WO2021051386A1

WO2021051386A1 - Ultrasonic cleaning device, and cleaning method and application thereof

Info

Publication number: WO2021051386A1
Application number: PCT/CN2019/106986
Authority: WO
Inventors: 蔡飞燕; 邹峰; 夏向向; 邱维宝; 李永川; 郑海荣
Original assignee: 深圳先进技术研究院
Priority date: 2019-09-20
Filing date: 2019-09-20
Publication date: 2021-03-25

Abstract

An ultrasonic cleaning device, and a cleaning method and an application thereof. The ultrasonic cleaning device comprises a single-channel signal transmitter (10), a single-channel transducer (20), a gradient spiral sound structure member (30) disposed on a transmitting end of the single-channel transducer (20) and configured to generate a vortex sound field, and a water tank (40) configured to contain a cleaning liquid medium. Both the single-channel signal transmitter (10) and the gradient spiral sound structure member (30) are disposed in the water tank (40) and located below an object to be cleaned. The vortex sound field generated by the device has a shear force perpendicular to a transmitting direction, and therefore, cavitation damage caused by cavitation can be avoided.

Description

Ultrasonic cleaning device, cleaning method and application

Technical field

This application relates to the technical field of ultrasonic cleaning, in particular to an ultrasonic cleaning device, cleaning method and application thereof.

Background technique

The surfaces of precious metal materials, high-precision optical components, and semiconductor materials require regular maintenance and cleaning. Conventional ultrasonic cleaning or high-frequency ultrasonic cleaning is usually used, that is, the cavitation and secondary effects of cavitation in the liquid are used to produce micro The jet impact directly or indirectly affects the dirt attached to the surface of the object to be cleaned, so as to achieve the cleaning purpose of the dirt layer being dispersed, emulsified and peeled off.

However, the related-art ultrasonic cleaning device relies on the cavitation effect or the high-pressure direct-flow washing capability, which causes damage to the surface of the object to be cleaned.

technical problem

The purpose of the embodiments of the present application is to provide an ultrasonic cleaning device, a cleaning method and an application thereof, aiming to solve the problem of damage to the surface of the object to be cleaned caused by the existing ultrasonic cleaning device relying on the cavitation effect for cleaning.

Technical solutions

In order to solve the above technical problems, the technical solutions adopted in the embodiments of this application are:

In a first aspect, an ultrasonic cleaning device is provided, which includes a single-channel signal transmitter for transmitting ultrasonic waves, a single-channel transducer for electrically connecting with the single-channel signal transmitter, and a single-channel transducer provided in the single-channel. A gradient spiral acoustic structure used to generate a vortex sound field at the transmitter end of the transducer and a water tank used to contain the cleaning liquid medium, the single-channel transducer and the gradient spiral acoustic structure are both placed in the water tank Inside and below the object to be cleaned.

In one embodiment, the gradient spiral acoustic structure includes a base for connecting the single-channel transducer and a plurality of medium conducting columns with fan-shaped cross-sections for emitting vortex sound, each of the medium conducting columns The height of each of the media conduction columns along the axis of the base is evenly arranged on the base with the central axis of the base as the center

And increasing from the starting position in the circumferential direction of the base, where h _n is the height of the current dielectric conduction column, n is the total number of each dielectric conduction column, and n _n is the current dielectric conduction column Rank, h ₀ is the preset height, m is the order of the vortex sound field.

In an embodiment, the number of the dielectric conductive pillars is eight, and the height of each dielectric conductive pillar is sequentially

And h ₈ =h ₀ .

In an embodiment, the number of the dielectric conduction pillars is twelve, and the height of each dielectric conduction pillar is sequentially

And h ₁₂ =h ₀ .

In one embodiment, the gradient spiral acoustic structure includes a base for connecting the single-channel transducer and a plurality of medium conduction column groups for emitting a vortex sound field, and the base includes a center axis of the base. A number of fan-shaped placement areas are equally divided for the center, and each of the dielectric conductive column groups is symmetrically arranged in the corresponding fan-shaped placement area with the central axis of the base as the center, and each of the dielectric conductive column groups includes a plurality of conductive sub-pillars, each The height of the transmission sub-column along the axis of the base

And increasing from the starting position in the circumferential direction of the base, where h _n is the current height of the conductive sub-pillars, n is the total number of the conductive sub-pillars, and n _n is the current of the conductive sub-pillars Rank, h ₀ is the preset height.

