WO2020237637A1

WO2020237637A1 - Data reading method, storage controller, and electronic device

Info

Publication number: WO2020237637A1
Application number: PCT/CN2019/089569
Authority: WO
Inventors: 夏天; 贾学超; 陈一帆
Original assignee: 华为技术有限公司
Priority date: 2019-05-26
Filing date: 2019-05-31
Publication date: 2020-12-03
Also published as: CN113874942A

Abstract

Disclosed in the present application is a solid state drive data reading method, comprising: a controller receives a read request sent by a host and comprising location indication information of requested data; determine, according to a target physical location indicated by the location indication information, a target read voltage model corresponding to a target storage area where the target physical location is located, each storage area in a non-volatile storage medium comprising multiple target storage units divided according to target division granularity, and a read voltage model being a function related to the identifier of a target storage unit; obtain a parameter value of the target read voltage model from correspondences between storage areas and parameter values of read voltage models; determine a read voltage corresponding to the target physical location according to the identifier of a target storage unit where the target physical location is located, the target read voltage model, and the parameter value of the target read voltage model; obtain the requested data and send same to the host according to the read voltage corresponding to the target physical location.

Description

Data reading method, storage controller and electronic equipment

This application claims the priority of the patent application filed on May 26, 2019 and the application number is PCT/CN2019/088460, the entire content of which is incorporated into this application by reference.

Technical field

This application relates to the field of data storage technology, and in particular to a data reading method, a storage controller and an electronic device.

Background technique

Solid state drive (SSD) refers to storage media such as hard disks or memory cards made of solid-state electronic storage chip arrays. The quality of service (QoS) of SSDs is to provide stable, consistent and reliable SSD products to the host. The ability of predictive request response service is one of the key factors that shape the competitiveness of SSD products. SSDs can be used in scenarios such as data centers and servers. Read latency is a key performance indicator of QoS, which mainly depends on the number of read operations that occur in flash media in response to host requests. Flash is the main storage medium of SSD. Its characteristics are affected by many factors such as program/erase cycles (PE), data retention time (retention time), etc. The voltage signal carrying data will send drift, which requires more Only the second read operation can successfully respond to the host request, which results in a longer read delay in QoS.

At present, in the prior art, the read voltage pre-metering technology can be used to reduce the read delay, that is, by analyzing the relationship between the factors that affect the read voltage and the voltage offset, making the influencing factors and the read voltage compensation table, or summarizing specific When using the formula, look up the table according to the influencing factor value or compensate the reading voltage after calculation, thereby improving the first reading success rate and reducing the reading delay. However, the voltage pre-metering technology is related to the sampled samples. For different storage media, different voltage-reading pre-meters need to be made, which requires a lot of work. In addition, the storage medium will change during use, the reliability of using the read voltage pre-metering technology is low, and the first read success rate is limited, so the effect of reducing the read delay is not good.

Summary of the invention

This application provides a data reading method, a storage controller and an electronic device to solve the problem of long reading delay in the prior art.

In the first aspect, this application provides a data reading method, which is applied to a controller, where the front end of the controller is used to connect to the host, and the back end of the controller is used to connect to a non-volatile storage medium. The method includes: a controller receives a read request sent by a host, the read request includes location indication information of the requested data; the controller determines a target corresponding to the target storage area where the target physical location is located according to the target physical location indicated by the location indication information Read the voltage model, where the target physical location is the physical location of the requested data in the non-volatile storage medium, the non-volatile storage medium includes one or more storage areas, and each storage area includes multiple non-volatile storage media according to The target storage unit obtained by the granularity of target division, the read voltage model is a function of the identification of the target storage unit; the controller obtains the corresponding relationship of the target storage area from the corresponding relationship between the storage area and the parameter value of the read voltage model according to the target storage area The parameter value of the target read voltage model, where, in the corresponding relationship between the storage area and the parameter value of the read voltage model, one storage area corresponds to one or more parameters of the read voltage model; the controller is based on the target storage unit where the target physical location is located The parameter values of the target reading voltage model, the target reading voltage model, and the target reading voltage model determine the reading voltage corresponding to the target physical position; the controller obtains the request data according to the reading voltage corresponding to the target physical position, and sends the request data to the host.

Through the above solution, the controller can determine the target read voltage model corresponding to the target storage area where the target physical location is located according to the target physical location indicated by the location indication information of the request data in the read request sent by the host, and according to the target storage area, Obtain the parameter value of the target read voltage model corresponding to the target storage area from the corresponding relationship between the parameter value of the storage area and the read voltage model, and then can be based on the target physical location of the target storage cell identification, target read voltage model and target read voltage The parameter value of the model determines the read voltage corresponding to the target physical location, where the read power model is a function of the identification of the target storage unit. In the embodiment of the present application, different storage areas in the non-volatile storage medium correspond to different parameter values of the read voltage model, which is equivalent to dividing the read voltage model corresponding to the non-volatile storage medium into multiple parts, each part Using the respective corresponding read voltage models and the parameter values of the read voltage models to characterize, in turn, the accuracy of the read voltage calculated according to the read voltage model corresponding to each storage area can be improved, and the delay of the read operation can be reduced.

In addition, the controller determines the read voltage corresponding to the target physical location according to the identification of the target storage unit where the target physical location is located, the target read voltage model, and the parameter value of the target read voltage model. The controller only needs to store the read voltages corresponding to different storage areas. The parameter value of the model does not need to store the specific reading voltage value, which can reduce the storage space overhead.

In a possible implementation manner, the controller may obtain the parameter value of the target read voltage model corresponding to the target storage area in the following manner: when the corresponding relationship between the storage area and the parameter value of the read voltage model, the target storage area corresponds to multiple When reading the parameter values of the voltage model, the controller selects one or more of the parameter values of the multiple read voltage models corresponding to the target storage area according to the target physical location as the target read voltage model parameters.

In a possible implementation manner, the controller can specifically determine the target read voltage model corresponding to the target storage area where the target physical location is located: the controller reads the voltage model from the storage area according to the target physical location indicated by the location indication information. In the corresponding relationship, determine the target read voltage model corresponding to the target storage area where the target physical location is located.

In a possible implementation, the read voltage model is a model determined according to the read voltage characteristics of the target storage cell in the nonvolatile storage medium, and the target division granularity is based on the structure of the nonvolatile storage medium and different division granularity in the nonvolatile storage medium. The read voltage characteristics of the lower memory cell are determined.

In a possible implementation manner, the read voltage model is used to characterize the correspondence between the identifier of the target memory cell and the optimal read voltage.

In a possible implementation manner, in a scenario where the parameter value of the target read voltage model includes the coefficient of the target storage unit's identification in the function related to the target storage unit's identification and the value of the constant term in the function related to the target storage unit's identification , The controller can determine the read voltage corresponding to the target physical location by the following method: the controller determines the read voltage in the target storage area and the identification location of the target storage unit in the target storage area according to the target read voltage model and the parameter values of the target read voltage model. The satisfied function calculates the read voltage corresponding to the target physical location according to the identifier of the target storage unit where the target physical location is located and the function satisfied by the read voltage in the target storage area and the identifier of the target storage unit in the target storage area.

In a possible implementation, the read voltage corresponding to the non-volatile storage medium may drift due to multiple factors such as the number of erasing and writing, the data retention time, the number of read operations, and the temperature. Therefore, in order to further improve the determination of the controller The controller must also update the parameter values of the reading voltage model corresponding to the storage area in the non-volatile storage medium online, so that the parameter values of the reading voltage model can accurately follow the reading of the non-volatile storage medium. The voltage changes. Specifically, when any one of each storage area in the non-volatile storage medium satisfies the preset update condition, the controller updates the value of the read voltage model corresponding to the storage area in the corresponding relationship between the storage area and the parameter value of the read voltage model. Parameter value.

In a possible implementation manner, when the controller is in the system idle time window or meets the preset update period, the controller determines the first error parameter under the reading voltage corresponding to any one in each storage area; when the first error parameter When it is greater than or equal to the first threshold, the controller updates the parameter value of the read voltage model corresponding to the storage area in the corresponding relationship between the storage area and the parameter value of the read voltage model.

In a possible implementation manner, the preset update period is related to the use state of the storage area; or, the preset update period is related to the average service life of the multiple storage areas included in the nonvolatile storage medium.

In a possible implementation manner, for any storage area in the corresponding relationship between the storage area and the parameter values of the read voltage model, when the storage area corresponds to the parameter values of multiple read voltage models, the storage area corresponds to multiple read voltage models. Among the parameter values, the parameter values of multiple read voltage models that meet the set conditions are compressed into a read voltage model. The set condition is that the parameter values of the read voltage model are the same or nearly flat, which is equivalent to the storage area and the read voltage model. The corresponding relationship between the parameter values of the read voltage model is compressed, which can reduce the storage content in the corresponding relationship between the storage area and the parameter value of the read voltage model, and reduce the storage space occupied by the parameter value of the read voltage model, thereby saving the storage of the controller space.

In a possible implementation, when the controller performs a rewriting or erasing operation on the data in a storage area, the influence of factors such as the number of erasing and writing, the data retention time, and the number of read operations on the read voltage will be reset, so After the controller performs a rewriting or erasing operation on the data in a storage area, it also needs to initialize the parameter value of the read voltage model corresponding to the storage area. Specifically, after the controller performs a rewriting or erasing operation on the data in a storage area, it initializes the parameter values of the read voltage model corresponding to the storage area where the rewriting operation or the erasing operation is performed to the set value, where: The set value is a default value (pre-configured in the controller) or a pre-configured preset value determined according to the read voltage characteristics of the storage area where the rewriting operation or the erasing operation is performed.

In a possible implementation, the target storage unit may be a physical unit in a non-volatile storage medium, specifically any of die, plane, block, string, layer, page, etc. . Alternatively, the target storage unit may also be a logical unit formed after logical abstraction of the physical unit in the non-volatile storage medium. The location of the physical unit in a logical unit may be continuous or discontinuous. Specifically, it may be composed of multiple dies. The storage unit is a storage unit composed of multiple planes, or a storage unit composed of multiple blocks; a storage unit composed of multiple strings; a storage unit composed of multiple layers, or a storage unit composed of multiple pages Storage unit, etc.

