WO2020155176A1

WO2020155176A1 - Light-emitting apparatus

Info

Publication number: WO2020155176A1
Application number: PCT/CN2019/074690
Authority: WO
Inventors: 徐宸科; 余长治; 黄兆武; 时军朋; 黄永特
Original assignee: 泉州三安半导体科技有限公司
Priority date: 2019-02-03
Filing date: 2019-02-03
Publication date: 2020-08-06
Also published as: CN110178230A

Abstract

Disclosed is a light-emitting apparatus. In some implementations, the light-emitting apparatus comprises: a bracket having a mounting surface for mounting a light-emitting diode chip, and a first bonding wire region and a second bonding wire region, wherein the first bonding wire region and the second bonding wire region are electrically isolated from each other; an LED chip mounted on the mounting surface of the bracket and containing a substrate, and a first electrode, a second electrode and an epitaxial laminated layer located on the substrate, wherein the epitaxial laminated layer has an upper surface and a lower surface opposite each other; and a packaging material layer for sealing the LED chip on the bracket. The first electrode and the second electrode are formed on the substrate and located on an outer side of the epitaxial laminated layer, and the first electrode and the second electrode are electrically connected to the lower surface of the epitaxial laminated layer, and also are respectively connected to the first bonding wire region and the second bonding wire region of the bracket through leads.

Description

Light emitting device Technical field

[0001] The present invention relates to the field of semiconductor devices, specifically a light emitting device.

Background technique

[0002] Light-emitting diodes are widely used as solid-state lighting sources. Compared with traditional incandescent bulbs and fluorescent lamps, light-emitting diodes have the advantages of low power consumption and long life. Therefore, light-emitting diodes have gradually replaced traditional light sources and are used in various fields, such as traffic signs, backlight modules, street lighting, Medical equipment, etc. Summary of the invention

technical problem

The solution to the problem

Technical solutions

[0003] According to a first aspect of the present invention, a light emitting device includes: a bracket having a mounting surface for mounting a light-emitting diode chip, and a first wire bonding area and a second wire bonding area, the first bonding The wire area and the second wire bonding area are electrically isolated from each other; the LED chip, mounted on the mounting surface of the bracket, includes a substrate, and a first electrode, a second electrode, and an epitaxial stack located thereon. The epitaxial stack Having opposite upper and lower surfaces; a layer of packaging material for sealing the LED chip on the support; the first electrode and the second electrode are formed on the substrate and located on the epitaxial laminate On the one hand, it forms an electrical connection with the lower surface of the epitaxial laminate, and on the other hand, it is connected to the first wire bonding area and the second wire bonding area of the bracket respectively through leads.

[0004] According to a second aspect of the present invention, a light emitting device includes: a bracket having a mounting surface for mounting a light emitting diode chip, and a first wire bonding area and a second wire bonding area, the first bonding The wire area and the second wire bonding area are electrically isolated from each other; the LED chip, mounted on the mounting surface of the bracket, includes a substrate, and a first electrode, a second electrode, an electrical connection layer, and an epitaxial stack on the substrate, The epitaxial laminate has opposite upper and lower surfaces; a layer of packaging material for sealing the LED chip on the support; on the one hand, the first electrode and the second electrode are separated from the The lower surface of the epitaxial laminate is led out toward the upper surface of the epitaxial laminate, and on the other hand, it is respectively connected to the first wire bonding area of the support through leads And the second wire bonding area.

[0005] According to a third aspect of the present invention, a light emitting device includes: a bracket having a mounting surface for mounting an LED chip; and an LED chip, including a substrate and an epitaxial laminate, mounted on the mounting surface of the bracket , Having opposite upper and lower surfaces, where the upper surface is the light-emitting surface; a packaging material layer covering the surface of the LED chip, sealing the LED chip on the support.

[0006] Further, the light emitting device further includes a first metal reflective layer and a second metal reflective layer, the thickness of the LED chip is defined as T, and the distances from the first and second metal reflective layers to the light-emitting surface of the LED chip are respectively H1 and H3, bei_l<H2<H/2.

[0007] According to a fourth aspect of the present invention, a light emitting device includes: a bracket having a mounting surface for mounting an LED chip; and an LED chip, including a transparent substrate and an epitaxial laminate, and mounted on the mounting surface of the bracket On; a layer of packaging material covering the surface of the LED chip to seal the LED chip on the bracket.

[0008] Further, a first reflective layer is provided above the transparent substrate, and a second reflective layer is provided below the transparent substrate. The light emitted by the LED chip enters the packaging material layer, and part of the light enters after being reflected or scattered. The transparent substrate is reflected by the first and second reflective layers and then exits the substrate.

[0009] According to a fifth aspect of the present invention, a light emitting device includes: a bracket having a mounting surface for mounting LED chips; two or more LED chips mounted on the mounting surface of the bracket; packaging material The layer covers the surface of the LED chip and seals the LED chip on the support. The light-emitting angle of the LED chip is less than or equal to 120°, and the upper surface of the LED chip is the light-emitting surface. The LED chip includes a first electrode, a second electrode, and a reflective layer. The first and second electrodes face upward, and the reflective layer is connected to the reflective layer. The distance of the light emitting surface is less than 10 microns.

The beneficial effects of the invention

Beneficial effect

[0010] Other features and advantages of the present invention will be described in the following description, and partly become obvious from the description, or understood by implementing the present invention. The purpose and other advantages of the present invention can be realized and obtained through the structures specifically pointed out in the specification, claims and drawings.

Brief description of the drawings

Description of the drawings [0011] The accompanying drawings are used to provide a further understanding of the present invention, and constitute a part of the specification, and are used to explain the present invention together with the embodiments of the present invention, and do not constitute a limitation to the present invention. In addition, the data in the drawings is a description summary, not drawn to scale.

[0012] FIG. 1 is a schematic diagram illustrating the structure of a conventional light emitting diode package.

[0013] FIG. 2 is a schematic diagram illustrating the structure of a conventional light emitting diode package.

[0014] FIG. 3 is a schematic diagram illustrating light-emitting devices of some examples of the present invention.

[0015] FIG. 4 is a schematic diagram illustrating the LED chip structure of the light-emitting device of some embodiments.

