WO2020151613A1

WO2020151613A1 - Semiconductor processing device and method for detecting workpiece in semiconductor process

Info

Publication number: WO2020151613A1
Application number: PCT/CN2020/072942
Authority: WO
Inventors: 李新颖; 武学伟; 刘玉杰; 董博宇; 文莉辉; 武树波; 杨依龙; 郭冰亮; 宋玲彦; 李丽; 赵晨光; 马迎功; 杨建�; 张楠; 胡新乐; 张家昊; 陈玉静; 张璐; 翟洪涛; 甄梓杨
Original assignee: 北京北方华创微电子装备有限公司
Priority date: 2019-01-23
Filing date: 2020-01-19
Publication date: 2020-07-30
Also published as: CN109811323A; TW202029383A; TWI706498B; CN109811323B; KR102435936B1; KR20210107068A

Abstract

A semiconductor processing device, comprising: a cavity (5) provided with a base (6) for bearing a processed workpiece (7); a sensor (11) having a transmitting end and a receiving end which are provided at both sides of the base (6) oppositely; the transmitting end being used for sending a transmission signal to the receiving end along the direction parallel to a bearing surface of the base (6); and a control component used for receiving the transmission signal sent by the transmitting end, and a receiving signal received by the receiving end, comparing the transmission signal with the receiving signal, and determining, according to the comparison result, the state of the processed workpiece (7) on the base (6). Also disclosed is a method for detecting a workpiece in a semiconductor process.

Description

Semiconductor processing equipment and workpiece detection method in semiconductor process

Technical field

The invention relates to the technical field of semiconductor processing, in particular to a semiconductor processing equipment and a method for detecting a workpiece in a semiconductor process.

Background technique

The preparation of AlN thin films by magnetron sputtering is currently the most commonly used method in the industry. A typical magnetron sputtering device includes a reaction chamber, in which a susceptor with a heating device is arranged, and a target is arranged above the susceptor. During the thin film deposition process, first use the robot and thimble to place the tray on the susceptor, then raise the susceptor to the process position, and pass N ₂ , Ar, O ₂ and other reactive gases into the reaction chamber. And by loading the sputtering power to the target material to excite the reaction gas to form a plasma, the particles in the plasma bombard the target material to make the target material sputter out of the target material and deposit on the tray, thereby realizing the AlN film Of deposition.

In the prior art, in the process of transferring trays, there may be situations where there is no tray on the support column, the tray is tilted, or the tray is damaged. If these conditions cannot be discovered in time before the sputtering process, the metal plating may occur. Problems with accessories such as lamps have caused irreversible losses and require a long recovery time, affecting production capacity.

Summary of the invention

In view of this, embodiments of the present invention provide a semiconductor processing equipment and a method for detecting a workpiece in a semiconductor process to solve the technical problem that the state of a processed workpiece in a cavity cannot be detected during the semiconductor process.

In a first aspect, an embodiment of the present invention provides a semiconductor processing equipment, the semiconductor processing equipment includes:

A chamber, in which is provided a base for carrying the workpiece to be processed;

A sensor, the sensor has a transmitting end and a receiving end, the transmitting end and the receiving end are disposed oppositely on both sides of the base, and the transmitting end is used to face in a direction parallel to the bearing surface of the base The receiving end sends out a transmission signal; and

The control component is configured to receive the transmission signal sent by the transmission end and the reception signal received by the reception end, and compare the transmission signal with the reception signal, and compare The structure judges the state of the workpiece on the base.

Further, one of the sensor and the base can move in a direction perpendicular to the bearing surface, and the other is fixed relative to the chamber.

Further, the sensor is fixed relative to the chamber, and the base can move between the transmission position and the process position; and the transmitting position of the transmitting end and the receiving position of the receiving end are both located in the Between the transfer location and the process location.

Further, the side wall of the chamber includes a first side wall and a second side wall disposed oppositely, and a third side wall and a fourth side wall disposed oppositely adjacent to the two, wherein the emitting The transmitting position of the end and the receiving position of the receiving end are relatively arranged on the first side wall and the second side wall; the chamber also includes a film transfer port for passing in the workpiece to be processed, and the film transfer port is set on the On the third side wall or the fourth side wall.

