WO2020025397A1

WO2020025397A1 - Conversion elements and method for producing same

Info

Publication number: WO2020025397A1
Application number: PCT/EP2019/069822
Authority: WO
Inventors: Britta GÖÖTZ; Norwin Von Malm
Original assignee: Osram Oled Gmbh
Priority date: 2018-08-02
Filing date: 2019-07-23
Publication date: 2020-02-06
Also published as: DE102018118823A1

Abstract

The invention relates to a method for producing a plurality of conversion elements (1a), the method comprising the following steps: providing a matrix material (2), which is transmissive to primary radiation, introducing luminophore particles (3) into the matrix material (2), which luminophore particles are designed to convert part of the primary radiation into secondary radiation, heating the matrix material (2) having the luminophore particles (3) to a first temperature (T1), and cooling the matrix material (2) having the luminophore particles (3) to a second temperature (T2), wherein: during the cooling, the plurality of conversion elements (1a) is produced in a first solid state, and the conversion elements (1a) each have a greatest lateral extent between 90 µm and 125 µm. The invention further relates to a method for producing an optoelectronic component, to a conversion element and to an optoelectronic component.

Description

description

A method for producing a large number of conversion elements and a method for producing an optoelectronic component are specified. In addition, a conversion element and an optoelectronic component are specified.

One object to be solved is a method for producing a large number of conversion elements

specify that are particularly easy to process. In addition, a conversion element and an optoelectronic

Component can be specified.

According to at least one embodiment of the method for producing a large number of conversion elements, a matrix material is provided which is permeable to a

Primary radiation is formed. The matrix material preferably has a transmissivity for the

electromagnetic primary radiation and / or one

electromagnetic secondary radiation of at least 90%.

According to at least one embodiment of the method, phosphor particles are introduced into the matrix material which are designed to convert part of the primary radiation into secondary radiation. That is, the

Fluorescent particles can each be electromagnetic Convert primary radiation into electromagnetic secondary radiation of a different wavelength range. In particular, the secondary radiation can have longer wavelengths than that

Include primary radiation. For example, the primary electromagnetic radiation is blue or ultraviolet light. The electromagnetic

Secondary radiation can be green, yellow or red light, for example.

The phosphor particles are distributed in the matrix material. For example, one of the following materials is suitable for the phosphor particles: garnets doped with rare earths, alkaline earth metal sulfides doped with rare earths, thiogallates doped with rare earths, aluminates doped with rare earths, silicates doped with rare earths, orthosilicates doped with rare earths, with rare earths doped chlorosilicates, doped with rare earths

Alkaline earth silicon nitrides, doped with rare earths

Oxynitride, rare earth doped aluminum oxynitride, rare earth doped silicon nitride, rare earth sialone, quantum dots. Furthermore, the phosphor particles can consist of one of the materials mentioned.

According to at least one embodiment of the method, the matrix material is heated to a first temperature.

For example, the phosphor particles can be introduced into the matrix material before or after heating the matrix material. In both cases, the matrix material with the phosphor particles has the first temperature at the end of the heating process. The first temperature is

preferably between 30 ° C up to and including 150 ° C, in particular between 100 ° C up to and including

including 120 ° C.

In accordance with at least one embodiment of the method, the matrix material with the phosphor particles is cooled to a second temperature that is lower than the first temperature. The second temperature is preferably between 0 ° C and 30 ° C inclusive, in particular between 20 ° C and 25 ° C inclusive.

According to at least one embodiment, the plurality of conversion elements is generated in a first solid state during cooling. The plurality of conversion elements is in the first solid state in a solid state in which the mixture of matrix material and

Fluorescent particles are no longer flowable. In particular, the first solid state can be a first solid phase.

According to at least one embodiment of the method, the conversion elements each have a largest lateral one

Expansion between 90 ym and 125 ym. The conversion elements of the plurality of conversion elements preferably have a round shape. Within the scope of the manufacturing tolerances, the round shape can be an ellipsoid or a sphere. The diameter of the ball deviates at most by 20% from an average diameter.

