WO2020257223A1 - Multi-stage, multi-zone substrate-positioning systems - Google Patents
Multi-stage, multi-zone substrate-positioning systems Download PDFInfo
- Publication number
- WO2020257223A1 WO2020257223A1 PCT/US2020/038042 US2020038042W WO2020257223A1 WO 2020257223 A1 WO2020257223 A1 WO 2020257223A1 US 2020038042 W US2020038042 W US 2020038042W WO 2020257223 A1 WO2020257223 A1 WO 2020257223A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- translation stage
- zone
- chamber
- plate
- substrate
- Prior art date
Links
- 238000013519 translation Methods 0.000 claims abstract description 257
- 239000000758 substrate Substances 0.000 claims abstract description 80
- 230000004888 barrier function Effects 0.000 claims abstract description 58
- 238000000034 method Methods 0.000 claims description 31
- 239000004065 semiconductor Substances 0.000 claims description 14
- 230000008878 coupling Effects 0.000 claims description 7
- 238000010168 coupling process Methods 0.000 claims description 7
- 238000005859 coupling reaction Methods 0.000 claims description 7
- 238000010926 purge Methods 0.000 claims description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 4
- 239000002826 coolant Substances 0.000 claims description 3
- 239000007788 liquid Substances 0.000 claims description 2
- 229910052757 nitrogen Inorganic materials 0.000 claims description 2
- 238000005086 pumping Methods 0.000 claims 2
- 230000014616 translation Effects 0.000 description 189
- 238000007689 inspection Methods 0.000 description 15
- 238000003860 storage Methods 0.000 description 5
- 239000007789 gas Substances 0.000 description 4
- 239000000356 contaminant Substances 0.000 description 3
- 238000011109 contamination Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 239000000314 lubricant Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000010943 off-gassing Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
- H01L21/681—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment using optical controlling means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70716—Stages
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70808—Construction details, e.g. housing, load-lock, seals or windows for passing light in or out of apparatus
- G03F7/70841—Constructional issues related to vacuum environment, e.g. load-lock chamber
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/20—Means for supporting or positioning the objects or the material; Means for adjusting diaphragms or lenses associated with the support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
- H01J37/28—Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67259—Position monitoring, e.g. misposition detection or presence detection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
- H01J2237/2005—Seal mechanisms
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
- H01J2237/202—Movement
- H01J2237/20221—Translation
Definitions
- This disclosure relates to systems for positioning a substrate (e.g., a
- semiconductor wafer or reticle and more specifically to substrate-positioning systems with multiple translation stages.
- Translation stages are used in chambers (e.g., vacuum chambers) to translate substrates.
- an x-y-z translation stage may be used in a vacuum chamber to translate a substrate in three directions (i.e., in the x-, y-, and z-directions).
- Such a stage may be used in a scanning electron microscope (SEM).
- SEM scanning electron microscope
- Translation stages use lubricant, which outgasses and thus contaminates the chamber and the substrate.
- Plastic materials e.g., insulators and motor components
- Translation stages are hard to cool, because the flexible tubing that might be used to provide coolant is another source of outgassing.
- Translation stages especially x-y-z translation stages, tend to be heavy.
- a typical x-y-z translation stage might weigh approximately 100 kg. This weight causes the stage to move slowly (e.g., taking 200-500 milliseconds to move a few millimeters) and to have a long settling time during which vibrations attenuate.
- a system includes a first x-y translation stage, a second x-y translation stage, and a chuck, which are disposed in a chamber.
- the second x-y translation stage is situated above and coupled to the first x-y translation stage.
- the chuck is situated above and coupled to the second x-y translation stage.
- the chuck is configured to support a substrate and to be translated by the first and second x-y stages in x- and y-directions, wherein the x- and y-directions are substantially parallel to a surface of the chuck on which the substrate is to be mounted.
- a first barrier and a second barrier are also disposed in the chamber.
- the first barrier is coupled to the first x-y translation stage to separate a first zone of the chamber from a second zone of the chamber.
- the second barrier is coupled to the second x-y translation stage to separate the first zone of the chamber from a third zone of the chamber.
- the first zone includes space above and beside the chuck.
- the second zone includes space beside the first x-y translation stage.
- the third zone includes space beside the second x-y translation stage.
- a method includes mounting a substrate on a chuck to be translated in a chamber by a first x-y translation stage and a second x-y translation stage.
- the second x-y translation stage is situated above and coupled to the first x-y translation stage.
- the chuck is situated above and coupled to the second x-y translation stage.
- a first barrier is coupled to the first x-y translation stage to separate a first zone of the chamber from a second zone of the chamber.
- a second barrier is coupled to the second x-y translation stage to separate the first zone of the chamber from a third zone of the chamber.
- the first zone includes space above and beside the chuck.
- the second zone includes space beside the first x-y translation stage.
- the third zone includes space beside the second x-y translation stage.
- the first x-y translation stage With the substrate mounted on the chuck in the chamber, the first x-y translation stage is translated to a first position. With the first x-y translation stage translated to the first position, the second x-y translation stage is translated to scan a first portion of the substrate.
- a method includes coupling a first x-y translation stage to a second x-y translation stage, such that the second x-y translation stage is disposed above the first x-y translation stage.
- a chuck configured to support a substrate is coupled to the second x-y translation stage, such that the chuck is disposed above the second x-y translation stage.
- the chuck, first x-y translation stage, and second x-y translation stage are installed in a chamber.
- a first barrier, coupled to the first x-y translation stage, is installed to separate a first zone of the chamber from a second zone of the chamber.
- a second barrier coupled to the second x-y translation stage, is installed to separate the first zone of the chamber from a third zone of the chamber.
- the first zone includes space above and beside the chuck.
