WO2020066077A1 - Phosphor element, method for producing same, and lighting device - Google Patents

Phosphor element, method for producing same, and lighting device Download PDF

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Publication number
WO2020066077A1
WO2020066077A1 PCT/JP2019/013259 JP2019013259W WO2020066077A1 WO 2020066077 A1 WO2020066077 A1 WO 2020066077A1 JP 2019013259 W JP2019013259 W JP 2019013259W WO 2020066077 A1 WO2020066077 A1 WO 2020066077A1
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WIPO (PCT)
Prior art keywords
phosphor
incident surface
incident
light
less
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PCT/JP2019/013259
Other languages
French (fr)
Japanese (ja)
Inventor
近藤 順悟
直剛 岡田
雄一 岩田
浅井 圭一郎
雄大 鵜野
Original Assignee
日本碍子株式会社
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Application filed by 日本碍子株式会社 filed Critical 日本碍子株式会社
Priority to JP2019519429A priority Critical patent/JP6632108B1/en
Priority to DE112019004254.8T priority patent/DE112019004254B4/en
Publication of WO2020066077A1 publication Critical patent/WO2020066077A1/en
Priority to US17/213,917 priority patent/US11262046B2/en
Priority to US17/577,638 priority patent/US11635189B2/en

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50Wavelength conversion elements
    • H01L33/505Wavelength conversion elements characterised by the shape, e.g. plate or foil
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21LIGHTING
    • F21VFUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V9/00Elements for modifying spectral properties, polarisation or intensity of the light emitted, e.g. filters
    • F21V9/30Elements containing photoluminescent material distinct from or spaced from the light source
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/02Use of particular materials as binders, particle coatings or suspension media therefor
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/77Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
    • C09K11/7766Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing two or more rare earth metals
    • C09K11/7774Aluminates
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21LIGHTING
    • F21VFUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V7/00Reflectors for light sources
    • F21V7/22Reflectors for light sources characterised by materials, surface treatments or coatings, e.g. dichroic reflectors
    • F21V7/24Reflectors for light sources characterised by materials, surface treatments or coatings, e.g. dichroic reflectors characterised by the material
    • F21V7/26Reflectors for light sources characterised by materials, surface treatments or coatings, e.g. dichroic reflectors characterised by the material the material comprising photoluminescent substances
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21LIGHTING
    • F21VFUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V9/00Elements for modifying spectral properties, polarisation or intensity of the light emitted, e.g. filters
    • F21V9/30Elements containing photoluminescent material distinct from or spaced from the light source
    • F21V9/32Elements containing photoluminescent material distinct from or spaced from the light source characterised by the arrangement of the photoluminescent material
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B19/00Condensers, e.g. light collectors or similar non-imaging optics
    • G02B19/0004Condensers, e.g. light collectors or similar non-imaging optics characterised by the optical means employed
    • G02B19/0028Condensers, e.g. light collectors or similar non-imaging optics characterised by the optical means employed refractive and reflective surfaces, e.g. non-imaging catadioptric systems
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B19/00Condensers, e.g. light collectors or similar non-imaging optics
    • G02B19/0033Condensers, e.g. light collectors or similar non-imaging optics characterised by the use
    • G02B19/0047Condensers, e.g. light collectors or similar non-imaging optics characterised by the use for use with a light source
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21LIGHTING
    • F21YINDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
    • F21Y2115/00Light-generating elements of semiconductor light sources
    • F21Y2115/30Semiconductor lasers
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B2207/00Coding scheme for general features or characteristics of optical elements and systems of subclass G02B, but not including elements and systems which would be classified in G02B6/00 and subgroups
    • G02B2207/113Fluorescence
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58Optical field-shaping elements
    • H01L33/60Reflective elements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/005Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping
    • H01S5/0087Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping for illuminating phosphorescent or fluorescent materials, e.g. using optical arrangements specifically adapted for guiding or shaping laser beams illuminating these materials
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/30Structure or shape of the active region; Materials used for the active region
    • H01S5/3013AIIIBV compounds

