WO2020207897A1

WO2020207897A1 - Capacitor apparatus for an optical filter

Info

Publication number: WO2020207897A1
Application number: PCT/EP2020/059398
Authority: WO
Inventors: Christoph Daniel Kraemmer; Reinhold Roedel
Original assignee: Robert Bosch Gmbh
Priority date: 2019-04-11
Filing date: 2020-04-02
Publication date: 2020-10-15
Also published as: DE102019205184A1

Abstract

The invention relates to a capacitor apparatus for an optical filter with a first electrode structure, which is arranged on/over at least one substrate surface (52a), a conductor section (54), which contacts the first electrode structure and extends on/over at least the substrate surface (52a), and a second electrode structure (58), which comprises at least one conductive electrode material layer, wherein a conductor-spanning region (60a) of the conductive electrode material layer (60) is definable, which at least partly spans over the conductor section (54), and wherein the conductive electrode material layer is formed in such a way that the conductor-spanning region (60a) is supported by means of a first support region (60b) of the conductive electrode material layer, which contacts the substrate surface (52a) and/or at least one intermediate layer at least partly covering the substrate surface (52a) on a first edge side of the conductor section (54), and by means of a second support region (60c) of the conductive electrode material layer, which contacts the substrate surface (52a) and/or the at least one intermediate layer on a second edge side of the conductor section (54).

Description

description

title

Capacitor device for an optical filter

The invention relates to a capacitor device for an optical filter and an optical filter. The invention also relates to a

Manufacturing method for a capacitor device for an optical filter.

State of the art

From the prior art, such as US 2012/0050751 A1 and WO 2015/002028 A1, optical filter devices are known which have a capacitor made up of a first electrode structure and a second electrode structure, with one between the first

Electrode structure and the electrical voltage applied to the second electrode structure, a spectrum, such as a reflection and / or a transmission spectrum, of the optical filter device should be variable.

FIGS. La to le show schematic plan views and cross-sections to explain a method for producing a conventional capacitor, which is known to the applicant as internal prior art.

The conventional capacitor shown schematically in FIG. 1 a comprises a substrate 10 with a substrate surface 10a, a first electrode structure 12 and a second electrode structure 14 spanning the first electrode structure 12 on a side of the first electrode structure 12 facing away from the substrate 10 First line 16 contacting electrode structure 12 and having an electrically connected first contact 18 and a second line 20 electrically contacting second electrode structure 14 and having an electrically connected second contact 22 is electrical

Voltage (not equal to zero) can be applied between the first electrode structure 12 and the second electrode structure 14. FIG. 1 b shows an enlarged partial section of FIG. 1 a at a point at which the second electrode structure 14 spans the first line 16. It can be seen in FIG. 1b that at least one continuous etching opening 24 is formed in the second electrode structure 14, via which an etching process can be carried out during the production of the conventional capacitor shown schematically by means of FIGS. 1a to 1e.

FIGS. 1c and 1d show cross sections along a line AA 'of FIG. 1b to explain the method for producing the conventional capacitor of FIGS. In the method according to the prior art described here, a material layer 26 of at least one electrically conductive material is deposited on the substrate surface 10a and / or an at least partial cover (not shown) of the substrate surface 10a to form the first electrode structure 12 and the first line 16. The first

The electrode structure 12 and the first line 16 are structured out of the material layer 26, it being possible for further residual regions 28 of the first material layer 26 to remain (see FIG. 1e). A sacrificial layer 30 is then deposited. The sacrificial layer 30 is provided with at least one conductive layer

Electrode material layer 32 of the second electrode structure 14, the at least one continuous etching opening 24 being formed when the conductive electrode material layer 32 is structured. Fig. Lc shows an intermediate result after structuring the conductive

Electrode material layer 32.

The etching step is then carried out through the at least one continuous etching opening 24 in order to at least partially remove the sacrificial material layer 30. The removal of the sacrificial material layer 30 can above all be desired in other areas (not shown), in particular to expose adjustable subcomponents of the conventional capacitor.

FIG. 1d shows a cross section along a line AA 'of FIG. 1b after the etching step has been carried out. Another cross section along a line BB 'of FIG. 1b through the capacitor after the etching step has been carried out is shown in FIG. After performing the etching step, the electrode conductive material layer 32 of the second electrode structure 14 remains as one Free-standing structure which is often bent in the direction of the first line 16 due to an existing layer stress and / or due to an electrostatic attraction to the first line 16. In some cases this can also lead to an undesirable short circuit between the conductive

Lead electrode material layer 32 of second electrode structure 14 and first line 16.