[0016] FIG. 5 is a schematic diagram illustrating the LED chip structure of the light-emitting device of some embodiments.

[0017] FIG. 6 is a schematic diagram illustrating the LED chip structure of the light-emitting device of some embodiments.

[0018] FIG. 7 is a schematic diagram illustrating light-emitting devices of some examples of the present invention.

[0019] FIG. 8 is a schematic diagram illustrating part of the light path of the light emitting device shown in FIG. 7.

[0020] FIG. 9 is a schematic diagram illustrating light emitting devices of some examples of the present invention.

[0021] FIG. 10 is a schematic diagram illustrating the LED chip structure of the light emitting device according to some embodiments.

[0022] FIG. 11 is a schematic diagram illustrating light-emitting devices of some examples of the present invention.

[0023] FIG. 12 is a schematic diagram illustrating the LED chip structure of the light emitting device according to some embodiments.

[0024] FIG. 13 is a schematic diagram illustrating the LED chip structure of the light emitting device according to some embodiments.

[0025] FIG. 14 is a schematic diagram illustrating light-emitting devices of some examples of the present invention.

[0026] FIG. 15 is a schematic diagram illustrating light-emitting devices of some examples of the present invention.

[0027] FIG. 16 is a schematic diagram illustrating the LED chip structure of the light emitting device according to some embodiments.

[0028] FIG. 17 is a schematic diagram illustrating light-emitting devices of some examples of the present invention.

[0029] FIG. 18 is a schematic diagram illustrating light-emitting devices of some examples of the present invention.

[0030] FIG. 19 is a schematic diagram illustrating light emitting devices of some examples of the present invention.

[0031] FIG. 20 is a schematic diagram illustrating light emitting devices of some examples of the present invention.

[0032] FIG. 21 is a schematic diagram illustrating light-emitting devices of some examples of the present invention.

[0033] FIG. 22 is a schematic diagram illustrating light-emitting devices of some examples of the present invention.

[0034] FIG. 23 is a schematic diagram illustrating light-emitting devices of some examples of the present invention.

[0035] FIGS. 24 and 25 are a schematic plan view and a partial side sectional view, respectively, illustrating light-emitting devices of some examples of the present invention [0036] FIG. 26 is a schematic diagram illustrating light-emitting devices of some examples of the present invention.

Invention embodiment

Embodiments of the invention

[0037] The light-emitting diode chip of the present invention and the manufacturing method thereof will be described in detail below with reference to the schematic diagram. Before further introducing the present invention, it should be understood that since specific embodiments can be modified, the present invention is not limited to the following The specific embodiment. It should also be understood that since the scope of the present invention is only limited by the appended claims, the embodiments adopted are only introductory rather than restrictive. Unless otherwise specified, all technical and scientific terms used herein have the same meaning as commonly understood by those of ordinary skill in the art.

[0038] In the following description, similar or identical components will be represented by the same numbers.

[0039] FIG. 1 shows a conventional LED light-emitting device, including a packaging support 110, an LED chip 120 and a packaging material layer 130, wherein the support 110 includes a bottom 111 and side walls 112, wherein the upper surface of the bottom is provided with a chip mounting area 1101 The first wire bonding area 1102 and the second wire bonding area 1103, wherein the first wire bonding area 1102 and the second wire bonding area 1103 are electrically isolated from each other, and the LED chip 120 adopts a horizontal structure and is mounted on the chip mounting area 1101, The p and n electrodes are located on the light-emitting surface, and are respectively connected to the first wire bonding area 1102 and the second wire bonding area 1103 of the bracket 110 through the leads 141 and 142, and the encapsulation layer 130 seals the chip 120 on the bracket 110. Further, the package support 110 may include a bottom 111 and a side wall 112, and the two form a space for accommodating the LED chip 120. In the light-emitting device, the electrodes of the LED chip 120 are located on the light-emitting surface, and have light-shielding and/or light-absorbing effects. On the other hand, the electrode is located on the epitaxial laminate, and the wire bonding process may cause damage to the epitaxial laminate.

[0040] FIG. 2 shows another conventional LED lighting device. The LED chip 120 used in the light-emitting device has a flip-chip structure, and its electrodes face the bottom surface 111 of the support. The light-emitting device can solve the problem of light-shielding and absorption of light on the light-emitting surface of the light-emitting device shown in FIG. 1. However, when the flip chip is mounted on the bracket, special equipment and alignment are required.

[0041] FIG. 3 shows a light emitting device implemented in accordance with the present invention. The light emitting device includes: a bracket 210, an LED chip 220, and a packaging material layer 230. Specifically, the bracket 210 includes a bottom portion 211 and a wall portion 212 to form a cup structure. The upper surface of the bottom portion 211 is provided with a chip mounting area 2101, a first wire bonding area 2102, and a second wire bonding area 2103. The area 2102 and the second wire bonding area 2103 are electrically isolated from each other. LED chip 22 0 is installed on the mounting area 2101 of the bracket with the light emitting surface facing upward, and its p and n electrodes are respectively connected to the first wire bonding area 2102 and the second wire bonding area 2103 of the bracket 210 through the leads 241 and 242. The packaging material layer encapsulates the LED chip on the support.

[0042] FIG. 4 shows the structure of an LED chip 220 used in the light-emitting device shown in FIG. 3, the LED chip sequentially comprising from top to bottom: an epitaxial laminate 2210, a first electrode 2221, a second electrode 2222, electricity The layer 2240 and the substrate 2230 are connected. The epitaxial stack of the LED chip is supported by the substrate 2230, and the upper surface S11 of the epitaxial stack 2210 serves as the light-emitting surface without a growth substrate. Here, "no growth substrate" means that the growth substrate used for growth is removed from the epitaxial stack or at least greatly thinned if necessary.

