WO2020253255A1

WO2020253255A1 - Display panel, preparation method therefor, and display device

Info

Publication number: WO2020253255A1
Application number: PCT/CN2020/076227
Authority: WO
Inventors: 于勇; 舒适; 岳阳; 黄海涛; 李翔; 徐传祥
Original assignee: 京东方科技集团股份有限公司
Priority date: 2019-06-19
Filing date: 2020-02-21
Publication date: 2020-12-24
Also published as: CN110148607B; CN110148607A

Abstract

A display panel, a preparation method therefor, and a display device, the display panel comprising: a driving backplane, the driving backplane comprising a base substrate (01) and a plurality of photoelectric converters (20) located on the base substrate (01); a plurality of light-emitting diode chips (30) located on the driving backplane; and a retaining wall (51) located on the driving backplane. The retaining wall (51) is located between adjacent light-emitting diode chips (30); the photoelectric converter (20) is located between adjacent light-emitting diode chips (30); and the photoelectric converter (20) is configured to detect the amount of exposure in a process of photolithography processing for manufacturing the retaining wall (51).

Description

Display panel, its preparation method and display device

Cross references to related applications

This application claims the priority of a Chinese patent application filed with the Chinese Patent Office on June 19, 2019, the application number is 201910532354.3, and the application name is "an LED display panel, its preparation method and display device", the entire content of which is incorporated by reference Incorporated in this application.

Technical field

The present disclosure relates to the field of display technology, in particular to a display panel, a preparation method thereof, and a display device.

Background technique

In the Mini Light Emitting Diode (Mini-LED) display panel, in order to improve the light extraction efficiency of the LED chips, a layer of high reflectivity barrier material can be formed around each LED chip, which can greatly reduce the light emission. At the same time, it can prevent color mixing between adjacent pixels.

However, since the high-reflectivity barrier wall materials are all solutions added with scattering particles, the concentration of the scattering particles is relatively high. Therefore, after the barrier wall material is coated, the uniformity of the scattering particle concentration in the film layer is poor, and the exposure process At this time, due to the scattering action of the scattering particles on the ultraviolet light, the exposure of the entire film layer will be uneven, resulting in inconsistent patterns of the retaining wall and affecting the light extraction efficiency.

Summary of the invention

The display panel provided by the embodiment of the present disclosure includes:

Drive backplane; The drive backplane includes: a base substrate, and a plurality of photoelectric converters located on the base substrate;

A plurality of light-emitting diode chips located on the driving backplane;

A retaining wall is located above the drive backplane; the retaining wall is located between the adjacent light-emitting diode chips;

The photoelectric converter is located between the adjacent light-emitting diode chips; the photoelectric converter is configured to detect the amount of exposure during the photolithography process of making the retaining wall.

Optionally, in the embodiment of the present disclosure, the orthographic projection of the photoelectric converter on the base substrate and the orthographic projection of the retaining wall on the base substrate overlap each other.

Optionally, in the embodiment of the present disclosure, the area of the barrier wall parallel to the cross section of the driving backplane increases as the distance from the surface of the driving backplane decreases.

Optionally, in the embodiment of the present disclosure, the display panel is divided into a plurality of detection areas; each of the detection areas is provided with one photoelectric converter.

Optionally, in the embodiment of the present disclosure, the photoelectric converter is provided at every position between two adjacent light-emitting diode chips.

Optionally, in an embodiment of the present disclosure, the photoelectric converter includes: a first electrode, a second electrode located on a side of the first electrode away from the base substrate, and a second electrode located between the first electrode and the base substrate. The photodiode between the second electrodes.

Optionally, in an embodiment of the present disclosure, the driving backplane further includes: a plurality of thin film transistors and a plurality of connection electrodes on the base substrate;

The drain electrode of the thin film transistor and the connection electrode are connected in a one-to-one correspondence;

The first electrode and the drain electrode of the thin film transistor are arranged in the same layer, and the second electrode and the connecting electrode are arranged in the same layer.

Optionally, in the embodiment of the present disclosure, the material of the barrier film layer is a negative photoresist material doped with scattering particles.

Optionally, in the embodiment of the present disclosure, the barrier wall surrounds each of the light emitting diode chips.

Optionally, in the embodiment of the present disclosure, it further includes: a protective layer covering the light emitting diode chip.

