WO2021017145A1 - Multi-quantum well structure, optoelectronic device epitaxial wafer and optoelectronic device - Google Patents

Multi-quantum well structure, optoelectronic device epitaxial wafer and optoelectronic device Download PDF

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WO2021017145A1
WO2021017145A1 PCT/CN2019/108691 CN2019108691W WO2021017145A1 WO 2021017145 A1 WO2021017145 A1 WO 2021017145A1 CN 2019108691 W CN2019108691 W CN 2019108691W WO 2021017145 A1 WO2021017145 A1 WO 2021017145A1
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quantum well
quantum
optoelectronic device
well structure
epitaxial wafer
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French (fr)
Chinese (zh)
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孙海定
龙世兵
刘明
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中国科学技术大学
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H01L33/24—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
    • H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
    • H01L33/325—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen characterised by the doping materials

Definitions

  • the present disclosure relates to the field of semiconductor technology, in particular, to a multiple quantum well structure, an optoelectronic device epitaxial wafer, and an optoelectronic device.
  • UVLED Ultraviolet Light Emitting Diode
  • InAlGaN or BAlGaN materials have the characteristics of forbidden band width and direct band gap.
  • InAlGaN Or BAlGaN-based UVLEDs have broad application prospects in the fields of sterilization, disinfection, medical treatment and non-line-of-sight optical communications.
  • AlGaN-based UVLEDs can achieve continuous adjustment of the emission wavelength in the range of 200nm-360nm, and can be mass-produced on cheap silicon, sapphire, gallium nitride, aluminum nitride and silicon carbide substrates through heteroepitaxial methods.
  • the present disclosure provides a multiple quantum well structure, optoelectronic device epitaxial wafer, and optoelectronic device to solve the above technical problems.
  • the present disclosure provides a multiple quantum well structure consisting of alternately grown quantum well layers and quantum barrier layers, wherein each of the quantum well layers and quantum barrier layers is an uneven structure.
  • the included angle between the quantum well layer and the quantum barrier layer and the horizontal plane perpendicular to the growth direction thereof is 1°-10°.
  • the quantum well layer is one of B x Al y Ga 1-xy N quantum well or In x Al y Ga 1-xy N quantum well, 0 ⁇ x ⁇ 1, 0 ⁇ y ⁇ 1,
  • the quantum barrier layer is one of B m Al n Ga 1-mn N quantum barrier or In m Al n Ga 1-mn N quantum barrier, 0 ⁇ m ⁇ 1, 0 ⁇ n ⁇ 1.
  • the B component, the Al component, and the Ga component are unevenly distributed, and the In x In Al y Ga 1-xy N quantum wells and In m Al n Ga 1-mn N quantum barriers, the In composition, Al composition and Ga composition are not uniformly distributed.
  • the uneven structure includes a wavy structure with the same thickness, an asymmetric triangular wavy line structure, and a structure with different thicknesses.
  • the present disclosure also provides an optoelectronic device epitaxial wafer, including the above-mentioned multiple quantum well structure.
  • the epitaxial wafer further includes a substrate, and one surface of the substrate is an inclined surface or a surface etched with a predetermined pattern, or the surface is a surface with a bevel angle of 1°-15° ,
  • the other structures of the epitaxial wafer and the multiple quantum well structure are sequentially grown on the surface.
  • the present disclosure also provides a photoelectric device, including the above-mentioned photoelectric device epitaxial wafer.
  • the photoelectric device is one of a light-emitting diode, a light-emitting laser, and a light-emitting detector.
  • the multiple quantum well structure, optoelectronic device epitaxial wafer and optoelectronic device provided by the present disclosure have the following beneficial effects:
  • the multi-quantum well structure is set as an AlGaN quantum well structure with uneven composition and uneven structure. Through the non-uniform division of Al and Ga components in the quantum well, the potential energy in the quantum well is uneven and enhanced. The localization effect of carriers is effectively restricted, and the movement of carriers in the quantum well is effectively restricted, and the confinement of carriers on a three-dimensional scale is realized;
  • FIG. 1 schematically shows a structure diagram of a multiple quantum well structure provided by an embodiment of the present disclosure
  • Figure 2A schematically shows a transmission electron microscope image of a multiple quantum well structure in an existing optoelectronic device
  • FIG. 2B schematically shows a transmission electron microscope image of a multiple quantum well structure provided by an embodiment of the present disclosure
  • FIG. 3 schematically shows a structural diagram of a light-emitting diode epitaxial wafer provided by an embodiment of the present disclosure.
  • FIG. 1 schematically shows a structural diagram of a multiple quantum well structure provided by an embodiment of the present disclosure.
  • Fig. 1 in conjunction with Figs. 2A and 2B, the multiple quantum well structure of the present disclosure will be described in detail.
  • the multiple quantum well structure is composed of alternately grown quantum well layers and quantum barrier layers, and each quantum well layer and quantum barrier layer is an uneven structure.
  • the uneven structure is, for example, a wave-shaped structure with the same thickness, or for example, another structure with a different thickness, or is, for example, an asymmetric triangular wave line structure.
  • the included angle between the quantum well layer and the quantum barrier layer of the uneven structure and the horizontal plane perpendicular to its growth direction is 1°-10°, and within the range of the included angle, the more the uneven structure is twisted That is, the greater the aforementioned angle, the higher the optical recombination efficiency, internal quantum efficiency, and luminous efficiency of the optoelectronic device formed based on the multiple quantum well structure.
