WO2020079772A1 - Photosensitive resin composition, patterned cured film and method for producing same, semiconductor device and electronic device - Google Patents

Abstract

This photosensitive resin composition contains (A) a hydroxystyrene resin, (B) a compound having a benzotriazole skeleton, (C) an elastomer and (D) a compound which generates an acid by means of light.

Description

Photosensitive resin composition, patterned cured film and method for producing the same, semiconductor element, and electronic device

The present invention relates to a photosensitive resin composition, a patterned cured film and a method for manufacturing the same, a semiconductor element, and an electronic device.

In recent years, as semiconductor elements have become highly integrated and miniaturized, insulating layers such as interlayer insulating layers and surface protective layers of semiconductor elements are required to have more excellent electrical characteristics, heat resistance, mechanical characteristics, and the like. . A photosensitive resin composition containing an alkali-soluble resin has been developed as a material for forming an insulating layer having such characteristics (see, for example, Patent Documents 1, 2 and 3). A patterned resin film (patterned resin film) is obtained by coating and drying these photosensitive resin compositions on a substrate to form a resin film, and exposing and developing the resin film. Then, the patterned resin film is heated and cured to form a patterned cured film (a patterned cured film), and the patterned cured film can be used as an insulating layer.

JP, 2008-309885, A Japanese Patent Laid-Open No. 2007-057595 International Publication No. 2010/073948

When a laminate (for example, a semiconductor element) including an insulating layer formed using a photosensitive resin composition is left at high temperature on a substrate having a copper layer, the surface of the copper layer in contact with the insulating layer is oxidized. An oxide layer may be formed and a void may be generated in the copper layer. Therefore, the cured film formed from the photosensitive resin composition is required to suppress the occurrence of voids in the copper layer.

The present invention aims to provide a photosensitive resin composition capable of forming a cured film capable of suppressing the occurrence of voids in a copper layer.

One aspect of the present invention is a photosensitive resin containing (A) a hydroxystyrene-based resin, (B) a compound having a benzotriazole skeleton, (C) an elastomer, and (D) a compound that generates an acid by light. A resin composition is provided.

The content of the compound (B) having a benzotriazole skeleton may be 0.1 to 3 parts by mass based on 100 parts by mass of the (A) hydroxystyrene resin. The (C) elastomer may be an acrylic elastomer.

In another aspect, the present invention provides a patterned cured film having a pattern, the pattern including a cured product of a resin film made of the above-mentioned photosensitive resin composition. The present invention also provides a semiconductor device including the patterned cured film as an interlayer insulating layer or a surface protective layer. The present invention further provides an electronic device including the semiconductor element.

In another aspect, the present invention provides, in another aspect, a step of forming a resin film by applying and drying the resin composition on a part or the whole surface of a substrate having a copper layer, and a step of exposing a part or the whole surface of the resin film. And a step of developing the exposed resin film with an alkaline aqueous solution to form a patterned resin film, and a step of heating the patterned resin film, to provide a method for producing a patterned cured film.

According to the present invention, it is possible to provide a photosensitive resin composition capable of forming a cured film capable of suppressing the occurrence of voids in a copper layer. Further, according to the present invention, it is possible to provide a patterned cured film produced using the photosensitive resin composition, a semiconductor element and an electronic device, and a method for producing a patterned cured film using the photosensitive resin composition. it can.

FIG. 6 is a schematic perspective view and a schematic end view illustrating an embodiment of a manufacturing process of a semiconductor device. FIG. 6 is a schematic perspective view and a schematic end view illustrating an embodiment of a manufacturing process of a semiconductor device. FIG. 6 is a schematic perspective view and a schematic end view illustrating an embodiment of a manufacturing process of a semiconductor device. FIG. 6 is a schematic perspective view and a schematic end view illustrating an embodiment of a manufacturing process of a semiconductor device. FIG. 6 is a schematic perspective view and a schematic end view illustrating an embodiment of a manufacturing process of a semiconductor device. It is a schematic sectional drawing which shows one Embodiment of a semiconductor element. It is a schematic sectional drawing which shows one Embodiment of a semiconductor element. 4 is a micrograph of the presence or absence of voids observed in Example 1. 3 is a micrograph of Comparative Example 1 showing the presence or absence of voids.

Hereinafter, embodiments of the present invention will be described in detail. However, the present invention is not limited to the following embodiments. The term "(meth) acrylic acid" used herein means "acrylic acid" or "methacrylic acid", and the same applies to other similar expressions such as (meth) acrylate.

[Photosensitive resin composition]
The photosensitive resin composition of the present embodiment includes (A) a hydroxystyrene resin (hereinafter, sometimes referred to as “(A) component”) and (B) a compound having a benzotriazole skeleton (hereinafter, “(B)”). Component (also sometimes referred to as “component”), (C) elastomer (hereinafter sometimes referred to as “(C) component”), and (D) compound that produces an acid by light (hereinafter referred to as “(D) component”). In some cases).

<(A) component>
The hydroxystyrene resin that is the component (A) is a resin that is soluble in an alkaline aqueous solution. The alkaline aqueous solution is an alkaline aqueous solution such as a tetramethylammonium hydroxide (TMAH) aqueous solution, a metal hydroxide aqueous solution, and an organic amine aqueous solution. The solubility of the component (A) in the aqueous alkaline solution can be confirmed, for example, as follows.

A varnish obtained by dissolving the component (A) in an arbitrary solvent is spin-coated on a substrate such as a silicon wafer to form a coating film having a thickness of about 5 μm. This is immersed in either an aqueous TMAH solution, an aqueous metal hydroxide solution or an aqueous organic amine solution at 20 to 25 ° C. As a result, when the coating film can be uniformly dissolved, the component (A) can be regarded as soluble in the alkaline aqueous solution.

From the viewpoint of solubility in an alkaline aqueous solution, the component (A) preferably has a structural unit represented by the following general formula (1).

In the formula (1), R ²¹ represents a hydrogen atom or a methyl group, R ²² represents an alkyl group having 1 to 10 carbon atoms, an aryl group having 6 to 10 carbon atoms or an alkoxy group having 1 to 10 carbon atoms, and Represents an integer of 0 to 3, and b represents an integer of 1 to 3. The sum of a and b is 5 or less.

Examples of the alkyl group having 1 to 10 carbon atoms represented by R ²² include methyl group, ethyl group, propyl group, butyl group, pentyl group, hexyl group, heptyl group, octyl group, nonyl group and decyl group. . These alkyl groups may be linear or branched. Examples of the aryl group having 6 to 10 carbon atoms represented by R ²² include a phenyl group and a naphthyl group. Examples of the alkoxy group having 1 to 10 carbon atoms represented by R ²² include a methoxy group, an ethoxy group, a propoxy group, a butoxy group, a pentoxy group, a hexoxy group, a heptoxy group, an octoxy group, a nonoxy group and a decoxy group. . These alkoxy groups may be linear or branched.