- the second zone includes space beside the first x-y translation stage.
- the third zone includes space beside the second x-y translation stage.
- Figure 1 is a cross-sectional view of a chamber that contains a multi-stage, multizone substrate-positioning system with bellows, in accordance with some embodiments.
- Figure 2 is a cross-sectional view of a chamber that contains a multi-stage, multizone substrate-positioning system with a z stage and bellows, in accordance with some embodiments.
- Figure 3 is a plan view of a chuck surrounded by bellows, in accordance with some embodiments.
- Figure 4 is a cross-sectional view of a chamber that contains a multi-stage, multizone substrate-positioning system with bellows that each include two connected sequences of concertinaed sides, in accordance with some embodiments.
- Figure 5 is a cross-sectional view of a chamber that contains a multi-stage, multizone substrate-positioning system with partially overlapping plates, in accordance with some embodiments.
- Figure 6 is a cross-sectional view of a chamber that contains a multi-stage, multizone substrate-positioning system with a z stage and partially overlapping plates, in accordance with some embodiments.
- Figure 7 is a cross-sectional view of a vacuum chamber with an inspection-tool head and a multi-stage, multi-zone substrate-positioning system with bellows, in accordance with some embodiments.
- Figure 8 is a cross-sectional view of a vacuum chamber with an inspection-tool head and a multi-stage, multi-zone substrate-positioning system with plates, in accordance with some embodiments.
- Figure 9 is a cross-sectional view of a chamber configured to operate at atmospheric pressure and containing a multi-stage, multi-zone substrate-positioning system with bellows, in accordance with some embodiments.
- Figure 10 is a cross-sectional view of a chamber configured to operate at atmospheric pressure and containing a multi-stage, multi-zone substrate-positioning system with plates, in accordance with some embodiments.
- Figure 1 1 shows a map of a semiconductor wafer with stations for a linear actuator, in accordance with some embodiments.
- Figure 12 is a flowchart showing a substrate-positioning method in accordance with some embodiments.
- Figure 13 is a flowchart showing a method of fabricating a substrate-positioning system in accordance with some embodiments
- Figure 14 is a block diagram of a system (e.g., an inspection system) that performs translation of a substrate in accordance with some embodiments.
- a system e.g., an inspection system
- Figure 1 is a cross-sectional view of a chamber 102 that contains a multi-stage, multi-zone substrate-positioning system in accordance with some embodiments.
- the substrate- positioning system includes a first x-y translation stage 104, a second x-y translation stage 106, and a chuck 108.
- the second x-y translation stage 106 is situated above and coupled to (e.g., directly connected to) the first x-y translation stage 104.
- the first x-y translation stage 104 is also referred to as the lower stage or lower platform, and the second x-y translation stage 106 is also referred to as the upper stage or upper platform.
- the chuck 108 is situated above and coupled to (e.g., directly connected to) the second x-y translation stage 106. In the example of Figure 1, the chuck 108 is thus coupled to the first x-y translation stage 104 through the second x-y translation stage 106.
- the chuck 108 is configured to support a substrate 1 10 (e.g., a semiconductor wafer or reticle).
- the chamber 102 is part of an inspection system for inspecting substrates 1 10.
- a substrate 1 10 may be mounted on the chuck 108, inspected, and then removed from the chamber 102.
- the first x-y translation stage 104 and second x-y translation stage 106 translate the chuck 108 and substrate 1 10 during the inspection process.
- the first x-y translation stage 104 and/or second x-y translation stage 106 use air bearings or mechanical bearings or are flexure-based.
- the first x-y translation stage 104 and second x-y translation stage 106 move in the x-y plane (i.e., in x- and y-directions).
- the x-direction is horizontal
- the y- direction is perpendicular to the page (or vice-versa)
- the z-direction is vertical.
- the x- and y-directions are substantially parallel (e.g., to within manufacturing tolerances) to the surface of the chuck on which the substrate 1 10 is mounted (or is to be mounted, when the substrate 1 10 is not present). Movement of the first x-y translation stage 104 translates (i.e., moves) the second x-y translation stage 106 and the chuck 108.
- Movement of the second x-y translation stage 106 translates the chuck 108 but not the first x-y translation stage 104.
- the first x-y translation stage 104 may move while the second x-y translation stage 106 is stationary relative to the first x-y translation stage 104.
- the second x-y translation stage 106 may move while the first x-y translation stage 104 is stationary.
- the travel for scanning the entire substrate 1 10 is split between the first x-y translation stage 104 and the second x-y translation stage 106.
- the first x-y translation stage 104 is configured to provide a first amount of travel (i.e., has a first maximum amount of travel) that is insufficient to scan the entire substrate 1 10.
- the second x-y translation stage 106 is configured to provide a second amount of travel (i.e., has a second maximum amount of travel) that is also insufficient to scan the entire substrate 110.
- the first and second amounts of travel together are sufficient to scan the entire substrate 110: added together, they equal or exceed the amount of travel needed to scan the entire substrate 110.
- the first amount of travel and the second amount of travel may each be equal to half of the amount of travel needed to scan the entire substrate 1 10.
- the substrate 1 10 is a semiconductor wafer
- the first amount of travel and the second amount of travel are each plus and minus one fourth of the wafer diameter in both the x- and y-directions.
- the semiconductor wafer is a 300 mm wafer (i.e., has a 300 mm diameter) in this example
- the first amount of travel is ⁇ 75 mm in the x-direction and ⁇ 75 mm in the y-direction
- the second amount of travel is ⁇ 75 mm in the x-direction and ⁇ 75 mm in the y-direction.
- the first amount of travel and the second amount of travel are not each equal to half of the amount of travel needed to scan the entire substrate 1 10.
