WO2020133000A1 - 体声波谐振器 - Google Patents

体声波谐振器 Download PDF

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Publication number
WO2020133000A1
WO2020133000A1 PCT/CN2018/124081 CN2018124081W WO2020133000A1 WO 2020133000 A1 WO2020133000 A1 WO 2020133000A1 CN 2018124081 W CN2018124081 W CN 2018124081W WO 2020133000 A1 WO2020133000 A1 WO 2020133000A1
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Prior art keywords
acoustic wave
wave resonator
bulk acoustic
resonator according
unit cell
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PCT/CN2018/124081
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English (en)
French (fr)
Inventor
杨清瑞
庞慰
孙晨
张孟伦
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Tianjin University
ROFS Microsystem Tianjin Co Ltd
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Tianjin University
ROFS Microsystem Tianjin Co Ltd
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Priority to PCT/CN2018/124081 priority Critical patent/WO2020133000A1/zh
Publication of WO2020133000A1 publication Critical patent/WO2020133000A1/zh
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/125—Driving means, e.g. electrodes, coils

Definitions

  • the present invention relates to the field of semiconductor technology, and particularly to a bulk acoustic wave resonator.
  • FIG. 1 The conventional top-view structure of the bulk acoustic wave resonator is shown in FIG. 1, and the cross-sectional structure in FIG. x2 can be obtained by cutting along the broken line AOA' in FIG. x1.
  • the basic structure of the bulk acoustic wave included in FIGS. 1 and 2 includes the substrate SUB, The acoustic mirror structure AM embedded on the substrate, the lower electrode BE on the substrate and the acoustic mirror, the piezoelectric thin film structure PZ on the lower electrode and the substrate, and the upper electrode TE on the piezoelectric film.
  • FIG. 1 further includes a lower electrode pin BEC and an upper electrode pin TEC. The structure of these two parts is not shown in FIG. 2.
  • the ideal working state of a bulk acoustic wave resonator is that when an RF input voltage is applied to the upper and lower electrodes TE and BE, the piezoelectric film PZ will generate mechanical vibration in piston mode in response to this voltage, thereby converting electrical energy into mechanical energy.
  • a large amount of parasitic mode vibration (clutter) will also be generated.
  • the presence of the clutter will occupy considerable energy and cause resonance
  • the quality factor (Q value) of the resonator is degraded.
  • the performance of the filter composed of a plurality of resonators is also greatly reduced.
  • the present invention provides a bulk acoustic wave resonator that can reduce clutter and have a higher quality factor.
  • the bulk acoustic wave resonator of the present invention includes a substrate, an acoustic mirror structure, a lower electrode, a piezoelectric thin film structure, and an upper electrode arranged in this order from bottom to top.
  • the upper surface and/or the lower surface of the upper electrode and/or the lower electrode have A subsidiary structure having protrusions or depressions in a direction perpendicular to the surface of the upper electrode.
  • the height of the protrusion or the depth of the depression is to
  • the distribution form of the protrusions or depressions of the subsidiary structure has the following characteristics: having a minimum unit cell structure, the unit cells are distributed in a plane along a straight line trajectory, and each of the unit cells is in at least two different directions It is periodically distributed.
  • the unit cell has a central circle and three peripheral circles, and the three peripheral circles and the central circle are connected by three rod-shaped structures, and the unit cell is along the center circle center and three peripherals The three consecutive centerlines of the center of the circle are periodically distributed.
  • the unit cell has a central circle and six equally distributed rod-shaped structures that are evenly distributed radially, and the cell is periodically distributed along three straight line directions where the six rod-shaped structures are located.
  • the distribution form of the protrusions or depressions of the accessory structure has the following characteristics: it has a minimal unit cell structure, and the unit cells are distributed in a plane along a concentric closed curve.
  • the distribution form of the protrusions or depressions of the subsidiary structure has the following characteristics: it has a minimum unit cell structure, and the unit cells are distributed in a plane along the trajectory of concentric closed curves.
  • the distribution form of the protrusions or depressions of the subsidiary structure has the following characteristics: having a minimum unit cell structure, the unit cells are distributed in a plane along the trajectory of a spiral curve or a spiral polyline.
  • the unit cell has a lack of predetermined regularity.
  • the value range of the duty cycle of the figure of the auxiliary structure is 5%-95%.
  • the base material includes: single crystal silicon, gallium arsenide, quartz or sapphire.
  • the materials of the upper electrode and the lower electrode include: molybdenum, ruthenium, gold, aluminum, magnesium, tungsten, copper, titanium, iridium, osmium, chromium, or a composite of the above metals or alloys thereof.
  • the materials of the auxiliary structure include: silicon dioxide, aluminum nitride, silicon nitride, silicon carbide, polymer, molybdenum, ruthenium, gold, aluminum, magnesium, tungsten, copper, titanium, iridium, osmium , Chromium or a combination of the above metals or their alloys.
  • the material of the piezoelectric layer includes: aluminum nitride, zinc oxide, lead titanium zirconate, doped aluminum nitride, and doped zinc oxide, and the piezoelectric layer is doped with one of the following elements Or more: scandium, yttrium, magnesium, titanium, lanthanum, cerium, praseodymium, neodymium, promethium, samarium, europium, gadolinium, terbium, dysprosium, holmium, erbium, thulium, ytterbium, lutetium.