[0043] Specifically, the epitaxial stack 2210 has an upper surface S11 and a lower surface S12 opposite to each other, wherein the upper surface S11 serves as a light-emitting surface and includes a first semiconductor layer 2211, an active layer 2212, and a second semiconductor layer 2212. The semiconductor layer 2211 and the second semiconductor layer 2213 may be a p-type semiconductor layer and an n-type semiconductor layer, respectively. For example, the first semiconductor layer and the second semiconductor layer can be expressed by the chemical formula Al _x In _y Ga _(1-xy) N (where 0<x<l, 0<y<l, (Kx+y^l) Nitride semiconductor is formed, but is not limited to this, GaAs-based semiconductor or GaP-based AlGalnP semiconductor material may also be used. The active layer 2212 may have a nitride-based multiple quantum well structure (MQW), such as InGaN/GaN, GaN/ AlGaN, but not limited to this, other semiconductors, such as Galas/AlGaAs, InGaP/GaP, GaP/AlGaP, etc. can also be used.

[0044] The electrical connection layer 2240 is formed on the lower surface S12 of the epitaxial stack, and includes a first electrical connection layer 2241 and a second electrical connection layer 2242. Both ends of the first electrical connection layer 2241 are respectively connected to the first semiconductor layer 2211 and Both ends of the first electrode 2221 and the second electrical connection layer 2241 are respectively connected to the second semiconductor layer 2213 and the second electrode 2222. The materials of the first electrical connection layer 2241 and the second electrical connection layer 2242 may be the same or different. The material of the first electrical connection layer 2241 can be Ag, Au, Ti, Al, Cr, Pt, TiW, Ni or any combination of the above, wherein Ag and Al are suitable as metal reflective materials, and TiW is suitable as metal coating materials, To prevent metal diffusion, Cr, Ni, and Au are suitable as ohmic contact materials. In order to reduce the resistance between the first electrical connection layer 2241 and the first semiconductor layer 2211, a transparent current spreading layer is also added between the first electrical connection layer 2241 and the first semiconductor layer 2211. The second electrical connection layer includes an ohmic contact layer having good electrical connection performance with the second semiconductor layer 2213, such as Cr, Ni, Au, Al, and the like. The material of the second electrical connection layer can be Ag, Au, Ti, Al, Cr, Pt, TiW, Ni, or any combination of the above, wherein Ag, Al are suitable as metal reflective materials, and TiW is suitable as a metal coating material to prevent Metal diffusion, Cr, Ni, Au are suitable for It is an ohmic contact material.

[0045] The first electrode 2221 and the second electrode 2222 are located outside the epitaxial laminate 2210, that is, the projection of the first electrode 2221 and the second electrode 2222 on the surface of the substrate 2230 is outside the area of the epitaxial laminate 2210. The first electrode and the second electrode are led out from the lower surface S12 of the epitaxial laminate 2210 through the electrical connection layer 2240 and face the upper surface S11 of the epitaxial laminate, so as to be suitable for electrically contacting the body of the light emitting diode chip from the positive side. Preferably, the upper surfaces of the first electrode and the second electrode are located at the same height.

[0046] The substrate 2230 is used to support the epitaxial stack 2210, and its thickness is preferably 50 or more and 200 or less. In some embodiments, the thickness of the substrate 2230 may be 50-100 [xm, for example, 90 [xm; in some embodiments, the thickness of the substrate 2230 may also be 100 to 150 1, such as 120 1, or 130 1; In some embodiments, the thickness of the substrate 2230 may also be 150-20Vm, for example, 18Vm. The substrate 2230 preferably uses an insulating material, which may be a transparent material, such as a sapphire substrate, a ceramic substrate, etc., and may also be highly reflective. Material.

[0047] In the above-mentioned light-emitting device, the first electrode and the second electrode are located on the side of the epitaxial stack, which can prevent the first electrode and/or the second electrode from being arranged above the epitaxial stack to shield radiation and reduce Radiation efficiency, and convenient to make wire bonding.

[0048] In some embodiments, the substrate 2230 may be made of a material with good heat dissipation properties, such as a Si substrate, a Cu substrate or a ceramic substrate. At this time, the electrical connection layer 2240 is connected to the heat dissipation substrate 2230 and the second semiconductor layer 2213, respectively. A good heat conduction channel is formed to guide heat from the second type semiconductor layer to the heat dissipation substrate. Since the excitation radiation of the multiple quantum well is emitted through the second semiconductor layer, heat is easily accumulated on the second semiconductor layer 2213, and the electrical connection layer 2242 can well draw the heat from the second semiconductor layer to the heat dissipation substrate.

[0049] FIG. 5 shows the structure of an LED chip 220 used in the light emitting device shown in FIG. 3. In the LED chip, the electrical connection layer 2240 is arranged in multiple layers in the vertical direction, and is electrically isolated by the insulating layer 2260. Specifically, a third electrical connection layer 2244, an insulating layer 2260, a first conductive conductor 2241, and a second electrical connection layer 2242 are sequentially arranged from bottom to top between the substrate 2230 and the epitaxial stack 2210. The third electrical connection layer 2244 It has a first extension portion 2243 and a second extension portion 2245 facing the epitaxial stack. The first extension portion 2243 penetrates the first semiconductor layer 2221 and the active layer 2222, and is electrically connected to the second semiconductor layer 2213 through the opening 2271, The second extension portion 2245 is electrically connected to the second electrical connection layer 2242 through the opening 2272. Preferably, the first electrical connection layer 2241 and the second electrical connection layer 2242 have the same thickness and material, and are patterned in It is formed in the same step, so it can have the same height, which facilitates subsequent production of the first electrode and the second electrode with the same height.

[0050] In a specific embodiment, the portion where the first electrical connection layer 2241 contacts the first electrode 2221, and the portion where the second electrical connection layer 2242 contacts the second electrode 2222 are Ti, Pt, and Au with relatively stable performance. , Cr, Ti W alloy and other materials. The first electrical connection layer 2241 located under the light-emitting area includes a highly reflective metal material (such as Ag, Al, etc.) that sequentially reflects the light emitted from the light-emitting area, and is used to prevent the diffusion of the aforementioned materials. Metal materials (such as Ti, Pt, Au, Cr or TiW, etc.). The third electrical connection layer 2244 includes an extension portion 2243 extending toward the light-emitting surface and connected to the second semiconductor layer 2213, and its material preferably includes reflective materials such as Al, Cr, or Ag. Further, the side of the third electrical connection layer 2244 in contact with the substrate 2230 may include a bonding layer for bonding the substrate. More preferably, the bonding layer is made of a metal material, which can be used as a heat dissipation layer at the same time, so that the heat accumulated on the second semiconductor layer is quickly drawn to the substrate 2230. On the other hand, the substrate 2230 is in contact with the entire surface of the epitaxial laminate, ensuring the integrity of the physical structure.

