WO2020237978A1 - Module d'alimentation intelligent et climatiseur - Google Patents

Module d'alimentation intelligent et climatiseur Download PDF

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Publication number
WO2020237978A1
WO2020237978A1 PCT/CN2019/111578 CN2019111578W WO2020237978A1 WO 2020237978 A1 WO2020237978 A1 WO 2020237978A1 CN 2019111578 W CN2019111578 W CN 2019111578W WO 2020237978 A1 WO2020237978 A1 WO 2020237978A1
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WO
WIPO (PCT)
Prior art keywords
circuit
bridge arm
power module
phase
control signal
Prior art date
Application number
PCT/CN2019/111578
Other languages
English (en)
Chinese (zh)
Inventor
李媛媛
冯宇翔
Original Assignee
广东美的制冷设备有限公司
美的集团股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from CN201910468142.3A external-priority patent/CN110138249B/zh
Priority claimed from CN201910468337.8A external-priority patent/CN110148594B/zh
Application filed by 广东美的制冷设备有限公司, 美的集团股份有限公司 filed Critical 广东美的制冷设备有限公司
Publication of WO2020237978A1 publication Critical patent/WO2020237978A1/fr

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Classifications

    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
    • H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
    • H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
    • H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode

Definitions

  • This application relates to the technical field of electronic circuits, and in particular to a smart power module and an air conditioner.
  • the intelligent power module namely IPM (Intelligent Power Module) wins a growing market with its high integration and high reliability advantages.
  • the smart power module usually integrates a driver IC and a power device. When working, the driver IC amplifies the logic signal output by the main controller and then outputs it to the power device to drive the power device to work.
  • Some highly integrated smart power modules may also integrate power factor correction switch tubes. The power factor correction switch tubes work based on the driver IC. It is bound to need to integrate the corresponding driver circuit in the driver IC, which will lead to the size of the smart power module. Increase.
  • the main purpose of this application is to propose a smart power module and an air conditioner, aiming to reduce the size of the smart power module and reduce the area occupied by the smart power module on the electric control board.
  • an intelligent power module the intelligent power module includes:
  • the first control signal receiving end and the second control signal receiving end receive the control signal output by the main controller
  • a power factor correction power switch module includes a gallium nitride type high electron mobility transistor, the base of the gallium nitride type high electron mobility transistor is connected to the first control signal receiving end ;
  • a bridge arm drive circuit the logic signal input end of the bridge arm drive circuit is connected to the second control signal receiving end, and the multiple output ends of the bridge arm drive circuit are one-to-one with the controlled end of the inverter bridge circuit connection.
  • the inverter bridge circuit includes a three-phase upper leg circuit and a three-phase lower leg circuit;
  • the bridge arm drive circuit includes a three-phase upper bridge arm drive circuit and a three-phase lower bridge arm drive circuit.
  • the output end of the three-phase upper bridge arm drive circuit is connected to the controlled end of the three-phase upper bridge arm circuit one to one.
  • the output end of the phase lower bridge arm drive circuit is connected to the controlled end of the three-phase lower bridge arm circuit one to one.
  • the three-phase upper bridge arm drive circuit is packaged as an integrated chip, and the three-phase lower bridge arm drive circuit is packaged as an integrated chip;
  • the three-phase upper bridge arm drive circuit and the three-phase lower bridge arm drive circuit are packaged as an integrated chip.
  • the smart power module further includes a mounting substrate, and one side surface of the mounting substrate is provided with a first mounting position and a plurality of second mounting positions;
  • the power factor correction power switch module is arranged on the first installation position, and the three-phase upper bridge arm circuit and the three-phase lower bridge arm circuit are arranged on the corresponding second installation position.
  • the mounting substrate includes:
  • a circuit wiring layer is provided on one side surface of the heat dissipation substrate, and the circuit wiring layer is formed with a third mounting position for mounting the bridge arm drive circuit;
  • the smart power module further includes an insulating layer, which is sandwiched between the circuit wiring layer and the heat dissipation substrate.
  • the smart power module further includes pins, the pins are arranged on the circuit wiring layer, and the power factor correction power switch module and the inverter bridge are connected to the power factor correction
  • the circuit is electrically connected to the bridge arm drive circuit.
  • the smart power module further includes a packaging casing for packaging the main controller, the power factor correction power switch module, the inverter bridge circuit, and the bridge arm drive circuit.
  • the smart power module further includes a heat sink disposed on the mounting substrate away from the power factor correction power switch module, the three-phase upper bridge arm circuit, and the three-phase lower bridge arm One side of the circuit.
  • the inverter bridge circuit constitutes a compressor power module
  • the inverter bridge circuit constitutes a wind turbine power module.
  • This application also proposes an air conditioner, including an electric control board, a main controller, and the above-mentioned smart power module; the main controller settings and the smart power module are set on the electric control board, The circuit wiring on the electric control board is electrically connected.
  • This application integrates a power factor correction power switch module, an inverter bridge circuit, and a bridge arm drive circuit into the same package to form an intelligent power module, and the power factor correction power switch module uses a gallium nitride type high electron mobility transistor to achieve , Gallium nitride type high electron mobility transistor is directly controlled by the main controller, no driver IC is required to amplify or logic conversion of the control signal of the main controller, which is beneficial to improve the response speed of the power factor correction power switch module .