The hydroxystyrene-based resin can be obtained by polymerizing a monomer or the like which gives the structural unit represented by the general formula (1). Examples of the monomer giving the structural unit represented by the general formula (1) include p-hydroxystyrene, m-hydroxystyrene, o-hydroxystyrene, p-isopropenylphenol, m-isopropenylphenol and o-isopropenyl. Examples include phenol. These monomers can be used alone or in combination of two or more.

The hydroxystyrene-based resin is not limited to the production method, but for example, the hydroxyl group of the monomer giving the structural unit represented by the general formula (1) is protected by a tert-butyl group, an acetyl group or the like to protect the hydroxyl group. A monomer is obtained by polymerizing a monomer having a protected hydroxyl group, and the obtained polymer is further subjected to a known method (such as deprotection under an acid catalyst to convert it into a hydroxystyrene structural unit). It can be obtained by deprotecting with.

The hydroxystyrene-based resin may be a polymer or a copolymer consisting of only a monomer giving the structural unit represented by the general formula (1), and a monomer giving the structural unit represented by the general formula (1) may be used. It may be a copolymer with other monomers. When the hydroxystyrene resin is a copolymer, the proportion of the structural unit represented by the general formula (1) in the copolymer is 100% of the component (A) from the viewpoint of the solubility of the exposed part in an alkaline developer. 10 to 100 mol% is preferable, 20 to 97 mol% is more preferable, 30 to 95 mol% is further preferable, and 50 to 95 mol% is particularly preferable, with respect to mol%.

When the hydroxystyrene resin is a copolymer of a monomer giving the structural unit represented by the general formula (1) and a monomer other than the monomer, the dissolution inhibiting property of the unexposed portion in the alkaline developer is further improved. From the viewpoint, the hydroxystyrene-based resin may have a structural unit represented by the following general formula (2).

In the formula (2), R ²³ represents a hydrogen atom or a methyl group, R ²⁴ represents an alkyl group having 1 to 10 carbon atoms, an aryl group having 6 to 10 carbon atoms or an alkoxy group having 1 to 10 carbon atoms, and c Represents an integer of 0 to 3.

Examples of the alkyl group having 1 to 10 carbon atoms, the aryl group having 6 to 10 carbon atoms or the alkoxy group having 1 to 10 carbon atoms represented by R ²⁴ include the same groups as R ²² .

The hydroxystyrene-based resin having the structural unit represented by the general formula (2) is obtained by using a monomer which gives the structural unit represented by the general formula (2). Examples of the monomer giving the structural unit represented by the general formula (2) include styrene, α-methylstyrene, o-methylstyrene, m-methylstyrene, p-methylstyrene, o-methoxystyrene, m-methoxystyrene. And aromatic vinyl compounds such as p-methoxystyrene. Each of these monomers may be used alone or in combination of two or more.

When the hydroxystyrene-based resin has the structural unit represented by the general formula (2), it is represented by the general formula (2) from the viewpoint of the dissolution inhibiting property of the unexposed portion with respect to the alkaline developer and the mechanical properties of the patterned cured film. The ratio of the structural unit is preferably 1 to 90 mol%, more preferably 3 to 80 mol%, further preferably 5 to 70 mol%, particularly preferably 5 to 50 mol%, relative to 100 mol% of the component (A). preferable.

When the hydroxystyrene-based resin is a copolymer of a monomer giving the structural unit represented by the general formula (1) and a monomer other than the monomer, from the viewpoint of lowering the elastic modulus, the hydroxystyrene-based resin is You may have the structural unit represented by General formula (3).

In formula (3), R ²⁵ represents a hydrogen atom or a methyl group, and R ²⁶ represents an alkyl group having 1 to 10 carbon atoms or a hydroxyalkyl group having 1 to 10 carbon atoms.

The hydroxystyrene-based resin having the structural unit represented by the general formula (3) can be obtained by using a monomer which gives the structural unit represented by the general formula (3). Examples of the monomer giving the structural unit represented by the general formula (3) include methyl (meth) acrylate, ethyl (meth) acrylate, propyl (meth) acrylate, butyl (meth) acrylate, and (meth) acrylate. Pentyl acrylate, hexyl (meth) acrylate, heptyl (meth) acrylate, octyl (meth) acrylate, nonyl (meth) acrylate, decyl (meth) acrylate, hydroxymethyl (meth) acrylate, (meth) Hydroxyethyl acrylate, hydroxypropyl (meth) acrylate, hydroxybutyl (meth) acrylate, hydroxypentyl (meth) acrylate, hydroxyhexyl (meth) acrylate, hydroxyheptyl (meth) acrylate, (meth) acrylic acid Hydroxyoctyl, Hydroxynonyl (meth) acrylate and (Meth) acrylic acid hydroxy decyl. Each of these monomers may be used alone or in combination of two or more.

When the hydroxystyrene-based resin has the structural unit represented by the general formula (3), it is represented by the general formula (3) from the viewpoint of dissolution inhibiting property of the unexposed portion with respect to the alkaline developer and mechanical properties of the patterned cured film. The ratio of the structural unit is preferably 1 to 90 mol%, more preferably 3 to 80 mol%, further preferably 5 to 70 mol%, particularly preferably 5 to 50 mol%, relative to 100 mol% of the component (A). preferable.

<(B) component>
The compound having a benzotriazole skeleton, which is the component (B), is a component that suppresses the occurrence of voids in the copper layer when a cured film is formed on a substrate having a copper layer using a photosensitive resin composition. is there.

Examples of the component (B) include 1,2,3-benzotriazole, 5-aminobenzotriazole and 5-methylbenzotriazole. As the component (B), one type can be used alone, or two or more types can be used in combination.

The content of the component (B) is preferably 0.1 to 3 parts by mass, more preferably 0.2 to 2 parts by mass, relative to 100 parts by mass of the component (A), from the viewpoint of further suppressing the generation of voids. More preferably, it is 0.3 to 1.5 parts by mass.

<(C) component>
Examples of the elastomer as the component (C) include styrene-based elastomers, olefin-based elastomers, urethane-based elastomers, polyester-based elastomers, polyamide-based elastomers, acrylic-based elastomers, and silicone-based elastomers. These may be used alone or in combination of two or more.

The component (C) may be an acrylic elastomer because it has excellent breaking strength, breaking elongation and thermal expansion of the cured film. The acrylic elastomer may have a structural unit represented by the following general formula (4).

In the general formula (4), R ³¹ represents a hydrogen atom or a methyl group, and R ³² represents a hydroxyalkyl group having 2 to 20 carbon atoms.

