WO2019227286A1 - 电子装置及其亮度监测补偿方法 - Google Patents

电子装置及其亮度监测补偿方法 Download PDF

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Publication number
WO2019227286A1
WO2019227286A1 PCT/CN2018/088705 CN2018088705W WO2019227286A1 WO 2019227286 A1 WO2019227286 A1 WO 2019227286A1 CN 2018088705 W CN2018088705 W CN 2018088705W WO 2019227286 A1 WO2019227286 A1 WO 2019227286A1
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WIPO (PCT)
Prior art keywords
layer
electronic device
light
pixel
pixel point
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Ceased
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PCT/CN2018/088705
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English (en)
French (fr)
Inventor
林源城
苏伟盛
施文杰
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Shenzhen Royole Technologies Co Ltd
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Shenzhen Royole Technologies Co Ltd
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Priority to CN201880093889.9A priority Critical patent/CN112513966A/zh
Priority to PCT/CN2018/088705 priority patent/WO2019227286A1/zh
Publication of WO2019227286A1 publication Critical patent/WO2019227286A1/zh
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
    • G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
    • G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
    • G09G3/3208—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
    • G09G3/3225—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix
    • G09G3/3233—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix with pixel circuitry controlling the current through the light-emitting element

Definitions

  • the present application relates to the field of OLED display, and in particular, to an electronic device and a brightness monitoring compensation method thereof.
  • An embodiment of the present application discloses an electronic device and a brightness monitoring compensation method thereof to solve the foregoing problems.
  • An embodiment of the present application discloses an electronic device including a display component, a light-sensitive sensing component, and a processor.
  • the display component includes a plurality of pixels.
  • the light-sensitive sensing component is configured to sense the pixels generated by the corresponding pixels in the display component.
  • the processor determines the illumination intensity of the corresponding pixel point according to the induction signal, and when determining that the illumination intensity of the corresponding pixel point is lower than a preset threshold, the processor Point for brightness compensation.
  • the embodiment of the present application discloses a brightness monitoring compensation method, which is applied to an electronic device.
  • the brightness monitoring compensation method includes the steps of: the light-sensitive sensing component sensing the light intensity generated by a corresponding pixel point in the display component and generating a sensing signal; and determining the light intensity of the corresponding pixel point according to the sensing signal, When it is determined that the light intensity of the corresponding pixel point is lower than a preset threshold, brightness compensation is performed on the corresponding pixel point.
  • the electronic device and the brightness monitoring compensation method of the present application can sense the light intensity generated by the corresponding pixel point in the display component through the photosensitive sensor component, and when it is determined that the light intensity of the corresponding pixel point is lower than a preset threshold , Performing brightness compensation on the corresponding pixel points, so that the display component displays uniformly, and the overall display effect is better.
  • FIG. 1 is a schematic cross-sectional structure diagram of an electronic device in a first embodiment of the present application.
  • FIG. 2 is a schematic cross-sectional structure diagram of an electronic device in a second embodiment of the present application.
  • FIG. 3 is a schematic cross-sectional structure diagram of an electronic device in a third embodiment of the present application.
  • FIG. 4 is a schematic cross-sectional structure diagram of an electronic device in a fourth embodiment of the present application.
  • FIG. 5 is a schematic cross-sectional structure diagram of an electronic device in a fifth embodiment of the present application.
  • FIG. 6 is a schematic structural diagram of a photosensitive sensing unit connected to a pad region in an embodiment of the present application.
  • FIG. 7 is a schematic cross-sectional structure of a solder joint in an embodiment of the present application.
  • FIG. 8 is a schematic flowchart of a brightness monitoring compensation method applied to an electronic device according to an embodiment of the present application.
  • FIG. 1 is a schematic cross-sectional structure diagram of an electronic device 1 according to a first embodiment of the present invention.
  • the electronic device 1 is a mobile phone. It can be understood that, in other embodiments, the electronic device 1 may also be an electronic device with a display function, such as a tablet computer, an electronic reader, and a wearable electronic device, which is not limited herein.
  • the electronic device 1 is a rigid board-type non-bendable electronic device. It can be understood that, in other embodiments, the electronic device 1 may also be a flexible and bendable electronic device, or an electronic device with a folding function, etc., which is not limited herein.
  • the electronic device 1 includes a substrate layer 10, a display component 30, a photosensitive sensor component 50, and a processor 70.
  • the display component 30 is stacked on the substrate layer 10.
  • the substrate layer 10 provides support for the display assembly 30.
  • the display component 30 includes a plurality of pixels 301.
  • the photosensitive sensor component 50 is configured to sense the light intensity generated by the corresponding pixel point 301 in the display component 30 and generate a sensing signal.
  • the processor 70 determines the light intensity of the corresponding pixel point 301 according to the sensing signal. And when it is determined that the light intensity of the corresponding pixel point 301 is lower than a preset threshold, brightness compensation is performed on the corresponding pixel point 301.
  • the processor 70 can determine the light intensity of each pixel point 301 of the display component 30 through several sensing signals generated by the photosensitive sensor component 50, and the light intensity at a certain pixel point 301 is lower than a predetermined value.
  • the threshold value is set, brightness compensation is performed on the pixel point 301, so that the display brightness uniformity of several pixel points 301 of the display component 30 can be maintained, and the display effect is better.