In the second aspect, the present application provides a storage controller, the front end of the controller is used to connect to a host, and the back end of the controller is used to connect to a non-volatile storage medium. The storage controller includes: a receiving unit, a processing unit, and a sending unit. The receiving unit is used to receive a read request sent by the host, and the read request includes location indication information of the requested data; the processing unit is used to determine the target storage where the target physical location is located according to the target physical location indicated by the location indication information The target read voltage model corresponding to the area, where the target physical location is the physical location of the requested data in the non-volatile storage medium. The non-volatile storage medium includes one or more storage areas, and each storage area includes multiple non-volatile storage areas. The target storage medium is divided into the target storage unit according to the target division granularity, the read voltage model is a function of the identification of the target storage unit; according to the target storage area, the target storage is obtained from the corresponding relationship between the storage area and the parameter value of the read voltage model The parameter value of the target read voltage model corresponding to the area, where, in the corresponding relationship between the storage area and the parameter value of the read voltage model, a storage area corresponds to one or more parameters of the read voltage model; according to the target storage unit where the target physical location is located To determine the reading voltage corresponding to the target physical position; and obtain the request data according to the reading voltage corresponding to the target physical position; the sending unit is used to send the request data to Host.

In a possible implementation manner, when the processing unit obtains the parameter value of the target read voltage model corresponding to the target storage area from the corresponding relationship between the storage area and the parameter value of the read voltage model according to the target storage area, it is specifically used for: In the correspondence relationship between the storage area and the parameter values of the read voltage model, when the target storage area corresponds to the parameter values of multiple read voltage models, according to the target physical location, select one or the parameter values from the target storage area corresponding to the multiple read voltage models. Multiple, as the target read voltage model parameters.

In a possible implementation manner, when the processing unit determines the target read voltage model corresponding to the target storage area where the target physical location is located according to the target physical location indicated by the location indication information, it is specifically used to: according to the target indicated by the location indication information The physical location determines the target read voltage model corresponding to the target storage area where the target physical location is located from the corresponding relationship between the storage area and the read voltage model.

In a possible implementation manner, the read voltage model is used to characterize the correspondence between the identification of the target memory cell and the optimal read voltage.

In a possible implementation manner, the parameter value of the target read voltage model includes the coefficient of the identifier of the target storage unit in the function of the identifier of the target storage unit and the value of the constant term in the function of the identifier of the target storage unit. . When the processing unit determines the read voltage corresponding to the target physical location according to the identifier of the target storage unit where the target physical location is located, the target read voltage model, and the parameter values of the target read voltage model, it is specifically used to: according to the target read voltage The model and the parameter values of the target read voltage model determine the function satisfied by the read voltage in the target storage area and the identification of the target storage cell in the target storage area; according to the identification of the target storage cell where the target physical location is located and the target storage area Calculate the read voltage corresponding to the target physical location by reading the function satisfied by the read voltage and the identification of the target storage cell in the target storage area.

In a possible implementation manner, the processing unit is further configured to: when any one of each storage area meets the preset update condition, update the reading voltage corresponding to the storage area in the corresponding relationship between the storage area and the parameter value of the read voltage model The parameter value of the model.

In a possible implementation manner, the processing unit is specifically configured to: when the storage controller is in a system idle time window or meets a preset update period, determine the first reading voltage corresponding to any one of the storage areas. An error parameter; when the first error parameter is greater than or equal to the first threshold, the parameter value of the read voltage model corresponding to the storage area in the corresponding relationship between the storage area and the parameter value of the read voltage model is updated.

In a possible implementation manner, for any storage area in the corresponding relationship between the storage area and the parameter values of the read voltage model, when the storage area corresponds to the parameter values of multiple read voltage models, the storage area corresponds to multiple read voltage models. Among the parameter values, the parameter values of multiple read voltage models that meet the set conditions are compressed into one read voltage model, and the set conditions are that the parameter values of the read voltage models are the same or nearly flat.

In a possible implementation manner, the processing unit is further configured to: after performing a rewriting or erasing operation on the data in one of the storage areas, the parameters of the read voltage model corresponding to the storage area where the rewriting or erasing operation is performed The value is initialized to a set value; wherein, the set value is a default value or a pre-configured preset value determined according to the read voltage characteristics of the storage area where the rewrite operation or the erase operation is performed.

In a possible implementation manner, when the processing unit performs a rewriting operation or an erasing operation on data in a storage area, it is specifically used to: perform a rewriting operation or an erasing operation on all data in a storage area.

In a third aspect, this application provides an electronic device, which includes a communication interface, a controller, and a memory. Wherein, the communication interface is used to receive the read request sent by the host, and the read request includes the location indication information of the requested data; the memory stores code instructions; the controller is used to call the code instructions stored in the memory to execute: The target physical location indicated by the location indication information determines the target read voltage model corresponding to the target storage area where the target physical location is located, where the target physical location is the physical location of the requested data in the non-volatile storage medium. The medium includes one or more storage areas, and each storage area includes multiple target storage units that are obtained by dividing the nonvolatile storage medium according to the target division granularity. The read voltage model is a function of the identification of the target storage unit; according to the target storage area, From the corresponding relationship between the storage area and the parameter value of the read voltage model, obtain the parameter value of the target read voltage model corresponding to the target storage area. Among the corresponding relations between the storage area and the parameter value of the read voltage model, one storage area Correspond to the parameters of one or more read voltage models; determine the read voltage corresponding to the target physical location according to the identification of the target storage unit where the target physical location is located, the target read voltage model, and the parameter values of the target read voltage model; correspond to the target physical location Read the voltage of, to obtain the requested data; the communication interface is also used to: send the requested data to the host.

In a possible implementation manner, when the controller obtains the parameter value of the target read voltage model corresponding to the target storage area from the corresponding relationship between the storage area and the parameter value of the read voltage model according to the target storage area, it is specifically used to: In the correspondence relationship between the storage area and the parameter values of the read voltage model, when the target storage area corresponds to the parameter values of multiple read voltage models, according to the target physical location, select one or the parameter values from the target storage area corresponding to the multiple read voltage models. Multiple, as the target read voltage model parameters.

In a possible implementation manner, when the controller determines the target read voltage model corresponding to the target storage area where the target physical location is located according to the target physical location indicated by the location indication information, it is specifically used to: according to the target indicated by the location indication information The physical location determines the target read voltage model corresponding to the target storage area where the target physical location is located from the corresponding relationship between the storage area and the read voltage model.

In a possible implementation manner, the parameter value of the target read voltage model includes a coefficient of the identification of the target storage unit in the function of the identification of the target storage unit and the value of a constant term in the function of the identification of the target storage unit. When the controller determines the reading voltage corresponding to the target physical location according to the target storage unit identification, the target read voltage model, and the parameter values of the target read voltage model, it is specifically used to: according to the target read voltage model and the target read voltage model. The parameter value of the voltage model determines the function satisfied by the read voltage in the target storage area and the identification of the target storage cell in the target storage area; according to the identification of the target storage cell where the target physical location is located and the read voltage in the target storage area and the target storage area Calculate the read voltage corresponding to the target physical location based on the function satisfied by the identification of the target storage unit.

In a possible implementation manner, the controller is further configured to: when any one of the storage areas meets the preset update condition, update the corresponding storage area in the corresponding relationship between the storage area and the parameter value of the read voltage model Read the parameter values of the voltage model.

In a possible implementation manner, when the controller updates the parameter value of the read voltage model corresponding to the storage area in the corresponding relationship between the storage area and the parameter value of the read voltage model, it is specifically used to: when the controller is in the system idle time When the window or meets the preset update period, determine the first error parameter under the read voltage corresponding to any one of each storage area; when the first error parameter is greater than or equal to the first threshold, update the storage area and the read voltage model The parameter value of the read voltage model corresponding to the storage area in the parameter value correspondence relationship.

In a possible implementation manner, the preset update period is related to the usage state of the storage area; or, the preset update period is related to the average service life of a plurality of storage areas included in the nonvolatile storage medium.

In a possible implementation manner, the controller is further configured to: after performing a rewriting or erasing operation on the data in one of the storage areas, the parameters of the read voltage model corresponding to the storage area where the rewriting or erasing operation is performed The value is initialized to a set value, where the set value is a default value or a pre-configured preset value determined according to the read voltage characteristics of the storage area where the rewrite operation or the erase operation is performed.

In a possible implementation manner, when the controller performs a rewriting operation or an erasing operation on the data in one storage area, it is specifically used for: performing a rewriting operation or an erasing operation on all data in a storage area.

In a fourth aspect, the present application provides a communication system that includes a host, a controller, and a non-volatile storage medium. The non-volatile storage medium includes one or more storage areas, and each storage area includes multiple non-volatile storage areas. The target storage medium is divided into target storage units according to the target division granularity, and the read voltage model is a function of the identification of the target storage unit. The host is used to send a read request to the controller and receive request data returned by the controller, and the read request includes location indication information of the requested data. The controller is configured to receive the read request sent by the host, and determine the target read voltage model corresponding to the target storage area where the target physical location is located according to the target physical location indicated by the location indication information in the read request, where the target physical location is The physical location of the requested data in the non-volatile storage medium; according to the target storage area, the parameter value of the target read voltage model corresponding to the target storage area is obtained from the corresponding relationship between the storage area and the parameter value of the read voltage model; according to the target physical The identification of the target storage unit where the location is located, the target read voltage model, and the parameter values of the target read voltage model to determine the read voltage corresponding to the target physical location; and, according to the read voltage corresponding to the target physical location, obtain the requested data, and request the data Send to the host.

In a fifth aspect, the present application also provides a computer-readable storage medium having computer-executable instructions stored on the computer storage medium. When the instructions are run on a computer, the computer executes the above-mentioned first aspect. Any one of the methods provided by the implementation.

In a sixth aspect, the present application also provides a computer program product containing instructions, which when the instructions run on a computer, cause the computer to execute the method provided by any one of the implementation manners in the first aspect.

It is understandable that any device, computer storage medium, or computer program product of the data reading method provided above is used to execute the corresponding method provided above. Therefore, the beneficial effects that can be achieved can refer to the above The beneficial effects of the provided corresponding methods will not be repeated here.

