WO2020227980A1

WO2020227980A1 - Image sensor, and light intensity sensing system and method

Info

Publication number: WO2020227980A1
Application number: PCT/CN2019/087074
Authority: WO
Inventors: 王星泽; 赖嘉炜
Original assignee: 合刃科技（深圳）有限公司
Priority date: 2019-05-15
Filing date: 2019-05-15
Publication date: 2020-11-19
Also published as: CN111345032B; CN111345032A

Abstract

Disclosed in embodiments of the present invention is an image sensor, comprising a light-sensitive surface, the light-sensitive surface being provided with one or more pixel sensing areas, and the pixel sensing area comprising at least two groups of pixel sensing blocks; and optical thin film arrays provided on the surfaces of the pixel sensing blocks, wherein the thicknesses of the optical thin film arrays on the surfaces of the same group of pixel sensing blocks are the same, and the thicknesses of the optical thin film arrays on the surfaces of different groups of pixel sensing blocks are different; the thickness of the optical thin film array on the surface of the pixel sensing block corresponds to an exposure time delay of the pixel sensing block. In addition, disclosed in the embodiments of the present invention are a light intensity sensing method and system based on the image sensor, so that the environment light intensity can be rapidly sensed, thereby reducing response time of automatic exposure.

Description

Image sensor, light intensity sensing system and method

Technical field

The invention relates to the field of image processing, in particular to an image sensor, a light intensity sensing system and method.

Background technique

The image sensor in the traditional technology can usually only effectively detect low dynamic range (LDR: Low Dynamic Range) images. In order for the image sensor to capture useful information as much as possible, the limited dynamic range must be used within a suitable brightness range. Therefore, it is necessary to meter the shot scene to determine a reasonable exposure time for automatic exposure.

At present, most commercial camera equipment uses TTL (Through The Lens) method to integrate the sensor responsible for light metering behind the imaging lens to reduce the error between the imaging sensor and the light metering sensor. There are two types: separate and combined .

The separate type includes two sensors. One sensor is responsible for imaging and the other is responsible for detecting light intensity. Although it can provide better light metering results, it will add additional electronic components and light paths, resulting in an increase in cost and volume. It is mainly used in SLRs. Cameras and other high-end imaging equipment.

The combined type refers to the imaging sensor that is responsible for both imaging and light metering functions, and is mainly used in devices that require high integration such as mobile phone lenses. However, the traditional image sensor used for imaging can only gradually approach the exposure conditions according to the current ratio of overexposure and underexposure, which takes a long time and has a certain lag. In continuous shooting, when the brightness of the scene changes greatly, it is not suitable for occasions where the lighting conditions are frequently switched.

Summary of the invention

Based on this, in order to solve the problem in the prior art that the traditional imaging image sensor is used to adjust the exposure time for metering, an image sensor is proposed. The image sensor can be used to sense the intensity of the ambient light to adjust the exposure time. specific:

An image sensor includes a photosensitive surface on which one or more sensing pixel areas are arranged, and the sensing pixel area includes at least two sets of sensing pixel blocks;

The optical film arrays arranged on the surface of the sensing pixel block have the same thickness of the optical film array on the surface of the sensing pixel block of the same group, and the thickness of the optical film array on the surface of the sensing pixel block of different groups is different;

The thickness of the optical film array on the surface of a sensing pixel block corresponds to the exposure delay of the sensing pixel block.

In one of the embodiments, the thickness distribution of the optical film array on each group of sensing pixel blocks satisfies a logarithmic distribution based on the base attenuation rate of the optical film array.

In one of the embodiments, the groups of sensing pixel blocks in the same sensing pixel area are uniformly and sparsely arranged in the sensing pixel area; the thickness distribution of the sensing pixel blocks in the sensing pixel area is non-monotonous arrangement or misalignment arrangement.

In one of the embodiments, the sensing pixel area is arranged at the edge and/or the center of the photosensitive surface.

In one of the embodiments, the sensing pixel area is uniformly and sparsely arranged on the entire photosensitive surface.

In one of the embodiments, the manner in which the optical film array is disposed on the surface of the sensing pixel area includes at least one of deposition, patterning, or etching.

In addition, in order to solve the problem in the prior art that the adjustment speed of light metering and exposure time adjustment using traditional imaging image sensors is slow, a light intensity sensing method based on the aforementioned image sensor is also proposed.

