WO2020158793A1

WO2020158793A1 - Resonator, filter and communication device

Info

Publication number: WO2020158793A1
Application number: PCT/JP2020/003152
Authority: WO
Inventors: 吉川　博道; 浩児濱田
Original assignee: 京セラ株式会社
Priority date: 2019-01-29
Filing date: 2020-01-29
Publication date: 2020-08-06
Also published as: JPWO2020158793A1

Abstract

A resonator according to the invention is provided with: a shield casing which has a cavity therein and includes a first conductor portion positioned on a −Z direction side and a second conductor portion positioned on a +Z direction side; a first resonance element which consists of a cylindrical dielectric and a +Z direction end of which is joined to the second conductor portion and a −Z direction end of which is located within the cavity in such a manner that the −Z direction end is so positioned as to be spaced from the first conductor portion; a second resonance element a −Z direction end of which is joined to the first conductor portion and a +Z direction end of which is spaced from the second conductor potion and located within the cavity in such a manner that this +Z direction end is surrounded by the first resonance element; and a third resonance element a +Z direction end of which is joined to the second conductor portion and a −Z direction end of which is spaced from the first conductor portion and located within the cavity in such a manner that this −Z direction end is surrounded by the second resonance element.

Description

Resonator, filter and communication device

The present disclosure relates to a resonator, a filter using the resonator, and a communication device.

An example of conventional technology is described in

Patent Documents

1 and 2.

JP, 2011-35792, A Japanese Utility Model Publication No. 63-159904

The resonator of the present disclosure is a shield housing having a cavity inside, and is located on a first conductor portion located on the first direction side and on a second direction side opposite to the first direction. A shield housing including a second conductor portion;
A first resonant element made of a tubular dielectric, wherein an end in the second direction is joined to the second conductor portion, and an end in the first direction is located apart from the first conductor portion. A first resonant element disposed in the cavity as described above,
A cylindrical second resonance element, wherein an end in the first direction is joined to the first conductor portion, an end in the second direction is separated from the second conductor portion, and the first resonance element is provided. A second resonant element disposed in the cavity so as to be surrounded by
A cylindrical third resonance element, wherein an end in the second direction is joined to the second conductor portion, an end in the first direction is separated from the first conductor portion, and the second resonance element is provided. And a third resonance element disposed in the cavity so as to be surrounded by.

The filter of the present disclosure is a resonator, and a plurality of resonators arranged in a row so as to be electromagnetically coupled to each other,
A first terminal portion electrically or electromagnetically connected to the resonator located at one end of the row;
A second terminal portion electrically or electromagnetically connected to the resonator located at the other end of the row.

The communication device of the present disclosure has a configuration including an antenna, a communication circuit, and the above-mentioned filter connected to the antenna and the communication circuit.

Objects, features, and advantages of the present disclosure will be more apparent from the following detailed description and drawings.

FIG. 3 is a cross-sectional view schematically showing the resonator of the first embodiment of the present disclosure. FIG. 2 is a cross-sectional view of the resonator shown in FIG. 1 taken along section line II-II. It is a graph which shows the relationship between the 3rd space|interval (DELTA)L3 between a 2nd resonance element and a 3rd resonance element, and resonance frequency. It is a graph which shows the 3rd space|interval (DELTA)L3 between a 2nd resonance element and a 3rd resonance element, and the relationship of Q value. It is a graph which shows the relationship between the length of a 3rd resonance element, and resonance frequency. It is a graph which shows the relationship between resonance frequency and Q value. It is a graph which shows the relationship between resonance frequency and Q value. FIG. 5 is a cross-sectional view schematically showing a resonator according to a second embodiment of the present disclosure. FIG. 6 is a cross-sectional view schematically showing a resonator according to a third embodiment of the present disclosure.

It is sectional drawing which shows typically the resonator of 4th Embodiment of this indication. It is sectional drawing which shows the resonator of 5th Embodiment of this indication typically. It is sectional drawing which shows the resonator of 6th Embodiment of this indication typically. It is sectional drawing which shows the resonator of 7th Embodiment of this indication typically. It is sectional drawing which shows the resonator of 8th Embodiment of this indication typically. It is sectional drawing which shows the resonator of 9th Embodiment of this indication typically. It is sectional drawing which shows the resonator of 10th Embodiment of this indication typically. It is sectional drawing which shows the filter of embodiment of this indication typically. It is a perspective view of the filter shown in FIG. FIG. 19 is a block diagram showing a communication device in which the filters shown in FIGS. 17 and 18 are incorporated.

First, as a resonator based on the resonator of the present disclosure, a resonator in which a columnar conductor whose one end is grounded is housed in a shield case is known. Further, a resonator in which a columnar dielectric is housed in a shield case is known.

Hereinafter, a resonator, a filter, and a communication device according to embodiments of the present disclosure will be described in detail with reference to the drawings.

<First Embodiment>
1 is a cross-sectional view schematically showing the resonator according to the first embodiment of the present disclosure, and FIG. 2 is a cross-sectional view taken along the section line II-II in FIG. In the following description, assuming a three-axis coordinate system of X-axis, Y-axis, and Z-axis orthogonal to each other, the right side of FIG. 1 is +X direction, the left side of FIG. 1 is −X direction, and the plane of FIG. The depth direction perpendicular to the plane is the +Y direction, the front side perpendicular to the paper surface of FIG. 1 is the −Y direction, the upper side of FIG. 1 is the +Z direction, and the lower side of FIG.

