WO2020114463A1 - 一种封装体及其制备方法 - Google Patents

一种封装体及其制备方法 Download PDF

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Publication number
WO2020114463A1
WO2020114463A1 PCT/CN2019/123375 CN2019123375W WO2020114463A1 WO 2020114463 A1 WO2020114463 A1 WO 2020114463A1 CN 2019123375 W CN2019123375 W CN 2019123375W WO 2020114463 A1 WO2020114463 A1 WO 2020114463A1
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Prior art keywords
chip
phosphor
wavelength
adhesive layer
layer
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PCT/CN2019/123375
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English (en)
French (fr)
Inventor
孙智江
王书昶
吴陆
Original Assignee
海迪科（南通）光电科技有限公司
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Priority claimed from CN201811495570.7A external-priority patent/CN109638005A/zh
Application filed by 海迪科（南通）光电科技有限公司 filed Critical 海迪科（南通）光电科技有限公司
Publication of WO2020114463A1 publication Critical patent/WO2020114463A1/zh
Priority to US17/339,944 priority Critical patent/US20210296294A1/en

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    • A—HUMAN NECESSITIES
    • A01—AGRICULTURE; FORESTRY; ANIMAL HUSBANDRY; HUNTING; TRAPPING; FISHING
    • A01G—HORTICULTURE; CULTIVATION OF VEGETABLES, FLOWERS, RICE, FRUIT, VINES, HOPS OR SEAWEED; FORESTRY; WATERING
    • A01G7/00—Botany in general
    • A01G7/04—Electric or magnetic or acoustic treatment of plants for promoting growth
    • A01G7/045—Electric or magnetic or acoustic treatment of plants for promoting growth with electric lighting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H01L22/22—Connection or disconnection of sub-entities or redundant parts of a device in response to a measurement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
    • H01L33/502—Wavelength conversion materials
    • H01L33/504—Elements with two or more wavelength conversion materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P60/00—Technologies relating to agriculture, livestock or agroalimentary industries
    • Y02P60/14—Measures for saving energy, e.g. in green houses

Definitions

  • the present application relates to the field of semiconductor optoelectronics and optics, in particular to an encapsulation body and a preparation method thereof.
  • the blue chip is used to excite the mixed phosphor, but the color rendering index and light efficiency brought by this are far from meeting the needs of high light efficiency and high color rendering index. Therefore, it is necessary to provide a new package to improve the color rendering index and light efficiency of the light source.
  • the technical problem mainly solved by the present application is to provide a package and a preparation method thereof, which can enable the package to have a higher color rendering index and ensure luminous efficiency.
  • a technical solution adopted by the present application is to provide a package including: a support; at least one first chip and at least one second chip, the first chip and the second The chip is located on one side surface of the support, and at least the top surface of the surface of the second chip is provided with a long-wavelength phosphor adhesive layer; an encapsulation layer covering the support is provided with the first chip and the On the side of the second chip, the first chip, the second chip, and the long-wavelength phosphor adhesive layer are located in the encapsulation layer; and the encapsulation layer is composed of a first wavelength without long-wavelength phosphor phosphor paste layer is formed, the phosphor peak wavelength within a first wavelength of the phosphor paste layer is less than. 1 L long wavelength red phosphor having a peak wavelength L.
  • Step S1 providing at least one first chip and at least one second chip, and At least the top surface of the surface of the second chip is provided with a long-wavelength phosphor adhesive layer;
  • Step S2 according to the color temperature requirements of the final package, set the ratio of the second chip to the total number of chips, and compare the selected number ratio
  • the corresponding color point coordinates of the second chip on the CIE chromaticity diagram are recorded as red dots (X1; Y1); the color point coordinates of the second chip on the CIE chromaticity diagram after comparing the selected number ratio are recorded as blue dots (X2; Y2);
  • Step S3 Pre-control of the color temperature: solidify the first chip and the second chip to the corresponding positions on the support; and light up to obtain the package corresponding to CIE after lighting up
  • the position of the color point on the chromaticity diagram is recorded as the mixing point (X3
  • a package including: a support; at least one first chip and at least one second chip, the first chip and the first Two chips are located on one side surface of the support, and at least the top surface of the second chip is provided with a blue phosphor adhesive layer; an encapsulation layer covering the support is provided with the first chip and On the side of the second chip, the first chip, the second chip, and the blue phosphor adhesive layer are located in the encapsulation layer; and the encapsulation layer is composed of the first phosphor wavelength subbing layer formed, the phosphor peak wavelength within the first wavelength phosphor glue. 1 L L greater than the peak wavelength of the blue phosphor in the blue phosphor paste layer.
  • this application uses multiple chip excitations with different peak wavelengths to take into account the excitation wavelengths of phosphors with different peak wavelengths, that is, short wavelength chip excitation can be achieved Wavelength phosphors, long-wavelength chips excite long-wavelength phosphors, and at the same time can avoid short-wavelength fluorescence generated by short-wavelength phosphors from re-absorbing long-wavelength phosphors and being reabsorbed; the best excitation wavelength to achieve the highest quantum efficiency, At the same time improve the light efficiency of the light source.
  • the package structure of this application uses multiple chips with different peak wavelengths.
  • the long-wavelength phosphor is packaged in the local range of the top and side of the chip using CSP or WLP technology. Very little short-wavelength and medium-wavelength fluorescence will irradiate long-wavelength phosphors, which can effectively avoid the secondary absorption of cyan, blue, and green fluorescence by long-wavelength phosphors. In particular, the excitation efficiency of cyan fluorescence is low, which can effectively reduce the secondary loss of cyan fluorescence, thereby improving the light efficiency and the color rendering index.
  • the long-wavelength chip used in this application excites the long wavelength Phosphors can get longer-wavelength red fluorescence, and short-wavelength chips can be used to excite cyan, blue, and green phosphors to get shorter-wavelength cyan, blue, and green fluorescence, which broadens the fluorescence band spectrum and further improves the color rendering index.
  • the color temperature can be changed by changing the ratio of blue and red chips in the light source.
  • FIG. 1 is a schematic view of the emission spectrum of an embodiment of a conventional white LED
  • FIG. 2 is a schematic structural diagram of an embodiment of a package according to this application.
  • FIG. 3 is a schematic structural diagram of another embodiment of a package according to this application.
  • FIG. 4 is a schematic structural view of an embodiment of the package excitation method in FIG. 2;
  • FIG. 6 is a schematic structural diagram of another embodiment of the package body of the present application.
  • FIG. 8 is a schematic structural view of an embodiment of the package excitation method in FIG. 6;
  • FIG. 9 is a schematic structural diagram of another embodiment of the package of this application.
  • FIG. 10 is a schematic structural view of another embodiment of the package of this application.
  • FIG. 11 is a schematic structural view of an embodiment of the package excitation method in FIG. 9;
  • FIG. 13 is a schematic structural diagram of another embodiment of the package of this application.
  • FIG. 14 is a schematic structural view of an embodiment of the package excitation method in FIG. 13;
  • 15 is a schematic structural diagram of another embodiment of the package of this application.
  • 16 is a schematic structural view of another embodiment of the package of this application.
  • 17 is a schematic structural diagram of another embodiment of the package of this application.
  • FIG. 18 is a schematic diagram of the spectrum of the embodiment 11;
  • Example 19 is a schematic diagram of the spectrum of the implementation mode of Example 21;
  • Example 31 is a schematic diagram of the spectrum of Example 31 implementation mode
  • Example 21 is a schematic diagram of the spectrum of the embodiment of Example 41.
  • Example 22 is a schematic diagram of the spectrum of the implementation of Example 51;
  • Example 61 is a schematic diagram of the spectrum of Example 61 implementation mode
  • FIG. 25 is a schematic diagram of the spectrum of the embodiment of Example 81.
  • 26 is a schematic diagram of the spectrum of Example 91 implementation mode
  • FIG. 28 is a schematic diagram of the spectrum of the implementation manner of Example 11.
  • FIG. 29 is a schematic structural diagram of another embodiment of a package according to this application.
  • FIG. 30 is a schematic structural view of an embodiment of the package excitation method in FIG. 29.
  • FIG. 30 is a schematic structural view of an embodiment of the package excitation method in FIG. 29.
  • FIG. 2 is a schematic structural view of an embodiment of a package according to the present application.
  • the package includes: a support 1, wherein the support 1 may be a substrate with a circuit, a bracket with a circuit, or no Any one of the adhesive films of the circuit; at least one first chip 2 and at least one second chip 3, the first chip 2 and the second chip 3 are located on one side of the support 1, and the surface of the second chip 3 At least the top surface is provided with a long-wavelength phosphor adhesive layer 4 (that is, a red phosphor adhesive layer); the encapsulation layer 5, covering the support 1 is provided with a side of the first chip 2 and the second chip 3, the first chip 2, the first The second chip 3 and the long-wavelength phosphor adhesive layer 4 are located in the encapsulation layer 5; L is less than the peak wavelength. 1 long-wavelength red phosphor having a peak wavelength L.
  • FIG. 2 only one first chip 2 and one second chip 3 are schematically shown on the support 1, and the number of the first chip 2 and the second chip 3 can be increased according to the actual light emission spectrum. Number, as shown in Figure 3.
  • FIG. 5 is a schematic top view of an embodiment of a package according to the present application.
  • the forming process specifically includes: bonding the first chip 2 and the second chip 3 to the tape
  • the support 1 can be a substrate at this time, and the glue is dispensed in the dam to form a circle or a square, and then the phosphor colloid layer is coated as a whole to form an overall COB package structure; practical application
  • SMD packaging, CSP packaging or filament strip packaging can also be adopted according to actual needs.
  • the following further describes the package provided by the present application with several sets of specific embodiments.
  • a long-wavelength phosphor adhesive layer 4 is provided on the top and side surfaces of the second chip 3, and the parameters of the three batches of samples are:
  • the parameters of HDK-S1-1 are: the first chip 2 selects an LED chip with a peak wavelength of 445nm, the second chip 3 selects an LED chip with a peak wavelength of 450nm; the phosphor in the long-wavelength phosphor adhesive layer 4 is a red phosphor; The phosphor in the first wavelength phosphor glue layer without red phosphor in the encapsulation layer 5 is a mixed phosphor of green phosphor and yellow phosphor, and the peak wavelength of the phosphor is 510 nm.
  • the parameters of HDK-S1-1 are: the first chip 2 selects an LED chip with a peak wavelength of 445nm, the second chip 3 selects an LED chip with a peak wavelength of 445nm; the phosphor in the long-wavelength phosphor adhesive layer 4 is a red phosphor; The phosphor in the first wavelength phosphor colloid layer without red phosphor in the encapsulation layer 5 is a mixed phosphor of green phosphor and yellow phosphor, and the peak wavelength of the phosphor is 510 nm.
  • the parameters of HDK-S1-3 are: the first chip 2 selects an LED chip with a peak wavelength of 445nm, the second chip 3 selects an LED chip with a peak wavelength of 420nm; the phosphor in the long-wavelength phosphor adhesive layer 4 is a red phosphor; The phosphor in the first wavelength phosphor glue layer without red phosphor in the encapsulation layer 5 is a mixed phosphor of green phosphor and yellow phosphor, and the peak wavelength of the phosphor is 510 nm.
  • Table 1 Comparison table of parameter test average values of three samples and commercially available samples
  • At least the top surface (not marked) of the surface of the first chip 2a is provided with a second wavelength phosphor adhesive layer 6a without red phosphor, and the encapsulation layer 5a further covers the first Two wavelength phosphor glue layer 6a; and the peak wavelength L 2 of the phosphor of the second wavelength phosphor glue layer 6a is less than the peak wavelength L 1 of the phosphor of the first wavelength phosphor colloid layer in the encapsulation layer 5a, that is, in this embodiment In the example, L 2 ⁇ L 1 ⁇ L red .
  • FIG. 6 only the first chip 2a and the second chip 3a are schematically shown on the support 1a, and the number of the first chip 2a and the second chip 3a can be increased according to the actual light emission spectrum needs. As shown in Figure 7.
  • the package in this embodiment is tested in an SMD package, and the top and side surfaces of the second chip 3a are provided There is a long-wavelength phosphor adhesive layer 4a, and a second-wavelength phosphor adhesive layer 6a without red phosphor is provided on the top and side surfaces of the first chip 2a; the parameters of the three batches of samples are:
  • the parameters of HDK-S2-1 are: the first chip 2a selects an LED chip with a peak wavelength of 445nm, the second chip 3a selects an LED chip with a peak wavelength of 455nm; the phosphor in the long-wavelength phosphor glue layer 4a is a red phosphor; the phosphor in the encapsulation layer 5a is a mixture of yellow phosphor and green phosphor, the peak wavelength of the phosphor is 520nm; the phosphor in the second wavelength phosphor colloid layer 6a without red phosphor is blue The peak wavelength of the phosphor is 475nm.
  • the parameters of HDK-S2-2 are: the first chip 2a selects an LED chip with a peak wavelength of 445nm, the second chip 3a selects an LED chip with a peak wavelength of 450nm; the phosphor in the red phosphor colloid layer 4a is a red phosphor, The phosphor in the encapsulation layer 5a is a mixture of yellow phosphor and green phosphor, the peak wavelength of the phosphor is 520nm; the phosphor in the second wavelength phosphor glue layer 6a without red phosphor is blue fluorescence The peak wavelength of the phosphor is 475nm.
  • the parameters of HDK-S2-3 are: the first chip 2a selects an LED chip with a peak wavelength of 445nm, the second chip 3a selects an LED chip with a peak wavelength of 445nm; the phosphor in the red phosphor colloid layer 4a is a red phosphor, The phosphor in the encapsulation layer 5a is a mixture of yellow phosphor and green phosphor, the peak wavelength of the phosphor is 520nm; the phosphor of the second wavelength phosphor colloid layer 5a without red phosphor is blue fluorescence The peak wavelength of the phosphor is 475nm.
  • Table 2 Comparison table of the average test parameters of the three Heidelke samples and commercially available samples
  • the high-display-efficiency high-efficiency package in this embodiment is an SMD package, and the first chip 2a and the second chip 3a adopt a flip-chip structure; however, in practical applications, Not limited to this packaging form, COB packaging, CSP packaging or filament strip packaging can also be used according to actual needs. However, when a packaging form such as COB or filament strip is used, it is preferable that the first chip 2a has a flip chip or vertical chip structure, and the second chip 3a has a front-mounted chip structure.
  • the first chip 2c, the third chip 7c, and the second chip 3c on the support member 1c are not limited to one in FIG. 9, and the first chip 2c can be increased according to the actual light emission spectrum needs.
  • the first chip 2c can be a violet LED chip with a peak wavelength of 390-430nm
  • first chip 2c the second chip 3c, and the third chip 4c
  • a front-mounted, flip-chip, or vertical chip structure may be used.
  • the first chip 2c uses a flip-chip or vertical chip structure
  • the chip 4c adopts a formal chip structure.
  • the specific excitation method of the package in this embodiment can be seen in FIG. 11, as a preferred solution of this embodiment: taking the package package of the filament strip as an example, the test is performed, and only a long wavelength is provided on the top surface of the second chip 3c
  • the phosphor adhesive layer 4c is provided with a second wavelength phosphor adhesive layer 6c without red phosphor only on the top surface of the first chip 2c.
  • the parameters of the three batches of samples are:
  • the first chip 2c uses LED chips with a peak wavelength of 430nm
  • the third chip 7c uses LED chips with a peak wavelength of 455nm
  • the second chip 3c uses LED chips with a peak wavelength of 465nm
  • long-wavelength phosphor glue The phosphor in the layer 4c is a red phosphor
  • the phosphor in the second wavelength phosphor glue layer 6c is a blue phosphor with a peak wavelength of 475nm.
  • the phosphor in the first wavelength phosphor glue layer in the encapsulation layer 5c is a mixed phosphor in the green phosphor and the yellow phosphor, and its peak emission wavelength is 530 nm.
  • HDK-S4-2 The first chip 2c uses LED chips with a peak wavelength of 430nm, the third chip 7c uses LED chips with a peak wavelength of 445nm, and the second chip 3c uses LED chips with a peak wavelength of 445nm; long-wavelength phosphor glue
  • the phosphor in the layer 4c is a red phosphor, and the phosphor in the second wavelength phosphor glue layer 6c is a blue phosphor with a peak wavelength of 475nm.
  • the phosphor in the first wavelength phosphor glue layer in the encapsulation layer 5c is a mixed phosphor in the green phosphor and the yellow phosphor, and its peak emission wavelength is 530 nm.
  • the first chip 2c uses LED chips with a peak wavelength of 430nm
  • the third chip 7c uses LED chips with a peak wavelength of 430nm
  • the second chip 3c uses LED chips with a peak wavelength of 430nm
  • long-wavelength phosphor glue The phosphor in the layer 4c is a red phosphor
  • the phosphor in the second wavelength phosphor glue layer 6c is a blue phosphor with a peak wavelength of 475nm.
  • the phosphor in the first wavelength phosphor glue layer in the encapsulation layer 5c is a mixed phosphor in the green phosphor and the yellow phosphor, and its peak emission wavelength is 530 nm.
  • the package body adopts a multi-chip filament packaging structure.
  • SMD packaging, COB packaging, or CSP packaging may also be used according to actual needs.
  • the top surface of the third chip 7d is provided with a third wavelength phosphor adhesive layer 8d without red phosphor, and the encapsulation layer 5d further covers the third The chip 7d and the third wavelength phosphor glue layer 8d; and the peak wavelength L 3 of the third wavelength phosphor glue layer 8d is greater than the peak wavelength L 2 of the phosphor powder in the second wavelength phosphor glue layer 6d and smaller than the encapsulation layer 5d
  • the peak wavelength L 1 of the phosphor in the phosphor layer of the first wavelength is L 2 ⁇ L 3 ⁇ L 1 .
  • the first chip 2d may preferably use a violet LED chip with a peak wavelength of 390-430 nm.
  • the colloid in the above-mentioned phosphor powder layers may be one or more of epoxy resin, silica gel or polyimide. The specific excitation method of this embodiment is shown in FIG. 14.
  • first chip 2d, the second chip 3d, and the third chip 7d provided on the support 1d are not limited to one, nor are they limited to the first chip 2d, the second chip 3d, and the The ratio of the third chip 7d can be adjusted according to the actual light emission spectrum needs, and the number of the first chip 2d, the second chip 3d, and the third chip 7d can be adjusted accordingly.
  • a violet LED chip with a wavelength of 390 to 430 nm can be preferably used.
  • a package with the same structure as shown in FIG. 13 is taken as an example, and the test is performed.
  • the test sample uses a two-color COB package structure, and only a long length is provided on the top surface of the second chip 3g Wavelength phosphor glue layer 4g, only the third wavelength phosphor glue layer 8g without red phosphor is provided on the top surface of the third chip 7g; only the top surface of the first chip 2g is provided with the third phosphor powder layer without red phosphor Two-wavelength phosphor adhesive layer 6g; three batches of sample parameters are:
  • the fourth chip 9g selects an LED chip with a peak wavelength of 455nm
  • the first chip 2g selects a purple LED chip with a peak wavelength of 430nm
  • the third chip 7g selects an LED chip with a peak wavelength of 455nm
  • the second The chip 3g selects an LED chip with a peak wavelength of 465nm
  • the phosphor in the long-wavelength phosphor adhesive layer 4g is red phosphor
  • the phosphor in the second-wavelength phosphor adhesive layer 6g without red phosphor is blue phosphor
  • Its luminescence peak wavelength is 475nm
  • the phosphor in the third wavelength phosphor glue layer 8g can be green phosphor, its luminescence peak wavelength is 515nm
  • Medium phosphor, its peak emission wavelength is 530nm.
