WO2020114196A1 - Mxene material, preparation method therefor and application thereof - Google Patents

Mxene material, preparation method therefor and application thereof Download PDF

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WO2020114196A1
WO2020114196A1 PCT/CN2019/116627 CN2019116627W WO2020114196A1 WO 2020114196 A1 WO2020114196 A1 WO 2020114196A1 CN 2019116627 W CN2019116627 W CN 2019116627W WO 2020114196 A1 WO2020114196 A1 WO 2020114196A1
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alc
mxene
transition metal
mxene material
combination
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黄庆
李勉
李友兵
覃桂芳
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中国科学院宁波材料技术与工程研究所
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Priority claimed from CN201811473651.7A external-priority patent/CN109437177B/en
Priority claimed from CN201910847191.8A external-priority patent/CN110540236A/en
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    • C01B32/00Carbon; Compounds thereof
    • C01B32/15Nano-sized carbon materials
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  • the embodiments of the present application also provide a method for preparing the foregoing MXene material, which includes:
  • FIG. 1 is an XRD spectrum of Ti 3 C 2 Cl 2 and its precursor MAX phase Ti 3 AlC 2 using Cl as a surface group in Example 1 of the present application.
  • Example 4 is a scanning electron micrograph of Ti 3 C 2 Cl 2 with Cl as a surface group in Example 2 of the present application.
  • Example 12 is a scanning electron micrograph of Ti 3 C 2 Cl 2 with Cl as the surface group in Example 6 of the present application.
  • Example 20 is a scanning electron micrograph of Ti 3 C 2 Br 2 with Br as a surface group in Example 16 of the present application.
  • An aspect of an embodiment of the present application provides an MXene material whose molecular formula is expressed as M n+1 X n Y 2 , where M is Sc, Ti, V, Cr, Zr, Nb, Mo, Hf, Ta, etc. Any one or a combination of two or more, X is any one or a combination of two elements C, N, Y is any one or a combination of two or more elements Cl, Br, I, n is 1, 2, 3 or 4.
  • the transition metal iodide includes any one or a combination of two or more of CuI 2 , NiI 2 , FeI 2 and ZnI 2 , but is not limited thereto.
  • the precursor MAX phase material is any one or a combination of two or more of powder, bulk, and thin film, but it is not limited thereto.
  • the MXene material with Cl as the surface group is Ti 3 C 2 Cl 2
  • the precursor MAX phase is Ti 3 AlC 2
  • the transition metal chloride is ZnCl 2.
  • Fig. 10 is a scanning electron microscope image of the product Ti 3 C 2 Cl 2 MXene in Step 4. It can be seen that it exhibits an obvious “accordion” morphology characteristic of the MXene material. This is due to the Al located between Ti 3 C 2 layers. The atoms are pulled away, and the newly embedded Cl atoms cause the bonding between the Ti 3 C 2 Cl 2 layers to weaken and the interlayer spacing to increase, thereby exhibiting a multilayer structure.
  • the MXene material with Cl as the surface group is Ti 3 C 2 Cl 2
  • the precursor MAX phase is Ti 3 SiC 2
  • the transition metal chloride is CuCl 2.
  • Fig. 12 is a scanning electron microscope image of the product Ti 3 C 2 Cl 2 MXene in Step 4. It can be seen that it exhibits an obvious “accordion” morphology structure unique to MXene material, which is due to the Si located between Ti 3 C 2 layers. The atoms are pulled away, and the newly embedded Cl atoms cause the bonding between the Ti 3 C 2 Cl 2 layers to weaken and the interlayer spacing to increase, thereby exhibiting a multilayer structure.
  • the precursor of FIG. 16 is that the MAX phase is Ti 3 AlC 2 , and the XRD patterns of the products obtained in Step 3 and Step 4 are compared. It can be seen from the comparison that after the reaction in step 3, the intensity of the diffraction peaks (104), (105), (110) and other products of the product is significantly weakened, indicating that the order of the product along the crystal plane decreases; (002), ( Diffraction peaks such as 004) and (006) shifted to a low angle, and the corresponding cell parameter c value increased to 23.96 nm, which was higher than the c value of Ti 3 AlC 2 18.48 nm.

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Abstract

Provided are an MXene material, a preparation method therefor and an application thereof. The molecular formula of the MXene material is expressed as M n+1X nY 2, wherein M is Sc, Ti, V, Cr, Zr, Nb, Mo, Hf, Ta, or other such elements, X is an element such as C and/or N, Y is Cl, Br, I, or other such elements, and n is 1, 2, 3 or 4. The preparation method comprises: mixing a precursor MAX phase material with a transition metal chloride, a transition metal bromide, or a transition metal iodide at a molar ratio of 1:3-1:10, putting the obtained mixture in an inert atmosphere for a high-temperature reaction at 400℃-800℃ for 1-48h, then performing post treatment to obtain the MXene material. The preparation method is simple and easy, and environment friendly, and the obtained MXene material has good application in fields such as electrode materials for electrochemical energy storage, super capacitor materials, electromagnetic absorption and shielding materials, and catalysts.

Description

一种MXene材料及其制备方法与应用MXene material and its preparation method and application 技术领域Technical field
本申请涉及二维晶体材料技术领域,具体涉及一种以Cl、Br、I等为表面基团的MXene材料及其制备方法与应用。The present application relates to the technical field of two-dimensional crystal materials, in particular to an MXene material with Cl, Br, I, etc. as a surface group, and a preparation method and application thereof.
背景技术Background technique
自石墨烯(graphene)2004年被发现以来,二维材料就因其高比表面积、高纵横比、具有独特的电子结构等性质而受到广泛的关注和研究。2011年,Naguib等人报道了一类名为MXene的新型二维材料。MXene材料是一类层状二维碳/氮化物,通常通过化学蚀刻法抽离其母相材料MAX相(M n+1AX n,n=1-3,M为过渡金属,A为IIIA或IVA族元素,X为C或N)中的A层原子层得到。MXene材料由于其丰富的成分结构可调控性、独特的层状结构、高导电率等特性,而在电化学储能用电极材料、超级电容材料、电磁吸收与屏蔽材料、催化剂等领域有较好的应用。由于丰富的元素组成,表面官能团可调性,各种磁性顺序和大的自旋轨道耦合,此外,还有高比表面积,亲水性,吸附性和高表面反应活性,MXenes在很多领域引起了广泛关注,例如催化,离子电池,气体储存媒介和传感器等。 Since the discovery of graphene in 2004, two-dimensional materials have received extensive attention and research due to their high specific surface area, high aspect ratio, and unique electronic structure. In 2011, Naguib and others reported a new type of two-dimensional material called MXene. MXene material is a type of layered two-dimensional carbon/nitride, which is usually extracted from its parent phase material MAX phase (M n+1 AX n , n=1-3, M is a transition metal, A is IIIA or IVA group elements, X is obtained from the atomic layer of layer A in C or N). MXene materials are better in the fields of electrode materials for electrochemical energy storage, supercapacitor materials, electromagnetic absorption and shielding materials, catalysts and other fields due to their rich composition structure controllability, unique layered structure, high conductivity and other characteristics Applications. Due to the rich elemental composition, tunability of surface functional groups, various magnetic sequences and large spin orbit coupling, in addition, there are high specific surface area, hydrophilicity, adsorption and high surface reactivity, MXenes has caused a lot of Widely concerned, such as catalysis, ion batteries, gas storage media and sensors.
一般来说,MXenes的制备都是通过HF酸溶液刻蚀MAX相实现。HF酸刻蚀掉MAX相的A层原子后,溶液中的-OH、-O和-F等基团会与成键不饱和的MX层单元结合,形成MXene。因此,该方法得到的MXene材料表面基团不可避免由-OH、-O、-F构成,且其成分比例难以控制。众多研究指出表面基团的变化,会引起MXene电子结构的变化,进而对其电学特性、磁学特性等带来深远的影响。理论预测表明表面基团全部由-O或者-Cl构成的MXene材料具有更好的化学稳定性和电子传输特性,其在储能等领域的应用性能要高于表面基团为-F的MXene材料。然而,截止目前为止,目前被合成出来的MXene材料如Ti 3C 2T x、Ti 2CT x、Zr 3C 2T x、Nb 2CT x、Ta 4C 3T x、V 2CT x、Ti 4N 3T x、Mo 2CT x、Hf 3C 2T x等,其表面基团大多由-OH、-O、-F构成,表面基团为其他类型(如-Cl、-Br或者-I)的MXene材料至今没有报道。MXene材料在电池电极领域具有广泛的应用,早期报道的以-F、-Cl、-O等为表面基团的MXene通常作为离子储存载体,其自身并不能提供电池充放电所必须的氧化还原反应。这主要是因为MXene表面的-F、-Cl、-O在充放电过程中一旦发生氧化,就会生成气态单质逸出,导致充放电反应不可逆。 In general, the preparation of MXenes is achieved by etching the MAX phase with HF acid solution. After the HF acid etched the A layer atoms of the MAX phase, the -OH, -O, and -F groups in the solution would combine with the unsaturated MX layer units to form MXene. Therefore, the surface group of the MXene material obtained by this method is inevitably composed of -OH, -O, and -F, and its component ratio is difficult to control. Many studies have pointed out that changes in the surface groups will cause changes in the electronic structure of MXene, which will have a profound impact on its electrical and magnetic properties. Theoretical predictions indicate that the MXene material whose surface groups are all composed of -O or -Cl has better chemical stability and electron transport characteristics, and its application performance in energy storage and other fields is higher than that of the MXene material whose surface group is -F . However, as of now, the currently synthesized MXene materials such as Ti 3 C 2 T x , Ti 2 CT x , Zr 3 C 2 T x , Nb 2 CT x , Ta 4 C 3 T x , V 2 CT x , Ti 4 N 3 T x , Mo 2 CT x , Hf 3 C 2 T x etc., the surface groups are mostly composed of -OH, -O, -F, and the surface groups are other types (such as -Cl, -Br or -I) The MXene material has not been reported so far. MXene material has a wide range of applications in the field of battery electrodes. The MXene reported earlier with -F, -Cl, -O, etc. as the surface group is usually used as an ion storage carrier, and it cannot provide the redox reaction necessary for battery charging and discharging. . This is mainly because -F, -Cl, and -O on the surface of MXene are oxidized during charge and discharge, and a gaseous single substance is generated to escape, resulting in an irreversible charge and discharge reaction.
传统HF刻蚀法带来的环境污染以及-F基团,极大的限制的MXene材料的应用前景。因此,开发新型制备方法,得到表面基团类型可控的MXene材料,有助于对MXene材料的众多功能特性进行调节,提升其在现有领域的应用,并有望拓展出新的应用领域。The environmental pollution and -F group brought by the traditional HF etching method greatly limit the application prospect of MXene materials. Therefore, developing new preparation methods to obtain MXene materials with controllable surface group types can help to adjust many functional characteristics of MXene materials, enhance their application in existing fields, and are expected to expand into new application fields.
发明内容Summary of the invention
本申请的主要目的在于提供一种MXene材料及其制备方法,从而克服现有技术的不足。The main purpose of the present application is to provide an MXene material and a preparation method thereof, thereby overcoming the deficiencies of the prior art.
本申请的另一主要目的在于提供所述MXene材料中的用途。Another main purpose of the present application is to provide the use in the MXene material.
为实现前述发明目的,本申请采用的技术方案包括:In order to achieve the aforementioned object of the invention, the technical solutions adopted in this application include:
本申请实施例提供了一种MXene材料,所述MXene材料的分子式表示为M n+1X nY 2,其中M为Sc、Ti、V、Cr、Zr、Nb、Mo、Hf、Ta元素中的任意一种或者两种以上的组合,X为C、N元素中的任意一种或两种的组合,Y为Cl、Br、I元素中的任意一种或者两种以上的组合,n为1、2、3或4。 An embodiment of the present application provides an MXene material, and the molecular formula of the MXene material is expressed as M n+1 X n Y 2 , where M is in the elements of Sc, Ti, V, Cr, Zr, Nb, Mo, Hf, and Ta Any one or a combination of two or more, X is any one or a combination of two elements C, N, Y is any one or a combination of two or more elements Cl, Br, I, n is 1, 2, 3 or 4.
本申请实施例还提供了一种前述MXene材料的制备方法,其包括:The embodiments of the present application also provide a method for preparing the foregoing MXene material, which includes:
将前驱体MAX相材料与过渡金属氯化物、过渡金属溴化物和过渡金属碘化物中的任意一种或两种以上的组合按1:3~1:10的摩尔比混合,并将所获混合物于惰性气氛中在400℃~800℃进行高温反应1~48h,之后进行后处理,获得所述MXene材料;The precursor MAX phase material is combined with any one or a combination of two or more of transition metal chloride, transition metal bromide and transition metal iodide in a molar ratio of 1:3 to 1:10, and the obtained mixture Performing a high-temperature reaction at 400°C to 800°C for 1 to 48 hours in an inert atmosphere, and then performing post-treatment to obtain the MXene material;
所述前驱体MAX相材料的分子式表示为M n+1AX n,其中M为Sc、Ti、V、Cr、Zr、Nb、Mo、Hf、Ta元素中的任意一种或者两种以上的组合,A选自ⅢA或ⅣA族元素,X为C、N元素中的任意一种或两种的组合,n为1、2、3或4。 The molecular formula of the precursor MAX phase material is expressed as M n+1 AX n , where M is any one or a combination of two or more elements of Sc, Ti, V, Cr, Zr, Nb, Mo, Hf, and Ta , A is selected from Group IIIA or IVA elements, X is any one or a combination of two elements of C and N, and n is 1, 2, 3 or 4.
