WO2020199271A1 - Oled面板 - Google Patents

Oled面板 Download PDF

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Publication number
WO2020199271A1
WO2020199271A1 PCT/CN2019/083766 CN2019083766W WO2020199271A1 WO 2020199271 A1 WO2020199271 A1 WO 2020199271A1 CN 2019083766 W CN2019083766 W CN 2019083766W WO 2020199271 A1 WO2020199271 A1 WO 2020199271A1
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Prior art keywords
light
layer
transparent conductive
oled panel
cathode
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PCT/CN2019/083766
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English (en)
French (fr)
Inventor
李辉
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Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Publication of WO2020199271A1 publication Critical patent/WO2020199271A1/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/131—Interconnections, e.g. wiring lines or terminals

Definitions

  • This application relates to a display technology, in particular to an OLED panel.
  • the full-screen mobile phones launched by various mobile phone manufacturers mainly cut OLED (Organic Light-emitting Diode (Organic Light-emitting Diode) screens are the main ones, and the screen ratio can reach about 90%.
  • OLED Organic Light-emitting Diode
  • the aesthetics of the special-shaped cut screen is quite criticized by consumers.
  • the special-shaped cut area cannot be displayed normally. Therefore, it is difficult to increase the screen ratio of special-shaped cutting screens.
  • the embodiment of the present application provides an OLED panel to solve the technical problems of the existing OLED panel with a low screen-to-body ratio and abnormal display of irregular cut areas.
  • An embodiment of the present application provides an OLED panel, wherein the OLED panel includes:
  • the TFT array layer is arranged on the transparent substrate, and the TFT array layer includes a first light-transmitting area;
  • the TFT array layer includes metal traces, and the metal traces are arranged outside the first light-transmitting area;
  • the light-emitting function layer includes an anode, the anode includes a first transparent conductive layer, a non-transparent conductive layer, and a second transparent conductive layer arranged in sequence, and a hollow portion is formed on the non-transparent conductive layer;
  • the hollow part is correspondingly arranged in the second light transmission area.
  • the metal traces are made of transparent materials.
  • the light-emitting functional layer includes an anode, and the anode is made of a transparent conductive material.
  • the light-emitting functional layer includes a cathode, and the cathode includes a transparent conductive part;
  • the transparent conductive part is correspondingly arranged in the second light transmission area.
  • the area of the transparent conductive portion is greater than or equal to the opening area of the hollow portion.
  • the cathode includes a non-transparent conductive portion, and the non-transparent conductive portion is located on a peripheral side of the transparent conductive portion.
  • the light-emitting functional layer includes a cathode, and the cathode is made of a transparent conductive material.
  • the structure of the non-transparent conductive part is a phenanthroline derivative layer/lithium layer/ITO layer, or a calcium layer/ITO layer.
  • An embodiment of the present application also provides an OLED panel, including:
  • the TFT array layer is arranged on the transparent substrate, and the TFT array layer includes a first light-transmitting area;
  • the light-emitting function layer is arranged on the TFT array substrate, the light-emitting function layer includes a second light-transmitting area, and the second light-transmitting area is correspondingly arranged on the first light-transmitting area.
  • the TFT array layer includes metal traces, and the metal traces are arranged outside the first light-transmitting area.
  • the metal traces are made of transparent materials.
  • the light-emitting functional layer includes an anode, the anode includes a first transparent conductive layer, a non-transparent conductive layer, and a second transparent conductive layer arranged in sequence, and a hollow is formed on the non-transparent conductive layer. unit;
  • the hollow part is correspondingly arranged in the second light transmission area.
  • the light-emitting functional layer includes an anode, and the anode is made of a transparent conductive material.
  • the light-emitting functional layer includes a cathode, and the cathode includes a transparent conductive part;
  • the transparent conductive part is correspondingly arranged in the second light transmission area.
  • the area of the transparent conductive portion is greater than or equal to the opening area of the hollow portion.
  • the cathode includes a non-transparent conductive portion, and the non-transparent conductive portion is located on a peripheral side of the transparent conductive portion.
  • the cathode is made of a transparent conductive material.