- the first amount of travel may be greater than half (e.g., 70%) of the amount of travel needed to scan the entire substrate 1 10 and the second amount of travel may be less than half (e.g., 30%) of the amount of travel needed to scan the entire substrate 110.
- the first x-y translation stage 104 is heavier than the second x-y translation stage 106.
- the first x-y translation stage 104 may be 70-80 kg while the second x-y translation stage 106 may be 2-15 kg (e.g., 10-15 kg, or 2-10 kg, or 2-3 kg). Decreasing the weight of the second x-y translation stage 106 increases speed, reduces stopping time, and reduces settling time during which vibrations attenuate for the second x-y translation stage 106.
- Weight of the second x-y translation stage 106 may be traded off against the second amount of travel: the weight of the second x-y translation stage 106 may be reduced by reducing the second amount of travel and increasing the first amount of travel accordingly, so that the entire substrate 110 can still be scanned.
- the second amount of travel may be less than half the amount of travel needed to scan the entire substrate 1 10
- the first amount of travel may be more than half the amount of travel needed to scan the entire substrate
- first bellows 1 12 is coupled to (e.g., directly connected to) the first x-y translation stage 104.
- Second bellows 1 14 is coupled to (e.g., directly connected to) the second x-y translation stage 106.
- the first bellows 112 may be coupled between the first x-y translation stage 104 and a wall of the chamber 102 (e.g., an interior surface extending around the inside of the chamber 102).
- the second bellows 114 may be coupled between the second x-y translation stage 106 (e.g., an outer side surface of the second x-y translation stage 106) and the first x-y translation stage 104 (e.g., a comer or top surface of the first x-y translation stage 104).
- the first bellows 112 is a first barrier that separates a first zone 1 16 of the chamber 102 from a second zone 118 of the chamber 102.
- the second bellows 114 is a second barrier that separates the first zone 1 16 of the chamber 102 from a third zone 120 of the chamber 102.
- the first bellows 112 and second bellows 114 may be stainless steel.
- the first bellows 112 and second bellows 1 14 act as respective flexible skirts around the first x-y translation stage 104 and the second x-y translation stage 106 to separate the zones 116, 118, and 120.
- the first zone 116 includes space above and beside the chuck 108
- the second zone 118 includes space beside the first x-y translation stage 104
- the third zone 120 includes space beside the second x-y translation stage 106.
- the flexibility of the bellows 112 and 1 14, which results from their concertinaed sides, allows portions of the bellows 112 and 114 to compress and expand in the x-y plane to accommodate respective travel of the first x-y translation stage 104 and the second x-y translation stage 106.
- This travel and accompanying deformation of the bellows 1 12 and 1 14 changes the shapes and locations of the zones 116, 118, and 120 accordingly.
- the bellows 1 12 and 1 14 are considered two-dimensional (2D) bellows, because they accommodate two-dimensional motion (i.e., in the x-y plane) of the first and second x-y translations stages 104 and 106.
- the substrate-positioning system of the chamber 102 also includes a z stage that moves the chuck 108 and substrate 1 10 in the z-direction (i.e., vertically up and down).
- Figure 2 is a cross-sectional view of the chamber 102 with a substrate-positioning system that includes a z stage 122 in addition to the components of Figure 1.
- the z stage 122 may be coupled between the first x-y translation stage 104 and the second x-y translation stage 106.
- the chuck 108 thus may be coupled to the first x-y translation stage 104 through the second x-y translation stage 106 and the z stage 122.
- the z-stage 122 moves the second x-y translation stage 106, chuck 108, and substrate 1 10 (assuming the substrate 110 is mounted on the chuck 108) up and down, but does not move the first x-y translation stage 104. Movement of the first x-y translation stage 104 translates the z stage 122 as well as the second x-y translation stage 106, chuck 108, and substrate 110 (assuming the substrate 1 10 is mounted on the chuck 108).
- Figure 3 is a plan view of a chuck 300 surrounded by bellows 302, in accordance with some embodiments.
- the chuck 300 which is an example of the chuck 108 ( Figures I -2), is mounted on a second x-y translation stage 106 ( Figures 1-2), which is not visible in Figure 3 because it is obscured by the chuck 300.
- the bellows 302 is an example of bellows 1 14 ( Figures 1-2).
- the inner circumference of the bellows 302 is connected to the side of the second x-y translation stage 106 and the outer circumference of the bellows 302 is connected to the first x-y translation stage 104 (not shown).
- the chuck 300 has been translated from a center position to a position that is offset to the lower-right side of Figure 3.
- the lower-right portion of the bellows 302 has compressed accordingly, while the upper-left portion of the bellows 302 has expanded accordingly.
- the chuck 300 is circular.
- the bellows 302 are circular, 2D bellows.
- the chuck 300 and bellows 302 may have different shapes.
- the chuck 300 may be rectangular (e.g., with a recessed circular surface to receive a semiconductor wafer) and the bellows 302 may be rectangular, 2D bellows.
- the bellows 112 ( Figures 1-2) may be circular 2D bellows or rectangular 2D bellows.
- the bellows 112 and 114 each include a single sequence of concertinaed sides, as shown in Figures 1-2. Alternatively, each bellows may be implemented using two connected sequences of concertinaed sides.
- Figure 4 is a cross-sectional view of the chamber 102 in which the bellows 112 and 114 are replaced with respective bellows 400 and 406, each of which includes two connected sequences of concertinaed sides, in accordance with some embodiments.
- the bellows 400 which are coupled to (e.g., directly connected to) the first x-y translation stage 104, includes a first sequence 402 of concertinaed sides connected to a second sequence 404 of concertinaed sides.
- the sequences 402 and 404 are arranged in series between the first x-y translation stage 104 and a wall of the chamber 102 (e.g., an interior surface extending around the inside of the chamber 102).