  • the materials of the quantum well layer and quantum barrier layer in the multiple quantum well structure include, for example, aluminum (Al), gallium (Ga), and nitrogen (N), and may also include other elements such as boron (B) or indium (In), etc., quantum well
  • the layer is one of B x Al y Ga 1-xy N quantum well or In x Al y Ga 1-xy N quantum well, 0 ⁇ x ⁇ 1, 0 ⁇ y ⁇ 1, and the quantum barrier layer is B m Al n One of Ga 1-mn N quantum barrier or In m Al n Ga 1-mn N quantum barrier, 0 ⁇ m ⁇ 1, 0 ⁇ n ⁇ 1.
  • the multiple quantum well structure can be an alternating structure formed by B x Al y Ga 1-xy N quantum wells and B m Al n Ga 1-mn N quantum barriers, or it can be B x Al y Ga 1-xy N quantum wells and Alternate structure formed by In m Al n Ga 1-mn N quantum barrier, or alternate structure formed by In x Al y Ga 1-xy N quantum well and B m Al n Ga 1-mn N quantum barrier, or In x Al y Ga 1-xy N quantum wells and In m Al n Ga 1-mn N quantum barriers form an alternating structure.
  • the quantum well layer and the quantum barrier layer can be binary alloys, such as GaN or AlN; they can also be ternary alloys, such as AlGaN, BGaN, InGaN, BAlN, InAlN; It can also be a quaternary alloy, such as BAlGaN, InAlGaN.
  • the quantum well layer and the quantum barrier layer may be any combination of the aforementioned binary alloys, ternary alloys, and quaternary alloys.
  • the quantum well layer is a binary alloy GaN
  • the quantum barrier layer is a quaternary alloy InAlGaN, etc. .
  • the sum of the proportions of positive ions in the binary alloy, ternary alloy, and quaternary alloy is 100%.
  • the distribution of B, Al, and Ga components is not uniform, or In x Al y Ga 1-xy N In quantum wells and In m Al n Ga 1-mn N quantum barriers, the In composition, Al composition and Ga composition are not uniformly distributed, making the quantum barrier uneven.
  • Figure 2A shows a transmission electron microscope image of the multiple quantum well structure in an existing optoelectronic device, which can be clearly observed In the flat multiple quantum well structure, Al and Ga elements are uniformly distributed, and the thickness of the same quantum well layer and quantum barrier layer are kept consistent in the horizontal direction.
  • FIG. 2B shows a transmission electron microscope image of the multiple quantum well structure in the optoelectronic device of an embodiment of the present disclosure. It can be clearly observed that the uneven multiple quantum well structure has ripples and the structure is uneven. , The thickness of the same quantum well layer and quantum barrier layer is inconsistent in the horizontal direction.
  • This multi-quantum well structure with uneven composition and uneven structure can better realize the localization and confinement effects of carriers, thereby improving the optical recombination efficiency of carriers in quantum wells, and improving optoelectronic devices (such as ultraviolet light-emitting diodes, photodetectors, photoelectric lasers, etc.), and can achieve high-power photoelectric device preparation.
  • optoelectronic devices Such as ultraviolet light-emitting diodes, photodetectors, photoelectric lasers, etc.
  • the embodiment of the present disclosure also shows an optoelectronic device epitaxial wafer, including the multiple quantum well structure in the embodiment shown in FIG. 1.
  • the optoelectronic device epitaxial wafer also includes a substrate.
  • the substrate is a sapphire substrate, a silicon substrate, a metal substrate, silicon carbide, gallium nitride, aluminum nitride, etc.
  • the material of the substrate is not selected here. Do any restrictions.
  • One surface of the substrate is an inclined surface with a bevel angle, or a surface etched with a preset pattern, or a surface with a bevel angle of 1°-15° (the surface may not be a flat surface).
  • the photoelectric device epitaxial wafer as the light-emitting diode epitaxial wafer shown in Figure 3 as an example, which includes the substrate 1, the N-type conductive layer 2, the multiple quantum well layer 3, the P-type electron blocking layer 4, and the P-type from bottom to top.
  • the conductive layer 5 and the multiple quantum well 3 are the multiple quantum well structure provided by the embodiment of the disclosure.
  • the N-type conductive layer 2 is epitaxially grown on the substrate 1
  • the multiple quantum well layer 3 is epitaxially grown on the N-type conductive layer 2
  • the P-type electron blocking layer 4 is grown on the multiple quantum well layer 3
  • the P-type conductive layer 5 Grows on the P-type electron blocking layer 4.
  • the structures of the N-type conductive layer, the P-type electron blocking layer, and the P-type conductive layer of the existing light-emitting diode epitaxial wafer are all suitable for the N-type conductive layer 2, the P-type electron blocking layer 4, and the P-type conductive layer in the embodiments of the present disclosure.
  • the embodiments of the present disclosure also show an optoelectronic device, including the optoelectronic device epitaxial wafer in the above embodiments.
  • the optoelectronic device is, for example, one of a light-emitting diode, a light-emitting laser, and a light-emitting detector.
  • the optoelectronic device epitaxial wafers in the above embodiments can be applied to optoelectronic devices, for example, electrodes are prepared on the light emitting diode epitaxial wafer to package and form light emitting diode chips. Due to the uneven structure of the multi-quantum well layer in the optoelectronic device, it has high optical recombination efficiency, internal quantum efficiency, and external quantum efficiency, so that the formed optoelectronic device is a high-power optoelectronic device with high luminous efficiency.
