WO2020113780A1

WO2020113780A1 - Gate drive circuit based on temperature compensation and display device

Info

Publication number: WO2020113780A1
Application number: PCT/CN2019/071761
Authority: WO
Inventors: 邵伟
Original assignee: 深圳市华星光电半导体显示技术有限公司
Priority date: 2018-12-04
Filing date: 2019-01-15
Publication date: 2020-06-11
Also published as: CN109377958B; CN109377958A

Abstract

A gate drive circuit based on temperature compensation and a display device, the gate drive circuit being used in a liquid crystal panel, and comprising: a direct current voltage source (101), a voltage division unit (102), an amorphous silicon thin film transistor (103), a power source management module (104), and a gate drive module (105); the power source management module (104) adjusts the voltage value outputted to the gate drive module (105) on the basis of the voltage change of a common node, thereby adjusting the gate drive voltage of the pixel units of the display panel.

Description

Gate drive circuit and display based on temperature compensation

Technical field

The present application relates to the display field, and in particular to a gate drive circuit and a display based on temperature compensation.

Background technique

With the improvement of the performance of thin film transistors, GOA (English full name: Gate Driver Array , Chinese full name: integrated gate drive circuit) Drive technology has been widely used in display panels.

However, the on-state current of the thin film transistor will decrease significantly as the temperature decreases, resulting in the GOA drive circuit not working properly. In order to make GOA work normally at low temperature, temperature compensation is currently used. As the external temperature decreases, the resistance of the thermal unit increases, and the power chip uses this to increase the gate drive voltage, which increases the on-state current. , To ensure that the GOA drive circuit works normally. However, the use of thermal units will increase the cost.

Therefore, the existing technology has defects and needs to be improved urgently.

technical problem

The purpose of the present application is to provide a gate drive circuit and a liquid crystal display based on temperature compensation, which has the beneficial effect of reducing costs.

Technical solution

The present application provides a gate drive circuit based on temperature compensation, which is applied to a display panel, and includes: a DC voltage source, a voltage dividing unit, an amorphous silicon thin film transistor, a power management module, and a gate drive module;

One end of the DC voltage source is connected to the drain of the amorphous silicon thin film transistor, the drain of the amorphous silicon thin film transistor is connected to the gate of the amorphous silicon thin film transistor, and the amorphous silicon thin film transistor Is connected to one end of the voltage dividing unit, the other end of the voltage dividing unit is connected to the other end of the DC voltage source, the power management module is connected to the voltage dividing unit and the amorphous silicon The common node of the thin film transistor is connected, and the power management module is connected to the gate drive module;

The power management module adjusts the voltage value output to the gate driving module according to the voltage change of the common node, thereby adjusting the gate driving voltage of each pixel unit of the display panel;

Wherein, when the voltage of the common node decreases, the voltage output by the power management module to the gate driving module increases; the positive electrode of the DC voltage source is connected to the drain of the amorphous silicon thin film transistor , The negative electrode of the DC voltage source is connected to the voltage dividing unit and grounded.

In the gate drive circuit based on temperature compensation described in this application, the voltage dividing unit is a voltage dividing resistor.

In the gate drive circuit based on temperature compensation described in this application, the voltage dividing unit is a voltage dividing transistor.

In the gate drive circuit based on temperature compensation described in this application, the amorphous silicon thin film transistor is an NMOS tube.

In the gate drive circuit based on temperature compensation described in this application, the power management module includes a temperature compensation unit, a digital-to-analog conversion unit, a comparator, and a logic control unit; the gate drive module includes a switch unit and Gate voltage output unit;

The input terminal of the gate voltage output unit is connected to a preset voltage, and the output terminal of the gate voltage output unit is connected to the input terminal of the switch unit;

The input terminal of the temperature compensation unit is connected to the common node of the voltage dividing unit and the amorphous silicon thin film transistor, and the output terminal of the temperature compensation unit is connected to the input terminal of the digital-to-analog conversion unit. The output end of the digital-to-analog conversion unit is connected to the comparison voltage end of the comparator, the output end of the comparator is connected to the logic control unit, and the logic control unit is connected to the control end of the switch unit. The output of the switch unit is grounded.

