WO2020134325A1 - Ltcc带通滤波器 - Google Patents

Ltcc带通滤波器 Download PDF

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Publication number
WO2020134325A1
WO2020134325A1 PCT/CN2019/110329 CN2019110329W WO2020134325A1 WO 2020134325 A1 WO2020134325 A1 WO 2020134325A1 CN 2019110329 W CN2019110329 W CN 2019110329W WO 2020134325 A1 WO2020134325 A1 WO 2020134325A1
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Prior art keywords
layer
conductor
top wall
wall
close
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PCT/CN2019/110329
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English (en)
French (fr)
Inventor
刘泽南
王亚
陈勇利
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AAC Technologies Holdings Shenzhen Co Ltd
AAC Module Technologies Changzhou Co Ltd
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AAC Acoustic Technologies Shenzhen Co Ltd
AAC Module Technologies Changzhou Co Ltd
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Publication of WO2020134325A1 publication Critical patent/WO2020134325A1/zh
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Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
    • H03H7/01—Frequency selective two-port networks
    • H03H7/0115—Frequency selective two-port networks comprising only inductors and capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P1/00—Auxiliary devices
    • H01P1/20—Frequency-selective devices, e.g. filters
    • H01P1/201—Filters for transverse electromagnetic waves
    • H01P1/203—Strip line filters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P1/00—Auxiliary devices
    • H01P1/20—Frequency-selective devices, e.g. filters
    • H01P1/201—Filters for transverse electromagnetic waves
    • H01P1/203—Strip line filters
    • H01P1/20327—Electromagnetic interstage coupling
    • H01P1/20336—Comb or interdigital filters
    • H01P1/20345—Multilayer filters
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H1/00—Constructional details of impedance networks whose electrical mode of operation is not specified or applicable to more than one type of network
    • H03H1/0007—Constructional details of impedance networks whose electrical mode of operation is not specified or applicable to more than one type of network of radio frequency interference filters
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
    • H03H7/01—Frequency selective two-port networks
    • H03H7/09—Filters comprising mutual inductance
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
    • H03H7/01—Frequency selective two-port networks
    • H03H7/17—Structural details of sub-circuits of frequency selective networks
    • H03H7/1741—Comprising typical LC combinations, irrespective of presence and location of additional resistors
    • H03H7/1775—Parallel LC in shunt or branch path
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H1/00—Constructional details of impedance networks whose electrical mode of operation is not specified or applicable to more than one type of network
    • H03H2001/0021—Constructional details
    • H03H2001/0085—Multilayer, e.g. LTCC, HTCC, green sheets

Definitions

  • the invention relates to the technical field of filters, in particular to an LTCC band-pass filter.
  • the fifth generation of communication technology is dedicated to building an ecosystem of information and communication technology and is one of the hottest topics in the industry. Unlike the previous 2G, 3G and 4G, 5G is not only an upgrade of mobile communication technology, but also a driving platform for the future digital world and an infrastructure for the development of the Internet of Things. It will truly create a new era of full connectivity. 5G spectrum will add Sub There are two frequency bands of 6G and UHF, and the Sub 6G frequency band is 3.3GHz-3.6GHz and 4.8GHz-5.0GHz, which can provide 100-200MHz continuous spectrum. In the future, with the advancement of 4.5G networks and the landing of 5G networks, the frequency band of mobile phone communications will increase substantially, driving the growth of demand for filters.
  • the 6G frequency band is a newly added frequency band, including 3.3GHz-3.6GHz and 4.8GHz-5.0GH.
  • LTCC low-temperature co-fired ceramic
  • the object of the present invention is to provide an LTCC bandpass filter with high compatibility and covering the entire Sub 6G frequency band.
  • an LTCC band-pass filter the LTCC band-pass filter includes a housing and a filter assembly housed in the housing;
  • the housing includes a top wall and a bottom wall opposite to the top wall;
  • the filter assembly includes a first layer, two second layers stacked on opposite sides of the first layer, and two layers stacked on two sides of the second layer away from the first layer A third layer and a fourth layer interposed between one of the second layer and the third layer, the first layer, the second layer, the third layer and the fourth layer and the top wall vertical;
  • the first layer includes a top end of the first layer close to the top wall and a bottom end of the first layer close to the bottom wall.
  • the top end of the first layer is connected to the ground, and the bottom end of the first layer forms an open state.