  • the bridge arm drive circuit does not need to drive the power factor correction power switch module to work, and can directly convert the received control signal into a corresponding drive signal to drive the corresponding bridge arm power switch tube in the inverter bridge circuit to turn on/off.
  • the internal structure and circuit structure of the bridge arm drive circuit can be simplified, and the volume and design difficulty of the bridge arm drive circuit can be reduced.
  • it can reduce the difficulty of arrangement and wiring of various devices in the smart power module, which is beneficial to reduce the size of the smart power module, improve the space utilization rate of the smart power module, and reduce the occupied area of the smart power module on the electric control board.
  • FIG. 1 is a schematic diagram of a circuit structure of an embodiment of an intelligent power module of this application
  • FIG. 2 is a schematic structural diagram of an embodiment of an intelligent power module of this application
  • FIG. 3 is a schematic structural diagram of another embodiment of an intelligent power module of this application.
  • This application proposes an intelligent power module.
  • the intelligent power module is suitable for inverters and various inverter power supplies that drive motors to realize functions such as variable frequency speed regulation, metallurgical machinery, electric traction, and servo drives. It is especially suitable for the work of motors that drive compressors such as air conditioners and refrigerators.
  • the algorithms of inverter drives are basically solidified in most cases.
  • the main controller namely MCU
  • An intelligent power module is formed on a circuit board.
  • the power switch tube is mostly realized by IGNT and MOS tube, its driving voltage is generally 12V or 15V. Therefore, a bridge arm driving circuit is usually connected in series between the main controller and the power module to drive The power switch tube works.
  • the power switch tubes or diodes of the power factor correction circuit are usually integrated into the smart power module.
  • the function of driving the power factor correction power switch tube is usually integrated into the bridge arm drive circuit, such as the HVIC chip, so the HVIC chip must drive the inverter at the same time.
  • the variable bridge circuit and the power factor correct the drive signal of the power switch module, which makes the internal structure of the HVIC chip complicated and easily reduces the response speed of each switch tube.
  • the smart power module includes:
  • the first control signal receiving end and the second control signal receiving end receive the control signal output by the main controller
  • the power factor correction power switch module 30 includes a gallium nitride HEMT tube (high ele113tron mobility transistor, high electron mobility transistor), the base of the gallium nitride type high electron mobility transistor is connected to the first control terminal of the main controller through a first control signal receiving terminal;
  • the bridge arm drive circuit 20 the logic signal input end of the bridge arm drive circuit 20 is connected to the second control end of the main controller through the second control signal receiving end, and the multiple output ends of the bridge arm drive circuit 20 It is connected to the controlled end of the inverter bridge circuit 10 one to one.
  • the power factor correction power switch module 30 in this embodiment is implemented by a gallium nitride type high electron mobility transistor.
  • gallium nitride (GaN) Transistors especially GaN HEMTs (High Electron Mobility Transistors) have low terminal capacitance and no reverse recovery losses caused by body diodes, which can reduce switching losses.
  • gallium nitride (GaN) The switching speed of the transistor is faster than that of the silicon-based switching tube, so the overall switching performance is better than that of the silicon-based switching tube, which can achieve a higher switching frequency, thereby increasing the power density and transient state while maintaining reasonable switching losses performance.
  • Power switch module uses GaN due to power factor correction HEMT is used as a switching element, the two-dimensional electronic gas characteristics of GaN HEMT, GaN HEMT does not require parallel FRD111, and GaN
  • the gate charge of HEMT is much less than that of IGBT, so there is no need to connect the gate to protect it.
  • the driving voltage of GaN HEMT is relatively small, so you can directly use the control signal of the main controller as GaN HMET That is, the power factor correction power switch module 30 can be directly controlled by the main controller, and there is no need to provide a drive circuit for the power factor correction power switch module 30.
  • the intelligent power module also includes a power factor correction control signal input terminal power factor correction OUT.
  • the main controller is the MCU.
  • the MCU integrates a logic controller, memory, data processor, etc., as well as software programs and/or modules that are stored on the memory and can run on the data processor.
  • the MCU runs Or execute software programs and/or modules stored in the memory, and call data stored in the memory, and output corresponding control signals to the power factor correction power switch module 30 and the bridge arm drive circuit 20, so that the power factor correction power switch module
  • the gallium nitride type high electron mobility transistor 1127 in 30 is turned on/off according to the received control signal, so as to realize the power factor correction of the connected DC power supply.
  • the inverter bridge circuit 10 includes a three-phase upper bridge arm circuit 11 and a three-phase lower bridge arm circuit 12 to work.
  • the bridge arm drive circuit 20 drives the power switch tubes in the three-phase upper arm circuit 11 and the three-phase lower arm circuit 12 to turn on/off according to the control signal output by the MCU to drive fans, compressors, motors and other loads to work .
  • the bridge arm drive circuit 20 does not need to drive the power factor correction power module to work, its internal circuit structure can be simplified. When a driver chip is used to implement it, the internal algorithm program can also be simplified, thereby improving the bridge
  • the response of the arm drive circuit 20 to the control signal can further increase the driving rate of the bridge arm drive circuit 20 to the inverter bridge circuit 10.
  • the gallium nitride type high electron mobility transistor can be integrated in the smart power module, or the power factor correction circuit composed of diodes, inductors and other components can be integrated.
  • the power factor correction circuit may be a step-up type power factor correction circuit, or a step-down type power factor correction circuit, or a buck-boost type power factor correction circuit.
