WO2020258640A1 - 基于雪崩三极管的微细电火花加工用纳秒脉冲电源 - Google Patents

基于雪崩三极管的微细电火花加工用纳秒脉冲电源 Download PDF

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WO2020258640A1
WO2020258640A1 PCT/CN2019/115752 CN2019115752W WO2020258640A1 WO 2020258640 A1 WO2020258640 A1 WO 2020258640A1 CN 2019115752 W CN2019115752 W CN 2019115752W WO 2020258640 A1 WO2020258640 A1 WO 2020258640A1
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avalanche
power supply
circuit
limiting resistor
pulse
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English (en)
French (fr)
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佟浩
权冉
孔全存
李勇
李俊杰
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Tsinghua University
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Tsinghua University
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23H—WORKING OF METAL BY THE ACTION OF A HIGH CONCENTRATION OF ELECTRIC CURRENT ON A WORKPIECE USING AN ELECTRODE WHICH TAKES THE PLACE OF A TOOL; SUCH WORKING COMBINED WITH OTHER FORMS OF WORKING OF METAL
    • B23H1/00—Electrical discharge machining, i.e. removing metal with a series of rapidly recurring electrical discharges between an electrode and a workpiece in the presence of a fluid dielectric
    • B23H1/02—Electric circuits specially adapted therefor, e.g. power supply, control, preventing short circuits or other abnormal discharges
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/335—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of semiconductor devices with more than two electrodes and exhibiting avalanche effect

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  • This application belongs to the technical field of micro-special processing, and particularly relates to a nanosecond pulse power supply for micro-EDM processing based on an avalanche transistor.
  • the pulse power supply has an important influence on many aspects such as micro EDM machining efficiency, machining accuracy, machining process stability, and tool electrode wear. Under normal circumstances, the use of narrow pulse width discharge pulse power supply in EDM can obtain better processing quality and higher processing efficiency. In addition, the narrow pulse width discharge erosion has a higher ratio of vaporization erosion, which is beneficial to obtain a thinner recast layer, thereby reducing or even avoiding microcracks and surface damage of the heat-affected layer. Therefore, the narrow pulse width pulse power supply is one of the effective technical ways to improve the effect of the EDM process.
  • the pulse power with narrow pulse width to nanosecond level is an important research and development direction.
  • a nanometer-level narrow pulse width pulse power supply with a smaller single pulse discharge energy is the prerequisite for process research and equipment development.
  • the current nanosecond narrow pulse width pulse power supply is still difficult to achieve.
  • the circuit structure of the existing pulse power supply for EDM is mainly divided into two types: the independent type of the electron tube or transistor and the RC relaxation type. It is difficult to obtain a pulse with a sufficiently narrow pulse width from a tube or transistor independent pulse power supply, while the conventional RC relaxation pulse power supply has a slow discharge frequency, and it is difficult for these two circuits to obtain a stable and controllable single pulse discharge.
  • the conventional RC relaxation pulse power supply has a slow discharge frequency, and it is difficult for these two circuits to obtain a stable and controllable single pulse discharge.
  • power tubes with high switching frequencies are often used in the prior art. However, limited by the manufacturing process and switching frequency of the power tube, the cost of the circuit is high, and it is difficult to obtain a sufficiently narrow pulse width.
  • pulse power supplies for ultra-narrow pulse width EDM for example, pulse width ⁇ 25ns
  • pulse width ⁇ 25ns there is currently a lack of a pulse power supply with adjustable voltage, high discharge frequency, good stability, and a pulse width of nanoseconds.
  • This application aims to solve one of the technical problems in the related technology at least to a certain extent.
  • the purpose of this application is to propose a nanosecond pulse power supply for micro-EDM based on an avalanche transistor, which uses an avalanche transistor as a switching element, has a fast opening speed and a high switching frequency, and can obtain nanosecond pulse width pulses. , Can effectively improve the quality and efficiency of micro-EDM machining.
  • the embodiment of the present application proposes a nanosecond pulse power supply for micro-EDM based on an avalanche triode, which includes a DC power supply, a charging circuit, a discharging circuit, a driving pulse input circuit and a sharpening waveform circuit.
  • the charging circuit includes: a first current limiting resistor R1 and a diode D1;
  • the discharge circuit includes: an energy storage capacitor C1, a first avalanche transistor T1, and a control resistor R2;
  • the driving pulse circuit includes: a second current limiting resistor R3 and a third current limiting resistor R4;
  • the sharpening waveform circuit includes: a second avalanche transistor T2;
  • one end of the first current limiting resistor R1 is connected to the DC power source, and the other end is respectively connected to the energy storage capacitor C1 and the collector of the first avalanche transistor T1;
  • the anode of the diode D1 is connected to the energy storage capacitor C1, the emitter of the second avalanche diode T2 and the control resistor R2, and the cathode is connected to the DC power supply, the third current limiting resistor R4, The second current limiting resistor R3, the emitter of the first avalanche transistor T1 and the collector of the second avalanche diode T2 are connected;
  • One end of the energy storage capacitor C1 is connected to the first current limiting resistor R1 and the collector of the first avalanche transistor T1, and the other end is connected to the anode of the diode D1 and the emitter of the second avalanche diode T2.
  • the pole is connected to the control resistor R2;
  • the base of the first avalanche transistor T1 is connected to the second current limiting resistor R3 and the third current limiting resistor R4, and the collector is connected to the first current limiting resistor R1 and the energy storage capacitor C1, respectively.
  • the emitter is respectively connected to the DC power supply, the third current-limiting resistor R4, the second current-limiting resistor R3, the cathode of the diode D1 and the collector of the second avalanche diode T2;
  • control resistor R2 One end of the control resistor R2 is connected to the energy storage capacitor C1, the anode of the diode D1 and the emitter of the second avalanche diode T2, and the other end is connected to the base of the second avalanche diode T2;
  • One end of the second current-limiting resistor R3 is respectively connected to the third current-limiting resistor R4 and the base of the first avalanche transistor T1, and the other end is respectively connected to the DC power supply, the third current-limiting resistor R4, and the base of the first avalanche transistor T1.