Further, the control component is configured to obtain, according to the comparison result, the blocking time of the transmitted signal during the movement of one of the sensor and the base, and to compare the blocking time with a preset detection threshold. Comparing, and judging the state of the workpiece on the base according to the comparison result of the blocking time and a preset detection threshold.

Further, the detection range of the transmitted signal in the direction perpendicular to the bearing surface matches the thickness of the workpiece.

Further, the transmission signal deviates from the center of the bearing surface.

Further, a plurality of support columns arranged at intervals along the circumference thereof are provided on the base, and the support ends of the plurality of support columns constitute the bearing surface.

Further, the semiconductor processing equipment is a magnetron sputtering equipment.

In a second aspect, an embodiment of the present invention provides a workpiece detection method in a semiconductor process. The workpiece detection method adopts the above-mentioned semiconductor processing equipment provided by the present invention and includes:

Transferring the processed workpiece into the chamber and placing it on the bearing surface of the base at the transfer position;

Sending a transmitting signal to the receiving end of the sensor through the transmitting end of the sensor in a direction parallel to the bearing surface of the base;

The transmitted signal and the received signal are compared, and the state of the processed workpiece on the base is determined according to the comparison result.

Further, the workpiece detection method uses the above-mentioned semiconductor processing equipment provided by the present invention; the transmitting end of the sensor sends a transmitting signal to the receiving end of the sensor in a direction parallel to the bearing surface of the base The steps include:

The base is moved from the transmission position to the process position, and during the movement, the transmitting end of the sensor sends out to the receiving end of the sensor in a direction parallel to the bearing surface of the base transmit a signal.

Further, the step of comparing the transmitted signal with the received signal, and judging the state of the workpiece on the base according to the comparison result, includes:

Comparing the transmitting signal and the receiving signal, and obtaining the blocking time of the transmitting signal in the process of the base moving from the transmission position to the process position according to the comparison result;

The blocking time is compared with a preset detection threshold, and the state of the processed workpiece on the base is determined according to the comparison result of the blocking time and the preset detection threshold.

Further, the comparing the blocking time with a preset detection threshold, and judging the state of the workpiece on the base according to the comparison result of the blocking time with the preset detection threshold, includes:

If the blocking time matches the preset detection threshold, it is determined that the workpiece to be processed is horizontally located on the bearing surface;

If the blocking time is greater than the preset detection threshold, it is determined that the state of the processed workpiece is abnormal;

If the blocking time is less than the preset detection threshold, it is determined that there is no workpiece to be processed on the bearing surface.

In the technical solution of the semiconductor processing equipment and the workpiece detection method in the semiconductor process provided by the embodiment of the present invention, a sensor is provided in the chamber, and the transmitting end of the sensor is used to face the receiving end in a direction parallel to the bearing surface of the base Send out a transmitting signal; also includes a control component, which is used to receive the transmitted signal from the transmitting end and the received signal received by the receiving end, compare the transmitted signal and the received signal, and judge the workpiece on the base according to the comparison result status. With the aid of the above-mentioned sensors and control components, it is possible to discover in time that there are no workpieces, tilts or damages on the bearing surface before the semiconductor process, so as to avoid losses to other accessories.

Description of the drawings

In order to explain the embodiments of the present invention or the technical solutions in the prior art more clearly, the following will briefly introduce the drawings that need to be used in the description of the embodiments or the prior art. Obviously, the drawings in the following description These are some embodiments of the present invention. For those of ordinary skill in the art, other drawings can be obtained based on these drawings without creative work.

FIG. 1 is a schematic diagram of the overall structure of a semiconductor processing equipment provided by an embodiment of the present invention;

2 is a schematic diagram of the workpiece to be processed on the support column of the base in the embodiment of the present invention;

Fig. 3 is a schematic diagram of a tilted workpiece in an embodiment of the present invention;

Fig. 4 is a schematic diagram of damage to a processed workpiece in an embodiment of the present invention;

5 is a cross-sectional view of a semiconductor processing equipment provided by an embodiment of the present invention;

FIG. 6 is a schematic flowchart of a method for detecting a workpiece in a semiconductor process according to an embodiment of the present invention.

detailed description

In order to make the objectives, technical solutions, and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be described clearly and completely in conjunction with the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments It is a part of the embodiments of the present invention, not all the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative work shall fall within the protection scope of the present invention.

