WO2021120243A1

WO2021120243A1 - Architecture of 5g power amplifier supporting non-standalone networking

Info

Publication number: WO2021120243A1
Application number: PCT/CN2019/127952
Authority: WO
Inventors: 曹原; 胡自洁; 倪楠; 倪建兴
Original assignee: 锐石创芯(重庆)科技有限公司
Priority date: 2019-12-17
Filing date: 2019-12-24
Publication date: 2021-06-24
Also published as: CN111049482A

Abstract

Disclosed is an architecture of a 5G power amplifier supporting non-standalone networking. The amplifier comprises: a first amplification group for supporting 5G and 4G frequency bands; a second amplification group for supporting 4G frequency bands; and a third amplification group for supporting 4G frequency bands. The 4G frequency bands supported by the first amplification group, the second amplification group, and the third amplification group can be the same or different frequency bands. The present invention allows integration of amplification groups supporting 4G and 5G frequency bands, enables simultaneous use of 4G and 5G frequency bands in 5G non-standalone networking, reduces the dimensions of power amplifier chips and modules to facilitate integration, and reduces the design complexity and costs of radio-frequency circuits. In addition, the power amplifier of the present invention does not require an additional 5G N41 PA module.

Description

A 5G power amplifier architecture supporting non-independent networking

Technical field

The invention belongs to the field of electronic components, and in particular relates to a 5G power amplifier architecture supporting non-independent networking.

Background technique

The radio frequency power amplifier (RF PA) is an important part of various wireless transmitters. In the pre-stage circuit of the transmitter, the power of the radio frequency signal generated by the modulation oscillator circuit is very small, and it needs to go through a series of amplification, a buffer stage, an intermediate amplifier stage, and a final power amplifier stage to obtain sufficient RF power before it can be fed. Radiate to the antenna. The working frequency of the radio frequency power amplifier is very high, but the relative frequency band is relatively narrow. The radio frequency power amplifier generally adopts the frequency selective network as the load loop.

Two working modes are defined in the 5G standard: non-independent networking mode and independent networking mode. Among them, the non-independent networking mode, as a bridge between 4G and 5G networks, will be the first to be applied and will exist for a long time. In the non-independent networking mode, the terminal equipment is required to support N41+B1/B3 to work at the same time, which also increases the design difficulty of the RF front-end power amplifier (PA) module. The main solution currently adopted in the industry is to use two independent PA modules as N41 and B3/B39 respectively. This solution also greatly increases the cost of radio frequency PA modules while achieving basic functions.

Summary of the invention

In order to solve the technical problems existing in the prior art, the purpose of the present invention here is to provide a 5G power amplifier architecture supporting non-independent networking that can realize simultaneous operation of the 4G frequency band and the 5G frequency band of the 5G non-independent networking.

In order to achieve the purpose of the present invention, the 5G power amplifier architecture supporting non-independent networking provided here includes:

The first amplification group is used to support 5G frequency band and 4G frequency band;

The second amplification group is used to support the 4G frequency band; and,

The third amplification group is used to support the 4G frequency band;

The frequency bands of the 4G frequency band supported by the first amplification group, the second amplification group, and the third amplification group are the same or different.

Further, the amplifier architecture provided by the present invention further includes a first power pin, a second power pin, a third power pin, and a fourth power pin. The first amplifying group uses the first power pin and The second power supply pin; the second amplification group and the third amplification group share the third power supply pin and the fourth power supply pin.

Further, the first power pin and the second power pin are powered by one power source, and the third power pin and the fourth power pin are powered by another power source.

Further, the power amplifier architecture provided by the present invention further includes a controller that provides bias currents for the first amplifying group, the second amplifying group, and the third amplifying group.

Further, the controller includes a first bias circuit and a second bias circuit, the first bias circuit provides a bias signal for the first amplifying group; the second bias circuit is the The second amplifying group and the third amplifying group provide bias signals.

The beneficial effects of the present invention include:

1. The present invention integrates an amplifier group supporting 4G frequency band and 5G frequency band, realizes simultaneous operation of 4G frequency band and 5G frequency band of 5G non-independent networking, reduces the area of power amplifier chips and modules, and is easy to integrate; and reduces the radio frequency circuit Design complexity and cost; when using the power amplifier provided by the present invention, no additional 5G PA module is required.

2. Design four power pins, the first amplifying group uses two alone, the second amplifying group and the third amplifying group share two, which improves the isolation between each amplifying group and reduces interference.