A light intensity sensing method, based on the aforementioned image sensor, includes:

Acquiring the imaging brightness of the image sensor in the sensing pixel area under the preset exposure time;

Determine the target brightness, and obtain the target perception pixel block corresponding to the target brightness;

Acquiring a target exposure delay corresponding to the target sensing pixel block, where the target exposure delay corresponds to the thickness value of the optical film array on the surface of the target sensing pixel block;

The exposure time is adjusted according to the preset exposure duration and the target exposure delay.

In one of the embodiments, there are two or more target sensing pixel blocks;

The acquiring the target exposure delay corresponding to the target sensing pixel block includes:

Combining the relative positions of the target sensing pixel blocks on the photosensitive surface, calculate the weighted value of the exposure delay of two or more target sensing pixel blocks as the target exposure delay.

In one of the embodiments, the method further includes:

Receiving a photographing instruction to obtain the value of each pixel block on the photosensitive surface of the image sensor, the pixel block including a sensing pixel block;

For the value of the sensing pixel block, obtaining a brightness correction value corresponding to the thickness value of the optical film array on the surface of the sensing pixel block, and correcting the value of the sensing pixel block according to the brightness correction value;

For the value of the sensing pixel block beyond the brightness range, the sensing pixel block is interpolated and restored according to the value of the neighboring pixel block.

In addition, in order to solve the problem in the prior art that the adjustment speed of the light metering adjustment of the exposure time using the traditional imaging image sensor is relatively slow, a light intensity sensing system based on the aforementioned image sensor is also proposed.

A light intensity sensing system, comprising the aforementioned image sensor and a processor connected to the image sensor, the processor being used to obtain the imaging brightness of the image sensor in the sensing pixel area under a preset exposure time; to determine the target brightness , Obtain the target perception pixel block corresponding to the target brightness; obtain the target exposure delay corresponding to the target perception pixel block, the target exposure delay corresponds to the thickness value of the optical film array on the surface of the target perception pixel block; The preset exposure duration and the target exposure delay adjust the exposure time.

Implementing the embodiments of the present invention will have the following beneficial effects:

After the above-mentioned image sensor and the light intensity sensing system and method based on the above-mentioned image sensor are adopted, multiple levels of light transmission energy attenuation can be generated by sensing the thickness change of the optical film array disposed on the surface of the pixel area, resulting in different thicknesses on the surface The multiple levels of exposure delay corresponding to the sensing pixel blocks of the optical film array make it possible to obtain the imaging brightness level corresponding to multiple exposure durations with fewer exposures, which can be quickly determined by selecting the appropriate imaging brightness The optimal exposure time is less time-consuming to detect light intensity than traditional technology, and it is more adaptable to scenes with rapid changes in ambient light.

Description of the drawings

In order to explain the embodiments of the present invention or the technical solutions in the prior art more clearly, the following will briefly introduce the drawings needed in the embodiments. Obviously, the drawings in the following description are only some of the present invention. Embodiments, for those of ordinary skill in the art, without creative work, other drawings can be obtained from these drawings.

Figure 1 is a schematic diagram of the relationship between the brightness range of the LDR image imaging and the exposure time;

Figure 2 is an effect diagram of LDR images under different exposure durations;

Figure 3 is a schematic diagram of the step-by-step detection of the optimal exposure time in the traditional technology;

Figure 4 is a schematic diagram of a light intensity sensing system in an embodiment;

Fig. 5 is a schematic diagram of an image sensor in an embodiment;

6 is a schematic diagram of an optical film array sensing pixel block provided on the surface of an embodiment;

Fig. 7 is a distribution diagram of the thickness value of the optical film array on the surface of the sensing pixel block in the 4X4 sensing pixel area in an embodiment;

FIG. 8 is a distribution diagram of thickness values of the optical film array on the surface of the sensing pixel block in the 4X2 sensing pixel area in an embodiment;

FIG. 9 is a flowchart of a light intensity sensing method in an embodiment;

FIG. 10 is a schematic diagram of a light intensity sensing method for detecting the optimal exposure time in an embodiment;

Figure 11 is a schematic diagram of an imaging method in an embodiment;

Fig. 12 is a schematic diagram of the composition of a computer system running the aforementioned light intensity sensing method in an embodiment.

Detailed ways

The technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, rather than all the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative work shall fall within the protection scope of the present invention.

