WO2020190318A1 - Parameter-stable misregistration measurement amelioration in semiconductor devices - Google Patents

Parameter-stable misregistration measurement amelioration in semiconductor devices Download PDF

Info

Publication number
WO2020190318A1
WO2020190318A1 PCT/US2019/047797 US2019047797W WO2020190318A1 WO 2020190318 A1 WO2020190318 A1 WO 2020190318A1 US 2019047797 W US2019047797 W US 2019047797W WO 2020190318 A1 WO2020190318 A1 WO 2020190318A1
Authority
WO
WIPO (PCT)
Prior art keywords
misregistration
parameter
measurement
stable
sets
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US2019/047797
Other languages
French (fr)
Inventor
Vladimir Levinski
Yuri Paskover
Sharon AHARON
Amnon Manassen
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
KLA Corp
Original Assignee
KLA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by KLA Corp filed Critical KLA Corp
Priority to KR1020217033551A priority Critical patent/KR102509764B1/en
Priority to CN201980093578.7A priority patent/CN113574643B/en
Priority to JP2021556496A priority patent/JP7177949B2/en
Priority to US16/496,918 priority patent/US11101153B2/en
Priority to TW109108584A priority patent/TWI845639B/en
Publication of WO2020190318A1 publication Critical patent/WO2020190318A1/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0606—Position monitoring, e.g. misposition detection or presence detection
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/21—Polarisation-affecting properties
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/47—Scattering, i.e. diffuse reflection
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/8851—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
    • H10P74/235—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes comprising optical enhancement of defects or not-directly-visible states
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
    • H10P74/238—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes comprising acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection or in-situ thickness measurement
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/27—Structural arrangements therefor
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B2210/00—Aspects not specifically covered by any group under G01B, e.g. of wheel alignment, caliper-like sensors
    • G01B2210/56—Measuring geometric parameters of semiconductor structures, e.g. profile, critical dimensions or trench depth
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W46/00—Marks applied to devices, e.g. for alignment or identification