Definitions

  • the present invention relates to a phosphor element, a method of manufacturing the same, and a lighting device that emits fluorescent light.
  • a white light source combining a blue laser or an ultraviolet laser with a phosphor.
  • the light density of the excitation light can be increased, and by concentrating a plurality of laser lights on the phosphor, the light intensity of the excitation light can be increased.
  • the luminous flux and the luminance can be simultaneously increased without changing the light emitting area.
  • a white light source combining a semiconductor laser and a phosphor has been attracting attention as a light source replacing the LED.
  • the fluorescent glass used in automotive headlights is Nippon Electric Glass Co., Ltd.'s "Lumiface” fluorescent glass, the National Research and Development Agency of Materials and Materials, Tamura Corporation, and Lightwave's YAG single crystal fluorescent glass.
  • the body is considered.
  • the width of the phosphor increases from the incident surface to the emission surface.
  • the angle of inclination of the side surface of the phosphor is 15 degrees or more and 35 degrees or less.
  • a metal film is formed to accommodate the phosphor in a resin case and allow the inner surface of the case to function as a reflector portion.
  • the phosphor is fixed to the bottom surface of the case by a sealing resin, and the side surface of the phosphor is covered with air.
  • the width of the phosphor increases from the incident surface to the emission surface, and the phosphor is accommodated in the through hole of the heat radiation member. Are bonded to the surface of the through-hole with a glass paste.
  • excitation light is incident on the phosphor, the fluorescence and the excitation light are reflected and changed in direction in the phosphor, and emitted as white light from the phosphor.
  • excitation light is made incident from the entrance surface of the phosphor, and excitation light and fluorescence are emitted from the exit surface opposite to the entrance surface, so that the optical path cannot be changed.
  • excitation light and fluorescence are emitted from the exit surface opposite to the entrance surface, so that the optical path cannot be changed.
  • the object of the present invention is to increase the fluorescence intensity of emitted light and suppress color unevenness of emitted white light when exciting light is incident on the reflective phosphor element to generate fluorescence.
  • Another object of the present invention is to provide a manufacturing method which facilitates heat radiation from a phosphor portion when manufacturing a reflective phosphor element.
  • the phosphor element according to the present invention is a phosphor section having an excitation light incident surface, a facing surface and a side surface facing the incident surface, and at least a part of the excitation light incident on the incident surface.
  • a phosphor part that converts the light into fluorescent light and emits the fluorescent light from the incident surface;
  • a reflecting film is provided, and the area of the incident surface of the phosphor section is larger than the area of the facing surface.
  • the present invention also relates to a lighting device, comprising: a light source that oscillates a laser beam; and the phosphor element.
  • the present invention is a phosphor portion having an incident surface of the excitation light, an opposing surface and a side surface facing the incident surface, and converts at least a part of the excitation light incident on the incident surface into fluorescent light.
  • a phosphor portion that emits the fluorescent light from the incident surface; and an integral reflecting film that covers the phosphor portion, wherein the area of the incident surface of the phosphor portion is greater than the area of the facing surface.
  • a method of manufacturing a large phosphor element Joining the second main surface of the phosphor substrate having a first main surface and a second main surface to a handle substrate, Forming the phosphor portion by processing the first main surface of the phosphor substrate to form the opposing surface and the side surface; A step of forming the reflection film so as to cover the facing surface and the side surface; and a step of separating the phosphor section from the handle substrate.
  • the fluorescent element which injects excitation light with respect to the incident surface of a fluorescent substance part, and emits excitation light and fluorescence from an incident surface, the fluorescence intensity of emitted light is maintained high and color unevenness is suppressed. can do.
  • an integral reflection film can be simultaneously formed of the same material without discontinuity, whereby heat radiation from the reflection film can be promoted.
  • Patent Document 6 a total reflection film and a reflection layer are formed on the main surface of a flat phosphor layer, and the width of the phosphor layer is constant.
  • Patent Document 7 a reflection film is provided on a side surface of a ceramic phosphor, and a taper is provided on a side surface of a phosphor layer.
  • the reflecting portion is plate-shaped and does not have a laminated structure with a low refractive index layer. Therefore, assuming that Patent Documents 6 and 7 are combined, a taper is provided on the side surface of the phosphor layer, a reflection film is provided on the side surface, and a low refractive index layer and a reflection film are provided on the main surface of the phosphor layer. Will be provided.
  • this structure the effect of the present invention cannot be obtained although the result is as shown in FIG. 4 described later.
  • FIG. 1A is a perspective view illustrating a phosphor element 1 according to an embodiment of the present invention
  • FIG. 2B is a cross-sectional view of the phosphor element 1.
  • (A) is a schematic diagram illustrating a light propagation path in the phosphor element 1
  • (b) is a schematic diagram illustrating a light propagation path in the phosphor element 11 of the comparative example.
  • (A) is a schematic diagram showing a light propagation path in the phosphor element 1
  • (b) is a schematic diagram showing a light propagation path in the phosphor element 21 of the comparative example. It is a schematic diagram which shows the propagation path of the light in the fluorescent element 26 of a control example.
  • FIG. 1A is a perspective view illustrating a phosphor element 1 according to an embodiment of the present invention
  • FIG. 2B is a cross-sectional view of the phosphor element 1.
  • (A) is a schematic diagram illustrating a light propagation path in the phospho
  • FIG. 9 is a cross-sectional view illustrating a phosphor element 31 according to another embodiment of the present invention. It is a perspective view showing phosphor element 41 concerning other embodiments of the present invention.
  • FIG. 4 is a cross-sectional view of a phosphor element 41.
  • (A) shows a state in which a phosphor substrate 51 made of a phosphor is joined to a handle substrate 53, and
  • (b) shows a state in which a plurality of phosphor portions 2 are formed by processing the phosphor substrate.
  • FIG. 4 is a perspective view showing a state in which a low refractive index layer 54 is provided on a bonding layer 52 and a phosphor section 2.
  • FIG. 3 is a perspective view showing a state in which a reflection film 55 is provided on a low refractive index layer 54. It is sectional drawing which shows the phosphor element 61 which concerns on further another embodiment typically. It is sectional drawing which shows typically the fluorescent element 61A which concerns on another embodiment. It is sectional drawing which shows the phosphor element 61B which concerns on still another embodiment typically. 5 is a graph showing the relationship between the power efficiency of each phosphor element and the taper angle.
  • the phosphor section 2 includes an incident surface 2a, an exit surface 2b, and four side surfaces 2c.
  • the phosphor portion has a substantially trapezoidal shape, and the angle ⁇ of the side surface 2c with respect to the incident surface 2a is an acute angle smaller than 90 °.
  • the area AI of the incident surface 2a is larger than the area AR of the opposing surface 2b.
  • a low-refractive-index layer 3b is provided on the side surface 2c of the phosphor section 2, and a low-refractive-index layer 3a is provided on the opposing surface 2b.
  • the low-refractive-index layers 3a and 3b form an integrated low-refractive-index layer.
  • the refractive index layer 3 is formed.
  • the low refractive index layer 3 covers the entire surface of the side surface 2c and the opposing surface 2b of the phosphor section 2 with the same material.
  • a reflective film 4a is provided on the low refractive index layer 3a
  • a reflective film 4b is provided on the low refractive index layer 3b, and the reflective films 4a and 4b are integrally formed of the same material. 4 are formed.
  • the reflection film 4 covers the low refractive index layer 3 over the entire surface.
  • the fluorescent light emitted from the phosphor particles in the direction of the incident surface 2a is emitted from the incident surface 2a as it is.
  • the fluorescent light emitted from the phosphor particles toward the opposing surface 2b is reflected by the opposing surface and exits from the incident surface 2a as it is.
  • the fluorescent light emitted obliquely as shown by arrows C and D is reflected by the reflection film 4b and emitted from the incident surface 2a as shown by arrows E and B.
  • the area AI of the incident surface of the phosphor section 2 is larger than the area AR of the opposing surface, and the side surface 2c is inclined, the direction of the reflected light E is reduced by the inclination angle ⁇ . 2a.
  • the number of reflections until the fluorescent light exits from the incident surface 2a can be reduced.
  • the width of the phosphor section 12 is constant.
  • the low refractive index layers 13a and 13b are provided on the side surface 12c and the opposing surface 12b of the phosphor element 12, and the low refractive index layers 13a and 13b form the integral low refractive index layer 13 with the same material. doing.
  • a reflection film 14b is provided on the low-refractive-index layer 13b, and a reflection film 14a is provided on the low-refractive-index layer 13a.
  • the reflection films 14a and 14b are integrally formed of the same material. Has formed.
  • the fluorescent light F emitted from the phosphor particles 5 toward, for example, the side surface 12c is reflected as it is as G and returns to the particles 5, so that it is not reflected from the incident surface 12a. That is, since the side surface 12c and the incident surface 12a are perpendicular to each other, the function of directing the direction of the fluorescent light toward the incident surface 12a when reflecting the fluorescent light does not work. As a result, the number of fluorescence reflections increases.
  • the reflectance at the reflective film is not 100%, and a part of the fluorescent light is absorbed by the reflective film. Therefore, if the number of reflections is large, the fluorescent light is attenuated, and the temperature rise of the reflective film deteriorates the exhaust heat from the phosphor part. As a result, the temperature of the phosphor increases, and the fluorescence intensity decreases.
  • the fluorescence H1 is not totally reflected by the low refractive index layer, Is refracted at the interface between the low refractive index layer 3 and the low refractive index layer 3a, is reflected by the reflection film 4a like H2, is refracted again at the interface between the fluorescent part 2 and the low refractive index layer 3a, and propagates through the fluorescent part 2. Then, the light exits from the incident surface 2a.
  • the shape of the phosphor part 2 is the same as that of the phosphor part 2 of FIG.
  • the low refractive index layer 23 is provided on the side surface 2c of the phosphor element 2.
  • the low refractive index layer is not provided on the opposing surface 2b of the phosphor section 2.
  • a reflective film 24b is provided on the low refractive index layer 23, and a reflective film 24a is provided on the facing surface 2b of the phosphor section 2, and the reflective films 24a and 24b are integrated.
  • the reflection film 24 is formed.
  • the fluorescent light reflected from the phosphor particles 5 toward the facing surface as shown by the arrow H1 is reflected by the reflection film 24a, propagates through the phosphor portion 2 as shown by the arrow H2, and is incident. The light exits from the surface 2a.
  • the fluorescent light emitted obliquely from the phosphor particles 5 toward the opposing surface as shown by the arrow J satisfies the total reflection condition in the low refractive index layer 3a.
  • the light is totally reflected as indicated by an arrow J1 and further reflected at the interface between the low refractive index layer 3b and the phosphor portion 2 as indicated by an arrow J2, and exits from the incident surface 2a.
  • the fluorescent light emitted obliquely from the phosphor particles 5 toward the opposing surface as shown by the arrow J is reflected on the opposing surface 2b.
  • the light is reflected by the film 24a as indicated by an arrow J3, is further totally reflected by the interface between the low refractive index layer 23 and the phosphor part 2 as indicated by an arrow J4, and is emitted from the incident surface 2a.
  • the amount of light energy absorbed by the reflection film 24a is large, and the temperature of the reflection film 24a rises, so that the exhaust heat of the phosphor part 2 is deteriorated and the temperature rises. Therefore, the intensity of the fluorescent light emitted from the incident surface 2a decreases due to the temperature quenching of the phosphor.
  • the shape of the phosphor part 2 is the same as that of the phosphor part 2 in FIG.
  • the low refractive index layer 27 is provided on the opposing surface 2b of the phosphor element 2, but the low refractive index layer is not provided on the side surface 2c.
  • the reflection films 4a and 4b form an integral reflection film 4.
  • the fluorescence reflected from the phosphor particles 5 toward the opposite surface side as shown by the arrow H1 is reflected by the reflection film 4a, propagates through the phosphor portion 2 as shown by the arrow H2, and is incident. The light exits from the surface 2a.
  • the fluorescent light emitted obliquely from the phosphor particles 5 toward the opposing surface as shown by the arrow J is totally reflected as shown by the arrow J1 and further has a low refractive index layer.
  • the light is totally reflected at the interface between the fluorescent material portion 3b and the phosphor portion 2 as indicated by an arrow J2, and is emitted from the incident surface 2a.
  • the fluorescent light emitted obliquely from the phosphor particles 5 toward the side as indicated by the arrow J is totally reflected by the reflection film 4b on the side as indicated by the arrow J5.
  • the light is reflected and exits from the incident surface 2a.
  • the amount of light energy absorbed is large, and the temperature of the reflection film 4b and the reflection film 4a connected to the reflection film 4b rises, so that the exhaust heat of the phosphor part 2 is deteriorated. causess temperature rise. Therefore, the intensity of the fluorescence emitted from the incident surface 2a decreases with time due to the temperature quenching of the phosphor.
  • the phosphor element of the present invention is a phosphor portion having an incident surface of excitation light, a facing surface facing the incident surface, and a side surface, wherein at least a part of the excitation light incident on the incident surface is fluorescent. And a phosphor part for emitting the fluorescent light from the incident surface.
  • the entire excitation light is converted into fluorescent light, only the fluorescent light is emitted from the incident surface.
  • the fluorescence and the excitation light can be emitted from the incident surface.
  • the phosphor constituting the phosphor section is not limited as long as it can convert excitation light into fluorescence, but may be phosphor glass, phosphor single crystal, or phosphor polycrystal.
  • a scattering material may be added to the phosphor to scatter the excitation light and the fluorescence, or holes may be provided in the phosphor. In this case, since the light incident on the phosphor is scattered in the phosphor, the emitted light (excitation light and fluorescence) is scattered, and the scattering angle is increased.
  • the scattering angle of the phosphor can be measured by, for example, a scatterometer “Mini-Diff” manufactured by Cybernet Systems.
  • the scattering angle is defined as the full width angle that is 1 / e 2 of the peak value from the transmission spectrum of the emitted light. At this time, the scattering angle is preferably 5 degrees or more, and more preferably 10 degrees or more.
  • the upper limit of the scattering angle of the phosphor constituting the phosphor portion is not particularly limited, but may be equal to or less than the numerical aperture (NA) of the emitted light, and may be equal to or less than 80 degrees from a practical viewpoint.
  • NA numerical aperture
  • Phosphor glass is obtained by dispersing rare earth element ions in a base glass.
  • the base glass includes silica, boron oxide, calcium oxide, lanthanum oxide, barium oxide, zinc oxide, phosphorus oxide, aluminum fluoride, magnesium fluoride, calcium fluoride, strontium fluoride, and oxide glass containing barium chloride. Can be illustrated.
  • the rare earth element ions dispersed in the phosphor glass Tb, Eu, Ce, and Nd are preferable, but La, Pr, Sc, Sm, Er, Tm, Dy, Gd, and Lu may be used.
  • the phosphor monocrystal, Y 3 Al 5 O 12, Ba 5 Si 11 A l7 N 25, Tb 3 Al 5 O 12 and YAG can be exemplified.
  • a part of Y (yttrium) of YAG may be substituted by Lu.
  • As a doping component to be doped into the phosphor single crystal rare earth ions are preferable, and Tb, Eu, Ce, and Nd are particularly preferable. However, La, Pr, Sc, Sm, Er, Tm, Dy, Gd, and Lu are preferable. There may be.
  • Examples of the polycrystalline phosphor include TAG (terbium aluminum garnet), sialon, nitride, BOS (barium orthosilicate), and YAG (yttrium aluminum garnet). A part of Y (yttrium) of YAG may be substituted by Lu.
  • TAG terbium aluminum garnet
  • BOS barium orthosilicate
  • YAG yttrium aluminum garnet
  • Lu Lu
  • rare earth ions are preferable, and Tb, Eu, Ce, and Nd are particularly preferable.
  • La, Pr, Sc, Sm, Er, Tm, Dy, Gd, and Lu are preferable. Is also good.
  • the phosphor element of the present invention may be a non-grating type phosphor element that does not include a grating (diffraction grating) in the phosphor section, and the grating may be provided in the phosphor section.
  • the phosphor section has at least an excitation light incident surface, a facing surface, and a side surface.
  • the side surface is a surface extending between the incident surface and the facing surface.
  • the shape of the phosphor is not particularly limited.
  • the shapes of the incident surface and the opposing surface of the phosphor portion may be, for example, a polygon such as a circle, an ellipse, a triangle, a square, and a hexagon.
  • an integrated low-refractive-index layer on the side surface and the opposing surface of the phosphor section, and having a lower refractive index than the phosphor section.
  • the low-refractive-index layer is provided on the side surface and the opposing surface of the phosphor portion, but the integral low-refractive-index layer means that the low-refractive-index layers are continuous with each other. I do.
  • the low-refractive-index layer does not need to cover the entire side surface and the entirety of the opposing surface, and it is acceptable that a part of the side surface and a part of the opposing surface are exposed without being covered by the low-refractive index layer. Shall be.
  • it is preferable that 90% or more of the entire area of the side surface and 90% or more of the entire area of the opposing surface are covered with the low refractive index layer. More preferably, it is covered by a rate layer.
  • Examples of the material of the low refractive index layer include aluminum oxide, magnesium oxide, aluminum nitride, tantalum oxide, silicon oxide, silicon nitride, aluminum nitride, and silicon carbide. From the viewpoint of heat dissipation, the material of the low refractive index layer is most preferably aluminum oxide or magnesium oxide.
  • the refractive index of the low refractive index layer is lower than the refractive index of the phosphor, but in this case, the total reflection due to the refractive index difference between the phosphor and the low refractive index layer can be utilized, and The reflected light component can be reduced, and light can be prevented from being absorbed by reflection by the reflection film.
  • the refractive index of the low refractive index layer is preferably 1.7 or less, and more preferably 1.6 or less. There is no particular lower limit for the refractive index of the low refractive index layer, and it is 1 or more, but it is practically 1.4 or more.
  • the difference between the refractive index of the phosphor part and the refractive index of the low refractive index layer is preferably 0.1 or more, and more preferably 0.2 or more. Further, the refractive index of the phosphor part is preferably from 1.4 to 1.9, more preferably from 1.65 to 1.85.
  • the thickness of the low refractive index layer is preferably 1 ⁇ m or less, which can reduce the influence on heat radiation. Further, from the viewpoint of suppressing the absorption by the reflective film, the thickness of the low refractive index layer is preferably 0.05 ⁇ m or more.
  • the phosphor element of the present invention has an integral reflecting film covering the surface of the low refractive index layer.
  • the fact that the reflection films are integral means that the reflection films are continuous with each other. However, it is not necessary that the reflection film covers the entire side surface and the entire opposing surface, and it is acceptable that the low refractive index layer is exposed without being covered by the reflection film on a part of the side surface and a part of the opposing surface. It shall be. However, also in this case, it is preferable that 90% or more of the total area of the side surfaces and 90% or more of the total area of the opposing surfaces are covered with the reflective film, and the entire side surfaces and the opposing surfaces are coated with the reflective film. More preferably, it is performed.
  • the material of the reflection film is not particularly limited as long as it reflects the excitation light and the fluorescence that have passed through the phosphor layer.
  • the reflection film does not need to totally reflect the excitation light, and may transmit some or all of the excitation light.
  • the reflection film is a metal film or a dielectric multilayer film, and may be a combination thereof.
  • the reflective film is a metal film
  • the light can be reflected in a wide wavelength range, the incident angle dependence can be reduced, and the durability against temperature and weather resistance are excellent.
  • the reflective film is a dielectric multilayer film
  • since there is no absorption, light incident at a specific angle can be made 100% reflected light without loss, and can be composed of an oxide film.
  • peeling can be prevented.
  • a feature that complements both can be provided.
  • the reflectivity of the excitation light by the reflection film is set to 80% or more, preferably 95% or more.
  • the dielectric multilayer film is a film in which a high refractive material and a low refractive material are alternately laminated.
  • the high refractive index include TiO 2 , Ta 2 O 3 , Ta 2 O 3 , ZnO, Si 3 N 4 , and Nb 2 O 5 .
  • the low refraction material include SiO 2 , MgF 2 , and CaF 2 .
  • the number of layers and the total thickness of the dielectric multilayer film are appropriately selected depending on the wavelength of the fluorescence to be reflected.
  • the material of the metal film is preferably as follows. (1) Single layer film of Al, Ag, Au, etc. (2) Multilayer film of Al, Ag, Au, etc.
  • the thickness of the metal film is not particularly limited as long as it can reflect fluorescence, but is preferably 0.05 ⁇ m or more. 1 ⁇ m or more is more preferable. Further, in order to increase the adhesion between the metal film and the base material, it can be formed via a metal film of Ti, Cr, Ni, or the like.
  • the area of the incident surface of the phosphor portion is larger than the area of the opposing surface.
  • the area AI of the incident surface 2a is larger than the area AR of the opposing surface 2b, whereby the intensity of the fluorescent light emitted from the incident surface can be improved as described above.
  • the ratio of the area AI of the incident surface 2a / the area AR of the opposing surface 2b is preferably 1.2 or more, and more preferably 1.47 or more.
  • the ratio of the area AI of the incident surface 2a / the area AR of the opposing surface 2b is preferably 27.2 or less, and more preferably 11 or less.