- the first sequence 402 extends downward from its point of coupling with the first x-y translation stage 104 to the point at which it connects to the second sequence 404.
- the second sequence 404 extends upward from the point at which it connects to the first sequence 402 to its point of coupling with the wall of the chamber 102.
- the sequences 408 and 410 are arranged in series between the second x-y translation stage 106 and a plate 412 that extends vertically from the first x-y translation stage 104 (e.g., from a top surface or corner of the first x- y translation stage 104).
- the first sequence 408 extends downward from its point of coupling with the second x-y translation stage 106 to the point at which it connects to the second sequence 410.
- the second sequence 410 extends upward from the point at which it connects to the first sequence 408 to its point of coupling with the plate 412 (e.g., to the far end of the plate 412).
- the dual-sequence configuration of the bellows 400 and 406 provides low friction and therefore reduces the force used to move the first and second x-y translation stages 104 and 106.
- the bellows 400 and 406, like the bellows 1 12 and 114, are 2D bellows: they accommodate two-dimensional motion (i.e., in the x-y plane) of the first and second x-y translations stages 104 and 106
- Bellows are one type of barrier that may be used to separate the zones 1 16, 1 18, and 120.
- partially overlapping plates separated by a narrow gap are used.
- Figure 5 is a cross-sectional view of the chamber 102 in which pairs of partially overlapping plates serve as respective first and second barriers 500 and 506 that separate the zones 116, 118, and 120.
- the first barrier 500 includes a plate 502 that extends from the first x-y translation stage 104 and a plate 504 that partially overlaps with the plate 502 (i.e., a portion of the plate 504 overlaps a portion of the plate 502) and is separated from the plate 502 by a gap 505.
- the second barrier 506 includes a plate 508 that extends from the second x-y translation stage 106 and a plate 510 that partially overlaps with the plate 508 (i.e., a portion of the plate 510 overlaps a portion of the plate 508) and is separated from the plate 508 by a gap 512.
- the plate 504 is connected to a wall of the chamber 102 (e.g., an interior surface extending around the inside of the chamber 102).
- the plate 510 is connected to (e.g., extends from) the first x-y translation stage 104 (e.g., a top surface or comer of the first x-y translation stage 104).
- the plate 510 may be bent or curved to accommodate this connection.
- the gaps 505 and 512 are in the range of 0.5-1.0 mm wide (i.e., the distance between the overlapping portions of respective plates is 0.5- 1.0 mm).
- the plates 502, 504, 508, and 510 may be stainless steel.
- a z stage 122 is also present (e.g., coupled between the first x-y translation stage 104 and the second x-y translation stage 106, as shown in Figure 6 in accordance with some embodiments.)
- a substrate-positioning system may use bellows 1 12 or 400 as a first barrier and plates 506 as a second barrier. In some embodiments, a substrate- positioning system may use plates 500 as a first barrier and bellows 114 or 406 as a second barrier.
- the chamber 102 is a vacuum chamber (e.g., for an electron microscope, such as a SEM).
- Figure 7 and 8 are cross-sectional views of a vacuum chamber 702 in accordance with some embodiments.
- the vacuum chamber 702, which is an example of the chamber 102, includes the first and second x-y translation stages 104 and 106 and chuck 108, and also includes an inspection-tool head 704 (e.g., an electron-microscope head, such as a SEM head) that extends into the vacuum chamber 702. (A substrate 110 is not shown in Figure 7 but may be present.
- an inspection-tool head 704 e.g., an electron-microscope head, such as a SEM head
- the vacuum chamber 702 optionally also includes a z stage, such as the z stage 122, Figures 2 and 6.)
- the chuck 108 is positioned beneath the head 704.
- a substrate 1 10 mounted on the chuck 108 may be scanned beneath the head 704 by moving the first and second x-y translation stages 104 and 106, thus allowing inspection of the substrate 1 10.
- bellows 112 and 114 separate the first zone 1 16 from the second and third zones 118 and 120.
- plates 500 and 506 separate the first zone 116 from the second and third zones 1 18 and 120.
- One or more vacuum pumps 706 are connected to the first zone 116 to provide a vacuum in the first zone 1 16.
- One or more vacuum pumps 708 are connected to the second and third zones 1 18 and 120 to provide a vacuum in the second and third zones 118 and 120.
- the second zone 118 may be connected to the third zone 120 through one or more passages 710 (e.g., an opening or tubing) in the first x-y translation stage 104 to allow the pump(s) 708 to pump down the third zone 120 as well as the second zone 1 18.
- the pump(s) 706 provide an ultra-high vacuum (UHV) in the first zone 1 16, while the pump(s) 708 provide a lower (i.e., higher pressure) vacuum (e.g., a technical vacuum that is lower than, and thus has higher pressure than, UHV) in the second and third zones 1 18 and 120.
- UHV is a standard, well-known technical term that refers to vacuums with a pressure on the order of 10 -9 torr or lower.
- the pump(s) 708 may provide a technical vacuum on the order of 10 -3 torr in the second and third zones 118 and 120.
- a vacuum on the order of 10' 12 torr may be achieved in the first zone 116.
- Motion of the first and second x-y translation stages 104 and 106 generates heat.
- flexible tubing 712 is disposed in the second zone 1 18 to provide liquid coolant (e.g., water) to the first x-y translation stage 104 to cool the stage.
- the tubing 712 may extend to the second x-y translation stage 106 to cool that stage as well.
- the tubing may be polymer-based (e.g., plastic).
- barriers e.g., bellows 1 12 and 1 14, Figure 7, or plates 500 and 506, Figure 8 prevent this outgassing from degrading the vacuum in the first zone 1 16 and from contaminating the substrate 1 10 and head 704.