In the gate drive circuit based on temperature compensation according to the present application, the gate drive module includes an inductor, a diode, and a capacitor, one end of the inductor is connected to the preset voltage, and the other end of the inductor, The input terminal of the switch unit is connected to the anode of the diode, the cathode of the diode serves as the output port of the gate drive module, one end of the capacitor is connected to the cathode of the diode, and the other of the capacitor One end is grounded.

In the gate drive circuit based on temperature compensation described in this application, the switching unit is an NMOS field effect transistor.

The present application also provides a gate drive circuit based on temperature compensation, which is applied to a display panel and is characterized by including: a DC voltage source, a voltage dividing unit, an amorphous silicon thin film transistor, a power management module, and a gate drive Module

The power management module adjusts the voltage value output to the gate driving module according to the voltage change of the common node, thereby adjusting the gate driving voltage of each pixel unit of the display panel.

In the gate drive circuit based on temperature compensation described in this application, when the voltage of the common node decreases, the voltage output by the power management module to the gate drive module increases.

In the gate drive circuit based on temperature compensation according to the present application, the positive electrode of the DC voltage source is connected to the drain of the amorphous silicon thin film transistor, and the negative electrode of the DC voltage source is connected to the voltage dividing unit And ground.

The present application also provides a display, which includes a gate drive circuit based on temperature compensation. The gate drive circuit based on temperature compensation is applied to a display panel and includes: a DC voltage source, a voltage dividing unit, and an amorphous Silicon thin film transistor, power management module and gate drive module;

In the display described in this application, the voltage dividing unit is a voltage dividing resistor.

In the display described in this application, the voltage dividing unit is a voltage dividing transistor.

In the display described in this application, when the voltage of the common node decreases, the voltage output by the power management module to the gate drive module increases.

Beneficial effect

The gate drive circuit and the display based on temperature compensation provided by the present application adopt an amorphous silicon thin film transistor to induce temperature change, and use one end of a DC voltage source to connect to the drain of the amorphous silicon thin film transistor. The drain of the crystalline silicon thin film transistor is connected to the gate of the amorphous silicon thin film transistor, the source of the amorphous silicon thin film transistor is connected to one end of the voltage dividing unit, and the other end of the voltage dividing unit is connected to the The other end of the DC voltage source is connected, the power management module is connected to the common node of the voltage dividing unit and the amorphous silicon thin film transistor, and the power management module is connected to the gate drive module; Thereby, temperature compensation is achieved, which has the beneficial effect of reducing costs.

BRIEF DESCRIPTION

In order to more clearly explain the technical solutions in the embodiments of the present application, the following will briefly introduce the drawings required in the description of the embodiments. Obviously, the drawings in the following description are only some embodiments of the present application. For those skilled in the art, without paying any creative work, other drawings can be obtained based on these drawings.

FIG. 1 is a schematic structural diagram of a gate drive circuit based on temperature compensation in an embodiment of the present application.

FIG. 2 is a schematic structural diagram of a power management module and a gate drive module in the gate drive circuit based on temperature compensation shown in FIG. 1.

FIG. 3 is a schematic diagram of a circuit principle of a gate driving circuit based on temperature compensation in an embodiment of the present application.

Embodiments of the invention

The embodiments of the present application are described in detail below, and examples of the embodiments are shown in the drawings, in which the same or similar reference numerals indicate the same or similar elements or elements having the same or similar functions throughout. The embodiments described below with reference to the drawings are exemplary, and are only used to explain the present application, and cannot be construed as limiting the present application.

In the description of this application, it should be understood that the terms "center", "longitudinal", "transverse", "length", "width", "thickness", "upper", "lower", "front", " Back, "Left", "Right", "Vertical", "Horizontal", "Top", "Bottom", "Inner", "Outer", "Clockwise", "Counterclockwise" etc. The positional relationship is based on the orientation or positional relationship shown in the drawings, and is only for the convenience of describing the application and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, Therefore, it cannot be understood as a limitation to this application. In addition, the terms “first” and “second” are used for description purposes only, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, features defined as "first" and "second" may explicitly or implicitly include one or more of the features. In the description of this application, the meaning of "plurality" is two or more, unless otherwise specifically limited.

The following disclosure provides many different implementations or examples for implementing different structures of the present application. In order to simplify the disclosure of the present application, the components and settings of specific examples are described below. Of course, they are only examples, and the purpose is not to limit this application. In addition, the present application may repeat reference numerals and/or reference letters in different examples. Such repetition is for the purpose of simplicity and clarity, and does not itself indicate the relationship between the various embodiments and/or settings discussed. In addition, the present application provides examples of various specific processes and materials, but those of ordinary skill in the art may be aware of the application of other processes and/or the use of other materials.