Disclosure of the invention

The invention provides a capacitor device for an optical filter having the features of claim 1, an optical filter having the features of claim 8 and a manufacturing method for a capacitor device for an optical filter having the features of claim 10.

Advantages of the invention

The present invention creates capacitor devices, or optical filters equipped therewith, in which a first electrode structure and a line section contacting the first electrode structure

spanning second electrode structure has increased stability compared to the prior art due to its advantageously shaped conductive electrode material layer. Because the increased stability of the second

Electrode structure from the (three-dimensional) shape of its conductive

Resulting electrode material layer, the second electrode structure even when its conductive electrode material layer is formed with a

comparatively small layer thickness, a relatively large stress gradient in its conductive electrode material layer and / or a waiver of further (supporting) components of the second electrode structure in addition to its conductive electrode material layer has high stability. An undesirable bending of the conductive electrode material layer in the direction of the line section spanned by it therefore need not / hardly be feared. Above all, the risk of an undesired short circuit occurring between the conductive electrode material layer and the line section is also negligible. As will be explained in more detail below, the capacitor devices according to the present invention can be manufactured relatively simply and inexpensively. In particular, it is a simple and effective realization of laterally delimited electrode areas of the first electrode structure and the second

Electrode structure of a capacitor device according to the invention possible.

Everyone is at risk of parasitic occurrence

Capacitor device according to the invention significantly reduced in comparison with the prior art. It is also pointed out here that a contacting of the second electrode structure of the respective

Capacitor device at least partially spanned first

Electrode structure via the contacting the first electrode structure

Line section is comparatively easy to implement.

In an advantageous embodiment of the capacitor device there is a first stage in the conductive electrode material layer between its first

Support area and its line span area formed. Correspondingly, a second step can also be formed in the conductive electrode material layer between its second support region and its line spanning region. The shape of the conductive electrode material layer formed with the first stage and / or the second stage increases its flexural strength, so that even with a comparatively high electrical voltage between the conductive electrode material layer and the line section, no significant bending within the one "bridge-shaped" structure

having conductive electrode material layer occurs.

In particular, a first edge surface of the first step in the conductive electrode material layer can be oriented inclined at a first angle between 45 ° and 85 ° to the substrate surface. Correspondingly a second

Edge surface of the second step in the conductive electrode material layer be aligned inclined at a second angle between 45 ° and 85 ° to the substrate surface. Such an alignment of the first edge surface and / or the second edge surface leads to an enlargement of the respective surface, and thus contributes to an increase in the flexural rigidity of the conductive

Electrode material layer. It should be noted, however, that the first edge surface is the first step in the conductive electrode material layer and / or the second edge surface of the second step in the conductive

Electrode material layer can also be oriented inclined to the substrate surface by a first / second angle of 90 °.

Preferably, the one spanning the line section has

Line span area of the conductive electrode material layer has at least one through opening. In this case, if desired, the at least one through opening can optionally be used to carry out a processing step, such as, for example, as an etching access for carrying out an etching step. Due to the resulting increase in the flexural strength of the section spanning the line

Line span area, even if the at least one through opening is formed, advantageous mechanical stability of the conductive electrode material layer is ensured.

In a further advantageous embodiment of the capacitor device, the at least one intermediate layer at least partially covering the substrate surface comprises a material layer made of at least one electrically conductive material, from which the line section

is structured out, wherein the line section by means of at least one first separating trench extending along its first edge side from a first residual region of the material layer and by means of at least the first separating trench also extending along its second edge side or a second separating trench extending along its second edge side from a second residual region of the material layer is electrically insulated, and wherein the first support area of the conductive electrode material layer contacts the first remaining area of the material layer on the first edge side of the line section and the second support area of the conductive electrode material layer contacts the second remaining area of the material layer on the second edge side of the line section. An electrical insulation of the conductive

Electrode material layer from the line section, which is necessary for reliable operation of the capacitor device, is thus reliably ensured, since the conductive electrode material layer does not touch the line section itself. At the same time it is still a high mechanical stability of the conductive electrode material layer guaranteed due to its advantageous support on the remaining areas of the material layer.