  • the fourth chip 9g selects an LED chip with a wavelength of 455nm
  • the first chip 2g selects a violet LED chip with a peak wavelength of 430nm
  • the third chip 7g selects an LED chip with a peak wavelength of 445nm
  • the second chip 3g selects an LED chip with a peak wavelength of 445nm
  • the phosphor in the long wavelength phosphor glue layer 4g is red phosphor
  • the phosphor in the second wavelength phosphor glue layer without red phosphor 6g is blue phosphor
  • the luminescence peak wavelength is 475nm
  • the phosphor in the third wavelength phosphor glue layer 8g may be a green phosphor
  • the luminescence peak wavelength is 515nm
  • the phosphor has a peak wavelength of 530nm.
  • the fourth chip 9g selects an LED chip with a wavelength of 455nm
  • the first chip 2g selects a violet LED chip with a peak wavelength of 420nm
  • the third chip 7g selects an LED chip with a peak wavelength of 420nm
  • the second chip 3g selects an LED chip with a peak wavelength of 420nm
  • the phosphor in the long wavelength phosphor glue layer 4g is red phosphor
  • the phosphor in the second wavelength phosphor glue layer 6g without red phosphor is blue phosphor
  • the luminescence peak wavelength is 475nm
  • the phosphor in the third wavelength phosphor glue layer 8g may be a green phosphor
  • the luminescence peak wavelength is 515nm
  • the phosphor has a peak wavelength of 530nm.
  • the first chip 2g selects a violet LED chip with a wavelength of 390-430 nm to excite the blue phosphor in the second wavelength phosphor colloid layer 6g.
  • the blue phosphors in the second wavelength phosphor colloid layer 6g are all covered on the top and surroundings of the first chip 2g, because only the violet light with a higher energy than the blue light can excite the blue phosphor, so this embodiment is used
  • the packaging method can greatly improve the excitation efficiency of the phosphor LED chip excitation phosphor.
  • the wavelength difference between the first chip 2g, the second chip 3g and the third chip 7g in this embodiment can be satisfied, the light efficiency can be further improved.
  • the fourth chip 9g, the first chip 2g, the second chip 3g, and the third chip 7g on the substrate of this embodiment are not limited to one, nor are they limited to the fourth chip 9g, the first chip 2g, the first The ratio of the second chip 3g and the third chip 7g can be adjusted accordingly according to the actual light emission spectrum needs, and the number of the first chip 2g, the second chip 3g, and the third chip 7g.
  • the use of multiple chip excitations with different peak wavelengths can take into account the excitation wavelengths of different phosphors.
  • the relative excitation efficiency can reach more than 80%.
  • the relative excitation efficiency is above 80% when the excitation light is between 420nm-470nm.
  • the relative excitation efficiency is high, the Stokes shift is large, and much energy is absorbed and converted into thermal energy by lattice vibration.
  • the relative excitation efficiency is 60%, the photon energy loss is 0.72eV, and the 440nm blue light with a photon energy of 2.81eV is used for excitation.
  • the relative excitation efficiency is 70%, and the photon energy loss is 0.92eV. That is, the excitation efficiency of short-wavelength excitation is increased by 10%, but the photon energy loss is increased by 28%. Considering that the red light excitation spectrum changes smoothly between 450-500nm, the relative excitation efficiency slowly decreases from 65% to 55%.
  • the unabsorbed excitation light can compensate for the blue-green light missing in the spectrum, and can also be used to excite the external yellow or blue-green phosphor to improve the color rendering index.
  • the package of multiple chips with different peak wavelengths can effectively avoid the secondary absorption of blue-green light by the red phosphor, and only a very small amount of blue-green light will be irradiated onto the red phosphor. This helps to improve the blue-green component of the spectrum, thereby increasing the color rendering index.
  • the long-wavelength chip used in this application can excite the red phosphor to obtain red light with a longer peak wavelength, and the short-wavelength chip to excite the blue-green phosphor can obtain a blue-green light with a shorter peak wavelength, which makes the band spectrum wider and thus The earth improves the color rendering index.
  • short-wavelength excitation when used, its emission spectrum will also shift to shortwaves.
  • the long-wavelength chip used in this application excites the red phosphor, which will cause the emission wavelength to be red-shifted, which is beneficial to obtain a higher color rendering index. It has the same advantages for blue-green light.
  • the color temperature of the target light source is 4000K
  • the number of all red powder CSP chips is 48
  • the number of blue chips is 46
  • the color temperature of the target light source is 3000K
  • the number of all-red powder CSP chips is 61
  • the number of blue chips is 34, that is, it can be achieved by changing the ratio of the red chip to the blue chip in the light source
  • the change of color temperature unlike the conventional packaging form, needs to accurately weigh the phosphor through a high-precision balance, and then change the mixed concentration of the red phosphor in the overall packaging layer to achieve the change of color temperature.
  • the two methods of adjusting the color temperature can also be observed in appearance.
  • the light source with high color rendering index and high light efficiency of the invention patent looks clearer, and the blue chip and red CSP chip are clearly distinguishable.
  • the color temperature can be changed directly by changing the ratio of blue and red chips in the light source.
  • the first chip 2 is a first wavelength blue light chip
  • the second chip 3 is a second wavelength blue light chip.
  • the long-wavelength phosphor adhesive layer 4 is made of a mixture of colloid and long-wavelength phosphor with an emission wavelength of 600-1000 nm; and the weight ratio of the long-wavelength phosphor and colloidal powder in the long-wavelength phosphor adhesive layer 4 is 0.2-5: 1; and/or, the first wavelength phosphor adhesive layer in the encapsulation layer 5 contains either or both of a green phosphor with an emission wavelength of 500-550 nm and a yellow phosphor with an emission wavelength of 550-600 nm, and It does not contain blue phosphor with emission wavelength of 450-500nm and long-wavelength phosphor with emission wavelength of 600-1000nm.
  • the number of second chips 3 accounts for 5-30% of the total number of the first chip 2 and the second chip 3; when the color temperature required by the entire package is lower than or equal to 4500K, The number of the second chip 3 accounts for 30 to 80% of the total number of the first chip 2 and the second chip 3.
  • the long-wavelength phosphor adhesive layer 4 is disposed on the top and side surfaces of the second chip 3 to form a CSP packaging structure, or is disposed on the top surface of the second chip 3 to form a WLP packaging structure, and the long-wavelength phosphor adhesive layer 4 is provided
  • the thickness of the top surface of the second chip 3 is 20 to 400 um
  • the thickness of the side surface of the second chip 3 is 0 to 400 um (for example, 20 to 400 um).
  • the long-wavelength phosphor with an emission wavelength of 600-1000 nm uses any one or a mixture of red phosphor and near-infrared phosphor.
  • beef When applied to the lighting of meat products, beef preferably contains red phosphor with a wavelength of 658-660 nm in the long-wavelength phosphor, and the weight of the red phosphor with a wavelength of 658-660 nm accounts for more than half of the weight of the long-wavelength phosphor.
  • the pork preferably has a long-wavelength phosphor as a red phosphor with a wavelength of 605 to 630 nm, and does not contain phosphors exceeding 630 nm.
  • the package of the above structure uses multiple chips with different wavelengths to excite, which can take into account the excitation wavelengths of different phosphors, that is, short-wavelength chips can be used to excite short-wavelength phosphors, and long-wavelength chips can excite long-wavelength phosphors.
  • the short-wavelength fluorescence generated by the wavelength phosphor again excites the long-wavelength phosphor and is reabsorbed; the optimal excitation wavelength realizes the highest quantum efficiency and at the same time improves the light efficiency of the light source.
  • the packaging structure of a chip with multiple different wavelengths is different from the conventional technology in that the long-wavelength phosphors are packaged in the local range of the top and side of the chip using CSP or WLP technology, and there are few short-wavelength and The medium-wavelength fluorescence will be irradiated on the long-wavelength phosphor, which can effectively avoid the secondary absorption of the blue and green fluorescence by the long-wavelength phosphor, thereby improving the light efficiency and the color rendering index.
  • the long-wavelength chip used in this application excites long-wavelength fluorescence
  • the powder can obtain long-wavelength red fluorescence, and the short-wavelength chip can be used to excite the blue and green phosphors to obtain the short-wavelength blue and green fluorescence, which broadens the fluorescence band spectrum, thereby further improving the color rendering index.
  • the package provided in this application can change the color temperature by changing the ratio of the first chip to the second chip in the light source.
  • the color temperature of the light source needs to be changed by continuously adjusting the ratio and amount of the phosphor powder of the entire phosphor layer, which leads to the problem that the light emitting surface of the COB package is dark and turbid.
  • This application is implemented with a CSP chip that uses all red powder.
  • the color temperature can be changed by changing the ratio of the red chip to the blue chip in the light source.
  • the third chip 9e is provided on the surface on the same side as the first chip 2e,
  • the third chip 9e is a violet or near ultraviolet chip, and at least the top surface of the second chip 2e is provided with a long-wavelength phosphor adhesive layer 4e, and the surface of the third chip 9e is provided with a short-wavelength phosphor adhesive layer 10e.
  • the long-wavelength phosphor adhesive layer 4e is made of a mixture of colloid and long-wavelength phosphor with an emission wavelength of 600-1000nm; and the weight ratio of the long-wavelength phosphor and colloidal powder in the long-wavelength phosphor adhesive layer 4e is 0.2-5: 1;
  • the short-wavelength phosphor adhesive layer 10e is made of a mixture of colloid and short-wavelength phosphor with an emission wavelength of 450-500nm; wherein, the short-wavelength phosphor adhesive layer 10e has a weight ratio of short-wavelength phosphor to colloidal powder of 0.2 ⁇ 5:1, and/or the number ratio of the third chip 9e to the first chip 2e is 1:1 ⁇ 5.
  • the short-wavelength phosphor adhesive layer 10e is provided on the top and side surfaces of the violet or near-ultraviolet chip (ie, the third chip 9e) to form a CSP package structure, or is provided on the violet or near-ultraviolet chip (ie, the third chip 9e).
  • the top surface forms a WLP package structure; usually, the short-wavelength phosphor adhesive layer 10e is provided on the top surface of the violet or near-ultraviolet chip (ie, the third chip 9e) with a thickness of 20 to 400um, and on the violet or near-ultraviolet chip (ie, the third The thickness of the side surface of the chip 9e) is 0-400um.
  • the weight ratio of the short-wavelength phosphor to the colloid in the short-wavelength phosphor adhesive layer 10e is greater than 2 to 5:1; and the number ratio of the third chip 9e to the first chip 2e is 1:1 ⁇ 3.
  • the long-wavelength phosphor adhesive layer 4e is disposed on the top surface and side surface of the second chip 3e to form a CSP packaging structure, or is disposed on the top surface of the second chip 3e to form a WLP packaging structure; generally, the long-wavelength phosphor adhesive layer 4e
  • the thickness of the top surface of the second chip 3e is 20-400um
  • the thickness of the side surface of the second chip 4e is 0-400um.
  • the long-wavelength phosphor with an emission wavelength of 600-1000 nm in the encapsulation layer 5e either one of red phosphor and near-infrared phosphor or a mixture of both are used.
  • the beneficial effects of the package with the above structure are: the above spectral dimming package containing violet or near-ultraviolet chips, using multiple chip excitations of different wavelengths can take into account the excitation wavelengths of different phosphors, that is, short wavelength chip excitation can be achieved Short-wavelength phosphors, long-wavelength chips excite long-wavelength phosphors, and at the same time avoid the short-wavelength fluorescence generated by short-wavelength phosphors to re-absorb long-wavelength phosphors and be reabsorbed; the best excitation wavelength to achieve the highest quantum efficiency , While improving the light efficiency of the light source.
  • the packaging structure of a chip with multiple different wavelengths is different from the conventional technology in that the long-wavelength phosphors are packaged in the local range of the top and side of the chip using CSP or WLP technology, and there are few short-wavelength and The medium-wavelength fluorescence will irradiate the long-wavelength phosphor, which can effectively avoid the secondary absorption of cyan, blue, and green fluorescence by the long-wavelength phosphor. In particular, the excitation efficiency of cyan fluorescence is low, which can effectively reduce the secondary loss of cyan fluorescence, thereby improving the light efficiency and the color rendering index.
  • the long-wavelength chip used in this application excites long-wavelength fluorescence
  • the powder can obtain long-wavelength red fluorescence
  • the short-wavelength chip can be used to excite cyan, blue, and green phosphors to obtain short-wavelength cyan, blue, and green fluorescence, which broadens the fluorescence band spectrum, thereby further improving the color rendering index.
  • this application can directly change the color temperature by changing the ratio of the first chip to the second chip in the light source.
  • the color temperature of the light source needs to be changed by continuously adjusting the ratio and amount of phosphor in the entire phosphor layer, which leads to the problem of dark and cloudy color of the light emitting surface of the COB package.
  • the present invention is realized by using a CSP chip with full red powder, and the color temperature can be changed by changing the ratio of the red light chip to the blue light chip in the light source, unlike the conventional packaging form, which needs to accurately weigh the phosphor by a high-precision balance, and then Change the mixing concentration of long-wavelength phosphors in the overall encapsulation layer to achieve the change of color temperature.
  • the long-wavelength phosphor adhesive layer 4f is made of a mixture of colloid and long-wavelength phosphor with an emission wavelength of 600-980 nm, and the weight of the long-wavelength phosphor and colloidal powder in the long-wavelength phosphor adhesive layer 4f The ratio is 0.2 to 5:1; the short-wavelength phosphor adhesive layer 13f provided on the third chip 11f and the fourth chip 12f is made of a mixture of colloid and blue phosphor with an emission wavelength of 450-500nm; The weight ratio of the blue phosphor to the colloid in the powder layer 13f is 0.2-5:1; and/or, the second chip 3f occupies the first chip 1f, the second chip 3f, the third chip 11f, the fourth chip 50 to 75% of the total number of 12f; and/or the ratio of the number between the third chip 11f and the fourth chip 12f is 1:1 to 3; and/or, the number of the first chip 2f and the third chip 11f, The ratio between the total number
  • the short-wavelength phosphor adhesive layer 13f is simultaneously provided on the corresponding chip top surface and side surface to form a CSP packaging structure or on the corresponding chip top surface to form a WLP packaging structure, and the short-wavelength phosphor adhesive layer 13f is provided on the corresponding
  • the thickness of the top surface of the chip is 20-400um, and the thickness of the corresponding side surface of the chip is 0-400um.
  • the long-wavelength phosphor adhesive layer 4f is provided on the top and side surfaces of the second chip 3f to form a CSP packaging structure, or the third-chip 11f is formed on the top surface to form a WLP packaging structure; the long-wavelength phosphor adhesive layer 4f is provided on the second
  • the thickness of the top surface of the chip 3f is 20-400um, and the thickness of the side surface of the second chip 3f is 0-400um.
  • the long-wavelength phosphor with an emission wavelength of 600-980 nm uses any one or a mixture of red phosphor and near-infrared phosphor.
  • the beneficial effects of this embodiment are: the use of multiple specific wavelength chips to cooperate with the phosphor layer, which has multi-spectrum, not only has a long wavelength band that can help plants accelerate growth, photosynthesis and promote flowering, but also has a short wavelength band, It is used to increase the content of anthocyanin, lutein and other phytochemical components with antioxidant effects. At the same time, it can make the leaves of the plant thicker and more colorful. Can maximize the growth of specific crops, so growers can customize the light according to the specific needs of each crop.
  • the light quantum efficiency of the lamp is 3.75umol/J (micromole/joule).
  • the working life of the lamp is 36000 hours, and the working life of the high-pressure sodium lamp is only 8000 hours. Compared with the high-pressure sodium lamp and other systems, the light output is high, but the heat generated is very little, which can provide an ideal spectrum to promote the best growth of crops. Save cooling costs.
  • the excitation of multiple chips with different wavelengths can take into account the excitation wavelengths of different phosphors, that is, short-wavelength chips can be used to excite short-wavelength phosphors, and long-wavelength chips can excite long-wavelength phosphors, while avoiding the short-wavelength phosphors.
  • the short-wavelength fluorescence excites the long-wavelength phosphor again and is reabsorbed; the optimal excitation wavelength achieves the highest quantum efficiency while improving the light efficiency of the light source.
  • the color temperature can be changed directly by changing the ratio of the first chip to the second chip in the light source.
  • the color temperature of the light source needs to be changed by continuously adjusting the ratio and amount of phosphor in the entire phosphor layer, which leads to the problem of dark and cloudy color of the light emitting surface of the COB package.
  • This application is implemented with a CSP chip that uses all red powder.
  • the color temperature can be changed by changing the ratio of the red chip to the blue chip in the light source.
  • it is necessary to accurately weigh the phosphor with a high-precision balance, and then Change the mixing concentration of long-wavelength phosphors in the overall encapsulation layer to achieve the change of color temperature.
  • the preparation method of the package provided by the present application from the perspective of the preparation method of the package.
  • the preparation methods provided in this application include:
  • Step S1 providing at least one first chip and at least one second chip, and at least the top surface of the surface of the second chip is provided with a long-wavelength phosphor adhesive layer.
  • the first chip is a first-wavelength blue light chip
  • the second chip is a second-wavelength blue light chip
  • at least the top surface of the second chip is provided with a long-wavelength phosphor adhesive layer to obtain a WLP or CSP package
  • the long-wavelength phosphor adhesive layer is made of a mixture of colloid and long-wavelength phosphor with an emission wavelength of 600-1000nm, and the ratio of the colloid to the long-wavelength phosphor in the long-wavelength phosphor adhesive layer is controlled as 0.2 to 5:1; those skilled in the art should understand that the powder-to-rubber ratio refers to the mass ratio of glue to powder, and the wavelength of each color phosphor refers to the wavelength.
  • the first chip is a first wavelength blue light chip and the second chip is a second wavelength blue light chip
  • a third chip may also be provided in the above step S1, and the third chip is a violet or near ultraviolet chip;
  • At least the top surface of the second chip is provided with a long-wavelength phosphor adhesive layer to obtain a long-wavelength package in the form of WLP or CSP packaging.
  • the long-wavelength phosphor adhesive layer is mixed with the long-wavelength phosphor with an emission wavelength of 600-1000 nm
  • a short-wavelength phosphor glue layer is made on the surface of the third chip to obtain the short wavelength of WLP or CSP package Encapsulation body, in which the short-wavelength phosphor adhesive layer is composed of colloid and short-wavelength phosphor with an emission wavelength of 450-500nm; the ratio of the short-wavelength phosphor to the colloid in the short-wavelength phosphor adhesive layer is controlled to 0.2 ⁇ 5:1.