  • An embodiment of the present disclosure shows a method for preparing an epitaxial wafer of an optoelectronic device, to prepare an epitaxial wafer including the multiple quantum well structure in the embodiment of the present disclosure, and still taking the preparation of a light-emitting diode epitaxial wafer as an example, it mainly includes the following operations:
  • a predetermined pattern is etched on a surface of the substrate 1 after cleaning, or the surface is etched into an inclined surface with a certain bevel angle, or the surface is polished to have a thickness of 1°-15° Bevel the surface.
  • the N-type conductive layer 2, the multiple quantum well layer 3, the P-type electron blocking layer 4 and the P-type conductive layer 5 can be sequentially prepared on the substrate 1 using molecular beam epitaxy or metal organic chemical deposition growth method, molecular beam epitaxy or The metal organic chemical deposition growth method has the advantages of easy growth control and large-scale growth.
  • the molecular beam epitaxy or metal organic chemical deposition growth method in the embodiments of the present disclosure is the same as the conventional molecular beam epitaxy or metal organic chemical deposition growth method, and will not be repeated here.
  • the multiple quantum well structure, optoelectronic device epitaxial wafer, and optoelectronic device of the present disclosure have been described in detail.
  • the multiple quantum well structure As a structure with uneven composition and uneven structure, and combining the uneven multiple quantum well structure It is applied to epitaxial wafers of optoelectronic devices and optoelectronic devices to improve the optical recombination efficiency and internal quantum efficiency of carriers in the epitaxial wafers, thereby achieving the preparation of high-power optoelectronic devices.

Abstract

A multi-quantum well structure, an optoelectronic device epitaxial wafer and an optoelectronic device. The multi-quantum well structure is composed of quantum well layers and quantum barrier layers that are alternatingly grown, and each quantum well layer and quantum barrier layer is an uneven structure. By means of arranging the quantum well layers and quantum barrier layers of the multi-quantum well structure as structures that have uneven components and rough configurations, the light combining efficiency, internal quantum efficiency, and light-emitting efficiency of a charge carrier is increased, and same is applied to optoelectronic device epitaxial wafers and optoelectronic devices to achieve the preparation of high-power light-emitting diodes, high-power light-emitting lasers and high-power light-emitting detector devices.

Description

一种多量子阱结构、光电器件外延片及光电器件Multi-quantum well structure, photoelectric device epitaxial wafer and photoelectric device 技术领域Technical field
本公开涉及半导体技术领域，具体地，涉及一种多量子阱结构、光电器件外延片及光电器件。The present disclosure relates to the field of semiconductor technology, in particular, to a multiple quantum well structure, an optoelectronic device epitaxial wafer, and an optoelectronic device.
背景技术Background technique
紫外发光二极管(Ultraviolet Light Emitting Diode，UVLED)多采用第三代半导体材料制成，铟铝镓氮(InAlGaN)或硼铝镓氮(BAlGaN)材料具有禁带宽度款、直接带隙等特点，InAlGaN或者BAlGaN基UVLED在杀菌、消毒、医疗和非视距光通信等领域具有广泛的应用前景。AlGaN基UVLED可以实现200nm-360nm范围内的发光波长连续可调，并且可以通过异质外延的方法在廉价的硅、蓝宝石、氮化镓，氮化铝和碳化硅衬底上实现大规模生产。Ultraviolet Light Emitting Diode (UVLED) is mostly made of third-generation semiconductor materials. InAlGaN or BAlGaN materials have the characteristics of forbidden band width and direct band gap. InAlGaN Or BAlGaN-based UVLEDs have broad application prospects in the fields of sterilization, disinfection, medical treatment and non-line-of-sight optical communications. AlGaN-based UVLEDs can achieve continuous adjustment of the emission wavelength in the range of 200nm-360nm, and can be mass-produced on cheap silicon, sapphire, gallium nitride, aluminum nitride and silicon carbide substrates through heteroepitaxial methods.
现有AlGaN基UVLED往往采用组分均匀、结构平整的多量子阱结构作为器件的有源区(即发光区或电子空穴复合区)，载流子在二维量子阱结构中的光子复合效率较低，从而导致器件的内量子效率、外量子效率及发光率偏低，发光二极管的电光转换效率较低。与发光二极管相同的是，其它光电器件如发光激光器、发光探测器都存在内量子效率、外量子效率、发光率以及电光转换效率低的问题。Existing AlGaN-based UVLEDs often use a multi-quantum well structure with uniform composition and flat structure as the active area of the device (ie, light-emitting area or electron-hole recombination area), and the photon recombination efficiency of carriers in the two-dimensional quantum well structure Low, resulting in low internal quantum efficiency, external quantum efficiency and luminous efficiency of the device, and low electro-optical conversion efficiency of light-emitting diodes. Similar to light-emitting diodes, other optoelectronic devices such as light-emitting lasers and light-emitting detectors have the problems of low internal quantum efficiency, external quantum efficiency, luminous efficiency, and electro-optical conversion efficiency.
发明内容Summary of the invention
(一)要解决的技术问题(1) Technical problems to be solved
本公开提供了一种多量子阱结构、光电器件外延片及光电器件，解决以上技术问题。The present disclosure provides a multiple quantum well structure, optoelectronic device epitaxial wafer, and optoelectronic device to solve the above technical problems.