[0051] In some embodiments, the epitaxial stack 2210 of the LED chip 220 removes the growth substrate to form a thin film structure

At the same time, the first electrical connection layer 2241 may include a reflective layer M1, so the distance D1 from the reflective layer M1 to the light-emitting surface S11 of the LED chip is 1 (within Vm, for example, 4-8 pm, and the distance D3 to the light-emitting layer is: 1 pm Hereinafter, the path of light inside the LED chip is shortened, and the ratio of light emitted from the active layer 2212 from the light-emitting surface S11 is increased. The light-emitting angle is preferably 150° or less, and more preferably, the light-emitting angle is less than or equal to 120. °, such as 120-110°, in a specific embodiment, the light-emitting angle of the LED chip may be 113°, or 115°, or 118°.

[0052] Further, the third electrical connection layer 2244 may include a reflective layer M2, the reflective layer M2 is located on the substrate 2230, and the distance from the light emitting surface S11 is preferably 2 (Vm or less, much less than half of the thickness T of the LED chip, More preferably, it is 7~12 _[ xm, for example, it can be 8 _[ xm, or 9 _[ xm, or _[ xm.

[0053] FIG. 6 shows the structure of an LED chip 220 used in the light emitting device shown in FIG. The difference between the LED chip shown in FIG. 5 is that the third electrical connection layer 2244 includes a plurality of extensions 2243 extending toward the light exit surface, and the plurality of extensions 2243 penetrate the first semiconductor layer 2211, the active layer 2212, and The second semiconductor layer 2213 is connected. The plurality of extensions 2243 are preferably evenly distributed, so that they have better current expandability and heat dissipation characteristics, and are suitable for applications under high current density.

[0054] Preferably, the total contact area between the third electrical connection layer 2244 and the second semiconductor layer 2213 is larger than that of the second semiconductor layer. 1.5% of the area of layer 2213. The contact area between the third electrical connection layer 2243 and the second semiconductor layer 2213 can be designed according to requirements, for example, 2.3%~2.8%, 2.8%~4%, or 4%~6% can be selected. In some embodiments, increasing the direct contact area between the third electrical connection layer 2244 and the second semiconductor layer 2213 can solve the heat dissipation problem of high-power products, such as large-size chips or high-voltage chips.

[0055] In some embodiments, the diameter of the extension 2243 is 15 pm or more. Although ensuring the total contact area of the third electrical connection layer 2244 and the second semiconductor layer 2213 can improve the heat dissipation characteristics, if the diameter of the extension portion 2243 is small, the thinner extension portion 2243 has a thermal resistance exceeding a linear ratio. Therefore, in some embodiments, the diameter of the extension part 2243 is designed to be 32 μm~4 μm, which has better heat dissipation effect. As a preferred embodiment, when the diameter of the extension part 2243 is 34 μm~36 μm, the extension The number of parts 2243 is set to 20-25.

[0056] In some embodiments, the first electrical connection layer 2241 and the second electrical connection layer 2242 adopt the same structural layer, including the metal reflective layer M1, and the side of the third electrical connection layer 2244 close to the epitaxial stack can be Including the metal reflective layer M2, the lower surface S12 of the epitaxial stack 2210 is basically covered by the metal reflective layers M1, M2, and the downward light emitted by the active layer 2212 is directly reflected and will not pass through the substrate to cause part of the light to be absorbed. For example, the first electrical connection layer 2241 and the second electrical connection layer 2242 may include an Ag metal layer as the first reflective layer M1, and the third electrical connection layer 2244 may include an Al metal layer. The layer 2 213 forms an ohmic contact. On the other hand, as the second reflective layer M2, it covers as much as possible the area of the lower surface S 12 of the epitaxial stack that is not covered by the first electrical connection layer 2241 and the second electrical connection layer 2242.

[0057] Preferably, the growth substrate of the LED chip 220 is removed, and a rough surface 2210a may be provided on the light emitting surface S11.

[0058] FIG. 7 simply illustrates a light emitting device implemented according to the present invention. The light-emitting device is provided with at least two reflective layers: M2 and M3, including: a bracket 210, an LED chip 220, and a packaging material layer 230. Wherein, the bracket 210 includes a bottom portion 211 and a wall portion 212, which form a cup structure, the surface of the chip mounting area 2101 may be plated with a reflective layer M3, the LED chip 220 is mounted in the cup through the bonding layer 250, and the packaging material The layer 230 fills the bowl to seal the LED chip 220.

[0059] Specifically, the reflective layer M3 provided on the surface of the support 210 may be a metal reflective layer (such as Ag, Al and other high-reflectivity materials), or an insulating reflective layer (such as DBR), or a reflective adhesive material (such as white glue). ), the thickness is preferably 5 pm or less. The bonding layer 250 is a transparent material, and the light transmittance is preferably 70% or more, more preferably It is more than 80%. The LED chip 220 has a transparent substrate 2230, and the upper surface of the substrate 2230 is provided with a reflective layer M2. The transparent substrate 2230 has a visible light transmittance of more than 80%, preferably more than 90%, and its material can be sapphire, transparent ceramics, glass, and the like.

[0060] In some embodiments, the LED chip may refer to the structure shown in FIG. 4. At this time, the substrate of the LED chip is a transparent substrate, and the first electrical connection layer 2241 may serve as the reflective layer M2. The first electrical connection layer 2241 may be formed by stacking multiple layers, including a highly reflective material layer, for example, a highly reflective metal material such as aluminum. The thickness of the material layer of the highly reflective layer is preferably 50 nm or less.

[0061] The LED chip 220 also adopts the structure shown in FIG. 5 or FIG. 6, wherein the substrate 2230 is made of a transparent material, and the third electrical connection layer 2243 on the upper surface thereof can be used as the light-reflecting layer M2. In some embodiments, the third electrical connection layer 2243 is made of a metal material and has a reflectivity of more than 70%. In this case, it can be directly used as a reflective layer. In some embodiments, the third electrical connection layer 2243 is formed by stacking multiple layers, wherein the side in contact with the substrate 2230 includes a material layer with higher reflection, for example, a highly reflective metal material such as aluminum. The thickness of the material layer is preferably 50 nm or less.