  • the first layer is used as an inductor L;
  • the second layer includes a top end of the second layer close to the top wall and a bottom end of the second layer close to the bottom wall.
  • the top end of the second layer forms an open state, and the bottom end of the second layer is grounded and connected.
  • the second layer is used as a grounding capacitor C, and the second layer and the first layer form a coupling to form an LC resonance unit;
  • the third layer ground connection is used as a shield layer of the LTCC band-pass filter
  • the fourth layer includes a top end of the fourth layer close to the top wall and a bottom end of the fourth layer close to the bottom wall, both the top end of the fourth layer and the bottom end of the fourth layer form an open circuit state, the The fourth layer is used to introduce electrical cross-coupling of the first layer and the second layer.
  • the first layer includes three first conductors arranged in parallel and spaced apart, two second conductors arranged on opposite sides of the first conductor, and the end of the second conductor close to the bottom wall is far away
  • a connector extending vertically in the direction of the first conductor and a third conductor extending from the connector in a direction parallel to the first conductor toward the top wall; the first conductor, the second conductor, and The third conductors are parallel to each other and spaced apart, the ends of the first conductor and the second conductor near the top wall are flush with each other, and the ends of the first conductor near the bottom wall are closer to the The end of the second conductor close to the bottom wall is further away from the bottom wall.
  • the second layer includes three parallel spaced fourth conductors and two fifth conductors disposed on opposite sides of the fourth conductor, and the two fifth conductors are parallel to the fourth conductor and Spaced apart; the end of the fourth conductor and the fifth conductor near the bottom wall are flush with each other, the end of the fifth conductor near the top wall is closer to the top than the fourth conductor One end of the wall is farther away from the top wall; three of the fourth conductors are stacked on three of the first conductors to form a coupling, and two of the fifth conductors are stacked on two of the second conductors respectively to form coupling.
  • the third layer includes a flat body, two top notches formed at an end of the flat body close to the top wall, and two open ends formed by an end of the flat body close to the bottom wall Two bottom gaps spaced apart from each other and two side gaps respectively opened by the two side ends of the flat body; the orthographic projections of the first layer and the second layer respectively to the third layer are At least partially within the range of the third layer, the ends of the two first conductors on the side of the first layer close to the two second conductors near the top wall are respectively aligned with the two top notches Yes, the ends of the two second conductors of the first layer near the top wall are directly opposite to the two top notches, and the two third conductors of the first layer extend to Facing the two side-end notches, the ends of the two fourth conductors on the side of the second layer close to the fifth conductor close to the top wall respectively face the two top-end notches .
  • the fourth layer includes a main body portion spaced parallel to the top wall, a first extending portion extending perpendicularly from one end of the main body portion toward the top wall, and the other opposite from the main body portion
  • a second extension extending perpendicularly toward the bottom wall, an end of the first extension close to the top wall is directly opposite to one of the top notches, and the second extension close to the One end of the bottom wall is directly opposite to one of the notch at the bottom end.
  • the end of the first conductor of the first layer closer to the bottom wall is farther away from the bottom wall than the end of the fourth conductor of the second layer closer to the bottom wall, and the The end of the first conductor near the top wall is flush with the end of the fourth conductor near the top wall.
  • the end of the second conductor of the first layer close to the bottom wall is flush with the end of the fifth conductor of the second layer close to the bottom wall, and the second conductor is close to the An end of the top wall is closer to the top wall than an end of the fifth conductor closer to the top wall.
  • the center operating frequency of the LTCC bandpass filter is 4200MHz
  • the passband width is 1700MHz
  • the insertion loss in the passband is ⁇ 0.87dB
  • the input/output impedance is 50 ⁇
  • the fluctuation in the passband is ⁇ 0.50dB.
  • the LTCC band-pass filter provided by the present invention has the following advantages: it can completely cover the Sub 6G frequency band, greatly improve the compatibility of the filter, and reduce the use of the filter in the production and assembly process of the device Types to improve overall production efficiency.
  • FIG. 1 is a perspective view of the LTCC band-pass filter of the present invention
  • FIG. 2 is an exploded perspective view of the LTCC band-pass filter of the present invention
  • Figure 3 is a cross-sectional view taken along line A-A in Figure 1;
  • FIG. 4 is a cross-sectional view taken along line B-B in FIG. 1;
  • FIG. 5 is a schematic diagram of the first layer structure of the LTCC band-pass filter of the present invention.
