WO2020211153A1 - Dispositif d'affichage à diodes électroluminescentes organiques blanches double face et son procédé de fabrication - Google Patents

Dispositif d'affichage à diodes électroluminescentes organiques blanches double face et son procédé de fabrication Download PDF

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Publication number
WO2020211153A1
WO2020211153A1 PCT/CN2019/088232 CN2019088232W WO2020211153A1 WO 2020211153 A1 WO2020211153 A1 WO 2020211153A1 CN 2019088232 W CN2019088232 W CN 2019088232W WO 2020211153 A1 WO2020211153 A1 WO 2020211153A1
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WO
WIPO (PCT)
Prior art keywords
light emitting
light
layer
color
emitting layer
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PCT/CN2019/088232
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English (en)
Chinese (zh)
Inventor
吴元均
袁伟
矫士博
Original Assignee
深圳市华星光电半导体显示技术有限公司
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Publication of WO2020211153A1 publication Critical patent/WO2020211153A1/fr

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
    • H10K59/353—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels characterised by the geometrical arrangement of the RGB subpixels

Definitions

  • the present invention relates to the field of display technology, in particular to a double-sided white light organic light emitting diode display device and a manufacturing method thereof.
  • OLED display devices have the advantages of self-luminescence, simple structure, light and thin, fast response speed, wide viewing angle, low power consumption, and flexible display. Therefore, OLED display devices have been popular among people in recent years. attention.
  • the OLED device used for display is one of the important elements in the OLED display device.
  • the color display of the OLED device is mainly realized by the following two methods.
  • One method is to use a fine metal mask (Fine Metal Mask, FMM) is used to prepare an OLED device with three sub-pixels of red, green and blue, but this method is limited by FMM, resulting in low resolution.
  • Another method is to realize color display through the combination of white light and color film layer.
  • the method of the organic light emitting diode (WOLED) display device is not limited by the fine metal mask, but the display device has the disadvantages of low color gamut, low energy utilization, and high power consumption.
  • the purpose of the present invention is to provide a double-sided white light organic light emitting diode display device and a manufacturing method thereof to solve the technical problems of low color gamut, low energy utilization rate, and high power consumption in the prior art.
  • the present invention provides a double-sided white light organic light emitting diode display device, which includes:
  • a first color film layer disposed under the light-emitting layer of the white light organic light-emitting diode, the first color film layer having red color resistance, green color resistance and blue color resistance;
  • a first quantum dot photoluminescent film is arranged between the white light organic light-emitting diode light-emitting layer and the first color film layer, and the first quantum dot photoluminescence film has the same structure as the first color film layer A first conversion part corresponding to the red color resist of and converting blue light into red light and a second conversion part corresponding to the green color resist of the first color film layer and converting blue light into green light;
  • a second quantum dot photoluminescent film is disposed between the white light organic light-emitting diode light-emitting layer and the second color film layer, and the second quantum dot photoluminescence film is connected to the second color film layer
  • a dam is disposed between the white light organic light-emitting diode light-emitting layer and the second color film layer, the dam has an opening facing downward, and the second quantum dot photoluminescent film is located in the opening in;
  • the light emitting layer of the white light organic light emitting diode has a laminated structure, and the laminated structure is selected from one of the following multilayer combinations: a blue light emitting layer and a yellow light emitting layer; a blue light emitting layer and a red light emitting layer and a yellow light emitting layer. Light emitting layer; blue light emitting layer, red light emitting layer, yellow light emitting layer and green light emitting layer; and blue light emitting layer, red light emitting layer and green light emitting layer.
  • the first quantum dot photoluminescence film and the second quantum dot photoluminescence film are quantum dot enhanced films.
  • the double-sided white light organic light emitting diode display device further includes a substrate, the substrate is a rigid substrate or a flexible substrate, the white light organic light emitting diode light emitting layer, The first color film layer, the first quantum dot photoluminescence film, the second color film layer, and the second quantum dot photoluminescence film are arranged on the substrate.
  • the material of the rigid substrate is glass
  • the material of the flexible substrate is polyimide
  • the present invention also provides a double-sided white light organic light emitting diode display device, which includes:
  • a first color film layer disposed under the light-emitting layer of the white light organic light-emitting diode, the first color film layer having red color resistance, green color resistance and blue color resistance;