Examples of the hydroxyalkyl group having 2 to 20 carbon atoms represented by R ³² include hydroxyethyl group, hydroxypropyl group, hydroxybutyl group, hydroxypentyl group, hydroxyhexyl group, hydroxyheptyl group, hydroxyoctyl group and hydroxynonyl group. , Hydroxydecyl group, hydroxyundecyl group, hydroxydodecyl group (sometimes referred to as hydroxylauryl group), hydroxytridecyl group, hydroxytetradecyl group, hydroxypentadecyl group, hydroxyhexadecyl group, hydroxyheptadecyl group, hydroxy Examples include an octadecyl group, a hydroxynonadecyl group and a hydroxyeicosyl group.

The acrylic elastomer further has a structural unit represented by the following general formula (5), a structural unit represented by the following general formula (6), or a structural unit represented by the following general formula (7). Good.

In the formula (5), R ³³ represents a hydrogen atom or a methyl group, and R ³⁴ represents a monovalent organic group having a primary, secondary or tertiary amino group.

Examples of the primary, secondary or tertiary amino group represented by R ³⁴ include aminoethyl group, N-methylaminoethyl group, N, N-dimethylaminoethyl group, N-ethylaminoethyl group, N, N -Diethylaminoethyl group, aminopropyl group, N-methylaminopropyl group, N, N-dimethylaminopropyl group, N-ethylaminopropyl group, N, N-diethylaminopropyl group, piperidin-4-yl group, 1-methyl Piperidin-4-yl group, 2,2,6,6-tetramethylpiperidin-4-yl group, 1,2,2,6,6-pentamethylpiperidin-4-yl group, (piperidin-4-yl) Examples thereof include a methyl group and a 2- (piperidin-4-yl) ethyl group.

In the formula (6), R ³⁵ represents a hydrogen atom or a methyl group, and R ³⁶ represents an alkyl group having 4 to 20 carbon atoms.

Examples of the alkyl group having 4 to 20 carbon atoms represented by R ³⁶ include a butyl group, a pentyl group, a hexyl group, a heptyl group, an octyl group, a nonyl group, a decyl group, an undecyl group and a dodecyl group (also referred to as a lauryl group. A), a tridecyl group, a tetradecyl group, a pentadecyl group, a hexadecyl group, a heptadecyl group, an octadecyl group, a nonadecyl group and an eicosyl group. These groups may be linear or branched.

In formula (7), R ³⁷ represents a hydrogen atom or a methyl group.

The acrylic elastomer is, for example, a monomer which gives the structural unit represented by the general formula (4), and a structural unit represented by the general formula (5), (6) or (7) which is added as necessary. It can be obtained by blending a monomer that gives the compound, stirring in a solvent such as ethyl lactate, toluene, isopropanol, and heating if necessary.

The weight average molecular weight (Mw) of the acrylic elastomer is preferably 2,000 to 100,000, more preferably 3,000 to 60,000, further preferably 5,000 to 50,000, and particularly preferably 10,000 to 40,000. . Here, Mw is a value obtained by measuring by gel permeation chromatography (GPC) method and converting from a standard polystyrene calibration curve.

The content of the component (C) is preferably 1 to 35 parts by mass, and more preferably 3 to 30 parts by mass, relative to 100 parts by mass of the component (A), from the viewpoint of more excellent breaking strength and elongation at break. More preferably, it is more preferably 5 to 25 parts by mass.

<(D) component>
The compound that generates an acid by receiving light (component (D)) functions as a photosensitizer in the photosensitive resin composition. The component (D) has a function of generating an acid upon irradiation with light and increasing the solubility of the portion of the resin film irradiated with light in an aqueous alkaline solution. As the component (D), a compound generally called a photo-acid generator can be used. Specific examples of the component (D) include o-quinonediazide compounds, aryldiazonium salts, diaryliodonium salts and triarylsulfonium salts. The component (D) may be composed of only one of these compounds, or may be composed of two or more kinds. Of these, the component (D) is preferably an o-quinonediazide compound because of its high sensitivity.

As the o-quinonediazide compound, for example, a compound obtained by subjecting an o-quinonediazidesulfonyl chloride to a condensation reaction with a hydroxy compound and / or an amino compound in the presence of a dehydrochlorinating agent can be used.

Examples of o-quinonediazidesulfonyl chloride include benzoquinone-1,2-diazide-4-sulfonyl chloride, naphthoquinone-1,2-diazide-5-sulfonyl chloride and naphthoquinone-1,2-diazide-6-sulfonyl chloride. To be

Examples of the hydroxy compound include hydroquinone, resorcinol, pyrogallol, bisphenol A, bis (4-hydroxyphenyl) methane, 1,1-bis (4-hydroxyphenyl) -1- [4- {1- (4-hydroxyphenyl) ) -1-Methylethyl} phenyl] ethane, 2,2-bis (4-hydroxyphenyl) hexafluoropropane, 2,3,4-trihydroxybenzophenone, 2,3,4,4′-tetrahydroxybenzophenone, 2 , 2 ', 4,4'-tetrahydroxybenzophenone, 2,3,4,2', 3'-pentahydroxybenzophenone, 2,3,4,3 ', 4', 5'-hexahydroxybenzophenone, bis ( 2,3,4-trihydroxyphenyl) methane, bis (2,3,4-trihydroxyphene) Ru) propane, 4b, 5,9b, 10-tetrahydro-1,3,6,8-tetrahydroxy-5,10-dimethylindeno [2,1-a] indene, tris (4-hydroxyphenyl) methane and Examples include tris (4-hydroxyphenyl) ethane.

Examples of the amino compound include p-phenylenediamine, m-phenylenediamine, 4,4′-diaminodiphenyl ether, 4,4′-diaminodiphenylmethane, 4,4′-diaminodiphenyl sulfone and 4,4′-diaminodiphenyl sulfide. , O-aminophenol, m-aminophenol, p-aminophenol, 3,3′-diamino-4,4′-dihydroxybiphenyl, 4,4′-diamino-3,3′-dihydroxybiphenyl, bis (3- Amino-4-hydroxyphenyl) propane, bis (4-amino-3-hydroxyphenyl) propane, bis (3-amino-4-hydroxyphenyl) sulfone, bis (4-amino-3-hydroxyphenyl) sulfone, bis ( 3-Amino-4-hydroxyphenyl) hexaful Ropuropan and bis (4-amino-3-hydroxyphenyl) hexafluoropropane and the like.

Among these, from the viewpoint of reactivity when synthesizing an o-quinonediazide compound and the viewpoint of having an appropriate absorption wavelength range when exposing a resin film, 1,1-bis (4-hydroxyphenyl) -1- Condensation product of [4- {1- (4-hydroxyphenyl) -1-methylethyl} phenyl] ethane with 1-naphthoquinone-2-diazide-5-sulfonyl chloride, tris (4-hydroxyphenyl) methane or tris ( It is preferable to use a condensate of 4-hydroxyphenyl) ethane with 1-naphthoquinone-2-diazide-5-sulfonyl chloride.

