WO2020238480A1 - Light emitting unit and manufacturing method therefor, and display device - Google Patents
Light emitting unit and manufacturing method therefor, and display device Download PDFInfo
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- WO2020238480A1 WO2020238480A1 PCT/CN2020/085710 CN2020085710W WO2020238480A1 WO 2020238480 A1 WO2020238480 A1 WO 2020238480A1 CN 2020085710 W CN2020085710 W CN 2020085710W WO 2020238480 A1 WO2020238480 A1 WO 2020238480A1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/841—Self-supporting sealing arrangements
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/85—Arrangements for extracting light from the devices
- H10K50/854—Arrangements for extracting light from the devices comprising scattering means
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/85—Arrangements for extracting light from the devices
- H10K50/856—Arrangements for extracting light from the devices comprising reflective means
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/85—Arrangements for extracting light from the devices
- H10K50/858—Arrangements for extracting light from the devices comprising refractive means, e.g. lenses
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
Definitions
- the present disclosure relates to the field of display technology, and in particular to a light-emitting unit, a manufacturing method thereof, and a display device.
- An organic light-emitting diode (OLED) display device generally includes a base substrate, and an anode layer, a first organic layer, a light-emitting layer, a second organic layer, and a metal electrode layer sequentially disposed on the base substrate.
- the first organic layer may include a hole injection layer and a hole transport layer
- the second organic layer may include an electron transport layer and an electron injection layer.
- the anode layer is connected with the positive pole of the external power source
- the metal electrode layer is connected with the negative pole of the external power source.
- the present disclosure provides a light emitting unit, a manufacturing method thereof, and a display device.
- the technical solutions are as follows:
- a light-emitting unit comprising: a stacked first electrode layer, a light-emitting layer, and a second electrode layer;
- the light emitting unit further includes: a flat layer and a light adjusting structure
- the flat layer is located between at least one of the first electrode layer and the second electrode layer and the light-emitting layer;
- the light adjustment structure is used to change the transmission direction of the light emitted to the surface of the light adjustment structure, and the light adjustment structure satisfies any one or a combination of the following: the light adjustment structure is located inside the flat layer, And, the light adjusting structure is located on a side of the flat layer away from the light emitting layer.
- the flat layer includes any one or a combination of the following:
- a first flat layer located between the first electrode layer and the light-emitting layer
- a second flat layer located between the second electrode layer and the light-emitting layer.
- the dielectric constant of the light adjustment structure is greater than or equal to the dielectric constant of the flat layer.
- the light adjustment structure is a scattering particle, and the scattering particle is mixed in the flat layer.
- the structure of the scattering particles mixed in the flat layer is any one or a combination of the following: a spherical structure, a prism structure, a prism structure, a truncated cone structure, a cylindrical structure, and a conical structure.
- the material of the scattering particles mixed in the flat layer is any one or a combination of the following: resin, silicon dioxide, titanium dioxide and zirconium dioxide.
- the light adjustment structure includes a light adjustment layer, and a side of the light adjustment layer close to the light-emitting layer has a plurality of convex structures.
- the protrusion structure is located near the orthographic projection of the surface of the light-emitting layer on the light-emitting layer, and is located inside the orthographic projection of the surface of the protrusion structure away from the light-emitting layer on the light-emitting layer .
- the structure of the convex structure distributed on the side of the light adjustment layer close to the light-emitting layer is any one or a combination of the following: a hemispherical structure, a prism structure, a prism structure, a truncated cone structure, and a cylinder Structure, pyramid structure and cone structure.
- the light emitting unit further includes: an injection layer located between the flat layer and the light emitting layer, and the injection layer is used for injecting charged particles into the light emitting layer.
- the first electrode layer is used to connect to the first pole of the AC power source
- the second electrode layer is used to connect to the second pole of the AC power source
- the material of the flat layer is an insulating material.
- the material of the flat layer is any one or a combination of the following: polyvinylpyrrolidone, polyvinylidene fluoride, silicon dioxide, and hafnium dioxide.
- the thickness of the flat layer is greater than or equal to 100 nanometers.
- At least one of the material of the first electrode layer and the material of the second electrode layer is an organic material.
- a method for manufacturing a light-emitting unit includes:
- the flat layer is located between at least one of the first electrode layer and the second electrode layer and the light-emitting layer;
- the light adjustment structure is used to change the transmission direction of the light emitted to the surface of the light adjustment structure, and the light adjustment structure satisfies any one or a combination of the following: the light adjustment structure is located inside the flat layer, And, the light adjusting structure is located on a side of the flat layer away from the light emitting layer.
- the forming a first electrode layer, a light emitting layer, a second electrode layer, a flat layer, and a light adjusting structure on the base substrate includes:
- the second electrode layer is formed on the base substrate on which the second light adjustment layer is formed.
- a display device in another aspect, includes the light-emitting unit according to any one of the first aspects.
- the display device further includes: a transparent cover plate covering the surface of the light-emitting unit, the transparent cover plate is used to protect the light-emitting unit, and the transparent cover plate is away from the side of the light-emitting unit
- the roughness of the surface is greater than the roughness of the surface of the transparent cover near the light-emitting unit.
- the surface of the transparent cover plate on the side away from the light-emitting unit has multiple convex structures or multiple concave structures.
- FIG. 1 is a schematic structural diagram of a light-emitting unit provided by an embodiment of the present disclosure
- FIG. 2 is a schematic structural diagram of another light-emitting unit provided by an embodiment of the present disclosure.
- FIG. 3 is a schematic structural diagram of another light-emitting unit provided by an embodiment of the present disclosure.
- FIG. 4 is a schematic structural diagram of still another light-emitting unit provided by an embodiment of the present disclosure.
- FIG. 5 is a schematic structural diagram of yet another light-emitting unit provided by an embodiment of the present disclosure.
- FIG. 6 is a schematic structural diagram of still another light-emitting unit provided by an embodiment of the present disclosure.
- FIG. 7 is a schematic structural diagram of yet another light-emitting unit provided by an embodiment of the present disclosure.
- FIG. 8 is a schematic structural diagram of still another light-emitting unit provided by an embodiment of the present disclosure.
- FIG. 9 is a flowchart of a method for manufacturing a light-emitting unit according to an embodiment of the present disclosure.
- FIG. 10 is a flowchart of another method for manufacturing a light-emitting unit provided by an embodiment of the present disclosure.
- FIG. 11 is a schematic diagram of a structure after forming a first light adjustment layer on a base substrate formed with a first electrode layer according to an embodiment of the present disclosure
- FIG. 12 is a schematic diagram of a structure after forming a second flat layer on a base substrate with a second injection layer provided by an embodiment of the present disclosure
- FIG. 13 is a flowchart of another method for manufacturing a light-emitting unit provided by an embodiment of the present disclosure.
- An OLED display device generally includes an anode layer, a first organic layer, a light-emitting layer, a second organic layer, and a metal electrode layer sequentially stacked on a glass substrate.
