WO2020124942A1 - 一种皮秒-纳秒激光复合异步抛光陶瓷的工艺方法 - Google Patents

一种皮秒-纳秒激光复合异步抛光陶瓷的工艺方法 Download PDF

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WO2020124942A1
WO2020124942A1 PCT/CN2019/086937 CN2019086937W WO2020124942A1 WO 2020124942 A1 WO2020124942 A1 WO 2020124942A1 CN 2019086937 W CN2019086937 W CN 2019086937W WO 2020124942 A1 WO2020124942 A1 WO 2020124942A1
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laser
picosecond
micro
polishing
ceramic
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季凌飞
张熙民
王文豪
燕天阳
马瑞
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Beijing University of Technology
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/352—Working by laser beam, e.g. welding, cutting or boring for surface treatment
    • B23K26/354—Working by laser beam, e.g. welding, cutting or boring for surface treatment by melting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/0006—Working by laser beam, e.g. welding, cutting or boring taking account of the properties of the material involved
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/0604—Shaping the laser beam, e.g. by masks or multi-focusing by a combination of beams
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/062—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
    • B23K26/0622—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
    • B23K26/0624—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses using ultrashort pulses, i.e. pulses of 1 ns or less
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/062—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
    • B23K26/0626—Energy control of the laser beam
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/08—Devices involving relative movement between laser beam and workpiece
    • B23K26/082—Scanning systems, i.e. devices involving movement of the laser beam relative to the laser head
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/60—Preliminary treatment
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/50—Inorganic materials other than metals or composite materials
    • B23K2103/52—Ceramics