  • the structure of the non-transparent conductive part is a phenanthroline derivative layer/lithium layer/ITO (Indium tin oxide, indium tin oxide) layer, or calcium layer/ITO layer.
  • the OLED panel of the present application arranges the first light-transmitting area of the TFT array layer and the second light-transmitting area of the light-emitting function layer in the light-transmitting area correspondingly, so that the electronic device can correspond to It is arranged under the light-transmitting area without cutting, which increases the screen-to-body ratio; it solves the technical problems of low screen-to-body ratio of the existing OLED panel and inability to display normally in the special-shaped cut area.
  • FIG. 1 is a schematic structural diagram of an OLED panel according to the first embodiment of the application
  • FIG. 2 is a schematic structural diagram of an OLED panel according to a second embodiment of the application.
  • FIG. 1 is a schematic structural diagram of an OLED panel according to a first embodiment of the application.
  • the OLED panel 100 of the first embodiment of the present application includes a light-transmitting area 10a.
  • the hierarchical structure of the OLED panel 100 includes a transparent substrate 11, TFT (Thin Film Transistor (thin film transistor) array layer 12, light-emitting function layer 13, and encapsulation layer 14.
  • TFT Thin Film Transistor
  • the transparent substrate 11 may be made of PET (Polyethylene Terephthalate), PC (Polycarbonate, polycarbonate) or ultra-thin transparent glass material, but it is not limited thereto.
  • the TFT array layer 12 is provided on the transparent substrate 11.
  • the TFT array layer 12 includes a first transparent region 12a.
  • the light-emitting function layer 13 is provided on the TFT array substrate 12.
  • the light-emitting function layer 13 includes a second light-transmitting area 13a.
  • the second light transmission area 13a is correspondingly arranged on the first light transmission area 12a.
  • the encapsulation layer 14 is provided on the light-emitting function layer 13.
  • the first transparent region 12a and the second transparent region 13a are correspondingly arranged and form a transparent region 10a.
  • the first light-transmitting area 12a of the TFT array layer 12 and the second light-transmitting area 13a of the light-emitting function layer 13 are correspondingly arranged on the light-transmitting area 10a, so that electronic devices can be arranged correspondingly There is no need to cut under the light-transmitting area 10a, which improves the screen-to-body ratio.
  • the electronic device can be a camera, a fingerprint recognition module or a sensor.
  • the TFT array layer 12 includes metal traces 121.
  • the metal trace 121 is arranged outside the first light-transmitting area 12a. Such an arrangement improves the light transmittance of the first light-transmitting area 12a, thereby increasing the light transmittance of the light-transmitting area 10a, and avoids blocking the light incident when the electronic device is in operation.
  • the metal trace 121 may be a light-transmitting conductive material or a light-impermeable conductive material.
  • the metal traces are made of transparent materials. Such as ITO.
  • the metal wiring may be arranged on the first light-transmitting area.
  • the light-emitting function layer 13 includes an anode 131, an organic light-emitting layer 132, and a cathode 133 that are sequentially arranged.
  • the anode 131 includes a first transparent conductive layer 1311, a non-transparent conductive layer 1312, and a second transparent conductive layer 1313 arranged in sequence.
  • a hollow portion 1314 is defined on the non-transparent conductive layer 1312.
  • the hollow portion 1314 is correspondingly disposed in the second light transmission area 13a. This arrangement improves the light transmittance of the second light-transmitting area 13a, and further improves the light transmittance of the light-transmitting area 10a.
  • the first transparent conductive layer 1311 and the second transparent conductive layer 1313 may be ITO layers.
  • the non-transparent conductive layer 1312 may be an Ag (silver) layer, but is not limited thereto.
  • the anode can also be made entirely of transparent conductive material, such as ITO.
  • transparent conductive material such as ITO.
  • the light-emitting function layer 13 includes a cathode 133.
  • the cathode 133 includes a transparent conductive portion 1331 and a non-transparent conductive portion 1332.
  • the non-transparent conductive portion 1332 is located on the peripheral side of the transparent conductive portion 1331.
  • the transparent conductive portion 1331 is correspondingly disposed in the second light transmission area 13a. This arrangement improves the light transmittance of the second light-transmitting area 13a, and further improves the light transmittance of the light-transmitting area 10a.