  • the photosensitive sensor assembly 50 includes at least one photosensitive sensor unit 51.
  • Each pixel point 301 is correspondingly provided with at least one photosensitive sensing unit 51, and the at least one photosensitive sensing unit 51 is configured to sense the light intensity generated by the corresponding pixel point 301 in the display component 30 and generate a sensing signal.
  • the processor 70 determines the light intensity of the corresponding pixel point 301 according to the sensing signal, and when it is determined that the light intensity of the corresponding pixel point 301 is lower than a preset threshold, performs brightness compensation on the corresponding pixel point 301 Therefore, the display brightness of the plurality of pixels 301 of the display component 30 is kept uniform as a whole.
  • the processor 70 can determine the light intensity of each pixel point 301 of the display component 30 through several sensing signals generated by the at least one photosensitive sensor unit 51, and the light intensity of a certain pixel point 301 is low.
  • the threshold value is preset, brightness compensation is performed on the pixel point 301, so that the display brightness uniformity of several pixel points 301 of the display component 30 can be maintained, and the display effect is better.
  • the photosensitive sensor unit 51 can absorb light of different wavelengths.
  • the electrons in the valence band of the photosensitive sensor unit 51 can jump to the conduction band after absorbing the energy of a photon.
  • a positively-charged hole is generated in the electron, and the electron-hole generated by the light increases the number of carriers in the semiconductor material, making the resistivity smaller, thereby causing the resistance value to decrease.
  • the processor 70 can determine the light intensity according to the change in current.
  • the display device 30 includes an anode layer 31, a light emitting layer 32, a cathode layer 33, a hole injection layer 34, a hole transport layer 35, an electron injection layer 36, and an electron transport layer 37.
  • the anode layer 31 is stacked on the substrate layer 10.
  • the hole injection layer 34 is stacked on the anode layer 31 away from the substrate layer 10.
  • the hole-transporting layer 35 is stacked on the hole-injecting layer 34 on a side remote from the anode layer 31.
  • the light emitting layer 32 is stacked and disposed on a side of the hole transport layer 35 away from the hole injection layer 34.
  • the electron transporting layer 37 is stacked and disposed on a side of the light emitting layer 32 remote from the hole transporting layer 35.
  • the electron injection layer 36 is stacked and disposed on a side of the electron transport layer 37 remote from the light emitting layer 32.
  • the cathode layer 33 is stacked on the electron injection layer 36 on a side remote from the electron transport layer 37.
  • the at least one photosensitive sensing unit 51 may be disposed in any one of the anode layer 31, the light emitting layer 32, and the cathode layer 33, and each pixel 301 corresponds to at least one of the Photosensitive sensing unit 51.
  • the at least one photosensitive sensor unit 51 is disposed in the anode layer 31.
  • the light emitting layer 32 includes a plurality of pixel points 301, and each pixel point 301 includes three sub-pixels, namely, an R pixel 321, a G pixel 323, and a B pixel 325.
  • the anode layer 31 is provided with one anode unit 311 corresponding to each sub-pixel, that is, one anode unit 311 is provided corresponding to the R pixel 321, G pixel 323, and B pixel 325, respectively.
  • An accommodating portion 312 is formed between any two adjacent anode units 311, and each accommodating portion 312 is configured to accommodate one of the photosensitive sensor units 51.
  • Each photosensitive sensing unit 51 senses the intensity of the light emitted by a corresponding sub-pixel in the light-emitting layer 32 and generates a corresponding sensing signal, so that the light intensity of the side of each sub-pixel can be used to determine the resistance of the photosensitive sensing unit 51 Changes are judged by aging.
  • FIG. 2 is a schematic cross-sectional structure diagram of an electronic device 1a according to a second embodiment of the present invention.
  • the electronic device 1a is similar to the electronic device 1 described above, except that the at least one photosensitive sensor unit 51 is disposed in the light emitting layer 32.
  • an accommodating portion 312 a is formed between each adjacent two sub-pixels, and each accommodating portion 312 a is configured to accommodate one of the photosensitive sensing units 51.
  • Each photosensitive sensing unit 51 senses the intensity of the light emitted by a corresponding sub-pixel in the light-emitting layer 32 and generates a corresponding sensing signal, so that the light intensity of the side of each sub-pixel can be used to determine the resistance of the photosensitive sensing unit 51. Changes are judged by aging.
  • FIG. 3 is a schematic cross-sectional structure diagram of an electronic device 1b according to a third embodiment of the present invention.
  • the electronic device 1b is similar to the electronic device 1 described above, except that each photosensitive sensor unit 51 is disposed in one of the anode units 311.
  • Each photosensitive sensing unit 51 senses the intensity of the light emitted by the corresponding sub-pixel in the light-emitting layer 32 and generates a corresponding sensing signal, so that the resistance of the photosensitive sensing unit 51 can be used for the resistance of the photosensitive sensing unit 51 using the intensity of the light on the back of each sub-pixel. Changes are judged by aging.
  • FIG. 4 is a schematic cross-sectional structure diagram of an electronic device 1 c according to a fourth embodiment of the present invention.
  • the electronic device 1c is similar to the electronic device 1 described above, except that the cathode layer 33 is provided with a cathode unit 331 corresponding to each sub-pixel.
  • Each photosensitive sensing unit 51 is disposed in one of the cathode units 331.