  • the power factor correction circuit adjusts the power factor of the direct current, and the adjusted direct current is output to the power input end of the inverter bridge circuit 10, so that each power module drives the corresponding load.
  • the adjusted direct current can also generate the working voltage of the control chip such as 5V to provide the working voltage for the circuit modules such as the main controller.
  • Power switch module 30 uses GaN due to power factor correction
  • the high electron mobility transistor 1127 is used as a switching element, the two-dimensional electron gas characteristics of GaN HEMT, GaN HEMT does not need to be connected in parallel with FRD111, and GaN
  • the gate charge of HEMT is much less than that of IGBT, so there is no need to connect the gate to protect it.
  • the driving voltage of GaN HEMT is small, and the control signal of the main controller can be directly used as GaN HMET That is, the power factor correction power switch module 30 can be directly controlled by the main controller, and there is no need to provide a drive circuit for the power factor correction power switch module 30.
  • the line distance between the power factor correction power switch module 30 and the main controller can be shortened, and the GaN of the power factor correction power switch module 30 can be improved.
  • the response speed of the high electron mobility transistor 1127 to the control signal output by the main controller, and the shortening of the circuit can also reduce the interference signal on the circuit and the power factor correction GaN of the power switch module 30 The impact of HEMT work.
  • the power factor correction power switch module 30 uses the source power factor correction and the drain-VP of the GaN high electron mobility transistor 1127 to access the power factor correction inductor.
  • the switching frequency of the power factor correction power switch module 30 is much higher than the switching frequency of the bridge arm circuit.
  • the switching frequency of the power factor correction power switch module 30 is the switching frequency of each switch tube of the bridge arm circuit. If the drive signal of the power factor correction power switch module 30 is integrated into the drive chip, the power factor correction power switch module 30 is likely to cause serious electromagnetic interference to the bridge arm circuit, and affect the normal operation of the bridge arm circuit.
  • the power factor correction power switch module 30 and the three-phase bridge arm circuit of the embodiment are directly controlled by the main controller, which can also reduce the interference of the power factor correction power switch module 30 to the three-phase bridge arm circuit.
  • the present application integrates the power factor correction power switch module 30, the inverter bridge circuit 10, and the bridge arm drive circuit 20 into the same package to form an intelligent power module, and the power factor correction power switch module 30 adopts gallium nitride type high electron mobility
  • the GaN high electron mobility transistor is directly controlled by the main controller, and there is no need to set up a driver IC to amplify the control signal of the main controller or perform logic conversion processing, which is beneficial to improve the power factor correction power switch The response speed of module 30.
  • the bridge arm drive circuit 20 does not need to drive the power factor correction power switch module 30 to work, and can directly convert the received control signal into a corresponding drive signal to drive the corresponding bridge arm power switch tube in the inverter bridge circuit 10 to turn on/ Turning off, therefore, can simplify the internal structure and circuit structure of the bridge arm drive circuit 20, thereby reducing the size and design difficulty of the bridge arm drive circuit 20. In addition, it can reduce the difficulty of arrangement and wiring of various devices in the smart power module, which is beneficial to reduce the size of the smart power module, improve the space utilization rate of the smart power module, and reduce the occupied area of the smart power module on the electric control board.
  • the inverter bridge circuit 10 can set the number of bridge arms according to the type of load to be driven. For example, it can be set to two-phase when driving a DC fan, and when driving a compressor or an AC fan. In this case, three-phase can be set, and this embodiment takes the three-phase inverter bridge circuit 10 as an example for description.
  • the three-phase inverter bridge circuit 10 includes a three-phase upper bridge arm circuit 11 and a three-phase lower bridge arm circuit 12;
  • the bridge arm drive circuit 20 includes a three-phase upper bridge arm drive circuit 20 and a three-phase lower bridge arm drive circuit 20.
  • the output terminal of the three-phase upper bridge arm drive circuit 20 is connected to the three-phase upper bridge arm circuit 11.
  • the control terminals are connected one-to-one, and the output terminals of the three-phase lower-arm drive circuit 20 are connected to the controlled terminals of the three-phase lower-arm circuit 12 one-to-one.
  • the bridge arm drive circuit 20 includes a high-voltage side drive circuit and a low-voltage side drive circuit.
  • the high-voltage side drive circuit includes a three-phase high-side drive unit corresponding to the three-phase high-side drive circuit 20.
  • the output terminals of the driving unit are all connected one-to-one with the three-phase upper bridge arm circuit through the high-voltage side signal output terminal.
  • the low-voltage side drive circuit includes a three-phase low-side drive unit corresponding to the three-phase low-side drive circuit 20, and the output end of each phase of the low-voltage side drive unit is connected to the three-phase low-side arm circuit one-to-one via the low-voltage side signal output end .
  • the three-phase upper arm drive circuit 20 is packaged as an integrated chip, and the three-phase lower arm drive circuit is packaged as an integrated chip;
  • the three-phase upper bridge arm drive circuit 20 and the three-phase lower bridge arm drive circuit 20 are packaged as an integrated chip.
  • the bridge arm drive circuit 20 can optionally be implemented with a high-voltage integrated chip HVIC.
  • the three-phase high-side drive unit of the high-side drive circuit is integrated in the high-voltage integrated chip HVIC, and the three-phase low-side drive circuit of the low-side drive circuit is integrated in the low-voltage integrated chip.