[0062] The size of the substrate of the LED chip 220 shown in FIGS. 4 to 6 is generally larger than that of the epitaxial stack 2210 (the area of its cross-section is greater than that of the epitaxial stack 2210), and the thickness is much larger than that of other structural layers. Thickness, taking a GaN-based LED chip as an example, the thickness of the epitaxial laminate 2210 is generally not more than 10—, for example, it can be 4~8 pm. The electrical connection layer, insulating layer, bonding layer, etc. between the epitaxial laminate 2210 and the substrate 2230 The total thickness of the substrate is generally not more than 5pm, for example, 3~5pm, and the substrate 2230 is usually above 50pm, such as 50 _[ xm, or 100 _[ xm, or 120 _[ xm, or 150 _[ xm, or 180 _[ xm], so The light emitted by the active layer is easily incident on the inside of the substrate 2230 through the reflection of the sidewall of the support or the scattering and reflection of the packaging material layer, and may be absorbed by the metal above the substrate 2230 or the metal on the support. In the light-emitting device shown in FIG. 7, part of the light emitted by the LED chip 220 due to the reflection of the bowl is incident into the transparent substrate 2 230, and the transparent substrate 210 has reflective layers above and below, so the light will be emitted from the other end , Reduce the metal absorption by the bonding layer metal or the metal of the bracket 210, as shown in FIG. 8.

[0063] In some embodiments, the packaging material layer 230 encapsulating the LED chip 220 contains particles 231, and part of the light emitted by the LED chip 220 will be reflected or scattered to the side of the transparent substrate. There is a reflective layer underneath, so light will be emitted from the other end without being absorbed by the bonding layer metal or the metal of the bracket. [0064] In some embodiments, the LED chip is covered with phosphor powder around and above, and part of the light emitted by the LED chip 220 will be reflected or scattered to the side of the transparent substrate, because there are reflective layers on and under the transparent substrate 210 , So the light will be emitted from the other end without being absorbed by the bonding layer metal or the metal of the bracket. Preferably, for the uniformity of the light color of the light-emitting device, the phosphor is covered below the plane where the reflective layer M2 is located. At this time, the transparent substrate 2230 cooperates with the upper and lower reflective layers, which can significantly reduce the reflection or reflection of the light emitted by the LED chip 220. Scattered into the substrate and absorbed.

[0065] FIG. 9 simply illustrates a light emitting device implemented according to the present invention. The light emitting device also has at least two reflective layers M2 and M3, and the adopted LED chip 220 has a transparent substrate 2230. The difference from the light-emitting device shown in FIG. 7 is that the reflective layer M3 under the transparent substrate 2230 is directly formed on the back of the substrate 2230, and its material can be a metal reflective layer (such as Ag, Al, and other high-reflectivity materials), or an insulating reflective layer. Tier (e.g. DB

R).

[0066] FIG. 10 shows the structure of an LED chip 220 used in the light-emitting device shown in FIG. 9, which is basically the same as the LED chip shown in FIG. 5, except that: a transparent substrate 2230 is selected, and the transparent substrate 2230 Reflective layer M3 is provided on the back of the device. In some embodiments, the structure shown in FIG. 4 or FIG. 6 may also be adopted. Similarly, a reflective layer M3 is provided on the back of the substrate 2230 of the LED chip 220 shown in FIG. 4 or FIG.

[0067] FIG. 11 simply illustrates a light emitting device implemented according to the present invention. The light-emitting device includes a bracket 210, an LED chip 220 is mounted on the bracket 210 through a bonding layer 250, a packaging material layer 230 covers the LED chip 220, and the LED chip 220 is sealed on the bracket. The LED chip includes an epitaxial laminate 2210, a substrate 2230, and a bonding layer 2280 connecting the two. A first reflective layer M21 (or M1) and a second reflective layer M22 are provided above and below the bonding layer 2280.

[0068] FIG. 12 shows a structure of an LED chip 220 used in the light-emitting device shown in FIG. 9. From top to bottom, the LED chip includes: an epitaxial stack 2210, a first electrode 2221 / a second electrode 2222, a first electrical connection layer 224 1 / a second electrical connection layer, an insulating layer 2260, a third electrical connection layer 2244, The bonding layer 2280, the reflective layer 2290, and the substrate 2230. The first reflective layer may be the first electrical connection layer 2241 and/or the third electrical connection layer 2244. Preferably, the third electrical connection layer 2244 electrically connects the second semiconductor layer 2213 and the first electrical connection layer 2242 on the one hand, and on the other hand, serves as the first reflective layer M21 and includes reflective materials such as Al, Cr, or Ag. The bonding layer 2280 is used to combine the epitaxial stack 2210 and the substrate 2230, and its material can be a metal material or a non-metal material as required. [0069] In some embodiments, the light-emitting device is applied to a high current density (for example, the current density A/mm ² , which may be 2/111111 ² or 3/111111 ² ), and the bonding layer 2280 preferably uses a metal bonding material At this time, the reflective layer 2290 preferably also uses a highly reflective metal material (such as aluminum, silver and other metals), so that a heat dissipation channel can be formed, which is beneficial to pass the heat accumulated on the second semiconductor layer 2213 through the third conductive layer 2244 and the bonding layer. 2280, the reflective layer 2290, and the substrate 2230 are led to the support 210 and led out from the support 210. In some embodiments, the bonding layer 2280 of the light-emitting device may also be an insulating layer. In this case, the reflective layer 2290 may be a metal reflective layer or an insulating reflective layer.

[0070] FIG. 13 shows the structure of an LED chip 220 used in the light emitting device shown in FIG. The difference from the structure of the LE D chip shown in FIG. 12 is that the sidewall 2281 of the bonding layer 2280 is covered with a reflective layer. In the light-emitting device mounted with the LED chip 220, the light emitted by the LED chip 220 is reflected by the side wall of the bracket 210 or reflected and/or scattered by the packaging material layer 230, and is incident on the bonding layer 2280, and is covered on the side wall of the bonding layer The reflective layer of 2281 reflects directly to prevent light from entering and entering the interior 2280 of the bonding layer.

