WO2020228484A1

WO2020228484A1 - Array substrate and manufacturing method therefor, and display panel

Info

Publication number: WO2020228484A1
Application number: PCT/CN2020/085435
Authority: WO
Inventors: 冯伟; 周纪登; 吕凤珍
Original assignee: 京东方科技集团股份有限公司; 合肥鑫晟光电科技有限公司
Priority date: 2019-05-14
Filing date: 2020-04-17
Publication date: 2020-11-19
Also published as: CN110071165A; CN110071165B

Abstract

An array substrate and a manufacturing method therefor, and a display panel. The array substrate comprises: a first substrate, and a thin film transistor and a light-emitting device arranged on the first substrate, wherein the first substrate is provided with a display region and a non-display region; the light-emitting device is located in the non-display region; and the light-emitting device is connected to the thin film transistor and a low-level signal end and is configured to emit light under the control of the low-level signal end and the thin film transistor, which is in a conductive state.

Description

Array substrate, manufacturing method thereof, and display panel

This application claims the priority of the Chinese patent application 201910399463.2 entitled "An array substrate, a manufacturing method thereof, and a display panel" filed on May 14, 2019.

Technical field

The present disclosure relates to an array substrate, a manufacturing method thereof, and a display panel.

Background technique

In recent years, flat panel displays such as Thin Film Transistor-Liquid Crystal Display (TFT-LCD) and Active Matrix Organic Light Emitting Diode (AMOLED) have light weight and thickness. The advantages of thinness and low power consumption make it widely used in electronic products such as TVs and mobile phones. With the advancement of science and technology, array substrates with high resolution and narrow borders have become a trend of development. Both the display area and the non-display area of the array substrate include thin film transistors. The thin film transistors located in the non-display area are used to form a gate drive circuit. The gate drive signal is provided, and the thin film transistor located in the display area is used to provide the data signal to the pixel unit.

There is currently a need for improved array substrates and then improved flat panel displays.

Summary of the invention

The application provides an array substrate, a manufacturing method thereof, and a display panel.

According to one aspect, the present disclosure provides an array substrate including: a first substrate; and thin film transistors and light emitting devices disposed on the first substrate, wherein: the first substrate has a display area and a non-display area; The light emitting device is located in a non-display area, and the light emitting device is connected to a thin film transistor and a low level signal terminal and is configured to emit light under the control of the low level signal terminal and the thin film transistor in a conductive state.

In an example, the light-emitting device is further configured to not emit light under the control of the low-level signal terminal and the thin film transistor in an off state.

In an example, the light emitting device includes a first electrode, a second electrode and an organic light emitting layer; the first electrode is located on a side of the organic light emitting layer close to the first substrate; the second electrode is located The organic light-emitting layer is far away from the first substrate; the first electrode and the second electrode are configured to apply an electric field to the organic light-emitting layer; and the organic light-emitting layer is configured to be in the electric field Glows under the effect of light.

In one example, the orthographic projection of the thin film transistor on the first substrate covers the orthographic projection of the light emitting device on the first substrate.

In an example, the first substrate further includes a pixel electrode; the light-emitting device is located on a side of the thin film transistor away from the first substrate; the first electrode and the pixel electrode are formed by the same process, and Connected to the drain electrode of the thin film transistor; the second electrode is connected to the low-level signal terminal; the first electrode is a transmissive electrode; and the second electrode is a reflective electrode.

In an example, there is no overlap area between the orthographic projection of the thin film transistor on the first substrate and the orthographic projection of the light emitting device on the first substrate.

In one example, the first electrode and the gate electrode of the thin film transistor are formed by the same process and are connected to the low-level signal terminal; the second electrode and the source and drain electrodes of the thin film transistor are formed by the same process and are formed by the same process as the thin film transistor. The drain electrode of the transistor is connected; the first electrode is a reflective electrode; and the second electrode is a transmissive electrode.

In one example, the size of the first electrode, the second electrode and the organic light emitting layer is smaller than the size of the gate electrode of the thin film transistor.

In an example, the first electrode and the source and drain electrodes of the thin film transistor are formed by the same process and are connected with the drain electrode of the thin film transistor; the second electrode and the pixel electrode are formed by the same process and are connected with the low-level signal Terminal connection; the first electrode is a reflective electrode; and the second electrode is a transmissive electrode.

In an example, the first electrode is located on the side of the passivation layer of the thin film transistor away from the first substrate, and is connected to the gate electrode or the drain electrode of the thin film transistor; the second electrode and the pixel electrode are formed by the same process, And connected to a low-level signal terminal; the first electrode is a reflective electrode; and the second electrode is a transmissive electrode.

In an example, the array substrate is used in a thin film transistor liquid crystal display, and wherein the light emitting device is also located in the display area.

According to another aspect, the present disclosure provides a display panel, including: an array substrate as described above; and a color filter substrate disposed opposite to the array substrate.

In an example, the color filter substrate includes a second substrate, and a black matrix layer and a protective layer disposed on the second substrate; the protective layer is located on the side of the black matrix layer close to the first substrate And the orthographic projection of the black matrix layer on the first substrate covers the orthographic projection of the light-emitting device on the first substrate.

According to yet another aspect, the present disclosure provides a method for manufacturing an array substrate, including: providing a first substrate, wherein the first substrate has a display area and a non-display area; and forming a thin film on the first substrate A transistor and a light emitting device, wherein the light emitting device is located in a non-display area, and wherein the light emitting device is connected to a thin film transistor and a low-level signal terminal and is configured as a thin film transistor at the low-level signal terminal and in a conductive state Glowing under the control.

In an example, the forming a thin film transistor and a light emitting device on the first substrate includes: forming a thin film transistor on the first substrate; and sequentially forming a first electrode and an organic light emitting device on the side of the thin film transistor away from the first substrate. Layer and second electrode to form a light emitting device.