  • the bulk acoustic wave resonator of the present invention suppresses the parasitic vibration mode in the resonator by adding an auxiliary structure to the upper and lower surfaces of the electrode of the resonator, and changing the structure of the upper surface of the piezoelectric film, thereby improving the Q value of the resonator and improving
  • the accessory structure also functions to adjust the vibration frequency of the resonator.
  • FIG. 1 is a plan view of a conventional structure of a bulk acoustic wave resonator
  • FIG. 2 is a cross-sectional view of a conventional structure of a bulk acoustic wave resonator
  • FIG. 3 is a schematic diagram of an auxiliary structure of a bulk acoustic wave resonator according to an embodiment of the present invention located on the upper surface of the upper electrode;
  • FIG. 4 is a schematic diagram of the position of the auxiliary structure of the bulk acoustic wave resonator according to the embodiment of the present invention at the lower surface of the upper electrode;
  • FIG. 5 is a schematic diagram of the position of the auxiliary structure of the bulk acoustic wave resonator according to the embodiment of the present invention at the upper and lower surfaces of the upper electrode;
  • FIG. 6 is a schematic plan view of an additional structure of a patterned upper electrode of a bulk acoustic wave resonator according to an embodiment of the present invention.
  • 7a is a schematic diagram of the distribution form of protrusions or depressions of the subsidiary structure of the first embodiment
  • FIG. 7b is a projection of the unit cell pattern corresponding to FIG. 7a in the case of defect-free full close packing
  • FIG. 8 is a schematic diagram of the distribution form of protrusions or depressions of the subsidiary structure of the second embodiment
  • FIG. 9 is a schematic diagram of the distribution form of protrusions or depressions of the subsidiary structure of the third embodiment.
  • FIG. 10 is a schematic diagram of the distribution form of protrusions or depressions of the subsidiary structure of the fourth embodiment
  • FIG. 11 is a schematic diagram of the distribution form of protrusions or depressions of the subsidiary structure of the fifth embodiment
  • Figure 12b is a schematic diagram of five spirals
  • Fig. 13a is a schematic diagram of a unit cell of spirally distributed strip-shaped protrusions or depressions with a constant width
  • FIG. 13b is a schematic diagram of a spirally distributed strip-shaped convex or concave unit cell with a gradually varying width.
  • the terms “installation”, “connected”, “connected”, “fixed” and other terms should be understood in a broad sense, for example, it can be a fixed connection or a detachable connection , Or integrally connected; it can be a mechanical connection or an electrical connection; it can be directly connected, or it can be indirectly connected through an intermediary, or it can be the connection between two components.
  • installation can be a fixed connection or a detachable connection , Or integrally connected; it can be a mechanical connection or an electrical connection; it can be directly connected, or it can be indirectly connected through an intermediary, or it can be the connection between two components.
  • a bulk acoustic wave resonator includes a substrate, an acoustic mirror structure, a lower electrode, a piezoelectric thin film structure, and an upper electrode arranged in this order from bottom to top, wherein the upper surface and/or the lower surface of the upper electrode and/or the lower electrode
  • the surface has an auxiliary structure that has protrusions or depressions in a direction perpendicular to the upper electrode surface.
  • the additional layer MLU1 is located on the upper surface of the upper electrode TE.
  • the additional layer MLL2 is located between the lower surface of the upper electrode TE2 and the piezoelectric layer.
  • the additional layers MLU3 and MLL3 are located on the upper and lower surfaces of the upper electrode TE3, respectively.
  • the auxiliary structure has a convex or concave shape in a direction perpendicular to the surface of the upper electrode. The height of the protrusion or the depth of the depression is to Preferred range to Similarly, an auxiliary structure may also be provided on the upper surface and/or the lower surface of the lower electrode.
  • the bulk acoustic wave resonator of the embodiment of the present invention suppresses the parasitic vibration mode in the resonator by adding auxiliary structures to the upper and lower surfaces of the upper electrode of the resonator and changing the structure of the upper surface of the piezoelectric film, thereby improving the resonator
  • the auxiliary structure added to the upper electrode also functions to adjust the vibration frequency of the resonator.
  • the distribution forms of the protrusions or depressions of the subsidiary structure can be specifically divided into three categories: periodic distribution, concentric distribution, and spiral distribution. Detailed description will be given below with reference to specific embodiments.
  • This type of distribution has the smallest “unit cell” structure, the unit cells are distributed in a plane along a straight line, and each unit cell is periodically distributed in at least two different directions.
  • a "defect" mode can be introduced in this type of distribution, that is, some cells are removed from the pattern according to certain rules or requirements.
  • the radii of the three peripheral circles are not necessarily the same, and the centers of the three peripheral circles may form any triangle.
  • the circular size, the center-to-center distance and the width of the rod-like structure in the unit cell are all greater than 1 ⁇ m, and the preferred range is 0.5-1.5 times the wavelength of the acoustic wave.
  • the unit cell has a spatial period of periodic distribution greater than 1 ⁇ m along the direction of three concentric lines of the center circle center and three peripheral circle centers, preferably in the range of 0.5-1.5 times the wavelength of the acoustic wave.
