WO2021017369A1

WO2021017369A1 - Insulated gate bipolar transistor and manufacturing method therefor

Info

Publication number: WO2021017369A1
Application number: PCT/CN2019/124857
Authority: WO
Inventors: 刘利书; 冯宇翔
Original assignee: 广东美的白色家电技术创新中心有限公司; 美的集团股份有限公司
Priority date: 2019-07-26
Filing date: 2019-12-12
Publication date: 2021-02-04
Also published as: CN112310204A; CN112310204B

Abstract

Disclosed are an insulated gate bipolar transistor and a manufacturing method therefor. The insulated gate bipolar transistor comprises: a body region that is located between a drift region and an emitter region and in contact with the drift region, the emitter region, an emitter metal and a gate region; the emitter metal that is located above the body region and in contact with the emitter region; the emitter region located between the emitter metal and the gate region, wherein the width of a contact interface between the bottom of the emitter region and the body region is less than the width of the top of the emitter region; and the gate region that is located above the drift region and in contact with the emitter region.

Description

Insulated gate bipolar transistor and manufacturing method thereof

Cross references to related applications

This application is filed based on a Chinese patent application with application number 201910684437.4 and an application date of July 26, 2019, and claims the priority of the Chinese patent application. The entire content of the Chinese patent application is hereby incorporated into this application by reference.

Technical field

The embodiments of the present disclosure relate to the field of semiconductor technology but are not limited to the field of semiconductor technology, and in particular to an insulated gate bipolar transistor and a manufacturing method thereof.

Background technique

Insulated Gate Bipolar Transistor (IGBT) is a composite fully controlled voltage-driven power semiconductor device composed of a bipolar transistor (BJT) and an insulated gate field effect transistor (MOSFET), which also has a MOSFET The high input impedance of the device and the low turn-on voltage drop of the power transistor (giant transistor, GTR for short) have the advantages of low driving power and reduced saturation voltage, and are widely used in various fields.

The latch-up effect is one of the important reasons affecting the reliability of insulated gate bipolar transistors. The existing insulated gate bipolar transistor has poor latch-up resistance, which reduces the reliability of the insulated gate bipolar transistor.

Summary of the invention

The embodiments of the present disclosure provide an insulated gate bipolar transistor and a manufacturing method thereof.

The first aspect of the embodiments of the present disclosure provides an insulated gate bipolar transistor, including:

The body region is located between the drift region and the emitter region, and is in contact with the drift region, the emitter region, the emitter metal, and the gate region;

The emitter metal is located above the body region and is in contact with the emitter region;

The emitter region is located between the emitter metal and the gate region; wherein the width of the contact interface between the bottom of the emitter region and the body region is smaller than that of the top of the emitter region width;

The gate region is located above the drift region and is in contact with the emitter region.

In some embodiments, the doping concentration of the first type of carriers in the body region is greater than the doping concentration of the second type of carriers in the body region; wherein, the first type of carriers The charged type of is different from the charged type of the second type of carrier;

The gate region, in addition to forming an inversion channel under pressure to make the insulated gate bipolar transistor work normally, can also be configured to be in contact with the emitter metal when the insulated gate bipolar transistor is turned on. An electric field is formed between them to promote the movement of the first-type carriers in the body region to the emitter metal.

In some embodiments, the insulated gate bipolar transistor further includes: a collector region located below the drift region, the doping concentration of the collector region is greater than the doping concentration of the body region.

In some embodiments, the doping concentration of the first type of carrier in the collector region is greater than the doping concentration of the second type of carrier in the collector region; wherein the doping concentration of the first type of carrier The charging type is different from the charging type of the second type of carrier;

The doping concentration of the first type of carriers in the collector region is greater than the doping concentration of the second type of carriers in the drift region; wherein the second type of carriers in the drift region The doping concentration of carriers is greater than the doping concentration of the first type carriers in the drift region.

In some embodiments, the insulated gate bipolar transistor further includes a gate metal located above the gate region, and the gate metal forms an ohmic contact with the gate region.

In some embodiments, the width of the contact interface is greater than or equal to 0.5 μm.