The resonator according to the present embodiment includes the first conductor portion 5 located on the −Z direction side, which is the first direction, and the second conductor located on the +Z direction side, which is the second direction opposite to the −Z direction. The shield housing 1 including the portion 6 and having the cavity 7 therein, the end in the +Z direction is joined to the second conductor portion 6, and the end in the −Z direction is located away from the first conductor portion 5. The first resonant element 2 made of a cylindrical dielectric material disposed in the cavity 7 is joined to the first conductor portion 5 at the −Z direction end, and the second conductor portion 6 is connected at the +Z direction end. And a cylindrical second resonance element 3 which is disposed in the cavity 7 so as to be separated from the first resonance element 2 and is surrounded by the first resonance element 2, and an end in the +Z direction is joined to the second conductor portion 6, And a cylindrical third resonance element 4 disposed in the cavity 7 so as to be separated from the first conductor portion 5 and surrounded by the second resonance element 3.

The second resonant element 3 is made of a cylindrical conductor. The third resonance element 4 is made of a cylindrical conductor having a diameter smaller than that of the second resonance element 3. A bonding layer made of a conductor between the +Z direction end of the first resonant element 2 and the second conductor portion 6 and joining the +Z direction end of the first resonant element 2 and the second conductor portion 6 together. 8 are provided.

Here, in the present embodiment, the “Q value” (Quality Factor) is a dimensionless parameter index indicating the energy storage capacity represented by the reciprocal (1/tan δ) of the dielectric loss (tan δ), and this value Means that the higher is, the less the dielectric loss is.

The conductors forming the second resonant element 3 and the third resonant element 4 can be formed using various known conductive materials such as metal and non-metal conductive materials. In order to improve the characteristics of the resonator, for example, a conductive material containing an Ag alloy as a main component such as Ag, Ag—Pd, or Ag—Pt, or a Cu-based, W-based, Mo-based, or Pd-based conductive material is used. A material or the like can be used.

The shield casing 1 has a rectangular parallelepiped box shape having a cavity 7 as a resonance space inside, and is connected to a reference potential. The reference potential refers to a potential also called a ground potential, a ground potential, or a ground potential. The shield housing 1 includes a first conductor portion 5 located on the −Z direction (lower side in FIG. 1) side and a plate-shaped second conductor portion 6 located on the +Z direction (upper side in FIG. 1) side. , And are joined by a conductive joining material. The first conductor portion 5 is a bottomed tubular body that is configured by four side wall portions and a bottom portion and has a concave cross section that is open in the +Z direction. The second conductor portion 6 is a rectangular flat plate-shaped body. Through

holes

9 and 10 used for connection with an external circuit are formed in the two opposing side wall parts of the first conductor part 5. A peripheral edge portion of the surface of the second conductor portion 6 facing in the −Z direction is joined to the end surface of the first conductor portion 5 facing in the +Z direction by a conductive bonding material, and the opening of the first conductor portion 5 is formed in the second conductor portion. Blocked by 6.

The first conductor portion 5 and the second conductor portion 6 can be formed using various known conductive materials such as metal and non-metal conductive materials. In order to improve the characteristics of the resonator, for example, a conductive material containing an Ag alloy as a main component such as Ag, Ag—Pd, or Ag—Pt, or a Cu-based, W-based, Mo-based, or Pd-based conductive material. Materials can be used.

As the conductive bonding material for bonding the first conductor portion 5 and the second conductor portion 6, various known conductive bonding materials such as solder and conductive adhesive can be used. In some cases, the first conductor portion 5 and the second conductor portion 6 may be mechanically fastened and joined to each other with screws or bolts while being electrically connected to each other. Although the inside of the cavity 7 is filled with air, it may be vacuum or filled with a gas other than air, for example, an inert gas.

The first resonant element 2 is arranged in the center of the cavity 7 in the plan view shown in FIG. 2 and has a cylindrical shape extending in the Z direction. Further, the first resonance element 2 is joined at the +Z direction end to the second conductor portion 6 by the joining layer 8 made of a conductive joining material. The bonding layer 13 has a thickness of about 1 mm by metalizing. The −Z direction end of the first resonant element 2 and the bottom surface of the first conductor portion 5 of the shield housing 1 are separated by a first distance ΔL1 in the ±Z direction. That is, the entire end surface of the first resonant element 2 in the +Z direction is joined to the surface of the second conductor portion 6 on the cavity 7 side, and the end surface of the first resonant element 2 in the −Z direction and the shield housing. The first conductor portion 5 and the bottom surface of the first conductor portion 5 are separated from each other by a first distance ΔL1 in the ±Z direction. When the electric field is concentrated on the dielectric, the resonance frequency can be lowered, but the resonance frequency of the higher mode is also lowered. Therefore, by separating the first resonant element 2 and the shield casing 1 with such a first gap ΔL1, the first resonant element 2 made of a dielectric material and the shield casing 1 made of metal are separated from each other. The resonance frequency of the higher-order mode can be increased by interposing the space filled with air or the inert gas having a low dielectric constant.

In this embodiment, the first resonant element 2 is made of a dielectric material as described above, and the second and third

resonant elements

3 and 4 are made of conductors. The first resonant element 2, the second resonant element 3, and the third resonant element 4 are arranged on the same axis with a straight line parallel to the Z axis as the central axis. That is, the second resonance element 3 is arranged in the center of the cavity 7 on the same axis as the first resonance element 2, and is realized as a cylindrical body having a straight line parallel to the ±Z directions as its center line.

