WO2020015132A1 - Method for automatically determining data rate of tested flash memory - Google Patents
Method for automatically determining data rate of tested flash memory Download PDFInfo
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- WO2020015132A1 WO2020015132A1 PCT/CN2018/105891 CN2018105891W WO2020015132A1 WO 2020015132 A1 WO2020015132 A1 WO 2020015132A1 CN 2018105891 W CN2018105891 W CN 2018105891W WO 2020015132 A1 WO2020015132 A1 WO 2020015132A1
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/349—Arrangements for evaluating degradation, retention or wearout, e.g. by counting erase cycles
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
- G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
- G11C29/1201—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details comprising I/O circuitry
Definitions
- the invention relates to the technical field of flash memory, and in particular to a method for automatically judging a test flash data rate.
- Flash memory is a kind of long-life non-volatile (can retain the stored data information in the event of a power failure). Data is not deleted in single bytes but in fixed blocks. The block size is generally 256KB to 20MB. Flash memory is a variant of electronically erasable read-only memory. Unlike flash memory, EEPROM can delete and rewrite at the byte level instead of erasing the entire chip. Most chips of flash memory require block erasure. Because it can still save data when power is off, flash memory is usually used to save setting information, such as the computer's BIOS (basic program), PDA (personal digital assistant), digital camera, etc .; block) in the storage unit.
- BIOS basic program
- PDA personal digital assistant
- digital camera etc .
- Flash memory is a variant of electrically erasable and programmable read-only memory (EEPROM).
- EEPROM electrically erasable and programmable read-only memory
- Flash memory is different from flash memory in that it deletes and rewrites at the byte level, so that the EEPROM is slower than the flash memory to update.
- Flash memory is often used to store control codes, such as the basic input-output system (BIOS) in personal computers. When the input / output system needs to be changed (rewritten), the flash memory can be written and written in blocks (instead of bytes), so that the flash memory can be updated more easily.
- BIOS basic input-output system
- flash memory is not as useful as random access memory (RAM), because random access memory can set addresses at the byte (not block) level; the name flash is because microchips are organized to make storage Part of the unit can be deleted in an instant (or lightning). This deletion is performed by a tunneling effect, in which electrons pierce a thin layer of insulating material to move charges from the floating gate of each memory cell.
- Intel provides a form of flash memory, which stores 2 bits (instead of 1 bit) in each storage unit, which can double the storage capacity without increasing the corresponding price; flash memory is used in digital mobile phones, digital cameras, and local area networks Switches, laptop PC cards, embedded controllers, etc.
- Flash memory is a non-disappearing memory device, consisting of blocks, each block is divided into multiple pages, each page will be composed of multiple columns, and the flash particle read and write data rate interface is divided into single data rate and dual Data rate.
- each data rate setting can be selected for testing. Therefore, if the test result is not satisfactory, it is necessary to switch to another data rate setting for testing to determine whether the particles are completely unusable. This often takes extra time and cost.
- An object of the present invention is to provide a method for automatically determining a data rate of a test flash memory, so as to solve the problems in the above background technology.
- a method for automatically determining a data rate of a test flash memory includes a control chip, a flash memory, and a software program module, and the control chip is respectively connected to the flash memory and the software program module.
- a temporary register is provided in the flash memory.
- the flash memory has 1024 blocks, each block has 256 pages, and each page has 32 sectors.
- a method for automatically judging a test flash data rate includes the following steps:
- step C Confirm whether the read-write comparison result is good. If it is good, go to step D; if not, go to step E;
- Flash memory settings maintain dual data rate mode
- the flash memory setting is changed to single data rate mode.
- the present invention has the following beneficial effects:
- the flash memory is set to a dual data rate mode, and then a register read / write signal test of different gears is performed to confirm whether the read / write comparison result is good. If it is good, the dual data rate mode is maintained. If it is not good, the single data rate mode is switched.
- the read and write comparison classification test can be directly performed.
- the principle of the present invention is simple, and the read and write comparison can be performed at an appropriate data rate in one stop. Classified testing improves efficiency.
- FIG. 1 is a schematic block diagram of the present invention
- FIG. 2 is a flowchart of the present invention.
- the present invention provides a technical solution: a method for automatically determining a data rate of a test flash memory, which includes a control chip 1, a flash memory 2, and a software program module 3.
- the control chip 1 is respectively connected to the flash memory 2 and the flash memory.
- a software program module 3; a flash memory 4 is provided in the flash memory 2.
- the flash memory 2 has 1024 blocks, each block has 256 pages, and each page has 32 sectors.