Do the conversion elements each have the shape of

Ellipsoids, each ellipsoid is spanned, for example, by three differently sized, orthogonal axes. The largest axis determines the greatest lateral extent. In at least one embodiment, the method for producing a large number of conversion elements comprises the following steps:

Provision of a matrix material which is transparent to primary radiation,

Introducing phosphor particles into the matrix material which are designed to convert part of the primary radiation into secondary radiation,

- Heating the matrix material with the phosphor particles to a first temperature, and

Cooling the matrix material with the phosphor particles to a second temperature, wherein

- When cooling, the plurality of conversion elements is generated in a first solid state, and

- The conversion elements have a greatest lateral extent between 90 ym and 125 ym.

It is particularly possible that the method is carried out in the order described.

One idea of the method described here for producing a large number of conversion elements is, inter alia, that the conversion elements are not produced on a carrier or chip. This means that the conversion elements are produced in a separate process. The conversion elements produced in this way can advantageously follow

sorted with regard to their size and / or their phosphor density. By sorting one

comparatively higher yield can be achieved when converting. Furthermore, the separate generation of

Conversion elements represent a simplification of a process chain. In accordance with at least one embodiment of the method, the matrix material with the phosphor particles is in a first flowable state at the first temperature. An aggregate state of the matrix material with the phosphor particles is preferably liquid at the first temperature. For example, the matrix material with the

Phosphor particles in the first flowable state have a viscosity of 0.01 N * s / m2 up to and including

1000 N * s / m2. In particular, the matrix material with the phosphor particles in the first flowable state has a viscosity of 1 N * s / m2 up to and including 4 N * s / m2.

According to at least one embodiment of the method, the matrix material with the phosphor particles is heated in a cavity up to the first temperature. The cavity can be a container in which the matrix material with the

Fluorescent particles is mixed, or into which the matrix material mixed with the fluorescent particles is introduced. The container is preferably designed to be heated to the first temperature and to keep it essentially constant over several hours or days.

Furthermore, the container is preferably designed to transmit the heat generated to the matrix material

To give off phosphor particles. For example, that

Be designed to be completely closable so that the container or the cavity completely encloses the matrix material with the phosphor particles.

It is also possible for the container to have an open passage. In this case, the matrix material with the phosphor particles can be mixed with a solvent

are mixed and placed in the container. The Solvent has, for example

Evaporation temperature that is less than the first

Temperature is. Examples of suitable solvents are alkanes, in particular n-heptane, and alcohols, such as ethanol, n-butanol, isopropanol and methanol.

The matrix material with the phosphor particles, which is mixed with the solvent, can be heated to a further first temperature in the container. The further first temperature, which is higher than the evaporation temperature of the solvent, is preferably lower than the first

Temperature. The solvent can pass through the passage

evaporate. If the solvent has essentially completely evaporated, an inner wall of the container is preferably covered with a thin layer of the matrix material

Fluorescent particles covered.

In accordance with at least one embodiment of the method, the matrix material with the phosphor particles is at the first temperature via an opening in the cavity in the form of

Drops deposited. The drop shape of the matrix material with the phosphor particles results from a

Interfacial tension between the matrix material with the phosphor particles and the cavity in the area of the opening. The matrix material preferably has the

Fluorescent particles only in the form of drops

Passing through the opening. The matrix material is particularly preferably located with the

Fluorescent particles that pass through the opening in drop form after the passage in a free fall and are particularly preferably completely surrounded by air. Due to a surface tension, the matrix material with the phosphor particles has a round shape in free fall. Alternatively, it is possible for the matrix material with the phosphor particles, which covers the inner wall of the container, to be heated in the container to the first temperature and to pass into the first flowable state.

For example, the container has a depression. The flowable matrix material with the phosphor particles flows into the depression of the container due to gravity.

According to at least one embodiment of the method, the drops cool after the separation and change to the first solid state. The drops preferably cool in free fall to the second temperature. This means that the matrix material with the phosphor particles changes from the first flowable state into the first solid state.

Alternatively, it is possible that the matrix material with the phosphor particles, which has flowed into the minimum of the container, is cooled to the second temperature and changes to the first solid state. The matrix material with the phosphor particles can subsequently be released from the container and form a conversion element.