  • the inclination angle ⁇ of the side surface with respect to the incident surface of the phosphor portion is preferably 50 ° or more and 85 ° or less, more preferably 60 ° or more and 80 ° or less.
  • the scattering material may be dispersed in the phosphor material, but particularly preferably, the scattering material is not dispersed in the phosphor material constituting the phosphor portion.
  • the thickness (the distance between the incident surface and the opposing surface) T (FIGS. 1 and 7) of the phosphor portion is preferably 290 ⁇ m or more, and more preferably 300 ⁇ m or more, in order to improve the efficiency of taking out the fluorescence on the emission side. , 450 ⁇ m or more. Further, the thickness may be 800 ⁇ m or more. However, the thickness is preferably 3.0 mm or less from the viewpoint of miniaturization, and 1.5 ⁇ m or less from the viewpoint of heat radiation.
  • a partially transparent film made of a transparent material that transmits excitation light and fluorescence can be provided on the incident surface of the phosphor section.
  • the partially transmitting film is a film that reflects a part of the excitation light and transmits the rest.
  • the reflectance of the partially transmitting film with respect to the excitation light is 9% or more, and preferably 50% or less.
  • Examples of the material of such a partial transmission film include a metal film for reflection and a dielectric multilayer film described above.
  • the incident surface side support substrate can be provided on the incident surface of the phosphor section, so that the heat radiation effect from the phosphor section can be further improved.
  • an opposing surface side support substrate can be provided on the main surface on the opposing surface side of the heat radiating substrate, whereby the heat radiating effect from the heat radiating substrate can be further improved.
  • each support substrate a material having a thermal conductivity (25 ° C.) of 200 W / mK or more is preferable, and a material of 300 W / m ⁇ K or more is particularly preferable. Although there is no particular upper limit on the thermal conductivity of this material, it can be set to 500 W / m ⁇ K or less from the viewpoint of practical availability.
  • each support substrate is preferably transparent or translucent to transmit light.
  • the incident surface side support substrate can be provided with a window for irradiating the incident surface with the excitation light.
  • the material of the incident surface side support substrate does not need to be transparent or translucent.
  • the material of each support substrate is transparent or translucent
  • the material of the support substrate is preferably alumina, aluminum nitride, silicon carbide, quartz, or glass.
  • each support substrate When the material of each support substrate is not transparent or translucent, the material of the support substrate is alumina, aluminum nitride, silicon carbide, crystal, glass, copper, silver, gold, aluminum, or an alloy material containing the above metal Is preferred.
  • the material of each support substrate may be the same or different.
  • a transparent or translucent support substrate 7 is formed on the incident surface 2a of the phosphor section 2.
  • the support substrate 7 is wider than the phosphor part 2, and the low refractive index layer 3c and the reflection film 4c are extended thereon.
  • a heat dissipation substrate is provided in contact with the reflection film.
  • the thermal conductivity (25 ° C.) of the material of the heat radiating substrate is preferably 200 W / mK or more. Although there is no particular upper limit on the thermal conductivity, it is preferably 500 W / m ⁇ K or less, more preferably 350 W / m ⁇ K or less, from the viewpoint of practical availability.
  • gold, silver, copper, aluminum, or an alloy containing these metals is preferable.
  • ceramics such as silicon carbide and aluminum nitride are preferable. In the case of ceramics, the coefficient of thermal expansion with the phosphor can be adjusted to some extent. Therefore, it is advantageous in that reliability such as prevention of cracks and cracks due to thermal stress is improved.
  • the heat radiation substrate When the heat radiation substrate is made of metal, it may be a metal plating film.
  • the type of the metal plating film may be an electrolytic plating film or an electroless plating film.
  • the metal plating film is made of a metal having a thermal conductivity (25 ° C.) of 200 W / mK or more.
  • gold, silver, copper, aluminum, or an alloy containing these metals is particularly preferable.
  • the phosphor part 2, the low refractive index layer 3, and the reflection film 4 are the same as the phosphor element of FIG.
  • the phosphor portion 2, the low refractive index layer 3, and the reflection film 4 are fixed and integrated in the concave portion 8c of the heat dissipation substrate 8.
  • 8a is a thin plate portion in contact with the reflection film 4a
  • 8b is a flange portion having a constant thickness, which is in contact with the reflection film 4b.
  • the concave portion of the heat dissipation board can be formed by machining or laser processing.
  • the heat radiating substrate can be formed by a plating method or a thermal spraying method.
  • the heat radiating substrate can be bonded to the phosphor element by a sintered bonding material.
  • the heat radiating substrate can be joined to the phosphor element by a sintered joining material.
  • the type of the metal plating film may be an electrolytic plating film or an electroless plating film.
  • the metal plating film is made of a metal having a thermal conductivity (25 ° C.) of 200 W / mK or more.
  • As the kind of metal constituting the metal plating film of the phosphor part gold, silver, copper, aluminum, or an alloy containing these metals is particularly preferable.
  • a base film for plating may be provided between the reflection film and the heat dissipation substrate.
  • the base film may be Ni, Cr, Ti, or an alloy containing these metals.
  • the illumination device of the present invention includes a light source that oscillates a laser beam and the phosphor element.
  • a semiconductor laser made of a GaN material having high reliability for exciting the phosphor for illumination is suitable.
  • a light source such as a laser array arranged one-dimensionally can also be realized. It may be a super luminescence diode, a semiconductor optical amplifier (SOA) or an LED. Also, the excitation light from the light source can be made incident on the phosphor element through the optical fiber.
  • SOA semiconductor optical amplifier
  • the method for generating white light from the semiconductor laser and the phosphor is not particularly limited, but the following method is conceivable.
  • a method of generating white light by generating yellow fluorescence with a blue laser and a phosphor A method of generating white light by generating red and green fluorescence with a blue laser and a phosphor A method of generating white light by generating green fluorescent light
  • the production method of the present invention Joining the second main surface of the phosphor substrate having a first main surface and a second main surface to a handle substrate, Forming a phosphor portion by processing the first main surface of the phosphor substrate to form an opposing surface and side surfaces, A step of forming a reflective film so as to cover the opposing surface and the side surface; and a step of separating the phosphor section from the handle substrate.
  • a large number of specific phosphor elements can be simultaneously formed in one phosphor substrate, so that mass productivity can be improved.
  • a step of forming a low-refractive-index layer on the side surface and the opposing surface of the phosphor section is provided, and a reflective film is formed on the low-refractive-index layer. According to this manufacturing method, the phosphor element according to the present invention can be obtained with high productivity.
  • a bonding layer 52 is formed on a handle substrate 53 and is opposed to the phosphor plate 51.
  • the surface 51b is joined.
  • a phosphor portion having a required form can be formed.
  • the phosphor section 2 having a desired shape is formed on the bonding layer 52.
  • Examples of such a processing method include dicing, slicing, micro grinder, laser processing, water jet, and micro blast.
  • a low refractive index layer 54 is formed on the phosphor section 2 and on the bonding layer 52.
  • a reflection film 55 is formed on the low refractive index layer 54.
  • each phosphor element 1 can be cut into a predetermined size.
  • a plurality of phosphor elements 1 can be used as a phosphor element array without being divided.
  • the method of forming the low refractive index layer and the reflective film is not particularly limited, but an evaporation method, a sputtering method, and a CVD method are preferable. In the case of a vapor deposition method, a film can be formed by adding ion assist.
  • a reflective film (and a low-refractive-index layer if necessary) can be formed on the side surface and the opposing surface in one film-forming step.
  • the side surface and the opposing surface are orthogonal as shown in FIG. 2B, it is not possible to simultaneously form the reflective film and the low refractive index layer on the side surface and the opposing surface by one film formation.
  • the refractive index may be distributed or the number of steps may increase the cost, but this manufacturing method can solve the problem.
  • a scattering material is dispersed in the phosphor portion, and the thickness of the phosphor portion (the distance between the incident surface and the opposing surface) is 290 ⁇ m or more and 1.0 mm or less, and the incident surface Is 25 ° or more and 49 ° or less.
  • the scattering material is dispersed in the phosphor portion and the phosphor portion is relatively thin, it has been found that high luminous efficiency and low color unevenness can be realized even when ⁇ is small.
  • the thickness T (the distance between the incident surface and the facing surface) of the phosphor portion is more preferably 300 ⁇ m or more, and further preferably 650 ⁇ m or less.
  • the inclination angle ⁇ of the side surface with respect to the incident surface is more preferably 30 ° or more, and further preferably 46 ° or less.
  • the scattering material When a scattering material is dispersed in the phosphor portion, the scattering material preferably does not absorb the excitation light and the fluorescence and has a large difference in refractive index from the phosphor.
  • Al 2 O 3 , SiO 2 , TiO 2 and ZrO 2 can be exemplified.
  • a scattering material is not contained in the phosphor part, the interval between the incident surface and the opposing surface is 290 ⁇ m or more and 1.0 mm or less, and the inclination angle of the side surface with respect to the incident surface is 25 ° or more and 70 ° or less.
  • the scattering material is dispersed in the phosphor part and the phosphor part is relatively thin, not only when ⁇ is 50 ° or more but also when ⁇ is small, high luminous efficiency and low color unevenness are obtained. Has been found to be possible.
  • the inclination angle of the side surface with respect to the incident surface is preferably 25 ° or more and 42 ° or less, and more preferably 49 ° or more and 65 ° or less. More preferably, the inclination angle of the side surface with respect to the incident surface is 40 ° or less.
  • the behavior is different from the case where the phosphor portion and the scattering material are dispersed. .
  • FIG. 11 is a cross-sectional view schematically showing a phosphor element 61 according to the present embodiment.
  • the phosphor part 62 includes an incident surface 62a, an exit surface 62b, and four side surfaces 62c.
  • the phosphor portion In the cross section of the phosphor portion, the phosphor portion is substantially trapezoidal, and the angle ⁇ of the side surface 62c with respect to the incident surface 62a is an acute angle smaller than 90 °, preferably 49 to 25 °.
  • the area AI of the incident surface 2a is larger than the area AR of the opposing surface 2b.
  • a large number of scattering materials 63 are dispersed in the phosphor part 62.
  • a low-refractive-index layer 3b is provided on a side surface 62c of the phosphor section 62, and a low-refractive-index layer 3a is provided on the opposing surface 62b.
  • the low-refractive-index layers 3a and 3b form an integrated low-refractive-index layer.
  • the refractive index layer 3 is formed.
  • the low refractive index layer 3 covers the entire side surface 62c and the opposing surface 62b of the phosphor portion 62.
  • the reflection film 4a is provided on the low-refractive-index layer 3a
  • the reflection film 4b is provided on the low-refractive-index layer 3b.
  • the reflection films 4a and 4b form an integral reflection film 4. Have been.
  • the reflection film 4 covers the low refractive index layer 3 over the entire surface.
  • excitation light incident as shown by an arrow A impinges on many phosphor particles 5 dispersed in the phosphor part 62. Then, fluorescence is emitted from each phosphor particle 5 as indicated by arrows K1, K3, and K5. At this time, the fluorescent particles tend to emit fluorescence uniformly in all directions. In addition, the fluorescence emitted from the phosphor particles is further scattered in all directions by the scattering material, and the fluorescence tends to be more uniform.
  • the fluorescent light emitted from the phosphor particles in the direction of the incident surface 62a is emitted from the incident surface 62a as it is. Further, the fluorescent light emitted from the phosphor particles toward the facing surface 62b as shown by an arrow K3 is refracted by the low refractive index layer 3a, reflected by the reflective film 4a, refracted by the low refractive index layer 3a again, and The light exits from the incident surface 2a as shown in FIG. Fluorescent light emitted obliquely as indicated by arrows K1 and K5 is totally reflected by the low refractive index layers 3a and 3b and exits from the incident surface 2a as indicated by arrows K2 and K6.
  • the areas AI of the incident surface of the phosphor portion 62 is larger than the area AR of the opposing surface and the side surface 62c is inclined, the directions of the reflected lights K2 and K6 are changed by the inclination angle ⁇ . It inclines toward the inclined surface 2a. As a result, the number of reflections until the excitation light exits from the incident surface 62a can be reduced. Further, due to the presence of the low refractive index layers 3a and 3b, light absorption due to reflection on the reflection film 4 and a rise in temperature of the reflection film can be suppressed.
  • the transparent or translucent support substrate 7 is formed on the incident surface 62a of the phosphor section 62.
  • the phosphor part 62, the low refractive index layer 3, and the reflection film 4 are the same as the phosphor element 61 of FIG.
  • the phosphor portion 62, the low refractive index layer 3, and the reflection film 4 are fixed and integrated in the concave portion 8c of the heat dissipation substrate 8.
  • 8a is a thin plate portion in contact with the reflection film 4a
  • 8b is a flange portion having a constant thickness, which is in contact with the reflection film 4b.
  • the phosphor element 41 shown in FIGS. 6 and 7 was manufactured by the manufacturing method described with reference to FIGS. Specifically, a phosphor plate 51 made of YAG (yttrium aluminum garnet) polycrystal having a thickness of 1 mm and a diameter of 4 inches doped with Ce and doped with a ceramic scattering material was prepared. A sapphire wafer having a thickness of 0.3 mm and a diameter of 4 inches was prepared as the handling substrate 53. The phosphor plate 51 was bonded to the handling substrate 53 using the thermoplastic resin 52 at 100 ° C., and then returned to room temperature and integrated (FIG. 8A).
  • YAG yttrium aluminum garnet
  • setback processing by dicing was performed using a blade having a width of 100 ⁇ m and # 800.
  • the phosphor plate was rotated 90 degrees, and setback processing was similarly performed by dicing to form the phosphor portion 2 (FIG. 8B).
  • the width of the incident surface was 2 mm
  • the thickness was 1 mm
  • the inclination ⁇ of the side surface with respect to the incident surface was 63.5 °.
  • the area AI of the incident surface is 4 mm 2
  • the area of the facing surface is 1 mm 2 .
  • the side surface and the opposing surface of each phosphor part 2 were processed surfaces by dicing, and the arithmetic average roughness Ra of the side surface and the opposing surface was estimated to be 10 ⁇ m.
  • a low-refractive-index layer 54 of Al 2 O 3 was formed to a thickness of 0.5 ⁇ m on the facing surface 2b and the side surface 2c of the phosphor section by sputtering (see FIG. 9). Further, a reflective film 55 made of an Al alloy film was formed on the low refractive index layer 54 with a thickness of 0.5 ⁇ m (FIG. 10). After the film formation, the substrate was heated to 100 ° C. with a hot plate, the phosphor element 1 as shown in FIG. 1 was separated from the handling substrate 53, and the adhesive was washed with an organic solvent.
  • a heat dissipation substrate 8 made of oxygen-free copper having a width of 20 mm ⁇ a length of 20 mm and a thickness of 2 mm was prepared.
  • a groove was formed in the center of the heat dissipation substrate 8, and the phosphor element 1 was buried, thereby obtaining a phosphor element 41 shown in FIGS.
  • the white light output (average output) represents the time average of the total luminous flux.
  • the total luminous flux measurement is performed by using an integrating sphere (spherical luminometer) to turn on the light source to be measured and the standard light source for which the total luminous flux is priced at the same position, and to compare the light sources. Specifically, the measurement was performed using the method specified in JISC7801.
  • the output light was evaluated by a chromaticity diagram using a luminance distribution measuring device. Then, in the chromaticity diagram, when the median value is within the range of x: 447 ⁇ 0.005 and y: 0.3553 ⁇ 0.005, “no color unevenness” is set. There is unevenness. "
  • Example 1 A phosphor element 21 having a cross section shown in FIG.
  • the fabrication method was the same as in Example 1.
  • the low-refractive-index layer 23 made of Al 2 O 3 was not formed on the opposing surface of the phosphor portion, but was formed only on the side surface by sputtering multiple times.
  • a reflective film 24 made of an Al alloy film was formed with a thickness of 0.5 ⁇ m on the low refractive index layer and the opposing surface.
  • the obtained device was fixed to the heat dissipation board 8 in the same manner as in Example 1.
  • the phosphor element 26 shown in FIG. 4 was manufactured by the manufacturing method described with reference to FIGS. Specifically, a phosphor plate 51 made of YAG (yttrium aluminum garnet) polycrystal having a thickness of 1 mm and a diameter of 4 inches doped with Ce and doped with a ceramic scattering material was prepared. A sapphire wafer having a thickness of 0.3 mm and a diameter of 4 inches was prepared as the handling substrate 53. The phosphor plate 51 was bonded to the handling substrate 53 using the thermoplastic resin 52 at 100 ° C., and then returned to room temperature and integrated (FIG. 8A).
  • YAG yttrium aluminum garnet
  • setback processing by dicing was performed using a blade having a width of 100 ⁇ m and # 800.
  • the phosphor plate was rotated 90 degrees, and setback processing was similarly performed by dicing to form the phosphor portion 2 (FIG. 8B).
  • the width of the incident surface was 2 mm
  • the thickness was 1 mm
  • the inclination ⁇ of the side surface with respect to the incident surface was 63.5 °.
  • the area AI of the incident surface is 4 mm 2 .
  • the side surface and the opposing surface of each phosphor part 2 were processed surfaces by dicing, and the arithmetic average roughness Ra of the side surface and the opposing surface was estimated to be 10 ⁇ m.
  • the low refractive index layer 27 made of Al 2 O 3 was formed by sputtering only on the opposing surface without being provided on the side surface of the phosphor portion.
  • a reflective film 4 made of an Al alloy film was formed with a thickness of 0.5 ⁇ m on the low refractive index layer and the side surfaces.
  • the substrate was heated to 100 ° C. with a hot plate, the phosphor element 26 as shown in FIG. 4 was separated from the handling substrate 53, and the adhesive was washed with an organic solvent.
  • a heat dissipation substrate 8 made of oxygen-free copper having a width of 20 mm ⁇ a length of 20 mm and a thickness of 2 mm was prepared. A groove was formed in the center of the heat radiating substrate 8, and the phosphor element was fixed in the concave portion of the heat radiating substrate 8, as shown in FIGS.
  • the phosphor element 61B shown in FIG. 13 was manufactured by the manufacturing method described with reference to FIGS. Specifically, a phosphor plate 51 made of YAG (yttrium aluminum garnet) polycrystal having a thickness of 1 mm and a diameter of 4 inches doped with Ce and doped with a ceramic scattering material was prepared. A sapphire wafer having a thickness of 0.3 mm and a diameter of 4 inches was prepared as the handling substrate 53. The phosphor plate 51 was bonded to the handling substrate 53 using the thermoplastic resin 52 at 100 ° C., and then returned to room temperature and integrated (FIG. 8A).
  • YAG yttrium aluminum garnet
  • setback processing by dicing was performed using a blade having a width of 100 ⁇ m and # 800.
  • the phosphor plate was rotated by 90 degrees and setback processing was similarly performed by dicing to form the phosphor portion 62 (FIG. 8B).
  • the width of the incident surface was 2 mm
  • the thickness was 0.29 mm
  • the inclination ⁇ of the side surface with respect to the incident surface was 25 °, 45 °, 49 °, 50 °, and 63.5 °.
  • the area AI of the incident surface is 4 mm 2 .
  • the side surface and the opposing surface of each phosphor portion 62 are surfaces processed by dicing, and the arithmetic average roughness Ra of the side surface and the opposing surface was estimated to be 10 ⁇ m.
  • a low-refractive-index layer 54 of Al 2 O 3 was formed to a thickness of 0.5 ⁇ m on the facing surface 62b and the side surface 62c of the phosphor section by sputtering (see FIG. 9). Further, a reflective film 55 made of an Al alloy film was formed on the low refractive index layer 54 with a thickness of 0.5 ⁇ m (FIG. 10). After the film formation, the substrate was heated to 100 ° C. with a hot plate, the phosphor element 61 as shown in FIG. 11 was separated from the handling substrate 53, and the adhesive was washed with an organic solvent.
  • a heat dissipation board 8 made of oxygen-free copper having a width of 20 mm, a length of 20 mm, and a thickness of 2 mm was prepared.
  • a groove was formed in the center of the heat dissipation substrate 8, and the phosphor element 61 was buried to obtain a phosphor element 61B shown in FIG.
  • Comparative Example 3 A phosphor element 21 having a cross section shown in FIG. 3B was produced in the same manner as in Comparative Example 1.
  • the manufacturing method was the same as in Comparative Example 1.
  • the ceramic scattering material was dispersed in the phosphor portion, and the inclination ⁇ of the side surface with respect to the incident surface was 45 °.
  • the obtained phosphor element was fixed to the heat dissipation substrate 8 in the same manner as in Example 1.
  • Comparative Example 4 A phosphor element having a cross section shown in FIG. 4 was produced in the same manner as in Comparative Example 2.
  • the manufacturing method was the same as Comparative Example 2.
  • the ceramic scattering material was dispersed in the phosphor portion, and the inclination ⁇ of the side surface with respect to the incident surface was 45 °.
  • the obtained phosphor element was fixed to the heat dissipation substrate 8 in the same manner as in Example 1.
  • Example 1 and Example 2 the inclination angle ⁇ of the side surface with respect to the incident surface was changed as shown in FIG.
  • the first embodiment is a phosphor element having a configuration as shown in FIGS. 1, 6, and 7, in which the scattering material is not dispersed in the phosphor portion.
  • Example 2 is a phosphor element having a form as shown in FIGS. 11 and 13, in which a scattering material is dispersed in the phosphor portion.
  • the inclination angle ⁇ was changed to 85 °, 63.5 °, 50 °, 49 °, 45 °, 39 °, 31 °, and 25 °.
  • FIG. 14 shows the power efficiency of the obtained white light.
  • the power efficiency may be particularly high particularly when the inclination angle ⁇ is 25 ° or more and 49 ° or less. all right.
  • the power efficiency was particularly high when the inclination angle was in the range of 25 ° or more and 70 ° or less. Particularly preferably, the power efficiency is increased when the inclination angle ⁇ of the side surface with respect to the incident surface is 25 ° or more, 42 ° or less, or 49 ° or more and 65 ° or less.