- the chamber 102 operates at atmospheric pressure.
- Figures 9 and 10 are cross-sectional views of a chamber 902 configured to operate at
- the chamber 902 is part of an optical inspection system for optically inspecting substrates 1 10.
- the chamber 902 which is an example of the chamber 102, includes the first and second x-y translation stages 104 and 106 and chuck 108. (A substrate 1 10 is not shown in Figure 9 but may be present.
- the chamber 902 optionally also includes a z stage, such as the z stage 122, Figures 2 and 6.)
- bellows 112 and 114 separate the first zone 1 16 from the second and third zones 1 18 and 120.
- plates 500 and 506 separate the first zone 1 16 from the second and third zones 1 18 and 120.
- the first zone 1 16 is connected to a purge inlet line 904 to introduce gas into the first zone 1 16 during operation and a purge exhaust line 906 to vent the gas from the first zone 116 during operation.
- the gas may be substantially oxygen-free (e.g., to within purification capability), causing the first zone 116 to be substantially oxygen-free (e.g., at atmospheric pressure) during operation, while oxygen may be present in the second and third zones 1 18 and 120 during operation (e.g., with the second and third zones 1 18 and 120 at atmospheric pressure).
- the gas is N 2 .
- the first zone 116 may be configured for nitrogen purge at atmospheric pressure during operation, and the second and third zones 118 and 120 may be configured to be at atmospheric pressure during operation.
- the first x-y translation stage 104 includes (e.g., is implemented as) a linear actuator configured to travel between specified stations.
- the stations are predefined before a substrate 1 10 is loaded onto the chuck 108, in accordance with some embodiments.
- Figure 1 1 shows a map of a semiconductor wafer 1 100 with four stations 1 102 (the center of the wafer may be a fifth station), in accordance with some embodiments.
- the semiconductor wafer 1 100 is an example of a substrate 1 10.
- the four stations 1 102 are centers of respective quarters 1 101 into which the semiconductor wafer 1100 is divided.
- the first x-y translation stage 104 is configured for travel 1 104 from the center of the wafer to the stations 1 102 and/or between the stations 1 102.
- the travel 1 104 causes the wafer 1 100 to move from being centered beneath a head 704 to having a station 1 102 centered beneath the head 704, or from having one station 1 102 centered beneath the head 704 to having another station centered beneath the head 704.
- the second x-y translation stage 106 is configured for travel 1 106 across the respective quarter 1 101 (e.g., continuously back and forth across the quarter 1 101 ) to scan the quarter (e.g., such that the entire quarter 1 101 passes beneath the head 704).
- the second x-y translation stage 106 is thus configured to provide travel to scan respective quarters 1 101 of the semiconductor wafer 1 100 with the linear actuator situated at respective stations 1 102, in accordance with some embodiments.
- the arrangement of stations 1 102 shown in Figure 1 1 is merely one possible arrangement; other arrangements and numbers of stations are possible.
- the use of a linear actuator simplifies the design of the first x-y translation stage 104 and reduces its weight and cost.
- FIG. 12 is a flowchart showing a substrate-positioning method 1200 in accordance with some embodiments.
- a substrate 1 10 is mounted (1202) on a chuck 108 to be translated in a chamber 102 (e.g., chamber 702, Figures 7-8; chamber 902, Figures 9-10) by a first x-y translation stage 104 and a second x-y translation stage 106.
- the second x-y translation stage 106 is situated above and coupled to the first x-y translation stage 104.
- the chuck 108 is situated above and coupled to the second x-y translation stage 106.
- a first barrier is coupled to the first x-y translation stage 104 to separate a first zone 1 16 of the chamber 102 from a second zone 1 18 of the chamber 102.
- the first zone 1 16 includes space above and beside the chuck 108 and the second zone 1 18 includes space beside the first x-y translation stage 104.
- a second barrier is coupled to the second x-y translation stage 106 to separate the first zone 1 16 of the chamber 102 from a third zone 120 of the chamber 102.
- the third zone 120 includes space beside the second x-y translation stage 106.
- the first barrier includes (1204) first bellows (e.g., bellows).
- the second barrier includes (1204) second bellows (e.g., bellows 1 14, 302, or 406) coupled between the second x-y translation stage 106 and the first x-y translation stage 104.
- second bellows e.g., bellows 1 14, 302, or 406
- the first barrier includes (1208) a first plate 502 extending from the first x-y translation stage 104 and a second plate 504 having a portion that overlaps a portion of the first plate 502 and is separated from the first plate 502 by a first gap 505.
- the second barrier includes (1208) a third plate 508 extending from the second x-y translation stage 106 and a fourth plate 510 having a portion that overlaps a portion of the third plate 508 and is separated from the third plate 508 by a second gap 512.
- the first zone 1 16 is pumped (1208) to provide UHV (e.g., by vacuum pump(s) 706, Figures 7-8).
- the second and third zones 1 18 and 120 are pumped
- the first zone 1 16 is nitrogen-purged (1210) at atmospheric pressure (e.g., using purge lines 904 and 906, Figures 9-10).
- the second zone 118 and the third zone 120 are maintained (1210) at atmospheric pressure.
- the first x-y translation stage 104 is translated (1212) (e.g., with travel 1 104, Figure 1 1) to a respective position (e.g., a first position, a second position, etc.) (e.g., a respective station 1 102, Figure 11) of a plurality of positions.
- a respective position e.g., a first position, a second position, etc.
- the second x-y translation stage 106 is translated (1214) (e.g., with travel 1106, Figure 11) to scan a respective portion of the substrate 1 10.
