WO2019218310A1 - Quantum dots coated by metal ion pair composite and preparation method therefor - Google Patents

Quantum dots coated by metal ion pair composite and preparation method therefor Download PDF

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WO2019218310A1
WO2019218310A1 PCT/CN2018/087320 CN2018087320W WO2019218310A1 WO 2019218310 A1 WO2019218310 A1 WO 2019218310A1 CN 2018087320 W CN2018087320 W CN 2018087320W WO 2019218310 A1 WO2019218310 A1 WO 2019218310A1
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solution
quantum dot
quantum dots
metal ion
coating
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李良
李志春
孙桦
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Li Liang
Li Zhichun
Sun Hua
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Priority to PCT/CN2018/087320 priority Critical patent/WO2019218310A1/en
Priority to CN201880078547.XA priority patent/CN111433321B/en
Publication of WO2019218310A1 publication Critical patent/WO2019218310A1/en

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    • C09K11/00Luminescent, e.g. electroluminescent, chemiluminescent materials
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  • the invention belongs to the technical field of semiconductor nanomaterials (quantum dots) preparation, in particular to a quantum dot coated with metal ions and a preparation method thereof.
  • Quantum dots have the advantages of wide wavelength range, narrow half-peak width, high fluorescence quantum efficiency, good electrical transmission performance, low cost, simple processing, etc., and have been widely studied and applied in the fields of optoelectronic devices, display illumination, detection and sensing, etc. Wide attention has been the focus of researchers at home and abroad in recent years. Quantum dots are extremely sensitive to water and oxygen and are susceptible to fluorescence quenching due to the surrounding environment. In addition, the high stability of quantum dots is the basis for the study of physical properties and the development of device applications. How to improve the stability of quantum dots is the primary problem of popularization and application.
  • silica coating proposes a method for forming silica in an "anhydrous" environment by directly adding methyl orthosilicate to a toluene solution of quantum dots. While hydrolyzing to form silica, the residual moisture in the toluene solution is quickly consumed, and the damage of the perovskite quantum dots by the residual moisture is minimized, and the obtained perovskite quantum dot/SiO 2 composite is light-stable. Sex has been greatly improved.
  • Polymer coating Zhou et al. (Adv. Mater.
  • the present invention prepares quantum dots coated with metal ions by a two-phase method. Pretreatment of quantum dots with dodecyldimethyl sulfide (S-DDA) or dodecyl dimethyl phosphide (P-DDA) to create sites for ion pair growth, followed by corresponding The metal salt carries out the growth of the ion-pair complex and improves the stability of the quantum dot.
  • S-DDA dodecyldimethyl sulfide
  • P-DDA dodecyl dimethyl phosphide
  • the present invention provides a quantum dot coated with a metal ion and a preparation method thereof.
  • the invention can be realized by the following technical solutions: a quantum dot coated with a metal ion to a composite, characterized in that the metal ion has excellent light stability and chemical stability to the composite coated quantum dot.
  • Step 1) Dissolve a solution of dodecyl dimethylammonium bromide-toluene having a concentration of 0.01-0.2 mmol/mL, labeled as A solution, and at the same time, dispose of sodium hexahydrate in a concentration of 0.01-0.2 mmol/mL or Potassium ethyl xanthate-water solution, labeled as B solution; potassium dihydrogen phosphate or ammonium dihydrogen phosphate-water solution at a concentration of 0.01-0.2 mmol/mL, labeled as C solution; mixed solution A and B solution and sonicated 0.5-2 hours (volume ratio 1:1), after high-speed centrifugation, the above liquid is taken to obtain a dodecyldimethyl sulfide (S-DDA)-toluene solution at a concentration of 0.005-0.1 mmol/mL, labeled as D solution; the same method, the A solution and C solution are mixed to obtain a
  • Step 2 Take 50-200 ⁇ L of the D solution S-DDA or E solution P-DDA obtained in step 1 is added to the quantum dot solution (10-20 mg/mL), and stirred in the range of 25-70 ° C for 0.5-2 hours;
  • Step 3) adding 0.01-0.4 mol of the metal salt to the step 2), stirring in the range of 25-70 ° C for 1-4 hours;
  • Step 4) The quantum dot solution in the step 3) is centrifuged at high speed to remove the unreacted metal salt to obtain a quantum dot coated with the metal ion to the composite.
  • the quantum dots in the quantum dot solution described in step 2 are non-core-shell quantum dots, core-shell quantum dots, and doped quantum dots.
  • the dodecyldimethylammonium bromide may be replaced by bis-decyldimethylammonium bromide or dihexadecyldimethylammonium bromide.
  • the B solution is a sodium sulfide nonahydrate-water solution.