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Abstract

[Problem] To increase the fluorescence intensity of emitted light and minimize color irregularity in emitted white light when excitation light is made to enter a reflective phosphor element and fluorescence is generated. [Solution] A phosphor element 1 is provided with: a phosphor section 2 that is provided with an entry surface 2a for excitation light, a facing surface 2b facing the entry surface, and a side surface 2c, that converts at least some excitation light entering the entry surface into fluorescence, and that causes the fluorescence to be emitted from the entry surface; a single low refractive index layer 3 that is present on the side surface 2c and the facing surface 2b of the phosphor section 2, and that has a lower refractive index than the refractive index of the phosphor section 2; and a single reflective film 4 that covers the surface of the low refractive index layer 3. The area AI of the entry surface 2a of the phosphor section 2 is larger than the area AR of the facing surface 2b.

Description

蛍光体素子、その製造方法および照明装置Phosphor element, its manufacturing method and lighting device
 本発明は、蛍光体素子、その製造方法および蛍光を発光する照明装置に関するものである。 The present invention relates to a phosphor element, a method of manufacturing the same, and a lighting device that emits fluorescent light.
 最近、レーザ光源を用いた自動車用ヘッドライトの研究が盛んに行われており、その内の一つに、青色レーザあるいは紫外レーザと蛍光体を組み合わせた白色光源がある。レーザ光を集光することにより、励起光の光密度を高めることができる上に、複数のレーザ光を蛍光体上に重ねて集光することで、励起光の光強度も高めることができる。これによって、発光面積を変えずに光束と輝度とを同時に大きくすることができる。このため、半導体レーザと蛍光体とを組み合わせた白色光源が、LEDに替わる光源として注目されている。例えば、自動車用ヘッドライトに使用する蛍光体ガラスは、日本電気硝子株式会社の蛍光体ガラス「ルミファス」や国立研究開発法人物質・材料研究機構と株式会社タムラ製作所、株式会社光波のYAG単結晶蛍光体が考えられている。 Recently, research on automotive headlights using laser light sources has been actively conducted, and one of them is a white light source combining a blue laser or an ultraviolet laser with a phosphor. By condensing the laser light, the light density of the excitation light can be increased, and by concentrating a plurality of laser lights on the phosphor, the light intensity of the excitation light can be increased. As a result, the luminous flux and the luminance can be simultaneously increased without changing the light emitting area. For this reason, a white light source combining a semiconductor laser and a phosphor has been attracting attention as a light source replacing the LED. For example, the fluorescent glass used in automotive headlights is Nippon Electric Glass Co., Ltd.'s "Lumiface" fluorescent glass, the National Research and Development Agency of Materials and Materials, Tamura Corporation, and Lightwave's YAG single crystal fluorescent glass. The body is considered.
 特許文献1(特許5679435)記載の蛍光体素子では、蛍光体の幅が、入射面から出射面へ向かって拡がっている。この蛍光体の側面の傾斜角度は15度以上、35度以下とされている。そして、樹脂ケースの中に蛍光体を収容し、ケースの内面をリフレクタ部として機能させるために金属膜が形成されている。蛍光体は封止樹脂によってケースの底面に固定されており、蛍光体の側面は空気で覆われている。 蛍 光 In the phosphor element described in Patent Document 1 (Patent 5,679,435), the width of the phosphor increases from the incident surface to the emission surface. The angle of inclination of the side surface of the phosphor is 15 degrees or more and 35 degrees or less. Then, a metal film is formed to accommodate the phosphor in a resin case and allow the inner surface of the case to function as a reflector portion. The phosphor is fixed to the bottom surface of the case by a sealing resin, and the side surface of the phosphor is covered with air.
 特許文献2(特開2017-85038)に記載の蛍光体素子では、蛍光体の幅が、入射面から出射面へ向かって拡がっており、放熱部材の貫通孔に蛍光体を収容し、貫通孔の側面が貫通孔の表面とガラスペーストによって接着されている。 In the phosphor element described in Patent Document 2 (Japanese Patent Application Laid-Open No. 2017-85038), the width of the phosphor increases from the incident surface to the emission surface, and the phosphor is accommodated in the through hole of the heat radiation member. Are bonded to the surface of the through-hole with a glass paste.
  また、特許文献3~7記載の蛍光体素子では、蛍光体に対して励起光を入射し、蛍光体内で蛍光および励起光を反射して方向転換させ、蛍光体から白色光として出射する。 In the phosphor elements described in Patent Documents 3 to 7, excitation light is incident on the phosphor, the fluorescence and the excitation light are reflected and changed in direction in the phosphor, and emitted as white light from the phosphor.
特許5679435Patent 5679435 特開2017-85038JP-A-2017-85038 特開2013-187043JP 2013-187043 特開2014-986556JP 2014-98556 A WO 2017/217486 A1WO 2017/217486 A1 特開2015-50124JP-A-2015-50124 特開2016-58624JP 2016-58624
 特許文献1、2記載の蛍光体素子では、蛍光体の入射面から励起光を入射させ、入射面と反対側の出射面から励起光および蛍光を出射させるので、光路を変更することができず、設計上の限界がある。 In the phosphor elements described in Patent Literatures 1 and 2, excitation light is made incident from the entrance surface of the phosphor, and excitation light and fluorescence are emitted from the exit surface opposite to the entrance surface, so that the optical path cannot be changed. , There are design limitations.
  一方、本発明者が、蛍光体中で光を反射させる反射型蛍光体素子の検討を進めるうちに、次の問題が明らかになってきた。すなわち、蛍光強度を高くするためには、励起光の強度を高くする必要がある。しかし、反射型の蛍光体素子では、蛍光体中で励起光および蛍光が反射されて伝搬するが、反射する回数が多く、反射による吸収や散乱による光子の消失がある。このため、励起光強度を上げると、蛍光体の温度が上がり、得られる光強度に限界があった。更に、素子から出射する白色光に色ムラが発生することがあった。このため、継続使用時の出射光の蛍光強度を高く維持し、色ムラを抑制することが必要である。 On the other hand, while the present inventor has been studying a reflective phosphor element that reflects light in the phosphor, the following problem has become apparent. That is, in order to increase the fluorescence intensity, it is necessary to increase the intensity of the excitation light. However, in the reflection type phosphor element, although the excitation light and the fluorescence are reflected and propagated in the phosphor, the number of times of reflection is large, and photons disappear due to absorption or scattering by reflection. For this reason, when the excitation light intensity is increased, the temperature of the phosphor increases, and the light intensity obtained is limited. Further, color unevenness sometimes occurred in white light emitted from the element. For this reason, it is necessary to keep the fluorescence intensity of the emitted light high during continuous use and to suppress color unevenness.
 本発明の課題は、反射型蛍光体素子に対して励起光を入射させて蛍光を発生させるのに際して、出射光の蛍光強度を高くし,出射する白色光の色ムラを抑制することである。 The object of the present invention is to increase the fluorescence intensity of emitted light and suppress color unevenness of emitted white light when exciting light is incident on the reflective phosphor element to generate fluorescence.
  また、本発明の課題は、反射型蛍光体素子を製造するのに際して、蛍光体部からの放熱を促進しやすい製法を提供することである。 Another object of the present invention is to provide a manufacturing method which facilitates heat radiation from a phosphor portion when manufacturing a reflective phosphor element.
  本発明に係る蛍光体素子は、励起光の入射面、前記入射面に対向する対向面および側面を備えている蛍光体部であって、前記入射面に入射する前記励起光の少なくとも一部を蛍光に変換し、前記蛍光を前記入射面から出射させる蛍光体部、
  前記蛍光体部の前記側面上および前記対向面上にあり、前記蛍光体部の屈折率よりも低い屈折率を有する一体の低屈折率層、および
  前記低屈折率層の表面を被覆する一体の反射膜
を備えており、前記蛍光体部の前記入射面の面積が前記対向面の面積よりも大きいことを特徴とする。
The phosphor element according to the present invention is a phosphor section having an excitation light incident surface, a facing surface and a side surface facing the incident surface, and at least a part of the excitation light incident on the incident surface. A phosphor part that converts the light into fluorescent light and emits the fluorescent light from the incident surface;
An integrated low-refractive-index layer having a refractive index lower than the refractive index of the phosphor section, on the side surface and the opposing surface of the phosphor section; and an integral low-refractive-index layer covering the surface of the low-refractive-index layer. A reflecting film is provided, and the area of the incident surface of the phosphor section is larger than the area of the facing surface.
  また、本発明は、レーザ光を発振する光源、および前記蛍光体素子を備えることを特徴とする、照明装置に係るものである。 The present invention also relates to a lighting device, comprising: a light source that oscillates a laser beam; and the phosphor element.
  また、本発明は、励起光の入射面、前記入射面に対向する対向面および側面を備えている蛍光体部であって、前記入射面に入射する前記励起光の少なくとも一部を蛍光に変換し、前記蛍光を前記入射面から出射させる蛍光体部、および
  前記蛍光体部を被覆する一体の反射膜
を備えており、前記蛍光体部の前記入射面の面積が前記対向面の面積よりも大きい蛍光体素子を製造する方法であって、
  第一の主面と第二の主面を有する蛍光体基板の前記第二の主面をハンドル基板に対して接合する工程、
  前記蛍光体基板の前記第一の主面を加工して前記対向面および前記側面を形成することによって前記蛍光体部を形成する工程、
  前記対向面および前記側面を被覆するように前記反射膜を成膜する工程、および
  前記蛍光体部を前記ハンドル基板から分離する工程
を有することを特徴とする。
Further, the present invention is a phosphor portion having an incident surface of the excitation light, an opposing surface and a side surface facing the incident surface, and converts at least a part of the excitation light incident on the incident surface into fluorescent light. A phosphor portion that emits the fluorescent light from the incident surface; and an integral reflecting film that covers the phosphor portion, wherein the area of the incident surface of the phosphor portion is greater than the area of the facing surface. A method of manufacturing a large phosphor element,
Joining the second main surface of the phosphor substrate having a first main surface and a second main surface to a handle substrate,
Forming the phosphor portion by processing the first main surface of the phosphor substrate to form the opposing surface and the side surface;
A step of forming the reflection film so as to cover the facing surface and the side surface; and a step of separating the phosphor section from the handle substrate.
 本発明によれば、蛍光体部の入射面に対して励起光を入射し、入射面から励起光および蛍光を出射させる蛍光体素子において、出射光の蛍光強度を高く維持し、色ムラを抑制することができる。 ADVANTAGE OF THE INVENTION According to this invention, in the fluorescent element which injects excitation light with respect to the incident surface of a fluorescent substance part, and emits excitation light and fluorescence from an incident surface, the fluorescence intensity of emitted light is maintained high and color unevenness is suppressed. can do.
  また、本発明の製法によれば、蛍光体部の入射面に対して励起光を入射し、入射面から励起光および蛍光を出射させる蛍光体素子において、蛍光体部の側面上および対向面上に同一材料で切れ目のない一体の反射膜を同時に形成でき、これによって反射膜からの放熱を促進できる。 Further, according to the manufacturing method of the present invention, in the phosphor element which emits excitation light to the incident surface of the phosphor portion and emits the excitation light and the fluorescence from the incident surface, on the side surface and the opposing surface of the phosphor portion In this case, an integral reflection film can be simultaneously formed of the same material without discontinuity, whereby heat radiation from the reflection film can be promoted.
 なお、特許文献6によれば、平板状の蛍光体層の主面に全反射膜、反射層が形成されており、かつ蛍光体層の幅は一定である。また、特許文献7によれば、セラミック蛍光体の側面上に反射膜を設けており、また蛍光体層の側面にテーパを設けている。ただし、反射部は板状のものであり、かつ低屈折率層との積層構造ではない。ゆえに、特許文献6と7とを組み合わせたものと仮定すると、蛍光体層の側面にテーパを設け、側面上に反射膜を設け、蛍光体層の主面上に低屈折率層と反射膜を設けることになる。しかし、この構造では、後述する図4のようになるが、本発明の効果は得られない。 According to Patent Document 6, a total reflection film and a reflection layer are formed on the main surface of a flat phosphor layer, and the width of the phosphor layer is constant. According to Patent Document 7, a reflection film is provided on a side surface of a ceramic phosphor, and a taper is provided on a side surface of a phosphor layer. However, the reflecting portion is plate-shaped and does not have a laminated structure with a low refractive index layer. Therefore, assuming that Patent Documents 6 and 7 are combined, a taper is provided on the side surface of the phosphor layer, a reflection film is provided on the side surface, and a low refractive index layer and a reflection film are provided on the main surface of the phosphor layer. Will be provided. However, with this structure, the effect of the present invention cannot be obtained although the result is as shown in FIG. 4 described later.
(a)は、本発明の実施形態に係る蛍光体素子1を示す斜視図であり、(b)は、蛍光体素子1の断面図である。1A is a perspective view illustrating a phosphor element 1 according to an embodiment of the present invention, and FIG. 2B is a cross-sectional view of the phosphor element 1. (a)は、蛍光体素子1における光の伝搬経路を示す模式図であり、(b)は、対照例の蛍光体素子11における光の伝搬経路を示す模式図である。(A) is a schematic diagram illustrating a light propagation path in the phosphor element 1, and (b) is a schematic diagram illustrating a light propagation path in the phosphor element 11 of the comparative example. (a)は、蛍光体素子1における光の伝搬経路を示す模式図であり、(b)は、対照例の蛍光体素子21における光の伝搬経路を示す模式図である。(A) is a schematic diagram showing a light propagation path in the phosphor element 1, and (b) is a schematic diagram showing a light propagation path in the phosphor element 21 of the comparative example. 対照例の蛍光体素子26における光の伝搬経路を示す模式図である。It is a schematic diagram which shows the propagation path of the light in the fluorescent element 26 of a control example. 本発明の他の実施形態に係る蛍光体素子31を示す断面図である。FIG. 9 is a cross-sectional view illustrating a phosphor element 31 according to another embodiment of the present invention. 本発明の更に他の実施形態に係る蛍光体素子41を示す斜視図である。It is a perspective view showing phosphor element 41 concerning other embodiments of the present invention. 蛍光体素子41の断面図である。FIG. 4 is a cross-sectional view of a phosphor element 41. (a)は、蛍光体からなる蛍光体基板51をハンドル基板53に対して接合した状態を示し、(b)は、蛍光体基板を加工して複数の蛍光体部2を形成した状態を示す。(A) shows a state in which a phosphor substrate 51 made of a phosphor is joined to a handle substrate 53, and (b) shows a state in which a plurality of phosphor portions 2 are formed by processing the phosphor substrate. . 接合層52上および蛍光体部2上に低屈折率層54を設けた状態を示す斜視図である。FIG. 4 is a perspective view showing a state in which a low refractive index layer 54 is provided on a bonding layer 52 and a phosphor section 2. 低屈折率層54上に反射膜55を設けた状態を示す斜視図である。FIG. 3 is a perspective view showing a state in which a reflection film 55 is provided on a low refractive index layer 54. 更に他の実施形態に係る蛍光体素子61を模式的に示す断面図である。It is sectional drawing which shows the phosphor element 61 which concerns on further another embodiment typically. 更に他の実施形態に係る蛍光体素子61Aを模式的に示す断面図である。It is sectional drawing which shows typically the fluorescent element 61A which concerns on another embodiment. 更に他の実施形態に係る蛍光体素子61Bを模式的に示す断面図である。It is sectional drawing which shows the phosphor element 61B which concerns on still another embodiment typically. 各蛍光体素子のパワー効率とテーパ角の関係を示すグラフである。5 is a graph showing the relationship between the power efficiency of each phosphor element and the taper angle.
  以下、適宜図面を参照しつつ、本発明を更に詳細に説明する。
  図1に示す蛍光体素子1においては、蛍光体部2は、入射面2a、出射面2bおよび4つの側面2cを備えている。図2(b)に示すように、蛍光体部の横断面においては、蛍光体部は略台形をなしており、入射面2aに対する側面2cの角度θは90°より小さい鋭角となっている。そして、入射面2aの面積AIは対向面2bの面積ARよりも大きい。
Hereinafter, the present invention will be described in more detail with reference to the drawings as appropriate.
In the phosphor element 1 shown in FIG. 1, the phosphor section 2 includes an incident surface 2a, an exit surface 2b, and four side surfaces 2c. As shown in FIG. 2B, in the cross section of the phosphor portion, the phosphor portion has a substantially trapezoidal shape, and the angle θ of the side surface 2c with respect to the incident surface 2a is an acute angle smaller than 90 °. The area AI of the incident surface 2a is larger than the area AR of the opposing surface 2b.
  蛍光体部2の側面2c上には低屈折率層3bが設けられており、対向面2b上には低屈折率層3aが設けられており、低屈折率層3aと3bとによって一体の低屈折率層3が形成されている。本例では、低屈折率層3は、蛍光体部2の側面2cおよび対向面2bを全面にわたって同一材料で被覆している。更に、本例では、低屈折率層3a上に反射膜4aが設けられ、低屈折率層3b上に反射膜4bが設けられており、反射膜4aと4bとによって同一材料で一体の反射膜4が形成されている。本例では、反射膜4は低屈折率層3を全面にわたって被覆している。 A low-refractive-index layer 3b is provided on the side surface 2c of the phosphor section 2, and a low-refractive-index layer 3a is provided on the opposing surface 2b. The low-refractive- index layers 3a and 3b form an integrated low-refractive-index layer. The refractive index layer 3 is formed. In this example, the low refractive index layer 3 covers the entire surface of the side surface 2c and the opposing surface 2b of the phosphor section 2 with the same material. Further, in this example, a reflective film 4a is provided on the low refractive index layer 3a, and a reflective film 4b is provided on the low refractive index layer 3b, and the reflective films 4a and 4b are integrally formed of the same material. 4 are formed. In this example, the reflection film 4 covers the low refractive index layer 3 over the entire surface.
  ここで、本発明の蛍光体素子によって高い蛍光強度が得られ、色ムラが抑制される理由について更に述べる。
  図2(a)に示すように、本発明の蛍光体素子1では、蛍光体部2中に分散されている多数の蛍光体粒子5に対して、矢印Aのように入射した励起光があたる。すると,各蛍光体粒子5から矢印C、Dのように蛍光が放出される。このとき、各蛍光体粒子からは、あらゆる方向に向かって均等に蛍光が放射される傾向がある。
Here, the reason why a high fluorescent intensity is obtained by the phosphor element of the present invention and color unevenness is suppressed will be further described.
As shown in FIG. 2A, in the phosphor element 1 of the present invention, excitation light incident as shown by an arrow A impinges on a large number of phosphor particles 5 dispersed in the phosphor part 2. . Then, fluorescence is emitted from each phosphor particle 5 as shown by arrows C and D. At this time, the fluorescent particles tend to emit fluorescence uniformly in all directions.
  ここで、蛍光体粒子から入射面2aの方向に向かって放射される蛍光は、そのまま入射面2aから出射する。また蛍光体粒子から対向面2bに向かって放射される蛍光は、対向面で反射してそのまま入射面2aから出射する。しかし、矢印C、Dのように斜めに放射される蛍光は、反射膜4bで反射されて矢印E、Bのように入射面2aから出射する。このとき、蛍光体部2の入射面の面積AIが対向面の面積ARよりも大きくなっており、側面2cが傾斜していると、その傾斜角度θの分だけ反射光Eの方向が傾斜面2aに向かって傾斜する。この結果、蛍光が入射面2aから出射するまでの反射回数を減らすことができる。 蛍 光 Here, the fluorescent light emitted from the phosphor particles in the direction of the incident surface 2a is emitted from the incident surface 2a as it is. The fluorescent light emitted from the phosphor particles toward the opposing surface 2b is reflected by the opposing surface and exits from the incident surface 2a as it is. However, the fluorescent light emitted obliquely as shown by arrows C and D is reflected by the reflection film 4b and emitted from the incident surface 2a as shown by arrows E and B. At this time, if the area AI of the incident surface of the phosphor section 2 is larger than the area AR of the opposing surface, and the side surface 2c is inclined, the direction of the reflected light E is reduced by the inclination angle θ. 2a. As a result, the number of reflections until the fluorescent light exits from the incident surface 2a can be reduced.
  一方、図2(b)に示す対照例の蛍光体素子11によれば、蛍光体部12の幅は一定である。そして、蛍光体素子12の側面12c、対向面12b上には低屈折率層13a、13bが設けられており、低屈折率層13aと13bとは同一材料で一体の低屈折率層13を形成している。低屈折率層13b上には反射膜14bが設けられており、低屈折率層13a上には反射膜14aが設けられており、反射膜14aと14bとは同一材料で一体の反射膜14を形成している。 On the other hand, according to the phosphor element 11 of the comparative example shown in FIG. 2B, the width of the phosphor section 12 is constant. The low refractive index layers 13a and 13b are provided on the side surface 12c and the opposing surface 12b of the phosphor element 12, and the low refractive index layers 13a and 13b form the integral low refractive index layer 13 with the same material. doing. A reflection film 14b is provided on the low-refractive-index layer 13b, and a reflection film 14a is provided on the low-refractive-index layer 13a. The reflection films 14a and 14b are integrally formed of the same material. Has formed.
  この場合には、蛍光体粒子5から例えば側面12cに向かって放射された蛍光Fは、そのままGのように反射されて粒子5に戻るため、入射面12aから反射されないことになる。つまり、側面12cと入射面12aとが垂直であるので、蛍光を反射するときに蛍光の方向を入射面12aへと向ける作用が働かない。この結果、蛍光の反射回数が増加する。反射膜での反射率は100%ではなく、蛍光の一部が反射膜で吸収されるので、反射回数が多いと蛍光は減衰し、反射膜の温度上昇により蛍光体部からの排熱が悪くなり、蛍光体の温度が上昇し、蛍光強度が低下する。 In this case, the fluorescent light F emitted from the phosphor particles 5 toward, for example, the side surface 12c is reflected as it is as G and returns to the particles 5, so that it is not reflected from the incident surface 12a. That is, since the side surface 12c and the incident surface 12a are perpendicular to each other, the function of directing the direction of the fluorescent light toward the incident surface 12a when reflecting the fluorescent light does not work. As a result, the number of fluorescence reflections increases. The reflectance at the reflective film is not 100%, and a part of the fluorescent light is absorbed by the reflective film. Therefore, if the number of reflections is large, the fluorescent light is attenuated, and the temperature rise of the reflective film deteriorates the exhaust heat from the phosphor part. As a result, the temperature of the phosphor increases, and the fluorescence intensity decreases.
  更に、図3(a)に示すように、本発明の蛍光体素子においては、蛍光体粒子5から発振した蛍光のうち、蛍光H1は、低屈折率層によって全反射をうけず、蛍光体部2と低屈折率層3aとの界面で屈折し、反射膜4aによってH2のように反射され、再び蛍光体部2と低屈折率層3aとの界面で屈折し、蛍光体部2中を伝搬し、入射面2aから出射する。 Further, as shown in FIG. 3A, in the phosphor element of the present invention, of the fluorescence oscillated from the phosphor particles 5, the fluorescence H1 is not totally reflected by the low refractive index layer, Is refracted at the interface between the low refractive index layer 3 and the low refractive index layer 3a, is reflected by the reflection film 4a like H2, is refracted again at the interface between the fluorescent part 2 and the low refractive index layer 3a, and propagates through the fluorescent part 2. Then, the light exits from the incident surface 2a.
  一方、図3(b)の対照例では、蛍光体部2の形状は図3(a)の蛍光体部2と同じにする。そして、蛍光体素子2の側面2c上には低屈折率層23が設けられている。しかし、蛍光体部2の対向面2b上には低屈折率層が設けられていない。その上で、低屈折率層23上には反射膜24bが設けられており、蛍光体部2の対向面2b上には反射膜24aが設けられており、反射膜24aと24bとは一体の反射膜24を形成している。 On the other hand, in the control example of FIG. 3B, the shape of the phosphor part 2 is the same as that of the phosphor part 2 of FIG. The low refractive index layer 23 is provided on the side surface 2c of the phosphor element 2. However, the low refractive index layer is not provided on the opposing surface 2b of the phosphor section 2. In addition, a reflective film 24b is provided on the low refractive index layer 23, and a reflective film 24a is provided on the facing surface 2b of the phosphor section 2, and the reflective films 24a and 24b are integrated. The reflection film 24 is formed.
  この場合にも、蛍光体粒子5から矢印H1のように対向面側へと向かって反射された蛍光は、反射膜24aで反射され、矢印H2のように蛍光体部2内を伝搬し、入射面2aから出射する。 Also in this case, the fluorescent light reflected from the phosphor particles 5 toward the facing surface as shown by the arrow H1 is reflected by the reflection film 24a, propagates through the phosphor portion 2 as shown by the arrow H2, and is incident. The light exits from the surface 2a.
  一方、図3(a)に示すように、蛍光体粒子5から矢印Jのように対向面へと向かって斜めに放射された蛍光は、低屈折率層3aで全反射条件を満足するので、矢印J1のように全反射し、更に低屈折率層3bと蛍光体部2との界面で矢印J2のように全反射し、入射面2aから出射する。 On the other hand, as shown in FIG. 3A, the fluorescent light emitted obliquely from the phosphor particles 5 toward the opposing surface as shown by the arrow J satisfies the total reflection condition in the low refractive index layer 3a. The light is totally reflected as indicated by an arrow J1 and further reflected at the interface between the low refractive index layer 3b and the phosphor portion 2 as indicated by an arrow J2, and exits from the incident surface 2a.