  • the emitter of the first avalanche transistor T1, the cathode of the diode D1 and the collector of the second avalanche diode T2 are connected;
  • One end of the third current-limiting resistor R4 is respectively connected to the second current-limiting resistor R3 and the base of the first avalanche transistor T1, and the other end is respectively connected to the DC power supply, the second current-limiting resistor R3, and the base of the first avalanche transistor T1.
  • the emitter of the first avalanche transistor T1, the cathode of the diode D1 and the collector of the second avalanche diode T2 are connected;
  • the base of the second avalanche transistor T2 is connected to the control resistor R2, the emitter is connected to the energy storage capacitor C1, the anode of the diode D1 and the control resistor R2, and the collector is connected to the DC
  • the power supply, the third current limiting resistor R4, the second current limiting resistor R3, the emitter of the first avalanche transistor T1, and the cathode of the diode D1 are connected.
  • the nanosecond pulse power supply for micro-EDM based on avalanche triodes according to the embodiments of this application, the nanosecond pulse power supply for micro-EDM based on avalanche triodes proposed in the embodiments of this application, and the charging circuit performs energy storage capacitors in the circuit.
  • the charging and discharging circuit uses the energy in the storage capacitor to discharge to generate pulses
  • the driving pulse input circuit provides a driving signal for the discharging circuit
  • the sharpening waveform circuit serves to sharpen the falling edge of the pulse.
  • the avalanche transistor is used as the switching element, which has fast opening speed and high switching frequency, and can obtain nanosecond pulse width pulses, which can effectively improve the quality and efficiency of micro-EDM machining.
  • the power supply can generate single or continuous nanosecond pulses according to the type of driving pulse signal.
  • a single pulse can be used for the research of micro-EDM principles, and continuous pulses can be practically applied to micro-EDM technology and equipment.
  • the nanosecond pulse power supply has a small and compact structure, and is easy to integrate into micro-EDM equipment, with low cost and high stability.
  • nanosecond pulse power supply for micro-EDM based on avalanche transistors may also have the following additional technical features:
  • the charging circuit charges the energy storage capacitor C1 through the DC power supply.
  • the on-off of the first avalanche transistor T1 in the discharge circuit is controlled by controlling the pulse signal input by the driving pulse input circuit.
  • the driving pulse input circuit inputs a positive pulse signal
  • the first avalanche transistor T1 in the discharge circuit is turned on, and a voltage is generated between the output terminals of the discharge circuit and With a pulse rising edge
  • the control resistor R2 when the discharge circuit discharges and current flows, the control resistor R2 generates a voltage difference to turn on the second avalanche diode T2 in the sharpening waveform circuit, and the discharge circuit outputs The terminal is short-circuited to obtain the falling edge of the pulse and the narrow pulse width.
  • a single or continuous multiple nanosecond discharge pulses are generated according to the type of input pulses of the driving pulse input circuit.
  • the peak voltage of the nanosecond discharge pulse is adjusted by adjusting the DC power supply.
  • the sharpening waveform circuit is feedback controlled by the discharge circuit, and discharges between the tool electrode and the workpiece between the base and collector of the second avalanche transistor T2. After breakdown, the sharpening waveform circuit short-circuits the tool electrode and the workpiece to sharpen the falling edge of the nanosecond discharge pulse.
  • the DC power supply is connected to the input terminal of the charging circuit
  • the driving pulse signal is connected to the input terminal of the driving pulse input circuit
  • the tool electrode and the workpiece are connected to the input terminal of the charging circuit.
  • Fig. 1 is a circuit diagram of a nanosecond pulse power supply for micro-EDM processing based on an avalanche transistor according to an embodiment of the present application;
  • FIG. 2 is a schematic diagram of a nanosecond pulse power supply for micro-EDM processing based on an avalanche triode according to an embodiment of the present application;
  • FIG. 3 is a physical diagram of a nanosecond pulse power supply for micro-EDM machining based on an avalanche triode according to an embodiment of the present application;
  • FIG. 4 is an operation flowchart of a nanosecond pulse power supply for micro-EDM based on an avalanche transistor according to an embodiment of the present application
  • Fig. 5 is a schematic diagram of a discharge waveform of a nanosecond pulse power supply for micro-EDM based on an avalanche triode according to an embodiment of the present application.
  • Fig. 1 is a circuit diagram of a nanosecond pulse power supply for micro-EDM processing based on an avalanche transistor according to an embodiment of the present application.
  • the nanosecond pulse power supply for micro-EDM based on avalanche triode includes the following steps: DC power supply, charging circuit, discharging circuit, driving pulse input circuit and sharpening waveform circuit.
  • the charging circuit includes: a first current-limiting resistor R1 and a diode D1.
  • the discharge circuit includes an energy storage capacitor C1, a first avalanche transistor T1, and a control resistor R2.
  • the driving pulse circuit includes: a second current-limiting resistor R3 and a third current-limiting resistor R4.
  • the sharpening waveform circuit includes: a second avalanche transistor T2.
  • the charging circuit charges the energy storage capacitor in the circuit through a DC power supply.
  • the discharge circuit uses the energy in the energy storage capacitor to discharge to generate pulses.
  • the driving pulse input circuit provides a driving signal for the discharge circuit, and the sharpening waveform circuit acts as a sharpening pulse drop. Along the role.
  • connection relationship of the nanosecond pulse power supply for micro-EDM based on avalanche transistor is: one end of the first current-limiting resistor R1 is connected to the DC power supply, and the other end is respectively connected to the energy storage capacitor C1 and the first avalanche transistor T1 Connected to the collector;
  • the anode of the diode D1 is connected to the energy storage capacitor C1, the emitter of the second avalanche diode T2 and the control resistor R2, and the cathode is connected to the DC power supply, the third current limiting resistor R4, the second current limiting resistor R3, and the first avalanche transistor T1.