  • Each photosensitive sensing unit 51 senses the intensity of the light emitted by the corresponding sub-pixel in the light-emitting layer 32 and generates a corresponding sensing signal, so that the resistance of the photosensitive sensing unit 51 can be used for the resistance of the photosensitive sensing unit 51 using the intensity of the light on the back of each sub-pixel. Changes are judged by aging.
  • FIG. 5 is a schematic cross-sectional structure diagram of an electronic device 1d according to a fifth embodiment of the present invention.
  • the electronic device 1d is similar to the electronic device 1 described above, except that the electronic device 1d includes an auxiliary layer F1.
  • the auxiliary layer F1 is located between the substrate layer 10 and the display module 30, or is located between the anode layer 31, the light emitting layer 32, the cathode layer 33, the hole injection layer 34, and the hole transport layer of the display module 30 35. Between any two layers of the electron injection layer 36 and the electron transport layer 37.
  • the auxiliary layer F1 is located between the light emitting layer 32 and the hole transport layer 35.
  • At least one photosensitive sensing unit 51 of the photosensitive sensing component 50 is disposed in the auxiliary layer F1, and each pixel point 301 is correspondingly provided with at least one photosensitive sensing unit 51.
  • each pixel 301 is correspondingly provided with at least one photosensitive sensor unit 51.
  • each sub-pixel that is, the R pixel 321, the G pixel 323, or the B pixel 325, is respectively provided with a photosensitive sensor unit 51 respectively.
  • Each photosensitive sensing unit 51 is configured to sense the intensity of light generated by a corresponding sub-pixel and generate a sensing signal.
  • the processor 70 determines the illumination intensity of the corresponding sub-pixel according to the sensing signal, and when it is determined that the illumination intensity of the corresponding sub-pixel is lower than a preset threshold, performs brightness compensation on the sub-pixel to maintain the display component 30's Uniformity of overall display brightness.
  • the processor 70 determines that the light intensity of the corresponding sub-pixel is greater than the preset threshold according to the sensing signal, it indicates that the corresponding photosensitive sensing unit 51 absorbs more light energy, and the photon energy is greater than or equal to the photosensitive sensing unit
  • the forbidden band width of 51 increases the conductivity of the photosensitive sensor unit 51 and decreases the resistivity. When the resistance decreases, the current increases. At this time, the current is I1.
  • the processor 70 determines that the light intensity of the corresponding sub-pixel is smaller than the preset threshold according to the sensing signal, it indicates that the corresponding photosensitive sensing unit 51 absorbs less light energy and the photon energy is smaller than the forbidden band width of the photosensitive sensing unit 51
  • the light-sensitive sensing unit 51 has a reduced conductivity and a large resistivity. At this time, the resistance is large, the current is small, and the current is I2.
  • the processor 70 determines that the current I1 of the corresponding subpixel is greater than the compensation threshold, it is not necessary to perform brightness compensation on the subpixel, and when it is determined that the current I2 of the corresponding subpixel is less than the compensation threshold, it is necessary to perform brightness compensation on the subpixel.
  • the processor 70 performs brightness compensation by adding current to the sub-pixel.
  • each pixel point 301 of the electronic device 1 needs to be detected after the display component 30 starts to work for a predetermined period of time, wherein the preset time period is based on the display component 30 The characteristics of the light-emitting material of the light-emitting layer 32 are determined.
  • the electronic device 1 includes a pad region 80.
  • the pad area 80 is provided with at least one solder joint 81, the at least one solder joint 81 is electrically connected to the processor 70, and the at least one photosensitive sensor unit 51 and the at least one solder joint 81 are one by one.
  • Correspondence connection Specifically, the photosensitive sensing unit 51 is led out to the pad region 80 through a metal lead 511, and is electrically connected to each corresponding solder joint 81 on the pad region 80.
  • FIG. 7 is a schematic diagram of a cross-sectional structure of a solder joint 81 in an embodiment of the present application.
  • the solder joint 81 includes an insulating layer 811, a metal conductive layer 812, a protective layer 813, a planarization layer 814, and an overlap layer 815, which are disposed on top of each other.
  • the protective layer 813 is disposed on the metal conductive layer 812 and surrounds the metal conductive layer 812.
  • the protective layer 813 is provided with a protective layer opening 8131, and the metal conductive layer 812 layer is from the protective layer opening 8131. It is exposed that the planarizing layer 814 is disposed on the protective layer 813 and surrounds the protective layer 813.
  • the planarizing layer 814 is provided with a planarizing layer opening 8141 at a position corresponding to the protective layer opening 8131.
  • the bonding layer 815 overlaps one of the planarization layer 814, the planarization layer opening 8141, and the protective layer opening 8131, and the metal lead 511 of the photosensitive sensing unit 51 overlaps the overlap.
  • the metal conductive layer 812 is electrically connected to the processor 70.
  • the hole injection layer 34 and the electron injection layer 36 may be omitted. Therefore, the hole transport layer 35 is located between the anode layer 31 and the light emitting layer 32. The electron transport layer 37 is located between the cathode layer 33 and the light emitting layer 32.
  • the hole injection layer 34 and the electron injection layer 36 may be omitted. Therefore, the light emitting layer 32 is disposed between the anode layer 31 and the cathode layer 33.
  • the display component 30 further includes an encapsulation layer.