The terms used in the embodiments of the present invention are only for the purpose of describing specific embodiments, and are not intended to limit the present invention. The singular forms of "a", "the" and "the" used in the embodiments of the present invention and the appended claims are also intended to include plural forms, unless the context clearly indicates other meanings, "multiple" Generally, at least two are included, but the inclusion of at least one is not excluded.

It should be understood that the term "and/or" used in this text is only an association relationship describing associated objects, indicating that there can be three types of relationships. For example, A and/or B can mean that there is A alone, and both A and B, there are three cases of B alone. In addition, the character "/" in this text generally indicates that the associated objects before and after are in an "or" relationship.

Depending on the context, the words "if" and "if" as used herein can be interpreted as "when" or "when" or "in response to determination" or "in response to detection". Similarly, depending on the context, the phrase "if determined" or "if detected (statement or event)" can be interpreted as "when determined" or "in response to determination" or "when detected (statement or event) )" or "in response to detection (statement or event)".

It should also be noted that the terms "include", "include" or any other variants thereof are intended to cover non-exclusive inclusion, so that a commodity or system including a series of elements not only includes those elements, but also includes those elements that are not explicitly listed Other elements of, or also include elements inherent to this commodity or system. If there are no more restrictions, the element defined by the sentence "including a..." does not exclude the existence of other identical elements in the commodity or system that includes the element.

In addition, the sequence of steps in the following method embodiments is only an example, and is not strictly limited.

FIG. 1 is a schematic diagram of the overall structure of a semiconductor processing equipment provided by an embodiment of the present invention. The semiconductor processing equipment is, for example, a magnetron sputtering equipment. The semiconductor processing equipment includes a chamber 5, a sensor 11, and a control component (not shown in the figure). The chamber 5 is provided with a base 6 for supporting the workpiece 7 to be processed. In this embodiment, the workpiece 7 to be processed is a tray for carrying multiple wafers. Of course, in practical applications, the workpiece 7 to be processed can also be wafers or other materials or carriers that need to be transported.

In this embodiment, as shown in FIG. 2, a plurality of support columns 8 arranged at intervals along the circumference of the base 6 are provided, and the support ends of the plurality of support columns 8 constitute a bearing surface. It should be noted that the circumferential size of the supporting ends of the multiple support columns 8 should be smaller than the size of the workpiece 7 to be processed, so as to be able to support the workpiece 7 to be processed. In order to make the workpiece 7 to be processed can receive as much as possible the irradiation of the heat light source installed on the base 6, the number of support pillars 8 should be reduced as much as possible, but it is also necessary to pay attention to ensure that these support pillars 8 can stably support the Processing workpiece 7. Optionally, the support column 8 is a detachable component so that it can be disassembled or replaced according to actual needs.

In this embodiment, as shown in FIGS. 1 and 5, the side wall of the chamber 5 is a cube-like structure composed of a first side wall, a second side wall, a third side wall, and a fourth side wall. , The first side wall and the second side wall are two opposite side walls, the third side wall and the fourth side wall are two opposite side walls, and the third side wall and the fourth side wall are respectively opposite to the first side The wall is adjacent to the second side wall. Wherein, the sensor 11 includes a through-beam sensor, which has a transmitting end and a receiving end, which are arranged on the first side wall and the second side wall of the chamber 5 oppositely. In addition, a film transfer port 4 is provided on the third side wall or the fourth side wall of the cavity 5. In this way, when performing a semiconductor processing process such as magnetron sputtering, the workpiece 7 to be processed can be put into the chamber 5 through the transfer port 4 by a robot, and placed on the support column 8 on the base 6, and When the workpiece 7 to be processed is put into the chamber 5 through the film transfer port 4, the workpiece 7 to be processed can be located between the transmitting end and the receiving end of the sensor 11.

Specifically, the transmitting end of the sensor 11 is used to send a transmitting signal to the receiving end in a direction parallel to the bearing surface of the base 6. Optionally, the emission signal is an optical signal. The control component is used to receive the transmitted signal sent from the sensor 11 and the received signal from the transmitter and the received signal received by the receiver, and compare the transmitted signal with the received signal, and judge the base 6 according to the comparison result. The state of the workpiece 7 to be processed. The control component can be integrated in the semiconductor processing equipment, or can also be integrated on a remote computer or host connected to the semiconductor processing equipment.