  • a first quantum dot photoluminescent film is arranged between the white light organic light-emitting diode light-emitting layer and the first color film layer, and the first quantum dot photoluminescence film has the same structure as the first color film layer A first conversion part corresponding to the red color resist of and converting blue light into red light and a second conversion part corresponding to the green color resist of the first color film layer and converting blue light into green light;
  • a second quantum dot photoluminescent film is disposed between the white light organic light-emitting diode light-emitting layer and the second color film layer, and the second quantum dot photoluminescence film is connected to the second color film layer
  • a dam is disposed between the white light organic light-emitting diode light-emitting layer and the second color film layer, the dam has an opening facing downward, and the second quantum dot photoluminescent film is located in the opening in.
  • the white light organic light emitting diode light emitting layer has a laminated structure, and the laminated structure is selected from one of the following multilayer combinations: blue light emitting layer and yellow light emitting layer Layers; blue light emitting layer, red light emitting layer and yellow light emitting layer; blue light emitting layer, red light emitting layer, yellow light emitting layer and green light emitting layer; and blue light emitting layer, red light emitting layer and green light emitting layer.
  • the first quantum dot photoluminescence film and the second quantum dot photoluminescence film are quantum dot enhanced films.
  • the double-sided white light organic light emitting diode display device further includes a substrate, the substrate is a rigid substrate or a flexible substrate, the white light organic light emitting diode light emitting layer, the The first color film layer, the first quantum dot photoluminescence film, the second color film layer and the second quantum dot photoluminescence film are arranged on the substrate.
  • the material of the rigid substrate is glass
  • the material of the flexible substrate is polyimide
  • the present invention also provides a method for manufacturing a double-sided white light organic light emitting diode display device, which includes the following steps:
  • first color filter layer Forming a first color filter layer on the substrate, the first color filter layer having red color resistance, green color resistance and blue color resistance;
  • a first quantum dot photoluminescent film is formed on the first color film layer.
  • the first quantum dot photoluminescence film has a red color resist corresponding to the first color film layer and converts blue light into red A first conversion part of light and a second conversion part corresponding to the green color resist of the first color film layer and converting blue light into green light;
  • the second color filter layer Forming a second color filter layer on the transparent cover plate, the second color filter layer having red color resistance, green color resistance and blue color resistance;
  • a second quantum dot photoluminescence film is formed in the opening.
  • the second quantum dot photoluminescence film has a third photoluminescence film corresponding to the red color resistance of the second color film layer and converting blue light into red light.
  • a conversion part and a fourth conversion part corresponding to the green color resistance of the second color film layer and converting blue light into green light;
  • the substrate and the transparent cover plate are bonded together so that the second quantum dot photoluminescence film is opposite to the white light organic light emitting diode light emitting layer.
  • the white light organic light emitting diode light emitting layer has a laminated structure, and the laminated structure is selected from one of the following multilayer combinations: a blue light emitting layer and Yellow light emitting layer; blue light emitting layer and red light emitting layer and yellow light emitting layer; blue light emitting layer and red light emitting layer and yellow light emitting layer and green light emitting layer; and blue light emitting layer and red light emitting layer and green light Luminescent layer.
  • the first quantum dot photoluminescent film and the second quantum dot photoluminescent film are formed by inkjet printing or transfer, so The first quantum dot photoluminescence film and the second quantum dot photoluminescence film are quantum dot enhanced films.
  • the substrate is a rigid substrate or a flexible substrate
  • the material of the rigid substrate is glass
  • the material of the flexible substrate is polyimide
  • the material of the transparent cover plate is glass.
  • the present invention provides a double-sided white light organic light emitting diode display device and a manufacturing method thereof.
  • the quantum dot photoluminescence film By arranging the quantum dot photoluminescence film between the white light organic light emitting diode light-emitting layer and the color film layer, the quantum dot photoluminescence film has a conversion that corresponds to the red color resistance of the color film layer and converts blue light into red light. Part and the conversion part corresponding to the green color resistance of the color film layer and converting blue light into green light, the present invention can solve the technical problems of low color gamut, low energy utilization rate, and high power consumption in the prior art.
  • FIG. 1 is a schematic diagram of a cross-sectional structure of a double-sided white light organic light emitting diode display device according to the present invention.