  • the first chip is a first wavelength blue light chip
  • the second chip is a second wavelength blue light chip
  • a third chip and a fourth chip may also be provided in the above step S1
  • the third chip is a violet light chip
  • the surface is provided with a blue phosphor adhesive layer
  • the fourth chip is a near-ultraviolet chip or a near-ultraviolet chip
  • the blue phosphor adhesive layer may be provided or not on the surface
  • the layer is composed of colloid and blue phosphor with an emission wavelength of 450-500nm; and the weight ratio of blue phosphor to colloid in the blue phosphor powder layer is 0.2-5:1.
  • Step S2 Set the ratio of the second chip to the total number of chips according to the color temperature requirements of the final package, and compare the corresponding color point coordinates of the second chip on the CIE chromaticity diagram after selecting the number ratio, and record it as the red point (X1; Y1); the color point coordinates of the second chip on the CIE chromaticity diagram after comparison with the selected number ratio are recorded as blue points (X2; Y2).
  • the above step S2 specifically includes: when the color temperature required by the package as a whole is higher than 4500K, the number of second chips accounts for the total number of chips 5 ⁇ 30% of the total; when the required color temperature of the whole package is lower than or equal to 4500K, the number of the second chip accounts for 30 ⁇ 80% of the total number of chips; after comparing the selected number ratio, the second chip corresponds to the CIE chromaticity diagram
  • the coordinate of the color point is recorded as the red point (X1; Y1); the color point coordinates of the first chip on the CIE chromaticity diagram after comparing the selected number ratio are recorded as the blue point (X2; Y2).
  • the above step S2 specifically includes: adjusting the color temperature requirements of the package according to the spectrum of the final violet or near ultraviolet chip , Select the ratio of the second chip to the total number of chips: when the color temperature required by the whole package is higher than 4500K, the number of second chips accounts for 5-30% of the total number of chips; when the color temperature required by the whole package is lower than or equal to At 4500K, the number of second chips accounts for 30 to 80% of the total number of chips; after comparing the number ratio, the corresponding color point coordinates of the second chip on the CIE chromaticity diagram are recorded as red points (X1; Y1); then according to The relative height of the first chip peak wavelength ⁇ A and 480nm in the spectrum, the number ratio of the third chip to the first chip is selected within 1:1 ⁇ 5; the third chip and the first chip are in the CIE color after comparing the selected number ratio The corresponding color point coordinates on the degree chart are
  • the above step S2 specifically includes: color temperature requirements of the plant lighting package according to the solar spectrum ,Preliminarily choose the ratio of the second chip to the total number of chips: the second chip accounts for 50 to 75% of the total number of the first chip, the second chip, the third chip, and the fourth chip; The corresponding color point coordinates on the chromaticity diagram are recorded as red points (X1; Y1); the ratio between the third chip and the fourth chip is set to 1:1 to 3; the number of the first chip is determined so that the first The ratio between the total number of chips and the third chip and the fourth chip is 2:0.5 ⁇ 2; the color point coordinates of the first chip on the CIE chromaticity diagram after comparing the selected number ratio are recorded as blue points (X2 ; Y2).
  • Step S3 Pre-control of the color temperature: the first chip and the second chip are respectively solid-crystallized to the corresponding positions on the support; and lighted, to obtain the color point position of the package corresponding to the CIE chromaticity diagram after lighting, remember Make a mixing point (X3; Y3), and ensure that 0.08 ⁇ Y3 ⁇ 0.30, 0.22 ⁇ X3 ⁇ 0.43; thus pre-control the color temperature range; if it is not within this range, repeat step S2.
  • the above step S3 specifically includes ensuring 0.08 ⁇ Y3 ⁇ 0.20 and 0.22 ⁇ X3 ⁇ 0.43.
  • the above step S3 specifically includes ensuring 0.09 ⁇ Y3 ⁇ 0.20, 0.22 ⁇ X3 ⁇ 0.37.
  • step S3 when the package includes the first chip, the second chip, the third chip, and the fourth chip in step S1, the above step S3 specifically includes ensuring 0.16 ⁇ Y3 ⁇ 0.30 and 0.28 ⁇ X3 ⁇ 0.42.
  • Step S4 According to the color temperature requirements of the final spectral dimming package, find the corresponding color point coordinates of the final color temperature on the Plane trajectory of the CIE chromaticity diagram and record it as the white point (X4; Y4); pass the known red point (X1; Y1), blue point (X2; Y2), mixed point (X3; Y3), white point (X4; Y4) to get the specific coordinate value or coordinate range of the required green point (X5; Y5); then according to Use the coordinate value or coordinate range to select the first wavelength phosphor powder with appropriate proportion, and then mix it into the colloid to form the first wavelength phosphor powder layer; use the first wavelength phosphor powder layer to encapsulate the first chip and the second chip as a whole
  • the supporting member forms an encapsulation layer; then the temperature is raised to cure, and the finished product is obtained.
  • the selection of the first wavelength phosphor in a suitable ratio in the above step S4 includes: selecting a green phosphor with an emission ratio of 500-550 nm and a yellow phosphor with an emission wavelength of 550-600 nm.
  • Step S5 Detect whether the luminescence spectrum and color temperature of the finished product meet the design requirements. If the corresponding color point on the CIE chromaticity diagram deviates from the Planck trajectory, then adjust the ratio of the first wavelength phosphor in the encapsulation layer; if If the color temperature does not meet the requirements, directly adjust the proportion of the second chip to the total of the chips and then repeat steps S3 to S5.
  • the ratio of the first wavelength phosphor in the encapsulation layer is adjusted accordingly, including: If the corresponding color point on the chromaticity diagram is above or below the Planckian locus, then the amount of green phosphor and yellow phosphor in the external colloid should be reduced or increased respectively.
  • step S5 further includes: if the emission spectrum does not meet the requirements, directly adjust the number of the third chip Then repeat steps S3 ⁇ S5.
  • the above step S5 further includes: if the emission spectrum does not meet the requirements, the corresponding After adjusting the number of the first chip, the third chip, and the fourth chip directly, repeat steps S3 to S5.
  • Example 1 Fabricating a spectral dimming package with a color temperature of 4000K.
  • the first chip is a blue light chip, the specification is 14*30mil, and the peak wavelength ⁇ A is 452nm;
  • the second chip is a blue light chip, the specification is 14*30mil, the peak wavelength ⁇ B is 465nm, the long-wavelength phosphor adhesive layer includes long-wavelength phosphor and colloid, and the long-wavelength phosphor powder in the long-wavelength phosphor adhesive layer has a wavelength of 620nm.
  • the weight ratio is 1.7:1; the thickness of the long-wavelength phosphor adhesive layer on the top surface of the second chip is 200 ⁇ m, and the thickness on the side of the second chip is 120 ⁇ m;
  • the total number of chips in the entire spectrum dimming package is 40-50.
  • the number of second chips is 22 and the number of first chips is 23.
  • the second chip corresponds to the red dot
  • the coordinates are (0.5, 0.28)
  • the blue dot coordinates of the first chip are (0.0149, 0.0317)
  • the mixed point coordinates are (0.2413, 0.0877)
  • the color temperature coordinates are (0.378, 0.377).
  • the weight ratio of each component in the encapsulation layer is 70% colloid, 27% green phosphor, and 3% yellow phosphor powder.
  • Example 2 A spectral dimming package with a color temperature of 3000K can be produced, which can be applied to the lighting of meat such as beef.
  • the first chip is a blue light chip, the specification is 14*30mil, and the peak wavelength ⁇ A is 452nm;
  • the second chip is a blue light chip, the specification is 14*30mil, the peak wavelength ⁇ B is 465nm, and the long-wavelength phosphor in the long-wavelength phosphor adhesive layer uses a mixed phosphor.
  • the red phosphor with a wavelength of 658-660nm weighs more than 70%.
  • the rest are red phosphors with a wavelength of 627nm.
  • the weight ratio of the long-wavelength phosphor to the colloid in the long-wavelength phosphor glue layer is 3:1; the thickness of the long-wavelength phosphor glue layer on the top surface of the second chip is 200 microns.
  • the thickness on the side of the second chip is 120 microns;
  • the total number of chips in the entire spectral dimming package is about 50.
  • the number of second chips is 28 and the number of first chips is 23.
  • the second chip corresponds to the red dot coordinate Is (0.54, 0.28)
  • the first chip corresponds to the blue point coordinates (0.0149, 0.0317)
  • the mixed point coordinates are (0.3224, 0.1433)
  • the color temperature corresponding coordinates are (0.418, 0.4115).
  • the weight ratio of each component in the encapsulation layer is 65% colloid, 24% green phosphor, and 16% yellow phosphor powder.
  • Embodiment 3 A spectral dimming package with a color temperature of 6500K is manufactured, which is applied to seafood lighting.
  • the first chip is a blue light chip, the specification is 14*30mil, and the peak wavelength ⁇ A is 452nm;
  • the second chip is a blue light chip, the specification is 14*30mil, the peak wavelength ⁇ B is 465nm, the long-wavelength phosphors in the long-wavelength phosphor adhesive layer are all red powder with a wavelength of 620nm, and the long-wavelength phosphors in the long-wavelength phosphor adhesive layer are colloidal
  • the weight ratio of powder to glue is 0.2:1; the thickness of the long-wavelength phosphor powder layer on the top surface of the second chip is 200 ⁇ m, and the thickness on the side of the second chip is 120 ⁇ m;
  • the total number of chips in the entire spectral dimming package is about 30.
  • the number of second chips is 8 and the number of first chips is 20.
  • the second chip corresponds to the red dot coordinate Is (0.43, 0.21)
  • the first chip corresponds to the blue point coordinates (0.0149, 0.0317)
  • the mixed point coordinates are (0.2205, 0.08017)
  • the color temperature corresponding coordinates are (0.3187, 0.3255).
  • the weight ratio of each component in the encapsulation layer is 69% colloid, 25% green phosphor, and 6% yellow phosphor.
  • Embodiment 4 Fabricating a spectral dimming package structure with a color temperature of 2500K.
  • the first chip is a blue light chip, the specification is 14*30mil, and the peak wavelength ⁇ A is 452nm;
  • the second chip is a blue light chip, the specification is 14*30mil, the peak wavelength ⁇ B is 465nm, the long-wavelength phosphors in the long-wavelength phosphor glue layer are all red powder with a wavelength of 650nm, and the long-wavelength phosphors in the long-wavelength phosphor glue layer are colloidal
  • the weight ratio of powder to glue is 5:1; the thickness of the long-wavelength phosphor powder layer on the top surface of the second chip is 200 microns, and the thickness on the side of the second chip is 120 microns;
  • the total number of chips in the entire spectral dimming package is about 40.
  • the number of second chips is 8 and the number of first chips is 20.
  • the second chip corresponds to the red dot coordinate Is (0.58, 0.305), the blue dot coordinates of the first chip are (0.0149, 0.0317), the mixed point coordinates are (0.4101, 0.2073), and the color temperature coordinates are (0.483, 0.428).
  • the weight ratio of each component in the encapsulation layer is 60% colloid, 20% green phosphor, and 20% yellow phosphor powder.
  • the spectral dimming package structure of the four embodiments using the above-mentioned COB packaging form is compared with the traditional 1919COB packaging structure of 4000K.
  • the test data are shown in Table 5 below (the number of samples is 10 per unit).
  • the spectrum of the above four embodiments The dimming package structure adopts the COB package to form the spectrogram, see Figure 18-21 respectively.
  • Table 5 Comparison table of test data between Example 1 to Example 4 and traditional package
  • the chip in the encapsulation layer of the spectral dimming package provided by this application is clearly discernible, to avoid short-wavelength fluorescence generated by short-wavelength phosphors from exciting long wavelengths again
  • the phosphor is re-absorbed, so that the light efficiency of the light source of most embodiments can be increased by more than 11%, and the heat dissipation effect is good; while the fluorescent band spectrum is broadened, the color rendering index is slightly improved; and by changing the red chip and blue light in the light source
  • the ratio of chips to achieve the change of color temperature not only avoids the precise weighing of phosphors with high-precision balances under the conventional structure, but more importantly, the amount of powder used is greatly reduced.
  • Embodiment 5 making a 4000K color temperature spectral dimming package
  • the first chip is a blue light chip, the specification is 14*30mil, and the peak wavelength ⁇ A is 452nm;
  • the second chip is a blue light chip, its specification is 14*30mil, and its peak wavelength ⁇ B is 465nm;
  • the wavelength of the long-wavelength phosphor adhesive layer is 650 nm, and the powder-to-glue ratio of the long-wavelength phosphor adhesive layer is 1.7:1.
  • the thickness of the long-wavelength phosphor adhesive layer on the top surface of the second chip is 200 ⁇ m, and the thickness of the side surface is 0 ⁇ m.
  • the third chip is a violet or near-ultraviolet chip, the specification is 14*30mil, the wavelength ⁇ C is 410nm, the wavelength of the short-wavelength phosphor glue layer is 480nm, the ratio of the powder of the short-wavelength phosphor glue layer is 2:1, the short-wavelength phosphor
  • the thickness of the glue layer is 300 microns on the top of the violet or near ultraviolet chip, and 120 microns on the side.
  • the total number of chips in the entire spectrum dimming package is 40-50, and the number of second chips is initially selected according to the ratio of 18.
  • the corresponding red dot coordinates of the second chip on the CIE chromaticity diagram are (0.32, 0.14); third The number of chips and the first chip are 7 and 20 respectively.
  • the first chip and the third chip are combined with corresponding coordinates (0.162, 0.22); the mixed point coordinates are (0.28, 0.124), and the color temperature corresponds
  • the coordinates of the CIE chromaticity diagram are (0.384, 0.379); the weight ratio of each component in the encapsulation layer of this embodiment is 70% colloid, 28% green phosphor, and 2% yellow phosphor powder.
  • Embodiment 6 3000K color temperature spectral dimming package.
  • the first chip is a blue light chip, the specification is 14*30mil, and the peak wavelength ⁇ A is 452nm;
  • the second chip is a blue light chip, the specification is 14*30mil, the peak wavelength ⁇ B is 465nm, the wavelength of the long-wavelength phosphor glue layer is 650nm, the ratio of the powder to glue of the long-wavelength phosphor glue layer is 4:1, the long-wavelength phosphor glue
  • the thickness of the layer on the top surface of the second chip is 200 ⁇ m, and the thickness of the side is 120 ⁇ m;
  • the third chip is a violet or near-ultraviolet chip with a specification of 14*30mil, a peak wavelength ⁇ C of 410nm, a short-wavelength phosphor adhesive layer with a wavelength of 480nm, a short-wavelength phosphor adhesive layer with a ratio of 2:1, and a short-wavelength phosphor adhesive
  • the layer thickness is 300 microns on the top of the violet or near-ultraviolet chip and 120 microns on the side;
  • the total number of chips in the entire spectrum dimming package structure is 40-50. According to the ratio, the number of second chips is initially selected to be 22.
  • the corresponding red dot coordinates of the second chip on the CIE chromaticity diagram are (0.384, 0.131); third The number of chips and the first chip are 5 and 18 respectively.
  • the third chip and the first chip are combined with corresponding coordinates (0.162, 0.21); the mixed point coordinates are (0.3121, 0.1453), and the color temperature corresponds
  • the coordinates of the CIE chromaticity diagram are (0.442, 0.402); the weight ratio of each component in the encapsulation layer of this embodiment is 70% colloid, 20% green phosphor, and 10% yellow phosphor powder.
  • Embodiment 7 5000K color temperature spectral dimming package, which is applied to a chilled lamp.
  • the first chip is a blue light chip, the specification is 14*30mil, and the peak wavelength ⁇ A is 452nm;
  • the second chip is a blue light chip, the specification is 14*30mil, the peak wavelength ⁇ B is 465nm, the wavelength of the long-wavelength phosphor glue layer is 650nm, the powder-to-glue ratio of the long-wavelength phosphor glue layer is 0.2:1, and the long-wavelength phosphor glue
  • the thickness of the layer on the top surface of the second chip is 200 microns, and the thickness of the side surface is 0 microns;
  • the third chip is a violet or near-ultraviolet chip, the specification is 14*30mil, the wavelength ⁇ C is 410nm, the short-wavelength phosphor adhesive layer wavelength is 480nm, the short-wavelength phosphor adhesive layer powder-to-rubber ratio is 5:1, and the short-wavelength phosphor adhesive layer is The thickness is 400 microns at the top of the violet or near ultraviolet chip, and 120 microns at the side;
  • the total chip design of the entire spectrum dimming package is 30-40, and the number of second chips is initially selected according to the ratio is 10.
  • the second chip corresponds to the red dot coordinate of (0.26, 0.1) on the CIE chromaticity diagram;
  • the number of the three chips and the first chip is 9 and 18 respectively.
  • the third chip and the first chip are combined with corresponding coordinates (0.163, 0.246); the mixed point coordinates (0.24, 0.0965), the color temperature corresponds
  • the coordinates of the CIE chromaticity diagram are (0.345, 0.359); the weight ratio of the components in the encapsulation layer of this embodiment is 73% colloid, 22% green phosphor, and 5% yellow phosphor powder.
  • Embodiment 8 making a 2800K color temperature spectral dimming package, which is applied to a chilled lamp:
  • the first chip is a blue light chip, the specification is 14*30mil, and the peak wavelength ⁇ A is 452nm;
  • the second chip is a blue light chip, the specification is 14*30mil, the peak wavelength ⁇ A is 465nm, the wavelength of the long-wavelength phosphor adhesive layer is 650nm, the ratio of the long-wavelength phosphor adhesive layer is 5:1, and the long-wavelength phosphor adhesive layer
  • the thickness on the top surface of the second chip is 400 microns, and the thickness on the side is 120 microns;
  • the third chip is a violet or near-ultraviolet chip, the specification is 14*30mil, the peak wavelength ⁇ C is 410nm, the wavelength of the short-wavelength phosphor glue layer is 480nm, the ratio of the powder to glue of the short-wavelength phosphor glue layer is 0.5:1, and the short-wavelength phosphor glue
  • the layer thickness is 100 microns on the top of the violet or near-ultraviolet chip, and 0 microns on the side;
  • the total chip design of the entire spectrum dimming package is 40-50, and the number of second chips is initially selected according to the ratio is 20.
  • the corresponding red dot coordinates of the second chip on the CIE chromaticity diagram are (0.483, 0.24);
  • the number of the three chips and the first chip are 7 and 18, respectively.
  • the first chip and the third chip are combined with corresponding coordinates (0.161, 0.18); the mixed point coordinates are (0.3598, 0.1896), and the color temperature
  • the corresponding CIE chromaticity diagram coordinates are (0.483, 0.428);
  • the weight ratio of each component in the encapsulation layer is 70% colloid, 18% green phosphor, and 12% yellow phosphor powder.
  • Example 5 to Example 8 The above-mentioned Example 5 to Example 8 The spectral dimming packages of the four examples are compared with the conventional 1919COB package structure of 4000K using the COB package form, and the test data are shown in Table 6 below (number of samples 10/piece): Embodiment 5-Embodiment 8 The spectral dimming packages of the four embodiments adopt the COB packaging form of the spectrum diagrams, respectively refer to FIGS. 22-25.