本申请实施例还提供了前述的MXene材料在制备电化学储能用电极材料、超级电容材料、电磁吸收与屏蔽材料或者催化剂等领域中的用途。The embodiments of the present application also provide the use of the aforementioned MXene materials in the fields of preparing electrode materials for electrochemical energy storage, supercapacitor materials, electromagnetic absorption and shielding materials, or catalysts.
与现有技术相比,本申请的有益效果在于:Compared with the prior art, the beneficial effects of this application are:
1)本申请提供的以-Cl、-Br或-I为表面基团的MXene材料其化学稳定性和热稳定性优于传统F为表面基团的MXene,其电学性能、介电性能等具有更丰富的可调控空间,并且本申请所提供的制备方法简单易行,环境友好,避免了传统利用氢氟酸刻蚀法制备MXene材料的诸多缺陷,得到的-Cl、-Br或-I为表面基团的MXene材料在电化学储能用电极材料、超级电容材料、电磁吸收与屏蔽材料、催化剂等领域有较好的应用;1) The MXene material with -Cl, -Br or -I as the surface group provided in this application has better chemical and thermal stability than the traditional MXene with F as the surface group, and its electrical properties, dielectric properties, etc. have Richer controllable space, and the preparation method provided in this application is simple and easy to operate, and is environmentally friendly, avoiding many defects of the traditional preparation of MXene material by hydrofluoric acid etching. The obtained -Cl, -Br or -I is Surface group MXene materials have good applications in the fields of electrode materials for electrochemical energy storage, supercapacitor materials, electromagnetic absorption and shielding materials, catalysts, etc.;
2)与早期报道的以-F、-O等为表面基团的MXene相比,本申请得到的-Cl、-Br或-I表面基团能够在MXene层间发生可逆的氧化还原反应,在氧化还原反应过程中能够以液态或固态形式稳定存在于MXene层间,为电池充放电反应提供稳定的反应原料,该特点是-F、-O 等气体元素基团所不具备的,因此本申请得到的以-Cl、-Br或-I为表面基团的MXene材料能够独立作为大容量、高稳定性卤素电池电极材料在锂、钠、锌等离子电池领域获得应用。2) Compared with the earlier reported MXene with -F, -O, etc. as the surface group, the -Cl, -Br or -I surface group obtained in this application can undergo a reversible redox reaction between MXene layers. The redox reaction process can be stably present in the liquid or solid form between the MXene layers, providing a stable reaction raw material for the battery charge and discharge reaction. This feature is not available for gas element groups such as -F and -O, so this application The obtained MXene material with -Cl, -Br or -I as the surface group can be independently used as a large-capacity, high-stability halogen battery electrode material in the field of lithium, sodium, zinc and other ion batteries.
附图说明BRIEF DESCRIPTION
为了更清楚地说明本申请实施例或现有技术中的技术方案,下面将对实施例或现有技术描述中所需要使用的附图作简单地介绍,显而易见地,下面描述中的附图仅仅是本申请中记载的一些实施例,对于本领域普通技术人员来讲,在不付出创造性劳动的前提下,还可以根据这些附图获得其他的附图。In order to more clearly explain the embodiments of the present application or the technical solutions in the prior art, the following will briefly introduce the drawings required in the embodiments or the description of the prior art. Obviously, the drawings in the following description are only These are the embodiments described in this application. For those of ordinary skill in the art, without paying any creative work, other drawings can be obtained based on these drawings.
图1是本申请实施例1中以Cl为表面基团的Ti 3C 2Cl 2及其前驱体MAX相Ti 3AlC 2的XRD谱图。 FIG. 1 is an XRD spectrum of Ti 3 C 2 Cl 2 and its precursor MAX phase Ti 3 AlC 2 using Cl as a surface group in Example 1 of the present application.
图2a是本申请实施例1中以Cl为表面基团的Ti 3C 2Cl 2的扫描电镜图。 FIG. 2a is a scanning electron microscope image of Ti 3 C 2 Cl 2 with Cl as a surface group in Example 1 of the present application.
图2b是本申请实施例1中以Cl为表面基团的Ti 3C 2Cl 2的能谱分析图。 2b is an energy spectrum analysis diagram of Ti 3 C 2 Cl 2 with Cl as a surface group in Example 1 of the present application.
图3是本申请实施例1中以Cl为表面基团的Ti 3C 2Cl 2的高分辨透射电镜图。 FIG. 3 is a high-resolution transmission electron micrograph of Ti 3 C 2 Cl 2 with Cl as a surface group in Example 1 of the present application.
图4是本申请实施例2中以Cl为表面基团的Ti 3C 2Cl 2的扫描电镜图。 4 is a scanning electron micrograph of Ti 3 C 2 Cl 2 with Cl as a surface group in Example 2 of the present application.
图5是本申请实施例3中以Cl为表面基团的Ti 3C 2Cl 2的扫描电镜图。 5 is a scanning electron micrograph of Ti 3 C 2 Cl 2 with Cl as a surface group in Example 3 of the present application.
图6是本申请实施例4中以Cl为表面基团的Ti 2CCl 2及其前驱体MAX相Ti 3AlC 2的XRD谱图。 6 is an XRD spectrum of Ti 2 CCl 2 and its precursor MAX phase Ti 3 AlC 2 using Cl as a surface group in Example 4 of the present application.
图7a是本申请实施例4中以Cl为表面基团的Ti 2CCl 2的扫描电镜图。 7a is a scanning electron micrograph of Ti 2 CCl 2 with Cl as a surface group in Example 4 of the present application.
图7b是本申请实施例4中以Cl为表面基团的Ti 2CCl 2的能谱分析图。 7b is an energy spectrum analysis diagram of Ti 2 CCl 2 with Cl as a surface group in Example 4 of the present application.
图8是本申请实施例4中以Cl为表面基团的Ti 2CCl 2的高分辨透射电镜图。 FIG. 8 is a high-resolution transmission electron micrograph of Ti 2 CCl 2 with Cl as a surface group in Example 4 of the present application.
图9是本申请实施例5中以Cl为表面基团的Ti 3C 2Cl 2及其前驱体MAX相Ti 3AlC 2的XRD谱图。 9 is an XRD spectrum of Ti 3 C 2 Cl 2 and its precursor MAX phase Ti 3 AlC 2 using Cl as a surface group in Example 5 of the present application.
图10是本申请实施例5中以Cl为表面基团的Ti 3C 2Cl 2的扫描电镜图。 10 is a scanning electron micrograph of Ti 3 C 2 Cl 2 with Cl as a surface group in Example 5 of the present application.
图11是本申请实施例6中以Cl为表面基团的Ti 3C 2Cl 2及其前驱体MAX相Ti 3SiC 2的XRD谱图。 11 is an XRD spectrum of Ti 3 C 2 Cl 2 and its precursor MAX phase Ti 3 SiC 2 using Cl as a surface group in Example 6 of the present application.
图12是本申请实施例6中以Cl为表面基团的Ti 3C 2Cl 2的扫描电镜图。 12 is a scanning electron micrograph of Ti 3 C 2 Cl 2 with Cl as the surface group in Example 6 of the present application.
图13是本申请实施例7中以Cl为表面基团的V 2CCl 2及其前驱体MAX相V 2AlC的XRD谱图。 13 is an XRD spectrum of V 2 CCl 2 and its precursor MAX phase V 2 AlC using Cl as a surface group in Example 7 of the present application.
图14是本申请实施例7中以Cl为表面基团的V 2CCl 2的扫描电镜图。 14 is a scanning electron micrograph of V 2 CCl 2 with Cl as a surface group in Example 7 of the present application.
图15a是本申请实施例8中以Br为表面基团的Ti 3C 2Br 2的扫描电镜图。 15a is a scanning electron micrograph of Ti 3 C 2 Br 2 with Br as a surface group in Example 8 of the present application.
图15b是本申请实施例8中以Br为表面基团的Ti 3C 2Br 2的能谱分析图。 15b is an energy spectrum analysis diagram of Ti 3 C 2 Br 2 with Br as a surface group in Example 8 of the present application.
图16是本申请实施例9中以Br为表面基团的Ti 3C 2Br 2及其前驱体MAX相Ti 3AlC 2的XRD谱图。 16 is an XRD spectrum of Ti 3 C 2 Br 2 and its precursor MAX phase Ti 3 AlC 2 with Br as a surface group in Example 9 of the present application.
图17是本申请实施例9中以Br为表面基团的Ti 3C 2Br 2的扫描电镜图。 17 is a scanning electron micrograph of Ti 3 C 2 Br 2 with Br as a surface group in Example 9 of the present application.
图18是本申请实施例10中以I为表面基团的Ti 3C 2I 2及其前驱体MAX相Ti 3AlC 2的XRD谱图。 18 is an XRD spectrum of Ti 3 C 2 I 2 and its precursor MAX phase Ti 3 AlC 2 with I as a surface group in Example 10 of the present application.
图19a是本申请实施例10中以I为表面基团的Ti 3C 2I 2的扫描电镜图。 FIG. 19a is a scanning electron microscope image of Ti 3 C 2 I 2 with I as the surface group in Example 10 of the present application.
图19b是本申请实施例10中以I为表面基团的Ti 3C 2I 2的能谱分析图。 FIG. 19b is an energy spectrum analysis diagram of Ti 3 C 2 I 2 with I as a surface group in Example 10 of the present application.
图20是本申请实施例16中以Br为表面基团的Ti 3C 2Br 2的扫描电镜图。 20 is a scanning electron micrograph of Ti 3 C 2 Br 2 with Br as a surface group in Example 16 of the present application.
具体实施方式detailed description
鉴于现有技术存在的技术问题,本案发明人经长期研究和大量实践,非常意外的提出本申请的技术方案。如下将对该技术方案、其实施过程及原理等作进一步的解释说明。In view of the technical problems existing in the prior art, the inventor of this case, after long-term research and extensive practice, very unexpectedly proposed the technical solution of the present application. The technical solution, its implementation process and principle will be further explained as follows.
本申请实施例的一个方面提供的一种MXene材料,其分子式表示为M n+1X nY 2,其中M为Sc、Ti、V、Cr、Zr、Nb、Mo、Hf、Ta元素等中的任意一种或者两种以上的组合,X为C、N元素中的任意一种或两种的组合,Y为Cl、Br、I元素中的任意一种或者两种以上的组合,n为1、2、3或4。 An aspect of an embodiment of the present application provides an MXene material whose molecular formula is expressed as M n+1 X n Y 2 , where M is Sc, Ti, V, Cr, Zr, Nb, Mo, Hf, Ta, etc. Any one or a combination of two or more, X is any one or a combination of two elements C, N, Y is any one or a combination of two or more elements Cl, Br, I, n is 1, 2, 3 or 4.
在一些实施例中,所述的X可以优选为C xN y,其中x+y=1。 In some embodiments, X may be preferably C x N y , where x+y=1.
在一些实施例中,所述MXene材料的晶体结构由M n+1X n单元以及位于所述M n+1X n单元表面的Y原子构成,其中Y原子与M原子成键结合。 In some embodiments, the crystal structure of the MXene material is composed of M n+1 X n units and Y atoms located on the surface of the M n+1 X n units, wherein the Y atoms are bonded to the M atoms.
在一些更具体的实施例中,所述MXene材料的晶体结构由M n+1X n单元以及位于所述M n+1X n单元表面的Cl、Br或I原子构成,其中Cl、Br或I原子与M原子成键结合。 In some more specific embodiments, the crystal structure of the MXene material is composed of M n+1 X n units and Cl, Br, or I atoms located on the surface of the M n+1 X n units, where Cl, Br, or I atom and M atom are bonded together.
在一些实施例中,所述MXene材料的形态为具有片层结构的粉体,所述片层结构由单层或多层M n+1X nY 2(如M n+1X nCl 2、M n+1X nBr 2或M n+1X nI 2等)构成。 In some embodiments, the form of the MXene material is a powder with a lamellar structure, the lamellar structure is composed of a single layer or multiple layers M n+1 X n Y 2 (eg, M n+1 X n Cl 2 , M n+1 X n Br 2 or M n+1 X n I 2 etc.).
进一步地,所述片层结构的横向尺寸为5nm~50μm,单片厚度为0.5~20nm。Further, the lateral dimension of the sheet structure is 5 nm to 50 μm, and the thickness of the single sheet is 0.5 to 20 nm.
本申请实施例的另一个方面还提供了一种MXene材料的制备方法,其包括:Another aspect of the embodiments of the present application further provides a method for preparing MXene material, including:
将前驱体MAX相材料与过渡金属氯化物、过渡金属溴化物和过渡金属碘化物中的任意一种或两种以上的组合按1:3~1:10的摩尔比混合,并将所获混合物于惰性气氛中在400℃~800℃进行高温反应1~48h,之后进行后处理,获得所述MXene材料;The precursor MAX phase material is combined with any one or a combination of two or more of transition metal chloride, transition metal bromide and transition metal iodide in a molar ratio of 1:3 to 1:10, and the obtained mixture Performing a high-temperature reaction at 400°C to 800°C for 1 to 48 hours in an inert atmosphere, and then performing post-treatment to obtain the MXene material;
所述前驱体MAX相材料的分子式表示为M n+1AX n,其中M为Sc、Ti、V、Cr、Zr、Nb、 Mo、Hf、Ta元素中的任意一种或者两种以上的组合,A选自ⅢA或ⅣA族元素,X为C、N元素中的任意一种或两种的组合,n为1、2、3或4。 The molecular formula of the precursor MAX phase material is expressed as M n+1 AX n , where M is any one or a combination of two or more elements of Sc, Ti, V, Cr, Zr, Nb, Mo, Hf, and Ta , A is selected from Group IIIA or IVA elements, X is any one or a combination of two elements of C and N, and n is 1, 2, 3 or 4.