Description of the drawings

FIG. 1 is a schematic structural diagram of a TLC storage particle provided by an embodiment of the application;

FIG. 2 is a schematic structural diagram of a communication system provided by an embodiment of this application;

FIG. 3 is a schematic structural diagram of another communication system provided by an embodiment of this application;

4 is a schematic flowchart of a data reading method provided by an embodiment of this application;

5 is a schematic diagram of the relationship between a storage area and a target storage unit in a nonvolatile storage medium provided by an embodiment of the application;

FIG. 6a is a schematic diagram of a parameter value storage method of a TLC NAND read voltage model provided by an embodiment of the application;

FIG. 6b is a schematic diagram of a parameter value storage mode of a QLC NAND read voltage model provided by an embodiment of the application;

FIG. 7 is a schematic diagram of another method of storing parameter values of a TLC NAND read voltage model provided by an embodiment of the application;

8 is a schematic flowchart of a method for establishing a read voltage model corresponding to a non-volatile storage medium according to an embodiment of the application;

FIG. 9a is a schematic diagram of a process for updating parameter values of a read voltage model according to an embodiment of the application;

FIG. 9b is a schematic diagram of another process for updating the parameter values of the read voltage model according to an embodiment of the application;

10 is a schematic diagram of a process for calculating parameter values of a read voltage model provided by an embodiment of the application;

FIG. 11 is a schematic structural diagram of a storage controller provided by an embodiment of this application;

FIG. 12 is a schematic structural diagram of an electronic device provided by an embodiment of this application.

Detailed ways

Currently, most storage devices use SSDs for data storage, such as hard drives or memory cards. SSD QoS is the ability of storage devices to provide stable, consistent and predictable request response services to hosts, and it is one of the key factors affecting the market competitiveness of storage devices. QoS can include multiple performance indicators. The read response time is a key performance indicator of QoS, which mainly depends on the number of read operations that occur in the flash medium in response to the host request. As the main storage medium of SSD, the characteristics of flash media are affected by many factors such as the number of erasing and writing, data retention time, and the number of read operations. The voltage signal carrying the data will send drift, so that the backend requires multiple read operations ( Trial and error) can successfully respond to the host request, thus affecting the QoS read delay index, resulting in a longer read delay.

With the higher storage density of the cell (cell) is three-dimension (3-dimension, 3D) each cell stores x bit (x is an integer greater than 2) memory (x-level cell, xLC) (such as each cell storage 3bit memory (triple-level cell, TLC) and each cell storage 4bit memory (quad-level cell, QLC), etc.) gradually replace the two-dimensional (2-dimension, 2D) each cell storage 2bit memory MLC (multi -level cell) has become a mainstream storage medium, and the read delay index of QoS is facing more and more challenges. As shown in Fig. 1, an internal hierarchical structure diagram of a TLC particle provided in an embodiment of this application. Among them, the smallest unit of the write operation is page, which can be divided into three types, namely upper page, middle page and lower page (for QLC particles, page can be divided into These are top page, upper page, middle page and lower page). A previous page, a middle page, and a next page can form a word line (WL), and several WLs form layers or strings in different directions. For example, the horizontal multiple lines in Figure 1 A WL forms a layer, and multiple WLs in a vertical direction form a string. The smallest erase operation unit composed of pages is called a block. Multiple blocks form a plane, and multiple planes can form a die. Multiple dies form a package.

In addition, in many applications, the controller composes some blocks into super blocks. The characteristic of a super block in an application is that the internal blocks will be erased or programmed at the same time. The usage conditions of the blocks in the super block are consistent or close, such as the number of erasing and writing, and the data retention time.

Compared with 2D MLC, 3D xLC increases the logic state in each cell from 4 (2bit) to 2 ^x (x bit), and the voltage signal window for distinguishing different logic states becomes smaller, so that the voltage reading is accurate Degree requirements are increased. In addition, the number of pages in the block and the number of blocks in the die gradually increase, and the physical inconsistency of each level within the flash increases, and it becomes more and more difficult to set a uniform effective read voltage for all pages.

In order to solve the above-mentioned problems, the present application provides a data reading method, a storage controller and an electronic device to reduce the reading delay.

It should be noted that the multiple involved in this application refers to two or more. In order to make the objectives, technical solutions, and advantages of the present application clearer, the present application will be further described in detail below with reference to the accompanying drawings.

Figure 2 is a hardware architecture diagram of a communication system applied in an embodiment of this application. As shown in Figure 2, the system includes a host, an SSD controller, and a flash array. The host can store/fetch the flash in the SSD through the SSD controller. The data in the array. Among them, the host can use non-volatile memory host controller interface (non-volatile memory express, NVMe)/serial attached small computer system interface (serial attached SCSI (SCSI is the abbreviation of small computer system interface), SAS)/fast The peripheral component interconnect express (PCIe) interface and other interfaces are connected to the front end of the SSD controller. The back end of the SSD controller can be connected to the flash array through the NAND flash interface (NFI), and the host is connected through the SSD The controller performs operations such as reading, writing or erasing the data in the flash array.

In addition, the embodiments of the present application can also be applied to the hardware architecture of another communication system as shown in FIG. 3. The controller in this system is similar to the SSD controller in the system shown in Figure 2. The difference is that the controller and flash array in the system are packaged into independent chips, and the host communicates with the controller through interfaces such as universal flash storage (UFS)/embedded multimedia card (eMMC), etc. Connect and access data through the interface. Exemplarily, a chip packaged by a controller and a flash array can be applied to mobile terminals such as mobile phones, tablet computers, and wearable devices.

As shown in Figure 4, a data reading method provided by an embodiment of the present application is applied to a controller. The front end of the controller is used to connect to the host, and the back end of the controller is used to connect to a non-volatile storage medium. Volatile storage media can be 3D NAND flash, 2D NAND flash and other flash-based storage media, as well as magnetic random access memory (MRAM), resistance random access memory (RRAM), phase change memory ( Phase change random access memory (PCRAM), ferroelectric random access memory (FRAM), and nanotube random access memory (NRAM) and other new non-volatile storage media. This method can be applied to the communication system shown in FIG. 2 or FIG. 3, and mainly includes the following steps:

S401: The controller receives a read request sent by the host, where the read request includes location indication information of requested data.

Among them, when the host needs to read certain data from the non-volatile storage medium managed by the controller, the host can send a read request to the controller. The data requested by the read request can be called request data. In the read request Can carry location indication information. The location indication information can be used to indicate the logical address, that is, the logical address used by the host to access the requested data, such as the logical page address (logical page address, LPA). There is a mapping relationship between the logical address and the physical address. The logical address can determine the physical location of the requested data in the non-volatile storage medium. In practical applications, the location indication information can also be other information that has a corresponding relationship with the physical location. For example, the location indication information can be a key value, and the corresponding relationship can be obtained through the preset corresponding relationship between the key value and the value value. This value can be the physical location of the data, which is not limited in the embodiment of the application.

For example, when the non-volatile storage medium is 3D NAND TLC memory, the read request received by the controller may include one or more LPAs, and the controller uses the mapping relationship between LPA and physical page number (PPN) , Determine the PPN corresponding to each LPA, and then determine the page number, layer number, block number, plane number, die number, and channel number according to the PPN corresponding to each LPA to characterize the data requested by the host in the nonvolatile storage medium Physical location information.

Specifically, when the controller receives a read request sent by the host, the controller can obtain the physical address of the requested data stored in the non-volatile storage medium according to the location indication information, where the physical address of the requested data is referred to as the target physical address. position.

S402: The controller determines the target read voltage model corresponding to the target storage area where the target physical location is located according to the target physical location indicated by the location indication information. Among them, the target physical location is the physical location of the requested data in the non-volatile storage medium. The non-volatile storage medium includes one or more storage areas, and each storage area includes multiple non-volatile storage media. For the obtained target storage cell, the read voltage model is a function of the identification of the target storage cell (such as the number of the target storage cell).

The relationship between the non-volatile storage medium, the storage area and the target storage unit is shown in Figure 5. The non-volatile storage medium includes at least one storage area, each storage area includes multiple target storage units, and each target storage unit can Represented by corresponding physical locations, multiple physical locations included in a storage area may be physical locations corresponding to at least one target storage unit included in the storage area. It should be noted that this application does not limit the number of target storage cells included in each storage area. The number of target storage cells included in each storage area is mainly determined according to the read voltage characteristics of the target storage cell. The characteristics of the read voltage in each storage area continuously change with respect to the identification of the target storage cell, so the number of target storage cells included in each storage area may be the same or different.

Further, the target storage unit may be a physical unit in a non-volatile storage medium, and specifically may be any one of die, plane, block, string, layer, and page. Alternatively, the target storage unit may also be a logical unit formed after logical abstraction of the physical unit in the non-volatile storage medium. The location of the physical unit in a logical unit may be continuous or discontinuous. Specifically, it may be composed of multiple dies. The storage unit is a storage unit composed of multiple planes, or a storage unit composed of multiple blocks; a storage unit composed of multiple strings; a storage unit composed of multiple layers, or a storage unit composed of multiple pages Storage unit, etc.

The read voltage refers to the corresponding conversion voltage when converting from an analog signal to a data signal. The read voltage characteristics can refer to different conditions (for example, different temperatures, different times, different PEs, different data retention times, and different read counts). Under )), when using different devices to read the voltage, the corresponding error parameter changes. In a specific implementation, the read voltage model is used to characterize the corresponding relationship between the identification of the target memory cell and the optimal read voltage. Among them, the read voltage model is a function of the identification of the target memory cell, which is used to characterize the law that the read voltage changes with the identification of the target memory cell. It is a qualitative description of the read voltage, rather than a quantitative description. For example, when the read voltage model is a linear model, it means that the read voltage changes linearly with the change of the identifier of the target memory cell. The read voltage model can be a linear model or a non-linear model. It can be expressed by the functional relationship between the optimal read voltage and the identification of the target memory cell. For example, when the read voltage model is a linear model, the optimal read voltage and the identification of the target memory cell The functional relationship of is a linear function, which can be expressed as y=ax+b, where y represents the optimal read voltage, x represents the identification of the target memory cell, and a and b are the parameter values of the read voltage model. The identification of the target storage unit is usually represented by the number of the target storage unit. The number of the target storage unit can be represented by a continuous number or a discontinuous number. For example, the number of the target storage unit can be 1, 2, 3..., N (N is a positive integer), or the number of the target storage unit can be a number that changes according to a specific law (arithmetic sequence or geometric sequence, etc.), representing 1, 3, 5...2N-1, etc.

S403: The controller obtains the parameter value of the target read voltage model corresponding to the target storage area from the corresponding relationship between the storage area and the parameter value of the read voltage model according to the target storage area.

Wherein, in the corresponding relationship between the storage area and the parameter value of the read voltage model, one storage area corresponds to one or more parameters of the read voltage model. The corresponding relationship between the storage area and the parameter value of the read voltage model can be stored in the controller in the form of a table. The table can include the identification corresponding to the storage area. The identification of the storage area and the parameter value of the read voltage model are stored in a one-to-one correspondence. In the table; the table may not save the storage area identification, and the parameter values of the read voltage model are arranged according to the index value of the storage area corresponding to the parameter value of the read voltage model, and the index value corresponding to the storage area is based on the physical location of the storage area Determine to reduce the entries in the table, thereby reducing the storage space occupied by the table.