In accordance with at least one embodiment of the method, the matrix material with the phosphor particles reversibly changes from the first flowable state to the first solid state. That means that the matrix material with the

Fluorescent particles can transition from the first flowable state to the first solid state and subsequently from the first solid state back to the first flowable state

State can pass without the matrix material with the phosphor particles in each case in the first flowable state or structural remaining in the first solid state

Undergoes changes.

Furthermore, a method for producing a

optoelectronic component specified.

According to at least one embodiment of the method, a semiconductor chip is provided which has a multiplicity of

Emission ranges includes and electromagnetic

Primary radiation from a radiation exit surface

sending out. The emission areas send each

electromagnetic primary radiation from one

Radiation exit area. The radiation-emitting semiconductor chip is preferably a

pixelated light-emitting diode chip, in which the emission areas form pixels that are, for example, independent of one another

are operable. A multiplicity of emission regions is preferably each part of a cover surface of the

Semiconductor chips formed. The multitude of

Radiation exit areas of the emission regions preferably form a radiation exit area of the semiconductor chip.

The emission regions can preferably be operated individually and separately from one another. The emission regions by means of separating structures are particularly preferred

Cut. The separation structures can

Radiation exit areas of the emission areas

or protrude radiation exit surface of the semiconductor chip. The separating structures can each enclose the emission areas in a frame-like manner and can each form

Recording of at least one conversion element can be formed. Furthermore, the separating structures are designed to suppress or prevent crosstalk of generated primary radiation from one emission area into directly adjacent emission areas.

The emission areas can, for example, be arranged in a matrix, that is, along columns and rows.

The recesses are preferably arranged at grid points of a regular pattern.

According to at least one embodiment of the method, at least one conversion element is placed on at least one

Emission range of the semiconductor chip applied. The at least one conversion element is preferably the conversion element that can be produced using the previously described method. This means that all of the features and embodiments disclosed in connection with the previously described method for producing a large number of conversion elements can also be used in connection with the at least one conversion element described here and vice versa.

According to at least one embodiment of the method, the at least one conversion element is heated to a third temperature. The third temperature is preferably between 150 ° C and 250 ° C inclusive, in particular between 160 ° C and 200 ° C inclusive.

According to at least one embodiment of the method, the at least one conversion element is cooled to the second temperature.

According to at least one embodiment of the method, the third temperature is higher than the first temperature. According to at least one embodiment of the method, the at least one conversion element is in a second solid state after cooling and forms at least one conversion segment. The at least one conversion element or the at least one conversion segment in the second solid state has an aggregate state that is fixed. Furthermore, the second solid state may be a second solid phase that is different from the first solid phase. That is, a microscopic structure of the first solid state differs from a microscopic structure of the second solid state.

The at least one conversion element is preferably present

or the at least one conversion segment in direct contact with the at least one emission area. This is particularly preferred at least one

After cooling, the conversion segment is firmly connected to the at least one emission region.

According to at least one embodiment of the method, the at least one conversion element is by means of a

Mask structure applied to the at least one emission region of the semiconductor chip.

Mask structure applied to a temporary support. A top surface of the temporary carrier preferably forms

Adhesive forces from room temperature. At least one

Conversion element can then be placed on the temporary support by means of the mask structure, the adhesive Forces a conversion element attached to the temporary support.

According to at least one embodiment of the method, the at least one conversion element is placed on the at least one emission region of the

Semiconductor chips applied. For example, the

Temporary carriers are heated, which reduces the adhesive forces. Because of the reduced adhesive force, the at least one conversion element is easily removed

temporary carrier removable.

Since the at least one conversion element has a round shape when applied to the at least one emission region

has, whose greatest lateral extent is preferably smaller than the greatest lateral extent of the at least one emission region, covers the at least one

Conversion element preferably not completely the at least one emission area.

In accordance with at least one embodiment of the method, the mask structure comprises a mask and an aperture. The mask preferably comprises a plate which has at least one opening which is assigned to the at least one emission region on which the at least one conversion element is to be arranged.

