployment of 5G. It can be upgraded on the basis of the original 4G base station. In this way, 5G signal coverage can be achieved on a large scale and quickly in the early stage of 5G construction, and users do not change cards or numbers. Can upgrade to 5G network.
  • EN-DC LTE/NR dual connectivity
  • the purpose of the present invention here is to provide a radio frequency front-end module supporting LTE/NR dual connection for 5G non-independent networking that avoids external 5G N41 power amplifiers and can achieve compatibility with 4G frequency bands and 5G frequency bands.
  • the radio frequency front-end module supporting ENDC for 5G non-independent networking includes a baseband chip and a switch group for generating 4G full-band signals and 5G frequency band signals, and the output of the baseband chip The terminals are respectively loaded on the lower-level circuit through the switch group.
  • the switch group includes a first single-pole double-throw switch and a second single-pole double-throw switch.
  • the single-pole double-throw switch is used to form the switch group, which simplifies the circuit structure and supports all 4G+5G N41 band EN-DC combined configurations in the 5G NSA networking mode.
  • the baseband chip outputs 5G signals, 4G-HB signals, 4G-MB signals, and 4G-LB signals, and the output 5G signals and 4G-HB signals are respectively loaded on the two non-functions of the first single-pole double-throw switch.
  • the output 4G-HB signal is also loaded on a fixed end of the second single-pole double-throw switch, and the other fixed end of the second single-pole double-throw switch is loaded with a 4G-MB signal;
  • the moving ends of the first single-pole double-throw switch and the second single-pole double-throw switch are respectively used as output terminals.
  • it also includes a full-band radio frequency front-end module, and the 4G-LB signal is loaded on the input end of the full-band radio frequency front-end module.
  • the full-band radio frequency front-end module is a 4G full-band radio frequency module compatible with 5G refarming frequency bands (including 5G N41).
  • the beneficial effect of the present invention is that the front-end module provided by the present invention combines the baseband chip and switch group that generates 4G full-band signals and 5G frequency band signals to realize the EN-DC of 4G frequency band and 5G refarming frequency band, and avoid the problem of external 5G power amplifier. Necessity; and the EN-DC (LTE/NR dual connection) output of different frequency bands can be realized through the on/off of the switch group.
  • Figure 1 is a structural diagram of a radio frequency front-end module provided by the present invention
  • FIG. 2 is a diagram of the 4G-LTE working principle of the radio frequency front-end module provided by the present invention
  • Fig. 3 is a working principle diagram of the 4G MB+5G N41 ENDC of the radio frequency front-end module provided by the present invention
  • Fig. 4 is a working principle diagram of the 4G LB+5G N41 ENDC of the radio frequency front-end module provided by the present invention
  • Fig. 5 is a working principle diagram of the 4G B40+5G N41 ENDC of the radio frequency front-end module provided by the present invention
  • Figure 6 is one of the schematic diagrams of the circuit structure of the full-band radio frequency front-end module provided by the present invention.
  • FIG. 7 is the second schematic diagram of the circuit structure of the full-band radio frequency front-end module provided by the present invention.
  • Fig. 8 shows a schematic diagram of the circuit structure of the amplifying group provided by the present invention.
  • FIG. 9 shows a schematic diagram of the circuit structure of the bias circuit provided by the present invention.
  • Fig. 10 shows a circuit connection diagram between the bias circuit and the amplifier group provided by the present invention
  • Figures 1-5 show the principle structure of a radio frequency front-end module supporting LTE/NR dual connectivity for 5G non-independent networking provided by the present invention.
  • the specific structure of the front-end module is embodied by the following examples.
  • the front-end module provided in this example includes a baseband chip 1 and a switch group 2 for generating 4G full-band signals and 5G frequency band signals.
  • the output terminals of the baseband chip 1 are loaded on the lower-level circuit through the switch group 2 respectively.
  • the front-end module provided in this example includes all the technical features of the front-end module provided in Example 1. It also includes the full-band RF front-end module 3, and also includes the full-band RF front-end module 3, and the 4G full-band output from the baseband chip 1 The signal and the 5G band signal are loaded on the input end of the full-band radio frequency front-end module 3 via the switch group 2.