For any one of the storage areas in the corresponding relationship between the storage area and the parameter value of the read voltage model, the storage area may correspond to one or more read voltage model parameters. For example, for TLC NAND, one storage area corresponds to the parameter values of seven read voltage models. When the read voltage model is a linear model, and the parameter values of the read voltage model are represented by a and b respectively, the parameter values of these seven read voltage models They are respectively marked as r1a, r1b, r2a, r2b, r3a, r3b, r4a, r4b, r5a, r5b, r6a, r6b and r7a, r7b. The storage format in the corresponding relationship between the storage area and the parameter value of the read voltage model can be As shown in Figure 6a. For another example, for QLC NAND, one storage area corresponds to the parameter values of 15 read voltage models. When the read voltage model is a linear model, and the parameter values of the read voltage model are represented by a and b respectively, the parameters of these 15 read voltage models Respectively denoted as r1a, r1b, r2a, r2b, r3a, r3b, r4a, r4b, r5a, r5b, r6a, r6b..., r15a, r15b, the storage format in the corresponding relationship between the storage area and the parameter value of the read voltage model It can be as shown in Figure 6b.

It should be noted that the embodiment of the present application does not limit the storage mode of the parameter value of the read voltage model in the corresponding relationship between the storage area and the parameter value of the read voltage model. The storage modes shown in FIG. 6a and FIG. 6b are only examples for illustration. It does not limit this application. For any one of the storage areas in the corresponding relationship between the storage area and the parameter values of the read voltage model, the storage order of the parameter values of the read voltage model corresponding to the storage area can be arranged in sequence as shown in FIG. 6a and FIG. 6b. It can be arranged in other order as needed. In addition, the size of the storage space occupied by the parameter value of each read voltage model can be the same or different.

Further, for any storage area in the corresponding relationship between the storage area and the parameter values of the read voltage model, when the storage area corresponds to the parameter values of the multiple read voltage models, the storage area corresponds to the parameter values of the multiple read voltage models The parameter values of multiple read voltage models that meet the set conditions are compressed into one read voltage model. The set conditions are that the parameter values of the read voltage models are the same or similar, which is equivalent to the correspondence between the storage area and the parameter values of the read voltage model. The relationship is compressed, and the stored content in the corresponding relationship between the storage area and the parameter value of the read voltage model can be reduced, and the storage space occupied by the parameter value of the read voltage model can be reduced, thereby saving the storage space of the controller. In the embodiments of the present application, the parameter values of the two reading voltage models are the same or similar, meaning that the parameter values of the two reading voltage models are relatively small. For example, the difference between the corresponding parameter values of the two reading voltage models is Within the setting range, the setting range is determined according to the accuracy of the reading voltage.

For example, for TLC NAND, the read voltage model corresponding to the storage area is a linear read voltage model y=ax+b, y represents the read voltage, x represents the identification of the target memory cell, a and b are the parameter values of the read voltage model, one storage The parameter values of the 7 reading voltage models corresponding to the area, the parameter values of these 7 reading voltage models are respectively marked as r1a, r1b, r2a, r2b, r3a, r3b, r4a, r4b, r5a, r5b, r6a, r6b and r7a, r7b, if r2a and r3a are close, r2b and r3b are close, r4a and r5a are close, r4b and r5b are close, r6a and r7a are close, and r6b and r7b are close, then r2a, r2b, r3a, and r3b can be compressed into a read voltage Model parameters, r4a, r4b, r5a, r5b can be compressed into a read voltage model parameter, r6a, r6b and r7a, r7b can be compressed into a read voltage model parameter, at this time it corresponds to the parameter value of the read voltage model in the storage area The storage format in the relationship can be changed from the storage format shown in 6a to the storage format shown in FIG.

In specific implementations, the read voltage model is usually expressed by the functional relationship between the read voltage and the identification of the target memory cell, that is, the read voltage model is a function of the identification of the target memory cell. Therefore, the parameter values of the target read voltage model include information about the target memory. The coefficient of the identification of the target storage cell in the function of the identification of the cell and the value of the constant item in the function of the identification of the target storage cell, that is, the parameter value of the target read voltage model includes the independent variable target in the function of the identification of the target storage cell The coefficient before the identification of the storage unit and the value of the constant term in the function. When the constant term is not included in the function, the value of the constant term in the function is 0. For example, when the read voltage model is a linear model, the functional relationship between the read voltage and the identification of the target memory cell is a linear function, which can be expressed as y=ax+b, where y represents the read voltage and x represents the identification of the target memory cell. a and b are the parameter values of the read voltage model.

S404: The controller determines the read voltage corresponding to the target physical location according to the identifier of the target storage unit where the target physical location is located, the target read voltage model, and the parameter values of the target read voltage model.

S405: The controller obtains the request data according to the read voltage corresponding to the target physical location, and sends the request data to the host.

In step S402, the controller can specifically determine the target read voltage model corresponding to the target storage area where the target physical location is located in the following manner: the controller, according to the target physical location indicated by the location indication information, from the storage area and the read voltage model In the relationship, determine the target read voltage model corresponding to the target storage area where the target physical location is located.

Among them, the read voltage model is a model determined according to the read voltage characteristics of the target storage cell in the non-volatile storage medium. The target division granularity is based on the structure of the non-volatile storage medium and the reading of storage cells under different division granularities in the non-volatile storage medium The voltage characteristics are determined. The structure of the non-volatile storage medium determines the optional range of the granularity of the non-volatile storage medium. For example, for 3D NAND, the granularity of die, plane, block, layer, string and page, as well as multiple die, multiple plane, Multiple blocks, multiple layers, multiple strings, and multiple pages divide the non-volatile storage medium into granularities.

That is to say, as shown in FIG. 8, the process of determining the read voltage model of different storage areas in the non-volatile storage medium mainly includes the following steps:

S801: Determine the target division granularity according to the structure of the non-volatile storage medium and the read voltage characteristics of the storage cells under different division granularities in the non-volatile storage medium. Among them, under the target division granularity, the optimal read voltage of the target storage cell in the nonvolatile storage medium changes according to a certain rule, that is, the target storage cell under the target division granularity can characterize the read voltage so that the determined read voltage The model can accurately characterize the reading voltage and improve the accuracy of the reading voltage.

S802: Divide the non-volatile storage medium into one or more storage areas according to the read voltage characteristics of the storage unit under the target division granularity in the non-volatile storage medium. Wherein, for any storage area, the characteristic of the read voltage changes continuously according to a specific rule as the identifier of the target storage cell included in the storage area changes.

S803: Determine the read voltage model corresponding to each storage area according to the change trend of the read voltage characteristic corresponding to each storage area. It is equivalent to dividing the read voltage model corresponding to the non-volatile storage medium into multiple parts, and each part is characterized by its corresponding read voltage model and the parameter value of the read voltage model, which can increase the read voltage corresponding to each storage area. The accuracy of the read voltage calculated by the model reduces the delay of the read operation.

After determining the read voltage model corresponding to each storage area, by sampling the read voltage at different physical locations in each storage area, the parameter value of the read voltage model corresponding to each storage area is estimated, and the storage area and the read voltage model are obtained. Correspondence of parameter values. Under normal circumstances, the determination of the read voltage model of different storage areas and the corresponding relationship between the parameter values of the storage area and the read voltage model is done by a technician offline, and the read voltage models of different storage areas and the parameters of the storage area and the read voltage model The corresponding relationship of the values is pre-configured in the controller, and there is no need for the controller to determine the read voltage model of different storage areas and the corresponding relationship between the parameter values of the storage area and the read voltage model when reading data online.

In step S403, when the corresponding relationship between the storage area and the parameter value of the read voltage model includes an identification corresponding to the storage area, the controller can directly compare the storage area with the storage area and the read voltage model based on the identification of the target storage area. The parameter value of the target reading voltage model corresponding to the target storage area is obtained in the parameter value correspondence relationship. When the parameter values of the reading voltage model in the corresponding relationship between the storage area and the parameter value of the reading voltage model are arranged according to the index value of the storage area corresponding to the parameter value of the reading voltage model, the storage area identification is not included, the controller according to the target physical location According to the target index value, the model parameters of the target read voltage are obtained from the corresponding relationship between the storage area and the parameter value of the read voltage model, where the target index value is used to indicate the corresponding relationship between the storage area and the parameter value of the read voltage model , The storage location of the parameter value of the target read voltage model.

When the corresponding relationship between the storage area and the parameter values of the read voltage model, the target storage area corresponds to the parameter values of multiple read voltage models, the controller may read the parameters of the voltage model from the storage area according to the target storage area. In the value correspondence relationship, obtain the parameter values of all read voltage models corresponding to the target storage area, and then select one or more of the parameter values of all read voltage models corresponding to the target storage area as the target read voltage model according to the target physical location Parameter, or the controller selects one or more of the parameter values of the multiple read voltage models corresponding to the target storage area from the corresponding relationship between the storage area and the parameter value of the read voltage model according to the target physical location, as the target read Voltage model parameters.

In step S404, in a scenario where the parameter value of the target read voltage model includes the coefficient of the target storage unit's identity in the function related to the target storage unit's identity and the value of the constant term in the function relating to the target storage unit's identity, control The device can determine the read voltage corresponding to the target physical location by the following method: the controller determines the read voltage in the target storage area and the identification of the target storage cell in the target storage area according to the target read voltage model and the parameter values of the target read voltage model. The function calculates the read voltage corresponding to the target physical location according to the identifier of the target storage unit where the target physical location is located and the function satisfied by the read voltage in the target storage area and the identifier of the target storage unit in the target storage area. For example, the target read voltage model is a linear function with respect to the target memory cell identifier, which can be expressed as y=ax+b, where y represents the read voltage, x represents the target memory cell identifier, and a and b are the parameters of the target read voltage model Value (constant). If the identifier of the target memory cell where the target physical location is located is 2, then the read voltage y=2a+b corresponding to the target physical location.

It should be noted that when the target storage unit is a logical unit formed after the logical abstraction of the physical unit in the non-volatile storage medium, the controller uses the identification of the target storage unit where the target physical location is located, the target read voltage model, and the target read For the parameter values of the voltage model, before determining the read voltage corresponding to the target physical location, the target physical location must be mapped to the corresponding target storage unit according to the mapping relationship between the physical location in the non-volatile storage medium and the target storage unit.