A second aspect of the embodiments of the present disclosure provides a method for manufacturing an insulated gate bipolar transistor, including:

Forming a body region located between the drift region and the emitter region; wherein the body region is in contact with the drift region, the emitter region, the emitter metal, and the gate region;

Forming the emitter metal in contact with the emitter region above the body region;

The emitter region is formed between the emitter metal and the gate region; wherein the width of the contact interface between the bottom of the emitter region and the body region is smaller than that of the top of the emitter region width;

The gate region is formed above the drift region; wherein the gate region is in contact with the emitter region.

In some embodiments, the manufacturing method of the insulated gate bipolar transistor further includes: forming a collector region under the drift region; wherein the doping concentration of the collector region is greater than that of the body region. concentration.

In some embodiments, the doping concentration of the first type of carriers in the collector region is greater than the doping concentration of the second type of carriers in the drift region; wherein the charge type of the first type of carriers Different from the charging type of the second type of carrier;

The doping concentration of the first type of carriers in the collector region is greater than the doping concentration of the second type of carriers in the drift region; wherein the second type of carriers in the drift region The doping concentration of is greater than the doping concentration of the first type of carriers in the drift region.

In some embodiments, the manufacturing method of the insulated gate bipolar transistor further includes: forming a gate metal above the gate region; wherein the gate metal forms an ohmic contact with the gate region.

On the one hand, the above-mentioned insulated gate bipolar transistor and its manufacturing method provided by the embodiments of the present disclosure, by arranging the emitter metal, the emitter region and the gate region in parallel, the body region in contact with the gate region is arranged on the emitter Below the metal and the emitter region, the contact area between the body region and the emitter region is reduced, thereby reducing the contact resistance between the body region and the emitter region, and reducing the voltage drop of the PN junction formed by the body region and the emitter region. The probability of forward bias of the PN junction is reduced, and the latch-up resistance of the insulated gate bipolar transistor is improved.

On the other hand, in the insulated gate bipolar transistor and its manufacturing method provided by the embodiments of the present disclosure, by extending the emitter region and the gate region along the gate region to the drift region, the emitter metal and the gate region can be separated The transverse electric field formed between the body region acts on the body region, and the direction of the transverse electric field can accelerate the movement of the majority carriers in the body region to the emitter metal, and shorten the majority of the carriers in the body region between the body region and the emitter region. The staying time at the contact interface further reduces the probability of the PN junction being forward biased, and improves the latch-up resistance of the insulated gate bipolar transistor.

Description of the drawings

FIG. 1 is a schematic diagram of an insulated gate bipolar transistor provided by an embodiment of the disclosure;

2 is a schematic structural diagram of an insulated gate bipolar transistor provided by an embodiment of the disclosure;

3 is a schematic structural diagram of another insulated gate bipolar transistor provided by an embodiment of the disclosure;

FIG. 4 is a schematic structural diagram of another insulated gate bipolar transistor provided by an embodiment of the disclosure.

Detailed ways

The technical solutions of the present disclosure will be further described in detail below in conjunction with the drawings and specific embodiments of the specification. Although the drawings show exemplary implementation methods of the present disclosure, it should be understood that the present disclosure may be implemented in various forms and should not be limited by the embodiments set forth herein. On the contrary, these embodiments are provided to enable a more thorough understanding of the present disclosure and to fully convey the scope of the present disclosure to those skilled in the art.

In the following paragraphs, the present disclosure is described in more detail by way of example with reference to the drawings. According to the following description and claims, the advantages and features of the present disclosure will be clearer. It should be noted that the drawings all adopt a very simplified form and all use imprecise proportions, which are only used to conveniently and clearly assist in explaining the purpose of the embodiments of the present disclosure. Unless otherwise specified or pointed out, the terms "first", "second" and other descriptions in the embodiments of the present disclosure are only used to distinguish each component, element, step, etc. in the present disclosure, rather than to indicate each component or element , The logical relationship or sequence relationship between steps, etc.

If the embodiments of the present disclosure involve directional indications (such as up, down, left, right, front, back...), then the directional indications are only used to explain each in a certain posture (such as shown in the drawings). If the relative positional relationship between the components, the movement situation, etc., change the specific posture, the directional indication will change accordingly. In the embodiments of the present disclosure, the term "A is above/under B" means to include a situation where A and B are in contact with each other and one is above/under the other, or between A and B. A situation in which other components are interposed and one is located above/under the other without contact.