  • Table 6 Comparison table of test data between Example 5 to Example 8 and traditional package
  • the chip in the package layer in the package provided in the above embodiment is clearly discernible to avoid that the short-wavelength fluorescence generated by the short-wavelength phosphor is excited again by the long-wavelength phosphor Re-absorption, so that the light efficiency of the light source can be increased by more than 7%, and the heat dissipation effect is good; while the fluorescent band spectrum is broadened, the color rendering index is slightly improved; and the color temperature is changed by changing the ratio of the red chip to the blue chip in the light source , Not only to avoid the precise weighing of phosphors with high-precision balances under the conventional structure, but more importantly, the amount of powder used is greatly reduced.
  • Embodiment 9 5000K solar spectrum plant lighting package
  • the first chip is a blue light chip, its specification is 14*30mil, and its peak wavelength ⁇ A is 445nm;
  • the second chip is a blue light chip, its specification is 14*30mil, its peak wavelength ⁇ B is 465nm, the wavelength of the long-wavelength phosphor adhesive layer is 600nm, the long-wavelength phosphor adhesive layer powder-to-glue ratio is 0.2:1, and the long-wavelength phosphor
  • the thickness of the adhesive layer on the top of the second chip is 200 ⁇ m, and the thickness on the side of the second chip is 120 ⁇ m;
  • the third chip is a purple light chip, its specification is 14*30mil, and its peak wavelength ⁇ C is 410nm;
  • the fourth chip is a near-violet light chip, its specification is 14*30mil, its peak wavelength ⁇ D is 380nm, and the short-wavelength phosphor layer wavelength It is 480nm, and the short-wavelength phosphor glue layer has a powder-to-glue ratio of 5:1.
  • the short-wavelength phosphor glue layer covers the outer surface of the purple chip and the near-violet chip to form a CSP package, with a top thickness of 400 microns and a side surface of 120 microns.
  • the total chip design of the whole plant lighting package is about 140, of which the number of the first chip, the second chip, the third chip and the fourth chip are 43, 70, 9 and 18 respectively; the second The red dot coordinate of the chip on the CIE chromaticity diagram is (0.4239, 0.2196), the blue dot coordinate of the first chip on the CIE chromaticity diagram is (0.1631, 0.2457), the coordinate of the mixed point is (0.3103, 0.1819), and the color temperature corresponds
  • the CIE chromaticity diagram coordinates are (0.3453, 0.3542).
  • the weight ratio of each component in the encapsulation layer of this embodiment is: colloid 70%, green phosphor powder 25%, and yellow phosphor powder 5%.
  • Embodiment 10 4000K solar spectrum plant lighting package
  • the first chip is a blue light chip, its specification is 14*30mil, and its peak wavelength ⁇ A is 452nm;
  • the second chip is a blue light chip, its specification is 14*30mil, its peak wavelength ⁇ B is 465nm, the wavelength of the long-wavelength phosphor adhesive layer is 650nm, the long-wavelength phosphor adhesive layer powder-to-glue ratio is 2:1, and the long-wavelength phosphor
  • the thickness of the adhesive layer on the top of the second chip is 200 ⁇ m, and the thickness on the side of the second chip is 120 ⁇ m;
  • the third chip is a violet chip, its specification is 14*30mil, its peak wavelength ⁇ C is 410nm, the wavelength of the short-wavelength phosphor adhesive layer is 480nm, the short-wavelength phosphor adhesive layer powder-to-glue ratio is 1.7:1, and the short-wavelength phosphor adhesive
  • the layer covers the surface of the purple chip to form a WLP package, with a top thickness of 400 microns and a side surface of 0 microns.
  • the fourth chip is a near-violet chip with a specification of 14*30 mils and a peak wavelength ⁇ D of 380 nm.
  • a blue phosphor powder layer is not provided on the surface of the near-ultraviolet chip.
  • the total chip design of the whole plant lighting package is about 140, of which the number of the first chip, the second chip, the third chip and the fourth chip are 34, 80, 8 and 18 respectively; the second The red dot coordinate of the chip on the CIE chromaticity diagram is (0.4509, 0.2447), the blue dot coordinate of the first chip on the CIE chromaticity diagram is (0.163, 0.2441), the coordinate of the mixed point is (0.3557, 0.1774), and the color temperature corresponds The coordinates of the CIE chromaticity diagram are (0.378, 0.364).
  • the weight ratio of each component in the encapsulation layer is: colloid 65%, green phosphor powder 26%, and yellow phosphor powder 14%.
  • Embodiment 11 3000K solar-like plant lighting package
  • the first chip is a blue light chip, its specification is 14*30mil, and its peak wavelength ⁇ A is 452nm;
  • the second chip is a blue light chip, its specification is 14*30mil, its peak wavelength ⁇ B is 465nm, the phosphor in the long-wavelength phosphor adhesive layer is selected to be half of each wavelength of 677nm and 850nm, and the long-wavelength phosphor adhesive layer powder-to-glue ratio is 5 : 1, the thickness of the long-wavelength phosphor adhesive layer on the top of the second chip is 200 microns, and the thickness on the side of the second chip is 120 microns;
  • the third chip is a violet chip, its specification is 14*30mil, its peak wavelength ⁇ C is 410nm, the wavelength of the short-wavelength phosphor glue layer is 480nm, the short-wavelength phosphor glue layer powder-glue ratio is 0.2:1, the short-wavelength phosphor glue
  • the layer covers the surface of the purple chip to form a WLP package with a thickness of 200 microns on the top and 0 microns on the side.
  • the fourth chip is a near-violet chip with a specification of 14*30 mil and a peak wavelength ⁇ D of 385 nm.
  • a blue phosphor powder layer is not provided on the surface of the near-ultraviolet chip.
  • the total chip design of the whole plant lighting package is about 200, of which the number of the first chip, the second chip, the third chip and the fourth chip are 25, 150, 7, 18 respectively; the second The red point coordinate of the chip on the CIE chromaticity diagram is (0.4852, 0.2883), the blue point coordinate of the first chip on the CIE chromaticity diagram is (0.1621, 0.2432), the mixing point (0.4001, 0.2103), and the CIE corresponding to the color temperature
  • the chromaticity diagram coordinates are (0.4367, 0.4043).
  • the weight ratio of each component in the encapsulation layer is: colloid 60%, green phosphor powder 28%, and yellow phosphor powder 12%.
  • Table 7 Comparison table of test data between Example 9 to Example 11 and traditional package
  • the spectral dimming packages of the above-mentioned Embodiment 9 to Embodiment 11 in the three embodiments adopt the COB packaging form, and the spectrum diagrams are respectively shown in FIGS. 26-28, and their band distributions are shown in Table 8 below.
  • Table 8 Example 9-Example 11 corresponding spectral band distribution data table
  • Example 9 (5000K)
  • Example 10 (4000K)
  • Example 11 (3000K) 380-430 Yes/peak 412nm A A 430-470 A Yes/Peak 450nm Have 470-520 Yes/peak 485nm Yes/Peak 492nm Yes/peak 485nm 520-550 A A Have 600-1000 Yes/peak 670nm Yes/Peak 668nm Yes/peak 670nm
  • the chip in the packaging layer of the spectral dimming package provided by this application is clearly discernible, and the color rendering index is greatly improved, which not only meets the needs of plant lighting, but also It has a high display index and can be used as indoor and outdoor lighting in plant factories; however, the luminous flux is slightly reduced.
  • the color temperature can be changed by changing the ratio of red chip to blue chip in the light source, not only to avoid the conventional structure
  • the phosphor is accurately weighed by a high-precision balance, and more importantly, the amount of powder used is greatly reduced.
  • FIG. 29 is a schematic structural diagram of another embodiment of a package according to this application.
  • the package includes: a support 1h, at least one first chip 2h, at least one second chip 3h, and a packaging layer 5h.
  • the supporting member 1h may be one of a substrate with a circuit, a bracket with a circuit, or an adhesive film without a circuit.
  • the first chip 2h and the second chip 3h are located on one side surface of the support 1h.
  • the difference from the foregoing embodiments is that at least the top surface of the second chip 3h is provided with a blue phosphor glue layer 4h
  • the encapsulation layer 5h covers the side of the support 1h with the first chip 2h and the second chip 3h, the first chip 2h, the second chip 3h and the blue phosphor adhesive layer 4h are located in the encapsulation layer 5h; and the encapsulation layer 5h consists of blue phosphor containing no adhesive layer is formed of a first wavelength phosphor, the peak wavelength of the phosphor in the phosphor of the first wavelength is greater than the adhesive layer.