  これに対して、図3(b)の蛍光体素子21では、蛍光体粒子5から矢印Jのように対向面へと向かって斜めに放射された蛍光は、対向面2b上に設けられた反射膜24aで矢印J3のように反射され、更に低屈折率層23と蛍光体部2との界面で矢印J4のように全反射し、入射面2aから出射する。この場合、反射膜24aでの光エネルギーの吸収量が多いのとともに、反射膜24aの温度が上昇し、蛍光体部2の排熱が悪くなり、温度上昇を招く。したがって、蛍光体の温度消光によって入射面2aから出射する蛍光の強度が低下する。 On the other hand, in the phosphor element 21 of FIG. 3B, the fluorescent light emitted obliquely from the phosphor particles 5 toward the opposing surface as shown by the arrow J is reflected on the opposing surface 2b. The light is reflected by the film 24a as indicated by an arrow J3, is further totally reflected by the interface between the low refractive index layer 23 and the phosphor part 2 as indicated by an arrow J4, and is emitted from the incident surface 2a. In this case, the amount of light energy absorbed by the reflection film 24a is large, and the temperature of the reflection film 24a rises, so that the exhaust heat of the phosphor part 2 is deteriorated and the temperature rises. Therefore, the intensity of the fluorescent light emitted from the incident surface 2a decreases due to the temperature quenching of the phosphor.
 一方、図4に示す対照例の蛍光体素子26では、蛍光体部2の形状は図3(a)の蛍光体部2と同じにする。そして、蛍光体素子2の対向面2b上には低屈折率層27が設けられているが、側面2c上には低屈折率層が設けられていない。反射膜4aと4bとは一体の反射膜4を形成している。 On the other hand, in the phosphor element 26 of the comparative example shown in FIG. 4, the shape of the phosphor part 2 is the same as that of the phosphor part 2 in FIG. The low refractive index layer 27 is provided on the opposing surface 2b of the phosphor element 2, but the low refractive index layer is not provided on the side surface 2c. The reflection films 4a and 4b form an integral reflection film 4.
  この場合にも、蛍光体粒子5から矢印H1のように対向面側へと向かって反射された蛍光は、反射膜4aで反射され、矢印H2のように蛍光体部2内を伝搬し、入射面2aから出射する。 Also in this case, the fluorescence reflected from the phosphor particles 5 toward the opposite surface side as shown by the arrow H1 is reflected by the reflection film 4a, propagates through the phosphor portion 2 as shown by the arrow H2, and is incident. The light exits from the surface 2a.
  一方、図3(a)に示すように、蛍光体粒子5から矢印Jのように対向面へと向かって斜めに放射された蛍光は、矢印J1のように全反射し、更に低屈折率層3bと蛍光体部2との界面で矢印J2のように全反射し、入射面2aから出射する。 On the other hand, as shown in FIG. 3A, the fluorescent light emitted obliquely from the phosphor particles 5 toward the opposing surface as shown by the arrow J is totally reflected as shown by the arrow J1 and further has a low refractive index layer. The light is totally reflected at the interface between the fluorescent material portion 3b and the phosphor portion 2 as indicated by an arrow J2, and is emitted from the incident surface 2a.
  これに対して、図4の蛍光体素子26では、蛍光体粒子5から矢印Jのように側面へと向かって斜めに放射された蛍光は、側面上の反射膜4bで矢印J5のように全反射し、入射面2aから出射する。この場合、反射膜4bで全反射されるので、光エネルギーの吸収量が多いのとともに、反射膜4bおよびこれにつながる反射膜4aの温度が上昇し、蛍光体部2の排熱が悪くなり、温度上昇を招く。したがって、蛍光体の温度消光によって入射面2aから出射する蛍光の経時的に強度が低下する。 On the other hand, in the phosphor element 26 of FIG. 4, the fluorescent light emitted obliquely from the phosphor particles 5 toward the side as indicated by the arrow J is totally reflected by the reflection film 4b on the side as indicated by the arrow J5. The light is reflected and exits from the incident surface 2a. In this case, since the light is totally reflected by the reflection film 4b, the amount of light energy absorbed is large, and the temperature of the reflection film 4b and the reflection film 4a connected to the reflection film 4b rises, so that the exhaust heat of the phosphor part 2 is deteriorated. Causes temperature rise. Therefore, the intensity of the fluorescence emitted from the incident surface 2a decreases with time due to the temperature quenching of the phosphor.
 本発明の蛍光体素子は、励起光の入射面、前記入射面に対向する対向面および側面を備えている蛍光体部であって、前記入射面に入射する前記励起光の少なくとも一部を蛍光に変換し、前記蛍光を前記入射面から出射させる蛍光体部を有する。
 ここで、励起光の全体を蛍光に変換した場合には、蛍光のみが入射面から出射する。あるいは、励起光の一部を蛍光に変換することで、蛍光および励起光を入射面から出射させることができる。
The phosphor element of the present invention is a phosphor portion having an incident surface of excitation light, a facing surface facing the incident surface, and a side surface, wherein at least a part of the excitation light incident on the incident surface is fluorescent. And a phosphor part for emitting the fluorescent light from the incident surface.
Here, when the entire excitation light is converted into fluorescent light, only the fluorescent light is emitted from the incident surface. Alternatively, by converting part of the excitation light into fluorescence, the fluorescence and the excitation light can be emitted from the incident surface.
 蛍光体部を構成する蛍光体は、励起光を蛍光に変換できるものであれば限定されないが、蛍光体ガラス、蛍光体単結晶または蛍光体多結晶であってよい。
 また、蛍光体には、励起光および蛍光を散乱させるために散乱材を添加したり、空孔を設けたりすることができる。この場合、蛍光体に入射する光は、蛍光体内で散乱させるために出射光(励起光および蛍光)は散乱され散乱角は大きくなる。
The phosphor constituting the phosphor section is not limited as long as it can convert excitation light into fluorescence, but may be phosphor glass, phosphor single crystal, or phosphor polycrystal.
In addition, a scattering material may be added to the phosphor to scatter the excitation light and the fluorescence, or holes may be provided in the phosphor. In this case, since the light incident on the phosphor is scattered in the phosphor, the emitted light (excitation light and fluorescence) is scattered, and the scattering angle is increased.
 蛍光体の散乱角は、例えば、サイバーネットシステム社の散乱測定器「Mini-Diff」によって測定することができる。散乱角は、出射光の透過スペクトルからピーク値の1/eとなる全幅角度と定義する。
 このとき散乱角は5度以上であることが好ましく、10度以上であることが更に好ましい。ただし、蛍光体部を構成する蛍光体の散乱角の上限は特にないが、出射光の開口数(NA)以下であってよく、実用的な観点からは、80度以下であってよい。
The scattering angle of the phosphor can be measured by, for example, a scatterometer “Mini-Diff” manufactured by Cybernet Systems. The scattering angle is defined as the full width angle that is 1 / e 2 of the peak value from the transmission spectrum of the emitted light.
At this time, the scattering angle is preferably 5 degrees or more, and more preferably 10 degrees or more. However, the upper limit of the scattering angle of the phosphor constituting the phosphor portion is not particularly limited, but may be equal to or less than the numerical aperture (NA) of the emitted light, and may be equal to or less than 80 degrees from a practical viewpoint.
 蛍光体ガラスは、ベースとなるガラス中に希土類元素イオンを分散したものである。
 ベースとなるガラスとしては、シリカ、酸化ホウ素、酸化カルシウム、酸化ランタン、酸化バリウム、酸化亜鉛、酸化リン、フッ化アルミニウム、フッ化マグネシウム、フッ化カルシウム、フッ化ストロンチウム、塩化バリウムを含む酸化ガラスが例示できる。
 蛍光体ガラス中に分散される希土類元素イオンとしては、Tb、Eu、Ce、Ndが好ましいが、La、Pr、Sc、Sm、Er、Tm、Dy、Gd、Luであってもよい。
Phosphor glass is obtained by dispersing rare earth element ions in a base glass.
The base glass includes silica, boron oxide, calcium oxide, lanthanum oxide, barium oxide, zinc oxide, phosphorus oxide, aluminum fluoride, magnesium fluoride, calcium fluoride, strontium fluoride, and oxide glass containing barium chloride. Can be illustrated.
As the rare earth element ions dispersed in the phosphor glass, Tb, Eu, Ce, and Nd are preferable, but La, Pr, Sc, Sm, Er, Tm, Dy, Gd, and Lu may be used.
 蛍光体単結晶としては、YAl12、BaSi11l725、TbAl12やYAG(イットリウム・アルミニウム・ガーネット)が例示できる。YAGのY(イットリウム)の一部がLuに置換されていてもよい。また、蛍光体単結晶中にドープするドープ成分としては、希土類イオンが好ましく、Tb、Eu、Ce、Ndが特に好ましいが、La、Pr、Sc、Sm、Er、Tm、Dy、Gd、Luであってもよい。 The phosphor monocrystal, Y 3 Al 5 O 12, Ba 5 Si 11 A l7 N 25, Tb 3 Al 5 O 12 and YAG (yttrium aluminum garnet) can be exemplified. A part of Y (yttrium) of YAG may be substituted by Lu. As a doping component to be doped into the phosphor single crystal, rare earth ions are preferable, and Tb, Eu, Ce, and Nd are particularly preferable. However, La, Pr, Sc, Sm, Er, Tm, Dy, Gd, and Lu are preferable. There may be.
 また、蛍光体多結晶としては、TAG(テルビウム・アルミニウム・ガーネット)系、サイアロン系、窒化物系、BOS(バリウム・オルソシリケート)系、YAG(イットリウム・アルミニウム・ガーネット)が例示できる。YAGのY(イットリウム)の一部がLuに置換されていてもよい。
 蛍光体多結晶中にドープするドープ成分としては、希土類イオンが好ましく、Tb、Eu、Ce、Ndが特に好ましいが、La、Pr、Sc、Sm、Er、Tm、Dy、Gd、Luであってもよい。
Examples of the polycrystalline phosphor include TAG (terbium aluminum garnet), sialon, nitride, BOS (barium orthosilicate), and YAG (yttrium aluminum garnet). A part of Y (yttrium) of YAG may be substituted by Lu.
As a doping component to be doped in the phosphor polycrystal, rare earth ions are preferable, and Tb, Eu, Ce, and Nd are particularly preferable. However, La, Pr, Sc, Sm, Er, Tm, Dy, Gd, and Lu are preferable. Is also good.
 なお、本発明の蛍光体素子は、グレーティング(回折格子)を蛍光体部内に含んでいない無グレーティング型蛍光体素子であってよく、グレーティングが蛍光体部中に設けられていてもよい。 The phosphor element of the present invention may be a non-grating type phosphor element that does not include a grating (diffraction grating) in the phosphor section, and the grating may be provided in the phosphor section.
 蛍光体部は,励起光の入射面、対向面および側面を少なくとも有する。側面とは、入射面と対向面との間に伸びる面である。ここで、蛍光体部の形状は特に限定されない。例えば蛍光体部の入射面、対向面の形状は、例えば、円形、楕円形、三角形、四角形、六角形などの多角形であってよい。 (4) The phosphor section has at least an excitation light incident surface, a facing surface, and a side surface. The side surface is a surface extending between the incident surface and the facing surface. Here, the shape of the phosphor is not particularly limited. For example, the shapes of the incident surface and the opposing surface of the phosphor portion may be, for example, a polygon such as a circle, an ellipse, a triangle, a square, and a hexagon.
 本発明では、蛍光体部の側面上および対向面上にあり、蛍光体部の屈折率よりも低い屈折率を有する一体の低屈折率層を有する。 According to the present invention, there is provided an integrated low-refractive-index layer on the side surface and the opposing surface of the phosphor section, and having a lower refractive index than the phosphor section.
  ここで、低屈折率層は、蛍光体部の側面上および対向面上に設けられているが、低屈折率層が一体であるとは、低屈折率層が互いに連続していることを意味する。ただし、低屈折率層が、側面および対向面の全面をすべて被覆している必要はなく、側面の一部、対向面の一部が低屈折率層によって被覆されずに露出することは許容するものとする。しかし、この場合にも、側面の全面積のうち90%以上、対向面の全面積のうち90%以上が低屈折率層によって被覆されていることが好ましく、側面および対向面の全面が低屈折率層によって被覆されていることが更に好ましい。 Here, the low-refractive-index layer is provided on the side surface and the opposing surface of the phosphor portion, but the integral low-refractive-index layer means that the low-refractive-index layers are continuous with each other. I do. However, the low-refractive-index layer does not need to cover the entire side surface and the entirety of the opposing surface, and it is acceptable that a part of the side surface and a part of the opposing surface are exposed without being covered by the low-refractive index layer. Shall be. However, also in this case, it is preferable that 90% or more of the entire area of the side surface and 90% or more of the entire area of the opposing surface are covered with the low refractive index layer. More preferably, it is covered by a rate layer.
  低屈折率層の材質としては、酸化アルミニウム、酸化マグネシウム、窒化アルミニウム、酸化タンタル、酸化ケイ素、窒化ケイ素、窒化アルミニウム、炭化ケイ素を例示できる。放熱性という観点からは、低屈折率層の材質は、酸化アルミニウム、酸化マグネシウムが最も良い。 材質 Examples of the material of the low refractive index layer include aluminum oxide, magnesium oxide, aluminum nitride, tantalum oxide, silicon oxide, silicon nitride, aluminum nitride, and silicon carbide. From the viewpoint of heat dissipation, the material of the low refractive index layer is most preferably aluminum oxide or magnesium oxide.
  また、低屈折率層の屈折率は、蛍光体の屈折率より低いが、このようにすると、蛍光体と低屈折率層の屈折率差による全反射を利用することができ、反射膜での反射する光成分を少なくすることができ、反射膜による反射で光が吸収されることを抑制することができる。低屈折率層の屈折率は、1.7以下であることが好ましく、1.6以下であることが更に好ましい。低屈折率層の屈折率の下限は特になく、1以上であるが、1.4以上であることが実用的である。また、蛍光体部の屈折率と低屈折率層の屈折率との差異は、0.1以上であることが好ましく、0.2以上であることが更に好ましい。
 更に蛍光体部の屈折率は1.4~1.9が好ましく、1.65~1.85が更に好ましい。
Also, the refractive index of the low refractive index layer is lower than the refractive index of the phosphor, but in this case, the total reflection due to the refractive index difference between the phosphor and the low refractive index layer can be utilized, and The reflected light component can be reduced, and light can be prevented from being absorbed by reflection by the reflection film. The refractive index of the low refractive index layer is preferably 1.7 or less, and more preferably 1.6 or less. There is no particular lower limit for the refractive index of the low refractive index layer, and it is 1 or more, but it is practically 1.4 or more. Further, the difference between the refractive index of the phosphor part and the refractive index of the low refractive index layer is preferably 0.1 or more, and more preferably 0.2 or more.
Further, the refractive index of the phosphor part is preferably from 1.4 to 1.9, more preferably from 1.65 to 1.85.
 低屈折率層の厚みは1μm以下が好ましく、これによって放熱に対する影響を少なくできる。また、反射膜による吸収を抑制する観点からは、低屈折率層の厚みは0.05μm以上が好ましい。 厚 み The thickness of the low refractive index layer is preferably 1 μm or less, which can reduce the influence on heat radiation. Further, from the viewpoint of suppressing the absorption by the reflective film, the thickness of the low refractive index layer is preferably 0.05 μm or more.
 本発明の蛍光体素子は、低屈折率層の表面を被覆する一体の反射膜を有する。反射膜が一体であるとは、反射膜が互いに連続していることを意味する。ただし、反射膜が、側面および対向面の全面をすべて被覆している必要はなく、側面の一部、対向面の一部において低屈折率層が反射膜によって被覆されずに露出することは許容するものとする。しかし、この場合にも、側面の全面積のうち90%以上、対向面の全面積のうち90%以上が反射膜によって被覆されていることが好ましく、側面および対向面の全面が反射膜によって被覆されていることが更に好ましい。 蛍 光 The phosphor element of the present invention has an integral reflecting film covering the surface of the low refractive index layer. The fact that the reflection films are integral means that the reflection films are continuous with each other. However, it is not necessary that the reflection film covers the entire side surface and the entire opposing surface, and it is acceptable that the low refractive index layer is exposed without being covered by the reflection film on a part of the side surface and a part of the opposing surface. It shall be. However, also in this case, it is preferable that 90% or more of the total area of the side surfaces and 90% or more of the total area of the opposing surfaces are covered with the reflective film, and the entire side surfaces and the opposing surfaces are coated with the reflective film. More preferably, it is performed.
 反射膜の材質は、蛍光体層を通過してきた励起光と蛍光を反射するものであれば特に制限されない。反射膜は、励起光を全反射する必要はなく、励起光の一部を透過させても良いし、全部を透過するものであっても良い。 材質 The material of the reflection film is not particularly limited as long as it reflects the excitation light and the fluorescence that have passed through the phosphor layer. The reflection film does not need to totally reflect the excitation light, and may transmit some or all of the excitation light.
 好適な実施形態においては、反射膜が、金属膜または誘電体多層膜であり、これらの組み合わせであってよい。
 反射膜を金属膜とした場合は、広い波長域で反射することができ、入射角度依存性も小さくすることができ、温度に対する耐久性、耐候性が優れている。一方、反射膜を誘電体多層膜とした場合には、吸収がないため、特定の角度で入射した光は損失なく100%反射光とすることが可能であるし、酸化膜から構成できるので、接合層との密着性を上げることにより、はがれを防止できる。
 組み合わせの場合は、両者を補完する特徴を持たせることができる。
In a preferred embodiment, the reflection film is a metal film or a dielectric multilayer film, and may be a combination thereof.
When the reflective film is a metal film, the light can be reflected in a wide wavelength range, the incident angle dependence can be reduced, and the durability against temperature and weather resistance are excellent. On the other hand, when the reflective film is a dielectric multilayer film, since there is no absorption, light incident at a specific angle can be made 100% reflected light without loss, and can be composed of an oxide film. By increasing the adhesion to the bonding layer, peeling can be prevented.
In the case of a combination, a feature that complements both can be provided.
 反射膜による励起光の反射率は、80%以上とするが、95%以上であることが好ましい。
 誘電体多層膜は、高屈折材料と低屈折材料とを交互に積層した膜である。高屈折材料率としては、TiO、Ta、Ta、ZnO、Si、Nbを例示できる。また、低屈折材料としては、SiO、MgF、CaFを例示できる。誘電体多層膜の積層数や合計厚さは、反射させるべき蛍光の波長によって適宜選択する。
The reflectivity of the excitation light by the reflection film is set to 80% or more, preferably 95% or more.
The dielectric multilayer film is a film in which a high refractive material and a low refractive material are alternately laminated. Examples of the high refractive index include TiO 2 , Ta 2 O 3 , Ta 2 O 3 , ZnO, Si 3 N 4 , and Nb 2 O 5 . Further, examples of the low refraction material include SiO 2 , MgF 2 , and CaF 2 . The number of layers and the total thickness of the dielectric multilayer film are appropriately selected depending on the wavelength of the fluorescence to be reflected.
 また、金属膜の材質としては、以下が好ましい。
(1) Al、Ag、Auなどの単層膜
(2) Al、Ag、Auなどの多層膜
 金属膜の厚さは、蛍光を反射できれば特に限定されないが、0.05μm以上が好ましく、0.1μm以上が更に好ましい。また金属膜と基材との密着性を上げるために、Ti、Cr、Ni、等の金属膜を介して形成することもできる。
Further, the material of the metal film is preferably as follows.
(1) Single layer film of Al, Ag, Au, etc. (2) Multilayer film of Al, Ag, Au, etc. The thickness of the metal film is not particularly limited as long as it can reflect fluorescence, but is preferably 0.05 μm or more. 1 μm or more is more preferable. Further, in order to increase the adhesion between the metal film and the base material, it can be formed via a metal film of Ti, Cr, Ni, or the like.
  本発明においては、蛍光体部の入射面の面積が対向面の面積よりも大きい。前記した低屈折率層および反射膜と、このような対向面のほうが面積の小さい蛍光体部の形態とを組み合わせることによって、前述したメカニズムで、蛍光体部における励起光、蛍光の反射回数を少なくして入射面から出射させることができ、反射膜での吸収による発熱を抑制し、かつ蛍光体部中での光の伝搬によって発生した熱の放熱を促進することができる。 に お い て In the present invention, the area of the incident surface of the phosphor portion is larger than the area of the opposing surface. By combining the low-refractive-index layer and the reflective film with the form of the phosphor portion having a smaller area on the facing surface, the mechanism described above reduces the number of reflections of the excitation light and the fluorescence in the phosphor portion. As a result, it is possible to emit light from the incident surface, suppress heat generation due to absorption by the reflection film, and promote heat radiation of heat generated by propagation of light in the phosphor portion.
  本発明においては、入射面2aの面積AIは対向面2bの面積ARよりも大きく、これによって前述のように入射面から発光する蛍光の強度を向上させることができる。こうした観点からは、入射面2aの面積AI/対向面2bの面積ARは、1.2以上が好ましく、1.47以上が更に好ましい。また、実際上は、入射面2aの面積AI/対向面2bの面積ARは、27.2以下が好ましく、11以下が更に好ましい。 In the present invention, the area AI of the incident surface 2a is larger than the area AR of the opposing surface 2b, whereby the intensity of the fluorescent light emitted from the incident surface can be improved as described above. From such a viewpoint, the ratio of the area AI of the incident surface 2a / the area AR of the opposing surface 2b is preferably 1.2 or more, and more preferably 1.47 or more. In practice, the ratio of the area AI of the incident surface 2a / the area AR of the opposing surface 2b is preferably 27.2 or less, and more preferably 11 or less.
  同様の観点から、蛍光体部の入射面に対する側面の傾斜角度θが50°以上、85°以下であることが好ましく、60°以上、80°以下であることが更に好ましい。この実施形態においては、蛍光体材料内に散乱材が分散されていても良いが、特に好ましくは、蛍光体部を構成する蛍光体材料中に散乱材が分散されていない。 か ら From the same viewpoint, the inclination angle θ of the side surface with respect to the incident surface of the phosphor portion is preferably 50 ° or more and 85 ° or less, more preferably 60 ° or more and 80 ° or less. In this embodiment, the scattering material may be dispersed in the phosphor material, but particularly preferably, the scattering material is not dispersed in the phosphor material constituting the phosphor portion.
 また、蛍光体部の厚み(入射面と対向面との間隔)T(図1、図7)は、蛍光の出射側取出し効率を向上させるために、290μm以上が好ましいが、300μm以上がさらに好ましく、450μm以上であってもよい。さらに800μm以上としてもよい。しかし、小型化という観点から3.0mm以下とすることが好ましく、放熱という観点から1.5μm以下が好ましい。 In addition, the thickness (the distance between the incident surface and the opposing surface) T (FIGS. 1 and 7) of the phosphor portion is preferably 290 μm or more, and more preferably 300 μm or more, in order to improve the efficiency of taking out the fluorescence on the emission side. , 450 μm or more. Further, the thickness may be 800 μm or more. However, the thickness is preferably 3.0 mm or less from the viewpoint of miniaturization, and 1.5 μm or less from the viewpoint of heat radiation.
 好適な実施形態においては、励起光および蛍光を透過する透過性材料からなる部分透過膜を蛍光体部の入射面上に備えることができる。部分透過膜は、励起光の一部を反射し、残りを透過する膜である。具体的には、部分透過膜の励起光に対する反射率は、9%以上であり、50%以下が好ましい。こうした部分透過膜の材質としては、前述した反射用の金属膜や誘電体多層膜を挙げることができる。 In a preferred embodiment, a partially transparent film made of a transparent material that transmits excitation light and fluorescence can be provided on the incident surface of the phosphor section. The partially transmitting film is a film that reflects a part of the excitation light and transmits the rest. Specifically, the reflectance of the partially transmitting film with respect to the excitation light is 9% or more, and preferably 50% or less. Examples of the material of such a partial transmission film include a metal film for reflection and a dielectric multilayer film described above.
 また、好適な実施形態においては、蛍光体部の入射面上に入射面側支持基板を備えることができ、これによって蛍光体部からの放熱効果を一層改善することができる。また、他の好適な実施形態においては、放熱基板の対向面側の主面上に対向面側支持基板を備えることができ、これによって放熱基板からの放熱効果を一層改善することができる。 In the preferred embodiment, the incident surface side support substrate can be provided on the incident surface of the phosphor section, so that the heat radiation effect from the phosphor section can be further improved. Further, in another preferred embodiment, an opposing surface side support substrate can be provided on the main surface on the opposing surface side of the heat radiating substrate, whereby the heat radiating effect from the heat radiating substrate can be further improved.
 ここで、各支持基板の材質としては、熱伝導率(25℃)が200W/mK以上の材質が好ましく、300W/m・K以上の材質が特に好ましい。この材質の熱伝導率の上限は特にないが、実際的な入手の観点からは、500W/m・K以下とすることができる。 Here, as a material of each support substrate, a material having a thermal conductivity (25 ° C.) of 200 W / mK or more is preferable, and a material of 300 W / m · K or more is particularly preferable. Although there is no particular upper limit on the thermal conductivity of this material, it can be set to 500 W / m · K or less from the viewpoint of practical availability.
 ここで、各支持基板の材質は、光を通すために透明ないし透光性であることが好ましい。しかし、入射面側支持基板には、入射面に励起光を照射するための窓を設けることができ、この場合には入射面側支持基板の材質は透明ないし透光性である必要はない。 Here, the material of each support substrate is preferably transparent or translucent to transmit light. However, the incident surface side support substrate can be provided with a window for irradiating the incident surface with the excitation light. In this case, the material of the incident surface side support substrate does not need to be transparent or translucent.
 各支持基板の材質が透明または透光性である場合には、支持基板の材質はアルミナ、窒化アルミニウム、シリコンカーバイド、水晶、ガラスが好ましい。 場合 When the material of each support substrate is transparent or translucent, the material of the support substrate is preferably alumina, aluminum nitride, silicon carbide, quartz, or glass.
 各支持基板の材質が透明、透光性ではない場合には、支持基板の材質はアルミナ、窒化アルミニウム、シリコンカーバイド、水晶、ガラス、銅、銀、金、アルミニウム、あるいは、上記金属を含む合金材料が好ましい。各支持基板の材質は、同じであっても異なっていてもよい。 When the material of each support substrate is not transparent or translucent, the material of the support substrate is alumina, aluminum nitride, silicon carbide, crystal, glass, copper, silver, gold, aluminum, or an alloy material containing the above metal Is preferred. The material of each support substrate may be the same or different.
 図5に示す蛍光体素子31においては、蛍光体部2の入射面2a上に透明または透光性な支持基板7が形成されている。本例では、支持基板7は蛍光体部2よりも広がっており、その上に低屈折率層3cおよび反射膜4cが延設されている。 In the phosphor element 31 shown in FIG. 5, a transparent or translucent support substrate 7 is formed on the incident surface 2a of the phosphor section 2. In this example, the support substrate 7 is wider than the phosphor part 2, and the low refractive index layer 3c and the reflection film 4c are extended thereon.
  また、好適な実施形態においては、反射膜と接する放熱基板を備える。放熱基板の材質の熱伝導率(25℃)は200W/mK以上であることが好ましい。この熱伝導率の上限は特にないが、実際的な入手の観点からは、500W/m・K以下とすることが好ましく、350W/m・K以下とすることがさらに好ましい。