- a method for automatically judging a test flash data rate includes the following steps:
- step C Confirm whether the read-write comparison result is good. If it is good, go to step D; if not, go to step E;
- Flash memory settings maintain dual data rate mode
- the flash memory setting is changed to single data rate mode.
- the flash memory is set to the dual data rate mode, and then the register read and write signal tests of different gears are performed to confirm whether the read and write comparison results are good. If the read and write comparison results are good, the dual data rate mode is maintained, and if not, the switch In the single data rate mode, the read-write comparison and classification test can be directly performed at the end.
- the principle of the present invention is simple, and the read-write comparison and classification test can be performed at an appropriate data rate in one stop, which improves the efficiency.
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- Read Only Memory (AREA)
- For Increasing The Reliability Of Semiconductor Memories (AREA)
- Techniques For Improving Reliability Of Storages (AREA)
Abstract
Disclosed in the present invention is a method for automatically determining the data rate of tested flash memory, comprising a control chip, flash memory and a software program module, and comprising: the control chip being is signal connection with the flash memory and the software program module respectively; setting the flash memory to a double data rate mode, then performing register read and write signal testing for different gear positions; confirming whether a read and write comparison result is good; if the result is good, then maintaining the double data rate mode; and if the result is not good, switching to a single data rate mode; finally, read and write comparison classification testing may be directly performed. The principle of the present invention is simple, and read and write comparison classification testing may be performed at a suitable data rate in a one-stop manner, thereby improving efficiency.
Description
本发明涉及闪存技术领域，具体为一种自动判断测试闪存数据速率的方法。The invention relates to the technical field of flash memory, and in particular to a method for automatically judging a test flash data rate.
闪存是一种长寿命的非易失性(在断电情况下仍能保持所存储的数据信息)的存储器，数据删除不是以单个的字节为单位而是以固定的区块为单位，区块大小一般为256KB到20MB。闪存是电子可擦除只读存储器的变种，闪存与EEPROM不同的是，EEPROM能在字节水平上进行删除和重写而不是整个芯片擦写，而闪存的大部分芯片需要块擦除。由于其断电时仍能保存数据，闪存通常被用来保存设置信息，如在电脑的BIOS(基本程序)、PDA(个人数字助理)、数码相机中保存资料等；它能在称为块(block)的存储单位中进行删除和改编。闪存是电可擦写可编程只读存储器(EEPROM)的变体，EEPROM与闪存不同的是，它在字节层面上进行删除和重写，这样EEPROM就比闪存的更新速度慢。通常用闪存来保存控制代码，比如在个人电脑中的基本输入输出系统(BIOS)。当需要改变(重写)输入输出系统时，闪存可以以块(而不是字节)的大小输写，这样闪存就更容易更新。但另一方面，闪存不像随机存取存储器(RAM)一样有用，因为随即存取存储器可以在字节(而不是块)层面上设定地址；闪存这个名字是因为微芯片被组织来使存储单元的一部分能在一瞬间(或闪电般的)被删除得出的。这种删除是通过隧道效应进行的，在隧道效应中电子刺破薄薄的一层绝缘材料来从每个存储单元的浮栅中移动电荷。Intel提供了一种形式的闪存，它在每个存储单元保存2比特(而不是1比特)，这样能够使存储量翻倍而无需增加相应的价格；闪存被用于数码手机、数码照相机、局域网交换机、笔记本电脑的PC卡、嵌入式控制器等设备中Flash memory is a kind of long-life non-volatile (can retain the stored data information in the event of a power failure). Data is not deleted in single bytes but in fixed blocks. The block size is generally 256KB to 20MB. Flash memory is a variant of electronically erasable read-only memory. Unlike flash memory, EEPROM can delete and rewrite at the byte level instead of erasing the entire chip. Most chips of flash memory require block erasure. Because it can still save data when power is off, flash memory is usually used to save setting information, such as the computer's BIOS (basic program), PDA (personal digital assistant), digital camera, etc .; block) in the storage unit. Flash memory is a variant of electrically erasable and programmable read-only memory (EEPROM). EEPROM is different from flash memory in that it deletes and rewrites at the byte level, so that the EEPROM is slower than the flash memory to update. Flash memory is often used to store control codes, such as the basic input-output system (BIOS) in personal computers. When the input / output system needs to be changed (rewritten), the flash memory can be written and written in blocks (instead of bytes), so that the flash memory can be updated more easily. On the other hand, flash memory is not as useful as random access memory (RAM), because random access memory can set addresses at the byte (not block) level; the name flash is because microchips are organized to make storage Part of the unit can be deleted in an instant (or lightning). This deletion is performed by a tunneling effect, in which electrons pierce a thin layer of insulating material to move charges from the floating gate of each memory cell. Intel provides a form of flash memory, which stores 2 bits (instead of 1 bit) in each storage unit, which can double the storage capacity without increasing the corresponding price; flash memory is used in digital mobile phones, digital cameras, and local area networks Switches, laptop PC cards, embedded controllers, etc.