For example, the read voltage model corresponding to each storage area in the non-volatile storage medium is a linear model, that is, the read voltage model is y=ax+b, where y represents the optimal read voltage, and x represents the number of the target memory cell A target storage unit is a layer, a and b are the parameter values of the read voltage model, and the corresponding relationship between the storage area and the parameter values of the read voltage model. The parameter values of the read voltage model are stored according to the parameter values of the read voltage model. In the scenario where the index value arrangement of the area does not include the identification of the storage area, the controller can determine the read voltage corresponding to the target physical location indicated by the location indication information of the requested data value in the read request sent by the host through the following steps:

1. The controller receives a read request from the host, and the read request includes the LPA of the requested data;

2. The controller determines the PPN corresponding to the LPA in the read request through the LPA-PPN mapping table, and determines the page number, block number, channel number, CE number, die number, and plane number corresponding to the LPA according to the PPN corresponding to the LPA. The corresponding page number determines the layer number corresponding to the LPA.

3. According to the information of the page number, block number, channel number, CE number, die number, plane number, and layer corresponding to the LPA corresponding to the LPA, the controller determines the correspondence between the storage area and the parameter value of the read voltage model, which corresponds to the LPA The storage location of the parameter value of the target read voltage model corresponding to the storage area of

4. The controller obtains the parameter value of the target read voltage model from the corresponding relationship between the storage area and the parameter value of the read voltage model according to the determined storage location.

Among them, if the storage area of the page corresponding to the LPA corresponds to multiple read voltage models, the controller selects one or more read voltage models from the parameter values of the corresponding multiple read voltage models according to the physical location of the page corresponding to the LPA Parameters. For example, when reading the lower page in TLC NAND, the read operation strategy of the controller is configured to require two read voltages for the read operation. At this time, the controller needs to obtain the parameters of the read voltage model corresponding to the two read voltages. value.

5. The controller calculates the read voltage corresponding to the page corresponding to the LPA according to the layer number corresponding to the LPA, the read voltage model y=ax+b, and the acquired read voltage model parameter values a and b.

Since the read voltage corresponding to the non-volatile storage medium will drift due to multiple factors such as the number of erasing and writing, data retention time, number of read operations, and temperature, in order to further improve the accuracy of the read voltage determined by the controller, The controller also needs to update the parameter values of the read voltage model corresponding to the storage area in the nonvolatile storage medium online, so that the parameter values of the read voltage model can accurately follow the change of the read voltage of the nonvolatile storage medium. Specifically, when any one of each storage area in the non-volatile storage medium satisfies the preset update condition, the controller updates the value of the read voltage model corresponding to the storage area in the corresponding relationship between the storage area and the parameter value of the read voltage model. Parameter value.

Among them, when the preset condition is met, the controller can determine the effective reading voltage corresponding to the storage area through a specific online reading voltage optimization algorithm (such as online voltage search), and determine the corresponding storage area according to the effective reading voltage The parameter value of the read voltage model is updated, and the parameter value of the read voltage model corresponding to the storage area in the corresponding relationship between the storage area and the parameter value of the read voltage model is updated according to the calculated parameter value of the read voltage model. Wherein, when the controller dynamically updates the parameter value of the read voltage model corresponding to the storage area in the corresponding relationship between the storage area and the parameter value of the read voltage model, the controller can actively update the parameter value of the read voltage model corresponding to the storage area. It is also possible to passively update the parameter value of the read voltage model corresponding to the storage area. Actively update the corresponding relationship between the storage area and the parameter value of the read voltage model, or passively update the corresponding relationship between the storage area and the parameter value of the read voltage model. The parameter values of the read voltage model can ensure that the parameter values of the read voltage model in the corresponding relationship between the storage area and the parameter values of the read voltage model are dynamically updated. The two methods are described in detail below.

First, when the controller is in the system idle time window or meets the preset update period, the controller determines the first error parameter under the read voltage corresponding to any one of the storage areas;

When the first error parameter is greater than or equal to the first threshold, the controller updates the parameter value of the read voltage model corresponding to the storage area in the corresponding relationship between the storage area and the parameter value of the read voltage model.

Wherein, the controller being in the system idle time window may mean that the controller is in an idle state, and the idle state may be understood as the load of the read and write IO of the controller is lower than a certain value, so that the controller is relatively idle. The preset update period may be set in advance, and the preset update period may include one period or multiple different periods. The setting of the preset update period corresponding to a storage area may be related to the use status of the storage area (for example, the number of PEs and the number of read operations), or the average service life of multiple storage areas included in the nonvolatile storage medium . For example, the average service life of multiple storage areas can be represented by the average PE. When the average PE is small (for example, early life), a larger preset update period can be used, and when the average PE is large (for example, the end of life) You can use a smaller preset update cycle.

In addition, the first error parameter may be used to indicate the degree of error in the read data, and the first error parameter may be the number of error bits or the bit error rate RBER. The first threshold may be a preset fault tolerance threshold. If the first error parameter is less than the first threshold, it means that it is within the fault tolerance range; if the first error parameter is greater than or equal to the first threshold, it means it is not within the fault tolerance range.

Specifically, when the controller is in the system idle time window or meets the preset update period, the controller calculates the parameter value of the read voltage model corresponding to the storage area currently stored in the corresponding relationship between the storage area and the parameter value of the read voltage model The obtained read voltage value is used as the detected read voltage, the physical location included in the storage area is sampled according to the detected read voltage, and the error parameter under the detected read voltage is acquired as the first error parameter. If the first error parameter is less than the first threshold, the controller can determine that the read voltage corresponding to the storage area is valid, so that it will not be updated. If the first error parameter is greater than or equal to the first threshold, the controller can determine that the read voltage corresponding to the storage area is invalid and needs to be updated.

When the controller updates the parameter values of the reading voltage model corresponding to the storage area, the controller can determine the current effective reading voltage by trying methods. For example, the controller can test multiple voltages in a stepwise increase or decrease manner. Under the error parameters, determine the reading voltage with the smallest error parameter as the current effective reading voltage, and then calculate the parameter values of the effective reading voltage model according to the effective voltage and the reading voltage model corresponding to the storage area. In the corresponding relationship of the parameter values of the voltage model, the read voltage corresponding to the storage area is replaced with the calculated parameter value of the effective read voltage model, so as to update the parameter value of the read voltage model corresponding to the storage area.

In the above method of actively updating the parameter values of the reading voltage model in the corresponding relationship between the storage area and the parameter value of the reading voltage model, the controller will actively update the parameters of the storage area and the reading voltage model in each system idle time window The parameter value of the read voltage model in the corresponding relationship of the value, or the parameter value of the read voltage model in the corresponding relationship between the storage area and the parameter value of the read voltage model actively updated in each preset update period, thereby realizing each After a period of time, the parameter value of the read voltage model in the corresponding relationship between the storage area and the parameter value of the read voltage model is updated once. Therefore, actively updating the parameter values of the read voltage model in the corresponding relationship between the storage area and the parameter values of the read voltage model can make the parameter values of the read voltage model in the corresponding relationship between the storage area and the parameter values of the read voltage model dynamic The updated state ensures that the parameter value of the read voltage model in the corresponding relationship between the storage area and the parameter value of the read voltage model is effective in real time.

In addition, when the controller is triggered to actively update the parameter value of the read voltage model corresponding to the storage area through a preset update cycle, it can be triggered by a timer interruption, and it can also be triggered by other forced signals to trigger the controller to actively update the The parameter value of the read voltage model corresponding to the storage area, and the specific forcing signal can be set in advance, which is not limited in the embodiment of the present application.

Second, the controller passively updates the parameter value of the read voltage model corresponding to the storage area, which may specifically include: when the read voltage is determined by the parameter value of the read voltage model corresponding to the storage area, the first read request data When the second error parameter of is greater than or equal to the second threshold, the controller updates the parameter value of the read voltage model corresponding to the storage area in the corresponding relationship between the storage area and the parameter value of the read voltage model.

Among them, the request data read for the first time refers to the request data read from the storage area for the first time by the controller according to the read voltage corresponding to the storage area in the read voltage management. The request data is based on the read request sent by the host. The acquired data is not the data acquired by the controller actively sampling. The second threshold may be the same as the first threshold or different from the first threshold.

Specifically, the controller reads the request data from the storage area for the first time under the read voltage determined by the parameter value of the read voltage model corresponding to the storage area, and the error parameter of the read request data is the second error parameter. If the second error parameter is less than the first threshold, the controller can determine that the parameter value of the read voltage model corresponding to the storage area is valid, so that it will not be updated. If the second error parameter is greater than or equal to the first threshold, the controller can determine that the parameter value of the read voltage model corresponding to the storage area is invalid and needs to be updated.

It should be noted that when the controller obtains the current effective read voltage during the process of updating the parameter value of the read voltage model corresponding to the storage area, it can also update according to the voltage gradually increasing or decreasing. The specific implementation process and the first The description in one method is consistent, and the details are not repeated here in the embodiment of the present application.

When the controller updates the read voltages corresponding to multiple storage areas in the corresponding relationship between the storage area and the parameter values of the read voltage model, the controller can first determine the storage area where the parameter values of the read voltage model are invalid, and then the controller It is possible to update only the parameter value of the read voltage model of the storage area in which the parameter value of the read voltage model is invalid in the corresponding relationship between the storage area and the parameter value of the read voltage model. In the embodiment of the present application, when the controller updates the parameter value of the read voltage model corresponding to the storage area in the corresponding relationship between the storage area and the parameter value of the read voltage model, it first determines the parameter value of the storage area and the read voltage model. Whether the parameter value of the read voltage model corresponding to the storage area stored in the corresponding relationship is valid, and is updated when it is determined that it is invalid, so that unnecessary operations can be avoided, thereby saving system bandwidth and load overhead.

In the above method of passively updating the parameter values of the reading voltage model in the corresponding relationship between the storage area and the parameter value of the reading voltage model, the controller will determine the value of the reading voltage model in the corresponding relationship between the storage area and the parameter value of the reading voltage model. When the parameter value is invalid, update it to the parameter value of the current valid reading voltage model, so that in each period of time, when there are one or more invalid reading voltage models in the corresponding relationship between the storage area and the parameter value of the reading voltage model The controller will update the parameter values of the one or more reading voltage models. Therefore, passively updating the parameter values of the read voltage model in the corresponding relationship between the storage area and the parameter values of the read voltage model can make the parameter values of the read voltage model in the corresponding relationship between the storage area and the parameter values of the read voltage model be dynamic The updated state ensures that the parameter value of the read voltage model in the corresponding relationship between the storage area and the parameter value of the read voltage model is effective in real time.