Inside the second resonant element 3, the third resonant element 4 is arranged so as to form the same axis as the first resonant element 2 and the second resonant element 3 in a plan view. The second resonant element 3 is spaced apart from the first resonant element 2 by a third distance ΔL3 in the radial direction, and is disposed in the cavity 7 while being surrounded by the first resonant element 2. The end face of the −Z direction end of the second resonant element 3 is joined to the surface of the bottom of the first conductor portion 5 by a conductive joining material. The end face of the +Z direction end of the second resonant element 3 is separated from the surface of the second conductor portion 6 facing the +Z direction with a second gap ΔL2 in the +Z direction. The outer peripheral surface of the second resonant element 3 and the inner peripheral surface of the first resonant element 2 are spaced apart by a third distance ΔL3 in the radial direction.

The end surface of the +Z direction end of the third resonant element 4 is joined to the surface of the second conductor portion 6 facing the −Z direction by a conductive bonding material, and the end surface of the −Z direction end of the third resonant element 4 is The second resonance element 3 extends in the −Z direction from the end surface of the +Z direction end and is inserted into the second resonance element 3. The outer peripheral surface of the third resonant element 4 is spaced apart from the inner peripheral surface of the second resonant element 3 by a fourth distance ΔL4 in the radial direction, and in the XZ plane including the Z axis, the distance L1 in the Z direction. However, it is disposed so as to overlap the second resonant element 3.

With such a second spacing ΔL2, the space between the second resonant element 3 and the second conductor portion 6 serves as a dielectric gap that acts as a storage capacitor for electromagnetic energy, and the resonance is adjusted by adjusting the second spacing ΔL2. The frequency and Q factor can be controlled. In addition, the space between the first resonant element 2 and the second resonant element 3 becomes a capacitive gap that acts as a storage capacitance of electric field energy by the third interval ΔL3, and by adjusting the third interval ΔL3, the resonance frequency and The Q value can be controlled. Further, due to the fourth spacing ΔL4, the space between the second resonant element 3 and the third resonant element 4 serves as a dielectric gap that acts as a storage capacity for electromagnetic energy, and by adjusting the fourth spacing ΔL4, the resonance frequency and The Q value can be controlled.

The second resonant element 3 and the third resonant element 4 of the present embodiment can be formed using various known conductive materials such as metal and non-metal conductive materials. In order to improve the characteristics of the resonator, for example, a conductive material containing an Ag alloy as a main component such as Ag, Ag—Pd, or Ag—Pt, or a Cu-based, W-based, Mo-based, or Pd-based conductive material. Materials and the like can be appropriately selected and used.

The length of the first resonant element 2 in the Z direction may be 80% or more of the size of the cavity 7 in the ±Z direction, or 90% or more of the size of the cavity 7 in the ±Z direction. The second resonant element 3 may be surrounded by the first resonant element 2 at a portion that is half the length in the ±Z direction or more. The Z-direction length of the portion of the second resonance element 3 surrounded by the first resonance element 2 may be 50% or more of the Z-direction length of the first resonance element 2. From the viewpoint of further improving the electrical characteristics, the above ratio may be 80% or more. If it is 90% or more, the electrical characteristics are further improved. This is because, as the principle of this resonance mode, the coupling between the even mode and the odd mode of the second resonance element 3 and the third resonance element 4 is used. In this case, the larger the ratio of the lengths of the third resonance element 4 surrounded by the second resonance element 3 in the ±Z direction, the stronger the coupling between the even mode and the odd mode, and the further the resonance frequency of the even and odd mode becomes apart. .. In addition, the volume of the dielectric of the first resonant element 2 can further reduce the resonant frequency. Therefore, it is important that the ratio of the lengths of the first resonant element 2 and the second resonant element 3 in the ±Z direction is large to some extent. The size of the cavity 7, the diameter of the first resonant element 2, the fourth distance ΔL4 between the first resonant element 2 and the second resonant element 3, the thickness of the first resonant element 2 and the thickness of the second resonant element 3 are , The desired size, the resonance frequency of the fundamental mode resonance, and the resonance frequency of the higher order mode resonance. Such a resonator functions as a resonator having a resonance mode similar to a TEM (Transverse Electric and Magnetic) mode.

In the first resonant element 2, the pore area ratio of the joint portion 28 with the second conductor portion 6 may be lower than the pore area ratio of the central portion in the axial direction (±Z direction in the example shown in FIG. 1).

With such a configuration, the transfer of heat generated in the first resonant element 2 to the second conductor portion 6 due to resonance is promoted, so that the characteristics of the resonator due to heat generation (for example, resonance frequency, Q value). ) Can be reduced.

For example, the pore area ratio at the central portion in the axial direction (±Z direction in the example shown in FIG. 1) is 3% or less, and the difference from the pore area ratio of the joint portion 28 with the second conductor portion 6 is: It is 0.1% or more.

The joint portion 28 with the second conductor portion 6 refers to a region within a length of 10% in the −Z direction from the end face on the second conductor portion 6 side with respect to the entire length of the first resonant element 2 in the ±Z direction. The central portion in the axial direction refers to an area within 10% in the +Z direction and within 10% in the −Z direction from an imaginary plane located at the center between the end surfaces.

In the first resonant element 2, the pore area ratio of the inner peripheral surface layer portion and the outer peripheral surface layer portion are higher than the pore area ratio of the intermediate portion located between the inner peripheral surface layer portion and the outer peripheral surface layer portion. May be.

