WO2020120312A1 - Décharge d'un condensateur de circuit intermédiaire d'un onduleur au moyen d'impulsions de court-circuit de pont - Google Patents

Décharge d'un condensateur de circuit intermédiaire d'un onduleur au moyen d'impulsions de court-circuit de pont Download PDF

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Publication number
WO2020120312A1
WO2020120312A1 PCT/EP2019/083967 EP2019083967W WO2020120312A1 WO 2020120312 A1 WO2020120312 A1 WO 2020120312A1 EP 2019083967 W EP2019083967 W EP 2019083967W WO 2020120312 A1 WO2020120312 A1 WO 2020120312A1
Authority
WO
WIPO (PCT)
Prior art keywords
short
circuit
power semiconductor
circuit current
control device
Prior art date
Application number
PCT/EP2019/083967
Other languages
German (de)
English (en)
Inventor
Martin Trunk
Manfred Kirschner
Original Assignee
Robert Bosch Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Robert Bosch Gmbh filed Critical Robert Bosch Gmbh
Publication of WO2020120312A1 publication Critical patent/WO2020120312A1/fr

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Classifications

    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/32—Means for protecting converters other than automatic disconnection
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
    • H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
    • H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
    • H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M7/53—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
    • H02M7/537—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters
    • H02M7/5387—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters in a bridge configuration
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/32—Means for protecting converters other than automatic disconnection
    • H02M1/322—Means for rapidly discharging a capacitor of the converter for protecting electrical components or for preventing electrical shock