  • the unit cell pattern may be convex or concave relative to the material outside the pattern in a direction perpendicular to the surface of the upper electrode.
  • a defect mode can also be introduced, such as excluding the unit cell shown by the dotted line in FIG. 7.
  • FIG. 7b is a projection of the unit cell pattern corresponding to FIG. 7a in the case of defect-free full close packing.
  • the total area of the rectangular range is A0
  • the total area of the cell shadow is A1
  • the preferred value range of the duty ratio R is 5%-95%.
  • the diameter of the circle, the center distance between the two nearest circles and the width of the rod-like structure are greater than 1 ⁇ m, preferably in the range of 0.5-1.5 times the wavelength of the acoustic wave.
  • the unit cell pattern may be convex or concave relative to the material outside the pattern in a direction perpendicular to the surface of the upper electrode.
  • This type of distribution contains several concentric ring structures, and the ring structure is used as the arrangement trajectory of the unit cell.
  • the top-view shape of the unit cell may be round, elliptical, polygonal, or other special shapes surrounded by curved lines, which may be columnar protrusions or depressions in a direction perpendicular to the surface of the upper electrode.
  • a "defect" mode can be introduced in this type of distribution, that is, some cells are removed from the pattern according to certain rules or requirements.
  • FIG. 9 is a schematic diagram of a distribution form of protrusions or depressions of the subsidiary structure of the third embodiment.
  • the distribution locus of the unit cell UE3 is a series of concentric circles Cn. It should be noted that although the unit cell EU3 is represented by a circle, it does not represent a specific pattern of the unit cell. The actual acceptable pattern of the unit cell includes circles, ellipses, various polygons, various circular and irregular closed curves, and combinations of the above shapes.
  • the innermost circle in the family of concentric circles of unit cell trajectories is denoted as C 0
  • its radius is denoted as R 0
  • the circles from inside to outside are C1, C2, C3, etc., and their radii are R1, R2, R3, etc.
  • the relationship between the radius Rn of a certain circle Cn and the number of turns n can be controlled by the following mathematical formula:
  • R 0 is the radius of the innermost circle, ranging from 2-30 ⁇ m; or the area of the circle with R 0 as the radius does not exceed half of the resonator area.
  • R 0 is the radius of the innermost circle of 2-30 ⁇ m; or the area of the circle with R 0 as the radius does not exceed half of the resonator area.
  • k is used to control the speed at which the radius of the circle expands with the number of turns, and can take a real number greater than 0.
  • FIG. 10 is a schematic diagram of a distribution form of protrusions or depressions of the subsidiary structure of the fourth embodiment.
  • the cell trajectories CM2 and TEB2 closest to the edge of the upper electrode TEB2 have a similar shape, and then gradually change shape inward, and become circular in the area near the center.
  • the maximum distance from the center of the trajectory Cn of each turn to the center is Rn, and its changing rule is the same as that of the third embodiment.
  • the definition method and requirements for the cell density Dn are the same as those in the third embodiment.
  • the top-view shape, unevenness and size requirements of the unit cell are the same as those in the third embodiment.
  • the unit cells are arranged along a spiral curve extending clockwise or counterclockwise from the center and the area near the center.
  • the shape of the unit cell can be round, oval, polygonal, or other curves.
  • Special shape which can be columnar protrusions or depressions in the direction perpendicular to the upper electrode surface.
  • a "defect" mode can be introduced in this type of distribution, that is, some cells are removed from the pattern according to certain rules or requirements.
  • FIG. 11 is a schematic diagram of a distribution form of protrusions or depressions of the subsidiary structure of the fifth embodiment.
  • the unit cell EU5 has a continuous smooth spiral HL3. Among them, the distance between adjacent spirals satisfies: DT n ⁇ DT n+1 , and the cell spacing satisfies: S n ⁇ S n+1 .
  • the spiral shape can be determined by equations in polar coordinates.
  • the specific form of the equation can be divided into:
  • ⁇ is the distance from a point on the spiral to the pole
  • ⁇ is the angle between the above distance and the horizontal direction
  • the P 0 parameter is used to control the distance from the starting point of the spiral to the pole
  • the P parameter is used to control the spiral spacing.
  • P 0 range is 0-30 ⁇ m, or the circle area with P 0 radius is not more than half of the resonator area, P range is 0.3-8 ⁇ m.
  • ⁇ is the distance from a certain point on the spiral to the pole
  • ⁇ is the angle between the above distance and the horizontal direction
  • the parameters Q and ⁇ determine the change of the spiral pitch.
  • Q range 0-30 ⁇ m (excluding 0), ⁇ range 0-50, preferably 0-20 (excluding 0), or the area of the circle with Q as the radius does not exceed half of the resonator area
  • spirals include: golden spiral, interlocking spiral, hyperbolic spiral and so on.
  • a defect mode can also be introduced, for example, only all the unit cells before each spiral line intersects the boundary TEB3 for the first time can be retained.
  • the unit cells are distributed along the segmented spiral curve or spiral broken line, which can be continuous distribution or discrete distribution.
  • the distribution trajectory is similar to the shape of the edge near the electrode edge TEB4, and gradually changes to a polyline shape toward the center.