 放熱基板の材質としては、金、銀、銅、アルミニウム、あるいは、これらの金属を含む合金が好ましい。
 また、放熱基板の材質としては、シリコンカーバイドや窒化アルミニウムなどのセラミックスが好ましい。セラミックスの場合、蛍光体との熱膨張係数をある程度に合わせることができる。このため熱応力によるクラックや割れを防止すること等の信頼性を向上するという点で有利となる。
In a preferred embodiment, a heat dissipation substrate is provided in contact with the reflection film. The thermal conductivity (25 ° C.) of the material of the heat radiating substrate is preferably 200 W / mK or more. Although there is no particular upper limit on the thermal conductivity, it is preferably 500 W / m · K or less, more preferably 350 W / m · K or less, from the viewpoint of practical availability.
As a material of the heat dissipation substrate, gold, silver, copper, aluminum, or an alloy containing these metals is preferable.
Further, as a material of the heat dissipation substrate, ceramics such as silicon carbide and aluminum nitride are preferable. In the case of ceramics, the coefficient of thermal expansion with the phosphor can be adjusted to some extent. Therefore, it is advantageous in that reliability such as prevention of cracks and cracks due to thermal stress is improved.
 放熱基板が金属の場合、金属メッキ膜であってよい。
 金属メッキ膜の種類は、電解メッキ膜であってよく、無電解メッキ膜であってもよい。また、金属メッキ膜は、熱伝導率(25℃)が200W/mK以上の金属からなる。
When the heat radiation substrate is made of metal, it may be a metal plating film.
The type of the metal plating film may be an electrolytic plating film or an electroless plating film. The metal plating film is made of a metal having a thermal conductivity (25 ° C.) of 200 W / mK or more.
 蛍光体部の金属メッキ膜を構成する金属の種類は、金、銀、銅、アルミニウム、あるいは、これらの金属を含む合金が特に好ましい。 種類 As the kind of metal constituting the metal plating film of the phosphor part, gold, silver, copper, aluminum, or an alloy containing these metals is particularly preferable.
  図6、図7の蛍光体素子41においては、蛍光体部2、低屈折率層3、反射膜4は、図1の蛍光体素子と同じである。しかし、本例では、蛍光体部2、低屈折率層3および反射膜4が、放熱基板8の凹部8c内に固定され、一体化されている。ただし、8aは、反射膜4aに接する薄板部であり、8bは厚さ一定のフランジ部であり、反射膜4bに接している。 、 In the phosphor element 41 of FIGS. 6 and 7, the phosphor part 2, the low refractive index layer 3, and the reflection film 4 are the same as the phosphor element of FIG. However, in the present example, the phosphor portion 2, the low refractive index layer 3, and the reflection film 4 are fixed and integrated in the concave portion 8c of the heat dissipation substrate 8. However, 8a is a thin plate portion in contact with the reflection film 4a, and 8b is a flange portion having a constant thickness, which is in contact with the reflection film 4b.
 こうした放熱基板の凹部は機械加工やレーザ加工によって形成することができる。あるいは、放熱基板は、メッキ法や溶射法によって形成することもできる。また、放熱基板が金属からなる場合には、放熱基板を焼結型接合材によって蛍光体素子に接合することもできる。さらに、放熱基板がセラミックスからなる場合には、放熱基板を焼結型接合材によって蛍光体素子に接合することもできる。 凹 部 The concave portion of the heat dissipation board can be formed by machining or laser processing. Alternatively, the heat radiating substrate can be formed by a plating method or a thermal spraying method. When the heat radiating substrate is made of metal, the heat radiating substrate can be bonded to the phosphor element by a sintered bonding material. Further, when the heat radiating substrate is made of ceramics, the heat radiating substrate can be joined to the phosphor element by a sintered joining material.
 金属メッキ膜の種類は、電解メッキ膜であってよく、無電解メッキ膜であってもよい。また、金属メッキ膜は、熱伝導率(25℃)が200W/mK以上の金属からなる。
 蛍光体部の金属メッキ膜を構成する金属の種類は、金、銀、銅、アルミニウム、あるいは、これらの金属を含む合金が特に好ましい。
The type of the metal plating film may be an electrolytic plating film or an electroless plating film. The metal plating film is made of a metal having a thermal conductivity (25 ° C.) of 200 W / mK or more.
As the kind of metal constituting the metal plating film of the phosphor part, gold, silver, copper, aluminum, or an alloy containing these metals is particularly preferable.
  反射膜と放熱基板の間には、メッキ用の下地膜があってもよい。下地膜は、Ni、Cr、Ti、あるいは、これらの金属を含む合金であってよい。 メ ッ キ A base film for plating may be provided between the reflection film and the heat dissipation substrate. The base film may be Ni, Cr, Ti, or an alloy containing these metals.
 また、本発明の照明装置は、レーザ光を発振する光源、および前記蛍光体素子を備える。 The illumination device of the present invention includes a light source that oscillates a laser beam and the phosphor element.
 光源としては、照明用蛍光体の励起用として高い信頼性を有するGaN材料による半導体レーザが好適である。また、一次元状に配列したレーザアレイ等の光源も実現可能である。スーパールミネッセンスダイオード、半導体光アンプ(SOA)やLEDであってもよい。また、光ファイバーを通して光源からの励起光を蛍光体素子に対して入射させることもできる。 (4) As the light source, a semiconductor laser made of a GaN material having high reliability for exciting the phosphor for illumination is suitable. Further, a light source such as a laser array arranged one-dimensionally can also be realized. It may be a super luminescence diode, a semiconductor optical amplifier (SOA) or an LED. Also, the excitation light from the light source can be made incident on the phosphor element through the optical fiber.
 半導体レーザと蛍光体から白色光を発生する方法は、特には限定されないが、以下の方法が考えられる。
 青色レーザと蛍光体により黄色の蛍光を発生し、白色光を得る方法
 青色レーザと蛍光体により赤色と緑色の蛍光を発生し白色光を得る方法
 また青色レーザや紫外レーザから蛍光体により赤色、青色、緑色の蛍光を発生し白色光を得る方法
 青色レーザや紫外レーザから蛍光体により青色と黄色の蛍光を発生し白色光を得る方法
The method for generating white light from the semiconductor laser and the phosphor is not particularly limited, but the following method is conceivable.
A method of generating white light by generating yellow fluorescence with a blue laser and a phosphor A method of generating white light by generating red and green fluorescence with a blue laser and a phosphor A method of generating white light by generating green fluorescent light A method of generating white light by generating blue and yellow fluorescent light by a phosphor from a blue laser or an ultraviolet laser
  本発明の製法は、
  第一の主面と第二の主面を有する蛍光体基板の前記第二の主面をハンドル基板に対して接合する工程、
  蛍光体基板の第一の主面を加工して対向面および側面を形成することによって蛍光体部を形成する工程、
  対向面および側面を被覆するように反射膜を成膜する工程、および
  蛍光体部をハンドル基板から分離する工程
を有する。こうした製法であれば、特定の蛍光体素子を一つの蛍光体基板中に多数同時に成形することができるので、量産性を向上させることが可能である。
The production method of the present invention
Joining the second main surface of the phosphor substrate having a first main surface and a second main surface to a handle substrate,
Forming a phosphor portion by processing the first main surface of the phosphor substrate to form an opposing surface and side surfaces,
A step of forming a reflective film so as to cover the opposing surface and the side surface; and a step of separating the phosphor section from the handle substrate. According to such a manufacturing method, a large number of specific phosphor elements can be simultaneously formed in one phosphor substrate, so that mass productivity can be improved.
  好適な実施形態においては、蛍光体部の側面および対向面上に低屈折率層を成膜する工程を有しており、低屈折率層上に反射膜を成膜する。この製法によれば、本発明に係る蛍光体素子を高い生産性で得ることができる。 In a preferred embodiment, a step of forming a low-refractive-index layer on the side surface and the opposing surface of the phosphor section is provided, and a reflective film is formed on the low-refractive-index layer. According to this manufacturing method, the phosphor element according to the present invention can be obtained with high productivity.
  以下、図面を参照しつつ、本製法を例示する。
 図8(a)、図8(b)に示すように、ハンドル基板53上に接合層52を形成し、蛍光体板51と対向させ,ハンドル基板53上に蛍光体板51の第二の主面51bを接合する。
Hereinafter, the present production method will be exemplified with reference to the drawings.
As shown in FIGS. 8A and 8B, a bonding layer 52 is formed on a handle substrate 53 and is opposed to the phosphor plate 51. The surface 51b is joined.
 次いで、ハンドル基板53上の蛍光体板51の第一の主面51aを加工することで、必要な形態を有する蛍光体部を成形することができる。例えば、図8(b)の例では、接合層52上に、所望形状を有する蛍光体部2を成形している。こうした加工方法としては、ダイシング、スライシング、マイクログラインダー、レーザ加工、ウォータージェット、マイクロブラストを例示できる。 Next, by processing the first main surface 51a of the phosphor plate 51 on the handle substrate 53, a phosphor portion having a required form can be formed. For example, in the example of FIG. 8B, the phosphor section 2 having a desired shape is formed on the bonding layer 52. Examples of such a processing method include dicing, slicing, micro grinder, laser processing, water jet, and micro blast.
 次いで、好適な実施形態においては、図9に示すように、蛍光体部2上および接合層52上に低屈折率層54を形成する。次いで、図10に示すように、低屈折率層54上に反射膜55を形成する。 Next, in a preferred embodiment, as shown in FIG. 9, a low refractive index layer 54 is formed on the phosphor section 2 and on the bonding layer 52. Next, as shown in FIG. 10, a reflection film 55 is formed on the low refractive index layer 54.
 次いで、ハンドル基板および接合層を除去することによって、図1に示す蛍光体素子1が多数形成された基板を得ることができる。次いで、各蛍光体素子1を所定寸法に切り分けることができる。あるいは、複数の蛍光体素子1を切り分けることなく、蛍光体素子アレイとして利用することができる。 Next, by removing the handle substrate and the bonding layer, it is possible to obtain a substrate on which a large number of phosphor elements 1 shown in FIG. 1 are formed. Next, each phosphor element 1 can be cut into a predetermined size. Alternatively, a plurality of phosphor elements 1 can be used as a phosphor element array without being divided.
 低屈折率層、反射膜の成膜方法は特に限定されないが、蒸着法、スパッタ法、CVD法が好ましい。蒸着法の場合、イオンアシストを付加して成膜することもできる。 成膜 The method of forming the low refractive index layer and the reflective film is not particularly limited, but an evaporation method, a sputtering method, and a CVD method are preferable. In the case of a vapor deposition method, a film can be formed by adding ion assist.
 本発明製法によれば、反射膜(および必要に応じて低屈折率層)を一回の成膜工程で側面上および対向面上に成膜することができる。例えば、図2(b)のように側面と対向面が直交している場合は、側面上および対向面上に1回の成膜で同時に反射膜や低屈折率層を形成することができない。複数回成膜工程がある場合に、屈折率に分布ができてしまうことや工数がかかることによるコスト増となる可能性があるが、本製法ではその問題点が解消できる。 According to the production method of the present invention, a reflective film (and a low-refractive-index layer if necessary) can be formed on the side surface and the opposing surface in one film-forming step. For example, when the side surface and the opposing surface are orthogonal as shown in FIG. 2B, it is not possible to simultaneously form the reflective film and the low refractive index layer on the side surface and the opposing surface by one film formation. When there are a plurality of film forming steps, there is a possibility that the refractive index may be distributed or the number of steps may increase the cost, but this manufacturing method can solve the problem.
 更に、好適な実施形態においては、蛍光体部中に散乱材が分散されており、蛍光体部の厚み(入射面と対向面との間隔)が290μm以上、1.0mm以下であり、入射面に対する側面の傾斜角度θが25°以上、49°以下である。蛍光体部に散乱材が分散されており、かつ蛍光体部が比較的に薄い場合には、θが小さいときにも、高い発光効率と低い色むらを実現できることを見いだした。 Furthermore, in a preferred embodiment, a scattering material is dispersed in the phosphor portion, and the thickness of the phosphor portion (the distance between the incident surface and the opposing surface) is 290 μm or more and 1.0 mm or less, and the incident surface Is 25 ° or more and 49 ° or less. When the scattering material is dispersed in the phosphor portion and the phosphor portion is relatively thin, it has been found that high luminous efficiency and low color unevenness can be realized even when θ is small.
 本実施形態においては、蛍光体部の厚みT(入射面と対向面との間隔)は、300μm以上が更に好ましく、また、650μm以下が更に好ましい。また、入射面に対する側面の傾斜角度θは、30°以上が更に好ましく、また、46°以下であることが更に好ましい。 In the present embodiment, the thickness T (the distance between the incident surface and the facing surface) of the phosphor portion is more preferably 300 μm or more, and further preferably 650 μm or less. Further, the inclination angle θ of the side surface with respect to the incident surface is more preferably 30 ° or more, and further preferably 46 ° or less.
 蛍光体部に散乱材を分散させる場合には、散乱材としては、励起光および蛍光を吸収することがなく、かつ蛍光体と屈折率の差が大きいが好ましく、Al、SiO,TiO,ZrOを例示できる。 When a scattering material is dispersed in the phosphor portion, the scattering material preferably does not absorb the excitation light and the fluorescence and has a large difference in refractive index from the phosphor. Al 2 O 3 , SiO 2 , TiO 2 and ZrO 2 can be exemplified.
 また、好適な実施形態においては、蛍光体部内に散乱材が含有されておらず、入射面と対向面との間隔が290μm以上、1.0mm以下であり、入射面に対する前記側面の傾斜角度が25°以上、70°以下である。蛍光体部に散乱材が分散されており、かつ蛍光体部が比較的に薄い場合には、θが50°以上の場合だけでなく、θが小さいときにも、高い発光効率と低い色むらを実現できることを見いだした。 In a preferred embodiment, a scattering material is not contained in the phosphor part, the interval between the incident surface and the opposing surface is 290 μm or more and 1.0 mm or less, and the inclination angle of the side surface with respect to the incident surface is 25 ° or more and 70 ° or less. When the scattering material is dispersed in the phosphor part and the phosphor part is relatively thin, not only when θ is 50 ° or more but also when θ is small, high luminous efficiency and low color unevenness are obtained. Has been found to be possible.
 本実施形態においては、入射面に対する前記側面の傾斜角度が25°以上、42°以下であることが好ましく、また49°以上、65°以下であることが好ましい。入射面に対する前記側面の傾斜角度は40°以下がさらに好ましい。 In the present embodiment, the inclination angle of the side surface with respect to the incident surface is preferably 25 ° or more and 42 ° or less, and more preferably 49 ° or more and 65 ° or less. More preferably, the inclination angle of the side surface with respect to the incident surface is 40 ° or less.
 同じく蛍光体部が比較的に薄い場合であっても、蛍光体部に散乱材が含有されていない場合には、蛍光体部と散乱材が分散されている場合とは挙動が異なることを示す。 Similarly, even when the phosphor portion is relatively thin, if the phosphor portion does not contain a scattering material, the behavior is different from the case where the phosphor portion and the scattering material are dispersed. .
 図11は、本実施形態に係る蛍光体素子61を模式的に示す断面図である。
 図11に示す蛍光体素子61においては、蛍光体部62は、入射面62a、出射面62bおよび4つの側面62cを備えている。蛍光体部の横断面においては、蛍光体部は略台形をなしており、入射面62aに対する側面62cの角度θは90°より小さい鋭角、好ましくは49~25°となっている。そして、入射面2aの面積AIは対向面2bの面積ARよりも大きい。蛍光体部62中に、多数の散乱材63が分散されている。
FIG. 11 is a cross-sectional view schematically showing a phosphor element 61 according to the present embodiment.
In the phosphor element 61 shown in FIG. 11, the phosphor part 62 includes an incident surface 62a, an exit surface 62b, and four side surfaces 62c. In the cross section of the phosphor portion, the phosphor portion is substantially trapezoidal, and the angle θ of the side surface 62c with respect to the incident surface 62a is an acute angle smaller than 90 °, preferably 49 to 25 °. The area AI of the incident surface 2a is larger than the area AR of the opposing surface 2b. A large number of scattering materials 63 are dispersed in the phosphor part 62.
 蛍光体部62の側面62c上には低屈折率層3bが設けられており、対向面62b上には低屈折率層3aが設けられており、低屈折率層3aと3bとによって一体の低屈折率層3が形成されている。本例では、低屈折率層3は、蛍光体部62の側面62cおよび対向面62bを全面にわたって被覆している。更に、本例では、低屈折率層3a上に反射膜4aが設けられ、低屈折率層3b上に反射膜4bが設けられており、反射膜4aと4bとによって一体の反射膜4が形成されている。本例では、反射膜4は低屈折率層3を全面にわたって被覆している。 A low-refractive-index layer 3b is provided on a side surface 62c of the phosphor section 62, and a low-refractive-index layer 3a is provided on the opposing surface 62b. The low-refractive- index layers 3a and 3b form an integrated low-refractive-index layer. The refractive index layer 3 is formed. In this example, the low refractive index layer 3 covers the entire side surface 62c and the opposing surface 62b of the phosphor portion 62. Further, in this example, the reflection film 4a is provided on the low-refractive-index layer 3a, and the reflection film 4b is provided on the low-refractive-index layer 3b. The reflection films 4a and 4b form an integral reflection film 4. Have been. In this example, the reflection film 4 covers the low refractive index layer 3 over the entire surface.
 図11に示すように、本発明の蛍光体素子61では、蛍光体部62中に分散されている多数の蛍光体粒子5に対して、矢印Aのように入射した励起光があたる。すると,各蛍光体粒子5から矢印K1、K3、K5のように蛍光が放出される。このとき、各蛍光体粒子からは、あらゆる方向に向かって均等に蛍光が放射される傾向がある。これに加えて、かく蛍光体粒子から放射された蛍光は、更に散乱材によってあらゆる方向に向かって散乱され、蛍光が一層均一化される傾向がある。 As shown in FIG. 11, in the phosphor element 61 of the present invention, excitation light incident as shown by an arrow A impinges on many phosphor particles 5 dispersed in the phosphor part 62. Then, fluorescence is emitted from each phosphor particle 5 as indicated by arrows K1, K3, and K5. At this time, the fluorescent particles tend to emit fluorescence uniformly in all directions. In addition, the fluorescence emitted from the phosphor particles is further scattered in all directions by the scattering material, and the fluorescence tends to be more uniform.
  ここで、蛍光体粒子から入射面62aの方向に向かって放射される蛍光は、そのまま入射面62aから出射する。また蛍光体粒子から対向面62bに向かって矢印K3のように放射される蛍光は、低屈折率層3aで屈折した後反射膜4aで反射され、再び低屈折率層3aで屈折し、矢印K4のように入射面2aから出射する。矢印K1、K5のように斜めに放射される蛍光は、低屈折率層3a、3bで全反射され、矢印K2、K6のように入射面2aから出射する。このとき、蛍光体部62の入射面の面積AIが対向面の面積ARよりも大きくなっており、側面62cが傾斜していると、その傾斜角度θのぶんだけ反射光K2、K6の方向が傾斜面2aに向かって傾斜する。この結果、励起光が入射面62aから出射するまでの反射回数を減らすことができる。更に低屈折率層3a、3bの存在によって反射膜4での反射による光吸収と反射膜の温度上昇を抑制できる。 Here, the fluorescent light emitted from the phosphor particles in the direction of the incident surface 62a is emitted from the incident surface 62a as it is. Further, the fluorescent light emitted from the phosphor particles toward the facing surface 62b as shown by an arrow K3 is refracted by the low refractive index layer 3a, reflected by the reflective film 4a, refracted by the low refractive index layer 3a again, and The light exits from the incident surface 2a as shown in FIG. Fluorescent light emitted obliquely as indicated by arrows K1 and K5 is totally reflected by the low refractive index layers 3a and 3b and exits from the incident surface 2a as indicated by arrows K2 and K6. At this time, if the area AI of the incident surface of the phosphor portion 62 is larger than the area AR of the opposing surface and the side surface 62c is inclined, the directions of the reflected lights K2 and K6 are changed by the inclination angle θ. It inclines toward the inclined surface 2a. As a result, the number of reflections until the excitation light exits from the incident surface 62a can be reduced. Further, due to the presence of the low refractive index layers 3a and 3b, light absorption due to reflection on the reflection film 4 and a rise in temperature of the reflection film can be suppressed.
 図12に示す蛍光体素子61Aにおいては、蛍光体部62の入射面62a上に透明または透光性な支持基板7が形成されている。 In the phosphor element 61A shown in FIG. 12, the transparent or translucent support substrate 7 is formed on the incident surface 62a of the phosphor section 62.
 図13の蛍光体素子61Bにおいては、蛍光体部62、低屈折率層3、反射膜4は、図11の蛍光体素子61と同じである。しかし、本例では、蛍光体部62、低屈折率層3および反射膜4が、放熱基板8の凹部8c内に固定され、一体化されている。ただし、8aは、反射膜4aに接する薄板部であり、8bは厚さ一定のフランジ部であり、反射膜4bに接している に お い て In the phosphor element 61B of FIG. 13, the phosphor part 62, the low refractive index layer 3, and the reflection film 4 are the same as the phosphor element 61 of FIG. However, in the present embodiment, the phosphor portion 62, the low refractive index layer 3, and the reflection film 4 are fixed and integrated in the concave portion 8c of the heat dissipation substrate 8. However, 8a is a thin plate portion in contact with the reflection film 4a, and 8b is a flange portion having a constant thickness, which is in contact with the reflection film 4b.
(実施例1)
  図6、7に示す蛍光体素子41を、図8~図10を参照しつつ説明した製法で製造した。
  具体的には、Ceをドープし、かつセラミック散乱材を添加した厚み1mm、直径4インチのYAG(イットリウム・アルミニウム・ガーネット)多結晶からなる蛍光体板51を準備した。また、ハンドリング基板53として、厚み0.3mm、直径4インチのサファイアウエハーを用意した。蛍光体板51をハンドリング基板53に対して熱可塑性樹脂52を用いて100℃で貼り合わせを行い、その後、常温にもどして一体化した(図8(a))。
(Example 1)
The phosphor element 41 shown in FIGS. 6 and 7 was manufactured by the manufacturing method described with reference to FIGS.
Specifically, a phosphor plate 51 made of YAG (yttrium aluminum garnet) polycrystal having a thickness of 1 mm and a diameter of 4 inches doped with Ce and doped with a ceramic scattering material was prepared. A sapphire wafer having a thickness of 0.3 mm and a diameter of 4 inches was prepared as the handling substrate 53. The phosphor plate 51 was bonded to the handling substrate 53 using the thermoplastic resin 52 at 100 ° C., and then returned to room temperature and integrated (FIG. 8A).
  次に、幅100μm、#800のブレードを使用してダイシングによるセットバック加工を行った。次いで、蛍光体板を90度回転させて同様にダイシングによるセットバック加工を行い、蛍光体部2を形成した(図8(b))。入射面の幅を2mmとし、厚さを1mmとし、入射面に対する側面の傾斜θを63.5°とした。入射面の面積AIは4mmであり、対向面の面積は1mmである。各蛍光体部2の側面および対向面はダイシングによる加工面であるが、側面および対向面の算術平均粗さRaは10μmと見積もられた。 Next, setback processing by dicing was performed using a blade having a width of 100 μm and # 800. Next, the phosphor plate was rotated 90 degrees, and setback processing was similarly performed by dicing to form the phosphor portion 2 (FIG. 8B). The width of the incident surface was 2 mm, the thickness was 1 mm, and the inclination θ of the side surface with respect to the incident surface was 63.5 °. The area AI of the incident surface is 4 mm 2 , and the area of the facing surface is 1 mm 2 . The side surface and the opposing surface of each phosphor part 2 were processed surfaces by dicing, and the arithmetic average roughness Ra of the side surface and the opposing surface was estimated to be 10 μm.
  次いで、蛍光体部の対向面2bおよび側面2cに対して、スパッタリングにて、Alからなる低屈折率層54を0.5μmの厚みで成膜した(図9参照)。さらに、Al合金膜からなる反射膜55を、低屈折率層54上に0.5μmの厚みで成膜した(図10)。成膜後、ホットプレートで基板を100℃に加熱し、図1に示すような蛍光体素子1をハンドリング基板53から分離し、有機溶剤にて接着剤を洗浄した。
  次に、幅20mm×長さ20mm、厚み2mmの無酸素銅からなる放熱基板8を準備した。この放熱基板8の中央に溝を形成し、蛍光体素子1を埋設し、図6、図7に示す蛍光体素子41を得た。
Next, a low-refractive-index layer 54 of Al 2 O 3 was formed to a thickness of 0.5 μm on the facing surface 2b and the side surface 2c of the phosphor section by sputtering (see FIG. 9). Further, a reflective film 55 made of an Al alloy film was formed on the low refractive index layer 54 with a thickness of 0.5 μm (FIG. 10). After the film formation, the substrate was heated to 100 ° C. with a hot plate, the phosphor element 1 as shown in FIG. 1 was separated from the handling substrate 53, and the adhesive was washed with an organic solvent.
Next, a heat dissipation substrate 8 made of oxygen-free copper having a width of 20 mm × a length of 20 mm and a thickness of 2 mm was prepared. A groove was formed in the center of the heat dissipation substrate 8, and the phosphor element 1 was buried, thereby obtaining a phosphor element 41 shown in FIGS.
 出力3WのGaN系青色レーザを10個アレイ化し、出力30Wの光源を得た。この光源からレーザ光を蛍光体素子に照射し、照明光の評価を行った。各例の素子の評価結果を表1に示す。 10 10 GaN blue lasers with an output of 3 W were arrayed to obtain a light source with an output of 30 W. The phosphor element was irradiated with laser light from this light source, and the illumination light was evaluated. Table 1 shows the evaluation results of the devices of each example.
(白色光出力)
 白色光出力(平均出力)は、全光束の時間平均を表す。全光束測定は,積分球(球形光束計)を使用して、被測定光源と全光束が値付けられた標準光源とを同じ位置で点灯し、その比較によって行う。詳細には、JISC7801にて規定されている方法を用いて測定を行った。
(White light output)
The white light output (average output) represents the time average of the total luminous flux. The total luminous flux measurement is performed by using an integrating sphere (spherical luminometer) to turn on the light source to be measured and the standard light source for which the total luminous flux is priced at the same position, and to compare the light sources. Specifically, the measurement was performed using the method specified in JISC7801.
(色ムラ面内分布)
 出力した光を輝度分布測定装置を用いて色度図で評価を行った。そして、色度図において、中央値x:0.3447±0.005、y:0.3553±0.005の範囲にある場合は「色ムラなし」とし、この範囲外の場合には「色ムラあり」とした。
(Distribution in color unevenness plane)
The output light was evaluated by a chromaticity diagram using a luminance distribution measuring device. Then, in the chromaticity diagram, when the median value is within the range of x: 447 ± 0.005 and y: 0.3553 ± 0.005, “no color unevenness” is set. There is unevenness. "
Figure JPOXMLDOC01-appb-T000001
 