In one embodiment, the base includes four fan-shaped placement areas, the number of dielectric conductive column groups is four, and each dielectric conductive column group includes three conductive sub-pillars, and each fan-shaped The height of each of the conductive sub-pillars in the placement area is

And h ₃ =h ₀ .

In one embodiment, each of the dielectric conductive columns is a resin dielectric conductive column, and the preset height range of the resin dielectric conductive column is 2.5mm≤h ₀ ≤4.5mm.

In one embodiment, each of the dielectric conductive columns is a metallic dielectric conductive column, and the preset height range of the metallic dielectric conductive column is 1.5mm≤h ₀ ≤6.5mm.

In an embodiment, the sound wave frequency range of the single-channel signal transmitter is greater than or equal to 200KHz and less than or equal to 100MHz.

In an embodiment, the ultrasonic cleaning device further includes a fixing frame, which is suspended directly above the gradient spiral acoustic structure.

In a second aspect, a cleaning method of the above-mentioned ultrasonic cleaning device is provided, and the cleaning method includes the following steps:

Pre-treat the objects to be cleaned;

Immersing the object to be cleaned and the gradient spiral acoustic structure of the ultrasonic cleaning device in the liquid cleaning medium, and the object to be cleaned is located directly above the gradient spiral acoustic structure of the ultrasonic cleaning device;

The cleaning parameters are: the cleaning time range is 1min≤t≤4h; the cleaning temperature range is 18°C≤T≤80°C; the acoustic frequency range of the single-channel signal transmitter of the ultrasonic cleaning device is greater than or equal to 200KHz and less than or equal to 100MHz.

In one embodiment, the step of preprocessing the object to be cleaned includes cutting, grouping and pre-soaking.

In one embodiment, the object to be cleaned and the gradient spiral acoustic structure of the ultrasonic cleaning device are immersed in the liquid cleaning medium, and the object to be cleaned is located in the gradient spiral acoustic structure of the ultrasonic cleaning device. Right above the part, the surface of the object to be cleaned is perpendicular, parallel or at an angle to the sound wave emission direction of the gradient spiral acoustic structural part of the ultrasonic cleaning device.

In one embodiment, the cleaning time range is 1h≤t≤2h.

In an embodiment, the cleaning temperature range is 30°C≤T≤60°C.

In one embodiment, the sound wave frequency range of the single-channel signal transmitter of the ultrasonic cleaning device is greater than or equal to 1 MHz and less than or equal to 5 MHz.

In a third aspect, an application of the above-mentioned ultrasonic cleaning device is provided for cleaning metals, optical components and semiconductor materials.

The beneficial effects of the ultrasonic cleaning device provided by the embodiments of the application are: the ultrasonic cleaning device has the following working process: the single-channel signal transmitter emits ultrasonic sound waves, after passing through the single-channel transducer, the gradient spiral acoustic structure is emitted to the outside A vortex sound field is formed. The vortex sound field has a shear force perpendicular to the emission direction. The shear force of the vortex sound field is used to act on the surface of the object to be cleaned for cleaning, so as to avoid cavitation damage caused by cavitation. At the same time, compared to the conventional high-frequency ultrasonic sound wave, the propagation direction must be parallel to the surface of the object to be cleaned in order to obtain the cleaning effect. The ultrasonic cleaning device provided in the present application satisfies multiple cleaning angles, and limits the spatial orientation of the object to be cleaned. , Can make the object to be cleaned get better cleaning effect from multiple angles, avoid the original limitation, and make it more feasible in practical application.

Description of the drawings

In order to more clearly describe the technical solutions in the embodiments of the present application, the following will briefly introduce the accompanying drawings that need to be used in the embodiments or exemplary technical descriptions. Obviously, the accompanying drawings in the following description are only of the present application. For some embodiments, those of ordinary skill in the art can obtain other drawings based on these drawings without creative work.

FIG. 1 is a schematic structural diagram of an ultrasonic cleaning device provided by an embodiment of the present application;

2 is a schematic diagram of cleaning the vortex sound field generated by the ultrasonic cleaning device provided by an embodiment of the present application;

3 is a schematic structural diagram of a gradient spiral acoustic structure of an ultrasonic cleaning device provided by an embodiment of the present application;

4 is a front view of a gradient spiral acoustic structure of an ultrasonic cleaning device provided by an embodiment of the present application;

5 is another front view of the gradient spiral acoustic structure of the ultrasonic cleaning device provided by an embodiment of the present application;

FIG. 6 is a schematic diagram of the phase of the ultrasonic sound waves of the ultrasonic cleaning device provided by an embodiment of the present application changing with height after passing through the resin medium conductive columns;

FIG. 7 is a comparison diagram of an ultrasonic cleaning device used for cleaning glass sheets according to another embodiment of the present application;

FIG. 8 is a comparison diagram of an ultrasonic cleaning device used for cleaning copper sheets according to another embodiment of the present application;

FIG. 9 is another structural schematic diagram of the gradient spiral acoustic structure of the ultrasonic cleaning device provided by an embodiment of the present application.