Definitions

  • the invention relates to the field of laser polishing of the surface of ceramic materials, in particular to a sub-micron level high-precision laser compound polishing processing method of an alumina ceramic surface.
  • Engineering ceramics are mainly made of alumina (Al 2 O 3 ) and zirconia (ZrO 2 ), and are used for thick film integrated circuits and ceramic structural parts.
  • Alumina, zirconia and other engineering ceramics have good conductivity, mechanical strength and high temperature resistance. It is a ceramic with a wide range of uses. Because of its superior performance, it has been more and more widely used in modern society and is satisfied with Japan. Use and special performance needs.
  • the conventional mechanical polishing method for ceramic materials has a long processing time and low processing efficiency, and most of the mechanical processing is contact processing, which is easy to cause mechanical damage, subsurface cracks and other defects on the ceramic surface. At the same time, mechanical processing is limited due to its processing principle.
  • High-precision three-dimensional surface polishing laser polishing as a non-contact processing method will not produce compressive stress on the surface of the workpiece, high processing efficiency, high processing freedom, and low requirements on the processing environment.
  • the conventional laser polishing process mostly uses medium-long pulse thermal polishing.
  • Thermal polishing uses the thermal effect of laser to remove material through the process of melting and evaporation of the substrate. The method has a large heat affected area, and obvious thermal cracks and ablation , Not conducive to the processing of hard and brittle materials.
  • Chinese invention patent 201710651327.9 and Chinese invention patent 201710652088.9 use excimer laser polishing ceramics, using the principles of ablation and vaporization to polish the ceramics, the roughness Ra after polishing decreases from 0.94 ⁇ m to 0.91 ⁇ m, the roughness reduction rate is about 4%, rough The degree of decrease is not obvious, and the original ceramics are already fine ceramics with a surface roughness of submicron level.
  • Dimitris Karnakis uses a single 1064nm picosecond laser to reduce the surface roughness of alumina ceramic materials through multiple scanning irradiation schemes.
  • the surface roughness after polishing is 1.4 ⁇ m, which does not reach sub-micron accuracy, and the single ultra-fast laser polishing is essentially micro removal of the material, so it is difficult to ceramic materials Effectively repair the original defects such as pores and cracks.
  • This scheme adopts the composite asynchronous polishing process of picosecond laser and nanosecond laser, which realizes the fine polishing of ceramic materials under the premise of little material removal and no damage to the surface morphology of the material.
  • the picosecond laser is used to irradiate the ceramic material. While the microscopic convex parts of the ceramic surface are initially flattened, the microsecond nanoparticles with high surface activity are generated by the picosecond laser's mechanism for removing the electronic state of the material.
  • Low energy density nanosecond laser irradiates and melts these highly surface-active micro-nano particles, which is very easy to form a dense and smooth fine-crystalline fused layer.
  • the method overcomes the generation of micro-cracks and pores on the surface of the material in the traditional laser polishing process, and realizes laser fine polishing without destroying the surface geometry of the material and with a very low material removal amount.
  • the present invention provides a picosecond-nanosecond laser composite asynchronous
  • the technical scheme of polishing ceramics can effectively overcome the above-mentioned problems and achieve a high-precision sub-micron polishing effect without destroying the surface geometry of the material.
  • the present invention provides a technical solution for picosecond-nanosecond laser composite asynchronous polishing ceramics, and its technical solution is as follows:
  • the nanosecond laser starts the nanosecond laser after the time interval t.
  • the nanosecond laser follows the picosecond laser scanning path at the same scanning speed to track and irradiate the micro-nano particles produced by the picosecond laser action. After irradiation, the micro-nano particles melt and A dense and smooth fused layer of fine crystals is produced to cover the surface of the ceramic, and the polishing is finally completed.
  • the nanosecond laser energy density is between the melting threshold and the vaporization threshold of the nanosecond laser to the ceramic micro-nano particles and is guaranteed to be lower than the melting threshold of the ceramic substrate.
  • Set the nanosecond laser average power to 3W ⁇ 15W, repetition frequency 50KHz ⁇ 100KHz.
  • the picosecond laser is irradiated with zero defocus scanning
  • the nanosecond laser is irradiated with positive defocus tracking, with a defocus amount of 0.01 mm to 1 mm.
  • the time interval t for starting the picosecond laser and the nanosecond laser is set by a controller, where t is the picosecond laser action point, the nanocluster explosion delays the sputtering time, and the nanocluster aggregates to grow into micro-nano
  • the sum of the particle time and the micro-nano particle spatial redistribution time, t is 50 ⁇ s to 500 ⁇ s.
  • a computer is used to plan the picosecond laser scanning path, setting the picosecond laser scanning speed to 300 mm/s to 1000 mm/s, and the scanning path gap to 0.01 mm to 0.5 mm.