With such a configuration, when a coating layer (an outer peripheral surface coating layer and an inner peripheral surface coating layer described later) is formed on the outer peripheral surface or the inner peripheral surface of the first resonant element 2, the intermediate portion maintains high characteristics. On the other hand, the inner peripheral surface layer portion and the outer peripheral surface layer portion have a high anchor effect on the coating layer, and reliability can be maintained even if heat is repeatedly generated. It is also possible to form a coating layer on the outer peripheral surface and the inner peripheral surface to relieve the residual stress when minute voids remain in the pores.

For example, the pore area ratio of the middle portion is 1.5% or less, and the difference between the pore area ratio of the inner peripheral surface layer portion and the outer peripheral surface layer portion is 0.1% to 1%. is there.

The inner peripheral side surface layer portion is a region within 10% in the thickness direction from the inner peripheral surface with respect to the wall thickness of the first resonant element 2, and the outer peripheral side surface layer portion is relative to the wall thickness of the first resonant element 2. The area within 10% from the outer peripheral surface in the thickness direction. The intermediate portion refers to an area having a thickness of 10% or less from the virtual circumferential surface located between the inner peripheral surface and the outer peripheral surface toward the inner peripheral surface and a length of 10% or less toward the outer peripheral surface.

The porosity area ratio in each of the above areas may be obtained using the image analysis software “A image-kun” (ver2.52) (registered trademark, manufactured by Asahi Kasei Engineering Co., Ltd.).

Specifically, first, in order to obtain a surface to be measured, a cross section of the end face, the outer peripheral face, the inner peripheral face, and the central portion in the axial direction of the first resonant element 2 is used by using diamond abrasive grains having an average particle diameter D ₅₀ of 3 μm. And the cross section of the intermediate part is polished with a copper plate. Then, the surface to be measured is obtained by polishing with a tin plate using diamond abrasive grains having an average particle diameter D ₅₀ of 0.5 μm. Here, the arithmetic mean roughness Ra of the surface to be measured is, for example, 0.01 μm to 0.2 μm.

The surface to be measured is observed at a magnification of 200, and an average range is selected. For example, a range having an area of 0.105 mm ² (horizontal length 374 μm, vertical length 280 μm) is selected. Take an image with a CCD camera to obtain an observation image. For this observation image, the pore area ratio may be obtained by a method called particle analysis using the image analysis software “A image kun (ver2.52)”.

As a setting condition of this method, for example, a threshold value, which is an index showing the brightness of an image, is 86, brightness is dark, a small figure removal area is 1 μm ² , and a noise removal filter is provided. The threshold value may be adjusted according to the brightness of the observed image. The brightness was set to dark, the binarization method was set to manual, the small figure removal area was set to 1 μm ² and a noise removal filter was provided, and the threshold value was set so that the marker appearing in the observed image matches the shape of the pores. Should be adjusted.

As the dielectric material of the first resonant element 2, a known dielectric material such as dielectric ceramics can be used. For example, an oxide containing a rare earth element (Ln), Al, M (M is at least one of Ca and Sr) and Ti, Ba ₃ Ti ₁₂ Zn ₇ O ₃₄ , BaTiO ₃ , Pb ₄ Fe ₂ Nb ₂ O ₁₂ , Ferroelectric ceramics containing TiO ₂ or the like can be preferably used. When an oxide containing a rare earth element (Ln), Al, M (M is at least one of Ca and Sr) and Ti is used as the dielectric ceramic, the composition formula is aLn ₂ O _x ·bAl ₂ O ₃ ·cMO ·dTiO _3. ₂ (where 3≦x≦4), a, b, c and d are
0.056≦a≦0.214 (1)
0.056≦b≦0.214 (2)
0.286≦c≦0.500 (3)
0.230<d<0.470 (4)
a+b+c+d=1 (5)
Satisfying the above condition, the crystal system is an oxide having at least one of hexagonal crystal and orthorhombic crystal of 80% by volume or more, and at least a part of the oxide of Al is β-Al ₂ O ₃ and θ-Al ₂ with present as at least one of the crystalline phases of O _3, may _beta-Al 2 _{O 3} and _θ-Al 2 _{O 3} of which at least one crystalline phase 1 / 100,000 include 1-3% by volume.

With such a configuration, the first resonant element 2 having a high relative permittivity εr and a high Q value in a high frequency region can be obtained.

The existence of β-Al ₂ O ₃ and θ-Al ₂ O ₃ crystals, and the identification of the crystal system of each crystal, were carried out by processing the above dielectric ceramics using an ion thinning device (for example, manufactured by Technoorg Linda), It may be performed by observation with a transmission electron microscope, analysis with a selected area electron diffraction image, measurement with energy-dispersive X-ray spectroscopy (EDS analysis), measurement with a minute X-ray diffraction method, or the like.

When used as a dielectric ceramic containing Ba ₃ Ti ₁₂ Zn ₇ O ₃₄ , it contains Ba ₃ Ti ₁₂ Zn ₇ O ₃₄ as a main component and contains at least one of BaTi ₄ O ₉ and Ba ₃ Ti ₁₂ Zn ₇ O _34. I hope you are there.

Also in the case of such a configuration, the first resonant element 2 having a high relative permittivity εr and a high Q value in a high frequency region can be obtained.

Ba ₃ Ti ₁₂ Zn ₇ O ₃₄ , BaTi ₄ O ₉ and Ba ₃ Ti ₁₂ Zn ₇ O ₃₄ were identified by an X-ray diffraction method, and the Rietveld method was used as the main component, which was the most abundant component. Just specify.