Correspondingly, embodiments of the present disclosure also provide a method for manufacturing the above-mentioned display panel, which includes:

Provide a driving backplane; the driving backplane includes: a base substrate, and a plurality of photoelectric converters located on the base substrate;

A plurality of light emitting diode chips are formed on the side of the driving backplane with the photoelectric converter, and the photoelectric converter is located between the adjacent light emitting diode chips;

The pattern of the barrier wall is formed on the side of the photoelectric converter away from the base substrate through a photolithography process, and during exposure, voltage is provided to each photoelectric converter, and the barrier wall is located according to the The output signal of the photoelectric converter compensates for the corresponding exposure at the position of the retaining wall.

Optionally, in the embodiment of the present disclosure, forming a pattern of a retaining wall on the side of the photoelectric converter away from the base substrate through a photolithography process specifically includes:

Forming a barrier film layer covering the light-emitting diode chip, wherein the material of the barrier film layer is a negative photoresist material doped with scattering particles;

Supply voltage to each of the photoelectric converters;

An exposure machine is used to expose the barrier film layer, and the exposure amount of the exposure machine is adjusted according to the output signal of the photoelectric converter, so that the difference between the output signal of each photoelectric converter and the reference signal is expected Set within

The barrier film layer is developed to form a pattern of barrier walls surrounding each of the light-emitting diode chips.

Optionally, in the embodiment of the present disclosure, a digital exposure machine is used to expose the barrier film layer.

Optionally, in the embodiment of the present disclosure, after the light emitting diode chip is formed on the side of the driving backplane with the photoelectric converter, the pattern of the barrier wall is formed above the photoelectric converter through a photolithography process Before, it also included:

A protective layer covering the light-emitting diode chip is formed.

Optionally, in the embodiment of the present disclosure, the forming a plurality of light-emitting diode chips on the side of the driving backplane with the photoelectric converter includes:

A light emitting diode chip is formed on the side of the driving backplane with the photoelectric converter by a transfer method.

Correspondingly, an embodiment of the present disclosure also provides a display device, which includes the above-mentioned display panel.

Description of the drawings

FIG. 1 is a schematic structural diagram of a display panel provided by an embodiment of the disclosure;

2 is a schematic top view of a display panel provided by an embodiment of the disclosure;

FIG. 3 is a flowchart of a manufacturing method of a display panel provided by an embodiment of the disclosure;

FIG. 4 is a flowchart of a pattern of forming a retaining wall in the manufacturing method provided by an embodiment of the disclosure;

5a to 5g are schematic diagrams of the corresponding structures after performing each step in the preparation method of the embodiment of the disclosure.

Detailed ways

In order to make the objectives, technical solutions and advantages of the present disclosure clearer, the present disclosure will be further described in detail below with reference to the accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of the present disclosure, rather than all of them. Based on the embodiments in the present disclosure, all other embodiments obtained by those of ordinary skill in the art without creative work shall fall within the protection scope of the present disclosure.

The shapes and sizes of the components in the drawings do not reflect the true proportions, and are only intended to illustrate the present disclosure.

The embodiment of the present disclosure provides a display panel, as shown in FIG. 1, including:

Drive backplane; The drive backplane includes: a base substrate 01, and a plurality of photoelectric converters 20 located on the base substrate 01;

A plurality of light-emitting diode chips 30 located on the driving backplane;

The retaining wall 51 is located above the driving backplane; the retaining wall 51 is located between the adjacent LED chips 30;

The photoelectric converter 20 is located between adjacent light emitting diode chips 30; the photoelectric converter 30 is configured to detect the amount of exposure during the photolithography process of making the barrier wall 51.

The display panel provided by the embodiment of the present disclosure has a plurality of photoelectric converters in the driving backplane. In the process of making the pattern of the barrier wall through the photolithography process, the voltage is provided to each photoelectric converter during the exposure process. The output signal of the photoelectric converter in the area can compensate for the exposure at the location of the barrier. The actual exposure of each area can be monitored by the photoelectric converter, so that the graphics of the barrier at each location can be kept consistent, so that each light is emitted. The light output efficiency of the diode chip is guaranteed to be consistent, and the light output uniformity of the display panel is improved.