Examples of the dehydrochlorinating agent include sodium carbonate, sodium hydroxide, sodium hydrogen carbonate, potassium carbonate, potassium hydroxide, trimethylamine, triethylamine and pyridine. Examples of the reaction solvent include dioxane, acetone, methyl ethyl ketone, tetrahydrofuran, diethyl ether and N-methylpyrrolidone.

When o-quinonediazidesulfonyl chloride is mixed with a hydroxy compound and / or an amino compound, the total number of moles of hydroxy group and amino group is 0.5 to 1 mole per mole of o-quinonediazidesulfonyl chloride. It is preferable that the composition is blended as follows. A preferred mixing ratio of the dehydrochlorinating agent and o-quinonediazidesulfonyl chloride is in the range of 0.95 / 1 to 1 / 0.95 molar equivalent.

The preferable reaction temperature of the above reaction is 0 to 40 ° C., and the preferable reaction time is 1 to 10 hours.

The content of the component (D) is preferably 3 to 100 parts by mass with respect to 100 parts by mass of the component (A) from the viewpoint that the difference in dissolution rate between the exposed part and the unexposed part becomes large and the sensitivity becomes better. 5 to 50 parts by mass is more preferable, 5 to 30 parts by mass is further preferable, and 5 to 20 parts by mass is particularly preferable.

<(E) component>
The photosensitive resin composition of the present embodiment may further contain a thermal crosslinking agent as the component (E). The component (E) is a compound having a structure capable of reacting with the component (A) to form a bridge structure when the resin film is heated to form a cured film. By using the component (E), the strength of the cured film can be improved. Examples of the component (E) include compounds having a phenolic hydroxyl group, compounds having an alkoxymethyl group, and compounds having an epoxy group.

Note that the "compound having a phenolic hydroxyl group" here does not include the component (A). The compound having a phenolic hydroxyl group as a thermal cross-linking agent can not only serve as a thermal cross-linking agent, but can also increase the dissolution rate of the exposed area when the resin film is developed with an aqueous alkaline solution to improve the sensitivity. The Mw of such a compound having a phenolic hydroxyl group is preferably 2000 or less, more preferably 94 to 2000, and more preferably 108 to 2000 in consideration of the balance of solubility in an alkaline aqueous solution and mechanical properties. It is more preferable that it is, and it is particularly preferable that it is 108 to 1500.

The component (E) is preferably a compound having an alkoxymethyl group from the viewpoint of excellent effect of preventing melting at the time of curing the resin film, and from the viewpoint of heat resistance and mechanical properties of the cured film, four components are preferable. The compound having the above alkoxymethyl group is more preferable.

The compound having four or more alkoxymethyl groups is more preferably a compound represented by the following general formula (11) or a compound represented by the following general formula (12) from the viewpoint of heat resistance and chemical resistance. .

In formula (11), R ¹ to R ⁶ each independently represent an alkyl group having 1 to 10 carbon atoms. Examples of the alkyl group having 1 to 10 carbon atoms represented by R ¹ to R ⁶ include the same groups as R ²² . From the viewpoint of reactivity at low temperature, the alkyl group preferably has 1 to 5 carbon atoms, more preferably 1 to 3 carbon atoms, further preferably 1 or 2 carbon atoms, and particularly preferably 1 carbon atom. preferable.

In formula (12), R ⁷ to R ¹² each independently represent an alkyl group having 1 to 10 carbon atoms. Examples of the alkyl group having 1 to 10 carbon atoms represented by R ⁷ to R ¹² include the same groups as R ²² . The alkyl group preferably has 1 to 5 carbon atoms, more preferably 1 to 3 carbon atoms, further preferably 1 or 2 carbon atoms, and particularly preferably 1.

The content of the component (E) is 0.5 to 100 parts by mass of the component (A) from the viewpoint of improving the heat resistance of the cured film and reducing the warpage when the cured film is formed on the substrate. 50 parts by mass is preferable, 1 to 40 parts by mass is more preferable, and 2 to 30 parts by mass is further preferable.

<(F) component>
The photosensitive resin composition of this embodiment may further contain a compound having two or more epoxy groups as the component (F). The component (F) can react with the component (A) to form a bridge structure when the resin film after pattern formation is heated and cured together with the compound which is the component (E).

Component (F) can be used without particular limitation as long as it is a compound having two or more epoxy groups. Examples of the component (F) include aliphatic epoxy compounds, aromatic epoxy compounds, alicyclic epoxy compounds, heterocyclic epoxy compounds, bisphenol type epoxy compounds, novolac type epoxy compounds, glycidyl amine type epoxy compounds and halogenated epoxies. Compounds. These may be used alone or in combination of two or more.

The component (F) is preferably an epoxy compound having an aromatic ring or a heterocyclic ring, more preferably an epoxy compound having a heterocyclic ring, and an epoxy compound having a nitrogen-containing heterocyclic ring, from the viewpoint of being more resistant to chemicals. More preferably,

The component (F) is preferably a compound represented by the following general formula (13) from the viewpoint of better resistance to chemicals.

In formula (13), R ¹³ to R ¹⁵ each independently represent an alkylene group having 1 to 10 carbon atoms.

Examples of the alkylene group having 1 to 10 carbon atoms represented by R ¹³ to R ¹⁵ in the general formula (13) include a methylene group, an ethylene group, a propylene group, a butylene group, a pentylene group, a hexylene group, a heptylene group, and an octylene group. Group, nonylene group and decylene group. These groups may be linear or branched. The alkylene group preferably has 1 to 8 carbon atoms, and more preferably 1 to 6 carbon atoms.

The molar ratio of the component (F) to the component (E) (the number of moles of the component (F) / the number of moles of the component (E)) is 1.0 or less from the viewpoint of being more excellent in chemical resistance and breaking strength, It is preferably 9 or less, and more preferably 0.8 or less. The lower limit of the molar ratio of the component (F) to the component (E) is not particularly limited, but may be 0.1 or more, 0.2 or more, or 0.3 or more.

The total amount of the component (E) and the component (F) is preferably 2 to 35 parts by mass with respect to 100 parts by mass of the component (A) from the viewpoint of being superior in residual stress and chemical resistance. More preferably, the amount is more preferably 5 to 25 parts by mass.

<Other ingredients>
In addition to the components (A) to (F), the photosensitive resin composition of the present embodiment is a solvent, a compound that produces an acid upon heating, a dissolution accelerator, a dissolution inhibitor, a coupling agent, a surfactant, and leveling. You may contain ingredients, such as an agent.