  • each phase high-side drive unit in the three-phase high-side drive unit is integrated with the one-phase high-side drive unit in the three-phase low-side drive unit, for example, the U-phase high-side drive unit and U
  • the phase high-voltage side drive unit is integrated into an HVIC, and the specific setting method can be different according to the internal structure of the intelligent power module, and there is no restriction here.
  • each phase bridge arm drive circuit 20 is an independent integrated chip, and the number of integrated chips can be set corresponding to the number of bridge arms.
  • the switching tubes of the inverter bridge circuit 10 may be implemented by power tubes such as MOS tubes and IGBTs.
  • the switch tube in the inverter bridge circuit 10 adopts IGBTs
  • the three-phase upper bridge arm circuit 11 and the three-phase lower bridge arm circuit 12 are packaged as an HVIC chip as an example for description.
  • the The power terminal VDD of the HVIC chip is the power supply positive terminal of the low voltage area of the smart power module.
  • the first upper arm signal terminal HIN1, the second upper arm signal terminal HIN2, and the third upper arm signal terminal HIN3 of the HVIC chip They are the U-phase upper bridge arm input end, the V-phase upper bridge arm input end, and the W-phase upper bridge arm input end of the smart power module.
  • the first lower bridge arm signal terminal LIN1 and the second lower bridge arm of the HVIC chip are the U-phase lower bridge arm input end, the V-phase lower bridge arm input end, and the W-phase lower bridge arm input end of the smart power module.
  • the HVIC chip's The ground terminal GND is used as the negative power supply terminal of the low-voltage area of the smart power module, and the VDD-GND voltage is generally 15V.
  • the first power supply positive terminal VB1 of the HVIC chip serves as the U-phase high-voltage region power supply positive terminal of the smart power module; the first high-voltage region control terminal HO1 of the HVIC chip is connected to the gate of the IGBT tube 1121; The first power supply negative terminal VS1 of the HVIC chip is connected to the emitter of the IGBT tube 1121, the anode of the fast recovery diode 1111, the collector of the IGBT tube 1114, and the cathode of the fast recovery diode 1114.
  • the U-phase high-voltage region power supply negative terminal UVS of the smart power module; the filter capacitor 1131 is connected between the U-phase high-voltage region power supply positive terminal and the U-phase high-voltage region power supply negative terminal of the smart power module.
  • the second power supply positive terminal VB2 of the HVIC chip is used as the power supply positive terminal of the V-phase high voltage region of the smart power module; the second high voltage region control terminal HO2 of the HVIC chip is connected to the gate of the IGBT tube 1122;
  • the second power supply negative terminal of the HVIC chip is connected to the collector of the IGBT tube 1122, the anode of the fast recovery diode 1112, the emitter of the IGBT tube 1125, and the cathode of the fast recovery diode 1115 as smart power.
  • the power supply negative terminal of the V-phase high voltage area of the module; the filter capacitor 1132 is connected between the positive power supply terminal of the V-phase high voltage area and the negative power supply terminal of the V-phase high voltage area of the smart power module.
  • the third power supply positive terminal VB3 of the HVIC chip is used as the power supply positive terminal of the W-phase high voltage region of the smart power module; the third high voltage region control terminal HO3 of the HVIC chip is connected to the gate of the IGBT tube 1123;
  • the third power supply negative terminal of the HVIC chip is connected to the collector of the IGBT tube 1123, the anode of the fast recovery diode 1113, the emitter of the IGBT tube 1126, and the cathode of the fast recovery diode 1116.
  • the W-phase high-voltage region power supply negative terminal WVS of the smart power module is connected between the W-phase high-voltage region power supply positive terminal WVB and the W-phase high-voltage region power supply negative terminal of the smart power module.
  • the first low-voltage region control terminal LO1, the second low-voltage region control terminal LO2, and the third low-voltage region control terminal LO3 of the HVIC chip are respectively connected to the gate of the IGBT tube 1124, the gate of the IGBT tube 1125, and the The gate of the IGBT tube 1126 is connected; the emitter of the IGBT tube 1121 is connected to the cathode of the fast recovery diode 1111, the emitter of the IGBT tube 1122, the cathode of the fast recovery diode 1112, and the cathode of the IGBT tube 1123
  • the common junction formed by the common connection of the emitter and the cathode of the fast recovery diode 1113 serves as the high-voltage input terminal P of the smart power module, and the high-voltage input terminal P is generally connected to 300V.
  • the common junction formed by the common connection between the collector of the IGBT tube 1124 and the anode of the fast recovery diode 1114 serves as the U-phase low-voltage reference terminal UN of the smart power module.
  • the collector of the IGBT tube 1125 is connected to the
  • the common junction formed by the common connection of the anodes of the fast recovery diode 1115 is used as the V-phase low voltage reference terminal VN of the smart power module, and the collector of the IGBT tube 1126 is formed by the common connection of the anode of the fast recovery diode 1116.
  • the common contact is used as the W-phase low voltage reference terminal WN of the smart power module.
  • HO1 is the logic output signal of VS1 or VS1+15V
  • HO2 is the logic output signal of VS2 or VS2+15V
  • HO3 is the logic output signal of VS3 or VS3+15V
  • LO1, LO2, LO3 are the logic output signal of 0 or 15V.
  • the HVIC circuit can also integrate a bridge-to-tube interlock circuit to ensure that the input signal of the same phase will not be high at the same time, that is, HIN1 and LIN1, HIN2 and LIN2, HIN3 and LIN3 will not appear high at the same time .