In some cases, a resin such as an epoxy resin can be used. The first resonant element 2 and the shield housing 1 are joined by the joining layer 13. As the conductive bonding material of the bonding layer 13, various known conductive bonding materials such as a conductive adhesive can be used.

The resonator having a configuration based on the resonator of the present disclosure described in the above-mentioned Patent Document 1 and the like has a problem that miniaturization is difficult. When the size is reduced by filling the entire inside of the shield case with a dielectric material, the resonance frequency of higher-order mode resonance is greatly reduced and approaches the resonance frequency of fundamental-mode resonance, which causes a problem that electrical characteristics deteriorate. is there. Further, when a dielectric is arranged between the open end of the columnar conductor as the first resonance element and the shield case to reduce the size, there is a problem that the Q value is greatly reduced and the electrical characteristics are deteriorated.

In contrast to such a resonator based on the resonator of the present disclosure, the resonator of the present embodiment described above is smaller than the resonator based on the resonator of the present disclosure such as Patent Document 1. And the reduction of the resonance frequency of higher-order mode resonance is suppressed as compared with a resonator having a configuration based on the resonator of the present disclosure such as Patent Document 1 filled with a dielectric inside the shield case. Further, it is possible to suppress a decrease in Q value more than a case where a dielectric is arranged between the open end of the columnar conductor of the resonator having a configuration based on the resonator of the present disclosure such as Patent Document 1 and the shield case. be able to. That is, the resonator of the present embodiment has a large difference between the resonance frequency of the fundamental mode resonance and the resonance frequency of the higher order mode resonance, has a high Q value, has excellent electrical characteristics, and is small in size. That is, the resonator of this embodiment is small and has excellent electric characteristics.

Further, the resonator of the present embodiment having the above-mentioned configuration can be manufactured, for example, as follows. First, a structure in which the +Z direction ends of the first resonance element 2 and the third resonance element 4 are joined to the second conductor portion 6 is produced. In addition, a structure in which the +Z direction end of the second resonant element 3 is joined to the first conductor portion 5 is manufactured. Then, by joining the first conductor portion 5 and the second conductor portion 6 so that the first resonant element 2 and the third resonant element 4 are located inside the second resonant element 3, the present embodiment Can be manufactured. Therefore, the +Z-direction ends of the first resonance element 2 and the third resonance element 4 are reliably bonded to the second conductor portion 6, and the +Z-direction ends of the second resonance element 3 are reliably bonded to the first conductor portion 5. It is possible to easily manufacture a resonator having high reliability.

Further, in the resonator of the present embodiment, the second resonant element 3 and the third resonant element 4 have a tubular shape. Therefore, the single first resonance element 2 having a simple shape can surround the second resonance element 3 and the third resonance element 4 with a fourth distance ΔL4 from the second resonance element 3 in the radial direction. Therefore, it is more excellent in mass productivity.

FIG. 3 is a graph showing the relationship between the third spacing ΔL3 between the second resonant element 3 and the third resonant element 4 and the resonant frequency, and FIG. 4 shows the relationship between the second resonant element 3 and the third resonant element 4. 6 is a graph showing the relationship between the third interval ΔL3 and the Q value, and FIG. 5 is a graph showing the relationship between the length of the third resonant element 4 and the resonant frequency. FIG. 6 is a graph showing the relationship between the resonance frequency and the Q value, and FIG. 7 is a graph showing the relationship between the resonance frequency and the Q value.

The inventor of the present invention has found that the third radial spacing ΔL3 between the second resonant element 3 and the third resonant element 4 and the length in the ±Z direction in which the third resonant element 4 is surrounded by the second resonant element 3. In order to confirm the electrical characteristics of the resonator with respect to, a numerical analysis using a computer was performed, and a simulation analysis was performed using a numerical analysis model simulating the resonator of the present embodiment. In performing this simulation analysis, the through

holes

9 and 10 in the numerical analysis model of the resonator were omitted and the numerical analysis processing was performed.

In the numerical analysis model, the dielectric material forming the first resonant element 2 has a relative permittivity of 43 and a dielectric loss tangent of 3×10 ⁻⁵ . The electrical conductivity of the second resonant element 3 and the third resonant element 4 was 4.2×10 ⁷ S/m. The dimension of the cavity 7 in the ±X direction and the dimension of the ±Y direction was 38 mm, and the dimension of the cavity 7 in the ±Z direction was 20 mm. The inner diameter of the first resonant element 2 was 11.2 mm, the outer diameter of the second resonant element 3 was 25.2 mm, and the length of the first resonant element 2 in the ±Z direction was 19 mm. The inner diameter of the second resonant element 3 was 8 mm, the outer diameter of the second resonant element 3 was 10 mm, and the length of the second resonant element 3 in the ±Z direction was 19 mm. The inner diameter of the third resonant element 4 is 4 mm, the outer diameter of the third resonant element 4 is 6 mm, and the lengths of the third resonant element 4 in the ±Z direction are 5 mm, 7 mm, 10 mm, 12 mm, 14 mm, 16 mm, There are seven types of 18 mm. The third radial distance ΔL3 between the second resonant element 3 and the third resonant element 4 was changed in multiple steps such as 1.0 mm, 0.5 mm, and 0.5 mm to 2.0 mm.

The results of the simulation are shown in Table 1, Table 2 and Table 3 below.