Please refer to FIG. 1, which is a schematic structural diagram of a gate driving circuit based on temperature compensation in an embodiment of the present application. As shown in FIG. 1, the gate drive circuit based on temperature compensation according to an embodiment of the present application is applied to a display panel and includes a DC voltage source 101, a voltage dividing unit 102, an amorphous silicon thin film transistor 103, a power management module 104, and Gate drive module 105.

One end of the DC voltage source 101 is connected to the drain of the amorphous silicon thin film transistor 103, the drain of the amorphous silicon thin film transistor 103 is connected to the gate of the amorphous silicon thin film transistor 103, and the source of the amorphous silicon thin film transistor 103 It is connected to one end of the voltage dividing unit 102, the other end of the voltage dividing unit 102 is connected to the other end of the DC voltage source 101, the power management module 104 is connected to the common node of the voltage dividing unit 102 and the amorphous silicon thin film transistor 103, and the power management The module 104 is connected to the gate driving module 105; the power management module 104 adjusts the voltage value output to the gate driving module 105 according to the voltage change of the common node, thereby adjusting the gate driving voltage of each pixel unit of the display panel. Wherein, when the voltage of the common node decreases, the voltage output by the power management module to the gate driving module increases.

In some embodiments, the voltage dividing unit 102 may be a voltage dividing resistor. Of course, other common voltage dividing elements may also be used, such as a voltage dividing transistor.

In some embodiments, the amorphous silicon thin film transistor 103 is an NMOS tube.

The anode of the DC voltage source 101 is connected to the drain of the amorphous silicon thin film transistor 103, and the cathode of the DC voltage source 101 is connected to the voltage dividing unit 102 and grounded.

Specifically, please refer to FIG. 2, which is a schematic structural diagram of a power management module and a gate drive module in the gate drive circuit based on temperature compensation shown in FIG. 1. As shown in FIG. 2, the power management module 104 includes a temperature compensation unit 1041, a digital-to-analog conversion unit 1042, a comparator 1043, and a logic control unit 1044; the gate drive module 105 includes a switching unit 1052 and a gate voltage output unit 1051.

The input terminal of the gate voltage output unit 1051 is connected to the preset voltage AVdd, the output terminal of the gate voltage output unit 1051 is connected to the input terminal of the switching unit 1052; the input terminal of the temperature compensation unit 1041 is connected to the voltage dividing unit 102 and the non-voltage The common node of the crystalline silicon thin film transistor 103 is connected, the output terminal of the temperature compensation unit 1041 is connected to the input terminal of the digital-analog conversion unit 1042, and the output terminal of the digital-analog conversion unit 1042 is connected to the comparison voltage terminal of the comparator 1043, The output terminal is connected to the logic control unit 1044, the logic control unit 1044 is connected to the control terminal of the switch unit 1052, and the output terminal of the switch unit 1052 is grounded. Wherein, the logic control unit 1044 can control the duty ratio of the switch unit 1052 to adjust the size of the gate driving voltage output by the gate voltage output unit 1051. When the temperature is low, the duty ratio is increased, and when the temperature is high, Reduce the duty cycle.

The comparison voltage terminal of the comparator 1043 is connected to the reference voltage.

Please also refer to FIG. 3, which is a schematic diagram of a circuit principle of a gate driving circuit based on temperature compensation in an embodiment of the present application. The gate voltage output unit 1051 includes an inductor L1, a diode D1, and a capacitor C1. One end of the inductor L1 is connected to a predetermined voltage AVdd, the other end of the inductor L1, the input terminal of the switching unit 1052, and the anode of the diode D1 are connected, and the diode D1 The negative electrode of is used as the output port of the gate voltage output unit 1052, one end of the capacitor C1 is connected to the negative electrode of the diode D1, and the other end of the capacitor C1 is grounded. The switching unit 1052 is an NMOS field effect transistor Q1.