1, a barrier wall 51 is provided between adjacent light-emitting diode chips 30. Due to the high reflectivity of the barrier wall, it can reflect the light emitted from the light-emitting diode chip to the surroundings, which can reduce the light loss of the light-emitting diode chip 30, and , Which can prevent color mixing between adjacent LED chips. In addition, the area of the cross section of the barrier wall 51 parallel to the drive backplane increases as the distance from the surface of the drive backplane decreases, as shown in FIG. 1, in the barrier wall 1 in the direction perpendicular to the base substrate 01 The shape of the cross section is a trapezoid, so that the light emitted from the light emitting diode chip 30 toward the surroundings can be reflected to emit toward the light emitting surface of the display panel, thereby improving the light energy utilization rate of the display panel.

Optionally, in the embodiment of the present disclosure, as shown in FIG. 1, the orthographic projection of the photoelectric converter 20 on the base substrate 01 and the orthographic projection of the retaining wall 51 on the base substrate 01 overlap each other.

By setting the photoelectric converter in the driving backplane, the actual exposure of each area can be monitored during the exposure process, and the exposure of each area can be compensated according to the actual exposure of each area to improve the barrier film layer Exposure uniformity. Setting the photoelectric converter 20 to overlap with the orthographic projection of the barrier wall 51 on the base substrate 01 can make the actual exposure detected by the photoelectric converter 20 closer to the actual exposure of the barrier 01 at the corresponding position. Make the compensation effect of the exposure better, and then make the exposure uniformity better.

In specific implementation, in the above-mentioned display panel provided by the embodiments of the present disclosure, the display panel is divided into a plurality of detection areas; each detection area is provided with a photoelectric converter. During the exposure process, the exposure of the detection area can be compensated according to the output signal of the photoelectric converter located in the detection area. Specifically, in order to make the exposure uniformity better, the detection areas in the display panel can be set to be uniform distributed.

Further, in the above-mentioned display panel provided by the embodiments of the present disclosure, a photoelectric converter is provided at a position between two adjacent light-emitting diode chips, so that the detection area in the display panel is denser, and each detection can be controlled to the greatest extent. The exposure of the area.

Specifically, in the above-mentioned display panel provided by an embodiment of the present disclosure, as shown in FIG. 1, the photoelectric converter 20 includes a first electrode 24, and a second electrode 25 located on the side of the first electrode 24 away from the base substrate 01, And a photodiode located between the first electrode 24 and the second electrode 25.

One end of the photodiode is electrically connected to the first electrode 24, and the other end is electrically connected to the second electrode 25. During the exposure process, voltage can be supplied to the first electrode 24 and the second electrode 25 to detect the position of the photoelectric converter 20 The actual exposure at the location.

The photoelectric converter 20 described above includes a photodiode, wherein the photodiode can convert the received optical signal into an electrical signal. The current External Quantum Efficiency (EQE) EQE of the photodiode at 400nm is about 40%, and the general photolithography process In the exposure, the ultraviolet band between the wavelengths of 365-435 is used, so the photodiode can be used as the photoelectric converter to monitor the exposure.

In specific implementation, as shown in Figure 1, the photodiode generally includes a P-type doped region 21, an intrinsic region 22 and an N-type doped region 23; the intrinsic region is silicon crystal or germanium crystal, and the N-type doped region It is a silicon crystal or germanium crystal doped with a small amount of impurity phosphorus element (or antimony element): the P-type doped region is a silicon crystal or germanium crystal doped with a small amount of impurity boron element (or indium element).

In specific implementation, in the above-mentioned display panel provided by the embodiment of the present disclosure, as shown in FIG. 1, the above-mentioned driving backplane may further include: a plurality of thin film transistors 10 and a plurality of connecting electrodes 18 on the base substrate 01 ；

The drain electrode 16 of the thin film transistor 10 and the connection electrode 18 are connected in a one-to-one correspondence;

The first electrode 24 and the drain electrode 16 of the thin film transistor 10 are arranged in the same layer, and the second electrode 25 and the connection electrode 18 are arranged in the same layer.

The above-mentioned connecting electrode 18 can be connected to the thin film transistor 10 and the corresponding light emitting diode chip 30, so that the light emitting diode chip 30 can be controlled to emit light through the thin film transistor 10 so as to realize screen display. The first electrode 24 and the drain electrode 16 of the thin film transistor 10 are arranged in the same layer. During the process, the first electrode 24 and the drain electrode 16 can be made by the same patterning process, which saves process steps and production costs. Similarly, the first The two electrodes 25 and the connecting electrode 18 can be manufactured by the same patterning process, which further saves process steps and manufacturing costs.