In an example, the forming the thin film transistor and the light-emitting device on the first substrate includes: forming a gate electrode and a first electrode on the first substrate using the same process; and sequentially forming the gate electrode on the side away from the first substrate. A gate insulating layer and an active layer; an organic light emitting layer is formed on the side of the first electrode away from the first substrate; and the source and drain electrodes and the second electrode are formed by the same process on the side of the organic light emitting layer away from the first substrate.

In an example, the forming a thin film transistor and a light emitting device on the first substrate includes: forming a gate electrode on the first substrate; and sequentially forming a gate insulating layer and an active layer on the side of the gate electrode away from the first substrate The source and drain electrodes and the first electrode are formed by the same process on the side of the active layer away from the first substrate; the passivation layer is formed on the side of the source and drain electrodes away from the first substrate; the first electrode is away from the first substrate. An organic light-emitting layer is formed on the side; and the pixel electrode and the second electrode are formed by the same process on the side of the organic light-emitting layer away from the first substrate.

In an example, the forming a thin film transistor and a light emitting device on the first substrate includes: forming a gate electrode on the first substrate; and sequentially forming a gate insulating layer and an active layer on the side of the gate electrode away from the first substrate. , Source and drain electrodes and passivation layer; the first electrode and the organic light-emitting layer are formed in sequence on the side of the passivation layer away from the first substrate; the pixel electrode and the first electrode are formed by the same process on the side of the organic light-emitting layer away from the first substrate Two electrodes.

Other features and advantages of the present application will be described in the following description, and partly become obvious from the description, or understood by implementing the present application. Other advantages of the application can be realized and obtained through the solutions described in the specification, claims and drawings.

Description of the drawings

The accompanying drawings are used to provide an understanding of the technical solution of the present application and constitute a part of the specification. Together with the embodiments of the present application, they are used to explain the technical solution of the present application, and do not constitute a limitation to the technical solution of the present application.

FIG. 1 is a top view of an array substrate provided by an embodiment of the application;

Figure 2 is a cross-sectional view corresponding to Figure 1;

FIG. 3 is a top view of an array substrate provided by an embodiment of the application;

Figure 4 is a cross-sectional view corresponding to Figure 3;

5 is a schematic structural diagram of a light emitting device provided by an embodiment of the application;

FIG. 6 is a schematic structural diagram of an array substrate provided by an embodiment of the application;

FIG. 7 is a schematic structural diagram of an array substrate provided by an embodiment of the application;

FIG. 8 is a schematic structural diagram of an array substrate provided by an embodiment of the application;

FIG. 9 is a schematic structural diagram of an array substrate provided by an embodiment of the application;

FIG. 10A is a schematic structural diagram corresponding to FIG. 9;

10B is a schematic structural diagram corresponding to FIG. 9;

FIG. 11 is a flowchart of a manufacturing method of an array substrate provided by an embodiment of the application; and

FIG. 12 is a schematic structural diagram of a display panel provided by an embodiment of the application.

Detailed ways

This application describes a number of embodiments, but the description is exemplary rather than restrictive, and it is obvious to a person of ordinary skill in the art that within the scope of the embodiments described in this application, There are more examples and implementation schemes. Although many possible feature combinations are shown in the drawings and discussed in the specific embodiments, many other combinations of the disclosed features are also possible. Unless specifically limited, any feature or element of any embodiment can be used in combination with, or substituted for, any other feature or element in any other embodiment.

This application includes and contemplates combinations with features and elements known to those of ordinary skill in the art. The embodiments, features and elements already disclosed in this application can also be combined with any conventional features or elements to form a unique invention solution defined by the claims. Any feature or element of any embodiment can also be combined with features or elements from other invention solutions to form another unique invention solution defined by the claims. Therefore, it should be understood that any feature shown and/or discussed in this application can be implemented individually or in any appropriate combination. Therefore, the embodiments are not restricted except for the restrictions made according to the appended claims and their equivalents. In addition, various modifications and changes can be made within the protection scope of the appended claims.

In addition, when describing representative embodiments, the specification may have presented the method and/or process as a specific sequence of steps. However, to the extent that the method or process does not depend on the specific order of the steps described herein, the method or process should not be limited to the steps in the specific order described. As those of ordinary skill in the art will understand, other sequence of steps are also possible. Therefore, the specific order of steps set forth in the specification should not be construed as a limitation on the claims. In addition, the claims for the method and/or process should not be limited to executing their steps in the written order. Those skilled in the art can easily understand that these orders can be changed and still remain within the spirit and scope of the embodiments of the present application. Inside.

Unless otherwise defined, the technical or scientific terms disclosed in the embodiments of the present invention shall have the usual meanings understood by those with ordinary skills in the field to which the present invention belongs. The "first", "second" and similar words used in the embodiments of the present invention do not indicate any order, quantity, or importance, but are only used to distinguish different components. "Include" or "include" and other similar words mean that the element or item appearing before the word covers the element or item listed after the word and its equivalents, but does not exclude other elements or items. Similar words such as "connected" or "connected" are not limited to physical or mechanical connections, but may include electrical connections, whether direct or indirect. "Up", "Down", "Left", "Right", etc. are only used to indicate the relative position relationship. When the absolute position of the described object changes, the relative position relationship may also change accordingly.

Those skilled in the art can understand that the thin film transistors used in all the embodiments of the present application may be P-type thin film transistors or N-type thin film transistors, and the thin film transistors used in the embodiments of the present invention may be oxide semiconductor transistors. For the thin film transistor, for example, a thin film transistor with a bottom gate structure or a top gate structure can be selected, as long as the switching function can be realized.