Optionally, the transmitted signal deviates from the center of the bearing surface. In this way, the transmitted signal can be prevented from interfering with other sensors or components installed around it.

In this embodiment, one of the sensor 11 and the base 6 can move in a direction perpendicular to the bearing surface, and the other is fixed relative to the chamber 5. In this way, during the movement of one of the sensor 11 and the base 6, by comparing the transmitting signal sent by the transmitting end of the sensor 11 with the receiving signal received by the receiving end, it can be obtained that the transmitting signal is blocked within the moving range. Case. Specifically, due to different states of the processed workpiece 7, the size of the range in the direction perpendicular to the bearing surface is also different, that is, the degree of shielding of the transmitted signal during the movement is different, and the base 6 can be identified by this. The state of the workpiece 7 to be processed.

In this embodiment, the transmitting end and the receiving end of the sensor 11 are arranged on the first side wall and the second side wall of the chamber 5 oppositely. Therefore, the sensor 11 can be fixed relative to the chamber 5, and the base 6 A lifting mechanism is provided at the lower part of the, and the base 6 can be moved between the transmission position and the process position under the driving of the lifting mechanism. In this case, the transmitting position of the transmitting end and the receiving position of the receiving end of the sensor 11 are relatively arranged on the first side wall and the second side wall of the chamber 5, and both are located between the above-mentioned transmission position and the process position to ensure The workpiece 7 to be processed can pass through the detection range of the emitted signal during the movement. In practical applications, the sensor 11 can also be arranged at other positions except the side wall of the chamber 5 as long as it can be fixed relative to the chamber 5. Alternatively, the sensor 11 can be moved up and down relative to the chamber 5, and the base 6 can be fixed relative to the chamber.

Optionally, the above-mentioned control component may compare the transmitted signal sent by the transmitter of the sensor 11 with the received signal received by the receiver, and obtain the shielding time of the transmitted signal during the movement of the base 6 according to the comparison result, and change The blocking time is compared with the preset detection threshold, and then the state of the processed workpiece is determined according to the comparison result of the blocking time and the preset detection threshold. Specifically, because the processed workpiece 7 in different states has different shielding times for the transmission signal, for example, as shown in FIG. 2, the processed workpiece 7 in the normal state is in a state of being placed horizontally (parallel to the bearing surface). In this case, the workpiece 7 to be processed can only begin to block the emission signal when it moves to the emission position of the transmitter end of the sensor 11. Therefore, the blocking time of the emission signal is the shortest, assuming that the blocking time obtained by detection in this state is t1. As shown in Figure 3, when the workpiece 7 to be processed is tilted, it is obvious that the shielding time of the transmitted signal in this state is longer than the shielding time of the transmitted signal in the normal state shown in Figure 2, assuming that the shielding time detected in this state is t2. As shown in FIG. 4, when the workpiece 7 to be processed is damaged or deformed, the workpiece 7 to be processed may not be able to block the transmission signal in this state, and the blocking time obtained by the detection at this time is zero. Assuming that the preset detection threshold t is the blocking time of the transmitted signal when the workpiece 7 is in the normal state shown in FIG. 2, it can be inferred that t1 is equal to t, and t2 is greater than t. The control component compares the blocking time with the preset detection threshold. If the comparison result shows that the blocking time is 0, which is less than t, or the blocking time is greater than t, it can be determined that the state of the processed workpiece 7 is abnormal.

Of course, in practical applications, the control component can also adopt any other method to determine the state of the workpiece to be processed. For example, the control component can also combine the transmitted signal sent by the transmitter of the sensor 11 with the received signal received by the receiver. Compare and obtain the corresponding relationship between the shielded condition of the transmitted signal and the moving height of the base 6 according to the comparison result, and obtain the shielded size of the transmitted signal based on this, and compare the shielded size with the thickness of the workpiece Compare, and then judge the state of the processed workpiece according to the comparison result. The above-mentioned shielded size refers to the range size of the workpiece 7 to be processed in the direction perpendicular to the bearing surface, and the range size is also the range size in which the transmitted signal is shielded in the direction perpendicular to the bearing surface. For example, as shown in FIG. 2, if the workpiece 7 to be processed is placed horizontally on the supporting end of the support column 8, the above-mentioned shielded size is the thickness h of the workpiece 7 to be processed. As shown in FIG. 3, if the workpiece 7 to be processed is inclined on the support column 8, the above-mentioned shielded size is the range dimension H of the workpiece 7 to be processed in the direction perpendicular to the bearing surface. As shown in Figure 4, if the workpiece 7 to be processed is not on the support column 8 due to damage, the sensor 11 may not be within the detection range of the sensor 11, or the sensor 11 may not be detected in the area above the support end of the support column 8. Existence range of the processed workpiece 7.