It is also possible that a large number of

Conversion elements are arranged on the plurality of emission areas. In this case, the mask comprises a plate with a large number of recesses. The recesses can be assigned to the multiplicity of emission regions on which the multiplicity of conversion elements is to be arranged. The recesses can, for example, be arranged in a matrix, that is, along columns and rows. The recesses are preferably arranged at grid points of a regular pattern. Furthermore, the recesses are preferably laterally spaced apart from one another.

The diaphragm preferably closes the opening of the mask. The aperture can be applied when the at least one

Conversion element on the at least one emission area are removed so that the at least one

Conversion element via the at least one opening of the mask onto the at least one emission area or onto the

temporary carrier can be applied. The passage of the at least one is particularly preferred

Conversion element induced by the at least one opening by shaking the mask structure.

In accordance with at least one embodiment of the method, the matrix material with the phosphor particles is in a second flowable state at the third temperature. An aggregate state of the matrix material with the phosphor particles is preferably liquid at the third temperature. For example, the matrix material with the

Fluorescent particles in the second flowable state

Viscosity from 0.01 N * s / m2 up to and including 1000 N * s / m2. In particular, the matrix material with the phosphor particles in the first flowable state has a viscosity of 1 N * s / m2 up to and including 4 N * s / m2.

Furthermore, the at least one conversion element after the heating and the subsequent cooling or the at least one conversion element essentially has one plan the top surface facing away from the semiconductor chip. This means that the at least one conversion element is heated to the third temperature and goes into the second

flowable state over. The round shape of the

Conversion element is melted and that

Matrix material with the phosphor particles settles

preferably completely over the at least one

Emission area. Furthermore, the matrix material with the phosphor particles in the second flowable state has an essentially constant thickness. This means that the top surface is flat and parallel to a top surface of the at least one emission region.

In accordance with at least one embodiment of the method, the second solid state does not change to a flowable state at the first and third temperatures and remains in the second solid state. That is, the transition from the second flowable state to the second solid state is not a reversible process. The shape of the matrix material with the phosphor particles preferably does not change during cooling. That is, at least one

Conversion element has a top surface that is flat and parallel to a top surface of the at least one

Emission range is formed.

It is also possible for the separating structures to be removed by means of a removal process, for example by grinding, so that the separating structures are flush with the cooled conversion element or the

Complete conversion segment. It is also possible that the conversion segment is also planarized by the removal process. In accordance with at least one embodiment, the method comprises applying at least one further conversion element. The at least one further conversion element is preferably the conversion element that can be produced using the previously described method. This means that all of the features and embodiments disclosed in connection with the previously described method for producing a large number of conversion elements are also shown in

Connection with at least one described here

further conversion element applicable and vice versa.

In accordance with at least one embodiment of the method, the at least one further conversion element is designed to convert part of the primary radiation into secondary radiation, which is different from the secondary radiation of the at least one conversion element. That is, it converts at least one conversion element

electromagnetic primary radiation of the semiconductor chip at least partially in secondary radiation of a first one

Wavelength range and at least one more

Conversion element converts the primary radiation of the

Semiconductor chips at least partially in the secondary radiation of a second wavelength range.

As described for the optoelectronic component, the at least one further conversion element can also be applied to the at least one further emission region or the temporary carrier by means of the mask structure or a further mask structure. At least one more

Conversion element lies on the after application

at least one further emission range, heating to the third temperature and cooling to the second temperature, likewise in a second solid state and forms at least one further conversion segment.

The method described here for producing an optoelectronic component makes use, inter alia, of the idea that the conversion elements can be placed particularly close to one another by the method described above. Furthermore, it is advantageously possible that the methods described above can be separated in terms of time and space, as a result of which the process chain can be simplified. Furthermore, by applying the

Conversion particles to an assigned emission area and subsequent melting the size of the

Fluorescent particles are advantageously chosen to be comparatively large.

In addition, a conversion element is specified which can be produced using the method described here for producing a large number of conversion elements. All disclosed in connection with the process

Features and embodiments can therefore also be used in connection with the conversion element and vice versa.

According to at least one embodiment, this comprises

Conversion element is a matrix material that is transparent to primary radiation.

According to at least one embodiment, this comprises

Conversion element fluorescent particles contained in the

Matrix material are introduced and are designed to convert part of the primary radiation into secondary radiation. According to at least one embodiment, this

Conversion element has a round shape.