Among them, the comparator 1043 obtains the reference voltage from the output terminal of the gate voltage output unit 1051 through a voltage divider circuit. The voltage divider circuit includes a resistor R1 and a resistor R2, wherein one end of the resistor R1 and the output end of the gate voltage output unit 1051 are also That is, the cathode of the diode D1 is connected, the other end of the resistor R1 is connected to one end of the resistor R2, the other end of the resistor R2 is grounded, the comparison voltage end of the comparator 1043 is connected to the common node of the resistor R1 and the resistor R2 to obtain the reference voltage, The magnitude of the reference voltage can be controlled by controlling the resistance of the resistor R1 and the resistor R2.

The gate drive circuit and the display based on temperature compensation provided by the present application adopt an amorphous silicon thin film transistor to sense the temperature change, and use one end of a DC voltage source to connect to the drain of the amorphous silicon thin film transistor. Is connected to the gate of the amorphous silicon thin film transistor, the source of the amorphous silicon thin film transistor is connected to one end of the voltage dividing unit, the other end of the voltage dividing unit is connected to the other end of the DC voltage source, and the power management module is connected to The voltage divider unit and the common node of the amorphous silicon thin film transistor are connected, and the power management module is connected to the gate drive module; thereby achieving temperature compensation and having the beneficial effect of reducing costs.

In the description of this specification, the descriptions referring to the terms "one embodiment", "certain embodiments", "schematic embodiments", "examples", "specific examples", or "some examples" mean that The specific features, structures, materials, or characteristics described in the embodiments or examples are included in at least one embodiment or example of the present application. In this specification, the schematic expression of the above terms does not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.

In summary, although the present application has been disclosed as preferred embodiments above, the above preferred embodiments are not intended to limit the present application. Those of ordinary skill in the art can make various changes without departing from the spirit and scope of the present application Such changes and retouching, so the scope of protection of this application shall be subject to the scope defined by the claims.

Claims

A gate drive circuit based on temperature compensation, which is applied to a display panel, includes: a DC voltage source, a voltage dividing unit, an amorphous silicon thin film transistor, a power management module, and a gate drive module;

One end of the DC voltage source is connected to the drain of the amorphous silicon thin film transistor, the drain of the amorphous silicon thin film transistor is connected to the gate of the amorphous silicon thin film transistor, and the amorphous silicon thin film transistor Is connected to one end of the voltage dividing unit, the other end of the voltage dividing unit is connected to the other end of the DC voltage source, the power management module is connected to the voltage dividing unit and the amorphous silicon The common node of the thin film transistor is connected, and the power management module is connected to the gate drive module;

The power management module adjusts the voltage value output to the gate driving module according to the voltage change of the common node, thereby adjusting the gate driving voltage of each pixel unit of the display panel;

Wherein, when the voltage of the common node decreases, the voltage output by the power management module to the gate driving module increases; the positive electrode of the DC voltage source is connected to the drain of the amorphous silicon thin film transistor , The negative electrode of the DC voltage source is connected to the voltage dividing unit and grounded.
The gate drive circuit based on temperature compensation according to claim 1, wherein the voltage dividing unit is a voltage dividing resistor.
The gate drive circuit based on temperature compensation according to claim 1, wherein the voltage dividing unit is a voltage dividing transistor.
The gate drive circuit based on temperature compensation according to claim 1, wherein the amorphous silicon thin film transistor is an NMOS tube.
The gate drive circuit based on temperature compensation according to claim 1, wherein the power management module includes a temperature compensation unit, a digital-to-analog conversion unit, a comparator, and a logic control unit; the gate drive module includes a switch Unit and gate voltage output unit;

The input terminal of the gate voltage output unit is connected to a preset voltage, and the output terminal of the gate voltage output unit is connected to the input terminal of the switch unit;

The input terminal of the temperature compensation unit is connected to the common node of the voltage dividing unit and the amorphous silicon thin film transistor, and the output terminal of the temperature compensation unit is connected to the input terminal of the digital-to-analog conversion unit. The output end of the digital-to-analog conversion unit is connected to the comparison voltage end of the comparator, the output end of the comparator is connected to the logic control unit, and the logic control unit is connected to the control end of the switch unit. The output of the switch unit is grounded.
The gate drive circuit based on temperature compensation according to claim 5, wherein the gate drive module includes an inductor, a diode, and a capacitor, one end of the inductor is connected to the preset voltage, and the other of the inductor One end, the input end of the switch unit and the anode of the diode are connected, the cathode of the diode is used as the output port of the gate drive module, and one end of the capacitor is connected to the cathode of the diode, the capacitor The other end is grounded.
The gate drive circuit based on temperature compensation according to claim 6, wherein the switching unit is an NMOS field effect transistor.
A gate drive circuit based on temperature compensation, which is applied to a display panel, includes: a DC voltage source, a voltage dividing unit, an amorphous silicon thin film transistor, a power management module, and a gate drive module;

