WO2021035779A1 - Procédé et dispositif de mesure de perte de guide d'onde sur puce, et procédé de fabrication associé - Google Patents

Procédé et dispositif de mesure de perte de guide d'onde sur puce, et procédé de fabrication associé Download PDF

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Publication number
WO2021035779A1
WO2021035779A1 PCT/CN2019/104252 CN2019104252W WO2021035779A1 WO 2021035779 A1 WO2021035779 A1 WO 2021035779A1 CN 2019104252 W CN2019104252 W CN 2019104252W WO 2021035779 A1 WO2021035779 A1 WO 2021035779A1
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waveguide
optical coupler
silicon
chip
linear
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PCT/CN2019/104252
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English (en)
Chinese (zh)
Inventor
汪巍
方青
涂芝娟
曾友宏
蔡艳
余明斌
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上海新微技术研发中心有限公司
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Publication of WO2021035779A1 publication Critical patent/WO2021035779A1/fr

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01M—TESTING STATIC OR DYNAMIC BALANCE OF MACHINES OR STRUCTURES; TESTING OF STRUCTURES OR APPARATUS, NOT OTHERWISE PROVIDED FOR
    • G01M11/00—Testing of optical apparatus; Testing structures by optical methods not otherwise provided for
    • G01M11/02—Testing optical properties