  • 1 L 4h subbing layer in a blue phosphor having a peak wavelength L blue phosphor.
  • first chip 2h and the second chip 3h on the support member 1h are not limited to one, and the number of the first chip 2h and the second chip 3h may be correspondingly increased according to actual light emission spectrum requirements.
  • the specific excitation mode of the light source formed by the package is shown in FIG. 30.
  • the package provided above will be further described below with several specific embodiments.
  • the test is carried out, and the blue phosphor powder layer 4h is provided on the top and side surfaces of the second chip 3h, the first chip 2h selects an LED chip with a wavelength of 445nm, the first The second chip 3h selects an LED chip with a wavelength of 430nm;
  • the phosphor in the blue phosphor powder layer 4h is a blue phosphor, the phosphor wavelength is 450nm, and the phosphor in the encapsulation layer without blue phosphor 5h is
  • the mixed phosphor of yellow phosphor and red phosphor has a phosphor wavelength of 710nm.
  • the excitation wavelengths of different phosphors can be taken into account by using a plurality of chips with different wavelengths, that is, short-wavelength chips can excite short-wavelength phosphors, and long-wavelength chips can excite long-wavelength phosphors. It can avoid the short-wavelength fluorescence produced by the short-wavelength phosphors from re-absorbing the long-wavelength phosphors again; the optimal excitation wavelength realizes the highest quantum efficiency, and at the same time improves the light efficiency of the light source.
  • the packaging structure of a chip using multiple different wavelengths is different from the conventional technology in that the blue phosphor is packaged in the local range of the top and side of the chip using CSP or WLP technology, and there are only a few short Wavelength and mid-wavelength fluorescence will illuminate the blue phosphor, which can effectively avoid the secondary absorption of red and green fluorescence by the blue phosphor.
  • the present invention uses short-wavelength chips to excite cyan, blue,
  • the green phosphor can obtain cyan, blue, and green fluorescence with shorter wavelengths, which broadens the fluorescence band spectrum, thereby further improving the color rendering index.
  • the color temperature can be changed by changing the ratio of the blue-red chip in the light source.
  • Conventional technology changes the color temperature of the light source by increasing the amount of various phosphors in the overall phosphor layer, which will cause the color of the light-emitting surface of the COB package to be dark and turbid.
  • the present invention is implemented with a full blue powder CSP chip. Change the ratio of the red chip to the blue chip in the light source to achieve the change of color temperature, unlike conventional packaging forms that require precise weighing of the phosphor through a high-precision balance, and then change the mixing concentration of the blue phosphor in the overall packaging layer To achieve a change in color temperature.

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Abstract

一种封装体和封装体的制备方法，所述封装体包括：支撑件（1）；至少一颗第一芯片（2）和至少一颗第二芯片（3），所述第一芯片（2）和所述第二芯片（3）位于所述支撑件（1）的一侧表面上，且所述第二芯片（3）的表面中至少顶面设置有长波长荧光粉胶层（4）；封装层（5），覆盖所述支撑件（1）设置有所述第一芯片（2）和所述第二芯片（3）一侧，所述第一芯片（1）、所述第二芯片（3）和所述长波长荧光粉胶层（4）位于所述封装层（5）内；且所述封装层（5）由不含长波长荧光粉的第一波长荧光粉胶层形成，所述第一波长荧光粉胶层内的荧光粉的峰值波长L1小于长波长荧光粉的峰值波长L红。通过上述方式，能够使得封装体具有更高的显示指数且保证发光效率。

Description

一种封装体及其制备方法 技术领域
本申请涉及半导体光电子及光学领域，特别涉及一种封装体及其制备方法。
背景技术
当前的白光LED一般有如下几种形式，如图1曲线(1)所示，采用蓝光激发单一黄色荧光粉。这种情况下一般光效较高，但是显示指数只有70左右，而且不适于做低色温的应用。在需要做中低色温应用时，一般要加入红色荧光粉。如果需要将显色指数进一步提高到80以上时，则需要同时加入红色和绿色荧光粉。如图1曲线(2)所示，同时采用红色和绿色荧光粉其显色指数可以达到80。但从图1曲线(2)中可以看出，在全光谱应用时，光谱在460-510nm间的蓝色和青色部分仍然有缺失，因此在全光谱应用中常常需要加入峰值波长在470-505nm间的青色荧光粉。
对于常规实现全光谱的技术方案而言，基本都是采用蓝光芯片激发混合荧光粉来实现，但是这样带来的显色指数和光效还远不能满足高光效、高显色指数的需求。因此，有必要提供一种新的封装体以提升光源的显色指数和光效。
发明内容
本申请主要解决的技术问题是提供一种封装体及其制备方法，能够使得封装体具有更高的显色指数且保证发光效率。
为解决上述技术问题，本申请采用的一个技术方案是：提供一种封装体，包括：支撑件；至少一颗第一芯片和至少一颗第二芯片，所述第一芯片和所述第二芯片位于所述支撑件的一侧表面上，且所述第二芯片的表面中至少顶面设置有长波长荧光粉胶层；封装层，覆盖所述支撑件设置有所述第一芯片和所述第二芯片一侧，所述第一芯片、所述第二芯片和所述长波长荧光粉胶层位于所述封装层内；且所述封装层由不含长波长荧光粉的第一波长荧光粉胶层形成，所述第一波长荧光粉胶层内的荧光粉的峰值波长L 1小于长波长荧光粉的峰值波长L 红。
为解决上述技术问题，本申请采用的另一个技术方案是：提供一种封装体的制备方法，所述制备方法包括：步骤S1：提供至少一颗第一芯片和至少一颗第二芯片，且所述第二芯片的表面中的至少顶面设置有长波长荧光粉胶层；步 骤S2：根据最终封装体的色温要求，设定所述第二芯片占总芯片数量的比例，对照选择数量比例后第二芯片在CIE色度图上对应的色点坐标，记作红点(X1；Y1)；对照选择数量比例后第二芯片在CIE色度图上对应的色点坐标，记作蓝点(X2；Y2)；步骤S3：色温的预控制：将所述第一芯片、所述第二芯片分别固晶到支撑件上对应的位置；并点亮，得到点亮后封装体对应在CIE色度图上的色点位置，记作混合点(X3；Y3)，且确保0.08≤Y3≤0.30，0.22≤X3≤0.43；从而对色温范围进行预控制；若不在该范围内则重新进行步骤S2；步骤S4：再根据最终封装体色温要求，查找该最终色温在CIE色度图普朗克轨迹上对应的色点坐标，记作白点(X4；Y4)；通过已知的红点(X1；Y1)、蓝点(X2；Y2)、混合点(X3；Y3)、白点(X4；Y4)来得到所需绿点(X5；Y5)具体的坐标值或坐标范围；再根据该坐标值或坐标范围选择合适配比的第一波长荧光粉，再混合到胶体内形成第一波长荧光粉胶层；利用所述第一波长荧光粉胶层将所述第一芯片、所述第二芯片整体封装在所述支撑件形成封装层；再升高温度进行固化，得到成品；步骤S5：检测成品的发光光谱和色温是否符合设计要求，若最终在CIE色度图上对应的色点相对普朗克轨迹偏差，则对应调整封装层中第一波长荧光粉的配比；若色温不符合要求，则直接调整所述第二芯片占芯片总和的占比再重复步骤S3～S5。
为解决上述技术问题，本申请采用的另一个技术方案是：提供一种封装体，包括：支撑件；至少一颗第一芯片和至少一颗第二芯片，所述第一芯片和所述第二芯片位于所述支撑件的一侧表面上，且所述第二芯片的表面中至少顶面设置有蓝色荧光粉胶层；封装层，覆盖所述支撑件设置有所述第一芯片和所述第二芯片一侧，所述第一芯片、所述第二芯片和所述蓝色荧光粉胶层位于所述封装层内；且所述封装层由不含蓝色荧光粉的第一波长荧光粉胶层形成，所述第一波长荧光粉胶层内的荧光粉的峰值波长L 1大于所述蓝色荧光粉胶层中荧光粉的峰值波长L 蓝。
本申请的有益效果是：区别于现有技术的情况，(1)本申请采用多个不同峰值波长的芯片激发可以兼顾到不同峰值波长荧光粉的激发波长，即可以实现短波长芯片激发短波长荧光粉，长波长芯片激发长波长荧光粉，同时可以避免由于短波长荧光粉产生的短波长荧光再一次激发长波长荧光粉而被再吸收；最佳的激发波长，实现最高的量子效率，同时提高光源的光效。(2)本申请采用多个不同峰值波长的芯片的封装结构，与常规技术的区别在于，其中的长波长 荧光粉采用CSP或WLP技术封装在芯片的顶面及侧面的局域范围内，只有极少的短波长和中波长荧光会照射到长波长荧光粉上，可以有效避免长波长荧光粉对青、蓝、绿荧光的二次吸收问题。特别是青色荧光激发效率低，可以有效减少青色荧光的二次损耗，从而提高光效的同时并提升显色指数。(3)根据斯托克斯位移现象，对于同一种荧光粉，当激发光的波长移动时，其发光波长也会向对应的波长方向进行相对移动；因此本申请采用的长波长芯片激发长波长荧光粉可以得到波长较长的红色荧光，采用短波长芯片激发青、蓝、绿色荧光粉可以得到波长较短的青、蓝、绿荧光，使得荧光带谱变宽，从而进一步提高显色指数。(4)本申请可通过改变光源中蓝红芯片的比例来改变色温。常规技术通过在整体荧光粉层内增加红色及其他荧光粉的量来改变光源的色温，这样会导致COB封装的发光面颜色深且浑浊，而本申请是采用全红粉的CSP芯片实现，可通过改变光源中红光芯片与蓝光芯片的比例来实现色温的改变,而不像常规封装形式需要通过高精度天平精确地称量荧光粉，然后在整体封装层中改变红色荧光粉的混合浓度来实现色温的改变。
【附图说明】
图1为传统的白光LED一实施方式的发光光谱示意图；
图2为本申请封装体一实施方式的结构示意图；
图3为本申请封装体另一实施方式的结构示意图；
图4为图2中封装体激发方式一实施方式的结构示意图；
图5为本申请封装体一实施方式的俯视示意图；
图6为本申请封装体另一实施方式的结构示意图；
图7为本申请封装体另一实施方式的结构示意图；
图8为图6中封装体激发方式一实施方式的结构示意图；
图9为本申请封装体另一实施方式的结构示意图；
图10为本申请封装体另一实施方式的结构示意图；
图11为图9中封装体激发方式一实施方式的结构示意图；
图12为本申请封装体另一实施方式的结构示意图；
图13为本申请封装体另一实施方式的结构示意图；
图14为图13中封装体激发方式一实施方式的结构示意图；
图15为本申请封装体另一实施方式的结构示意图；
图16为本申请封装体另一实施方式的结构示意图；
图17为本申请封装体另一实施方式的结构示意图；
图18为实施例一一实施方式的光谱示意图；
图19为实施例二一实施方式的光谱示意图；
图20为实施例三一实施方式的光谱示意图；
图21为实施例四一实施方式的光谱示意图；
图22为实施例五一实施方式的光谱示意图；
图23为实施例六一实施方式的光谱示意图；
图24为实施例七一实施方式的光谱示意图；
图25为实施例八一实施方式的光谱示意图；
图26为实施例九一实施方式的光谱示意图；
图27为实施例十一实施方式的光谱示意图；
图28为实施例十一一实施方式的光谱示意图；
图29为本申请封装体另一实施方式的结构示意图；
图30为图29中封装体激发方式一实施方式的结构示意图。
【具体实施方式】
如图2所示，图2为本申请封装体一实施方式的结构示意图，该封装体包括：支撑件1，其中，支撑件1可以为带有电路的基板、带有电路的支架或不带电路的粘性薄膜中的任意一种；至少一颗第一芯片2和至少一颗第二芯片3，第一芯片2和第二芯片3位于支撑件1的一侧，且第二芯片3的表面中至少顶面设置有长波长荧光粉胶层4(即红色荧光粉胶层)；封装层5，覆盖支撑件1设置有第一芯片2和第二芯片3一侧，第一芯片2、第二芯片3和长波长荧光粉胶层4位于封装层5内；且封装层5由不含长波长荧光粉的第一波长荧光粉胶层形成，第一波长荧光粉胶层内的荧光粉的峰值波长L 1小于长波长荧光粉的峰值波长L 红。
需要说明的是，图2中仅在支撑件1示意画出一颗第一芯片2和一颗第二芯片3，可以根据实际发光光谱需要，相应增加第一芯片2和第二芯片3的颗数，如图3所示。
在一个实施方式中，第一芯片2的峰值波长记作λA，λA＝390～460nm，第二芯片3的峰值波长记作λB，λB＝445～550nm；且0≤λB－λA≤160nm； 和/或，封装层5内的第一波长荧光粉胶层中荧光粉为绿色荧光粉、靛色荧光粉、青色荧光粉、黄色荧光粉和蓝色荧光粉的一种或者多种，且L 1＝470～590nm。
本实施例中封装体的具体激发方式可参见图4，作为本实施例优选的方案：
请参阅图5，图5为本申请封装体一实施方式的俯视示意图，以COB封装形式的封装体为例，其形成过程具体包括：在把第一芯片2和第二芯片3固晶到带电路的支撑件1上后，此时支撑件1可以为基板，在围坝内点胶，形成圆形或者方形，然后再整体涂覆荧光粉胶体层，最终形成整体的COB封装结构；实际应用中，还可以根据实际需要，采用SMD封装、CSP封装或者灯丝条封装。下面以几组具体实施例对本申请所提供的封装体作进一步说明。在本实施例中，第二芯片3的顶面和侧面均设置有长波长荧光粉胶层4，三批次样品参数分别为：
HDK-S1-1的参数为：第一芯片2选用峰值波长在445nm的LED芯片，第二芯片3选用峰值波长在450nm的LED芯片；长波长荧光粉胶层4中的荧光粉为红色荧光粉，封装层5中不含红色荧光粉的第一波长荧光粉胶层中的荧光粉为绿色荧光粉和黄色荧光粉混合荧光粉，其荧光粉的峰值波长为510nm。
HDK-S1-1的参数为：第一芯片2选用峰值波长在445nm的LED芯片，第二芯片3选用峰值波长在445nm的LED芯片；长波长荧光粉胶层4中的荧光粉为红色荧光粉，封装层5内不含红色荧光粉的第一波长荧光粉胶体层中的荧光粉为绿色荧光粉和黄色荧光粉混合荧光粉，其荧光粉的峰值波长为510nm。
HDK-S1-3的参数为：第一芯片2选用峰值波长在445nm的LED芯片，第二芯片3选用峰值波长在420nm的LED芯片；长波长荧光粉胶层4中的荧光粉为红色荧光粉，封装层5内不含红色荧光粉的第一波长荧光粉胶层中的荧光粉为绿色荧光粉和黄色荧光粉混合荧光粉，其荧光粉的峰值波长为510nm。
将上述三种样品与市售的某型号样品参数测试平均值进行对比，其数据如下表1所示。
表1：三种样品与市售样品参数测试平均值对照表
Figure PCTCN2019123375-appb-000001
Figure PCTCN2019123375-appb-000002
从上述表1可以看出，在第二芯片3的波长不低于第一芯片2的波长基础上，其光效可以进一步的提升。
在另一个实施方式中，如图6所示，第一芯片2a的表面中至少顶面(未标示)设置有不含红色荧光粉的第二波长荧光粉胶层6a，封装层5a进一步覆盖第二波长荧光粉胶层6a；且第二波长荧光粉胶层6a的荧光粉的峰值波长L 2小于封装层5a内第一波长荧光粉胶体层的荧光粉的峰值波长L 1，即在本实施例中，L 2＜L 1＜L 红。
需要说明的是，图6中仅在支撑件1a示意画出一颗第一芯片2a和第二芯片3a，可以根据实际发光光谱需要，相应增加第一芯片2a和第二芯片3a的颗数，如图7所示。
在本实施例中，第一芯片2a的峰值波长记作λA，λA＝390～445nm，第二芯片3a的峰值波长记作λB，λB＝445～550nm；且5≤λB－λA≤160nm；和/或，封装层5a内的第一波长荧光粉胶层中的荧光粉为绿色荧光粉、黄色荧光粉的任意一种或者两种的混合，且L 1＝510～590nm；第二波长荧光粉胶层6a中的荧光粉为绿色荧光粉、靛色荧光粉、青色荧光粉、黄色荧光粉和蓝色荧光粉的一种或者多种，且L 2＝470～590nm。
本实施例中封装体的具体激发方式可参见图8，作为本实施例优选的方案，将本实施例中的封装体采用SMD封装形式进行测试，且第二芯片3a的顶面和侧面均设置有长波长荧光粉胶层4a，在第一芯片2a的顶面和侧面设置有不含红色荧光粉的第二波长荧光粉胶层6a；三批次样品参数分别为：
HDK-S2-1的参数为：第一芯片2a选用峰值波长在445nm的LED芯片，第二芯片3a选用峰值波长在455nm的LED芯片；长波长荧光粉胶层4a中的荧光粉是红色荧光粉，封装层5a中的荧光粉是黄色荧光粉和绿色荧光粉的混合体，其荧光粉的峰值波长为520nm；不含红色荧光粉的第二波长荧光粉胶体层6a中的荧光粉为蓝色荧光粉，其荧光粉的峰值波长为475nm。
