WO2019217348A1 - Methods and apparatus for detecting an endpoint of a seasoning process - Google Patents
Methods and apparatus for detecting an endpoint of a seasoning process Download PDFInfo
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- WO2019217348A1 WO2019217348A1 PCT/US2019/031007 US2019031007W WO2019217348A1 WO 2019217348 A1 WO2019217348 A1 WO 2019217348A1 US 2019031007 W US2019031007 W US 2019031007W WO 2019217348 A1 WO2019217348 A1 WO 2019217348A1
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- H—ELECTRICITY
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- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
- H10P72/0606—Position monitoring, e.g. misposition detection or presence detection
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- H—ELECTRICITY
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- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
- H10P72/0612—Production flow monitoring, e.g. for increasing throughput
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- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05B—CONTROL OR REGULATING SYSTEMS IN GENERAL; FUNCTIONAL ELEMENTS OF SUCH SYSTEMS; MONITORING OR TESTING ARRANGEMENTS FOR SUCH SYSTEMS OR ELEMENTS
- G05B13/00—Adaptive control systems, i.e. systems automatically adjusting themselves to have a performance which is optimum according to some preassigned criterion
- G05B13/02—Adaptive control systems, i.e. systems automatically adjusting themselves to have a performance which is optimum according to some preassigned criterion electric
- G05B13/0265—Adaptive control systems, i.e. systems automatically adjusting themselves to have a performance which is optimum according to some preassigned criterion electric the criterion being a learning criterion
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- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05B—CONTROL OR REGULATING SYSTEMS IN GENERAL; FUNCTIONAL ELEMENTS OF SUCH SYSTEMS; MONITORING OR TESTING ARRANGEMENTS FOR SUCH SYSTEMS OR ELEMENTS
- G05B19/00—Program-control systems
- G05B19/02—Program-control systems electric
- G05B19/418—Total factory control, i.e. centrally controlling a plurality of machines, e.g. direct or distributed numerical control [DNC], flexible manufacturing systems [FMS], integrated manufacturing systems [IMS] or computer integrated manufacturing [CIM]
- G05B19/41875—Total factory control, i.e. centrally controlling a plurality of machines, e.g. direct or distributed numerical control [DNC], flexible manufacturing systems [FMS], integrated manufacturing systems [IMS] or computer integrated manufacturing [CIM] characterised by quality surveillance of production
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- G—PHYSICS
- G06—COMPUTING OR CALCULATING; COUNTING
- G06Q—INFORMATION AND COMMUNICATION TECHNOLOGY [ICT] SPECIALLY ADAPTED FOR ADMINISTRATIVE, COMMERCIAL, FINANCIAL, MANAGERIAL OR SUPERVISORY PURPOSES; SYSTEMS OR METHODS SPECIALLY ADAPTED FOR ADMINISTRATIVE, COMMERCIAL, FINANCIAL, MANAGERIAL OR SUPERVISORY PURPOSES, NOT OTHERWISE PROVIDED FOR
- G06Q10/00—Administration; Management
- G06Q10/06—Resources, workflows, human or project management; Enterprise or organisation planning; Enterprise or organisation modelling
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- G—PHYSICS
- G06—COMPUTING OR CALCULATING; COUNTING
- G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
- G06T7/00—Image analysis
- G06T7/0002—Inspection of images, e.g. flaw detection
- G06T7/0004—Industrial image inspection
- G06T7/001—Industrial image inspection using an image reference approach
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
- H10P72/0604—Process monitoring, e.g. flow or thickness monitoring
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
- H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
- H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
- H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
- H10P74/238—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes comprising acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection or in-situ thickness measurement
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
- H10P74/27—Structural arrangements therefor
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05B—CONTROL OR REGULATING SYSTEMS IN GENERAL; FUNCTIONAL ELEMENTS OF SUCH SYSTEMS; MONITORING OR TESTING ARRANGEMENTS FOR SUCH SYSTEMS OR ELEMENTS
- G05B2219/00—Program-control systems
- G05B2219/30—Nc systems
- G05B2219/45—Nc applications
- G05B2219/45031—Manufacturing semiconductor wafers
Definitions
- the present application relates to methods and apparatus for detecting an endpoint of a seasoning process in a process chamber.