 
Figure JPOXMLDOC01-appb-T000001
 
 
(比較例1)
 図3(b)に示す断面を有する蛍光体素子21を作製した。作製方法は実施例1と同様に行った。しかし、Alからなる低屈折率層23は、蛍光体部の対向面には設けることなく、側面上にのみスパッタリングにて複数回に分けて成膜した。そして、Al合金膜からなる反射膜24を、低屈折率層上および対向面上に0.5μmの厚みで成膜した。得られた素子を、実施例1と同様にして放熱基板8に固定した。
(Comparative Example 1)
A phosphor element 21 having a cross section shown in FIG. The fabrication method was the same as in Example 1. However, the low-refractive-index layer 23 made of Al 2 O 3 was not formed on the opposing surface of the phosphor portion, but was formed only on the side surface by sputtering multiple times. Then, a reflective film 24 made of an Al alloy film was formed with a thickness of 0.5 μm on the low refractive index layer and the opposing surface. The obtained device was fixed to the heat dissipation board 8 in the same manner as in Example 1.
  得られた蛍光体素子について、実施例1と同様にして照明光の評価を行った。各例の素子の評価結果を表2に示す。 照明 The obtained phosphor element was evaluated for illumination light in the same manner as in Example 1. Table 2 shows the evaluation results of the devices of each example.
Figure JPOXMLDOC01-appb-T000002
 
 
Figure JPOXMLDOC01-appb-T000002
 
 
 実施例1の蛍光体素子の場合には、白色光出力が相対的に高く、かつ色ムラがみられなかった。比較例1の蛍光体素子では、白色光出力が低くなり、色ムラが観測された。 場合 In the case of the phosphor element of Example 1, the white light output was relatively high and no color unevenness was observed. In the phosphor element of Comparative Example 1, the white light output was low, and color unevenness was observed.
(比較例2)
 図4に示す蛍光体素子26を、図8~図10を参照しつつ説明した製法で製造した。
 具体的には、Ceをドープし、かつセラミック散乱材を添加した厚み1mm、直径4インチのYAG(イットリウム・アルミニウム・ガーネット)多結晶からなる蛍光体板51を準備した。また、ハンドリング基板53として、厚み0.3mm、直径4インチのサファイアウエハーを用意した。蛍光体板51をハンドリング基板53に対して熱可塑性樹脂52を用いて100℃で貼り合わせを行い、その後、常温にもどして一体化した(図8(a))。
(Comparative Example 2)
The phosphor element 26 shown in FIG. 4 was manufactured by the manufacturing method described with reference to FIGS.
Specifically, a phosphor plate 51 made of YAG (yttrium aluminum garnet) polycrystal having a thickness of 1 mm and a diameter of 4 inches doped with Ce and doped with a ceramic scattering material was prepared. A sapphire wafer having a thickness of 0.3 mm and a diameter of 4 inches was prepared as the handling substrate 53. The phosphor plate 51 was bonded to the handling substrate 53 using the thermoplastic resin 52 at 100 ° C., and then returned to room temperature and integrated (FIG. 8A).
  次に、幅100μm、#800のブレードを使用してダイシングによるセットバック加工を行った。次いで、蛍光体板を90度回転させて同様にダイシングによるセットバック加工を行い、蛍光体部2を形成した(図8(b))。入射面の幅を2mmとし、厚さを1mmとし、入射面に対する側面の傾斜θを63.5°とした。入射面の面積AIは4mmである。各蛍光体部2の側面および対向面はダイシングによる加工面であるが、側面および対向面の算術平均粗さRaは10μmと見積もられた。 Next, setback processing by dicing was performed using a blade having a width of 100 μm and # 800. Next, the phosphor plate was rotated 90 degrees, and setback processing was similarly performed by dicing to form the phosphor portion 2 (FIG. 8B). The width of the incident surface was 2 mm, the thickness was 1 mm, and the inclination θ of the side surface with respect to the incident surface was 63.5 °. The area AI of the incident surface is 4 mm 2 . The side surface and the opposing surface of each phosphor part 2 were processed surfaces by dicing, and the arithmetic average roughness Ra of the side surface and the opposing surface was estimated to be 10 μm.
  次いで、Alからなる低屈折率層27は、蛍光体部の側面には設けることなく、対向面上にのみスパッタリングにて成膜した。そして、Al合金膜からなる反射膜4を、低屈折率層上および側面上に0.5μmの厚みで成膜した。成膜後、ホットプレートで基板を100℃に加熱し、図4に示すような蛍光体素子26をハンドリング基板53から分離し、有機溶剤にて接着剤を洗浄した。
  次に、幅20mm×長さ20mm、厚み2mmの無酸素銅からなる放熱基板8を準備した。この放熱基板8の中央に溝を形成し、図6、図7に示すように,放熱基板8の凹部に蛍光体素子を固定した。
Next, the low refractive index layer 27 made of Al 2 O 3 was formed by sputtering only on the opposing surface without being provided on the side surface of the phosphor portion. Then, a reflective film 4 made of an Al alloy film was formed with a thickness of 0.5 μm on the low refractive index layer and the side surfaces. After the film formation, the substrate was heated to 100 ° C. with a hot plate, the phosphor element 26 as shown in FIG. 4 was separated from the handling substrate 53, and the adhesive was washed with an organic solvent.
Next, a heat dissipation substrate 8 made of oxygen-free copper having a width of 20 mm × a length of 20 mm and a thickness of 2 mm was prepared. A groove was formed in the center of the heat radiating substrate 8, and the phosphor element was fixed in the concave portion of the heat radiating substrate 8, as shown in FIGS.
 出力3WのGaN系青色レーザを10個アレイ化し、出力30Wの光源を得た。この光源からレーザ光を蛍光体素子に照射し、照明光の評価を行った。各例の素子の評価結果を表3に示す。 10 10 GaN blue lasers with an output of 3 W were arrayed to obtain a light source with an output of 30 W. The phosphor element was irradiated with laser light from this light source, and the illumination light was evaluated. Table 3 shows the evaluation results of the devices of each example.
Figure JPOXMLDOC01-appb-T000003
 
