WO2020082660A1 - 一种直流耗能装置及其控制方法 - Google Patents

一种直流耗能装置及其控制方法 Download PDF

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Publication number
WO2020082660A1
WO2020082660A1 PCT/CN2019/076824 CN2019076824W WO2020082660A1 WO 2020082660 A1 WO2020082660 A1 WO 2020082660A1 CN 2019076824 W CN2019076824 W CN 2019076824W WO 2020082660 A1 WO2020082660 A1 WO 2020082660A1
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WIPO (PCT)
Prior art keywords
power semiconductor
energy consumption
voltage
semiconductor device
energy
Prior art date
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PCT/CN2019/076824
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English (en)
French (fr)
Inventor
谢晔源
姜田贵
李海英
Original Assignee
南京南瑞继保电气有限公司
南京南瑞继保工程技术有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by 南京南瑞继保电气有限公司, 南京南瑞继保工程技术有限公司 filed Critical 南京南瑞继保电气有限公司
Priority to EP19875448.3A priority Critical patent/EP3872944A4/en
Priority to JP2021520965A priority patent/JP7181998B2/ja
Priority to BR112021007160-1A priority patent/BR112021007160A2/pt
Priority to KR1020217009150A priority patent/KR102520741B1/ko
Priority to CN201910293205.6A priority patent/CN109921453B/zh
Publication of WO2020082660A1 publication Critical patent/WO2020082660A1/zh

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    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/32—Means for protecting converters other than automatic disconnection
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H9/00—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection
    • H02H9/04—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H7/00—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions
    • H02H7/20—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for electronic equipment
    • H02H7/205—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for electronic equipment for controlled semi-conductors which are not included in a specific circuit arrangement
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H9/00—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection
    • H02H9/04—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage
    • H02H9/042—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage comprising means to limit the absorbed power or indicate damaged over-voltage protection device
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/32—Means for protecting converters other than automatic disconnection
    • H02M1/34—Snubber circuits
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/36—Means for starting or stopping converters
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
    • Y02E60/60—Arrangements for transfer of electric power between AC networks or generators via a high voltage DC link [HVCD]

Definitions

  • This application relates to the technical field of high-power power electronic converters, in particular to a DC energy-consuming device and a control method thereof.
  • the DC energy dissipation device is mainly used in the application scenarios of island power supply. If the power generation terminal is an inertial power source similar to wind power, when the power receiving terminal fails, because the power cannot be sent, energy will be accumulated on the DC side, resulting in the voltage of the DC transmission line Elevated, causing harm to the safe operation of the equipment.
  • the current technical scheme commonly used in the prior art is to use power semiconductor devices, such as IGBT direct series and concentrated resistance schemes, which are subjected to high voltages by IGBT valve strings, and concentrated resistance consumes energy.
  • IGBT direct series and concentrated resistance schemes which are subjected to high voltages by IGBT valve strings, and concentrated resistance consumes energy.
  • IGBTs are turned on at the same time.
  • the consistency of opening and closing is extremely high. Once there is inconsistency, it will cause some valve segments to burn out due to overpressure. Due to continuous opening and closing during operation, the risk of device damage is very high.
  • An embodiment of the present application provides a DC energy dissipation device, characterized in that the DC energy dissipation device includes at least one energy consumption unit, and the energy consumption unit includes at least two voltage equalization energy consumption modules connected in series in the same direction
  • the voltage equalization energy dissipation module includes a DC capacitor branch and an energy dissipation branch connected in parallel, and the energy dissipation branch includes a first power semiconductor device and an energy dissipation resistor connected in series; the DC capacitor branch includes a direct current Content.
  • the DC capacitor branch further includes: a current limiting resistor or a current limiting inductor or a fuse, which is connected in series with the DC capacitor.
  • the DC energy dissipation device further includes at least one unidirectional conduction unit, the unidirectional conduction unit includes at least two second power semiconductor devices connected in series in the same direction, the unidirectional conduction unit and the energy consumption Units are connected in series.
  • the DC energy consuming device further includes at least one charging unit connected in series with the energy consuming unit, and the charging unit includes a charging resistor and a charging switch connected in parallel.
  • the DC energy consuming device further includes at least one disconnecting switch, and the disconnecting switch is connected in series with the energy consuming unit.
  • the DC energy dissipation device further includes at least one third power semiconductor device, the third power semiconductor device is connected in parallel with the voltage equalization energy dissipation module, and the third power semiconductor device is actively turned on or passively When wearing, the pressure equalizing energy consumption module is bypassed.
  • the voltage equalization energy consumption module further includes a voltage equalization resistor, which is connected in parallel with the DC capacitor branch.
  • the voltage equalizing energy dissipation module further includes a first bypass switch connected in parallel with the DC capacitor branch, and the first bypass switch includes a mechanical switch or a solid-state switch composed of power semiconductor devices.
  • the voltage equalizing energy consumption module further includes a second bypass branch connected in parallel with the DC capacitor branch, and the second bypass branch includes a second bypass switch connected in series and a first discharge For resistance, the second bypass switch includes a mechanical switch or a solid-state switch composed of power semiconductor devices.
  • the first bypass branch further includes a third bypass switch connected in parallel with the first power semiconductor device, and the third bypass switch includes a mechanical switch or a solid-state switch composed of a power semiconductor device.
  • the unidirectional conducting unit is connected with a non-linear resistor in parallel.
  • the first power semiconductor device is also anti-parallel connected with at least one diode.
  • At least one diode is connected in parallel with the energy dissipation resistor.
  • the second power semiconductor device is a diode or a semi-controlled power semiconductor device or a fully controlled power semiconductor device.
  • the first power semiconductor device is a fully controlled power semiconductor device.
  • An embodiment of the present application also provides a control method of a DC energy dissipation device, characterized in that the method includes: turning off the first power semiconductor device of the energy dissipation branch of all voltage equalization energy dissipation modules; using each DC capacitor And selectively turn on the first power semiconductor device to balance the voltage of each voltage equalizing energy consumption module.
  • the method further includes: a second power semiconductor device that turns on all unidirectional conduction units of the DC energy dissipation device.
  • the method further includes: turning off the charging switch and charging Charging the DC capacitor of the voltage equalizing energy consumption module; after charging is completed, closing the charging switch to bypass the charging resistor.
  • each DC capacitor and the selective conduction of the first power semiconductor device to equalize the voltage of each voltage equalizing energy dissipation module includes: when the DC voltage across the DC energy dissipation device rises above the first threshold, press Turning on part of the first power semiconductor devices at a certain regularity until all the first power semiconductor devices are turned off after the DC voltage returns to a normal value; when the DC voltage rises above a second threshold, all the first power semiconductor devices are turned on A power semiconductor device, until all the first power semiconductor devices are turned off until the DC voltage returns to a normal value.
  • the method further includes: when a failure of the voltage equalization energy consumption module is detected, turning off the first power semiconductor device of the energy consumption branch of the voltage equalization energy consumption module; closing the voltage equalization energy consumption module In the second bypass switch connected in parallel, the DC capacitor is discharged through the first discharge resistor of the second bypass branch; after detecting that the voltage of the DC capacitor is lower than the safe discharge value, it closes with the voltage equalization energy consumption The first bypass switch connected in parallel.
  • the method further includes: when a failure of the voltage equalization energy consumption module is detected, turning off the first power semiconductor device of the energy consumption branch of the voltage equalization energy consumption module; closing the first power semiconductor device A third bypass switch connected in parallel, the DC capacitor is discharged through an energy dissipation resistor; after detecting that the voltage of the DC capacitor is lower than a safe discharge value, the first bypass connected in parallel with the voltage equalization energy dissipation module is closed switch.
  • the method further includes: when a failure of the voltage equalization energy dissipation module is detected, and the voltage of the DC capacitor is lower than a safe discharge value, closing the first bypass switch connected in parallel with the voltage equalization energy dissipation module .
  • the method further includes: when a failure of the voltage equalization energy consumption module is detected, turning on a third power semiconductor device connected in parallel with the voltage equalization energy consumption module, and bypassing the voltage equalization energy consumption module.
  • the unidirectional conduction units are arranged centrally, which is convenient for monitoring and management.
  • the DC capacitors jointly withstand the line voltage, which reduces the risk of the power semiconductor device in the voltage equalization energy consumption module being subjected to overvoltage, and the capacitor has It plays a certain role in controlling the rate of rise and fall of the voltage.
  • the first power semiconductor device can be used to control the switching of the energy dissipation resistor to stabilize the DC voltage.
  • the device has a high cost performance. High reliability and easy implementation.
  • FIG. 1 is a topological structure diagram of a DC energy dissipation device provided by an embodiment of the present application
  • FIG. 2 is a topological structure diagram of a DC energy dissipation device provided by another embodiment of the present application.
  • FIG. 3 is a topological structure diagram of a DC energy dissipation device provided by another embodiment of the present application.
  • FIG. 4 is a topological structure diagram of a DC energy dissipation device provided by another embodiment of the present application.
  • FIG. 5 is a topological structure diagram of a DC energy dissipation device provided by another embodiment of the present application.
  • FIG. 6 is a topological structure diagram of a DC energy dissipation device provided by another embodiment of the present application.
  • FIG. 7 is a schematic diagram of the composition of a voltage equalization energy consumption module provided by an embodiment of the present application.
  • FIG. 8 is a schematic diagram of the composition of a voltage equalization energy consumption module provided by another embodiment of the present application.
  • FIG. 9 is a schematic diagram of the composition of a voltage equalization energy consumption module provided by another embodiment of the present application.
  • FIG. 10 is a schematic diagram of the composition of a voltage equalization energy consumption module provided by yet another embodiment of the present application.
  • FIG. 11 is a schematic flowchart of a method for controlling a DC energy consumption device according to an embodiment of the present application.
  • FIG. 12 is a schematic flowchart of a control method of a DC energy consumption device according to another embodiment of the present application.
  • FIG. 13 is a schematic flowchart of a control method of a DC energy consumption device according to another embodiment of the present application.
  • FIG. 14 is a schematic flowchart of a method for controlling a DC energy consumption device according to another embodiment of the present application.
  • 15 is a schematic flowchart of a method for controlling a DC energy consumption device according to yet another embodiment of the present application.
  • 16 is a schematic flowchart of a control method of a DC energy consumption device according to yet another embodiment of the present application.
  • FIG. 17 is a schematic flowchart of a method for controlling a DC energy consumption device according to yet another embodiment of the present application.
  • FIG. 18 is a schematic flowchart of a control method of a DC energy dissipation device according to still another embodiment of the present application.
  • FIG. 1 is a topological structure diagram of a DC energy consumption device according to an embodiment of the present application.
  • the DC energy consumption device 1 includes at least one energy consumption unit.
  • the DC energy dissipation device is connected in parallel between the medium and high voltage DC lines, one end is connected to the high potential electrode of the DC line, and the other end is connected to the low potential electrode of the DC line.
  • the energy consumption unit includes at least two voltage equalization energy consumption modules 2 connected in series in the same direction.
  • the voltage equalization energy consumption module 2 includes a DC capacitor branch and an energy consumption branch connected in parallel.
  • the energy-consuming branch includes a first power semiconductor device 5 and an energy-consuming resistor 6 connected in series.