  • the continuously distributed unit cells form a stripe-shaped protrusion or depression structure, and the width DS1 of the stripe structure can always remain unchanged, as shown in FIG. 13a; or the width DS2 of the stripe structure tapers from the center outwards, such as This is shown in Figure 13b.
  • the width of the strip structure is greater than 1 ⁇ m, preferably in the range of 0.5 to 1.5 times the wavelength of the acoustic wave. If the discrete distribution of the unit cells is adopted, the size of a single unit cell remains unchanged or gradually decreases from the inside to the outside.
  • the material composition of each structure may be as follows:
  • the material of the substrate may be: monocrystalline silicon (preferred), gallium arsenide, quartz, sapphire, etc.
  • the material of the upper and lower electrodes may be: molybdenum (preferred), ruthenium, gold, aluminum, magnesium, tungsten, copper, titanium, iridium, osmium, chromium, or a combination of the above metals or alloys thereof.
  • the material of the auxiliary structure may be one or more selected from electrode materials or alloys thereof, and non-metallic materials such as silicon dioxide, aluminum nitride, silicon nitride, silicon carbide, and polymers may also be selected.
  • the piezoelectric layer is doped with one or more of the following elements: scandium (preferred), yttrium, magnesium, titanium, lanthanum, cerium, praseodymium, neodymium, promethium, samarium, europium, gadolinium, terbium, dysprosium, holmium, Erbium, Thulium, Ytterbium, Lutetium.

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Abstract

一种体声波谐振器，包括由下至上依次排列的基底（SUB）、声学镜结构（AM）、下电极（BE）、压电薄膜结构（PZ）、上电极（TE），所述上电极（TE）和/或下电极（BE）的上表面和/或下表面具有附属结构，所述附属结构在垂直于上电极（TE）表面的方向上具有凸起或凹陷。

Description

体声波谐振器 技术领域
本发明涉及半导体技术领域，特别地涉及一种体声波谐振器。
背景技术
体声波谐振器的传统俯视结构如图1所示，沿图x1中的折线AOA’剖开可得到图x2中的剖视结构，图1和图2中包含的体声波基本结构包括基底SUB，嵌入于基底上的声学镜结构AM，位于基底和声学镜之上的下电极BE，位于下电极和基底之上的压电薄膜结构PZ，以及位于压电薄膜之上的上电极TE。其中图1中还包含下电极引脚BEC和上电极引脚TEC，此两部分结构在图2中未示出。
体声波谐振器的理想工作状态是：在上下电极TE和BE施加射频输入电压时，压电薄膜PZ会响应该电压产生活塞模式的机械振动，从而将电能转化为机械能。然而，在传统结构的体波谐振器的实际工作状态中，除了产生活塞模式的振动之外，还会产生大量的寄生模式振动(杂波)，杂波的存在会占据可观的能量从而导致谐振器的品质因数(Q值)劣化，此外由多个谐振器构成的滤波器的性能也会因此大幅下降。
发明内容
有鉴于此，本发明提供一种体声波谐振器，能够减少杂波，具有更高品质因素。
本发明的体声波谐振器，包括由下至上依次排列的基底、声学镜结构、下电极、压电薄膜结构、上电极，所述上电极和/或下电极的上表面和/或下表面具有附属结构，所述附属结构在垂直于上电极表面的 方向上具有凸起或凹陷。
可选地，所述凸起高度或所述凹陷深度范围为