- Steps 1212 and 1214 are repeated for another position (e.g., another station 1 102, Figure 11) of the plurality of positions if there are remaining positions of the plurality of positions to which the first x-y translation stage 104 has not yet been translated (1216-Yes). Accordingly, the first x-y translation stage 104 is translated to respective positions of a plurality of positions. With the first x-y translation stage 104 translated to each position of the plurality of positions, the second x-y translation stage 106 is translated to scan a respective portion of the substrate 110. Once the first x-y translation stage 104 has been translated to every position of the plurality of positions (1216-No), and the substrate 110 has been scanned accordingly, the substrate 110 is unloaded (1218) from the chamber 102.
- another position e.g., another station 1 102, Figure 11
- the method 1300 includes a number of operations that are shown in a specific order, the method 1300 can include more or fewer operations. Operations may overlap and two or more operations may be combined into a single operation. For example, step 1208 or 1210 may be performed throughout the method 1200.
- Figure 13 is a flowchart showing a method 1300 of fabricating a substratepositioning system in accordance with some embodiments.
- a first x-y translation stage 104 is coupled (1302) to a second x-y translation stage 106, such that the second x-y translation stage 106 is disposed above the first x-y translation stage 104.
- a chuck 108 is coupled (1304) to the second x-y translation stage 106, such that the chuck 108 is disposed above the second x-y translation stage 106.
- the chuck 108 is configured to support a substrate 110.
- the chuck 108, first x-y translation stage 104, and second x-y translation stage 106 are installed (1306) in a chamber 102.
- a first barrier coupled to the first x-y translation stage 104, is installed (1308) to separate a first zone 1 16 of the chamber 102 from a second zone 1 18 of the chamber 102.
- the first zone 116 includes space above and beside the chuck 108.
- the second zone 1 18 includes space beside the first x-y translation stage 104.
- the first barrier includes (1310) first bellows (e.g., bellows 1 12 or 400) coupled between the first x-y translation stage 104 and a wall of the chamber 102.
- the first barrier includes (1312) a first plate 502 extending from the first x-y translation stage 104 and a second plate 504 having a portion that overlaps a portion of the first plate 502 and is separated from the first plate 502 by a first gap 505.
- a second barrier coupled to the second x-y translation stage 106, is installed
- the third zone 120 includes space beside the second x-y translation stage 106.
- the second barrier includes (1316) second bellows (e.g., bellows 1 14, 302, or 406) coupled between the second x-y translation stage 106 and the first x-y translation stage 104.
- the second barrier includes ( 1318) a third plate 508 extending from the second x-y translation stage 106 and a fourth plate 510 having a portion that overlaps a portion of the third plate 508 and is separated from the third plate 508 by a second gap 512.
- the method 1300 includes a number of operations that are shown in a specific order, the method 1300 can include more or fewer operations.
- An order of two or more operations may be changed or may overlap and two or more operations may be combined into a single operation.
- the chuck 108, first x-y translation stage 104, and/or second x-y translation stage 106 may be coupled together as they are installed in the chamber 102.
- Figure 14 is a block diagram of a system 1400 that performs translation of a substrate 1 10 in accordance with some embodiments.
- the system 1400 is an inspection system for inspecting substrates 110.
- the system 1400 may be a semiconductor-wafer inspection system or a reticle inspection system.
- the system 1400 includes a tool 1430 (e.g., a substrate inspection tool) that includes a multi-stage substrate-positioning system in a chamber 102 (e.g., chamber 702, Figures 7-8; chamber 902, Figures 9-10).
- the multi-stage substrate-positioning system includes a first x-y translation stage 104, a second x-y translation stage 106, and a chuck 108, and may include a z translation stage 122.
- the system 1400 also includes a computer system with one or more processors
- the computer system 1402 e.g., CPUs
- the computer system may be communicatively coupled with the tool 1430 through one or more networks 1440.
- the computer system may further include one or more network interfaces (wired and/or wireless, not shown) for communicating with the tool 1430 and/or remote computer systems.
- the user interfaces 1410 may include a display 1407 and one or more input devices 1408 (e.g., a keyboard, mouse, touch-sensitive surface of the display 1407, etc.).
- the display 1407 may display results generated by the system 1400 (e.g., substrate-inspection results).
- Memory 1410 includes volatile and/or non-volatile memory.
- Memory 1410 (e.g., the non-volatile memory within memory 1410) includes a non-transitory computer-readable storage medium.
- Memory 1410 optionally includes one or more storage devices remotely located from the processors 1402 and/or a non-transitory computer-readable storage medium that is removably inserted into the system 1400.
- memory 1410 (e.g., the non- transitory computer-readable storage medium of memory 1410) stores the following modules and data, or a subset or superset thereof: an operating system 1412 that includes procedures for handling various basic system services and for performing hardware-dependent tasks, an inspection module 1414 for inspecting substrates 110, a translation module 1416 for translating substrates 110 (e.g., during inspection), and a reporting module 1418 for reporting results (e.g., inspection results).
- the memory 1410 (e.g., the non-transitory computer-readable storage medium of the memory 1410) may include instructions for performing all or a portion of the method 1200 ( Figure 12). Each of the modules stored in the memory 1410 corresponds to a set of instructions for performing one or more functions described herein.
- modules need not be implemented as separate software programs.
- the modules and various subsets of the modules may be combined or otherwise re-arranged.
- the inspection module 1414 and translation module 1416 may be combined.
- the memory 1410 stores a subset or superset of the modules and/or data structures identified above.
- Figure 14 is intended more as a functional description of various features that may be present in the system 1400 than as a structural schematic.
- the functionality of the computer system in the system 1400 may be split between multiple devices.
- a portion of the modules stored in the memory 1410 may alternatively be stored in one or more other computer systems communicatively coupled with the computer system of the system 1400 through one or more networks.