Definitions

  • the present invention relates measurement of misregistration in the manufacture of semiconductor devices generally.
  • the present invention seeks to provide an improved methods and systems for measurement of misregistration in the manufacture of semiconductor devices.
  • a parameter-stable misregistration measurement amelioration method including providing a wafer, including a plurality of multilayered semiconductor devices formed thereon, selected from a batch wafers intended to be identical, using a misregistration metrology tool to measure misregistration at multiple sites between at least a first layer and a second layer of the wafer, using a plurality of sets of measurement parameters, thereby generating measured misregistration data for each of the sets of measurement parameters, identifying and removing a parameter-dependent portion and a mean error portion from the measured misregistration data for the wafer for each of the sets of measurement parameters, thereby generating ameliorated parameter-stable ameliorated misregistration data for the wafer.
  • the sets of measurement parameters comprise at least multiple wavelengths of light used in misregistration measurement.
  • the identifying the parameter-dependent portion and the mean error portion includes identifying a parameter-dependent portion for the measured misregistration data for each of the sets of measurement parameters, identifying at least one principal component of the parameter-dependent portion of the misregistration data for each of the sets of measurement parameters, identifying a weighting coefficient for the at least one principal component of the parameter- dependent portion of the measured misregistration data for each of the sets of parameters and identifying at least one mean error portion, each of the mean error portions corresponding to each of the at least one principal components of the parameter-dependent portion of the measured misregistration data for each of the sets of measurement parameters.
  • the parameter-stable misregistration measurement amelioration method also includes using the parameter-dependent portion and the mean error portion to identify and remove a parameter-dependent portion and a mean error portion from measured misregistration data for at least one additional wafer selected from the batch wafers intended to be identical, for each of the sets of measurement parameters, thereby generating ameliorated parameter-stable ameliorated misregistration data for the at least one additional wafer.
  • the misregistration metrology tool is an imaging misregistration metrology tool.
  • the misregistration metrology tool is a scatterometry misregistration metrology tool.
  • the at least one principal component of the parameter- dependent portion of the misregistration data for each of the sets of measurement parameters is identified using principal component analysis.
  • the mean error portions are identified using a reference misregistration value.
  • the reference misregistration value is generated by using a reference misregistration metrology tool to measure the wafer.
  • the reference misregistration tool is an electron beam misregistration metrology tool.
  • the mean error portions are identified using a statistical model.
  • the statistical model is compiled from multiple misregistration measurements of the wafer.
  • the statistical model includes a modeled portion and an unmodeled portion.
  • the sets of measurement parameters comprise at least one of a focus variability in misregistration measurement, a numerical aperture used in misregistration measurement, an angle of incidence of light used in misregistration measurement and a polarization of light used in misregistration measurement.
  • a parameter-stable misregistration measurement amelioration system including a misregistration metrology tool operative to measure misregistration at multiple sites between at least a first layer and a second layer of a wafer, including a plurality of multilayered semiconductor devices formed thereon, selected from a batch of wafers intended to be identical, using a plurality of sets of measurement parameters, thereby generating measured misregistration data for each of the parameters and a misregistration data analyzer operative to identify and remove a parameter-dependent portion and a mean error portion from the measured misregistration data for the wafer for each of the sets of measurement parameters, thereby generating ameliorated parameter-stable ameliorated misregistration data for the wafer.
  • Fig. 1 is a simplified schematic illustration of a parameter-stable misregistration measurement amelioration system
  • Fig. 2 is a simplified flow chart illustrating a parameter-stable misregistration measurement amelioration method useful by the parameter-stable misregistration measurement amelioration system of Fig. 1.
  • Fig. 1 is a simplified schematic illustration of a parameter-stable misregistration measurement amelioration system (PSMMAS) 100
  • Fig.2 is a simplified flow chart illustrating a parameter-stable misregistration measurement amelioration method (PSMMAM) 200 useful by PSMMAS 100.
  • PSMMAS parameter-stable misregistration measurement amelioration system
  • PSMMAM parameter-stable misregistration measurement amelioration method
  • PSMMAS 100 includes a misregistration metrology tool 110 and a misregistration data analyzer 120.
  • Misregistration metrology tool 1 10 can be any suitable misregistration metrology tool, having the capability to measure misregistration using a plurality of sets of measurement parameters, such as an imaging misregistration metrology tool or a scatterometry misregistration metrology tool.
  • the parameters include multiple wavelengths of light used in measuring misregistration.
  • a typical imaging misregistration metrology tool forming part of PSMMAS 100 is an ArcherTM 700, commercially available from KLA Corporation, of Milpitas, CA.
  • a typical scatterometry misregistration metrology tool forming part of PSMMAS 100 is an ATL100TM, commercially available from KLA Corporation, of Milpitas, CA.
  • a wafer including a plurality of multilayered semiconductor devices formed thereon, selected from a batch of wafers intended to be identical, is provided, and misregistration metrology tool 110 measures misregistration, also referred to as overlay, at multiple sites, s, between at least a first layer and a second layer of the wafer, using multiple sets of measurement parameters, l, preferably including multiple wavelengths of light, thereby generating measured misregistration data, OVL(l,s), for each site and for each of the sets of parameters.