For ease of understanding, through the processing flow shown in Figure 9a and Figure 9b, the controller actively updates the corresponding relationship between the storage area and the parameter value of the read voltage model and passively updates the corresponding relationship between the storage area and the parameter value of the read voltage model. The process is illustrated separately.

Fig. 9a is a flow chart in which the controller actively updates the corresponding relationship between the storage area and the parameter value of the read voltage model, taking the controller in the system idle time window as an example. Specifically, assuming that all the parameter values of the reading voltage model in the corresponding relationship between the storage area and the parameter value of the reading voltage model need to be updated, when the controller is in the system idle time window, the controller can determine the storage area and the reading voltage model The corresponding error parameter under the parameter value of each read voltage model in the corresponding relationship of the parameter value of the read voltage model, determine the parameter value of the read voltage model that needs to be updated in the corresponding relationship between the storage area and the parameter value of the read voltage model (for example, when it corresponds When the error parameter is less than the first threshold, it is determined that it does not need to be updated, and when the corresponding error parameter is greater than or equal to the first threshold, it is determined that it needs to be updated), so as to obtain the parameter value record information of the read voltage model to be updated (ie, read voltage management In the information, the reading voltage is invalid storage record); the controller updates the parameter value record information of the reading voltage model to be updated by the method of updating the parameter value of the reading voltage model. It ends when all the parameter value record information of the read voltage model to be updated is updated, or the system idle time window ends.

Fig. 9b is a flow chart in which the controller passively updates the corresponding relationship between the storage area and the parameter value of the read voltage model. Specifically, the controller receives the read request sent by the host, determines the corresponding read voltage model according to the position indication information included in the read request, and obtains the corresponding read voltage model from the corresponding relationship between the storage area and the parameter values of the read voltage model The corresponding read voltage is calculated according to the determined read voltage model, the parameter values of the read voltage model, and the identification of the target storage unit indicated by the position indication information in the read request, and the request data obtained for the first time based on the read voltage fails ( That is, when reading data fails for the first time), mark the parameter value of the read voltage model in the corresponding relationship between the storage area and the parameter value of the read voltage model as the parameter value of the invalid read voltage model, and update the parameter value of the invalid read voltage model or End.

It should be noted that the controller determines the step of invalid read voltage model parameter values in the corresponding relationship between the storage area and the read voltage model parameter value, and updates the invalid read value in the corresponding relationship between the storage area and the read voltage model parameter value. The steps of the parameter values of the voltage model can be executed synchronously or asynchronously. That is, the controller can first determine the parameter values of all invalid read voltage models in the corresponding relationship between the storage area and the parameter values of the read voltage model, and then update the parameter values of all invalid read voltage models one by one; or, control After the device determines the parameter value of an invalid read voltage model in the corresponding relationship between the storage area and the parameter value of the read voltage model, it updates the parameter value of the invalid read voltage model, and then determines the next invalid read The parameter value of the voltage model is updated, and so on; or the controller determines the parameter value of the invalid read voltage model in the corresponding relationship between the storage area and the parameter value of the read voltage model, and at the same time determines the invalid read voltage model The parameter value of is updated, which is not specifically limited in the embodiment of this application.

In practical applications, when the controller updates the parameter value of the read voltage model in the corresponding relationship between the storage area and the parameter value of the read voltage model, if the corresponding relationship between the storage area and the parameter value of the read voltage model resides in the memory, etc. In the fast storage medium, it is necessary to make a backup in the non-volatile storage medium. When the system is initialized, the corresponding relationship between the storage area and the parameter value of the read voltage model is imported from the non-volatile storage medium to the fast storage medium. initialization. Alternatively, the controller directly stores the corresponding relationship between the storage area and the parameter value of the read voltage model in a storage medium that has both fast access and non-volatile characteristics.

Specifically, in a scenario where the read voltage model is a linear model (y=ax+b), the controller actively updates the parameter values of the read voltage model in the corresponding relationship between the storage area and the parameter values of the read voltage model and passively updates the storage area In the process of reading the parameter values of the voltage model in the corresponding relationship with the parameter values of the reading voltage model, the effective parameter values of the reading voltage model can be calculated in the following way, as shown in Figure 10:

S1001: Set the intermediate parameters Sum_N, Sum_XX, Sum_XY, Sum_X, and Sum_Y used to calculate the parameters of the effective read voltage model to record and process the information required for the parameter value update of the read voltage model, and initialize to 0 at the beginning of the online update.

S1002: Perform an online voltage reading search on the physical location of the sampled sample in the non-volatile storage medium; the sampled sample may be pre-configured offline or randomly generated online.

S1003: Determine whether the read voltage of the sampled sample is valid.

Among them, when judging whether the reading voltage of a sampled sample is valid, it can be determined according to the magnitude relationship between the reading voltage of the current sampled sample and the reading voltage of other sampled samples. For example, the reading voltage of the current sampled sample is significantly larger or significantly smaller than the reading voltage of other sampled samples. It is considered that the reading voltage of the current sample is invalid.

S1004: If the read voltage of the sampled sample is valid, update the parameter value of the read voltage model. The number of the target memory cell of the i-th valid sampling sample is denoted as Xi, and the value of the j-th read voltage is denoted as Yij. The operations involved in updating the parameter values of the read voltage model include:

Sum_N++;

Sum_XX+=Xi*Xi;

Sum_XY+=Xi*Yij;

Sum_X+=Xi;

Sum_Y+=Yij;

S1005: If the sampling sample is invalid, perform an online search for the reading voltage of the next sampling sample;

S1006: After completing the sampling of all sample samples corresponding to the parameters of the reading voltage model, calculate the parameter values of the reading voltage model by the following formula, and complete the parameter value update of the reading voltage model corresponding to the jth reading voltage among the parameter values of the reading voltage model :

Alpha=Sum_XX*Sum_N-Sum_X*Sum_X;

a=(Sum_XY*Sum_N-Sum_X*Sum_Y)/Alpha;

b=(Sum_XX*Sum_Y-Sum_XY*Sum_X)/Alpha;

Among them, "*" means multiply, and "/" means divide.

When the storage area to be updated corresponds to the parameter values of multiple read voltage models, the above steps S1001 to S1006 are executed for each parameter value of the read voltage model. Wherein, the updating process of the parameter values of the multiple read voltage models corresponding to the storage area to be updated may be performed sequentially according to a set sequence, or may be performed concurrently at the same time.

When the controller performs rewriting or erasing operations on the data in a storage area, the influence of the number of erasing and writing, data retention time, and the number of read operations on the read voltage will be reset. Therefore, the controller affects a storage area. After the data in the storage area is rewritten or erased, the parameter values of the read voltage model corresponding to the storage area need to be initialized. Specifically, after the controller performs a rewriting or erasing operation on the data in a storage area, it initializes the parameter values of the read voltage model corresponding to the storage area where the rewriting operation or the erasing operation is performed to the set value, where: The set value is a default value (pre-configured in the controller) or a pre-configured preset value determined according to the read voltage characteristics of the storage area where the rewriting operation or the erasing operation is performed. In addition, after the controller performs a rewriting or erasing operation on the data in a storage area, it initializes the parameter values of the read voltage model corresponding to the storage area where the rewriting operation or erasing operation is performed to perform the rewriting operation or erasing operation. The value before the operation.

Among them, the controller usually performs a rewriting operation or an erasing operation on all data in a storage area. For different types of non-volatile storage media, some non-volatile storage media can directly write data in the storage unit with data, overwrite the original data, that is, directly perform rewriting operations, such as RRAM, PCRAM, FRAM, and NRAM, etc.; some non-volatile storage media need to erase the original data in the storage unit before writing new data, so the erase operation must be performed first, such as flash-based non-volatile storage media.

The foregoing mainly introduces the solutions provided by the embodiments of the present application from the perspective of interaction between various devices. It can be understood that, in order to realize the above-mentioned functions, each device, such as a host and a controller, includes a hardware structure and/or software module corresponding to each function. Those skilled in the art should easily realize that in combination with the equipment and algorithm steps of the examples described in the embodiments disclosed in this document, this application can be implemented in the form of hardware or a combination of hardware and computer software. Whether a certain function is executed by hardware or computer software-driven hardware depends on the specific application and design constraint conditions of the technical solution. Professionals and technicians can use different methods for each specific application to implement the described functions, but such implementation should not be considered beyond the scope of this application.

The embodiment of the present application may divide the controller into functional modules according to the foregoing method examples. For example, each functional module may be divided corresponding to each function, or two or more functions may be integrated into one processing module. The above-mentioned integrated modules can be implemented in the form of hardware or software functional modules. It should be noted that the division of modules in the embodiments of the present application is illustrative, and is only a logical function division, and there may be other division methods in actual implementation.

In the case of dividing each functional module corresponding to each function, the embodiment of the present application provides a possible schematic structural diagram of the controller involved in the foregoing embodiment. As shown in FIG. 11, the storage controller 1100 includes a receiving unit 1101, a processing unit 1102, and a sending unit 1103. Among them, the receiving unit 1101 is used to support the controller to perform step S401 in the data reading method provided in FIG. 4; the processing unit 1102 is used to support the controller to perform step S402 and steps in the data reading method provided in FIG. The process of obtaining request data in S403, step S404, and step S405, and/or other processes used in the technology described herein, for example, the parameter value update process of the read voltage model as shown in FIG. 10 (steps S1001-S1006) The sending unit 1103 is used to support the controller to execute the process of sending the request data to the host in step S405 in the data reading method provided in FIG. 4. For specific descriptions, refer to the relevant descriptions in the foregoing embodiments, and the embodiments of the present application will not be repeated here.

In terms of hardware implementation, the foregoing processing unit 1102 may be a processor; the receiving unit 1101 may be a receiver, and the sending unit 1103 may be a transmitter, and the receiver and the transmitter may form a communication interface.

The embodiment of the present application also provides an electronic device having the function of the storage controller shown in FIG. 11, which may be a storage device or a communication device. Referring to FIG. 12, the electronic device 1200 includes: a communication interface 1201, a memory 1202, and a controller 1203. The communication interface 1201, the memory 1202, and the controller 1203 are connected to each other through a bus 1204. In the embodiment of the present application, the controller 1203 is used to control and manage the actions of the electronic device 1200, for example, the process of obtaining request data in step S402, step S403, step S404, and step S405, and/or used in the process described herein. Other processes of the described technology, for example, the parameter value update process of the read voltage model as shown in FIG. 10 (steps S1001-S1006). The communication interface 1201 is used to support the electronic device 1200 to communicate. The memory 1202 is used to store program codes and data of the electronic device 2100.