Definitions

  • This application relates to the field of semiconductor technology, and in particular to a method for measuring waveguide loss on a silicon substrate, a measuring device and a manufacturing method thereof.
  • Silicon photonics is a new generation technology based on silicon and silicon-based substrate materials (such as SiGe/Si, SOI, etc.) that uses the existing CMOS process to develop and integrate optical devices. It combines the ultra-large-scale, ultra-large-scale technology of integrated circuit technology. The characteristics of high-precision manufacturing and the advantages of ultra-high speed and ultra-low power consumption of photonic technology. Silicon photonics not only has urgent application requirements in the field of optical communication and optical interconnection at this stage, but also a potential technology for realizing in-chip optical interconnection and optical computers in the future.
  • the transmission loss of silicon waveguides is one of the important characterization parameters of silicon optical wafers.
  • the cut-back method is usually used to measure the waveguide loss.
  • the inventor of the present application found that when using the existing cut-back method to measure waveguide loss, light needs to be coupled into multiple waveguides of different lengths. Inconsistent fiber/coupler performance and inconsistent coupling alignment accuracy will all affect Measurement accuracy. In order to achieve relatively accurate measurement, it is necessary to design waveguide structures of different lengths, occupying a large amount of chip space; in addition, the output light needs to enter the external detector through the coupling structure to measure the output power, which further increases the measurement error and cost.
  • the embodiments of the application provide an on-chip waveguide loss measurement method, an on-chip waveguide loss measurement device, and a manufacturing method thereof.
  • the on-chip waveguide loss measurement device integrates a linear waveguide and a ring resonator, and the linear waveguide is optically coupled with part of the wavelength Into the ring cavity, the light of other wavelengths in the linear waveguide is output and detected by the photodetector.
  • the heater adjusts the temperature of the ring cavity.
  • the on-chip waveguide loss measurement device of the present application can effectively reduce the accuracy requirements for the alignment of the optical fiber and the chip, reduce the area of the waveguide loss measurement structure, and realize efficient and rapid waveguide loss measurement.
  • an on-chip waveguide loss measurement device including:
  • An optical coupler formed in the top silicon of a silicon-on-insulator (SOI) substrate;
  • a polarization adjustment element located on the side of the linear waveguide close to the optical coupler, the polarization adjustment element adjusting the polarization state of the light in the linear waveguide;
  • a photodetector which is formed on the top layer of silicon, detects the light output from the light output end of the linear waveguide and generates a current
  • the heater is formed at a predetermined distance from the ring resonant cavity.
  • the on-chip waveguide loss measurement device further includes:
  • a covering layer covers the optical coupler, the linear waveguide, the ring cavity, the polarization adjustment element, the photodetector, and the heater.
  • the covering layer has an opening, and the optical coupler is located under the opening.
  • the optical coupler is an end coupler or a grating coupler.
  • the photodetector is a germanium (Ge) detector or a germanium tin (GeSn) detector.
  • a method for measuring on-chip waveguide loss is provided.
  • the on-chip waveguide loss measurement device described in any one of the above is used to measure the on-chip waveguide loss, and the measurement method includes:
  • the loss of the on-chip waveguide is calculated.
  • a manufacturing method of an on-chip waveguide loss measurement device including:
  • An optical coupler is formed in the top silicon of a silicon-on-insulator (SOI) substrate;
  • a linear waveguide cavity and a ring resonant cavity are formed in the top layer of silicon, wherein the light incident end of the linear waveguide and the light exit end of the optical coupler are laterally opposed, and the ring resonant cavity is opposite to the light emitting end of the optical coupler.
  • the minimum distance between the linear waveguides is the first distance;
  • a heater is formed at a predetermined distance from the ring cavity.
  • the manufacturing method further includes:
  • a cover layer is formed, and the cover layer covers the optical coupler, the linear waveguide, the ring cavity, the polarization adjustment element, the photodetector, and the heater.
  • the method further includes:
  • An opening is formed in the cover layer, and the optical coupler is located below the opening.
  • the beneficial effect of the present application is that the use of the on-chip waveguide loss measurement device of the present application to measure the waveguide loss can effectively reduce the accuracy requirements for the alignment of the optical fiber and the chip, reduce the area of the waveguide loss measurement structure, and achieve efficient and rapid waveguide loss measurement.
  • FIG. 1 is a schematic diagram of the on-chip waveguide loss measurement device in embodiment 1 of the present application in the lateral direction;
  • FIG. 2 is a schematic diagram of the cross-section of the on-chip waveguide loss measuring device of Embodiment 1 of the present application in the longitudinal direction;
  • FIG. 3 is a schematic diagram of a method for calculating waveguide loss using the on-chip waveguide loss measuring device 100 of FIG. 1;
  • FIG. 4 is a schematic diagram of the current value of the photocurrent output by the photodetector 106 changing with the temperature of the ring cavity;
  • FIG. 5 is a schematic diagram of the manufacturing method of the on-chip waveguide loss measurement device of this embodiment.
  • the direction parallel to the surface of the substrate is referred to as “lateral”, and the direction perpendicular to the surface of the substrate is referred to as “longitudinal”. Thickness refers to the dimension of the part in the “longitudinal” direction.
  • the direction from the buried oxide layer of the substrate to the top silicon is called the “up” direction, and the opposite of the "up” direction is the “down” direction .