  • FIG. 6 is a schematic diagram of the second layer structure of the LTCC band-pass filter of the present invention.
  • FIG. 7 is a schematic diagram of the third layer structure of the LTCC band-pass filter of the present invention.
  • FIG. 8 is a schematic diagram of the fourth layer structure of the LTCC band-pass filter of the present invention.
  • FIG. 9 is an S-parameter curve diagram of the LTCC band-pass filter of the present invention.
  • an embodiment of the present invention provides an LTCC bandpass filter 100.
  • the LTCC bandpass filter 100 includes a housing 1 and a filter assembly 2 housed and fixed in the housing 1.
  • the housing 1 includes a top wall 11 and a bottom wall 12 opposite to the top wall 11.
  • the housing 1 has a rectangular cubic structure, such as a rectangular parallelepiped structure.
  • the filter component 2 is an LTCC multilayer structure, which includes a first layer 21, two second layers 22 stacked on opposite sides of the first layer 21, and two stacked second layers, respectively Two third layers 23 on the side of 22 away from the first layer 21 and a fourth layer 24 sandwiched between one of the second layer 21 and the third layer 23.
  • the first layer 21, the second layer 22, the third layer 23 and the fourth layer 24 are perpendicular to the top wall 11.
  • the first layer 21 includes a first layer top 21a near the top wall 11 and a first layer bottom 21b near the bottom wall 12, and the first layer top 21a is connected to ground.
  • the bottom end 21b of the first layer forms an open circuit state, and the first layer 21 serves as an inductor L.
  • the first layer 21 includes three first conductors 211 arranged in parallel, two second conductors 212 disposed on opposite sides of the first conductor 211, and the second conductor 212 is close to the bottom
  • One end of the wall 12 extends perpendicularly away from the first conductor 211 and a third conductor 214 extending parallel to the first conductor 211 toward the top wall 11 from the connecting body 213.
  • the first conductor 211, the second conductor 212, and the third conductor 214 are parallel to and spaced apart from each other, and the ends of the first conductor 211 and the second conductor 212 near the top wall 11 are parallel to each other At the same time, the end of the first conductor 211 near the bottom wall 12 is farther away from the bottom wall 12 than the end of the second conductor 212 near the bottom wall 12.
  • the second layer 22 includes a second layer top end 22a near the top wall 11 and a second layer bottom end 22b near the bottom wall 12, the second layer top end 22a forms an open circuit state
  • the bottom end 22b of the second layer is connected to ground.
  • the second layer 22 serves as a grounding capacitor C.
  • the second layer 22 and the first layer 21 form a coupling to form an LC resonance unit.
  • the second layer 22 includes three parallel spaced fourth conductors 221 and two fifth conductors 222 disposed on opposite sides of the fourth conductor 221, two of the fifth conductors 222 and the The fourth conductors 221 are parallel and spaced apart.
  • the end of the fourth conductor 221 and the fifth conductor 222 near the bottom wall 12 are flush with each other, and the end of the fifth conductor 222 near the top wall 11 is closer than that of the fourth conductor 221
  • One end of the top wall 12 is further away from the top wall 11.
  • three fourth conductors 221 are stacked on three first conductors 211 to form a coupling
  • two fifth conductors 222 are stacked on two second conductors 212 respectively to form coupling.
  • the third layer 23 is grounded to serve as a shielding layer of the LTCC band-pass filter 100 and to shield electronic interference caused by clutter in the circuit of the filter assembly 2 to ensure the LTCC The stability of the band-pass filter 100 in operation.
  • the third layer 23 includes a flat body 231, two top notches 232 formed at an end of the flat body 231 close to the top wall 11 and spaced apart from each other, and the flat body close to the bottom wall Two bottom end notches 233 opened at one end of 12 and two side end notches 234 respectively opened by the two side ends of the plate body 231.
  • the orthographic projections of the first layer 21 and the second layer 22 to the third layer 23 are at least partially within the range of the third layer 23.
  • the ends of the two first conductors 211 of the first layer 21 close to the two second conductors 212 near the top wall 11 are directly opposite to the two top notches 232, the first layer
  • the ends of the two second conductors 212 of 21 that are close to the top wall 11 are respectively opposite to the two top notches 232, and the two third conductors 214 of the first layer 21 extend to and The two side end gaps 234 are directly opposite.