Research has found that under low temperature or high temperature environments, the characteristics of the thin film transistors in the array substrate will drift, resulting in a decrease in the on-state current of the thin film transistor, which in turn makes the charging rate of the array substrate lower, which not only reduces the service life and Stability also affects the display quality of the array substrate.

The purpose of this application is to provide an array substrate, a manufacturing method thereof, and a display panel, which can increase the on-state current of the thin film transistor, which not only prolongs the service life of the array substrate, but also improves the stability and display quality of the array substrate.

An embodiment of the application provides an array substrate. FIG. 1 is a top view 1 of the array substrate provided by an embodiment of the application, FIG. 2 is a cross-sectional view corresponding to FIG. 1, and FIG. 3 is a top view 2 of the array substrate provided by an embodiment of the application. Fig. 4 is a cross-sectional view corresponding to Fig. 3.

As shown in FIGS. 1 to 4, the array substrate provided by the embodiment of the present application includes: a first substrate 100 and a thin film transistor 10 and a light emitting device 20 disposed on the first substrate 100. The first substrate 100 includes a display area and a non-display area. The light emitting device 20 is located in the non-display area. The light emitting device 20 is connected to the thin film transistor 10 and the low-level signal terminal VGL and is configured to emit light under the control of the low-level signal terminal VGL and the thin film transistor 10 in an on state.

In an example, the first substrate 100 may be a rigid substrate or a flexible substrate. The rigid substrate can be, but is not limited to, one or more of glass and metal sheet. The flexible substrate can be, but is not limited to, polyethylene terephthalate, ethylene terephthalate, polyetheretherketone, polystyrene, polycarbonate, polyarylate, polyarylate, One or more of polyimide, polyvinyl chloride, polyethylene, and textile fibers.

In one example, in the embodiment of the present application, the thin film transistors 10 can be N-type thin film transistors or P-type thin film transistors, which can unify the process flow, reduce the process process, and help improve the yield of products. In addition, considering that the leakage current of low-temperature polysilicon thin film transistors is relatively small, all transistors in the embodiments of the present invention are low-temperature polysilicon thin film transistors. For the thin film transistor, for example, a thin film transistor with a bottom gate structure or a thin film transistor with a top gate structure can be selected, as long as the switching function can be realized.

In an example, the low-level signal terminal VGL is used to continuously provide a low-level signal. It should be noted that, in order to ensure that the light-emitting device can emit light normally, there is a voltage difference between the voltage value of the signal of the low-level signal terminal VGL and the voltage value of the signal of the drain electrode of the thin film transistor in the ON state.

For example, the thin film transistor includes a gate electrode 12, a gate insulating layer, an active layer, a source electrode 15 and a drain electrode 16. In the embodiment of the present application, the light emitting device 20 may be connected to the gate electrode or the drain electrode of the thin film transistor 10, for example. It should be noted that FIG. 1 illustrates the connection between the light-emitting device 20 and the drain electrode 16 in the thin film transistor as an example, and FIG. 3 illustrates the connection between the light-emitting device and the gate electrode in the thin film transistor as an example. The example does not make any restrictions on this.

The array substrate in this embodiment can be used for thin film transistor liquid crystal displays, and can also be used for organic light emitting diode displays. When the array substrate is used in a thin film transistor liquid crystal display, the light emitting device 20 may be located in the non-display area, and may also be located in the display area and the non-display area. When the array substrate is used in an organic light emitting diode display, the light emitting device 20 is only located in the non-display area and is used to provide light to the thin film transistor in the gate driving circuit.

In one example, the light emitting device 20 and the thin film transistor 10 connected to the light emitting device 20 are located in the same area, and are used to provide light to the thin film transistor 10 connected to the light emitting device 20. That is, when the thin film transistor 10 connected to the light emitting device 20 is located in the display area, the light emitting device 20 is located in the display area, and when the thin film transistor 10 connected to the light emitting device 20 is located in the non-display area, the light emitting device 20 is located in the non-display area.

In addition, the embodiment of the present application improves the on-state current of the thin film transistor through the light emitting device. On the one hand, it improves the transmittance of the display area of the array substrate. On the other hand, when the thin film transistor is manufactured, the thin film transistor can be appropriately reduced. The channel ratio is reduced to reduce the size of the thin film transistor, thereby realizing the narrow frame of the array substrate.

The array substrate provided by the embodiment of the present application includes: a first substrate, and thin film transistors and light emitting devices arranged on the first substrate. The first substrate includes a display area and a non-display area. The light emitting device is located in the non-display area. The light emitting device is connected to the thin film transistor and the low level signal terminal and is configured to emit light under the control of the low level signal terminal and the thin film transistor in a conductive state. In the embodiments of the present application, the light-emitting device is provided on the first substrate, and the on-state current of the thin film transistor is increased by emitting light from the light-emitting device, which not only prolongs the service life of the array substrate, but also improves the stability and display quality of the array substrate.

Further, in order to increase the on-state current of the thin film transistor without affecting the leakage current of the thin film transistor, the light emitting device 20 is also used to not emit light under the control of the low level signal terminal VGL and the thin film transistor 10 in the off state.

In an example, the voltage value of the signal of the low-level signal terminal VGL is equal to the voltage value of the signal of the drain electrode of the thin film transistor in the off state.

Further, FIG. 5 is a schematic structural diagram of a light emitting device provided by an embodiment of the application. As shown in FIG. 5, the light-emitting device 20 provided by the embodiment of the present application includes: a first electrode 21, an organic light-emitting layer 22 and a second electrode 23.

The first electrode 21 is located on the side of the organic light emitting layer 22 close to the first substrate, and the second electrode 23 is located on the side of the organic light emitting layer 22 away from the first substrate. The first electrode 21 and the second electrode 23 are used to connect the organic light emitting layer 22 An electric field is applied, and the organic light emitting layer 22 is used to emit light under the action of the electric field.