Definitions

  • the present invention relates to an inverter arrangement
  • Inverter arrangement for discharging an intermediate circuit capacitor.
  • Hybrid vehicles are used, can include inverters that generate voltage signals from an electrical DC voltage, which are used for
  • a DC intermediate circuit with an intermediate circuit capacitor is provided at the input of such an inverter.
  • the inverters can be designed, for example, as a bridge circuit with a predetermined number of bridge branches, each with two power semiconductors.
  • the bridge circuit is supplied with an intermediate circuit voltage, i.e. a DC voltage with a high potential, which is referred to as a high DC voltage potential, and a low potential, which is referred to as a low DC voltage potential, and with a load, in particular an electrical machine.
  • Each bridge branch has two power semiconductors, which are connected in series to each other.
  • the load is connected to the bridge arm between the two power semiconductors.
  • One of the power semiconductors is therefore a so-called highside Power semiconductors and the other power semiconductor is a so-called low-side power semiconductor.
  • Parallel to the two power semiconductors is one
  • Inverter arrangement must quickly and reliably discharge the intermediate circuit capacitor.
  • Discharge of the intermediate circuit capacitor is usually implemented by means of a discharge resistor or by means of a so-called contacting.
  • a power semiconductor comprises an inflow electrode, an outflow electrode and a gate electrode, via which the connection between the inflow electrode and the outflow electrode is controlled.
  • Power semiconductor is the application of a gate voltage
  • Drain electrode is idling.
  • the gate voltage When switching on, the gate voltage is now applied to one of the power semiconductors (for example the low-side power semiconductor) of the bridge circuit only very briefly, while the other power semiconductor (for example the high-side power semiconductor) is switched on, the power semiconductor not reaching the saturation range. Nevertheless, a short-circuit current builds up through the power semiconductor. The very brief application of the gate voltage is repeated quickly in succession. This allows the
  • the switch-off overvoltage is usually measured and the short-circuit current is determined therefrom in order to determine the switch-on time of the subsequent switching pulse.
  • This function needs one Information storage and high-resolution processing, especially by a microprocessor.
  • the entire PEU (Power Electronics Unit) must be active so that the starting can be implemented. If terminal 30 supply is omitted, this means, for example, a significant effort for the voltage supply, since the low voltage side must be supplied from the high voltage.
  • an inverter arrangement according to claim 1 a drive system for an electrical machine according to claim 6, a vehicle with an inverter arrangement according to claim 7 and a control method for an inverter arrangement according to claim 8.
  • the invention relates to an inverter arrangement, comprising an
  • Bridge circuit comprising at least a first power semiconductor, preferably a highside power semiconductor, and a second
  • Power semiconductors preferably a low-side power semiconductor, which are connected in series with one another, an intermediate circuit capacitor which is connected in parallel with the first power semiconductor and the second power semiconductor, and a control device which is set up to control the first power semiconductor and the second power semiconductor.
  • the second power semiconductor has a connection, preferably an inflow connection or outflow connection, on which a short-circuit current measuring device is arranged, which is set up to measure a short-circuit current of the bridge circuit.
  • the control device is set up based on the measured
  • Short-circuit current to detect a short circuit in the bridge circuit and to discharge the intermediate circuit capacitor by contacting the first power semiconductor based on the detection of the short circuit.
  • the first power semiconductor is referred to below as a highside power semiconductor and the second power semiconductor as a low-side power semiconductor for better understanding designated.
  • the highside power semiconductor is the one with the high one
  • Power semiconductors connected to direct voltage potential and the low-side power semiconductor is the power semiconductor connected to the low direct voltage potential. Nevertheless, this assignment can also be interchanged, so that the first power semiconductor is a low-side power semiconductor and the second power semiconductor is a high-side power semiconductor. Likewise, if the assignment of the first and second power semiconductors is interchanged, the assignment of the
  • control device is able to implement the clocking in such a way that the clocking power semiconductor, the high-side power semiconductor, by measuring and evaluating what flows in the power path, ie the path through one or more power semiconductors
  • power semiconductor includes the terms power switch and semiconductor switch.
  • the power semiconductors are preferably IGBT transistors or metal oxide field-effect transistors (MOSFETs) or silicon carbide field-effect transistors (SiC-FETs).
  • MOSFETs metal oxide field-effect transistors
  • SiC-FETs silicon carbide field-effect transistors
  • the intermediate circuit voltage, the control device can control the starting directly based on the measured short-circuit current. Indirect