- the first organic layer may include a hole injection layer and a hole transport layer
- the second organic layer may include an electron transport layer and an electron injection layer.
- the anode layer is connected with the positive pole of the external power source
- the metal electrode layer is connected with the negative pole of the external power source.
- the electroluminescence process of the OLED display device is: the electrons in the external power supply are injected from the metal electrode layer and transmitted to the light-emitting layer through the first organic layer, and the holes in the external power supply are injected from the anode layer and pass through the second organic layer.
- the layer is transported to the light-emitting layer, so that electrons and holes recombine in the light-emitting layer to form excitons, and the light-emitting layer generates photons under the excitation of the excitons, so that the light-emitting layer emits light.
- the more excitons formed in the light-emitting layer, the more photons generated, and the more light emitted by the light-emitting layer are transported to the light-emitting layer, so that electrons and holes recombine in the light-emitting layer to form excitons, and the light-emitting layer generates photons under the excitation of the excitons, so that the light-emitting layer emits
- the OELD display device usually has four light transmission modes, namely: a surface plasmon mode, a waveguide mode, a substrate mode, and a radiation mode.
- the surface plasmon mode is a non-luminous mode formed by the resonance of photons and surface electrons of the metal electrode layer.
- the waveguide mode is a non-luminous mode formed between the organic layer (such as the hole injection layer and the hole transport layer, etc.) and the anode layer due to total reflection. Because of the total reflection of the substrate mode, the light is consumed in the non-luminous mode formed by the glass substrate.
- the radiation mode is the luminous mode in which light is radiated into the air.
- the light radiated into the air through the radiation mode accounts for about 20% of the light emitted by the light-emitting layer, that is, only 20% of the light emitted by the light-emitting layer is radiated into the air by the OLED display device, and the remaining light is all It is consumed in the film layer in the display device, resulting in low light extraction efficiency of the OLED display device.
- the light extraction efficiency is the proportion of the amount of light radiated into the air from the OLED display device in the total amount of light emitted by the light-emitting layer.
- the light emitting unit 1 can improve the light extraction efficiency of the light emitting unit.
- the light emitting unit 1 may include: a first electrode layer 11, a light emitting layer 12 and a second electrode layer 13 which are stacked.
- the light emitting unit 1 may further include: a flat layer 14 and a light adjusting structure 15.
- the flat layer 14 is located between at least one of the first electrode layer 11 and the second electrode layer 13 and the light-emitting layer 12. That is, the flat layer 14 includes any one or more of the following: a first flat layer 141 located between the first electrode layer 11 and the light-emitting layer 12; and, between the second electrode layer 13 and the light-emitting layer 12 The second flat layer 142.
- the first flat layer 141 is used to increase the distance between the first electrode layer 11 and the light emitting layer 12.
- the second flat layer 142 is used to increase the distance between the second electrode layer 13 and the light emitting layer 12.
- 1 is a schematic diagram of a first flat layer 141 between the light-emitting layer 12 and the first electrode layer 11.
- the light adjusting structure 15 is used to change the transmission direction of the light emitted to the surface of the light adjusting structure 15.
- the light adjusting structure 15 satisfies any one or a combination of the following: the light adjusting structure 15 is located inside the flat layer 14, and the light adjusting structure 15 is located outside the flat layer 14 on a side away from the light emitting layer 12.
- 1 is a schematic diagram of the light adjusting structure 15 located on the side of the first flat layer 141 away from the light emitting layer 12.
- the light-emitting unit provided by the embodiments of the present disclosure includes a flat layer.
- the distance between the light-emitting layer and the electrode layer on both sides of the flat layer is increased, and the distance between the light-emitting layer and the electrode layer is reduced.
- the amount of photons in which the surface electrons resonate reduces the amount of light consumed through the surface plasma mode, increases the amount of light emitted from the light-emitting unit into the air, and thereby improves the light-emitting efficiency of the light-emitting unit.
- the light-emitting unit further includes a light-regulating structure
- the light-regulating structure can change the transmission direction of the light emitted to the surface of the light-regulating structure, so that the incident angle of the light from the light-regulating structure to other film layers is changed, and when the light When the incident angle is less than the total reflection angle of light, light can be emitted from the other film through the refraction of light, reducing the amount of light that undergoes total reflection, that is, reducing the amount of light consumed through the waveguide mode, and increasing the amount of light entering the air The amount of light further improves the light-emitting efficiency of the light-emitting unit.
- the dielectric constant of the light adjustment structure may be greater than or equal to the dielectric constant of the flat layer.
- the dielectric constant of the flat layer mixed with the light regulation structure is increased relative to the dielectric constant of the flat layer.
- the first electrode layer and the second electrode layer are connected to an external power source, an electric field will be generated between the first electrode layer and the second electrode layer. If the dielectric constant of the flat layer is large, the flat layer's effect on the first electrode layer can be reduced.
- the influence of the field strength of the electric field generated by the second electrode layer makes the field strength of the electric field generated by the first electrode layer and the second electrode layer larger, which can accelerate the movement rate of electrons and holes injected into the light-emitting unit, so that More excitons can be generated in the light-emitting layer per unit time, so that the light-emitting layer can emit more light.
- the position of the flat layer is different, and the embodiments of the present disclosure take the following several implementation ways as examples for description.
- the flat layer includes the first flat layer 141. As shown in FIG. 1, the first flat layer 141 is located between the first electrode layer 11 and the light emitting layer 12. Moreover, FIG. 1 is a schematic diagram of the light adjusting structure 15 located on the side of the first flat layer 141 away from the light emitting layer.
- the amount of photons that resonate with the surface electrons of the metal electrode is negatively related to the target distance, which is the distance between the light-emitting layer and the metal electrode.
- the target distance which is the distance between the light-emitting layer and the metal electrode.
- the reduction of the light-emitting layer reduces the amount of light consumed when the light emitted by the light-emitting layer is transmitted between the light-emitting layer and the first electrode layer, increases the amount of light injected into the air from the light-emitting unit, and improves the light-emitting efficiency of the light-emitting unit.
- the flat layer includes the second flat layer 142. As shown in FIG. 2, the second flat layer 142 is located between the second electrode layer 13 and the light emitting layer 12. In addition, FIG. 2 is a schematic diagram of the light adjusting structure 15 located in the second flat layer 142.
- the arrangement of the second flat layer 142 increases the distance between the second electrode layer 13 and the light-emitting layer 12, reduces the amount of photons that resonate with the surface electrons of the second electrode layer 13, that is, reduces the amount of light emitted by the light-emitting layer.
- the amount of light consumed during transmission between the light-emitting layer and the second electrode layer increases the amount of light emitted from the light-emitting unit 1 into the air, thereby increasing the light-emitting efficiency of the light-emitting unit 1.
- the flat layer includes a first flat layer 141 and a second flat layer 142.