In this embodiment, the detection range of the transmitted signal in the direction perpendicular to the bearing surface matches the thickness of the workpiece 7 to be processed. In this way, when the workpiece 7 to be processed moves to the height of the transmitter position of the sensor 11, if the workpiece 7 to be processed is in the horizontal state as shown in FIG. 2, it can completely block the transmitted signal, and the workpiece to be processed in other states 7 Only part of the transmission signal can be blocked, so that the presence, inclination and damage of the processed workpiece can be judged according to the change of the blocking degree. The matching mentioned here is the detection range and function of the sensor, which can realize the detection of workpieces of different thicknesses.

In one or more embodiments of the present invention, the chamber 5 further includes: a heating lamp tube 9 installed on the base 6; a plurality of heating lamp tubes 9 are evenly arranged on the upper surface of the base 6 to face The workpiece placed on the support column 8 radiates heat. It can be seen from FIG. 5 that a plurality of heating lamps 9 are uniformly arranged on the upper surface of the base 6 to achieve uniform heating of the workpiece 7 to be processed. In practical applications, the power of the heating lamp tube 9 can be set to a fixed power, or it can be automatically adjustable to meet different process requirements.

In FIG. 5, the semiconductor processing equipment further includes a target material 1, a cover ring 2 and a heat insulation ring 3 arranged on the upper part of the chamber 5.

It should be noted that in practical applications, the sensor 11 and the base 6 can also be relatively fixed, and multiple sensors 11 can be installed to simultaneously detect the state of the workpiece. Of course, one sensor 11 can also be installed, which is further controlled by The component judges the state of the workpiece 7 to be processed according to the length of time that the emission signal sent by the emission end of the sensor 11 is blocked.

In summary, the semiconductor processing equipment provided by the embodiments of the present invention is provided with a sensor in the chamber, and the transmitting end of the sensor is used to transmit a transmitting signal toward the receiving end in a direction parallel to the bearing surface of the base; The control component is used to receive the transmitted signal from the transmitter and the detection signal received by the receiver, compare the transmitted signal with the received signal, and determine the state of the workpiece on the base according to the comparison result. With the aid of the above-mentioned sensors and control components, it is possible to discover in time that there are no workpieces, tilts or damages on the bearing surface before the semiconductor process, so as to avoid losses to other accessories.

Based on the same idea, an embodiment of the present invention also provides a method for detecting a workpiece in a semiconductor process. As shown in FIG. 6, the method includes the following steps:

301: Put the processed workpiece into the chamber and place it on the bearing surface of the base at the transfer position.

302: Send a transmitting signal to the receiving end of the sensor through the transmitting end of the sensor in a direction parallel to the bearing surface of the base;

303: Compare the transmitted signal with the received signal, and determine the state of the workpiece on the base according to the comparison result.

Among them, the sensor is fixed relative to the chamber, and the base can move between the transmission position and the process position. In addition, the transmitting position of the transmitting end and the receiving position of the receiving end are both located between the transmitting position and the process position.

When the base rises from the transmission position to the working position, the workpiece to be processed will block the transmitting signal from the transmitting end of the sensor due to its thickness. The processed workpieces in different states have different shielding times for the transmitted signal. Based on this, the transmitted signal and the received signal can be compared, and the shielding time of the transmitted signal can be obtained according to the comparison result, and the shielding time is compared with the preset detection threshold. Compare, and then judge the state of the processed workpiece according to the comparison result of the blocking time and the preset detection threshold. Specifically, because the processed workpieces in different states have different shielding times for the transmitted signal, for example, as shown in FIG. 2, the processed workpiece 7 in the normal state is in a state of being placed horizontally (parallel to the bearing surface), assuming this state The occlusion time obtained by the lower detection is t1; as shown in FIG. 3, when the workpiece 7 to be processed is inclined, it is assumed that the occlusion time obtained by the detection in this state is t2. As shown in FIG. 4, when the workpiece 7 to be processed is damaged or deformed, the blocking time detected in this state is zero. Assuming that the preset detection threshold t is the shielding time of the transmitted signal when the workpiece 7 is in a normal state, it can be inferred that t1 is equal to t, and t2 is greater than t. The detected occlusion time is compared with the preset detection threshold. If the comparison result shows that the occlusion time is 0, which is less than t, or the occlusion time is greater than t, it can be determined that the state of the processed workpiece 7 is abnormal.