  • the emitter of is connected to the collector of the second avalanche diode T2;
  • One end of the energy storage capacitor C1 is connected to the first current limiting resistor R1 and the collector of the first avalanche transistor T1, and the other end is connected to the anode of the diode D1, the emitter of the second avalanche diode T2, and the control resistor R2;
  • the base of the first avalanche transistor T1 is connected to the second current-limiting resistor R3 and the third current-limiting resistor R4, the collector is connected to the first current-limiting resistor R1 and the energy storage capacitor C1, and the emitter is connected to the DC power supply and the The three current-limiting resistor R4, the second current-limiting resistor R3, the cathode of the diode D1 and the collector of the second avalanche diode T2 are connected;
  • control resistor R2 One end of the control resistor R2 is connected to the energy storage capacitor C1, the anode of the diode D1 and the emitter of the second avalanche diode T2, and the other end is connected to the base of the second avalanche diode T2;
  • One end of the second current-limiting resistor R3 is connected to the third current-limiting resistor R4 and the base of the first avalanche transistor T1, and the other end is respectively connected to the DC power supply, the third current-limiting resistor R4, the emitter of the first avalanche transistor T1, and the diode.
  • the cathode of D1 is connected to the collector of the second avalanche diode T2;
  • One end of the third current-limiting resistor R4 is connected to the second current-limiting resistor R3 and the base of the first avalanche transistor T1, and the other end is connected to the DC power supply, the second current-limiting resistor R3, the emitter of the first avalanche transistor T1, and the diode.
  • the cathode of D1 is connected to the collector of the second avalanche diode T2;
  • the base of the second avalanche transistor T2 is connected to the control resistor R2, the emitter is connected to the storage capacitor C1, the anode of the diode D1 and the control resistor R2, and the collector is connected to the DC power supply, the third current limiting resistor R4, and the second limiting resistor.
  • the current resistance R3, the emitter of the first avalanche transistor T1, and the cathode of the diode D1 are connected.
  • the emitter of the first avalanche transistor T1 is electrically connected to the positive output port of the discharge circuit
  • one end of the control resistor R2 is electrically connected to the other end of the energy storage capacitor C1
  • the other end of the control resistor R2 is electrically connected to the negative output of the discharge circuit.
  • the port is electrically connected.
  • the collector of the second avalanche transistor T2 is electrically connected to the positive output port of the discharge circuit
  • the base of the second avalanche transistor T2 is electrically connected to the negative output port
  • the emitter of the second avalanche transistor T2 is electrically connected to the other end of the control resistor R2 .
  • the charging circuit charges the energy storage capacitor in the circuit.
  • the discharge circuit uses an avalanche triode as a switching element to obtain a steeper pulse rising edge, and connects the tool electrode and the workpiece.
  • the driving pulse input circuit controls the on-off of the avalanche transistor in the discharge circuit.
  • the sharpening waveform circuit is controlled by the feedback of the discharge circuit. When the discharge between the electrode and the workpiece breaks down, the sharpening circuit shorts the tool electrode and the workpiece to sharpen the falling edge of the pulse.
  • the input driving pulse type it can generate single or continuous multiple nanosecond discharge pulses, and the peak voltage can be adjusted by DC power supply.
  • the driving pulse input circuit inputs a positive pulse signal
  • the first avalanche transistor T1 in the discharge circuit is turned on, and a voltage is generated between the output terminals of the discharge circuit with a pulse rising edge.
  • the control resistor R2 generates a voltage difference so that the second avalanche diode T2 in the sharpening waveform circuit is turned on, and the output terminal of the discharge circuit is short-circuited to obtain a pulse falling edge and a narrow pulse width.
  • the power supply of the present application uses the ultra-fast switching speed of an avalanche transistor to obtain short rising edges and short falling edges, thereby obtaining nanosecond ultra-narrow pulse width pulses.
  • the charging circuit charges the energy storage capacitor, and when the driving pulse input circuit inputs a positive pulse signal, the avalanche tube in the discharging circuit is turned on, so that a voltage is generated between the output terminals of the discharging circuit and has a steeper pulse rising edge.
  • the control resistor When the discharging circuit generates power, there is a certain When the current flows, the control resistor will have a certain voltage difference, which will cause the avalanche tube in the sharpening waveform circuit to open, so the output terminal of the discharge circuit is short-circuited, and a steeper pulse falling edge and a narrower pulse width are obtained.
  • the on-off of the first avalanche transistor T1 in the discharge circuit is controlled by controlling the pulse signal input by the driving pulse input circuit.
  • a single or continuous multiple nanosecond discharge pulses are generated according to the type of the input pulse of the driving pulse input circuit.
  • the peak voltage of the nanosecond discharge pulse is adjusted by adjusting the DC power supply.
  • the sharpening waveform circuit is feedback controlled by the discharge circuit. After the discharge breakdown between the tool electrode and the workpiece between the base and collector of the second avalanche transistor T2, the sharpening The waveform circuit shorts the tool electrode and the workpiece to sharpen the falling edge of the nanosecond discharge pulse.
  • the DC power supply is connected to the input terminal of the charging circuit
  • the driving pulse signal is connected to the input terminal of the driving pulse input circuit
  • the tool electrode and the workpiece are connected to the base of the second avalanche transistor T2
  • the specific operation steps of the nanosecond pulse power supply for micro-EDM based on avalanche triode are: (1) Connect the DC power supply to the input terminal of the charging circuit; (2) Connect the drive pulse signal to the drive pulse input circuit Input terminal; (3) Connect the tool electrode and the workpiece to the output terminal of the discharge circuit; (4) Input the driving pulse signal, and a single or continuous nanosecond narrow pulse width pulse will be generated between the tool electrode and the workpiece.
  • the capacity of the energy storage capacitor C1 in the discharge circuit is small, which can ensure a fast charging and discharging speed, and the discharge pulse width is also relatively narrow.