In the embodiments of the present application, the size of the first electrode, the second electrode and the organic light-emitting layer may be slightly smaller than the size of the gate electrode of the thin film transistor. Considering the alignment deviation of the manufacturing process, it will not affect other regions.

For example, the organic light emitting layer 22 can convert electrical energy into light energy. As shown in FIG. 5, the organic light emitting layer 22 includes: a hole injection layer 221, a hole transport layer 222, a light emitting layer 223, an electron transport layer 224 and an electron injection layer 225. The holes and electrons injected by the two electrodes 23 recombine in the organic light-emitting layer to generate excitons to realize light emission.

In an example, the host material of the hole injection layer 221 includes molybdenum trioxide, tungsten trioxide, or vanadium pentoxide, and the embodiment of the present application is not limited thereto.

In an example, the host material of the hole transport layer 222 may be polyparaphenylene vinylenes, polythiophenes, polysilanes, triphenylmethanes, triarylamines, hydrazones, pyrazolines, and azoles. , Carbazoles, butadienes or other similar materials with hole transport properties, the embodiments of the present application are not limited thereto.

In one example, the host material of the light-emitting layer 223 includes 4-(dinitrile methyl)-2-butyl-6-(1,1,7,7-tetramethyljulonidine-9-vinyl) -4H-pyran (DCJTB), 9,10-bis(β-naphthyl)anthracene (ADN), 4,4'-bis(9-ethyl-3-carbazole vinyl)-1,1'- Biphenyl (BCzVBi) or 8-hydroxyquinoline aluminum, the embodiments of the present application are not limited thereto.

In an example, the thickness of the electron transport layer 224 is 40 to 80 nanometers, and the host material of the electron transport layer includes 4,7-diphenyl-1,10-phenanthroline (Bphen), 1,2,4-tri Azole derivatives or 1,3,5-tris(1-phenyl-1H-benzimidazol-2-yl)benzene (TPBi), the material of the electron transport layer is high electron mobility and can effectively conduct electrons For organic molecular materials, the embodiments of this application are not limited thereto.

In an example, the host material of the electron injection layer 225 includes cesium carbonate, cesium fluoride, cesium azide, or lithium fluoride.

It should be noted that each layer of the organic light-emitting layer can be made by an evaporation process.

For example, the array substrate provided by the embodiment of the present application further includes a pixel electrode disposed in the display area, and the pixel electrode is located in the display area and connected to the drain electrode of the thin film transistor located in the display area.

In the array substrate provided by the embodiment of the application, there are two positional relationships between the thin film transistor and the light emitting device. The first position relationship is that the orthographic projection of the thin film transistor on the first substrate covers the orthographic projection of the light emitting device on the first substrate, that is, The light emitting device is located on the side of the thin film transistor away from the first substrate. The second positional relationship is that there is no overlap between the orthographic projection of the thin film transistor on the first substrate and the orthographic projection of the light emitting device on the first substrate, that is, the light emitting device is located on the thin film. The side surface of the transistor is not limited in the embodiment of the present application. It should be noted that FIG. 1 uses the second position relationship as an example for description, and FIG. 3 uses the first position relationship as an example for description, which is not limited in the embodiment of the present application.

In an example, FIG. 6 is a schematic structural diagram of an array substrate provided by an embodiment of the application. As shown in FIG. 6, when the thin film transistor 10 and the light emitting device 20 are in the first positional relationship, in the array substrate provided by the embodiment of the present application, the light emitting device 20 is located on the side of the thin film transistor 10 away from the first substrate 100, wherein, The first electrode 21 and the pixel electrode are formed by the same manufacturing process, and are connected to the drain electrode 16 of the thin film transistor 10, and the second electrode 23 is connected to a low-level signal terminal (not shown in the figure).

For example, in order to ensure that the light emitted by the light-emitting device is irradiated to the connected thin film transistor as much as possible, the first electrode 21 is a transmissive electrode, the second electrode 23 is a reflective electrode, and the first electrode 21 is used to make the organic light-emitting layer 22 emit light. The light is transmitted to the thin film transistor, and the second electrode 23 is used to reflect the light emitted from the organic light-emitting layer to the second electrode 23 to increase the utilization rate of the light.

As shown in FIG. 6, the thin film transistor includes: a gate electrode 12, a gate insulating layer 13, an active layer 14, a source electrode 15, a drain electrode 16, and a passivation layer 17, wherein the passivation layer 17 is provided with a via hole. The electrode 21 is connected to the drain electrode 16 of the thin film transistor through a passivation layer via.

In one example, since the first electrode 21 and the pixel electrode are formed by the same process, the thickness of the first electrode 21 is 400-1500 angstroms, and the material of the first electrode 21 is a transparent conductive material, such as indium tin oxide, zinc tin oxide Etc., the embodiments of this application do not make any limitation on this.

In an example, the thickness of the organic light-emitting layer 22 is 4000-9000 angstroms.

In an example, the material of the second electrode 23 is silver or aluminum, and the thickness of the second electrode 23 is 400-1500 angstroms.

In the embodiment of the present application, the working principle of the array substrate provided in FIG. 6 includes: providing the first electrode 21 with the signal of the drain electrode of the thin film transistor, and providing the second electrode 23 with the low-level signal of the low-level signal terminal VGL, when When the thin film transistor is turned on, the signal of the first electrode 21 is a high-level signal, and the signal of the second electrode 23 is a low-level signal. At this time, there is a voltage difference (general voltage) between the first electrode 21 and the second electrode 23. The difference is greater than 20 volts), the organic light-emitting layer 22 emits light under the action of the pressure difference, and generates light with a light intensity greater than 8000 nits. The light is incident on the thin film transistor, which increases the on-state current of the thin film transistor by more than 70%. When the transistor is in the off state, the signal of the first electrode 21 is pulled down to a low level signal, and the signal of the second electrode 23 is still a low level signal. At this time, there is no voltage difference between the first electrode and the second electrode. The organic light emitting layer 22 does not emit light, and therefore does not affect the leakage current of the thin film transistor.