Alternatively, the at least one intermediate layer at least partially covering the substrate surface can comprise a layer of at least one electrically conductive material, which the first support area of the conductive electrode material layer contacts on the first edge side of the line section and which the second support area of the conductive

Electrode material layer contacted on the second edge side of the line section, wherein the at least one intermediate layer at least partially covering the substrate surface additionally comprises an intermediate buffer made of at least one electrically insulating material, which is on the layer contacted by the first support area of the conductive electrode material layer and the second support area of the conductive electrode material layer is arranged from at least one electrically conductive material and on which the line section runs. A reliable electric one

Isolation of the line section from the substrate surface of the substrate is thus also ensured in the embodiment described here.

For example, the first electrode structure can be arranged immovably in relation to the substrate and the second electrode structure can be adjustable in relation to the substrate and attached to a mirror element, with a distance of the mirror element to a further mirror element by means of a between the first electrode structure and the second electrode structure applied electrical voltage can be varied. The one described here

The embodiment of the capacitor device is thus versatile.

The advantages described above are also guaranteed in the case of an optical filter with such a capacitor device. The optical filter can be a Fabry-Perot interferometer, for example. It is pointed out, however, that the optical filter can also be another spectrally tunable optical filter type instead of a Fabry-Perot interferometer.

Furthermore, executing a corresponding one also creates

Manufacturing method for a capacitor device for an optical filter the advantages explained above. It is expressly pointed out that the manufacturing method can be developed in accordance with the embodiments of the capacitor device described above.

Brief description of the drawings

Further features and advantages of the present invention are explained below with reference to the figures. Show it:

La to le are schematic plan views and cross-sections for explaining a method for producing a conventional one

Condenser;

2a to 2e are schematic plan views and cross sections for explaining an embodiment of the production method for a capacitor device for an optical filter;

3 shows a schematic cross section of a first embodiment of the capacitor device; and

4a and 4b are schematic partial representations of a second embodiment of the capacitor device.

Embodiments of the invention

2a to 2e show schematic top views and cross-sections for explaining an embodiment of the manufacturing method for a

Capacitor device for an optical filter.

When carrying out the manufacturing method, a first

Electrode structure 50 is formed on / over at least one substrate surface 52a of a substrate 52. During the production of the capacitor device, (at least) a first electrode structure 50 that makes contact is also used

Line section 54, which runs on / over at least the substrate surface 52a, is formed. Optionally, one can also be added to the first Line section 54 electrically connected first contact area 56 are formed, so that over the first contact area 56 and the first

Line section 54 a first potential Ul can be applied to the first electrode structure 50.

In addition, a second electrode structure 58 is formed with at least one conductive electrode material layer 60 such that the conductive

Electrode material layer 60 at least partially spans the first electrode structure 50 on a side of the first electrode structure 50 facing away from the substrate 52. In the embodiment of FIGS. 2a to 2e, the second electrode structure 58 only includes the conductive electrode material layer 60. In addition to the conductive electrode material layer 60, the second electrode structure 58 can, however, also include at least one further layer. As shown schematically in FIG. 2a, at least one second line section 62 contacting the conductive electrode material layer 60 and possibly a second contact area 64 electrically connected to the at least one second line section 62 can also be formed. Thus, while the first potential Ul is applied to the first electrode structure 50, at least one potential U2 and U3 that differs from the first potential Ul can be applied to the conductive electrode material layer 60 of the second electrode structure 58.

As can be seen in FIG. 2a, a line spanning area 60a of the conductive electrode material layer 60 can be defined such that the line spanning area 60a of the conductive electrode material layer 60 meets the first line section 54 on a side of the first line facing away from the substrate 52

Line section 54 spanned at least partially. FIG. 2b shows an enlarged partial section of FIG. 2a with the line spanning area 60a of the conductive electrode material layer 60 at least partially spanning the first line section 54. An opening 66 extending through the conductive electrode material layer 60 is also sketched in FIG. 2b, which is used as an etching access for the im Further described manufacturing method can be used. The through opening 66 is embodied, for example, as a “circular gap” in the conductive electrode material layer 60. The through opening 66 is used, for example, for the lateral electrical separation of Material surfaces to specifically reduce parasitic capacities. The

Continuous opening 66 can subdivide the conductive electrode material layer 60 in particular into two electrically insulated subregions such that a second potential U2 deviating from the first potential Ul is present at one of the two electrically insulated subregions and a third potential U3 deviating from the first potential Ul another of the two electrically isolated subregions can be applied.