- the first flat layer 141 is located between the first electrode layer 11 and the light-emitting layer 12
- the second flat layer 142 is located between the second electrode layer 13 and the light-emitting layer 12.
- FIG. 2 is a schematic diagram of one light adjusting structure 15 located on the side of the first flat layer 141 away from the light emitting layer 12, and another light adjusting structure 15 located on the side of the second flat layer 142 away from the light emitting layer 12.
- the distance between the first electrode layer 11 and the light-emitting layer 12 is increased, the amount of photons that resonate with the surface electrons of the first electrode layer 11 is reduced, and the second is increased.
- the distance between the electrode layer 13 and the light-emitting layer 12 reduces the amount of photons that resonate with the surface electrons of the second electrode layer 13, so that the amount of light emitted from the light-emitting unit 1 into the air increases, thereby increasing the light-emitting unit 1.
- the light output efficiency since the distance between the first electrode layer 11 and the light-emitting layer 12 is increased, the amount of photons that resonate with the surface electrons of the first electrode layer 11 is reduced, and the second is increased.
- the light adjustment structure may have multiple setting manners.
- the embodiments of the present disclosure take the following two cases as examples for description.
- the light adjustment structure is a scattering particle, and the scattering particles are mixed in the flat layer 14.
- the first flat layer 141 when the first flat layer 141 exists between the light-emitting layer 12 and the first electrode layer 11, the first flat layer 141 may be mixed with scattering particles.
- the second flat layer 142 When there is a second flat layer 142 between the light emitting layer 12 and the second electrode layer 13, the second flat layer 142 may be mixed with scattering particles.
- the first flat layer 141 Scattering particles 151 may be mixed in both and the second flat layer 142.
- the other film layer may be a film layer adjacent to the flat layer mixed with the scattering particles.
- the other film layer may be the first electrode layer 11.
- the scattering particles 151 may be uniformly mixed in the flat layer 14. In this way, the scattering particles 151 located at different positions in the flat layer 14 can scatter the light emitted to the surface of the scattering particles 151, so that the incident angles of the light emitted from different positions of the flat layer to other layers are changed. , So that the amount of light incident on different positions of the other film layers are increased. In addition, the amount of light entering the air from different positions of the light-emitting unit can be approximately the same, which improves the uniformity of light emitted by the light-emitting unit.
- the shape of the scattering particles 151 can be set according to actual needs.
- the structure of the scattering particles 151 mixed in the flat layer 14 may be one or a combination of the following: spherical structure, prism structure, prismatic structure, truncated truncated structure, cylindrical structure, conical structure, and the like.
- Fig. 4 is a schematic diagram of the shape of the scattering particles as a conical structure.
- the material of the scattering particles 151 mixed in the flat layer 14 may be any one or a combination of the following: organic materials such as resin, inorganic materials such as silicon dioxide SiO2, titanium dioxide TiO2, and zirconium dioxide ZrO2.
- organic materials such as resin
- inorganic materials such as silicon dioxide SiO2, titanium dioxide TiO2, and zirconium dioxide ZrO2.
- the size of the scattering particles can be set according to actual needs. For example, the size of the scattering particles can be on the order of nanometers.
- the light-regulating structure is a light-regulating layer
- the side of the light-regulating layer close to the light-emitting layer 12 has a plurality of convex structures
- the light-regulating layer is located on the flat layer away from the light-emitting layer 12 One side.
- the side of the first flat layer 141 away from the light-emitting layer 12 may be provided with a light adjustment layer (for easy distinction, it is called Is the first light adjustment layer).
- the side of the second flat layer 142 away from the light-emitting layer 12 may be provided with a light adjustment layer (for easy distinction, it is called the second light Adjustment layer). As shown in FIG.
- the light-regulating layer has a convex structure on the side close to the light-emitting layer 12
- part of the light emitted to the surface of the convex structure can be refracted on the surface of the convex structure, so that when the light is irradiated to the film layer adjacent to the light-regulating layer
- the incident angle of the light is changed, and after sequential or multiple refraction and/or reflection, the incident angle of the light irradiating the surface of the other film layer is smaller than the total reflection angle of the light, destroying the total reflection condition of the light, so that the light can pass
- the refraction of light is emitted from the adjacent film layer, increasing the amount of light emitted from the adjacent film layer.
- the arrangement of the light adjustment layer reduces the amount of light that undergoes total reflection, reduces the amount of light consumed through the waveguide mode, increases the amount of light emitted by the light-emitting unit into the air, and improves the light-emitting efficiency of the light-emitting unit.
- the orthographic projection of the surface of the raised structure close to the light-emitting layer 12 on the light-emitting layer 12 may be located inside the orthographic projection of the surface of the raised structure away from the light-emitting layer 12 on the light-emitting layer 12.
- the orthographic projection of the surface of the raised structure close to the light-emitting layer 12 on the light-emitting layer 12 coincides with the orthographic projection of the surface of the raised structure far away from the light-emitting layer 12 on the light-emitting layer 12, which is not limited in the embodiment of the present disclosure. .
- the convex structure on the first light adjustment layer 152 is close to the first flat layer 141 in the orthographic projection M of the first flat layer 141, and the convex structure is located on the surface away from the first flat layer 141.
- the angle between the side surface of the convex structure on the first light adjustment layer 152 and the flat layer is less than 90 degrees, which increases the surface area of the convex structure for receiving light, so that more light can enter Into the convex structure and refract to the first electrode layer, the light emitted to the first electrode layer is further increased.
- the surface of the convex structure on the second light adjustment layer 153 close to the second flat layer 142 is in the orthographic projection E of the second flat layer 142, and the surface of the convex structure away from the second flat layer 142 is located in the second flat layer.
- the inside of the orthographic projection F on the layer 142 can also refract more light to the first electrode layer.
- the structure of the convex structure distributed on the side of the light adjustment layer close to the light-emitting layer 12 may be any one or a combination of the following: hemispherical structure, prism structure, prism structure, truncated truncated structure, cylindrical structure, The pyramid structure and the conical structure, etc., are not limited in the embodiment of the present disclosure.
- 5 is a schematic diagram of the convex structure being a truncated cone structure
- FIG. 6 is a schematic diagram of the convex structure being a hemispherical structure
- FIG. 7 is a schematic diagram of the convex structure being a conical structure.
- the plurality of raised structures may be evenly distributed.
- the uniformly distributed multiple convex structures can reflect and refract light in a more balanced manner, can further increase the amount of light entering the air, and further increase the light output efficiency of the light emitting unit.
- the amount of light entering the air from different positions of the light-emitting unit can be approximately the same, which improves the uniformity of light emitted by the light-emitting unit.
- the above three implementations of the flat layer can be arbitrarily combined with the two arrangements of the light adjustment structure to form light-emitting units with different structures.
- the surface of the film layer in contact with the convex structure has a convex structure matching the convex structure on the light adjustment layer.