  • FIG. 2 shows a cross-sectional view of a double-sided white light organic light emitting diode display device manufactured according to the first embodiment of the present invention.
  • FIG. 3 shows a cross-sectional view of a double-sided white light organic light emitting diode display device manufactured according to a second embodiment of the invention.
  • FIG. 1 is a schematic cross-sectional structure diagram of a double-sided white organic light emitting diode (WOLED) display device 1000 according to the present invention.
  • WOLED white organic light emitting diode
  • the present invention provides a double-sided white light organic light emitting diode display device 1000, which includes:
  • a white light organic light emitting diode light emitting layer 100 A white light organic light emitting diode light emitting layer 100;
  • a first color film layer 200 is disposed under the white light organic light emitting diode light-emitting layer 100, and the first color film layer 200 has a red color resist 210, a green color resist 220, and a blue color resist 230;
  • a first quantum dot photoluminescence film (first QD-PL Film) 300 is disposed between the white light organic light emitting diode light-emitting layer 100 and the first color film layer 200.
  • a quantum dot photoluminescent film 300 has a first conversion portion 310 corresponding to the red color resistance of the first color film layer 200 and converting blue light into red light, and a first conversion portion 310 corresponding to the green color resistance of the first color film layer And the second conversion part 320 that converts blue light into green light;
  • a second quantum dot photoluminescence film (second QD-PL Film) 500 is arranged between the white light organic light emitting diode light-emitting layer 100 and the second color film layer 400, and the first
  • the second quantum dot photoluminescent film 500 has a third conversion part 510 that corresponds to the red color resistance of the second color film layer 400 and converts blue light into red light, and corresponds to the green color resistance of the second color film layer
  • the fourth conversion part 520 that converts blue light into green light.
  • the thin film transistor (TFT) 150 is used to control the light emission of the white light organic light emitting diode light emitting layer 100.
  • the first quantum dot photoluminescence film 300 and the second quantum dot photoluminescence film 500 are quantum dot enhancement films (QD-EF).
  • the material for converting blue light into red light can be red quantum dot materials such as Cd x Zn 1-x S, Cd x Zn 1-x Se, InP, Ga x In 1-x P, etc.
  • the material for converting blue light into green light can be green quantum dot materials such as Cd x Zn 1-x S, Cd x Zn 1-x Se, InP, and GaxIn 1-x P.
  • the double-sided white light organic light emitting diode display device 1000 further includes a substrate 700 which is a rigid substrate or a flexible substrate.
  • the material of the rigid substrate may be glass.
  • the material of the flexible substrate may be polyimide.
  • the white light organic light-emitting diode light-emitting layer 100, the first color film layer 200, the first quantum dot photoluminescent film 300, the second color film layer 400, and the second quantum dot photoluminescent film 500 is provided on the substrate.
  • the light emitting layer 100 of the white light organic light emitting diode has a laminated structure.
  • FIG. 1 shows that the light emitting layer 100 of the white light organic light emitting diode has a three-layer structure.
  • the laminated structure is selected from one of the following multilayer combinations: blue light emitting layer and yellow light emitting layer; blue light emitting layer, red light emitting layer and yellow light emitting layer; blue light emitting layer, red light emitting layer and yellow light emitting layer Layer and green light emitting layer; and blue light emitting layer, red light emitting layer and green light emitting layer.
  • the double-sided white light organic light emitting diode display device 1000 further includes a pixel defining layer 850 (see FIGS. 2 and 3), and the pixel defining layer 850 is used to define a pixel area.
  • the double-sided white light organic light emitting diode display device 1000 further includes a transparent cover 800 arranged on the second color film layer 400, and the material of the transparent cover 800 may be glass to allow red light R, green light G, and blue light B , White light W passes through.
  • the double-sided white light organic light emitting diode display device 1000 further includes an upper polarizer 910 and a lower polarizer 920 which are respectively disposed on the outside.
  • the first quantum dot photoluminescent film 300 has a first conversion part 310 corresponding to the red color resistance of the first color film layer 200 and converting blue light into red light, and a green color resistance corresponding to the first color film layer.
  • the second quantum dot photoluminescent film 500 has a third conversion part 510 that corresponds to the red color resistance of the second color film layer 400 and converts blue light into red light
  • the fourth conversion part 520 corresponding to the green color resistance of the second color film layer and converting blue light into green light.
  • the white light organic light emitting diode light-emitting layer 100 emits light, the intensities of the red light R and the green light G are increased, and the intensities of the blue light B and white light W will not change, so that the display device 1000 has a high color gamut and high energy utilization. .