  • misregistration metrology tool 110 measures misregistration, also referred to as overlay, at multiple sites, s, between at least a first layer and a second layer of the wafer, using multiple sets of measurement parameters, l, preferably including multiple wavelengths of light, thereby generating measured misregistration data, OVL(l,s), for each site and for each of the sets of parameters.
  • the wafer measured at step 202 includes features having some number, n, of deformations included in each of the measured sites.
  • measured misregistration data, OVL(X,s) may include components from both a misregistration between the first and second layers OVLo(s), as well as components from each deformation eigenvector Î k (l,s), as described in equation
  • each deformation eigenvector Î k (l,s) includes terms from both a parameter-dependent portion Î k (l,s) and a mean error portion m k (s), as seen in equation 2:
  • both the parameter-dependent portion Î k (l,s) and the mean error portion m k (s) result from the same k* deformation. Therefore, both the parameter-dependent portion Î k (l,s) and the mean error portion m k (s) are proportional to an amplitude of the k th deformation, and thus the parameter- dependent portion Î k (l,s) and the mean error portion m k (s) are mathematically related to each other.
  • PSMMAM 200 proceeds to solve additional equations, as described hereinbelow with further reference to Figs. 2 A & 2B.
  • misregistration data analyzer 120 identifies a parameter-dependent portion OVL e (l,s) for each site, s, and for each parameter set, l, of measured misregistration data OVL(l,s) and a mean error portion OVL m (S) for each site s of measured misregistration data OVL(l,s) generated at step 202.
  • mean error portion OVL m (s) includes both the misregistration of the wafer OVLo(s) and a mean error portion associated with the measured misregistration data OVL(l,s).
  • misregistration data analyzer 120 uses principal component analysis (PC A) for a set of parameter-dependent portions ⁇ OVL e (l,S) ⁇ of measured misregistration data OVL(l,s) to identify a set of principal components ⁇ e k (l,s) ⁇ corresponding to the n deformations included in each of the sites, s, measured at step 202.
  • PC A principal component analysis
  • misregistration data analyzer 120 identifies a suitable weighting coefficient a k (s) for equation 1 by identifying a value of weighting coefficient otk(s) that minimizes a metric Mi, as defined in equation 4:
  • equation 4 represents the projections of ⁇ OVL e (l,S) ⁇ onto ⁇ e k (l,s) ⁇ .
  • misregistration data analyzer 120 identifies mean error portions m k corresponding to each one of the principle components Î k (l,s) identified at step 206 for each measured site, s.
  • mean error portions m k (s) are identified using equation 5:
  • PSMMAM 200 identifies mean error portions m k (s) which result in the best matching between the left-hand-side and the right-hand- side of equation 5 for all sites, s, measured at step 202.
  • reference misregistration OVL R is generated by using a reference misregistration metrology tool to measure misregistration of the wafer measured at step 202.
  • a typical reference misregistration metrology tool is an electron beam misregistration metrology tool, such as an eDR7xxxTM, commercially available from KLA Corporation of Milpitas, CA, USA.
  • Other suitable reference misregistration metrology tools include, inter alia, optical tools, SEM tools, TEM tools and AFM tools.
  • a statistical model is compiled from multiple, preferably at least 200, misregistration measurements of the wafer measured at step 202.
  • each of the misregistration measurements includes a modeled portion, corresponding to actual device misregistration, and an unmodeled portion, corresponding to deformations.
  • Mean error portions m k (s) are identified by identifying values of mean error portions m k (s) that minimize a metric M2, as defined in equation 6:
  • u(s) is the unmodeled portion of the mean error portion of the misregistration of each site included in the statistical model and ak
  • misregistration data analyzer 120 removes the parameter-dependent portion Î k (l,s) and the mean error portion m k (s) from the measured misregistration data OVL(l,s) generated at step 202 for the wafer for each of the parameters used in misregistration measurements, thereby generating ameliorated parameter-stable ameliorated misregistration data OVLo(s) for the wafer.
  • parameter-stable ameliorated misregistration data OVLo(s) is used to adjust at least one tool used in the fabrication of the batch of wafers intended to be identical from which the wafer measured in step 202 was selected.
  • step 214 at least one additional wafer, including a plurality of multilayered semiconductor devices, selected from the batch of wafers intended to be identical from which a wafer was provided at step 202, is provided.
  • misregistration metrology tool 110 measures misregistration at multiple sites between at least a first layer and a second layer of the wafer, using a plurality of sets of measurement parameters sets, thereby generating measured misregistration data for each of the parameter sets.
  • the parameter sets include multiple wavelengths of light.
  • misregistration data analyzer 120 uses parameter-dependent portion OVLe(l,s) for the at least one additional measured at step 214 to define the weighting coefficients a k (s) for the at least one additional wafer. Once weighting coefficients a k (s) for the at least one additional wafer are known, misregistration data analyzer 120 uses the one or more deformation eigenvectors k (l,s) identified at step 210 to identify and remove the parameter-dependent portion Î k (l,s) and the mean error portion m k (s) from the measured misregistration data OVL(l,s) generated at step 214 for the at least one additional wafer for each of the parameter sets, thereby generating ameliorated parameter-stable ameliorated misregistration data OVLo(s) for the one or more additional wafers.
  • the one or more deformation eigenvectors k (l,s) identified at step 210 include a parameter-dependent portion Î k (l,s), and a mean error portion m k (s), as described hereinabove with reference to Eq. 2.
  • the sets of measurement parameters used by misregistration metrology tool 110 include at least one of a focus variability in misregistration measurement, a numerical aperture used in misregistration measurement, an angle of incidence of light used in misregistration measurement and a polarization of light used in misregistration measurement.
  • variations in misregistration measurement data as a function of the varied at least one misregistration measurement parameter are preferably analyzed in a similar manner to the analysis described hereinabove with reference to Fig. 2, thereby generating ameliorated parameter-stable ameliorated misregistration data.