在一些实施例中,所述前驱体MAX相材料包括Ti 3AlC 2、Ti 3SiC 2、Ti 2AlC、Ti 2AlN、Ti 4AlN 3、Ti 2GaC、V 2AlC、V 2GaC、Cr 2GaN、Cr 2AlC、Sc 2AlC、Zr 2AlC、Zr 2SnC、Nb 2AlC、Nb 4AlC 3、Mo 2AlC、Mo 2GaN、Hf 2AlC、Hf 2AlN、Ta 3AlC 2、Ta 4AlC 3等中的任意一种或两种以上的组合,但不限于此。 In some embodiments, the precursor MAX phase materials include Ti 3 AlC 2 , Ti 3 SiC 2 , Ti 2 AlC, Ti 2 AlN, Ti 4 AlN 3 , Ti 2 GaC, V 2 AlC, V 2 GaC, Cr 2 GaN, Cr 2 AlC, Sc 2 AlC, Zr 2 AlC, Zr 2 SnC, Nb 2 AlC, Nb 4 AlC 3 , Mo 2 AlC, Mo 2 GaN, Hf 2 AlC, Hf 2 AlN, Ta 3 AlC 2 , Ta 4 Any one or a combination of two or more of AlC 3, etc., but not limited to this.
进一步地,所述过渡金属氯化物包括ZnCl 2、CuCl 2、CoCl 2、FeCl 2、NiCl 2等中的任意一种或两种以上的组合,但不限于此。 Further, the transition metal chloride includes any one or a combination of two or more of ZnCl 2 , CuCl 2 , CoCl 2 , FeCl 2 , NiCl 2 and the like, but is not limited thereto.
进一步地,所述过渡金属溴化物包括CuBr 2、NiBr 2、FeBr 2和ZnBr 2等中的任意一种或两种以上的组合,但不限于此。 Further, the transition metal bromide includes any one or a combination of two or more of CuBr 2 , NiBr 2 , FeBr 2 and ZnBr 2 , but is not limited thereto.
进一步地,所述过渡金属碘化物包括CuI 2、NiI 2、FeI 2和ZnI 2等中的任意一种或两种以上的组合,但不限于此。 Further, the transition metal iodide includes any one or a combination of two or more of CuI 2 , NiI 2 , FeI 2 and ZnI 2 , but is not limited thereto.
进一步地,所述前驱体MAX相材料为粉体、块体、薄膜中的任意一种或两种以上的组合,但不限于此。Further, the precursor MAX phase material is any one or a combination of two or more of powder, bulk, and thin film, but it is not limited thereto.
进一步地,所述过渡金属氯化物、过渡金属溴化物或过渡金属碘化物为粉体,且粒度为500nm~1μm。Further, the transition metal chloride, transition metal bromide or transition metal iodide is powder, and the particle size is 500 nm to 1 μm.
进一步地,所述的后处理包括:在所述的高温反应结束后,用酸溶液除去反应生成的过渡金属单质,并以去离子水对所获的反应产物进行清洗,之后于40~60℃干燥,获得所述MXene材料。Further, the post-treatment includes: after the high-temperature reaction is completed, the elemental transition metal produced by the reaction is removed with an acid solution, and the obtained reaction product is washed with deionized water, and then at 40-60°C Dry to obtain the MXene material.
本申请实施例的另一个方面还提供了前述以-Cl、-Br或-I为表面基团的MXene材料在制备电化学储能用电极材料、超级电容材料、电磁吸收与屏蔽材料或者催化剂等领域中有较好的用途。Another aspect of the embodiments of the present application also provides the aforementioned MXene material with -Cl, -Br or -I as a surface group in the preparation of electrode materials for electrochemical energy storage, supercapacitor materials, electromagnetic absorption and shielding materials or catalysts, etc. There are better uses in the field.
综上所述,本申请提供的以-Cl、-Br或-I为表面基团的MXene材料其化学稳定性和热稳定性优于传统F为表面基团的MXene,其电学性能、介电性能等具有更丰富的可调控空间,并且本申请所提供的制备方法简单易行,环境友好,避免了传统利用氢氟酸刻蚀法制备MXene材料的诸多缺陷,得到的-Cl、-Br或-I为表面基团的MXene材料在电化学储能用电极材料、超级电容材料、电磁吸收与屏蔽材料、催化剂等领域有较好的应用。In summary, the chemical stability and thermal stability of the MXene material with -Cl, -Br or -I as the surface group provided in this application is better than that of the traditional MXene with surface group F, and its electrical properties and dielectric properties The performance and other have more adjustable space, and the preparation method provided in this application is simple and easy to operate, and is environmentally friendly, avoiding many defects of the traditional preparation of MXene material by hydrofluoric acid etching. The obtained -Cl, -Br or The MXene material with I as the surface group has good applications in the fields of electrode materials for electrochemical energy storage, supercapacitor materials, electromagnetic absorption and shielding materials, catalysts, etc.
与早期报道的以-F、-O等为表面基团的MXene相比,本申请得到的-Cl、-Br或-I表面基团能够在MXene层间发生可逆的氧化还原反应,在氧化还原反应过程中能够以液态或固态形式稳定存在于MXene层间,为电池充放电反应提供稳定的反应原料,该特点是-F、-O等气 体元素基团所不具备的,因此本申请得到的以-Cl、-Br或-I为表面基团的MXene材料能够独立作为大容量、高稳定性卤素电池电极材料在锂、钠、锌等离子电池领域获得应用。Compared with the earlier reported MXene with -F, -O, etc. as the surface group, the -Cl, -Br or -I surface group obtained in this application can undergo a reversible redox reaction between the MXene layers. It can be stably present in the liquid or solid form between the MXene layers during the reaction process, providing stable reaction raw materials for battery charge and discharge reactions. This feature is not available for gas element groups such as -F and -O. The MXene material with -Cl, -Br or -I as the surface group can be independently used as a large-capacity, high-stability halogen battery electrode material in the field of lithium, sodium, zinc and other ion batteries.
为了使本申请的目的、技术方案及优点更加清楚明白,以下结合附图及若干较佳实施例,对本申请的技术方案进行进一步详细的解释说明。应当理解,此处所描述的具体实施例仅用以解释本申请,并不用于限定本申请。此外,下面所描述的本申请各个实施方式中所涉及到的技术特征只要彼此之间未构成冲突就可以相互组合。In order to make the purpose, technical solutions and advantages of the present application clearer, the technical solutions of the present application will be further explained in detail in conjunction with the accompanying drawings and several preferred embodiments. It should be understood that the specific embodiments described herein are only used to explain the present application, and are not used to limit the present application. In addition, the technical features involved in the various embodiments of the present application described below can be combined with each other as long as there is no conflict with each other.
实施例1Example 1
本实施例中,以Cl为表面基团的MXene材料为Ti 3C 2Cl 2,前驱体MAX相为Ti 3AlC 2,过渡金属氯化物为ZnCl 2,这些原料均可以通过市售等途径获取。该Ti 3C 2Cl 2的制备方法如下: In this example, the MXene material with Cl as the surface group is Ti 3 C 2 Cl 2 , the precursor MAX phase is Ti 3 AlC 2 , and the transition metal chloride is ZnCl 2. These raw materials can be obtained through commercial sales and other methods. . The preparation method of the Ti 3 C 2 Cl 2 is as follows:
(1)称取粒度为500nm的ZnCl 20.15mol,粒度10μm的Ti 3AlC 2粉0.05mol,将上述材料研磨混合,得到混合产物。 (1) Weigh 0.15 mol of ZnCl 2 with a particle size of 500 nm and 0.05 mol of Ti 3 AlC 2 powder with a particle size of 10 μm, and grind and mix the above materials to obtain a mixed product.
(2)将混合物置于刚玉坩埚内,放入高温管式炉内进行反应。反应条件为:400℃,48小时,氩气保护。待管式炉温度降到室温后,取出坩埚内反应产物。(2) Place the mixture in a corundum crucible and place it in a high-temperature tube furnace for reaction. The reaction conditions are: 400°C, 48 hours, protected by argon. After the tube furnace temperature was lowered to room temperature, the reaction product in the crucible was taken out.
(3)用去离子水洗涤反应产物:将反应产物放入烧杯中,加入去离子水,搅拌并超声清洗30分钟后静置1小时,倒掉上清液。洗涤反应产物三次后,将其放入40℃的烘箱内,24小时后取出,得到固体产物。(3) Wash the reaction product with deionized water: put the reaction product in a beaker, add deionized water, stir and ultrasonically clean for 30 minutes, then stand for 1 hour, and pour off the supernatant. After washing the reaction product three times, it was placed in an oven at 40°C and taken out after 24 hours to obtain a solid product.
(4)将以上固体产物置于20mL质量分数为10%的稀盐酸中,浸泡2h,除去其中的Zn单质,得到Ti 3C 2Cl 2(4) Place the above solid product in 20 mL of dilute hydrochloric acid with a mass fraction of 10%, soak for 2 hours, and remove the Zn elemental substance therein to obtain Ti 3 C 2 Cl 2 .
图1前驱体是MAX相为Ti 3AlC 2,与步骤3和步骤4所得产物的XRD图谱对比。通过对比可以看出:经过步骤3反应后,产物的(104)、(105)、(110)等衍射峰强度明显减弱,说明产物在沿该晶面的有序程度下降;(002)、(004)、(006)等衍射峰明显向低角度偏移,其对应的晶胞参数c值增加至22.10nm,高于Ti 3AlC 2的c值18.48nm。以上XRD图谱变化与利用HF刻蚀Ti 3AlC 2制备Ti 3C 2MXene的变化过程是一致的,说明位于Ti 3AlC 2层间的Al原子被抽离,且有新的原子嵌入。此外,产物中检测到了明显的Zn单质的衍射峰,这是因为ZnCl 2与Ti 3AlC 2中的Al原子发生化学反应导致,用盐酸浸泡后,Zn单质的衍射峰消失,得到高纯的Ti 3C 2Cl 2MXene。 The precursor of FIG. 1 is that the MAX phase is Ti 3 AlC 2 , and the XRD patterns of the products obtained in Step 3 and Step 4 are compared. It can be seen from the comparison that after the reaction in step 3, the intensity of the diffraction peaks (104), (105), (110) and other products of the product is significantly weakened, indicating that the order of the product along the crystal plane decreases; (002), ( Diffraction peaks such as 004) and (006) shifted obviously to low angles, and the corresponding cell parameter c value increased to 22.10 nm, which was higher than the c value of Ti 3 AlC 2 18.48 nm. The changes in the XRD pattern above are consistent with the changes in the preparation of Ti 3 C 2 MXene using HF etching of Ti 3 AlC 2 , indicating that the Al atoms located between the Ti 3 AlC 2 layers are extracted and new atoms are embedded. In addition, a significant diffraction peak of elemental Zn was detected in the product, which was caused by a chemical reaction between ZnCl 2 and Al atoms in Ti 3 AlC 2. After immersion in hydrochloric acid, the diffraction peak of elemental Zn disappeared, resulting in high purity Ti 3 C 2 Cl 2 MXene.
图2a是步骤4产物Ti 3C 2Cl 2MXene的扫描电镜图片,可以看出其表现出明显的MXene材料所特有的“手风琴”形貌结构,这是因为位于Ti 3C 2层间的Al原子被抽离,新嵌入的Cl原子引起Ti 3C 2Cl 2层之间的结合减弱,层间距增大,从而表现出多层结构。图2b是对图2a的能谱分析,可以看出其主要元素构成为Ti:C:Cl=36.3:27.8:24.1,接近3:2:2的比例,此 外产物中有少量的O元素,这是产物洗涤过程中引入的。 Figure 2a is a scanning electron microscope image of the product Ti 3 C 2 Cl 2 MXene in Step 4. It can be seen that it exhibits a distinct “accordion” morphology characteristic of the MXene material because of the Al located between the Ti 3 C 2 layers The atoms are pulled away, and the newly embedded Cl atoms cause the bonding between the Ti 3 C 2 Cl 2 layers to weaken and the interlayer spacing to increase, thereby exhibiting a multilayer structure. Figure 2b is the energy spectrum analysis of Figure 2a. It can be seen that the main element composition is Ti:C:Cl=36.3:27.8:24.1, which is close to the ratio of 3:2:2. In addition, there is a small amount of O element in the product. It was introduced during product washing.
图3是通过高分辨透射电子显微镜对步骤4产物Ti 3C 2Cl 2的原子排列进行了确认,通过该图可以清晰的看出与Ti 3C 2层结合的Cl原子,有力的确认了产物是Ti 3C 2Cl 2Fig. 3 confirms the atomic arrangement of the Ti 3 C 2 Cl 2 product in Step 4 by high-resolution transmission electron microscopy. From this figure, it can be clearly seen that the Cl atoms bound to the Ti 3 C 2 layer strongly confirm the product It is Ti 3 C 2 Cl 2 .