(solvent)
Since the photosensitive resin composition of the present embodiment contains a solvent, application on a substrate can be facilitated and a coating film having a uniform thickness can be formed. Examples of the solvent include γ-butyrolactone, ethyl lactate, propylene glycol monomethyl ether acetate, benzyl acetate, n-butyl acetate, ethoxyethyl propionate, 3-methylmethoxypropionate, N-methyl-2-pyrrolidone, N , N-dimethylformamide, N, N-dimethylacetamide, dimethyl sulfoxide, hexamethylphosphorylamide, tetramethylene sulfone, diethyl ketone, diisobutyl ketone, methyl amyl ketone, cyclohexanone, propylene glycol monomethyl ether, propylene glycol monopropyl ether, propylene glycol Mention may be made of monobutyl ether and dipropylene glycol monomethyl ether. These solvents may be used alone or in combination of two or more. Among these, it is preferable to use ethyl lactate or propylene glycol monomethyl ether acetate as the solvent from the viewpoint of solubility and uniformity of the coating film.

(Compound that generates acid by heating)
By using a compound that generates an acid by heating, it becomes possible to generate an acid when the resin film is heated, and the reaction between the (A) component and the (E) component, that is, the thermal crosslinking reaction is promoted, and curing is performed. The heat resistance of the film can be improved. In addition, a compound that generates an acid by heating also generates an acid by irradiation with light, so that the solubility of the exposed portion of the resin film in an alkaline aqueous solution is increased. Therefore, the difference in solubility between the unexposed portion and the exposed portion of the resin film in the alkaline aqueous solution is further increased and the resolution is further improved.

The compound that produces an acid by such heating may be, for example, a compound that produces an acid by heating to 50 to 250 ° C. Specific examples of the compound that generates an acid by heating include salts formed from a strong acid such as an onium salt and a base, and imidosulfonate.

When using a compound that generates an acid by heating, the content is preferably 0.1 to 30 parts by mass, more preferably 0.2 to 20 parts by mass, and 0.5 with respect to 100 parts by mass of the component (A). It is more preferably about 10 to 10 parts by mass.

(Dissolution accelerator)
By adding a dissolution accelerator to the photosensitive resin composition, it is possible to increase the dissolution rate of the exposed area when the resin film is developed with an alkaline aqueous solution, and to improve the sensitivity and resolution. As the dissolution accelerator, conventionally known ones can be used. Specific examples of the dissolution accelerator include compounds having a carboxyl group, a sulfonic acid or a sulfonamide group.

The content of the dissolution accelerator when used can be determined by the dissolution rate in an alkaline aqueous solution, and can be, for example, 0.01 to 30 parts by mass with respect to 100 parts by mass of the component (A).

(Dissolution inhibitor)
The dissolution inhibitor is a compound that inhibits the solubility of the component (A) in an alkaline aqueous solution, and is used for controlling the remaining film thickness, the development time and the contrast. Examples of the dissolution inhibitor include diphenyliodonium nitrate, bis (p-tert-butylphenyl) iodonium nitrate, diphenyliodonium bromide, diphenyliodonium chloride and diphenyliodonium iodide. When a dissolution inhibitor is used, the content is preferably 0.01 to 20 parts by mass, and 0.01 to 15 parts by mass with respect to 100 parts by mass of the component (A) from the viewpoint of sensitivity and the allowable range of development time. More preferably, 0.05 to 10 parts by mass is even more preferable.

(Coupling agent)
By blending the coupling agent with the photosensitive resin composition, the adhesion of the formed cured film to the substrate can be further enhanced. Examples of the coupling agent include organic silane compounds and aluminum chelate compounds. Examples of the organic silane compound include KBM-403, KBM-803 and KBM-903 (trade name, manufactured by Shin-Etsu Chemical Co., Ltd.). When the coupling agent is used, the content is preferably 0.1 to 20 parts by mass, more preferably 0.5 to 10 parts by mass, relative to 100 parts by mass of the component (A).

(Surfactant or leveling agent)
By coating the photosensitive resin composition with a surfactant or a leveling agent, the coating property can be further improved. Specifically, for example, by containing a surfactant or a leveling agent, striation (unevenness of film thickness) can be further prevented and the developability can be further improved. Examples of the surfactant or leveling agent include polyoxyethylene lauryl ether, polyoxyethylene stearyl ether, polyoxyethylene oleyl ether and polyoxyethylene octylphenol ether. Examples of commercially available products include Megafac F-171, F-565 and RS-78 (trade name, manufactured by DIC Corporation).

When a surfactant or a leveling agent is used, the content is preferably 0.001 to 5 parts by mass, more preferably 0.01 to 3 parts by mass, relative to 100 parts by mass of the component (A).

The photosensitive resin composition of this embodiment can be developed using an alkaline aqueous solution such as tetramethylammonium hydroxide (TMAH). By using the photosensitive resin composition of the present embodiment as the photosensitive resin, it becomes possible to form a patterned cured film having sufficiently high developability and good adhesion to copper and thermal shock resistance.

[Pattern cured film and method for producing the same]
The patterned cured film of one embodiment has a pattern, and the pattern includes a cured product of a resin film made of the above-described photosensitive resin composition. The pattern cured film is obtained by heating the above-mentioned photosensitive resin composition. Hereinafter, a method for manufacturing the patterned cured film will be described.

The method for producing a patterned cured film of the present embodiment is a step of applying and drying the above-mentioned photosensitive resin composition on a part or all of a substrate having a copper layer to form a resin film (application / drying (film formation) Step), a step of exposing a part or all of the resin film (exposure step), a step of developing the exposed resin film with an alkaline aqueous solution to form a pattern resin film (developing step), and a step of exposing the pattern resin film. A heating step (heat treatment step). Hereinafter, each step will be described.

<Coating / drying (film formation) process>
First, the photosensitive resin composition of the present embodiment is applied onto a substrate having a copper layer and dried to form a resin film. In this step, the photosensitive resin composition of this embodiment is spin-coated on the copper layer of the substrate using a spinner or the like to form a coating film. The thickness of the coating film is not particularly limited, but is preferably 0.1 to 40 μm. The substrate on which this coating film is formed is dried using a hot plate, an oven or the like. The drying temperature and the drying time are not particularly limited, but it is preferably performed at 80 to 140 ° C. for 1 to 7 minutes. As a result, a resin film is formed on the support substrate. The thickness of the resin film is not particularly limited, but is preferably 0.1 to 40 μm.

<Exposure process>
Next, in the exposure step, the resin film formed on the substrate is irradiated with actinic rays such as ultraviolet rays, visible rays, and radiation through a mask. In the photosensitive resin composition of the present embodiment, the component (A) has a high transparency for i-rays, and thus irradiation with i-rays can be preferably used. After exposure, post-exposure heating (PEB) can be performed, if necessary, from the viewpoint of improving the dissolution rate. When the post-exposure heating is performed, the temperature is preferably 70 to 140 ° C., and the post-exposure heating time is preferably 1 to 5 minutes.