  • the HVIC chip can also be integrated with a bootstrap circuit, and the bootstrap circuit can be implemented by using elements such as MOS tubes, diodes, and capacitors.
  • a resistor (1141-1146) is also connected in series between each drive signal output terminal of the HVIC chip and the corresponding IGBT.
  • the smart power module further includes a mounting substrate 40, and one side surface of the mounting substrate 40 is provided with a first mounting position and a plurality of second mounting positions;
  • the power factor correction power switch module 30 is disposed on the first installation position, and the three-phase upper bridge arm circuit 111 and the three-phase lower bridge arm circuit 112 are disposed on the corresponding second installation position.
  • the mounting substrate includes:
  • the circuit wiring layer 41 is disposed on one side surface of the heat dissipation substrate, and the circuit wiring layer 41 is formed with a third mounting position for the bridge arm driving circuit 20 to be installed;
  • the smart power module further includes an insulating layer 42 sandwiched between the circuit wiring layer 41 and the heat dissipation substrate.
  • a circuit wiring layer 41 is provided on the mounting substrate 40.
  • the circuit wiring layer 41 forms corresponding lines on the mounting substrate 40 and corresponds to the installation of the electronic components in the power device. Bit, namely the pad.
  • a copper foil is laid on the insulating layer 42 and the copper foil is etched according to a preset circuit design, thereby forming the circuit wiring layer 41.
  • the aluminum nitride ceramic substrate When the mounting substrate 40 is implemented using an aluminum nitride ceramic substrate, the aluminum nitride ceramic substrate includes an insulating heat dissipation layer and a circuit wiring layer 41 formed on the insulating heat dissipation layer.
  • the substrate When a substrate made of a metal material is used, the substrate includes a metal heat dissipation layer, an insulating layer 42 laid on the metal heat dissipation layer, and a circuit wiring layer 41 formed on the insulating layer 42.
  • the mounting substrate 40 may be a single-sided wiring board.
  • the insulating layer 42 is sandwiched between the circuit wiring layer 41 and the metal mounting substrate 40.
  • the insulating layer 42 is used to achieve electrical isolation and electromagnetic shielding between the circuit wiring layer 41 and the metal mounting substrate 40, as well as to reflect external electromagnetic interference, so as to prevent external electromagnetic radiation from interfering with the normal operation of the power device and reducing the electromagnetic environment in the surrounding environment.
  • the mounting substrate 40 can also be provided with an insulating layer 42 according to the material of the mounting substrate 40.
  • the insulating layer 42 can be optionally used. It is made of thermoplastic glue or thermosetting glue to realize the fixed connection and insulation between the mounting substrate 40 and the circuit wiring layer 41.
  • the insulating layer 42 may be implemented by using one or a mixture of epoxy resin, aluminum oxide, and high-thermal-conductivity filler material, or a high-thermal-conductivity insulating layer 42 realized by mixing.
  • the smart power module of this embodiment does not need to be provided with a driver IC, the electromagnetic interference of the power device to the driver IC does not need to be considered when manufacturing the mounting substrate and the circuit wiring layer, so the wiring difficulty of the circuit wiring layer can be reduced.
  • the driver IC is a non-power device, and the heat generated by it is less than that of the power device. When there is no need to provide a driver IC, there is no need to consider the thermal insulation between the driver IC and the power device.
  • the smart power module further includes a pin 50, the pin 50 is disposed on the circuit wiring layer 41, the pin 50 is wired by a metal wire and a circuit
  • the layer 41 is electrically connected to the power factor correction power switch module 30, the inverter bridge circuit 10 and the bridge arm drive circuit 20.
  • the pin 50 can be implemented by using a gull-wing pin 50 or an in-line pin 50. In this embodiment, it is preferably an in-line pin 50.
  • the pin 50 is soldered on a low thermal conductivity insulating substrate.
  • the pad position on the mounting position corresponding to the wiring layer 41 is electrically connected to the power component 10 through the metal wire 60.
  • each pin 50 is fixed on the mounting substrate 40, the other end of the pin 50 extends in a direction away from the mounting substrate 40, and the extension direction of the pin 50 is the same as that of the mounting substrate.
  • the plane where 40 is located is parallel.
  • the smart power module further includes a packaging casing 60 for packaging the power factor correction power switch module 30, the inverter bridge circuit 10, and the bridge arm drive circuit 20.
  • the packaging shell 60 can be made of epoxy resin, alumina, thermally conductive filler material, etc., wherein the thermally conductive filler material can be made of boron nitride, aluminum nitride, aluminum nitride and boron nitride. It has better insulation, higher thermal conductivity, better heat resistance and thermal conductivity, so that aluminum nitride and boron nitride have higher heat transfer capabilities.
  • materials such as epoxy resin, aluminum oxide, boron nitride, or aluminum nitride can be mixed, and then the mixed packaging material is heated; after cooling, the packaging material is crushed, Then use the ingot molding process to roll the material of the package housing 60 to form the package housing 60.
  • the power factor correction power switch module 30 the three-phase bridge arm circuit and the bridge arm drive circuit are packaged in the package housing 60 .
  • the power factor correction power switch module 30, the three-phase bridge arm circuit and the bridge arm drive circuit are packaged in the packaging shell 60 through an injection molding process.
  • the packaging shell 60 may be covered on the mounting substrate 40 and the power component. The bottom surface of the mounting substrate 40 is exposed outside the package, and the heat dissipation of the power element is accelerated. If the smart power module is further provided with a heat sink 70 to dissipate heat for the power device, the packaging shell 60 can be wrapped around the mounting substrate 40 and the outer periphery of the power component, so that the power module is integrated with the mounting substrate 40 and the power component Molding settings.