3. Two sets of bias circuits are used to provide bias currents to the amplifying group respectively to realize any combination of 4G and 5G.

Description of the drawings

The drawings here are incorporated into the specification and constitute a part of the specification, show embodiments consistent with the present invention, and together with the specification are used to explain the principle of the present invention. Obviously, the drawings in the following description are only some embodiments of the present invention. For those of ordinary skill in the art, other drawings can be obtained based on these drawings without creative work. In the attached picture:

Figure 1 shows one of the schematic diagrams of the circuit structure of the power amplifier architecture provided by the present invention;

FIG. 2 shows the second schematic diagram of the circuit structure of the power amplifier architecture provided by the present invention;

FIG. 3 shows a schematic diagram of the circuit structure of the amplifier group of the power amplifier architecture provided by the present invention;

4 shows a schematic diagram of the circuit structure of the bias circuit of the power amplifier architecture provided by the present invention;

Fig. 5 shows a circuit connection diagram between the bias circuit and the amplifying group provided by the present invention;

In the figure: 1-first amplifying group, 2-second amplifying group, 3-third amplifying group, 4-controller, 5-input matching circuit, 6-first-stage amplifier, 7-intermediate matching circuit, 8- The second stage amplifier, 9-output matching circuit, 10-switch, 41-first bias circuit, 42-second bias circuit, 43-third bias circuit.

Detailed ways

Example embodiments will now be described more fully with reference to the accompanying drawings. However, the example embodiments can be implemented in various forms, and should not be construed as being limited to the examples set forth herein; on the contrary, the provision of these embodiments makes the present invention more comprehensive and complete, and fully conveys the concept of the example embodiments To those skilled in the art.

In addition, the described features, structures, or characteristics may be combined in one or more embodiments in any suitable manner. In the following description, many specific details are provided to give a sufficient understanding of the embodiments of the present disclosure. However, those skilled in the art will realize that the technical solutions of the present disclosure can be practiced without one or more of the specific details, or other methods, elements, etc. can be used. In other cases, well-known structures, methods, or operations are not shown or described in detail in order to avoid obscuring various aspects of the present disclosure.

First, introduce the English terminology used in this disclosure.

HB = High Band, MB = Mid Band, LB = Low Band, PA = power amplifier, N41 is the 5G frequency band.

The following will introduce in detail the 5G power amplifier supporting non-independent network groups disclosed herein.

Figure 1 and Figure 2 show the exemplary structure of the 5G power amplifier architecture that supports non-independent networking. In this article, the first amplification group 1 supports the N41 5G frequency band and 4G HB frequency band, and the second amplification group 2 supports 4G MB The third amplifier group 3 supports the 4G LB frequency band as an example to introduce the power amplifier architecture of the embodiment of the present disclosure, but those skilled in the art will understand that the first amplifier group 1 supports the N41 5G frequency band and 4G HB frequency band, and the second amplifier group 1 supports the N41 5G frequency band and the 4G HB frequency band. 2 Supporting the 4G MB frequency band, and the third amplification group 3 supporting the 4G LB frequency band is only exemplary, and not as a limitation of the power amplifier architecture of the embodiment of the present disclosure.

Example one

The 5G power amplifier architecture supporting non-independent network groups provided in this embodiment includes a first amplification group 1, a second amplification group 2, and a third amplification group 3. The first amplification group 1 is used to support the N41 5G frequency band and the 4G HB frequency band , The second amplification group 2 is used to support the 4G MB frequency band, and the third amplification group 3 is used to support the 4G LB frequency band. The first amplifying group 1, the second amplifying group 2 and the third amplifying group 3 are independent HB/N41 PA module, MB PA module and LB PA module. The input pin of HB/N41 PA module is HB/N41-IN , The output pin is HB/N41-OUT; the input pin of the MB PA module is MB-IN, and the output pin is MB-OUT; the input pin of the LB PA module is LB-IN, and the output pin is LB-OUT .

Among them, the N41 5G frequency band ranges from 2496MHz to 2690MHz, the 4G HB frequency band ranges from 2300MHz to 2690MHz; the 4G MB frequency band ranges from 1710MHz to 1980MHz; and the 4G LB frequency band ranges from 663MHz to 915MHz.