Figure PCTCN2018124081-appb-000001
至
Figure PCTCN2018124081-appb-000002
可选地，所述附属结构的凸起或凹陷的分布形式具有如下特征：具有最小晶胞结构，所述晶胞沿直线轨迹进行平面分布，且每个所述晶胞在至少两个不同方向上呈周期性分布。
可选地，所述晶胞具有一个中心圆形和三个周边圆形，且三个周边圆形和中心圆形由三个棒状结构相连接，所述晶胞沿中心圆圆心和三个周边圆圆心的三个连心线方向进行周期分布。
可选地，所述晶胞具有一个中心圆形和六个平均地放射状分布的相同棒状结构，所述晶胞沿所述六个棒状结构所在的三条直线方向进行周期分布。
可选地，所述附属结构的凸起或凹陷的分布形式具有如下特征：具有最小晶胞结构，所述晶胞沿同心封闭曲线迹进行平面分布。
可选地，所述附属结构的凸起或凹陷的分布形式具有如下特征：具有最小晶胞结构，所述晶胞沿同心封闭曲线的轨迹进行平面分布。
可选地，所述同心封闭曲线为同心圆。
可选地，所述附属结构的凸起或凹陷的分布形式具有如下特征：具有最小晶胞结构，所述晶胞沿螺旋曲线或螺旋折线的轨迹进行平面分布。
可选地，所述附属结构的凸起或凹陷的分布形式中，所述晶胞存在预设规律性的缺失。
可选地，所述附属结构的图形的占空比的取值范围为5％-95％。
可选地，所述基底材料包括：单晶硅、砷化镓、石英或者蓝宝石。
可选地，所述上电极和所述下电极的材料包括：钼、钌、金、铝、镁、钨、铜，钛、铱、锇、铬或以上金属的复合或其合金。
可选地，所述附属结构的材料包括：二氧化硅、氮化铝、氮化硅、碳化硅、多聚物、钼、钌、金、铝、镁、钨、铜，钛、铱、锇、铬或以上金属的复合或其合金。
可选地，所述压电层的材料包括：氮化铝、氧化锌、钛锆酸铅、掺杂氮化铝、掺杂氧化锌，所述压电层掺杂有如下元素中的一种或多种：钪、钇、镁、钛、镧、铈、镨、钕、钷、钐、铕、钆、铽、镝、钬、铒、铥、镱、镥。
本发明的体声波谐振器通过对谐振器的电极的上下表面添加附属结构，并且改变压电薄膜上表面的结构来抑制谐振器中的寄生振动模式，从而达到提高谐振器的Q值，并改善谐振器和由其构成的滤波器或其他电子器件的性能的目的。同时该附属结构还起到调节谐振器的振动频率的功能。
附图说明
附图用于更好地理解本发明，不构成对本发明的不当限定。其中：
图1是体声波谐振器传统结构俯视图；
图2是体声波谐振器传统结构剖视图；
图3是本发明实施例的体声波谐振器的附属结构位于上电极上表面位置的示意图；
图4是本发明实施例的体声波谐振器的附属结构位于上电极下表面位置的示意图；
图5是本发明实施例的体声波谐振器的附属结构位于上电极上表面和下表面位置的示意图；
图6是本发明实施例的体声波谐振器的具有图案的上电极附加结构的俯视示意图；
图7a是第一实施例的附属结构的凸起或凹陷的分布形式示意图；
图7b为图7a对应的无缺陷全密排情况下的晶胞图案投影；
图8是第二实施例的附属结构的凸起或凹陷的分布形式示意图；
图9是第三实施例的附属结构的凸起或凹陷的分布形式示意图；
图10是第四实施例的附属结构的凸起或凹陷的分布形式示意图；
图11是第五实施例的附属结构的凸起或凹陷的分布形式示意图；
图12a是单条螺旋线的示意图；
图12b是五条螺旋线的示意图；
图13a是宽度恒定的螺旋分布条形凸起或凹陷的晶胞的示意图；
图13b是宽度渐变的螺旋分布条形凸起或凹陷的晶胞的示意图。
具体实施方式
下面详细描述本发明的实施例，所述实施例的示例在附图中示出，其中自始至终相同或类似的标号表示相同或类似的元件或具有相同或类似功能的元件。下面通过参考附图描述的实施例是示例性的，旨在用于解释本发明，而不能理解为对本发明的限制。
在本发明的描述中，需要理解的是，术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”“内”、“外”、“顺时针”、“逆时针”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本发明和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本发明的限制。
此外，术语“第一”、“第二”仅用于描述目的，而不能理解为 指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个该特征。在本发明的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。
在本发明中，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”、“固定”等术语应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或一体地连接；可以是机械连接，也可以是电连接；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通。对于本领域的普通技术人员而言，可以根据具体情况理解上述术语在本发明中的具体含义。
在本发明中，除非另有明确的规定和限定，第一特征在第二特征之“上”或之“下”可以包括第一和第二特征直接接触，也可以包括第一和第二特征不是直接接触而是通过它们之间的另外的特征接触。而且，第一特征在第二特征“之上”、“上方”和“上面”包括第一特征在第二特征正上方和斜上方，或仅仅表示第一特征水平高度高于第二特征。第一特征在第二特征“之下”、“下方”和“下面”包括第一特征在第二特征正下方和斜下方，或仅仅表示第一特征水平高度小于第二特征。