Embodiments of the present invention

In order to make the purpose, technical solutions, and advantages of this application clearer, the following further describes this application in detail with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described here are only used to explain the present invention, and are not used to limit the present application.

It should be noted that when a component is referred to as being "fixed on" or "installed on" another component, it can be directly on the other component or indirectly on the other component. When a component is said to be "connected" to another component, it can be directly or indirectly connected to the other component. The terms "upper", "lower", "left", "right", etc. indicate the orientation or positional relationship based on the orientation or positional relationship shown in the drawings, and are only for ease of description, and do not indicate or imply the device referred to. Or the element must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be construed as a limitation of the present application. For those of ordinary skill in the art, the specific meaning of the above terms can be understood according to specific conditions. The terms "first" and "second" are only used for ease of description, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of technical features. The meaning of "plurality" means two or more than two, unless otherwise specifically defined.

In order to illustrate the technical solutions of the present application, detailed descriptions are given below in conjunction with specific drawings and embodiments.

1 and 2, the ultrasonic cleaning device provided by the embodiment of the present application includes a single-channel signal transmitter 10 for transmitting ultrasonic waves, and a single-channel transducer 20 for electrically connecting with the single-channel signal transmitter 10 A gradient spiral acoustic structure 30 for generating a vortex sound field and a water tank 40 for containing the cleaning liquid medium are provided at the emitting end of the single-channel transducer 20. The single-channel transducer 20 and the gradient spiral acoustic structure 30 are both placed in the sink 40 and below the object to be cleaned, and the single-channel transducer 20 and the gradient spiral acoustic structure 30 are both immersed in the cleaning liquid medium. It is understandable that the ultrasonic sound wave forms a vortex sound field after passing through the gradient spiral acoustic structure 30, and the vortex sound field provides a shear force in the cleaning liquid medium to act on the surface of the object to be cleaned.

The working process of the ultrasonic cleaning device provided by the embodiment of the present application is as follows: the single-channel signal transmitter 10 emits ultrasonic sound waves, and after passing through the single-channel transducer 20, the gradient spiral acoustic structure 30 emits to the outside to form a vortex sound field, The vortex sound field has a shear force F perpendicular to the emission direction, and the shear force F of the vortex sound field is used to act on the surface of the object to be cleaned for cleaning, so as to avoid cavitation damage caused by cavitation. At the same time, compared to the conventional high-frequency ultrasonic sound wave, the propagation direction must be parallel to the surface of the object to be cleaned in order to obtain the cleaning effect. The ultrasonic cleaning device provided in the present application satisfies multiple cleaning angles, and limits the spatial orientation of the object to be cleaned. , Can make the object to be cleaned get better cleaning effect from multiple angles, avoid the original limitation, and make it more feasible in practical application.

Please refer to FIGS. 1 to 4, in this embodiment, the gradient spiral acoustic structure 30 includes a base 31 with a circular cross-section for connecting the single-channel transducer 20 and a plurality of cross-sections for emitting vortex sound. A medium conductive column 32 in a sector shape. Understandably, one end of the base 31 is used to connect the single-channel transducer 20, and the other end is used to connect the dielectric conductive columns 32a. The dielectric conductive columns 32a are equally arranged on the base 31 with the center axis of the base 31 as the center. It can be understood that in the radial direction of the base 31, the cross-sectional areas of the dielectric conductive columns 32a are equal. The height of each dielectric conducting column 32a along the axis of the base 31