(二)技术方案(2) Technical solution
本公开提供了一种多量子阱结构，由交替生长的量子阱层和量子垒 层组成，其中，每一所述量子阱层和量子垒层为不平整结构。The present disclosure provides a multiple quantum well structure consisting of alternately grown quantum well layers and quantum barrier layers, wherein each of the quantum well layers and quantum barrier layers is an uneven structure.
可选地，所述量子阱层和量子垒层与垂直于其生长方向的水平面之间的夹角为1°～10°。Optionally, the included angle between the quantum well layer and the quantum barrier layer and the horizontal plane perpendicular to the growth direction thereof is 1°-10°.
可选地，所述量子阱层为B xAl yGa 1-x-yN量子阱或In xAl yGa 1-x-yN量子阱中的一种，0≤x＜1，0≤y≤1，所述量子垒层为B mAl nGa 1-m-nN量子垒或In mAl nGa 1-m-nN量子垒中的一种，0≤m＜1，0≤n≤1。 Optionally, the quantum well layer is one of B x Al y Ga 1-xy N quantum well or In x Al y Ga 1-xy N quantum well, 0≤x<1, 0≤y≤1, The quantum barrier layer is one of B m Al n Ga 1-mn N quantum barrier or In m Al n Ga 1-mn N quantum barrier, 0≤m<1, 0≤n≤1.
可选地，所述B xAl yGa 1-x-yN量子阱和B mAl nGa 1-m-nN量子垒中，B组分、Al组分和Ga组分分布不均匀，所述In xAl yGa 1-x-yN量子阱和In mAl nGa 1-m-nN量子垒中，In组分、Al组分和Ga组分分布不均匀。 Optionally, in the B x Al y Ga 1-xy N quantum well and the B m Al n Ga 1-mn N quantum barrier, the B component, the Al component, and the Ga component are unevenly distributed, and the In x In Al y Ga 1-xy N quantum wells and In m Al n Ga 1-mn N quantum barriers, the In composition, Al composition and Ga composition are not uniformly distributed.
可选地，所述不平整结构包括厚度相同的波浪形结构、不对称的三角波浪线结构和厚度不相同的结构。Optionally, the uneven structure includes a wavy structure with the same thickness, an asymmetric triangular wavy line structure, and a structure with different thicknesses.
本公开还提供了一种光电器件外延片，包括上述多量子阱结构。The present disclosure also provides an optoelectronic device epitaxial wafer, including the above-mentioned multiple quantum well structure.
可选地，所述外延片还包括有衬底，所述衬底的一表面为倾斜表面或刻蚀有预设图形的表面，或者所述表面为具有1°～15°斜切角的表面，所述表面上依次生长有所述外延片的其它结构以及所述多量子阱结构。Optionally, the epitaxial wafer further includes a substrate, and one surface of the substrate is an inclined surface or a surface etched with a predetermined pattern, or the surface is a surface with a bevel angle of 1°-15° , The other structures of the epitaxial wafer and the multiple quantum well structure are sequentially grown on the surface.
本公开还提供了一种光电器件，包括上述光电器件外延片。The present disclosure also provides a photoelectric device, including the above-mentioned photoelectric device epitaxial wafer.
可选地，所述光电器件为发光二极管、发光激光器、发光探测器中的一种。Optionally, the photoelectric device is one of a light-emitting diode, a light-emitting laser, and a light-emitting detector.
(三)有益效果(3) Beneficial effects
本公开提供的多量子阱结构、光电器件外延片及光电器件，具有以下有益效果：The multiple quantum well structure, optoelectronic device epitaxial wafer and optoelectronic device provided by the present disclosure have the following beneficial effects:
(1)将多量子阱结构设置为组分不均匀、结构不平整的AlGaN量子阱结构，通过Al、Ga组分在量子阱中的非均一分部，造成量子阱内势能非均一化，增强了载流子的局域化效应，有效限制了载流子在量子阱中的移动，实现载流子在三维尺度上的束缚；(1) The multi-quantum well structure is set as an AlGaN quantum well structure with uneven composition and uneven structure. Through the non-uniform division of Al and Ga components in the quantum well, the potential energy in the quantum well is uneven and enhanced. The localization effect of carriers is effectively restricted, and the movement of carriers in the quantum well is effectively restricted, and the confinement of carriers on a three-dimensional scale is realized;
(2)提升了光电器件量子阱中的光复合效率，大幅提高了器件的内量子效率、外量子效率和光输出功率，实现了大功率发光二极管、大功率发光激光器、大功率发光探测器器件的制备。(2) Improve the optical recombination efficiency in the quantum well of optoelectronic devices, greatly improve the internal quantum efficiency, external quantum efficiency and optical output power of the device, and realize the integration of high-power light-emitting diodes, high-power light-emitting lasers, and high-power light-emitting detectors. preparation.
附图说明Description of the drawings
图1示意性示出了本公开实施例提供的多量子阱结构的结构示意图；FIG. 1 schematically shows a structure diagram of a multiple quantum well structure provided by an embodiment of the present disclosure;
图2A示意性示出了现有光电器件中多量子阱结构的透射电子显微镜图；Figure 2A schematically shows a transmission electron microscope image of a multiple quantum well structure in an existing optoelectronic device;
图2B示意性示出了本公开实施例提供的多量子阱结构的透射电子显微镜图；FIG. 2B schematically shows a transmission electron microscope image of a multiple quantum well structure provided by an embodiment of the present disclosure;
图3示意性示出了本公开实施例提供的发光二极管外延片的结构示意图。FIG. 3 schematically shows a structural diagram of a light-emitting diode epitaxial wafer provided by an embodiment of the present disclosure.