  • the full-band RF front-end module 3 is a 4G full-band RF module compatible with 5G refarming frequency bands (including 5G N41).
  • the 4G full-band radio frequency module compatible with the 5G refarming frequency band (including 5G N41) in this disclosure can adopt any 4G full-band radio frequency module compatible with the 5G refarming frequency band (including 5G N41).
  • a simple structure is provided here. 4G full-band radio frequency module compatible with 5G refarming frequency band (including 5G N41).
  • Figure 6-10 shows an exemplary structure of the 4G full-band radio frequency module compatible with 5G refarming frequency bands (including 5G N41).
  • the first amplification group 1 supports the N41 5G frequency band and 4G HB frequency band.
  • the second amplification group 2 supports the 4G MB frequency band
  • the third amplification group 3 supports the 4G LB frequency band as an example to introduce the power amplifier architecture of the embodiment of the present disclosure.
  • the first amplification group 1 supports the N41 5G frequency band and For the 4G HB frequency band
  • the second amplifying group 2 supports the 4G MB frequency band
  • the third amplifying group 3 supports the 4G LB frequency band, which is only exemplary, and not as a limitation of the power amplifier architecture of the embodiment of the present disclosure.
  • the 4G full-band radio frequency module compatible with 5G refarming frequency band includes the following structures:
  • the first structure includes a first amplification group 31, a second amplification group 32, and a third amplification group 33.
  • the first amplification group 31 is used to support the N41 5G frequency band and 4G HB frequency band
  • the second amplification group 32 is used to support 4G.
  • the third amplification group 33 is used to support 4G LB frequency band.
  • the first amplification group 31, the second amplification group 32 and the third amplification group 33 are independent HB/N41 PA modules, MB PA modules and LB PA modules, respectively.
  • the input pins of the HB/N41 PA module are HB/N41-IN ,
  • the output pin is HB/N41-OUT;
  • the input pin of the MB PA module is MB-IN, and the output pin is MB-OUT;
  • the input pin of the LB PA module is LB-IN, and the output pin is LB-OUT , As shown in Figure 6- Figure 7.
  • the N41 5G frequency band ranges from 2496MHz to 2690MHz
  • the 4G HB frequency band ranges from 2305MHz to 2690MHz
  • the 4G MB frequency band ranges from 1710MHz to 1980MHz
  • the 4G LB frequency band ranges from 660MHz to 915MHz.
  • the working modes of the 4G full-band radio frequency module compatible with the 5G refarming frequency band (including 5G N41) provided by the first structure include: N41/HB and MB, N41/HB and LB.
  • the first amplification group 1 supports both the 5G N41 frequency band and the 4G HB frequency band, and no additional 5G N41 PA module is required.
  • the working principle of the 4G full-band radio frequency module compatible with 5G refarming frequency band (including 5G N41) provided by the first structure is: the 5G N41 frequency band, 4G HB frequency band, 4G MB frequency band, and 4G MB frequency band generated by baseband chip 1 are respectively divided by HB/ HB/N41 PA module, MB PA module and LB PA module corresponding to N41-IN pin, MB-IN pin and LB-IN pin input, input via HB/N41 PA module, MB PA module and LB PA module After processing, the frequency bands are output from the HB/N41-OUT pin, MB-OUT pin, and LB-OUT pin.
  • the second structure includes all the technical features of the 4G full-band radio frequency module compatible with the 5G refarming frequency band (including 5G N41) provided by the first structure, and also includes the first power pin N41_HB_VCC1, the second power pin N41_HB_VCC2, and the second power pin.
  • Three power supply pins MB_LB_VCC1 and fourth power supply pin MB_LB_VCC2, the first amplifying group 31 uses the first power pin N41_HB_VCC1 and the second power pin N41_HB_VCC2; the second amplifying group 32 and the third amplifying group 33 share the third power pin MB_LB_VCC1 and the fourth power pin MB_LB_VCC2 are shown in Figure 6- Figure 7.