  • the smart power module further includes a heat sink disposed on the mounting substrate away from the power factor correction power switch module 30, a three-phase upper arm circuit 11 and one side of the three-phase lower arm circuit 12.
  • the heat sink 70 may be made of aluminum, aluminum alloy, and other materials with good heat dissipation effects, so that the heat generated by the power devices in the three-phase bridge arm circuit is conducted to the heat sink 70 through the mounting substrate 40 Above, the contact area between the heat generated by the power device and the air is further increased, and the heat dissipation rate is improved.
  • the radiator 70 may also be provided with a radiator 70 body and a plurality of radiating blades, and the plurality of radiating blades are arranged on one side of the body of the radiator 70 at intervals.
  • This configuration can increase the contact area between the radiator 70 and the air, that is, when the radiator 70 is working, the contact area between the heat and the air on the radiator 70 is increased, so as to accelerate the heat dissipation rate of the radiator 70.
  • the material of the radiator 70 can be reduced, and the cost of the radiator 70 due to excessive application of materials can be avoided.
  • the inverter bridge circuit 10 constitutes a compressor power module
  • the inverter bridge circuit 10 constitutes a wind turbine power module.
  • multiple power switch tubes are integrated in the compressor power module and the fan power module, and multiple power switch tubes form a drive inverter circuit.
  • six power switch tubes may form a three-phase inverter bridge circuit 10 , Or a two-phase inverter bridge circuit composed of four power switch tubes.
  • each power switch tube can be realized by MOS tube or IGBT.
  • a plurality of power switch tubes form the power inverter bridge circuit 10, which is used to drive loads such as fans and compressors.
  • each power switch tube After each power switch tube is set on the corresponding installation position of the circuit wiring layer 41, it can be wired with the circuit through conductive materials such as solder Layer 41 realizes electrical connection and forms a current loop.
  • Each power switch tube can also be attached to the corresponding mounting position of the circuit wiring layer 41 through a flip chip process, and a current loop is formed between the circuit wiring layer 41 and the metal binding wires and each circuit element.
  • the smart power module is also integrated with fault protection circuits such as overcurrent, overvoltage, and overheating (not shown in the figure).
  • the fault protection circuit can determine whether the fan is overcurrent by detecting the output current of the fan, and feedback the overcurrent protection signal to the main controller so that the main controller drives the intelligent power module to work according to the overcurrent protection signal output by the fault protection circuit.
  • the fault protection circuit can also realize the overvoltage protection of the compressor by detecting the DC bus voltage, and realize the overheat protection of the smart power module by detecting the temperature of the smart power module.
  • the circuit can use electronic components such as voltage sensors, temperature sensors, resistors, and comparators to form the above protection circuit.
  • the smart power module includes:
  • the first control signal receiving end and the second control signal receiving end receive the control signal output by the main controller 100;
  • the three-phase upper arm circuit 111, the controlled end of the three-phase upper arm circuit 111 is connected to the first control signal receiving end, and each phase of the three-phase upper arm circuit 111 includes Gallium nitride (GaN) type high electron mobility transistor (high electron mobility transistor), also known as GaN HEMT;
  • GaN Gallium nitride
  • high electron mobility transistor also known as GaN HEMT
  • the three-phase low-side circuit 112 the controlled end of the three-phase low-side circuit 112 is connected to the second control signal receiving end, and each phase of the three-phase low-side circuit 112 includes Gallium nitride type high electron mobility transistor.
  • the number of first control signal receiving ends is three, namely HO1, HO2, and HO3.
  • the first control signal receiving ends HO1, HO2, and HO3 respectively receive the first control ends UHIN and VHIN of the main controller 100.
  • the logic input signal output by WHIN, that is, the control signal; the number of second control signal receiving ends is also three, namely LO1, LO2, LO3, and the second control signal receiving ends HO1, HO2, HO3 receive the main controller respectively
  • the logic input signals output by the second control terminals ULIN, VLIN, and WLIN of 100 are control signals.
  • the smart power module further includes a third control signal receiving end power factor correction OUT, and the third control signal receiving end power factor correction OUT is connected to the power factor correction power switch module 30.
  • Each of the three-phase upper bridge arm circuit 111 and the three-phase lower bridge arm circuit 112, that is, the bridge arm switch tube, is implemented by using gallium nitride type high electron mobility transistors. Under the same on-resistance GaN (GaN) transistors, especially GaN The terminal capacitance of HEMT is low, and there is no reverse recovery loss caused by body diode, which can reduce switching loss. In addition, the switching speed of GaN transistors is faster than that of silicon-based switching tubes, so the overall switching performance is better than that of silicon-based switching tubes, and higher switching frequencies can be achieved, thereby maintaining reasonable switching losses while improving Power density and transient performance.
  • GaN gallium nitride type high electron mobility transistors.
  • GaN gallium nitride type high electron mobility transistors.
  • GaN gallium nitride type high electron mobility transistors.
  • GaN gallium nitride type high electron mobility transistors.
  • GaN gallium nitride type high electron mobility transistors
  • the three-phase upper arm circuit 111 and the three-phase lower arm circuit 112 use GaN HEMT is used as a switching element, the two-dimensional electronic gas characteristics of GaN HEMT, GaN HEMT does not require parallel FRD, and GaN The gate charge of HEMT is much less than that of IGBT, so there is no need to connect the gate to protect it.