附图标记说明：Description of reference signs:
1-衬底；1- Substrate;
2-N型导电层；2-N type conductive layer;
3-多量子阱层；3-Multiple quantum well layer;
4-P型电子阻挡层；4-P type electron blocking layer;
5-P型导电层。5-P type conductive layer.
具体实施方式Detailed ways
为使本公开的目的、技术方案和优点更加清楚明白，以下结合具体实施例，并参照附图，对本公开进一步详细说明。In order to make the objectives, technical solutions, and advantages of the present disclosure clearer, the following further describes the present disclosure in detail with reference to specific embodiments and drawings.
图1示意性示出了本公开实施例提供的多量子阱结构的结构示意图。参阅图1，结合图2A和2B，对本公开多量子阱结构进行详细说明。FIG. 1 schematically shows a structural diagram of a multiple quantum well structure provided by an embodiment of the present disclosure. Referring to Fig. 1, in conjunction with Figs. 2A and 2B, the multiple quantum well structure of the present disclosure will be described in detail.
多量子阱结构由交替生长的量子阱层和量子垒层组成，每一量子阱层和量子垒层为不平整结构。该不平整结构例如为厚度相同的波浪形结构，或者例如为厚度不相同的其它结构，或者例如为不对称的三角波浪线结构。The multiple quantum well structure is composed of alternately grown quantum well layers and quantum barrier layers, and each quantum well layer and quantum barrier layer is an uneven structure. The uneven structure is, for example, a wave-shaped structure with the same thickness, or for example, another structure with a different thickness, or is, for example, an asymmetric triangular wave line structure.
优选地，该不平整结构的量子阱层和量子垒层与垂直于其生长方向的水平面之间的夹角为1°～10°，并且在该夹角范围内，不平整结构的波折越大，即上述夹角越大，基于该多量子阱结构形成的光电器件的光复合效率、内量子效率、发光效率越高。Preferably, the included angle between the quantum well layer and the quantum barrier layer of the uneven structure and the horizontal plane perpendicular to its growth direction is 1°-10°, and within the range of the included angle, the more the uneven structure is twisted That is, the greater the aforementioned angle, the higher the optical recombination efficiency, internal quantum efficiency, and luminous efficiency of the optoelectronic device formed based on the multiple quantum well structure.
多量子阱结构中量子阱层和量子垒层的材料例如包括铝(Al)、镓(Ga)和氮(N)，还可以包括其它元素如硼(B)或铟(In)等，量子阱层为B xAl yGa 1-x-yN量子阱或In xAl yGa 1-x-yN量子阱中的一种，0≤x＜1，0≤y≤1，量子垒层为B mAl nGa 1-m-nN量子垒或In mAl nGa 1-m-nN量子垒中的一种，0≤m＜1，0≤n≤1。多量子阱结构可以为B xAl yGa 1-x-yN量子阱和B mAl nGa 1-m-nN量子垒形成的交替结构，或者也可以为B xAl yGa 1-x-yN量子阱和In mAl nGa 1-m-nN量子垒形成的交替结构，或者为In xAl yGa 1-x-yN量子阱和B mAl nGa 1-m-nN量子垒形成的交替结构，或者为In xAl yGa 1-x-yN量子阱和In mAl nGa 1-m-nN量子垒形成的交替结构。 The materials of the quantum well layer and quantum barrier layer in the multiple quantum well structure include, for example, aluminum (Al), gallium (Ga), and nitrogen (N), and may also include other elements such as boron (B) or indium (In), etc., quantum well The layer is one of B x Al y Ga 1-xy N quantum well or In x Al y Ga 1-xy N quantum well, 0≤x<1, 0≤y≤1, and the quantum barrier layer is B m Al n One of Ga 1-mn N quantum barrier or In m Al n Ga 1-mn N quantum barrier, 0≤m<1, 0≤n≤1. The multiple quantum well structure can be an alternating structure formed by B x Al y Ga 1-xy N quantum wells and B m Al n Ga 1-mn N quantum barriers, or it can be B x Al y Ga 1-xy N quantum wells and Alternate structure formed by In m Al n Ga 1-mn N quantum barrier, or alternate structure formed by In x Al y Ga 1-xy N quantum well and B m Al n Ga 1-mn N quantum barrier, or In x Al y Ga 1-xy N quantum wells and In m Al n Ga 1-mn N quantum barriers form an alternating structure.
由x、y、m、n的取值范围可知，量子阱层和量子垒层可以为二元合金，如GaN或AlN；也可以为三元合金，如AlGaN、BGaN、InGaN、BAlN、InAlN；也可以为四元合金，如BAlGaN、InAlGaN。本公开实施例中，量子阱层和量子垒层可以是上述二元合金、三元合金、四元合金的任意组合，例如量子阱层为二元合金GaN，量子垒层为四元合金InAlGaN等。上述二元合金、三元合金、四元合金中正离子的比例之和为100％。From the value ranges of x, y, m, and n, it can be seen that the quantum well layer and the quantum barrier layer can be binary alloys, such as GaN or AlN; they can also be ternary alloys, such as AlGaN, BGaN, InGaN, BAlN, InAlN; It can also be a quaternary alloy, such as BAlGaN, InAlGaN. In the embodiments of the present disclosure, the quantum well layer and the quantum barrier layer may be any combination of the aforementioned binary alloys, ternary alloys, and quaternary alloys. For example, the quantum well layer is a binary alloy GaN, and the quantum barrier layer is a quaternary alloy InAlGaN, etc. . The sum of the proportions of positive ions in the binary alloy, ternary alloy, and quaternary alloy is 100%.