<Developing process>
In the developing step, the resin film is patterned by removing the exposed portion of the resin film after the exposing step with a developing solution to obtain a patterned resin film. As the developing solution, for example, an alkali aqueous solution such as sodium carbonate, sodium hydroxide, potassium hydroxide, sodium silicate, ammonia, ethylamine, diethylamine, triethylamine, triethanolamine, tetramethylammonium hydroxide (TMAH) is preferably used. To be The base concentration of these aqueous solutions is preferably 0.1 to 10% by mass. Further, an alcohol or a surfactant may be added to the above developer for use. Each of these may be added in an amount of preferably 0.01 to 10 parts by mass, more preferably 0.1 to 5 parts by mass, relative to 100 parts by mass of the developer. When development is performed using a developing solution, for example, the developing solution is placed on the resin film by a method such as shower development, spray development, dip development, and puddle development, and the temperature is 30 to 360 ° C. under the condition of 18 to 40 ° C. Let stand for a second. After standing, the patterned resin film is washed by washing with water and spin drying.

<Heat treatment step>
Next, in the heat treatment step, the pattern cured film can be formed by heat treating the pattern resin film. The heating temperature in the heat treatment step is preferably 250 ° C. or lower, and more preferably 230 ° C. or lower, from the viewpoint of sufficiently preventing damage to the semiconductor device due to heat.

The heat treatment can be performed using an oven such as a quartz tube furnace, a hot plate, rapid thermal annealing, a vertical diffusion furnace, an infrared curing furnace, an electron beam curing furnace, and a microwave curing furnace. Further, either in the air or in an inert atmosphere such as nitrogen can be selected, but it is preferable to carry out under nitrogen because oxidation of the pattern can be prevented. Since the preferable heating temperature range described above is lower than the conventional heating temperature, damage to the supporting substrate and the semiconductor device can be suppressed to be small. Therefore, by using the method of manufacturing a resist pattern according to this embodiment, electronic devices can be manufactured with high yield. It also leads to energy savings in the process. Furthermore, according to the photosensitive resin composition of the present embodiment, since the volume shrinkage (curing shrinkage) in the heat treatment step found in photosensitive polyimide and the like is small, it is possible to prevent a decrease in dimensional accuracy.

The heat treatment time in the heat treatment step may be a time sufficient for the photosensitive resin composition to cure, but it is preferably 5 hours or less in consideration of work efficiency.

Also, the heat treatment can be performed using a microwave curing device or a frequency variable microwave curing device in addition to the oven described above. By using these devices, it is possible to effectively heat only the photosensitive resin film while maintaining the temperature of the substrate and the semiconductor device at, for example, 200 ° C. or lower (J. Photopolym. Sci. Technol., 18, 327-332 (2005)).

According to the method for producing a patterned cured film of the present embodiment described above, a patterned cured film having sufficiently high sensitivity and resolution, and excellent in adhesion and thermal shock resistance can be obtained.

[Interlayer insulation layer, surface protection layer]
The patterned cured film of this embodiment can be used as an interlayer insulating layer or a surface protective layer of a semiconductor element. When a semiconductor element having a pattern-cured film formed on a substrate having a copper layer is left at high temperature, it is possible to suppress the occurrence of voids in the copper layer.

[Semiconductor element]
The semiconductor device of one embodiment includes the interlayer insulating layer or the surface protection layer of this embodiment. The semiconductor element of the present embodiment means a memory, a package, etc. having a multilayer wiring structure, a rewiring structure, etc., although not particularly limited thereto.

Here, an example of a semiconductor element manufacturing process will be described with reference to the drawings. 1 to 5 are schematic perspective views and schematic end views showing one embodiment of a manufacturing process of a semiconductor device having a multilayer wiring structure. 1 to 5, (a) is a schematic perspective view, and (b) is a schematic end view showing Ib-Ib to Vb-Vb end faces in (a), respectively.

First, the structure 100 shown in FIG. 1 is prepared. The structure 100 includes a semiconductor substrate 1 such as a Si substrate having a circuit element, a predetermined pattern for exposing the circuit element, a protective film 2 such as a silicon oxide film covering the semiconductor substrate 1, and the exposed circuit element. The first conductor layer 3 formed thereon and the interlayer insulating layer 4 made of polyimide resin or the like formed on the protective film 2 and the first conductor layer 3 by a spin coating method or the like are provided.

Next, the photosensitive resin layer 5 having the window portion 6A is formed on the interlayer insulating layer 4 to obtain the structure 200 shown in FIG. The photosensitive resin layer 5 is formed, for example, by applying a photosensitive resin such as a chlorinated rubber type, a phenol novolac type, a polyhydroxystyrene type, or a polyacrylic acid ester type by a spin coating method. The window portion 6A is formed by a known photo-etching technique so that the interlayer insulating layer 4 in a predetermined portion is exposed.

After the interlayer insulating layer 4 is etched to form the window 6B, the photosensitive resin layer 5 is removed to obtain the structure 300 shown in FIG. Dry etching means using a gas such as oxygen or carbon tetrafluoride can be used for etching the interlayer insulating layer 4. By this etching, the interlayer insulating layer 4 in the portion corresponding to the window 6A is selectively removed, and the interlayer insulating layer 4 provided with the window 6B so that the first conductor layer 3 is exposed is obtained. Next, the photosensitive resin layer 5 is removed using an etching solution that corrodes only the photosensitive resin layer 5 without corroding the first conductor layer 3 exposed from the window 6B.

Further, the second conductor layer 7 is formed in the portion corresponding to the window 6B to obtain the structure 400 shown in FIG. A known photo-etching technique can be used to form the second conductor layer 7. As a result, the second conductor layer 7 and the first conductor layer 3 are electrically connected.

Finally, the surface protection layer 8 is formed on the interlayer insulating layer 4 and the second conductor layer 7 to obtain the semiconductor element 500 shown in FIG. In this embodiment, the surface protective layer 8 is formed as follows. First, the above-mentioned photosensitive resin composition is applied onto the interlayer insulating layer 4 and the second conductor layer 7 by a spin coating method and dried to form a photosensitive resin film. Next, a predetermined portion is irradiated with light through a mask having a pattern corresponding to the window portion 6C, and the exposed resin film is developed with an alkaline aqueous solution to form a patterned resin film. Then, the pattern resin film is cured by heating to form the pattern cured film used as the surface protective layer 8. The surface protection layer 8 protects the first conductor layer 3 and the second conductor layer 7 from external stress, α rays, etc., and the semiconductor element 500 using the surface protection layer 8 of the present embodiment is reliable. Excellent in performance.