- Semiconductor device fabrication includes a series of processes that produce electrical circuits in a semiconductor, e.g., a silicon substrate, in accordance with a circuit design. Many fabrication processes, such as deposition or etching, are performed in a process chamber, such as a chemical vapor deposition (CVD) chamber.
- CVD chemical vapor deposition
- An efficient, non-damaging cleaning of the process chamber is important for smooth operation of the processes as well as improved device yield and better product performance. Thus, periodic chamber maintenance is needed to improve performance of a chamber for producing high quality semiconductor devices.
- the present disclosure provides methods and apparatus for detecting an endpoint of a seasoning process in a process chamber.
- an apparatus for detecting an end point of a seasoning process in a process chamber may include a process chamber, a set of sensors coupled to the process chamber, at least one storage configured to store seasoning data indicating a progress of a past seasoning process for each substrate of a first plurality of substrates, and historical parameter values measured from a plurality of sensors selected from the set of sensors during the past seasoning process performed over each substrate of the first plurality of substrates.
- the apparatus may further include a controller configured to normalize the historical parameter values for each substrate of the first plurality of substrates with respect to a plurality of parameter values for a particular substrate of the first plurality of substrates.
- the controller may also be configured to generate a multi-variate analysis (MVA) model by applying a set of coefficients to the normalized historical parameter values for each substrate of the first plurality of substrates, and determine the set of coefficients by performing a regression operation on output values of a logistic equation. Inputs of the logistic equation are outputs of the MVA model with the normalized historical parameter values for each substrate of the first plurality of substrates.
- the controller may be further configured to receive a plurality of substantially real-time parameter values from the plurality of sensors when processing a second plurality of substrates, and determine an end point of the seasoning process using the MVA model with the plurality of substantially real-time parameter values.
- a method for detecting an endpoint of a seasoning process in a process chamber may include obtaining seasoning progress data indicating a progress of a past seasoning process for each substrate of a first plurality of substrates, obtaining historical parameter values measured from a plurality of sensors selected from a set of sensors coupled to a process chamber during the past seasoning process performed over each substrate of the first plurality of substrates.
- the method may also include normalizing the historical parameter values for each substrate of the first plurality of substrates with respect to a plurality of parameter values for a particular substrate of the first plurality of substrates, generating a multi-variate analysis (MVA) model by applying a set of coefficients to the normalized historical parameter values for each substrate of the first plurality of substrates, and determining the set of coefficients by performing a regression operation on outputs of a logistic equation.
- MVA multi-variate analysis
- the method may further include receiving a plurality of substantially real-time parameter values from the plurality of sensors when processing each substrate of a second plurality of substrates, and determining an end point of the seasoning process using the MVA model with the plurality of substantially real-time parameter values.
- a method for detecting an endpoint of a seasoning process includes obtaining seasoning progress data indicating a progress of a seasoning process for each substrate of a first plurality of substrates.
- the method may also include obtaining historical parameter values measured from a subset of a plurality of sensors coupled to a process chamber, each sensor in the plurality of sensors measuring a parameter of the seasoning process when processing each substrate of the first plurality of substrates.
- the method may also include normalizing the historical parameter values with respect to a subset of the historical parameter values associated with a particular substrate of the first plurality of substrates.
- the method may also include normalizing the seasoning progress data for each substrate of the first plurality of substrates with respect to seasoning progress data associated with a completed seasoning process.
- the method may also include generating a multi-variate analysis (MVA) model by applying a coefficient to each normalized historical parameter values for the first plurality of substrates, wherein the coefficients are determined by performing a regression operation on a plurality of outputs of a logistic equation, where inputs of the logistic equation are outputs of the MVA model.
- the method may also include receiving a plurality of substantially real-time parameter values from the subset of sensors when processing each substrate of a second plurality of substrates.
- the method may also include determining an end point of the seasoning process using the MVA model with the plurality of substantially real-time parameter values.
- FIG. 1 is a schematic cross-sectional view of a process chamber in accordance with aspects of the present disclosure.
- FIG. 2A is a schematic block diagram of a process control system for detecting an endpoint of a seasoning process in accordance with aspects of the present disclosure.