As can be seen from the cross section of FIG. 2c along the line CC of FIG. 2b, in the embodiment described here the

Manufacturing method, the first line section 54 structured out of a material layer 68 made of at least one electrically conductive material. The material layer 68 can also be referred to as an intermediate layer disposed between the substrate surface 52a and the conductive electrode material layer 60. The material layer 68 can for example (doped)

Include silicon and / or at least one metal. The first line section 54 can be structured out of the material layer 68 in such a way that the first line section 54 by means of at least one first separating trench 70a extending along its first edge side from a first residual region 72a of the material layer 68 and by means of at least one second line section extending along its second edge side Separating trench 70b is electrically isolated from a second residual region 72b of the material layer 68. Further examples of how the first line section 54 can be designed are described below.

The first electrode structure 50 and / or the first contact region 56 are preferably also structured out of the material layer 68 made of at least one electrically conductive material. As can be seen in FIG. 2a, the first electrode structure 50 can be formed, for example, with a circular inner edge and a circular outer edge such that the first electrode structure 50 is parallel to the substrate surface 52a

aligned cross-sectional area has a "ring shape".

It is expressly pointed out that the formation of the first line section 54 and the first Electrode structure 50 (directly) on substrate surface 52a is only to be interpreted as an example. Alternatively, before the material layer 68 made of at least one electrically conductive material is deposited, at least one further intermediate layer (not shown), which at least partially covers the substrate surface 52a, can be deposited on the substrate surface 52a.

After at least the first line section 54 has been formed, and preferably also the first electrode structure 50 and / or the first contact region 56 electrically connected thereto, a sacrificial layer 74 is deposited which at least partially covers the first line section 54. In particular, the first electrode structure 50 and the first contact region 56 can also be at least partially covered with the sacrificial layer 74. The sacrificial layer 74 can be made of silicon dioxide, for example.

In contrast to the prior art described above, the

Sacrificial layer 74 during its deposition and / or by means of a subsequently executed sacrificial layer structuring structured in such a way that at least one first outer surface A1 of substrate surface 52a and / or the at least one intermediate layer on the first edge side of first line section 54 and a second outer surface A2 of substrate surface 52a and / or the at least one intermediate layer on the second edge side of the first line section 54 is free from the sacrificial layer 74. Merely by way of example, in the production method described here, a partial outer surface of the first residual region 72a is used as the first outer surface A1

Material layer 68 and, as the second outer surface A2, a partial outer surface of the second remaining region 72b of the material layer 68 kept free / exposed by the sacrificial layer 74. The possibly implemented sacrificial layer structuring, by means of which at least the first outer surface A1 and the second outer surface A2 are exposed from the sacrificial layer 74, can for example be an etching process.

After the sacrificial layer 74 has been formed with the sacrificial layer shape described in the preceding paragraph, in which at least the first outer surface A1 and the second outer surface A2 are free of the sacrificial layer 74 the conductive electrode material layer 60 of the second electrode structure 58 is deposited. As the electrode conductive material layer 60 can

for example (doped) silicon and / or at least one metal can be deposited. Due to the sacrificial layer shape of the sacrificial layer 74, the

subsequently deposited conductive electrode material layer 60 partly also deposited on the first outer surface A1 and the second outer surface A2. In this way, the electrode conductive material layer 60 is formed (without additional labor) such that the

Line spanning region 60a of the conductive electrode material layer 60 by means of a first support region 60b of the conductive electrode material layer 60, which the substrate surface 52a and / or the at least one

Intermediate layer contacted on the first edge side of the first line section 54, and by means of a second support region 60c the conductive

Electrode material layer 60, which the substrate surface 52a and / or the at least one intermediate layer on the second edge side of the first

Line section 54 contacted, is supported. It is expressly pointed out here that under the first support area 60b of the conductive electrode material layer 60, a first partial area of the conductive

Electrode material layer 60 and the second support area 60c of the conductive electrode material layer 60 is to be understood as a second partial area of the conductive electrode material layer 60.