  • the DC capacitor branch includes a DC capacitor 4.
  • the first power semiconductor device 5 is a fully controlled power semiconductor device.
  • the first power semiconductor device 5 may also be anti-parallel connected with at least one diode.
  • the energy dissipation resistor 6 can also be connected in parallel with at least one diode.
  • the voltage equalizing energy dissipation module 2 includes a first power semiconductor device 5, usually an IGBT with an anti-parallel diode, and the diodes at both ends of the energy dissipation resistor 6 are parallel.
  • the branch of the power semiconductor device in the voltage equalization energy dissipation module 2 is directly In series, the series branch contains only power semiconductor devices, and contains all power semiconductor devices, which can be pressed together during structural design, which greatly reduces the size of the device and helps to ensure the consistency of the work of the device. And reduce the equivalent inductance between devices
  • the technical solution provided by the embodiments of the present application uses a voltage equalizing energy dissipation module to split the device into sub-modules, each of which includes a DC capacitor and a current limiting resistor.
  • the DC capacitor and the current limiting resistor jointly withstand the line voltage, reducing the average voltage
  • the power semiconductor device in the voltage dissipation module is subject to the risk of overvoltage, and the capacitor has a replacement function, which plays a certain role in controlling the rate of rise and fall of the voltage.
  • the first power can be controlled by
  • the semiconductor device controls the switching of the energy-consuming resistor to stabilize the DC voltage, the device has a high cost performance, high reliability, and is easy to implement.
  • FIG. 2 is a topological structure diagram of a DC energy consuming device provided by another embodiment of the present application.
  • the DC energy consuming device 1 includes at least one energy consuming unit.
  • the energy consumption unit includes at least two voltage equalization energy consumption modules 2 connected in series in the same direction.
  • the voltage equalization energy consumption module 2 includes a DC capacitor branch and an energy consumption branch connected in parallel.
  • the energy-consuming branch includes a first power semiconductor device 5 and an energy-consuming resistor 6 connected in series.
  • the DC capacitor branch includes a DC capacitor 4 and a current limiting resistor 18 connected in series with the DC capacitor 4.
  • the current limiting resistor 18 can be replaced with a current limiting inductor or a fuse, and is not limited to this.
  • the first power semiconductor device 5 is a fully controlled power semiconductor device. As an alternative solution, the first power semiconductor device 5 may also be anti-parallel connected with at least one diode.
  • the energy dissipation resistor 6 can also be connected in parallel with at least one diode.
  • the unidirectional conducting units are arranged centrally to form a diode valve string, which is convenient for monitoring and management, and avoids the discharge of the capacitor bank to the fault point when the DC line is short-circuited, which plays a protective and isolation role.
  • the DC energy consumption device 1 includes at least one energy consumption unit, at least one unidirectional conduction unit, at least one charging unit, and at least one disconnect switch 14.
  • the energy consumption unit includes at least two voltage equalization energy consumption modules 2 connected in series in the same direction.
  • the unidirectional conducting unit includes at least two second power semiconductor devices 3 connected in series in the same direction.
  • the unidirectional conduction unit is connected in series with the energy consumption unit.
  • the voltage equalization energy consumption module 3 includes a DC capacitor branch and an energy consumption branch connected in parallel.
  • the energy-consuming branch includes a first power semiconductor device 5 and an energy-consuming resistor 6 connected in series.
  • the DC capacitor branch includes a DC capacitor 4.
  • the current limiting resistor 18 can be replaced with a current limiting inductor or a fuse, and is not limited to this.
  • the second power semiconductor device 3 and the first power semiconductor device 5 are arranged in the same direction as the direction of the allowed current.
  • the charging unit is connected in series with the energy consumption unit and the unidirectional conduction unit.
  • the charging unit includes a charging resistor 13 and a charging switch 12 connected in parallel.
  • the disconnect switch 14 is connected in series with the energy consumption unit and the unidirectional conduction unit.
  • the second power semiconductor device 3 includes a diode or a semi-controlled power semiconductor device or a fully controlled power semiconductor device.
  • the first power semiconductor device 5 is a fully controlled power semiconductor device.
  • the first power semiconductor device 5 may also be anti-parallel connected with at least one diode.
  • the energy dissipation resistor 6 can also be connected in parallel with at least one diode.
  • the DC energy consumption device 1 includes at least one energy consumption unit, at least one unidirectional conduction unit, at least one charging unit, at least one disconnect switch 14, and at least one third power semiconductor device 17.
  • the energy consumption unit includes at least two voltage equalization energy consumption modules 2 connected in series in the same direction.
  • the unidirectional conducting unit includes at least two second power semiconductor devices 3 connected in series in the same direction.
  • the unidirectional conduction unit is connected in series with the energy consumption unit.
  • the voltage equalization energy consumption module 2 includes a DC capacitor branch and an energy consumption branch connected in parallel.
  • the energy-consuming branch includes a first power semiconductor device 5 and an energy-consuming resistor 6 connected in series.
  • the DC capacitor branch includes a DC capacitor 4 and a current limiting resistor 18 connected in series with the DC capacitor 4.
  • the current limiting resistor 18 can be replaced with a current limiting inductor or a fuse, and is not limited to this.
  • the second power semiconductor device 3 and the first power semiconductor device 5 are arranged in the same direction as the direction of the allowed current.
  • the charging unit is connected in series with the energy consumption unit and the unidirectional conduction unit.
  • the charging unit includes a charging resistor 13 and a charging switch 12 connected in parallel.
  • the disconnect switch 14 is connected in series with the energy consumption unit and the unidirectional conduction unit.
  • the third power semiconductor device 17 is connected in parallel with the voltage equalization energy dissipation module 2. When the third power semiconductor device 17 is actively turned on or passively breakdown, the voltage equalization energy dissipation module 2 is bypassed.
  • the second power semiconductor device 3 includes a diode or a semi-controlled power semiconductor device or a fully controlled power semiconductor device.
  • the first power semiconductor device 5 is a fully controlled power semiconductor device.
  • the first power semiconductor device 5 may also be anti-parallel connected with at least one diode.
  • the energy dissipation resistor 6 can also be connected in parallel with at least one diode.
  • the DC energy dissipation device 1 includes at least one energy consumption unit, at least one unidirectional conduction unit, at least one charging unit, and at least one partition Switch 14, at least one third power semiconductor device 17.
  • the energy consumption unit includes at least two voltage equalization energy consumption modules 2 connected in series in the same direction.
  • the unidirectional conducting unit includes at least two second power semiconductor devices 3 connected in series in the same direction.
  • the unidirectional conduction unit is connected in series with the energy consumption unit.
  • the voltage equalizing energy consumption module 2 includes a DC capacitor branch connected in parallel, an energy consumption branch, and a voltage equalizing resistor 11.
  • the energy-consuming branch includes the first power semiconductor device 5 and the energy-consuming resistor 6 connected in series, and the voltage-equalizing resistor 11 is connected in parallel with the DC capacitor branch.
  • the energy-consuming branch includes a first power semiconductor device 5 and an energy-consuming resistor 6 connected in series.
  • the DC capacitor branch includes a DC capacitor 4.
  • the second power semiconductor device 3 and the first power semiconductor device 5 are arranged in the same direction as the direction of the allowed current.
  • the charging unit is connected in series with the energy consumption unit and the unidirectional conduction unit.
  • the charging unit includes a charging resistor 13 and a charging switch 12 connected in parallel.
  • the disconnect switch 14 is connected in series with the energy consumption unit and the unidirectional conduction unit.
  • the third power semiconductor device 17 is connected in parallel with the voltage equalization energy dissipation module 2. When the third power semiconductor device 17 is actively turned on or passively breakdown, the voltage equalization energy dissipation module 2 is bypassed.
  • the second power semiconductor device 3 includes a diode or a semi-controlled power semiconductor device or a fully controlled power semiconductor device.
  • the first power semiconductor device 5 is a fully controlled power semiconductor device.
  • the first power semiconductor device 5 may also be anti-parallel connected with at least one diode.
  • the energy dissipation resistor 6 can also be connected in parallel with at least one diode.
  • the DC energy dissipation device 1 includes at least one energy consumption unit, at least one unidirectional conduction unit, at least one charging unit, at least one disconnecting switch 14, at least one third power semiconductor device 17, at least one non-linear resistance 15, non-linear resistance 15 Connect in parallel with the unidirectional communication unit.
  • the energy consumption unit includes at least two voltage equalization energy consumption modules 2 connected in series in the same direction.
  • the unidirectional conducting unit includes at least two second power semiconductor devices 11 connected in series in the same direction.
  • the unidirectional conduction unit is connected in parallel with a nonlinear resistor 15 and connected in series with the energy consumption unit.
  • the voltage equalizing energy consumption module 2 includes a DC capacitor branch connected in parallel, an energy consumption branch, and a voltage equalizing resistor 11.
  • the energy-consuming branch includes the first power semiconductor device 5 and the energy-consuming resistor 6 connected in series, and the voltage-equalizing resistor 11 is connected in parallel with the DC capacitor branch.
  • the energy-consuming branch includes a first power semiconductor device 5 and an energy-consuming resistor 6 connected in series.
  • the DC capacitor branch includes a DC capacitor 4.
  • the second power semiconductor device 3 and the first power semiconductor device 5 are arranged in the same direction as the direction of the allowed current.
  • the charging unit is connected in series with the energy consumption unit and the unidirectional conduction unit.
  • the charging unit includes a charging resistor 13 and a charging switch 12 connected in parallel.
  • the disconnect switch 14 is connected in series with the energy consumption unit and the unidirectional conduction unit.
  • the third power semiconductor device 17 is connected in parallel with the voltage equalization energy dissipation module 2. When the third power semiconductor device 17 is actively turned on or passively breakdown, the voltage equalization energy dissipation module 2 is bypassed.
  • the second power semiconductor device 3 includes a diode or a semi-controlled power semiconductor device or a fully controlled power semiconductor device.
  • the first power semiconductor device 5 is a fully controlled power semiconductor device.
  • the first power semiconductor device 5 may also be anti-parallel connected with at least one diode.
  • the energy dissipation resistor 6 can also be connected in parallel with at least one diode.
  • the non-linear resistance is connected in parallel at both ends of the unidirectional conduction unit, which avoids the diode valve section from being subjected to overvoltage and is concentrated in protection, and the overall number is also reduced compared with the traditional solution.
  • the DC energy dissipation device 1 includes at least one energy consumption unit, at least one unidirectional conduction unit, at least one charging unit, and at least one disconnect switch 14. At least one nonlinear resistor 15.
  • the energy consumption unit includes at least two voltage equalization energy consumption modules 2 connected in series in the same direction.
  • the unidirectional conducting unit includes at least two second power semiconductor devices 11 connected in series in the same direction.
  • the unidirectional conduction unit is connected in parallel with a nonlinear resistor 15 and connected in series with the energy consumption unit.
  • the voltage equalizing energy consumption module 2 includes a DC capacitor branch connected in parallel, an energy consumption branch, a voltage equalizing resistor 11, and a first bypass switch 10.
  • the DC capacitor branch includes a DC capacitor 4.