- the side of the first flat layer 141 away from the light-emitting layer has a convex structure that matches the convex structure on the light adjustment layer
- the side of the second flat layer 142 away from the light-emitting layer has a convex structure that matches the light-emitting layer.
- the raised structure on the layer matches the raised structure.
- the material of the first electrode layer and/or the material of the second electrode layer may be organic materials, that is, the materials of the first electrode layer and the second electrode layer may both be organic materials, or the first electrode
- the material of any one of the layer and the second electrode layer may be an organic material.
- the material of any electrode layer is an organic material, since there are no free electrons on the surface of the organic material, the photons transmitted to the surface of any electrode layer will not resonate with the electrons, which effectively reduces the plasmon mode passing through the surface. The amount of light consumed further increases the amount of light emitted by the light-emitting unit into the air.
- the light emitting unit may further include: an injection layer.
- the injection layer is located between the flat layer and the light-emitting layer, and the injection layer is used to inject charged particles into the light-emitting layer.
- the charged particles can be electrons or holes.
- FIG. 8 there is a first injection layer 161 between the first flat layer 141 and the light emitting layer 12, and a second injection layer 162 is provided between the second flat layer 142 and the light emitting layer 12.
- the first injection layer 161 may be used to inject electrons into the light emitting layer 12, and the second injection layer 162 may be used to inject holes into the light emitting layer 12.
- the first injection layer 161 may be used to inject holes into the light emitting layer 12, and the second injection layer 162 may be used to inject electrons into the light emitting layer 12.
- the first injection layer 161 may be used to inject electrons and holes into the light-emitting layer 12, and the second injection layer 162 may be used to inject electrons and holes into the light-emitting layer 12.
- the embodiment of the present disclosure does not limit this.
- the injection layer can be used to inject charged particles into the light-emitting layer, instead of using an external power supply to inject charged particles into the light-emitting layer.
- it can reduce the energy consumption caused by the use of an external power source, and on the other hand, it reduces the amount of charged particles.
- the probability of staying in the electrode layer and flat layer passing by the light-emitting layer improves the utilization rate of charged particles.
- the external power source when injecting charged particles into the light-emitting layer through an external power source, the external power source may be a DC power source or an AC power source. And when the light-emitting unit includes an injection layer, the external power source may be an AC power source. In this case, it is equivalent to using an AC driving method to drive the light-emitting unit.
- the first electrode layer 11 may be connected to the first pole of the AC power source 2
- the second electrode layer 13 may be connected to the second pole of the AC power source.
- the material molecules of the film layer will be in an unstable charged state, making it prone to irreversible chemical changes, leading to the The material of the film layer is deteriorated (that is, the film layer is degraded), which in turn affects the service life of the film layer.
- the light-emitting unit in the embodiment of the present disclosure adopts an AC drive mode.
- the principle of AC driving to reduce the deterioration of the film will be described.
- the direction of the electric field formed between the first electrode layer and the second electrode layer is directed from the second electrode layer to the first electrode layer, and under the action of the electric field, the electric field in the first injection layer.
- the electrons move from the first injection layer to the light emitting layer, and the holes in the second injection layer move from the second injection layer to the light emitting layer, so that the electrons and holes can recombine in the light emitting layer to form excitons, so that the light emitting layer emits light.
- the direction of the current of the AC power source changes, and the direction of the electric field formed between the first electrode layer and the second electrode layer is directed from the first electrode layer to the second electrode layer, and the Under the action, the electrons in the light-emitting layer that are not recombined with holes can move from the light-emitting layer to the first injection layer, and then return to the first injection layer.
- the holes in the light-emitting layer that are not recombined with electrons are injected from the light-emitting layer to the second The layer moves and then returns to the second injection layer.
- the first stage and the second stage of the AC drive continuously alternately cycle to drive the light-emitting unit to emit light. In this process, the direction of movement of electrons and holes exhibits periodic changes, thus reducing the probability of the accumulation of charged particles in the film, thereby reducing the probability of film degradation due to the accumulation of charged particles in the film .
- the material of the flat layer may be an insulating material.
- the flat layer can block charged particles from entering the electrode layer, so that as many charged particles as possible enter the light-emitting layer, ensuring the amount of charged particles provided by the injection layer to the light-emitting layer, thereby ensuring the luminous effect.
- the material of the flat layer can be any one or a combination of the following: polyvinyl pyrrolidone (PVP), polyvinylidene fluoride (PVDF) and other organic materials, silicon dioxide SiO 2 and Hafnium dioxide HfO 2 and other inorganic materials.
- PVP polyvinyl pyrrolidone
- PVDF polyvinylidene fluoride
- the thickness of the flat layer can be selected according to actual needs.
- the thickness of the flat layer may be greater than or equal to 100 nanometers.
- the light-emitting unit provided by the embodiments of the present disclosure includes a flat layer.
- the distance between the light-emitting layer and the electrode layer on both sides of the flat layer is increased, and the distance between the light-emitting layer and the electrode layer is reduced.
- the amount of photons in which the surface electrons resonate reduces the amount of light consumed through the surface plasma mode, increases the amount of light emitted from the light-emitting unit into the air, and thereby improves the light-emitting efficiency of the light-emitting unit.
- the light-emitting unit further includes a light-regulating structure
- the light-regulating structure can change the transmission direction of the light emitted to the surface of the light-regulating structure, so that the incident angle of the light from the light-regulating structure to other film layers is changed, and when the light When the incident angle is less than the total reflection angle of light, light can be emitted from the other film through the refraction of light, reducing the amount of light that undergoes total reflection, that is, reducing the amount of light consumed through the waveguide mode, and increasing the amount of light entering the air The amount of light further improves the light-emitting efficiency of the light-emitting unit.
- the embodiment of the present disclosure provides a method for manufacturing a light-emitting unit, which is used to manufacture the light-emitting unit in the above-mentioned embodiments. As shown in FIG. 9, the method for manufacturing the light-emitting unit includes:
- FIG. 9 is a flowchart of a method for manufacturing a light-emitting unit according to an embodiment of the disclosure. As shown in FIG. 9, the manufacturing method of the light-emitting unit includes:
- Step 1001 Provide a base substrate.
- Step 1002 forming a first electrode layer on the base substrate.
- Step 1003 using a flat layer material doped with a light adjusting material, and forming a first flat layer including a light adjusting structure on the base substrate on which the first electrode layer is formed.
- the first flat layer is used to increase the distance between the first electrode layer and the light emitting layer
- the light adjustment structure is used to change the transmission direction of the light emitted to the surface of the light adjustment structure.
- Step 1004 forming a light emitting layer on the base substrate on which the first flat layer is formed.
- Step 1005 Using a flat layer material doped with a light-regulating material, a second flat layer including a light-regulating structure is formed on the base substrate on which the light-emitting layer is formed.
- the second flat layer is used to increase the distance between the second electrode layer and the light-emitting layer.