The conductive electrode material layer 60 can thus on its

Line spanning region 60a, on which it spans first line section 54, can be formed with a “bridge-shaped” structure in a cross-sectional plane running perpendicular to first line section 54. Such a design of the conductive electrode material layer 60 improves its flexural rigidity without the conductive

Electrode material layer 60 is to be formed with a comparatively large layer thickness. Likewise, a large number of materials ensures which compared to one (later) used for etching the sacrificial layer 74

Etching material have a comparatively high etching resistance, even with a comparatively small layer thickness of the conductive electrode material layer 60 formed with the “bridge-shaped” structure, its desired stability. Due to the comparatively free choice of at least one Material of the conductive electrode material layer 60, the implementation of the manufacturing method described here is significantly simplified.

As can be seen in Fig. 2c, by means of the above-described

Sacrificial layer shape of the sacrificial layer 74, in particular a first step 60d can be formed in the conductive electrode material layer 60 between its first support region 60b and its line spanning region 60a and / or a second step 60e in the conductive electrode material layer 60 between its second support region 60c and its line spanning region 60a. The

The formation of the steps 60d and 60e in the conductive electrode material layer 60 advantageously contributes to increasing its flexural strength.

In the manufacturing process described here, the first

Support region 60b of the conductive electrode material layer 60 directly on the first outer surface A1 of the first residual region 72a of the material layer 68 and the second support region 60c of the conductive electrode material layer 60 directly on the second outer surface A2 of the second residual region 72b of FIG

Material layer 68 deposited. The first support area 60a of the conductive electrode material layer thus contacts the first remaining area 72a of the material layer 68 on the first edge side of the line section 54, while the second support area 60c of the conductive electrode material layer 60 contacts the second remaining area 72b of the material layer 68 on the second edge side of the line section 54. The remaining areas 72a and 72b of

Material layer 68 can thus optionally also be used to apply the at least one potential U2 and U3 that deviates from the first potential U1.

After the conductive electrode material layer 60 has been deposited, the conductive electrode material layer 60 can be additionally structured. For example, a circular outer edge of the conductive

Electrode material layer 60 are structured in such a way that the conductive electrode material layer 60 has a “circular shape” in a plan view of the substrate surface 52a. When the conductive electrode material layer 60 is deposited / structured, the through opening 66 is preferably also formed in the conductive electrode material layer 60. In addition to the Continuous opening 66 depicted in FIGS. 2b and 2e can have further continuous openings, in particular as regular openings

Pattern / grid of through openings, especially as hexagonal

Pattern / grid of through openings in the conductive

Electrode material layer 60 are formed. In addition, a

Minimum distance between the through openings of the regular pattern / grid of through openings can be chosen to be comparatively small, with the desired stability of the conductive

Electrode material layer 60 is guaranteed. Because the conductive

If the electrode material layer 60 itself has a comparatively high flexural rigidity at its line spanning region 60a spanning the first line section 54, at least the through opening 66 and possibly at least one further through opening can be structured without any problems even through the line spanning region 60a of the conductive electrode material layer 60.

In a further process step of the manufacturing process, a

Etching process carried out in which at least the through opening 66 is used as an etching access for an etching medium used for etching the sacrificial layer 74. Fig. 2d shows a cross section through the

Capacitor device after the etching process has been carried out along the line CC 'in FIG. 2b. A further cross section through the capacitor device present after the etching process has been carried out along a line DD ′ in FIG. 2b is shown in FIG. 2e. Although not shown graphically in FIGS. 2d and 2e, the etching process can also be used to release the first electrode structure 50 and / or the first line section 54, for example by at least partially at least one intermediate layer (not shown) that at least partially covers the substrate surface 10a is etched. The first electrode structure 50 and / or the first line section 54 can thus be used as a

"Self-supporting / suspended structure" remain.

As is clear from FIGS. 2d and 2e, the conductive

Electrode material layer 60, due to its advantageous “bridge-shaped” structure, is significantly higher than in the prior art mechanical stability. Thus, even in the event that the at least one potential U2 and U3 applied to the conductive electrode material layer 60 deviates significantly from the first potential Ul applied to the first line section 54, there is no bending of the line spanning region 60a of the conductive electrode material layer 60 towards the first line section 54 to fear. Even on the edges of the through the conductive

Through opening 66 structured through electrode material layer 60, no undesirable bending occurs. An undesirable "flexural slackness" of the line spanning region 60a of the conductive electrode material layer 60, which frequently occurs in the prior art, is prevented because of its advantageous "bridge-shaped" structure. The risk of a short circuit occurring between the electrical

Electrode material layer 60 and the first line section 54

negligible.