  • the C solution is an ammonium dihydrogen phosphate-water solution.
  • the metal salt is MX, wherein M is lanthanum, cadmium, zinc, mercury, lead, tin, gallium, indium, calcium, strontium, barium, magnesium, strontium, silver or copper.
  • X is an acid ion or a non-acid ion, and also includes chlorinated M, brominated M, fluorinated M, nitric acid M, sulfuric acid M, perchloric acid M, phosphoric acid M, acetic acid M, formic acid M, oxalic acid M, propionic acid M or Acetylacetone M.
  • the different kinds of metal salts may be added in combination.
  • the thickness of the coating material is controlled by adjusting the amount of S-DDA or P-DDA, the amount of metal salt added, and the reaction time.
  • the present invention has the following advantages:
  • the preparation process of the invention is simple,
  • the prepared metal ions can effectively block the erosion of water vapor and oxygen on the quantum dots by the quantum dots coated by the composite, and the light stability thereof is remarkably improved; at the same time, the chemical stability is improved. Sex.
  • 1 is a light attenuation diagram of a coated CsPbBr 3 quantum dot by a nickel sulfide ion;
  • Figure 4 is an optical attenuation diagram of CdSe/CdS/ZnS quantum dots coated with indium sulfide ions.
  • FIG. 6 is a light attenuation diagram of a CsPbBr 3 quantum dot coated with a magnesium sulfide ion pair, a calcium sulfide ion pair, a barium sulfide ion pair, and a barium sulfide ion pair;
  • Figure 7 is a graph showing the light attenuation of CsPbBr 3 quantum dots coated with zinc sulfide ion pairs, chromium sulfide ion pairs, and tin sulfide ions.
  • Figure 1 shows the light attenuation of the coated CsPbBr 3 quantum dots by nickel sulfide ions.
  • the figure shows that compared with the uncoated CsPbBr 3 quantum dots, nickel sulfide ions on the stability of light 3 CsPbBr coated quantum dots were significantly improved.
  • Figure 2 shows the light attenuation of the coated perovskite quantum dots by lead sulfide ions.
  • the figure shows that compared with the uncoated CsPbBr 3 quantum dots, lead sulfide ions light stability CsPbBr 3 coated quantum dots were significantly improved.
  • Figure 3 shows the light attenuation of the coated CsPbBr 3 quantum dots by indium sulfide ions. The figure shows that compared with the uncoated CsPbBr 3 quantum dots, indium sulfide ions on the stability of light 3 CsPbBr coated quantum dots were significantly improved.
  • Figure 4 shows the light attenuation of the coated CdSe/CdS/ZnS quantum dots by indium sulfide ions. As can be seen from the figure, the photostability of the coated CdSe/CdS/ZnS quantum dots is significantly improved compared with the uncoated CdSe/CdS/ZnS quantum dots.
  • the metal ions disclosed in the present invention have good stability to the quantum dots coated by the composite, and many changes and modifications can be made to the above embodiments, and other processing methods such as coating are performed on the basis of the present invention. All such modifications and variations are apparent in the scope of the present disclosure as a result of the improved stability, optical performance and other properties.

Abstract

The present invention relates to quantum dots coated by a metal ion pair composite and a preparation method therefor. Quantum dots are pretreated by an alkyl compound (X-R) to create sites for metal ion growth on the surface of quantum dots, a corresponding metal salt is then added to grow the metal ion pair composite by means of a two-phase method, and after the reaction is carried out for a period of time, quantum dots coated by the metal ion pair composite are obtained. Compared with the prior art, the prepared quantum dots coated with the metal ion pair composite have excellent light stability and chemical stability.

Description

一种金属离子对复合物包覆的量子点及其制备方法Quantum dot coated with metal ion to composite and preparation method thereof 技术领域Technical field
本发明属于半导体纳米材料(量子点)制备技术领域,尤其是涉及一种金属离子对复合物包覆的量子点及其制备方法。The invention belongs to the technical field of semiconductor nanomaterials (quantum dots) preparation, in particular to a quantum dot coated with metal ions and a preparation method thereof.
背景技术Background technique
量子点具有波长范围广、半峰宽窄、荧光量子效率高、电传输性能良好、成本低廉、处理工艺简单等优点,被广泛研究并应用于光电器件、显示照明、检测传感等领域,引起了广泛关注,是近年来国内外学者研究的热点。量子点对水和氧气极为敏感,容易受到周围环境的影响而发生荧光猝灭。此外,量子点的高稳定性是进行物性研究和开发器件应用的基础,如何提高量子点的稳定性是推广应用的首要问题。Quantum dots have the advantages of wide wavelength range, narrow half-peak width, high fluorescence quantum efficiency, good electrical transmission performance, low cost, simple processing, etc., and have been widely studied and applied in the fields of optoelectronic devices, display illumination, detection and sensing, etc. Wide attention has been the focus of scholars at home and abroad in recent years. Quantum dots are extremely sensitive to water and oxygen and are susceptible to fluorescence quenching due to the surrounding environment. In addition, the high stability of quantum dots is the basis for the study of physical properties and the development of device applications. How to improve the stability of quantum dots is the primary problem of popularization and application.