本发明实施例的体声波谐振器，包括由下至上依次排列的基底、声学镜结构、下电极、压电薄膜结构、上电极，其中，上电极和/或下电极的上表面和/或下表面具有附属结构，该附属结构在垂直于上电极表面的方向上具有凸起或凹陷。
具体地，在图3所示的谐振器结构中附加层MLU1位于上电极TE上表面。在图4所示的谐振器结构中附加层MLL2位于上电极TE2下表面和压电层之间。在图5所示的谐振器结构中附加层MLU3和MLL3分别位于上电极TE3的上表面和下表面。其中附属结构在垂直于上电 极表面的方向上具有凸起或凹陷形状。凸起高度或凹陷深度范围为
Figure PCTCN2018124081-appb-000003
Figure PCTCN2018124081-appb-000004
至
Figure PCTCN2018124081-appb-000005
优选范围
Figure PCTCN2018124081-appb-000006
至
Figure PCTCN2018124081-appb-000007
类似的，也可以在下电极的上表面和/或下表面设置附属结构。
如图6所示，本发明实施例的具有电极附属结构的谐振器上电极具有附加结构TEM，且该附加结构具有一定的凹凸图案(TEM部分阴影图案仅为示意性说明，不代表具体图形)。该类图案可有效削弱寄生模式形成的驻波，从而大幅降低寄生模式造成的能量损耗。
由上可知，本发明实施例的体声波谐振器通过对谐振器上电极的上下表面添加附属结构，并且改变压电薄膜上表面的结构来抑制谐振器中的寄生振动模式，从而达到提高谐振器的Q值，并改善谐振器和由其构成的滤波器或其他电子器件的性能的目的。同时添加于上电极的附属结构还起到调节谐振器的振动频率的功能。
附属结构的凸起或凹陷的分布形式可具体分为三类：周期性分布、同心型分布、螺旋型分布。下面结合具体实施例进行详细说明。
(一)周期型分布
该类分布形式具有最小“晶胞”结构，晶胞沿直线轨迹进行平面分布，且每个晶胞在至少两个不同方向上呈周期性分布。同时该类型分布中可引入“缺陷”模式,即按照一定规律或需求从图案中剔除部分晶胞。
(1)图7a是第一实施例的附属结构的凸起或凹陷的分布形式示意图。在图7a中，晶胞EU1具有一个中心圆形和三个周边圆形，且三个周边圆形和中心圆形由三个棒状结构相连接。晶胞沿中心圆圆心和三个周边圆圆心的三个连心线方向，即图示的DR1、DR2和DR3方向，进行周期分布。
可选地，三个周边圆形的半径不一定为全同，三个周边圆的中心 可构成任意三角形。
可选地，晶胞内圆形尺寸、圆心距和棒状结构宽度均大于1μm，优选范围0.5-1.5倍声波波长。
可选地，晶胞沿中心圆圆心和三个周边圆圆心的三个连心线方向，进行周期分布的空间周期大于1μm，优选范围0.5-1.5倍声波波长。
可选地，晶胞图案在沿垂直于上电极表面的方向上相对于图案之外的材料可以为凸起或者凹陷。
可选地，还可引入缺陷模式，例如剔除图7中虚线所示的晶胞。
可选地，为了获得更好的器件性能，可以对晶胞的占空比R进行调控。图7b为图7a对应的无缺陷全密排情况下的晶胞图案投影。如图7b所示，记矩形范围的总面积为A0，晶胞阴影的总面积为A1，则占空比R由下式定义：R＝A1/A0。占空比R的优选取值范围是5％-95％。当占空比R低于50％时图形为凸起结构，当占空比R高于50％时图形为凹陷结构。
(2)图8是第二实施例的附属结构的凸起或凹陷的分布形式示意图。在图8中，晶胞EU2具有一个中心圆形和六个平均地放射状分布的相同棒状结构，晶胞沿所述六个棒状结构所在的三条直线方向进行周期分布。具体地址，如图8可知，图中所有圆形为全等，相邻距离最近的三圆的圆心，如点A、O、B，构成等边三角形，且相邻最近的两圆之间由棒状结构相连；多边形ABCDEF和多边形GHIJKL为正六边形，其中六边形GHIJKL的每个顶点，如点H，均为所在正三角形，如三角形AOB，的中心。阴影部分由圆形、六边形GHIJKL和部分棒状结构边缘围成。A200的晶胞沿中心O和六边形三个顶点A、B、C的连线方向，即DR1、DR2和DR3，周期性重复。
可选地，圆的直径、相邻距离最近的两圆圆心距和棒状结构宽度大于1μm，优选范围0.5-1.5倍声波波长。
可选地，晶胞图案在沿垂直于上电极表面的方向上相对于图案之外的材料可以为凸起或者凹陷。
可选地，还可引入缺陷模式，如剔除图8中虚线表示的若干岛状 结构。
(二)同心型分布
该类分布包含若干个同心环形结构，并以环形结构作为晶胞的排列轨迹。晶胞的俯视形状可选圆形，椭圆形，多边形，或其它曲线围成的异形，其垂直于上电极表面的方向上可以为柱状凸起或凹陷。同时该类型分布中可引入“缺陷”模式,即按照一定规律或需求从图案中剔除部分晶胞。
(1)图9是第三实施例的附属结构的凸起或凹陷的分布形式示意图。在图9中，晶胞UE3的分布轨迹为一系列同心圆Cn。需要说明单是，尽管晶胞EU3以圆圈表示，并不代表晶胞具体的图案。晶胞实际可取的图案包含圆形，椭圆形，各种多边形，各种环形和异形封闭曲线，及以上形状的组合。
需要说明的是，由于上电极的边界通常并不是圆形，而是如图9所示的多边形或封闭曲线形TEB1，因此，当晶胞沿圆周CM1排列时，落在上电极边界之外的晶胞则被剔除，只保留边界TEB1以内的晶胞。
可选地，晶胞排列轨迹的同心圆族中最内圈记为C 0，其半径记为R 0。由内向外的圆形依次为C1、C2、C3等,其半径依次为R1、R2、R3等。其中某一圆形Cn的半径为Rn，相邻两圆半径之差随n增大而增大或保持不变，即满足：R n+1-R n≤R n+2-R n+1，n＝0,1,2…