HDK-S2-2的参数为：第一芯片2a选用峰值波长在445nm的LED芯片，第二芯片3a选用峰值波长在450nm的LED芯片；红色荧光粉胶体层4a中的荧光粉是红色荧光粉，封装层5a内的荧光粉是黄色荧光粉和绿色荧光粉的混合 体，其荧光粉的峰值波长为520nm；不含红色荧光粉的第二波长荧光粉胶层6a中的荧光粉为蓝色荧光粉，其荧光粉的峰值波长为475nm。
HDK-S2-3的参数为：第一芯片2a选用峰值波长在445nm的LED芯片，第二芯片3a选用峰值波长在445nm的LED芯片；红色荧光粉胶体层4a中的荧光粉是红色荧光粉，封装层5a中的荧光粉是黄色荧光粉和绿色荧光粉的混合体，其荧光粉的峰值波长为520nm；不含红色荧光粉的第二波长荧光粉胶体层5a中的荧光粉为蓝色荧光粉，其荧光粉的峰值波长为475nm。
将上述三种样品与市场销售的某型号样品参数测试平均值进行对比，其数据如下表2所示。
表2：三种海迪科样品与市售样品参数测试平均值对照表
Figure PCTCN2019123375-appb-000003
从表2可以看出在相同的光源面积，本实施例所提供的光源光效更高；而在满足本实施例中第一芯片2a和第二芯片3a峰值波长差值的基础上，其光效可以进一步的提升。
本领域技术人员需要注意的是：本实施例中的高显指高光效封装体是以SMD封装为例，第一芯片2a、第二芯片3a是采用的倒装芯片结构；但实际应用中，不局限于该封装形式，还可以根据实际需要，采用COB封装、CSP封装或者灯丝条封装。但采用COB或灯丝条等封装形式时，优选为：第一芯片2a为倒装芯片或者垂直芯片结构，第二芯片3a采用正装芯片结构。
进一步，在又一个实施方式中，如图9所示，支撑件1c上与第一芯片2c同侧的表面还设置有至少一颗第三芯片7c，第一芯片2c的峰值波长记作λA， λA＝390～445nm，第三芯片7c的峰值波长记作λC，λC＝420～465nm，第二芯片3c的峰值波长记作λB，λB＝445～550nm；且0≤λB－λC≤130nm，15≤λC－λA≤130nm。
本领域技术人员应当了解，通常支撑件1c上的第一芯片2c、第三芯片7c和第二芯片3c，不局限于图9中一颗，可以根据实际发光光谱需要，相应增加第一芯片2c、第三芯片7c和第二芯片3c的颗数，如图10所示。
在本实施例中，第一芯片2c可选用峰值波长在390～430nm的紫光LED芯片，封装层5c内第一波长荧光粉胶层中的荧光粉为绿色荧光粉、黄色荧光粉中的任意一种或者两种的混合，且L 1＝510～590nm；第二波长荧光粉胶层6c中的荧光粉为靛色荧光粉、青色荧光粉和蓝色荧光粉的一种或者多种，且L 2＝470～510nm。
对于上述第一芯片2c、第二芯片3c、第三芯片4c可采用正装、倒装或垂直芯片结构，优选的，第一芯片2c采用倒装芯片或者垂直芯片结构，第二芯片3c、第三芯片4c采用正装芯片结构。
本实施例中封装体的具体激发方式可参见图11，作为本实施例优选的方案：以灯丝条封装的封装体为例，进行测试，且只在第二芯片3c的顶面设置有长波长荧光粉胶层4c，只在第一芯片2c的顶面设置有不含红色荧光粉的第二波长荧光粉胶层6c，三批次样品参数分别为：
HDK-S4-1：第一芯片2c选用峰值波长在430nm的LED芯片，第三芯片7c选用峰值波长在455nm的LED芯片，第二芯片3c选用峰值波长在465nm的LED芯片；长波长荧光粉胶层4c中的荧光粉为红色荧光粉，第二波长荧光粉胶层6c中的荧光粉是蓝色荧光粉，其发光峰值波长为475nm。封装层5c内第一波长荧光粉胶层中的荧光粉为绿色荧光粉和黄色荧光粉中的混合荧光粉，其发光峰值波长为530nm。
HDK-S4-2：第一芯片2c选用峰值波长在430nm的LED芯片，第三芯片7c选用峰值波长在445nm的LED芯片，第二芯片3c选用峰值波长在445nm的LED芯片；长波长荧光粉胶层4c中的荧光粉为红色荧光粉，第二波长荧光粉胶层6c中的荧光粉是蓝色荧光粉，其发光峰值波长为475nm。封装层5c内第一波长荧光粉胶层中的荧光粉为绿色荧光粉和黄色荧光粉中的混合荧光粉，其发光峰值波长为530nm。
HDK-S4-3：第一芯片2c选用峰值波长在430nm的LED芯片，第三芯片 7c选用峰值波长在430nm的LED芯片，第二芯片3c选用峰值波长在430nm的LED芯片；长波长荧光粉胶层4c中的荧光粉为红色荧光粉，第二波长荧光粉胶层6c中的荧光粉是蓝色荧光粉，其发光峰值波长为475nm。封装层5c内第一波长荧光粉胶层中的荧光粉为绿色荧光粉和黄色荧光粉中的混合荧光粉，其发光峰值波长为530nm。
将上述三种海迪科样品参数测试平均值进行测试，其数据如下表3所示。
表3：三种样品参数测试平均值对照表
Figure PCTCN2019123375-appb-000004
本实施例中封装体采用多芯片的灯丝条封装结构，当然，本实施例结构实际应用中，还可以根据实际需要，采用SMD封装、COB封装或者CSP封装。
更进一步，在又一个实施方式中，如图12所示，第三芯片7d的表面中至少顶面设置有不含红色荧光粉的第三波长荧光粉胶层8d，封装层5d进一步覆盖第三芯片7d以及第三波长荧光粉胶层8d；且第三波长荧光粉胶层8d的荧光粉峰值波长L 3大于第二波长荧光粉胶层6d内的荧光粉峰值波长L 2，且小于封装层5d第一波长荧光粉胶层内的荧光粉峰值波长L 1，即L 2＜L 3＜L 1。
在本实施例中，第一芯片2d可优先选用峰值波长在390～430nm的紫光LED芯片。第一波长荧光粉胶层中的荧光粉为绿色荧光粉、黄色荧光粉中的任意一种或者两种的混合，且L 1＝530～590nm；第二波长荧光粉胶层6d中的荧光粉为靛色荧光粉、青色荧光粉和蓝色荧光粉的一种或者多种，优选为蓝色荧光粉，且L 2＝470～510nm；第三波长荧光粉胶层8d的荧光粉为绿色荧光粉，且L 3＝510～540nm。上述几种荧光粉胶层中的胶体可以为环氧树脂、硅胶或聚酰亚胺中的一种或几种。本实施例的具体激发方式如图14所示。
此外，本领域技术人员应当知道，上述支撑件1d上设置的第一芯片2d、第二芯片3d和第三芯片7d不局限于一颗，也不局限于第一芯片2d、第二芯片3d和第三芯片7d的比例，可以根据实际发光光谱需要，相应调整各第一芯片2d、第二芯片3d和第三芯片7d的颗数。
更进一步，在又一个实施方式中，如图13所示，与图12中实施例相比， 支撑件1g上与第一芯片2g同侧的表面还设置有至少一颗第四芯片9g，第四芯片9g的峰值波长记作λD，λD＝420～465nm，封装层5g进一步覆盖第四芯片9g。第一芯片2g的波长记作λA，λA＝390～445nm，第三芯片7g的波长记作λC，λC＝420～465nm，第二芯片3g的波长记作λB，λB＝445～550nm；且0≤λB－λC≤130nm，15≤λC－λA≤130nm。第一芯片2g可优先选用波长在390～430nm的紫光LED芯片。
作为本实施例具体的方案，以与图13中所示结构相同的封装体为例，并进行测试，该测试样品采用的是双色COB封装结构，且只在第二芯片3g的顶面设置长波长荧光粉胶层4g，只在第三芯片7g的顶面设置不含红色荧光粉的的第三波长荧光粉胶层8g；只在第一芯片2g的顶面设置不含红色荧光粉的第二波长荧光粉胶层6g；三批次样品参数分别为：
HDK-S3-1样品参数：第四芯片9g选用峰值波长在455nm的LED芯片，第一芯片2g选用峰值波长在430nm的紫光LED芯片，第三芯片7g选用峰值波长在455nm的LED芯片，第二芯片3g选用峰值波长在465nm的LED芯片；长波长荧光粉胶层4g中的荧光粉为红色荧光粉，不含红色荧光粉的第二波长荧光粉胶层6g中的荧光粉为蓝色荧光粉，其发光峰值波长为475nm；第三波长荧光粉胶层8g中的荧光粉可以是绿色荧光粉，其发光峰值波长为515nm，封装层5g中不含红色荧光粉的第一波长荧光粉胶层中荧光粉，其发光峰值波长为530nm。
HDK-S3-2样品参数：第四芯片9g选用波长在455nm的LED芯片,第一芯片2g选用峰值波长在430nm的紫光LED芯片，第三芯片7g选用峰值波长在445nm的LED芯片，第二芯片3g选用峰值波长在445nm的LED芯片；长波长荧光粉胶层4g中的荧光粉为红色荧光粉，不含红色荧光粉的第二波长荧光粉胶层6g中的荧光粉为蓝色荧光粉，其发光峰值波长为475nm；第三波长荧光粉胶层8g中的荧光粉可以是绿色荧光粉，其发光峰值波长为515nm，封装层5g内不含红色荧光粉的第一波长荧光粉胶层中荧光粉，其发光峰值波长为530nm。
HDK-S3-3样品参数：第四芯片9g选用波长在455nm的LED芯片，第一芯片2g选用峰值波长在420nm的紫光LED芯片，第三芯片7g选用峰值波长在420nm的LED芯片，第二芯片3g选用峰值波长在420nm的LED芯片；长波长荧光粉胶层4g中的荧光粉为红色荧光粉，不含红色荧光粉的第二波长荧光粉胶层6g中的荧光粉为蓝色荧光粉，其发光峰值波长为475nm；第三波长荧光粉胶 层8g中的荧光粉可以是绿色荧光粉，其发光峰值波长为515nm，封装层5g内不含红色荧光粉的第一波长荧光粉胶层中荧光粉，其发光峰值波长为530nm。
上述样品的具体激发方式如图14所示，将上述三种海迪科样品参数测试平均值进行测试，其数据如下表4所示。
表4：三种海迪科样品参数测试平均值对照表
Figure PCTCN2019123375-appb-000005
本实施例第一芯片2g选用波长在390～430nm的紫光LED芯片，来激发第二波长荧光粉胶体层6g中的蓝色荧光粉。第二波长荧光粉胶体层6g中的蓝色荧光粉是全部覆盖在第一芯片2g的顶部和四周，因为只有采用比蓝光能量更高的紫光才可以激发蓝色荧光粉，所以采用本实施例的封装方式可以极大地提高紫光LED芯片激发荧光粉的激发效率。同时，如果能够满足本实施例中第一芯片2g、第二芯片3g和第三芯片7g波长差值，其光效可以进一步的提升。
此外，本实施例的基板上的第四芯片9g、第一芯片2g、第二芯片3g和第 三芯片7g，不局限于一颗，也不局限于第四芯片9g、第一芯片2g、第二芯片3g和第三芯片7g的比例，可以根据实际发光光谱需要，相应调整各第一芯片2g、第二芯片3g和第三芯片7g的颗数。
上述几种实施例中的封装体有效地解决了传统白光LED面临的技术难题。
第一，采用多个不同峰值波长的芯片激发可以兼顾到不同荧光粉的激发波长。对于495nm荧光粉，当激发光峰值波长在360nm-400nm时，相对激发效率可以达到80％以上。对于518nm、530nm、535nm的荧光粉，当激发光在420nm-470nm之间时相对激发效率在80％以上。而对于655、660荧光粉，当采用短波长蓝光激发时，虽然相对激发效率较高但是其斯托克斯位移较大，许多能量被晶格振动所吸收转化为热能。例如同样激发光子能量为1.89eV的655nm红光,采用光子能量为2.61eV的470nm蓝光激发，相对激发效率为60％，其光子能量损失为0.72eV，采用光子能量为2.81eV的440nm蓝光激发，相对激发效率为70％，其光子能量损失为0.92eV。即采用短波长激发虽然其激发效率提高了10％，但其中的光子能量损失却增加了28％。又考虑到红光激发光谱在450-500nm间变化平缓，相对激发效率从65％缓慢降低到55％。所以更适合选择峰值波长相对较长的450-500nm的光来激发红色荧光粉。未被吸收的激发光可以对光谱中缺失的蓝绿色光进行补偿，也可以用来激发外部的黄色或蓝绿色荧光粉，提高显色指数。
第二，采用多个不同峰值波长的芯片的封装体可以有效避免红色荧光粉对蓝绿光的二次吸收问题，只有极少的蓝绿光会照射到红色荧光粉上。这有利于提高光谱中蓝绿色的成分，从而提高显色指数。
第三，根据斯托克斯位移现象，对于同一种荧光粉，当激发光的峰值波长移动时，其发光峰值波长也会向对应的波长方向进行相对移动。因此本申请采用的长波长芯片激发红色荧光粉可以得到峰值波长较长的红光，采用短波长芯片激发蓝绿色荧光粉可以得到峰值波长较短的蓝绿光，使得带谱变宽，从而极大地提高显色指数。当采用短波长激发时，其发光光谱也会向短波移动。同样，采用较长波长激发时，其发光光谱会向长波移动。因此本申请采用的长波长芯片激发红色荧光粉，会使得发光波长红移，有利于获得更高的显色指数。对于蓝绿光也有同样的优点。
第四、通过改变光源中蓝红芯片的比例来改变色温。常规技术通过在整体荧光粉层内增加红色及其他荧光粉的量来改变光源的色温，这样会导致COB封 装的发光面颜色深且浑浊，而本申请是采用全红粉CSP芯片实现，通过改变全红粉CSP芯片的数量，如：在直径为12.3mm发光面上，一共布置有94颗尺寸为14mil×30mil的LED芯片，当目标光源色温为4000K时，此时全红粉CSP芯片数量为48颗，蓝光芯片数量为46颗；当目标光源色温为3000K时，此时全红粉CSP芯片数量为61颗，蓝光芯片数量为34颗，即：可通过改变光源中红光芯片与蓝光芯片的比例来实现色温的改变,而不像常规封装形式需要通过高精度天平精确地称量荧光粉，然后在整体封装层中改变红色荧光粉的混合浓度来实现色温的改变。这两种调节色温的方法，在外观上也能观察出来，本发明专利的高显色指数高光效的光源看起来更为清澈，蓝光芯片和红光CSP芯片清晰可辨。可直接通过改变光源中蓝红芯片的比例来实现色温的改变。
在又一个实施方式中，请再次参阅图2，第一芯片2的峰值波长记作λA，λA＝420～465nm，第二芯片3的峰值波长记作λB，λB＝445～550nm；且0≤λB－λA≤130nm。此时第一芯片2为第一波长蓝光芯片，第二芯片3为第二波长蓝光芯片。长波长荧光粉胶层4由胶体与发射波长为600-1000nm的长波长荧光粉混合而成；且长波长荧光粉胶层4中长波长荧光粉与胶体的粉胶重量比为0.2～5：1；和/或，封装层5内第一波长荧光粉胶层内含有发射波长为500-550nm的绿色荧光粉和发射波长为550-600nm的黄色荧光粉中的任意一种或两种，且不含有发射波长为450-500nm的蓝色荧光粉与发射波长为600-1000nm的长波长荧光粉。
当封装体整体要求的色温高于4500K时，第二芯片3的数量占第一芯片2和第二芯片3数量总和的5～30％；当封装体整体要求的色温低于或等于4500K时，第二芯片3的数量占第一芯片2和第二芯片3数量总和的30～80％。
优选的，长波长荧光粉胶层4设置在第二芯片3的顶面与侧面上形成CSP封装结构，或设置在第二芯片3的顶面形成WLP封装结构，长波长荧光粉胶层4设置在第二芯片3的顶面的厚度在20～400um，第二芯片3的侧面的厚度在0～400um(例如，20～400um)。
优选的，发射波长为600-1000nm的长波长荧光粉采用红色荧光粉和近红外荧光粉中的任意一种或两者的混合。
在应用于肉制品的照明时，牛肉类优选长波长荧光粉中含有波长在658～660nm的红色荧光粉，且波长在658～660nm的红色荧光粉重量占长波长荧光粉重量的一半以上。猪肉类优选长波长荧光粉为波长在605～630nm的红色荧 光粉，且不含有超过630nm的荧光粉。
上述结构的封装体采用多个不同波长的芯片激发可以兼顾到不同荧光粉的激发波长，即可以实现短波长芯片激发短波长荧光粉，长波长芯片激发长波长荧光粉，同时可以避免由于短波长荧光粉产生的短波长荧光再一次激发长波长荧光粉而被再吸收；最佳的激发波长，实现最高的量子效率，同时提高光源的光效。
采用多个不同波长的芯片的封装结构，与常规技术的区别在于，其中的长波长荧光粉采用CSP或WLP技术封装在芯片的顶面及侧面的局域范围内，只有极少的短波长和中波长荧光会照射到长波长荧光粉上，可以有效避免长波长荧光粉对蓝、绿荧光的二次吸收问题，从而提高光效的同时并提升显色指数。
同时，根据斯托克斯位移现象，对于同一种荧光粉，当激发光的波长移动时，其发光波长也会向对应的波长方向进行相对移动；因此本申请采用的长波长芯片激发长波长荧光粉可以得到波长较长的红色荧光，采用短波长芯片激发蓝、绿色荧光粉可以得到波长较短的蓝、绿荧光，使得荧光带谱变宽，从而进一步提高显色指数。
更重要的是：本申请所提供的封装体可通过改变光源中第一芯片与第二芯片的比例来改变色温。相较常规技术中需要通过不断调节整体荧光粉层的荧光粉配比及量来改变光源的色温，导致COB封装的发光面颜色深且浑浊的问题。而本申请是采用全红粉的CSP芯片实现，可通过改变光源中红光芯片与蓝光芯片的比例来实现色温的改变,而不像常规封装形式需要通过高精度天平精确地称量荧光粉，然后在整体封装层中改变长波长荧光粉的混合浓度来实现色温的改变。
进一步，请参阅图15，在本实施例中，支撑件1e上除了包括第一芯片2e和第二芯片3e外，与第一芯片2e同侧的表面还设置有至少一颗第三芯片9e，第三芯片9e为紫光或近紫外芯片，且第二芯片2e的至少顶面设置有长波长荧光粉胶层4e，第三芯片9e表面设置有短波长荧光粉胶层10e。
其中，第一芯片2e为第一波长蓝光芯片，其峰值波长记作λA，λA＝420～465nm；第二芯片3e为第二波长蓝光芯片，其峰值波长记作λB，λB＝445～550nm；第三芯片3e的峰值波长记作λC，λC＝370-420nm；且0≤λB－λA≤130nm。
长波长荧光粉胶层4e由胶体与发射波长为600-1000nm的长波长荧光粉混 合而成；且长波长荧光粉胶层4e中长波长荧光粉与胶体的粉胶重量比为0.2～5：1；短波长荧光粉胶层10e由胶体与发射波长为450-500nm的短波长荧光粉混合而成；其中，短波长荧光粉胶层10e中短波长荧光粉与胶体的粉胶重量比为0.2～5：1，和/或，第三芯片9e与第一芯片2e的数量比为1:1～5。
其中，短波长荧光粉胶层10e设置在紫光或近紫外芯片(即第三芯片9e)的顶面与侧面上形成CSP封装结构，或设置在紫光或近紫外芯片(即第三芯片9e)的顶面形成WLP封装结构；通常，短波长荧光粉胶层10e设置在紫光或近紫外芯片(即第三芯片9e)的顶面的厚度在20～400um，在紫光或近紫外芯片(即第三芯片9e)的侧面的厚度在0～400um。
在海鲜灯应用场景下，短波长荧光粉胶层10e中短波长荧光粉与胶体的粉胶重量比大于2～5：1；且第三芯片9e与第一芯片2e的数量比为1:1～3。
其中，长波长荧光粉胶层4e设置在第二芯片3e的顶面与侧面上形成CSP封装结构，或设置在第二芯片3e的顶面形成WLP封装结构；通常，长波长荧光粉胶层4e设置在第二芯片3e的顶面的厚度在20～400um，在第二芯片4e的侧面的厚度在0～400um。封装层5e中发射波长为600-1000nm的长波长荧光粉采用红色荧光粉和近红外荧光粉中的任意一种或两者的混合。
上述结构的封装体的有益效果为：上述含紫光或近紫外芯片的光谱调光封装体，采用多个不同波长的芯片激发可以兼顾到不同荧光粉的激发波长，即可以实现短波长芯片激发短波长荧光粉，长波长芯片激发长波长荧光粉，同时可以避免由于短波长荧光粉产生的短波长荧光再一次激发长波长荧光粉而被再吸收；最佳的激发波长，实现最高的量子效率，同时提高光源的光效。
采用多个不同波长的芯片的封装结构，与常规技术的区别在于，其中的长波长荧光粉采用CSP或WLP技术封装在芯片的顶面及侧面的局域范围内，只有极少的短波长和中波长荧光会照射到长波长荧光粉上，可以有效避免长波长荧光粉对青、蓝、绿荧光的二次吸收问题。特别是青色荧光激发效率低，可以有效减少青色荧光的二次损耗，从而提高光效的同时并提升显色指数。
同时，根据斯托克斯位移现象，对于同一种荧光粉，当激发光的波长移动时，其发光波长也会向对应的波长方向进行相对移动；因此本申请采用的长波长芯片激发长波长荧光粉可以得到波长较长的红色荧光，采用短波长芯片激发青、蓝、绿色荧光粉可以得到波长较短的青、蓝、绿荧光，使得荧光带谱变宽，从而进一步提高显色指数。
更重要的是：本申请可直接通过改变光源中第一芯片与第二芯片的比例来改变色温。相较常规技术中需要通过不断调节整体荧光粉层的荧光粉配比及量来改变光源的色温，导致COB封装的发光面颜色深且浑浊的问题。而本发明是采用全红粉的CSP芯片实现，可通过改变光源中红光芯片与蓝光芯片的比例来实现色温的改变,而不像常规封装形式需要通过高精度天平精确地称量荧光粉，然后在整体封装层中改变长波长荧光粉的混合浓度来实现色温的改变。
在又一个实施方式中，请参阅图16，支撑件1f上除了设置有第一芯片2f、第二芯片3f外，与第一芯片2f同侧的表面还设置有至少一颗第三芯片11f和至少一颗第四芯片12f；其中，第一芯片2f为第一波长蓝光芯片，第一芯片2f的峰值波长记作λA，λA＝420～465nm；第二芯片3f为第二波长蓝光芯片，第二芯片3f的峰值波长记作λB，λB＝445～550nm；且第二芯片3f表面设置有长波长荧光粉胶层4f形成；且长波长荧光粉胶层4f中长波长荧光粉与胶体的粉胶重量比为0.2～5：1；第三芯片11f为紫光芯片，第三芯片11f的峰值波长记作λC，λC＝400～420nm，其表面设置有短波长荧光粉胶层13f；第四芯片12f为近紫外芯片或在近紫外芯片，第四芯片12f的峰值波长记作λD，λD＝370-400nm，其表面可以设置(如图16所示)或者不设置(如图17所示)短波长荧光粉胶层13f。