Due to the limited dynamic range of pictures taken by ordinary cameras, there are usually only 256 brightness ranges. Therefore, the pictures obtained by taking pictures are usually LDR (English: Low Dynamic Range, Chinese: Low Dynamic Range) images. When taking pictures, the external lighting environment is different. It will make the generated LDR images produce different exposure effects, and the same external lighting environment will produce different image effects with different exposure durations.

Referring to Figure 1, Figure 1 shows the brightness range of the LDR image and the change in the brightness range of the LDR image that is generated with the increase of exposure time. It can be seen from Figure 1 that the brightness range of the LDR image is a range window, and changes in the exposure time will not change the LDR brightness range, but only affect the lower limit of the brightness range. For example, when the exposure time is shorter T ₀ and longer T ₁ , the LDR image collected by the traditional image sensor can be seen that the lower limit of the brightness range of the LDR image corresponding to T _{0 is} compared with that corresponding to T ₁ The lower limit of the brightness range of the LDR image is lower, but the brightness range is the same.

Referring to Figure 2 again, an ordinary camera chooses a shorter, reasonable, and longer exposure time to obtain LDR image 1, LDR image 2, and LDR image 3 for shooting the same scene in the same light and dark environment. It can be seen that, For ordinary cameras, the short exposure time will darken the image, and the longer exposure time will overexpose the image. Only a reasonable exposure time can be used to capture relatively good images. Therefore, the automatic exposure technology in the traditional technology needs to obtain a reasonable exposure time corresponding to the scene by sensing the light intensity, and then perform imaging.

The light intensity sensing method in the traditional technology can be referred to as shown in FIG. 3, and its principle is a step-by-step detection method. The image sensor first collects the image under the exposure time T ₀ , and then analyzes whether the exposure of the image corresponding to the T ₀ is reasonable. If it is unreasonable, increase/decrease the exposure time of a step length ΔT, that is, the image sensor is in the exposure time again T ₁ image acquisition, and T ₁ = T ₀ + ΔT, then analyze the T ₁ corresponding to the exposure image is reasonable, if unreasonable, then continues to increase the exposure time [Delta] T of the length of a stepper captured image, if a reasonable The exposure time is T _best , then, as can be seen from Figure 3, the time it takes to find T _best is:

T _cost ＝T ₀ +T ₁ +....+T _best

That is, how many images are collected for analysis, it takes at least the sum of the exposure time required for collection, which leads to the long time-consuming solution of light intensity sensing using the image sensor used for imaging in the traditional technology. Adapt to scenes with rapid changes in light intensity.

For this reason, in order to solve the technical problem of the above-mentioned traditional technology that uses the image sensor for imaging to perform light intensity perception, it takes a long time and cannot adapt to the technical problem that the light intensity changes rapidly. In the embodiment of the present invention, a special method is proposed. A light intensity sensing system, as shown in Figure 4, includes:

The image sensor 10, and the processor 20 connected to the image sensor, wherein:

As shown in Figures 4 and 5, the image sensor 10 may be a flat-panel structure, including a photosensitive surface, on which a plurality of pixels are arranged in an orderly manner, that is, collecting light signals into electrical signals, and encoding the electrical signals It becomes the sampling point of the pixels of the image. Physically, the photosensitive surface is CCD (English: Charge-coupled Device, Chinese: Charge-coupled Device, a detection element that uses the amount of charge to indicate the size of the signal and transmits the signal by coupling) and CMOS (English: Complementary Metal Oxide Semiconductor, Chinese : Complementary metal oxide semiconductor, a photosensitive element).

In this embodiment, one or more perceptual pixel areas 12 are provided on the photosensitive surface, and the perceptual pixel areas 12 include at least two groups of perceptual pixel blocks (as shown in Fig. 1, pixels represented by different gray values in the perceptual pixel area 12 Piece). In this embodiment, as shown in FIG. 4, the sensing pixel area may be set at the edge and/or the center of the photosensitive surface. In another embodiment, the sensing pixel area is uniformly and sparsely arranged on the entire photosensitive surface.

Referring again to FIGS. 5 and 6, the image sensor 10 further includes an optical film array 14 arranged on the surface of the sensing pixel block. The optical film array 14 on the surface of the same group of sensing pixel blocks has the same thickness. The array thickness is different. The thickness of the optical film array on the surface of a sensing pixel block corresponds to the exposure delay of the sensing pixel block.