  • the present invention as a picosecond laser and nanosecond laser compound polishing process method, is different from the conventional single laser polishing and double beam laser polishing processes.
  • the present invention is an asynchronous combination of the picosecond laser removal mechanism and the nanosecond laser thermal action mechanism.
  • the picosecond laser scanning irradiation is used to remove the micro-bumps on the surface of the ceramic material.
  • the mechanism is that the absorption of the picosecond laser by the ceramic material causes enough conduction band electrons to deposit inside and break through the critical plasma density. , A Coulomb explosion occurred, causing damage and removal of the material.
  • the picosecond laser is used to remove the electronic state of the ceramic material, resulting in micro-nano particles with high surface activity.
  • the low-power nanosecond laser is used to track and irradiate the uniformly distributed micro-nano particles. Due to the large surface activity of the micro-nano particles and the low melting point, the laser energy density required for melting is much lower than that of the ceramic substrate.
  • the photo will only cause the melting of the micro-nano particles, but will not have a significant thermal effect on the ceramic substrate.
  • These micro-nano particles with high surface activity which are homogeneous with the ceramic substrate, are melted by nanosecond laser, and finally form a dense and The smooth fused layer covers the surface of the substrate, eliminating the original micro-cracks and pores of the ceramic material.
  • the present invention effectively utilizes a part of the material whose ceramic surface is removed by preliminary flattening during the picosecond laser irradiation to form micro-nano particles to make it re-melt to cover the surface of the ceramic material, so the amount of material removal is extremely low.
  • the present invention also effectively controls the time interval between the two laser actions.
  • the crystal grains in the fine crystal fused layer generated by the nanosecond laser heat action are more fine, The organization is denser, the distribution is more uniform, and the mechanical properties are good.
  • the two laser action processes are indispensable and the order cannot be changed.
  • the laser used in the present invention is not limited to picosecond laser and nanosecond laser. Any ultrafast laser and medium-long pulse laser that conform to the mechanism of the present invention are within the scope of the present invention.
  • Figure 1a is a microscopic schematic view of the surface of a ceramic material (the microscopic surface is uneven).
  • Fig. 1b is a schematic diagram of picosecond laser irradiation for removing ceramic materials and exciting micro-nano particle sputtering.
  • Figure 1c is a schematic diagram of nanosecond laser irradiation melting micro-nano particles.
  • FIG. 1d is a schematic diagram of forming a smooth fused layer after polishing.
  • FIG. 2 is a diagram of the original surface morphology of the surface of the ceramic material and the surface morphology after polishing in Example 1.
  • FIG. 2 is a diagram of the original surface morphology of the surface of the ceramic material and the surface morphology after polishing in Example 1.
  • FIG. 3 is a diagram of the original surface morphology of the surface of the ceramic material and the surface morphology after polishing in Example 2.
  • To polish a 95% alumina ceramic substrate first use an average power of 60W, a repetition frequency of 100,000KHz, a picosecond laser with a defocus of 0 to start scanning irradiation, a scanning speed of 400mm/s, and a scanning path gap of 0.05mm. It is used to remove the microscopic surface protrusion of the material and stimulate the sputtering of micro-nano particles. After 50 ⁇ s, start the average power 5W, repetition frequency 100KHz, defocus amount +0.3mm nanosecond laser tracking picosecond laser scanning path irradiation at the same speed, used to melt the micro-nano particles produced by picosecond laser irradiation, Make it produce a layer of uniform and dense fine-crystalline fused layer.
  • To polish the zirconia ceramic substrate first use an average power of 30W, a repetition frequency of 50000KHz, a picosecond laser with a defocus of 0 to start scanning irradiation, a scanning speed of 1000mm/s, and a scanning path gap of 0.01mm. , Used to remove the microscopic surface protrusions of the material and stimulate the sputtering of micro-nano particles. After 50 ⁇ s, start the average power 3W, repetition frequency 50KHz, defocus amount +0.5mm nanosecond laser tracking picosecond laser scanning path irradiation at the same speed, used to melt the micro-nano particles produced by picosecond laser irradiation, so It produces a uniform and dense layer of fine-crystalline fused layer.
  • To polish the aluminum nitride ceramic substrate first use an average power of 55W, a repetition frequency of 100,000KHz, a picosecond laser with a defocus of 0 to start scanning irradiation, a scanning speed of 300mm/s, and a scanning path gap of 0.5mm. It is used to remove the microscopic surface protrusion of the material and stimulate the sputtering of micro-nano particles. After 100 ⁇ s, start the average power 14W, repetition frequency 100KHz, defocus amount +0.1mm nanosecond laser tracking picosecond laser scanning path irradiation at the same speed, used to melt the micro-nano particles produced by picosecond laser irradiation, so It produces a uniform and dense layer of fine-crystalline fused layer. After finishing the polishing process, it was taken out from the processing platform and tested with a laser confocal microscope. The roughness Ra was reduced from the original 1.81 ⁇ m to 0.65 ⁇ m.