In specific implementation, as shown in FIG. 1, the driving backplane may also include a gate 11, a gate insulating layer 12, an active layer 13, an interlayer dielectric layer 14, and a source electrode 15 which are sequentially formed on the base substrate 01. , The source electrode 15 and the drain electrode 16 are arranged in the same layer.

In specific implementation, the thin film transistors in the driving backplane may be bottom-gate transistors or top-gate transistors, which is not limited herein.

Further, as shown in FIG. 1, the display panel further includes a passivation layer 17 covering the thin film transistor 10 and the photoelectric converter 20, and a planarization layer 19 covering the anode 18 and the second electrode 25, wherein the connecting electrode 18 and the second electrode The two electrodes 25 are located on the passivation layer 17, and the planarization layer 19 includes a through hole configured to electrically connect the light emitting diode chip 30 and the connection electrode 18.

Optionally, in the above-mentioned display panel provided by the embodiment of the present disclosure, the material of the barrier film layer is a negative photoresist material doped with scattering particles.

In specific implementation, in the above-mentioned display panel provided by the embodiments of the present disclosure, the barrier wall surrounds each light-emitting diode chip. In this way, the loss of light emitted from the light-emitting diode chip to the surroundings can be reduced and the light-emitting efficiency of the light-emitting diode chip can be improved.

Specifically, as shown in FIG. 2, the retaining wall 51 may be in a grid shape as a whole, and each opening of the grid surrounds a light emitting diode chip 30.

Further, the shape of the opening of the grid may be the same as the shape of the light emitting diode chip 30.

Optionally, in the above-mentioned display panel provided by the embodiment of the present disclosure, as shown in FIG. 1, it may further include a protective layer 40 covering the light-emitting diode chip 30.

In specific implementation, in the above-mentioned display panel provided by the embodiment of the present disclosure, as shown in FIG. 1, it may further include a protective cover 02 located on the side of the retaining wall 51 facing away from the photoelectric converter 20.

In a specific implementation, the protective cover plate may be a glass cover plate or a protective cover plate with a color filter layer, which is not limited here.

Based on the same inventive concept, the embodiments of the present disclosure also provide a manufacturing method of the above-mentioned display panel. For the implementation of the manufacturing method, refer to the above-mentioned embodiment of the display panel, and the repetition will not be repeated.

The manufacturing method of the above-mentioned display panel provided by the embodiment of the present disclosure, as shown in FIG. 3, includes:

S101: Provide a driving backplane; the driving backplane includes: a base substrate and a plurality of photoelectric converters located on the base substrate;

S102. A plurality of light emitting diode chips are formed on the side of the drive backplane with the photoelectric converter, and the photoelectric converters are located between adjacent light emitting diode chips;

S103. Form a barrier wall pattern on the side of the photoelectric converter away from the base substrate through a photolithography process, and provide voltage to each photoelectric converter during exposure, and according to the output signal of the photoelectric converter in the area where the barrier wall is located, Compensate the corresponding exposure at the position of the retaining wall.

In the method for manufacturing the display panel provided by the embodiment of the present disclosure, before forming the pattern of the barrier wall, the photoelectric converter is formed first, and then the barrier wall pattern is formed on the side of the photoelectric converter away from the driving backplane through a photolithography process, and during exposure , Provide voltage to each photoelectric converter, according to the output signal of the photoelectric converter in the area of the barrier wall, compensate the corresponding exposure at the location of the barrier wall. The actual exposure of each area is monitored by the photoelectric converter, and the exposure is compensated, which improves the uniformity of exposure and keeps the pattern of the retaining wall at each position consistent, so that the light output efficiency of each LED chip is consistent and the display is improved. The uniformity of the panel light.