That is to say, FIG. 4 shows the photosensitive surface of the image sensor 10, one of the squares corresponds to a pixel block, and a pixel block can contain at least one pixel. For example, one pixel can be regarded as a pixel block, or 2× 2, or 3×3 pixels as a pixel block. The pixel blocks with gray scales in the sensing pixel area 12 in FIG. 4 are sensing pixel blocks provided with optical film arrays on the surface, and the gray scale represents the thickness of the optical film array on the surface of the sensing pixel blocks.

In this embodiment, the manner in which the optical film array is disposed on the surface of the sensing pixel area includes at least one of deposition, patterning, or etching.

The optical film arrays on the surface of different sensing pixel blocks can be the same or different. The sensing pixel blocks with the same thickness of the surface optical film array belong to the same group (the pixel blocks with the same gray scale in the sensing pixel area 12 in Figure 4 are the same group). The sensing pixel blocks with different thickness of the surface optical film array belong to different groups (the pixel blocks with different gray levels in the sensing pixel area 12 in Figure 4 belong to different groups)

Figures 5 and 6 show the shape and thickness distribution of the optical film arrays on the surface of different groups of sensing pixel blocks, including 4 sensing pixel blocks belonging to different groups, with thickness distributions d1, d2, d3, and d4 , And d1<d2<d3<d4, the four sensing pixel blocks are referred to as the thickness values below to distinguish them.

After the optical film array is set on the surface of the sensing pixel block, during the imaging process, when the light-transmitting optical film array enters the sensing pixel block, energy loss will occur due to the light transmittance of the optical film array, and the thicker the optical film array, The lower the light transmittance, the more energy loss is generated; and the size of the exposure time corresponds to the energy size of the light signal entering the sensing pixel block. The longer the exposure time, the greater the energy of the light signal entering the sensing pixel block. The higher the corresponding brightness, the brighter the picture; the shorter the exposure time, the smaller the energy of the light signal entering the sensing pixel block, and the lower the corresponding brightness, the darker the picture. Therefore, the energy loss caused by the light transmittance of the optical film array can be equivalent to the reduction in the amount of energy obtained by the reduction in exposure time. Therefore, the thickness of the optical film array on the surface of a sensing pixel block can correspond to the exposure of the sensing pixel block Delay.

For example, for 4 sensing pixel blocks with thickness distributions d1, d2, d3, and d4, since d1<d2<d3<d4, for the same ambient light, the energy of the light signal entering the sensing pixel block d1 is the most. The brightness detected by the block d1 is the highest, while the light signal energy entering the sensing pixel block d4 is the least, and the brightness detected by the sensing pixel block d4 is the lowest. Conversely, to achieve the same detection brightness, the energy of the light signal that needs to enter the sensing pixel block d1, d2, d3, and d4 is different, and the energy of the light signal that needs to enter the sensing pixel block d1 is the lowest, so only the shorter one is required. Exposure time is sufficient; the light signal energy required to enter the sensing pixel block d4 is the highest, and a longer exposure time is required to ensure sufficient light signal energy enters the sensing pixel block d4. Therefore, the thickness value of the optical film array on the surface of the sensing pixel block The change from d1 to d4 is equivalent to an exposure delay.

A pixel block without an optical film array on the surface is equivalent to a perceptual pixel block with a thickness of 0, that is, the corresponding exposure delay is 0 (real exposure time). The corresponding relationship between the thickness value of the sensing pixel block and the exposure delay can be recorded in advance. For example, the thickness value di of the optical film array on the surface of the sensing pixel block can be recorded corresponding to the exposure delay T _i , and then each sensing pixel block can be recorded on the photosensitive surface. The relative position of, that is, the mapping relationship between each photosensitive pixel block and its corresponding exposure delay T _i is established.

In an embodiment, the thickness distribution of the optical film array on each group of sensing pixel blocks satisfies the logarithmic distribution based on the base attenuation rate of the optical film array, that is:

di=log _n i×d1

This is because the transmittance of the optical film array satisfies t _i = n- ⁱ × t ₁ , where i is the spatial distribution of thickness values, t ₁ is the highest light transmittance, and ti is the light transmittance of the i-th thickness value, n is the basic attenuation rate. When the thickness distribution of the optical film array on each group of sensing pixel blocks meets the logarithmic distribution based on the base attenuation rate of the optical film array, it can be seen that the light transmittance ti corresponding to each group of sensing pixel blocks is linear Changes to make it easier to map the exposure delay.