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  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Laser Beam Processing (AREA)

Abstract

一种皮秒-纳秒激光复合异步抛光陶瓷的工艺方法，首先采用皮秒激光沿一定扫描轨迹对陶瓷待加工表面进行辐照，对陶瓷表面微观凸起进行去除，实现初步平坦化，同时利用皮秒激光对陶瓷材料电子态的去除诱导产生大量微纳米颗粒，以电离态存在于被辐照陶瓷表面的邻近空间区域。按预设时间启动小功率纳秒激光追踪皮秒激光扫描路径，对陶瓷表面均匀分布的微纳米颗粒进行辐照熔融，最终形成一层致密光滑的细晶熔凝层以达到抛光效果。该方法修复了陶瓷材料原始的气孔裂纹，克服了传统激光抛光产生热影响区大，材料表面易产生微裂纹和气孔的缺点，实现了陶瓷材料低去除量，高效率高精度亚微米级别的精细抛光。

Description

一种皮秒-纳秒激光复合异步抛光陶瓷的工艺方法 技术领域
本发明涉及陶瓷材料表面的激光抛光领域，尤其涉及氧化铝陶瓷表面的亚微米级别的高精激光复合抛光加工方法。
技术背景
工程陶瓷以氧化铝(Al 2O 3)、氧化锆(ZrO 2)为主体的陶瓷材料，用于厚膜集成电路和陶瓷结构件。氧化铝、氧化锆等工程陶瓷有较好的传导性、机械强度和耐高温性，是一种用途广泛的陶瓷，因为其优越的性能，在现代社会的应用已经越来越广泛，满足于日用和特殊性能的需要。但是针对陶瓷材料常规的机械抛光方法加工时间长，加工效率低，且机械加工多为接触式加工易对陶瓷表面产生机械损伤，次表面裂纹等缺陷，同时机械加工受限于其加工原理难以实现高精度三维立体件的表面抛光，激光抛光作为一种非接触式的加工方式不会对工件表面产生压应力，加工效率高，加工自由度高，且对加工环境要求不高。目前常规激光抛光工艺多采用中长脉冲热抛光，热抛光是利用激光的热效应,通过对基材的熔化、蒸发等过程去除材料，该方法产生的热影响区较大，热裂纹和烧蚀明显，不利于硬脆材料加工。中国发明专利201710651327.9和中国发明专利201710652088.9采用准分子激光抛光陶瓷，利用烧蚀和汽化原理对陶瓷进行抛光，抛光后粗糙度Ra由0.94μm下降到0.91μm，粗糙度降低率约为4％，粗糙度降低不明显，且原有陶瓷已属于表面粗糙度在亚微米级的精细陶瓷。Dimitris Karnakis利用单一的1064nm皮秒激光通过多次扫描辐照的方案对氧化铝陶瓷材料进行表面粗糙度的降低，随着加工深度增大粗糙度降低，但该方法属于激光铣削工艺，需要很大的铣削深度，彻底改变材料原始表面形貌，不属于精细抛光(Karnakis D,Rutterford G,Knowles M,et al.Laser micro-milling of ceramics,dielectrics and metals using nanosecond and picosecond lasers[J].Proceedings of SPIE-The International Society for Optical Engineering,2006,6106.)。中国发明专利 201810785012.8利用飞秒激光抛光陶瓷基复合材料，其抛光后表面粗糙度为1.4μm，没有达到亚微米级精度，且单一的超快激光抛光本质为材料的微去除，因此难以对陶瓷材料原始气孔、裂纹等缺陷进行有效修复。本方案采用皮秒激光与纳秒激光复合异步抛光工艺，实现了在几无材料表面去除量，不破坏材料表面形貌前提下的陶瓷材料精细抛光。先采用皮秒激光对陶瓷材料进行辐照，在对陶瓷表面微观凸起部分实现初步平坦化的同时，利用皮秒激光对材料电子态的去除机制产生具有高表面活性的微纳米颗粒，之后采用低能量密度纳秒激光对这些高表面活性的微纳米颗粒进行辐照熔融，极易形成一层致密光滑的细晶熔凝层，同时根据颗粒产生和长大机制，要对两次抛光的时间差进行合理控制。本方法克服了传统激光抛光过程中材料表面微裂纹和气孔的产生，实现不破坏材料表面几何形貌、极低材料去除量下的激光精细抛光。
发明内容
针对现有陶瓷材料抛光工艺技术中易产生微裂纹和气孔、热/机械应力影响区大、材料去除量多及表面形貌易破坏等问题，本发明提供一种皮秒-纳秒激光复合异步抛光陶瓷技术方案，有效克服上述存在的问题，实现不破坏材料表面几何形貌的高精亚微米级抛光效果。
1.为实现上述目的，本发明提供一种皮秒-纳秒激光复合异步抛光陶瓷的技术方案，其工艺方案如下：
(1)首先利用皮秒激光沿扫描路径对需要处理的陶瓷表面进行扫描辐照。经皮秒激光的辐照，陶瓷表面微观凸起部分被去除实现初步平坦化，同时产生具有高表面活性的微纳米颗粒分布在辐照后表面。其中皮秒激光的辐照能量密度高于皮秒激光对陶瓷基材去除阈值的50％～300％。设置皮秒激光的平均功率为30～70W，重复频率10000KHz～100000KHz。
(2)在时间间隔t后启动纳秒激光，纳秒激光沿皮秒激光扫描路径以相同的扫描速度对皮秒激光作用产生的微纳米颗粒进行跟踪辐照，辐照后微纳米颗粒熔融并产生一层致密光滑的细晶熔凝层覆在陶瓷表面，最终完成抛光。 其中纳秒激光能量密度介于纳秒激光对陶瓷微纳米颗粒熔化阈值和汽化阈值之间同时保证低于陶瓷基材熔化阈值。设置纳秒激光平均功率为3W～15W，重复频率50KHz～100KHz。