It should be noted that in this embodiment, detecting the state of the processed workpiece in the chamber includes: as shown in FIG. 2, the processed workpiece 7 is horizontally located on the support column 8; as shown in FIG. 3, the processed workpiece One side of the workpiece 7 is located on the support column 8, and the other side falls onto the base; as shown in FIG. 4, after being damaged by the processed workpiece 7, it completely falls onto the base.

In one or more embodiments of the present invention, if the blocking time matches the preset detection threshold, that is, the blocking time is equal to t, the processed workpiece is horizontally located on the bearing surface of the base (normal state).

In practical applications, the preset detection threshold can be determined according to the ascent speed of the processed workpiece and the thickness of the processed workpiece in the normal state as shown in Figure 2, for example, the ascent speed is V and the thickness of the processed workpiece Is S, then the blocking time of the processed workpiece is T=S/V. In order to avoid misjudgment, a certain detection range is set based on the central value, for example, a detection range of plus or minus 10%.

In one or more embodiments of the present invention, it further includes: if the blocking time is greater than the preset detection threshold, that is, the blocking time is greater than t, determining that the state of the processed workpiece is abnormal, for example, the processed workpiece is inclined relative to the bearing surface.

As shown in Figure 3, when the workpiece 7 to be processed is inclined in the chamber, one side of the workpiece 7 to be processed is located on the support column 8, and the other side is located on the base, resulting in the range of the sensor light that is blocked by the workpiece 7 Increase, when the workpiece 7 to be processed rises, the blocking time is longer. When this abnormal situation is detected, optionally, the device will issue an alarm prompt (for example, sound and light prompt) to notify the staff to check the status of the processed workpiece. It can effectively avoid or reduce the impact on production caused by the damage of the processed workpiece.

In one or more embodiments of the present invention, the method further includes: if the blocking time is less than the preset detection threshold, that is, the blocking time is 0, determining that there is no workpiece to be processed on the bearing surface.

As shown in Figure 4, when the workpiece is processed as a whole or falls on the base due to damage, the sensor will not detect the presence of the workpiece. In other words, the thickness of the detected workpiece is less than the preset detection threshold. The thickness range of the processed workpiece, when the processed workpiece rises, the blocking time is shorter (may be close to zero). When this abnormal situation is detected, the device will send out an alarm prompt (for example, sound and light prompt) to notify the staff to check the status of the processed workpiece. It can effectively avoid or reduce the impact on production caused by the damage or drop of the processed workpiece.

In practical applications, the aforementioned semiconductor process may be a magnetron sputtering process or the like.

In the technical solution of the workpiece detection method in the semiconductor process provided by the embodiment of the present invention, a sensor is provided in the chamber, and the transmitting end of the sensor is used to send a transmitting signal to the receiving end in a direction parallel to the bearing surface of the base; It also includes a control component, which is used to receive the transmitted signal sent by the transmitter and the received signal received by the receiver, compare the transmitted signal with the received signal, and determine the state of the workpiece on the base according to the comparison result. With the aid of the above-mentioned sensors and control components, it is possible to discover in time that there are no workpieces, tilts or damages on the bearing surface before the semiconductor process, so as to avoid losses to other accessories.

The device embodiments described above are merely illustrative. The units described as separate components may or may not be physically separate, and the components displayed as units may or may not be physical units, that is, they may be located in One place, or it can be distributed to multiple network units. Some or all of the modules can be selected according to actual needs to achieve the objectives of the solutions of the embodiments. Those of ordinary skill in the art can understand and implement without creative work.

Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, not to limit it; although the present invention has been described in detail with reference to the foregoing embodiments, those of ordinary skill in the art should understand that: The technical solutions recorded in the foregoing embodiments are modified, or some of the technical features are equivalently replaced; these modifications or replacements do not cause the essence of the corresponding technical solutions to deviate from the spirit and scope of the technical solutions of the embodiments of the present invention.