3 shows a schematic cross section of a first embodiment of the capacitor device.

Although not shown in FIG. 3, the capacitor device shown schematically by means of FIG. 3 also has a first electrode structure 50, which is arranged on / over at least one substrate surface 52a of a substrate 52, and a second electrode structure 58, which has at least one conductive electrode material layer 60 comprises, wherein the conductive

Electrode material layer 60 at least partially spans the first electrode structure 50 on a side of the first electrode structure 50 facing away from the substrate 52. FIG. 3 shows a line section 54 which makes contact with the first electrode structure 50 and which runs on / over at least the substrate surface 52a, a line spanning area 60a of the conductive electrode material layer 60 being definable which

Line section 54 at least partially spanned on a side of line section 54 facing away from substrate 52. In addition, the electrode conductive material layer 60 is shaped such that the

Line spanning region 60a of the conductive electrode material layer 60 by means of a first support region 60b of the conductive electrode material layer 60, which the substrate surface 52a and / or at least one of the Substrate surface 52a at least partially covering intermediate layer on a first edge side of the line section 54, and is supported by means of a second support region 60c of the conductive electrode material layer 60, which contacts the substrate surface 52a and / or the at least one intermediate layer on a second edge side of the line section 54. The capacitor device shown by means of the cross section in FIG. 3 thus also ensures the advantages already enumerated above.

In the capacitor device of FIG. 3, the at least one intermediate layer at least partially covering the substrate surface 52a comprises a layer 76 of at least one electrically conductive material, which the first support region 60b of the conductive electrode material layer 60 on the first edge side of the line section 54 contacts and which the second

Contacted support area 60c of conductive electrode material layer 60 on the second edge side of line section 54. In addition, the at least one that at least partially covers the substrate surface 52a

Intermediate layer additionally has an intermediate buffer 78 made of at least one electrically insulating material. The intermediate buffer 78 may e.g. be made of silicon-rich nitride or silicon oxide. The intermediate buffer 78 is arranged on the layer 76 of at least one electrically conductive material contacted by the first support area 60b of the conductive electrode material layer 60 and the second support area 60c of the conductive electrode material layer 60. In particular, the intermediate buffer 78 lies on one of the

Substrate 52 facing away from the layer 76 of at least one electrically conductive material. The line section 54 runs directly on the intermediate buffer 78. The line section 54 is thus arranged within an inner volume 80 enclosed by the conductive electrode material layer 60 and the layer 76 made of at least one electrically conductive material, and nevertheless by means of the intermediate buffer 78 from the conductive electrode material layer 60 and the layer 76 is electrically isolated. The application of a potential to the line spanning region 60a of the conductive

Electrode material layer 60 thus brings about a uniform distribution of the potential at the interfaces of the inner volume 80. A bending of the conductive electrode material layer 60 in the direction of the line section 54 is thus even with a significantly high electrical voltage between the Line section 54 and the conductive electrode material layer 60 are not to be feared.

With regard to further features of the capacitor device of FIG. 3, reference is made to the description of FIGS. 2a to 2e.

In an alternative embodiment of the capacitor device, the substrate surface 52a of the first support region 60b is the conductive one

Electrode material layer 60 on the first edge side of the line section 54 and contacted by the second support region 60c of the conductive electrode material layer 60 on the second edge side of the line section 54. In this case it can be advantageous if the intermediate buffer 78 partially covers the substrate surface 52a and the line section 54 runs over the intermediate buffer 78.

4a and 4b show schematic partial representations of a second

Embodiment of the capacitor device.

From the schematically reproduced by means of FIGS. 4a and 4b

Capacitor device is only half of its conductive

Electrode material layer 60 shown. An arrow 82 indicates a position of a mirror symmetry plane. Not figuratively

The half of the conductive electrode material layer 60 shown is thus mirror-symmetrical to the shown half of the conductive

Electrode material layer 60.