实施例2Example 2
本实施例中,以Cl为表面基团的MXene材料为Ti 3C 2Cl 2,前驱体MAX相为Ti 3AlC 2,过渡金属氯化物为ZnCl 2,这些原料均可以通过市售等途径获取。该Ti 3C 2Cl 2的制备方法如下: In this example, the MXene material with Cl as the surface group is Ti 3 C 2 Cl 2 , the precursor MAX phase is Ti 3 AlC 2 , and the transition metal chloride is ZnCl 2. These raw materials can be obtained through commercial sales and other methods. . The preparation method of the Ti 3 C 2 Cl 2 is as follows:
(1)称取粒度为800nm的ZnCl 20.3mol,粒度10μm的Ti 3AlC 2粉0.05mol,将上述材料研磨混合,得到混合产物。 (1) Weigh 0.3 mol of ZnCl 2 with a particle size of 800 nm and 0.05 mol of Ti 3 AlC 2 powder with a particle size of 10 μm, and grind and mix the above materials to obtain a mixed product.
(2)将混合物置于刚玉坩埚内,放入高温管式炉内进行反应。反应条件为:600℃,24小时,氩气保护。待管式炉温度降到室温后,取出坩埚内反应产物。(2) Place the mixture in a corundum crucible and place it in a high-temperature tube furnace for reaction. The reaction conditions are: 600°C, 24 hours, argon protection. After the tube furnace temperature was lowered to room temperature, the reaction product in the crucible was taken out.
(3)用去离子水洗涤反应产物:将反应产物放入烧杯中,加入去离子水,搅拌并超声清洗30分钟后静置1小时,倒掉上清液。洗涤反应产物三次后,将其放入40℃的烘箱内,24小时后取出,得到固体产物。(3) Wash the reaction product with deionized water: put the reaction product in a beaker, add deionized water, stir and ultrasonically clean for 30 minutes, then stand for 1 hour, and pour off the supernatant. After washing the reaction product three times, it was placed in an oven at 40°C and taken out after 24 hours to obtain a solid product.
(4)将以上固体产物置于20mL质量分数为10%的稀盐酸中,浸泡2h,除去其中的Zn单质,得到Ti 3C 2Cl 2(4) Place the above solid product in 20 mL of dilute hydrochloric acid with a mass fraction of 10%, soak for 2 hours, and remove the Zn elemental substance therein to obtain Ti 3 C 2 Cl 2 .
图4是步骤4产物Ti 3C 2Cl 2MXene的扫描电镜图片,可以看出其表现出明显的MXene材料所特有的“手风琴”形貌结构,这是因为位于Ti 3C 2层间的Al原子被抽离,新嵌入的Cl原子引起Ti 3C 2Cl 2层之间的结合减弱,层间距增大,从而表现出多层结构。 Fig. 4 is a scanning electron microscope image of the product Ti 3 C 2 Cl 2 MXene in Step 4. It can be seen that it shows a distinct “accordion” morphology characteristic of the MXene material because of the Al located between Ti 3 C 2 layers The atoms are pulled away, and the newly embedded Cl atoms cause the bonding between the Ti 3 C 2 Cl 2 layers to weaken and the interlayer spacing to increase, thereby exhibiting a multilayer structure.
实施例3Example 3
本实施例中,以Cl为表面基团的MXene材料为Ti 3C 2Cl 2,前驱体MAX相为Ti 3AlC 2,过渡金属氯化物为ZnCl 2,这些原料均可以通过市售等途径获取。该Ti 3C 2Cl 2的制备方法如下: In this example, the MXene material with Cl as the surface group is Ti 3 C 2 Cl 2 , the precursor MAX phase is Ti 3 AlC 2 , and the transition metal chloride is ZnCl 2. These raw materials can be obtained through commercial sales and other methods. . The preparation method of the Ti 3 C 2 Cl 2 is as follows:
(1)称取粒度为600nm的ZnCl 20.5mol,粒度10μm的Ti 3AlC 2粉0.05mol,将上述材料研磨混合,得到混合产物。 (1) Weigh 0.5 mol of ZnCl 2 with a particle size of 600 nm and 0.05 mol of Ti 3 AlC 2 powder with a particle size of 10 μm, and grind and mix the above materials to obtain a mixed product.
(2)将混合物置于刚玉坩埚内,放入高温管式炉内进行反应。反应条件为:800℃,1小时,氩气保护。待管式炉温度降到室温后,取出坩埚内反应产物。(2) Place the mixture in a corundum crucible and place it in a high-temperature tube furnace for reaction. The reaction conditions were: 800°C, 1 hour, protected by argon. After the tube furnace temperature was lowered to room temperature, the reaction product in the crucible was taken out.
(3)用去离子水洗涤反应产物:将反应产物放入烧杯中,加入去离子水,搅拌并超声清洗30分钟后静置1小时,倒掉上清液。洗涤反应产物三次后,将其放入60℃的烘箱内,24小时后取出,得到固体产物。(3) Wash the reaction product with deionized water: put the reaction product in a beaker, add deionized water, stir and ultrasonically clean for 30 minutes, then stand for 1 hour, and pour off the supernatant. After washing the reaction product three times, it was placed in an oven at 60°C and taken out after 24 hours to obtain a solid product.
(4)将以上固体产物置于20mL质量分数为10%的稀盐酸中,浸泡2h,除去其中的Zn单质,得到Ti 3C 2Cl 2(4) Place the above solid product in 20 mL of dilute hydrochloric acid with a mass fraction of 10%, soak for 2 hours, and remove the Zn elemental substance therein to obtain Ti 3 C 2 Cl 2 .
图5是步骤4产物Ti 3C 2Cl 2MXene的扫描电镜图片,可以看出其表现出明显的MXene材料所特有的“手风琴”形貌结构,这是因为位于Ti 3C 2层间的Al原子被抽离,新嵌入的Cl原子引起Ti 3C 2Cl 2层之间的结合减弱,层间距增大,从而表现出多层结构。 Fig. 5 is a scanning electron microscope image of the product Ti 3 C 2 Cl 2 MXene in Step 4. It can be seen that it exhibits an obvious “accordion” morphology structure unique to MXene material, because of the Al located between Ti 3 C 2 layers. The atoms are pulled away, and the newly embedded Cl atoms cause the bonding between the Ti 3 C 2 Cl 2 layers to weaken and the interlayer spacing to increase, thereby exhibiting a multilayer structure.
实施例4Example 4
本实施例中,以Cl为表面基团的MXene材料为Ti 2CCl 2,前驱体MAX相为Ti 2AlC,过渡金属氯化物为ZnCl 2,这些原料均可以通过市售等途径获取。该Ti 2CCl 2的制备方法如下: In this embodiment, the MXene material with Cl as the surface group is Ti 2 CCl 2 , the precursor MAX phase is Ti 2 AlC, and the transition metal chloride is ZnCl 2. These raw materials can be obtained through commercial sales. The preparation method of the Ti 2 CCl 2 is as follows:
(1)称取粒度为1μm的ZnCl 20.5mol,粒度10μm的Ti 2AlC粉0.05mol,将上述材料研磨混合,得到混合产物。 (1) Weigh 0.5 mol of ZnCl 2 with a particle size of 1 μm and 0.05 mol of Ti 2 AlC powder with a particle size of 10 μm, and grind and mix the above materials to obtain a mixed product.
(2)将混合物置于刚玉坩埚内,放入高温管式炉内进行反应。反应条件为:550℃,3小时,氩气保护。待管式炉温度降到室温后,取出坩埚内反应产物。(2) Place the mixture in a corundum crucible and place it in a high-temperature tube furnace for reaction. The reaction conditions were: 550°C, 3 hours, argon protection. After the tube furnace temperature was lowered to room temperature, the reaction product in the crucible was taken out.
(3)用去离子水洗涤反应产物:将反应产物放入烧杯中,加入去离子水,搅拌并超声清洗30分钟后静置1小时,倒掉上清液。洗涤反应产物三次后,将其放入40℃的烘箱内,24小时后取出,得到固体产物。(3) Wash the reaction product with deionized water: put the reaction product in a beaker, add deionized water, stir and ultrasonically clean for 30 minutes, then stand for 1 hour, and pour off the supernatant. After washing the reaction product three times, it was placed in an oven at 40°C and taken out after 24 hours to obtain a solid product.
(4)将以上固体产物置于20mL质量分数为5%的稀盐酸中,浸泡2h,除去其中的Zn单质,得到Ti 2CCl 2(4) Put the above solid product in 20 mL of dilute hydrochloric acid with a mass fraction of 5% and soak for 2 hours to remove the Zn elemental substance to obtain Ti 2 CCl 2 .
图6前驱体是MAX相为Ti 2AlC,与步骤3和步骤4所得产物的XRD图谱对比。通过对比可以看出:经过步骤3反应后,产物的(103)、(106)、(110)等衍射峰强度明显减弱,说明产物在沿该晶面的有序程度下降;(002)、(004)、(006)等衍射峰明显向低角度偏移,其对应的晶胞参数c值增加至17.24nm,高于Ti 2AlC的c值13.52nm。以上XRD图谱变化说明位于Ti 2AlC层间的Al原子被抽离,且有新的原子嵌入。此外,产物中检测到了明显的Zn单质的衍射峰,这是因为ZnCl 2与Ti 2AlC中的Al原子发生化学反应导致,用盐酸浸泡后,Zn单质的衍射峰消失,得到Ti 2CCl 2MXene。另外产物中伴随少量的TiC杂质,这是前驱体Ti 2AlC中就存在的。 The precursor of FIG. 6 is that the MAX phase is Ti 2 AlC, and the XRD patterns of the products obtained in Step 3 and Step 4 are compared. It can be seen from the comparison: after the reaction in step 3, the intensity of the diffraction peaks such as (103), (106), (110) of the product is significantly weakened, indicating that the order of the product along the crystal plane decreases; (002), ( Diffraction peaks such as 004) and (006) shifted to a low angle, and the corresponding cell parameter c value increased to 17.24 nm, which was higher than the Ti 2 AlC c value of 13.52 nm. The above XRD pattern changes indicate that Al atoms located between the Ti 2 AlC layers are extracted and new atoms are inserted. In addition, a significant diffraction peak of elemental Zn was detected in the product, which was caused by a chemical reaction between ZnCl 2 and Al atoms in Ti 2 AlC. After immersion in hydrochloric acid, the diffraction peak of elemental Zn disappeared, and Ti 2 CCl 2 MXene . In addition, there is a small amount of TiC impurities in the product, which is present in the precursor Ti 2 AlC.
图7a是步骤4产物Ti 2CCl 2MXene的扫描电镜图片,可以看出其表现出明显的MXene材料所特有的“手风琴”形貌结构,这是因为位于Ti 2C层间的Al原子被抽离,新嵌入的Cl原子引起Ti 2CCl 2层之间的结合减弱,层间距增大,从而表现出多层结构。图7b是对图7a的能谱分析,可以看出其主要元素构成为Ti:C:Cl=31.3:23.8:33.7,接近2:1:2的比例,此外产物中有少量的O元素,这是产物洗涤过程中引入的。 Figure 7a is a scanning electron microscope image of the product Ti 2 CCl 2 MXene in Step 4. It can be seen that it exhibits a distinct “accordion” morphology characteristic of the MXene material, because Al atoms located between the Ti 2 C layers are extracted As a result, newly inserted Cl atoms cause the bonding between Ti 2 CCl 2 layers to weaken and the interlayer spacing to increase, thus exhibiting a multilayer structure. Figure 7b is the energy spectrum analysis of Figure 7a. It can be seen that the main element composition is Ti:C:Cl=31.3:23.8:33.7, which is close to the ratio of 2:1:2. In addition, there is a small amount of O element in the product. It was introduced during product washing.
图8是通过高分辨透射电子显微镜对步骤4产物Ti 2CCl 2的原子排列进行了确认,通过该图可以清晰的看出与Ti 2C层结合的Cl原子,确认了产物是Ti 2CCl 2Fig. 8 confirms the atomic arrangement of the Ti 2 CCl 2 product in Step 4 by high-resolution transmission electron microscopy. From this figure, it can be clearly seen that the Cl atoms bound to the Ti 2 C layer confirm that the product is Ti 2 CCl 2 .
实施例5Example 5
本实施例中,以Cl为表面基团的MXene材料为Ti 3C 2Cl 2,前驱体MAX相为Ti 3AlC 2,过渡金属氯化物为FeCl 2,这些原料均可以通过市售等途径获取。该Ti 3C 2Cl 2的制备方法如下: In this example, the MXene material with Cl as the surface group is Ti 3 C 2 Cl 2 , the precursor MAX phase is Ti 3 AlC 2 , and the transition metal chloride is FeCl 2. These raw materials can be obtained through commercially available methods. . The preparation method of the Ti 3 C 2 Cl 2 is as follows:
(1)称取粒度为700nm的FeCl 20.3mol,粒度10μm的Ti 3AlC 2粉0.05mol,将上述材料研磨混合,得到混合产物。 (1) Weigh 0.3 mol of FeCl 2 with a particle size of 700 nm and 0.05 mol of Ti 3 AlC 2 powder with a particle size of 10 μm, and grind and mix the above materials to obtain a mixed product.
(2)将混合物置于刚玉坩埚内,放入高温管式炉内进行反应。反应条件为:650℃,5小时,氩气保护。待管式炉温度降到室温后,取出坩埚内反应产物。(2) Place the mixture in a corundum crucible and place it in a high-temperature tube furnace for reaction. The reaction conditions were: 650°C, 5 hours, protected by argon. After the tube furnace temperature was lowered to room temperature, the reaction product in the crucible was taken out.
(3)用去离子水洗涤反应产物:将反应产物放入烧杯中,加入去离子水,搅拌并超声清洗30分钟后静置1小时,倒掉上清液。洗涤反应产物三次后,将其放入50℃的烘箱内,24小时后取出,得到固体产物。(3) Wash the reaction product with deionized water: put the reaction product in a beaker, add deionized water, stir and ultrasonically clean for 30 minutes, then stand for 1 hour, and pour off the supernatant. After washing the reaction product three times, it was placed in an oven at 50°C and taken out after 24 hours to obtain a solid product.