- Step 1006 forming a second electrode layer on the base substrate on which the second flat layer is formed.
- the light-emitting unit manufacturing method includes a flat layer.
- the gap between the light-emitting layer and the electrode layer on both sides of the flat layer is increased.
- the distance reduces the amount of photons that resonate with the surface electrons of the electrode layer, that is, reduces the amount of light consumed through the surface plasma mode, increases the amount of light injected from the light-emitting unit into the air, and improves the light-emitting efficiency of the light-emitting unit.
- the light-emitting unit further includes a light-regulating structure
- the light-regulating structure can change the transmission direction of the light emitted to the surface of the light-regulating structure, so that the incident angle of the light from the light-regulating structure to other film layers is changed, and when the light When the incident angle is less than the total reflection angle of light, light can be emitted from the other film through the refraction of light, reducing the amount of light that undergoes total reflection, that is, reducing the amount of light consumed through the waveguide mode, and increasing the amount of light entering the air The amount of light further improves the light-emitting efficiency of the light-emitting unit.
- the base substrate may be a transparent substrate, which specifically may be a substrate made of a transparent and non-metallic material with a certain hardness, such as glass, quartz, transparent resin, or the like.
- step 1002 methods such as magnetron sputtering, thermal evaporation, or plasma enhanced chemical vapor deposition (PECVD) may be used to deposit a layer of first electrode material with a certain thickness on the base substrate, The first electrode thin film layer is obtained, and then the first electrode thin film layer is patterned through a patterning process to obtain the first electrode layer.
- one patterning process may include: photoresist coating, exposure, development, etching and photoresist stripping.
- the thickness of the first electrode material and the first electrode layer can be set according to actual needs.
- the first electrode material may be indium tin oxide or silver.
- the first electrode material may be an organic material.
- the light adjustment material may be doped into the flat layer material first, and then magnetron sputtering, thermal evaporation or PECVD methods are used to deposit a layer with a certain degree on the base substrate on which the first electrode layer is formed.
- the flat layer material is thick and doped with the light adjustment material to obtain a flat thin film layer, and then the flat thin film layer is patterned through a patterning process to obtain the first flat layer including the light adjustment structure.
- the material of the first flat layer may be an insulating material.
- it may be an organic material such as polyvinyl pyrrolidone (PVP) or polyvinylidene fluoride (PVDF).
- the material of the first flat layer may be an inorganic material such as silicon dioxide SiO 2 or hafnium dioxide HfO 2 .
- the thickness of the first flat layer can be adjusted according to actual needs. For example, the thickness of the first flat layer may be greater than or equal to 100 nanometers.
- the light adjusting structure may be scattering particles, that is, the light adjusting material may be scattering particles.
- the structure of the scattering particles mixed in the first flat layer can be any one or a combination of the following: spherical structure, prism structure, prism structure, truncated truncated structure, cylindrical structure and conical structure.
- the light-regulating material may be any one or a combination of the following: organic materials such as resin, inorganic materials such as silicon dioxide SiO2, titanium dioxide TiO2, and zirconium dioxide ZrO2.
- the dielectric constant of the light adjustment structure may be greater than or equal to the dielectric constant of the flat layer.
- step 1004 methods such as magnetron sputtering, thermal evaporation or PECVD can be used to deposit a layer of luminescent material with a certain thickness on the base substrate on which the first flat layer is formed to obtain a luminescent thin film layer, and then pass through a pattern The process performs patterning processing on the light-emitting thin film layer to obtain the light-emitting layer.
- the thickness of the luminescent material and the luminescent layer can be set according to actual needs.
- the luminescent material may be a quantum hydrazine material.
- the quantum hydrazine material may be a mixed material of indium gallium nitride (InGaN) and gallium nitride (GaN).
- the light-regulating material can be doped into the flat layer material first, and then a layer with a certain thickness can be deposited on the base substrate with the light-emitting layer by magnetron sputtering, thermal evaporation or PECVD, etc. And the flat layer material doped with the light adjustment material to obtain a flat thin film layer, and then the flat thin film layer is patterned through a patterning process to obtain a second flat layer including the light adjustment structure.
- magnetron sputtering, thermal evaporation or PECVD can be used to deposit a layer of a second electrode material with a certain thickness on the base substrate on which the second flat layer is formed to obtain the second electrode thin film layer, and then The second electrode film layer is patterned through a patterning process to obtain the second electrode layer.
- the thickness of the second electrode material and the second electrode layer can be set according to actual needs.
- the second electrode material may be indium tin oxide or silver.
- the second electrode material may be an organic material.
- FIG. 10 is a flowchart of another method for manufacturing a light-emitting unit according to an embodiment of the disclosure. As shown in FIG. 10, the manufacturing method of the light-emitting unit includes:
- Step 1101 Provide a base substrate.
- step 110 For the implementation manner of step 1101, reference may be made to the implementation manner of step 1001, and details are not described herein in the embodiment of the present disclosure.
- Step 1102 forming a first electrode layer on the base substrate.
- step 1102 For the implementation manner of step 1102, reference may be made to the implementation manner of step 1002, and details are not described herein in the embodiment of the present disclosure.
- Step 1103 forming a first light adjustment layer on the base substrate on which the first electrode layer is formed, and the first light adjustment layer has a plurality of convex structures on the side away from the base substrate.
- Magnetron sputtering, thermal evaporation or PECVD can be used to deposit a layer of light-regulating material with a certain thickness on the base substrate on which the first electrode layer is formed to obtain the first light-regulating thin film layer, and then through a patterning process The first light adjustment film layer is patterned to obtain the first light adjustment layer, so that the surface of the first light adjustment layer away from the base substrate has a convex structure.
- the thickness of the light adjustment material and the first light adjustment layer can be set according to actual needs.
- the light adjusting material may be an organic material such as resin; or, the light adjusting material may be an inorganic material such as silicon dioxide SiO2, titanium dioxide TiO2, or zirconium dioxide ZrO2.
- the convex structure in the first light adjustment layer is used to change the transmission direction of the light emitted to the surface of the convex structure.
- the orthographic projection of the surface of the convex structure close to the light-emitting layer on the light-emitting layer is located inside the orthographic projection of the surface of the convex structure away from the light-emitting layer on the light-emitting layer.
- the convex structures are uniformly distributed on the side of the light adjustment layer close to the light emitting layer.
- the shape of the convex structure distributed on the side of the light-regulating layer close to the light-emitting layer 12 may be any one or a combination of the following: hemispherical structure, prism structure, prism structure, truncated cone structure, cylindrical structure, pyramid structure And cone structure.
- the convex structure in the first light adjustment layer 151 is a conical structure.
- Step 1104 forming a first flat layer on the base substrate on which the first light adjustment layer is formed.
- Magnetron sputtering, thermal evaporation or PECVD can be used to deposit a layer of flat layer material with a certain thickness on the base substrate on which the first light adjustment layer is formed to obtain the first flat thin film layer, and then through a patterning process The first flat film layer is patterned to obtain the first flat layer.