As shown in Table 1, the third distance ΔL3 in the radial direction between the second resonant element 3 and the third resonant element 4 is set to a constant value of 1.0 mm, and the length of the third resonant element 4 in the ±Z direction is set. Was changed to 5 mm, 7 mm, 10 mm, 12 mm, 14 mm, 16 mm, and 18 mm, and the resonance frequency and the Q value were calculated for each length of 5 mm to 18 mm. As a result, when the radial third spacing ΔL3 between the second resonant element 3 and the third resonant element 4 is constant, the shorter the length of the third resonant element 4 in the ±Z direction, the higher the Q value. It was confirmed that

As shown in Table 2, the third distance ΔL3 in the radial direction between the second resonant element 3 and the third resonant element 4 is set to a constant value of 0.5 mm, and the length of the third resonant element 4 in the ±Z direction is set. Was changed to 5 mm, 7 mm, 10 mm, and 12 mm, and the resonance frequency and Q value were calculated for each length of 5 mm to 12 mm. As a result, the Q value when the length of the third resonant element 4 is 5 mm is 3005, whereas the Q value when the maximum length is 12 mm is 2421. Therefore, it was confirmed that the shorter the length of the third resonant element 4, the higher the Q value. When the third resonant element has the same 5 mm in Table 1 and Table 2 described above, the Q value in Table 2 in which the third interval ΔL3 is 0.5 mm is 3005, whereas the third interval ΔL3 is 1 mm. In Table 1 of 0.0 mm, it was confirmed that the Q value was as high as 3212, and that the larger the radial distance between the second resonant element 3 and the third resonant element 4, the higher the Q value obtained.

As shown in Table 3, the third radial spacing ΔL3 between the second resonant element 3 and the third resonant element 4 is 0.5 mm, 0.8 mm, 1.0 mm, 1.5 mm, 2.0 mm. The length of the third resonance element 4 in the ±Z direction was changed to a constant value of 12 mm. As a result, it was confirmed that, when the length of the third resonant element 4 was constant, the Q value increased as the third interval ΔL3 increased.

<Second Embodiment>
FIG. 8 is a sectional view schematically showing the resonator according to the second embodiment of the present disclosure. In addition, the same reference numerals are given to the portions corresponding to the above-described embodiment. The resonator of the present embodiment is provided at the bottom of the first conductor portion 5, is made of a conductor, and changes the amount of protrusion in the +Z direction from the first conductor portion 5 inside the second resonant element 3 to change the frequency. It further includes a first frequency adjuster 14 for adjusting, and a screw member 15 made of a conductive material for joining the third resonant element 4 to the second conductor portion 6. The resonance frequency can be adjusted with high accuracy by adjusting the amount of protrusion of the first frequency adjuster 14 into the cavity 7. The first frequency adjuster 14 functions as a tuning screw, and by adjusting the protrusion amount of the first frequency adjuster 14, the capacitive gap changes, and thus the resonance frequency can be controlled. Such a resonator structure is called a re-entrant combline resonator.

<Third Embodiment>
FIG. 9 is a sectional view schematically showing a resonator according to the third embodiment of the present disclosure. In addition, the same reference numerals are given to the portions corresponding to the above-described embodiment. The resonator of the present embodiment is provided in the second conductor portion 6 and is made of a conductor. The frequency is adjusted by changing the amount of protrusion in the −Z direction from the second conductor portion 6 inside the third resonant element 4. It further includes a second frequency adjuster 16 for doing so, and a screw member 17 made of a conductive material for joining the second resonant element 3 to the first conductor portion 5. The resonance frequency can be adjusted with high accuracy by adjusting the amount of protrusion of the second frequency adjuster 16 into the cavity 7.

<Fourth Embodiment>
FIG. 10 is a cross-sectional view schematically showing the resonator according to the fourth embodiment of the present disclosure. In addition, the same reference numerals are given to the portions corresponding to the above-described embodiment. In the resonator of the present embodiment, the second resonance element 3 has the dielectric layer 18 made of a dielectric material, and the coating layer 19 made of a conductor formed on the outer peripheral surface of the dielectric layer 18, and the -Z direction. Is joined to the first conductor portion 5 by a joining layer 20 made of a conductive material. The dielectric layer 18 is made of the same material as the first resonant element 2, that is, a conductive material containing Ag alloy such as Ag, Ag—Pd, and Ag—Pt as a main component, or Cu-based, W-based, Mo-based, or Pd-based material. An electrically conductive material of a system can be appropriately selected and used, and is formed as a conductive film having a thickness of, for example, 5 to 20 μm by a metallizing process. The minimum film thickness needs to be thicker than the thickness of the skin effect at the frequency used. The bonding layer 20 and the first conductor portion 5 may be bonded using solder or the like. In this case, the solder functions as a conductive bonding material. By adopting such a structure, the Q value can be increased by about 40 in calculation.

<Fifth Embodiment>
FIG. 11 is a cross-sectional view schematically showing the resonator according to the fifth embodiment of the present disclosure. In addition, the same reference numerals are given to the portions corresponding to the above-described embodiment. The resonator of the present embodiment has a configuration in which the first frequency adjuster 14 and the screw member 15 of the embodiment shown in FIG. 8 are used, and the second resonance including the dielectric layer 18 and the coating layer 19 of the embodiment shown in FIG. The element 3 is combined.

With such a configuration, as in the above-described second embodiment, the first frequency adjuster 14 functions as a tuning screw, and by adjusting the protrusion amount of the first frequency adjuster 14, the capacitive gap is reduced. The resonance frequency can be adjusted accordingly.