(4)将以上固体产物置于20mL质量分数为10%的稀盐酸中,浸泡10h,除去其中的Fe单质,得到Ti 3C 2Cl 2(4) Place the above solid product in 20 mL of dilute hydrochloric acid with a mass fraction of 10%, soak for 10 h, and remove the Fe elemental substance therein to obtain Ti 3 C 2 Cl 2 .
图9前驱体是MAX相为Ti 3AlC 2,与步骤3和步骤4所得产物的XRD图谱对比。通过对比可以看出:经过步骤3反应后,产物的(104)、(105)、(110)等衍射峰强度明显减弱,说明产物在沿该晶面的有序程度下降;(002)、(004)、(006)等衍射峰明显向低角度偏移。以上XRD图谱变化说明位于Ti 3AlC 2层间的Al原子被抽离,且有新的原子嵌入。此外,产物中检测到了明显的Fe单质的衍射峰,这是因为FeCl 2与Ti 3AlC 2中的Al原子发生化学反应导致,用盐酸浸泡后,Fe单质的衍射峰消失,得到高纯的Ti 3C 2Cl 2MXene。 The precursor of FIG. 9 is that the MAX phase is Ti 3 AlC 2 , and the XRD patterns of the products obtained in Step 3 and Step 4 are compared. It can be seen from the comparison that after the reaction in step 3, the intensity of the diffraction peaks (104), (105), (110) and other products of the product is significantly weakened, indicating that the order of the product along the crystal plane decreases; (002), ( Diffraction peaks such as 004) and (006) shifted significantly to low angles. The above XRD pattern changes indicate that Al atoms located between the Ti 3 AlC 2 layers are extracted and new atoms are inserted. In addition, a significant diffraction peak of elemental Fe was detected in the product. This is due to the chemical reaction between FeCl 2 and the Al atoms in Ti 3 AlC 2. After immersion in hydrochloric acid, the diffraction peak of elemental Fe disappeared and high purity Ti was obtained. 3 C 2 Cl 2 MXene.
图10是步骤4产物Ti 3C 2Cl 2MXene的扫描电镜图片,可以看出其表现出明显的MXene材料所特有的“手风琴”形貌结构,这是因为位于Ti 3C 2层间的Al原子被抽离,新嵌入的Cl原子引起Ti 3C 2Cl 2层之间的结合减弱,层间距增大,从而表现出多层结构。 Fig. 10 is a scanning electron microscope image of the product Ti 3 C 2 Cl 2 MXene in Step 4. It can be seen that it exhibits an obvious “accordion” morphology characteristic of the MXene material. This is due to the Al located between Ti 3 C 2 layers. The atoms are pulled away, and the newly embedded Cl atoms cause the bonding between the Ti 3 C 2 Cl 2 layers to weaken and the interlayer spacing to increase, thereby exhibiting a multilayer structure.
实施例6Example 6
本实施例中,以Cl为表面基团的MXene材料为Ti 3C 2Cl 2,前驱体MAX相为Ti 3SiC 2,过渡金属氯化物为CuCl 2,这些原料均可以通过市售等途径获取。该Ti 3C 2Cl 2的制备方法如下: In this example, the MXene material with Cl as the surface group is Ti 3 C 2 Cl 2 , the precursor MAX phase is Ti 3 SiC 2 , and the transition metal chloride is CuCl 2. These raw materials can be obtained through commercially available channels. . The preparation method of the Ti 3 C 2 Cl 2 is as follows:
(1)称取CuCl 20.3mol,粒度10μm的Ti 3AlC 2粉0.5mol,将上述材料研磨混合,得到混合产物。 (1) Weigh 0.3 mol of CuCl 2 and 0.5 mol of Ti 3 AlC 2 powder with a particle size of 10 μm, and grind and mix the above materials to obtain a mixed product.
(2)将混合物置于刚玉坩埚内,放入高温管式炉内进行反应。反应条件为:750℃,6小时,氩气保护。待管式炉温度降到室温后,取出坩埚内反应产物。(2) Place the mixture in a corundum crucible and place it in a high-temperature tube furnace for reaction. The reaction conditions were: 750°C, 6 hours, protected by argon. After the tube furnace temperature was lowered to room temperature, the reaction product in the crucible was taken out.
(3)用去离子水洗涤反应产物:将反应产物放入烧杯中,加入去离子水,搅拌并超声清洗30分钟后静置1小时,倒掉上清液。洗涤反应产物三次后,将其放入40℃的烘箱内,24 小时后取出,得到固体产物。(3) Wash the reaction product with deionized water: put the reaction product in a beaker, add deionized water, stir and ultrasonically clean for 30 minutes, then stand for 1 hour, and pour off the supernatant. After washing the reaction product three times, it was placed in an oven at 40°C and taken out after 24 hours to obtain a solid product.
(4)将以上固体产物置于20mL质量分数为10%的稀硝酸中,浸泡10h,除去其中的Cu单质,得到Ti 3C 2Cl 2(4) Place the above solid product in 20 mL of dilute nitric acid with a mass fraction of 10%, soak for 10 h, and remove the Cu element in it to obtain Ti 3 C 2 Cl 2 .
图11前驱体是MAX相为Ti 3SiC 2,与步骤3和步骤4所得产物的XRD图谱对比。通过对比可以看出:经过步骤3反应后,产物的(104)、(105)、(110)等衍射峰强度明显减弱,说明产物在沿该晶面的有序程度下降;(002)、(004)、(006)等衍射峰明显向低角度偏移。以上XRD图谱变化说明位于Ti 3SiC 2层间的Si原子被抽离,且有新的原子嵌入。此外,产物中检测到了明显的Cu单质的衍射峰,这是因为CuCl 2与Ti 3SiC 2中的Al原子发生化学反应导致,用硝酸浸泡后,Cu单质的衍射峰消失,得到高纯的Ti 3C 2Cl 2MXene。 The precursor of FIG. 11 is that the MAX phase is Ti 3 SiC 2 , and the XRD patterns of the products obtained in Step 3 and Step 4 are compared. It can be seen from the comparison that after the reaction in step 3, the intensity of the diffraction peaks (104), (105), (110) and other products of the product is significantly weakened, indicating that the order of the product along the crystal plane decreases; (002), ( Diffraction peaks such as 004) and (006) shifted significantly to low angles. The above XRD pattern changes indicate that Si atoms located between the Ti 3 SiC 2 layers are extracted and new atoms are inserted. In addition, a significant Cu element diffraction peak was detected in the product. This was due to the chemical reaction between CuCl 2 and the Al atoms in Ti 3 SiC 2. After soaking with nitric acid, the Cu element diffraction peak disappeared, resulting in high purity Ti 3 C 2 Cl 2 MXene.
图12是步骤4产物Ti 3C 2Cl 2MXene的扫描电镜图片,可以看出其表现出明显的MXene材料所特有的“手风琴”形貌结构,这是因为位于Ti 3C 2层间的Si原子被抽离,新嵌入的Cl原子引起Ti 3C 2Cl 2层之间的结合减弱,层间距增大,从而表现出多层结构。 Fig. 12 is a scanning electron microscope image of the product Ti 3 C 2 Cl 2 MXene in Step 4. It can be seen that it exhibits an obvious “accordion” morphology structure unique to MXene material, which is due to the Si located between Ti 3 C 2 layers. The atoms are pulled away, and the newly embedded Cl atoms cause the bonding between the Ti 3 C 2 Cl 2 layers to weaken and the interlayer spacing to increase, thereby exhibiting a multilayer structure.
实施例7Example 7
本实施例中,以Cl为表面基团的MXene材料为V 2CCl 2,前驱体MAX相为V 2AlC,过渡金属氯化物为CuCl 2,这些原料均可以通过市售等途径获取。该V 2CCl 2的制备方法如下: In this embodiment, the MXene material with Cl as the surface group is V 2 CCl 2 , the precursor MAX phase is V 2 AlC, and the transition metal chloride is CuCl 2. These raw materials can all be obtained through commercial sales. The preparation method of the V 2 CCl 2 is as follows:
(1)称取粒度为1μm的CuCl 20.5mol,粒度10μm的V 2AlC粉0.05mol,将上述材料研磨混合,得到混合产物。 (1) Weigh 0.5 mol of CuCl 2 with a particle size of 1 μm and 0.05 mol of V 2 AlC powder with a particle size of 10 μm, and grind and mix the above materials to obtain a mixed product.
(2)将混合物置于刚玉坩埚内,放入高温管式炉内进行反应。反应条件为:750℃,12小时,氩气保护。待管式炉温度降到室温后,取出坩埚内反应产物。(2) Place the mixture in a corundum crucible and place it in a high-temperature tube furnace for reaction. The reaction conditions are: 750°C, 12 hours, protected by argon. After the tube furnace temperature was lowered to room temperature, the reaction product in the crucible was taken out.
(3)用去离子水洗涤反应产物:将反应产物放入烧杯中,加入去离子水,搅拌并超声清洗30分钟后静置1小时,倒掉上清液。洗涤反应产物三次后,将其放入40℃的烘箱内,24小时后取出,得到固体产物。(3) Wash the reaction product with deionized water: put the reaction product in a beaker, add deionized water, stir and ultrasonically clean for 30 minutes, then stand for 1 hour, and pour off the supernatant. After washing the reaction product three times, it was placed in an oven at 40°C and taken out after 24 hours to obtain a solid product.
(4)将以上固体产物置于20mL质量分数为5%的稀盐酸中,浸泡2h,除去其中的Zn单质,得到Ti 2CCl 2(4) Put the above solid product in 20 mL of dilute hydrochloric acid with a mass fraction of 5% and soak for 2 hours to remove the Zn elemental substance to obtain Ti 2 CCl 2 .
图13前驱体是MAX相为V 2AlC和步骤4所得产物的XRD图谱对比。通过对比可以看出:经过步骤3反应后,产物的(103)、(106)、(110)等衍射峰强度明显减弱,说明产物在沿该晶面的有序程度下降;且(103)、(002)等衍射峰明显向低角度偏移,其对应的晶面间距增加。以上XRD图谱变化是由于位于V 2AlC层间的Al原子被抽离,Cl原子嵌入导致的晶胞参数增大所引起的。此外,值得注意的是,反应产物中有部分V 2AlC残留,这是因此V 2AlC中V-Al键结合较强,Al原子不容易被彻底抽离所导致的。 Fig. 13 is a comparison of XRD patterns of the precursor obtained by the MAX phase being V 2 AlC and the product obtained in step 4. It can be seen from the comparison that after the reaction in step 3, the intensity of the diffraction peaks of (103), (106), (110) and other products of the product is significantly weakened, indicating that the order of the product along the crystal plane decreases; and (103), (002) The iso-diffraction peak is obviously shifted to a low angle, and the corresponding interplanar spacing is increased. The above XRD pattern changes are caused by the increase of unit cell parameters due to the extraction of Al atoms between the V 2 AlC layers and the insertion of Cl atoms. In addition, it is worth noting that part of the V 2 AlC remains in the reaction product. This is due to the strong V-Al bonding in V 2 AlC and the fact that Al atoms are not easily extracted.
图14是步骤4产物V 2CCl 2MXene的扫描电镜图片,可以看出其表现出明显的MXene材料所特有的“手风琴”形貌结构,这是因为位于V 2AlC层间的Al原子被抽离,新嵌入的Cl原子引起V 2CCl 2层之间的结合减弱,层间距增大,从而表现出多层结构。 Fig. 14 is a scanning electron microscope image of the product V 2 CCl 2 MXene in Step 4. It can be seen that it exhibits a distinct “accordion” morphology characteristic of the MXene material, because Al atoms located between the V 2 AlC layers are extracted The newly inserted Cl atoms cause the bonding between the V 2 CCl 2 layers to weaken and the interlayer spacing to increase, thus exhibiting a multilayer structure.
此外,本案发明人还以本说明书述及的其它原料及工艺条件替代前述实施例1-7中的相应原料及工艺条件进行了相关实验,结果均显示,可以获得以Cl为表面基团的MXene材料。In addition, the inventors of this case also carried out related experiments by replacing the corresponding raw materials and process conditions in the foregoing Examples 1-7 with other raw materials and process conditions mentioned in this specification. The results all show that MXene with Cl as the surface group can be obtained material.
综述之,较之现有材料,本申请前述实施例提供的以Cl为表面基团的MXene材料的制备方法简单易行,环境友好,避免了传统利用氢氟酸刻蚀法制备MXene材料的诸多缺陷,得到的Cl为表面基团的MXene材料在电化学储能用电极材料、超级电容材料、电磁吸收与屏蔽材料、催化剂等领域有较好的应用。In summary, compared with existing materials, the preparation method of the MXene material with Cl as a surface group provided in the foregoing examples of the present application is simple and easy to implement, and is environmentally friendly, avoiding many traditional preparations of MXene materials by hydrofluoric acid etching Defects, the obtained MXene material with Cl as a surface group has good applications in the fields of electrode materials for electrochemical energy storage, supercapacitor materials, electromagnetic absorption and shielding materials, catalysts, etc.