According to at least one embodiment, this

Conversion element on a largest lateral extension between 90 ym and 125 ym.

According to at least one embodiment, this comprises

Matrix material of the conversion element is a siloxane. The siloxane preferably comprises silanes. The physical

Material properties, preferably viscosity, ductility and deformability, depend on the spatial arrangement / three-dimensional structure of the siloxanes. The siloxane can preferably be designed as a dimer, tetramer, ladder-shaped or as a polymer which has a cage.

According to at least one embodiment, a monomer of the siloxane is formed by silanes which are different

Have substituents such as methyl and phenyl groups with ethoxy and methoxy groups. At least two silanes with different substituents are preferably linked to one another and form a siloxane. A monomer of the silanes particularly preferably has substituents on one

Silicon atom. For example, the silanes include methyl and phenyl groups with methoxy and ethoxy groups. The monomer silane can particularly preferably be methyl and

include phenyl substituted groups with methoxy groups.

For example, the monomer includes the compounds

Dimethyldimethoxysilane, methyltrimethoxysilane,

Tetramethoxysilane, phenyltrimethoxysilane and

Diphenyldimethoxysilane. The monomer can particularly preferably comprise methyl- and phenyl-substituted groups with ethoxy groups. For example, the preliminary stage includes the Compounds dimethyldiethoxysilane, methyltriethoxysilane, tetraethoxysilane, phenyltriethoxysilane and

Diphenyldiethoxysilane.

The matrix material particularly preferably comprises or is one or more of the following siloxanes: C ^^ C ^ Si,

C4H12O3SZ, C4H22O4SZ, C9H24O3SZ, C _] _4H25O2Si, CgH ^ gC ^ Si, ^c 7 ^H 18 ° 3 ^si ' ^c 8 ^H 20 ° 4 ^si ' C ₁₂ H ₂ o03 ^si ' ^c 16 ^H 20 ° 2 ^si

Furthermore, an optoelectronic component is specified which can be produced using the method described here for producing an optoelectronic component. All disclosed in connection with the process

Features and embodiments can therefore also be used in connection with the optoelectronic component and vice versa.

According to at least one embodiment, this comprises

optoelectronic component, a semiconductor chip which comprises a large number of emission regions and

electromagnetic primary radiation from one

Emits radiation exit surface.

According to at least one embodiment, this comprises

optoelectronic component at least one conversion segment, which is formed with the conversion element described above. This means that all of the features and embodiments disclosed in connection with the conversion element described above can also be used in connection with the conversion segment described here and vice versa.

In accordance with at least one embodiment, the at least one conversion segment is arranged on at least one emission region. In accordance with at least one embodiment, the optoelectronic component comprises at least one further one

Conversion segment that is formed with a conversion element as described above.

In accordance with at least one embodiment, the at least one further conversion segment is arranged on at least one further emission region of the semiconductor chip.

In accordance with at least one embodiment, the at least one further conversion segment is designed to convert part of the primary radiation into secondary radiation which is from the secondary radiation of the at least one

Conversion segment is different.

The following describes the method described here for producing a large number of conversion elements, the method for producing an optoelectronic component and the conversion element and the optoelectronic component

Component explained in more detail using exemplary embodiments and the associated figures.

Show it:

Figure 1 is a schematic sectional view of a

Process stage in the production of a large number of conversion elements according to one exemplary embodiment,

FIGS. 2A, 2B, 2C and 2D are schematic sectional representations of process stages in the production of a large number of conversion elements according to one exemplary embodiment, FIGS. 3A, 3B, 3C and 3D show schematic sectional representations of process stages in the production of a

optoelectronic component according to one exemplary embodiment,

Figures 4A, 4B, 4C, 4D, 4E and 4F are schematic

Sectional representations of process stages at

Production of an optoelectronic component according to an embodiment

FIG. 5A shows a schematic sectional illustration of a mask for producing an optoelectronic component in accordance with an exemplary embodiment, and

Figure 5B schematic sectional view of a

optoelectronic component according to an embodiment.