One end of the DC voltage source is connected to the drain of the amorphous silicon thin film transistor, the drain of the amorphous silicon thin film transistor is connected to the gate of the amorphous silicon thin film transistor, and the amorphous silicon thin film transistor Is connected to one end of the voltage dividing unit, the other end of the voltage dividing unit is connected to the other end of the DC voltage source, the power management module is connected to the voltage dividing unit and the amorphous silicon The common node of the thin film transistor is connected, and the power management module is connected to the gate drive module;

The power management module adjusts the voltage value output to the gate driving module according to the voltage change of the common node, thereby adjusting the gate driving voltage of each pixel unit of the display panel.
The gate drive circuit based on temperature compensation according to claim 8, wherein the voltage dividing unit is a voltage dividing resistor.
The gate drive circuit based on temperature compensation according to claim 8, wherein the voltage dividing unit is a voltage dividing transistor.
The gate drive circuit based on temperature compensation according to claim 8, wherein the voltage output by the power management module to the gate drive module increases when the voltage of the common node decreases.
The gate drive circuit based on temperature compensation according to claim 8, wherein the amorphous silicon thin film transistor is an NMOS tube.
The gate drive circuit based on temperature compensation according to claim 8, wherein the positive electrode of the DC voltage source is connected to the drain of the amorphous silicon thin film transistor, and the negative electrode of the DC voltage source is connected to the divided voltage The unit is connected and grounded.
The gate drive circuit based on temperature compensation according to claim 8, wherein the power management module includes a temperature compensation unit, a digital-to-analog conversion unit, a comparator, and a logic control unit; the gate drive module includes a switch Unit and gate voltage output unit;

The input terminal of the gate voltage output unit is connected to a preset voltage, and the output terminal of the gate voltage output unit is connected to the input terminal of the switch unit;

The input terminal of the temperature compensation unit is connected to the common node of the voltage dividing unit and the amorphous silicon thin film transistor, and the output terminal of the temperature compensation unit is connected to the input terminal of the digital-to-analog conversion unit. The output end of the digital-to-analog conversion unit is connected to the comparison voltage end of the comparator, the output end of the comparator is connected to the logic control unit, and the logic control unit is connected to the control end of the switch unit. The output of the switch unit is grounded.
The gate drive circuit based on temperature compensation according to claim 14, wherein the gate drive module includes an inductor, a diode, and a capacitor, one end of the inductor is connected to the preset voltage, and the other of the inductor One end, the input end of the switch unit and the anode of the diode are connected, the cathode of the diode is used as the output port of the gate drive module, and one end of the capacitor is connected to the cathode of the diode, the capacitor The other end is grounded.
The gate drive circuit based on temperature compensation according to claim 15, wherein the switching unit is an NMOS field effect transistor.
A display includes a gate drive circuit based on temperature compensation. The gate drive circuit based on temperature compensation is applied to a display panel, and includes: a DC voltage source, a voltage dividing unit, an amorphous silicon thin film transistor, Power management module and gate drive module;

One end of the DC voltage source is connected to the drain of the amorphous silicon thin film transistor, the drain of the amorphous silicon thin film transistor is connected to the gate of the amorphous silicon thin film transistor, and the amorphous silicon thin film transistor Is connected to one end of the voltage dividing unit, the other end of the voltage dividing unit is connected to the other end of the DC voltage source, the power management module is connected to the voltage dividing unit and the amorphous silicon The common node of the thin film transistor is connected, and the power management module is connected to the gate drive module;

The power management module adjusts the voltage value output to the gate driving module according to the voltage change of the common node, thereby adjusting the gate driving voltage of each pixel unit of the display panel.
The display according to claim 17, wherein the voltage dividing unit is a voltage dividing resistor.
The gate drive circuit based on temperature compensation according to claim 17, wherein the voltage dividing unit is a voltage dividing transistor.
The display according to claim 17, wherein when the voltage of the common node decreases, the voltage output by the power management module to the gate driving module increases.