Optionally, in the preparation method provided by the embodiment of the present disclosure, in the above S103, a pattern of a retaining wall is formed on the side of the photoelectric converter away from the base substrate through a photolithography process, as shown in FIG. 4, which specifically includes:

S201, forming a barrier film layer covering the light-emitting diode chip, wherein the material of the barrier film layer is a negative photoresist material doped with scattering particles;

S202. Provide voltage to each photoelectric converter;

S203. Use an exposure machine to expose the barrier film layer, and adjust the exposure amount of the exposure machine according to the output signal of the photoelectric converter, so that the difference between the output signal of each photoelectric converter and the reference signal is within a preset range;

S204: Develop the barrier wall film layer to form a pattern of barrier walls surrounding each light-emitting diode chip.

In the embodiments of the present disclosure, the light during exposure is converted into electrical signal output through the photoelectric converter. The exposure machine compensates the exposure of the detection area in real time according to the output signal of the photoelectric converter, so that the light intensity received by each photoelectric converter is maintained Consistent, eliminates the influence of the scattering particles on the uniformity of exposure caused by the scattering of ultraviolet light, and ultimately leads to the reduction of light extraction efficiency caused by the appearance of the retaining wall that does not meet the design requirements.

In the above step S203, the exposure amount of the exposure machine is adjusted according to the output signal of the photoelectric converter, so that the difference between the output signal of each photoelectric converter and the reference signal is within a preset range. In the specific implementation, in order to make the exposure uniform Preferably, the upper limit of the above preset range can be a smaller value, for example, the preset range can be 0 to 5%, and the upper limit of the preset range can also be other smaller values, which is not done here. limited. That is to say, by compensating the exposure of the exposure machine, the output signal of each photoelectric converter is close to the reference signal, so that the light intensity received by each photoelectric converter is consistent, that is, it is matched with the position of each photoelectric converter. The actual exposure is the same to improve the exposure uniformity of the retaining wall.

Specifically, in the material of the barrier wall film layer, the higher the concentration of scattered particles, the higher the reflectivity of the barrier wall. In specific implementation, the reflectivity of the general retaining wall can reach more than 90%.

Optionally, in the manufacturing method provided by the embodiment of the present disclosure, after the barrier wall film layer is developed in step S204 to form the pattern of the barrier wall surrounding each light-emitting diode chip, it may also include performing post-processing on the pattern of the barrier wall. Bake to completely solidify the pattern of the retaining wall.

Optionally, in the preparation method provided by the embodiment of the present disclosure, a digital exposure machine is used to expose the barrier film layer, so that no mask is required, and through signal program control, a high-precision exposure process can be realized and the process can be simplified. cut costs.

Further, in the manufacturing method provided by the embodiment of the present disclosure, the display panel can be divided into a plurality of detection areas, each detection area is provided with a photoelectric converter, and the output signal of the photoelectric converter located in the detection area can be referred to. The exposure of the detection area is compensated. It is also possible to set a photoelectric converter between every two adjacent light-emitting diode chips, so that the exposure of each detection area can be controlled to the greatest extent.

In specific implementation, in order to avoid damage to the light-emitting diode chip when the pattern of the barrier is formed by the photolithography process, optionally, in the above-mentioned manufacturing method provided by the embodiment of the present disclosure, the driving backplane has a photoelectric converter. After the light-emitting diode chip is formed on the side, before the pattern of the barrier wall is formed on the side of the photoelectric converter away from the driving backplane through the photolithography process, it may further include:

A protective layer covering the LED chip is formed.

Optionally, in the foregoing preparation method provided by the embodiment of the present disclosure, the foregoing step S102 may include:

The light emitting diode chip is formed on the side of the driving backplane with the photoelectric converter by the transfer method.

Optionally, in the manufacturing method provided by the embodiment of the present disclosure, the above-mentioned driving backplane may further include a plurality of thin film transistors, and the thin film transistors are electrically connected to the corresponding light emitting diode chip through the connecting electrode, so that the light emitting diode chip can be controlled by the thin film transistor Glow to realize the screen display.

Specifically, photodiodes can convert received optical signals into electrical signals. At present, the external quantum efficiency (EQE) EQE of photodiodes at 400nm is about 40%. In general photolithography processes, the exposure is The ultraviolet band between the wavelengths of 365-435, so the use of photodiodes as photoelectric converters can realize the monitoring of exposure.

The following specific examples illustrate the preparation method of the present disclosure. In specific implementation, the preparation methods provided in the embodiments of the present disclosure include:

Step 1. Form a driving backplane, which includes a thin film transistor 10, as shown in FIG. 5a.