  • the structure of the non-transparent conductive portion 1332 is a phenanthroline derivative layer (BCP)/lithium layer (Li)/ITO layer, or a calcium layer (Ca)/ITO layer.
  • the phenanthroline derivative layer (BCP)/lithium layer (Li)/ITO layer is ITO laminated on the Li layer, and Li is laminated on the BCP.
  • the film forming method of the BCP/Li/ITO structure is evaporation and sputtering.
  • BCP serves as a protective layer for sputtering ITO. This structure can reduce the reflectivity and light absorption of the cathode, and increase the light transmittance in the visible light region to 90%.
  • the light transmittance of the Ca/ITO structure is about 80%.
  • the area of the transparent conductive portion 1331 is greater than or equal to the opening area of the hollow portion 1314 to obtain more light.
  • a transparent substrate 11 is provided.
  • a TFT array functional layer 12 is formed on the transparent substrate 11. Wherein, the metal wiring 121 is arranged on the peripheral side of the first light transmission area 12a.
  • a light-emitting function layer 13 is formed on the TFT array function layer 12. Specifically, the anode 131 is formed on the TFT array functional layer 12 first. A part of the non-transparent conductive layer 1312 is etched away in a region corresponding to the second light-transmitting area 13a by a photolithography process to form a hollow portion 1314. Or use a Mask (mask) to block the area corresponding to the second light-transmitting area 13a, so that when vapor deposition is used, a non-transparent conductive layer 1312 with a hollow portion 1314 is formed;
  • an organic light emitting layer 132 and a cathode 133 are sequentially formed on the anode 131.
  • the cathode 133 is formed by evaporation and sputtering.
  • an encapsulation layer 14 is formed on the light-emitting function layer 13.
  • FIG. 2 is a schematic structural diagram of an OLED panel according to a second embodiment of the application.
  • the OLED panel 200 of the second embodiment includes a light-transmitting area 20a.
  • the hierarchical structure of the OLED panel 200 includes a transparent substrate 21, a TFT array layer 22, a light-emitting function layer 23 and an encapsulation layer 24.