  • the diode D1 used in the charging circuit ensures that the energy storage capacitor C1 can be charged normally, and it can ensure that the tool electrode and the workpiece are not discharged during the charging process, and the tool electrode and the workpiece are normally discharged during the discharge process.
  • the avalanche transistors used in the discharge circuit and the steepening pulse circuit have a very fast opening speed, which can ensure that the rising and falling edges of the pulse are relatively short.
  • Figure 3 shows the physical diagram of the nanosecond pulse power supply for micro EDM based on avalanche transistors
  • Figure 4 shows the specific operation of the nanosecond pulse power supply for micro EDM based on avalanche transistors
  • Method first, (1) connect the DC power supply to the input terminal of the charging circuit, and the input range of the DC power supply is 7V-150V; (2) connect the driving pulse signal source to the input terminal of the driving pulse input circuit, and adjust the driving pulse signal source Parameters, the driving pulse signal amplitude is 5-10V, and the frequency is 1KHz-100MHz; (3) Connect the tool electrode and workpiece to the output terminal of the discharge circuit; (4)
  • the parameter example range of each component is: the first current limit Resistance (R1): 10 ohms-1000 ohms, control resistance (R2): 2 ohms-50 ohms, the second current limiting resistor (R3): 10 ohms-200 ohms, the third current limiting resistor (R4):
  • the charging circuit charges the energy storage capacitor in the circuit, and the discharge circuit uses the energy in the energy storage capacitor to discharge to generate pulses and drive pulse input
  • the circuit provides the driving signal for the discharge circuit, and the sharpening waveform circuit plays the role of sharpening the falling edge of the pulse.
  • the avalanche transistor is used as the switching element, which has fast opening speed and high switching frequency, and can obtain nanosecond pulse width pulses, which can effectively improve the quality and efficiency of micro-EDM machining.
  • the power supply can generate single or continuous nanosecond pulses according to the type of driving pulse signal.
  • a single pulse can be used for the research of micro-EDM principles, and continuous pulses can be practically applied to micro-EDM technology and equipment.
  • the nanosecond pulse power supply has a small and compact structure, and is easy to integrate into micro-EDM equipment, with low cost and high stability.
  • first and second are only used for descriptive purposes, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of indicated technical features. Therefore, the features defined with “first” and “second” may explicitly or implicitly include at least one of the features. In the description of the present application, "a plurality of” means at least two, such as two, three, etc., unless specifically defined otherwise.