Among them, the controller 1203 may be a central processing unit, a general-purpose processor, a digital signal processor, an application specific integrated circuit, a field programmable gate array or other programmable logic devices, transistor logic devices, hardware components or any combination thereof, which may Implement or execute various exemplary logical blocks, modules and circuits described in conjunction with the disclosure of this application. The processor 1102 may also be a combination that implements computing functions, for example, includes a combination of one or more microprocessors, a combination of a digital signal processor and a microprocessor, and so on. The bus 1204 may be a peripheral component interconnect standard (PCI) bus or an extended industry standard architecture (EISA) bus, etc. The bus 1204 can be divided into an address bus, a data bus, a control bus, and the like. For ease of representation, only one thick line is used to represent in FIG. 12, but it does not mean that there is only one bus or one type of bus.

An embodiment of the present application also provides a communication system, which includes a host, a controller, and a non-volatile storage medium, the non-volatile storage medium includes multiple storage areas, and the non-volatile storage medium includes one or more storage areas, Each storage area includes multiple target storage units obtained by dividing the non-volatile storage medium according to the target division granularity, and the read voltage model is a function of the identification of the target storage unit (such as the number of the target storage unit). The communication system may be the system shown in FIG. 2 or FIG. 3. In the embodiment of the present application, the host can be used for non-volatile storage media, and send read requests to the controller, and receive request data sent by the controller; the controller can be used for management, and can be used to execute the data provided in Figure 4 The steps performed by the controller in the data reading method. The controller is used to perform steps S401 to S405 in FIG. 4, or to perform the parameter value update process (steps S1001-S1006) of the read voltage model shown in FIG. 10, and/or other processes of the technology described herein. For the specific process, refer to the description in the embodiment shown in FIG. 4 or FIG. 10, and details are not described in the embodiment of the present application.

In another embodiment of the present application, a computer-readable storage medium is also provided. The computer-readable storage medium stores computer-executable instructions. When the instructions run on a computer, the computer executes the steps provided in Figure 4 above. The data reading method.

In another embodiment of the invention of the present application, a computer program product is also provided. The computer program product has computer-executable instructions stored on a computer storage medium. The computer-executable instructions are used to make the computer execute when called by a computer. The data reading method provided in Figure 4 above.

In the embodiment of the present application, the controller can determine the target read voltage model corresponding to the target storage area where the target physical location is located according to the target physical location indicated by the location indication information of the request data in the read request sent by the host, and according to the target In the storage area, the parameter value of the target read voltage model corresponding to the target storage area is obtained from the corresponding relationship between the storage area and the parameter value of the read voltage model, and the target read voltage model and the target read voltage model can be identified according to the target physical location. The parameter value of the target read voltage model determines the read voltage corresponding to the target physical location, where the read power model is a function of the identification of the target storage unit. In the embodiment of the present application, different storage areas in the non-volatile storage medium correspond to different parameter values of the read voltage model, which is equivalent to dividing the read voltage model corresponding to the non-volatile storage medium into multiple parts, each part Using the respective corresponding read voltage models and the parameter values of the read voltage models to characterize, in turn, the accuracy of the read voltage calculated according to the read voltage model corresponding to each storage area can be improved, and the delay of the read operation can be reduced.

This application is described with reference to flowcharts and/or block diagrams of methods, equipment (systems), and computer program products according to the embodiments of this application. It should be understood that each process and/or block in the flowchart and/or block diagram, and the combination of processes and/or blocks in the flowchart and/or block diagram can be implemented by computer program instructions. These computer program instructions can be provided to the processor of a general-purpose computer, a special-purpose computer, an embedded processor, or other programmable data processing equipment to generate a machine, so that the instructions executed by the processor of the computer or other programmable data processing equipment are generated It is a device that realizes the functions specified in one process or multiple processes in the flowchart and/or one block or multiple blocks in the block diagram.

These computer program instructions can also be stored in a computer-readable memory that can guide a computer or other programmable data processing equipment to work in a specific manner, so that the instructions stored in the computer-readable memory produce an article of manufacture including the instruction device. The device implements the functions specified in one process or multiple processes in the flowchart and/or one block or multiple blocks in the block diagram.

These computer program instructions can also be loaded on a computer or other programmable data processing equipment, so that a series of operation steps are executed on the computer or other programmable equipment to produce computer-implemented processing, so as to execute on the computer or other programmable equipment. The instructions provide steps for implementing functions specified in a flow or multiple flows in the flowchart and/or a block or multiple blocks in the block diagram.

Obviously, those skilled in the art can make various changes and modifications to the embodiments of the present application without departing from the spirit and scope of the embodiments of the present application. In this way, if these modifications and variations of the embodiments of this application fall within the scope of the claims of this application and their equivalent technologies, this application is also intended to include these modifications and variations.

Claims

A data reading method, characterized in that it is applied to a controller, the front end of the controller is used to connect to a host, and the back end of the controller is used to connect to a non-volatile storage medium.

The controller receives a read request sent by the host, and the read request includes location indication information of requested data;

The controller determines the target read voltage model corresponding to the target storage area where the target physical location is located according to the target physical location indicated by the location indication information; wherein, the target physical location is that the requested data is in the A physical location in a non-volatile storage medium, where the non-volatile storage medium includes one or more storage areas, and each storage area includes a plurality of target storage units obtained by dividing the non-volatile storage medium according to the target division granularity, The read voltage model is a function of the identification of the target storage unit;

According to the target storage area, the controller obtains the parameter value of the target read voltage model corresponding to the target storage area from the corresponding relationship between the storage area and the parameter value of the read voltage model; wherein, In the correspondence between the storage area and the parameter value of the read voltage model, one storage area corresponds to one or more parameters of the read voltage model;

The controller determines the read voltage corresponding to the target physical location according to the identifier of the target storage unit where the target physical location is located, the target read voltage model, and the parameter value of the target read voltage model;

The controller obtains the request data according to the read voltage corresponding to the target physical location, and sends the request data to the host.
The method according to claim 1, wherein the controller obtains the corresponding relationship between the storage area and the parameter value of the read voltage model according to the target storage area. The parameter values of the target read voltage model include:

When the corresponding relationship between the storage area and the parameter values of the read voltage model, and the target storage area corresponds to a plurality of parameter values of the read voltage model, the controller obtains data from all values according to the target physical location. One or more of the target storage area corresponding to a plurality of parameter values of the read voltage model is selected as the target read voltage model parameter.
The method according to claim 1 or 2, wherein the controller determines the target read voltage model corresponding to the target storage area where the target physical location is located according to the target physical location indicated by the location indication information, include:

The controller determines the target read voltage model corresponding to the target storage area where the target physical location is located from the corresponding relationship between the storage area and the read voltage model according to the target physical location indicated by the location indication information .
8. The method according to any one of claims 1 to 3, wherein the read voltage model is used to characterize the correspondence between the identifier of the target memory cell and the optimal read voltage.
The method according to any one of claims 1 to 4, wherein the parameter value of the target read voltage model includes the value of the identifier of the target storage unit in the function regarding the identifier of the target storage unit. A coefficient and the value of a constant term in the function related to the identification of the target storage unit;

The controller determines the read voltage corresponding to the target physical location according to the identifier of the target storage unit where the target physical location is located, the target read voltage model, and the parameter value of the target read voltage model, including:

The controller determines the function satisfied by the read voltage in the target storage area and the identifier of the target storage cell in the target storage area according to the target read voltage model and the parameter values of the target read voltage model;

The controller calculates the target physical location corresponding to the target physical location based on the identification of the target storage unit where the target physical location is located and the function satisfied by the read voltage in the target storage area and the identification of the target storage unit in the target storage area The reading voltage.
The method according to any one of claims 1-5, further comprising:

When any one of the storage areas meets the preset update condition, the controller updates the parameter value of the read voltage model corresponding to the storage area in the corresponding relationship between the storage area and the parameter value of the read voltage model.
The method of claim 6, wherein when any one of the storage areas meets a preset update condition, the controller updates the corresponding relationship between the storage area and the parameter value of the read voltage model The parameter values of the read voltage model corresponding to the storage area in this field include:

When the controller is in the system idle time window or meets the preset update period, the controller determines the first error parameter under the read voltage corresponding to any one of the storage areas;

When the first error parameter is greater than or equal to the first threshold, the controller updates the parameter value of the read voltage model corresponding to the storage area in the corresponding relationship between the storage area and the parameter value of the read voltage model.
8. The method according to claim 7, wherein the preset update period is related to the use state of the storage area; or, the preset update period is related to multiple storage devices included in the nonvolatile storage medium. The average service life of the area is related.
The method according to any one of claims 1-8, wherein for any one of the storage areas in the corresponding relationship between the storage area and the parameter value of the read voltage model, when the storage area corresponds to multiple read voltage models When the parameter value of the storage area corresponds to the parameter values of the multiple read voltage models, the parameter values of the multiple read voltage models that meet the set conditions are compressed into one read voltage model, and the set conditions are the parameters of the read voltage model The values are the same or similar.
8. The method according to any one of claims 1-9, further comprising:

After the controller performs a rewriting or erasing operation on the data in one of the storage areas, it initializes the parameter values of the read voltage model corresponding to the storage area where the rewriting operation or the erasing operation is performed to a set value, where: The set value is a default value or a pre-configured preset value determined according to the read voltage characteristics of the storage area where the rewriting operation or the erasing operation is performed.
10. The method of claim 10, wherein the controller performs a rewriting operation or an erasing operation on data in one of the storage areas, comprising:

The controller performs a rewriting operation or an erasing operation on all data in the storage area.
The method according to any one of claims 1-11, wherein the target storage unit is any one of a die, a plane, a block, a string, a layer, and a page;

Or, the target storage unit is a storage unit composed of multiple dies;

Or, the target storage unit is a storage unit composed of multiple planes;

Or, the target storage unit is a storage unit composed of multiple blocks;

Or, the target storage unit is a storage unit composed of multiple strings;

Or, the target storage unit is a storage unit composed of multiple layers;

Alternatively, the target storage unit is a storage unit composed of multiple pages.
A storage controller, characterized by comprising: a receiving unit, a processing unit, and a sending unit;

The receiving unit is configured to receive a read request sent by a host, where the read request includes location indication information of requested data;