  • the gate of the U-phase upper arm high electron mobility transistor 1121 is connected to the first control signal receiving terminal HO1; the gate of the V phase upper arm high electron mobility transistor 1122 is connected to the first control signal receiving terminal HO1.
  • the drain of the high electron mobility transistor 1121, the drain of the high electron mobility transistor 1122, and the drain of the high electron mobility transistor 1123 are connected, and serve as the high voltage input terminal of the smart power module 200 P and P are generally connected to 300V.
  • Three-phase lower-arm circuit 112 the gate of U-phase lower-arm high electron mobility transistor 2124 and the second control signal receiving terminal LO1; the gate of V-phase lower-arm high electron mobility transistor 2125 and the second control The signal receiving terminal LO2; the gate of the W-phase low-arm high electron mobility transistor 2126 and the second control signal receiving terminal LO3.
  • the source of the high electron mobility transistor 2124 serves as the U-phase low-voltage reference terminal UN of the smart power module 200; the source of the high electron mobility transistor 2125 serves as the V-phase low voltage of the smart power module 200 Reference terminal VN; the emitter of the high electron mobility transistor 2126 serves as the W-phase low voltage reference terminal WN of the smart power module 200.
  • the common end of the U-phase upper-arm high-electron mobility transistor 2121 and the U-phase lower-arm high-electron mobility transistor 2124 is the output end of the U-phase high-voltage region, and the V-phase upper-arm high-electron mobility transistor 2122 is under the V-phase
  • the common terminal of the bridge arm high electron mobility transistor 2125 is the output terminal V, W of the V-phase high voltage region
  • the common terminal of the phase upper arm high electron mobility transistor 2123 and the V phase lower arm high electron mobility transistor 2126 is the output terminal V of the V phase high voltage region.
  • the main controller 100 is the MCU.
  • the MCU integrates a logic controller, a memory, a data processor, etc., as well as software programs and/or modules that are stored on the memory and run on the data processor.
  • the MCU passes Run or execute the software programs and/or modules stored in the memory, and call the data stored in the memory, and output the corresponding control signals to the three-phase upper bridge circuit 111 and the three-phase lower bridge circuit 112, so that the three-phase upper The gallium nitride type high electron mobility transistors in the bridge arm circuit 111 and the three-phase lower bridge arm circuit 112 are turned on/off according to the received control signal to drive loads such as fans and compressors.
  • the driving voltage of the GaN HEMT is relatively small, and the control signal of the main controller 100 can be used directly as the GaN HEMT.
  • the HMET drive that is, the three-phase upper bridge arm circuit 111 and the three-phase lower bridge arm circuit 112 are directly controlled by the main controller 100, without setting up a bridge arm drive circuit, such as an HVIC chip, which can shorten the bridge arm circuit and the main
  • the line distance of the controller 100 can further increase the GaN
  • the response speed of the HEMT to the control signal output by the main controller 100 and the shortening of the line can also reduce the influence of the interference signal on the line on the operation of the bridge arm circuit.
  • the main controller 100 of this embodiment is independent of the smart power module 200.
  • the main controller 100 and the smart power module 200 are arranged on an electric control board and are electrically connected through circuit wiring or wires.
  • the main controller 100 can be integrated into the smart power module 200 to improve the integration of the smart power module.
  • Each single bare chip in the three-phase upper arm circuit 111 and the three-phase lower arm circuit 112 can be integrated into an independent chip, and then packaged again, and then integrated to make a highly integrated intelligent power module .
  • the present invention integrates the three-phase upper bridge arm circuit 111 and the three-phase lower bridge arm circuit 112 into the same package to form an intelligent power module.
  • Each phase bridge of the three-phase upper bridge arm circuit 111 and the three-phase lower bridge arm circuit 112 The arm drive circuits are all implemented by gallium nitride type high electron mobility transistors.
  • the gallium nitride type high electron mobility transistors are directly controlled by the main controller 100, and no driver IC is required to amplify the control signal of the main controller 100.
  • logic conversion and other processing are beneficial to improve the response speed of the three-phase upper bridge arm circuit 111 and the three-phase lower bridge arm circuit 112, thereby improving the working efficiency of the smart power module.
  • the smart power module further includes a power factor correction power switch module 30 and a third control signal receiving end power factor correction OUT for receiving the control signal output by the main controller 100
  • the power factor correction power switch module 30 includes a gallium nitride type high electron mobility transistor, and the base of the gallium nitride type high electron mobility transistor is connected to the third control signal receiving end power factor correction OUT.
  • the gallium nitride type high electron mobility transistor can be integrated in the smart power module, or the power factor correction circuit composed of diodes, inductors and other components can be integrated.
  • the power factor correction circuit may be a step-up type power factor correction circuit, or a step-down type power factor correction circuit, or a buck-boost type power factor correction circuit.
  • the power factor correction circuit adjusts the power factor of the DC power, and the adjusted DC power is output to the power input end of the inverter bridge circuit, so that each power module drives the corresponding load.
  • the adjusted direct current can also generate a working voltage of a control chip such as 5V to provide a working voltage for circuit modules such as the main controller 100.
  • Power switch module 30 uses GaN due to power factor correction
  • the high electron mobility transistor 3127 is used as a switching element, the two-dimensional electron gas characteristics of GaN HEMT, GaN HEMT does not require parallel FRD, and GaN
  • the gate charge of HEMT is much less than that of IGBT, so there is no need to connect the gate to protect it.