  • the terms “installed”, “connected”, “connected”, “fixed” and other terms should be understood in a broad sense, for example, it can be a fixed connection or a detachable connection , Or integrated; it can be mechanically connected or electrically connected; it can be directly connected or indirectly connected through an intermediary, it can be the internal communication of two components or the interaction relationship between two components, unless otherwise specified The limit.
  • installed can be a fixed connection or a detachable connection , Or integrated; it can be mechanically connected or electrically connected; it can be directly connected or indirectly connected through an intermediary, it can be the internal communication of two components or the interaction relationship between two components, unless otherwise specified The limit.
  • the specific meanings of the above terms in this application can be understood according to specific circumstances.
  • the “on” or “under” of the first feature on the second feature may be in direct contact with the first and second features, or indirectly through an intermediary. contact.
  • the "above”, “above” and “above” of the first feature on the second feature may mean that the first feature is directly above or obliquely above the second feature, or simply means that the level of the first feature is higher than the second feature.
  • the “below”, “below” and “below” of the second feature of the first feature may mean that the first feature is directly below or obliquely below the second feature, or simply means that the level of the first feature is smaller than the second feature.

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Abstract

一种基于雪崩三极管的微细电火花加工用纳秒脉冲电源，包括：直流电源（V1）、充电电路、放电电路、驱动脉冲输入电路和陡化波形电路，其中，充电电路包括：第一限流电阻（R1）和二极管（D1）；放电电路包括：储能电容（C1）、第一雪崩三极管（T1）和控制电阻（R2）；驱动脉冲电路包括：第二限流电阻（R3）和第三限流电阻（R4）；陡化波形电路包括：第二雪崩三极管（T2）；驱动脉冲输入电路控制放电电路中雪崩三极管（T1）的通断，根据输入的驱动脉冲的类型，产生单个或者连续多个纳秒级放电脉冲，峰值电压可通过直流电源（V1）调节。该电源采用雪崩三极管（T1）作为开关元件，打开速度快，开关频率高，可以获得纳秒级脉宽脉冲，有效提高微细电火花加工质量和加工效率。

Description

基于雪崩三极管的微细电火花加工用纳秒脉冲电源
相关申请的交叉引用
本申请要求清华大学于2019年06月26日提交的、发明名称为“基于雪崩三极管的微细电火花加工用纳秒脉冲电源”的、中国专利申请号“201910559212.6”的优先权。
技术领域
本申请属于微细特种加工技术领域，特别涉及一种基于雪崩三极管的微细电火花加工用纳秒脉冲电源。
背景技术
脉冲电源对微细电火花加工效率、加工精度、加工过程稳定性，以及工具电极损耗等多个方面有着重要影响。一般情况下，在电火花加工中采用窄脉宽放电脉冲电源，能够获得更好的加工质量、更高的加工效率。并且，窄脉宽放电蚀除中气化蚀除比例更高，有利于获得更薄的重铸层，从而可减小甚至避免微裂纹和热影响层的表面损伤。因此，窄脉宽脉冲电源是提高电火花加工工艺效果的有效技术途径之一。
窄脉宽窄至纳秒级的脉冲电源是一个重要研究发展方向。为实现纳米尺度(纳米去除分辨率)的更微细电火花加工，更微小单脉冲放电能量的纳米级窄脉宽脉冲电源是工艺研究和装备研发的前提。但限于电路结构和电子元件性能，目前纳秒级窄脉宽脉冲电源仍然难以实现。
现有的电火花加工用脉冲电源的电路结构主要分为两类：电子管或晶体管独立式和RC弛张式。电子管或晶体管独立式脉冲电源难以获得足够窄脉宽的脉冲，而常规RC弛张式脉冲电源放电频率较慢，并且这两种电路都难以获得稳定可控的单脉冲放电。在这两种电路结构中，为了获得纳秒级窄脉宽，现有技术中都较多地采用开关频率高的功率管。然而受制于功率管的制造工艺和开关频率限制，使得电路的成本高昂，而且难以获得足够窄的脉宽。
特别是对于超窄脉宽电火花加工用脉冲电源(比如，脉宽<25ns)，目前尚缺乏一种电压可调、放电频率高、稳定性好并且脉宽达到纳秒级的脉冲电源。
发明内容
本申请旨在至少在一定程度上解决相关技术中的技术问题之一。