And the starting position increases in sequence along the circumferential direction of the base 31. It can be understood that starting from the initial dielectric conducting column 32, along the circumferential direction of the base 31, the height of each dielectric conducting column 32a increases in sequence according to the above formula until the end The dielectric conduction column 32a ends. Among them, h _n is the height of the current dielectric conduction column 32a, n is the total number of each dielectric conduction column 32a, n _n is the rank of the current dielectric conduction column 32a, h ₀ is the preset height, and m is the order of the vortex sound field . The working principle of the gradient spiral acoustic structure 30 is as follows: Because the propagation speed of ultrasonic sound waves in different media is different, that is, the propagation speed in the liquid transmission medium is different from the propagation speed in the fixed medium. Therefore, when passing through media of different heights, When conducting the column 32a, the ultrasonic sound wave enters the liquid medium in turn according to the height gradient of each medium conducting column 32a to achieve extended emission, that is, passing through the medium conducting column 32a with a shorter height, then enters the liquid medium first. The ultrasonic sound waves output by the two dielectric conductive columns 32a achieve a phase difference, and finally the phase field of the ultrasonic sound wave makes a circle around the central axis of the base 31 to have a phase difference change of 2mπ, that is, an m-order vortex sound field is finally obtained. When m=1, the first-order vortex sound field is obtained.

Please refer to FIG. 4, in one embodiment, the number of dielectric conductive pillars 32 is eight, and the height of each dielectric conductive pillar 32a is sequentially

And h ₈ =h ₀ . Of course, according to actual cleaning requirements, the number of dielectric conductive columns 32 can be increased or decreased.

Please refer to FIG. 5, in another embodiment, the number of dielectric conductive pillars 32a is twelve, and the height of each dielectric conductive pillar 32 is sequentially

And h ₁₂ =h ₀ .

In one embodiment, when the number of dielectric conductive pillars 32a is close to positive infinity, the heights of adjacent dielectric conductive pillars 32a are close, that is, a smooth transitional connection is formed. At this time, each dielectric conductive pillar 32a forms a center along the base. A spiral body that spirally rises in the axial direction, and at the same time, the spiral body can also generate a vortex sound field.

Please refer to FIG. 9, in one embodiment, the gradient spiral acoustic structure 30 includes a base 31 with a circular cross-section for connecting a single-channel transducer, and a plurality of dielectric conductive column groups 32b for emitting a vortex sound field. The base 31 includes a number of fan-shaped placement areas 31a that are equally divided around the center axis of the base. Each dielectric conductive column group 32b is symmetrically arranged in the corresponding fan-shaped placement area 31a with the center axis of the base 31 as the center. Each dielectric conductive column group 32b includes a plurality of conductive Sub-pillar 32b1, the height of each transmission sub-pillar 32b1 along the axis of the base

And from the starting position in the circumferential direction of the base, h _n is the height of the current conductive sub-pillars 32b1, n is the total number of the conductive sub-pillars 32b1, n _n is the rank of the current conductive sub-pillars 32b1, h ₀ Is the preset height. Here, each group of dielectric conductive column groups 32b corresponds to a first-order vortex sound field. It can be understood that the number of dielectric conductive column groups 32b is the same as the order of the vortex sound field.

Please refer to FIG. 9, in one embodiment, the base 31 includes four fan-shaped placement areas 31a, the number of dielectric conductive column groups 32b is four, and each dielectric conductive column group 32b includes three conductive sub-pillars 32b1, each fan-shaped The height of each conductive sub-pillar 32b1 in the placement area 31a is

And h ₃ =h ₀ .

In another embodiment, when the number of conductive sub-pillars 32b1 in the dielectric conductive column group 32b is close to positive infinity, the heights of adjacent conductive sub-pillars 32b1 are close, that is, a smooth transitional connection is formed. The column 32b1 forms a spiral body that spirally rises in the direction of the central axis of the base, and at the same time, the spiral body can also generate a vortex sound field.

In one embodiment, each dielectric conductive column 32 is a resin dielectric conductive column, and the preset height range of the resin dielectric conductive column is 2.5mm≤h ₀ ≤4.5mm. Understandably, different transmission media have different transmission speeds of ultrasonic sound waves, and at the same time, it will also affect the order of the vortex sound field. Please refer to Figure 6. Figure 6 is a schematic diagram of the phase change of the ultrasonic sound wave with height after passing through each resin medium conductive column. In the resin medium conductive column, when the preset height h ₀ =3.5mm, a first-order vortex can be obtained Sound field.

In another embodiment, each dielectric conductive column 32 is a metallic dielectric conductive column, and the preset height range of the metallic dielectric conductive column is 1.5mm≤h ₀ ≤6.5mm. It is understandable that different transmission media have different preset height ranges that satisfy the m-order vortex sound field.