  • the first power pin N41_HB_VCC1, the second power pin N41_HB_VCC2, the third power pin MB_LB_VCC1, and the fourth power pin MB_LB_VCC2 can be powered by a single power supply, where the first power pin N41_HB_VCC1 and the second power pin N41_HB_VCC2 are powered by DC -DC power supply 2 is powered, the third power supply pin MB_LB_VCC1 and the fourth power supply pin MB_LB_VCC2 are respectively powered by DC-DC power supply 1; dual power supply improves the isolation between each amplification group and reduces interference.
  • the third structure includes all the technical features of the 4G full-band radio frequency module compatible with the 5G refarming frequency band (including 5G N41) provided by the first structure and the second structure, and also includes the first amplification group 31 and the second amplification
  • the group 32 and the third amplifying group 33 provide the controller 34 of the bias current.
  • the controller 34 includes the following two structures:
  • the structure of the first controller 34 includes a first bias circuit 341 and a second bias circuit 342.
  • the first bias circuit 341 is electrically connected to the first amplifying group 31 and is the first amplifying group 31.
  • a bias current is provided;
  • the second bias circuit 342 is electrically connected to the second amplification group 32 and the third amplification group 33, respectively, and provides a bias current for the second amplification group 32 and the third amplification group 33, respectively.
  • the first bias circuit 341 controls the operation of the first amplification group 31, and the second bias circuit 342 controls the second amplification group 32 and the third amplification group 33 to work at the same time, or only controls the second amplification group 32 or the third amplification group. 33 work.
  • the first bias circuit 341 and the second bias circuit 342 may have only one bias or multiple biases.
  • three biases are used, that is, the first bias circuit 341 and the second bias circuit 342 Including three-way offset respectively, as shown in Figure 9.
  • the circuit connection relationship with the first amplification group 31, the second amplification group 32, and the third amplification group 33 is as shown in FIG. 10
  • the three biases of the first bias circuit 341 are directly loaded on the first amplifying group 31, and the three biases of the second bias circuit 342 are respectively loaded on the second amplifying group 32 and the third amplifying group 33 via the switch 35. on.
  • the design of the multi-path bias and switch 35 realizes the controllability of frequency band selection.
  • the switch 35 can be a single-pole double-throw switch or a single-pole multi-throw switch.
  • the second controller 34 structure includes a first bias circuit 341 and a second bias circuit that provide bias signals for the first amplification group 31, the second amplification group 32, and the third amplification group 33, respectively.
  • the first bias circuit 341, the second bias circuit 342, and the third bias circuit 343 can control the operation of the first amplification group 31, the second amplification group 32 and the third amplification group 33 at the same time, or only control the first amplification group 31.
  • One or both of the second amplification group 32 and the third amplification group 33 work.
  • the first bias circuit 341, the second bias circuit 342, and the third bias circuit 343 may have only one bias or multiple biases.
  • three biases are used, that is, the first bias circuit 341, the second bias circuit 342, and the third bias circuit 343 respectively include three biases, as shown in FIG. 9; or the first bias circuit 341, the second bias circuit 342, and the third bias circuit 343 One or two of them include three-way offsets, and the rest are one-way or two-way offsets.
  • the outputs of the first bias circuit 341, the second bias circuit 342, and the third bias circuit 343 are directly loaded on the first amplification group 31, the second amplification group 32, and the third amplification group 33.
  • any one of the first bias circuit 341, the second bias circuit 342, and the third bias circuit 343 in the first and second controllers can be used.
  • a bias circuit composed of one or more COM current sources is used. Set the circuit, as shown in Figure 9, Figure 10.
  • FIG. 8 shows the specific circuit structure of the first amplification group 31, the second amplification group 32 and/or the third amplification group 33 recorded in the present disclosure, including an input matching circuit 36, a first stage amplifier 37, and an intermediate matching circuit 38 , The second stage amplifier 39 and the output matching circuit 310.
  • the switch group 2 recorded in the front-end module provided in example one and example two includes multiple channels, and the input end of each channel is loaded with signals of different frequency bands output by the baseband chip 1; an external signal controls a channel in the switch group 2 or
  • the output of different frequency bands can be realized by turning on and off certain channels.