The processing unit is configured to determine a target read voltage model corresponding to the target storage area where the target physical location is located according to the target physical location indicated by the location indication information; wherein the target physical location is the request data In the physical location of the non-volatile storage medium, the non-volatile storage medium includes one or more storage areas, and each storage area includes a plurality of targets obtained by dividing the non-volatile storage medium according to the target division granularity Storage unit, the read voltage model is a function of the identification of the target storage unit; according to the target storage area, the target is obtained from the corresponding relationship between the storage area and the parameter value of the read voltage model The parameter value of the target read voltage model corresponding to the storage area, wherein, in the corresponding relationship between the storage area and the parameter value of the read voltage model, one storage area corresponds to one or more of the read voltage model Parameters; determine the read voltage corresponding to the target physical location according to the identification of the target storage unit where the target physical location is located, the target read voltage model, and the parameter values of the target read voltage model; and, according to the target The read voltage corresponding to the physical location, and obtain the requested data;

The sending unit is configured to send the request data to the host.
The storage controller according to claim 13, wherein the processing unit obtains the target from the corresponding relationship between the storage area and the parameter value of the read voltage model according to the target storage area. When storing the parameter values of the target read voltage model corresponding to the storage area, it is specifically used for:

When the corresponding relationship between the storage area and the parameter value of the read voltage model, the target storage area corresponds to a plurality of parameter values of the read voltage model, according to the target physical location, from the target storage area One or more of the parameter values corresponding to the plurality of read voltage models are selected as the target read voltage model parameters.
The storage controller according to claim 13 or 14, wherein the processing unit determines the target read corresponding to the target storage area where the target physical location is located according to the target physical location indicated by the location indication information. In the voltage model, it is specifically used for:

According to the target physical location indicated by the location indication information, a target read voltage model corresponding to the target storage area where the target physical location is located is determined from the corresponding relationship between the storage area and the read voltage model.
15. The memory controller according to any one of claims 13-15, wherein the read voltage model is used to characterize the correspondence between the identifier of the target memory cell and the optimal read voltage.
The storage controller according to any one of claims 12-16, wherein the parameter value of the target read voltage model includes the value of the target storage unit in the function related to the identification of the target storage unit The identified coefficient and the value of the constant term in the function related to the identification of the target storage unit;

When the processing unit determines the read voltage corresponding to the target physical location according to the identifier of the target storage unit where the target physical location is located, the target read voltage model, and the parameter value of the target read voltage model, it specifically uses in:

Determine a function satisfied by the read voltage in the target storage area and the identifier of the target storage cell in the target storage area according to the target read voltage model and the parameter values of the target read voltage model;

Calculate the read voltage corresponding to the target physical location according to the identifier of the target storage unit where the target physical location is located and the function satisfied by the read voltage in the target storage area and the identifier of the target storage unit in the target storage area.
The storage controller according to any one of claims 13-17, wherein the processing unit is further configured to: when any one of the storage areas meets a preset update condition, update the The parameter value of the read voltage model corresponding to the storage area in the correspondence relationship between the storage area and the parameter value of the read voltage model.
The storage controller according to claim 18, wherein the processing unit specifically uses parameters of the read voltage model corresponding to the storage area in the corresponding relationship between the storage area and the parameter value of the read voltage model. in:

When the storage controller is in the system idle time window or meets the preset update period, determining the first error parameter under the read voltage corresponding to any one of the storage areas;

When the first error parameter is greater than or equal to the first threshold, the parameter value of the read voltage model corresponding to the storage area in the corresponding relationship between the storage area and the parameter value of the read voltage model is updated.
The storage controller according to claim 19, wherein the preset update period is related to the use state of the storage area; or, the preset update period is more than that included in the nonvolatile storage medium. The average service life of each storage area is related.
The storage controller according to any one of claims 13-20, wherein for any one of the storage areas in the corresponding relationship between the storage area and the parameter value of the read voltage model, when the storage area corresponds to multiple reads When the parameter values of the voltage model are used, the storage area corresponds to the parameter values of the multiple read voltage models and the parameter values of the multiple read voltage models that meet the set conditions are compressed into one read voltage model, and the set condition is the read voltage model The parameter values of are the same or similar.
The storage controller according to any one of claims 13-21, wherein the processing unit is further configured to: perform rewriting or erasing operations on data in one of the storage areas. The parameter value of the read voltage model corresponding to the storage area of the write operation or the erase operation is initialized to the set value;

Wherein, the set value is a default value or a pre-configured preset value determined according to the read voltage characteristics of the storage area where the rewriting operation or the erasing operation is performed.
22. The storage controller according to claim 22, wherein the processing unit is specifically configured to: when performing a rewriting operation or an erasing operation on data in one of the storage areas:

A rewriting operation or an erasing operation is performed on all data in one of the storage areas.
The storage controller according to any one of claims 13-23, wherein the target storage unit is any one of die, plane, block, string, layer, and page. Species

Or, the target storage unit is a storage unit composed of multiple dies;

Or, the target storage unit is a storage unit composed of multiple planes;

Or, the target storage unit is a storage unit composed of multiple blocks;

Or, the target storage unit is a storage unit composed of multiple strings;

Or, the target storage unit is a storage unit composed of multiple layers;

Alternatively, the target storage unit is a storage unit composed of multiple pages.
An electronic device, characterized in that it comprises a communication interface, a controller and a memory;

The communication interface is configured to receive a read request sent by a host, and the read request includes location indication information of requested data;

The memory stores code instructions;

The controller is configured to call code instructions stored in the memory to execute: determine the target read voltage model corresponding to the target storage area where the target physical location is located according to the target physical location indicated by the location indication information; wherein , The target physical location is the physical location of the requested data in the non-volatile storage medium, the non-volatile storage medium includes one or more storage areas, and each storage area includes a plurality of the non-volatile storage areas. The target storage medium is divided into target storage units according to the target division granularity, and the read voltage model is a function of the identification of the target storage unit; according to the target storage area, from the storage area and the read voltage model In the parameter value correspondence relationship, the parameter value of the target read voltage model corresponding to the target storage area is acquired, wherein, in the correspondence relationship between the storage area and the parameter value of the read voltage model, one of the storage areas Corresponding to one or more parameters of the read voltage model; determine the target physical location according to the identifier of the target storage unit where the target physical location is located, the target read voltage model, and the parameter values of the target read voltage model Corresponding reading voltage; acquiring the requested data according to the reading voltage corresponding to the target physical location;

The communication interface is also used to send the request data to the host.
The device according to claim 25, wherein the controller obtains the target storage area from the corresponding relationship between the storage area and the parameter value of the read voltage model according to the target storage area When the corresponding parameter value of the target voltage model is read, it is specifically used for:

When the corresponding relationship between the storage area and the parameter value of the read voltage model, the target storage area corresponds to a plurality of parameter values of the read voltage model, according to the target physical location, from the target storage area One or more of the parameter values corresponding to the plurality of read voltage models are selected as the target read voltage model parameters.
The device according to claim 25 or 26, wherein the controller determines the target read voltage model corresponding to the target storage area where the target physical location is located according to the target physical location indicated by the location indication information When, specifically used for:

According to the target physical location indicated by the location indication information, a target read voltage model corresponding to the target storage area where the target physical location is located is determined from the corresponding relationship between the storage area and the read voltage model.
The device according to any one of claims 25-27, wherein the read voltage model is used to characterize the correspondence between the identifier of the target storage unit and the optimal read voltage.
The device according to any one of claims 25-28, wherein the parameter value of the target read voltage model includes the value of the identifier of the target storage unit in the function about the identifier of the target storage unit. Coefficient and the value of the constant term in the function related to the identification of the target storage unit;

When the controller determines the read voltage corresponding to the target physical location according to the identifier of the target storage unit where the target physical location is located, the target read voltage model, and the parameter value of the target read voltage model, it specifically uses in:

Determine a function satisfied by the read voltage in the target storage area and the identifier of the target storage cell in the target storage area according to the target read voltage model and the parameter values of the target read voltage model;

Calculate the read voltage corresponding to the target physical location according to the identifier of the target storage unit where the target physical location is located and the function satisfied by the read voltage in the target storage area and the identifier of the target storage unit in the target storage area.
The device according to any one of claims 25-29, wherein the controller is further configured to: update the storage area when any one of the storage areas meets a preset update condition The parameter value of the read voltage model corresponding to the storage area in the corresponding relationship with the parameter value of the read voltage model.
The device according to claim 30, wherein the controller is specifically configured to update the parameter value of the read voltage model corresponding to the storage area in the corresponding relationship between the storage area and the parameter value of the read voltage model :

When the controller is in the system idle time window or meets the preset update period, determining the first error parameter under the read voltage corresponding to any one of the storage areas;

When the first error parameter is greater than or equal to the first threshold, the parameter value of the read voltage model corresponding to the storage area in the corresponding relationship between the storage area and the parameter value of the read voltage model is updated.
The device according to claim 31, wherein the preset update period is related to the use state of the storage area; or, the preset update period is related to a plurality of storage devices included in the non-volatile storage medium. The average service life of the area is related.
The device according to any one of claims 25-32, wherein for any one of the storage areas in the corresponding relationship between the storage area and the parameter value of the read voltage model, when the storage area corresponds to multiple read voltage models When the parameter value of the storage area corresponds to the parameter values of the multiple read voltage models, the parameter values of the multiple read voltage models that meet the set conditions are compressed into one read voltage model, and the set conditions are the parameters of the read voltage model The values are the same or similar.
The device according to any one of claims 25-33, wherein the controller is further configured to:

After performing a rewriting or erasing operation on the data in one of the storage areas, the parameter values of the read voltage model corresponding to the storage area where the rewriting operation or the erasing operation is performed are initialized to the set value, wherein the setting The value is a default value or a pre-configured preset value determined according to the read voltage characteristics of the storage area where the rewrite operation or the erase operation is performed.
The device according to claim 34, wherein when the controller performs a rewriting operation or an erasing operation on data in one of the storage areas, it is specifically configured to:

A rewriting operation or an erasing operation is performed on all data in one of the storage areas.
The device according to any one of claims 25-35, wherein the target storage unit is any one of die, plane, block, string, layer, and page;

Or, the target storage unit is a storage unit composed of multiple dies;

Or, the target storage unit is a storage unit composed of multiple planes;

Or, the target storage unit is a storage unit composed of multiple blocks;

Or, the target storage unit is a storage unit composed of multiple strings;

Or, the target storage unit is a storage unit composed of multiple layers;

Alternatively, the target storage unit is a storage unit composed of multiple pages.