  • the packaging layer is disposed on a side of the cathode layer 33 facing away from the anode layer 31.
  • the packaging layer is used to protect the display component 30.
  • the display assembly 30 further includes a thin film transistor array, the thin film transistor array is disposed between the substrate layer 10 and the anode layer 31, and each of the thin film transistor arrays
  • the thin film transistor corresponds to a pixel point in the light emitting layer 32.
  • the thin film transistor corresponding to the pixel point in the thin film transistor array is turned on to drive the pixel. Point and make it glow continuously.
  • the above active driving method does not require scanning, the power supply current is constant, high peak current is not required, and power consumption is lower.
  • FIG. 8 is a schematic flowchart of a brightness monitoring compensation method according to an embodiment of the present application.
  • the brightness monitoring compensation method is applied to the aforementioned electronic device 1, and the execution order is not limited to the order shown in FIG. 8.
  • the method includes steps:
  • step 801 when the electronic device 1 is powered on, the photosensitive sensor component 50 senses the light intensity generated by the corresponding pixel point 301 in the display component 30 and generates a sensing signal.
  • Step 802 Determine the light intensity of the corresponding pixel point 301 according to the sensing signal, and when it is determined that the light intensity of the corresponding pixel point 301 is lower than a preset threshold, perform brightness compensation on the corresponding pixel point 301.
  • the brightness compensation refers to compensation by increasing the current of the corresponding pixel point.
  • the electronic device and the brightness monitoring compensation method of the present application can sense the light intensity generated by the corresponding pixel point in the display component through the photosensitive sensor component, and when it is determined that the light intensity of the corresponding pixel point is lower than a preset threshold, The brightness compensation is performed for the corresponding pixel points, so that the display component displays uniformly, and the overall display effect is better.
  • the processor 70 may be a central processing unit (CPU), or other general-purpose processors, digital signal processors (DSPs), and application-specific integrated circuits (ASICs). ), Ready-made programmable gate array (Field-Programmable Gate Array, FPGA) or other programmable logic devices, discrete gate or transistor logic devices, discrete hardware components, etc.
  • the general-purpose processor may be a microprocessor, or the processor may be any conventional processor, etc.