  • the light-emitting function layer 23 includes an anode 231, an organic light-emitting layer 232, and a cathode 233.
  • the cathode 233 is made of a transparent conductive material, such as ITO. Save process steps.
  • the OLED panel of the present application arranges the first light-transmitting area of the TFT array layer and the second light-transmitting area of the light-emitting function layer in the light-transmitting area correspondingly, so that the electronic device can correspond to It is arranged under the light-transmitting area without cutting, which increases the screen-to-body ratio; it solves the technical problems of low screen-to-body ratio of the existing OLED panel and inability to display normally in the special-shaped cut area.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

一种OLED面板（100），其包括透光区（10a），OLED面板（100）包括透明基板（11）、TFT阵列层（12）和发光功能层（13）；TFT阵列层（12）设置在透明基板（11）上，TFT阵列层（12）包括一第一透光区（12a），第一透光区（12a）对应设置在透光区（10a）上；发光功能层（13）设置在TFT阵列基板（12）上，发光功能层（13）包括一第二透光区（13a），第二透光区（13a）对应设置在透光区（10a）上；第一透光区（12a）和第二透光区（13a）对应设置。

Description

OLED面板 技术领域
本申请涉及一种显示技术，特别涉及一种OLED面板。
 背景技术
目前各手机厂商推出的全面屏手机主要以异形切割OLED（Organic Light-emitting Diode，有机发光二极管）屏幕为主，其屏幕占比可达到约90%左右。但异形切割屏幕的美观性颇为消费者诟病，同时因为前置摄像头等硬件的存在，使得异形切割区域无法正常显示。因此异形切割屏的屏幕占比提升变得举步维艰。
 技术问题
本申请实施例提供一种OLED面板，以解决现有的OLED面板屏占比低和异型切割区无法正常显示的技术问题。
 技术解决方案
本申请实施例提供一种OLED面板，其中，所述OLED面板包括：
透明基板；
TFT阵列层，设置在所述透明基板上，所述TFT阵列层包括第一透光区；
发光功能层，设置在所述TFT阵列基板上，所述发光功能层包括第二透光区，所述第二透光区对应设置在所述第一透光区上；
所述TFT阵列层包括金属走线，所述金属走线设置在所述第一透光区外；
所述发光功能层包括阳极，所述阳极包括依次设置的第一透明导电层、非透明导电层和第二透明导电层，所述非透明导电层上开设一镂空部；
所述镂空部对应设置在所述第二透光区。
在本申请的所述的OLED面板中，所述金属走线采用透明材料制成。
在本申请的所述的OLED面板中，所述发光功能层包括阳极，所述阳极由透明导电材料制成。
在本申请的所述的OLED面板中，所述发光功能层包括阴极，所述阴极包括一透明导电部分；
所述透明导电部分对应设置在所述第二透光区。
在本申请的所述的OLED面板中，所述透明导电部分的面积大于等于所述镂空部的开口面积。
在本申请的所述的OLED面板中，所述阴极包括非透明导电部分，所述非透明导电部分位于所述透明导电部分的周侧。
在本申请的所述的OLED面板中，所述发光功能层包括阴极，所述阴极由透明导电材料制成。
在本申请的所述的OLED面板中，所述非透明导电部分的结构为二氮菲衍生物层/锂层/ITO层，或钙层/ITO层。
本申请实施例还提供一种OLED面板，包括：
透明基板；
TFT阵列层，设置在所述透明基板上，所述TFT阵列层包括第一透光区；
发光功能层，设置在所述TFT阵列基板上，所述发光功能层包括第二透光区，所述第二透光区对应设置在所述第一透光区上。
在本申请的OLED面板中，所述TFT阵列层包括金属走线，所述金属走线设置在所述第一透光区的外侧。
在本申请的OLED面板中，所述金属走线采用透明材料制成。
在本申请的OLED面板中，所述发光功能层包括阳极，所述阳极包括依次设置的第一透明导电层、非透明导电层和第二透明导电层，所述非透明导电层上开设一镂空部；