为此，本申请的目的在于提出一种基于雪崩三极管的微细电火花加工用纳秒脉冲电源，该电源采用雪崩三极管作为开关元件，打开速度快，开关频率高，可以获得纳秒级脉宽脉冲，可有效提高微细电火花加工质量和加工效率。
为达到上述目的，本申请实施例提出了一种基于雪崩三极管的微细电火花加工用纳秒脉冲电源，包括：直流电源、充电电路、放电电路、驱动脉冲输入电路和陡化波形电路。
所述充电电路包括：第一限流电阻R1和二极管D1；
所述放电电路包括：储能电容C1、第一雪崩三极管T1和控制电阻R2；
所述驱动脉冲电路包括：第二限流电阻R3和第三限流电阻R4；
所述陡化波形电路包括：第二雪崩三极管T2；
其中，所述第一限流电阻R1一端与所述直流电源相连，另一端分别与所述储能电容C1和所述第一雪崩三极管T1的集电极相连；
所述二极管D1的正极分别与所述储能电容C1、所述第二雪崩二极管T2的发射极和所述控制电阻R2相连，负极分别与所述直流电源、所述第三限流电阻R4、所述第二限流电阻R3、所述第一雪崩三极管T1的发射极和所述第二雪崩二极管T2的集电极相连；
所述储能电容C1一端分别与所述第一限流电阻R1和所述第一雪崩三极管T1的集电极相连，另一端分别与所述二极管D1的正极、所述第二雪崩二极管T2的发射极和所述控制电阻R2相连；
所述第一雪崩三极管T1的基极分别与所述第二限流电阻R3和所述第三限流电阻R4相连，集电极分别与所述第一限流电阻R1和所述储能电容C1相连，发射极分别与所述直流电源、所述第三限流电阻R4、所述第二限流电阻R3、所述二极管D1的负极和所述第二雪崩二极管T2的集电极相连；
所述控制电阻R2一端分别与所述储能电容C1、所述二极管D1的正极和所述第二雪崩二极管T2的发射极相连，另一端与所述第二雪崩二极管T2的基极相连；
所述第二限流电阻R3一端分别与所述第三限流电阻R4和所述第一雪崩三极管T1的基极相连，另一端分别与所述直流电源、所述第三限流电阻R4、所述第一雪崩三极管T1的发射极、所述二极管D1的负极和所述第二雪崩二极管T2的集电极相连；
所述第三限流电阻R4一端分别与所述第二限流电阻R3和所述第一雪崩三极管T1的基极相连，另一端分别与所述直流电源、所述第二限流电阻R3、所述第一雪崩三极管T1的发射极、所述二极管D1的负极和所述第二雪崩二极管T2的集电极相连；
所述第二雪崩三极管T2的基极与所述控制电阻R2相连，发射极分别与所述储能电容C1、所述二极管D1的正极和所述控制电阻R2相连，集电极分别与所述直流电源、所述第 三限流电阻R4、所述第二限流电阻R3、所述第一雪崩三极管T1的发射极、所述二极管D1的负极相连。
本申请实施例的基于雪崩三极管的微细电火花加工用纳秒脉冲电源，根据本申请实施例提出的基于雪崩三极管的微细电火花加工用纳秒脉冲电源，充电电路对电路中的储能电容进行充电，放电电路利用储能电容中能量进行放电从而产生脉冲，驱动脉冲输入电路为放电电路提供驱动信号，陡化波形电路起到陡化脉冲下降沿的作用。采用雪崩三极管作为开关元件，打开速度快，开关频率高，可以获得纳秒级脉宽脉冲，可有效提高微细电火花加工质量和加工效率。该电源可根据驱动脉冲信号类型，产生单个或连续的纳秒级脉冲，单个脉冲可以用于微细电火花加工原理的研究，连续脉冲可以实际应用于微细电火花加工工艺及装备中。并且纳秒级脉冲电源结构小巧紧凑，易于集成于微细电火花加工装备中，成本低廉、稳定性高。
另外，根据本申请上述实施例的基于雪崩三极管的微细电火花加工用纳秒脉冲电源还可以具有以下附加的技术特征：
进一步地，在本申请的一个实施例中，所述充电电路通过所述直流电源为所述储能电容C1充电。
进一步地，在本申请的一个实施例中，通过控制所述驱动脉冲输入电路输入的脉冲信号来控制所述放电电路中所述第一雪崩三极管T1的通断。
进一步地，在本申请的一个实施例中，所述驱动脉冲输入电路输入正脉冲信号时，所述放电电路中的所述第一雪崩三极管T1打开，所述放电电路输出端之间产生电压并具有脉冲上升沿，当所述放电电路中放电并有电流流过时，所述控制电阻R2产生电压差从而使所述陡化波形电路中的所述第二雪崩二极管T2打开，所述放电电路输出端短路，获得脉冲下降沿和窄脉宽。
进一步地，在本申请的一个实施例中，根据所述驱动脉冲输入电路输入脉冲的类型产生单个或者连续多个纳秒级放电脉冲。
进一步地，在本申请的一个实施例中，通过调节所述直流电源来调节所述纳秒级放电脉冲的峰值电压。
进一步地，在本申请的一个实施例中，所述陡化波形电路受所述放电电路反馈控制，在所述第二雪崩三极管T2的基极与集电极之间的工具电极和工件之间放电击穿后，所述陡化波形电路将工具电极和工件短路以陡化所述纳秒级放电脉冲的下降沿。
进一步地，在本申请的一个实施例中，将所述直流电源接入所述充电电路输入端，将驱动脉冲信号接入所述驱动脉冲输入电路输入端，将工具电极和工件接入所述第二雪崩三极管T2的基极和集电极之间，输入驱动信号后，工具电极和工件之间将产生单个或连续纳 秒级窄脉宽脉冲。
本申请附加的方面和优点将在下面的描述中部分给出，部分将从下面的描述中变得明显，或通过本申请的实践了解到。
附图说明
本申请上述的和/或附加的方面和优点从下面结合附图对实施例的描述中将变得明显和容易理解，其中：
图1为根据本申请一个实施例的基于雪崩三极管的微细电火花加工用纳秒脉冲电源电路图；
图2为根据本申请一个实施例的基于雪崩三极管的微细电火花加工用纳秒脉冲电源的原理意图；
图3为根据本申请一个实施例的基于雪崩三极管的微细电火花加工用纳秒脉冲电源的实物图；
图4为根据本申请一个实施例的基于雪崩三极管的微细电火花加工用纳秒脉冲电源的操作流程图；
图5为根据本申请一个实施例的基于雪崩三极管的微细电火花加工用纳秒脉冲电源的放电波形示意图。
具体实施方式
下面详细描述本申请的实施例，实施例的示例在附图中示出，其中自始至终相同或类似的标号表示相同或类似的元件或具有相同或类似功能的元件。下面通过参考附图描述的实施例是示例性的，旨在用于解释本申请，而不能理解为对本申请的限制。
下面参照附图描述根据本申请实施例提出的基于雪崩三极管的微细电火花加工用纳秒脉冲电源。
图1为根据本申请一个实施例的基于雪崩三极管的微细电火花加工用纳秒脉冲电源电路图。
如图1所示，该基于雪崩三极管的微细电火花加工用纳秒脉冲电源包括以下步骤：直流电源、充电电路、放电电路、驱动脉冲输入电路和陡化波形电路。
其中，充电电路包括：第一限流电阻R1和二极管D1。
放电电路包括：储能电容C1、第一雪崩三极管T1和控制电阻R2。
驱动脉冲电路包括：第二限流电阻R3和第三限流电阻R4。
陡化波形电路包括：第二雪崩三极管T2。
充电电路通过直流电源对电路中的储能电容进行充电，放电电路利用储能电容中能量进行放电从而产生脉冲，驱动脉冲输入电路为放电电路提供驱动信号，陡化波形电路起到陡化脉冲下降沿的作用。
如图1所示，基于雪崩三极管的微细电火花加工用纳秒脉冲电源的连接关系为：第一限流电阻R1一端与直流电源相连，另一端分别与储能电容C1和第一雪崩三极管T1的集电极相连；