In an embodiment, the sound wave frequency range of the single-channel signal transmitter 10 is greater than or equal to 200 KHz and less than or equal to 100 MHz. Understandably, the sound wave frequency of the single-channel signal transmitter 10 may be 200KHz, 500KHz, 1000KHz, 1MHz, 2MHz, 5MHz, 10MHz, 20MHz, 50MHz, 75MHz, 90MHz, 100MHz.

Please refer to FIG. 1, in one embodiment, the ultrasonic cleaning device further includes a fixing frame 50, and the fixing frame 50 is suspended directly above the gradient spiral acoustic structure 30. Understandably, the fixing frame 50 is used to place the object to be cleaned, and when the object to be cleaned is placed on the fixing frame 50, the surface to be cleaned is perpendicular to the direction of emission of the ultrasonic sound wave of the gradient spiral acoustic structure 30, thereby obtaining Better cleaning effect.

The present application also provides a cleaning method of the above-mentioned ultrasonic cleaning device, the steps of which include the following:

Step 1. Pre-treat the objects to be cleaned;

Step 2: Immerse the object to be cleaned and the gradient spiral acoustic structure of the ultrasonic cleaning device in the liquid cleaning medium, and the object to be cleaned is located directly above the gradient spiral acoustic structure of the ultrasonic cleaning device;

Step 3. The cleaning parameters are: the cleaning time range is 10min≤t≤4h; the cleaning temperature range is 18℃≤T≤40℃; the acoustic frequency range of the single-channel signal transmitter of the ultrasonic cleaning device is greater than or equal to 200KHz and less than or equal to 100MHz .

In one embodiment, the step of pre-processing the object to be cleaned includes cutting, grouping, and pre-soaking. For example, the copper sheet to be cleaned is cut into a square sheet with a length of 3 cm * 0.8 cm in width, and divided into a control group and a test group, and both the control group and the test group are immersed in sewage.

In an embodiment, the surface of the object to be cleaned is perpendicular, parallel or at an angle to the sound wave emission direction of the gradient spiral acoustic structure of the ultrasonic cleaning device. Since the vortex sound field generates shearing force along the direction perpendicular to the emission direction, the cleaning effect is best when the surface of the object to be cleaned is perpendicular to the emission direction of the sound wave.

In one embodiment, the cleaning time range is 1h≤t≤2h.

In one embodiment, the cleaning temperature range is 30°C≤T≤60°C.

For example, please refer to Figure 7. Figure 7(a) is a schematic diagram of the glass sheet before cleaning, and Figure 7(b) is a schematic diagram of the glass sheet in the ultrasonic cleaning device for 10min cleaning time and 25℃ cleaning temperature. You can see the cleaning The surface of the back glass sheet is smooth and flawless. Please refer to Figure 8. Figure 8(a) is a schematic diagram of the copper sheet before cleaning, and Figure 8(b) is a schematic diagram of the copper sheet in the ultrasonic cleaning device for 2h cleaning time and 60℃ cleaning temperature. Compare before and after cleaning, you can see There is no trace of cavitation erosion on the surface of the copper sheet.

This application also provides an application of the above-mentioned ultrasonic cleaning device, which is used for cleaning metals, optical elements and semiconductor materials. Since metals, optical components, and semiconductor materials all have high requirements on the smoothness and flatness of their surfaces, the use of conventional ultrasonic cleaning is prone to cavitation effects, causing the problem of cavitation on the surface.

The above are only optional embodiments of the application, and are not used to limit the application. For those skilled in the art, this application can have various modifications and changes. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of this application shall be included in the scope of the claims of this application.

Claims

The ultrasonic cleaning device is characterized in that it includes a single-channel signal transmitter for transmitting ultrasonic waves, a single-channel transducer for electrically connecting with the single-channel signal transmitter, and a single-channel transducer provided in the single-channel transducer. The gradient spiral acoustic structure of the transmitting end for generating the vortex sound field and the water tank for containing the cleaning liquid medium, the single-channel transducer and the gradient spiral acoustic structure are both placed in the water tank and located in the waiting room. Clean the underside of the object.
The ultrasonic cleaning device according to claim 1, wherein the gradient spiral acoustic structure includes a base for connecting the single-channel transducer and a plurality of medium conduction columns for emitting vortex sound, each The dielectric conductive columns are equally arranged on the base with the center axis of the base as the center, and the height of each dielectric conductive column along the axis of the base
And increasing from the starting position in the circumferential direction of the base, where h n is the height of the current dielectric conduction column, n is the total number of each dielectric conduction column, and n n is the current dielectric conduction column Rank, h 0 is the preset height, m is the order of the vortex sound field.
The ultrasonic cleaning device according to claim 2, characterized in that the number of said medium conduction pillars is eight, and the height of each said dielectric conduction pillar is sequentially