<Sixth Embodiment>
FIG. 12 is a sectional view schematically showing the resonator according to the sixth embodiment of the present disclosure. In addition, the same reference numerals are given to the portions corresponding to the above-described embodiment. In the resonator of the present embodiment, as in the embodiment of FIG. 10, the second resonance element 3 has the dielectric layer 18 and the coating layer 19 made of a conductor formed on the outer peripheral surface of the dielectric layer 18. The third resonance element 4 is configured to have the dielectric layer 21 and the coating layer 22 made of a conductor formed on the outer peripheral surface of the dielectric layer 21. By adopting such a configuration, the second resonant element 3 and the third resonant element 4 can be realized by, for example, a cylindrical dielectric and a metal film covering the outer peripheral surface thereof. As a result, the weight can be reduced and the weight can be reduced as compared with the case where the second resonant element 3 and the third resonant element 4 are made of only metal.

<Seventh Embodiment>
FIG. 13 is a sectional view schematically showing the resonator according to the seventh embodiment of the present disclosure. In addition, the same reference numerals are given to the portions corresponding to the above-described embodiment. The resonator of the present embodiment includes a first frequency adjuster 14 similar to that of the embodiment of FIG. 11, in addition to the configuration of the embodiment shown in FIG. Even with such a configuration, as in the above-described embodiment, by adjusting the amount of protrusion of the first frequency adjuster 14 into the cavity 7, fine adjustment of the resonance frequency is possible, and the size of the resonator can be reduced. Can be planned.

<Eighth Embodiment>
FIG. 14 is a sectional view schematically showing the resonator of the eighth embodiment of the present disclosure. In addition, the same reference numerals are given to the portions corresponding to the above-described embodiment. The resonator of the present embodiment is made of a conductor, and an outer peripheral surface coating layer 25 provided so as to cover at least a part of the outer peripheral surface of the first resonant element 2 in the vicinity of an end in the +Z direction, and the first resonant element 2 The inner peripheral surface coating layer 26 may be provided so as to cover at least a part of the inner peripheral surface near the end in the +Z direction. By adopting such a configuration, for example, since the metal film may be formed on the outer peripheral surface and the inner peripheral surface of the cylindrical dielectric by a known film forming method, the outer peripheral surface coating layer 25 and the inner peripheral surface can be easily formed. The first resonant element 2 having the surface coating layer 26 can be manufactured, and the manufacturing of the resonator can be facilitated.

<Ninth Embodiment>
FIG. 15 is a sectional view schematically showing the resonator according to the ninth embodiment of the present disclosure. In addition, the same reference numerals are given to the portions corresponding to the above-described embodiment. In the resonator of the present embodiment, the end of the first resonant element 2 on the +Z direction side and the end of the third resonant element 4 on the +Z direction side are on the surface of the second conductor portion 6 facing in the −Z direction. It may be joined to the supporting portion 27 made of a dielectric material provided. The support portion 27 has a plate-shaped base portion 27a and a protrusion portion 27b integrally provided on one main surface of the base portion 27a. In this case, a concave portion 6a into which the protrusion 27b is fitted is formed on the one main surface side of the second conductor portion 6 which faces the cavity 7. By adopting such a configuration, the support portion 27 in which the first resonant element 2 and the third resonant element 4 are joined by the conductive joining material is prepared, and the protrusion 27b is provided in the concave portion 6a of the second conductor portion 6. Since the support portion 27 is joined with the conductive joining material while fitting the fitting portion in the recess 6a and the assembly is joined to the first conductor portion 5, the assembling work is simplified and the manufacturing process of the resonator is facilitated. Can be converted. With such a configuration, the resonance frequency can be finely adjusted and the size of the resonator can be reduced, as in the above-described embodiment.

<Tenth Embodiment>
FIG. 16 is a cross-sectional view schematically showing the resonator according to the tenth embodiment of the present disclosure. The portions corresponding to those in the above-described embodiments are designated by the same reference numerals. In the resonator of this embodiment, the outer diameter of the second frequency adjuster 16 is larger than that of the embodiment of FIG. The larger the outer diameter of the second frequency adjuster 16 is, the larger the frequency adjustment range, which is also referred to as the adjustable tuning range, is. Therefore, it is possible to realize a resonator having a wide adjustment range of the resonance frequency. With such a configuration, similarly to the above-described embodiment, it is possible to finely adjust the resonance frequency, reduce the size of the resonator, and realize the resonator in which the resonance frequency adjuster is integrated. Therefore, even if the resonance frequencies are different, it is possible to realize the resonators having the same configuration, and it is possible to reduce the manufacturing cost and improve the productivity.

<Filter>
17 is a cross-sectional view schematically showing the filter of the embodiment of the present disclosure, and FIG. 18 is a perspective view of the filter shown in FIG. In addition, the same reference numerals are given to the portions corresponding to the above-described embodiment. The filter F of the present embodiment includes a plurality of

resonators

30a and 30b forming a row, a first terminal portion 31 electrically or electromagnetically connected to the resonator 30a located at one end of the row, and a row of the

resonators

30a and 30b. The resonator 30b located at the other end has a second terminal portion 32 that is electrically or electromagnetically connected.

With such a configuration, the filter is used as a filter of a microwave communication device typified by a mobile phone, that is, a filter, and passes only the frequency band required for transmission and reception and blocks the unnecessary frequency band. In other communication terminals, it is mainly used as an antenna duplexer such as a duplexer. Unlike the filter using the piezoelectric element, the filter of this embodiment has no mechanical vibration, and the electromagnetic wave itself resonates in the cavity 7. In the cavity 7, since the wavelength of the electromagnetic wave is shortened to 1/√εr (εr: relative permittivity) of free space, the size of the resonance system can be reduced.