  • the energy-consuming branch includes the first power semiconductor device 5 and the energy-consuming resistor 6 connected in series, and the voltage-equalizing resistor 11 is connected in parallel with the DC capacitor branch.
  • the first bypass switch 10 is connected in parallel with the DC capacitor branch.
  • the second power semiconductor device 3 and the first power semiconductor device 5 are arranged in the same direction as the direction of the allowed current.
  • the charging unit is connected in series with the energy consumption unit and the unidirectional conduction unit.
  • the charging unit includes a charging resistor 13 and a charging switch 12 connected in parallel.
  • the disconnect switch 14 is connected in series with the energy consumption unit and the unidirectional conduction unit.
  • the third power semiconductor device 17 is connected in parallel with the voltage equalization energy dissipation module 2. When the third power semiconductor device 17 is actively turned on or passively breakdown, the voltage equalization energy dissipation module 2 is bypassed.
  • the DC energy consumption device 1 includes at least two voltage equalization energy consumption modules 2 and at least two second power semiconductor devices 3, at least two voltage equalization energy consumption modules connected in series in the same direction to form at least one energy consumption unit, at least two The second power semiconductor devices 3 are connected in series in the same direction to form at least one unidirectional conduction unit, and the unidirectional conduction unit and the energy consumption unit are connected in series.
  • the voltage equalizing energy consumption module 2 includes a DC capacitor branch, an energy consumption branch, and a first bypass switch 10. The DC capacitor, the energy consumption branch, and the first bypass switch 10 are connected in parallel, and the energy consumption branch is routed to the first power semiconductor device. 5 is connected to the energy dissipation resistor 6 in series.
  • the second power semiconductor device 3 includes a diode or a semi-controlled power semiconductor device or a fully controlled power semiconductor device.
  • the first power semiconductor device 5 is a fully controlled power semiconductor device.
  • a diode is connected in antiparallel to the first power semiconductor device 5.
  • a diode 7 is connected in parallel with the energy dissipation resistor 6.
  • the first bypass switch is directly bypassed, which can realize the online switching of the energy consumption device in time and prevent the spread and continuation of the fault.
  • the DC energy consumption device 1 includes at least one energy consumption unit, at least one unidirectional conduction unit, at least one charging unit, at least one disconnect switch 14, and at least one nonlinear resistor 15.
  • the energy consumption unit includes at least two voltage equalization energy consumption modules 2 connected in series in the same direction.
  • the unidirectional conducting unit includes at least two second power semiconductor devices 11 connected in series in the same direction.
  • the unidirectional conduction unit is connected in parallel with a nonlinear resistor 15 and connected in series with the energy consumption unit.
  • the voltage equalization energy consumption module 2 includes a DC capacitor branch connected in parallel, an energy consumption branch, a voltage equalization resistor 11, a first bypass switch 10, and a second bypass branch.
  • the energy-consuming branch includes the first power semiconductor device 5 and the energy-consuming resistor 6 connected in series, and the voltage-equalizing resistor 11 is connected in parallel with the DC capacitor branch.
  • the DC capacitor branch includes a DC capacitor 4.
  • the first bypass switch 10 is connected in parallel with the DC capacitor branch.
  • the second bypass branch is connected in parallel with the DC capacitor branch and the first bypass switch 10, and the second bypass branch includes a second bypass switch 8 and a first discharge resistor 9 connected in series.
  • the second power semiconductor device 3 and the first power semiconductor device 5 are arranged in the same direction as the direction of the allowed current.
  • the charging unit is connected in series with the energy consumption unit and the unidirectional conduction unit.
  • the charging unit includes a charging resistor 13 and a charging switch 12 connected in parallel.
  • the disconnect switch 14 is connected in series with the energy consumption unit and the unidirectional conduction unit.
  • the third power semiconductor device 17 is connected in parallel with the voltage equalization energy dissipation module 2. When the third power semiconductor device 17 is actively turned on or passively breakdown, the voltage equalization energy dissipation module 2 is bypassed.
  • the second power semiconductor device 3 includes a diode or a semi-controlled power semiconductor device or a fully controlled power semiconductor device.
  • the first power semiconductor device 5 is a fully controlled power semiconductor device.
  • a diode is connected in antiparallel to the first power semiconductor device 5.
  • a diode 7 is connected in parallel with the energy dissipation resistor 6.
  • the voltage equalization energy-consuming module cannot play the energy-consuming role at this time, and there will be no serious consequences.
  • First close the second bypass branch Release the energy stored in the DC capacitor voltage, wait for the DC voltage to be lower than the safe discharge voltage, and then close the first bypass switch to avoid the direct short-circuit of the first bypass switch to cause a sudden short circuit of the DC capacitor, which affects the life of the DC capacitor.
  • the DC energy dissipation device 1 includes at least one energy consumption unit, at least one unidirectional conduction unit, at least one charging unit, and at least one partition Switch 14, at least one nonlinear resistor 15.
  • the energy consumption unit includes at least two voltage equalization energy consumption modules 2 connected in series in the same direction.
  • the unidirectional conducting unit includes at least two second power semiconductor devices 11 connected in series in the same direction.
  • the unidirectional conduction unit is connected in parallel with a nonlinear resistor 15 and connected in series with the energy consumption unit.
  • the voltage equalizing energy consumption module 2 includes a DC capacitor branch connected in parallel, an energy consumption branch, a voltage equalizing resistor 11, a first bypass switch 10, and a third bypass switch 16.
  • the energy-consuming branch includes a first power semiconductor device 5 and an energy-consuming resistor 6 connected in series, and a voltage-equalizing resistor 11 is connected in parallel with the DC capacitor 4.
  • the DC capacitor branch includes a DC capacitor 4.
  • the first bypass switch 10 is connected in parallel with the DC capacitor branch.
  • the third bypass switch 16 is connected in parallel with the first power semiconductor device 5.
  • the second power semiconductor device 3 and the first power semiconductor device 5 are arranged in the same direction as the direction of the allowed current.
  • the charging unit is connected in series with the energy consumption unit and the unidirectional conduction unit.
  • the charging unit includes a charging resistor 13 and a charging switch 12 connected in parallel.
  • the disconnect switch 14 is connected in series with the energy consumption unit and the unidirectional conduction unit.
  • the second power semiconductor device 3 includes a diode or a semi-controlled power semiconductor device or a fully controlled power semiconductor device.
  • the first power semiconductor device 5 is a fully controlled power semiconductor device.
  • a diode is connected in antiparallel to the first power semiconductor device 5.
  • a diode 7 is connected in parallel with the energy dissipation resistor 6.
  • the DC energy dissipation device 1 includes at least one energy consumption unit, at least one unidirectional conduction unit, at least one charging unit, and at least one partition Switch 14, at least one nonlinear resistor 15.
  • the energy consumption unit includes at least two voltage equalization energy consumption modules 2 connected in series in the same direction.
  • the unidirectional conducting unit includes at least two second power semiconductor devices 11 connected in series in the same direction.
  • the unidirectional conduction unit is connected in parallel with a nonlinear resistor 15 and connected in series with the energy consumption unit.
  • the voltage equalizing energy consumption module 2 includes a DC capacitor branch connected in parallel, an energy consumption branch, a voltage equalizing resistor 11, a third power semiconductor device 17, and a third bypass switch 16.
  • the energy-consuming branch includes the first power semiconductor device 5 and the energy-consuming resistor 6 connected in series, and the voltage-equalizing resistor 11 is connected in parallel with the DC capacitor branch.
  • the third power semiconductor device 17 is connected in parallel with the DC capacitor branch.
  • the DC capacitor branch includes a DC capacitor 4.
  • the third bypass switch 16 is connected in parallel with the first power semiconductor device 5.
  • the second power semiconductor device 3 and the first power semiconductor device 5 are arranged in the same direction as the direction of the allowed current.
  • the charging unit is connected in series with the energy consumption unit and the unidirectional conduction unit.
  • the charging unit includes a charging resistor 13 and a charging switch 12 connected in parallel.
  • the disconnect switch 14 is connected in series with the energy consumption unit and the unidirectional conduction unit.
  • the third power semiconductor device 17 is connected in parallel with the voltage equalization energy dissipation module 2. When the third power semiconductor device 17 is actively turned on or passively breakdown, the voltage equalization energy dissipation module 2 is bypassed.
  • the second power semiconductor device 3 includes a diode or a semi-controlled power semiconductor device or a fully controlled power semiconductor device.
  • the first power semiconductor device 5 is a fully controlled power semiconductor device.
  • a diode is connected in antiparallel to the first power semiconductor device 5.
  • a diode 7 is connected in parallel with the energy dissipation resistor 6.
  • the technical solution provided by the embodiment of the present application first closes the third bypass switch when the module fails.
  • the third power semiconductor device can also be bypassed to directly turn on the thyristor or overvoltage strike
  • the third power semiconductor device is used to bypass the module, and the voltage equalization energy consumption module is bypassed in time, which greatly improves the reliability of the bypass.
  • the voltage equalization energy consumption module 2 includes a DC capacitor 4 connected in parallel, an energy consumption branch, and a voltage equalization resistor 11.
  • the energy-consuming branch includes a first power semiconductor device 5 and an energy-consuming resistor 6 connected in series, and a voltage-equalizing resistor 11 is connected in parallel with the DC capacitor 4.
  • the voltage equalization energy dissipation module 2 includes a DC capacitor branch connected in parallel, an energy dissipation branch, a voltage equalization resistor 11, and a first side ⁇ ⁇ 10 ⁇ Road switch 10.
  • the energy-consuming branch includes the first power semiconductor device 5 and the energy-consuming resistor 6 connected in series, and the voltage-equalizing resistor 11 is connected in parallel with the DC capacitor branch.
  • the first bypass switch 10 is connected in parallel with the DC capacitor branch.
  • the first bypass switch 10 includes a mechanical switch or a solid-state switch composed of power semiconductor devices.
  • the DC capacitor branch includes a DC capacitor 4.
  • the voltage equalization energy consumption module 2 includes a DC capacitor branch connected in parallel, an energy consumption branch, a voltage equalization resistor 11, a first bypass switch 10, and a second bypass branch.
  • the energy-consuming branch includes the first power semiconductor device 5 and the energy-consuming resistor 6 connected in series, and the voltage-equalizing resistor 11 is connected in parallel with the DC capacitor branch.
  • the first bypass switch 10 is connected in parallel with the DC capacitor branch.
  • the DC capacitor branch includes a DC capacitor 4 and a current limiting resistor 18 connected in series with the DC capacitor 4.
  • the current limiting resistor 18 can be replaced with a current limiting inductor or a fuse, and is not limited to this.
  • the second bypass branch is connected in parallel with the DC capacitor branch.
  • the second bypass branch includes a second bypass switch 8 and a first discharge resistor 9 connected in series.
  • the second bypass switch 8 includes a mechanical switch or a solid-state switch composed of power semiconductor devices.
  • the first power semiconductor device 5 may also be anti-parallel connected with at least one diode.
  • the energy dissipation resistor 6 can also be connected in parallel with at least one diode 7.
  • the first power semiconductor device is usually an IGBT with an anti-parallel diode, and the diodes are connected in parallel at both ends of the energy dissipation resistor.