可选的，其中某一圆形Cn的半径Rn和圈数n的关系可由如下数学公式控制：
(a)幂函数型(包含线性型)
R n＝R 0×(n+1) r，n＝0,1,2…
其中R 0为最内圈圆的半径,范围2-30μm；或者以R 0为半径的圆面积不超过谐振器面积一半。
r用于控制圆形半径随圈数扩大的速度，可取不小于1的实数。当r＝1时，圆的半径呈线性变化。
(b)指数型
R n＝R 0exp(kn),n＝0,1,2…
其中R 0为最内圈圆的半径范围2-30μm；或者以R 0为半径的圆面积不超过谐振器面积一半。
k用于控制圆形半径随圈数扩大的速度，可取大于0的实数。
若某一半径为R n的圆形轨迹C n上排列有P n个晶胞，则该圆形轨迹上的晶胞密度D n定义为：
D n＝P n/(2πR n)
同时确保以下关系成立：
D n+1≤D n
即由内向外确保晶胞密度不增加。
A300还可引入缺陷模式，如可选择性的剔除若干晶胞或剔除某几个整圈的晶胞，例如剔除被上电极边界截断的晶胞排列轨迹上的所有晶胞。
(2)图10是第四实施例的附属结构的凸起或凹陷的分布形式示意图。在图10中，最靠近上电极边缘TEB2的晶胞排列轨迹CM2和TEB2的形状相似，然后逐渐向内发生形状渐变，并在接近中心的区域内变成圆形。每一圈排列轨迹Cn上到中心的最大距离为Rn，其变化规律同第三实施例。对晶胞密度Dn的定义方式和要求同第三实施例。晶胞俯视形状、凹凸情况及尺寸要求同第三实施例。
(三)螺旋型分布
在该类分布中晶胞沿由中心及中心附近区域顺时针或逆时针向外延伸的螺旋形曲线排布，晶胞的俯视形状可选圆形，椭圆形，多边形，或其它曲线围成的异形，其垂直于上电极表面的方向上可以为柱状凸起或凹陷。同时该类型分布中可引入“缺陷”模式,即按照一定规律或需求从图案中剔除部分晶胞。
(1)图11是第五实施例的附属结构的凸起或凹陷的分布形式示意图。在图11中，晶胞EU5排布轨迹为连续光滑型螺旋线HL3。其中，相邻螺线间距离满足：DT n≤DT n+1，而胞间距满足：S n≤S n+1。
可选的，可通过极坐标下的方程来确定螺线形状。方程具体形式可分为：
(a)等速螺线型(阿基米德螺线)
ρ＝P 0+Pθ
其中ρ为螺线上某点到极点的距离，θ为上述距离与水平方向所成夹角，P 0参数用于控制螺线起点距离极点的距离，P参数用于控制螺线间距。P 0范围0-30μm,或者以P 0为半径的圆面积不超过谐振器面积一半，P的范围为0.3-8μm.
(b)对数螺线型
ρ＝Qexp(λθ)
其中ρ为螺线上某点到极点的距离，θ为上述距离与水平方向所成夹角，参数Q和λ决定了螺线间距的变化。Q范围0-30μm(不包括0),λ的范围0-50，优选范围0-20(不包括0)，或者以Q为半径的圆面积不超过谐振器面积一半
其它可选的螺线的数学形式还包含：黄金螺线，连锁螺线，双曲螺线等等。
需要说明的是，螺线数量M可以大于1，其获得方式为绕中心将单条螺线旋转一定角度获得。如图12a和图12b分别示出了M＝2和M＝5两种情况的例子。
可选地，还可引入缺陷模式，例如可只保留到每条螺旋线首次与边界TEB3相交之前的所有晶胞。
(2)晶胞沿分段的螺旋曲线或螺旋折线分布，可为连续分布，也可采用离散分布。分布轨迹在靠近电极边缘TEB4附近与该边缘形状相似，向中心逐渐变为折线型。
本实施例中连续分布的晶胞形成条形突起或凹陷结构，条形结构的宽度DS1可始终保持不变，如图13a所示；或者条形结构宽度DS2 由中心向外逐渐变细，如图13b所示。其中条状结构宽度大于1μm，优选范围0.5至1.5倍声波波长。若采用晶胞离散分布的形式，则单个晶胞的尺寸由内向外保持不变或者逐渐变小。
本发明实施例的体声波谐振器中，各结构的材料成分可以如下：
基底的材料可以为：单晶硅(优选)，砷化镓，石英，蓝宝石等。
上下电极的材料可以为：钼(优选)、钌、金、铝、镁、钨、铜，钛、铱、锇、铬等或以上金属的复合或其合金。
附属结构的材料可以为从电极材料中选取一种或多种或其合金，也可选二氧化硅、氮化铝、氮化硅、碳化硅、多聚物等非金属材料。
压电层(尤其是压电层的有效区域)的材料可以为：氮化铝(优选)、氧化锌、钛锆酸铅、具有一定原子比的掺杂氮化铝或氧化锌。上述材料为压电薄膜，厚度小于10微米。氮化铝薄膜为多晶形态或者单晶形态，生长方式为薄膜溅射(sputtering)或者有机金属化学气相沉积法(MOCVD)。
其中压电层掺杂有如下元素中的一种或多种：钪(优选)、钇、镁、钛、镧、铈、镨、钕、钷、钐、铕、钆、铽、镝、钬、铒、铥、镱、镥。
上述具体实施方式，并不构成对本发明保护范围的限制。本领域技术人员应该明白的是，取决于设计要求和其他因素，可以发生各种各样的修改、组合、子组合和替代。任何在本发明的精神和原则之内所作的修改、等同替换和改进等，均应包含在本发明保护范围之内。

Claims (15)

  1. 一种体声波谐振器，包括由下至上依次排列的基底、声学镜结构、下电极、压电薄膜结构、上电极，其特征在于，所述上电极和/或下电极的上表面和/或下表面具有附属结构，所述附属结构在垂直于上电极表面的方向上具有凸起或凹陷。
  2. 根据权利要求1所述的体声波谐振器，其特征在于，所述凸起高度或所述凹陷深度范围为
    Figure PCTCN2018124081-appb-100001
    至
    Figure PCTCN2018124081-appb-100002
  3. 根据权利要求1所述的体声波谐振器，其特征在于，所述附属结构的凸起或凹陷的分布形式具有如下特征：具有最小晶胞结构，所述晶胞沿直线轨迹进行平面分布，且每个所述晶胞在至少两个不同方向上呈周期性分布。