As shown in FIG. 1, an embodiment of the present disclosure provides an insulated gate bipolar transistor, including:

The body region 10 is located between the drift region 20 and the emitter region 30, and is in contact with the drift region 20, the emitter region 30, the emitter metal 40 and the gate region 50;

The emitter metal 40 is located above the body region 10 and is in contact with the emitter region 30;

The emitter region 30 is located between the emitter metal 40 and the gate region 50; wherein the width of the contact interface between the bottom of the emitter region 30 and the body region 10 is smaller than that of the The width of the top of the emitter region 30;

The gate region 50 is located above the drift region 20 and is in contact with the emitter region 30.

In some embodiments, by reducing the width of the contact interface between the bottom of the emitter region and the body region to a predetermined width threshold, the latch-up resistance performance of the insulated gate bipolar transistor can be further improved. Wherein, the preset width threshold may be 0.5 μm, 0.8 μm, 1 μm, etc.

In the embodiment of the present disclosure, the doping type of the emitter region 30 and the drift region 20 are the same, and the doping type may be acceptor doping or donor doping. The body region 10 is the same as the emitter doping. The doping type of the region 30 is different.

In the embodiment of the present disclosure, when the emitter region 30 and the drift region 20 are acceptor doped, the majority carriers in the emitter region 30 and the drift region 20 are holes, and the doping type of the body region 10 is donor doped. In addition, the majority carriers in the body region 10 are electrons; when the emitter region 30 and the drift region 20 are donor-doped, the majority carriers in the emitter region 30 and the drift region 20 are electrons, and the body region 10 is doped The type is acceptor doping, and the majority carriers in the body region 10 are holes. The majority carrier here is: a larger number of carriers per unit volume. In the embodiment of the present disclosure, the doping concentration is the concentration of carriers generated by doping.

In some embodiments, the doping concentration of the first type of carrier in the body region 10 is greater than the doping concentration of the second type of carrier in the body region 10; wherein, the first type of carrier The charge type of the current carrier is different from the charge type of the second type of carrier;

In the embodiment of the present disclosure, the charge type of the first type of carrier may be positively charged or negatively charged. When the first type of carriers are positively charged, the first type of carriers can be holes, and the second type of carriers can be electrons; when the first type of carriers are negatively charged, The first type of carriers may be electrons, and the second type of carriers may be holes.

In some embodiments, the shape of the emitter metal 40 may also be a trapezoidal structure as shown in FIG. 1, a triangular structure as shown in FIG. 2, a fan-shaped structure as shown in FIG. 3 or any other shape.

In some embodiments, the shape of the gate region 50 may also be a trapezoidal structure as shown in FIG. 1, a fan-shaped structure as shown in FIG. 3 or any other shape.

In the embodiment of the present disclosure, it is only necessary to ensure that the distance between the bottom of the gate region 50 and the bottom of the emitter metal 40 is as small as possible, and the width of the contact interface between the emitter region 30 and the body region 10 can be reduced to reduce the body region. The contact resistance with the emitter region reduces the voltage drop between the body region and the emitter region, thereby reducing the probability of the PN junction formed by the body region and the emitter region being positively biased.

In addition, by extending the emitter metal and the gate region along the gate region toward the drift region, the lateral electric field formed between the emitter metal and the gate region can be applied to the body region. The direction of the lateral electric field can accelerate the movement of the majority carriers in the body region to the emitter metal, shorten the time that the majority carriers in the body region stay at the contact interface between the body region and the emitter region, and reduce the body region The probability of the PN junction formed with the emitter region being forward biased improves the latch-up resistance of the insulated gate bipolar transistor.

In some embodiments, as shown in FIG. 1, the insulated gate bipolar transistor further includes a collector region 60 located below the drift region 20, and the doping concentration of the collector region 60 is greater than that of the body. Doping concentration of the zone.

Take the N-type insulated gate bipolar transistor device with the body region and the collector region as the acceptor doping (P-type doping) and the drift region and the emitter region as the donor doping (N-type doping) as an example. The structure of the bipolar transistor includes an N-type insulated gate field effect transistor, a PNP bipolar transistor T1 composed of body region-drift region-collector region, and parasitic NPN composed of emitter region-body region-drift region Bipolar transistor T2; among them, transistor T1 and transistor T2 form an NPNP four-layer three-junction thyristor structure. Therefore, when the current density in the insulated gate bipolar transistor is greater than the preset current density threshold, the thyristor is turned on, causing permanent damage to the insulated gate bipolar transistor.