  • the series branch contains only power semiconductor devices, and includes all power semiconductor devices, which can be pressed together during structural design, greatly reducing the size of the device, while helping to ensure the consistency of the work of the device, and The equivalent inductance value between devices is reduced.
  • the voltage equalization energy dissipation module 2 includes a DC capacitor branch connected in parallel, an energy dissipation branch, a voltage equalization resistor 11, and a first side Way switch 10, second bypass branch, and third bypass switch 16.
  • the energy-consuming branch includes the first power semiconductor device 5 and the energy-consuming resistor 6 connected in series, and the voltage-equalizing resistor 11 is connected in parallel with the DC capacitor branch.
  • the DC capacitor branch includes a DC capacitor 4.
  • the first bypass switch 10 is connected in parallel with the DC capacitor branch.
  • the second bypass branch is connected in parallel with the DC capacitor branch.
  • the second bypass branch includes a second bypass switch 8 and a first discharge resistor 9 connected in series.
  • the third bypass switch 16 is connected in parallel with the first power semiconductor device 5.
  • the third bypass switch 16 includes a mechanical switch or a solid-state switch composed of power semiconductor devices. As shown in FIG. 9, the first power semiconductor device 5 may also be anti-parallel connected with at least one diode.
  • the energy dissipation resistor 6 can also be connected in parallel with at least one diode 7.
  • FIG. 10 is a schematic diagram of the composition of a voltage equalization energy dissipation module provided by yet another embodiment of the present application.
  • the circuit switch 16 and the voltage equalization energy consumption module 2 are also connected in parallel with a third power semiconductor device.
  • the energy-consuming branch includes the first power semiconductor device 5 and the energy-consuming resistor 6 connected in series, and the voltage-equalizing resistor 11 is connected in parallel with the DC capacitor branch.
  • the DC capacitor branch includes a DC capacitor 4.
  • the third bypass switch 16 is connected in parallel with the first power semiconductor device 5.
  • the third bypass switch 16 includes a mechanical switch or a solid-state switch composed of power semiconductor devices.
  • the third power semiconductor device 17 is connected in parallel with the voltage equalization energy dissipation module 2. When the third power semiconductor device 17 is actively turned on or passively breakdown, the voltage equalization energy dissipation module 2 is bypassed.
  • the first power semiconductor device 5 may also be anti-parallel connected with at least one diode.
  • the energy dissipation resistor 6 can also be connected in parallel with at least one diode 7.
  • the voltage equalization energy dissipation module of the above embodiment may be configured in the DC energy dissipation device according to actual needs.
  • FIG. 11 is a schematic flowchart of a method for controlling a DC energy consumption device according to an embodiment of the present application, including the following steps.
  • step S110 the first power semiconductor devices of the energy-consuming branches of all the voltage-equalizing energy-consuming modules are turned off.
  • the first power semiconductor device in the voltage equalization energy consumption module is turned off.
  • step S130 each DC capacitor and the first power semiconductor device are selectively turned on to balance the voltage of each voltage equalizing energy consumption module.
  • the voltage equalization energy consumption modules are used to equalize the voltage of the capacitors in each voltage equalization energy consumption module.
  • the DC energy dissipation device can share the charging circuit with the adjacent converter, and the DC capacitor in the DC energy dissipation device and the capacitor of the inverter sub-module are simultaneously charged.
  • FIG. 12 is a schematic flowchart of a method for controlling a DC energy consumption device according to another embodiment of the present application. When the device is started, the method includes the following steps.
  • step S110 the first power semiconductor devices of the energy dissipation branches of all the voltage equalization energy dissipation modules are turned off. At this time, the charging switch is turned off, and the isolation switch is turned off.
  • step S120 the second power semiconductor devices of all the unidirectional conduction units of the DC energy dissipation device are turned on. Specifically, in other embodiments, if there is no unidirectional conduction unit, the second power semiconductor device does not need to be turned on.
  • step S130 each DC capacitor and the first power semiconductor device are selectively turned on to balance the voltage of each voltage equalizing energy consumption module. That is to say, the energy consumption branch is used to equalize the voltage of the capacitors in each voltage equalization energy consumption module.
  • FIG. 13 is a schematic flowchart of a control method of a DC energy consumption device according to another embodiment of the present application.
  • the charging unit is used to charge the device, which includes the following steps.
  • step S110 the first power semiconductor devices of the energy dissipation branches of all the voltage equalization energy dissipation modules are turned off. At this time, the charging switch is turned off, and the isolation switch is turned off.
  • step S121 after the DC line is charged, the disconnect switch is closed, and the DC capacitor of the voltage equalizing energy consumption module is charged through the charging resistor.
  • step S122 after the charging is completed, the charging switch is closed to bypass the charging resistor.
  • step S130 each DC capacitor and the first power semiconductor device are selectively turned on to balance the voltage of each voltage equalizing energy consumption module. That is to say, the energy consumption branch is used to equalize the voltage of the capacitors in each voltage equalization energy consumption module.
  • FIG. 14 is a schematic flowchart of a method for controlling a DC energy consumption device according to yet another embodiment of the present application, including the following steps.
  • step S110 the first power semiconductor devices of the energy-consuming branches of all the voltage-equalizing energy-consuming modules are turned off.
  • the first power semiconductor device in the voltage equalization energy consumption module is in an off state.
  • step S120 the second power semiconductor devices of all the unidirectional conduction units of the DC energy dissipation device are turned on.
  • step S131 when the DC line is overvoltage, when the DC voltage across the DC energy dissipation device rises above the first threshold, a part of the first power semiconductor device is turned on according to a certain rule until all DC A power semiconductor device.
  • the energy consumption mode when the DC line is overvoltage, the energy consumption mode is entered.
  • the normal value is 400 kV
  • the first threshold for setting the voltage control target is 420 kV
  • the second threshold is 440 kV.
  • the first power semiconductor device in the partial voltage equalization energy consumption module is turned on according to a certain rule. At this time, energy is consumed due to the input of the resistor, and the change of the DC voltage value depends on the speed of energy accumulation and the speed of consumption.
  • the energy consumption speed is greater than the accumulation speed, it is detected that the DC voltage returns to 400 kV and below, and the first power semiconductor device in the voltage equalization energy consumption module is turned off.
  • step S132 when the DC voltage rises above the second threshold, all the first power semiconductor devices are turned on until all the first power semiconductor devices are turned off after the DC voltage returns to the normal value.
  • the DC voltage continues to rise and the DC voltage exceeds 440 kV.
  • the first power semiconductor devices in all voltage-sharing energy dissipation modules are simultaneously turned on to release the DC side with maximum energy dissipation capacity Accumulate energy.
  • the first power semiconductor device in the voltage equalization energy consumption module is turned off.
  • the voltage equalization energy consumption module fails, it includes multiple bypass methods.
  • 15 is a schematic flowchart of a method for controlling a DC energy consumption device according to yet another embodiment of the present application, including the following steps.
  • step S110 the first power semiconductor devices of the energy-consuming branches of all the voltage-equalizing energy-consuming modules are turned off.
  • step S120 the second power semiconductor devices of all the unidirectional conduction units of the DC energy dissipation device are turned on.
  • step S130 each DC capacitor and the first power semiconductor device are selectively turned on to balance the voltage of each voltage equalizing energy consumption module.
  • step S140 when a failure of the voltage equalization energy consumption module is detected, the first power semiconductor device of the energy consumption branch of the voltage equalization energy consumption module is turned off.
  • step S150 the second bypass switch connected in parallel with the voltage equalizing energy consumption module is closed, and the DC capacitor is discharged through the first discharge resistance of the second bypass branch.
  • step S160 after detecting that the voltage of the DC capacitor is lower than the discharge safety value, the first bypass switch connected in parallel with the voltage equalizing energy consumption module is closed.
  • the second bypass switch when the module fails, the second bypass switch is first closed to release the energy stored in the DC capacitor voltage, and the DC bypass voltage is lower than the safe discharge voltage before closing the first bypass branch
  • the bypass switch avoids the sudden short circuit of the DC capacitor caused by directly closing the first bypass switch, which affects the life of the DC capacitor.
  • FIG. 16 is a schematic flowchart of a method for controlling a DC energy consumption device according to still another embodiment of the present application, including the following steps.
  • step S110 the first power semiconductor devices of the energy-consuming branches of all the voltage-equalizing energy-consuming modules are turned off.
  • step S120 the second power semiconductor devices of all the unidirectional conduction units of the DC energy dissipation device are turned on.
  • step S130 each DC capacitor and the first power semiconductor device are selectively turned on to balance the voltage of each voltage equalizing energy consumption module.
  • step S140 when a failure of the voltage equalization energy consumption module is detected, the first power semiconductor device of the energy consumption branch of the voltage equalization energy consumption module is turned off.
  • step S141 the third bypass switch connected in parallel with the first power semiconductor device is closed, and the DC capacitor is discharged through the energy dissipation resistor.
  • step S160 after detecting that the voltage of the DC capacitor is lower than the discharge safety value, the first bypass switch connected in parallel with the voltage equalizing energy consumption module is closed.
  • the device includes a third bypass switch and includes a first bypass switch, the above steps are performed. If the device includes the third bypass switch and does not include the first bypass switch, there is no step S160, then the DC capacitor is discharged through the energy dissipation resistor of the voltage equalization energy dissipation module. Current.
  • the third bypass switch when the module fails, the third bypass switch is closed first, the energy stored in the DC capacitor voltage is released, and the energy consumption resistor is used as the discharge resistor, which can save costs and improve equipment utilization.
  • the third bypass switch can be a mechanical switch or a solid-state switch, which can be used as a backup and redundancy for the first power semiconductor device, wait for the DC voltage to be lower than the safe discharge voltage, and then close the bypass switch of the first bypass branch, It avoids the sudden short circuit of the DC capacitor caused by directly closing the first bypass switch, which affects the life of the DC capacitor.
  • 17 is a schematic flowchart of a method for controlling a DC energy dissipation device according to yet another embodiment of the present application, including the following steps.
  • step S110 the first power semiconductor devices of the energy-consuming branches of all the voltage-equalizing energy-consuming modules are turned off.
  • step S120 the second power semiconductor devices of all the unidirectional conduction units of the DC energy dissipation device are turned on.
  • step S130 each DC capacitor and the first power semiconductor device are selectively turned on to balance the voltage of each voltage equalizing energy consumption module.
  • step S170 when a failure of the voltage equalization energy consumption module is detected, and the voltage of the DC capacitor is lower than the discharge safety value, the first bypass switch connected in parallel with the voltage equalization energy consumption module is closed.
  • the technical solution provided by the embodiments of the present application can also directly close the first bypass switch in case of some serious faults, and bypass the voltage equalization energy consumption module in time, which further improves the reliability of the bypass.
  • FIG. 18 is a schematic flowchart of a method for controlling a DC energy consumption device according to still another embodiment of the present application, including the following steps.
  • step S110 the first power semiconductor devices of the energy-consuming branches of all the voltage-equalizing energy-consuming modules are turned off.
  • step S120 the second power semiconductor devices of all the unidirectional conduction units of the DC energy dissipation device are turned on.
  • step S130 each DC capacitor and the first power semiconductor device are selectively turned on to balance the voltage of each voltage equalizing energy consumption module.