[0071] FIG. 14 simply illustrates a light emitting device implemented according to the present invention. The difference from the light-emitting device shown in FIG. 11 is that a reflective layer 260 is provided on the surface of the chip mounting area 2101 of the bracket 210, and the LED chip 220 is mounted on the reflective layer 260 through the bonding layer 250. The substrate 2230 is made of a transparent material. The light transmittance of is preferably 70% or more. The structure of the LED chip can refer to the structure shown in Figures 12 and 13.

[0072] In the light-emitting device, at least three reflective layers are included: a first reflective layer, a second reflective layer M22, and a third reflective layer M3. The first reflective layer is disposed above the bonding layer 2280 and may be M1. Or M21, which is mainly used to directly reflect the light emitted downward from the active layer of the LED chip, and the distance between it and the light-emitting surface S11 of the LED chip is l (below Vm, for example, 4~8 pm, and the second reflective layer M22 is provided The distance between the bonding layer 2280 and the transparent substrate 2230 and the light-emitting surface S11 of the LED chip is 20—below, for example, 7~10 μm, or 10~15 pm, and the third reflective layer M3 is disposed on the transparent substrate 2230 and The distance between the brackets 210 and the light-emitting surface S11 of L is more than 50 pm. The second reflective layer M22, the third reflective layer M3 and the transparent substrate 2230 form a light transmission channel. The light emitted by the LED chip 220 is due to the side wall of the bracket 210 Part of the light caused by the reflection is incident into the transparent substrate 2230, and the light will be emitted from the other end of the transparent substrate 2230, reducing absorption by the bonding layer 2280 or the bracket 210.

[0073] FIG. 15 simply illustrates a light emitting device implemented according to the present invention. The light-emitting device also includes at least three reflective layers, a first reflective layer, a second reflective layer M22, and a third reflective layer M3, which are similar to the light-emitting device shown in FIG. The difference is that the third reflective layer M3 is located between the bonding layer 250 and the transparent substrate 2230. FIG. 16 shows the structure of an LED chip 220 used in the light emitting device shown in FIG. 15, and the third reflective layer M3 is formed on the back surface of the transparent substrate 2230.

[0074] FIG. 17 simply illustrates a light emitting device implemented according to the present invention. The difference from the light-emitting device shown in FIG. 11 is that the LED chip 220 of the light-emitting device has a reflective substrate 2230, the reflectivity is preferably more than 90%, and can be white ceramic, and the bonding layer 250 for fixing the LED chip 220 is preferably a reflective material The reflectivity is preferably above 80%, and it can be a white solid crystal glue. For the specific structure of the LED chip 220, refer to the structure shown in FIG. 5 or FIG. 6. The substrate 2230 is a reflective substrate, and the side of the third electrical connection layer 2244 adjacent to the substrate includes a bonding layer 2280. The reflective layer M1 and/or M21 is arranged above the bonding layer 2280, so the downward light emitted by the active layer is directly reflected, and part of the light will not be absorbed by the bonding layer. At the same time, part of the light emitted by the LED chip 220 of the light-emitting device irradiates the surface of the reflective substrate 2230 due to the reflection of the side wall of the support, and can be directly reflected to reduce the light absorption of the substrate 2230 or the support 210.

[0075] In some embodiments, the encapsulation material layer 230 encapsulating the LED chip 220 contains particles 231, and part of the light emitted by the LED chip 220 will be reflected or scattered, hit the side of the reflective substrate 2230, and be directly reflected.

[0076] In some embodiments, the LED chip is covered with phosphor powder around and above, and part of the light emitted by the LED chip 220 will be reflected or scattered to the side of the reflective substrate and be directly reflected.

[0077] FIG. 18 simply illustrates a modification of the light emitting device shown in FIG. 17. The substrate of the LED chip 220 of the light-emitting device is not limited to the reflective substrate, and it can be a transparent substrate (such as a sapphire substrate, a glass substrate, etc.) or a light-absorbing substrate (such as a silicon substrate, etc.), and a reflective layer 2231 is formed on the sidewall of the substrate.

[0078] FIG. 19 simply illustrates a light emitting device implemented according to the present invention. The same parts as the light-emitting device shown in FIG. 3 will not be repeated here. The difference is that a reflective material layer 231 is provided under the packaging material layer 230, which surrounds the outer side surface S13 of the LED chip 220, but does not cover the LED chip的光出surface S11. The reflective material can be silicone, epoxy, or a silicone-epoxide mixed material, such as white glue. Preferably, the upper surface S21 of the reflective material layer 231 is preferably not lower than the upper surface S14 of the substrate 2230 of the LED chip.

[0079] In the light-emitting device shown in FIG. 3, the thickness of the LED chip 220 mainly depends on the thickness of the substrate 2230. The thickness of the substrate is generally more than 50, such as 10 μm. Therefore, when the light-emitting device is working, the LED chip 220 emits light. When the light enters the packaging material layer 230, part of the light is reflected or scattered, and it is easy to escape from the substrate 2230 The side is incident on the inside of the substrate, and absorbed by the inside of the substrate, bracket or LED chip. The light-emitting device shown in FIG. 19 is filled with a reflective material layer 231 between the packaging material layer and the bracket around the LED chip. The reflective material layer 231 is not lower than the upper surface S14 of the substrate 2230, so it can effectively prevent the light emitted by the LED chip from being emitted. After entering the packaging material layer 230, it is reflected or scattered into the substrate 2230.

[0080] In some embodiments, the distance H1 between the upper surface S21 of the reflective material layer and the light-emitting surface S11 of the LED chip is preferably within 20 pm, and more preferably within 1 (Vm). In a specific embodiment, the reflective material The material layer 231 surrounds the LED core 220 to reach the upper surface S14 of the substrate 2230. In some embodiments, the reflective material layer 231 surrounds the LED core 220 and reaches to cover the electrodes of the LED chip, as shown in Figure 20. In some implementations In an example, the reflective material layer 231 surrounds the LED core 220 until it is flush with the upper surface of the LED chip, as shown in FIG. 21.