 
Figure JPOXMLDOC01-appb-T000003
 
 
  実施例1の蛍光体素子の場合には、白色光出力が相対的に高く、かつ色ムラがみられなかった。比較例2の蛍光体素子では、白色光出力が低くなり、色ムラが観測された。 場合 In the case of the phosphor element of Example 1, the white light output was relatively high and no color unevenness was observed. In the phosphor element of Comparative Example 2, the white light output was low, and color unevenness was observed.
(実施例2~6)
 図13に示す蛍光体素子61Bを、図8~図10を参照しつつ説明した製法で製造した。
 具体的には、Ceをドープし、かつセラミック散乱材を添加した厚み1mm、直径4インチのYAG(イットリウム・アルミニウム・ガーネット)多結晶からなる蛍光体板51を準備した。また、ハンドリング基板53として、厚み0.3mm、直径4インチのサファイアウエハーを用意した。蛍光体板51をハンドリング基板53に対して熱可塑性樹脂52を用いて100℃で貼り合わせを行い、その後、常温にもどして一体化した(図8(a))。
(Examples 2 to 6)
The phosphor element 61B shown in FIG. 13 was manufactured by the manufacturing method described with reference to FIGS.
Specifically, a phosphor plate 51 made of YAG (yttrium aluminum garnet) polycrystal having a thickness of 1 mm and a diameter of 4 inches doped with Ce and doped with a ceramic scattering material was prepared. A sapphire wafer having a thickness of 0.3 mm and a diameter of 4 inches was prepared as the handling substrate 53. The phosphor plate 51 was bonded to the handling substrate 53 using the thermoplastic resin 52 at 100 ° C., and then returned to room temperature and integrated (FIG. 8A).
 次に、幅100μm、#800のブレードを使用してダイシングによるセットバック加工を行った。次いで、蛍光体板を90度回転させて同様にダイシングによるセットバック加工を行い、蛍光体部62を形成した(図8(b))。入射面の幅を2mmとし、厚さを0.29mmとし、入射面に対する側面の傾斜θを25°、45°、49°、50°、63.5°とした。入射面の面積AIは4mmである。各蛍光体部62の側面および対向面はダイシングによる加工面であるが、側面および対向面の算術平均粗さRaは10μmと見積もられた。 Next, setback processing by dicing was performed using a blade having a width of 100 μm and # 800. Next, the phosphor plate was rotated by 90 degrees and setback processing was similarly performed by dicing to form the phosphor portion 62 (FIG. 8B). The width of the incident surface was 2 mm, the thickness was 0.29 mm, and the inclination θ of the side surface with respect to the incident surface was 25 °, 45 °, 49 °, 50 °, and 63.5 °. The area AI of the incident surface is 4 mm 2 . The side surface and the opposing surface of each phosphor portion 62 are surfaces processed by dicing, and the arithmetic average roughness Ra of the side surface and the opposing surface was estimated to be 10 μm.
  次いで、蛍光体部の対向面62bおよび側面62cに対して、スパッタリングにて、Alからなる低屈折率層54を0.5μmの厚みで成膜した(図9参照)。さらに、Al合金膜からなる反射膜55を、低屈折率層54上に0.5μmの厚みで成膜した(図10)。成膜後、ホットプレートで基板を100℃に加熱し、図11に示すような蛍光体素子61をハンドリング基板53から分離し、有機溶剤にて接着剤を洗浄した。 Next, a low-refractive-index layer 54 of Al 2 O 3 was formed to a thickness of 0.5 μm on the facing surface 62b and the side surface 62c of the phosphor section by sputtering (see FIG. 9). Further, a reflective film 55 made of an Al alloy film was formed on the low refractive index layer 54 with a thickness of 0.5 μm (FIG. 10). After the film formation, the substrate was heated to 100 ° C. with a hot plate, the phosphor element 61 as shown in FIG. 11 was separated from the handling substrate 53, and the adhesive was washed with an organic solvent.
 次に、幅20mm×長さ20mm、厚み2mmの無酸素銅からなる放熱基板8を準備した。この放熱基板8の中央に溝を形成し、蛍光体素子61を埋設し、図13に示す蛍光体素子61Bを得た。 Next, a heat dissipation board 8 made of oxygen-free copper having a width of 20 mm, a length of 20 mm, and a thickness of 2 mm was prepared. A groove was formed in the center of the heat dissipation substrate 8, and the phosphor element 61 was buried to obtain a phosphor element 61B shown in FIG.
 出力3WのGaN系青色レーザを10個アレイ化し、出力30Wの光源を得た。この光源からレーザ光を蛍光体素子に照射し(スポットサイズ直径1.9mm)、照明光の評価を行った。各例の素子の評価結果を表4に示す。 10 10 GaN blue lasers with an output of 3 W were arrayed to obtain a light source with an output of 30 W. The phosphor element was irradiated with laser light from the light source (spot size diameter: 1.9 mm), and the illumination light was evaluated. Table 4 shows the evaluation results of the devices of each example.
Figure JPOXMLDOC01-appb-T000004
 
 
Figure JPOXMLDOC01-appb-T000004
 
 
 表4の結果からわかるように、白色光の出力を高くでき、かつ色ムラも防止できることが判明した。特に、蛍光体部中に散乱材を分散させた場合には、入射面に対する側面の傾斜角度θを49°~25°と小さくした場合にも、かえって白色光出力が向上するという予想外の結果が得られた。また傾斜角度を20°よりも小さくすると、外周部の薄い領域で励起光が対向面から直接反射して出力される影響で色ムラが発生する結果となった
 蛍光体の厚みを400μmにしても、傾斜角度θを49°~25°と小さくすると、かえって白色光出力が向上した。
As can be seen from the results in Table 4, it was found that the output of white light could be increased and color unevenness could be prevented. In particular, when the scattering material is dispersed in the phosphor part, even when the inclination angle θ of the side surface with respect to the incident surface is reduced to 49 ° to 25 °, the unexpected result that the white light output is rather improved. was gotten. Further, when the inclination angle is smaller than 20 °, color unevenness occurs due to the effect that the excitation light is directly reflected from the facing surface and output in the thin region of the outer peripheral portion. Even when the thickness of the phosphor is 400 μm, When the inclination angle θ was reduced to 49 ° to 25 °, the white light output was improved.
(比較例3)
 図3(b)に示す断面を有する蛍光体素子21を、比較例1と同様にして作製した。作製方法は比較例1と同じとした。ただし、蛍光体部中にセラミック散乱材を分散させ、入射面に対する側面の傾斜θは、45°とした。得られた蛍光体素子を、実施例1と同様にして放熱基板8に固定した。
(Comparative Example 3)
A phosphor element 21 having a cross section shown in FIG. 3B was produced in the same manner as in Comparative Example 1. The manufacturing method was the same as in Comparative Example 1. However, the ceramic scattering material was dispersed in the phosphor portion, and the inclination θ of the side surface with respect to the incident surface was 45 °. The obtained phosphor element was fixed to the heat dissipation substrate 8 in the same manner as in Example 1.
(比較例4)
 図4に示す断面を有する蛍光体素子を、比較例2と同様にして作製した。作製方法は比較例2と同じとした。ただし、蛍光体部中にセラミック散乱材を分散させ、入射面に対する側面の傾斜θは、45°とした。得られた蛍光体素子を、実施例1と同様にして放熱基板8に固定した。
(Comparative Example 4)
A phosphor element having a cross section shown in FIG. 4 was produced in the same manner as in Comparative Example 2. The manufacturing method was the same as Comparative Example 2. However, the ceramic scattering material was dispersed in the phosphor portion, and the inclination θ of the side surface with respect to the incident surface was 45 °. The obtained phosphor element was fixed to the heat dissipation substrate 8 in the same manner as in Example 1.
 実施例3、比較例3、比較例4の各蛍光体素子について、実施例2~6と同様にして照明光の評価を行った。各例の素子の評価結果を表5に示す。 照明 Each of the phosphor elements of Example 3, Comparative Example 3, and Comparative Example 4 was evaluated for illumination light in the same manner as in Examples 2 to 6. Table 5 shows the evaluation results of the devices of each example.
Figure JPOXMLDOC01-appb-T000005
 
 
Figure JPOXMLDOC01-appb-T000005
 
 
 実施例3の蛍光体素子の場合には、白色光出力が相対的に高く、かつ色ムラがみられなかった。比較例3、4の蛍光体素子では、白色光出力が相対的に低くなり、色ムラが観測された。 場合 In the case of the phosphor element of Example 3, the white light output was relatively high and no color unevenness was observed. In the phosphor elements of Comparative Examples 3 and 4, the white light output was relatively low, and color unevenness was observed.
 以下、実施例1および実施例2において、それぞれ入射面に対する側面の傾斜角度θを、図14に示すように変更した。前述したように、実施例1は、図1、6、7に示すような形態の蛍光体素子であり、散乱材が蛍光体部中に分散されていない。一方、実施例2は、図11、13に示すような形態の蛍光体素子であり、散乱材が蛍光体部中に分散されている。また、傾斜角度θは、85°、63.5°、50°、49°、45°、39°、31°、25°に変更した。得られた白色光のパワー効率を図14に示す。 Hereinafter, in Example 1 and Example 2, the inclination angle θ of the side surface with respect to the incident surface was changed as shown in FIG. As described above, the first embodiment is a phosphor element having a configuration as shown in FIGS. 1, 6, and 7, in which the scattering material is not dispersed in the phosphor portion. On the other hand, Example 2 is a phosphor element having a form as shown in FIGS. 11 and 13, in which a scattering material is dispersed in the phosphor portion. The inclination angle θ was changed to 85 °, 63.5 °, 50 °, 49 °, 45 °, 39 °, 31 °, and 25 °. FIG. 14 shows the power efficiency of the obtained white light.
 この結果、散乱材が蛍光体部に分散されている場合には、特に傾斜角θが25°以上、49°以下のときに、パワー効率(蛍光パワー/励起光パワー)が特に高くなることがわかった。 As a result, when the scattering material is dispersed in the phosphor portion, the power efficiency (fluorescent power / excitation light power) may be particularly high particularly when the inclination angle θ is 25 ° or more and 49 ° or less. all right.
 一方、散乱材が蛍光体部に含有されていない場合、傾斜角が25°以上、70°以下の範囲内のときに、パワー効率が特に高くなることがわかった。特に好ましくは、記入射面に対する側面の傾斜角度θが25°以上、42°以下または49°以上、65°以下である場合にパワー効率が高くなった。 On the other hand, it was found that when the scattering material was not contained in the phosphor portion, the power efficiency was particularly high when the inclination angle was in the range of 25 ° or more and 70 ° or less. Particularly preferably, the power efficiency is increased when the inclination angle θ of the side surface with respect to the incident surface is 25 ° or more, 42 ° or less, or 49 ° or more and 65 ° or less.

Claims (26)

  1.  励起光の入射面、前記入射面に対向する対向面および側面を備えている蛍光体部であって、前記入射面に入射する前記励起光の少なくとも一部を蛍光に変換し、前記蛍光を前記入射面から出射させる蛍光体部、
      前記蛍光体部の前記側面上および前記対向面上にあり、前記蛍光体部の屈折率よりも低い屈折率を有する一体の低屈折率層、および
      前記低屈折率層の表面を被覆する一体の反射膜
    を備えており、前記蛍光体部の前記入射面の面積が前記対向面の面積よりも大きいことを特徴とする、蛍光体素子。
    An incident surface of the excitation light, a phosphor portion having an opposing surface and a side surface facing the incident surface, wherein at least a part of the excitation light incident on the incident surface is converted into fluorescent light, and the fluorescent light is converted into the fluorescent light. A phosphor portion emitted from the incident surface,
    An integrated low-refractive-index layer having a refractive index lower than the refractive index of the phosphor section, on the side surface and the opposing surface of the phosphor section; and an integral low-refractive-index layer covering the surface of the low-refractive-index layer. A phosphor element, comprising a reflective film, wherein the area of the incident surface of the phosphor section is larger than the area of the facing surface.
  2.   前記入射面に対する前記側面の傾斜角度が50°以上、85°以下であることを特徴とする、請求項1記載の蛍光体素子。 The phosphor element according to claim 1, wherein an inclination angle of the side surface with respect to the incident surface is not less than 50 ° and not more than 85 °.
  3.  前記蛍光体部内に散乱材が分散されており、前記入射面と前記対向面との間隔が290μm以上、1.0mm以下であり、前記入射面に対する前記側面の傾斜角度が25°以上、49°以下であることを特徴とする、請求項1記載の蛍光体素子。 A scattering material is dispersed in the phosphor part, a distance between the incident surface and the opposing surface is 290 μm or more and 1.0 mm or less, and an inclination angle of the side surface with respect to the incident surface is 25 ° or more and 49 ° or more. The phosphor element according to claim 1, wherein:
  4.  前記散乱材がセラミック散乱材であることを特徴とする、請求項3記載の蛍光体素子。 4. The phosphor element according to claim 3, wherein the scattering material is a ceramic scattering material.
  5.  前記蛍光体部内に散乱材が含有されておらず、前記入射面と前記対向面との間隔が290μm以上、1.0mm以下であり、前記入射面に対する前記側面の傾斜角度が25°以上、70°以下であることを特徴とする、請求項1記載の蛍光体素子。 A scattering material is not contained in the phosphor part, a distance between the incident surface and the facing surface is 290 μm or more and 1.0 mm or less, and an inclination angle of the side surface with respect to the incident surface is 25 ° or more and 70 ° or more. The phosphor element according to claim 1, wherein the angle is equal to or less than 0 °.
  6.  前記入射面に対する前記側面の傾斜角度が25°以上、42°以下または49°以上、65°以下であることを特徴とする、請求項5記載の蛍光体素子。 The phosphor element according to claim 5, wherein an inclination angle of the side surface with respect to the incident surface is 25 ° or more, 42 ° or less, or 49 ° or more and 65 ° or less.
  7.  前記励起光および前記蛍光を透過する透過性材料からなる支持基板を前記入射面上に備えることを特徴とする、請求項1~6のいずれか一つの請求項に記載の蛍光体素子。 (7) The phosphor element according to any one of (1) to (6), wherein a support substrate made of a transmissive material that transmits the excitation light and the fluorescence is provided on the incident surface.
  8.  前記反射膜と接する放熱基板を備えていることを特徴とする、請求項1~7のいずれか一つの請求項に記載の蛍光体素子。 (8) The phosphor element according to any one of (1) to (7), further comprising a heat dissipation substrate in contact with the reflection film.
  9.   前記放熱基板が、熱伝導率が200W/mK以上の材質からなることを特徴とする、請求項8記載の蛍光体素子。 The phosphor element according to claim 8, wherein the heat dissipation board is made of a material having a thermal conductivity of 200 W / mK or more.
  10.  前記放熱基板が、熱伝導率が200W/mK以上、500W/mK以下の金属、あるいは、セラミックスからなることを特徴とする、請求項9記載の蛍光体素子。 10. The phosphor element according to claim 9, wherein the heat radiating substrate is made of a metal having a thermal conductivity of 200 W / mK or more and 500 W / mK or less, or a ceramic.
  11.  前記金属が、金、銀、銅、アルミニウム、あるいは、これらの金属を含む合金であることを特徴とする、請求項10記載の蛍光体素子。 The phosphor element according to claim 10, wherein the metal is gold, silver, copper, aluminum, or an alloy containing these metals.
  12.  前記セラミックスがシリコンカーバイドまたは窒化アルミニウムであることを特徴とする、請求項10記載の蛍光体素子。 11. The phosphor element according to claim 10, wherein the ceramic is silicon carbide or aluminum nitride.
  13.  レーザ光を発振する光源、および請求項1~12のいずれか一つの請求項に記載の蛍光体素子を備えることを特徴とする、照明装置。 照明 An illuminating device comprising: a light source that oscillates a laser beam; and the phosphor element according to any one of claims 1 to 12.
  14.   励起光の入射面、前記入射面に対向する対向面および側面を備えている蛍光体部であって、前記入射面に入射する前記励起光の少なくとも一部を蛍光に変換し、前記蛍光を前記入射面から出射させる蛍光体部、および
      前記蛍光体部を被覆する一体の反射膜
    を備えており、前記蛍光体部の前記入射面の面積が前記対向面の面積よりも大きい蛍光体素子を製造する方法であって、
      第一の主面と第二の主面を有する蛍光体基板の前記第二の主面をハンドル基板に対して接合する工程、
      前記蛍光体基板の前記第一の主面を加工して前記対向面および前記側面を形成することによって前記蛍光体部を形成する工程、
      前記対向面および前記側面を被覆するように前記反射膜を成膜する工程、および
      前記蛍光体部を前記ハンドル基板から分離する工程
    を有することを特徴とする、蛍光体素子の製造方法。
    An incident surface of the excitation light, a phosphor portion having an opposing surface and a side surface facing the incident surface, wherein at least a part of the excitation light incident on the incident surface is converted into fluorescent light, and the fluorescent light is converted into the fluorescent light. A phosphor element that emits light from an incident surface, and an integrated reflective film that covers the phosphor part, wherein a phosphor element in which the area of the incident surface of the phosphor part is larger than the area of the facing surface is manufactured. A way to
    Joining the second main surface of the phosphor substrate having a first main surface and a second main surface to a handle substrate,
    Forming the phosphor portion by processing the first main surface of the phosphor substrate to form the opposing surface and the side surface;
    A method of manufacturing a phosphor element, comprising: a step of forming the reflection film so as to cover the facing surface and the side surface; and a step of separating the phosphor part from the handle substrate.
  15.   前記蛍光体部の前記側面および前記対向面上に前記低屈折率層を成膜する工程を有しており、前記低屈折率層上に前記反射膜を成膜することを特徴とする、請求項14記載の方法。 A step of forming the low-refractive-index layer on the side surface and the opposing surface of the phosphor section, wherein the reflective film is formed on the low-refractive-index layer. Item 15. The method according to Item 14.
  16.   前記入射面に対する前記側面の傾斜角度が50°以上、85°以下であることを特徴とする、請求項14または15記載の方法。 16. The method according to claim 14, wherein an inclination angle of the side surface with respect to the incident surface is not less than 50 ° and not more than 85 °.
  17.  前記蛍光体部内に散乱材が分散されており、前記入射面と前記対向面との間隔が290μm以上、1.0mm以下であり、前記入射面に対する前記側面の傾斜角度が25°以上、49°以下であることを特徴とする、請求項14または15記載の方法。 A scattering material is dispersed in the phosphor part, a distance between the incident surface and the opposing surface is 290 μm or more and 1.0 mm or less, and an inclination angle of the side surface with respect to the incident surface is 25 ° or more and 49 ° or more. The method according to claim 14, wherein:
  18. 前記散乱材がセラミック散乱材であることを特徴とする、請求項17記載の方法。 The method of claim 17, wherein the scattering material is a ceramic scattering material.
  19.  前記蛍光体部内に散乱材が含有されておらず、前記入射面と前記対向面との間隔が290μm以上、1.0mm以下であり、前記入射面に対する前記側面の傾斜角度が25°以上、70°以下であることを特徴とする、請求項14または15記載の方法。 A scattering material is not contained in the phosphor part, a distance between the incident surface and the facing surface is 290 μm or more and 1.0 mm or less, and an inclination angle of the side surface with respect to the incident surface is 25 ° or more and 70 ° or more. The method according to claim 14 or 15, characterized in that it is less than or equal to °.
  20.  前記入射面に対する前記側面の傾斜角度が25°以上、42°以下または49°以上、65°以下であることを特徴とする、請求項19記載の方法。 20. The method according to claim 19, wherein an inclination angle of the side surface with respect to the incident surface is 25 ° or more and 42 ° or less or 49 ° or more and 65 ° or less.
  21.   前記励起光および前記蛍光を透過する透過性材料からなる支持基板を前記入射面上に設けることを特徴とする、請求項14~20のいずれか一つの請求項に記載の方法。 The method according to any one of claims 14 to 20, wherein a support substrate made of a transparent material that transmits the excitation light and the fluorescence is provided on the incident surface.
  22.   前記反射膜と接する放熱基板を設けることを特徴とする、請求項14~21のいずれか一つの請求項に記載の方法。 The method according to any one of claims 14 to 21, further comprising: providing a heat dissipation substrate in contact with the reflection film.
  23.   前記放熱基板が、熱伝導率が200W/mK以上の材質からなることを特徴とする、請求項22記載の方法。 23. The method according to claim 22, wherein the heat radiating substrate is made of a material having a thermal conductivity of 200 W / mK or more.
  24.  前記放熱基板が、熱伝導率が200W/mK以上、500W/mK以下の金属、あるいはセラミックスからなることを特徴とする、請求項23記載の方法。 24. The method according to claim 23, wherein the heat radiating substrate is made of a metal or a ceramic having a thermal conductivity of 200 W / mK or more and 500 W / mK or less.
  25.  前記セラミックスがシリコンカーバイドまたは窒化アルミニウムであることを特徴とする、請求項24記載の方法。 25. The method according to claim 24, wherein the ceramic is silicon carbide or aluminum nitride.
  26.  前記金属が、金、銀、銅、アルミニウム、あるいは、これらの金属を含む合金であることを特徴とする、請求項24記載の方法。 The method according to claim 24, wherein the metal is gold, silver, copper, aluminum, or an alloy containing these metals.
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