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Vision & Pattern Recognition (AREA)
  • Signal Processing (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Manufacturing & Machinery (AREA)
  • Length Measuring Devices By Optical Means (AREA)

Abstract

A parameter-stable misregistration measurement amelioration system and method including providing a wafer, including a plurality of multilayered semiconductor devices formed thereon, selected from a batch wafers intended to be identical, using a misregistration metrology tool to measure misregistration at multiple sites between at least a first layer and a second layer of the wafer, using a plurality of sets of measurement parameters, thereby generating measured misregistration data for each of the sets of measurement parameters, identifying and removing a parameter-dependent portion and a mean error portion from the measured misregistration data for the wafer for each of the sets of measurement parameters, thereby generating ameliorated parameter-stable ameliorated misregistration data for the wafer.

Description

PARAMETER-STABLE MISREGISTRATION MEASUREMENT AMELIORATION
IN SEMICONDUCTOR DEVICES
REFERENCE TO RELATED APPLICATIONS
[0001] Reference is hereby made to U.S. Provisional Patent Application Serial No. 62/821,596, filed March 21, 2019 and entitled DYNAMIC ACCURACY OPTIMIZATION BASED ON OVERLAY ERROR VARIATION WITH MEASUREMENT CONDITIONS, the disclosure of which is hereby incorporated by reference and priority of which is hereby claimed.
FIELD OF THE INVENTION
[0002] The present invention relates measurement of misregistration in the manufacture of semiconductor devices generally.
BACKGROUND OF THE INVENTION
[0003] Various methods and systems are known for measurement of misregistration in the manufacture of semiconductor devices.
SUMMARY OF THE INVENTION
[0004] The present invention seeks to provide an improved methods and systems for measurement of misregistration in the manufacture of semiconductor devices.
[0005] There is thus provided in accordance with a preferred embodiment of the present invention a parameter-stable misregistration measurement amelioration method including providing a wafer, including a plurality of multilayered semiconductor devices formed thereon, selected from a batch wafers intended to be identical, using a misregistration metrology tool to measure misregistration at multiple sites between at least a first layer and a second layer of the wafer, using a plurality of sets of measurement parameters, thereby generating measured misregistration data for each of the sets of measurement parameters, identifying and removing a parameter-dependent portion and a mean error portion from the measured misregistration data for the wafer for each of the sets of measurement parameters, thereby generating ameliorated parameter-stable ameliorated misregistration data for the wafer.
[0006] In accordance with a preferred embodiment of the present invention, the sets of measurement parameters comprise at least multiple wavelengths of light used in misregistration measurement.
[0007] Preferably, the identifying the parameter-dependent portion and the mean error portion includes identifying a parameter-dependent portion for the measured misregistration data for each of the sets of measurement parameters, identifying at least one principal component of the parameter-dependent portion of the misregistration data for each of the sets of measurement parameters, identifying a weighting coefficient for the at least one principal component of the parameter- dependent portion of the measured misregistration data for each of the sets of parameters and identifying at least one mean error portion, each of the mean error portions corresponding to each of the at least one principal components of the parameter-dependent portion of the measured misregistration data for each of the sets of measurement parameters.
[0008] In accordance with a preferred embodiment of the present invention the parameter-stable misregistration measurement amelioration method also includes using the parameter-dependent portion and the mean error portion to identify and remove a parameter-dependent portion and a mean error portion from measured misregistration data for at least one additional wafer selected from the batch wafers intended to be identical, for each of the sets of measurement parameters, thereby generating ameliorated parameter-stable ameliorated misregistration data for the at least one additional wafer. [0009] In accordance with a preferred embodiment of the present invention, the misregistration metrology tool is an imaging misregistration metrology tool. Alternatively, in accordance with a preferred embodiment of the present invention, the misregistration metrology tool is a scatterometry misregistration metrology tool.
[0010] Preferably, the at least one principal component of the parameter- dependent portion of the misregistration data for each of the sets of measurement parameters is identified using principal component analysis.
[0011] In accordance with a preferred embodiment of the present invention, the mean error portions are identified using a reference misregistration value. Preferably, the reference misregistration value is generated by using a reference misregistration metrology tool to measure the wafer. Preferably, the reference misregistration tool is an electron beam misregistration metrology tool.
[0012] Alternatively, in accordance with a preferred embodiment of the present invention, the mean error portions are identified using a statistical model. Preferably, the statistical model is compiled from multiple misregistration measurements of the wafer. Preferably, the statistical model includes a modeled portion and an unmodeled portion.
[0013] In accordance with a preferred embodiment of the present invention, the sets of measurement parameters comprise at least one of a focus variability in misregistration measurement, a numerical aperture used in misregistration measurement, an angle of incidence of light used in misregistration measurement and a polarization of light used in misregistration measurement.
[0014] There is also provided in accordance with another preferred embodiment of the present invention a parameter-stable misregistration measurement amelioration system including a misregistration metrology tool operative to measure misregistration at multiple sites between at least a first layer and a second layer of a wafer, including a plurality of multilayered semiconductor devices formed thereon, selected from a batch of wafers intended to be identical, using a plurality of sets of measurement parameters, thereby generating measured misregistration data for each of the parameters and a misregistration data analyzer operative to identify and remove a parameter-dependent portion and a mean error portion from the measured misregistration data for the wafer for each of the sets of measurement parameters, thereby generating ameliorated parameter-stable ameliorated misregistration data for the wafer.
BRIEF DESCRIPTION OF THE DRAWINGS
[0015] The present invention will be understood and appreciated more fully from the following detailed description, taken in conjunction with the drawings in which:
Fig. 1 is a simplified schematic illustration of a parameter-stable misregistration measurement amelioration system; and
Fig. 2 is a simplified flow chart illustrating a parameter-stable misregistration measurement amelioration method useful by the parameter-stable misregistration measurement amelioration system of Fig. 1.
DETAILED DESCRIPTION OF PREFERRED EMBODIMENTS
[0016] It is appreciated that the system and method described hereinbelow with reference to Figs. 1 & 2 form part of a manufacturing process for semiconductor devices, and the misregistration measured by the system and method described hereinbelow with reference to Figs. 1 & 2 is used to adjust fabrication processes of the semiconductor devices to more closely align various layers of the semiconductor devices being fabricated.
[0017] Reference is now made to Fig. 1, which is a simplified schematic illustration of a parameter-stable misregistration measurement amelioration system (PSMMAS) 100, and to Fig.2, which is a simplified flow chart illustrating a parameter-stable misregistration measurement amelioration method (PSMMAM) 200 useful by PSMMAS 100.
[0018] As seen in Fig. 1, PSMMAS 100 includes a misregistration metrology tool 110 and a misregistration data analyzer 120. Misregistration metrology tool 1 10 can be any suitable misregistration metrology tool, having the capability to measure misregistration using a plurality of sets of measurement parameters, such as an imaging misregistration metrology tool or a scatterometry misregistration metrology tool. Preferably, the parameters include multiple wavelengths of light used in measuring misregistration. A typical imaging misregistration metrology tool forming part of PSMMAS 100 is an Archer™ 700, commercially available from KLA Corporation, of Milpitas, CA. A typical scatterometry misregistration metrology tool forming part of PSMMAS 100 is an ATL100™, commercially available from KLA Corporation, of Milpitas, CA.