  • the ends of the two fourth conductors 221 of the second layer 22 close to the fifth conductor 222 near the top wall 11 are respectively opposite to the two top notches 232.
  • the fourth layer 24 includes a fourth layer top end 24a close to the top wall 11 and a fourth layer bottom end 24b close to the bottom wall 12, the fourth layer top end 24a and the The bottom ends 24b of the fourth layer all form an open circuit state, and the fourth layer 24 is used to introduce the electrical cross coupling of the first layer 21 and the second layer 22 to improve the selectivity of the LTCC bandpass filter 100 , Making the passband edge steeper.
  • the fourth layer 24 includes a main body portion 241 disposed parallel to the top wall 11, a first extending portion 242 extending perpendicularly from one end of the main body portion 241 toward the top wall 11, and a self-position The other opposite end of the main body portion 241 extends vertically toward the bottom wall 12 in the direction of the second extending portion 243.
  • the end of the first extension portion 242 near the top wall 11 is directly opposite to one of the top notches 232, and the end of the second extension portion 243 near the bottom wall 12 is One of the bottom notches 233 is directly opposite.
  • the end of the first conductor 211 of the first layer 21 closer to the bottom wall 12 is farther away from the bottom wall 12 than the end of the fourth conductor 221 of the second layer 22 closer to the bottom wall 12 , And the end of the first conductor 211 near the top wall 11 is flush with the end of the fourth conductor 221 near the top wall 11.
  • the end of the second conductor 212 of the first layer 21 close to the bottom wall 12 is flush with the end of the fifth conductor 222 of the second layer 22 close to the bottom wall 12, the second The end of the conductor 212 near the top wall 11 is closer to the top wall 11 than the end of the fifth conductor 222 near the top wall 11.