The working modes of the 5G power amplifier architecture supporting non-independent network groups provided in this embodiment include: N41/HB and MB, and N41/HB and LB. The first amplification group 1 supports both the 5G N41 frequency band and the 4G HB frequency band, and no additional 5G N41 PA module is required.

The working principle of the 5G power amplifier architecture supporting non-independent network groups provided in this embodiment is: the signal to be amplified is input from the HB/N41-IN pin, MB-IN pin, and LB-IN pin to the corresponding HB/N41 PA Module, MB PA module and LB PA module, after the HB/N41 PA module, MB PA module and LB PA module process the signals to be amplified, the signals are processed from HB/N41-OUT pin, MB-OUT pin, LB-OUT pin Output.

The working modes supported by the PA module of this patent are:

1) Two PAs of N41+MB work at the same time;

2) N41+LB two PAs work at the same time;

3) N41 works alone;

4) HB works alone;

5) MB works alone;

6) LB works alone.

Example two

The 5G power amplifier architecture supporting non-independent network groups provided in this embodiment includes all the technical features of the 5G power amplifier architecture supporting non-independent network groups provided in the first embodiment, and also includes the first power supply pin N41_HB_VCC1 and the second power supply pin. Pin N41_HB_VCC2, third power supply pin MB_LB_VCC1 and fourth power supply pin MB_LB_VCC2, the first amplification group uses the first power supply pin N41_HB_VCC1 and the second power supply pin N41_HB_VCC2; the second amplification group and the third amplification group share the third power supply pin Pin MB_LB_VCC1 and the fourth power supply pin MB_LB_VCC2, as shown in Figure 1-Figure 2.

The first power pin N41_HB_VCC1, the second power pin N41_HB_VCC2, the third power pin MB_LB_VCC1, and the fourth power pin MB_LB_VCC2 can be powered by a single power supply, where the first power pin N41_HB_VCC1 and the second power pin N41_HB_VCC2 are powered by DC -DC power supply 2 is powered, and the third power supply pin MB_LB_VCC1 and the fourth power supply pin MB_LB_VCC2 are powered by DC-DC power supply 1 respectively; dual power supply further improves the isolation between each amplification group and reduces interference.

Example three

The 5G power amplifier architecture supporting non-independent network groups provided in this embodiment includes all the technical features of the 5G power amplifier architecture supporting non-independent network groups provided in the first and second embodiments, and also includes the first amplification group 1, The second amplifying group 2 and the third amplifying group 3 provide the controller 4 of the bias current.

The controller 4 includes the following two structures:

As shown in FIG. 1, the first type: includes a first bias circuit 41 and a second bias circuit 42. The first bias circuit 41 is electrically connected to the first amplifying group 1 to provide a bias current for the first amplifying group 1. ; The second bias circuit 42 is electrically connected to the second amplifying group 2 and the third amplifying group 3, respectively, to provide a bias current for the second amplifying group 2 and the third amplifying group 3, respectively. The first bias circuit 41 controls the operation of the first amplifying group 1, and the second bias circuit 42 controls the second amplifying group 2 and the third amplifying group 3 to work at the same time, or only controls the second amplifying group 2 or the third amplifying group. 3 work.

The first bias circuit 41 and the second bias circuit 42 may have only one bias or multiple biases. Here, three biases are used, that is, the first bias circuit 41 and the second bias circuit 42 Including three-way offset respectively, as shown in Figure 4.

When the first bias circuit 41 and the second bias circuit 42 are three-way biased, the circuit connection relationship with the first amplifying group 1, the second amplifying group 2 and the third amplifying group 3 is shown in FIG. 5 , The three biases of the first bias circuit 41 are directly loaded on the first amplifying group 1, and the three biases of the second bias circuit 42 are respectively loaded on the second amplifying group 2 and the third amplifying group 3 through the switch 10 on.

The design of the multi-path bias and switch 10 realizes the controllability of frequency band selection. The switch 10 can be a single-pole double-throw switch or a single-pole multi-throw switch.

As shown in Figure 2, the second type: includes a first bias circuit 41, a second bias circuit 42, and a second bias circuit that provide bias signals for the first amplifying group 1, the second amplifying group 2 and the third amplifying group 3 respectively. Three bias circuit 43. The first bias circuit 41, the second bias circuit 42, and the third bias circuit 43 can control the operation of the first amplification group 1, the second amplification group 2 and the third amplification group 3 at the same time, or only control the first amplification group 1. One or both of the second amplification group 2 and the third amplification group 3 work.