  • step S180 when a failure of the voltage equalization energy consumption module is detected, the third power semiconductor device connected in parallel with the voltage equalization energy consumption module is turned on, and the voltage equalization energy consumption module is bypassed.
  • the third power semiconductor device includes but is not limited to a thyristor.
  • the technical solution provided by the embodiments of the present application may also adopt the bypass mode of the third power semiconductor device in some serious fault situations, directly turning on the thyristor or over-voltage breakdown of the third power semiconductor device to bypass the module and bypass
  • the voltage equalization energy consumption module greatly improves the reliability of the bypass.

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Direct Current Feeding And Distribution (AREA)
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  • Dc-Dc Converters (AREA)
  • Emergency Protection Circuit Devices (AREA)
  • Power Conversion In General (AREA)

Abstract

本申请提供一种直流耗能装置及其控制方法。所述直流耗能装置包括：至少一个能耗单元，包括同方向串联连接的至少两个均压耗能模块；所述均压耗能模块包括并联连接的直流电容支路、耗能支路，所述耗能支路包括串联连接的第一功率半导体器件与耗能电阻；所述直流电容支路包括直流电容。

Description

一种直流耗能装置及其控制方法 技术领域
本申请涉及大功率电力电子变流技术领域，具体涉及一种直流耗能装置及其控制方法。
背景技术
在高压直流输电系统中，直流耗能装置是至关重要的设备。直流耗能装置主要应用于孤岛供电的应用场景，如果发电端为与风电类似的惯性电源，当受电端发生故障时，由于功率无法送出，将在直流侧累积能量，造成直流输电线路的电压升高，对设备的安全运行造成危害。
现有技术中目前常用的技术方案为采用功率半导体器件，如IGBT直接串联和集中的电阻方案构成，由IGBT阀串承受高压，集中电阻消耗能量，该方案工作时所有IGBT同时导通，对器件开通和关断的一致性要求极高，一旦出现不一致，会导致部分阀段过压烧毁，由于工作时会不断的开通关断，装置损坏的风险很高。
也有技术方案提出模块化方案，但方案存在器件数量多，成本高，可靠性低的缺陷。如专利CN102132484B-具有分布式制动电阻的变换器中提出的解决方案，主要存在的缺陷在于：由二极管构成的桥臂电位复杂：其中二极管桥臂的上管与邻近模块连接，电容无法对其起到钳位作用。而在装置运行时，由于运行方式复杂，在模块之间工作不同步时，模块之间的电位不确定，该二极管存在过压击穿的风险。同时，该方案中器件数量较多，共包含4组功率半导体器件，功率半导体器件可靠性相对较低，使整个模块的故障率更高，且成本较高。该方案在一个模块中包含了两个由功率半导体器件构成的桥臂，桥臂之间存在电位连接，增加了结构设计的难度。
发明内容
本申请一实施例提供了一种直流耗能装置，其特征在于，所述直流耗能装置包括至少一个能耗单元，所述能耗单元包括同方向串联连接的至少两个均压耗能模块；所述均压耗能模块包括并联连接的直流电容支路、耗能支路，所述耗能支路包括串联连接的第一功率半导体器件与耗能电阻；所述直流电容支路包括直流电容。
进一步地，所述直流电容支路还包括：限流电阻或限流电感或熔断器，与所述直流电容串联连接。
进一步地，所述直流耗能装置还包括至少一个单向导通单元，所述单向导通单元包括同方向串联连接的至少两个第二功率半导体器件，所述单向导通单元与所述能耗单元串联连接。
进一步地，所述直流耗能装置还包括至少一个充电单元，与所述能耗单元串联连接， 所述充电单元包括并联连接的充电电阻和充电开关。
进一步地，所述直流耗能装置还包括至少一个隔断开关，所述割断开关与所述能耗单元串联连接。
进一步地，所述直流耗能装置还包括至少一个第三功率半导体器件，所述第三功率半导体器件与所述均压耗能模块并联连接，所述第三功率半导体器件主动导通或被动击穿时，将所述均压耗能模块旁路。
进一步地，所述均压耗能模块还包括均压电阻，与所述直流电容支路并联连接。
进一步地，所述均压耗能模块还包括第一旁路开关，与所述直流电容支路并联连接，所述第一旁路开关包括机械开关或由功率半导体器件构成的固态开关。
进一步地，所述均压耗能模块还包括第二旁路支路，与所述直流电容支路并联连接，所述第二旁路支路包括串联连接的第二旁路开关与第一放电电阻，所述第二旁路开关包括机械开关或由功率半导体器件构成的固态开关。
进一步地，所述第一旁路支路还包括第三旁路开关，与所述第一功率半导体器件并联连接，所述第三旁路开关包括机械开关或由功率半导体器件构成的固态开关。
进一步地，所述单向导通单元并联一个非线性电阻。
进一步地，所述第一功率半导体器件还反并联至少一个二极管。
进一步地，所述耗能电阻还并联至少一个二极管。
进一步地，所述第二功率半导体器件为二极管或半控型功率半导体器件或全控性功率半导体器件。
进一步地，所述第一功率半导体器件为全控性功率半导体器件。
本申请实施例还提供了一种直流耗能装置的控制方法，其特征在于，所述方法包括：关断所有均压耗能模块的耗能支路的第一功率半导体器件；利用各个直流电容和选择性导通第一功率半导体器件来均衡各个均压耗能模块的电压。
进一步地，所述关断所有均压耗能模块的耗能支路的第一功率半导体器件之后，还包括：导通直流耗能装置的所有单向导通单元的第二功率半导体器件。
进一步地，装置启动时，利用充电单元给装置充电，所述关断所有均压耗能模块的耗能支路的第一功率半导体器件之后，还包括：断开充电开关，通过充电电阻向所述均压耗能模块的所述直流电容充电；充电完成后，闭合所述充电开关，将所述充电电阻旁路。
进一步地，所述利用各个直流电容和选择性导通第一功率半导体器件来均衡各个均压耗能模块的电压，包括：所述直流耗能装置两端的直流电压上升超过第一阈值时，按一定规律导通部分所述第一功率半导体器件，直至所述直流电压恢复正常值后关断所有所述第一功率半导体器件；所述直流电压上升超过第二阈值时，导通所有所述第一功率半导体器件，直至所述直流电压恢复正常值后关断所有所述第一功率半导体器件。
进一步地，所述方法还包括：检测到均压耗能模块发生故障时，关断所述均压耗能模块的耗能支路的第一功率半导体器件；闭合与所述均压耗能模块并联连接的第二旁路开关，所述直流电容通过第二旁路支路的第一放电电阻放电；检测到所述直流电容的电 压低于放电安全值后，闭合与所述均压耗能模块并联连接的第一旁路开关。
进一步地，所述方法还包括：检测到均压耗能模块发生故障时，关断所述均压耗能模块的耗能支路的第一功率半导体器件；闭合与所述第一功率半导体器件并联连接的第三旁路开关，所述直流电容通过耗能电阻放电；检测到所述直流电容的电压低于放电安全值后，闭合与所述均压耗能模块并联连接的第一旁路开关。
进一步地，所述方法还包括：检测到均压耗能模块发生故障时，所述直流电容的电压低于放电安全值时，闭合与所述均压耗能模块并联连接的第一旁路开关。
进一步地，所述方法还包括：检测到均压耗能模块发生故障时，导通与所述均压耗能模块并联连接的第三功率半导体器件，将所述均压耗能模块旁路。
本申请实施例提供的技术方案，单向导通单元集中布置，便于监视和管理，直流电容共同承受线路电压，降低了均压耗能模块中功率半导体器件承受过电压的风险，且电容具有换成作用，对电压的上升和下降的速率起到一定的控制作用，当直流线路电压升高时，可以通过控制第一功率半导体器件控制耗能电阻的投退，以稳定直流电压，装置性价比高，可靠性高，易于实现。
附图说明
为了更清楚地说明本申请实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本申请的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1是本申请一实施例提供的一种直流耗能装置的拓扑结构图；
图2是本申请另一实施例提供的一种直流耗能装置的拓扑结构图；
图3是本申请又一实施例提供的一种直流耗能装置的拓扑结构图；
图4是本申请再一实施例提供的一种直流耗能装置的拓扑结构图；
图5是本申请另又一实施例提供的一种直流耗能装置的拓扑结构图；
图6是本申请另再一实施例提供的一种直流耗能装置的拓扑结构图；
图7是本申请一实施例提供的一种均压耗能模块的组成示意图；
图8是本申请另一实施例提供的一种均压耗能模块的组成示意图；
图9是本申请又一实施例提供的一种均压耗能模块的组成示意图；
图10是本申请再一实施例提供的一种均压耗能模块的组成示意图；
图11是本申请一实施例提供的一种直流耗能装置的控制方法流程示意图；
图12是本申请另一实施例提供的一种直流耗能装置的控制方法流程示意图；
图13是本申请又一实施例提供的一种直流耗能装置的控制方法流程示意图；
图14是本申请再一实施例提供的一种直流耗能装置的控制方法流程示意图；
图15是本申请又另一实施例提供的一种直流耗能装置的控制方法流程示意图；
图16是本申请又再一实施例提供的一种直流耗能装置的控制方法流程示意图；
图17是本申请再另一实施例提供的一种直流耗能装置的控制方法流程示意图；
图18是本申请再再一实施例提供的一种直流耗能装置的控制方法流程示意图。
具体实施方式
为使本申请实施例的目的、技术方案和优点更加清楚，以下将结合附图和实施例，对本申请技术方案的具体实施方式进行更加详细、清楚的说明。然而，以下描述的具体实施方式和实施例仅是说明的目的，而不是对本申请的限制。其只是包含了本申请一部分实施例，而不是全部的实施例，本领域技术人员对于本申请的各种变化获得的其他实施例，都属于本申请保护的范围。