<Communication device>
FIG. 19 is a block diagram showing a communication device in which the filters shown in FIGS. 17 and 18 are incorporated. In addition, the same reference numerals are given to the portions corresponding to the above-described embodiment. The communication device of this embodiment includes an antenna 40, a communication circuit 41, and a filter F connected to the antenna 40 and the communication circuit 41. The filter F is the filter of the above-described embodiment. The antenna 40 and communication circuit 41 are known and conventional.

The communication device of the present embodiment having such a configuration can be downsized and improve communication quality because it removes unnecessary electric signals by using the above-described filter that is small and has excellent electric characteristics. You can

The present disclosure can have the following embodiments.

According to the resonator of the present disclosure, a small-sized resonator having excellent electric characteristics can be obtained. According to the filter of the present disclosure, a filter having a small size and excellent electric characteristics can be obtained. According to the communication device of the present disclosure, it is possible to obtain a small-sized communication device having excellent communication quality.

The present disclosure can be implemented in various other forms without departing from the spirit or the main feature. Therefore, the above-described embodiments are merely examples in all respects, and the scope of the present disclosure is set forth in the claims and is not bound by the specification text. Furthermore, all modifications and changes belonging to the scope of the claims are within the scope of the present disclosure.

DESCRIPTION OF SYMBOLS 1 Shield case 2 1st resonance element 3 2nd resonance element 4 3rd resonance element 5 1st conductor part 6 2nd conductor part 7 Cavity 8 and 9 Through

hole

13 and 20 Bonding layer 14 1st

frequency adjusting tool

15 and 17 Screw member 16

Second frequency adjuster

18,21

Dielectric layer

19,22 Covering layer 25 Outer peripheral surface coating layer 26 Inner peripheral surface coating layer 28 Joining portion

Claims

A shield housing having a cavity inside, including a first conductor portion located on the first direction side and a second conductor portion located on the second direction side opposite to the first direction. A shield housing,
A first resonant element made of a tubular dielectric, wherein an end in the second direction is joined to the second conductor portion, and an end in the first direction is located apart from the first conductor portion. A first resonant element disposed in the cavity as described above,
A cylindrical second resonance element, wherein an end in the first direction is joined to the first conductor portion, an end in the second direction is separated from the second conductor portion, and the first resonance element is provided. A second resonant element disposed in the cavity so as to be surrounded by
A cylindrical third resonance element, wherein an end in the second direction is joined to the second conductor portion, an end in the first direction is separated from the first conductor portion, and the second resonance element is provided. A third resonance element disposed in the cavity so as to be surrounded by the resonator.
The resonator according to claim 1, wherein the second resonant element is made of a conductor.
The resonator according to claim 1, wherein the second resonant element includes a dielectric layer made of a dielectric material and a coating layer made of a conductor formed on an outer peripheral surface of the dielectric layer.
The resonator according to any one of claims 1 to 3, wherein the third resonant element is made of a conductor.
The resonance according to any one of claims 1 to 3, wherein the third resonant element includes a dielectric layer made of a dielectric material and a coating layer made of a conductor formed on an outer peripheral surface of the dielectric layer. vessel.
It is located between the end of the first resonant element in the second direction and the second conductor portion and is made of a conductor. The end of the first resonant element in the second direction and the second conductor portion are connected to each other. The resonator according to any one of claims 1 to 5, further comprising a bonding layer for bonding.
A first frequency adjuster, which is provided on the first conductor portion and is made of a conductor, for adjusting the frequency by changing the protrusion amount from the first conductor portion inside the second resonant element. 7. The resonator according to claim 1, further comprising one frequency adjuster.
A second frequency adjuster, which is provided on the second conductor portion and is made of a conductor, for adjusting the frequency by changing the protrusion amount from the second conductor portion inside the third resonant element. The resonator according to any one of claims 1 to 7, further comprising a second frequency adjuster.
The resonator according to any one of claims 1 to 8, which has a support portion which is located between the second conductor portion and an end of the first resonance element in the second direction and which includes a support made of a dielectric material.
The resonator according to any one of claims 1 to 9, comprising a conductor, and an outer peripheral surface coating layer provided so as to cover at least a part of an outer peripheral surface of the first resonant element.
The resonator according to any one of claims 1 to 10, comprising a conductor, and an inner peripheral surface coating layer provided so as to cover at least a part of an inner peripheral surface of the first resonant element.
The resonator according to any one of claims 1 to 11, wherein the first resonant element has a pore area ratio of a joint portion with the second conductor portion lower than a pore area ratio of a central portion in the axial direction.
In the first resonant element, the pore area ratio of the inner peripheral side surface layer portion and the outer peripheral side surface layer portion have a pore area ratio of an intermediate portion located between the inner peripheral side surface layer portion and the outer peripheral side surface layer portion. Resonator according to any one of claims 1 to 12, which is higher.
The resonator according to any one of claims 1 to 13, wherein the plurality of resonators are arranged in a row so as to be electromagnetically coupled to each other,
A first terminal portion electrically or electromagnetically connected to the resonator located at one end of the row;
A filter having a second terminal portion electrically or electromagnetically connected to the resonator located at the other end of the row.
A communication device having an antenna, a communication circuit, and the filter according to claim 14 connected to the antenna and the communication circuit.