  • the processor is a control center of the electronic device 1 and uses various interfaces and lines to connect the entire electronic device 1 The various parts.
  • the electronic device 1 further includes a memory, and various data of the electronic device 1 can be stored in the memory.
  • the memory may be specifically used to store the computer program and / or module, and the processor 70 runs or executes the computer program and / or module stored in the memory and calls data stored in the memory. Realize various functions of the electronic device 1.
  • the memory may mainly include a storage program area and a storage data area, wherein the storage program area may store an operating system, application programs required for multiple functions (such as a sound playback function, an image playback function, etc.), etc .; the storage data area may store Data (such as audio data, phone book, etc.) created based on the use of the mobile phone.
  • the memory may include a high-speed random access memory, and may also include a non-volatile memory, such as a hard disk, an internal memory, a plug-in hard disk, a Smart Memory Card (SMC), and a Secure Digital (SD). ) Card, flash memory card (Flash card), multiple disk storage devices, flash memory devices, or other volatile solid-state storage devices.
  • a non-volatile memory such as a hard disk, an internal memory, a plug-in hard disk, a Smart Memory Card (SMC), and a Secure Digital (SD).
  • SSD Secure Digital

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  • Electroluminescent Light Sources (AREA)
  • Control Of Indicators Other Than Cathode Ray Tubes (AREA)

Abstract

本申请公开一种电子装置，包括显示组件、光敏传感组件和处理器，显示组件层叠设置在衬底层上，显示组件包括阵列设置的若干像素点，光敏传感组件用于感应显示组件中对应像素点所产生的光照强度并产生感应信号，处理器根据感应信号确定对应像素点的光照强度，并在确定对应像素点的光照强度低于预设阈值时，对对应像素点进行亮度补偿。本申请还公开一种亮度监测补偿方法。本申请通过光敏传感组件感应显示组件中对应像素点所产生的光照强度，并在确定对应像素点的光照强度低于预设阈值时，对对应像素点进行亮度补偿，从而保持显示组件的显示均匀性。

Description

电子装置及其亮度监测补偿方法 技术领域
本申请涉及OLED显示领域，尤其涉及一种电子装置及其亮度监测补偿方法。
背景技术
目前的OLED显示器，RGB像素不同寿命的平衡问题未能得到很好的解决。当OLED显示器的一些RGB像素亮度较低时，导致OLED显示不均匀，显示效果不好。但，现有技术中无法做到对RGB像素亮度的监测及补偿。
发明内容
本申请实施例公开一种电子装置及其亮度监测补偿方法，以解决上述问题。
本申请实施例公开一种电子装置，包括显示组件、光敏传感组件和处理器，所述显示组件包括若干像素点，所述光敏传感组件用于感应所述显示组件中对应像素点所产生的光照强度并产生感应信号，所述处理器根据所述感应信号确定所述对应像素点的光照强度，并在确定所述对应像素点的光照强度低于预设阈值时，对所述对应像素点进行亮度补偿。
本申请实施例公开一种亮度监测补偿方法，应用于一电子装置上。所述亮度监测补偿方法包括步骤：所述光敏传感组件感应所述显示组件中对应像素点所产生的光照强度并产生感应信号；及根据所述感应信号确定所述对应像素点的光照强度，并在确定所述对应像素点的光照强度低于预设阈值时，对所述对应像素点进行亮度补偿。
本申请的电子装置及其亮度监测补偿方法，可通过所述光敏传感组件感应所述显示组件中对应像素点所产生的光照强度，并在确定对应像素点的光照强度低于预设阈值时，对所述对应像素点进行亮度补偿，使得所述显示组件显示均匀，整体显示效果更好。
附图说明
为了更清楚地说明本申请实施例中的技术方案，下面将对实施例中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本申请的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1为本申请第一实施例中的电子装置的截面结构示意图。
图2为本申请第二实施例中的电子装置的截面结构示意图。