2.作为本发明的进一步改进，上述皮秒激光采用零离焦扫描辐照，纳秒激光采用正离焦跟踪辐照，离焦量为0.01mm～1mm。
3.作为本发明的进一步改进，利用控制器设置皮秒激光和纳秒激光启动的时间间隔t，t为皮秒激光作用点纳米团簇爆炸延迟溅射时间和纳米团簇聚集生长成微纳米颗粒时间以及微纳米颗粒空间再分布时间的总和，t为50μs～500μs。
4.作为本发明的进一步改进，利用计算机对皮秒激光扫描路径规划，设置皮秒激光扫描速度为300mm/s～1000mm/s，扫描路径间隙为0.01mm～0.5mm。
与现有技术相比，本发明的有益效果为：
本发明作为一种皮秒激光和纳秒激光复合抛光工艺方法，不同于常规单激光抛光和双光束激光抛光工艺，本发明是将皮秒激光去除机理与纳秒激光热作用机理有机结合的异步抛光工艺，首先抛光利用皮秒激光扫描辐照，对陶瓷材料表面微凸起进行去除，其机制为陶瓷材料对皮秒激光的吸收引起足够的导带电子在内部沉积并突破临界等离子体密度后，发生库伦爆炸，造成对材料的破坏去除。去除的同时伴随着等离子体的膨胀和冷凝而溅射出大量团簇，团簇聚集形成微纳米级别的陶瓷颗粒。该过程无明显的热影响区，可以实现陶瓷表面初步平坦化，同时更为重要的是，利用皮秒激光对陶瓷材料电子态的去除机制，产生了具有高表面活性的微纳米颗粒。其次利用小功率纳秒激光对均匀分布的微纳米颗粒进行跟踪辐照熔融，由于微纳米颗粒表面活性大，熔点低，熔融所需的激光能量密度远低于陶瓷基材，因此纳米激光的辐照只会引起微纳米颗粒的熔融，而不会对陶瓷基材产生明显热影响，这些与陶瓷基材同质的具有高表面活性的微纳米颗粒经纳秒激光熔融，最终形成一层致密且光滑的熔凝层覆盖在基材表面，消除了陶瓷材料原始的微裂纹和气孔。本发明有效利用皮秒激光辐照过程中陶瓷表面被初步平坦化去除的 部分材料形成微纳米颗粒，使其重新熔凝覆盖陶瓷材料表面，因此材料去除量极低。同时根据微纳米颗粒产生和生长时间，本发明还对两次激光作用的时间间隔进行有效的控制，在该时间间隔段内纳秒激光热作用产生的细晶熔凝层中晶粒更加细小，组织更加致密，分布更加均匀，力学性能良好。本发明中两次激光作用过程缺一不可，不可更换次序。本发明中所用激光不仅限于皮秒激光和纳秒激光，凡是符合本发明作用机理的超快激光和中长脉冲激光均在本发明保护范围之内。
附图说明
图1a为陶瓷材料表面微观示意图(微观表面呈现凹凸不平)。
图1b为皮秒激光辐照去除陶瓷材料和激发微纳米颗粒溅射示意图。
图1c为纳秒激光辐照熔融微纳米颗粒示意图。
图1d为抛光完成后形成光滑熔凝层示意图。
图2为实施例1中陶瓷材料表面原始形貌图和抛光后表面形貌图。
图3为实施例2中陶瓷材料表面原始形貌图和抛光后表面形貌图。
具体实施方式
下面结合附图2、3对本发明的具体实施方式作进一步详细描述。
实施例1:
对95％氧化铝陶瓷基板进行抛光，首先使用平均功率60W，重复频率100000KHz，离焦量为0的皮秒激光开始扫描辐照，扫描速度为400mm/s，扫描路径间隙为0.05mm。用于去除材料微观表面凸起和激发微纳米颗粒的溅射。50μs后启动平均功率5W，重复频率100KHz，离焦量为+0.3mm的纳秒激光跟踪皮秒激光扫描路径以相同的速度进行辐照，用于熔融皮秒激光辐照产生的微纳米颗粒，使其产生一层均匀致密的细晶熔凝层。所用抛光过程结束后从加工平台取出，利用激光共聚焦显微镜对其表面微观形貌测试，粗糙度Ra由原始的1.70μm下降为0.68μm，抛光前后表面三维形貌如附图2所示。
实施例2：
对氧化锆陶瓷基板进行抛光，首先使用平均功率30W，重复频率 50000KHz，离焦量为0的皮秒激光开始扫描辐照，扫描速度为1000mm/s，扫描路径间隙为0.01mm。，用于去除材料微观表面凸起和激发微纳米颗粒的溅射。50μs后启动平均功率3W，重复频率50KHz，离焦量为+0.5mm的纳秒激光跟踪皮秒激光扫描路径以相同速度进行辐照，用于熔融皮秒激光辐照产生的微纳米颗粒，使其产生一层均匀致密的细晶熔凝层。所用抛光过程结束后从加工平台取出，利用激光共聚焦显微镜对其表面微观形貌测试，粗糙度Ra由原始的1.30μm下降为0.52μm，抛光前后表面三维形貌如附图3所示。
实施例3：
对氮化铝陶瓷基板进行抛光，首先使用平均功率55W，重复频率100000KHz，离焦量为0的皮秒激光开始扫描辐照，扫描速度为300mm/s，扫描路径间隙为0.5mm。用于去除材料微观表面凸起和激发微纳米颗粒的溅射。100μs后启动平均功率14W，重复频率100KHz，离焦量为+0.1mm的纳秒激光跟踪皮秒激光扫描路径以相同速度进行辐照，用于熔融皮秒激光辐照产生的微纳米颗粒，使其产生一层均匀致密的细晶熔凝层。所用抛光过程结束后从加工平台取出，利用激光共聚焦显微镜对其表面微观形貌测试，粗糙度Ra由原始的1.81μm下降为0.65μm。
以上仅为本发明的优选实施例而已，并不用于限制本发明，对于本领域的技术人员来说，本发明可以有各种更改和变化。凡在本发明的精神和原则之内，所作的任何修改、等同替换、改进等，均应包含在本发明的保护范围之内。