应该理解的是，虽然第一、第二、第三等用语可使用于本文中用来描述各种元件或组件，但这些元件或组件不应被这些用语所限制。这些用语仅用以区分一个元件或组件与另一元件或组件。因此，下述讨论之第一元件或组件，在不脱离本申请之内容下，可被称为第二元件或第二组件。
图1是本申请一实施例提供的一种直流耗能装置的拓扑结构图，直流耗能装置1包括至少一个能耗单元。直流耗能装置并联在中、高压直流线路之间，一端连接直流线路高电位电极，另一端连接直流线路低电位电极。
能耗单元包括同方向串联连接的至少两个均压耗能模块2。均压耗能模块2包括并联连接的直流电容支路、耗能支路。耗能支路包括串联连接的第一功率半导体器件5与耗能电阻6。直流电容支路包括直流电容4。在本实施例中，第一功率半导体器件5为全控性功率半导体器件。
作为一种可选择的方案，第一功率半导体器件5还可以反并联至少一个二极管。耗能电阻6还可以并联至少一个二极管。均压耗能模块2中包含第一功率半导体器件5，通常为带有反并联二极管的IGBT，耗能电阻6两端并联二极管，均压耗能模块2中的功率半导体器件所在支路是直接串联的，该串联支路仅包含功率半导体器件，且包含了所有的功率半导体器件，在结构设计时可以压装在一起，大大减小了装置的体积，同时有利于保证器件工作的一致性，并使器件之间的等效电感值减小
本申请实施例提供的技术方案，利用均压耗能模块将装置拆分成各个子模块，每个模块均包含直流电容和限流电阻，直流电容、限流电阻共同承受线路电压，降低了均压耗能模块中功率半导体器件承受过电压的风险，且电容具有换成作用，对电压的上升和下降的速率起到一定的控制作用，当直流线路电压升高时，可以通过控制第一功率半导体器件控制耗能电阻的投退，以稳定直流电压，装置性价比高，可靠性高，易于实现。
图2是本申请另一实施例提供的一种直流耗能装置的拓扑结构图，直流耗能装置1包括至少一个能耗单元。
能耗单元包括同方向串联连接的至少两个均压耗能模块2。均压耗能模块2包括并联连接的直流电容支路、耗能支路。耗能支路包括串联连接的第一功率半导体器件5与耗能电阻6。直流电容支路包括直流电容4以及与直流电容4串联连接的限流电阻18。 限流电阻18可以用限流电感或熔断器代替，并不以此为限。第一功率半导体器件5为全控性功率半导体器件。作为一种可选择的方案，第一功率半导体器件5还可以反并联至少一个二极管。耗能电阻6还可以并联至少一个二极管。
本申请实施例提供的技术方案，单向导通单元集中布置，构成一个二极管阀串，便于监视和管理，避免直流线路短路时，电容器组向故障点放电，起到了保护隔离的作用。
如图2所示，本申请又一个实施例还如下所述。直流耗能装置1包括至少一个能耗单元、至少一个单向导通单元、至少一个充电单元、至少一个隔断开关14。
能耗单元包括同方向串联连接的至少两个均压耗能模块2。单向导通单元包括同方向串联连接的至少两个第二功率半导体器件3。单向导通单元与能耗单元串联连接。均压耗能模块3包括并联连接的直流电容支路、耗能支路。耗能支路包括串联连接的第一功率半导体器件5与耗能电阻6。直流电容支路包括直流电容4。限流电阻18可以用限流电感或熔断器代替，并不以此为限。第二功率半导体器件3与第一功率半导体器件5按照允许流过的电流方向同方向布置。充电单元与能耗单元以及单向导通单元串联连接，充电单元包括并联连接的充电电阻13和充电开关12。隔断开关14与能耗单元以及单向导通单元串联连接。在本实施例中，第二功率半导体器件3包括二极管或半控型功率半导体器件或全控性功率半导体器件。第一功率半导体器件5为全控性功率半导体器件。作为一种可选择的方案，第一功率半导体器件5还可以反并联至少一个二极管。耗能电阻6还可以并联至少一个二极管。
如图2所示，本申请再一个实施例还如下所述。直流耗能装置1包括至少一个能耗单元、至少一个单向导通单元、至少一个充电单元、至少一个隔断开关14、至少一个第三功率半导体器件17。
能耗单元包括同方向串联连接的至少两个均压耗能模块2。单向导通单元包括同方向串联连接的至少两个第二功率半导体器件3。单向导通单元与能耗单元串联连接。均压耗能模块2包括并联连接的直流电容支路、耗能支路。耗能支路包括串联连接的第一功率半导体器件5与耗能电阻6。直流电容支路包括直流电容4以及与直流电容4串联连接的限流电阻18。限流电阻18可以用限流电感或熔断器代替，并不以此为限。第二功率半导体器件3与第一功率半导体器件5按照允许流过的电流方向同方向布置。充电单元与能耗单元以及单向导通单元串联连接，充电单元包括并联连接的充电电阻13和充电开关12。隔断开关14与能耗单元以及单向导通单元串联连接。第三功率半导体器件17与均压耗能模块2并联连接，第三功率半导体器件17主动导通或被动击穿时，将均压耗能模块2旁路。在本实施例中，第二功率半导体器件3包括二极管或半控型功率半导体器件或全控性功率半导体器件。第一功率半导体器件5为全控性功率半导体器件。作为一种可选择的方案，第一功率半导体器件5还可以反并联至少一个二极管。耗能电阻6还可以并联至少一个二极管。
图3是本申请再另一实施例提供的一种直流耗能装置的拓扑结构图，直流耗能装置1包括至少一个能耗单元、至少一个单向导通单元、至少一个充电单元、至少一个隔断开关14、至少一个第三功率半导体器件17。
能耗单元包括同方向串联连接的至少两个均压耗能模块2。单向导通单元包括同方向串联连接的至少两个第二功率半导体器件3。单向导通单元与能耗单元串联连接。均压耗能模块2包括并联连接的直流电容支路、耗能支路、均压电阻11。耗能支路包括串联连接的第一功率半导体器件5与耗能电阻6，均压电阻11与直流电容支路并联连接。 耗能支路包括串联连接的第一功率半导体器件5与耗能电阻6。直流电容支路包括直流电容4。第二功率半导体器件3与第一功率半导体器件5按照允许流过的电流方向同方向布置。充电单元与能耗单元以及单向导通单元串联连接，充电单元包括并联连接的充电电阻13和充电开关12。隔断开关14与能耗单元以及单向导通单元串联连接。第三功率半导体器件17与均压耗能模块2并联连接，第三功率半导体器件17主动导通或被动击穿时，将均压耗能模块2旁路。在本实施例中，第二功率半导体器件3包括二极管或半控型功率半导体器件或全控性功率半导体器件。第一功率半导体器件5为全控性功率半导体器件。作为一种可选择的方案，第一功率半导体器件5还可以反并联至少一个二极管。耗能电阻6还可以并联至少一个二极管。
如图3所示，本申请又一个实施例还如下述。直流耗能装置1包括至少一个能耗单元、至少一个单向导通单元、至少一个充电单元、至少一个隔断开关14、至少一个第三功率半导体器件17、至少一个非线性电阻15，非线性电阻15与单向导通单元并列连接。
能耗单元包括同方向串联连接的至少两个均压耗能模块2。单向导通单元包括同方向串联连接的至少两个第二功率半导体器件11。单向导通单元并联一个非线性电阻15后与能耗单元串联连接。均压耗能模块2包括并联连接的直流电容支路、耗能支路、均压电阻11。耗能支路包括串联连接的第一功率半导体器件5与耗能电阻6，均压电阻11与直流电容支路并联连接。耗能支路包括串联连接的第一功率半导体器件5与耗能电阻6。直流电容支路包括直流电容4。第二功率半导体器件3与第一功率半导体器件5按照允许流过的电流方向同方向布置。充电单元与能耗单元以及单向导通单元串联连接，充电单元包括并联连接的充电电阻13和充电开关12。隔断开关14与能耗单元以及单向导通单元串联连接。第三功率半导体器件17与均压耗能模块2并联连接，第三功率半导体器件17主动导通或被动击穿时，将均压耗能模块2旁路。在本实施例中，第二功率半导体器件3包括二极管或半控型功率半导体器件或全控性功率半导体器件。第一功率半导体器件5为全控性功率半导体器件。作为一种可选择的方案，第一功率半导体器件5还可以反并联至少一个二极管。耗能电阻6还可以并联至少一个二极管。
本申请实施例提供的技术方案，单向导通单元两端并联非线性电阻，避免了二极管阀段承受过电压，集中保护，整体数量上与传统方案相比也会减少。
图4是本申请再一实施例提供的一种直流耗能装置的拓扑结构图，直流耗能装置1包括至少一个能耗单元、至少一个单向导通单元、至少一个充电单元、至少一个隔断开关14、至少一个非线性电阻15。
能耗单元包括同方向串联连接的至少两个均压耗能模块2。单向导通单元包括同方向串联连接的至少两个第二功率半导体器件11。单向导通单元并联一个非线性电阻15后与能耗单元串联连接。均压耗能模块2包括并联连接的直流电容支路、耗能支路、均压电阻11、第一旁路开关10。直流电容支路包括直流电容4。耗能支路包括串联连接的第一功率半导体器件5与耗能电阻6，均压电阻11与直流电容支路并联连接。第一旁路开关10与直流电容支路并联连接。第二功率半导体器件3与第一功率半导体器件5按照允许流过的电流方向同方向布置。充电单元与能耗单元以及单向导通单元串联连接，充电单元包括并联连接的充电电阻13和充电开关12。隔断开关14与能耗单元以及单向导通单元串联连接。第三功率半导体器件17与均压耗能模块2并联连接，第三功率半导体器件17主动导通或被动击穿时，将均压耗能模块2旁路。
也就是说，直流耗能装置1包括至少两个均压耗能模块2以及至少两个第二功率半 导体器件3，至少两个均压耗能模块同方向串联构成至少一个能耗单元，至少两个第二功率半导体器件3同方向串联构成至少一个单向导通单元，单向导通单元与能耗单元串联连接。均压耗能模块2包括直流电容支路、耗能支路、第一旁路开关10，直流电容、耗能支路、第一旁路开关10并联连接，耗能支路由第一功率半导体器件5与耗能电阻6串联连接构成。在本实施例中，第二功率半导体器件3包括二极管或半控型功率半导体器件或全控性功率半导体器件。第一功率半导体器件5为全控性功率半导体器件。第一功率半导体器件5反并联了一个二极管。耗能电阻6并联了一个二极管7。
本申请实施例提供的技术方案，均压耗能模块严重故障时，通过第一旁路开关直接旁路，可及时实现耗能装置的在线投退，阻止故障的扩散及延续。
如图4所示，本申请又再一个实施例还如下所述。直流耗能装置1包括至少一个能耗单元、至少一个单向导通单元、至少一个充电单元、至少一个隔断开关14、至少一个非线性电阻15。
能耗单元包括同方向串联连接的至少两个均压耗能模块2。单向导通单元包括同方向串联连接的至少两个第二功率半导体器件11。单向导通单元并联一个非线性电阻15后与能耗单元串联连接。均压耗能模块2包括并联连接的直流电容支路、耗能支路、均压电阻11、第一旁路开关10、第二旁路支路。耗能支路包括串联连接的第一功率半导体器件5与耗能电阻6，均压电阻11与直流电容支路并联连接。直流电容支路包括直流电容4。第一旁路开关10与直流电容支路并联连接。第二旁路支路与直流电容支路和第一旁路开关10并联连接，第二旁路支路包括串联连接的第二旁路开关8与第一放电电阻9。第二功率半导体器件3与第一功率半导体器件5按照允许流过的电流方向同方向布置。充电单元与能耗单元以及单向导通单元串联连接，充电单元包括并联连接的充电电阻13和充电开关12。隔断开关14与能耗单元以及单向导通单元串联连接。第三功率半导体器件17与均压耗能模块2并联连接，第三功率半导体器件17主动导通或被动击穿时，将均压耗能模块2旁路。在本实施例中，第二功率半导体器件3包括二极管或半控型功率半导体器件或全控性功率半导体器件。第一功率半导体器件5为全控性功率半导体器件。第一功率半导体器件5反并联了一个二极管。耗能电阻6并联了一个二极管7。