Although the method of manufacturing a semiconductor device having a two-layer wiring structure has been described in the above embodiment, when a multilayer wiring structure having three or more layers is formed, the above steps are repeated to form each layer. You can That is, it is possible to form a multilayer pattern by repeating each step of forming the interlayer insulating layer 4 and each step of forming the surface protective layer 8. Further, in the above example, not only the surface protective layer 8 but also the interlayer insulating layer 4 can be formed using the photosensitive resin composition of the present embodiment.

The semiconductor element of the present embodiment is not limited to the one having the surface protective layer, the cover coat layer or the interlayer insulating layer formed by using the above-mentioned photosensitive resin composition, and can have various structures.

6 and 7 are schematic cross-sectional views showing one embodiment of a semiconductor device having a rewiring structure. Since the photosensitive resin composition of the present embodiment is excellent in stress relaxation property, adhesive property, etc., it can be used in the recently developed semiconductor device having a rewiring structure as shown in FIGS.

FIG. 6 is a schematic cross-sectional view showing a wiring structure as an embodiment of a semiconductor element. A semiconductor element 600 shown in FIG. 6 has a silicon substrate 23, an interlayer insulating layer 11 provided on one side of the silicon substrate 23, and an Al formed on the interlayer insulating layer 11 and having a pattern including a pad portion 15. A wiring layer 12, an insulating layer 13 (for example, a P—SiN layer or the like) and a surface protection layer 14 which are sequentially stacked on the interlayer insulating layer 11 and the Al wiring layer 12 while forming an opening on the pad portion 15, and a surface. The island-shaped core 18 arranged in the vicinity of the opening on the protective layer 14 is in contact with the pad portion 15 in the opening of the insulating layer 13 and the surface protective layer 14, and on the surface of the core 18 opposite to the surface protective layer 14. And a redistribution layer 16 extending on the surface protection layer 14 so as to be in contact with each other. Further, the semiconductor element 600 is formed so as to cover the surface protection layer 14, the core 18 and the redistribution layer 16, and a cover coat layer 19 in which an opening is formed in a portion of the redistribution layer 16 on the core 18, and a cover coat. Provided on the cover coat layer 19 around the conductive balls 17, the conductive balls 17 connected to the redistribution layer 16 with the barrier metal 20 interposed therebetween in the opening of the layer 19, the collar 21 holding the conductive balls 17. And an underfill 22 that has been formed. The conductive balls 17 are used as external connection terminals and are made of solder, gold, or the like. The underfill 22 is provided to relieve stress when mounting the semiconductor element 600.

In a semiconductor device 700 of FIG. 7, an Al wiring layer (not shown) and a pad portion 15 of the Al wiring layer are formed on a silicon substrate 23, an insulating layer 13 is formed on the Al wiring layer, and a pad portion 15 of the Al wiring layer is further formed. The surface protection layer 14 is formed. A rewiring layer 16 is formed on the pad portion 15, and the rewiring layer 16 extends to an upper portion of the connection portion 24 with the conductive ball 17. Further, a cover coat layer 19 is formed on the surface protective layer 14. The redistribution layer 16 is connected to the conductive balls 17 via the barrier metal 20.

In the semiconductor elements of FIGS. 6 and 7, the photosensitive resin composition is a material for forming not only the interlayer insulating layer 11 and the surface protective layer 14 but also the cover coat layer 19, the core 18, the collar 21, the underfill 22, and the like. Can be used as The pattern cured film using the photosensitive resin composition of the present embodiment has excellent adhesiveness to a metal layer such as the Al wiring layer 12 or the rewiring layer 16 or a sealant, and has a high stress relaxation effect. The semiconductor element using the pattern cured film for the interlayer insulating layer 11, the surface protective layer 14, the cover coat layer 19, the core 18, the collar 21 such as solder, the underfill 22 used for flip chips and the like is extremely excellent in reliability. Will be things.

The photosensitive resin composition of this embodiment is preferably used for the interlayer insulating layer 11, the surface protective layer 14, or the cover coat layer 19 of the semiconductor element having the rewiring layer 16 in FIGS. 6 and 7.

The film thickness of the interlayer insulating layer 11, the surface protective layer 14, and the cover coat layer 19 is preferably 3 to 20 μm, more preferably 5 to 15 μm.

[Electronic device]
An electronic device of one embodiment has the semiconductor element of this embodiment. The electronic device includes the semiconductor element described above, and examples thereof include a mobile phone, a smartphone, a tablet terminal, a personal computer, and a hard disk suspension.

The present invention will be specifically described below based on examples, but the present invention is not limited to these.

The materials used in the examples are shown below.

[(A) component]
A1: 4-Hydroxystyrene / styrene = 85/15 (molar ratio) copolymer (Mw = 10000, Maruzen Petrochemical Co., Ltd., trade name “Markarlinker CST”)

Mw was calculated by standard polystyrene conversion using the gel permeation chromatography (GPC) method. Specifically, Mw was measured with the following devices and conditions.
(measuring device)
Detector: "L4000UV" manufactured by Hitachi, Ltd.
Pump: "L6000" made by Hitachi, Ltd.
Column: Gelpack GL-S300MDT-5 x 2 (measurement condition)
Eluent: THF
LiBr (0.03 mol / L), H ₃ PO ₄ (0.06 mol / L)
Flow rate: 1.0 mL / min, Detector: UV270 nm
It was measured using a solution of 1 mL of a solvent [THF / DMF = 1/1 (volume ratio)] for 0.5 mg of a sample.

[(B) component]
B1: 1,2,3-benzotriazole (Product name "BT-120" manufactured by Johoku Chemical Industry Co., Ltd.)
B2: 5-amino-benzotriazole B3: 5-methyl-benzotriazole

[(B ') component]
B4: 1H-tetrazole B5: 5-amino-1H-tetrazole B6: 5-mercaptotetrazole B7: 5-phenyltetrazole B8: 2-aminopyridine B9: xylitol B10: 8-azaadenine

[(C) component]
C1: 55 g of ethyl lactate was weighed in a 100 mL three-necked flask equipped with a stirrer, a nitrogen introducing tube, and a thermometer, and the separately weighed polymerizable monomer (n-butyl acrylate (BA) 34.7 g). , Lauryl acrylate (LA) 2.2 g, acrylic acid (AA) 3.9 g, hydroxybutyl acrylate (HBA) 2.6 g and 1,2,2,6,6-pentamethylpiperidin-4-yl methacrylate ( 1.7 g of trade name "FA-711MM" manufactured by Hitachi Chemical Co., Ltd.) and 0.29 g of azobisisobutyronitrile (AIBN) were added, while stirring at room temperature at a stirring rotation speed of about 160 rpm and nitrogen. The gas was flowed at a flow rate of 400 mL / min for 30 minutes to remove dissolved oxygen, then the inflow of nitrogen gas was stopped, the flask was sealed, and the temperature was raised to 65 ° C in a constant temperature water bath in about 25 minutes. The same temperature was maintained for 10 hours to carry out a polymerization reaction to obtain an elastomer C1.The polymerization rate at this time was 99%, and the Mw of this C1 was about 22,000. The molar ratio of the polymerizable monomer in C1 is as follows.
BA / LA / AA / HBA / FA-711MM = 70.5 / 2.5 / 20/5/2 (mol%)

[(D) component]
D1: Compound represented by the following formula (Y) (trade name "PA-28" manufactured by Daito Chemix Co., Ltd.)