Identical, similar or identically acting elements are provided with the same reference symbols in the figures. The figures and the proportions of the elements shown in the figures among themselves are not as

to look at scale. Rather, individual elements can be better represented and / or better

Understandability is exaggerated.

In the method step in accordance with the exemplary embodiment in FIG. 1, there is a matrix material 2 which is made with

Fluorescent particles 3 is introduced into a cavity 4. The matrix material 2 with the

Phosphor particles 3 is subsequently placed on a first one

Temperature TI heated. At the first temperature TI, the matrix material 2 with the phosphor particles 3 is in a first flowable state. Furthermore, the cavity 4 has an opening 5. The matrix material 2 with the phosphor particles 3 is deposited in the form of drops 6 via the opening 5 in the cavity 4.

The drop shape of the matrix material 2 with the

Fluorescent particles 3 results from a

Interfacial tension between the matrix material 2 with the phosphor particles 3 and the cavity 4 in the area of the

Opening 5.

The matrix material 2 with the phosphor particles 3 has the drop shape only when it passes through the opening 5. After the deposition, the matrix material 2 with the phosphor particles 3 is in free fall. Due to the surface tension, the matrix material 2 with the

Fluorescent particles 3 have a round shape in free fall.

The drops 4 cool in free fall to the second temperature T2 and the matrix material 2 with the phosphor particles 3 changes from the first flowable state into a first solid state. The cooled matrix material 2 with the phosphor particles 3 each forms a conversion element 1.

2A, 2B, 2C and 2D are schematic

Sectional representations of process stages at

Manufacture of a plurality of conversion elements shown according to an embodiment.

In the method according to the exemplary embodiment in FIGS. 2A and 2B, this is carried out in a first method step

Matrix material 2 mixed with the phosphor particles 3 with a solvent 7 and introduced into the cavity 4 and brought to a further first temperature T4 of the solvent 7 heated. The further first temperature T4 is preferably designed to be lower than the first temperature TI.

According to the exemplary embodiment in FIG. 2B, the

Solvent 7 evaporates and is discharged through a passage 8. The solvent 7 evaporates essentially completely, so that an inner wall 9 of the cavity with a thin layer of the matrix material 2 with the

Fluorescent particles 3 is covered.

In a further step, the matrix material 2 with the phosphor particles 3, as shown in FIG. 2C, is heated in the cavity 4 to the first temperature TI and changes to the first flowable state. The flowable matrix material 2 flows with the force of gravity

Fluorescent particles 3 in a minimum of the cavity 4 together.

In a subsequent step, the matrix material 2 with the phosphor particles 3 is cooled to the second temperature T2 and forms a conversion element 4 (not

shown).

As shown schematically in Figure 2D, the

Conversion elements la each triggered from the cavity 4 and form the plurality of conversion elements.

3A, 3B, 3C and 3D are schematic

Sectional representations of process stages at

Manufacture of an optoelectronic component shown according to an embodiment. In the method according to the exemplary embodiment in FIGS. 3A and 3B, a large number of conversion elements 1 a and a semiconductor chip 10 are provided, which comprise a large number of emission regions 11 and electromagnetic ones

Emits primary radiation from a radiation exit surface 12. The emission areas 11 are by means of

Separation structures 21 separated from each other. Furthermore, the separating structures 21 protrude beyond the radiation exit area of the semiconductor chip 12.

The multiplicity of conversion elements 1 a is respectively assigned to one by means of a mask structure 13

Emission region 11 of the semiconductor chip 10 is applied. The mask structure 13 comprises a mask 14 and an aperture 15. The openings of the mask 14 can each

Emission regions 11 can be assigned to the one

Conversion element la is to be arranged. 3B closes the opening of the mask 14.

In a further step, the aperture 15 is applied to the respective ones when the conversion elements 1 a are applied

Emission areas 11 removed so that the

Conversion elements la are applied to the respective emission regions 11 via the respective openings of the mask 14, as shown in FIG. 3C. A step through the

Conversion elements la through the respective openings of the mask 14 are preferably induced by shaking the mask structure 13.

In a further step, the conversion elements 1, as shown in FIG. 2D, are heated to a third temperature T3, so that the matrix material 2 with the

Fluorescent particles 3 of the conversion elements la in the third temperature T3 are in a second flowable state.