本申请实施例提供的技术方案，在模块发生故障时，如当IGBT开路故障时，此时均压耗能模块无法起到耗能作用，不会有严重后果，先闭合第二旁路支路，将直流电容电压上储存的能量释放掉，等待直流电压低于安全放电电压再闭合第一旁路开关，避免了直接闭合第一旁路开关造成直流电容突然短路，影响直流电容的寿命，在一些严重故障情况下，如当IGBT短路故障时，此时均压耗能模块的电阻一直投入到回路中，直流电压被迅速拉低，持续时间久电阻会损坏，也可以直接闭合第一旁路开关，通过双重旁路的方式，极大的提高了旁路的可靠性。
图5是本申请另又一实施例提供的一种直流耗能装置的拓扑结构图，直流耗能装置1包括至少一个能耗单元、至少一个单向导通单元、至少一个充电单元、至少一个隔断开关14、至少一个非线性电阻15。
能耗单元包括同方向串联连接的至少两个均压耗能模块2。单向导通单元包括同方向串联连接的至少两个第二功率半导体器件11。单向导通单元并联一个非线性电阻15后与能耗单元串联连接。均压耗能模块2包括并联连接的直流电容支路、耗能支路、均压电阻11、第一旁路开关10、第三旁路开关16。耗能支路包括串联连接的第一功率半导体器件5与耗能电阻6，均压电阻11与直流电容4并联连接。直流电容支路包括直流 电容4。第一旁路开关10与直流电容支路并联连接。第三旁路开关16与第一功率半导体器件5并联连接。第二功率半导体器件3与第一功率半导体器件5按照允许流过的电流方向同方向布置。充电单元与能耗单元以及单向导通单元串联连接，充电单元包括并联连接的充电电阻13和充电开关12。隔断开关14与能耗单元以及单向导通单元串联连接。在本实施例中，第二功率半导体器件3包括二极管或半控型功率半导体器件或全控性功率半导体器件。第一功率半导体器件5为全控性功率半导体器件。第一功率半导体器件5反并联了一个二极管。耗能电阻6并联了一个二极管7。
本申请实施例提供的技术方案，在模块发生故障时，先闭合第三旁路开关，等待直流电压低于安全放电电压再闭合第一旁路开关，避免了直接闭合第一旁路开关造成直流电容突然短路，影响直流电容的寿命，在一些严重故障情况下，也可以直接闭合第一旁路开关，进一步通过双重旁路的方式，极大的提高了旁路的可靠性。
图6是本申请另再一实施例提供的一种直流耗能装置的拓扑结构图，直流耗能装置1包括至少一个能耗单元、至少一个单向导通单元、至少一个充电单元、至少一个隔断开关14、至少一个非线性电阻15。
能耗单元包括同方向串联连接的至少两个均压耗能模块2。单向导通单元包括同方向串联连接的至少两个第二功率半导体器件11。单向导通单元并联一个非线性电阻15后与能耗单元串联连接。均压耗能模块2包括并联连接的直流电容支路、耗能支路、均压电阻11、第三功率半导体器件17、第三旁路开关16。耗能支路包括串联连接的第一功率半导体器件5与耗能电阻6，均压电阻11与直流电容支路并联连接。第三功率半导体器件17与直流电容支路并联连接。直流电容支路包括直流电容4。第三旁路开关16与第一功率半导体器件5并联连接。第二功率半导体器件3与第一功率半导体器件5按照允许流过的电流方向同方向布置。充电单元与能耗单元以及单向导通单元串联连接，充电单元包括并联连接的充电电阻13和充电开关12。隔断开关14与能耗单元以及单向导通单元串联连接。第三功率半导体器件17与均压耗能模块2并联连接，第三功率半导体器件17主动导通或被动击穿时，将均压耗能模块2旁路。在本实施例中，第二功率半导体器件3包括二极管或半控型功率半导体器件或全控性功率半导体器件。第一功率半导体器件5为全控性功率半导体器件。第一功率半导体器件5反并联了一个二极管。耗能电阻6并联了一个二极管7。
本申请实施例提供的技术方案，在模块发生故障时，先闭合第三旁路开关，在一些严重故障情况下，也可以采用第三功率半导体器件旁路方式，直接导通晶闸管或过压击穿第三功率半导体器件将模块旁路，及时旁路均压耗能模块，极大的提高了旁路的可靠性。
图7是本申请一实施例提供的一种均压耗能模块的组成示意图，均压耗能模块2包括并联连接的直流电容4、耗能支路、均压电阻11。
耗能支路包括串联连接的第一功率半导体器件5与耗能电阻6，均压电阻11与直流电容4并联连接。
图8是本申请另一实施例提供的一种均压耗能模块的组成示意图，均压耗能模块2包括并联连接的直流电容支路、耗能支路、均压电阻11、第一旁路开关10。
耗能支路包括串联连接的第一功率半导体器件5与耗能电阻6，均压电阻11与直流电容支路并联连接。第一旁路开关10与直流电容支路并联连接。第一旁路开关10包括机械开关或由功率半导体器件构成的固态开关。直流电容支路包括直流电容4。
如图8所示，本申请又一个实施例还如下所述。均压耗能模块2包括并联连接的直流电容支路、耗能支路、均压电阻11、第一旁路开关10、第二旁路支路。
耗能支路包括串联连接的第一功率半导体器件5与耗能电阻6，均压电阻11与直流电容支路并联连接。第一旁路开关10与直流电容支路并联连接。直流电容支路包括直流电容4以及与直流电容4串联连接的限流电阻18。限流电阻18可以用限流电感或熔断器代替，并不以此为限。第二旁路支路与直流电容支路并联连接，第二旁路支路包括串联连接的第二旁路开关8与第一放电电阻9。第二旁路开关8包括机械开关或由功率半导体器件构成的固态开关。如图8所示，第一功率半导体器件5还可以反并联至少一个二极管。耗能电阻6还可以并联至少一个二极管7。
本申请实施例提供的技术方案，第一功率半导体器件，通常为带有反并联二极管的IGBT，耗能电阻两端并联二极管，均压耗能模块中的功率半导体器件所在支路是直接串联的，该串联支路仅包含功率半导体器件，且包含了所有的功率半导体器件，在结构设计时可以压装在一起，大大减小了装置的体积，同时有利于保证器件工作的一致性，并使器件之间的等效电感值减小。
图9是本申请又一实施例提供的一种均压耗能模块的组成示意图，均压耗能模块2包括并联连接的直流电容支路、耗能支路、均压电阻11、第一旁路开关10、第二旁路支路、第三旁路开关16。
耗能支路包括串联连接的第一功率半导体器件5与耗能电阻6，均压电阻11与直流电容支路并联连接。直流电容支路包括直流电容4。第一旁路开关10与直流电容支路并联连接。第二旁路支路与直流电容支路并联连接，第二旁路支路包括串联连接的第二旁路开关8与第一放电电阻9。第三旁路开关16与第一功率半导体器件5并联连接。第三旁路开关16包括机械开关或由功率半导体器件构成的固态开关。如图9所示，第一功率半导体器件5还可以反并联至少一个二极管。耗能电阻6还可以并联至少一个二极管7。
图10是本申请再一实施例提供的一种均压耗能模块的组成示意图，均压耗能模块2包括并联连接的直流电容支路、耗能支路、均压电阻11、第三旁路开关16，均压耗能模块2还并联一个第三功率半导体器件。
耗能支路包括串联连接的第一功率半导体器件5与耗能电阻6，均压电阻11与直流电容支路并联连接。直流电容支路包括直流电容4。第三旁路开关16与第一功率半导体器件5并联连接。第三旁路开关16包括机械开关或由功率半导体器件构成的固态开关。第三功率半导体器件17与均压耗能模块2并联连接，第三功率半导体器件17主动导通或被动击穿时，将均压耗能模块2旁路。如图10所示，第一功率半导体器件5还可以反并联至少一个二极管。耗能电阻6还可以并联至少一个二极管7。
上述实施例的均压耗能模块可以根据实际需要配置在直流耗能装置中。
图11是本申请一实施例提供的一种直流耗能装置的控制方法流程示意图，包括以下步骤。
在步骤S110中，关断所有均压耗能模块的耗能支路的第一功率半导体器件。
装置启动时，均压耗能模块中的第一功率半导体器件关断。
在步骤S130中，利用各个直流电容和选择性导通第一功率半导体器件来均衡各个均压耗能模块的电压。
随着线路直流电压上升，装置两端的直流电压同时上升，利用均压耗能模块均衡各个均压耗能模块中电容的电压。
采用上述方法，直流耗能装置可以与临近的换流器共用充电回路，直流耗能装置中的直流电容与换流器子模块的电容同时充电。
图12是本申请另一实施例提供的一种直流耗能装置的控制方法流程示意图，装置启动时，包括以下步骤。
在步骤S110中，关断所有均压耗能模块的耗能支路的第一功率半导体器件，此时充电开关断开，隔断开关断开。
在步骤S120中，导通直流耗能装置的所有单向导通单元的第二功率半导体器件。具体而言，在其他的实施例中，如果没有单向导通单元，则不用导通第二功率半导体器件。
在步骤S130中，利用各个直流电容和选择性导通第一功率半导体器件来均衡各个均压耗能模块的电压。也就是说，利用耗能支路均衡各个均压耗能模块中电容的电压。
图13是本申请又一实施例提供的一种直流耗能装置的控制方法流程示意图，装置启动时，利用充电单元给装置充电，包括以下步骤。
在步骤S110中，关断所有均压耗能模块的耗能支路的第一功率半导体器件，此时充电开关断开，隔断开关断开。
在步骤S121中，直流线路带电后，闭合隔断开关，通过充电电阻向均压耗能模块的直流电容充电。
在步骤S122中，充电完成后，闭合充电开关，将充电电阻旁路。
在步骤S130中，利用各个直流电容和选择性导通第一功率半导体器件来均衡各个均压耗能模块的电压。也就是说，利用耗能支路均衡各个均压耗能模块中电容的电压。
图14是本申请再一实施例提供的一种直流耗能装置的控制方法流程示意图，包括以下步骤。
在步骤S110中，关断所有均压耗能模块的耗能支路的第一功率半导体器件。
当与装置连接的直流线路正常运行时，均压耗能模块中的第一功率半导体器件处于关断状态。
在步骤S120中，导通直流耗能装置的所有单向导通单元的第二功率半导体器件。
此时，隔断开关与充电开关闭合。
在步骤S131中，当直流线路过压时，直流耗能装置两端的直流电压上升超过第一阈值时，按一定规律导通部分第一功率半导体器件，直至直流电压恢复正常值后关断所有第一功率半导体器件。
在本实施例中，当直流线路过压时，进入耗能模式。正常值为400kV，设定电压控制目标的第一阈值为420kV，第二阈值为440kV。
在耗能模式下，当检测到直流线路电压超过420kV时，按一定规律导通部分均压耗能模块中的第一功率半导体器件。此时由于电阻的投入，能量被消耗，直流电压值的变化取决于能量积累的速度和消耗的速度。
当能量的消耗速度大于积累速度时，检测到直流电压恢复到400kV及以下，关断均压耗能模块中的第一功率半导体器件。
在步骤S132中，直流电压上升超过第二阈值时，导通所有第一功率半导体器件，直至直流电压恢复正常值后关断所有第一功率半导体器件。
如果积累的能量速度大于消耗的速度，直流电压继续上升，直流电压超过了440kV，此时，同时导通所有均压耗能模块中的第一功率半导体器件，以最大的耗能能力释放直流侧累积能量。
直至直流线路电压恢复正常值400kV，关断均压耗能模块中的第一功率半导体器件。
当均压耗能模块发生故障时，包含多种旁路方法。
图15是本申请又另一实施例提供的一种直流耗能装置的控制方法流程示意图，包括以下步骤。