  • Control methods such as indirect readjustment of the short-circuit current, can be avoided.
  • the contacting preferably comprises more than 1000 pulses (switch-on and switch-off processes of the power semiconductor, in particular the highside power semiconductor), more preferably more than 10,000 pulses in a period of 0.2 to 2 seconds.
  • the length of a pulse is preferably between 1 and 20 nanoseconds. The number of pulses, the length of the pulse, and the time period depend on several factors such as the DC link voltage, the switching behavior or the
  • the short-circuit current measuring device preferably comprises one
  • the control device advantageously has a microcontroller. Due to the particularly simple design of the inverter arrangement and the particularly simple type of implementation of the contacting, a less complex microcontroller can be used.
  • the short-circuit current measuring device is advantageously set up to measure the short-circuit current with a time resolution of less than 1 microsecond.
  • Microsecond is referred to as a highly dynamic current measurement.
  • Short-circuit current measuring device advantageously an inductance and the short-circuit current measuring device is advantageously set up to measure a change in the short-circuit current via the inductance.
  • the inductance is advantageously a parasitic inductance in the power path, that is to say in the path through one or more power semiconductors.
  • control device In a preferred embodiment, the control device
  • the short circuit in the bridge circuit based on a gate voltage of the first power semiconductor, preferably of the highside power semiconductor, and the change in the short-circuit current.
  • control device can
  • the switching on and switching off that is to say the switching on of the first power semiconductor, preferably of the highside power semiconductor, is advantageously implemented by a set / reset flip-flop which is controlled by the control device.
  • control device can switch off the first power semiconductor, preferably the highside power semiconductor, after a predetermined time has elapsed, even if there is still no short circuit in the
  • the short-circuit current measuring device is advantageously set up to integrate and / or filter the change in the short-circuit current, preferably low-pass filters.
  • the invention further relates to a drive system for an electrical machine, comprising an inverter arrangement of the type described above.
  • the invention further relates to a vehicle comprising a
  • the invention further relates to a control method for an inverter arrangement for discharging an intermediate circuit capacitor, comprising the steps:
  • steps 1) to d) repeating steps 1) to d) in order to provide the function of contacting the first power semiconductor, preferably the highside power semiconductor, until the intermediate circuit capacitor is discharged.
  • a change in the short-circuit current at an inductance is advantageously carried out in step b)
  • control device in step c) detects the short circuit in the bridge circuit based on a gate voltage of the highside power semiconductor and the change in the short circuit current.
  • the change in the short-circuit current is advantageously integrated and / or filtered, preferably low-pass filtered, in step b).
  • FIG. 1 shows a circuit diagram of an inverter arrangement
  • FIG. 3 shows a diagram of various measured values over time in the case of a
  • Fig. 4 is a flowchart of the control method for a
  • Inverter arrangement for discharging a
  • FIG. 5 shows a vehicle with an inverter arrangement.
  • the bridge circuit 20 is designed as a half-bridge and comprises a high-side power semiconductor TI and a low-side power semiconductor T2, which are connected in series with one another.
  • An electric drive M preferably a phase connection of a multi-phase electrical machine, is connected to the inverter arrangement 10 between the highside power semiconductor TI and the low-side power semiconductor T2.
  • An intermediate circuit capacitor CZK is arranged in parallel with the bridge circuit 20.
  • the inverter arrangement 10 further comprises a control device 30 with a microprocessor 31, which is set up to control the high-side power semiconductor TI and the low-side power semiconductor T2.
  • the control device 30 controls the highside power semiconductor TI via a first gate driver GTH and the lowside power semiconductor T2 via a second gate driver GTL.
  • the first gate driver GTH has a first capacitance CI and the second gate driver GTL has a second capacitance C2.
  • the first capacity CI and the second capacitance C2 are backup capacitors that support the voltage supply of the respective gate drivers GTH, GTL.
  • the second gate driver GTL also has a low-side gate driver supply VI, which supplies the second gate driver GTL with voltage.
  • the second gate driver GTL is connected to the first gate driver GTH via a high-voltage diode D1.
  • the first gate driver GTH is supplied from the low-side gate driver supply VI via the high-voltage diode D1.
  • Such a method is referred to as a bootstrap method.
  • the inverter arrangement 10 further comprises a high-voltage battery HV, which supplies the inverter arrangement 10 with a high potential HV + and a low potential HV-.
  • HV high-voltage battery
  • the highside power semiconductor TI has a first inflow electrode SH, a first outflow electrode DH and a first gate electrode GH.
  • the low-side power semiconductor T2 has a second inflow electrode SL, a second one
  • Drain electrode DL Drain electrode DL and a second gate electrode GL.