  • the multiple paths can be composed of independent switches, that is, the switch group 3 includes multiple switches, and each switch serves as a path.
  • the first single-pole double-throw switch 21 and the second single-pole double-throw switch 22 are used to form the switch group 2 here.
  • the output 5G signal and 4G-HB signal are respectively loaded on the two fixed ends of the first SPDT switch 21; the output 4G-HB signal is also loaded on the second SPDT switch A 4G-MB signal is loaded on one fixed end of the second single-pole double-throw switch 22 and the other fixed end of the second single-pole double-throw switch 22; the moving ends of the first single-pole double-throw switch 21 and the second single-pole double-throw switch 22 are respectively used as output terminals .
  • a 1-1 path is formed between the first single-pole double-throw switch 21 and the 5G signal of the baseband chip 1, and a 1-2 path is formed between the 4G-HB signal; the second single-pole double-throw switch 2 and the 4G-HB of the baseband chip 1
  • a 2-1 path is formed between the signals, and a 2-2 path is formed between the 4G-MB signals.
  • the 4G-LB signal output by the baseband chip 1 is directly loaded on the input end of the full-band radio frequency front-end module 3.
  • the working modes include 4G-LTE, 4G MB+5G N41 ENDC, 4G LB +5G N41 ENDC and 4G B40+5G N41 ENDC.
  • the moving end of the first single-pole double-throw switch 21 is set to the 1-2 path, and the second single-pole double-throw switch 22 is set to the 2-2 path, 4G LB/MB/HB Any work in PA.
  • the first single-pole double-throw switch 21 goes to the 1-1 path, and the second single-pole double-throw switch 22 goes to the 2-1 path.
  • MBPA expands the bandwidth, use It supports 4G B40 power amplifier; HB PA works at the same time as N41 power amplifier.
  • the front-end module provided by the present invention can be used to replace two of the traditional EN-DC solutions (4G full-band power amplifier and external 5G N41 power amplifier).
  • HB High Band
  • MB Mid Band
  • LB Low Band
  • PA power amplifier
  • N41 is the 5G frequency band.

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  • Engineering & Computer Science (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Signal Processing (AREA)
  • Transceivers (AREA)
  • Amplifiers (AREA)

Abstract

Est divulgué un module frontal radiofréquence utilisé pour une double connexion 5G non autonome et prenant en charge LTE/NR. Le module comprend : une puce de bande de base (1) utilisée pour générer un signal de bande complète 4G et un signal de bande 5G ; et un groupe de commutateurs (2). Les extrémités de sortie de la puce de bande de base (1) sont respectivement chargées sur un circuit de niveau inférieur au moyen du groupe de commutateurs (2). Le module frontal d'après la présente invention est combiné à la puce de bande de base, qui génère le signal de bande complète 4G et le signal de bande 5G, et au groupe de commutateurs, ce qui permet l'EN-DC d'une bande 4G et d'une bande de réaffectation 5G. Il n'est donc plus nécessaire de fournir de l'extérieur un amplificateur de puissance 5G. De plus, la sortie de bandes différentes est possible au moyen de l'activation/désactivation du groupe de commutateurs.
PCT/CN2019/127953 2019-12-17 2019-12-24 Module frontal radiofréquence utilisé pour une double connexion 5g non autonome et prenant en charge lte/nr WO2021120244A1 (fr)

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CN201911302297.6 2019-12-17
CN201911302297.6A CN111130592A (zh) 2019-12-17 2019-12-17 用于5g非独立组网的支持lte/nr双连接的射频前端模块

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CN114531163B (zh) * 2020-11-23 2024-06-18 Oppo广东移动通信有限公司 射频电路及终端设备
US11962341B2 (en) 2020-12-24 2024-04-16 Samsung Electronics Co., Ltd. Electronic device and method for wireless communication
CN113517904B (zh) * 2021-04-22 2023-03-24 惠州Tcl云创科技有限公司 一种射频前端电路及电子设备
CN114039614B (zh) * 2021-12-07 2022-10-18 Oppo广东移动通信有限公司 射频前端器件、射频收发系统和通信设备

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