The conversion elements la are heated to the third temperature T3 and change to the second flowable state. The round shape of the conversion element la is

melted and the matrix material 2 with the

Phosphor particles 3 preferably lie completely over the assigned emission regions 11. Furthermore, the matrix material 2 with the phosphor particles 3 in the second flowable state has an essentially constant thickness. This means that the top surface 16 is flat and parallel to a top surface of the emission regions 11 or to the radiation exit surface 12.

Subsequently, the matrix material 2 with the

The phosphor particles 3 have cooled down again to the second temperature T2 and form conversion segments 1b. The shape of the matrix material 2 with the phosphor particles 3 does not change when it cools down.

FIGS. 4A, 4B, 4C, 4D, 4E and 4F are schematic sectional representations of process stages in the

Manufacture of an optoelectronic component shown according to an embodiment.

In contrast to the exemplary embodiment according to FIGS. 3A, 3B and 3C, the method according to the exemplary embodiment according to FIGS. 4A and 4B shows the conversion elements 1 a being applied to a temporary carrier 17 by means of the mask structure 13. In a further step, as shown in FIGS. 4C and 4D, further conversion elements 18 are applied to the temporary carrier 17 by means of the mask structure 13 or a further mask structure 19.

In a further step, the conversion elements 1 a and the further conversion elements 18, as shown in FIG. 4E, are applied to the assigned emission regions 11 of the semiconductor chip 10 by means of the temporary carrier 17.

Analogous to the method step shown in FIG. 3D

is shown, according to FIG. 4F

Conversion elements la and the further conversion elements 18a are heated to the third temperature T3, so that they each pass into the second flowable state. After cooling to the first temperature TI, that is

Matrix material 2 and the phosphor particles 3 in the second solid state and each form conversion segments 1b,

18b.

According to FIG. 5A, a schematic sectional illustration in plan view of a mask 14 for producing a

Optoelectronic component shown according to an embodiment.

The mask 14 has a multiplicity of recesses 20 through which the conversion elements 1 a and / or the further conversion elements 18 a are applied to the associated emission regions 11 or to the temporary carrier 17. The recesses 20 are matrix-like, that is, along

Arranged columns and rows. The recesses 20 are arranged at a distance from one another. As shown in FIG. 5B, the conversion elements 1a and the further conversion elements 18a are arranged above the respective emission regions 11 by means of the mask according to FIG. 5A, heated to the third temperature T3 and cooled to the second temperature T2.

The conversion segments lb and the others

Conversion segments 18b are then each configured to convert the primary radiation generated by the emission regions 11 into warm white and cold white light.

The present application claims the priority of the German application DE 102018118823.4, the

Disclosure content is hereby incorporated by reference.

The invention is not restricted to the exemplary embodiments by the description based on these. Rather, the invention encompasses every new feature and every combination of features, which includes in particular every combination of features in the claims, even if this feature or this combination itself is not explicitly described in the figures

Claims or exemplary embodiments is specified.

List of reference symbols la conversion element

lb conversion segment

2 matrix material

3 fluorescent particles

4 cavity

5 opening

6 drops

7 solvents

8 passage

9 inner wall

10 semiconductor chip

11 Emission range

12 radiation exit surface

13 mask structure

14 mask

15 aperture

16 deck area

17 temporary bearers

18a further conversion element

18b further conversion element

19 more mask structures

20 recesses

21 separation structures

TI first temperature

T2 second temperature

T3 third temperature

T4 another first temperature

Claims

claims

1. Process for producing a variety of

Conversion elements (la) with the steps

- Providing a matrix material (2) that is transparent to primary radiation,

- Introducing phosphor particles (3) in the

Matrix material (2), which are designed to convert part of the primary radiation into secondary radiation,

- Heating the matrix material (2) to a first temperature (TI), and

- Cooling the matrix material (2) with the

Phosphor particles (3) to a second temperature (T2), wherein

- When cooling, the plurality of conversion elements (la) is generated in a first solid state, and

- The conversion elements (la) each have a greatest lateral extent between 90 ym and 125 ym.

2. The method according to the preceding claim,

wherein the matrix material (2) with the phosphor particles (3) is in a first flowable state at the first temperature (TI).