- Step 1105 forming a light emitting layer on the base substrate on which the first flat layer is formed.
- step 1105 For the implementation manner of step 1105, reference may be made to the implementation manner of step 1004, and details are not described herein in the embodiment of the present disclosure.
- Step 1106 forming a second flat layer on the base substrate on which the light-emitting layer is formed.
- Magnetron sputtering, thermal evaporation or PECVD can be used to deposit a layer of flat layer material with a certain thickness on the base substrate on which the light-emitting layer is formed to obtain a second flat thin film layer, and then perform a patterning process to the second The flat film layer is patterned to obtain a second flat layer.
- the second flat layer 142 obtained after the patterning process may be as shown in FIG. 12, and the surface of the second flat layer 142 away from the base substrate has a convex structure.
- Step 1107 forming a second light adjustment layer on the base substrate on which the second flat layer is formed, and the side of the second light adjustment layer close to the light emitting layer has a plurality of convex structures.
- Magnetron sputtering, thermal evaporation or PECVD can be used to deposit a layer of light-regulating material with a certain thickness on the base substrate with the second flat layer to obtain the second light-regulating thin film layer, and then through a patterning process
- the second light adjustment film layer is patterned to obtain a second light adjustment layer, so that the surface of the second light adjustment layer close to the base substrate has a convex structure, and the convex structure on the second light adjustment layer is similar to the second flat surface.
- the raised structure of the layer surface matches.
- the convex structure in the second light adjustment layer is used to change the transmission direction of the light emitted to the surface of the convex structure.
- Step 1108 forming a second electrode layer on the base substrate on which the second light adjustment structure is formed.
- step 1108 reference may be made to the implementation manner of step 1006, and details are not described herein in the embodiment of the present disclosure.
- the first flat layer can be selected between the first electrode layer and the light-emitting layer or not according to actual needs. Moreover, when there is no need to provide a first flat layer between the first electrode layer and the light-emitting layer, the above steps 1003 and 1104 can be selected not to be performed, that is, it can be directly formed on the base substrate on which the first light adjustment layer is formed. Luminescent layer. Similarly, the second flat layer can be arranged or not arranged between the second electrode layer and the light-emitting layer according to actual needs.
- the above steps 1005 and 1106 can be selected not to be performed, that is, the second light adjustment layer can be directly formed on the base substrate on which the light-emitting layer is formed. Floor.
- the light-emitting unit manufacturing method includes a flat layer.
- the gap between the light-emitting layer and the electrode layer on both sides of the flat layer is increased.
- the distance reduces the amount of photons that resonate with the surface electrons of the electrode layer, that is, reduces the amount of light consumed through the surface plasma mode, increases the amount of light injected from the light-emitting unit into the air, and improves the light-emitting efficiency of the light-emitting unit.
- the light-emitting unit further includes a light-regulating structure
- the light-regulating structure can change the transmission direction of the light emitted to the surface of the light-regulating structure, so that the incident angle of the light from the light-regulating structure to other film layers is changed, and when the light When the incident angle is less than the total reflection angle of light, light can be emitted from the other film through the refraction of light, reducing the amount of light that undergoes total reflection, that is, reducing the amount of light consumed through the waveguide mode, and increasing the amount of light entering the air The amount of light further improves the light-emitting efficiency of the light-emitting unit.
- an injection layer may be provided between the flat layer and the light-emitting layer.
- the injection layer may include a first injection layer and a second injection layer.
- the injection layer is used to inject charged particles into the light-emitting layer.
- the manufacturing method of the light-emitting unit includes:
- Step 1401 Provide a base substrate.
- step 140 For the implementation manner of step 1401, reference may be made to the implementation manner of step 1101, and details are not described herein in the embodiment of the present disclosure.
- Step 1402 forming a first electrode layer on the base substrate.
- step 1402 For the implementation manner of step 1402, reference may be made to the implementation manner of step 1102, and details are not described in the embodiment of the present disclosure.
- Step 1403 forming a first light adjustment layer on the base substrate on which the first electrode layer is formed.
- step 1403 For the implementation manner of step 1403, reference may be made to the implementation manner of step 1103, and details are not described herein in the embodiment of the present disclosure.
- Step 1404 forming a first flat layer on the base substrate on which the first light adjustment layer is formed.
- step 1404 For the implementation manner of step 1404, reference may be made to the implementation manner of step 1104, and details are not described herein in the embodiment of the present disclosure.
- Step 1405 forming a first injection layer on the base substrate on which the first flat layer is formed.
- Magnetron sputtering, thermal evaporation or PECVD can be used to deposit a layer of the first injection layer material with a certain thickness on the base substrate with the first flat layer to obtain the first injection film layer, and then pass through a patterning process The first injection film layer is patterned to obtain the first injection layer.
- the material of the first injection layer and the thickness of the first injection layer can be set according to actual needs.
- the material of the first injection layer may be a P-doped material or an N-doped material.
- Step 1406 forming a light-emitting layer on the base substrate on which the first injection layer is formed.
- step 1406 reference may be made to the implementation manner of step 1105, and details are not described herein in the embodiment of the present disclosure.
- Step 1407 forming a second injection layer on the base substrate on which the light-emitting layer is formed.
- Magnetron sputtering, thermal evaporation, or PECVD can be used to deposit a layer of material for the second injection layer with a certain thickness on the base substrate with the light-emitting layer to obtain the second injection film layer, and then perform a patterning process on the second injection layer.
- the second injection film layer is patterned to obtain the second injection layer.
- the material of the second injection layer and the thickness of the second injection layer can be set according to actual needs.
- the material of the second injection layer may be a P-doped material or an N-doped material.
- Step 1408 forming a second flat layer on the base substrate on which the second injection layer is formed.
- step 1408 For the implementation manner of step 1408, reference may be made to the implementation manner of step 1106, and details are not described herein in the embodiment of the present disclosure.
- Step 1409 forming a second light adjustment layer on the base substrate on which the second flat layer is formed.
- step 1409 For the implementation manner of step 1409, reference may be made to the implementation manner of step 1107, and details are not described herein in the embodiment of the present disclosure.
- Step 1410 forming a second electrode layer on the base substrate on which the second light adjustment layer is formed.
- step 1410 For the implementation manner of step 1410, reference may be made to the implementation manner of step 1006, and details are not described herein in the embodiment of the present disclosure.
- step 1403 and step 1409 can be selected not to be performed, and in step 1404 and step 1408, a flat layer material doped with a light adjustment material is used Make a flat layer.
- the first injection layer can be selected between the first flat layer and the light-emitting layer or not.
- the above step 1405 can be selected not to be performed, that is, the light emitting layer can be directly formed on the base substrate on which the first flat layer is formed.
- the second injection layer can be arranged or not arranged between the second flat layer and the light-emitting layer according to actual needs.