In an example, FIG. 7 is a schematic structural diagram of an array substrate provided by an embodiment of the application. As shown in FIG. 7, when the thin film transistor 10 and the light emitting device 20 are in the second positional relationship, in the array substrate provided by the embodiment of the present application, the first electrode 21 and the gate electrode 12 of the thin film transistor are formed by the same manufacturing process, and The low-level signal terminal (not shown in the figure) is connected, the second electrode 23 and the source and drain electrodes of the thin film transistor are formed by the same process, and the drain electrode 16 of the thin film transistor is connected.

For example, in order to ensure that the light emitted by the light-emitting device is irradiated to the connected thin film transistor as much as possible, the first electrode 21 is a reflective electrode, the second electrode 23 is a transmissive electrode, and the first electrode 21 is used to irradiate the organic light-emitting layer toward the first electrode. The light from one electrode 21 is reflected back, and the second electrode 23 is used to make the light emitted by the organic light-emitting layer 22 transmit to the color film substrate and be reflected by the color film substrate to the thin film transistor to increase the utilization rate of light.

As shown in FIG. 7, the thin film transistor includes a gate electrode 12, a gate insulating layer 13, an active layer 14, a source electrode 15, a drain electrode 16 and a passivation layer 17.

In an example, the thickness of the first electrode 21 is 400-1500 angstroms, and the gate electrode 12 and the first electrode 21 of the thin film transistor are made of silver or aluminum, which is not limited in the embodiment of the present application.

In an example, the thickness of the second electrode 23 is 400-1500 angstroms, and the source electrode 15 and the drain electrode 16 and the second electrode 23 of the thin film transistor can be made of transparent conductive materials, such as indium tin oxide, zinc tin oxide, etc. , Can also be metal materials.

It should be noted that when the material of the second electrode 23 is a transparent conductive material, the second electrode 23 is a planar electrode; when the material of the second electrode 23 is metal, the second electrode 23 includes a plurality of strip electrodes And the connecting electrode, the connecting electrode is used to connect a plurality of strip electrodes, and also used to connect the drain electrode of the thin film transistor. It should be noted that FIG. 7 is illustrated by taking the manufacturing material of the second electrode as a metal as an example, which is not limited in the embodiment of the present application.

As shown in FIG. 7, the light-emitting device provided by the embodiment of the present application further includes: a first insulating layer 24, wherein the first insulating layer 24 and the passivation layer 17 of the thin film transistor are formed by the same process and are the same film layer, wherein , The orthographic projection of the first insulating layer 24 on the first substrate 100 covers the orthographic projection of the organic light-emitting layer 22 on the first substrate 100.

In the embodiment of the present application, the working principle of the array substrate provided in FIG. 7 includes: providing the first electrode 21 with the low-level signal of the low-level signal terminal VGL, and providing the second electrode 23 with the signal of the drain electrode of the thin film transistor, when When the thin film transistor is turned on, the signal of the first electrode 21 is a low-level signal, and the signal of the second electrode 23 is a high-level signal. At this time, there is a voltage difference between the first electrode 21 and the second electrode 23. When the difference is greater than 20 volts, the organic light-emitting layer 22 emits light under the action of the pressure difference, and generates light with a light intensity greater than 8000 nits. The light is incident on the thin film transistor, which increases the on-state current of the thin film transistor by more than 70%. When in the off state, the signal of the first electrode 21 is still a low-level signal, and the signal of the second electrode 23 is pulled down to a low-level signal. At this time, there is no voltage difference between the first electrode and the second electrode. The light emitting layer 22 does not emit light, and therefore does not affect the leakage current of the thin film transistor.

In an example, FIG. 8 is a schematic structural diagram of an array substrate provided by an embodiment of the application. As shown in FIG. 8, when the thin film transistor 10 and the light emitting device 20 are in the second positional relationship, in the array substrate provided by the embodiment of the present application, the first electrode 21 and the source and drain electrodes of the thin film transistor are formed by the same manufacturing process, and The drain electrode 16 of the thin film transistor is connected, and the second electrode 23 and the pixel electrode are formed by the same process, and are connected to a low-level signal terminal (not shown in the figure).

As shown in FIG. 8, the thin film transistor includes a gate electrode 12, a gate insulating layer 13, an active layer 14, a source electrode 15, a drain electrode 16 and a passivation layer 17.

In an example, the thickness of the first electrode 21 is 400-1500 angstroms, and the source and drain electrodes of the thin film transistor and the first electrode 21 are made of silver or aluminum, which is not limited in the embodiment of the present application.

In an example, the thickness of the second electrode 23 is 400 to 1500 angstroms, and the pixel electrode and the second electrode 23 can be made of transparent conductive materials, such as indium tin oxide, zinc tin oxide, etc. This embodiment of the application does not do this Any restrictions.

As shown in FIG. 8, the light-emitting device provided by the embodiment of the present application further includes: a second insulating layer 25, wherein the second insulating layer 25 and the gate insulating layer 13 of the thin film transistor are formed by the same process and are the same film layer, wherein , The orthographic projection of the second insulating layer 25 on the first substrate 100 covers the orthographic projection of the organic light-emitting layer 22 on the first substrate 100.