3. The method according to any one of the preceding claims,

wherein the matrix material (2) with the phosphor particles (3) is heated in a cavity (4) up to the first temperature (TI).

4. The method according to the preceding claim 3,

wherein the matrix material (2) with the phosphor particles (3) is deposited at the second temperature (T2) via an opening (5) in the cavity (4) in the form of drops (6).

5. The method according to the preceding claim 4,

the drops (6) each cool after separation and change to the first solid state.

6. The method according to any one of the preceding claims 2 to 5, wherein the matrix material (2) with the phosphor particles (3) reversibly changes from the first flowable state to the first solid state.

7. Process for producing an optoelectronic

Component with the steps:

Providing a semiconductor chip (10) which comprises a plurality of emission regions (11) and emits primary electromagnetic radiation from a radiation exit surface (12),

- Applying at least one conversion element (la) according to one of claims 1 to 6 to at least one

Emission range of the semiconductor chip,

- Heating the at least one conversion element (la) to a third temperature (T3), and

- Cooling the at least one conversion element (la) to the second temperature (T2), wherein

- The third temperature (T3) is greater than the first temperature (TI), and

- The at least one conversion element (la) after

Cooling is in a second solid state and

forms at least one conversion segment (lb).

8. The method according to the preceding claim 7,

wherein the at least one conversion element (la) on the at least one by means of a mask structure (13) Emission area (11) of the semiconductor chip (10) is applied.

9. The method according to the preceding claim 7,

wherein the at least one conversion element (la) is applied to a temporary carrier (17) by means of a mask structure (13).

10. The method according to the preceding claim 9,

wherein the at least one conversion element (la) by means of the temporary carrier (17) on the at least one

Emission area (11) of the semiconductor chip (10) is applied.

11. The method according to any one of the preceding claims 8 to 10, wherein the mask structure (13) comprises a mask (14) and an aperture (15).

12. The method according to any one of the preceding claims 7 to 11, wherein the matrix material (2) with the phosphor particles (3) at the third temperature (T3) is in a second flowable state.

13. The method according to any one of the preceding claims 7 to 12, wherein the second solid state at the first and third temperature (TI, T3) does not change into a flowable state and remains in the second solid state.

14. The method according to any one of the preceding claims 7 to 13, wherein

- At least one further conversion element (18a) according to one of claims 1 to 6 to at least one other Emission area (11) of the semiconductor chip (10) is applied, and

- The at least one further conversion element (18a) is designed to convert a part of the primary radiation into a secondary radiation, which of the

Secondary radiation of the at least one conversion element (la) is different.

15. Conversion element with:

- A matrix material (2) that is permeable to a

Primary radiation is formed, and

- Fluorescent particles (3) which are introduced into the matrix material (2) and are designed to form part of the

Convert primary radiation into secondary radiation, whereby

- The conversion element (la, 18a) has a round shape, and

- The conversion element (la, 18a) a largest lateral

Extends between 90 ym and 125 ym.

16. Conversion element according to the preceding claim 15, wherein the matrix material comprises a siloxane.

17. Conversion element according to the preceding claim 16, wherein a monomer of the siloxane is formed by silanes which have different substituents, such as methyl and

Phenyl groups with ethoxy and methoxy groups can have.

18. Optoelectronic component with:

- A semiconductor chip (10) which a variety of

Emission ranges (11) includes and electromagnetic Primary radiation from a radiation exit surface

sends out, and

- At least one conversion segment (lb) that with the

Conversion element (la) is formed according to any one of the preceding claims 15 to 17, wherein

- The at least one conversion segment (lb) is arranged on at least one emission area (11).

19. Optoelectronic component according to the preceding claim 18, with

- At least one further conversion segment (18b) with the conversion element (18a) according to one of the previous ones

Claims 15 to 17 is formed, wherein

- The at least one further conversion segment (18b) on at least one further emission area (11) of the

Semiconductor chips (10) is arranged, and

- That at least one further conversion segment (18b) is designed to convert a part of the primary radiation into a secondary radiation, which of the

Secondary radiation of the at least one conversion segment (lb) is different.