In specific implementation, as shown in FIG. 5a, the driving backplane includes a gate 11, a gate insulating layer 12, an active layer 13, an interlayer dielectric layer 14, a source electrode 15 and a leakage current which are sequentially formed on the base substrate 01. Very 16 layers of film.

Generally, when the drain electrode 16 is formed, the first electrode 24 of the photoelectric converter 20 may also be formed.

Step 2. A plurality of photoelectric converters 20 are formed on the side of the driving backplane with thin film transistors 10, as shown in FIG. 5b.

In specific implementation, as shown in FIG. 5 b, the photoelectric converter 20 is a photodiode, which specifically includes a P-type doped region 21, an intrinsic region 22 and an N-type doped region 23. The intrinsic region is silicon crystal or germanium crystal, the N-type doped region is silicon crystal or germanium crystal doped with a small amount of impurity phosphorus element (or antimony element): the P-type doped region is doped with a small amount of impurity boron element (or indium). Element) of silicon crystal or germanium crystal.

Step 4. The passivation layer 17, the anode 18, and the planarization layer 19 covering the thin film transistor 10 and the photoelectric converter 20 are sequentially formed, as shown in FIG. 5c.

Generally, the second electrode 25 of the photoelectric converter 20 can be formed at the same time as the anode 18 is formed.

Step 5. A plurality of light-emitting diode chips 30 are formed on the side of the driving backplane with the thin film transistor 10 by a transfer method, as shown in FIG. 5d.

Step 4. Form a protective layer 40 covering the light emitting diode chip 30, as shown in FIG. 5e.

Step 5, forming a barrier film layer 50 covering the light emitting diode chip 30, as shown in FIG. 5f.

Among them, the material of the barrier film layer is a negative photoresist material doped with scattering particles;

Step 6. Provide voltage to each photoelectric converter; and use a digital exposure machine to expose the barrier film layer, and adjust the exposure of the exposure machine according to the output signal of the photoelectric converter, so that the output signal of each photoelectric converter and the reference The signal difference is within the preset range;

Step 7. Develop the barrier film layer 50 to form a pattern of the barrier wall 51 surrounding each light-emitting diode chip 30, as shown in FIG. 5g.

In the embodiment of the present disclosure, before forming the pattern of the barrier wall, the photoelectric converter is formed first, and then the barrier wall pattern is formed on the side of the photoelectric converter away from the base substrate through a photolithography process, and during exposure, the photoelectric conversion The voltage is provided by the photoelectric converter, and the light during exposure is converted into electrical signal output through the photoelectric converter. The exposure machine compensates the exposure of the detection area in real time according to the output signal of the photoelectric converter, so that the light intensity received by each photoelectric converter is consistent , Eliminate the impact on the uniformity of exposure caused by the scattering of ultraviolet light by the scattered particles, and ultimately lead to the reduction of the light extraction efficiency caused by the shape of the retaining wall that does not meet the design requirements, improve the uniformity of exposure, and make the retaining wall at each position The graphics are kept consistent, so that the light output efficiency of each LED chip is consistent, and the light output uniformity of the display panel is improved.

Further, in the preparation method provided by the embodiment of the present disclosure, as shown in FIG. 1, after the pattern of the retaining wall 51 is formed, the protective cover 02 may also be formed.

Based on the same disclosed concept, the embodiments of the present disclosure also provide a display device, including any of the above-mentioned display panels provided by the embodiments of the present disclosure. The display device can be any product or component with a display function, such as a mobile phone, a tablet computer, a television, a monitor, a notebook computer, a digital photo frame, a navigator, etc. The implementation of the display device can refer to the above-mentioned embodiment of the LED display panel, and the repetition will not be repeated.

In the display panel, the manufacturing method and the display device provided by the embodiments of the present disclosure, before forming the pattern of the barrier wall, the photoelectric converter is formed first, and then the barrier wall is formed on the side of the photoelectric converter away from the base substrate through a photolithography process When exposing, the voltage is provided to each photoelectric converter, and the corresponding exposure amount at the position of the barrier wall is compensated according to the output signal of the photoelectric converter in the area where the barrier wall is located. The actual exposure of each area is monitored by the photoelectric converter, which improves the uniformity of exposure and keeps the pattern of the retaining wall in each position consistent, so that the light output efficiency of each LED chip is guaranteed to be consistent, and the light output uniformity of the display panel is improved.