When the insulated gate bipolar transistor is working normally, the thyristor will not turn on. This is because the short-circuit emitter structure formed by the emitter and the body under normal operating current ensures that the emitter junction of the transistor T2 does not turn on. The insulated gate bipolar transistor The current of the type transistor is controlled by the gate voltage and has saturation characteristics.

When the current density in the insulated gate bipolar transistor is greater than the preset current density threshold, an excessively high hole current flows through the body region under the emitter, and this current generates a voltage drop on the body region path resistance. When the voltage drop is greater than the preset voltage drop threshold, the PN junction formed by the body region and the emitter region is positively biased, and the upper NPN transistor T2 enters the amplifying region to work and drives the lower PNP transistor T1. After the PNP transistor T1 is turned on In turn, the upper NPN transistor T2 is driven to form a positive feedback. The regenerative feedback effect causes the gate of the insulated gate bipolar transistor to lose control of the current, so that the current in the insulated gate bipolar transistor increases rapidly. When the current is greater than the preset current threshold, the insulated gate bipolar transistor may be overheated and burned. Therefore, the latch-up phenomenon limits the maximum safe operating current of the insulated gate bipolar transistor.

Taking body region and collector region as donor doping (N-type doping), drift region and emitter region as acceptor doping (P-type doping) as an example, the structure of insulated gate bipolar transistor includes P-type Insulated gate field effect transistor, NPN bipolar transistor T3 composed of body region-drift region-collector region and parasitic PNP bipolar transistor T4 composed of emitter region-body region-drift region. Among them, the transistor T3 and the transistor T4 form a P-N-P-N four-layer three-junction thyristor structure. Therefore, when the current density in the insulated gate bipolar transistor is greater than the preset current density threshold, the thyristor is turned on, causing permanent damage to the insulated gate bipolar transistor.

When the insulated gate bipolar transistor is working normally, the thyristor will not turn on. This is because the short-circuit emitter structure formed by the emitter and the body under normal operating current ensures that the emitter junction of the transistor T4 does not turn on. The insulated gate bipolar transistor The current of the type transistor is controlled by the gate voltage and has saturation characteristics.

When the current density in the insulated gate bipolar transistor is greater than the preset current density threshold, an excessively high electron current flows through the body region under the emitter, and this current generates a voltage drop on the body region path resistance. When the voltage drop is greater than the preset voltage drop threshold, the PN junction formed by the body region and the emitter region is positively biased, and the upper PNP transistor T4 enters the amplification region to work, and drives the lower NPN transistor T3. After the NPN transistor T3 is turned on In turn, the upper PNP transistor T4 is driven to form a positive feedback. The regenerative feedback effect causes the gate of the insulated gate bipolar transistor to lose control of the current, so that the current in the insulated gate bipolar transistor increases rapidly. When the current is greater than the preset current threshold, the insulated gate bipolar transistor may be overheated and burned. Therefore, the latch-up phenomenon limits the maximum safe operating current of the insulated gate bipolar transistor.

In the embodiments of the present disclosure, by arranging the emitter metal, the emitter region, and the gate region in parallel, and the body region in contact with the gate region is arranged under the emitter metal and the emitter region, the emitter can be reduced. The width of the contact interface between the bottom of the region and the body region, thereby reducing the parasitic resistance of the body region, reducing the voltage drop of the current on the path resistance of the body region, and reducing the positive bias of the PN junction formed by the body region and the emitter region The probability of improving the latch-up resistance of insulated gate bipolar transistors.

In addition, the insulated gate bipolar transistor provided by the embodiments of the present disclosure can act on the lateral electric field formed between the emitter metal and the gate region by extending the emitter region and the gate region in the direction from the gate region to the drift region. In the body region, the direction of the transverse electric field can accelerate the movement of the majority carriers in the body region to the emitter metal, and shorten the time that the majority carriers in the body region stay at the contact interface between the body region and the emitter region , Further reduce the probability of forward bias of the PN junction formed by the emitter and the body region, and improve the latch-up resistance of the insulated gate bipolar transistor.