Claims (4)

  1. 一种皮秒-纳秒激光复合异步抛光陶瓷的工艺方法，其特征在于：
    (1)首先利用皮秒激光沿扫描路径对需要处理的陶瓷表面进行扫描辐照；经皮秒激光的辐照，陶瓷表面微观凸起部分被去除实现初步平坦化，同时产生具有高表面活性的微纳米颗粒分布在辐照后表面；其中皮秒激光的辐照能量密度高于皮秒激光对陶瓷基材去除阈值的50％～300％；设置皮秒激光的平均功率为30～70W，重复频率10000KHz～100000KHz；
    (2)在时间间隔t后启动纳秒激光，t为50μs～500μs；纳秒激光沿皮秒激光扫描路径以相同的扫描速度对皮秒激光作用产生的微纳米颗粒进行跟踪辐照，辐照后微纳米颗粒熔融并产生一层致密光滑的细晶熔凝层覆在陶瓷表面，最终完成抛光；其中纳秒激光能量密度介于纳秒激光对陶瓷微纳米颗粒熔化阈值和汽化阈值之间同时保证低于陶瓷基材熔化阈值；设置纳秒激光平均功率为3W～15W，重复频率50KHz～100KHz。
  2. 根据权利要求1所述皮秒-纳秒激光复合异步抛光陶瓷的工艺方法，其特征在于，皮秒激光采用零离焦扫描辐照，纳秒激光采用正离焦跟踪辐照，离焦量为0.01mm～1mm。
  3. 根据权利要求1所述皮秒-纳秒激光复合异步抛光陶瓷的工艺方法，其特征在于，利用控制器设置皮秒激光和纳秒激光启动的时间间隔t。
  4. 根据权利要求1所述皮秒-纳秒激光复合异步抛光陶瓷的工艺方法，其特征在于，利用计算机对皮秒激光扫描路径规划，设置皮秒激光扫描速度为300mm/s～1000mm/s，扫描路径间隙为0.01mm～0.5mm。
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