Obviously, those skilled in the art can make various changes and modifications to the present disclosure without departing from the spirit and scope of the present disclosure. In this way, if these modifications and variations of the present disclosure fall within the scope of the claims of the present disclosure and equivalent technologies, the present disclosure also intends to include these modifications and variations.

Claims

A display panel, which includes:

Drive backplane; The drive backplane includes: a base substrate, and a plurality of photoelectric converters located on the base substrate;

A plurality of light-emitting diode chips located on the driving backplane;

A retaining wall is located above the drive backplane; the retaining wall is located between the adjacent light-emitting diode chips;

The photoelectric converter is located between the adjacent light-emitting diode chips; the photoelectric converter is configured to detect the amount of exposure during the photolithography process of making the retaining wall.
8. The display panel of claim 1, wherein the orthographic projection of the photoelectric converter on the base substrate and the orthographic projection of the retaining wall on the base substrate overlap each other.
8. The display panel of claim 1, wherein the area of the cross section of the barrier wall parallel to the driving backplane increases as the distance from the surface of the driving backplane decreases.
3. The display panel of claim 1, wherein the display panel is divided into a plurality of detection areas; each of the detection areas is provided with one photoelectric converter.
8. The display panel of claim 1, wherein the photoelectric converter is provided at every position between two adjacent light-emitting diode chips.
7. The display panel of claim 1, wherein the photoelectric converter comprises: a first electrode, a second electrode located on a side of the first electrode away from the base substrate, and a first electrode And the photodiode between the second electrode.
7. The display panel of claim 6, wherein the driving backplane further comprises: a plurality of thin film transistors and a plurality of connection electrodes on the base substrate;

The drain electrode of the thin film transistor and the connection electrode are connected in a one-to-one correspondence;

The first electrode and the drain electrode of the thin film transistor are arranged in the same layer, and the second electrode and the connecting electrode are arranged in the same layer.
The display panel of claim 1, wherein the material of the barrier film layer is a negative photoresist material doped with scattered particles.
8. The display panel of claim 1, wherein the barrier wall surrounds each of the light emitting diode chips.
9. The display panel according to any one of claims 1-9, further comprising: a protective layer covering the light-emitting diode chip.
A method for manufacturing a display panel according to any one of claims 1 to 10, which comprises:

Provide a driving backplane; the driving backplane includes: a base substrate, and a plurality of photoelectric converters located on the base substrate;

A plurality of light emitting diode chips are formed on the side of the driving backplane with the photoelectric converter, and the photoelectric converter is located between the adjacent light emitting diode chips;

The pattern of the barrier wall is formed on the side of the photoelectric converter away from the base substrate through a photolithography process, and during exposure, voltage is provided to each photoelectric converter, and the barrier wall is located according to the The output signal of the photoelectric converter compensates for the corresponding exposure at the position of the retaining wall.
11. The manufacturing method of claim 11, wherein the step of forming a pattern of a retaining wall on the side of the photoelectric converter away from the base substrate through a photolithography process specifically comprises:

Forming a barrier film layer covering the light-emitting diode chip, wherein the material of the barrier film layer is a negative photoresist material doped with scattering particles;

Supply voltage to each of the photoelectric converters;

An exposure machine is used to expose the barrier film layer, and the exposure amount of the exposure machine is adjusted according to the output signal of the photoelectric converter, so that the difference between the output signal of each photoelectric converter and the reference signal is expected Set within

The barrier film layer is developed to form a pattern of barrier walls surrounding each of the light-emitting diode chips.
The preparation method according to claim 12, wherein a digital exposure machine is used to expose the barrier film layer.
The manufacturing method of claim 11, wherein after forming a light-emitting diode chip on the side of the driving backplane with the photoelectric converter, a barrier is formed above the photoelectric converter by a photolithography process Before graphics, it also includes:

A protective layer covering the light-emitting diode chip is formed.
11. The manufacturing method of claim 11, wherein the forming a plurality of light-emitting diode chips on the side of the driving backplane with the photoelectric converter comprises:

A light emitting diode chip is formed on the side of the driving backplane with the photoelectric converter by a transfer method.
A display device comprising the display panel according to any one of claims 1-10.