图3为本申请第三实施例中的电子装置的截面结构示意图。
图4为本申请第四实施例中的电子装置的截面结构示意图。
图5为本申请第五实施例中的电子装置的截面结构示意图。
图6为本申请一实施例中光敏传感单元连接至焊盘区域的结构示意图。
图7为本申请一实施例中的焊点的截面结构示意图。
图8为本申请一实施例中应用于电子装置的亮度监测补偿方法的流程示意图。
具体实施方式
下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。
请一并参阅图1，图1为本发明第一实施例提供的电子装置1的截面结构示意图。所述电子装置1为手机。可理解，在其它实施例中，所述电子装置1还可以是平板电脑、电子阅读器、穿戴式电子设备等具有显示功能的电子设备，此处不做限定。本实施例中，所述电子装置1为硬板式的不能弯折的电子装置。可理解，在其它实施例中，所述电子装置1还可以是柔性的可以弯折的电子装置，还可以是具有折叠功能的电子装置等，此处不做限定。
具体地，所述电子装置1包括衬底层10、显示组件30、光敏传感组件50和处理器70。所述显示组件30层叠设置在所述衬底层10上。所述衬底层10 为所述显示组件30提供支撑。所述显示组件30包括若干像素点301。所述光敏传感组件50用于感应所述显示组件30中对应像素点301所产生的光照强度并产生感应信号，所述处理器70根据所述感应信号确定所述对应像素点301的光照强度，并在确定所述对应像素点301的光照强度低于预设阈值时，对所述对应像素点301进行亮度补偿。
从而，所述处理器70能够通过所述光敏传感组件50产生的若干感应信号确定所述显示组件30的每个像素点301的光照强度，并在某一像素点301的光照强度低于预设阈值时，对该像素点301进行亮度补偿，从而能够保持所述显示组件30的若干像素点301的显示亮度均匀性，显示效果更好。
具体地，所述光敏传感组件50包括至少一个光敏传感单元51。每个像素点301对应设置至少一个光敏传感单元51，所述至少一个光敏传感单元51用于感应所述显示组件30中对应像素点301所产生的光照强度并产生感应信号。所述处理器70根据所述感应信号确定所述对应像素点301的光照强度，并在确定所述对应像素点301的光照强度低于预设阈值时，对所述对应像素点301进行亮度补偿，从而使得所述显示组件30的若干像素点301的显示亮度整体保持均匀。
从而，所述处理器70能够通过所述至少一个光敏传感单元51产生的若干感应信号确定所述显示组件30的每个像素点301的光照强度，并在某一像素点301的光照强度低于预设阈值时，对该像素点301进行亮度补偿，从而能够保持所述显示组件30的若干像素点301的显示亮度均匀性，显示效果更好。
具体地，所述光敏传感单元51可吸收不同波长的光。当所述光敏传感单元51受到光照，且其光子能量大于其禁带宽度时，所述光敏传感单元51价带中的电子吸收一个光子的能量后可跃迁到导带，并在价带中产生一个带正电荷的空穴，这种由光照产生的电子-空穴增加了半导体材料中载流子的数目，使其电阻率变小，从而造成电阻阻值下降。在外加电场的作用下，回路中的电流会发生相应的改变，因此，所述处理器70可根据电流的变化确定光照强度。
具体地，所述显示组件30包括阳极层31、发光层32、阴极层33、空穴 注入层34、空穴传输层35、电子注入层36和电子传输层37。所述阳极层31层叠设置在所述衬底层10上。所述空穴注入层34层叠设置在所述阳极层31上远离所述衬底层10的一侧。所述空穴传输层35层叠设置在所述空穴注入层34上远离所述阳极层31的一侧。所述发光层32层叠设置在所述空穴传输层35上远离所述空穴注入层34的一侧。所述电子传输层37层叠设置在所述发光层32上远离所述空穴传输层35的一侧。所述电子注入层36层叠设置在所述电子传输层37上远离所述发光层32的一侧。所述阴极层33层叠设置在所述电子注入层36上远离所述电子传输层37的一侧。在所述阳极层31上施加2～10V的直流正电压，且所述阴极层33接地时，所述阳极层31产生的空穴在空穴注入层34和所述空穴传输层35的帮助下移动至所述发光层32，所述阴极层33产生的电子在所述电子注入层36和电子传输层37的帮助下传输至所述发光层32，当所述空穴和所述电子分别向对方移动，并在所述发光层32相遇时，产生能量激子，从而激发发光分子最终产生可见光。
其中，所述至少一个光敏传感单元51可以设置在所述阳极层31、所述发光层32和所述阴极层33中的任意一层中，并且，每个像素点301对应至少一个所述光敏传感单元51。
请再次参考图1，本实施例中，所述至少一个光敏传感单元51设置在所述阳极层31中。具体地，所述发光层32包括若干像素点301，每个像素点301包括三个子像素，即R像素321、G像素323和B像素325。所述阳极层31对应每个子像素设置一个阳极单元311，即对应R像素321、G像素323和B像素325分别设置一个所述阳极单元311。任意相邻的两个阳极单元311之间形成一个收容部312，每个收容部312用于收容一个所述光敏传感单元51。每个光敏传感单元51感应所述发光层32中对应子像素发出的光照强度并产生对应的感应信号，从而能够利用每个子像素侧面的光照强度对所述光敏传感单元51的阻值的变化进行老化判断。
请一并参阅图2，图2为本发明第二实施例提供的电子装置1a的截面结构示意图。电子装置1a与上述电子装置1相似，不同之处在于，所述至少一 个光敏传感单元51设置在所述发光层32中。具体地，每相邻的两个子像素之间形成一个收容部312a，每个收容部312a用于收容一个所述光敏传感单元51。每个光敏传感单元51感应所述发光层32中对应子像素发出的光照强度并产生对应的感应信号，从而能够利用每个子像素侧面的光照强度对所述光敏传感单元51的阻值的变化进行老化判断。
请一并参阅图3，图3为本发明第三实施例提供的电子装置1b的截面结构示意图。电子装置1b与上述电子装置1相似，不同之处在于，每个光敏传感单元51设置在一个所述阳极单元311中。每个光敏传感单元51感应所述发光层32中对应子像素发出的光照强度并产生对应的感应信号，从而能够利用每个子像素背面的光照强度对所述光敏传感单元51的阻值的变化进行老化判断。
请一并参阅图4，图4为本发明第四实施例提供的电子装置1c的截面结构示意图。电子装置1c与上述电子装置1相似，不同之处在于，所述阴极层33对应每个子像素设置一个阴极单元331。每个光敏传感单元51设置在一个所述阴极单元331中。每个光敏传感单元51感应所述发光层32中对应子像素发出的光照强度并产生对应的感应信号，从而能够利用每个子像素背面的光照强度对所述光敏传感单元51的阻值的变化进行老化判断。