  • the LTCC bandpass filter 100 completely covers the Sub 6G dual frequency band (3.3-3.6GHz, 4.8-5.0GH), and at the same time controls the overall insertion loss of the passband within 0.87dB, The reflection coefficient is controlled below -10dB, the ripple in the passband is less than 0.50dB, the out-of-band suppression is good, the edge of the passband is steep, and the overall performance is excellent.
  • the central working frequency of the LTCC bandpass filter 100 provided by the present invention is 4200MHz, the passband width is 1700MHz, the insertion loss in the passband is ⁇ 0.87dB, the input/output impedance is 50 ⁇ , and the fluctuation in the passband is ⁇ 0.50dB.
  • the LTCC band-pass filter provided by the present invention has the following advantages: it can completely cover the Sub 6G frequency band, greatly improve the compatibility of the filter, and reduce the use of the filter in the production and assembly process of the device Types to improve overall production efficiency.

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  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Control Of Motors That Do Not Use Commutators (AREA)
  • Filters And Equalizers (AREA)

Abstract

本发明提供了一种LTCC带通滤波器，其包括壳体和收容于所述壳体内的滤波组件；壳体包括顶壁和与顶壁相对的底壁；滤波组件包括第一层、分别叠设于第一层相对两侧的两个第二层、分别叠设于两个第二层的远离第一层一侧的两个第三层以及夹设于其中一个所述第二层与所述第三层之间的第四层，所述第一层用于充当电感L，所述第二层用于充当接地电容C，所述第二层与所述第一层形成耦合共同构成LC谐振单元，所述第三层接地连接，用于充当所述LTCC带通滤波器的屏蔽层，所述第四层用于引入所述第一层和所述第二层的电交叉耦合。本发明提供的LTCC带通滤波器可以完整覆盖Sub 6G频段，还提高了滤波器的兼容性，提升整体生产制造效率。

Description

LTCC带通滤波器 技术领域
本发明涉及滤波器技术领域，尤其涉及一种LTCC带通滤波器。
 背景技术
第五代通信技术（5G）致力于构建信息与通信技术的生态系统，是目前业界最热的课题之一。不同于以前的2G、3G和4G，5G不仅仅是移动通信技术的升级换代，更是未来数字世界的驱动平台和物联网发展的基础设施，将真正创建一个全联接的新时代。5G频谱将新增Sub 6G及超高频两个频段，Sub 6G频段即3.3GHz-3.6GHz、4.8GHz-5.0GHz，可提供100-200MHz连续频谱。未来随着4.5G网络的推进和5G网络的落地，手机通信频段将大幅增加，带动滤波器需求增长。
鉴于5G频谱中的Sub 6G频段属于新增频段，包含 3.3GHz-3.6GHz、4.8GHz-5.0GH，市场上针对该频段的低温共烧陶瓷技术（Low Temperature Co-fired Ceramic，LTCC）带通滤波器种类较少，同时现有滤波器仅能覆盖Sub 6G两个频段中的单个频带。现有技术的缺陷：市面上大多数滤波器对Sub 6G频谱的覆盖不全面，在使用过程中不具有兼容性。
 技术问题
本发明的目的在于提供一种具有高度兼容性且可覆盖整个Sub 6G频段的LTCC带通滤波器。
 技术解决方案
本发明的技术方案如下：一种LTCC带通滤波器，所述LTCC带通滤波器包括壳体和收容于所述壳体内的滤波组件；
所述壳体包括顶壁和与所述顶壁相对的底壁；
所述滤波组件包括第一层、分别叠设于所述第一层相对两侧的两个第二层、分别叠设于两个所述第二层的远离所述第一层一侧的两个第三层以及夹设于其中一个所述第二层与所述第三层之间的第四层，所述第一层、第二层、第三层及第四层与所述顶壁垂直；