现阶段,提高量子点稳定性主要有以下几种方法:(1)二氧化硅包覆。Huang等(J.Am.Chem.Soc.2016,138,5749-5752)提出在“无水”环境中形成二氧化硅的方法,在量子点的甲苯溶液中,直接加入正硅酸甲酯,在水解形成二氧化硅的同时,快速消耗甲苯溶液中残留的水分,最大限度地降低了残留水分对钙钛矿量子点的破坏,所得到的钙钛矿量子点/SiO 2复合物的光稳定性得到了极大的提升。(2)聚合物包覆。Zhou等(Adv.Mater.2016,28,9163–9168)通过原位聚合法制备了聚偏氟乙烯(PVDF)与量子点的复合薄膜,其具有良好的透光率以及光稳定性。(3)无机盐/量子点复合物。Yang等(J.Mater.Chem.C.2016,4,11387-11391)制备了硝酸钠与量子点的复合物,在紫外灯(365nm,6W)照射14小时后,其荧光强度为初始值的83%;而最初量子点的荧光强度降为原始值的2.7%。(4)表面处理法。Koscher等(J.Am.Chem.Soc.2017,139,6566-6569)使用硫氰酸钠、硫氰酸铵后处理CsPbBr 3量子点,不但提高了量子效率,而且改善了光稳定性。但是,室温下使用金属离子对复合物包覆量子点,提高其稳定性的方法,未见公开报道。 At this stage, there are several methods to improve the stability of quantum dots: (1) silica coating. Huang et al. (J. Am. Chem. Soc. 2016, 138, 5749-5752) propose a method for forming silica in an "anhydrous" environment by directly adding methyl orthosilicate to a toluene solution of quantum dots. While hydrolyzing to form silica, the residual moisture in the toluene solution is quickly consumed, and the damage of the perovskite quantum dots by the residual moisture is minimized, and the obtained perovskite quantum dot/SiO 2 composite is light-stable. Sex has been greatly improved. (2) Polymer coating. Zhou et al. (Adv. Mater. 2016, 28, 9163–9168) prepared a composite film of polyvinylidene fluoride (PVDF) and quantum dots by in-situ polymerization, which has good light transmittance and light stability. (3) Inorganic salts/quantum dot composites. Yang et al. (J. Mater. Chem. C. 2016, 4, 11387-11391) prepared a composite of sodium nitrate and quantum dots. After 14 hours of irradiation on a UV lamp (365 nm, 6 W), the fluorescence intensity was initial. 83%; while the initial quantum dot fluorescence intensity decreased to 2.7% of the original value. (4) Surface treatment method. Koscher et al. (J. Am. Chem. Soc. 2017, 139, 6566-6569) post-treatment of CsPbBr 3 quantum dots using sodium thiocyanate and ammonium thiocyanate, which not only improves quantum efficiency, but also improves light stability. However, the method of coating a quantum dot with a metal ion at a room temperature to improve the stability thereof has not been disclosed.
本发明通过两相法制备金属离子对复合物包覆的量子点。使用双十二烷基二甲基硫化物(S-DDA)或双十二烷基二甲基磷化物(P-DDA)对量子点进行预处理,创 造离子对生长的位点,随后加入相应的金属盐,进行离子对复合物的生长,提高了量子点的稳定性。The present invention prepares quantum dots coated with metal ions by a two-phase method. Pretreatment of quantum dots with dodecyldimethyl sulfide (S-DDA) or dodecyl dimethyl phosphide (P-DDA) to create sites for ion pair growth, followed by corresponding The metal salt carries out the growth of the ion-pair complex and improves the stability of the quantum dot.
发明内容Summary of the invention
为进一步改善量子点的稳定性,本发明提供了一种金属离子对复合物包覆的量子点及其制备方法。In order to further improve the stability of the quantum dots, the present invention provides a quantum dot coated with a metal ion and a preparation method thereof.
本发明可以通过以下技术方案来实现:一种金属离子对复合物包覆的量子点,其特征在于,金属离子对复合物包覆量子点具有优异的光稳定性以及化学稳定性。The invention can be realized by the following technical solutions: a quantum dot coated with a metal ion to a composite, characterized in that the metal ion has excellent light stability and chemical stability to the composite coated quantum dot.