- the above step 1407 can be selected not to be performed, that is, the second flat layer can be directly formed on the base substrate on which the light-emitting layer is formed.
- the light-emitting unit manufacturing method includes a flat layer.
- the gap between the light-emitting layer and the electrode layer on both sides of the flat layer is increased.
- the distance reduces the amount of photons that resonate with the surface electrons of the electrode layer, that is, reduces the amount of light consumed through the surface plasma mode, increases the amount of light injected from the light-emitting unit into the air, and improves the light-emitting efficiency of the light-emitting unit.
- the light-emitting unit further includes a light-regulating structure
- the light-regulating structure can change the transmission direction of the light emitted to the surface of the light-regulating structure, so that the incident angle of the light from the light-regulating structure to other film layers is changed, and when the light When the incident angle is less than the total reflection angle of light, light can be emitted from the other film through the refraction of light, reducing the amount of light that undergoes total reflection, that is, reducing the amount of light consumed through the waveguide mode, and increasing the amount of light entering the air The amount of light further improves the light-emitting efficiency of the light-emitting unit.
- the embodiments of the present disclosure provide a display device, and the display device includes: the light-emitting unit of any one of the foregoing embodiments.
- the display device may further include: a transparent cover plate covering the surface of the light emitting unit.
- the transparent cover is used to protect the light-emitting unit, and the roughness of the surface of the transparent cover on the side away from the light-emitting unit is greater than the roughness of the surface of the transparent cover on the side close to the light-emitting unit.
- the surface of the transparent cover plate on the side away from the light-emitting unit may have multiple convex structures or concave structures.
- the light irradiated to the surface of the transparent cover plate on the side away from the light-emitting unit can be The interface of the transparent cover plate away from the light-emitting unit is reflected and refracted, so that the incident angle of light from the transparent cover plate into the air changes, and when the incident angle is smaller than the total reflection angle of the light from the transparent cover plate into the air , The light can be emitted from the transparent cover, and more light can be emitted from the transparent cover, which reduces the amount of light consumed through the substrate mode and increases the amount of light emitted from the display device.
- the display device may be: liquid crystal panel, electronic paper, organic light-emitting diode (English: Organic Light-Emitting Diode, OLED for short) panel, mobile phone, tablet computer, TV, monitor, notebook computer, digital photo frame, Any device or component with a display function, such as a navigator.
- OLED Organic Light-Emitting Diode
- the display device reduces the amount of light consumed through the surface plasma mode by providing a flat layer, and reduces the amount of light consumed through the waveguide mode by providing a light adjustment structure, and by improving the coverage on the light emission
- the roughness of the transparent cover on the surface of the unit reduces the amount of light consumed through the substrate mode, increases the amount of light injected into the air from the light-emitting unit, and improves the light-emitting efficiency of the light-emitting unit.
- first and second are only used for descriptive purposes, and cannot be understood as indicating or implying relative importance.
- at least one refers to one or more than one unless specifically defined otherwise.
- plurality refers to two or more, unless specifically defined otherwise.
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Abstract
Description
Claims (20)
- 一种发光单元(1),所述发光单元(1)包括:第一电极层(11)、发光层(12)和第二电极层(13);A light emitting unit (1), the light emitting unit (1) comprising: a first electrode layer (11), a light emitting layer (12) and a second electrode layer (13);所述发光单元(1)还包括:平坦层(14)和光调节结构(15);The light emitting unit (1) further includes: a flat layer (14) and a light adjusting structure (15);所述平坦层(14)位于所述第一电极层(11)和所述第二电极层(13)中至少一个与所述发光层(12)之间;The flat layer (14) is located between at least one of the first electrode layer (11) and the second electrode layer (13) and the light-emitting layer (12);所述光调节结构(15)用于改变发射至所述光调节结构(15)表面的光的传输方向,所述光调节结构(15)满足以下任一个或多个的组合:所述光调节结构(15)位于所述平坦层(14)的内部,以及,所述光调节结构(15)位于所述平坦层(14)的外部远离所述发光层(12)的一侧。The light adjustment structure (15) is used to change the transmission direction of the light emitted to the surface of the light adjustment structure (15), and the light adjustment structure (15) satisfies any one or a combination of the following: The structure (15) is located inside the flat layer (14), and the light adjustment structure (15) is located outside the flat layer (14) on a side away from the light-emitting layer (12).
- 根据权利要求1所述的发光单元(1),The light-emitting unit (1) according to claim 1,所述平坦层(14)包括以下任一个或多个的组合:The flat layer (14) includes any one or more of the following combinations:位于所述第一电极层(11)与所述发光层(12)之间的第一平坦层(141);A first flat layer (141) located between the first electrode layer (11) and the light-emitting layer (12);以及,位于所述第二电极层(13)与所述发光层(12)之间的第二平坦层(142)。And, a second flat layer (142) located between the second electrode layer (13) and the light-emitting layer (12).
- 根据权利要求1或2所述的发光单元(1),所述光调节结构(15)的介电常数大于或等于所述平坦层(14)的介电常数。The light-emitting unit (1) according to claim 1 or 2, the dielectric constant of the light adjustment structure (15) is greater than or equal to the dielectric constant of the flat layer (14).
- 根据权利要求1至3任一所述的发光单元(1),所述光调节结构(15)包括散射粒子(151),所述散射粒子(151)混合在所述平坦层(14)内。The light emitting unit (1) according to any one of claims 1 to 3, the light adjusting structure (15) comprises scattering particles (151), and the scattering particles (151) are mixed in the flat layer (14).
- 根据权利要求4所述的发光单元(1),混合在所述平坦层(14)内的散射粒子(151)的结构为以下任一种或多种的组合:球状结构、棱台结构、棱柱结构、圆台结构、圆柱结构和圆锥结构。The light-emitting unit (1) according to claim 4, the structure of the scattering particles (151) mixed in the flat layer (14) is any one or a combination of the following: spherical structure, prism structure, prism Structure, truncated cone structure, cylindrical structure and conical structure.
- 根据权利要求4所述的发光单元(1),混合在所述平坦层(14)内的散射粒子(151)的材料为以下任一种或多种的组合:树脂、二氧化硅、二氧化钛和二氧化锆。The light-emitting unit (1) according to claim 4, wherein the material of the scattering particles (151) mixed in the flat layer (14) is any one or a combination of the following: resin, silicon dioxide, titanium dioxide and zirconium dioxide.
- 根据权利要求1至6任一所述的发光单元(1),所述光调节结构(15)包括光调节层,所述光调节层靠近所述发光层(12)的一侧具有多个凸起结构。The light-emitting unit (1) according to any one of claims 1 to 6, the light-adjusting structure (15) comprises a light-adjusting layer, and a side of the light-adjusting layer close to the light-emitting layer (12) has a plurality of protrusions.起结构。 From the structure.