B xAl yGa 1-x-yN量子阱和B mAl nGa 1-m-nN量子垒中，B组分、Al组分和Ga组分分布不均匀，或者In xAl yGa 1-x-yN量子阱和In mAl nGa 1-m-nN量子垒中，In组分、Al组分和Ga组分分布不均匀，使得量子势垒不平整。 In B x Al y Ga 1-xy N quantum wells and B m Al n Ga 1-mn N quantum barriers, the distribution of B, Al, and Ga components is not uniform, or In x Al y Ga 1-xy N In quantum wells and In m Al n Ga 1-mn N quantum barriers, the In composition, Al composition and Ga composition are not uniformly distributed, making the quantum barrier uneven.
以多量子阱结构为AlGaN量子阱层和AlGaN量子垒层形成的交替结构为例，参阅图2A，图2A示出了现有光电器件中多量子阱结构的透射电子显微镜图，可以明显观察到平整的多量子阱结构中，Al、Ga元素分布均匀，其同一量子阱层和量子垒层的厚度在水平方向上保持一致。Taking the multiple quantum well structure as an alternate structure formed by an AlGaN quantum well layer and an AlGaN quantum barrier layer as an example, refer to Figure 2A. Figure 2A shows a transmission electron microscope image of the multiple quantum well structure in an existing optoelectronic device, which can be clearly observed In the flat multiple quantum well structure, Al and Ga elements are uniformly distributed, and the thickness of the same quantum well layer and quantum barrier layer are kept consistent in the horizontal direction.
参阅图2B，图2B示出了本公开实施例光电器件中多量子阱结构的透射电子显微镜图，可以明显观察到不平整的多量子阱结构中，该多量子阱结构具有波纹，结构不均匀，其同一量子阱层和量子垒层的厚度在水平方向上不一致。这种组分不均匀、结构不平整的多量子阱结构可以更好地实现载流子的局域化效应和束缚效应，从而提高量子阱中载流子的光复合效率，提升了光电器件(如紫外发光二极管、光电探测器、光 电激光器等)的内量子效率和发光效率，并可以实现大功率光电器件制备。Referring to FIG. 2B, FIG. 2B shows a transmission electron microscope image of the multiple quantum well structure in the optoelectronic device of an embodiment of the present disclosure. It can be clearly observed that the uneven multiple quantum well structure has ripples and the structure is uneven. , The thickness of the same quantum well layer and quantum barrier layer is inconsistent in the horizontal direction. This multi-quantum well structure with uneven composition and uneven structure can better realize the localization and confinement effects of carriers, thereby improving the optical recombination efficiency of carriers in quantum wells, and improving optoelectronic devices ( Such as ultraviolet light-emitting diodes, photodetectors, photoelectric lasers, etc.), and can achieve high-power photoelectric device preparation.
本公开实施例还示出了一种光电器件外延片，包括图1所示实施例中的多量子阱结构。The embodiment of the present disclosure also shows an optoelectronic device epitaxial wafer, including the multiple quantum well structure in the embodiment shown in FIG. 1.
本公开实施例中，该光电器件外延片还包括有衬底，衬底为蓝宝石衬底、硅衬底、金属衬底、碳化硅、氮化镓、氮化铝等，这里不对衬底的材料做任何限制。衬底的一表面为具有一斜切角度的倾斜表面，或者为刻蚀有预设图形的表面，或者为具有1°～15°斜切角的表面(该表面可以不为平整表面)，该表面上依次生长有光电器件外延片的其它结构，并且，在该倾斜衬底表面或刻蚀有预设图形的衬底表面或具有斜切角的表面上依次生长获得的多量子阱结构是不平整结构，本公开实施例中不对预设图形进行限制。In the embodiments of the present disclosure, the optoelectronic device epitaxial wafer also includes a substrate. The substrate is a sapphire substrate, a silicon substrate, a metal substrate, silicon carbide, gallium nitride, aluminum nitride, etc. The material of the substrate is not selected here. Do any restrictions. One surface of the substrate is an inclined surface with a bevel angle, or a surface etched with a preset pattern, or a surface with a bevel angle of 1°-15° (the surface may not be a flat surface). Other structures of epitaxial wafers of optoelectronic devices are sequentially grown on the surface, and the multiple quantum well structure obtained by sequentially growing on the inclined substrate surface or the substrate surface etched with a predetermined pattern or the surface with a bevel angle is not Flat structure, the preset graphics are not limited in the embodiment of the present disclosure.
可以理解的是，除了不平整的多量子阱结构之外，光电器件外延片的其它结构为现有结构，本公开实施例中不再赘述。It can be understood that, except for the uneven multi-quantum well structure, other structures of the optoelectronic device epitaxial wafer are existing structures, which will not be repeated in the embodiments of the present disclosure.