步骤1)配置浓度为0.01-0.2mmol/mL的双十二烷基二甲基溴化铵-甲苯溶液,标记为A溶液,同时,配置浓度为0.01-0.2mmol/mL的九水硫化钠或乙基黄原酸钾-水溶液,标记为B溶液;配置浓度为0.01-0.2mmol/mL的磷酸二氢钾或磷酸二氢铵-水溶液,标记为C溶液;将A溶液与B溶液混合并超声0.5-2小时(体积比1:1),高速离心后取上面的液体得到双十二烷基二甲基硫化物(S-DDA)-甲苯溶液,浓度为0.005-0.1mmol/mL,标记为D溶液;采取同样的方法,将A溶液与C溶液混合,得到双十二烷基二甲基磷化物(P-DDA)甲苯溶液,浓度为0.005-0.1mmol/mL,标记为E溶液;Step 1) Dissolve a solution of dodecyl dimethylammonium bromide-toluene having a concentration of 0.01-0.2 mmol/mL, labeled as A solution, and at the same time, dispose of sodium hexahydrate in a concentration of 0.01-0.2 mmol/mL or Potassium ethyl xanthate-water solution, labeled as B solution; potassium dihydrogen phosphate or ammonium dihydrogen phosphate-water solution at a concentration of 0.01-0.2 mmol/mL, labeled as C solution; mixed solution A and B solution and sonicated 0.5-2 hours (volume ratio 1:1), after high-speed centrifugation, the above liquid is taken to obtain a dodecyldimethyl sulfide (S-DDA)-toluene solution at a concentration of 0.005-0.1 mmol/mL, labeled as D solution; the same method, the A solution and C solution are mixed to obtain a solution of dodecyl dimethyl phosphide (P-DDA) toluene, the concentration of 0.005-0.1mmol / mL, labeled E solution;
步骤2)取50-200μL步骤1所得的D溶液S-DDA或E溶液P-DDA加入量子点溶液(10-20mg/mL),在25-70℃的范围内搅拌0.5-2小时;Step 2) Take 50-200 μL of the D solution S-DDA or E solution P-DDA obtained in step 1 is added to the quantum dot solution (10-20 mg/mL), and stirred in the range of 25-70 ° C for 0.5-2 hours;
步骤3)将0.01-0.4mol的金属盐加入步骤2)中,在25-70℃的范围内搅拌1-4小时;Step 3) adding 0.01-0.4 mol of the metal salt to the step 2), stirring in the range of 25-70 ° C for 1-4 hours;
步骤4)将步骤3)中的量子点溶液高速离心,去除未反应的金属盐,得到金属离子对复合物包覆的量子点。Step 4) The quantum dot solution in the step 3) is centrifuged at high speed to remove the unreacted metal salt to obtain a quantum dot coated with the metal ion to the composite.
其中,步骤2中所述的量子点溶液中的量子点为非核壳结构量子点、核壳结构量子点以及掺杂的量子点。The quantum dots in the quantum dot solution described in step 2 are non-core-shell quantum dots, core-shell quantum dots, and doped quantum dots.
所述的双十二烷基二甲基溴化铵可以替换为双癸基二甲基溴化铵或双十六烷基二甲基溴化铵。The dodecyldimethylammonium bromide may be replaced by bis-decyldimethylammonium bromide or dihexadecyldimethylammonium bromide.
优选的,所述B溶液为九水硫化钠—水溶液。Preferably, the B solution is a sodium sulfide nonahydrate-water solution.
优选的,所述C溶液为磷酸二氢铵—水溶液。Preferably, the C solution is an ammonium dihydrogen phosphate-water solution.
所述的金属盐为MX,其中M为铋、镉、锌、汞、铅、锡、镓、铟、钙、锶、铯、镁、钡、银或铜。X为酸根离子或非酸根离子,还包括氯化M、溴化M、氟 化M、硝酸M、硫酸M、高氯酸M、磷酸M、乙酸M、甲酸M、草酸M、丙酸M或乙酰丙酮M。The metal salt is MX, wherein M is lanthanum, cadmium, zinc, mercury, lead, tin, gallium, indium, calcium, strontium, barium, magnesium, strontium, silver or copper. X is an acid ion or a non-acid ion, and also includes chlorinated M, brominated M, fluorinated M, nitric acid M, sulfuric acid M, perchloric acid M, phosphoric acid M, acetic acid M, formic acid M, oxalic acid M, propionic acid M or Acetylacetone M.
所述不同种类的金属盐可以混合加入。The different kinds of metal salts may be added in combination.