[0019] As seen in Fig. 2, at a first step 202, a wafer, including a plurality of multilayered semiconductor devices formed thereon, selected from a batch of wafers intended to be identical, is provided, and misregistration metrology tool 110 measures misregistration, also referred to as overlay, at multiple sites, s, between at least a first layer and a second layer of the wafer, using multiple sets of measurement parameters, l, preferably including multiple wavelengths of light, thereby generating measured misregistration data, OVL(l,s), for each site and for each of the sets of parameters. It is appreciated that each of the wafers in the batch of wafers intended to be identical undergo the same fabrication steps and include semiconductor devices intended to be identical to corresponding semiconductor devices on all other wafers in the batch of wafers intended to be identical.
[0020] Typically, the wafer measured at step 202 includes features having some number, n, of deformations included in each of the measured sites. Thus, measured misregistration data, OVL(X,s), may include components from both a misregistration between the first and second layers OVLo(s), as well as components from each deformation eigenvector Îk(l,s), as described in equation
1
Figure imgf000008_0001
where k is an index indicating a deformation and ak(s) is a weighting coefficient for each deformation eigenvector Îk(l,s). It is noted that unlike the misregistration of the wafer OVLo(s), the terms from each deformation eigenvector Îk(l,s) are dependent on a parameter, such as wavelength of light, used in the misregistration measurement. It is further noted that each deformation eigenvector Îk(l,s) includes terms from both a parameter-dependent portion Îk(l,s) and a mean error portion mk(s), as seen in equation 2:
Îk(l,s) = Îk(l,s) + mk(s) (Eq. 2)
[0021] It is noted that both the parameter-dependent portion Îk(l,s) and the mean error portion mk(s) result from the same k* deformation. Therefore, both the parameter-dependent portion Îk(l,s) and the mean error portion mk(s) are proportional to an amplitude of the kth deformation, and thus the parameter- dependent portion Îk(l,s) and the mean error portion mk(s) are mathematically related to each other.
[0022] In order to solve equations 1 and 2, and thus identify misregistration between the first and second layers, OVLo(s), PSMMAM 200 proceeds to solve additional equations, as described hereinbelow with further reference to Figs. 2 A & 2B.
[0023] At a next step 204, as seen in equation 3, misregistration data analyzer 120 identifies a parameter-dependent portion OVLe(l,s) for each site, s, and for each parameter set, l, of measured misregistration data OVL(l,s) and a mean error portion OVLm(S) for each site s of measured misregistration data OVL(l,s) generated at step 202.
OVL(l, s) = OVLe(l, s ) + OVLm(s) (Eq. 3) [0024] It is noted that in equation 3, mean error portion OVLm(s) includes both the misregistration of the wafer OVLo(s) and a mean error portion associated with the measured misregistration data OVL(l,s).
[0025] At a next step 206, misregistration data analyzer 120 uses principal component analysis (PC A) for a set of parameter-dependent portions {OVLe(l,S) } of measured misregistration data OVL(l,s) to identify a set of principal components {ek(l,s)} corresponding to the n deformations included in each of the sites, s, measured at step 202.
[0026] At a next step 208, misregistration data analyzer 120 identifies a suitable weighting coefficient ak(s) for equation 1 by identifying a value of weighting coefficient otk(s) that minimizes a metric Mi, as defined in equation 4:
Figure imgf000009_0001
[0027] It is noted that for an orthonormal set of principal components {ek(l,s)}, equation 4 represents the projections of {OVLe(l,S)} onto {ek(l,s)} .
[0028] At a next step 210, misregistration data analyzer 120 identifies mean error portions mk corresponding to each one of the principle components Îk(l,s) identified at step 206 for each measured site, s. In a preferred embodiment of the present invention, mean error portions mk(s) are identified using equation 5:
Figure imgf000009_0002
where OVLR(S) is a reference misregistration value for each site of the wafer measured at step 202, and PSMMAM 200 identifies mean error portions mk(s) which result in the best matching between the left-hand-side and the right-hand- side of equation 5 for all sites, s, measured at step 202.
[0029] Preferably, reference misregistration OVLR(S) is generated by using a reference misregistration metrology tool to measure misregistration of the wafer measured at step 202. A typical reference misregistration metrology tool is an electron beam misregistration metrology tool, such as an eDR7xxx™, commercially available from KLA Corporation of Milpitas, CA, USA. Other suitable reference misregistration metrology tools include, inter alia, optical tools, SEM tools, TEM tools and AFM tools.
[0030] In an alternative embodiment of the present invention, a statistical model is compiled from multiple, preferably at least 200, misregistration measurements of the wafer measured at step 202. Typically, each of the misregistration measurements includes a modeled portion, corresponding to actual device misregistration, and an unmodeled portion, corresponding to deformations. Mean error portions mk(s) are identified by identifying values of mean error portions mk(s) that minimize a metric M2, as defined in equation 6:
Figure imgf000010_0001
where OVLm|u(s) is the unmodeled portion of the mean error portion of the misregistration of each site included in the statistical model and ak|u(s) is the unmodeled portion of the weighting coefficients ak(s).
[0031] At a next step 212, misregistration data analyzer 120 removes the parameter-dependent portion Îk(l,s) and the mean error portion mk(s) from the measured misregistration data OVL(l,s) generated at step 202 for the wafer for each of the parameters used in misregistration measurements, thereby generating ameliorated parameter-stable ameliorated misregistration data OVLo(s) for the wafer.
[0032] In a preferred embodiment of the present invention, parameter-stable ameliorated misregistration data OVLo(s) is used to adjust at least one tool used in the fabrication of the batch of wafers intended to be identical from which the wafer measured in step 202 was selected.
[0033] Preferably, at a next step 214, at least one additional wafer, including a plurality of multilayered semiconductor devices, selected from the batch of wafers intended to be identical from which a wafer was provided at step 202, is provided. As part of step 214, misregistration metrology tool 110 measures misregistration at multiple sites between at least a first layer and a second layer of the wafer, using a plurality of sets of measurement parameters sets, thereby generating measured misregistration data for each of the parameter sets. Preferably, the parameter sets include multiple wavelengths of light.
[0034] Then, misregistration data analyzer 120 uses parameter-dependent portion OVLe(l,s) for the at least one additional measured at step 214 to define the weighting coefficients ak(s) for the at least one additional wafer. Once weighting coefficients ak(s) for the at least one additional wafer are known, misregistration data analyzer 120 uses the one or more deformation eigenvectors k(l,s) identified at step 210 to identify and remove the parameter-dependent portion Îk(l,s) and the mean error portion mk(s) from the measured misregistration data OVL(l,s) generated at step 214 for the at least one additional wafer for each of the parameter sets, thereby generating ameliorated parameter-stable ameliorated misregistration data OVLo(s) for the one or more additional wafers. It is appreciated that the one or more deformation eigenvectors k(l,s) identified at step 210 include a parameter-dependent portion Îk(l,s), and a mean error portion mk(s), as described hereinabove with reference to Eq. 2.
[0035] In an alternative embodiment of the present invention, at step 202, the sets of measurement parameters used by misregistration metrology tool 110 include at least one of a focus variability in misregistration measurement, a numerical aperture used in misregistration measurement, an angle of incidence of light used in misregistration measurement and a polarization of light used in misregistration measurement. In such an embodiment, variations in misregistration measurement data as a function of the varied at least one misregistration measurement parameter are preferably analyzed in a similar manner to the analysis described hereinabove with reference to Fig. 2, thereby generating ameliorated parameter-stable ameliorated misregistration data.
[0036] It will be appreciated by persons skilled in the art that the present invention is not limited to what has been particularly shown and described hereinabove. The scope of the present invention includes both combinations and subcombinations of various features described hereinabove as well as modifications thereof, all of which are not in the prior art.