在本实施例中，长波长荧光粉胶层4f由胶体与发射波长为600-980nm的长波长荧光粉混合而成，且长波长荧光粉胶层4f中长波长荧光粉与胶体的粉胶重量比为0.2～5：1；第三芯片11f和第四芯片12f上设置的短波长荧光粉胶层13f由胶体与发射波长为450-500nm的蓝色荧光粉混合而成；其中，短波长荧光粉胶层13f中蓝色荧光粉与胶体的粉胶重量比为0.2～5：1；和/或，第二芯片3f占第一芯片1f、第二芯片3f、第三芯片11f、第四芯片12f数量总和的50～75％；和/或，第三芯片11f和第四芯片12f之间的数量比例为1:1～3；和/或，第一芯片2f的数量与第三芯片11f、第四芯片12f两者的总数量之间的比例为2:0.5～2；
优选地，短波长荧光粉胶层13f同时设置在对应的芯片顶面与侧面上形成CSP封装结构或者设置在对应的芯片的顶面形成WLP封装结构，短波长荧光粉胶层13f设置在对应的芯片的顶面的厚度在20～400um，在对应的芯片的侧面的厚度在0～400um。
长波长荧光粉胶层4f设置在第二芯片3f的顶面与侧面上形成CSP封装结构，或设置在第三芯片11f的顶面形成WLP封装结构；长波长荧光粉胶层4f 设置在第二芯片3f的顶面的厚度在20～400um，在第二芯片3f的侧面的厚度在0～400um。发射波长为600-980nm的长波长荧光粉采用红色荧光粉和近红外荧光粉中的任意一种或两者的混合。
本实施方式的有益效果为：采用多个特定波长芯片与荧光粉层进行配合，其具备多光谱，既具有可以帮助植物加速生长、光合作用和促进开花的长波长波段，也具有短波长波段，用于增加花青素、叶黄素等具有抗氧化作用植物化学成分的含量，其同时可使得植物的叶片更厚、颜色更鲜艳。能够最大程度促进特定作物的生长，因此种植者可根据每种作物的特定需求定制光。灯具光量子效率为3.75umol/J(微摩尔/焦尔)。灯具工作寿命为36000小时，而高压钠灯的工作寿命仅8000小时，相比高压钠灯等系统，光输出很高，但产生的热量很少，能够提供理想的光谱以促进作物的最佳生长，同时节省降温成本。
采用多个不同波长的芯片激发可以兼顾到不同荧光粉的激发波长，即可以实现短波长芯片激发短波长荧光粉，长波长芯片激发长波长荧光粉，同时可以避免由于短波长荧光粉产生的短波长荧光再一次激发长波长荧光粉而被再吸收；最佳的激发波长，实现最高的量子效率，同时提高光源的光效。同时，可直接通过改变光源中第一芯片与第二芯片的比例来改变色温。相较常规技术中需要通过不断调节整体荧光粉层的荧光粉配比及量来改变光源的色温，导致COB封装的发光面颜色深且浑浊的问题。而本申请是采用全红粉的CSP芯片实现，可通过改变光源中红光芯片与蓝光芯片的比例来实现色温的改变,而不像常规封装形式需要通过高精度天平精确地称量荧光粉，然后在整体封装层中改变长波长荧光粉的混合浓度来实现色温的改变。
下面从封装体制备方法的角度，对本申请所提供的封装体的制备方法作进一步说明。本申请所提供的制备方法包括：
步骤S1：提供至少一颗第一芯片和至少一颗第二芯片，且第二芯片的表面中的至少顶面设置有长波长荧光粉胶层。
在一个实施方式中，第一芯片为第一波长蓝光芯片、第二芯片为第二波长蓝光芯片；在第二芯片表面中的至少顶面设置设制作长波长荧光粉胶层得到WLP或CSP封装形式的长波长封装体，长波长荧光粉胶层由胶体与发射波长为600-1000nm的长波长荧光粉混合而成，控制长波长荧光粉胶层中胶体与长波长荧光粉的粉胶比为0.2～5：1；本领域技术人员应当明白，粉胶比是指胶与粉的质量比，各色荧光粉的波长是指波长。
在又一个实施方式中，第一芯片为第一波长蓝光芯片、第二芯片为第二波长蓝光芯片，上述步骤S1中还可提供第三芯片，第三芯片为紫光或近紫外芯片；在第二芯片表面中的至少顶面设置设制作长波长荧光粉胶层得到WLP或CSP封装形式的长波长封装体，长波长荧光粉胶层由胶体与发射波长为600-1000nm的长波长荧光粉混合而成，控制长波长荧光粉胶层中胶体与长波长荧光粉的粉胶比为0.2～5：1；在第三芯片表面制作有短波长荧光粉胶层得到WLP或CSP封装形式的短波长封装体，其中，短波长荧光粉胶层由胶体与发射波长为450-500nm的短波长荧光粉混合而成；控制短波长荧光粉胶层中短波长荧光粉与胶体的粉胶比为0.2～5：1。
在又一个实施方式中，第一芯片为第一波长蓝光芯片、第二芯片为第二波长蓝光芯片，上述步骤S1中还可提供第三芯片和第四芯片，第三芯片为紫光芯片，且表面设置有蓝色荧光粉胶层，第四芯片为近紫外芯片或在近紫外芯片，其表面可以设置或者不设置蓝色荧光粉胶层，第三芯片、第四芯片的蓝色荧光粉胶层由胶体与发射波长为450-500nm的蓝色荧光粉混合而成；且蓝色荧光粉胶层中蓝色荧光粉与胶体的粉胶重量比为0.2～5：1。
步骤S2：根据最终封装体的色温要求，设定第二芯片占总芯片数量的比例，对照选择数量比例后第二芯片在CIE色度图上对应的色点坐标，记作红点(X1；Y1)；对照选择数量比例后第二芯片在CIE色度图上对应的色点坐标，记作蓝点(X2；Y2)。
在一个实施方式中，当封装体包括步骤S1中的第一芯片和第二芯片时，上述步骤S2具体包括：当封装体整体要求的色温高于4500K时，第二芯片的数量占芯片数量总和的5～30％；当封装体整体要求的色温低于或等于4500K时，第二芯片的数量占芯片数量总和的30～80％；对照选择数量比例后第二芯片在CIE色度图上对应的色点坐标，记作红点(X1；Y1)；对照选择数量比例后第一芯片在CIE色度图上对应的色点坐标，记作蓝点(X2；Y2)。
在又一个实施方式中，当封装体包括步骤S1中的第一芯片、第二芯片和第三芯片时，上述步骤S2具体包括：根据最终含紫光或近紫外芯片的光谱调光封装体色温要求，选择第二芯片占总芯片数量的比例：当封装体整体要求的色温高于4500K时，第二芯片的数量占芯片数量总和的5～30％；当封装体整体要求的色温低于或等于4500K时，第二芯片的数量占芯片数量总和的30～80％；对照选择数量比例后第二芯片在CIE色度图上对应的色点坐标，记作红点(X1；Y1)； 然后根据第一芯片峰值波长λA和480nm在光谱中的相对高度，选择第三芯片与第一芯片的数量比在1:1～5之内；对照选择数量比例后第三芯片与第一芯片在CIE色度图上对应的色点坐标，记作混合蓝点(X2；Y2)。
在又一个实施方式中，当封装体包括步骤S1中的第一芯片、第二芯片、第三芯片和第四芯片时，上述步骤S2具体包括：根据类太阳光谱的植物照明封装体的色温要求，初步选择第二芯片占总芯片数量的比例：第二芯片占第一芯片、第二芯片、第三芯片、第四芯片数量总和的50～75％；对照选择数量比例后第二芯片在CIE色度图上对应的色点坐标，记作红点(X1；Y1)；将第三芯片和第四芯片之间的比例设置为1:1～3；确定第一芯片的数量，使得第一芯片与第三芯片、第四芯片两者的总数之间的比例为2:0.5～2；对照选择数量比例后第一芯片在CIE色度图上对应的色点坐标，记作蓝点(X2；Y2)。
步骤S3：色温的预控制：将第一芯片、第二芯片分别固晶到支撑件上对应的位置；并点亮，得到点亮后封装体对应在CIE色度图上的色点位置，记作混合点(X3；Y3)，且确保0.08≤Y3≤0.30，0.22≤X3≤0.43；从而对色温范围进行预控制；若不在该范围内则重新进行步骤S2。
在一个实施方式中，当封装体包括步骤S1中的第一芯片和第二芯片时，上述步骤S3具体包括确保0.08≤Y3≤0.20，0.22≤X3≤0.43。
在又一个实施方式中，当封装体包括步骤S1中的第一芯片、第二芯片、第三芯片时，上述步骤S3具体包括确保0.09≤Y3≤0.20，0.22≤X3≤0.37。
在又一个实施方式中，当封装体包括步骤S1中的第一芯片、第二芯片、第三芯片、第四芯片时，上述步骤S3具体包括确保0.16≤Y3≤0.30，0.28≤X3≤0.42。
步骤S4：再根据最终光谱调光封装体色温要求，查找该最终色温在CIE色度图普朗克轨迹上对应的色点坐标，记作白点(X4；Y4)；通过已知的红点(X1；Y1)、蓝点(X2；Y2)、混合点(X3；Y3)、白点(X4；Y4)来得到所需绿点(X5；Y5)具体的坐标值或坐标范围；再根据该坐标值或坐标范围选择合适配比的第一波长荧光粉，再混合到胶体内形成第一波长荧光粉胶层；利用第一波长荧光粉胶层将第一芯片、第二芯片整体封装在支撑件形成封装层；再升高温度进行固化，得到成品。
在一个实施方式中，上述步骤S4中选择合适配比的第一波长荧光粉包括：选择合适配比的发射波长为500-550nm的绿色荧光粉和发射波长为550-600nm 的黄色荧光粉。
步骤S5：检测成品的发光光谱和色温是否符合设计要求，若最终在CIE色度图上对应的色点相对普朗克轨迹偏差，则对应调整封装层中第一波长荧光粉的配比；若色温不符合要求，则直接调整第二芯片占芯片总和的占比再重复步骤S3～S5。
在一个实施方式中，上述步骤S5中若最终在CIE色度图上对应的色点相对普朗克轨迹偏差，则对应调整封装层中第一波长荧光粉的配比，包括：若最终在CIE色度图上对应的色点相对普朗克轨迹偏上或偏下，那么分别相应降低或增加外部胶体中的绿色荧光粉和黄色荧光粉的粉量。
在又一个实施方式中，当封装体中包括上述步骤S1中第一芯片、第二芯片和第三芯片时，上述步骤S5还包括：若发光光谱不符合要求，则直接调整第三芯片的数量后再重复步骤S3～S5。
在又一个实施方式中，当封装体中包括上述步骤S1中第一芯片、第二芯片、第三芯片和第四芯片时，上述步骤S5还包括：若发光光谱不符合要求，则根据铺对应的波段直接调整第一芯片、第三芯片和第四芯片的数量后再重复步骤S3～S5。
下面以几个具体实施例，对本申请所提供的封装体的制备方法作进一步说明。
实施例一：制作色温4000K的光谱调光封装体。
第一芯片为蓝光芯片，规格为14*30mil，峰值波长λA为452nm；
第二芯片为蓝光芯片，规格为14*30mil，峰值波长λB为465nm，长波长荧光粉胶层中包括长波长荧光粉和胶体，长波长荧光粉胶层中长波长荧光粉的波长620nm，胶重量比为1.7：1；长波长荧光粉胶层在第二芯片顶面的厚度为200微米，在第二芯片侧面的厚度为120微米；
整个光谱调光封装体的芯片总量在40～50颗，本实施例中，第二芯片数量为22颗，第一芯片数量为23颗，在CIE色度图上，第二芯片对应红点坐标为(0.5，0.28)，第一芯片对应蓝点坐标为(0.0149，0.0317)，混合点坐标为(0.2413，0.0877)，色温对应的坐标为(0.378,0.377)。
本实施例封装层中各组分的重量比为胶体70％、绿色荧光粉27％、黄色荧光粉粉3％。
实施例二：制作色温3000K的光谱调光封装体，可应用于牛肉等肉类的照 明。
第一芯片为蓝光芯片，规格为14*30mil，峰值波长λA为452nm；
第二芯片为蓝光芯片，规格为14*30mil，峰值波长λB为465nm，长波长荧光粉胶层中长波长荧光粉采用混合荧光粉，其中，658～660nm波长的红色荧光粉重量大于70％，其余为627nm波长的红色荧光粉,长波长荧光粉胶层中长波长荧光粉与胶体的粉胶重量比为3：1；长波长荧光粉胶层在第二芯片顶面的厚度为200微米，在第二芯片侧面的厚度为120微米；
整个光谱调光封装体的芯片总量在50颗左右，本实施例中，第二芯片数量为28颗，第一芯片数量为23颗，在CIE色度图上，第二芯片对应红点坐标为(0.54，0.28)，第一芯片对应蓝点坐标为(0.0149，0.0317)，混合点坐标为(0.3224，0.1433)，色温对应的坐标为(0.418,0.4115)。
本实施例封装层中各组分的重量比为胶体65％、绿色荧光粉24％、黄色荧光粉粉16％。
实施例三：制作色温6500K的光谱调光封装体，应用于海鲜类的照明。
第一芯片为蓝光芯片，规格为14*30mil，峰值波长λA为452nm；
第二芯片为蓝光芯片，规格为14*30mil，峰值波长λB为465nm，长波长荧光粉胶层中长波长荧光粉全部为波长620nm的红粉，长波长荧光粉胶层中长波长荧光粉与胶体的粉胶重量比为0.2：1；长波长荧光粉胶层在第二芯片顶面的厚度为200微米，在第二芯片侧面的厚度为120微米；
整个光谱调光封装体的芯片总量在30颗左右，本实施例中，第二芯片数量为8颗，第一芯片数量为20颗，在CIE色度图上，第二芯片对应红点坐标为(0.43，0.21)，第一芯片对应蓝点坐标为(0.0149，0.0317)，混合点坐标为(0.2205，0.08017)，色温对应的坐标为(0.3187,0.3255)。
本实施例封装层中各组分的重量比为胶体69％、绿色荧光粉25％、黄色荧光粉6％。
实施例四：制作色温2500K的光谱调光封装结构。
第一芯片为蓝光芯片，规格为14*30mil，峰值波长λA为452nm；
第二芯片为蓝光芯片，规格为14*30mil，峰值波长λB为465nm，长波长荧光粉胶层中长波长荧光粉全部为波长650nm的红粉，长波长荧光粉胶层中长波长荧光粉与胶体的粉胶重量比为5：1；长波长荧光粉胶层在第二芯片顶面的厚度为200微米，在第二芯片侧面的厚度为120微米；
整个光谱调光封装体的芯片总量在40颗左右，本实施例中，第二芯片数量为8颗，第一芯片数量为20颗，在CIE色度图上，第二芯片对应红点坐标为(0.58，0.305)，第一芯片对应蓝点坐标为(0.0149，0.0317)，混合点坐标为(0.4101，0.2073)，色温对应的坐标为(0.483，0.428)。
本实施例封装层中各组分的重量比为胶体60％、绿色荧光粉20％、黄色荧光粉粉20％。
采用上述COB封装形式的4个实施例的光谱调光封装结构与4000K的传统1919COB封装结构进行比对，其测试数据如下表5所示(样本数10/个)，上述4个实施例的光谱调光封装结构采用COB封装形式的光谱图分别参见图18-21。
表5：实施例一至实施例四与传统封装体测试数据对照表
Figure PCTCN2019123375-appb-000006
从以上表格5和光谱图18-21中可以得出：本申请所提供的光谱调光封装体的封装层内芯片清晰可辨，避免由于短波长荧光粉产生的短波长荧光再一次激发长波长荧光粉而被再吸收，使得大部分实施例的光源光效能够提高11％以上，散热效果好；而荧光带谱变宽，显色指数得到小幅提升；而通过改变光源中红光芯片与蓝光芯片的比例来实现色温的改变，不仅仅避免常规结构下通过 高精度天平精确地称量荧光粉，更重要的是其用粉量大幅降低。
实施例五：制作4000K色温光谱调光封装体；
第一芯片为蓝光芯片，其规格为14*30mil，峰值波长λA为452nm；
第二芯片为蓝光芯片，其规格为14*30mil，其峰值波长λB为465nm；
长波长荧光粉胶层波长为650nm，长波长荧光粉胶层粉胶比为1.7：1，长波长荧光粉胶层在第二芯片顶面的厚度200微米，侧面的厚度为0微米，即侧面没有；第三芯片为紫光或近紫外芯片，其规格为14*30mil，波长λC为410nm，短波长荧光粉胶层波长480nm，短波长荧光粉胶层粉胶比2：1，短波长荧光粉胶层厚度在紫光或近紫外芯片顶部为300微米，在侧面为120微米。
整个光谱调光封装体的芯片总量在40～50颗，根据比例初步选择第二芯片数量为18颗，第二芯片在CIE色度图上对应红点坐标为(0.32，0.14)；第三芯片与第一芯片的数量分别为7颗、20颗，在CIE色度图上，第一芯片与第三芯片结合对应坐标(0.162，0.22)；混合点坐标为(0.28，0.124)，色温对应的CIE色度图坐标为(0.384，0.379)；本实施例封装层中各组分的重量比为胶体70％、绿色荧光粉28％、黄色荧光粉粉2％。
实施例六：3000K色温光谱调光封装体。
第一芯片为蓝光芯片，其规格为14*30mil，峰值波长λA为452nm；
第二芯片为蓝光芯片，其规格为14*30mil，其峰值波长λB为465nm，长波长荧光粉胶层波长为650nm，长波长荧光粉胶层粉胶比为4：1，长波长荧光粉胶层在第二芯片顶面的厚度200微米，侧面的厚度为120微米；
第三芯片为紫光或近紫外芯片，其规格为14*30mil，峰值波长λC为410nm，短波长荧光粉胶层波长480nm，短波长荧光粉胶层粉胶比2：1，短波长荧光粉胶层厚度在紫光或近紫外芯片顶部为300微米，在侧面为120微米；
整个光谱调光封装结构的芯片总量在40～50颗，根据比例初步选择第二芯片数量为22颗，第二芯片在CIE色度图上对应红点坐标为(0.384，0.131)；第三芯片与第一芯片的数量分别为5颗、18颗，在CIE色度图上，第三芯片与第一芯片结合对应坐标(0.162，0.21)；混合点坐标为(0.3121，0.1453)，色温对应的CIE色度图坐标为(0.442，0.402)；本实施例封装层中各组分的重量比为胶体70％、绿色荧光粉20％、黄色荧光粉粉10％。
实施例七：5000K色温光谱调光封装体，其应用于冰鲜灯。
第一芯片为蓝光芯片，其规格为14*30mil，峰值波长λA为452nm；
第二芯片为蓝光芯片，其规格为14*30mil，其峰值波长λB为465nm，长波长荧光粉胶层波长为650nm，长波长荧光粉胶层粉胶比为0.2：1，长波长荧光粉胶层在第二芯片顶面的厚度200微米，侧面的厚度为0微米；
第三芯片为紫光或近紫外芯片，其规格为14*30mil，波长λC为410nm，短波长荧光粉胶层波长480nm，短波长荧光粉胶层粉胶比5：1，短波长荧光粉胶层厚度在紫光或近紫外芯片顶部为400微米，在侧面为120微米；
整个光谱调光封装体的芯片设计总量在30～40颗，根据比例初步选择第二芯片数量为10颗，第二芯片在CIE色度图上对应红点坐标为(0.26，0.1)；第三芯片与第一芯片的数量分别为9颗、18颗，在CIE色度图上，第三芯片与第一芯片结合对应坐标(0.163，0.246)；混合点坐标(0.24，0.0965)，色温对应的CIE色度图坐标为(0.345，0.359)；本实施例封装层中各组分的重量比为胶体73％、绿色荧光粉22％、黄色荧光粉粉5％。
实施例八：制作2800K色温光谱调光封装体，其应用于冰鲜灯：
第一芯片为蓝光芯片，其规格为14*30mil，峰值波长λA为452nm；
第二芯片为蓝光芯片，其规格为14*30mil，峰值波长λA为465nm，长波长荧光粉胶层波长为650nm，长波长荧光粉胶层粉胶比为5：1，长波长荧光粉胶层在第二芯片顶面的厚度400微米，侧面的厚度为120微米；
第三芯片为紫光或近紫外芯片，其规格为14*30mil，峰值波长λC为410nm，短波长荧光粉胶层波长480nm，短波长荧光粉胶层粉胶比0.5：1，短波长荧光粉胶层厚度在紫光或近紫外芯片顶部为100微米，在侧面为0微米；
整个光谱调光封装体的芯片设计总量在40～50颗，根据比例初步选择第二芯片数量为20颗，第二芯片在CIE色度图上对应红点坐标为(0.483，0.24)；第三芯片与第一芯片的数量分别为7颗、18颗，在CIE色度图上，第一芯片与第三芯片结合对应坐标(0.161，0.18)；混合点坐标为(0.3598，0.1896)，色温对应的CIE色度图坐标为(0.483，0.428)；
本实施例封装层中各组分的重量比为胶体70％、绿色荧光粉18％、黄色荧光粉粉12％。
上述实施例五-实施例八4个实施例的光谱调光封装体采用COB封装形式与4000K的传统1919COB封装结构进行比对，其测试数据如下表6所示(样本数10/个)：上述实施例五-实施例八4个实施例的光谱调光封装体采用COB封装形式的光谱图分别参见图22-25。
表6：实施例五至实施例八与传统封装体测试数据对照表
Figure PCTCN2019123375-appb-000007
从上述表格6以及图22-25可以看出，上述实施例所提供的封装体内的封装层内芯片清晰可辨，避免由于短波长荧光粉产生的短波长荧光再一次激发长波长荧光粉而被再吸收，使得光源的光效能够提高7％以上，散热效果好；而荧光带谱变宽，显色指数得到小幅提升；而通过改变光源中红光芯片与蓝光芯片的比例来实现色温的改变，不仅仅避免常规结构下通过高精度天平精确地称量荧光粉，更重要的是其用粉量大幅降低。
实施例九：5000K的类太阳光谱的植物照明封装体；
第一芯片为蓝光芯片，其规格为14*30mil，其峰值波长λA为445nm；
第二芯片为蓝光芯片，其规格为14*30mil，其峰值波长λB为465nm，长波长荧光粉胶层的波长为600nm，长波长荧光粉胶层粉胶比为0.2：1，长波长荧光粉胶层在第二芯片顶部的厚度为200微米，在第二芯片侧面的厚度为120微米；
第三芯片为紫光芯片，其规格为14*30mil，其峰值波长λC为410nm；第四芯片为近紫光芯片，其规格为14*30mil，其峰值波长λD为380nm，短波长荧光粉胶层波长为480nm，短波长荧光粉胶层粉胶比为5：1，短波长荧光粉胶层覆盖在紫光芯片和近紫光芯片外的表面形成CSP封装，其顶部厚度400微米、侧面120微米。
整个植物照明封装体的芯片设计总量在140颗左右，其中，第一芯片、第二芯片、第三芯片与第四芯片的数量分别为43颗、70颗、9颗、18颗；第二芯片在CIE色度图上的红点坐标为(0.4239，0.2196)，第一芯片在CIE色度图上的蓝点坐标为(0.1631，0.2457),混合点坐标为(0.3103，0.1819)，色温对应的CIE色度图坐标为(0.3453，0.3542)。本实施例封装层中中各组分的重量占比为：胶体70％、绿色荧光粉粉25％、黄色荧光粉粉5％。
实施例十：4000K的类太阳光谱的植物照明封装体；
第一芯片为蓝光芯片，其规格为14*30mil，其峰值波长λA为452nm；