实施例8Example 8
本实施例中,以Br为表面基团的MXene材料为Ti 3C 2Br 2,前驱体MAX相为Ti 3AlC 2,过渡金属氯化物为CuBr 2,这些原料均可以通过市售等途径获取。该Ti 3C 2Br 2的制备方法如下: In this example, the MXene material with Br as the surface group is Ti 3 C 2 Br 2 , the precursor MAX phase is Ti 3 AlC 2 , and the transition metal chloride is CuBr 2. These raw materials can be obtained through commercially available methods. . The preparation method of the Ti 3 C 2 Br 2 is as follows:
(1)称取CuBr 20.15摩尔,粒度10μm的Ti 3AlC 2粉0.05摩尔,将上述材料研磨混合,得到混合产物。 (1) Weigh 0.15 mol of CuBr 2 and 0.05 mol of Ti 3 AlC 2 powder with a particle size of 10 μm, and grind and mix the above materials to obtain a mixed product.
(2)将混合物置于刚玉坩埚内,放入高温管式炉内进行反应。反应条件为:700℃,7小时,氩气保护。待管式炉温度降到室温后,取出坩埚内反应产物。(2) Place the mixture in a corundum crucible and place it in a high-temperature tube furnace for reaction. The reaction conditions were: 700°C, 7 hours, argon protection. After the tube furnace temperature was lowered to room temperature, the reaction product in the crucible was taken out.
(3)用去离子水洗涤反应产物:将反应产物放入烧杯中,加入去离子水,搅拌并超声清洗30分钟后静置1小时,倒掉上清液。洗涤反应产物三次后,将其放入40℃的烘箱内,24小时后取出,得到固体产物。(3) Wash the reaction product with deionized water: put the reaction product in a beaker, add deionized water, stir and ultrasonically clean for 30 minutes, then stand for 1 hour, and pour off the supernatant. After washing the reaction product three times, it was placed in an oven at 40°C and taken out after 24 hours to obtain a solid product.
(4)将以上固体产物置于20mL事先配好的摩尔分数为1mol/L的APS溶液中,浸泡2h,除去其中的Cu单质,得到Ti 3C 2Br 2(4) Place the above solid product in 20 mL of APS solution with a molar fraction of 1 mol/L prepared in advance, and soak for 2 h to remove the Cu element in it to obtain Ti 3 C 2 Br 2 .
图15a是本实施例所获产物Ti 3C 2Br 2MXene材料的扫描电镜图片,可以看出其表现出明显的MXene材料所特有的“手风琴”形貌结构,这是因为位于Ti 3C 2层间的Al原子被抽离,新嵌入的Br原子引起Ti 3C 2Br 2层之间的结合减弱,层间距增大,从而表现出多层结构。图15b是对图15a的能谱分析,可以看出其主要元素构成为Ti:Br=30.8:22.42,接近3:2的比例,此外产物中有少量的O元素,这是产物洗涤过程中引入的,少量的Cu单质是反应过程中Cu 2+被还原生成的。 Fig. 15a is a scanning electron microscope image of the product Ti 3 C 2 Br 2 MXene material obtained in this example. It can be seen that it exhibits a distinct "accordion" morphology structure unique to MXene material, because it is located in Ti 3 C 2 The Al atoms between the layers are detached, and the newly inserted Br atoms cause the bonding between the Ti 3 C 2 Br 2 layers to weaken and the interlayer distance to increase, thereby exhibiting a multilayer structure. Figure 15b is the energy spectrum analysis of Figure 15a. It can be seen that the main element composition is Ti:Br=30.8:22.42, which is close to 3:2. In addition, there is a small amount of O element in the product, which is introduced during the product washing process. Yes, a small amount of Cu is produced by the reduction of Cu 2+ during the reaction.
实施例9Example 9
本实施例中,以Br为表面基团的MXene材料为Ti 3C 2Br 2,前驱体MAX相为Ti 3AlC 2,过渡金属氯化物为NiBr 2,这些原料均可以通过市售等途径获取。该Ti 3C 2Br 2的制备方法如下: In this example, the MXene material with Br as the surface group is Ti 3 C 2 Br 2 , the precursor MAX phase is Ti 3 AlC 2 , and the transition metal chloride is NiBr 2. These raw materials can be obtained through commercial sales and other methods. . The preparation method of the Ti 3 C 2 Br 2 is as follows:
(1)称取NiBr 20.75摩尔,粒度10μm的Ti 3AlC 2粉0.05摩尔,将上述材料研磨混合,得到混合产物。 (1) Weigh 0.75 mol of NiBr 2 and 0.05 mol of Ti 3 AlC 2 powder with a particle size of 10 μm, and grind and mix the above materials to obtain a mixed product.
(2)将混合物置于刚玉坩埚内,放入高温管式炉内进行反应。反应条件为:700℃,7小时,氩气保护。待管式炉温度降到室温后,取出坩埚内反应产物。(2) Place the mixture in a corundum crucible and place it in a high-temperature tube furnace for reaction. The reaction conditions were: 700°C, 7 hours, argon protection. After the tube furnace temperature was lowered to room temperature, the reaction product in the crucible was taken out.
(3)用去离子水洗涤反应产物:将反应产物放入烧杯中,加入去离子水,搅拌并超声清洗30分钟后静置1小时,倒掉上清液。洗涤反应产物三次后,将其放入40℃的烘箱内,24小时后取出,得到固体产物。(3) Wash the reaction product with deionized water: put the reaction product in a beaker, add deionized water, stir and ultrasonically clean for 30 minutes, then stand for 1 hour, and pour off the supernatant. After washing the reaction product three times, it was placed in an oven at 40°C and taken out after 24 hours to obtain a solid product.
(4)将以上固体产物置于20mL质量分数为10%的稀盐酸中,浸泡2h,除去其中的Ni单质,得到Ti 3C 2Br 2(4) Put the above solid product in 20 mL of dilute hydrochloric acid with a mass fraction of 10%, soak for 2 h, and remove the elemental Ni in it to obtain Ti 3 C 2 Br 2 .
图16前驱体是MAX相为Ti 3AlC 2,与步骤3和步骤4所得产物的XRD图谱对比。通过对比可以看出:经过步骤3反应后,产物的(104)、(105)、(110)等衍射峰强度明显减弱,说明产物在沿该晶面的有序程度下降;(002)、(004)、(006)等衍射峰明显向低角度偏移,其对应的晶胞参数c值增加至23.96nm,高于Ti 3AlC 2的c值18.48nm。以上XRD图谱变化与利用HF刻蚀Ti 3AlC 2制备Ti 3C 2MXene的变化过程是一致的,说明位于Ti 3AlC 2层间的Al原子被抽离,且有新的原子嵌入。此外,产物中检测到了明显的AlNi合金的衍射峰,这是因为NiBr 2与Ti 3AlC 2中的Al原子发生化学反应导致,用盐酸浸泡后,AlNi合金的衍射峰消失,得到高纯的Ti 3C 2B r2MXene。 The precursor of FIG. 16 is that the MAX phase is Ti 3 AlC 2 , and the XRD patterns of the products obtained in Step 3 and Step 4 are compared. It can be seen from the comparison that after the reaction in step 3, the intensity of the diffraction peaks (104), (105), (110) and other products of the product is significantly weakened, indicating that the order of the product along the crystal plane decreases; (002), ( Diffraction peaks such as 004) and (006) shifted to a low angle, and the corresponding cell parameter c value increased to 23.96 nm, which was higher than the c value of Ti 3 AlC 2 18.48 nm. The changes in the XRD pattern above are consistent with the changes in the preparation of Ti 3 C 2 MXene using HF etching of Ti 3 AlC 2 , indicating that the Al atoms located between the Ti 3 AlC 2 layers are extracted and new atoms are embedded. In addition, a significant AlNi alloy diffraction peak was detected in the product. This is due to the chemical reaction between NiBr 2 and the Al atoms in Ti 3 AlC 2. After immersion in hydrochloric acid, the diffraction peak of the AlNi alloy disappeared, resulting in high purity Ti 3 C 2 B r2 MXene.
图17是步骤4产物Ti 3C 2Br 2Mxene材料的扫描电镜图片,可以看出其表现出明显的MXene材料所特有的“手风琴”形貌结构,这是因为位于Ti 3C 2层间的Al原子被抽离,新嵌入的Br原子引起Ti 3C 2Br 2层之间的结合减弱,层间距增大,从而表现出多层结构。 Fig. 17 is a scanning electron microscope image of the Ti 3 C 2 Br 2 Mxene material in Step 4. It can be seen that it exhibits an obvious "accordion" morphology structure unique to MXene material, because it is located between Ti 3 C 2 layers. The Al atoms are pulled away, and the newly embedded Br atoms cause the bonding between the Ti 3 C 2 Br 2 layers to weaken and the interlayer distance to increase, thereby exhibiting a multilayer structure.
实施例10Example 10
本实施例中,以I为表面基团的MXene材料为Ti 3C 2I 2,前驱体MAX相为Ti 3AlC 2,过渡金属氯化物为CuI 2,这些原料均可以通过市售等途径获取。该Ti 3C 2I 2的制备方法如下: In this example, the MXene material with I as the surface group is Ti 3 C 2 I 2 , the precursor MAX phase is Ti 3 AlC 2 , and the transition metal chloride is CuI 2. These raw materials can be obtained through commercially available methods. . The preparation method of the Ti 3 C 2 I 2 is as follows:
(1)称取CuI 20.3摩尔,粒度10μm的Ti 3AlC 2粉0.05摩尔,将上述材料研磨混合,得到混合产物。 (1) Weigh 0.3 mol of CuI 2 and 0.05 mol of Ti 3 AlC 2 powder with a particle size of 10 μm, and grind and mix the above materials to obtain a mixed product.
(2)将混合物置于刚玉坩埚内,放入高温管式炉内进行反应。反应条件为:700℃,12小时,氩气保护。待管式炉温度降到室温后,取出坩埚内反应产物。(2) Place the mixture in a corundum crucible and place it in a high-temperature tube furnace for reaction. The reaction conditions are: 700°C, 12 hours, protected by argon. After the tube furnace temperature was lowered to room temperature, the reaction product in the crucible was taken out.
(3)用去离子水洗涤反应产物:将反应产物放入烧杯中,加入去离子水,搅拌并超声清洗30分钟后静置1小时,倒掉上清液。洗涤反应产物三次后,将其放入40℃的烘箱内,24小时后取出,得到固体产物。(3) Wash the reaction product with deionized water: put the reaction product in a beaker, add deionized water, stir and ultrasonically clean for 30 minutes, then stand for 1 hour, and pour off the supernatant. After washing the reaction product three times, it was placed in an oven at 40°C and taken out after 24 hours to obtain a solid product.
图18是前驱体是MAX相为Ti 3AlC 2,与步骤3所得产物的XRD图谱对比。通过对比可以看出:经过步骤3反应后,(002)、(004)、(006)等衍射峰明显向低角度偏移,其对应的晶胞参数c值增加至24.99nm,高于Ti 3AlC 2的c值18.48nm。以上XRD图谱变化与利用HF刻蚀Ti 3AlC 2制备Ti 3C 2MXene的变化过程是一致的,说明位于Ti 3AlC 2层间的Al原子被抽离,且有新的原子嵌入。此外,产物中检测到了明显的Cu单质和CuI的衍射峰,这是因为过量的CuI与Ti 3AlC 2中的Al原子发生化学反应,最终得到的MXene是Ti 3C 2I 2FIG. 18 is a comparison of the XRD pattern of the precursor obtained by the Ti phase AlC 2 with the MAX phase being Ti 3 AlC 2 . It can be seen from the comparison: after the reaction in step 3, the diffraction peaks (002), (004), (006) and so on are obviously shifted to a low angle, and the corresponding cell parameter c value increases to 24.99 nm, which is higher than Ti 3 The c value of AlC 2 is 18.48 nm. The changes in the XRD pattern above are consistent with the changes in the preparation of Ti 3 C 2 MXene using HF etching of Ti 3 AlC 2 , indicating that the Al atoms located between the Ti 3 AlC 2 layers are extracted and new atoms are embedded. In addition, distinct Cu and CuI diffraction peaks were detected in the product. This is because excessive CuI chemically reacted with Al atoms in Ti 3 AlC 2 , and the resulting MXene was Ti 3 C 2 I 2 .
图19a是步骤3产物Ti 3C 2I 2MXene的扫描电镜图片,可以看出其表现出明显的MXene材料所特有的“手风琴”形貌结构,这是因为位于Ti 3C 2层间的Al原子被抽离,新嵌入的I原子引起Ti 3C 2I 2层之间的结合减弱,层间距增大,从而表现出多层结构。图19b是对图19a的能谱分析,可以看出其主要元素构成为Ti:I=31.28:20.60,接近3:2的比例,此外产物中有少量的O元素,这是产物洗涤过程中引入的,少量的Cu单质是反应过程中Cu 2+被还原生成的。 Figure 19a is a scanning electron microscope image of the product Ti 3 C 2 I 2 MXene in Step 3, it can be seen that it exhibits an obvious "accordion" morphology structure unique to MXene material, because of the Al located between Ti 3 C 2 layers The atoms are pulled away, and the newly embedded I atoms cause the bonding between the Ti 3 C 2 I 2 layers to weaken and the layer spacing to increase, thereby showing a multilayer structure. Figure 19b is the energy spectrum analysis of Figure 19a. It can be seen that the main element composition is Ti:I=31.28:20.60, which is close to 3:2. In addition, there is a small amount of O element in the product, which is introduced during the product washing process. Yes, a small amount of Cu is produced by the reduction of Cu 2+ during the reaction.