Claims

1. A parameter-stable misregistration measurement amelioration method comprising:
providing a wafer, comprising a plurality of multilayered semiconductor devices formed thereon, selected from a batch wafers intended to be identical;
using a misregistration metrology tool to measure misregistration at multiple sites between at least a first layer and a second layer of said wafer, using a plurality of sets of measurement parameters, thereby generating measured misregistration data for each of said sets of measurement parameters;
identifying and removing a parameter-dependent portion and a mean error portion from said measured misregistration data for said wafer for each of said sets of measurement parameters, thereby generating ameliorated parameter-stable ameliorated misregistration data for said wafer.
2. The parameter-stable misregistration measurement amelioration method according to claim 1 and wherein said sets of measurement parameters comprise at least multiple wavelengths of light used in misregistration measurement.
3. The parameter-stable misregistration measurement amelioration method according to claim 1 or claim 2 and wherein said identifying said parameter- dependent portion and said mean error portion comprises:
identifying a parameter-dependent portion for said measured misregistration data for each of said sets of measurement parameters; identifying at least one principal component of said parameter-dependent portion of said misregistration data for each of said sets of measurement parameters;
identifying a weighting coefficient for said at least one principal component of said parameter-dependent portion of said measured misregistration data for each of said sets of parameters; and identifying at least one mean error portion, each of said mean error portions corresponding to each of said at least one principal components of said parameter-dependent portion of said measured misregistration data for each of said sets of measurement parameters.
4. The parameter-stable misregistration measurement amelioration method according to any of claims 1 - 3 and also comprising using said parameter- dependent portion and said mean error portion to identify and remove a parameter- dependent portion and a mean error portion from measured misregistration data for at least one additional wafer selected from said batch wafers intended to be identical, for each of said sets of measurement parameters, thereby generating ameliorated parameter-stable ameliorated misregistration data for said at least one additional wafer.
5. The parameter-stable misregistration measurement amelioration method according to any of claims 1 - 4 and wherein said misregistration metrology tool is an imaging misregistration metrology tool.
6. The parameter-stable misregistration measurement amelioration method according to any of claims 1 - 4 and wherein said misregistration metrology tool is a scatterometry misregistration metrology tool.
7. The parameter-stable misregistration measurement amelioration method according to any of claims 1 -6 and wherein said at least one principal component of said parameter-dependent portion of said misregistration data for each of said sets of measurement parameters is identified using principal component analysis.
8. The parameter-stable misregistration measurement amelioration method according to any of claims 1 - 7 and wherein said mean error portions are identified using a reference misregistration value.
9. The parameter-stable misregistration measurement amelioration method according to claim 8 and wherein said reference misregistration value is generated by using a reference misregistration metrology tool to measure said wafer.
10. The parameter-stable misregistration measurement amelioration method according to claim 9 and wherein said reference misregistration tool is an electron beam misregistration metrology tool.
11. The parameter-stable misregistration measurement amelioration method according to any of claims 1 - 7 and wherein said mean error portions are identified using a statistical model.
12. The parameter-stable misregistration measurement amelioration method according to claim 11 and wherein said statistical model is compiled from multiple misregistration measurements of said wafer.
13. The parameter-stable misregistration measurement amelioration method according to claim 11 or claim 12 and wherein said statistical model comprises a modeled portion and an unmodeled portion.
14. The parameter-stable misregistration measurement amelioration method according to any of claims 1 - 13 and wherein said sets of measurement parameters comprise at least one of:
a focus variability in misregistration measurement;
a numerical aperture used in misregistration measurement;
an angle of incidence of light used in misregistration measurement; and a polarization of light used in misregistration measurement.
15. A parameter-stable misregistration measurement amelioration system comprising:
a misregistration metrology tool operative to measure misregistration at multiple sites between at least a first layer and a second layer of a wafer, comprising a plurality of multilayered semiconductor devices formed thereon, selected from a batch of wafers intended to be identical, using a plurality of sets of measurement parameters, thereby generating measured misregistration data for each of said parameters; and
a misregistration data analyzer operative to:
identify and remove a parameter-dependent portion and a mean error portion from said measured misregistration data for said wafer for each of said sets of measurement parameters, thereby generating ameliorated parameter-stable ameliorated misregistration data for said wafer.
16. The parameter-stable misregistration measurement amelioration system according to claim 15 and wherein said sets of measurement parameters comprise at least multiple wavelengths of light used in misregistration measurement.
17. The parameter-stable misregistration measurement amelioration system according to claim 15 or claim 16 and wherein said misregistration data analyzer is further operative to:
identify a parameter-dependent portion for said measured misregistration data for each of said sets of measurement parameters;
identify at least one principal component of said parameter-dependent portion of said misregistration data for each of said sets of measurement parameters;
identify a weighting coefficient for said at least one principal component of said parameter-dependent portion for said measured misregistration data for each of said sets of measurement parameters; and
identify at least one mean error portion, each of said at least one mean error portion corresponding to each of said at least one principal components of said parameter-dependent portion of said measured misregistration data for each of said sets of measurement parameters.
18. The parameter-stable misregistration measurement amelioration system according to any of claims 15 - 17 and wherein said analyzer is further operative to use said parameter-dependent portion and said mean error portion to identify and remove said parameter-dependent portion and a mean error portion from said measured misregistration data for at least one additional wafer selected from said batch of wafers intended to be identical, for each of said sets of measurement parameters, thereby generating ameliorated parameter-stable ameliorated misregistration data for said at least one additional wafer.
19. The parameter-stable misregistration measurement amelioration system according to any of claims 15 - 18 and wherein said misregistration metrology tool is an imaging misregistration metrology tool.
20. The parameter-stable misregistration measurement amelioration system according to any of claims 15 - 18 and wherein said misregistration metrology tool is a scatterometry misregistration metrology tool.
21. The parameter-stable misregistration measurement amelioration system according to any of claims 15 -20 and wherein said at least one principal component of said parameter-dependent portion of said misregistration data for each of said sets of measurement parameters is identified using principal component analysis.
22. The parameter-stable misregistration measurement amelioration system according to any of claims 15 - 21 and wherein said mean error portions are identified using a reference misregistration value.
23. The parameter-stable misregistration measurement amelioration system according to claim 22 and wherein said reference misregistration value is generated by using a reference misregistration metrology tool to measure said wafer.
24. The parameter-stable misregistration measurement amelioration system according to claim 23 and wherein said reference misregistration tool is an electron beam misregistration metrology tool.
25. The parameter-stable misregistration measurement amelioration system according to any of claims 15 - 21 and wherein said mean error portions are identified using a statistical model.
26. The parameter-stable misregistration measurement amelioration system according to claim 25 and wherein said statistical model is compiled from multiple misregistration measurements of said wafer.
27. The parameter-stable misregistration measurement amelioration system according to claim 25 or claim 26 and wherein said statistical model comprises a modeled portion and an unmodeled portion.
28. The parameter-stable misregistration measurement amelioration system according to any of claims 15 - 27 and wherein said sets of measurement parameters comprise at least one of:
a focus variability in misregistration measurement;
a numerical aperture used in misregistration measurement;
an angle of incidence of light used in misregistration measurement; and a polarization of light used in misregistration measurement.
PCT/US2019/047797 2019-03-21 2019-08-23 Parameter-stable misregistration measurement amelioration in semiconductor devices Ceased WO2020190318A1 (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
KR1020217033551A KR102509764B1 (en) 2019-03-21 2019-08-23 Improving Parametric-Stable Misalignment Measurements in Semiconductor Devices
CN201980093578.7A CN113574643B (en) 2019-03-21 2019-08-23 Improved parametrically stable misalignment measurements in semiconductor devices
JP2021556496A JP7177949B2 (en) 2019-03-21 2019-08-23 Improvement of parameter stability misalignment measurement in semiconductor devices
US16/496,918 US11101153B2 (en) 2019-03-21 2019-08-23 Parameter-stable misregistration measurement amelioration in semiconductor devices
TW109108584A TWI845639B (en) 2019-03-21 2020-03-16 Parameter-stable misregistration measurement amelioration in semiconductor devices