In some embodiments, the doping concentration of the first type carrier in the collector region 60 is greater than the doping concentration of the second type carrier in the collector region 60; wherein, the first type carrier The charging type of the carrier is different from the charging type of the second type of carrier;

The doping concentration of the first type of carrier in the collector region 60 is greater than the doping concentration of the second type of carrier in the drift region 20; wherein, the first type of carrier in the drift region 20 The doping concentration of the second type of carrier is greater than the doping concentration of the first type of carrier in the drift region 20.

In some embodiments, the insulated gate bipolar transistor further includes a gate metal 70 located above the gate region 50, and the gate metal 70 forms an ohmic contact with the gate region 50.

In the embodiments of the present disclosure, by forming an ohmic contact between the gate metal and the gate region, the contact resistance between the gate metal and the gate region can be reduced, and the gate metal and the gate region can be equipotential. Increase the controllability of grid voltage.

In some embodiments, the insulated gate bipolar transistor further includes: a collector metal 80 located under the collector region 60, and the collector metal 80 forms an ohmic contact with the collector region 60.

In the embodiments of the present disclosure, by forming an ohmic contact between the collector metal and the collector region, the contact resistance between the collector metal and the collector region can be reduced, the energy dissipation caused by the contact resistance can be reduced, and the insulation can be improved. The stability of gate bipolar transistors at high temperatures.

In the embodiment of the present disclosure, the width of the contact interface is greater than or equal to a preset width threshold, and the preset width threshold may be 0.5 μm, 0.6 μm, 0.8 μm, or the like. When the width of the contact interface is less than the preset width threshold, the probability of breakdown between the emitter metal and the gate layer under the action of an electric field increases, resulting in the failure of the insulated gate bipolar transistor and reducing the insulated gate bipolar transistor. Reliability of type transistors.

The embodiment of the present disclosure also provides a manufacturing method of an insulated gate bipolar transistor, including:

In the embodiments of the present disclosure, the gate region and the emitter metal with a special structure can be fabricated separately by thermal oxidation or thin film deposition.

In the embodiments of the present disclosure, the doped body region, emitter region, and drift region can be separately prepared by ion implantation.

In the embodiments of the present disclosure, the width of the contact interface between the bottom of the emitter region and the body region can be reduced by means of self-aligned ion implantation, thereby reducing the parasitic resistance of the body region and reducing the current in the body region. The voltage drop on the path resistance improves the latch-up resistance of the insulated gate bipolar transistor.

In addition, in the embodiments of the present disclosure, the emitter metal, the emitter region, and the gate region are formed in parallel, and the body region in contact with the gate region is arranged under the emitter metal and the emitter region. The transverse electric field formed between the polar regions acts on the body region. The direction of the transverse electric field can accelerate the movement of majority carriers in the body region to the emitter metal, shortening the majority of carriers in the body region at the contact interface. The staying time reduces the probability that the PN junction formed by the emitter and the body region will be positively biased, and further improves the latch-up resistance of the insulated gate bipolar transistor.

In some embodiments, the doping concentration of the first type of carriers in the collector region is greater than the doping concentration of the second type of carriers in the drift region; wherein the charge type of the first type of carriers Different from the charging type of the second type of carriers, the doping concentration of the first type of carriers in the collector region is greater than the doping concentration of the second type of carriers in the collector region, The doping concentration of the second type of carriers in the drift region is greater than the doping concentration of the first type of carriers in the drift region.

Example 1

Take the N-type insulated gate bipolar transistor device doped with the drift region as the donor as an example. The structure of the insulated gate bipolar transistor includes the N-type insulated gate field effect transistor, which is composed of body region-drift region-collector region PNP bipolar transistor T1 and a parasitic NPN bipolar transistor T2 composed of emitter region-body region-drift region. Among them, the transistor T1 and the transistor T2 form an N-P-N-P four-layer triple junction thyristor structure. Therefore, when the current density in the insulated gate bipolar transistor is greater than the preset current density threshold, the thyristor can be turned on, which can cause permanent damage to the insulated gate bipolar transistor.

The necessary condition for the latch-up of the insulated gate bipolar transistor is that the transistor T2 is turned on, that is, the PN junction formed by the body region of the insulated gate bipolar transistor and the emitter is forward biased. Since the N-emitter and P-body region of the cathode of the IGBT are at the same potential, the base-emitter forward bias of T2 can only appear when holes in the body region flow along the N-emitter to the cathode contact surface. Since there is a certain on-resistance in the P body region, such hole current will cause a certain voltage drop, thereby opening the base-emitter PN junction of T2, and finally forming a positive feedback with the PNP transistor T1, making the insulated gate bipolar Type transistor device is overheated and burned.