二极管D1的正极分别与储能电容C1、第二雪崩二极管T2的发射极和控制电阻R2相连，负极分别与直流电源、第三限流电阻R4、第二限流电阻R3、第一雪崩三极管T1的发射极和第二雪崩二极管T2的集电极相连；
储能电容C1一端分别与第一限流电阻R1和第一雪崩三极管T1的集电极相连，另一端分别与二极管D1的正极、第二雪崩二极管T2的发射极和控制电阻R2相连；
第一雪崩三极管T1的基极分别与第二限流电阻R3和第三限流电阻R4相连，集电极分别与第一限流电阻R1和储能电容C1相连，发射极分别与直流电源、第三限流电阻R4、第二限流电阻R3、二极管D1的负极和第二雪崩二极管T2的集电极相连；
控制电阻R2一端分别与储能电容C1、二极管D1的正极和第二雪崩二极管T2的发射极相连，另一端与第二雪崩二极管T2的基极相连；
第二限流电阻R3一端分别与第三限流电阻R4和第一雪崩三极管T1的基极相连，另一端分别与直流电源、第三限流电阻R4、第一雪崩三极管T1的发射极、二极管D1的负极和第二雪崩二极管T2的集电极相连；
第三限流电阻R4一端分别与第二限流电阻R3和第一雪崩三极管T1的基极相连，另一端分别与直流电源、第二限流电阻R3、第一雪崩三极管T1的发射极、二极管D1的负极和第二雪崩二极管T2的集电极相连；
第二雪崩三极管T2的基极与控制电阻R2相连，发射极分别与储能电容C1、二极管D1的正极和控制电阻R2相连，集电极分别与直流电源、第三限流电阻R4、第二限流电阻R3、第一雪崩三极管T1的发射极、二极管D1的负极相连。
可以理解的是，第一雪崩三极管T1的发射极与放电电路的正输出端口电连接，控制电阻R2的一端和储能电容C1另一端电连接，控制电阻R2的另一端与放电电路的负输出端口电连接。第二雪崩三极管T2的集电极与放电电路的正输出端口电连接，第二雪崩三极管T2的基极与负输出端口电连接，第二雪崩三极管T2的发射极与控制电阻R2的另一端电连接。
进一步地，如图2所示，充电电路对电路中的储能电容充电。放电电路使用雪崩三极管作为开关元件以获得较陡的脉冲上升沿，并外接工具电极和工件。驱动脉冲输入 电路控制放电电路中雪崩三极管的通断。陡化波形电路受放电电路反馈控制，当电极与工件之间放电击穿后，陡化电路将工具电极与工件短路从而陡化脉冲下降沿。根据输入的驱动脉冲的类型，能够产生单个或者连续多个纳秒级放电脉冲，峰值电压可通过直流电源调节。
进一步地，在本申请的一个实施例中，驱动脉冲输入电路输入正脉冲信号时，放电电路中的第一雪崩三极管T1打开，放电电路输出端之间产生电压并具有脉冲上升沿，当放电电路中放电并有电流流过时，控制电阻R2产生电压差从而使陡化波形电路中的第二雪崩二极管T2打开，放电电路输出端短路，获得脉冲下降沿和窄脉宽。
具体地，本申请的电源利用雪崩三极管超快的开关速度获得短上升沿和短下降沿，从而获得纳秒级超窄脉宽脉冲。充电电路对储能电容充电，驱动脉冲输入电路输入正脉冲信号时，放电电路中雪崩管打开，使得放电电路输出端间产生电压并具有较陡的脉冲上升沿，当放电电路发生发电而有一定电流流过，控制电阻将有一定的电压差从而引起陡化波形电路中雪崩管的打开，因此放电电路输出端短路，获得较陡的脉冲下降沿和较窄的脉宽。
进一步地，在本申请的一个实施例中，通过控制驱动脉冲输入电路输入的脉冲信号来控制放电电路中第一雪崩三极管T1的通断。
进一步地，在本申请的一个实施例中，根据驱动脉冲输入电路输入脉冲的类型产生单个或者连续多个纳秒级放电脉冲。
进一步地，在本申请的一个实施例中，通过调节直流电源来调节纳秒级放电脉冲的峰值电压。
进一步地，在本申请的一个实施例中，陡化波形电路受放电电路反馈控制，在第二雪崩三极管T2的基极与集电极之间的工具电极和工件之间放电击穿后，陡化波形电路将工具电极和工件短路以陡化纳秒级放电脉冲的下降沿。
进一步地，在本申请的一个实施例中，将直流电源接入充电电路输入端，将驱动脉冲信号接入驱动脉冲输入电路输入端，将工具电极和工件接入第二雪崩三极管T2的基极和集电极之间，输入驱动信号后，工具电极和工件之间将产生单个或连续纳秒级窄脉宽脉冲。
具体地，上述的基于雪崩三极管的微细电火花加工用纳秒脉冲电源的具体操作步骤为：(1)将直流电源接入充电电路输入端；(2)将驱动脉冲信号接入驱动脉冲输入电路输入端；(3)将工具电极和工件接入放电电路输出端；(4)输入驱动脉冲信号，工具电极和工件间将产生单个或连续纳秒级窄脉宽脉冲。
需要说明的是，放电电路中的储能电容C1的容量较小，可以保证充电和放电速度 快，放电脉宽也比较窄。
充电电路中使用的二极管D1保证储能电容C1可正常充电，且能保证充电过程中工具电极与工件间不放电，放电过程中工具电极和工件间正常放电。
放电电路和陡化脉冲电路使用的雪崩三极管打开速度极快，可以保证脉冲上升沿和下降沿均比较短。
如图3和图4所示，图3展示了基于雪崩三极管的微细电火花加工用纳秒脉冲电源的实物图，图4展示了基于雪崩三极管的微细电火花加工用纳秒脉冲电源的具体操作方法，首先，(1)将直流电源接入充电电路输入端，直流电源的输入范围在7V-150V；(2)将驱动脉冲信号源接入驱动脉冲输入电路输入端，调节驱动脉冲信号源的参数，驱动脉冲信号幅值为5-10V，频率1KHz-100MHz均可；(3)将工具电极和工件接入放电电路输出端；(4)各个元器件的参数示例范围为：第一限流电阻(R1)：10欧姆-1000欧姆，控制电阻(R2)：2欧姆-50欧姆，第二限流电阻(R3)：10欧姆-200欧姆，第三限流电阻(R4)：10欧姆-200欧姆，储能电容(C1)：3pF-1000pF，雪崩三极管(T1)和雪崩三极管(T2)：有雪崩特性的三极管，如型号MCH3245和MMBT2222；(5)输入连续驱动脉冲信号，工具电极和工件间将产生连续窄脉宽脉冲；若输入控制脉冲为单个上升沿，工具电极和工件间将产生单个窄脉宽脉冲。
如图5所示，通过上述操作，得到了一个幅值15.4V、脉宽中值10ns的单个窄脉宽脉冲放电。
根据本申请实施例提出的基于雪崩三极管的微细电火花加工用纳秒脉冲电源，充电电路对电路中的储能电容进行充电，放电电路利用储能电容中能量进行放电从而产生脉冲，驱动脉冲输入电路为放电电路提供驱动信号，陡化波形电路起到陡化脉冲下降沿的作用。采用雪崩三极管作为开关元件，打开速度快，开关频率高，可以获得纳秒级脉宽脉冲，可有效提高微细电火花加工质量和加工效率。该电源可根据驱动脉冲信号类型，产生单个或连续的纳秒级脉冲，单个脉冲可以用于微细电火花加工原理的研究，连续脉冲可以实际应用于微细电火花加工工艺及装备中。并且纳秒级脉冲电源结构小巧紧凑，易于集成于微细电火花加工装备中，成本低廉、稳定性高。
在本申请的描述中，需要理解的是，术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”“内”、“外”、“顺时针”、“逆时针”、“轴向”、“径向”、“周向”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本申请和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本申请的限制。