- use of a substrate-positioning system as described herein e.g., as fabricated in accordance with the method 1400 and/or operated in accordance with the method 1300
- a move-acquire-measure (MAM) time of 30-40 ms for a travel distance of 10-20 mm with nanometer-level settling stability.
- the second x-y translation stage 106 provides 1-5 mm of travel in 20 ms.
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Environmental & Geological Engineering (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Electron Beam Exposure (AREA)
Abstract
Description
Claims
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020227001526A KR20220024615A (en) | 2019-06-18 | 2020-06-17 | Multi-stage, multi-zone substrate positioning system |
EP20826672.6A EP3984057A4 (en) | 2019-06-18 | 2020-06-17 | Multi-stage, multi-zone substrate-positioning systems |
JP2021575499A JP2022537379A (en) | 2019-06-18 | 2020-06-17 | Multi-stage multi-zone substrate positioning system |
CN202080040851.2A CN113939902A (en) | 2019-06-18 | 2020-06-17 | Multi-stage, multi-zone substrate positioning system |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201962862895P | 2019-06-18 | 2019-06-18 | |
US62/862,895 | 2019-06-18 | ||
US16/900,039 US11637030B2 (en) | 2019-06-18 | 2020-06-12 | Multi-stage, multi-zone substrate positioning systems |
US16/900,039 | 2020-06-12 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2020257223A1 true WO2020257223A1 (en) | 2020-12-24 |
Family
ID=74037719
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2020/038042 WO2020257223A1 (en) | 2019-06-18 | 2020-06-17 | Multi-stage, multi-zone substrate-positioning systems |
Country Status (7)
Country | Link |
---|---|
US (1) | US11637030B2 (en) |
EP (1) | EP3984057A4 (en) |
JP (1) | JP2022537379A (en) |
KR (1) | KR20220024615A (en) |
CN (1) | CN113939902A (en) |
TW (1) | TWI827852B (en) |
WO (1) | WO2020257223A1 (en) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11443973B2 (en) | 2019-07-12 | 2022-09-13 | Applied Materials, Inc. | Robot for simultaneous substrate transfer |
JP2022540608A (en) | 2019-07-12 | 2022-09-16 | アプライド マテリアルズ インコーポレイテッド | Simultaneous substrate transfer robot |
US11574826B2 (en) | 2019-07-12 | 2023-02-07 | Applied Materials, Inc. | High-density substrate processing systems and methods |
CN114072897A (en) | 2019-07-12 | 2022-02-18 | 应用材料公司 | Robot for simultaneous substrate transfer |
US11117265B2 (en) | 2019-07-12 | 2021-09-14 | Applied Materials, Inc. | Robot for simultaneous substrate transfer |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6183564B1 (en) * | 1998-11-12 | 2001-02-06 | Tokyo Electron Limited | Buffer chamber for integrating physical and chemical vapor deposition chambers together in a processing system |
US6597433B1 (en) | 1999-04-19 | 2003-07-22 | Asml Netherlands B.V. | Multi-stage drive arrangements and their application in lithographic projection apparatuses |
KR20080052956A (en) * | 2006-12-08 | 2008-06-12 | 도쿄엘렉트론가부시키가이샤 | Apparatus for thermal and plasma enhanced vapor deposition and method of operating |
WO2008121561A1 (en) * | 2007-03-20 | 2008-10-09 | Kla-Tencor Corporation | Stabilizing a substrate using a vacuum preload air bearing chuck |
US7642523B1 (en) * | 2006-05-02 | 2010-01-05 | New Way Machine Components, Inc. | Vacuum chamber stage with application of vacuum from below |
US20100043214A1 (en) * | 2008-08-19 | 2010-02-25 | Silverbrook Research Pty Ltd | Integrated circuit dice pick and lift head |
US20130342827A1 (en) | 2011-09-06 | 2013-12-26 | Kla-Tencor Corporation | Linear Stage and Metrology Architecture for Reflective Electron Beam Lithography |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0793348B2 (en) | 1989-05-19 | 1995-10-09 | アプライド マテリアルズ インコーポレーテッド | Multi-chamber vacuum processing apparatus and multi-chamber vacuum semiconductor wafer processing apparatus |
JPH0778098A (en) * | 1993-09-08 | 1995-03-20 | Fujitsu Ltd | File management system |
US6048154A (en) | 1996-10-02 | 2000-04-11 | Applied Materials, Inc. | High vacuum dual stage load lock and method for loading and unloading wafers using a high vacuum dual stage load lock |
WO2002037526A1 (en) | 2000-11-02 | 2002-05-10 | Ebara Corporation | Electron beam apparatus and method for manufacturing semiconductor device comprising the apparatus |
US6710354B1 (en) | 2001-12-11 | 2004-03-23 | Kla-Tencor Corporation | Scanning electron microscope architecture and related material handling system |
US7119566B2 (en) * | 2002-03-22 | 2006-10-10 | Electro Scientific Industries, Inc. | Test probe alignment apparatus |
JP2005046941A (en) * | 2003-07-31 | 2005-02-24 | Canon Inc | Stage device with cable jogging unit |
US20070269297A1 (en) | 2003-11-10 | 2007-11-22 | Meulen Peter V D | Semiconductor wafer handling and transport |
JP2006344739A (en) * | 2005-06-08 | 2006-12-21 | Canon Inc | Position measuring device and its method |
JP4871027B2 (en) | 2006-05-29 | 2012-02-08 | 株式会社日立ハイテクノロジーズ | Sample mounting stage, XY stage, and charged particle beam apparatus |
NL2005126A (en) * | 2009-09-21 | 2011-03-22 | Asml Netherlands Bv | Lithographic apparatus, coverplate and device manufacturing method. |