The first bias circuit 41, the second bias circuit 42, and the third bias circuit 43 may have only one bias or multiple biases. In this embodiment, three biases are used, that is, the first bias The circuit 41, the second bias circuit 42, and the third bias circuit 43 respectively include three biases, as shown in FIG. 4; or the first bias circuit 41, the second bias circuit 42, and the third bias circuit One or two of 43 include three-way offset, and the rest are one-way or two-way offset.

The outputs of the first bias circuit 41, the second bias circuit 42, and the third bias circuit 43 are directly loaded on the first amplifying group 1, the second amplifying group 2, and the third amplifying group 3.

The first bias circuit 41, the second bias circuit 42, and the third bias circuit 43 in the first and second types of controllers can adopt any one. Here, a bias circuit composed of one or more COM current sources is used. Set the circuit, as shown in Figure 4 and Figure 5.

FIG. 3 shows the specific circuit structure of the first amplification group 1, the second amplification group 2 and/or the third amplification group 3 recorded in the first embodiment, the second embodiment, and the third embodiment, including the input matching circuit 5, The first stage amplifier 6, the intermediate matching circuit 7, the second stage amplifier 8 and the output matching circuit 9.

The present disclosure has been described by the above-mentioned related embodiments, but the above-mentioned embodiments are only examples for implementing the present disclosure. It must be pointed out that the disclosed embodiments do not limit the scope of the present disclosure. On the contrary, changes and modifications made without departing from the spirit and scope of the present disclosure fall within the scope of patent protection of the present disclosure.

Claims

A 5G power amplifier architecture supporting non-independent networking, characterized in that the amplifier architecture includes:

The first amplification group is used to support 5G frequency band and 4G frequency band;

The second amplification group is used to support the 4G frequency band; and,

The third amplification group is used to support the 4G frequency band;

The frequency bands of the 4G frequency band supported by the first amplification group, the second amplification group, and the third amplification group are the same or different.
The 5G power amplifier architecture supporting non-independent networking according to claim 1, wherein: the first amplifying group, the second amplifying group, and/or the third amplifying group include an input matching circuit, a second One-stage amplifier, intermediate matching circuit, second-stage amplifier and output matching circuit.
The 5G power amplifier architecture supporting non-independent networking according to claim 1 or 2, characterized in that it further comprises a first power pin, a second power pin, a third power pin, and a fourth power pin, The first amplification group uses the first power supply pin and the second power supply pin; the second amplification group and the third amplification group share the third power supply pin and the fourth power supply Pin.
The 5G power amplifier architecture supporting non-independent networking according to claim 3, characterized in that: the first power pin and the second power pin are powered by one power source, and the third power pin and The fourth power supply pin is powered by another power supply.
The 5G power amplifier architecture supporting non-independent networking according to claim 1 or 2, characterized in that it further comprises providing bias for the first amplifying group, the second amplifying group, and the third amplifying group Current controller.
The 5G power amplifier architecture supporting non-independent networking according to claim 5, wherein the controller includes a first bias circuit and a second bias circuit, and the first bias circuit is the second bias circuit. An amplifying group provides a bias current; the second bias circuit provides a bias current for the second amplifying group and the third amplifying group respectively.
The 5G power amplifier architecture supporting non-independent networking according to claim 6, wherein the first bias circuit includes three-way bias.
The 5G power amplifier architecture supporting non-independent networking according to claim 6 or 7, characterized in that: the second bias circuit includes three biases, and each bias is passed through a single-pole double-throw switch or a single-pole multiplex switch. The throw switch output is loaded on the second amplifying group and the third amplifying group.
The 5G power amplifier architecture that supports non-independent networking according to claim 5, wherein the controller includes providing for the first amplifying group, the second amplifying group, and the third amplifying group, respectively. The first bias circuit, the second bias circuit and the third bias circuit of the bias signal.
The 5G power amplifier architecture supporting non-independent networking according to claim 9, wherein the first bias circuit, the second bias circuit and/or the third bias circuit comprise three Bias.
The 5G power amplifier architecture supporting non-independent networking according to claim 1, wherein the 5G frequency band range supported by the first amplifying group is 2496MHz-2690MHz, and the 4G frequency band range is 2300MHz-2690MHz; the second The 4G frequency band range supported by the amplification group is 1710MHz-1980MHz; the 4G frequency band range supported by the third amplification group is 663MHz-915MHz.