In the embodiment of the present application, the working principle of the array substrate provided in FIG. 8 includes: providing the first electrode 21 with the signal of the drain electrode of the thin film transistor, and providing the second electrode 23 with the low-level signal of the low-level signal terminal VGL, when When the thin film transistor is turned on, the signal of the first electrode 21 is a high-level signal, and the signal of the second electrode 23 is a low-level signal. At this time, there is a voltage difference between the first electrode 21 and the second electrode 23. When the difference is greater than 20 volts, the organic light-emitting layer 22 emits light under the action of the pressure difference, and generates light with a light intensity greater than 8000 nits. The light is incident on the thin film transistor, which increases the on-state current of the thin film transistor by more than 70%. When in the off state, the signal of the first electrode 21 is pulled down to a low level signal, and the signal of the second electrode 23 is still a low level signal. At this time, there is no voltage difference between the first electrode and the second electrode. The light emitting layer 22 does not emit light, and therefore does not affect the leakage current of the thin film transistor.

In an example, FIG. 9 is a schematic structural diagram of an array substrate provided by an embodiment of the application. As shown in FIG. 9, when the thin film transistor 10 and the light emitting device 20 are in the second positional relationship, in the array substrate provided by the embodiment of the present application, the first electrode 21 is located on the passivation layer 17 of the thin film transistor away from the first substrate. It is connected to the gate electrode or the drain electrode of the thin film transistor. The second electrode 23 and the pixel electrode are formed by the same manufacturing process, and are connected to a low-level signal terminal (not shown in the figure).

As shown in FIG. 9, the thin film transistor includes a gate electrode 12, a gate insulating layer 13, an active layer 14, a source electrode 15, a drain electrode 16 and a passivation layer 17.

As shown in FIG. 9, the light emitting device provided by the embodiment of the present application further includes: a first insulating layer 24 and a second insulating layer 25 located on the side of the first electrode close to the first substrate, and the second insulating layer 25 is located in the first insulating layer. The layer 24 is close to the side of the first substrate 100, wherein the first insulating layer 24 and the passivation layer 17 of the thin film transistor are formed by the same process and are the same film layer. The second insulating layer 25 is the same as the gate insulating layer 13 of the thin film transistor. It is formed by the same process and is the same film layer.

In the embodiment of the present application, the working principle of the array substrate provided in FIG. 9 includes: providing the first electrode 21 with the signal of the gate electrode or the drain electrode of the thin film transistor, and providing the second electrode 23 with the low level of the low-level signal terminal VGL Signal. When the thin film transistor is turned on, the signal of the first electrode 21 is a high-level signal, and the signal of the second electrode 23 is a low-level signal. At this time, there is a voltage difference between the first electrode 21 and the second electrode 23 Generally, the pressure difference is greater than 20 volts, and the organic light-emitting layer 22 emits light under the action of the pressure difference to generate light with a light intensity greater than 8000 nits. This light is incident on the thin film transistor, which increases the on-state current of the thin film transistor by more than 70%. When the thin film transistor is in the off state, the signal of the first electrode 21 is pulled down to a low level signal, and the signal of the second electrode 23 is still a low level signal. At this time, there is no voltage between the first electrode and the second electrode. Poorly, the organic light emitting layer 22 does not emit light, and therefore does not affect the leakage current of the thin film transistor.

FIG. 10A is a schematic structural diagram corresponding to FIG. 9, and FIG. 10B is a schematic structural diagram corresponding to FIG. 9. As shown in FIG. 10A, the first electrode is connected to the gate electrode of the thin film transistor. The light emitting device provided by the embodiment of the present application further includes: a third electrode 26. The third electrode 26 and the gate electrode 12 of the thin film transistor are formed by the same process, and The third electrode 26 is connected to the gate electrode 12 of the thin film transistor. The first insulating layer 24 and the second insulating layer 25 are provided with via holes. The first electrode 21 passes through the first insulating layer 24, the second insulating layer 25 and the third electrode 26. It is connected to the gate electrode 12 of the thin film transistor. As shown in FIG. 10B, the first electrode is connected to the drain electrode of the thin film transistor. The light emitting device provided by the embodiment of the present application further includes: a fourth electrode 27. The fourth electrode 27 and the drain electrode 16 of the thin film transistor are formed by the same process, and The fourth electrode 27 is connected to the source and drain electrodes of the thin film transistor, the first insulating layer 24 is provided with a via hole, and the first electrode 21 is connected to the drain electrode 16 of the thin film transistor through the first insulating layer 24 and the fourth electrode 27.

It should be noted that FIGS. 6 to 9 illustrate the thin film transistor as an example with a bottom gate structure. The thin film transistor in the embodiment of the present application may also have a bottom gate structure, which is not limited in the embodiment of the present application.

Based on the inventive concept of the foregoing embodiment, an embodiment of the present application provides a manufacturing method of an array substrate for manufacturing the aforementioned array substrate. FIG. 11 is a flowchart of a manufacturing method of an array substrate provided by an embodiment of the application. As shown in FIG. 11, the manufacturing method of the array substrate provided by the embodiment of the present application includes the following steps:

In step S1, a first substrate is provided.

For example, the first substrate includes a display area and a non-display area.

In step S2, a thin film transistor and a light emitting device are formed on the first substrate.

For example, the light emitting device is located in the non-display area. The light-emitting device is connected to the thin film transistor and the low-level signal terminal and is configured to emit light under the control of the low-level signal terminal and the thin film transistor in a conductive state.

The manufacturing method of the array substrate provided by the embodiment of the present application includes: providing a first substrate, the first substrate including: a display area and a non-display area, forming a thin film transistor and a light-emitting device on the first substrate, and the light-emitting device is located in the non-display area; The light-emitting device is connected to the thin film transistor and the low-level signal terminal and is configured to emit light under the control of the low-level signal terminal and the thin film transistor in a conductive state. In the embodiments of the present application, the light-emitting device is provided on the first substrate, and the on-state current of the thin film transistor is increased by emitting light from the light-emitting device, which not only prolongs the service life of the array substrate, but also improves the stability and display quality of the array substrate.