并通过调控S-DDA或P-DDA、金属盐的加入量以及反应时间实现对包覆材料厚度的控制。The thickness of the coating material is controlled by adjusting the amount of S-DDA or P-DDA, the amount of metal salt added, and the reaction time.
化学稳定性测试Chemical stability test
(1)取1mL硫化铟离子对包覆的CsPbBr 3量子点溶液,加入1mL的乙酸甲酯清洗量子点,随后离心再溶解于甲苯; (1) Take 1 mL of indium sulfide ion to coat the coated CsPbBr 3 quantum dot solution, add 1 mL of methyl acetate to clean the quantum dots, and then centrifuge to dissolve in toluene;
(2)重复上述过程,进行不同次数的清洗;(2) repeat the above process and perform different cleaning times;
(3)取不同清洗次数的硫化铟离子对包覆的CsPbBr 3量子点溶液进行化学稳定性测试。 (3) The chemical stability test of the coated CsPbBr 3 quantum dot solution was carried out by taking indium sulfide ions of different cleaning times.
硫化物离子对包覆的量子点光稳定性测试Sulfide ion pair coated quantum dot light stability test
取2.5mL相同含量的量子点、硫化物离子对包覆的量子点溶液于比色皿中并密封。在一定的电流以及电压下进行光稳定性测试(450nm,功率密度175mw/cm2),一定的时间间隔内测试其荧光强度,以此荧光峰的面积与初始荧光峰的面积之比做出强度-时间衰减曲线。Take 2.5 mL of the same amount of quantum dot, sulfide ion pair coated quantum dot solution in a cuvette and seal. The light stability test (450 nm, power density 175 mw/cm2) was carried out under a certain current and voltage, and the fluorescence intensity was measured at a certain time interval, and the intensity of the ratio of the area of the fluorescent peak to the area of the initial fluorescent peak was made - Time decay curve.
与现有技术相比,本发明具有以下优点:Compared with the prior art, the present invention has the following advantages:
本发明制备过程简单,The preparation process of the invention is simple,
与未包覆的量子点相比,制备的金属离子对复合物包覆的量子点,能够有效阻挡水气、氧气对量子点的侵蚀,其光稳定性显著提高;同时,提高了其化学稳定性。Compared with the uncoated quantum dots, the prepared metal ions can effectively block the erosion of water vapor and oxygen on the quantum dots by the quantum dots coated by the composite, and the light stability thereof is remarkably improved; at the same time, the chemical stability is improved. Sex.
附图说明DRAWINGS
图1为硫化镍离子对包覆的CsPbBr 3量子点光衰减图; 1 is a light attenuation diagram of a coated CsPbBr 3 quantum dot by a nickel sulfide ion;
图2为硫化铅离子对包覆的CsPbBr 3量子点光衰减图; 2 is a light attenuation diagram of CsPbBr 3 quantum dots coated with lead sulfide ions;
图3为硫化铟离子对包覆的CsPbBr 3量子点光衰减图; 3 is a light attenuation diagram of CsPbBr 3 quantum dots coated with indium sulfide ions;
图4为硫化铟离子对包覆的CdSe/CdS/ZnS量子点光衰减图Figure 4 is an optical attenuation diagram of CdSe/CdS/ZnS quantum dots coated with indium sulfide ions.
图5为不同清洗次数的硫化铟离子对包覆的CsPbBr 3量子点的荧光变化图; 5 is a graph showing fluorescence changes of coated CsPbBr 3 quantum dots by indium sulfide ions of different cleaning times;
图6为硫化镁离子对、硫化钙离子对、硫化锶离子对以及硫化钡离子对包覆 的CsPbBr 3量子点光衰减图; 6 is a light attenuation diagram of a CsPbBr 3 quantum dot coated with a magnesium sulfide ion pair, a calcium sulfide ion pair, a barium sulfide ion pair, and a barium sulfide ion pair;
图7为硫化锌离子对、硫化铬离子对以及硫化锡离子对包覆的CsPbBr 3量子点光衰减图。 Figure 7 is a graph showing the light attenuation of CsPbBr 3 quantum dots coated with zinc sulfide ion pairs, chromium sulfide ion pairs, and tin sulfide ions.
下面结合附图和具体实施例对本发明进行详细说明。The invention will be described in detail below with reference to the drawings and specific embodiments.