所述第一层包括靠近所述顶壁的第一层顶端和靠近所述底壁的第一层底端，所述第一层顶端接地连接，所述第一层底端形成开路状态，所述第一层用于充当电感L；
所述第二层包括靠近所述顶壁的第二层顶端和靠近所述底壁的第二层底端，所述第二层顶端形成开路状态，所述第二层底端接地连接，所述第二层用于充当接地电容C，所述第二层与所述第一层形成耦合共同构成LC谐振单元；
所述第三层接地连接，用于充当所述LTCC带通滤波器的屏蔽层；
所述第四层包括靠近所述顶壁的第四层顶端和靠近所述底壁的第四层底端，所述第四层顶端和所述第四层底端均形成开路状态，所述第四层用于引入所述第一层和所述第二层的电交叉耦合。
优选的，所述第一层包括三根平行间隔设置的第一导体、设置于所述第一导体相对两侧的两根第二导体、由所述第二导体靠近所述底壁的一端向远离所述第一导体方向垂直延伸的连接体以及由所述连接体沿平行于所述第一导体向靠近所述顶壁方向延伸的第三导体；所述第一导体、所述第二导体以及所述第三导体相互平行且间隔设置，所述第一导体与所述第二导体的靠近所述顶壁的一端相互平齐，所述第一导体的靠近所述底壁的一端较所述第二导体的靠近所述底壁的一端更远离所述底壁。
优选的，所述第二层包括三根平行间隔设置的第四导体和设置于所述第四导体相对两侧的两根第五导体，两个所述第五导体与所述第四导体平行且间隔设置；所述第四导体与所述第五导体的靠近所述底壁的一端相互平齐，所述第五导体的靠近所述顶壁的一端较所述第四导体的靠近所述顶壁的一端更远离所述顶壁；三根所述第四导体分别叠设于三根所述第一导体并形成耦合，两根所述第五导体分别叠设于两根所述第二导体并形成耦合。
优选的，所述第三层包括平板体、由所述平板体靠近所述顶壁的一端开设的两个相互间隔设置的顶端缺口、由所述平板体靠近所述底壁的一端开设的两个相互间隔设置的底端缺口以及由所述平板体的两个侧端分别开设的两个侧端缺口；所述第一层及所述第二层分别向所述第三层的正投影均至少部分位于所述第三层的范围内，所述第一层的靠近两个所述第二导体一侧的两个第一导体靠近所述顶壁的一端分别与两个所述顶端缺口正对，所述第一层的两个所述第二导体的靠近所述顶壁的一端分别与两个所述顶端缺口正对，所述第一层的两个所述第三导体分别延伸至与两个所述侧端缺口正对，所述第二层的靠近所述第五导体一侧的两个所述第四导体靠近所述顶壁的一端分别与两个所述顶端缺口正对。
优选的，所述第四层包括与所述顶壁平行间隔设置的主体部、自所述主体部一端向靠近所述顶壁方向垂直延伸的第一延伸部和自所述主体部另一相对端向靠近所述底壁方向垂直延伸的第二延伸部，所述第一延伸部的靠近所述顶壁的一端与其中一个所述顶端缺口正对，所述第二延伸部的靠近所述底壁的一端与其中一个所述底端缺口正对。
优选的，所述第一层的所述第一导体靠近所述底壁的一端较所述第二层的所述第四导体靠近所述底壁的一端更远离所述底壁，且所述第一导体的靠近所述顶壁的一端与所述第四导体的靠近所述顶壁的一端平齐。
优选的，所述第一层的所述第二导体靠近所述底壁的一端与所述第二层的所述第五导体靠近所述底壁的一端平齐，所述第二导体靠近所述顶壁的一端较所述第五导体靠近所述顶壁的一端更靠近所述顶壁。
优选的，所述LTCC带通滤波器的中心工作频率为4200MHz，通带宽度为1700MHz，通带内插入损耗≤0.87dB，输入/输出阻抗为50Ω，通带内波动≤0.50dB。
 有益效果
与相关技术相比，本发明提供的一种LTCC带通滤波器具有如下优点：可以完整覆盖Sub 6G频段的同时，大大提高了滤波器的兼容性，减少了设备生产组装过程中的滤波器使用种类，提升整体生产制造效率。
 附图说明
为了更清楚地说明本发明实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其它的附图，其中：
图1为本发明LTCC带通滤波器的立体图；
图2为本发明LTCC带通滤波器的立体分解图；
图3为沿图1中A-A线的剖视图；
图4为沿图1中B-B线的剖视图；
图5为本发明LTCC带通滤波器的第一层结构示意图；
图6为本发明LTCC带通滤波器的第二层结构示意图；
图7为本发明LTCC带通滤波器的第三层结构示意图；
图8为本发明LTCC带通滤波器的第四层结构示意图；
图9为本发明LTCC带通滤波器的S参数曲线图。
 本发明的实施方式
下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅是本发明的一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其它实施例，都属于本发明保护的范围。
请参阅图1至4，本发明实施例提供了一种LTCC带通滤波器100，所述LTCC带通滤波器100包括壳体1和收容固定于所述壳体1内的滤波组件2。
所述壳体1包括顶壁11和与所述顶壁11相对的底壁12。本实施方式中，所述壳体1为矩形立方体结构，如长方体结构。