仅以光电器件外延片为图3所示发光二极管外延片为例，自下往上依次包括衬底1、N型导电层2、多量子阱层层3、P型电子阻挡层4和P型导电层5，多量子阱3为本公开实施例提供的多量子阱结构。其中，N型导电层2外延生长在衬底1上，多量子阱层3外延生长在N型导电层2上，P型电子阻挡层4生长在多量子阱层3上，P型导电层5生长在P型电子阻挡层4上。并且，现有发光二极管外延片的N型导电层、P型电子阻挡层以及P型导电层的结构均适用于本公开实施例中N型导电层2、P型电子阻挡层4以及P型导电层5的结构。Take the photoelectric device epitaxial wafer as the light-emitting diode epitaxial wafer shown in Figure 3 as an example, which includes the substrate 1, the N-type conductive layer 2, the multiple quantum well layer 3, the P-type electron blocking layer 4, and the P-type from bottom to top. The conductive layer 5 and the multiple quantum well 3 are the multiple quantum well structure provided by the embodiment of the disclosure. Among them, the N-type conductive layer 2 is epitaxially grown on the substrate 1, the multiple quantum well layer 3 is epitaxially grown on the N-type conductive layer 2, the P-type electron blocking layer 4 is grown on the multiple quantum well layer 3, and the P-type conductive layer 5 Grows on the P-type electron blocking layer 4. Moreover, the structures of the N-type conductive layer, the P-type electron blocking layer, and the P-type conductive layer of the existing light-emitting diode epitaxial wafer are all suitable for the N-type conductive layer 2, the P-type electron blocking layer 4, and the P-type conductive layer in the embodiments of the present disclosure. Layer 5 structure.
本公开实施例还示出了一种光电器件，包括上述实施例中的光电器件外延片。The embodiments of the present disclosure also show an optoelectronic device, including the optoelectronic device epitaxial wafer in the above embodiments.
本公开实施例中，光电器件例如为发光二极管、发光激光器、发光探测器中的一种。可以将上述实施例中的光电器件外延片应用在光电器件中，例如在发光二极管外延片上制备电极，以封装形成发光二极管芯片等。由于光电器件中不平整结构的多量子阱层，具有较高的光复合效率、内量子效率、外量子效率，从而使得形成的光电器件为大功率光电 器件，且具有较高的发光效率。In the embodiments of the present disclosure, the optoelectronic device is, for example, one of a light-emitting diode, a light-emitting laser, and a light-emitting detector. The optoelectronic device epitaxial wafers in the above embodiments can be applied to optoelectronic devices, for example, electrodes are prepared on the light emitting diode epitaxial wafer to package and form light emitting diode chips. Due to the uneven structure of the multi-quantum well layer in the optoelectronic device, it has high optical recombination efficiency, internal quantum efficiency, and external quantum efficiency, so that the formed optoelectronic device is a high-power optoelectronic device with high luminous efficiency.
本公开一实施例示出了一种光电器件外延片的制备方法，以制备包含有本公开实施例中的多量子阱结构的外延片，仍以制备发光二极管外延片为例，主要包括以下操作：An embodiment of the present disclosure shows a method for preparing an epitaxial wafer of an optoelectronic device, to prepare an epitaxial wafer including the multiple quantum well structure in the embodiment of the present disclosure, and still taking the preparation of a light-emitting diode epitaxial wafer as an example, it mainly includes the following operations:
S1，在衬底1上制备N型导电层2。S1, preparing an N-type conductive layer 2 on the substrate 1.
S2，在N型导电层2上制备多量子阱层3，多量子阱层3为图1所示实施例中的多量子阱结构。S2, preparing a multiple quantum well layer 3 on the N-type conductive layer 2, and the multiple quantum well layer 3 is the multiple quantum well structure in the embodiment shown in FIG. 1.
S3，在多量子阱层3上制备P型电子阻挡层4。S3, preparing a P-type electron blocking layer 4 on the multiple quantum well layer 3.
S4，在P型电子阻挡层4上制备P型导电层5。S4, preparing a P-type conductive layer 5 on the P-type electron blocking layer 4.
本公开实施例中，将清洗后的衬底1的一表面上刻蚀预设图形，或者将该表面刻蚀为具有一定斜切角度的倾斜表面，或者将表面抛光成具有1°～15°斜切角的表面。然后可以利用分子束外延或金属有机化学沉积生长法在衬底1上依次制备N型导电层2、多量子阱层层3、P型电子阻挡层4和P型导电层5，分子束外延或金属有机化学沉积生长法具有生长易于控制、可大规模生长等优点。本公开实施例中的分子束外延或金属有机化学沉积生长法与常规的分子束外延或金属有机化学沉积生长法相同，此处不再赘述。In the embodiment of the present disclosure, a predetermined pattern is etched on a surface of the substrate 1 after cleaning, or the surface is etched into an inclined surface with a certain bevel angle, or the surface is polished to have a thickness of 1°-15° Bevel the surface. Then, the N-type conductive layer 2, the multiple quantum well layer 3, the P-type electron blocking layer 4 and the P-type conductive layer 5 can be sequentially prepared on the substrate 1 using molecular beam epitaxy or metal organic chemical deposition growth method, molecular beam epitaxy or The metal organic chemical deposition growth method has the advantages of easy growth control and large-scale growth. The molecular beam epitaxy or metal organic chemical deposition growth method in the embodiments of the present disclosure is the same as the conventional molecular beam epitaxy or metal organic chemical deposition growth method, and will not be repeated here.