  • the embodiment of the present application provides an on-chip waveguide loss measurement device.
  • FIG. 1 is a schematic diagram of the on-chip waveguide loss measurement device of Embodiment 1 of the present application in the lateral direction
  • FIG. 2 is a schematic diagram of the cross-section of the on-chip waveguide loss measurement device of Embodiment 1 of the present application in the longitudinal direction.
  • the on-chip waveguide loss measurement device 1 includes: an optical coupler 102, a linear waveguide 103, a ring resonator 104, a polarization adjustment element 105, a photodetector 106 and a heater 107.
  • the optical coupler 102 is formed in the top silicon 101 of the silicon-on-insulator (SOI) substrate 100; the linear waveguide 103 and the ring cavity 104 are formed in the top silicon 101, and the light of the linear waveguide 103
  • the entrance end 1031 and the light exit end 1022 of the optical coupler 102 are laterally opposed, and the minimum distance between the ring resonator 104 and the linear waveguide 103 is the first distance r1 (shown in Fig. 1 and not shown in Fig.
  • the light in the linear waveguide 103 can be coupled into the ring cavity 104; the polarization adjusting element 105 is located on the side of the linear waveguide 103 close to the optical coupler 102, and the polarization adjusting element 105 adjusts the linear waveguide
  • the polarization state of the light in 103 for example, the polarization adjustment element 105 adjusts the polarization state of the light in the linear waveguide 103 to the TE polarization state or the TM polarization state;
  • the photodetector 106 is formed on the top silicon 101 for alignment
  • the light output by the waveguide 103 is detected and a current is generated; the heater 107 is formed at a predetermined distance from the ring cavity 104.
  • the on-chip waveguide loss measurement device 1 integrates a linear waveguide 103 and a ring resonator 104.
  • the light transmitted in the linear waveguide 103 can be coupled into the ring resonator 104, and the light wave whose wavelength meets the resonance condition resonates in the ring.
  • Resonance occurs in the cavity 104 and resides in the ring resonator 104.
  • the light waves that do not resonate are coupled back to the linear waveguide 103 and output from the light output end 1032 of the linear waveguide 103, and the photodetector 106
  • the optical signal output from the linear waveguide 103 is detected.
  • the heater 107 adjusts the temperature of the ring resonator 104, thereby adjusting the resonance frequency in the ring resonator 104.
  • the waveguide loss of the linear waveguide 103 in the top layer of silicon 101 is 100. Therefore, the use of the on-chip waveguide loss measurement device 100 of this embodiment can effectively reduce the accuracy requirements for the alignment of the optical fiber and the chip, reduce the area of the waveguide loss measurement structure, and achieve Efficient and fast waveguide loss measurement.
  • a silicon-on-insulator (SOI) substrate 100 may include: a substrate silicon layer 108, a buried oxide layer 109, and a top silicon 101.
  • the material of the substrate silicon 108 is single crystal silicon
  • the material of the top silicon 101 is single crystal silicon
  • the material of the buried oxide layer 109 is silicon dioxide.
  • the optical coupler 102 may have a light entrance end 1021 and a light exit end 1022.
  • the light incident end 1021 can receive the light incident on the optical coupler 102, and the light exit end 1022 can make the light incident on the optical coupler 102 emit light in the lateral direction.
  • the optical coupler 102 may be a grating coupler, that is, the light incident end 1021 may be a grating structure, and the grating structure is distributed along the lateral direction, so that the grating structure can receive the light entering the optical coupler along the longitudinal direction.
  • this embodiment may not be limited to this, and the optical coupler 102 may also be an end face coupler, that is, the light incident end 1021 may also be an end face coupling structure.
  • the light incident end 1031 of the linear waveguide 103 may be laterally opposed to the light output end 1021 of the optical coupler 102, so that the light emitted from the light output end 1021 of the optical coupler 102 in the lateral direction It can be incident on the linear waveguide 103.
  • the linear waveguide 103 is made of top layer silicon 101.
  • the radius of the ring resonant cavity 104 may be R.
  • the radius R and the first distance r1 can be set as required.
  • the photodetector 106 is formed on the top silicon 101, and the light emitted from the light emitting end 1032 of the linear waveguide 103 can enter the top silicon 101 opposite to the light emitting end 1032.
  • the top silicon 101 can introduce incident light into the photodetector 106, whereby the photodetector 106 can detect the light entering the top silicon 101 and output a current signal corresponding to the amount of incident light.
  • the photodetector 106 may be a germanium (Ge) detector or a germanium tin (GeSn) detector. In addition, this embodiment may not be limited to this, and the photodetector 106 may also be other types of photodetectors.
  • the heater 107 may be formed at a predetermined distance from the ring resonant cavity 104.
  • the heater 107 may be formed above the ring resonant cavity 104 or on the lateral side. Within the predetermined distance, when the heater 107 is energized and generates heat, the temperature of the ring resonant cavity 104 can change with the temperature of the heater 107.
  • the heater 107 may be made of polysilicon or amorphous silicon, for example, and when energized, the heater 107 generates heat.
  • the on-chip waveguide loss measuring device 1 further includes: a cover layer 110.
  • the cover layer 110 may cover the optical coupler 102, the linear waveguide 103, the ring cavity 104, the polarization adjustment element 105, the photodetector 106, and the heater 107.
  • the covering layer 110 can protect the covered structure.
  • the material of the cover layer 110 may be an insulating material, such as silicon dioxide.
  • the gap between the linear waveguide 103 and the ring cavity 104 may also be filled by the cover layer 110.
  • the cover layer 110 may have an opening 1101, and the optical coupler 102 may be located under the opening 1101.