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201962821596P 2019-03-21 2019-03-21
US62/821,596 2019-03-21

Publications (1)

Publication Number Publication Date
WO2020190318A1 true WO2020190318A1 (en) 2020-09-24

Family

ID=72521076

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2019/047797 Ceased WO2020190318A1 (en) 2019-03-21 2019-08-23 Parameter-stable misregistration measurement amelioration in semiconductor devices

Country Status (6)

Country Link
US (1) US11101153B2 (en)
JP (1) JP7177949B2 (en)
KR (1) KR102509764B1 (en)
CN (1) CN113574643B (en)
TW (1) TWI845639B (en)
WO (1) WO2020190318A1 (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115380367B (en) 2020-04-05 2025-05-13 科磊股份有限公司 System and method for correcting the effects of wafer tilt on offset measurements
US12165930B2 (en) * 2021-06-03 2024-12-10 Kla Corporation Adaptive modeling misregistration measurement system and method
US12002765B2 (en) 2022-01-04 2024-06-04 Nanya Technology Corporation Marks for overlay measurement and overlay error correction
TWI803262B (en) * 2022-01-04 2023-05-21 南亞科技股份有限公司 Overlay measurement marks and overlay error correction marks
US11796924B2 (en) 2022-01-04 2023-10-24 Nanya Technology Corporation Method for overlay error correction and method for manufacturing a semiconductor device structure with overlay marks
US12487533B2 (en) 2024-01-25 2025-12-02 Kla Corporation Amplitude asymmetry measurements in overlay metrology

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7102749B2 (en) * 2000-06-22 2006-09-05 Kla-Tencor Overlay alignment mark design
US20090063378A1 (en) * 2007-08-31 2009-03-05 Kla-Tencor Technologies Corporation Apparatus and methods for predicting a semiconductor parameter across an area of a wafer
US20130096876A1 (en) * 2007-07-11 2013-04-18 Nova Measuring Instruments Ltd. Method and system for use in monitoring properties of patterned structures
KR101281301B1 (en) * 2009-01-08 2013-07-03 케이엘에이-텐코 코포레이션 Scatterometry metrology target design optimization
KR101749440B1 (en) * 2013-02-20 2017-06-20 가부시키가이샤 히다치 하이테크놀로지즈 Pattern-measuring apparatus and semiconductor-measuring system