此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者 隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括至少一个该特征。在本申请的描述中，“多个”的含义是至少两个，例如两个，三个等，除非另有明确具体的限定。
在本申请中，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”、“固定”等术语应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或成一体；可以是机械连接，也可以是电连接；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通或两个元件的相互作用关系，除非另有明确的限定。对于本领域的普通技术人员而言，可以根据具体情况理解上述术语在本申请中的具体含义。
在本申请中，除非另有明确的规定和限定，第一特征在第二特征“上”或“下”可以是第一和第二特征直接接触，或第一和第二特征通过中间媒介间接接触。而且，第一特征在第二特征“之上”、“上方”和“上面”可是第一特征在第二特征正上方或斜上方，或仅仅表示第一特征水平高度高于第二特征。第一特征在第二特征“之下”、“下方”和“下面”可以是第一特征在第二特征正下方或斜下方，或仅仅表示第一特征水平高度小于第二特征。
在本说明书的描述中，参考术语“一个实施例”、“一些实施例”、“示例”、“具体示例”、或“一些示例”等的描述意指结合该实施例或示例描述的具体特征、结构、材料或者特点包含于本申请的至少一个实施例或示例中。在本说明书中，对上述术语的示意性表述不必须针对的是相同的实施例或示例。而且，描述的具体特征、结构、材料或者特点可以在任一个或多个实施例或示例中以合适的方式结合。此外，在不相互矛盾的情况下，本领域的技术人员可以将本说明书中描述的不同实施例或示例以及不同实施例或示例的特征进行结合和组合。
尽管上面已经示出和描述了本申请的实施例，可以理解的是，上述实施例是示例性的，不能理解为对本申请的限制，本领域的普通技术人员在本申请的范围内可以对上述实施例进行变化、修改、替换和变型。

Claims (8)

  1. 一种基于雪崩三极管的微细电火花加工用纳秒脉冲电源，其特征在于，包括：直流电源、充电电路、放电电路、驱动脉冲输入电路和陡化波形电路；
    所述充电电路包括：第一限流电阻R1和二极管D1；
    所述放电电路包括：储能电容C1、第一雪崩三极管T1和控制电阻R2；
    所述驱动脉冲电路包括：第二限流电阻R3和第三限流电阻R4；
    所述陡化波形电路包括：第二雪崩三极管T2；
    其中，所述第一限流电阻R1一端与所述直流电源相连，另一端分别与所述储能电容C1和所述第一雪崩三极管T1的集电极相连；
    所述二极管D1的正极分别与所述储能电容C1、所述第二雪崩二极管T2的发射极和所述控制电阻R2相连，负极分别与所述直流电源、所述第三限流电阻R4、所述第二限流电阻R3、所述第一雪崩三极管T1的发射极和所述第二雪崩二极管T2的集电极相连；
    所述储能电容C1一端分别与所述第一限流电阻R1和所述第一雪崩三极管T1的集电极相连，另一端分别与所述二极管D1的正极、所述第二雪崩二极管T2的发射极和所述控制电阻R2相连；
    所述第一雪崩三极管T1的基极分别与所述第二限流电阻R3和所述第三限流电阻R4相连，集电极分别与所述第一限流电阻R1和所述储能电容C1相连，发射极分别与所述直流电源、所述第三限流电阻R4、所述第二限流电阻R3、所述二极管D1的负极和所述第二雪崩二极管T2的集电极相连；
    所述控制电阻R2一端分别与所述储能电容C1、所述二极管D1的正极和所述第二雪崩二极管T2的发射极相连，另一端与所述第二雪崩二极管T2的基极相连；
    所述第二限流电阻R3一端分别与所述第三限流电阻R4和所述第一雪崩三极管T1的基极相连，另一端分别与所述直流电源、所述第三限流电阻R4、所述第一雪崩三极管T1的发射极、所述二极管D1的负极和所述第二雪崩二极管T2的集电极相连；
    所述第三限流电阻R4一端分别与所述第二限流电阻R3和所述第一雪崩三极管T1的基极相连，另一端分别与所述直流电源、所述第二限流电阻R3、所述第一雪崩三极管T1的发射极、所述二极管D1的负极和所述第二雪崩二极管T2的集电极相连；
    所述第二雪崩三极管T2的基极与所述控制电阻R2相连，发射极分别与所述储能电容C1、所述二极管D1的正极和所述控制电阻R2相连，集电极分别与所述直流电源、所述第三限流电阻R4、所述第二限流电阻R3、所述第一雪崩三极管T1的发射极、所述二极管D1的负极相连。
  2. 根据权利要求1所述的基于雪崩三极管的微细电火花加工用纳秒脉冲电源，其特征在于，所述充电电路通过所述直流电源为所述储能电容C1充电。
  3. 根据权利要求1所述的基于雪崩三极管的微细电火花加工用纳秒脉冲电源，其特征在于，通过控制所述驱动脉冲输入电路输入的脉冲信号来控制所述放电电路中所述第一雪崩三极管T1的通断。
  4. 根据权利要求1所述的基于雪崩三极管的微细电火花加工用纳秒脉冲电源，其特征在于，所述驱动脉冲输入电路输入正脉冲信号时，所述放电电路中的所述第一雪崩三极管T1打开，所述放电电路输出端之间产生电压并具有脉冲上升沿，当所述放电电路中放电并有电流流过时，所述控制电阻R2产生电压差从而使所述陡化波形电路中的所述第二雪崩二极管T2打开，所述放电电路输出端短路，获得脉冲下降沿和窄脉宽。
  5. 根据权利要求1所述的基于雪崩三极管的微细电火花加工用纳秒脉冲电源，其特征在于，根据所述驱动脉冲输入电路输入脉冲的类型产生单个或者连续多个纳秒级放电脉冲。
  6. 根据权利要求5所述的基于雪崩三极管的微细电火花加工用纳秒脉冲电源，其特征在于，通过调节所述直流电源来调节所述纳秒级放电脉冲的峰值电压。
  7. 根据权利要求1所述的基于雪崩三极管的微细电火花加工用纳秒脉冲电源，其特征在于，所述陡化波形电路受所述放电电路反馈控制，在所述第二雪崩三极管T2的基极与集电极之间的工具电极和工件之间放电击穿后，所述陡化波形电路将工具电极和工件短路以陡化所述纳秒级放电脉冲的下降沿。
  8. 根据权利要求1所述的基于雪崩三极管的微细电火花加工用纳秒脉冲电源，其特征在于，将所述直流电源接入所述充电电路输入端，将驱动脉冲信号接入所述驱动脉冲输入电路输入端，将工具电极和工件接入所述第二雪崩三极管T2的基极和集电极之间，输入驱动信号后，工具电极和工件之间将产生单个或连续纳秒级窄脉宽脉冲。
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