  • Inlet electrode SH has the same potential as the second one
  • Drain electrode DL Drain electrode DL.
  • the electric drive M has the same potential.
  • the first drain electrode DH is connected to the high potential HV +.
  • a short-circuit current measuring device 40 is arranged between the second inflow electrode SL and the low potential HV-.
  • the short-circuit current measuring device 40 comprises a parasitic inductance LI in the power path, that is to say in the path through at least one
  • the inductance is arranged between the low-side power semiconductor and the low DC voltage potential.
  • the inductance can, however, in principle at any point in the
  • the short-circuit current measuring device 40 also includes one Low pass filter 41, which is the measured signal of the change in
  • Short-circuit current measuring device 40 an integrator 42, which is set up to integrate the low-pass filtered signal.
  • the integrated signal is forwarded to the control device 30.
  • the control device 30 comprises a comparator 32 for processing the integrated signal of the short-circuit current device 40
  • Comparator 32 can detect control device 30 whether there is a high highside gate voltage VGH, which preferably exceeds a predefinable first threshold value, and a large change, which preferably exceeds a predeterminable second threshold value, of short-circuit current di / dt. If this is the case, the control device 30 detects a short circuit.
  • the control device 30 is assigned a set-reset flip-flop 33 in order to implement the control of the first gate driver GT H.
  • the control device 30 controls the second gate driver GTL in such a way that a low-side gate voltage VGL is applied to the second gate electrode GL, which turns on the low-side power semiconductor T2.
  • the low-side power semiconductor T2 remains switched on for the duration of the starting.
  • the control device 30 additionally controls the first gate driver GTH in such a way that a high-side gate voltage VGH, which switches on the high-side power semiconductor TI, is present at the first gate electrode GH, a short-circuit current builds up in the power path. This short circuit is detected by the control device 30 as described above, and the control device 30 controls the first gate driver GTH in such a way that the first
  • Gate electrode GH no longer has a high-side gate voltage VGH.
  • This process is repeated several times and thus implements the described function of starting in order to discharge the intermediate circuit capacitor CZK.
  • the control device 30 switches off the highside power semiconductor TI not only when a short circuit has been detected, but also after a predetermined time has elapsed. Therefore, the output of the
  • Comparator 32 connected to the set-reset flip-flop 33, but the Output of the comparator 32, which indicates whether a short circuit has been detected or is linked to the signal of the control device 30 for switching off the highside power semiconductor TI due to the expiry of a predetermined time.
  • Fig. 2 shows a diagram during the complete discharge of the
  • the flip-flop output voltage VQ moves between a “high level”, in this example IV, for switching on the highside power semiconductor TI and a “low level”, in this example 0V, for switching off the highside power semiconductor TI. Due to a lack of resolution, the more than 1000 switching steps here turn out to be
  • FIG. 3 shows a diagram during only a single pulse of starting.
  • the set-reset flip-flop 33 has a set input, a reset input and an output, with the set voltage VFFS being present at the set input and the reset input at the
  • Reset voltage VFFR is present and the flip-flop output voltage VFFQ is present at the output.
  • the time window is approximately 30 nanoseconds wide.
  • the DC link capacitor voltage VZK remains almost constant with such a short time window.
  • a single pulse of starting does not have a major influence on the intermediate circuit capacitor voltage VZK.
  • the controller 30 controls the set voltage VFFS to IV, whereby the set-reset flip-flop 33 sets a flip-flop output voltage VFFQ - high output level from IV.
  • the high-side power semiconductor TI is thus switched on and moves from the blocking area into the saturation area.
  • a short-circuit current II begins to build up in the power path. This leads over the
  • Short-circuit current measuring device 40 to a rising reset voltage VFFR.
  • the short circuit is detected after a few nanoseconds and the reset voltage VFFR exceeds a limit value.
  • the set voltage VFFS and the flip-flop output voltage VFFQ fall back to the low level, in this example to 0V.
  • the high-side gate voltage VGH drops to 0V in this example.
  • the highside power semiconductor TI is now switched on.
  • the short-circuit current II then drops back to 0A. In this way, the intermediate circuit capacitor VZK is gradually discharged.
  • step a a high-side power semiconductor TI of a bridge circuit 20 is closed by a control device 30. Then in step b)
  • Short-circuit current measuring device 40 measured.
  • a short circuit in the bridge circuit 20 is detected by the control device 30 based on the measured short circuit current II.
  • the highside power semiconductor TI is opened by the control device 30 based on the detected short circuit.
  • Steps a) to d) represent a contact pulse. Steps a) to d) are thus repeated via loop e) until the function of contacting the highside power semiconductor TI is available until the intermediate circuit capacitor CZK is discharged .
  • FIG. 5 shows a vehicle 50 with an inverter arrangement 10.