  • FIGS. 2 and 3 show cross-sectional views of a double-sided white light organic light emitting diode display device manufactured according to the first embodiment and the second embodiment of the present invention, respectively.
  • the structural design shown in FIG. 1 of the present disclosure can be applied to the display of thin film transistor (TFT) 150 with a bottom gate structure (as shown in FIG. 2) or a top gate structure (as shown in FIG. 3).
  • the thin film transistor 150 of FIGS. 2 and 3 both include a gate 10, a source 20, a drain 30, and a channel 50.
  • the structure of FIG. 3 further includes a shield line 40, and the shield line 40 is disposed on the substrate 700.
  • the WOLED device includes a first electrode 50, a white light organic light emitting diode light emitting layer 100 and a second electrode 60.
  • a black matrix 70 is provided on the transparent cover 800.
  • a dam 600 is disposed between the white light organic light emitting diode light-emitting layer 100 and the second color film layer 400, the dam 600 has a downward opening 610, and the second quantum dot photoluminescence film 500 is in the opening 610.
  • the ones shown in FIGS. 2 and 3 are the red pixel regions.
  • the light emitted from the light emitting layer 100 of the white light organic light emitting diode is converted by the first conversion part 310 of the first quantum dot photoluminescence film 300 and the third conversion part 510 of the second quantum dot photoluminescence film 500 ,
  • the emitted light 7000 is red light.
  • the present invention also provides a method for manufacturing a double-sided white organic light emitting diode (WOLED) display device 1000, which includes the following steps:
  • first color filter layer 200 Forming a first color filter layer 200 on the substrate 700, the first color filter layer 200 having a red color resist 210, a green color resist 220, and a blue color resist 230;
  • a first quantum dot photoluminescence film (first QD-PL Film) 300 is formed on the first color film layer 200, and the first quantum dot photoluminescence film 300 has The red color resist 210 of the first color film layer 200 corresponds to the first conversion portion 310 that converts blue light into red light, and the first conversion portion 310 that corresponds to the green color resist 220 of the first color film layer 200 and converts blue light into green light.
  • the dam 600 has an opening 610 corresponding to the second color filter layer 400;
  • a second quantum dot photoluminescence film (second QD-PL Film) 500 is formed in the opening 610.
  • the second quantum dot photoluminescence film 500 has the same structure as the second color film.
  • the red color resist 410 of the layer 400 corresponds to the third conversion part 510 which converts blue light into red light and the fourth conversion part 520 which corresponds to the green color resist 420 of the second color film layer 400 and converts blue light into green light ;and
  • the substrate 700 and the transparent cover 800 are bonded together so that the second quantum dot photoluminescent film 500 is opposite to the white light organic light emitting diode light emitting layer 100.
  • the first color film layer 200, the first quantum dot photoluminescence film 300, the white light organic light emitting diode light emitting layer 100, the second quantum dot photoluminescence film 500, and the second color film layer 400 is formed such that its positions correspond to each other to realize color display.
  • the method of manufacturing the double-sided white light organic light emitting diode display device 1000 further includes forming a passivation layer 65 between the second color film layer 400 and the second quantum dot photoluminescence film 500.
  • the substrate 700 is a rigid substrate or a flexible substrate.
  • the material of the rigid substrate may be glass.
  • the material of the flexible substrate may be polyimide.
  • the material of the transparent cover 800 may be glass, so that the light 7000 can pass through.
  • the white light organic light emitting diode light emitting layer 100 has a laminated structure, and the laminated structure is selected from one of the following multilayer combinations: a blue light emitting layer and a yellow light emitting layer; a blue light emitting layer, a red light emitting layer and a yellow light Light emitting layer; blue light emitting layer, red light emitting layer, yellow light emitting layer and green light emitting layer; and blue light emitting layer, red light emitting layer and green light emitting layer.
  • the first quantum dot photoluminescent film 300 and the second quantum dot photoluminescent film 500 are formed by inkjet printing or transfer printing.
  • the first quantum dot photoluminescence film 300 and the second quantum dot photoluminescence film 500 are quantum dot enhancement films (QD-EF).
  • the present invention provides a double-sided white light organic light emitting diode display device and a manufacturing method thereof.
  • the quantum dot photoluminescence film By arranging the quantum dot photoluminescence film between the white light organic light emitting diode light-emitting layer and the color film layer, the quantum dot photoluminescence film has a conversion that corresponds to the red color resistance of the color film layer and converts blue light into red light. Part and the conversion part corresponding to the green color resistance of the color film layer and converting blue light into green light, the present invention can solve the technical problems of low color gamut, low energy utilization rate, and high power consumption in the prior art.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)