在步骤S110中，关断所有均压耗能模块的耗能支路的第一功率半导体器件。
在步骤S120中，导通直流耗能装置的所有单向导通单元的第二功率半导体器件。
在步骤S130中，利用各个直流电容和选择性导通第一功率半导体器件来均衡各个均压耗能模块的电压。
在步骤S140中，检测到均压耗能模块发生故障时，关断均压耗能模块的耗能支路的第一功率半导体器件。
在步骤S150中，闭合与均压耗能模块并联连接的第二旁路开关，直流电容通过第二旁路支路的第一放电电阻放电。
在步骤S160中，检测到直流电容的电压低于放电安全值后，闭合与均压耗能模块并联连接的第一旁路开关。
本申请实施例提供的技术方案，在模块发生故障时，先闭合第二旁路开关，将直流电容电压上储存的能量释放掉，等待直流电压低于安全放电电压再闭合第一旁路支路的旁路开关，避免了直接闭合第一旁路开关造成直流电容突然短路，影响直流电容的寿命。
图16是本申请又再一实施例提供的一种直流耗能装置的控制方法流程示意图，包括以下步骤。
在步骤S110中，关断所有均压耗能模块的耗能支路的第一功率半导体器件。
在步骤S120中，导通直流耗能装置的所有单向导通单元的第二功率半导体器件。
在步骤S130中，利用各个直流电容和选择性导通第一功率半导体器件来均衡各个均压耗能模块的电压。
在步骤S140中，检测到均压耗能模块发生故障时，关断均压耗能模块的耗能支路的第一功率半导体器件。
在步骤S141中，闭合与第一功率半导体器件并联连接的第三旁路开关，直流电容通过耗能电阻放电。
在步骤S160中，检测到直流电容的电压低于放电安全值后，闭合与均压耗能模块并联连接的第一旁路开关。
在此需要特别指出的是，如果装置包含第三旁路开关且包含第一旁路开关时，执行如上步骤。如果装置包含第三旁路开关且不包含第一旁路开关时，没有步骤S160，那么直流电容通过均压耗能模块的耗能电阻放电，耗能电阻配置冷却系统，可以长时间的流过电流。
本申请实施例提供的技术方案，在模块发生故障时，先闭合第三旁路开关，将直流电容电压上储存的能量释放掉，将耗能电阻用作放电电阻，可节约成本，提高设备利用率，同时，第三旁路开关可以为机械开关或固态开关，可作为第一功率半导体器件的后备和冗余，等待直流电压低于安全放电电压再闭合第一旁路支路的旁路开关，避免了直接闭合第一旁路开关造成直流电容突然短路，影响直流电容的寿命。
图17是本申请再另一实施例提供的一种直流耗能装置的控制方法流程示意图，包括以下步骤。
在步骤S110中，关断所有均压耗能模块的耗能支路的第一功率半导体器件。
在步骤S120中，导通直流耗能装置的所有单向导通单元的第二功率半导体器件。
在步骤S130中，利用各个直流电容和选择性导通第一功率半导体器件来均衡各个均压耗能模块的电压。
在步骤S170中，检测到均压耗能模块发生故障时，直流电容的电压低于放电安全值时，闭合与均压耗能模块并联连接的第一旁路开关。
本申请实施例提供的技术方案，在一些严重故障情况下，也可以直接闭合第一旁路开关，及时旁路均压耗能模块，进一步提高了旁路的可靠性。
图18是本申请再再一实施例提供的一种直流耗能装置的控制方法流程示意图，包括以下步骤。
在步骤S110中，关断所有均压耗能模块的耗能支路的第一功率半导体器件。
在步骤S120中，导通直流耗能装置的所有单向导通单元的第二功率半导体器件。
在步骤S130中，利用各个直流电容和选择性导通第一功率半导体器件来均衡各个均压耗能模块的电压。
在步骤S180中，检测到均压耗能模块发生故障时，导通与该均压耗能模块并联连接的第三功率半导体器件，将该均压耗能模块旁路。第三功率半导体器件包括但不限于晶闸管。
本申请实施例提供的技术方案，在一些严重故障情况下，也可以采用第三功率半导体器件旁路方式，直接导通晶闸管或过压击穿第三功率半导体器件将模块旁路，及时旁路均压耗能模块，极大的提高了旁路的可靠性。
需要说明的是，以上参照附图所描述的各个实施例仅用以说明本申请而非限制本申请的范围，本领域的普通技术人员应当理解，在不脱离本申请的精神和范围的前提下对本申请进行的修改或者等同替换，均应涵盖在本申请的范围之内。此外，除上下文另有所指外，以单数形式出现的词包括复数形式，反之亦然。另外，除非特别说明，那么任何实施例的全部或一部分可结合任何其它实施例的全部或一部分来使用。

Claims (23)

  1. 一种直流耗能装置，其特征在于，所述直流耗能装置包括：
    至少一个能耗单元，包括同方向串联连接的至少两个均压耗能模块；
    所述均压耗能模块包括并联连接的直流电容支路、耗能支路，所述耗能支路包括串联连接的第一功率半导体器件与耗能电阻；所述直流电容支路包括直流电容。
  2. 根据权利要求1所述的直流耗能装置，其特征在于，所述直流电容支路还包括：
    限流电阻或限流电感或熔断器，与所述直流电容串联连接。
  3. 根据权利要求1所述的直流耗能装置，其特征在于，所述直流耗能装置还包括：
    至少一个单向导通单元，包括同方向串联连接的至少两个第二功率半导体器件，所述单向导通单元与所述能耗单元串联连接。
  4. 根据权利要求1所述的直流耗能装置，其特征在于，所述直流耗能装置还包括：
    至少一个充电单元，与所述能耗单元串联连接，所述充电单元包括并联连接的充电电阻和充电开关。
  5. 根据权利要求1所述的直流耗能装置，其特征在于，所述直流耗能装置还包括：
    至少一个隔断开关，与所述能耗单元串联连接。
  6. 根据权利要求1所述的直流耗能装置，其特征在于，所述直流耗能装置还包括：
    至少一个第三功率半导体器件，与所述均压耗能模块并联连接，所述第三功率半导体器件主动导通或被动击穿时，将所述均压耗能模块旁路。
  7. 根据权利要求1所述的直流耗能装置，其特征在于，所述均压耗能模块还包括：
    均压电阻，与所述直流电容支路并联连接。
  8. 根据权利要求1所述的直流耗能装置，其特征在于，所述均压耗能模块还包括：
    第一旁路开关，与所述直流电容支路并联连接，所述第一旁路开关包括机械开关或由功率半导体器件构成的固态开关。
  9. 根据权利要求1所述的直流耗能装置，其特征在于，所述均压耗能模块还包括：
    第二旁路支路，与所述直流电容支路并联连接，所述第二旁路支路包括串联连接的第二旁路开关与第一放电电阻，所述第二旁路开关包括机械开关或由功率半导体器件构成的固态开关。
  10. 根据权利要求1所述的直流耗能装置，其特征在于，所述第一旁路支路还包括：
    第三旁路开关，与所述第一功率半导体器件并联连接，所述第三旁路开关包括机械开关或由功率半导体器件构成的固态开关。
  11. 根据权利要求3所述的直流耗能装置，其特征在于，所述单向导通单元并联一个非线性电阻。
  12. 根据权利要求1所述的直流耗能装置，其特征在于，所述第一功率半导体器件还反并联至少一个二极管。
  13. 根据权利要求1所述的直流耗能装置，其特征在于，所述耗能电阻还并联至少一个二极管。
  14. 根据权利要求3所述的直流耗能装置，其特征在于，所述第二功率半导体器件为二极管或半控型功率半导体器件或全控性功率半导体器件。
  15. 根据权利要求1所述的直流耗能装置，其特征在于，所述第一功率半导体器件为全控性功率半导体器件。
  16. 一种直流耗能装置的控制方法，其特征在于，所述方法包括：
    关断所有均压耗能模块的耗能支路的第一功率半导体器件；
    利用各个直流电容和选择性导通第一功率半导体器件来均衡各个均压耗能模块的电压。
  17. 根据权利要求16所述的方法，其特征在于，所述关断所有均压耗能模块的耗能支路的第一功率半导体器件之后，还包括：
    导通直流耗能装置的所有单向导通单元的第二功率半导体器件。
  18. 根据权利要求16所述的方法，其特征在于，所述关断所有均压耗能模块的耗能支路的第一功率半导体器件之后，还包括：
    断开充电开关，通过充电电阻向所述均压耗能模块的所述直流电容充电；
    充电完成后，闭合所述充电开关，将所述充电电阻旁路。
  19. 根据权利要求16所述的方法，其特征在于，所述利用各个直流电容和选择性导通第一功率半导体器件来均衡各个均压耗能模块的电压，包括：
    所述直流耗能装置两端的直流电压上升超过第一阈值时，按一定规律导通部分所述 第一功率半导体器件，直至所述直流电压恢复正常值后关断所有所述第一功率半导体器件；
    所述直流电压上升超过第二阈值时，导通所有所述第一功率半导体器件，直至所述直流电压恢复正常值后关断所有所述第一功率半导体器件。
  20. 根据权利要求16所述的方法，其特征在于，所述方法还包括：
    检测到均压耗能模块发生故障时，关断所述均压耗能模块的耗能支路的第一功率半导体器件；
    闭合与所述均压耗能模块并联连接的第二旁路开关，所述直流电容通过第二旁路支路的第一放电电阻放电；
    检测到所述直流电容的电压低于放电安全值后，闭合与所述均压耗能模块并联连接的第一旁路开关。
  21. 根据权利要求16所述的方法，其特征在于，所述方法还包括：
    检测到均压耗能模块发生故障时，关断所述均压耗能模块的耗能支路的第一功率半导体器件；
    闭合与所述第一功率半导体器件并联连接的第三旁路开关，所述直流电容通过耗能电阻放电；
    检测到所述直流电容的电压低于放电安全值后，闭合与所述均压耗能模块并联连接的第一旁路开关。
  22. 根据权利要求16所述的方法，其特征在于，所述方法还包括：
    检测到均压耗能模块发生故障时，所述直流电容的电压低于放电安全值时，闭合与所述均压耗能模块并联连接的第一旁路开关。
  23. 根据权利要求16所述的方法，其特征在于，所述方法还包括：
    检测到均压耗能模块发生故障时，导通与所述均压耗能模块并联连接的第三功率半导体器件，将所述均压耗能模块旁路。
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WO2022258141A1 (en) * 2021-06-08 2022-12-15 Hitachi Energy Switzerland Ag Energy supporting device
CN114792971A (zh) * 2022-06-22 2022-07-26 国网经济技术研究院有限公司 优化直流电压控制的分组集中式直流耗能装置和控制方法
CN117913879A (zh) * 2024-03-19 2024-04-19 国网经济技术研究院有限公司 一种模块化多电平换流器子模块设备及其使用方法

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CN109546638B (zh) 2020-07-28
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CN109921453A (zh) 2019-06-21
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