As an embodiment, step S2 includes, for example, forming a thin film transistor on a first substrate; and sequentially forming a first electrode, an organic light emitting layer, and a second electrode on a side of the thin film transistor away from the first substrate to form a light emitting device.

In this embodiment, the first electrode is connected to the drain electrode of the thin film transistor, and the second electrode is connected to the low-level signal terminal.

As another embodiment, step S2 includes, for example, forming a gate electrode and a first electrode on the first substrate using the same process; forming a gate insulating layer and an active layer in sequence on the side of the gate electrode away from the first substrate; An organic light-emitting layer is formed on the side of an electrode away from the first substrate; the source and drain electrodes and the second electrode are formed by the same process on the side of the organic light-emitting layer away from the first substrate.

In this embodiment, the first electrode is connected to the low-level signal terminal, and the second electrode is connected to the drain electrode of the thin film transistor.

In an example, after the source and drain electrodes and the second electrode are formed by the same process on the side of the organic light-emitting layer away from the first substrate, the manufacturing method of the array substrate provided by the embodiment of the present application further includes: The passivation layer and the first insulating layer are formed by the same process on one side of the substrate.

As yet another embodiment, a gate electrode is formed on the first substrate; a gate insulating layer and an active layer are sequentially formed on the side of the gate electrode away from the first substrate; the same process is used on the side of the active layer away from the first substrate Forming source and drain electrodes and first electrodes; forming a passivation layer on the side of the source and drain electrodes away from the first substrate; forming an organic light-emitting layer on the side of the first electrode away from the first substrate; forming the organic light-emitting layer away from the first substrate One side adopts the same manufacturing process to form the pixel electrode and the second electrode.

In an example, the manufacturing method of the array substrate provided by the embodiment of the present application further includes: forming a second insulating layer on the first substrate, wherein the second insulating layer is formed on the first substrate and the gate electrode is away from the first substrate. The same process is used to form the gate insulating layer on one side.

As another embodiment, step S2 includes, for example, forming a gate electrode on the first substrate; sequentially forming a gate insulating layer, an active layer, a source and drain electrode, and a passivation layer on the side of the gate electrode away from the first substrate; The side of the passivation layer away from the first substrate is formed to sequentially form a first electrode and an organic light-emitting layer; on the side of the organic light-emitting layer away from the first substrate, the pixel electrode and the second electrode are formed by the same process.

In this embodiment, the first electrode is connected to the gate electrode or the drain electrode of the thin film transistor, and the second electrode is connected to the low-level signal terminal.

In an example, the manufacturing method of the array substrate provided by the embodiment of the present application further includes: forming a second insulating layer on the first substrate, and forming a first insulating layer on the second insulating layer, wherein The second insulating layer and the formation of the gate insulating layer on the side of the gate electrode away from the first substrate use the same process, and the formation of the first insulating layer on the second insulating layer and the passivation layer on the source and drain electrodes use the same process.

In an example, before forming the second insulating layer on the first substrate, the method for manufacturing the array substrate provided by the embodiment of the present application further includes: forming a third electrode on the first substrate, wherein the third electrode is formed on the first substrate. The electrode and the gate electrode are formed on the first substrate using the same process, or, before the passivation layer is formed, further comprising: forming a fourth electrode on the second insulating layer, wherein the fourth electrode and the gate electrode are formed on the second insulating layer The same process is used to form the source and drain electrodes.

Based on the inventive concept of the foregoing embodiment, an embodiment of the present application provides a display panel. The display panel provided by the embodiment of the present application further includes: an array substrate and a color filter substrate.

The array substrate is the array substrate provided by the embodiments of the application, and its implementation principles and effects are similar, and will not be repeated here.

In an example, FIG. 12 is a schematic structural diagram of a display panel provided by an embodiment of the application. As shown in FIG. 12, the color filter substrate includes a second substrate 200 and a black matrix layer 30 and a protective layer 40 provided on the second substrate 200.

For example, the protective layer 40 is located on the side of the black matrix layer 30 close to the first substrate 100, and the orthographic projection of the black matrix layer 30 on the first substrate 100 covers the orthographic projection of the light emitting device 20 on the first substrate 100.

In this embodiment, the orthographic projection of the light-emitting device on the first substrate is covered by the orthographic projection of the black matrix layer on the first substrate, which can ensure that the light emitted by the light-emitting device for increasing the on-state current of the thin film transistor does not affect the performance of the array substrate. display.

It should be noted that the display panel described in the embodiments of the present application may be in a twisted nematic (TN) mode, a vertical (Vertical Alignment, VA) mode, and a plane switching technology (In-plane Switching, IPS for short). ) Mode, Advanced Super Dimension Switch (ADS) mode, or High Aperture Rate and Advanced Super Dimension Switch (HADS) mode. The embodiment of this application does not do anything about this limited.

The drawings of the embodiments of the present application only refer to the structures involved in the embodiments of the present application, and other structures can refer to common designs.

For clarity, in the drawings used to describe the embodiments of the present invention, the thickness and size of layers or microstructures are exaggerated. It will be understood that when an element such as a layer, film, region or substrate is referred to as being "on" or "under" another element, the element can be "directly" on or "under" the other element. Or there may be intermediate elements.

Although the embodiments disclosed in the present invention are as above, the content described is only the embodiments used to facilitate the understanding of the present invention, and is not intended to limit the present invention. Any person skilled in the art of the present invention can make any modifications and changes in the implementation form and details without departing from the spirit and scope of the present invention. However, the patent protection scope of the present invention still requires The scope defined by the appended claims shall prevail.