  • the driving voltage of GaN HEMT is small, and the control signal of the main controller 100 can be directly used as GaN HMET That is, the power factor correction power switch module 30 can be directly controlled by the main controller 100 without the need to provide a driving circuit for the power factor correction power switch module 30.
  • the line distance between the power factor correction power switch module 30 and the main controller 100 can be shortened, and the GaN of the power factor correction power switch module 30 can be improved.
  • the response speed of the high electron mobility transistor 3127 to the control signal output by the main controller 100, and the shortening of the circuit, can also reduce the interference signal on the circuit and the power factor correction of the GaN of the power switch module 30 The impact of HEMT work.
  • the power factor correction power switch module 30 uses the source power factor correction and the drain-VP of the GaN high electron mobility transistor 3127 to access the power factor correction inductor.
  • the switching frequency of the power factor correction power switch module 30 is much higher than the switching frequency of the bridge arm circuit.
  • the switching frequency of the power factor correction power switch module 30 is the switching frequency of each switch tube of the bridge arm circuit. If the drive signal of the power factor correction power switch module 30 is integrated into the drive chip, the power factor correction power switch module 30 is likely to cause serious electromagnetic interference to the bridge arm circuit, and affect the normal operation of the bridge arm circuit.
  • the power factor correction power switch module 30 and the three-phase bridge arm circuit of the embodiment are directly controlled by the main controller 100, which can also reduce the interference of the power factor correction power switch module 30 to the three-phase bridge arm circuit.
  • This application also proposes an air conditioner, which includes an electric control board (not shown in the figure), a main controller (not shown in the figure), and the above-mentioned intelligent power module; the main controller settings and the The smart power module is arranged on the electric control board, and is electrically connected through circuit wiring arranged on the electric control board.
  • the smart power module please refer to the above-mentioned embodiment, which will not be repeated here; it is understandable that since the above-mentioned smart power module is used in the air conditioner of the present application, the embodiment of the air conditioner of the present application includes the above All the technical solutions of all the embodiments of the power module, and the achieved technical effects are also completely the same, which will not be repeated here.

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Inverter Devices (AREA)

Abstract

La présente invention concerne un module d'alimentation intelligent et un climatiseur, le module d'alimentation intelligent comprenant : une première extrémité de réception de signal de commande et une seconde extrémité de réception de signal de commande, qui reçoivent des signaux de commande émis par un dispositif de commande principal ; un module d'interrupteur d'alimentation à correction de facteur de puissance, qui comprend un transistor à haute mobilité d'électrons au nitrure de gallium, une électrode de base du transistor à haute mobilité d'électrons au nitrure de gallium étant connectée à la première extrémité de réception de signal de commande ; un circuit de pont onduleur ; et un circuit d'attaque de bras de pont, une extrémité d'entrée de signal logique du circuit d'attaque de bras de pont étant connectée à la seconde extrémité de réception de signal de commande, et une pluralité d'extrémités de sortie du circuit d'attaque de bras de pont étant connectées de façon biunivoque à des extrémités commandées du circuit de pont onduleur. La présente invention réduit le volume du module d'alimentation intelligent et la zone occupée par le module d'alimentation intelligent sur une carte de commande électronique.
PCT/CN2019/111578 2019-05-30 2019-10-17 Module d'alimentation intelligent et climatiseur WO2020237978A1 (fr)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
CN201910468142.3A CN110138249B (zh) 2019-05-30 2019-05-30 智能功率模块及空调器
CN201910468337.8 2019-05-30
CN201910468142.3 2019-05-30
CN201910468337.8A CN110148594B (zh) 2019-05-30 2019-05-30 智能功率模块及空调器

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Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN208240659U (zh) * 2018-06-13 2018-12-14 广东美的制冷设备有限公司 高集成智能功率模块及空调器
CN109560693A (zh) * 2018-12-29 2019-04-02 广东美的制冷设备有限公司 电器、功率器件及其形成方法
US20190115914A1 (en) * 2017-10-05 2019-04-18 Rohm Co., Ltd. Driving circuit for output transistor
CN109713912A (zh) * 2018-12-29 2019-05-03 广东美的制冷设备有限公司 用于空调器的功率集成模块及其制造方法
CN110138249A (zh) * 2019-05-30 2019-08-16 广东美的制冷设备有限公司 智能功率模块及空调器
CN110148594A (zh) * 2019-05-30 2019-08-20 广东美的制冷设备有限公司 智能功率模块及空调器

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Publication number Priority date Publication date Assignee Title
US20190115914A1 (en) * 2017-10-05 2019-04-18 Rohm Co., Ltd. Driving circuit for output transistor
CN208240659U (zh) * 2018-06-13 2018-12-14 广东美的制冷设备有限公司 高集成智能功率模块及空调器
CN109560693A (zh) * 2018-12-29 2019-04-02 广东美的制冷设备有限公司 电器、功率器件及其形成方法
CN109713912A (zh) * 2018-12-29 2019-05-03 广东美的制冷设备有限公司 用于空调器的功率集成模块及其制造方法
CN110138249A (zh) * 2019-05-30 2019-08-16 广东美的制冷设备有限公司 智能功率模块及空调器
CN110148594A (zh) * 2019-05-30 2019-08-20 广东美的制冷设备有限公司 智能功率模块及空调器

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