Further, each group of sensing pixel blocks in the same sensing pixel area are uniformly and sparsely arranged in the sensing pixel area; the thickness distribution of the sensing pixel blocks in the sensing pixel area is a non-monotonic arrangement or a staggered arrangement.

Refer to Figure 7 and Figure 8. Figure 7 shows the thickness distribution of the optical film array on the surface of the sensing pixel block in a 4×4 sensing pixel area, where the color gray scale represents the thickness value, and the color gray scale The pixel blocks belong to the same group, and the surface has the same thickness of optical film array. It can be seen from Fig. 7 that each group of sensing pixel blocks are evenly and sparsely distributed in the entire 4×4 sensing pixel area. Figure 8 shows the thickness distribution of the optical film array on the surface of the sensing pixel block in a 4×2 sensing pixel area. It can be seen that the thickness distribution of the sensing pixel block in the sensing pixel area is non-monotonous or misaligned. That is, it does not reflect an increase or decrease of d1 and d4 to d2 and d3.

Setting the thickness distribution of each group of sensing pixel blocks in the same sensing pixel area in the above manner can prevent continuous image sampling with a larger brightness range from being interfered by noise, and thus stronger anti-noise performance.

In this embodiment, the processor 20 performs light intensity sensing based on the above-mentioned image sensor 10 provided with a sensing pixel area, which can be used to obtain the imaging brightness of the image sensor in the sensing pixel area under a preset exposure time; determine the target brightness, Acquiring a target sensing pixel block corresponding to a target brightness; acquiring a target exposure delay corresponding to the target sensing pixel block, where the target exposure delay corresponds to the thickness value of the optical film array on the surface of the target sensing pixel block; according to the The exposure time is adjusted by preset exposure time and the target exposure delay.

Specifically, in one embodiment, the processor 20 may be a computer device, which may rely on a computer program to execute a light intensity sensing method. The computer program may run on any computer system based on the von Neumann system. The device can be a smart phone, a personal computer, or other digital products with an image processing chip, such as a digital camera, a SLR camera, etc.

Specifically, the light intensity sensing method is shown in Figure 9 and includes:

Step S102: Obtain the imaging brightness of the image sensor in the sensing pixel area under the preset exposure time.

The preset exposure time is T ₀ , then the image sensor 10 is exposed for T ₀ time, then each pixel block on the image sensor 10 can receive the corresponding light signal, and the magnitude of the received light signal energy is reflected in the pixel block The brightness level. As shown in FIG. 10, for a common pixel block without an optical film array on the surface, the energy received is not attenuated, and the energy of the entire exposure time T ₀ is received.

For the photosensitive pixel blocks d1, it receives energy by the thickness d1 of the optical attenuation film array, the attenuation amount of energy equivalent to the energy of the lack of exposure delay T _1, i.e., the photosensitive pixel blocks equivalent to d1 Only the energy of the exposure time T ₀ -T ₁ is received. Then, the imaging brightness of the photosensitive pixel block d1 is lower than the brightness of an ordinary pixel block without an optical film array on the surface.

In the same way, for the photosensitive pixel block d2 and photosensitive pixel block d3, the received energy is attenuated by the optical film array with thicknesses d2 and d3, and the attenuation energy is equivalent to the lack of exposure delay T ₂ and T ₃ The energy is equivalent to that the photosensitive pixel blocks d2 and d3 only receive the energy of the exposure time T ₀ -T _{2 and} the energy of T ₀ -T ₃ . Since d1<d2<d3, the imaging brightness of the photosensitive pixel block d1>the imaging brightness of the photosensitive pixel block d2>the imaging brightness of the photosensitive pixel block d3.

As a result, imaging brightness levels corresponding to d1, d2, and d3 are generated.

Step S104: Determine the target brightness, and obtain the target perception pixel block corresponding to the target brightness.

For example, referring to FIG. 10 again, if the imaging brightness of d2 is found to be suitable through detection, the sensing pixel block with the thickness d2 of the optical film array provided on the surface is taken as the target sensing pixel block.

Step S106: Obtain a target exposure delay corresponding to the target sensing pixel block, where the target exposure delay corresponds to the thickness value of the optical film array on the surface of the target sensing pixel block.

As mentioned above, the value of the exposure delay corresponding to the sensing pixel block with the thickness of the optical film array d2 on the surface of the image sensor 10 is pre-recorded, that is, the exposure delay T ₂ shown in FIG. Set T ₂ as the target exposure delay.