[0081] FIG. 22 simply illustrates a light emitting device implemented according to the present invention. The difference from the light-emitting device shown in FIG. 3 is that the support 210 of the light-emitting device does not have a cup structure, such as a flat plate structure, and the packaging material layer 230 covers the LED chips and leads. In some preferred embodiments, the packaging material layer 230 corresponds to the lens structure 232 formed above the LED chip 220. The lens structure 232 and the packaging material layer 230 can be made of the same material or different materials.

[0082] FIG. 23 simply illustrates a light emitting device implemented according to the present invention. The difference from the light-emitting device shown in FIG. 22 is that a reflective material 231 surrounding the LED chip 220 is provided between the bracket 210 and the packaging material layer 230. The reflective material 231 may be flush with the light-emitting surface S11 of the LED chip, or lower than The light-emitting surface S11.

[0083] FIGS. 24 and 25 schematically illustrate a light emitting device implemented according to the present invention. The light-emitting device includes a bracket 210, at least two LED chips 220 mounted on the bracket, and a packaging material layer (not shown in the figure).

[0084] In the light-emitting device, a plurality of LED chips 220 are installed in the same bracket 210, and there is a problem of blocking light between adjacent LED chips 220. Define OL as the overlapping length of two adjacent LED chips 220, L is the length of the LED chip, W is the width of the LED chip, P is the perimeter of the LED chip 220, that is, 2x(L+W), T is the The thickness of the LED chip 220, G is the distance between adjacent LED chips 220, the light blocking between the LED chips is mainly related to the thickness T of the chip, the gap G between the chips, and the overlapping length of the adjacent LED chips Specifically: It is proportional to the thickness T of the LED chip, inversely proportional to the gap G between the LED chips, and proportional to the ratio of the area overlapping adjacent LED chips to the total area of the side surface of the chip (OL/P) , Therefore define the light blocking factors F1 and F2, where FlcxT/G, F2cxOL/P, define the light blocking coefficient as 11= The greater the FlxF2, R, the greater the influence of the side light blocking between the LED chips. In this embodiment, the light-emitting device uses the LED chip shown in FIG. 5 or 6, which has a reflective layer M1 or M21 between the epitaxial laminate 2210 and the substrate 2230, and the reflective layer reaches the light-emitting surface S11 of the LED chip. The distance D1 can reach l(Vm or less, and the distance D2 to the active layer can reach 5— or less. Therefore, the light-emitting angle of the LED chip is small, preferably equal to or less than 120°, for example, 110~120°, the active layer The light emitted by 2212 is mainly emitted from the light-emitting surface S11, so the side light blocking between the LED chips has little effect. The distance G between adjacent chips can be 15 Vm, preferably 50~12 Vm, which can take into account the blocking Light influence and package size, correspondingly, the light blocking coefficient R is preferably a value above 0.2, which can make full use of space, and at the same time, reduce the package size or increase the chip size under the same package size under the same light effect. Therefore, the light efficiency is improved. Preferably, the light blocking coefficient R is preferably 0.2-2.

[0085] In one embodiment, the dimensions of the LED chips are as follows: the length L is HXXVm, the width W is 50 (Vm, the height T is 150—, and the overlapping length OL between adjacent LED chips is 50 (Vm, spacing G is 100—, then R=0.25. In another embodiment, the size of the LED chip remains unchanged, the overlap length OL between adjacent LED chips is 100 (Vm, and the spacing G is 10 (Vm, then R= 0.5. In another embodiment, the size of the LED chip is unchanged, the overlap length OL is 100 (Vm, the spacing G is 50—, then R=1.

[0086] In some specific implementations, a wavelength conversion layer may be provided as required, and the wavelength conversion layer may directly incorporate phosphor into the packaging material layer or adopt a wavelength conversion sheet. Preferably, the wavelength conversion layer is formed above the plane where the upper surface of the LED chip is located. Preferably, the wavelength conversion layer is only provided on the light-emitting surface of the LED chip.

[0087] FIG. 26 simply shows a light-emitting device. The difference from the light-emitting device shown in FIG. 24 is that the light-emitting device includes a bracket and at least three LED chips located on the bracket, and the multiple LED chips emit different spectra. For example, three lights of red, blue and green are emitted respectively, and the support can be a flat structure or a bowl structure. L m) The chip can be any of the LED chips shown in Figures 4-6.

[0088] In some embodiments, the light-emitting device requires a high current density of 4 A/mm ² or even 5 A/mm ^2. For example, the LED chip shown in FIG. 6 is preferably used at this time. Specifically, the substrate 2230 preferably adopts an insulating substrate with good heat dissipation, such as a ceramic substrate, which can realize a thermoelectric separation structure, provides a good foundation for high current density driving, and can quickly guide the heat generated by the epitaxial stack to the support Derive; further, the light-emitting angle of the LED chip is less than or equal to 120°, for example, 120 to 110°, under the condition that the light effect remains unchanged, It can effectively reduce the package size, or increase the chip area under the same package size. In one embodiment, the light emitting device is applied to a stage light, and includes four LED chips A, B, C, and D, which emit white light, red light, blue light, and green light, respectively. Among them, the light emitting surface of the white light LED chip is coated with phosphor powder for emitting white light. The spacing between each LED chip is 50 to 150 microns.

[0089] The above are only the preferred embodiments of the present invention. It should be noted that for those skilled in the art, without departing from the principle of the present invention, several improvements and modifications can be made, and these improvements and modifications are also It should be regarded as the protection scope of the present invention.

Claims

[Claim 1] A light emitting device, comprising:

A bracket having a mounting surface for mounting the light-emitting diode chip, and a first wire bonding area and a second wire bonding area, the first wire bonding area and the second wire bonding area are electrically isolated from each other;

The LED chip is mounted on the mounting surface of the bracket and includes a substrate, and a first electrode, a second electrode, and an epitaxial stack on the substrate, the epitaxial stack having opposite upper and lower surfaces;

A layer of packaging material for sealing the LED chip on the bracket;

It is characterized in that: the first electrode and the second electrode are formed on the substrate and located outside the epitaxial laminate, on the one hand they are electrically connected to the lower surface of the epitaxial laminate, and on the other hand through The leads are respectively connected to the first wire bonding area and the second wire bonding area of the bracket.