Claims

An array substrate, including:

The first substrate; and

The thin film transistor and the light emitting device arranged on the first substrate, wherein:

The first substrate has a display area and a non-display area;

The light emitting device is located in a non-display area, and the light emitting device is connected to a thin film transistor and a low level signal terminal and is configured to emit light under the control of the low level signal terminal and the thin film transistor in a conductive state.
The array substrate according to claim 1, wherein the light-emitting device is further configured to not emit light under the control of a low-level signal terminal and a thin film transistor in an off state.
The array substrate according to claim 1 or 2, wherein:

The light emitting device includes a first electrode, a second electrode, and an organic light emitting layer;

The first electrode is located on a side of the organic light-emitting layer close to the first substrate;

The second electrode is located on a side of the organic light emitting layer away from the first substrate;

The first electrode and the second electrode are configured to apply an electric field to the organic light emitting layer; and

The organic light emitting layer is configured to emit light under the action of the electric field.
3. The array substrate according to claim 3, wherein the orthographic projection of the thin film transistor on the first substrate covers the orthographic projection of the light emitting device on the first substrate.
The array substrate of claim 4, wherein:

The first substrate further includes pixel electrodes;

The light emitting device is located on a side of the thin film transistor away from the first substrate;

The first electrode and the pixel electrode are formed by the same manufacturing process, and are connected to the drain electrode of the thin film transistor;

The second electrode is connected to a low-level signal terminal;

The first electrode is a transmissive electrode; and

The second electrode is a reflective electrode.
3. The array substrate according to claim 3, wherein the orthographic projection of the thin film transistor on the first substrate and the orthographic projection of the light emitting device on the first substrate do not have an overlapping area.
The array substrate according to claim 6, wherein:

The first electrode and the gate electrode of the thin film transistor are formed by the same manufacturing process, and are connected to the low-level signal terminal;

The second electrode and the source and drain electrodes of the thin film transistor are formed by the same manufacturing process, and are connected to the drain electrode of the thin film transistor;

The first electrode is a reflective electrode; and

The second electrode is a transmissive electrode.
The array substrate according to claim 7, wherein:

The size of the first electrode, the second electrode and the organic light emitting layer is smaller than the size of the gate electrode of the thin film transistor.
The array substrate according to claim 6, wherein:

The first electrode and the source and drain electrodes of the thin film transistor are formed by the same process and are connected to the drain electrode of the thin film transistor;

The second electrode and the pixel electrode are formed by the same manufacturing process, and are connected to the low-level signal terminal;

The first electrode is a reflective electrode; and

The second electrode is a transmissive electrode.
The array substrate according to claim 6, wherein:

The first electrode is located on a side of the passivation layer of the thin film transistor away from the first substrate, and is connected to the gate electrode or the drain electrode of the thin film transistor;

The second electrode and the pixel electrode are formed by the same manufacturing process, and are connected to the low-level signal terminal;

The first electrode is a reflective electrode; and

The second electrode is a transmissive electrode.
The array substrate according to claim 1, wherein the array substrate is used in a thin film transistor liquid crystal display, and wherein the light emitting device is also located in a display area.
A display panel including:

The array substrate according to any one of claims 1-11; and

A color filter substrate arranged opposite to the array substrate.
The display panel of claim 12, wherein:

The color filter substrate includes a second substrate, and a black matrix layer and a protective layer disposed on the second substrate;

The protective layer is located on a side of the black matrix layer close to the first substrate; and

The orthographic projection of the black matrix layer on the first substrate covers the orthographic projection of the light-emitting device on the first substrate.
A method for manufacturing an array substrate includes:

Providing a first substrate, wherein the first substrate has a display area and a non-display area; and

A thin film transistor and a light emitting device are formed on the first substrate, wherein the light emitting device is located in a non-display area, and wherein the light emitting device is connected to the thin film transistor and a low-level signal terminal and is configured to be The terminal and the thin film transistor in the on state emit light under the control.
The method of claim 14, wherein said forming a thin film transistor and a light emitting device on the first substrate comprises:

Forming a thin film transistor on the first substrate; and

A first electrode, an organic light emitting layer, and a second electrode are sequentially formed on the side of the thin film transistor away from the first substrate to form a light emitting device.
The method of claim 14, wherein said forming a thin film transistor and a light emitting device on the first substrate comprises:

Forming the gate electrode and the first electrode on the first substrate using the same manufacturing process;

Sequentially forming a gate insulating layer and an active layer on the side of the gate electrode away from the first substrate;

Forming an organic light-emitting layer on the side of the first electrode away from the first substrate; and

The source and drain electrodes and the second electrode are formed on the side of the organic light emitting layer away from the first substrate using the same process.
The method of claim 14, wherein said forming a thin film transistor and a light emitting device on the first substrate comprises:

Forming a gate electrode on the first substrate;

Sequentially forming a gate insulating layer and an active layer on the side of the gate electrode away from the first substrate;

The source and drain electrodes and the first electrode are formed by the same process on the side of the active layer away from the first substrate;

Forming a passivation layer on the side of the source and drain electrodes away from the first substrate;

Forming an organic light-emitting layer on the side of the first electrode away from the first substrate; and

The pixel electrode and the second electrode are formed by the same manufacturing process on the side of the organic light-emitting layer away from the first substrate.
The method of claim 14, wherein said forming a thin film transistor and a light emitting device on the first substrate comprises:

Forming a gate electrode on the first substrate;

Forming a gate insulating layer, an active layer, a source drain electrode and a passivation layer in sequence on the side of the gate electrode away from the first substrate;

Forming a first electrode and an organic light emitting layer on the side of the passivation layer away from the first substrate;

The pixel electrode and the second electrode are formed on the side of the organic light-emitting layer away from the first substrate using the same process.
The method according to claim 14, wherein the array substrate is used in a thin film transistor liquid crystal display, and wherein the light emitting device is also located in a display area.