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Inverter Devices (AREA)

Abstract

La présente invention concerne un agencement d'onduleur (10), comprenant un circuit en pont (20) comprenant au moins un semi-conducteur de puissance côté haut (T1) et un semi-conducteur de puissance côté bas (T2), qui sont montés en série, un condensateur de circuit intermédiaire (CZK) qui est monté en parallèle au semi-conducteur de puissance côté haut (T1) et au semi-conducteur de puissance côté bas (T2), et une unité de commande (30) qui est conçue pour commander le semi-conducteur de puissance côté haut (T1) et le semi-conducteur de puissance côté bas (T2). Le semi-conducteur de puissance côté bas (T2) comporte une borne d'amenée (SL), et un dispositif de mesure de courant de court-circuit (40) est disposé au niveau de la borne d'amenée (SL) et est conçu pour mesurer un courant de court-circuit du circuit en pont (20). L'unité de commande (30) est conçue pour détecter, sur la base du courant de court-circuit mesuré, un court-circuit dans le circuit en pont (20) et pour, sur la base de la détection du court-circuit, décharger le condensateur de circuit intermédiaire (CZK) par cadencement du semi-conducteur de puissance côté haut (T1).
PCT/EP2019/083967 2018-12-13 2019-12-06 Décharge d'un condensateur de circuit intermédiaire d'un onduleur au moyen d'impulsions de court-circuit de pont WO2020120312A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102018221593.6 2018-12-13
DE102018221593.6A DE102018221593A1 (de) 2018-12-13 2018-12-13 Wechselrichteranordnung und Steuerungsverfahren für eine Wechselrichteranordnung zum Entladen eines Zwischenkreiskondensators

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WO2020120312A1 true WO2020120312A1 (fr) 2020-06-18

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PCT/EP2019/083967 WO2020120312A1 (fr) 2018-12-13 2019-12-06 Décharge d'un condensateur de circuit intermédiaire d'un onduleur au moyen d'impulsions de court-circuit de pont

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WO (1) WO2020120312A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2024069363A1 (fr) * 2022-09-28 2024-04-04 Delphi Technologies Ip Limited Systèmes et procédés de détection de surintensité pour onduleur pour véhicule électrique

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102022205912A1 (de) * 2022-06-10 2023-12-21 Robert Bosch Gesellschaft mit beschränkter Haftung Verfahren und Vorrichtung zum Betreiben einer Leistungselektronik, Leistungselektronik

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012044847A (ja) * 2010-08-23 2012-03-01 Denso Corp モータ制御装置
US20130181731A1 (en) * 2012-01-13 2013-07-18 Takao Kanzaki Inverter
DE112011105295T5 (de) * 2011-05-31 2014-03-13 Toyota Jidosha Kabushiki Kaisha Fahrzeug und Steuerverfahren hierfür
JP2016226132A (ja) * 2015-05-29 2016-12-28 日立オートモティブシステムズ株式会社 電力変換装置
US20180337668A1 (en) * 2016-08-18 2018-11-22 Fuji Electric Co., Ltd. Semiconductor module, switching element selecting method used for semiconductor module, and chip designing method for switching element

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012044847A (ja) * 2010-08-23 2012-03-01 Denso Corp モータ制御装置
DE112011105295T5 (de) * 2011-05-31 2014-03-13 Toyota Jidosha Kabushiki Kaisha Fahrzeug und Steuerverfahren hierfür
US20130181731A1 (en) * 2012-01-13 2013-07-18 Takao Kanzaki Inverter
JP2016226132A (ja) * 2015-05-29 2016-12-28 日立オートモティブシステムズ株式会社 電力変換装置
US20180337668A1 (en) * 2016-08-18 2018-11-22 Fuji Electric Co., Ltd. Semiconductor module, switching element selecting method used for semiconductor module, and chip designing method for switching element

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2024069363A1 (fr) * 2022-09-28 2024-04-04 Delphi Technologies Ip Limited Systèmes et procédés de détection de surintensité pour onduleur pour véhicule électrique

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