所述滤波组件2为LTCC多层结构，其包括第一层21、分别叠设于所述第一层21相对两侧的两个第二层22、分别叠设于两个所述第二层22的远离所述第一层21一侧的两个第三层23以及夹设于其中一个所述第二层21与所述第三层23之间的第四层24。其中所述第一层21、第二层22、第三层23及第四层24与所述顶壁11垂直。
请结合参阅图5，所述第一层21包括靠近所述顶壁11的第一层顶端21a和靠近所述底壁12的第一层底端21b，所述第一层顶端21a接地连接，所述第一层底端21b形成开路状态，所述第一层21用于充当电感L。
具体地，所述第一层21包括三根平行间隔设置的第一导体211、设置于所述第一导体211相对两侧的两根第二导体212、由所述第二导体212靠近所述底壁12的一端向远离所述第一导体211方向垂直延伸的连接体213以及由所述连接体213沿平行于所述第一导体211向靠近所述顶壁11方向延伸的第三导体214。所述第一导体211、所述第二导体212以及所述第三导体214相互平行且间隔设置，所述第一导体211与所述第二导体212的靠近所述顶壁11的一端相互平齐，所述第一导体211的靠近所述底壁12的一端较所述第二导体212的靠近所述底壁12的一端更远离所述底壁12。
请结合参阅图6，所述第二层22包括靠近所述顶壁11的第二层顶端22a和靠近所述底壁12的第二层底端22b，所述第二层顶端22a形成开路状态，所述第二层底端22b接地连接，所述第二层22用于充当接地电容C，所述第二层22与所述第一层21形成耦合共同构成LC谐振单元。
具体地，所述第二层22包括三根平行间隔设置的第四导体221和设置于所述第四导体221相对两侧的两根第五导体222，两个所述第五导体222与所述第四导体221平行且间隔设置。所述第四导体221与所述第五导体222的靠近所述底壁12的一端相互平齐，所述第五导体222的靠近所述顶壁11的一端较所述第四导体221的靠近所述顶壁12的一端更远离所述顶壁11。
在本实施方式中，三根所述第四导体221分别叠设于三根所述第一导体211并形成耦合，两根所述第五导体222分别叠设于两根所述第二导体212并形成耦合。
请结合参阅图7，所述第三层23接地连接，用于充当所述LTCC带通滤波器100的屏蔽层，用于屏蔽滤波组件 2 的电路中杂波造成的电子干扰，保证所述 LTCC 带通滤波器 100 工作中的稳定性。
具体地，所述第三层23包括平板体231、由所述平板体231靠近所述顶壁11的一端开设的两个相互间隔设置的顶端缺口232、由所述平板体靠近所述底壁12的一端开设的两个相互间隔设置的底端缺口233以及由所述平板体231的两个侧端分别开设的两个侧端缺口234。
在本实施方式中，所述第一层21及所述第二层22分别向所述第三层23的正投影均至少部分位于所述第三层23的范围内。所述第一层21的靠近两个所述第二导体212一侧的两个第一导体211靠近所述顶壁11的一端分别与两个所述顶端缺口232正对，所述第一层21的两个所述第二导体212的靠近所述顶壁11的一端分别与两个所述顶端缺口232正对，所述第一层21的两个所述第三导体214分别延伸至与两个所述侧端缺口234正对。所述第二层22的靠近所述第五导体222一侧的两个所述第四导体221靠近所述顶壁11的一端分别与两个所述顶端缺口232正对。
请结合参阅图8，所述第四层24包括靠近所述顶壁11的第四层顶端24a和靠近所述底壁12的第四层底端24b，所述第四层顶端24a和所述第四层底端24b均形成开路状态，所述第四层24用于引入所述第一层21和所述第二层22的电交叉耦合，提高所述LTCC带通滤波器100的选择性，使通带边沿更为陡峭。
具体地，所述第四层24包括与所述顶壁11平行间隔设置的主体部241、自所述主体部241一端向靠近所述顶壁11方向垂直延伸的第一延伸部242和自所述主体部241另一相对端向靠近所述底壁12方向垂直延伸的第二延伸部243。
在本实施方式中，所述第一延伸部242的靠近所述顶壁11的一端与其中一个所述顶端缺口232正对，所述第二延伸部243的靠近所述底壁12的一端与其中一个所述底端缺口233正对。
所述第一层21的所述第一导体211靠近所述底壁12的一端较所述第二层22的所述第四导体221靠近所述底壁12的一端更远离所述底壁12，且所述第一导体211的靠近所述顶壁11的一端与所述第四导体221的靠近所述顶壁11的一端平齐。
所述第一层21的所述第二导体212靠近所述底壁12的一端与所述第二层22的所述第五导体222靠近所述底壁12的一端平齐，所述第二导体212靠近所述顶壁11的一端较所述第五导体222靠近所述顶壁11的一端更靠近所述顶壁11。
再结合图9所示，可见，所述LTCC带通滤波器100完整覆盖了Sub 6G双频段（3.3-3.6GHz，4.8-5.0GH），同时将通带的整体插入损耗控制在0.87dB以内，反射系数控制在-10dB以下，通带内纹波小于0.50dB，带外抑制度良好，通带边沿陡峭，整体性能优异。