请一并参考图5，图5为本发明第五实施例提供的电子装置1d的截面结构示意图。电子装置1d与上述电子装置1相似，不同之处在于，所述电子装置1d包括辅助层F1。所述辅助层F1位于所述衬底层10和所述显示组件30之间，或者位于所述显示组件30的阳极层31、发光层32、阴极层33、空穴注入层34、空穴传输层35、电子注入层36和电子传输层37的任意两层之间。本实施例中，所述辅助层F1位于所述发光层32和所述空穴传输层35之间。所述光敏传感组件50的至少一个光敏传感单元51设置在所述辅助层F1中，并且，每个像素点301对应设置至少一个光敏传感单元51。
可理解，上述第一至第五实施例中，每个像素点301对应设置至少一个光敏传感单元51。可理解，在其它实施例中，每个子像素，也就是R像素321、 G像素323或B像素325，分别对应设置一光敏传感单元51。每个光敏传感单元51用于感应对应子像素所产生的光照强度并产生感应信号。所述处理器70根据所述感应信号确定对应子像素的光照强度，并在确定对应子像素的光照强度低于预设阈值时，对该子像素进行亮度补偿，以维持所述显示组件30的整体显示亮度的均匀性。
具体地，所述处理器70根据所述感应信号确定对应子像素的光照强度大于上述预设阈值时，表明对应的光敏传感单元51吸收光能较多，光子能量大于或等于光敏传感单元51的禁带宽度，光敏传感单元51的导电性增加，电阻率减小，当电阻减小时，电流增大，此时电流为I1。所述处理器70根据所述感应信号确定对应子像素的光照强度小于上述预设阈值时，表明对应的光敏传感单元51吸收光能较少，光子能量小于光敏传感单元51的禁带宽度，光敏传感单元51导电性减小，电阻率大，此时电阻较大，电流很小，电流为I2。
所述处理器70在确定对应子像素的电流I1大于补偿阈值时，无需对该子像素进行亮度补偿，在确定对应子像素的电流I2小于补偿阈值时，需对该子像素进行亮度补偿，所述处理器70通过对该子像素增加电流的方式来进行亮度补偿。
需要说明的是，上述对电子装置1的每个像素点301的亮度检测，需在所述显示组件30开始工作预定时间段后进行检测，其中，该预设时间段需根据所述显示组件30的发光层32的发光材料特性而定。
请一并参考图6，所述电子装置1包括焊盘区域80。所述焊盘区域80设置至少一个焊点81，所述至少一个焊点81分别与所述处理器70电性连接，所述至少一个光敏传感单元51与所述至少一个焊点81一一对应连接。具体地，所述光敏传感单元51通过金属引线511引出到焊盘区域80，并在焊盘区域80上与每个对应的焊点81电性连接。
请一并参考图7，图7为本申请一实施例中焊点81的截面结构示意图。所述焊点81包括层叠设置的绝缘层811、金属导电层812、保护层813、平坦化层814和搭接层815，所述金属导电层812设置在所述绝缘层811之上。所 述保护层813设置在金属导电层812之上且包围所述金属导电层812，所述保护层813上设置有保护层开口8131，所述金属导电层812层从所述保护层开口8131中露出，所述平坦化层814设置在所述保护层813之上且包围所述保护层813，所述平坦化层814对应所述保护层开口8131的位置处设置有平坦化层开口8141，所述搭接层815搭接在其中一个所述平坦化层814以及所述平坦化层开口8141和所述保护层开口8131，所述光敏传感单元51的金属引线511搭接在所述搭接层815上，所述金属导电层812与所述处理器70之间电性连接。
可理解，在其它实施例中，所述空穴注入层34和电子注入层36可省略，从而，所述空穴传输层35位于所述阳极层31和所述发光层32之间，所述电子传输层37位于所述阴极层33和所述发光层32之间。
可理解，在其它实施例中，所述空穴注入层34和所述电子注入层36可省略，从而，所述发光层32设置在所述阳极层31和所述阴极层33之间。
可理解，在其它实施例中，所述显示组件30还包括封装层。所述封装层设置在所述阴极层33背离所述阳极层31的一侧。所述封装层用于保护所述显示组件30。
可理解，在其它实施例中，所述显示组件30还包括薄膜晶体管阵列，所述薄膜晶体管阵列设置在所述衬底层10和所述阳极层31之间，所述薄膜晶体管阵列中的每个薄膜晶体管对应一个所述发光层32中的像素点，所述发光层32中的对应像素点需要点亮时，所述薄膜晶体管阵列中对应该像素点的所述薄膜晶体管被打开以驱动该像素点，并使之连续发光。相对于无源驱动方式而言，上述主动驱动方式无须扫描，供电电流恒定，不需很高的峰值电流，功耗更低。
请一并参阅图8，图8为本申请一实施例中的亮度监测补偿方法的流程示意图。所述亮度监测补偿方法应用于前述的电子装置1中，执行顺序并不限于图8所示的顺序。方法包括步骤：
步骤801，所述电子装置1开机工作时，所述光敏传感组件50感应所述 显示组件30中对应像素点301所产生的光照强度并产生感应信号。
步骤802，根据所述感应信号确定所述对应像素点301的光照强度，并在确定所述对应像素点301的光照强度低于预设阈值时，对所述对应像素点301进行亮度补偿。
具体地，所述亮度补偿是指通过增加所述对应像素点电流的方式予以补偿。
本申请的电子装置及其亮度监测补偿方法，可通过光敏传感组件感应显示组件中对应像素点所产生的光照强度，并在确定对应像素点的光照强度低于预设阈值时，对所述对应像素点进行亮度补偿，使得所述显示组件显示均匀，整体显示效果更好。
其中，所述处理器70可以是中央处理单元(Central Processing Unit，CPU)，还可以是其他通用处理器、数字信号处理器(Digital Signal Processor，DSP)、专用集成电路(Application Specific Integrated Circuit，ASIC)、现成可编程门阵列(Field-Programmable Gate Array，FPGA)或者其他可编程逻辑器件、分立门或者晶体管逻辑器件、分立硬件组件等。通用处理器可以是微处理器或者所述处理器也可以是任何常规的处理器等，所述处理器是所述电子装置1的控制中心，利用各种接口和线路连接整个所述电子装置1的各个部分。