To suppress the latch-up effect of the parasitic thyristor, it is necessary to reduce the open base current gain of the upper T2 tube and the lower T1 tube, because the lower T1 tube with a wide base area needs to conduct the on-state current when the insulated gate bipolar transistor is working normally , Reducing its current gain will increase the on-voltage drop of the insulated gate bipolar transistor, and the upper T2 tube usually does not participate in the conduction of the on-state current of the insulated gate bipolar transistor. Therefore, it is best to reduce the current gain of the upper T2 tube. The current gain of the T2 tube can be reduced by increasing the doping concentration of the body region to prevent the latch-up effect. However, this method increases the threshold voltage of the insulated gate bipolar transistor and reduces the reverse withstand voltage performance.

As shown in FIG. 4, this example provides a schematic structural diagram of an insulated gate bipolar transistor. The insulated gate bipolar transistor includes a P-type body region 10, an N-type drift region 20, an N+ type emitter region 30, and an emitter metal 40. The gate region 50, the P+ type collector region 60, the gate metal 70, and the collector metal 80. Among them, a positive sign (+) indicates a higher doping concentration, a negative sign (-) indicates a lower doping concentration, E indicates an emitter section, G indicates a gate terminal, and C indicates a collector terminal. The contact surface between the gate region 50 and the N+ type emitter region 30, the P type body region 10, and the N- type drift region 20 is a thin insulating oxide layer (not labeled in FIG. 4).

In this example, the gate region 50 and the emitter metal 40 have a trapezoidal structure, and the distance between the bottom of the gate region and the bottom of the emitter metal is smaller than the distance between the top of the gate region and the top of the emitter metal. distance.

In some embodiments, the shape of the gate region and the emitter metal can also be a triangular structure, a sector structure or other arbitrary shapes. It is only necessary to ensure that the distance between the bottom of the gate region and the bottom of the emitter metal is as small as possible to reduce emission. The width of the contact interface between the pole region and the body region can reduce the contact resistance between the body region and the emitter region, reduce the voltage drop of the PN junction formed by the body region and the emitter region, and reduce the PN junction The probability of occurrence of forward bias improves the latch-up resistance of the insulated gate bipolar transistor.

The insulated gate bipolar transistor provided in this example also extends the emitter region and the gate region in the direction from the gate region to the drift region, so that the lateral electric field formed between the emitter metal and the gate region acts on the body region. The direction of the transverse electric field can accelerate the movement of the majority carriers in the body region to the emitter metal, shorten the time that the majority carriers in the body region stay at the contact interface between the body region and the emitter region, and further reduce the body region. The probability that the PN junction formed by the region and the emitter region is positively biased improves the latch-up resistance of the insulated gate bipolar transistor.

In some embodiments, the insulated gate bipolar transistor may be a conventional planar gate structure, a trench gate structure, a punch-through structure (PT structure), a field stop-trench structure (FS-Trench structure), etc.

In this example, the gate region and the emitter metal with a special structure can be fabricated separately by thermal oxidation or thin film deposition.

In this example, the body region and drift region can be doped by ion implantation.

In the several embodiments provided in the present disclosure, it should be understood that the disclosed device and method may be implemented in other ways. The device embodiments described above are merely illustrative. For example, the division of the units is only a logical function division, and there may be other divisions in actual implementation, such as: multiple units or components can be combined, or It can be integrated into another system, or some features can be ignored or not implemented. In addition, the coupling, or direct coupling, or communication connection between the components shown or discussed may be indirect coupling or communication connection through some interfaces, devices or units, and may be electrical, mechanical or other forms of.

The units described above as separate components may or may not be physically separate, and the components displayed as units may or may not be physical units, that is, they may be located in one place or distributed on multiple network units; Some or all of the units can be selected according to actual needs to achieve the purpose of the solution of the embodiment.