[(E) component]
E1: a compound in which R ¹ to R ^{6 in} the general formula (11) are all methyl groups (hexakis (methoxymethyl) melamine, trade name “Nikalac MW-30HM” manufactured by Sanwa Chemical Co., Ltd., molecular weight: 390.4)

(Examples 1 to 6 and Comparative Examples 1 to 8)
The components (A) to (E) in the compounding amounts (parts by mass) shown in Table 1 or Table 2 and 120 parts by mass of ethyl lactate as a solvent are compounded, and this is pressurized using a Teflon (registered trademark) filter having 3 μm pores. After filtration, the photosensitive resin compositions of Examples and Comparative Examples were prepared.

[Evaluation]
(Photosensitive property)
The photosensitive resin composition was spin-coated on a silicon substrate and heated at 120 ° C. for 3 minutes to form a coating film having a film thickness of 11 to 13 μm. Next, an i-line stepper (manufactured by Canon Inc., trade name “FPA-3000iW”) was used to perform reduction projection exposure with an i-line (365 nm) through a mask having a square hole pattern of 1 μm × 1 μm to 100 μm × 100 μm. . Exposure amount was carried out while changing by 20mJ / cm ² to 100 ~ 1520mJ / cm ^2. After exposure, it was developed with a 2.38% aqueous solution of tetramethylammonium hydroxide (TMAH). The residual film rate of the unexposed area after development was calculated by the following formula.
Residual film rate (%) = (film thickness of film after development / film thickness of film before development) × 100

After development, rinse with water and set the minimum exposure amount that can form a 100 μm × 100 μm square hole pattern as the sensitivity. In addition, the size of the smallest square hole pattern (length of one side) within the range of the above exposure amount was used as an index of resolution. The smaller the sensitivity and resolution, the better. After that, the resist pattern was heat-treated (cured) for 2 hours in nitrogen at a temperature of 230 ° C. (heating time 1.5 hours) using a vertical diffusion furnace (trade name “μ-TF” manufactured by Koyo Thermo Systems Co., Ltd.). Then, the resolution after curing was measured. The evaluation method is the same as the evaluation method of the resolution before curing.

(void)
The photosensitive resin composition was spin-coated on a silicon substrate having a copper layer and heated at 120 ° C. for 3 minutes, and then a vertical diffusion furnace (trade name “μ-TF” manufactured by Koyo Thermo Systems Co., Ltd.) was used. It was heated in nitrogen at 230 ° C. (temperature rising time 1.5 hours) for 2 hours to form a cured film having a film thickness of 10 μm to obtain a laminate. After the laminated body was stored at 150 ° C. for 1000 hours, the cross section of the laminated body was observed using a scanning electron microscope.
The case where no void was observed before and after the test was determined as "A", and the case where a void was observed was determined as "B". FIG. 8 is a photomicrograph of Example 1 observing the presence or absence of voids. FIG. 9 is a photomicrograph of Comparative Example 1 observing the presence or absence of voids.

(Adhesion)
The photosensitive resin composition was spin-coated on a silicon substrate having a copper layer and heated at 120 ° C. for 3 minutes, and then a vertical diffusion furnace (trade name “μ-TF” manufactured by Koyo Thermo Systems Co., Ltd.) was used. Then, the laminate was heated in nitrogen at 230 ° C. (temperature rising time 1.5 hours) for 2 hours to prepare a laminated body on which a cured film having a film thickness of 10 μm was formed. The peel strength was evaluated according to JIS C 5016 (1994-strength of peeling conductor). In addition, in the present specification, room temperature refers to 25 ° C. When the peel strength was 0.4 kN / m or more, it was "A", when it was 0.3 kN / m or more and less than 0.4 kN / m, it was "B", and when it was less than 0.3 kN / m. It was judged as "C".

DESCRIPTION OF SYMBOLS 1 ... Semiconductor substrate, 2 ... Protective film, 3 ... 1st conductor layer, 4 ... Interlayer insulating layer, 5 ... Photosensitive resin layer, 6A, 6B, 6C ... Window part, 7 ... 2nd conductor layer, 8 ... Surface protection Layer, 11 ... Interlayer insulating layer, 12 ... Al wiring layer, 13 ... Insulating layer, 14 ... Surface protection layer, 15 ... Pad part, 16 ... Rewiring layer, 17 ... Conductive ball, 18 ... Core, 19 ... Cover coat Layer, 20 ... Barrier metal, 21 ... Color, 22 ... Underfill, 23 ... Silicon substrate, 24 ... Connection part, 100, 200, 300, 400 ... Structure, 500, 600, 700 ... Semiconductor element.

Claims (8)

1. (A) hydroxystyrene resin,
   (B) a compound having a benzotriazole skeleton,
   (C) Elastomer,
   (D) a compound that generates an acid by light,
   A photosensitive resin composition containing:
2. The photosensitive resin according to claim 1, wherein the content of the compound (B) having a benzotriazole skeleton is 0.1 to 3 parts by mass with respect to 100 parts by mass of the (A) hydroxystyrene resin. Composition.
3. The photosensitive resin composition according to claim 1 or 2, wherein the (C) elastomer includes an acrylic elastomer.
4. The photosensitive resin composition according to any one of claims 1 to 3, further comprising (E) a thermal crosslinking agent.
5. A patterned cured film having a pattern, the pattern including a cured product of a resin film comprising the photosensitive resin composition according to any one of claims 1 to 4.
6. A step of applying the photosensitive resin composition according to any one of claims 1 to 4 to a part or the whole of a substrate having a copper layer and drying the resin film to form a resin film;
   Exposing a part or all of the resin film,
   A step of developing the resin film after exposure with an alkaline aqueous solution to form a pattern resin film,
   Heating the pattern resin film,
   A method for producing a patterned cured film, comprising:
7. A semiconductor element comprising the patterned cured film according to claim 5 as an interlayer insulating layer or a surface protective layer.
8. An electronic device comprising the semiconductor element according to claim 7.

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