闪存为非消失性的存储器装置，由块组成，每个块又分成多个页，每个页会有多个列组合而成，而闪存颗粒读写资料速率界面又分为单数据速率及双数据速率。一般在进行闪存分类测试的时候，只能选择一种数据速率设定去测试，因此如果测试结果不理想，多半还需要切换另一种数据速率设定去测试，来确定颗粒是否完全不能使用。这样往往需要多花时间成本。Flash memory is a non-disappearing memory device, consisting of blocks, each block is divided into multiple pages, each page will be composed of multiple columns, and the flash particle read and write data rate interface is divided into single data rate and dual Data rate. Generally, when performing a flash memory classification test, only one data rate setting can be selected for testing. Therefore, if the test result is not satisfactory, it is necessary to switch to another data rate setting for testing to determine whether the particles are completely unusable. This often takes extra time and cost.
发明内容Summary of the invention
本发明的目的在于提供一种自动判断测试闪存数据速率的方法，以解决上述背景技术中提出的问题。An object of the present invention is to provide a method for automatically determining a data rate of a test flash memory, so as to solve the problems in the above background technology.
为实现上述目的，本发明提供如下技术方案：一种自动判断测试闪存数据速率的方法，包括控制芯片、闪存和软件程序模块，所述控制芯片分别信号连接闪存和软件程序模块。To achieve the above object, the present invention provides the following technical solution: A method for automatically determining a data rate of a test flash memory includes a control chip, a flash memory, and a software program module, and the control chip is respectively connected to the flash memory and the software program module.
优选的，所述闪存内设有暂存器，所述闪存有1024个块，每个块有256个页，每个页有32个扇形组合而成。Preferably, a temporary register is provided in the flash memory. The flash memory has 1024 blocks, each block has 256 pages, and each page has 32 sectors.
优选的，一种自动判断测试闪存数据速率的方法，包括以下步骤：Preferably, a method for automatically judging a test flash data rate includes the following steps:
A、将闪存设定为双数据速率模式；A. Set the flash memory to dual data rate mode;
B、进行不同档位的暂存器读写信号测试；B. Test the read and write signals of the registers of different gears;
C、确认读写比对结果是否良好，若良好，则进入步骤D；若不好，则进入步骤E；C. Confirm whether the read-write comparison result is good. If it is good, go to step D; if not, go to step E;
D、闪存设定维持双数据速率模式；D. Flash memory settings maintain dual data rate mode;
E、闪存设定改为单数据速率模式。E. The flash memory setting is changed to single data rate mode.
与现有技术相比，本发明的有益效果是：本发明中，将闪存设定为双数据速率模式，接着进行不同档位的暂存器读写信号测试，确认读写比对结果是否良好，如果良好则维持双数据速率模式，不好则切换单数据速率模式， 最后可直接进行读写比对分类测试，本发明原理简单，可以一站式的以适当的数据速率进行读写比对分类测试，提高了效率。Compared with the prior art, the present invention has the following beneficial effects: In the present invention, the flash memory is set to a dual data rate mode, and then a register read / write signal test of different gears is performed to confirm whether the read / write comparison result is good. If it is good, the dual data rate mode is maintained. If it is not good, the single data rate mode is switched. Finally, the read and write comparison classification test can be directly performed. The principle of the present invention is simple, and the read and write comparison can be performed at an appropriate data rate in one stop. Classified testing improves efficiency.
图1为本发明原理框图；FIG. 1 is a schematic block diagram of the present invention;
图2为本发明流程图。FIG. 2 is a flowchart of the present invention.
下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。In the following, the technical solutions in the embodiments of the present invention will be clearly and completely described with reference to the drawings in the embodiments of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, but not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by a person of ordinary skill in the art without creative efforts shall fall within the protection scope of the present invention.
请参阅图1-2，本发明提供一种技术方案：一种自动判断测试闪存数据速率的方法，包括控制芯片1、闪存2和软件程序模块3，所述控制芯片1分别信号连接闪存2和软件程序模块3；闪存2内设有暂存器4，所述闪存2有1024个块，每个块有256个页，每个页有32个扇形组合而成。Please refer to FIGS. 1-2. The present invention provides a technical solution: a method for automatically determining a data rate of a test flash memory, which includes a control chip 1, a flash memory 2, and a software program module 3. The control chip 1 is respectively connected to the flash memory 2 and the flash memory. A software program module 3; a flash memory 4 is provided in the flash memory 2. The flash memory 2 has 1024 blocks, each block has 256 pages, and each page has 32 sectors.