Step S108: Adjust the exposure time according to the preset exposure time length and the target exposure delay.

That is to say, the exposure time is adjusted to T _best = T ₀ -T ₂ , so that the ordinary pixel block receives the energy of the light signal in the range of exposure time T ₀ -T _2. The imaging brightness of the ordinary pixel block is equivalent to the detection time, the exposure time is At T ₀ , the imaging brightness of the pixel block d2 is sensed, so that the exposure degree is consistent.

And a detailed analysis of the above process can find that in the above process of adjusting the exposure time, the time for adjustment is only one preset exposure time T ₀ , that is, after a time of T _cost = T ₀ on the image sensor 10 Exposure can be equivalently obtained by T ₀ -T ₁ , T ₀ -T ₂ ,... and multiple exposure markets of T ₀ -T _i depending on the transmittance of the optical film array on the surface of the pixel block. Then, by selecting the appropriate imaging brightness once, the exposure time corresponding to the imaging brightness can be quickly determined. Compared with the traditional technology, T _cost ＝T ₀ +T ₁ +...+ As far as T _{best is} concerned, fewer exposures are required and less time-consuming, so the efficiency is higher.

In this embodiment, further, there are two or more target sensing pixel blocks. For example, sensing pixel areas can be set in both the center area and edge area of the image sensor, and sensing pixel blocks with the same thickness can be set in different sensing pixel areas. In this case, the target perception corresponding to the target imaging brightness There are two or more pixel blocks.

In this case, obtaining the target exposure delay corresponding to the target sensing pixel block may include:

For example, the pixel block in the central area of the photosensitive surface usually corresponds to the object. Therefore, the perceptual pixel block located in the central area of the photosensitive surface should have a higher weight value, while the perceptual pixel block located at the edge of the photosensitive surface should have a lower value. The weighted value of, through weighted average, you can get the target exposure delay.

In one embodiment, since the sensing pixel block is also located on the photosensitive surface, the imaging information of the sensing pixel block should be considered in the imaging. As shown in FIG. 11, the imaging method further includes:

Step S202: Obtain the value of each pixel block on the photosensitive surface of the image sensor, where the pixel block includes a sensing pixel block.

Step S204: For the value of the sensing pixel block, obtain a brightness correction value corresponding to the thickness value of the optical film array on the surface of the sensing pixel block, and correct the value of the sensing pixel block according to the brightness correction value.

That is to say, for ordinary pixel blocks without optical film array on the surface, the pixel value is the actual imaging information; for sensing pixel blocks with optical film array on the surface, the brightness correction is reversed. For example, if the transmittance of the sensing pixel block d1 is attenuated by half, then during the imaging process, for the sensing pixel block d1, the brightness of the acquired imaging information needs to be corrected to be equivalent to the image captured when the transmittance is not attenuated The brightness value of the information.

Step S206: For the value of the perceptual pixel block that exceeds the brightness range, perform interpolation restoration on the perceptual pixel block according to the value of the neighboring pixel block.

In other words, the imaging information of the perceptual pixel block that is too bright or too dark even after correction can be interpolated and restored based on the imaging information of its neighboring pixel blocks. For example, for an over-exposed or over-dark perceptual pixel block, the value of the adjacent 3×3 pixel block can be selected, and the average value is calculated as the value of the perceptual pixel block. This will not lead to the loss of information in part of the sensing pixel block.

It should be noted that the “consistent” mentioned above means the same or the same meaning within a certain error range. Due to the semiconductor manufacturing process, the actual thickness of some optical thin film media will inevitably be caused by the theoretically designed thickness value. There is a deviation, but as long as it is within a certain error range, it will only affect the range of light transmittance of the optical film medium. When the overlap of the light transmittance range corresponding to the two photosensitive points is greater than a certain preset ratio, it can be considered as two The light transmittance is the same, or the thickness of the optical film medium corresponding to the photosensitive point has the same spatial distribution or thickness distribution.

In one embodiment, as shown in FIG. 12, FIG. 12 shows a computer system based on the von Neumann system that runs the above-mentioned light intensity sensing method. Specifically, it may include an external input interface 1001, a processor 1002, a memory 1003, and an output interface 1004 connected through a system bus. The external input interface 1001 may optionally include at least a network interface 10012 and a USB interface 10014. The memory 1003 may include an external memory 10032 (such as a hard disk, an optical disk, or a floppy disk, etc.) and an internal memory 10034. The output interface 1004 may at least include a display screen 10042 and other devices.