实施例1Example 1
硫化镍离子对包覆的CsPbBr 3量子点的制备 Preparation of Coated CsPbBr 3 Quantum Dots by Nickel Sulfide Ion
(1)按照权利要求1的方法配置1mL的S 2--DDA +溶液(0.05mmol/mL); (1) Configuring a 1 mL solution of S2 - DDA + (0.05 mmol/mL) according to the method of claim 1;
(2)将100μL S 2--DDA +(0.05mmol/mL)加入1mL CsPbBr 3量子点溶液(15mg/mL),25℃搅拌1小时; (2) 100 μL of S 2- -DDA + (0.05 mmol / mL) was added to 1 mL of CsPbBr 3 quantum dot solution (15 mg / mL), and stirred at 25 ° C for 1 hour;
(3)将0.01mmol的四水乙酸镍加入量子点溶液中,25℃搅拌2小时;(3) 0.01 mmol of nickel acetate tetrahydrate was added to the quantum dot solution, and stirred at 25 ° C for 2 hours;
(4)将量子点溶液高速离心(10000转/min)2分钟,去除未反应的金属盐,得到硫化镍离子对包覆的CsPbBr 3量子点。 (4) The quantum dot solution was centrifuged at high speed (10000 rpm) for 2 minutes to remove the unreacted metal salt to obtain a CsPbBr 3 quantum dot coated with nickel sulfide ions.
图1所示为硫化镍离子对包覆的CsPbBr 3量子点的光衰减图。由图可知,与未包覆的CsPbBr 3量子点相比,硫化镍离子对包覆的CsPbBr 3量子点的光稳定性均得到显著提高。 Figure 1 shows the light attenuation of the coated CsPbBr 3 quantum dots by nickel sulfide ions. The figure shows that compared with the uncoated CsPbBr 3 quantum dots, nickel sulfide ions on the stability of light 3 CsPbBr coated quantum dots were significantly improved.
实施例2Example 2
硫化铅离子对包覆的CsPbBr 3量子点的制备 Preparation of coated CsPbBr 3 quantum dots by lead sulfide ion
(1)按照权利要求1的方法配置1mL的S 2--DDA +溶液(0.05mmol/mL); (1) Configuring a 1 mL solution of S2 - DDA + (0.05 mmol/mL) according to the method of claim 1;
(2)将100μL S 2--DDA +(0.1mmol/mL)加入1mL CsPbBr 3量子点溶液(15mg/mL),50℃下搅拌1小时; (2) 100 μL of S 2- -DDA + (0.1 mmol/mL) was added to 1 mL of CsPbBr 3 quantum dot solution (15 mg/mL), and stirred at 50 ° C for 1 hour;
(3)将0.02mmol的溴化铅加入量子点溶液中,50℃搅拌2小时;(3) Adding 0.02 mmol of lead bromide to the quantum dot solution and stirring at 50 ° C for 2 hours;
(4)将量子点溶液高速离心(10000转/min)2分钟,去除未反应的金属盐,得到硫化镍离子对包覆的CsPbBr 3量子点。 (4) The quantum dot solution was centrifuged at high speed (10000 rpm) for 2 minutes to remove the unreacted metal salt to obtain a CsPbBr 3 quantum dot coated with nickel sulfide ions.
图2所示为硫化铅离子对包覆的钙钛矿量子点的光衰减图。由图可知,与未包覆的CsPbBr 3量子点相比,硫化铅离子对包覆的CsPbBr 3量子点的光稳定性均得到显著提高。 Figure 2 shows the light attenuation of the coated perovskite quantum dots by lead sulfide ions. The figure shows that compared with the uncoated CsPbBr 3 quantum dots, lead sulfide ions light stability CsPbBr 3 coated quantum dots were significantly improved.
实施例3Example 3
硫化铟离子对包覆的CsPbBr 3量子点的制备 Preparation of coated CsPbBr 3 quantum dots by indium sulfide ion
(1)按照权利要求1的方法配置1mL的S 2--DDA +溶液(0.05mmol/mL); (1) Configuring a 1 mL solution of S2 - DDA + (0.05 mmol/mL) according to the method of claim 1;
(2)将150μL S 2--DDA +(0.05mmol/mL)加入1mL CsPbBr 3量子点溶液(15mg/mL),25℃搅拌1小时; (2) 150 μL of S 2- -DDA + (0.05 mmol / mL) was added to 1 mL of CsPbBr 3 quantum dot solution (15 mg / mL), and stirred at 25 ° C for 1 hour;
(3)将0.02mmol的乙酸铟加入量子点溶液中,25℃搅拌3小时;(3) adding 0.02 mmol of indium acetate to the quantum dot solution, and stirring at 25 ° C for 3 hours;
(4)将量子点溶液高速离心(10000转/min)2分钟,去除未反应的金属盐,得到硫化镍离子对包覆的CsPbBr 3量子点。 (4) The quantum dot solution was centrifuged at high speed (10000 rpm) for 2 minutes to remove the unreacted metal salt to obtain a CsPbBr 3 quantum dot coated with nickel sulfide ions.