第二芯片为蓝光芯片，其规格为14*30mil，其峰值波长λB为465nm，长波长荧光粉胶层的波长为650nm，长波长荧光粉胶层粉胶比为2：1，长波长荧光粉胶层在第二芯片顶部的厚度为200微米，在第二芯片侧面的厚度为120微米；
第三芯片为紫光芯片，其规格为14*30mil，其峰值波长λC为410nm，短波长荧光粉胶层波长为480nm，短波长荧光粉胶层粉胶比为1.7：1，短波长荧光粉胶层覆盖在紫光芯片表面形成WLP封装，其顶部厚度400微米、侧面0微米。
第四芯片为近紫光芯片，其规格为14*30mil，其峰值波长λD为380nm，本实施例中，近紫外芯片表面不设置蓝色荧光粉胶层形成。
整个植物照明封装体的芯片设计总量在140颗左右，其中，第一芯片、第二芯片、第三芯片与第四芯片的数量分别为34颗、80颗、8颗、18颗；第二芯片在CIE色度图上的红点坐标为(0.4509,0.2447)，第一芯片在CIE色度图上的蓝点坐标为(0.163,0.2441),混合点坐标为(0.3557,0.1774)，色温对应的CIE色度图坐标为(0.378,0.364)。本实施例封装层中中各组分的重量占比为：胶体65％、绿色荧光粉粉26％、黄色荧光粉粉14％。
实施例十一：3000K的类太阳光谱的植物照明封装体；
第一芯片为蓝光芯片，其规格为14*30mil，其峰值波长λA为452nm；
第二芯片为蓝光芯片，其规格为14*30mil，其峰值波长λB为465nm，长波长荧光粉胶层中荧光粉选择677nm与850nm波长的各一半，长波长荧光粉胶层粉胶比为5：1，长波长荧光粉胶层在第二芯片顶部的厚度为200微米，在第二芯片侧面的厚度为120微米；
第三芯片为紫光芯片，其规格为14*30mil，其峰值波长λC为410nm，短波长荧光粉胶层波长为480nm，短波长荧光粉胶层粉胶比为0.2：1，短波长荧光粉胶层覆盖在紫光芯片表面形成WLP封装，其顶部厚度200微米、侧面0微米。
第四芯片为近紫光芯片，其规格为14*30mil，其峰值波长λD为385nm，本实施例中，近紫外芯片表面不设置蓝色荧光粉胶层形成。
整个植物照明封装体的芯片设计总量在200颗左右，其中，第一芯片、第二芯片、第三芯片与第四芯片的数量分别为25颗、150颗、7颗、18颗；第二芯片在CIE色度图上的红点坐标为(0.4852，0.2883)，第一芯片在CIE色度图上的蓝点坐标为(0.1621，0.2432),混合点(0.4001，0.2103)，色温对应的CIE色度图坐标为(0.4367，0.4043)。本实施例封装层中中各组分的重量占比为：胶体60％、绿色荧光粉粉28％、黄色荧光粉粉12％。
上述实施例九-实施例十一3个实施例的光谱调光封装体采用COB封装形式与传统封装结构进行比对，其测试数据如下表7所示(样本数12/个)：
表7：实施例九至实施例十一与传统封装体测试数据对照表
Figure PCTCN2019123375-appb-000008
Figure PCTCN2019123375-appb-000009
上述实施例九-实施例十一3个实施例的光谱调光封装体采用COB封装形式的光谱图分别参见图26-28，其波段分布如下表8所示。
表8：实施例九-实施例十一对应的光谱波段分布数据表
波段/nm 实施例九(5000K) 实施例十(4000K) 实施例十一(3000K)
380-430 有/峰值412nm    
430-470   有/峰值450nm 有
470-520 有/峰值485nm 有/峰值492nm 有/峰值485nm
520-550     有
600-1000 有/峰值670nm 有/峰值668nm 有/峰值670nm
从上述表7、表8和光谱图26-28中可以得出：本申请所提供的光谱调光封装体的封装层内芯片清晰可辨，显色指数大幅提升，不仅满足植物照明需求，同时具有很高的显指，可用作植物工厂内的室内、外照明；但光通量有略微下降，此外，通过改变光源中红光芯片与蓝光芯片的比例来实现色温的改变，不仅仅避免常规结构下通过高精度天平精确地称量荧光粉，更重要的是其用粉量大幅降低。
请参阅图29，图29为本申请封装体另一实施方式的结构示意图。该封装体包括：支撑件1h、至少一颗第一芯片2h、至少一颗第二芯片3h和封装层5h。其中，支撑件1h可以为带有电路的基板、带有电路的支架或不带电路的粘性薄膜中的一种。第一芯片2h和第二芯片3h位于支撑件1h的一侧表面上，与上述几种实施例中不同之处在于，第二芯片3h的表面中至少顶面设置有蓝色荧光粉胶层4h；封装层5h覆盖支撑件1h设置有第一芯片2h和第二芯片3h一侧，第 一芯片2h、第二芯片3h和蓝色荧光粉胶层4h位于封装层5h内；且封装层5h由不含蓝色荧光粉的第一波长荧光粉胶层形成，第一波长荧光粉胶层内的荧光粉的峰值波长L 1大于蓝色荧光粉胶层4h中荧光粉的峰值波长L 蓝。
在本实施例中，第一芯片2h的峰值波长记作λA，λA＝445～550nm，第二芯片3h的峰值波长记作λB，λB＝390～430nm。封装层5h内的第一波长荧光粉胶层中的荧光粉为绿色荧光粉、黄色荧光粉、红色荧光粉的一种或者多种，且L 1＝505～900nm。蓝色荧光粉胶层4h内的荧光粉为蓝色或靛色荧光粉中的一种或多种，且L 蓝＝450～505nm。
此外，上述支撑件1h上的第一芯片2h和第二芯片3h，不局限于一颗，可以根据实际发光光谱需要，相应增加第一芯片2h和第二芯片3h的颗数。
上述封装体所形成的光源的具体激发方式如图30所示。下面以几个具体的实施例对上述所提供的封装体作进一步说明。以SMD封装以及COB封装的封装体为例，进行测试，且在第二芯片3h的顶面和侧面均设置有蓝色荧光粉胶层4h，第一芯片2h选用波长在445nm的LED芯片，第二芯片3h选用波长在430nm的LED芯片；蓝色荧光粉胶层4h中的荧光粉为蓝色荧光粉，其荧光粉波长为450nm，不含蓝色荧光粉的封装层5h中的荧光粉为黄色荧光粉和红色荧光粉混合荧光粉，其荧光粉波长为710nm。
采用SMD封装与市场销售的某型号样品测试数据平均值对比如下表9所示：
表9：两种样品参数测试平均值对照表
Figure PCTCN2019123375-appb-000010
结论：本实施例中样品的测试结果表明，在相同的光源面积，本实施例中 以SMD封装的光源光效更高。
采用COB封装与市场销售的某型号样品测试数据平均值对比如下表10所示：
表10：两种样品参数测试平均值对照表
Figure PCTCN2019123375-appb-000011
结论：本实施例中样品的测试结果表明，在相同的光源面积，本实施例中以COB封装的光源光效更高。
上述实施例所提供的封装体，采用多个不同波长的芯片激发可以兼顾到不同荧光粉的激发波长，即可以实现短波长芯片激发短波长荧光粉，长波长芯片激发长波长荧光粉，同时可以避免由于短波长荧光粉产生的短波长荧光再一次激发长波长荧光粉而被再吸收；最佳的激发波长，实现最高的量子效率，同时提高光源的光效。进一步，采用多个不同波长的芯片的封装结构，与常规技术的区别在于，其中的蓝色荧光粉采用CSP或WLP技术封装在芯片的顶面及侧面的局域范围内，只有极少的短波长和中波长荧光会照射到蓝色荧光粉上，可以有效避免蓝色荧光粉对红、绿荧光的二次吸收问题。此外，根据斯托克斯位移现象，对于同一种荧光粉，当激发光的波长移动时，其发光波长也会向对应的波长方向进行相对移动；因此本发明采用短波长芯片激发青、蓝、绿色荧光粉可以得到波长较短的青、蓝、绿荧光，使得荧光带谱变宽，从而进一步提高显色指数。另外，本实施例可通过改变光源中蓝红芯片的比例来改变色温。常规技术通过在整体荧光粉层内增加各种荧光粉的量来改变光源的色温，这样会导致COB封装的发光面颜色深且浑浊，而本发明是采用全蓝粉的CSP芯片实现，可通过改变光源中红光芯片与蓝光芯片的比例来实现色温的改变,而不像常规封装形式需要通过高精度天平精确地称量荧光粉，然后在整体封装层中改变蓝色 荧光粉的混合浓度来实现色温的改变。

Claims (26)

  1. 一种封装体，包括：
    支撑件；
    至少一颗第一芯片和至少一颗第二芯片，所述第一芯片和所述第二芯片位于所述支撑件的一侧表面上，且所述第二芯片的表面中至少顶面设置有长波长荧光粉胶层；
    封装层，覆盖所述支撑件设置有所述第一芯片和所述第二芯片一侧，所述第一芯片、所述第二芯片和所述长波长荧光粉胶层位于所述封装层内；且所述封装层由不含长波长荧光粉的第一波长荧光粉胶层形成，所述第一波长荧光粉胶层内的荧光粉的峰值波长L 1小于长波长荧光粉的峰值波长L 红。
  2. 根据权利要求1所述的封装体，其中，
    所述第一芯片的峰值波长记作λA，λA＝390～460nm，第二芯片的峰值波长记作λB，λB＝445～550nm；且0≤λB－λA≤160nm；和/或，
    所述第一波长荧光粉胶层中荧光粉为绿色荧光粉、靛色荧光粉、青色荧光粉、黄色荧光粉和蓝色荧光粉的一种或者多种，且L 1＝470～590nm。
  3. 根据权利要求1所述的封装体，其中，
    所述第一芯片的表面中至少顶面设置有不含红色荧光粉的第二波长荧光粉胶层，所述封装层进一步覆盖所述第二波长荧光粉胶层；且所述第二波长荧光粉胶层的荧光粉的峰值波长L 2小于所述第一波长荧光粉胶体层的荧光粉的峰值波长L 1。
  4. 根据权利要求3所述的封装体，其中：
    所述第一芯片的峰值波长记作λA，λA＝390～445nm，第二芯片的峰值波长记作λB，λB＝445～550nm；且5≤λB－λA≤160nm；和/或，
    所述第一波长荧光粉胶层中的荧光粉为绿色荧光粉、黄色荧光粉的任意一种或者两种的混合，且L 1＝510～590nm；所述第二波长荧光粉胶层中的荧光粉为绿色荧光粉、靛色荧光粉、青色荧光粉、黄色荧光粉和蓝色荧光粉的一种或者多种，且L 2＝470～590nm。
  5. 根据权利要求3所述的封装体，其特征在于，
    所述支撑件上与所述第一芯片同侧的表面还设置有至少一颗第三芯片，所述封装层进一步覆盖所述第三芯片，所述第一芯片的峰值波长记作λA，λA＝390～445nm，第三芯片的峰值波长记作λC，λC＝420～465nm，第二芯片的 峰值波长记作λB，λB＝445～550nm；且0≤λB－λC≤130nm，15≤λC－λA≤130nm。
  6. 根据权利要求5所述的封装体，其中，
    所述第一波长荧光粉胶层中的荧光粉为绿色荧光粉、黄色荧光粉中的任意一种或者两种的混合，且L 1＝510～590nm；所述第二波长荧光粉胶层中的荧光粉为靛色荧光粉、青色荧光粉和蓝色荧光粉的一种或者多种，且L 2＝470～510nm。
  7. 根据权利要求5所述的封装体，其中，
    所述第三芯片的表面中至少顶面设置有不含红色荧光粉的第三波长荧光粉胶层，所述封装层进一步覆盖所述第三波长荧光粉胶层；且所述第三波长荧光粉胶层的荧光粉的峰值波长L 3大于所述第二波长荧光粉胶层内的荧光粉的峰值波长L 2，且小于所述第一波长荧光粉胶层内的荧光粉的峰值波长L 1。
  8. 根据权利要求7所述的封装体，其中，
    所述支撑件上与所述第一芯片同侧的表面还设置有至少一颗第四芯片，所述第四芯片的峰值波长记作λD，λD＝420～465nm，所述封装层进一步覆盖所述第四芯片。
  9. 根据权利要求7所述的封装体，其中，
    所述第一波长荧光粉胶层中的荧光粉为绿色荧光粉、黄色荧光粉中的任意一种或者两种的混合，且L 1＝530～590nm；所述第二波长荧光粉胶层中的荧光粉为靛色荧光粉、青色荧光粉和蓝色荧光粉的一种或者多种，且L 2＝470～510nm；所述第三波长荧光粉胶层中的荧光粉为绿色荧光粉，且L 3＝510～540nm。
  10. 根据权利要求9所述的封装体，其中，
    所述第一芯片选用峰值波长在390～430nm的紫光LED芯片，所述第二波长荧光粉胶层中的荧光粉为蓝色荧光粉。
  11. 根据权利要求1所述的封装体，其中，
    所述第一芯片的峰值波长记作λA，λA＝420～465nm，所述第二芯片的峰值波长记作λB，λB＝445～550nm；且0≤λB－λA≤130nm。
  12. 根据权利要求11所述的封装体，其中，
    所述长波长荧光粉胶层由胶体与发射波长为600-1000nm的长波长荧光粉混合而成；且所述长波长荧光粉胶层中长波长荧光粉与胶体的粉胶重量比为0.2～5：1；和/或，
    所述第一波长荧光粉胶层内含有发射波长为500-550nm的绿色荧光粉和发 射波长为550-600nm的黄色荧光粉中的任意一种或两种，且不含有发射波长为450-500nm的蓝色荧光粉与发射波长为600-1000nm的长波长荧光粉。
  13. 根据权利要求12所述的封装体，其中，
    当所述封装体整体要求的色温高于4500K时，所述第二芯片的数量占所述第一芯片和所述第二芯片数量总和的5～30％；
    当所述封装体整体要求的色温低于或等于4500K时，所述第二芯片的数量占所述第一芯片和所述第二芯片数量总和的30～80％。
  14. 根据权利要求12所述封装体，其中，
    所述长波长荧光粉胶层设置在所述第二芯片的顶面与侧面上形成CSP封装结构，或设置在所述第二芯片的顶面形成WLP封装结构，所述长波长荧光粉胶层设置在第二芯片的顶面的厚度在20～400um，所述第二芯片的侧面的厚度在0～400um；
    所述发射波长为600-1000nm的长波长荧光粉采用红色荧光粉和近红外荧光粉中的任意一种或两者的混合。
  15. 根据权利要求14所述的封装体，其中，
    所述长波长荧光粉中含有波长在658～660nm的红色荧光粉，且所述波长在658～660nm的红色荧光粉重量占长波长荧光粉重量的一半以上；和/或，
    所述长波长荧光粉为波长在605～630nm的红色荧光粉，且不含有峰值超过630nm的荧光粉。
  16. 根据权利要求11所述的封装体，其中，
    所述支撑件上与所述第一芯片同侧的表面还设置有至少一颗第三芯片，所述第三芯片为紫光或近紫外芯片，所述第三芯片的峰值波长记作λC，λC＝370-420nm；所述第三芯片表面设置有短波长荧光粉胶层，所述短波长荧光粉胶层由胶体与发射波长为450-500nm的短波长荧光粉混合而成；
    其中，所述短波长荧光粉胶层中短波长荧光粉与胶体的粉胶重量比为0.2～5：1，和/或，所述第三芯片与所述第一芯片的数量比为1:1～5。
  17. 根据权利要求16所述的封装体，其中，
    所述短波长荧光粉胶层中短波长荧光粉与胶体的粉胶重量比大于2～5：1；且所述第三芯片与所述第一芯片的数量比为1:1～3。
  18. 根据权利要求11所述的封装体，其中，
    所述支撑件上与所述第一芯片同侧的表面还设置有至少一颗第三芯片和至 少一颗第四芯片；
    所述第三芯片为紫光芯片，其表面设置有短波长荧光粉胶层；所述第三芯片的峰值波长记作λC，λC＝400-420nm；
    所述第四芯片为近紫外芯片或在近紫外芯片，所述第四芯片的峰值波长记作λD，λD＝370-400nm，其表面可以设置或者不设置短波长荧光粉胶层；
    所述第三芯片和所述第四芯片上设置的短波长荧光粉胶层由胶体与发射波长为450-500nm的蓝色荧光粉混合而成；其中，且所述短波长荧光粉胶层中蓝色荧光粉与胶体的粉胶重量比为0.2～5：1；和/或，所述第二芯片占所述第一芯片、所述第二芯片、所述第三芯片、所述第四芯片数量总和的50～75％；和/或，所述第三芯片和第四芯片之间的数量比例为1:1～3；和/或，所述第一芯片的数量与第三芯片、第四芯片两者的总数量之间的比例为2:0.5～2；
  19. 根据权利要求16或18所述的封装体，其中，
    所述短波长荧光粉胶层同时设置在对应的芯片顶面与侧面上形成CSP封装结构或者设置在对应的芯片的顶面形成WLP封装结构，所述短波长荧光粉胶层设置在对应的芯片的顶面的厚度在20～400um，在对应的芯片的侧面的厚度在0～400um。
  20. 根据权利要求1所述的封装体，其中，
    所述支撑件为带有电路的基板、带有电路的支架或不带电路的粘性薄膜中的任意一种。
  21. 一种封装体的制备方法，其中，所述制备方法包括：
    步骤S1：提供至少一颗第一芯片和至少一颗第二芯片，且所述第二芯片的表面中的至少顶面设置有长波长荧光粉胶层；
    步骤S2：根据最终封装体的色温要求，设定所述第二芯片占总芯片数量的比例，对照选择数量比例后第二芯片在CIE色度图上对应的色点坐标，记作红点(X1；Y1)；对照选择数量比例后第一芯片在CIE色度图上对应的色点坐标，记作蓝点(X2；Y2)；
    步骤S3：色温的预控制：将所述第一芯片、所述第二芯片分别固晶到支撑件上对应的位置；并点亮，得到点亮后封装体对应在CIE色度图上的色点位置，记作混合点(X3；Y3)，且确保0.08≤Y3≤0.30，0.22≤X3≤0.43；从而对色温范围进行预控制；若不在该范围内则重新进行步骤S2；
    步骤S4：再根据最终封装体色温要求，查找该最终色温在CIE色度图普朗 克轨迹上对应的色点坐标，记作白点(X4；Y4)；通过已知的红点(X1；Y1)、蓝点(X2；Y2)、混合点(X3；Y3)、白点(X4；Y4)来得到所需绿点(X5；Y5)具体的坐标值或坐标范围；再根据该坐标值或坐标范围选择合适配比的第一波长荧光粉，再混合到胶体内形成第一波长荧光粉胶层；利用所述第一波长荧光粉胶层将所述第一芯片、所述第二芯片整体封装在所述支撑件形成封装层；再升高温度进行固化，得到成品；
    步骤S5：检测成品的发光光谱和色温是否符合设计要求，若最终在CIE色度图上对应的色点相对普朗克轨迹偏差，则对应调整封装层中第一波长荧光粉的配比；若色温不符合要求，则直接调整所述第二芯片占芯片总和的占比再重复步骤S3～S5。
  22. 根据权利要求21所述的制备方法，其中，
    所述第一芯片的峰值波长记作λA，λA＝420～465nm，所述第二芯片的峰值波长记作λB，λB＝445～550nm；且0≤λB－λA≤130nm；
    其中，所述步骤S3中包括：确保0.08≤Y3≤0.20，0.22≤X3≤0.43；或，
    所述步骤S4中选择合适配比的第一波长荧光粉包括：选择合适配比的发射波长为500-550nm的绿色荧光粉和发射波长为550-600nm的黄色荧光粉；
    所述步骤S5中若最终在CIE色度图上对应的色点相对普朗克轨迹偏差，则对应调整封装层中第一波长荧光粉的配比，包括：若最终在CIE色度图上对应的色点相对普朗克轨迹偏上或偏下，那么分别相应降低或增加外部胶体中的绿色荧光粉和黄色荧光粉的粉量。
  23. 根据权利要求21所述的制备方法，其中，
    所述第一芯片的峰值波长记作λA，λA＝420～465nm，所述第二芯片的峰值波长记作λB，λB＝445～550nm；所述步骤S1还包括：提供第三芯片，所述第三芯片为紫光或近紫外芯片，所述第三芯片的峰值波长记作λC，λC＝370-420nm，所述第三芯片表面设置有短波长荧光粉胶层；
    其中，所述步骤S3中包括：确保0.09≤Y3≤0.20，0.22≤X3≤0.37；
    所述步骤S5还包括：若发光光谱不符合要求，则直接调整第三芯片的数量后再重复步骤S3～S5。
  24. 根据权利要求21所述的制备方法，其中，
    所述第一芯片的峰值波长记作λA，λA＝420～465nm，所述第二芯片的峰值波长记作λB，λB＝445～550nm；所述步骤S1还包括：提供第三芯片和第四 芯片，所述第三芯片为紫光芯片表面设置短波长荧光粉胶层形成，所述第四芯片为近紫外芯片或在近紫外芯片表面设置或者不设置短波长荧光粉胶层形成；
    其中，所述步骤S3中包括：确保0.16≤Y3≤0.30，0.28≤X3≤0.42；
    所述步骤S5还包括：若发光光谱不符合要求，则根据铺对应的波段直接调整所述第一芯片、所述第三芯片和所述第四芯片的数量后再重复步骤S3～S5。
  25. 一种封装体，包括：
    支撑件；
    至少一颗第一芯片和至少一颗第二芯片，所述第一芯片和所述第二芯片位于所述支撑件的一侧表面上，且所述第二芯片的表面中至少顶面设置有蓝色荧光粉胶层；
    封装层，覆盖所述支撑件设置有所述第一芯片和所述第二芯片一侧，所述第一芯片、所述第二芯片和所述蓝色荧光粉胶层位于所述封装层内；且所述封装层由不含蓝色荧光粉的第一波长荧光粉胶层形成，所述第一波长荧光粉胶层内的荧光粉的峰值波长L 1大于所述蓝色荧光粉胶层中荧光粉的峰值波长L 蓝。
  26. 根据权利要求25所述的封装体，其中，
    所述第一芯片的峰值波长记作λA，λA＝445～550nm，所述第二芯片的峰值波长记作λB，λB＝390～430nm；
    所述第一波长荧光粉胶层中的荧光粉为绿色荧光粉、黄色荧光粉、红色荧光粉的一种或者多种，且L 1＝505～900nm；
    所述蓝色荧光粉胶层内的荧光粉为蓝色或靛色荧光粉中的一种或多种，且L 蓝＝450～505nm。
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