Claims

A semiconductor processing equipment, characterized in that the semiconductor processing equipment comprises:

A chamber, in which is provided a base for carrying the workpiece to be processed;

A sensor, the sensor has a transmitting end and a receiving end, the transmitting end and the receiving end are disposed oppositely on both sides of the base, and the transmitting end is used to face in a direction parallel to the bearing surface of the base The receiving end sends out a transmission signal; and

A control component, which is used to receive the transmission signal sent by the transmitter and the reception signal received by the receiver, compare the transmission signal and the reception signal, and determine according to the comparison result The state of the workpiece on the base.
The semiconductor processing equipment according to claim 1, wherein one of the sensor and the base can move in a direction perpendicular to the bearing surface, and the other is fixed relative to the chamber .
The semiconductor processing equipment according to claim 2, wherein the sensor is fixed relative to the chamber, and the base can move between a transmission position and a process position; and, the emission of the transmitting end Both the position and the receiving position of the receiving end are located between the transmission position and the process position.
The semiconductor processing equipment according to claim 3, wherein the side wall of the chamber comprises a first side wall and a second side wall which are oppositely arranged, and a third side which is respectively adjacent to the two and oppositely arranged. Wall and a fourth side wall, wherein the transmitting position of the transmitting end and the receiving position of the receiving end are arranged on the first side wall and the second side wall; the cavity further includes The film transfer port of the workpiece, the film transfer port is arranged on the third side wall or the fourth side wall.
4. The semiconductor processing equipment according to claim 2, wherein the control component is configured to obtain the blocking time of the emission signal during the movement of one of the sensor and the base according to the comparison result, The blocking time is compared with a preset detection threshold, and the state of the processed workpiece on the base is determined according to the comparison result of the blocking time and the preset detection threshold.
The device according to claim 3, wherein the detection range of the transmitted signal in the direction perpendicular to the bearing surface matches the thickness of the workpiece.
The semiconductor processing equipment according to claim 1, wherein the transmission direction of the transmission signal deviates from the center of the carrying surface.
4. The semiconductor processing equipment according to claim 1, wherein a plurality of support columns are provided on the base at intervals along the circumference thereof, and the support ends of the plurality of support columns constitute the bearing surface.
The semiconductor processing equipment according to claim 1, wherein the semiconductor processing equipment is a magnetron sputtering equipment.
A method for detecting a workpiece in a semiconductor process, wherein the method for detecting a workpiece uses the semiconductor processing equipment according to any one of claims 1-9, and includes:

Transferring the processed workpiece into the chamber and placing it on the bearing surface of the base at the transfer position;

Sending a transmitting signal to the receiving end of the sensor through the transmitting end of the sensor in a direction parallel to the bearing surface of the base;

The transmitted signal and the received signal are compared, and the state of the processed workpiece on the base is determined according to the comparison result.
The workpiece detection method according to claim 10, wherein the workpiece detection method uses the semiconductor processing equipment according to claim 3; the transmitting end of the sensor is parallel to the bearing surface of the base The step of sending a transmitting signal in the direction of the sensor toward the receiving end of the sensor includes:

The base is moved from the transmission position to the process position, and during the movement, the transmitting end of the sensor sends out to the receiving end of the sensor in a direction parallel to the bearing surface of the base transmit a signal.
The workpiece detection method according to claim 11, wherein the step of comparing the transmitted signal with the received signal, and judging the state of the workpiece on the base according to the comparison result, comprises :

Comparing the transmitting signal and the receiving signal, and obtaining the blocking time of the transmitting signal in the process of the base moving from the transmission position to the process position according to the comparison result;

The blocking time is compared with a preset detection threshold, and the state of the processed workpiece on the base is determined according to the comparison result of the blocking time and the preset detection threshold.
The workpiece detection method according to claim 12, wherein the blocking time is compared with a preset detection threshold, and the blocking time is compared with the preset detection threshold to determine the The status of the processed workpiece, including:

If the blocking time matches the preset detection threshold, it is determined that the workpiece to be processed is horizontally located on the bearing surface;

If the blocking time is greater than the preset detection threshold, it is determined that the state of the processed workpiece is abnormal;

If the blocking time is less than the preset detection threshold, it is determined that there is no workpiece to be processed on the bearing surface.