图3所示为硫化铟离子对包覆的CsPbBr 3量子点的光衰减图。由图可知,与未包覆的CsPbBr 3量子点相比,硫化铟离子对包覆的CsPbBr 3量子点的光稳定性均得到显著提高。 Figure 3 shows the light attenuation of the coated CsPbBr 3 quantum dots by indium sulfide ions. The figure shows that compared with the uncoated CsPbBr 3 quantum dots, indium sulfide ions on the stability of light 3 CsPbBr coated quantum dots were significantly improved.
实施例4Example 4
硫化铟离子对包覆的CdSe/CdS/ZnS量子点的制备Preparation of Coated CdSe/CdS/ZnS Quantum Dots by Indium Sulfide Ion
(1)按照权利要求1的方法配置1mL的S 2--DDA +溶液(0.05mmol/mL); (1) Configuring a 1 mL solution of S2 - DDA + (0.05 mmol/mL) according to the method of claim 1;
(2)将150μL S 2--DDA +(0.1mmol/mL)加入1mLCdSe/CdS/ZnS量子点溶液(15mg/mL),70℃搅拌1小时; (2) 150 μL of S 2- -DDA + (0.1 mmol / mL) was added to 1 mL of CdSe / CdS / ZnS quantum dot solution (15 mg / mL), and stirred at 70 ° C for 1 hour;
(3)将0.02mmol的乙酸铟加入量子点溶液中,70℃搅拌2小时;(3) 0.02 mmol of indium acetate was added to the quantum dot solution, and stirred at 70 ° C for 2 hours;
(4)将量子点溶液高速离心(10000转/min)2分钟,去除未反应的金属盐,得到硫化镍离子对包覆的CdSe/CdS/ZnS量子点。(4) The quantum dot solution was centrifuged at high speed (10000 rpm) for 2 minutes to remove the unreacted metal salt to obtain a CdSe/CdS/ZnS quantum dot coated with nickel sulfide ions.
图4所示为硫化铟离子对包覆的CdSe/CdS/ZnS量子点的光衰减图。由图可知,与未包覆的CdSe/CdS/ZnS量子点相比,硫化铟离子对包覆的CdSe/CdS/ZnS量子点的光稳定性均得到显著提高。Figure 4 shows the light attenuation of the coated CdSe/CdS/ZnS quantum dots by indium sulfide ions. As can be seen from the figure, the photostability of the coated CdSe/CdS/ZnS quantum dots is significantly improved compared with the uncoated CdSe/CdS/ZnS quantum dots.
应该强调的是,本发明公布的金属离子对复合物包覆的量子点具有良好的稳定性,可以对上述实施方式进行很多变化和修改,在此基础上对其进行包覆等其它处理方式,提高其稳定性、光学性能以及其它性能,在这里所有这些修改和变化示意图包括在本公开内容的范围内。It should be emphasized that the metal ions disclosed in the present invention have good stability to the quantum dots coated by the composite, and many changes and modifications can be made to the above embodiments, and other processing methods such as coating are performed on the basis of the present invention. All such modifications and variations are apparent in the scope of the present disclosure as a result of the improved stability, optical performance and other properties.

Claims (8)

  1. 一种金属离子对复合物包覆量子点的方法,其特征在于,所述的金属离子对复合物包覆量子点的制备方法如下:A method for coating a quantum dot with a metal ion pair composite, characterized in that the preparation method of the metal ion-composite coated quantum dot is as follows:
    步骤1)配置浓度为0.01-0.2mmol/mL的双十二烷基二甲基溴化铵-甲苯溶液,标记为A溶液,同时,配置浓度为0.01-0.2mmol/mL的九水硫化钠或乙基黄原酸钾-水溶液,标记为B溶液;配置浓度为0.01-0.2mmol/mL的磷酸二氢钾或磷酸二氢铵-水溶液,标记为C溶液;将A溶液与B溶液混合并超声0.5-2小时(体积比1:1),高速离心后取上面的液体得到双十二烷基二甲基硫化物(S-DDA)-甲苯溶液,浓度为0.005-0.1mmol/mL,标记为D溶液;采取同样的方法,将A溶液与C溶液混合,得到双十二烷基二甲基磷化物(P-DDA)甲苯溶液,浓度为0.005-0.1mmol/mL,标记为E溶液;Step 1) Dissolve a solution of dodecyl dimethylammonium bromide-toluene having a concentration of 0.01-0.2 mmol/mL, labeled as A solution, and at the same time, dispose of sodium hexahydrate in a concentration of 0.01-0.2 mmol/mL or Potassium ethyl xanthate-water solution, labeled as B solution; potassium dihydrogen phosphate or ammonium dihydrogen phosphate-water solution at a concentration of 0.01-0.2 mmol/mL, labeled as C solution; mixed solution A and B solution and sonicated 0.5-2 hours (volume ratio 1:1), after high-speed centrifugation, the above liquid is taken to obtain a dodecyldimethyl sulfide (S-DDA)-toluene solution at a concentration of 0.005-0.1 mmol/mL, labeled as D solution; the same method, the A solution and C solution are mixed to obtain a solution of dodecyl dimethyl phosphide (P-DDA) toluene, the concentration of 0.005-0.1mmol / mL, labeled E solution;