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6064486A (en) * 1998-05-21 2000-05-16 Leland Stanford Junior University Systems, methods and computer program products for detecting the position of a new alignment mark on a substrate based on fitting to sample alignment signals
US6281027B1 (en) * 1999-09-15 2001-08-28 Therma-Wave Inc Spatial averaging technique for ellipsometry and reflectometry
TW569368B (en) 2001-11-14 2004-01-01 Tokyo Electron Ltd Substrate inspecting apparatus, coating and developing apparatus, and substrate inspecting method
JP4677231B2 (en) 2002-06-05 2011-04-27 ケーエルエー−テンカー コーポレイション Using overlay diagnostics for improved automated process control.
JP4072465B2 (en) * 2003-06-19 2008-04-09 キヤノン株式会社 Position detection method
WO2005098686A2 (en) * 2004-04-02 2005-10-20 Clear Shape Technologies, Inc. Modeling resolution enhancement processes in integrated circuit fabrication
US20070099097A1 (en) * 2005-11-03 2007-05-03 Samsung Electronics Co., Ltd. Multi-purpose measurement marks for semiconductor devices, and methods, systems and computer program products for using same
CN101063661B (en) * 2006-04-29 2010-05-12 中芯国际集成电路制造(上海)有限公司 Method for monitoring silicon monocrystal extension layer fault situation using micro-image region iterated logarithm measuring apparatus
US10296554B2 (en) * 2013-03-01 2019-05-21 Nanometrics Incorporated Correction of angular error of plane-of-incidence azimuth of optical metrology device
CN103398666B (en) * 2013-05-27 2015-12-23 电子科技大学 A kind of dislocation of the interlayer for double-deck periodic micro structure method of testing
US9383661B2 (en) * 2013-08-10 2016-07-05 Kla-Tencor Corporation Methods and apparatus for determining focus
WO2015031337A1 (en) * 2013-08-27 2015-03-05 Kla-Tencor Corporation Removing process-variation-related inaccuracies from scatterometry measurements
US10152654B2 (en) * 2014-02-20 2018-12-11 Kla-Tencor Corporation Signal response metrology for image based overlay measurements
TWI752764B (en) * 2015-05-19 2022-01-11 美商克萊譚克公司 Topographic phase control for overlay measurement
US10504759B2 (en) * 2016-04-04 2019-12-10 Kla-Tencor Corporation Semiconductor metrology with information from multiple processing steps

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7102749B2 (en) * 2000-06-22 2006-09-05 Kla-Tencor Overlay alignment mark design
US20130096876A1 (en) * 2007-07-11 2013-04-18 Nova Measuring Instruments Ltd. Method and system for use in monitoring properties of patterned structures
US20090063378A1 (en) * 2007-08-31 2009-03-05 Kla-Tencor Technologies Corporation Apparatus and methods for predicting a semiconductor parameter across an area of a wafer
KR101281301B1 (en) * 2009-01-08 2013-07-03 케이엘에이-텐코 코포레이션 Scatterometry metrology target design optimization
KR101749440B1 (en) * 2013-02-20 2017-06-20 가부시키가이샤 히다치 하이테크놀로지즈 Pattern-measuring apparatus and semiconductor-measuring system

Also Published As

Publication number Publication date
CN113574643A (en) 2021-10-29
JP7177949B2 (en) 2022-11-24
KR102509764B1 (en) 2023-03-14
JP2022526748A (en) 2022-05-26
TW202043750A (en) 2020-12-01
TWI845639B (en) 2024-06-21
US20210020480A1 (en) 2021-01-21
CN113574643B (en) 2024-12-03
US11101153B2 (en) 2021-08-24
KR20210134045A (en) 2021-11-08

Similar Documents

Publication Publication Date Title
US11101153B2 (en) Parameter-stable misregistration measurement amelioration in semiconductor devices
CN105612601B (en) Method and apparatus for patterned wafer characterization
JP5162778B2 (en) Determination of structural profile parameters using a dispersion function relating process parameters to dispersion.
TWI755386B (en) Metrology systems and methods
JP4302965B2 (en) Semiconductor device manufacturing method and manufacturing system thereof
KR102254033B1 (en) Optical measuring methods and system
JP2009529785A (en) Lithographic misalignment determination method based on substrate curvature and stress mapping data
US11862521B2 (en) Multiple-tool parameter set calibration and misregistration measurement system and method
JP2022526748A5 (en)
KR102689275B1 (en) Device manufacturing methods
WO2020106784A1 (en) Process optimization using design of experiments and response surface models
WO2020263461A1 (en) Selection of regions of interest for measurement of misregistration and amelioration thereof
US11551980B2 (en) Dynamic amelioration of misregistration measurement
TW202144926A (en) Multi-step process inspection method
US12504696B2 (en) Method for monitoring process variation index
KR102735952B1 (en) Dynamic improvement of misregistration measurement
US12080610B2 (en) Wavelet system and method for ameliorating misregistration and asymmetry of semiconductor devices
US12222199B2 (en) Systems and methods for measurement of misregistration and amelioration thereof
JP7715933B2 (en) Imaging system and imaging method

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 19919659

Country of ref document: EP

Kind code of ref document: A1

ENP Entry into the national phase

Ref document number: 2021556496

Country of ref document: JP

Kind code of ref document: A

NENP Non-entry into the national phase

Ref country code: DE

ENP Entry into the national phase

Ref document number: 20217033551

Country of ref document: KR

Kind code of ref document: A

122 Ep: pct application non-entry in european phase

Ref document number: 19919659

Country of ref document: EP

Kind code of ref document: A1