- 根据权利要求7所述的发光单元(1),所述凸起结构靠近所述发光层(12)的表面在所述发光层(12)上的正投影,位于所述凸起结构远离所述发光层(12)的表面在所述发光层(12)上的正投影的内部。The light-emitting unit (1) according to claim 7, wherein the convex structure is close to the orthographic projection of the surface of the light-emitting layer (12) on the light-emitting layer (12), and is located far away from the convex structure. The surface of the light emitting layer (12) is inside the orthographic projection on the light emitting layer (12).
- 根据权利要求7所述的发光单元(1),分布在所述光调节层靠近所述发光层(12)的一侧的凸起结构的结构为以下任一种或多种的组合:半球结构、棱台结构、棱柱结构、圆台结构、圆柱结构、棱锥结构和圆锥结构。The light-emitting unit (1) according to claim 7, wherein the structure of the convex structure distributed on the side of the light-regulating layer close to the light-emitting layer (12) is any one or a combination of the following: a hemispherical structure , Prismatic structure, prismatic structure, truncated cone structure, cylindrical structure, pyramid structure and conical structure.
- 根据权利要求1至9任一所述的发光单元(1),所述发光单元(1)还包括:注入层,所述注入层位于所述平坦层(14)与所述发光层(12)之间,所述注入层用于向所述发光层(12)注入带电粒子。The light-emitting unit (1) according to any one of claims 1 to 9, the light-emitting unit (1) further comprising: an injection layer, the injection layer being located between the flat layer (14) and the light-emitting layer (12) In between, the injection layer is used to inject charged particles into the light-emitting layer (12).
- 根据权利要求10所述的发光单元(1),所述第一电极层(11)用于与交流电源(2)的第一极连接,所述第二电极层(13)用于与所述交流电源(2)的第二极连接。The light-emitting unit (1) according to claim 10, the first electrode layer (11) is used to connect with the first pole of the AC power supply (2), and the second electrode layer (13) is used to connect with the The second pole of the AC power supply (2) is connected.
- 根据权利要求10或11所述的发光单元(1),所述平坦层(14)的材料为绝缘材料。The light-emitting unit (1) according to claim 10 or 11, wherein the material of the flat layer (14) is an insulating material.
- 根据权利要求12所述的发光单元(1),所述平坦层(14)的材料为以下任一种或多种的组合:聚乙烯吡咯烷酮、聚偏氟乙烯、二氧化硅和二氧化铪。The light-emitting unit (1) according to claim 12, wherein the material of the flat layer (14) is any one or a combination of the following: polyvinylpyrrolidone, polyvinylidene fluoride, silicon dioxide and hafnium dioxide.
- 根据权利要求1至13任一所述的发光单元(1),所述平坦层(14)的厚度大于或等于100纳米。According to the light-emitting unit (1) according to any one of claims 1 to 13, the thickness of the flat layer (14) is greater than or equal to 100 nanometers.
- 根据权利要求1至14任一所述的发光单元(1),所述第一电极层(11)的材料和所述第二电极层(13)中至少一个的材料为有机材料。The light-emitting unit (1) according to any one of claims 1 to 14, wherein at least one of the material of the first electrode layer (11) and the material of the second electrode layer (13) is an organic material.
- 一种发光单元的制造方法,所述方法包括:A method for manufacturing a light-emitting unit, the method comprising:提供一衬底基板;Provide a base substrate;在所述衬底基板上形成第一电极层、发光层、第二电极层、平坦层和光调节结构,得到所述发光单元;Forming a first electrode layer, a light emitting layer, a second electrode layer, a flat layer and a light adjusting structure on the base substrate to obtain the light emitting unit;其中,所述平坦层位于所述第一电极层和所述第二电极层中至少一个与所述发光层之间;Wherein, the flat layer is located between at least one of the first electrode layer and the second electrode layer and the light-emitting layer;所述光调节结构用于改变发射至所述光调节结构表面的光的传输方向,所述光调节结构满足以下任一个或多个的组合:所述光调节结构位于所述平坦层的内部,以及,所述光调节结构位于所述平坦层的外部远离所述发光层的一侧。The light adjustment structure is used to change the transmission direction of the light emitted to the surface of the light adjustment structure, and the light adjustment structure satisfies any one or a combination of the following: the light adjustment structure is located inside the flat layer, And, the light adjusting structure is located on a side of the flat layer away from the light emitting layer.
- 根据权利要求16所述的方法,所述在所述衬底基板上形成第一电极层、发光层、第二电极层、平坦层和光调节结构,包括:The method according to claim 16, said forming a first electrode layer, a light emitting layer, a second electrode layer, a flat layer and a light adjusting structure on the base substrate, comprising:在所述衬底基板上形成所述第一电极层;Forming the first electrode layer on the base substrate;在形成有所述第一电极层的衬底基板上形成第一光调节层;Forming a first light adjustment layer on the base substrate on which the first electrode layer is formed;在形成有所述第一光调节层的衬底基板上形成第一平坦层;Forming a first flat layer on the base substrate on which the first light adjustment layer is formed;在形成有所述第一平坦层的衬底基板上形成所述发光层;Forming the light-emitting layer on a base substrate on which the first flat layer is formed;在形成有所述发光层的衬底基板上形成第二平坦层,所述平坦层包括所述第一平坦层和所述第二平坦层;Forming a second flat layer on the base substrate on which the light-emitting layer is formed, the flat layer including the first flat layer and the second flat layer;在形成有所述第二平坦层的衬底基板上形成第二光调节层,所述光调节结构包括所述第一光调节层和所述第二光调节层;Forming a second light adjustment layer on the base substrate on which the second flat layer is formed, and the light adjustment structure includes the first light adjustment layer and the second light adjustment layer;在形成有所述第二光调节层的衬底基板上形成所述第二电极层。The second electrode layer is formed on the base substrate on which the second light adjustment layer is formed.
- 一种显示装置,所述显示装置包括:权利要求1至15任一所述的发光单元。A display device comprising: the light-emitting unit according to any one of claims 1 to 15.
- 根据权利要求18所述的显示装置,所述显示装置还包括:覆盖在所述发光单元表面的透明盖板,所述透明盖板用于保护所述发光单元,且所述透明 盖板远离所述发光单元一侧的表面的粗糙度大于所述透明盖板靠近所述发光单元一侧的表面的粗糙度。The display device according to claim 18, further comprising: a transparent cover plate covering the surface of the light-emitting unit, the transparent cover plate is used to protect the light-emitting unit, and the transparent cover plate is away from all The roughness of the surface on one side of the light emitting unit is greater than the roughness of the surface on the side of the transparent cover close to the light emitting unit.
- 根据权利要求19所述的显示装置,所述透明盖板远离所述发光单元一侧的表面具有多个凸起结构或多个凹陷结构。18. The display device according to claim 19, wherein a surface of the transparent cover on a side away from the light emitting unit has a plurality of convex structures or a plurality of concave structures.
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