In this embodiment, the operation of this method is based on a computer program. The program file of the computer program is stored in the external memory 10032 of the aforementioned von Neumann system-based computer system 10, and is loaded into the internal memory 10034 during operation. It is then compiled into machine code and then transferred to the processor 1002 for execution, so that logically virtual modules are formed in the computer system 10 based on the von Neumann system. And during the execution of the above-mentioned light intensity sensing method, the input parameters are received through the external input interface 1001, and transferred to the memory 1003 for buffering, and then input to the processor 1002 for processing, and the processed result data may be buffered in the memory 1003 It is processed later or passed to the output interface 1004 for output.

The above embodiments are only used to illustrate the technical solutions of the present invention, but not to limit them; although the present invention has been described in detail with reference to the foregoing embodiments, those of ordinary skill in the art should understand that: The recorded technical solutions are modified, or some of the technical features are equivalently replaced; these modifications or replacements will not cause the essence of the corresponding technical solutions to deviate from the spirit and scope of the technical solutions of the embodiments of the present invention.

Claims

An image sensor comprising a photosensitive surface, characterized in that one or more sensing pixel areas are provided on the photosensitive surface, and the sensing pixel areas include at least two sets of sensing pixel blocks;

The optical film arrays arranged on the surface of the sensing pixel block have the same thickness of the optical film array on the surface of the sensing pixel block of the same group, and the thickness of the optical film array on the surface of the sensing pixel block of different groups is different;

The thickness of the optical film array on the surface of a sensing pixel block corresponds to the exposure delay of the sensing pixel block.
3. The image sensor according to claim 1, wherein the thickness distribution of the optical film array on each group of sensing pixel blocks satisfies a logarithmic distribution based on the base attenuation rate of the optical film array.
The image sensor according to claim 1, wherein each group of sensing pixel blocks in the same sensing pixel area are evenly and sparsely arranged in the sensing pixel area; the thickness of the sensing pixel block in the sensing pixel area The distribution is non-monotonic or misaligned.
The image sensor according to claim 1, wherein the sensing pixel area is arranged at an edge and/or a center position of the photosensitive surface.
The image sensor according to claim 1, wherein the sensing pixel area is uniformly and sparsely arranged on the entire photosensitive surface.
The image sensor according to any one of claims 1 to 5, wherein the manner in which the optical film array is disposed on the surface of the sensing pixel area includes at least one of deposition, patterning, or etching.
A light intensity sensing method, based on the image sensor according to any one of claims 1 to 6, characterized in that it comprises:

Acquiring the imaging brightness of the image sensor in the sensing pixel area under the preset exposure time;

Determine the target brightness, and obtain the target perception pixel block corresponding to the target brightness;

Acquiring a target exposure delay corresponding to the target sensing pixel block, where the target exposure delay corresponds to the thickness value of the optical film array on the surface of the target sensing pixel block;

The exposure time is adjusted according to the preset exposure duration and the target exposure delay.
The light intensity sensing method according to claim 7, wherein there are two or more target sensing pixel blocks;

The acquiring the target exposure delay corresponding to the target sensing pixel block includes:

Combining the relative positions of the target sensing pixel blocks on the photosensitive surface, calculate the weighted value of the exposure delay of two or more target sensing pixel blocks as the target exposure delay.
The light intensity sensing method according to claim 7, wherein the method further comprises:

Receiving a photographing instruction to obtain the value of each pixel block on the photosensitive surface of the image sensor, the pixel block including a sensing pixel block;

For the value of the sensing pixel block, obtaining a brightness correction value corresponding to the thickness value of the optical film array on the surface of the sensing pixel block, and correcting the value of the sensing pixel block according to the brightness correction value;

For the value of the sensing pixel block beyond the brightness range, the sensing pixel block is interpolated and restored according to the value of the neighboring pixel block.
A light intensity perception system, comprising the image sensor according to any one of claims 1 to 6, and a processor connected to the image sensor, wherein the processor is used to obtain the preset exposure time. The imaging brightness of the image sensor in the sensing pixel area; determining the target brightness, obtaining the target sensing pixel block corresponding to the target brightness; obtaining the target exposure delay corresponding to the target sensing pixel block, the target exposure delay and the target sensing pixel The thickness value of the optical film array on the surface of the block corresponds; the exposure time is adjusted according to the preset exposure time length and the target exposure delay.