[Claim 2] A light emitting device, comprising:

The LED chip is mounted on the mounting surface of the bracket and includes a substrate, and a first electrode, a second electrode, an electrical connection layer, and an epitaxial laminate on the substrate, the epitaxial laminate having opposite upper and lower surfaces;

A layer of packaging material for sealing the LED chip on the bracket;

It is characterized in that: the first electrode and the second electrode are led out from the lower surface of the epitaxial laminate through the electrical connection layer on the one hand, and face the upper surface of the epitaxial laminate; The first wire bonding area and the second wire bonding area of the bracket.

[Claim 3] The light-emitting device according to claim 1 or 2, characterized in that: the growth substrate is removed from the epitaxial stack, and the upper surface of the epitaxial stack is the light-emitting surface, which includes the first semiconductor layer, Source layer and second semiconductor layer.

[Claim 4] The light-emitting device of claim 3, wherein the LED chip further comprises a first electrical connection and a second electrical connection layer, wherein the first electrical connection layer is electrically connected to the first semiconductor layer and The first electrode and the second electrical connection layer are electrically connected to the second semiconductor layer and the second electrode.

[Claim 5] The light-emitting device according to claim 4, wherein: the first electrical connection layer includes Includes a reflective layer.

[Claim 6] The light-emitting device according to claim 4, further comprising a third electrical connection layer, which is located below the first and second electrical connection layers, and has at least one first extension and a first Two extension parts, wherein the first extension part penetrates the first semiconductor layer and the active layer and is in contact with the second semiconductor layer, and the second extension part is in contact with the second electrical connection layer.

[Claim 7] The light-emitting device of claim 6, wherein the third electrical connection layer includes a reflective layer and a bonding layer.

[Claim 8] The light-emitting device according to claim 6, characterized in that: the first and second electrical connection layers have the same structural layer and thickness.

[Claim 9] The light-emitting device according to claim 6, characterized in that: when the light-emitting device is working, the third electrical connection layer and the substrate form a heat dissipation channel to guide the heat accumulated in the second semiconductor layer To the bracket and export.

[Claim 10] The light-emitting device according to claim 1 or 2, characterized in that: the bracket has a groove structure, the LED chip is located in the groove, and the packaging material layer simultaneously covers the The upper and side surfaces of the LED chip.

[Claim 11] The light-emitting device according to claim 1 or 2, characterized in that: the epitaxial stack includes an n-type semiconductor layer, an active layer, and a p-type semiconductor layer in order from top to bottom.

[Claim 12] The light-emitting device of claim 1 or 2, wherein the LED chip further comprises a first reflective layer provided between the epitaxial laminate and the substrate.

[Claim 13] The light-emitting device according to claim 12, wherein the upper surface of the LED chip is a light-emitting surface, and the distance between the first reflective layer and the light-emitting surface of the LED chip is 20 _[ xm or less.

[Claim 14] The light emitting device of claim 13, wherein the distance between the first reflective layer and the light-emitting surface of the LED chip is 4-8 pm.

[Claim 15] The light-emitting device of claim 12, wherein: the epitaxial stack includes a first semiconductor layer, an active layer, and a second semiconductor layer, and the first reflective layer and the active layer The distance between the layers is less than 5pm.

[Claim 16] The light-emitting device of claim 15, wherein: the first reflective layer and the The distance between the active layers is: Lpm or less.

[Claim 17] The light-emitting device of claim 12, further comprising a second reflective layer provided between the first reflective layer and the substrate.

[Claim 18] The light-emitting device of claim 17, wherein the LED chip further comprises a bonding layer provided between the second reflective layer and the substrate.

[Claim 19] The light-emitting device of claim 18, further comprising a third reflective layer, which is located between the bonding layer and the substrate.

[Claim 20] The light-emitting device of claim 17, wherein the LED chip further comprises a bonding layer provided between the first reflective layer and the second reflective layer.

[Claim 21] The light-emitting device of claim 12, wherein: a bonding layer of a metal material is provided between the first reflective layer and the substrate.

[Claim 22] The light-emitting device according to claim 21, wherein a reflective layer is provided on both the upper and lower sides of the bonding layer.

[Claim 23] The light-emitting device according to claim 1 or 2, characterized in that: a first reflective layer is provided between the epitaxial laminate and the substrate, and a first reflective layer is provided between the substrate and the support. The second reflective layer.

[Claim 24] The light-emitting device of claim 23, wherein: the upper surface of the LED chip is a light-emitting surface, and the distance between the first reflective layer and the light-emitting surface of the LED chip is 1 (Vm or less).

[Claim 25] The light-emitting device according to claim 1 or 2, wherein the substrate is a transparent substrate, a first reflective layer is provided above the transparent substrate, and a second reflective layer is provided below the transparent substrate. The light emitted by the LED chip enters the packaging material layer, part of the light is reflected or scattered and then enters the transparent substrate, and is reflected by the first and second reflective layers and then exits the substrate.

[Claim 26] The light-emitting device according to claim 25, wherein the packaging material layer covers the upper surface and side surfaces of the LED chip, and the packaging material layer above the LED chip contains phosphor.

[Claim 27] The light-emitting device of claim 26, wherein: the portion of the packaging material layer surrounding the side surface of the LED chip contains phosphor.

[Claim 28] The light-emitting device of claim 1 or 2, wherein the substrate is a highly reflective substrate with a reflectivity of 90% or more.

[Claim 29] The light-emitting device according to claim 1 or 2, further comprising a reflective adhesive, the reflective adhesive is located between the bracket and the packaging material layer and surrounds the LED chip

[Claim 30] The light-emitting device of claim 29, wherein: the reflective glue surrounds the L

The periphery of the ED core reaches until it reaches the upper surface of the substrate, or is higher than the plane where the upper surface of the substrate is located.

[Claim 31] The light-emitting device of claim 30, wherein the reflective glue completely covers the side surface of the LED core, and exposes the upper surface of the epitaxial laminate.

[Claim 32] The light emitting device according to claim 1 or 2, characterized in that: the light emitting angle of the light emitting device is less than or equal to 120°.

[Claim 33] The light-emitting device according to claim 1 or 2, characterized in that: the light-emitting angle of the LED chip is 110-120°.