至此，已对本公开多量子阱结构、光电器件外延片、光电器件进行了详细说明，通过将多量子阱结构设置为组分不均匀、结构不平整的结构，并将不平整的多量子阱结构应用于光电器件外延片及光电器件中，提高了外延片中载流子的光复合效率、内量子效率等，从而实现大功率光电器件的制备。So far, the multiple quantum well structure, optoelectronic device epitaxial wafer, and optoelectronic device of the present disclosure have been described in detail. By setting the multiple quantum well structure as a structure with uneven composition and uneven structure, and combining the uneven multiple quantum well structure It is applied to epitaxial wafers of optoelectronic devices and optoelectronic devices to improve the optical recombination efficiency and internal quantum efficiency of carriers in the epitaxial wafers, thereby achieving the preparation of high-power optoelectronic devices.
以上所述的具体实施例，对本发明的目的、技术方案和有益效果进行了进一步详细说明，所应理解的是，以上所述仅为本发明的具体实施例而已，并不用于限制本发明，凡在本发明的精神和原则之内，所做的任何修改、等同替换、改进等，均应包含在本发明的保护范围之内。The specific embodiments described above further describe the purpose, technical solutions and beneficial effects of the present invention in further detail. It should be understood that the above descriptions are only specific embodiments of the present invention and are not intended to limit the present invention. Any modification, equivalent replacement, improvement, etc., made within the spirit and principle of the present invention shall be included in the protection scope of the present invention.

Claims (9)

  1. 一种多量子阱结构，由交替生长的量子阱层和量子垒层组成，其中，每一所述量子阱层和量子垒层为不平整结构。A multi-quantum well structure is composed of alternately grown quantum well layers and quantum barrier layers, wherein each of the quantum well layers and quantum barrier layers is an uneven structure.
  2. 根据权利要求1所述的多量子阱结构，其中，所述量子阱层和量子垒层与垂直于其生长方向的水平面之间的夹角为1°～10°。The multiple quantum well structure according to claim 1, wherein the angle between the quantum well layer and the quantum barrier layer and the horizontal plane perpendicular to the growth direction thereof is 1°-10°.
  3. 根据权利要求1所述的多量子阱结构，其中，所述量子阱层为B xAl yGa 1-x-yN量子阱或In xAl yGa 1-x-yN量子阱中的一种，0≤x＜1，0≤y≤1，所述量子垒层为B mAl nGa 1-m-nN量子垒或In mAl nGa 1-m-nN量子垒中的一种，0≤m＜1，0≤n≤1。 The multiple quantum well structure according to claim 1, wherein the quantum well layer is one of B x Al y Ga 1-xy N quantum well or In x Al y Ga 1-xy N quantum well, 0≤ x<1, 0≤y≤1, the quantum barrier layer is one of B m Al n Ga 1-mn N quantum barrier or In m Al n Ga 1-mn N quantum barrier, 0≤m<1, 0≤n≤1.
  4. 根据权利要求3所述的多量子阱结构，其中，所述B xAl yGa 1-x-yN量子阱和B mAl nGa 1-m-nN量子垒中，B组分、Al组分和Ga组分分布不均匀，所述In xAl yGa 1-x-yN量子阱和In mAl nGa 1-m-nN量子垒中，In组分、Al组分和Ga组分分布不均匀。 The multiple quantum well structure according to claim 3, wherein, in the B x Al y Ga 1-xy N quantum well and the B m Al n Ga 1-mn N quantum barrier, the B component, the Al component and the Ga The composition distribution is uneven. In the In x Al y Ga 1-xy N quantum well and the In m Al n Ga 1-mn N quantum barrier, the In composition, Al composition, and Ga composition are unevenly distributed.
  5. 根据权利要求1所述的多量子阱结构，其中，所述不平整结构包括厚度相同的波浪形结构、不对称的三角波浪线结构和厚度不相同的结构。The multiple quantum well structure according to claim 1, wherein the uneven structure comprises a wave-shaped structure with the same thickness, an asymmetric triangular wave line structure and a structure with different thicknesses.
  6. 一种光电器件外延片，包括如权利要求1至5任一项所述的多量子阱结构。An epitaxial wafer for optoelectronic devices, comprising the multiple quantum well structure according to any one of claims 1 to 5.
  7. 根据权利要求6所述的光电器件外延片，其中，还包括有衬底，所述衬底的一表面为倾斜表面或刻蚀有预设图形的表面，或者所述表面为具有1°～15°斜切角的表面，所述表面上依次生长有所述外延片的其它结构以及所述多量子阱结构。The optoelectronic device epitaxial wafer according to claim 6, further comprising a substrate, one surface of the substrate is an inclined surface or a surface etched with a predetermined pattern, or the surface has a thickness of 1° to 15° °Chamfered surface on which other structures of the epitaxial wafer and the multiple quantum well structure are sequentially grown.
  8. 一种光电器件，包括如权利要求6至7任一项所述的光电器件外延片。An optoelectronic device, comprising the optoelectronic device epitaxial wafer according to any one of claims 6 to 7.
  9. 根据权利要求8所述的光电器件，其中，所述光电器件为发光二极管、发光激光器、发光探测器中的一种。8. The optoelectronic device according to claim 8, wherein the optoelectronic device is one of a light emitting diode, a light emitting laser, and a light emitting detector.
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