    步骤2)取50-200μL步骤1所得的D溶液S-DDA或E溶液P-DDA加入量子点溶液(10-20mg/mL),在25-70℃的范围内搅拌0.5-2小时;Step 2) Take 50-200 μL of the D solution S-DDA or E solution P-DDA obtained in step 1 is added to the quantum dot solution (10-20 mg/mL), and stirred in the range of 25-70 ° C for 0.5-2 hours;
    步骤3)将0.01-0.4mol的金属盐加入2)中,在25-70℃的范围内搅拌1-4小时;Step 3) adding 0.01-0.4 mol of the metal salt to 2), stirring in the range of 25-70 ° C for 1-4 hours;
    步骤4)将3)中的量子点溶液高速离心,去除未反应的金属盐,得到金属离子对复合物包覆的量子点。Step 4) Centrifuging the quantum dot solution in 3) at high speed to remove the unreacted metal salt to obtain a quantum dot coated with the metal ion to the composite.
  2. 根据权利要求1中所述的金属离子对复合物包覆量子点的方法,其特征在于,步骤2中所述的量子点溶液中的量子点为非核壳结构量子点、核壳结构量子点以及掺杂的量子点。The method for coating quantum dots with a metal ion pair composite according to claim 1, wherein the quantum dots in the quantum dot solution in step 2 are non-core-shell quantum dots, core-shell quantum dots, and Doped quantum dots.
  3. 根据权利要求1中所述的金属离子对复合物包覆量子点的方法,其特征在于,所述的双十二烷基二甲基溴化铵可以替换为双癸基二甲基溴化铵或双十六烷基二甲基溴化铵。A method of coating a quantum dot with a metal ion pair composite according to claim 1, wherein said dodecyldimethylammonium bromide is replaceable with bis-decyldimethylammonium bromide Or dihexadecyldimethylammonium bromide.
  4. 根据权利要求1中所述的金属离子对复合物包覆量子点的方法,其特征在于,所述B溶液为九水硫化钠-水溶液。The method of coating a quantum dot with a metal ion pair composite according to claim 1, wherein the B solution is a sodium sulphate nonaqueous solution.
  5. 根据权利要求1中所述的金属离子对复合物包覆量子点的方法,其特征在于,所述C溶液为磷酸二氢铵-水溶液。The method of coating a quantum dot with a metal ion-pair composite according to claim 1, wherein the C solution is an ammonium dihydrogen phosphate-aqueous solution.
  6. 根据权利要求1中所述的金属离子对复合物包覆量子点的方法,其特征在于,所述的金属盐为MX,其中M为铋、镉、锌、汞、铅、锡、镓、铟、钙、锶、 铯、镁、钡、银或铜。X为酸根离子或非酸根离子,还包括氯化M、溴化M、氟化M、硝酸M、硫酸M、高氯酸M、磷酸M、乙酸M、甲酸M、草酸M、丙酸M或乙酰丙酮M。The method for coating a quantum dot with a metal ion pair composite according to claim 1, wherein the metal salt is MX, wherein M is lanthanum, cadmium, zinc, mercury, lead, tin, gallium, indium , calcium, barium, strontium, magnesium, strontium, silver or copper. X is an acid ion or a non-acid ion, and also includes chlorinated M, brominated M, fluorinated M, nitric acid M, sulfuric acid M, perchloric acid M, phosphoric acid M, acetic acid M, formic acid M, oxalic acid M, propionic acid M or Acetylacetone M.
  7. 根据权利要求1中所述的金属离子对复合物包覆量子点的方法,其特征在于,不同种类的金属盐可以混合加入。A method of coating quantum dots with a metal ion-pair composite according to claim 1, wherein different kinds of metal salts can be mixedly added.
  8. 根据权利要求1中所述的硫化物包覆量子点的方法,其特征在于,通过调控S-DDA或P-DDA、金属盐的加入量以及反应时间实现对包覆材料厚度的控制。A method of coating a quantum dot with a sulfide according to claim 1, wherein the control of the thickness of the coating material is achieved by adjusting the amount of S-DDA or P-DDA, the amount of the metal salt added, and the reaction time.
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