And h 8 =h 0 .
The ultrasonic cleaning device according to claim 2, characterized in that the number of said medium conduction pillars is twelve, and the height of each said dielectric conduction pillar is sequentially

And h 12 =h 0 .
The ultrasonic cleaning device according to claim 1, wherein the gradient spiral acoustic structure includes a base for connecting the single-channel transducer and a plurality of medium conduction column groups for emitting a vortex sound field, so The base includes a number of fan-shaped placement areas that are equally divided around the center axis of the base, and each of the dielectric conductive column groups is symmetrically disposed in the corresponding fan-shaped placement area about the center axis of the base. The column set includes a number of conductive sub-pillars, and the height of each of the transmission sub-pillars along the axis of the base
And increasing from the starting position in the circumferential direction of the base, where h n is the height of the current dielectric conduction column, n is the total number of each dielectric conduction column, and n n is the current dielectric conduction column Rank, h 0 is the preset height.
The ultrasonic cleaning device according to claim 5, wherein the base includes four fan-shaped placement areas, the number of medium conductive column groups is four, and each medium conductive column group includes three Conductive sub-pillars, the heights of the conductive sub-pillars in each fan-shaped placement area are sequentially
And h 3 =h 0 .
The ultrasonic cleaning device according to claim 2 or 5, wherein each of the dielectric conductive columns is a resin dielectric conductive column, and the sound wave frequency range of the single-channel signal transmitter is greater than or equal to 200KHz and less than or equal to 10MHz, so The preset height range of the resin medium conductive column is 1.0mm≤h 0 ≤3cm.
The ultrasonic cleaning device according to claim 2 or 5, wherein each of the dielectric conductive columns is a metallic dielectric conductive column, and the sound wave frequency range of the single-channel signal transmitter is greater than or equal to 200KHz and less than or equal to 10MHz, so The preset height range of the metal dielectric conductive column is 1.5mm≤h 0 ≤2cm.
The ultrasonic cleaning device according to claim 1, wherein the sound wave frequency range of the single-channel signal transmitter is greater than or equal to 200KHz and less than or equal to 100MHz.
The ultrasonic cleaning device according to claim 1, wherein the ultrasonic cleaning device further comprises a fixing frame for placing the object to be cleaned, and the fixing frame is suspended directly above the gradient spiral acoustic structure.
The cleaning method of an ultrasonic cleaning device according to claim 1, wherein the cleaning method comprises the following steps:

Pre-treat the objects to be cleaned;

Immersing the object to be cleaned and the gradient spiral acoustic structure of the ultrasonic cleaning device in the liquid cleaning medium, and the object to be cleaned is located directly above the gradient spiral acoustic structure of the ultrasonic cleaning device;

The cleaning parameters are: the cleaning time range is 1min≤t≤4h; the cleaning temperature range is 18°C≤T≤80°C; the acoustic frequency range of the single-channel signal transmitter of the ultrasonic cleaning device is greater than or equal to 200KHz and less than or equal to 100MHz.
The cleaning method of an ultrasonic cleaning device according to claim 11, wherein the step of preprocessing the object to be cleaned includes cutting, grouping, and pre-soaking.
The cleaning method of an ultrasonic cleaning device according to claim 11, wherein the object to be cleaned and the gradient spiral acoustic structure of the ultrasonic cleaning device are immersed in a liquid cleaning medium, and the object to be cleaned is located Right above the gradient spiral acoustic structure of the ultrasonic cleaning device, the surface of the object to be cleaned is perpendicular, parallel or at an angle to the sound wave emission direction of the gradient spiral acoustic structure of the ultrasonic cleaning device.
The cleaning method of an ultrasonic cleaning device according to claim 11, wherein the cleaning time range is 1h≤t≤2h.
The cleaning method of the ultrasonic cleaning device according to claim 11, wherein the cleaning temperature range is 30°C≤T≤60°C.
The cleaning method of an ultrasonic cleaning device according to claim 11, wherein the sound wave frequency range of the single-channel signal transmitter of the ultrasonic cleaning device is greater than or equal to 1 MHz and less than or equal to 5 MHz.
The application of the ultrasonic cleaning device according to claim 1, wherein the ultrasonic cleaning device is used for cleaning metals, optical elements and semiconductor materials.