实施例11Example 11
本实施例中,以Br为表面基团的MXene材料为Ti 3C 2Br 2,前驱体MAX相为Ti 3SiC 2,过渡金属溴化物为CuBr 2,这些原料均可以通过市售等途径获取。该Ti 3C 2Br 2的制备方法如下: In this example, the MXene material with Br as the surface group is Ti 3 C 2 Br 2 , the precursor MAX phase is Ti 3 SiC 2 , and the transition metal bromide is CuBr 2. These raw materials can be obtained through commercially available methods. . The preparation method of the Ti 3 C 2 Br 2 is as follows:
(1)称取CuBr 20.15摩尔,粒度10μm的Ti 3SiC 2粉0.05摩尔,将上述材料研磨混合,得到混合产物。 (1) Weigh 0.15 mol of CuBr 2 and 0.05 mol of Ti 3 SiC 2 powder with a particle size of 10 μm, and grind and mix the above materials to obtain a mixed product.
(2)将混合物置于刚玉坩埚内,放入高温管式炉内进行反应。反应条件为:700℃,10小时,氩气保护。待管式炉温度降到室温后,取出坩埚内反应产物。(2) Place the mixture in a corundum crucible and place it in a high-temperature tube furnace for reaction. The reaction conditions were: 700°C, 10 hours, protected by argon. After the tube furnace temperature was lowered to room temperature, the reaction product in the crucible was taken out.
(3)用去离子水洗涤反应产物:将反应产物放入烧杯中,加入去离子水,搅拌并超声清洗30分钟后静置1小时,倒掉上清液。洗涤反应产物三次后,将其放入40℃的烘箱内,24小时后取出,得到固体产物。(3) Wash the reaction product with deionized water: put the reaction product in a beaker, add deionized water, stir and ultrasonically clean for 30 minutes, then stand for 1 hour, and pour off the supernatant. After washing the reaction product three times, it was placed in an oven at 40°C and taken out after 24 hours to obtain a solid product.
(4)将以上固体产物置于20mL事先配好的摩尔分数为1mol/L的APS溶液中,浸泡2h,除去其中的Cu单质,得到Ti 3C 2Br 2(4) Place the above solid product in 20 mL of APS solution with a molar fraction of 1 mol/L prepared in advance, and soak for 2 h to remove the Cu element in it to obtain Ti 3 C 2 Br 2 .
实施例12Example 12
本实施例中,以Br为表面基团的MXene材料为Ti 3C 2Br 2,前驱体MAX相为Ti 3AlCN,过渡金属溴化物为CuBr 2,这些原料均可以通过市售等途径获取。该Ti 3C 2Br 2的制备方法如下: In this embodiment, the MXene material with Br as the surface group is Ti 3 C 2 Br 2 , the precursor MAX phase is Ti 3 AlCN, and the transition metal bromide is CuBr 2. These raw materials can be obtained through commercial sales. The preparation method of the Ti 3 C 2 Br 2 is as follows:
(1)称取CuBr 20.15摩尔,粒度10μm的Ti 3AlCN粉0.05摩尔,将上述材料研磨混合,得到混合产物。 (1) Weigh 0.15 mol of CuBr 2 and 0.05 mol of Ti 3 AlCN powder with a particle size of 10 μm, and grind and mix the above materials to obtain a mixed product.
(2)将混合物置于刚玉坩埚内,放入高温管式炉内进行反应。反应条件为:700℃,7 小时,氩气保护。待管式炉温度降到室温后,取出坩埚内反应产物。(2) Place the mixture in a corundum crucible and place it in a high-temperature tube furnace for reaction. The reaction conditions were: 700°C, 7 hours, argon protection. After the tube furnace temperature was lowered to room temperature, the reaction product in the crucible was taken out.
(3)用去离子水洗涤反应产物:将反应产物放入烧杯中,加入去离子水,搅拌并超声清洗30分钟后静置1小时,倒掉上清液。洗涤反应产物三次后,将其放入40℃的烘箱内,24小时后取出,得到固体产物。(3) Wash the reaction product with deionized water: put the reaction product in a beaker, add deionized water, stir and ultrasonically clean for 30 minutes, then stand for 1 hour, and pour off the supernatant. After washing the reaction product three times, it was placed in an oven at 40°C and taken out after 24 hours to obtain a solid product.
(4)将以上固体产物置于20mL事先配好的摩尔分数为1mol/L的APS溶液中,浸泡2h,除去其中的Cu单质,得到Ti 3C 2Br 2(4) Place the above solid product in 20 mL of APS solution with a molar fraction of 1 mol/L prepared in advance, and soak for 2 h to remove the Cu element in it to obtain Ti 3 C 2 Br 2 .
实施例13Example 13
本实施例中,以Br为表面基团的MXene材料为Sc 3C 2Br 2,前驱体MAX相为Sc 3AlC 2,过渡金属溴化物为CuBr 2,这些原料均可以通过市售等途径获取。该Ti 3C 2Br 2的制备方法如下: In this example, the MXene material with Br as the surface group is Sc 3 C 2 Br 2 , the precursor MAX phase is Sc 3 AlC 2 , and the transition metal bromide is CuBr 2. These raw materials can be obtained through commercial sales and other methods. . The preparation method of the Ti 3 C 2 Br 2 is as follows:
(1)称取CuBr 20.15摩尔,粒度10μm的Sc 3AlC 2粉0.05摩尔,将上述材料研磨混合,得到混合产物。 (1) Weigh 0.15 mol of CuBr 2 and 0.05 mol of Sc 3 AlC 2 powder with a particle size of 10 μm, and grind and mix the above materials to obtain a mixed product.
(2)将混合物置于刚玉坩埚内,放入高温管式炉内进行反应。反应条件为:400℃,48小时,氩气保护。待管式炉温度降到室温后,取出坩埚内反应产物。(2) Place the mixture in a corundum crucible and place it in a high-temperature tube furnace for reaction. The reaction conditions are: 400°C, 48 hours, protected by argon. After the tube furnace temperature was lowered to room temperature, the reaction product in the crucible was taken out.
(3)用去离子水洗涤反应产物:将反应产物放入烧杯中,加入去离子水,搅拌并超声清洗30分钟后静置1小时,倒掉上清液。洗涤反应产物三次后,将其放入40℃的烘箱内,24小时后取出,得到固体产物。(3) Wash the reaction product with deionized water: put the reaction product in a beaker, add deionized water, stir and ultrasonically clean for 30 minutes, then stand for 1 hour, and pour off the supernatant. After washing the reaction product three times, it was placed in an oven at 40°C and taken out after 24 hours to obtain a solid product.
(4)将以上固体产物置于20mL事先配好的摩尔分数为1mol/L的APS溶液中,浸泡2h,除去其中的Cu单质,得到Sc 3C 2Br 2(4) Place the above solid product in 20 mL of APS solution with a molar fraction of 1 mol/L prepared in advance, and soak for 2 hours to remove the Cu element in it to obtain Sc 3 C 2 Br 2 .
实施例14Example 14
本实施例中,以I为表面基团的MXene材料为Ta 3C 2I 2,前驱体MAX相为Ta 3AlC 2,过渡金属碘化物为CuI 2,这些原料均可以通过市售等途径获取。该Ta 3C 2I 2的制备方法如下: In this example, the MXene material with I as the surface group is Ta 3 C 2 I 2 , the precursor MAX phase is Ta 3 AlC 2 , and the transition metal iodide is CuI 2. These raw materials can be obtained through commercially available methods. . The preparation method of the Ta 3 C 2 I 2 is as follows:
(1)称取CuI 20.3摩尔,粒度10μm的Ta 3AlC 2粉0.03摩尔,将上述材料研磨混合,得到混合产物。 (1) Weigh 0.33 mol of CuI 2 and 0.03 mol of Ta 3 AlC 2 powder with a particle size of 10 μm, and grind and mix the above materials to obtain a mixed product.
(2)将混合物置于刚玉坩埚内,放入高温管式炉内进行反应。反应条件为:800℃,1小时,氩气保护。待管式炉温度降到室温后,取出坩埚内反应产物。(2) Place the mixture in a corundum crucible and place it in a high-temperature tube furnace for reaction. The reaction conditions were: 800°C, 1 hour, protected by argon. After the tube furnace temperature was lowered to room temperature, the reaction product in the crucible was taken out.
(3)用去离子水洗涤反应产物:将反应产物放入烧杯中,加入去离子水,搅拌并超声清洗30分钟后静置1小时,倒掉上清液。洗涤反应产物三次后,将其放入60℃的烘箱内,24小时后取出,得到固体产物。(3) Wash the reaction product with deionized water: put the reaction product in a beaker, add deionized water, stir and ultrasonically clean for 30 minutes, then stand for 1 hour, and pour off the supernatant. After washing the reaction product three times, it was placed in an oven at 60°C and taken out after 24 hours to obtain a solid product.
(4)将以上固体产物置于20mL事先配好的摩尔分数为1mol/L的APS溶液中,浸泡2h,除去其中的Cu单质,得到Ta 3C 2I 2(4) Place the above solid product in 20 mL of APS solution with a molar fraction of 1 mol/L prepared in advance, and soak for 2 h to remove the Cu element in it to obtain Ta 3 C 2 I 2 .
实施例15Example 15
本实施例中,以I为表面基团的MXene材料为Ti 3C 2I 2,前驱体MAX相为Ti 3AlC 2,过渡金属碘化物为NiI 2,这些原料均可以通过市售等途径获取。该Ti 3C 2I 2的制备方法如下: In this example, the MXene material with I as the surface group is Ti 3 C 2 I 2 , the precursor MAX phase is Ti 3 AlC 2 , and the transition metal iodide is NiI 2. These raw materials can be obtained through commercial and other means. . The preparation method of the Ti 3 C 2 I 2 is as follows:
(1)称取NiI 20.15摩尔,粒度10μm的Ti 3AlC 2粉0.05摩尔,将上述材料研磨混合,得到混合产物。 (1) Weigh 0.15 mol of NiI 2 and 0.05 mol of Ti 3 AlC 2 powder with a particle size of 10 μm, and grind and mix the above materials to obtain a mixed product.
(2)将混合物置于刚玉坩埚内,放入高温管式炉内进行反应。反应条件为:700℃,7小时,氩气保护。待管式炉温度降到室温后,取出坩埚内反应产物。(2) Place the mixture in a corundum crucible and place it in a high-temperature tube furnace for reaction. The reaction conditions were: 700°C, 7 hours, argon protection. After the tube furnace temperature was lowered to room temperature, the reaction product in the crucible was taken out.
(3)用去离子水洗涤反应产物:将反应产物放入烧杯中,加入去离子水,搅拌并超声清洗30分钟后静置1小时,倒掉上清液。洗涤反应产物三次后,将其放入50℃的烘箱内,24小时后取出,得到固体产物。(3) Wash the reaction product with deionized water: put the reaction product in a beaker, add deionized water, stir and ultrasonically clean for 30 minutes, then stand for 1 hour, and pour off the supernatant. After washing the reaction product three times, it was placed in an oven at 50°C and taken out after 24 hours to obtain a solid product.
(4)将以上固体产物置于20mL事先配好的质量分数为10%的HCl溶液中,浸泡2h,除去其中的Ni单质,得到Ti 3C 2I 2(4) Place the above solid product in 20 mL of a pre-formulated HCl solution with a mass fraction of 10% and soak for 2 hours to remove the Ni element in it to obtain Ti 3 C 2 I 2 .
实施例16Example 16
本实施例中,以Br为表面基团的MXene材料为Ti 2CBr 2,前驱体MAX相为Ti 2AlC,过渡金属溴化物为CuBr 2,这些原料均可以通过市售等途径获取。该Ti 3C 2Br 2的制备方法如下: In this embodiment, the MXene material with Br as the surface group is Ti 2 CBr 2 , the precursor MAX phase is Ti 2 AlC, and the transition metal bromide is CuBr 2. These raw materials can all be obtained through commercially available methods. The preparation method of the Ti 3 C 2 Br 2 is as follows:
(1)称取CuBr 20.15摩尔,粒度10μm的Ti 2AlC粉0.05摩尔,将上述材料研磨混合,得到混合产物。 (1) Weigh 0.15 mol of CuBr 2 and 0.05 mol of Ti 2 AlC powder with a particle size of 10 μm, and grind and mix the above materials to obtain a mixed product.
(2)将混合物置于刚玉坩埚内,放入高温管式炉内进行反应。反应条件为:700℃,24小时,氩气保护。待管式炉温度降到室温后,取出坩埚内反应产物。(2) Place the mixture in a corundum crucible and place it in a high-temperature tube furnace for reaction. The reaction conditions were: 700°C, 24 hours, argon protection. After the tube furnace temperature was lowered to room temperature, the reaction product in the crucible was taken out.
(3)用去离子水洗涤反应产物:将反应产物放入烧杯中,加入去离子水,搅拌并超声清洗30分钟后静置1小时,倒掉上清液。洗涤反应产物三次后,将其放入60℃的烘箱内,24小时后取出,得到固体产物。(3) Wash the reaction product with deionized water: put the reaction product in a beaker, add deionized water, stir and ultrasonically clean for 30 minutes, then stand for 1 hour, and pour off the supernatant. After washing the reaction product three times, it was placed in an oven at 60°C and taken out after 24 hours to obtain a solid product.
图20是本实施例所获产物Ti 3C 2Br 2MXene材料的扫描电镜图片,可以看出其表现出明显的MXene材料所特有的“手风琴”形貌结构,这是因为位于Ti 2C层间的Al原子被抽离,新嵌入的Br原子引起Ti 2CBr 2层之间的结合减弱,层间距增大,从而表现出多层结构。 Fig. 20 is a scanning electron micrograph of the product Ti 3 C 2 Br 2 MXene material obtained in this example. It can be seen that it exhibits a distinct "accordion" morphology structure unique to MXene material, because it is located in the Ti 2 C layer The Al atoms in between are extracted, and the newly embedded Br atoms cause the bonding between the Ti 2 CBr 2 layers to weaken and the interlayer distance to increase, thus showing a multilayer structure.