Abstract

L'invention concerne un dispositif d'affichage à diodes électroluminescentes organiques blanches double face (1000) et son procédé de fabrication. Un film photoluminescent à points quantiques (300, 500) est disposé entre une couche électroluminescente à diodes électroluminescentes organiques blanches (100) et une couche de filtre coloré (200, 400), le film photoluminescent à points quantiques (300, 500) ayant une partie de conversion (310, 510) correspondant à une réserve colorée rouge (210, 410) de la couche de filtre coloré (200, 400) et convertissant la lumière bleue en lumière rouge, et une partie de conversion (320, 520) correspondant à une réserve colorée verte (220, 420) de la couche de filtre coloré (200, 400) et convertissant la lumière bleue en lumière verte. L'invention résout ainsi les problèmes techniques dans l'état de la technique d'une gamme de couleurs faible, d'une utilisation à faible énergie et d'une consommation d'énergie élevée.
PCT/CN2019/088232 2019-04-18 2019-05-24 Dispositif d'affichage à diodes électroluminescentes organiques blanches double face et son procédé de fabrication WO2020211153A1 (fr)

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CN201910312732.7A CN110085638B (zh) 2019-04-18 2019-04-18 双面白光有机发光二极管显示装置及其制造方法
CN201910312732.7 2019-04-18

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CN111312751A (zh) * 2019-11-19 2020-06-19 Tcl华星光电技术有限公司 一种显示装置及其制备方法
CN111524463B (zh) * 2020-05-29 2023-04-21 京东方科技集团股份有限公司 显示面板及其制作方法、显示装置
CN111628109A (zh) * 2020-06-10 2020-09-04 京东方科技集团股份有限公司 一种有机电致发光显示模组、显示装置
CN112038378B (zh) * 2020-09-07 2023-02-07 深圳市华星光电半导体显示技术有限公司 彩膜基板及其制作方法、显示面板
CN113270458B (zh) * 2021-05-14 2023-04-25 长沙惠科光电有限公司 正面发光的有机发光显示面板及其制造方法和显示装置
CN113270459B (zh) * 2021-05-14 2023-04-28 长沙惠科光电有限公司 背面发光的有机发光显示面板及其制造方法和显示装置

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