TWI436831B (en) | 2009-12-10 | 2014-05-11 | Orbotech Lt Solar Llc | A showerhead assembly for vacuum processing apparatus |
US9302358B2 (en) | 2011-01-18 | 2016-04-05 | Applied Materials Israel, Ltd. | Chamber elements and a method for placing a chamber at a load position |
WO2014141775A1 (en) * | 2013-03-15 | 2014-09-18 | 株式会社 日立ハイテクノロジーズ | Charged particle radiation apparatus |
US9587749B2 (en) | 2013-08-12 | 2017-03-07 | Applied Materials Israel, Ltd. | Slit valve with a pressurized gas bearing |
JP6908999B2 (en) | 2013-08-12 | 2021-07-28 | アプライド マテリアルズ イスラエル リミテッド | Systems and methods for forming sealed chambers |
WO2015081072A1 (en) | 2013-11-26 | 2015-06-04 | Applied Materials Israel, Ltd. | System and method for forming a sealed chamber |
WO2018154706A1 (en) * | 2017-02-24 | 2018-08-30 | 株式会社 日立ハイテクノロジーズ | Charged-particle beam device |
-
2020
- 2020-06-12 US US16/900,039 patent/US11637030B2/en active Active
- 2020-06-17 JP JP2021575499A patent/JP2022537379A/en active Pending
- 2020-06-17 WO PCT/US2020/038042 patent/WO2020257223A1/en unknown
- 2020-06-17 EP EP20826672.6A patent/EP3984057A4/en active Pending
- 2020-06-17 CN CN202080040851.2A patent/CN113939902A/en active Pending
- 2020-06-17 KR KR1020227001526A patent/KR20220024615A/en not_active Application Discontinuation
- 2020-06-17 TW TW109120477A patent/TWI827852B/en active
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6183564B1 (en) * | 1998-11-12 | 2001-02-06 | Tokyo Electron Limited | Buffer chamber for integrating physical and chemical vapor deposition chambers together in a processing system |
US6597433B1 (en) | 1999-04-19 | 2003-07-22 | Asml Netherlands B.V. | Multi-stage drive arrangements and their application in lithographic projection apparatuses |
US7642523B1 (en) * | 2006-05-02 | 2010-01-05 | New Way Machine Components, Inc. | Vacuum chamber stage with application of vacuum from below |
KR20080052956A (en) * | 2006-12-08 | 2008-06-12 | 도쿄엘렉트론가부시키가이샤 | Apparatus for thermal and plasma enhanced vapor deposition and method of operating |
WO2008121561A1 (en) * | 2007-03-20 | 2008-10-09 | Kla-Tencor Corporation | Stabilizing a substrate using a vacuum preload air bearing chuck |
US20100043214A1 (en) * | 2008-08-19 | 2010-02-25 | Silverbrook Research Pty Ltd | Integrated circuit dice pick and lift head |
US20130342827A1 (en) | 2011-09-06 | 2013-12-26 | Kla-Tencor Corporation | Linear Stage and Metrology Architecture for Reflective Electron Beam Lithography |
Non-Patent Citations (1)
Title |
---|
See also references of EP3984057A4 |
Also Published As
Publication number | Publication date |
---|---|
CN113939902A (en) | 2022-01-14 |
US11637030B2 (en) | 2023-04-25 |
EP3984057A1 (en) | 2022-04-20 |
JP2022537379A (en) | 2022-08-25 |
TW202111835A (en) | 2021-03-16 |
TWI827852B (en) | 2024-01-01 |
EP3984057A4 (en) | 2023-11-15 |
KR20220024615A (en) | 2022-03-03 |
US20200402827A1 (en) | 2020-12-24 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US11637030B2 (en) | Multi-stage, multi-zone substrate positioning systems | |
JP6220423B2 (en) | Inspection device | |
KR100267617B1 (en) | Vacuum process apparatus and vacuum processing method | |
JP5647327B2 (en) | Inspection apparatus using charged particle beam and device manufacturing method using the inspection apparatus | |
US9997328B2 (en) | System and method for forming a sealed chamber | |
US6899765B2 (en) | Chamber elements defining a movable internal chamber | |
JP5787331B2 (en) | Apparatus for transporting a substrate in a lithography system | |
US20050087300A1 (en) | Processed body carrying device, and processing system with carrying device | |
US7428850B2 (en) | Integrated in situ scanning electronic microscope review station in semiconductor wafers and photomasks optical inspection system | |
US8585112B2 (en) | Sample conveying mechanism | |
KR20150097565A (en) | Modular vertical furnace processing system | |
US10056274B2 (en) | System and method for forming a sealed chamber | |
US9302358B2 (en) | Chamber elements and a method for placing a chamber at a load position | |
US20150141225A1 (en) | Method and apparatus to support process tool modules in processing tools in a cleanspace fabricator | |
CN115428140A (en) | Semiconductor processing chamber with dual lift mechanism for edge ring height management | |
US6740889B1 (en) | Charged particle beam microscope with minicolumn | |
JP2019169593A (en) | Substrate transfer system | |
US9558975B2 (en) | System and method for transferring articles between vacuum and non-vacuum environments | |
CN216849847U (en) | Wafer scanning system | |
WO2024028194A1 (en) | High-throughput load lock chamber |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 20826672 Country of ref document: EP Kind code of ref document: A1 |
|
ENP | Entry into the national phase |
Ref document number: 2021575499 Country of ref document: JP Kind code of ref document: A |
|
NENP | Non-entry into the national phase |
Ref country code: DE |
|
ENP | Entry into the national phase |
Ref document number: 20227001526 Country of ref document: KR Kind code of ref document: A |
|
ENP | Entry into the national phase |
Ref document number: 2020826672 Country of ref document: EP Effective date: 20220111 |