In the capacitor device of FIG. 4, too, a first step 60d is formed between its first support region 60b and its line spanning region 60a and a second step 60e between its second supporting region 60c and its line spanning region 60a in the conductive electrode material layer 60. However, a first edge surface of the first step 60b in the conductive electrode material layer 60 is oriented inclined at a first angle between 45 ° and 85 ° to the substrate surface 52a. Correspondingly, a second edge surface 84 of the second step 60c is also in the conductive electrode material layer 60 at a second angle h between 45 ° and 85 ° aligned inclined to the substrate surface 52a. An alignment of the first edge surface of the first step 60b and / or the second edge surface 84 of the first step 60c perpendicular to the substrate surface 52a is thus possible, but not necessary. In particular, by means of the alignment of the first

Edge surface of the first step 60b inclined by a first angle between 45 ° and 85 ° to the substrate surface 52a and / or the second edge surface 84 of the second step 60c inclined by a second angle h between 45 ° and 85 ° to the substrate surface 52a a "trapezoidal -bridge-shaped "structure can be achieved in a cross-sectional plane running perpendicular to the first line section 54, which causes an additional increase in the flexural rigidity of the conductive electrode material layer 60. As shown in FIG. 4b by means of an electrostatic simulation, the conductive

Electrode material layer 60 has good stability even when a comparatively high electrical voltage is applied between the conductive electrode material layer 60 and the spanned line section 54.

Alternatively, the first edge surface of the first step 60b in the conductive electrode material layer 60 and / or the second edge surface 84 of the second step 60c in the conductive electrode material layer 60 can also be inclined at a first / second angle of 90 ° to the substrate surface 52a

be aligned. The first stage 60b and the second stage 60c can thus be formed with great design freedom.

With regard to further features of the capacitor device of FIGS. 4a and 4b, reference is made to the description of FIGS. 2a to 2e and FIG. 3.

In each of the capacitor devices of FIGS. 3 and 4, the can

Line section 54 spanning line spanning region 60a of the conductive electrode material layer 60 have at least one through opening 66, although this is not shown in the figures.

Figures 2 to 4 explained above are only to be interpreted as a greatly simplified pictorial representation of the respective capacitor device. All of the capacitor devices described above can, for example, be part of an optical filter, such as in particular a Fabry-Perot interferometer, or as part of an optical filter / Fabry-Perot interferometer. The respective capacitor device can be used in the respective optical filter for varying / tuning a spectral range for which the optical filter is permeable.

For example, the respective first electrode structure 50 can be arranged immovably with respect to the substrate 52, while the second

Electrode structure 58 is adjustable with respect to the substrate 52 and is attached to a mirror element. A distance between the mirror element and a further mirror element can in this case be varied by means of an electrical voltage applied between the first electrode structure 50 and the second electrode structure 58. Any of the above

Capacitor devices can thus be used for an optical device with two mirror elements whose distance from one another can be varied, such as an optical filter, for example.

The mirror element can for example be a first Bragg reflector. The further mirror element can also be a second Bragg reflector. A cavity can be formed between the first Bragg reflector and the second Bragg reflector, so that a distance between the first Bragg reflector and the second Bragg reflector can also be referred to as the cavity length. The distance between the two Bragg reflectors, which can be referred to as the cavity length, is that between the first electrode structure 52 and the second

Electrode structure 58 applied electrical voltage can be varied. Since the cavity present between the first Bragg reflector and the second Bragg reflector has a strong transmission only for wavelengths of electromagnetic radiation whose half wavelength corresponds to an integral multiple of the distance between the two Bragg reflectors, the electrical Voltage between the electrode structures 50 and 58 thus also the spectral range for which the optical filter formed with the capacitor device is permeable can be changed.

Claims

claim

Claims 1. A capacitor device for an optical filter comprising: a substrate (52) having a substrate surface (52a); a first electrode structure (50) which is arranged on / above at least the substrate surface (52a); a line section (54) contacting the first electrode structure (50) and running on / over at least the substrate surface (52a); and a second electrode structure (58) comprising at least one conductive electrode material layer (60), wherein the conductive

Electrode material layer (60) at least partially spans the first electrode structure (50) on a side of the first electrode structure (50) facing away from the substrate (52), and wherein a

Line spanning region (60a) of the conductive electrode material layer (60) can be defined, which at least partially spans the line section (54) on a side of the line section (54) facing away from the substrate (52); characterized in that the conductive electrode material layer (60) is shaped in such a way that the line spanning region (60a) of the conductive electrode material layer (60) by means of a first support region (60b) of the conductive

Electrode material layer (60) which the substrate surface (52a) and / or at least one intermediate layer at least partially covering the substrate surface (52a) on a first edge side of the

Line section (54) contacted, and by means of a second support region (60c) of the conductive electrode material layer (60), which the

Substrate surface (52a) and / or the at least one intermediate layer on a second edge side of the line section (54) contacted, is supported.