所述镂空部对应设置在所述第二透光区。
在本申请的OLED面板中，所述发光功能层包括阳极，所述阳极由透明导电材料制成。
在本申请的OLED面板中，所述发光功能层包括阴极，所述阴极包括一透明导电部分；
所述透明导电部分对应设置在所述第二透光区。
在本申请的OLED面板中，所述透明导电部分的面积大于等于所述镂空部的开口面积。
在本申请的OLED面板中，所述阴极包括非透明导电部分，所述非透明导电部分位于所述透明导电部分的周侧。
在本申请的OLED面板中，所述阴极由透明导电材料制成。
在本申请的OLED面板中，所述非透明导电部分的结构为二氮菲衍生物层/锂层/ITO（Indium tin oxide，氧化铟锡）层，或钙层/ITO层。
 有益效果
相较于现有技术的OLED面板，本申请的OLED面板通过将TFT阵列层的第一透光区和发光功能层的第二透光区，对应设置在透光区，以使得电子器件可以对应设置在透光区的下方，无需进行切割，提高了屏占比；解决了现有的OLED面板屏占比低和异型切割区无法正常显示的技术问题。
 附图说明
为了更清楚地说明本申请实施例或现有技术中的技术方案，下面对实施例中所需要使用的附图作简单的介绍。下面描述中的附图仅为本申请的部分实施例，对于本领域普通技术人员而言，在不付出创造性劳动的前提下，还可以根据这些附图获取其他的附图。
图1为本申请第一实施例的OLED面板的结构示意图；
图2为本申请第二实施例的OLED面板的结构示意图。
 本发明的实施方式
请参照附图中的图式，其中相同的组件符号代表相同的组件。以下的说明是基于所例示的本申请具体实施例，其不应被视为限制本申请未在此详述的其它具体实施例。
请参照图1，图1为本申请第一实施例的OLED面板的结构示意图。本申请第一实施例的OLED面板100包括一透光区10a。且OLED面板100的层级结构包括透明基板11、TFT（Thin Film Transistor，薄膜晶体管）阵列层12、发光功能层13和封装层14。
具体的，透明基板11可以是由PET（Polyethylene Terephthalate，聚对苯二甲酸类塑料）、PC（Polycarbonate,聚碳酸酯）或超薄的透明玻璃材质制成，但不限于此。
TFT阵列层12设置在透明基板11上。TFT阵列层12包括一第一透光区12a。
发光功能层13设置在TFT阵列基板12上。发光功能层13包括一第二透光区13a。第二透光区13a对应设置在第一透光区12a上。
封装层14设置在发光功能层13上。
其中第一透光区12a和第二透光区13a对应设置且形成透光区10a。
本第一实施例的OLED面板100将TFT阵列层12的第一透光区12a和发光功能层13的第二透光区13a对应设置在透光区10a上，以使得电子器件可以对应设置在透光区10a的下方，无需进行切割，提高了屏占比。其中电子器件可以是摄像头、指纹识别模块或传感器等。
具体的，在本第一实施例的OLED面板100中，TFT阵列层12包括金属走线121。金属走线121设置在第一透光区12a的外侧。这样的设置，提高了第一透光区12a的透光率，进而提高透光区10a的透光率，避免遮挡电子器件工作时的入光。
其中金属走线121可以是透光导电材质，也可以是不透光导电材质。
在一些实施例中，金属走线采用透明材料制成。比如ITO。当金属走线采用透明材料制成时，金属走线可以设置在第一透光区上。
在本第一实施例的OLED面板100中，发光功能层13包括依次设置的阳极131、有机发光层132和阴极133。
阳极131包括依次设置的第一透明导电层1311、非透明导电层1312和第二透明导电层1313。非透明导电层1312上开设一镂空部1314。
镂空部1314对应设置在第二透光区13a。这样的设置，提高了第二透光区13a的透光率，进而提供透光区10a的透光率。
具体的，第一透明导电层1311和第二透明导电层1313可以是ITO层。非透明导电层1312可以是Ag（银）层，但并不限于此。
在一些实施例中，阳极也可以完全由透明导电材料制成，比如ITO。当阳极由透明导电材料制成时，便可以不用设置上述镂空部，以节省工艺步骤。
在本第一实施例的OLED面板100中，发光功能层13包括阴极133。阴极133包括一透明导电部分1331和非透明导电部分1332。非透明导电部分1332位于透明导电部分1331的周侧。
透明导电部分1331对应设置在第二透光区13a。这样的设置，提高了第二透光区13a的透光率，进而提供透光区10a的透光率。
具体的，非透明导电部分1332的结构为二氮菲衍生物层（BCP）/锂层（Li）/ITO层，或钙层（Ca）/ITO层。二氮菲衍生物层（BCP）/锂层（Li）/ITO层是ITO层叠在Li层上，Li层叠在BCP上。其中，BCP/Li/ITO结构的成膜方式为蒸镀和溅镀。BCP作为溅镀ITO的保护层。该结构可使阴极的反射率、光吸收度降低，在可见光区域的光穿透度提高到90%。而Ca/ITO结构的光透过率约为80%。
在本第一实施例的OLED面板100中，透明导电部分1331的面积大于等于镂空部1314的开口面积，以获取更多的光照。
本第一实施例的制作过程是：
提供一透明基板11。
在透明基板11上形成TFT阵列功能层12。其中，金属走线121设置在第一透光区12a的周侧。