  • the light incident end 1021 of the optical coupler 102 as a grating structure may be located below the opening 1101, so that light may enter the light incident end 1021 through the opening 1101.
  • FIG. 3 is a schematic diagram of a method for calculating waveguide loss using the on-chip waveguide loss measuring device 100 of FIG. 1. As shown in FIG. 3, the method includes:
  • Step 301 irradiate light to the optical coupler 102;
  • Step 302 Adjust the bias voltage of the heater 107, and measure the current value of the photocurrent output by the photodetector 106 under different bias voltages;
  • Step 303 Calculate the loss of the on-chip waveguide according to the current value of the photocurrent output by the photodetector 106.
  • step 301 light may be irradiated from the opening 1101 to the light incident end 1021 of the optical coupler 102 through an optical fiber.
  • step 202 the bias voltage of the heater 107 changes, which causes the temperature of the ring resonant cavity 104 to change, and the current value of the photocurrent output by the photodetector 106 changes periodically.
  • FIG. 4 is a schematic diagram of the temperature change of the current value of the photocurrent output by the photodetector 106 with strong ring resonance.
  • the horizontal axis is the temperature of the ring resonator 104 under different bias voltages of the heater 107
  • the vertical axis is the current value of the normalized photocurrent output by the photodetector 106
  • the unit of the horizontal axis and the vertical axis The unit of can be a custom unit (au).
  • the polarization adjustment element 105 adjusts the polarization state of the light in the linear waveguide 102 to the TE polarization state.
  • the bias voltage of the heater 107 increases, the temperature of the ring resonator 104 gradually increases, and the current value of the photocurrent output by the photodetector 106 periodically changes, where the current value is lower than The maximum value is 1, and the minimum value of the current value is t, where the minimum value t is related to the lowest normalized transmission coefficient T.
  • step 203 the loss of the linear waveguide can be calculated according to the following equations (1) and (2):
  • ⁇ is the width of the resonance spectrum in the ring cavity 104; ⁇ is the waveguide transmission loss, that is, the waveguide loss of the linear waveguide 103; ⁇ c is the coupling-related loss; v g is the group velocity; T is the lowest normalized transmission
  • T is the lowest normalized transmission
  • ⁇ can be calculated by the following equations (3) and (4):
  • FSR is the width of the free spectrum
  • ⁇ V ⁇ and ⁇ V FSR are shown in Figure 4, that is, ⁇ V FSR represents the temperature range corresponding to one cycle of the signal, and ⁇ V ⁇ represents the width on the horizontal axis when the signal intensity is half of the maximum value. , That is, the width at half maximum; c is the speed of light; n g is the group refractive index; R is the radius of the ring cavity 104.
  • the linear waveguide 103 and the ring resonator 104 are integrated in the on-chip waveguide loss measurement device 1.
  • the silicon on insulator (SOI) can be calculated.
  • the waveguide loss of the linear waveguide 103 in the top silicon 101 of the substrate 100. Therefore, the use of the on-chip waveguide loss measurement device 100 of this embodiment can effectively reduce the accuracy requirements for the alignment of the optical fiber and the chip, and reduce the area of the waveguide loss measurement structure , To achieve efficient and fast waveguide loss measurement.
  • Embodiment 2 provides a method for manufacturing an on-chip waveguide loss measurement device, which is used to manufacture the on-chip waveguide loss measurement device described in embodiment 1.
  • FIG. 5 is a schematic diagram of the manufacturing method of the on-chip waveguide loss measurement device of this embodiment. As shown in FIG. 5, in this embodiment, the manufacturing method may include:
  • Step 501 forming an optical coupler 102 in the top silicon 101 of the silicon-on-insulator (SOI) substrate 100;
  • Step 502 forming a linear waveguide cavity 103 and a ring resonant cavity 104 in the top layer of silicon 101, wherein the light incident end of the linear waveguide 103 and the light exit end of the optical coupler are laterally opposed, and the The minimum distance between the ring cavity 104 and the linear waveguide is the first distance;
  • Step 503 Form a polarization adjustment element 105 on the side of the linear waveguide close to the optical coupler;
  • Step 504 forming a photodetector 106 on the top silicon 101.
  • Step 505 forming a heater 107 at a predetermined distance from the ring cavity 104.
  • the manufacturing method further includes:
  • Step 506 forming a cover layer 110, which covers the optical coupler 102, the linear waveguide 103, the ring resonator 104, the polarization adjustment element 105, the photodetector 106 and the heater 107.
  • the heater 107 may be formed on the lateral side or above the ring resonant cavity 104.
  • steps 505 and 506 can be performed by the following Steps to achieve:
  • Step 601 After step 504, form a first covering layer covering the optical coupler 102, the linear waveguide 103, the ring cavity 104, the polarization adjustment element 105 and the photodetector 106;
  • Step 602 forming a heater 107 on the surface of the first covering layer
  • Step 603 forming a second covering layer, the second covering layer covering the heater 107 and the remaining first covering layer exposed from around the heater 107, wherein the first covering layer and the second covering layer together constitute the covering layer 110.
  • the manufacturing method further includes:
  • step 507 an opening 1101 is formed in the cover layer 110, and the optical coupler 102 is located under the opening 1101.
  • the linear waveguide 103 and the ring resonator 104 are integrated in the on-chip waveguide loss measurement device 1.
  • the silicon on insulator (SOI) can be calculated.
  • the waveguide loss of the linear waveguide 103 in the top silicon 101 of the substrate 100. Therefore, the use of the on-chip waveguide loss measurement device 100 of this embodiment can effectively reduce the accuracy requirements for the alignment of the optical fiber and the chip, and reduce the area of the waveguide loss measurement structure , To achieve efficient and fast waveguide loss measurement.