2. Capacitor device according to claim 1, wherein a first step (60d) is formed in the conductive electrode material layer (60) between its first support region (60b) and its line spanning region (60a) and / or a second step (60e) is formed in the conductive

Electrode material layer (60) is formed between its second support region (60c) and its line spanning region (60a).

3. The capacitor device of claim 2, wherein a first edge surface of the first step (60d) in the conductive electrode material layer (60) inclined at a first angle between 45 ° and 85 ° to the

Substrate surface (52a) is aligned and / or a second

Edge surface (84) of the second step (60e) in the conductive

Electrode material layer (60) is oriented inclined at a second angle (h) between 45 ° and 85 ° to the substrate surface (52a).

4. Capacitor device according to one of the preceding claims, wherein the spanning the line section (54)

Line spanning region (60a) of the conductive electrode material layer (60) has at least one through opening (66).

5. Capacitor device according to one of the preceding claims, wherein the at least one the substrate surface (52a) at least partially covering intermediate layer a material layer (68) made of at least one electrically conductive material from which the

Line section (54) is structured out, comprises, wherein the

Line section (54) by means of at least one first separating trench (70a) extending along its first edge side from a first residual region (72a) of the material layer (68) and by means of at least the first separating trench (70a) also extending along its second edge side or one along its second edge side extending second separating trench (70b) is electrically insulated from a second residual region (72b) of the material layer (68), and wherein the first support region (60b) of the conductive electrode material layer (60) the first remaining area (72a) of the material layer (68) on the first edge side of the

Contacted line section (54) and the second support area (60c) of the conductive electrode material layer (60) contacts the second residual area (72b) of the material layer (68) on the second edge side of the line section (54).

6. capacitor device according to any one of claims 1 to 5, wherein the

at least one intermediate layer at least partially covering the substrate surface (52a) comprises a layer (76) of at least one electrically conductive material, which the first support region (60b) of the conductive electrode material layer (60) on the first edge side of the line section (54) contacts and which the second support area (60c) of the conductive electrode material layer (60) on the second edge side of the line section (54), and wherein the at least one intermediate layer at least partially covering the substrate surface (52a) additionally comprises an intermediate buffer (78) made of at least one electrically insulating material , which on the of the first support region (60b) of the conductive

Electrode material layer (60) and the second support region (60c) of the conductive electrode material layer (60) contacted layer (76) of at least one electrically conductive material is arranged and on which the line section (54) runs.

7. capacitor device according to one of the preceding claims,

wherein the first electrode structure (50) is arranged non-adjustable in relation to the substrate (52) and the second electrode structure (58) is adjustable in relation to the substrate (52) and is attached to a mirror element, and wherein a distance of the mirror element to a further mirror element by means of one between the first

Electrode structure (50) and the second electrode structure (58)

applied electrical voltage can be varied.

8. Optical filter with a capacitor device according to one of the

preceding claims.

9. The optical filter of claim 8, wherein the optical filter is a Fabry-Perot interferometer.

10. A manufacturing method for a capacitor device for an optical filter, comprising the steps of:

Forming a first electrode structure (50) on / over at least one substrate surface (52a) of a substrate (52);

Forming a structure that makes contact with the first electrode structure (50)

Line section (54), which on / over at least the

Substrate surface (52a) extends; and

Forming a second electrode structure (58) with at least one conductive electrode material layer (60) such that the conductive

Electrode material layer (60) at least partially spans the first electrode structure (50) on a side of the first electrode structure (50) facing away from the substrate (52), and a line spanning region (60a) of the conductive electrode material layer (60) can be defined which defines the line section ( 54) at least partially spanned on a side of the line section (54) facing away from the substrate (52); characterized in that the conductive electrode material layer (60) is shaped in such a way that the line spanning region (60a) of the conductive electrode material layer (60) by means of a first support region (60b) of the conductive

The substrate surface (52a) and / or the at least one intermediate layer on a second edge side of the line section (54) is contacted, supported.