  4. 根据权利要求3所述的体声波谐振器，其特征在于，所述晶胞具有一个中心圆形和三个周边圆形，且三个周边圆形和中心圆形由三个棒状结构相连接，所述晶胞沿中心圆圆心和三个周边圆圆心的三个连心线方向进行周期分布。
  5. 根据权利要求3所述的体声波谐振器，其特征在于，所述晶胞具有一个中心圆形和六个平均地放射状分布的相同棒状结构，所述晶胞沿所述六个棒状结构所在的三条直线方向进行周期分布。
  6. 根据权利要求1所述的体声波谐振器，其特征在于，所述附属结构的凸起或凹陷的分布形式具有如下特征：具有最小晶胞结构，所述晶胞沿同心封闭曲线迹进行平面分布。
  7. 根据权利要求1所述的体声波谐振器，其特征在于，所述附属结构的凸起或凹陷的分布形式具有如下特征：具有最小晶胞结构，所 述晶胞沿同心封闭曲线的轨迹进行平面分布。
  8. 根据权利要求1所述的体声波谐振器，其特征在于，所述同心封闭曲线为同心圆。
  9. 根据权利要求1所述的体声波谐振器，其特征在于，所述附属结构的凸起或凹陷的分布形式具有如下特征：具有最小晶胞结构，所述晶胞沿螺旋曲线或螺旋折线的轨迹进行平面分布。
  10. 根据权利要求3至9中任一项所述的体声波谐振器，其特征在于，所述附属结构的凸起或凹陷的分布形式中，所述晶胞存在预设规律性的缺失。
  11. 根据权利要求3至9中任一项所述的体声波谐振器，其特征在于，所述附属结构的图形的占空比的取值范围为5％-95％。
  12. 根据权利要求1所述的体声波谐振器，其特征在于，所述基底材料包括：单晶硅、砷化镓、石英或者蓝宝石。
  13. 根据权利要求1所述的体声波谐振器，其特征在于，所述上电极和所述下电极的材料包括：钼、钌、金、铝、镁、钨、铜，钛、铱、锇、铬或以上金属的复合或其合金。
  14. 根据权利要求1所述的体声波谐振器，其特征在于，所述附属结构的材料包括：二氧化硅、氮化铝、氮化硅、碳化硅、多聚物、钼、钌、金、铝、镁、钨、铜，钛、铱、锇、铬或以上金属的复合或其合金。
  15. 根据权利要求1所述的体声波谐振器，其特征在于，所述压电层的材料包括：氮化铝、氧化锌、钛锆酸铅、掺杂氮化铝、掺杂氧 化锌，所述压电层掺杂有如下元素中的一种或多种：钪、钇、镁、钛、镧、铈、镨、钕、钷、钐、铕、钆、铽、镝、钬、铒、铥、镱、镥。
PCT/CN2018/124081 2018-12-26 2018-12-26 体声波谐振器 Ceased WO2020133000A1 (zh)

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US20220075214A1 (en) * 2020-09-10 2022-03-10 Ii-Vi Delaware, Inc. Electro-optic modulator utilizing copper-tungsten electrodes for improved thermal stability
EP4322406A4 (en) * 2021-04-30 2025-04-30 Huawei Technologies Co., Ltd. RESONATOR AND ELECTRONIC COMPONENT

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CN107733396A (zh) * 2016-08-12 2018-02-23 三星电机株式会社 体声波谐振器
CN207603582U (zh) * 2017-11-17 2018-07-10 杭州左蓝微电子技术有限公司 具有疏水防粘连结构的薄膜体声波谐振器

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US20220075214A1 (en) * 2020-09-10 2022-03-10 Ii-Vi Delaware, Inc. Electro-optic modulator utilizing copper-tungsten electrodes for improved thermal stability
US11640075B2 (en) * 2020-09-10 2023-05-02 Ii-Vi Delaware, Inc. Electro-optic modulator utilizing copper-tungsten electrodes for improved thermal stability
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US11809028B2 (en) * 2020-09-10 2023-11-07 Ii-Vi Delaware, Inc. Electro-optic modulator utilizing copper-tungsten electrodes for improved thermal stability and method of forming the same
EP4322406A4 (en) * 2021-04-30 2025-04-30 Huawei Technologies Co., Ltd. RESONATOR AND ELECTRONIC COMPONENT

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