在TFT阵列功能层12上形成发光功能层13。具体的，先在TFT阵列功能层12上形成阳极131。其中在对应于第二透光区13a的区域采用光刻工艺蚀刻掉部分的非透明导电层1312，以形成镂空部1314。或采用Mask（掩模板）遮挡对应于第二透光区13a的区域，以采用蒸镀时，形成具有镂空部1314的非透明导电层1312；
然后，在阳极131上依次形成有机发光层132和阴极133。其中，阴极133采用蒸镀和溅镀的方式形成。
最后，在发光功能层13上形成封装层14。
这样便完成了本第一实施例的制作过程。
请参照图2，图2为本申请第二实施例的OLED面板的结构示意图。本第二实施例的OLED面板200包括一透光区20a。且OLED面板200的层级结构包括透明基板21、TFT阵列层22、发光功能层23和封装层24。发光功能层23包阳极231、有机发光层232和阴极233。
在本第二实施例的OLED面板200与第一实施例的不同之处在于：阴极233由透明导电材料制成，比如ITO。节省了工艺步骤。
相较于现有技术的OLED面板，本申请的OLED面板通过将TFT阵列层的第一透光区和发光功能层的第二透光区，对应设置在透光区，以使得电子器件可以对应设置在透光区的下方，无需进行切割，提高了屏占比；解决了现有的OLED面板屏占比低和异型切割区无法正常显示的技术问题。
以上所述，对于本领域的普通技术人员来说，可以根据本申请的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本申请后附的权利要求的保护范围。

Claims (18)

  1. 一种OLED面板，其中，所述OLED面板包括：
    透明基板；
    TFT阵列层，设置在所述透明基板上，所述TFT阵列层包括第一透光区；
    发光功能层，设置在所述TFT阵列基板上，所述发光功能层包括第二透光区，所述第二透光区对应设置在所述第一透光区上；
    所述TFT阵列层包括金属走线，所述金属走线设置在所述第一透光区外；
    所述发光功能层包括阳极，所述阳极包括依次设置的第一透明导电层、非透明导电层和第二透明导电层，所述非透明导电层上开设一镂空部；
    所述镂空部对应设置在所述第二透光区。
  2. 根据权利要求1所述的OLED面板，其中，所述金属走线采用透明材料制成。
  3. 根据权利要求1所述的OLED面板，其中，所述发光功能层包括阳极，所述阳极由透明导电材料制成。
  4. 根据权利要求1所述的OLED面板，其中，所述发光功能层包括阴极，所述阴极包括一透明导电部分；
    所述透明导电部分对应设置在所述第二透光区。
  5. 根据权利要求4所述的OLED面板，其中，所述透明导电部分的面积大于等于所述镂空部的开口面积。
  6. 根据权利要求4所述的OLED面板，其中，所述阴极包括非透明导电部分，所述非透明导电部分位于所述透明导电部分的周侧。
  7. 根据权利要求1所述的OLED面板，其中，所述发光功能层包括阴极，所述阴极由透明导电材料制成。
  8. 根据权利要求6所述的OLED面板，其中，所述非透明导电部分的结构为二氮菲衍生物层/锂层/ITO层，或钙层/ITO层。
  9. 一种OLED面板，其中，所述OLED面板包括：
    透明基板；
    TFT阵列层，设置在所述透明基板上，所述TFT阵列层包括第一透光区；
    发光功能层，设置在所述TFT阵列基板上，所述发光功能层包括第二透光区，所述第二透光区对应设置在所述第一透光区上。
  10. 根据权利要求9所述的OLED面板，其中，所述TFT阵列层包括金属走线，所述金属走线设置在所述第一透光区外。
  11. 根据权利要求10所述的OLED面板，其中，所述金属走线采用透明材料制成。
  12. 根据权利要求9所述的OLED面板，其中，所述发光功能层包括阳极，所述阳极包括依次设置的第一透明导电层、非透明导电层和第二透明导电层，所述非透明导电层上开设一镂空部；
    所述镂空部对应设置在所述第二透光区。
  13. 根据权利要求9所述的OLED面板，其中，所述发光功能层包括阳极，所述阳极由透明导电材料制成。
  14. 根据权利要求12所述的OLED面板，其中，所述发光功能层包括阴极，所述阴极包括一透明导电部分；
    所述透明导电部分对应设置在所述第二透光区。
  15. 根据权利要求14所述的OLED面板，其中，所述透明导电部分的面积大于等于所述镂空部的开口面积。
  16. 根据权利要求14所述的OLED面板，其中，所述阴极包括非透明导电部分，所述非透明导电部分位于所述透明导电部分的周侧。
  17. 根据权利要求12所述的OLED面板，其中，所述发光功能层包括阴极，所述阴极由透明导电材料制成。
  18. 根据权利要求16所述的OLED面板，其中，所述非透明导电部分的结构为二氮菲衍生物层/锂层/ITO层，或钙层/ITO层。
PCT/CN2019/083766 2019-03-29 2019-04-23 Oled面板 Ceased WO2020199271A1 (zh)

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