In addition, the functional units in the embodiments of the present disclosure can be all integrated into one processing module, or each unit can be individually used as a unit, or two or more units can be integrated into one unit; The unit can be implemented in the form of hardware, or in the form of hardware plus software functional units. A person of ordinary skill in the art can understand that all or part of the steps in the above method embodiments can be implemented by a program instructing relevant hardware. The foregoing program can be stored in a computer readable storage medium. When the program is executed, it is executed. Including the steps of the foregoing method embodiment; and the foregoing storage medium includes: removable storage devices, read-only memory (ROM, Read-Only Memory), random access memory (RAM, Random Access Memory), magnetic disks or optical disks, etc. A medium that can store program codes.

The methods disclosed in the several method embodiments provided in this application can be combined arbitrarily without conflict to obtain new method embodiments.

The features disclosed in the several product embodiments provided in this application can be combined arbitrarily without conflict to obtain new product embodiments.

The features disclosed in the several method or device embodiments provided in this application can be combined arbitrarily without conflict to obtain a new method embodiment or device embodiment.

The above are only specific implementations of the present disclosure, but the protection scope of the present disclosure is not limited thereto. Any person skilled in the art can easily think of changes or substitutions within the technical scope disclosed in the present disclosure. It should be covered within the protection scope of the present disclosure. Therefore, the protection scope of the present disclosure should be subject to the protection scope of the claims.

Claims

An insulated gate bipolar transistor including:

The body region is located between the drift region and the emitter region and is in contact with the drift region, the emitter region, the emitter metal and the gate region;

The emitter metal is located above the body region and is in contact with the emitter region;

The emitter region is located between the emitter metal and the gate region; wherein the width of the contact interface between the bottom of the emitter region and the body region is smaller than that of the top of the emitter region width;

The gate region is located above the drift region and is in contact with the emitter region.
The insulated gate bipolar transistor according to claim 1, wherein:

The doping concentration of the first type of carriers in the body region is greater than the doping concentration of the second type of carriers in the body region; wherein the charge type and the charge type of the first type of carriers The charge types of the second type of carriers are different;

The gate region, in addition to forming an inversion channel under pressure to make the insulated gate bipolar transistor work normally, can also be configured to be in contact with the emitter metal when the insulated gate bipolar transistor is turned on. An electric field is formed between them to promote the movement of the first-type carriers in the body region to the emitter metal.
The insulated gate bipolar transistor according to claim 1, further comprising:

The collector region is located below the drift region, and the doping concentration of the collector region is greater than the doping concentration of the body region.
The insulated gate bipolar transistor according to claim 3, wherein:

The doping concentration of the first type of carriers in the collector region is greater than the doping concentration of the second type of carriers in the collector region; wherein, the charging type of the first type of carriers and the The charge types of the two types of carriers are different;

The doping concentration of the first type of carriers in the collector region is greater than the doping concentration of the second type of carriers in the drift region; wherein the second type of carriers in the drift region The doping concentration of carriers is greater than the doping concentration of the first type carriers in the drift region.
The insulated gate bipolar transistor according to claim 1, further comprising:

Gate metal located above the gate region, and the gate metal forms an ohmic contact with the gate region;

The gate layer is separated from the emitter region, the body region, and the drift region by a thin insulating oxide layer.
The insulated gate bipolar transistor according to any one of claims 1 to 5, wherein:

The width of the contact interface is greater than or equal to 0.5 μm.
A method for manufacturing an insulated gate bipolar transistor includes:

Forming a body region located between the drift region and the emitter region; wherein the body region is in contact with the drift region, the emitter region, the emitter metal, and the gate region;

Forming the emitter metal in contact with the emitter region above the body region;

The emitter region is formed between the emitter metal and the gate region; wherein the width of the contact interface between the bottom of the emitter region and the body region is smaller than that of the top of the emitter region width;

The gate region is formed above the drift region; wherein the gate region is in contact with the emitter region.
The production method according to claim 7, further comprising:

A collector region is formed under the drift region; wherein the doping concentration of the collector region is greater than the doping concentration of the body region.
The manufacturing method according to claim 8, wherein:

The doping concentration of the first type of carriers in the collector region is greater than the doping concentration of the second type of carriers in the drift region; wherein the charging type of the first type of Different types of charge carriers;

The doping concentration of the first type of carriers in the collector region is greater than the doping concentration of the second type of carriers in the drift region; wherein, the second type of carriers in the drift region The doping concentration of is greater than the doping concentration of the first type of carriers in the drift region.
The production method according to claim 8, further comprising:

A gate metal is formed above the gate region; wherein, the gate metal forms an ohmic contact with the gate region.