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  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optical Integrated Circuits (AREA)
  • Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
  • Light Receiving Elements (AREA)

Abstract

L'invention concerne un procédé et un dispositif de mesure de perte de guide d'onde sur puce (1) et un procédé de fabrication associé. Le dispositif de mesure de perte de guide d'ondes sur puce (1) comprend : un coupleur optique (102) formé dans le silicium supérieur (101) d'un substrat de silicium (SOI) (100) sur un isolant ; un guide d'ondes linéaire (103) formé dans le silicium supérieur (101) et s'étendant dans une direction linéaire, une extrémité d'incidence de lumière (1031) du guide d'ondes linéaire (103) étant disposée à l'opposé d'une extrémité d'émergence de lumière (1022) du coupleur optique (102) dans une direction transversale ; une cavité résonante annulaire (104) formée dans le silicium supérieur (101), la distance minimale entre la cavité résonante annulaire (104) et le guide d'ondes linéaire (103) étant une première distance (r1) ; un élément de réglage de polarisation (105) situé du côté, à proximité du coupleur optique (102) du guide d'ondes linéaire (103), l'élément de réglage de polarisation (105) réglant l'état de polarisation de la lumière dans le guide d'ondes linéaire (103) ; un détecteur photoélectrique (106), le détecteur photoélectrique étant formé sur le silicium supérieur (101), et détectant la lumière émise par une extrémité de sortie de lumière (1032) du guide d'ondes linéaire (103) et générant un courant ; et un dispositif de chauffage (107) formé à une distance prédéterminée de la cavité résonante annulaire (104).
PCT/CN2019/104252 2019-08-27 2019-09-03 Procédé et dispositif de mesure de perte de guide d'onde sur puce, et procédé de fabrication associé WO2021035779A1 (fr)

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CN201910797728.4A CN112444372A (zh) 2019-08-27 2019-08-27 一种片上波导损耗测量方法、测量装置及其制造方法
CN201910797728.4 2019-08-27

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Citations (8)

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Publication number Priority date Publication date Assignee Title
JPH01219534A (ja) * 1988-02-29 1989-09-01 Fujitsu Ltd 光導波路損失測定方法及び装置
CN1460869A (zh) * 2002-05-17 2003-12-10 日本电气株式会社 光波导设备及其制作方法
CN101216369A (zh) * 2008-01-21 2008-07-09 浙江大学 光波导环形谐振腔基本结构参数的测试装置及其方法
CN102269647A (zh) * 2011-05-10 2011-12-07 浙江大学 基于谐振腔技术测试保偏光纤耦合器偏振消光比的装置及方法
JP2014196915A (ja) * 2013-03-29 2014-10-16 住友大阪セメント株式会社 光損傷測定装置
CN107727365A (zh) * 2017-09-25 2018-02-23 中国科学院半导体研究所 一种利用反射谱精细度测量光波导损耗的系统
CN109387356A (zh) * 2018-08-31 2019-02-26 中国电子科技集团公司第五十五研究所 一种光波导传输损耗测量方法
CN210375634U (zh) * 2019-08-27 2020-04-21 上海新微技术研发中心有限公司 一种片上波导损耗测量装置

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01219534A (ja) * 1988-02-29 1989-09-01 Fujitsu Ltd 光導波路損失測定方法及び装置
CN1460869A (zh) * 2002-05-17 2003-12-10 日本电气株式会社 光波导设备及其制作方法
CN101216369A (zh) * 2008-01-21 2008-07-09 浙江大学 光波导环形谐振腔基本结构参数的测试装置及其方法
CN102269647A (zh) * 2011-05-10 2011-12-07 浙江大学 基于谐振腔技术测试保偏光纤耦合器偏振消光比的装置及方法
JP2014196915A (ja) * 2013-03-29 2014-10-16 住友大阪セメント株式会社 光損傷測定装置
CN107727365A (zh) * 2017-09-25 2018-02-23 中国科学院半导体研究所 一种利用反射谱精细度测量光波导损耗的系统
CN109387356A (zh) * 2018-08-31 2019-02-26 中国电子科技集团公司第五十五研究所 一种光波导传输损耗测量方法
CN210375634U (zh) * 2019-08-27 2020-04-21 上海新微技术研发中心有限公司 一种片上波导损耗测量装置

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