本发明提供的所述LTCC带通滤波器100的中心工作频率为4200MHz，通带宽度为1700MHz，通带内插入损耗≤0.87dB，输入/输出阻抗为50Ω，通带内波动≤0.50dB。
与相关技术相比，本发明提供的一种LTCC带通滤波器具有如下优点：可以完整覆盖Sub 6G频段的同时，大大提高了滤波器的兼容性，减少了设备生产组装过程中的滤波器使用种类，提升整体生产制造效率。
以上所述的仅是本发明的实施方式，在此应当指出，对于本领域的普通技术人员来说，在不脱离本发明创造构思的前提下，还可以做出改进，但这些均属于本发明的保护范围。

Claims (8)

  1. 一种LTCC带通滤波器，其特征在于，所述LTCC带通滤波器包括壳体和收容于所述壳体内的滤波组件；
    所述壳体包括顶壁和与所述顶壁相对的底壁；
    所述滤波组件包括第一层、分别叠设于所述第一层相对两侧的两个第二层、分别叠设于两个所述第二层的远离所述第一层一侧的两个第三层以及夹设于其中一个所述第二层与所述第三层之间的第四层，所述第一层、第二层、第三层及第四层与所述顶壁垂直；
    所述第一层包括靠近所述顶壁的第一层顶端和靠近所述底壁的第一层底端，所述第一层顶端接地连接，所述第一层底端形成开路状态，所述第一层用于充当电感L；
    所述第二层包括靠近所述顶壁的第二层顶端和靠近所述底壁的第二层底端，所述第二层顶端形成开路状态，所述第二层底端接地连接，所述第二层用于充当接地电容C，所述第二层与所述第一层形成耦合共同构成LC谐振单元；
    所述第三层接地连接，用于充当所述LTCC带通滤波器的屏蔽层；
    所述第四层包括靠近所述顶壁的第四层顶端和靠近所述底壁的第四层底端，所述第四层顶端和所述第四层底端均形成开路状态，所述第四层用于引入所述第一层和所述第二层的电交叉耦合。
  2. 根据权利要求1所述的LTCC带通滤波器，其特征在于，所述第一层包括三根平行间隔设置的第一导体、设置于所述第一导体相对两侧的两根第二导体、由所述第二导体靠近所述底壁的一端向远离所述第一导体方向垂直延伸的连接体以及由所述连接体沿平行于所述第一导体向靠近所述顶壁方向延伸的第三导体；所述第一导体、所述第二导体以及所述第三导体相互平行且间隔设置，所述第一导体与所述第二导体的靠近所述顶壁的一端相互平齐，所述第一导体的靠近所述底壁的一端较所述第二导体的靠近所述底壁的一端更远离所述底壁。
  3. 根据权利要求2所述的LTCC带通滤波器，其特征在于，所述第二层包括三根平行间隔设置的第四导体和设置于所述第四导体相对两侧的两根第五导体，两个所述第五导体与所述第四导体平行且间隔设置；所述第四导体与所述第五导体的靠近所述底壁的一端相互平齐，所述第五导体的靠近所述顶壁的一端较所述第四导体的靠近所述顶壁的一端更远离所述顶壁；三根所述第四导体分别叠设于三根所述第一导体并形成耦合，两根所述第五导体分别叠设于两根所述第二导体并形成耦合。
  4. 根据权利要求3所述的LTCC带通滤波器，其特征在于，所述第三层包括平板体、由所述平板体靠近所述顶壁的一端开设的两个相互间隔设置的顶端缺口、由所述平板体靠近所述底壁的一端开设的两个相互间隔设置的底端缺口以及由所述平板体的两个侧端分别开设的两个侧端缺口；所述第一层及所述第二层分别向所述第三层的正投影均至少部分位于所述第三层的范围内，所述第一层的靠近两个所述第二导体一侧的两个第一导体靠近所述顶壁的一端分别与两个所述顶端缺口正对，所述第一层的两个所述第二导体的靠近所述顶壁的一端分别与两个所述顶端缺口正对，所述第一层的两个所述第三导体分别延伸至与两个所述侧端缺口正对，所述第二层的靠近所述第五导体一侧的两个所述第四导体靠近所述顶壁的一端分别与两个所述顶端缺口正对。
  5. 根据权利要求4所述的LTCC带通滤波器，其特征在于，所述第四层包括与所述顶壁平行间隔设置的主体部、自所述主体部一端向靠近所述顶壁方向垂直延伸的第一延伸部和自所述主体部另一相对端向靠近所述底壁方向垂直延伸的第二延伸部，所述第一延伸部的靠近所述顶壁的一端与其中一个所述顶端缺口正对，所述第二延伸部的靠近所述底壁的一端与其中一个所述底端缺口正对。
  6. 根据权利要求4所述的LTCC带通滤波器，其特征在于，所述第一层的所述第一导体靠近所述底壁的一端较所述第二层的所述第四导体靠近所述底壁的一端更远离所述底壁，且所述第一导体的靠近所述顶壁的一端与所述第四导体的靠近所述顶壁的一端平齐。
  7. 根据权利要求4所述的LTCC带通滤波器，其特征在于，所述第一层的所述第二导体靠近所述底壁的一端与所述第二层的所述第五导体靠近所述底壁的一端平齐，所述第二导体靠近所述顶壁的一端较所述第五导体靠近所述顶壁的一端更靠近所述顶壁。
  8. 根据权利要求1所述的LTCC带通滤波器，其特征在于，所述LTCC带通滤波器的中心工作频率为4200MHz，通带宽度为1700MHz，通带内插入损耗≤0.87dB，输入/输出阻抗为50Ω，通带内波动≤0.50dB。
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