此外,本案发明人还以本说明书述及的其它原料及工艺条件替代前述实施例8-16中的相应原料及工艺条件进行了相关实验,结果均显示,可以获得以Br或I为表面基团的MXene材料。In addition, the inventors of this case also carried out related experiments by replacing the corresponding raw materials and process conditions in the foregoing Examples 8-16 with other raw materials and process conditions mentioned in this specification. The results all show that it is possible to obtain Br or I as the surface group MXene material.
综述之,较之现有材料,本申请前述实施例提供的以Br或I为表面基团的MXene材料其化学稳定性和热稳定性优于传统F为表面基团的MXene,其电学性能、介电性能等具有更 丰富的可调控空间,本申请所提供的制备方法简单易行,环境友好,避免了传统利用氢氟酸刻蚀法制备MXene材料的诸多缺陷,得到的Br或I为表面基团的MXene材料在电化学储能用电极材料、超级电容材料、电磁吸收与屏蔽材料、催化剂等领域有较好的应用。In summary, compared to existing materials, the chemical stability and thermal stability of the MXene material with Br or I as the surface group provided by the foregoing examples of the present application is superior to that of the traditional MXene with surface group F, and its electrical properties, Dielectric properties, etc. have more adjustable space, the preparation method provided in this application is simple and easy to operate, environmentally friendly, avoiding many defects of the traditional preparation of MXene material by hydrofluoric acid etching method, the obtained Br or I is the surface The group MXene material has good applications in electrode materials for electrochemical energy storage, supercapacitor materials, electromagnetic absorption and shielding materials, catalysts and other fields.
与早期报道的以-F、-O等为表面基团的MXene相比,本申请得到的-Br、-I表面基团能够在MXene层间发生可逆的氧化还原反应,在氧化还原反应过程中能够以液态或固态形式稳定存在于MXene层间,为电池充放电反应提供稳定的反应原料,该特点是-F、-O等气体元素基团所不具备的,因此本申请得到的以-Br、-I为表面基团的MXene材料能够独立作为大容量、高稳定性卤素电池电极材料在锂、钠、锌等离子电池领域获得应用。Compared with the earlier reported MXene with -F, -O, etc. as the surface group, the -Br and -I surface groups obtained in this application can undergo a reversible redox reaction between the MXene layers. During the redox reaction process It can stably exist in the liquid or solid form between the MXene layers and provide stable reaction raw materials for battery charge and discharge reactions. This feature is not available for gas element groups such as -F and -O, so the -Br obtained in this application The MXene material with -I as the surface group can be independently used as a large-capacity, high-stability halogen battery electrode material in the field of lithium, sodium, zinc and other ion batteries.
本申请的各方面、实施例、特征及实例应视为在所有方面为说明性的且不打算限制本申请,本申请的范围仅由权利要求书界定。在不背离所主张的本申请的精神及范围的情况下,所属领域的技术人员将明了其它实施例、修改及使用。The various aspects, embodiments, features, and examples of this application should be considered illustrative in all aspects and are not intended to limit this application, the scope of this application is only defined by the claims. Those skilled in the art will understand other embodiments, modifications, and uses without departing from the spirit and scope of the claimed application.
在本申请案中标题及章节的使用不意味着限制本申请;每一章节可应用于本申请的任何方面、实施例或特征。The use of titles and chapters in this application is not meant to limit this application; each chapter can be applied to any aspect, embodiment, or feature of this application.
在本申请案通篇中,在将组合物描述为具有、包含或包括特定组份之处或者在将过程描述为具有、包含或包括特定过程步骤之处,预期本申请教示的组合物也基本上由所叙述组份组成或由所叙述组份组成,且本申请教示的过程也基本上由所叙述过程步骤组成或由所叙述过程步骤组组成。Throughout this application, where the composition is described as having, containing, or including specific components, or where the process is described as having, containing, or including specific process steps, it is expected that the composition taught by this application is also substantially The above consists of the stated components or consists of the stated components, and the process taught in this application also basically consists of the stated process steps or consists of the stated process step groups.
除非另外具体陈述,否则术语“包含(include、includes、including)”、“具有(have、has或having)”的使用通常应理解为开放式的且不具限制性。Unless specifically stated otherwise, the use of the terms "include, includes, including" and "have, has, or having" should generally be understood as open-ended and not limiting.
应理解,各步骤的次序或执行特定动作的次序并非十分重要,只要本申请教示保持可操作即可。此外,可同时进行两个或两个以上步骤或动作。It should be understood that the order of each step or the order of performing specific actions is not very important, as long as the teaching of this application remains operable. In addition, two or more steps or actions can be performed simultaneously.
此外,本案发明人还参照前述实施例,以本说明书述及的其它原料、工艺操作、工艺条件进行了试验,并均获得了较为理想的结果。In addition, the inventor of the present case also conducted experiments with other raw materials, process operations, and process conditions described in this specification with reference to the foregoing embodiments, and all obtained relatively satisfactory results.
尽管已参考说明性实施例描述了本申请,但所属领域的技术人员将理解,在不背离本申请的精神及范围的情况下可做出各种其它改变、省略及/或添加且可用实质等效物替代所述实施例的元件。另外,可在不背离本申请的范围的情况下做出许多修改以使特定情形或材料适应本申请的教示。因此,本文并不打算将本申请限制于用于执行本申请的所揭示特定实施例,而是打算使本申请将包含归属于所附权利要求书的范围内的所有实施例。此外,除非具体陈述,否则术语第一、第二等的任何使用不表示任何次序或重要性,而是使用术语第一、第二等来区分一个元素与另一元素。Although the present application has been described with reference to illustrative embodiments, those skilled in the art will understand that various other changes, omissions and/or additions can be made and substance can be used without departing from the spirit and scope of the present application The effect replaces the elements of the described embodiments. In addition, many modifications may be made to adapt a particular situation or material to the teachings of the application without departing from the scope of the application. Therefore, this document does not intend to limit the application to the disclosed specific embodiments for carrying out the application, but intends that the application will include all embodiments falling within the scope of the appended claims. In addition, unless specifically stated, any use of the terms first, second, etc. does not indicate any order or importance, but the terms first, second, etc. are used to distinguish one element from another.

Claims (10)

  1. 一种MXene材料,其特征在于:所述MXene材料的分子式表示为M n+1X nY 2,其中M为Sc、Ti、V、Cr、Zr、Nb、Mo、Hf、Ta元素中的任意一种或者两种以上的组合,X为C、N元素中的任意一种或两种的组合,Y为Cl、Br、I元素中的任意一种或者两种以上的组合,n为1、2、3或4。 An MXene material, characterized in that the molecular formula of the MXene material is expressed as M n+1 X n Y 2 , where M is any of the elements of Sc, Ti, V, Cr, Zr, Nb, Mo, Hf, Ta One or a combination of two or more, X is any one or a combination of two elements of C and N, Y is any one or a combination of two or more elements of Cl, Br and I, n is 1, 2, 3 or 4.
  2. 根据权利要求1所述的MXene材料,其特征在于:所述的X为C xN y,其中x+y=1。 The MXene material according to claim 1, wherein said X is C x N y , where x+y=1.
  3. 根据权利要求1所述的MXene材料,其特征在于:所述MXene材料的晶体结构由M n+1X n单元以及位于所述M n+1X n单元表面的Y原子构成,其中Y原子与M原子成键结合。 The MXene material according to claim 1, wherein the crystal structure of the MXene material is composed of M n+1 X n units and Y atoms located on the surface of the M n+1 X n units, wherein the Y atoms are M atoms are bonded together.
  4. 根据权利要求1所述的MXene材料,其特征在于:所述MXene材料的形态为具有片层结构的粉体,所述片层结构由单层或多层M n+1X nY 2构成;优选的,所述片层结构的横向尺寸为5nm~50μm,单片厚度为0.5~20nm。 The MXene material according to claim 1, characterized in that: the form of the MXene material is a powder having a lamellar structure, and the lamellar structure is composed of a single layer or multiple layers M n+1 X n Y 2 ; Preferably, the lateral dimension of the sheet structure is 5 nm to 50 μm, and the thickness of the single sheet is 0.5 to 20 nm.
  5. 权利要求1-4中任一项所述MXene材料的制备方法,其特征在于包括:The preparation method of MXene material according to any one of claims 1 to 4, characterized in that it includes:
    将前驱体MAX相材料与过渡金属氯化物、过渡金属溴化物和过渡金属碘化物中的任意一种或两种以上的组合按1:3~1:10的摩尔比混合,并将所获混合物于惰性气氛中在400℃~800℃进行高温反应1~48h,之后进行后处理,获得所述MXene材料;Mix the precursor MAX phase material with any one or a combination of two or more of transition metal chloride, transition metal bromide and transition metal iodide in a molar ratio of 1:3 to 1:10, and mix the obtained mixture Performing a high-temperature reaction at 400°C to 800°C for 1 to 48 hours in an inert atmosphere, and then performing post-treatment to obtain the MXene material;
    所述前驱体MAX相材料的分子式表示为M n+1AX n,其中M为Sc、Ti、V、Cr、Zr、Nb、Mo、Hf、Ta元素中的任意一种或者两种以上的组合,A选自ⅢA或ⅣA族元素,X为C、N元素中的任意一种或两种的组合,n为1、2、3或4。 The molecular formula of the precursor MAX phase material is expressed as M n+1 AX n , where M is any one or a combination of two or more elements of Sc, Ti, V, Cr, Zr, Nb, Mo, Hf, and Ta , A is selected from Group IIIA or IVA elements, X is any one or a combination of two elements of C and N, and n is 1, 2, 3 or 4.
  6. 根据权利要求5所述的制备方法,其特征在于:所述前驱体MAX相材料包括Ti 3AlC 2、Ti 3SiC 2、Ti 2AlC、Ti 2AlN、Ti 4AlN 3、Ti 2GaC、V 2AlC、V 2GaC、Cr 2GaN、Cr 2AlC、Sc 2AlC、Zr 2AlC、Zr 2SnC、Nb 2AlC、Nb 4AlC 3、Mo 2AlC、Mo 2GaN、Hf 2AlC、Hf 2AlN、Ta 3AlC 2、Ta 4AlC 3中的任意一种或两种以上的组合。 The preparation method according to claim 5, wherein the precursor MAX phase material includes Ti 3 AlC 2 , Ti 3 SiC 2 , Ti 2 AlC, Ti 2 AlN, Ti 4 AlN 3 , Ti 2 GaC, V 2 AlC, V 2 GaC, Cr 2 GaN, Cr 2 AlC, Sc 2 AlC, Zr 2 AlC, Zr 2 SnC, Nb 2 AlC, Nb 4 AlC 3 , Mo 2 AlC, Mo 2 GaN, Hf 2 AlC, Hf 2 Any one or a combination of two or more of AlN, Ta 3 AlC 2 , and Ta 4 AlC 3 .
  7. 根据权利要求5所述的制备方法,其特征在于:所述过渡金属氯化物包括ZnCl 2、CuCl 2、CoCl 2、FeCl 2、NiCl 2中的任意一种或两种以上的组合;和/或,所述过渡金属溴化物包括CuBr 2、NiBr 2、FeBr 2和ZnBr 2中的任意一种或两种以上的组合;和/或,所述过渡金属碘化物包括CuI 2、NiI 2、FeI 2和ZnI 2中的任意一种或两种以上的组合。 The preparation method according to claim 5, wherein the transition metal chloride includes any one or a combination of two or more of ZnCl 2 , CuCl 2 , CoCl 2 , FeCl 2 , and NiCl 2 ; and/or , The transition metal bromide includes any one or a combination of two or more of CuBr 2 , NiBr 2 , FeBr 2, and ZnBr 2 ; and/or, the transition metal iodide includes CuI 2 , NiI 2 , FeI 2 And any one or a combination of two or more of ZnI 2 .
  8. 根据权利要求5所述的制备方法,其特征在于:所述前驱体MAX相材料为粉体、块体、薄膜中的任意一种或两种以上的组合;和/或,所述过渡金属氯化物、过渡金属溴化物或过渡金属碘化物为粉体,且粒度为500nm~1μm。The preparation method according to claim 5, characterized in that the precursor MAX phase material is any one or a combination of two or more of powder, bulk, and film; and/or, the transition metal chloride The compound, the transition metal bromide or the transition metal iodide is a powder, and the particle size is 500 nm to 1 μm.
  9. 如权利要求5所述的制备方法,其特征在于,所述的后处理包括:在所述的高温反应结束 后,用酸溶液除去反应生成的过渡金属单质,并以去离子水对所获的反应产物进行清洗,之后于40~60℃干燥,获得所述MXene材料。The preparation method according to claim 5, wherein the post-treatment includes: after the high-temperature reaction is completed, removing the transition metal element generated by the reaction with an acid solution, and using deionized water to obtain the The reaction product is washed and then dried at 40 to 60°C to obtain the MXene material.
  10. 权利要求1-4中任一项所述的MXene材料在制备电化学储能用电极材料、超级电容材料、电磁吸收与屏蔽材料或者催化剂领域中的用途。Use of the MXene material according to any one of claims 1 to 4 in the field of preparing electrode materials for electrochemical energy storage, supercapacitor materials, electromagnetic absorption and shielding materials, or catalysts.
PCT/CN2019/116627 2018-12-04 2019-11-08 Mxene material, preparation method therefor and application thereof WO2020114196A1 (en)

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