可理解，所述电子装置1还包括存储器，所述电子装置1的各种数据都可存储在所述存储器中。其中，所述存储器具体可用于存储所述计算机程序和/或模块，所述处理器70通过运行或执行存储在所述存储器内的计算机程序和/或模块，以及调用存储在存储器内的数据，实现所述电子装置1的各种功能。所述存储器可主要包括存储程序区和存储数据区，其中，存储程序区可存储操作系统、多个功能所需的应用程序(比如声音播放功能、图像播放功能等)等；存储数据区可存储根据手机的使用所创建的数据(比如音频数据、电话本等)等。此外，所述存储器可以包括高速随机存取存储器，还可以包括非易失性存储器，例如硬盘、内存、插接式硬盘，智能存储卡(Smart Media Card,SMC)，安全数字(Secure Digital,SD)卡，闪存卡(Flash Card)、多个磁盘存储器件、闪存器件、或其他易失性固态存储器件。
以上是本申请的优选实施例，应当指出，对于本技术领域的普通技术人员来说，在不脱离本申请原理的前提下，还可以做出若干改进和润饰，这些改进和润饰也视为本申请的保护范围。

Claims (19)

  1. 一种电子装置，其特征在于，所述电子装置包括显示组件、光敏传感组件和处理器，所述显示组件包括若干像素点，所述光敏传感组件用于感应所述显示组件中对应像素点所产生的光照强度并产生感应信号，所述处理器根据所述感应信号确定所述对应像素点的光照强度，并在确定所述对应像素点的光照强度低于预设阈值时，对所述对应像素点进行亮度补偿。
  2. 如权利要求1所述的电子装置，其特征在于，所述光敏传感组件包括至少一个光敏传感单元，每个光敏传感单元能够吸收不同波长的光，每个光敏传感单元用于在感应对应像素点的光照时产生所述感应信号。
  3. 如权利要求2所述的电子装置，其特征在于，所述显示组件至少包括阳极层、发光层和阴极层，所述发光层层叠设置在所述阳极层上，所述阴极层层叠设置在所述发光层上，所述至少一个光敏传感单元设置在所述阳极层、所述发光层和所述阴极层中的任意一层中，并且，每个像素点对应至少一个所述光敏传感单元。
  4. 如权利要求3所述的电子装置，其特征在于，所述至少一个光敏传感单元设置在所述阳极层中。
  5. 如权利要求4所述的电子装置，其特征在于，所述发光层包括若干像素点，每个像素点包括三个子像素，所述阳极层对应每个子像素设置一个阳极单元，任意相邻的两个所述阳极单元之间形成一个收容部，每个收容部用于收容一个所述光敏传感单元，每个光敏传感单元感应所述发光层中对应子像素发出的光照强度并产生所述感应信号。
  6. 如权利要求3所述的电子装置，其特征在于，所述至少一个光敏传感单元设置在所述发光层中。
  7. 如权利要求6所述的电子装置，其特征在于，所述发光层包括若干像素点，每个像素点包括三个子像素，每相邻的两个子像素之间形成一个收容部，每个收容部用于收容一个所述光敏传感单元，每个光敏传感单元感应所述发光层中对应子像素发出的光照强度并产生所述感应信号。
  8. 如权利要求3所述的电子装置，其特征在于，所述发光层包括若干像素点，每个像素点包括三个子像素，所述阳极层对应每个子像素设置一个阳极单元，每个光敏传感单元设置在一个所述阳极单元中，每个光敏传感单元感应所述发光层中对应子像素发出的光照强度并产生所述感应信号。
  9. 如权利要求3所述的电子装置，其特征在于，所述发光层包括若干像素点，每个像素点包括三个子像素，所述阴极层对应每个子像素设置一个阴极单元，每个光敏传感单元设置在一个所述阴极单元中，每个光敏传感单元感应所述发光层中对应子像素发出的光照强度并产生对应的感应信号。
  10. 如权利要求3所述的电子装置，其特征在于，所述电子装置包括衬底层和辅助层，所述显示组件层叠设置在所述衬底层上，所述辅助层位于所述衬底层和所述显示组件之间，或者位于所述显示组件的任意两层之间，所述光敏传感组件的至少一个光敏传感单元设置在所述辅助层中。
  11. 如权利要求1～10任一项所述的电子装置，其特征在于，所述亮度补偿是增加所述对应像素点的电流予以补偿。
  12. 如权利要求3所述的电子装置，其特征在于，所述显示组件还包括设置在所述阳极层和所述发光层之间的空穴传输层，以及设置在所述发光层和所述阴极层之间的电子传输层，所述空穴传输层用于帮助所述阳极层产生的空穴移动至所述发光层，所述电子传输层用于帮助所述阴极层释放的电子能够顺利传输到所述发光层。
  13. 如权利要求12所述的电子装置，其特征在于，所述显示组件还包括设置在所述阳极层和所述空穴传输层之间的空穴注入层，以及设置在所述电子传输层和所述阴极层之间的电子注入层。
  14. 如权利要求3所述的电子装置，其特征在于，所述显示组件还包括衬底层和薄膜晶体管阵列，所述薄膜晶体管阵列设置在所述衬底层和所述阳极层之间，所述薄膜晶体管阵列中的每个薄膜晶体管对应一个所述发光层中的像素点，所述发光层中的对应像素点需要点亮时，所述薄膜晶体管阵列中对应该像素点的所述薄膜晶体管被打开以驱动该像素点发光。
  15. 如权利要求2所述的电子装置，其特征在于，所述电子装置包括焊盘区域，所述焊盘区域设置至少一个焊点，所述至少一个焊点分别与所述处理器电性连接，所述至少一个光敏传感单元与所述至少一个焊点一一对应连接。
  16. 如权利要求15所述的电子装置，其特征在于，每个所述光敏传感单元均设置有金属引线，所述金属引线将所述光敏传感单元与对应的所述焊点之间电性连接。
  17. 如权利要求16所述的电子装置，其特征在于，每个所述焊点包括层叠设置的绝缘层、金属导电层、保护层、平坦化层和搭接层，所述保护层设置在金属导电层之上且包围所述金属导电层，所述保护层上设置有保护层开口，所述金属导电层从所述保护层开口中露出，所述平坦化层设置在所述保护层之上且包围所述保护层，所述平坦化层对应所述保护层开口的位置处设置有平坦化层开口，所述搭接层搭接在其中一个所述平坦化层以及所述平坦化层开口和所述保护层开口，所述光敏传感单元的金属引线搭接在所述搭接层上，所述金属导电层与所述处理器之间电性连接。
  18. 一种用于权利要求1至17任意一项所述电子装置的亮度监测补偿方法， 其特征在于，所述亮度监测补偿方法包括步骤：
    所述光敏传感组件感应所述显示组件中对应像素点所产生的光照强度并产生感应信号；及
    根据所述感应信号确定所述对应像素点的光照强度，并在确定所述对应像素点的光照强度低于预设阈值时，对所述对应像素点进行亮度补偿。
  19. 如权利要求18所述的亮度监测补偿方法，其特征在于，所述亮度补偿是通过增加所述对应像素点电流的方式予以补偿。
PCT/CN2018/088705 2018-05-28 2018-05-28 电子装置及其亮度监测补偿方法 Ceased WO2019227286A1 (zh)

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