本发明中，一种自动判断测试闪存数据速率的方法，包括以下步骤：In the present invention, a method for automatically judging a test flash data rate includes the following steps:
A、将闪存设定为双数据速率模式；A. Set the flash memory to dual data rate mode;
B、进行不同档位的暂存器读写信号测试；B. Test the read and write signals of the registers of different gears;
C、确认读写比对结果是否良好，若良好，则进入步骤D；若不好，则进入步骤E；C. Confirm whether the read-write comparison result is good. If it is good, go to step D; if not, go to step E;
D、闪存设定维持双数据速率模式；D. Flash memory settings maintain dual data rate mode;
E、闪存设定改为单数据速率模式。E. The flash memory setting is changed to single data rate mode.
本发明中，将闪存设定为双数据速率模式，接着进行不同档位的暂存器读写信号测试，确认读写比对结果是否良好，如果良好则维持双数据速率模 式，不好则切换单数据速率模式，最后可直接进行读写比对分类测试，本发明原理简单，可以一站式的以适当的数据速率进行读写比对分类测试，提高了效率。In the present invention, the flash memory is set to the dual data rate mode, and then the register read and write signal tests of different gears are performed to confirm whether the read and write comparison results are good. If the read and write comparison results are good, the dual data rate mode is maintained, and if not, the switch In the single data rate mode, the read-write comparison and classification test can be directly performed at the end. The principle of the present invention is simple, and the read-write comparison and classification test can be performed at an appropriate data rate in one stop, which improves the efficiency.
尽管已经示出和描述了本发明的实施例，对于本领域的普通技术人员而言，可以理解在不脱离本发明的原理和精神的情况下可以对这些实施例进行多种变化、修改、替换和变型，本发明的范围由所附权利要求及其等同物限定。Although the embodiments of the present invention have been shown and described, it will be understood by those skilled in the art that various changes, modifications, and replacements of these embodiments can be made without departing from the principle and spirit of the present invention. And variations, the scope of the invention is defined by the appended claims and their equivalents.
Claims (3)
- 一种自动判断测试闪存数据速率的方法，其特征在于：包括控制芯片(1)、闪存(2)和软件程序模块(3)，所述控制芯片(1)分别信号连接闪存(2)和软件程序模块(3)。A method for automatically judging and testing the data rate of a flash memory, which is characterized by comprising a control chip (1), a flash memory (2), and a software program module (3). The control chip (1) is signally connected to the flash memory (2) and software. Program module (3).
- 根据权利要求1所述的一种自动判断测试闪存数据速率的方法，其特征在于：所述闪存(2)内设有暂存器(4)，所述闪存(2)有1024个块，每个块有256个页，每个页有32个扇形组合而成。The method for automatically judging and testing the data rate of a flash memory according to claim 1, characterized in that: the flash memory (2) is provided with a temporary register (4), and the flash memory (2) has 1024 blocks, each Each block has 256 pages, and each page is composed of 32 sectors.
- 根据权利要求1所述的一种自动判断测试闪存数据速率的方法，其特征在于：包括以下步骤：The method for automatically judging a test flash data rate according to claim 1, comprising the following steps:A、将闪存设定为双数据速率模式；A. Set the flash memory to dual data rate mode;B、进行不同档位的暂存器读写信号测试；B. Test the read and write signals of the registers of different gears;C、确认读写比对结果是否良好，若良好，则进入步骤D；若不好，则进入步骤E；C. Confirm whether the read-write comparison result is good. If it is good, go to step D; if not, go to step E;D、闪存设定维持双数据速率模式；D. Flash memory settings maintain dual data rate mode;E、闪存设定改为单数据速率模式。E. The flash memory setting is changed to single data rate mode.
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| JP4309086B2 (en) * | 2001-12-20 | 2009-08-05 | 株式会社ルネサステクノロジ | Semiconductor integrated circuit device |
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| US20020042897A1 (en) * | 2000-09-29 | 2002-04-11 | Tanisys Technology Inc. | Method and system for distributed testing of electronic devices |
| CN101369463A (en) * | 2007-08-17 | 2009-02-18 | 芯邦科技（深圳）有限公司 | Flash memory detection classification method |
| CN103258571A (en) * | 2012-02-20 | 2013-08-21 | 北京兆易创新科技股份有限公司 | Serial interface flash memory and clock frequency multiplier circuit |
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