- FIG. 2B illustrates results of a regression process in accordance with aspects of the present disclosure.
- FIG. 3 is a flowchart for a method of detecting an endpoint of the seasoning process in accordance with aspects of the present disclosure.
- FIG. 4 illustrates an exemplary configuration of a process control system in accordance with aspects of the present disclosure.
- FIG. 1 is a schematic cross-sectional view of a process chamber 100 according to one aspect of the present disclosure.
- the process chamber 100 includes a chamber body 111 , a dielectric dome 112, a chemical delivery module 121 , a first RF match 122, a second RF match 124, and a plurality of sensors 131- 138.
- the dielectric dome 112 is adjacent to a showerhead assembly 106.
- a process volume 109 is at least partially defined by the chamber body 111 and the dielectric dome 112.
- a substrate support 108 is disposed in the process volume 109.
- the showerhead assembly 106 is disposed in the process volume 109 opposite the substrate support 108.
- the showerhead assembly 106 includes multiple processing gas channels including a first gas channel 106A and a second gas channel 106B. One or more process gases are delivered to the process volume
- One or more openings (not shown) formed through the showerhead fluidly connect the first gas channel 106A and the second gas channel 106B to the process volume 109.
- the chemical delivery module 121 delivers various process gases to the first process gas channel 106A and the second process gas channel 106B from one or more gas sources (not shown).
- the various process gases may include a precursor gas, a carrier gas, and/or a purge gas for a deposition process or an etching process.
- the first RF match circuit 122 is coupled to a Radio Frequency (RF) power source 123 of, e.g., 12.56 MHz, and supplies RF (or AC) power to an inductive coil
- RF Radio Frequency
- a second RF match circuit 124 is coupled with a bias power source 125 of, e.g., 13.56 MHz, and supplies RF (or AC) power to a cathode 126 disposed in the substrate support 108.
- the second RF match circuit 124 controls ion bombardment energy delivered to a substrate 107 disposed on the substrate support 108.
- the substrate 107 is a silicon substrate used for semiconductor device fabrication.
- the cathode 126 is part of an electrostatic chuck (not shown) embedded within the substrate support 108.
- the electrostatic chuck can be thermally controlled during an etching process using a gas, such as helium, to cool the electrostatic chuck and the substrate 107.
- the RF (or AC) power supplied to the inductive coil 110 and to the cathode 126 may vary depending on particular applications.
- the plurality of sensors 131-138 may include one or more of a voltage and/or current probe (or VI probe), an optical sensor, a temperature sensor, a pressure sensor, gas sensor, and other sensors at suitable locations in the process chamber 100.
- the sensors 131-138 measure electrical, mechanical, and/or chemical parameters pertinent to the operation of the process chamber 100.
- the sensor 131 is a VI probe for sensing a voltage and/or current at the inductive coil 110.
- the sensors 132 and 133 are flow sensors for measuring flow rates inside each of the first gas channel 106A and the second gas channel 106B.
- the sensor 134 is an optical spectrometer for detecting a plurality of spectral bands for measuring a temperature of the plasma or the substrate 107.
- the sensor 135 is a pressure sensor for measuring a pressure in the process chamber 100.
- the sensor 136 is a temperature sensor for measuring a temperature inside the process chamber 100.
- the sensor 137 is a gas sensor for measuring a concentration (or density) of a gas in the process volume 109.
- the sensor 137 is an oxygen sensor for measuring a concentration of oxygen in the process chamber 100. An adjustment of oxygen over time can be calculated based on the measured concentration of oxygen.
- the sensor 138 is another VI probe for measuring a voltage and/or current at the cathode 126. Many other sensors can be deployed at suitable locations in the process chamber 100 to measure parameters needed to identify a status of the process chamber 100 during an operation thereof.
- the process chamber 100 includes a controller 105 to control aspects of the process chamber 100 during plasma processing.
- the controller 105 comprises a central processing unit (CPU) 101 , a memory 102, and support circuits 103 for the CPU 101.
- the controller 105 is coupled to and facilitates control of the various components and operation of the process chamber 100.
- the controller 105 as shown, is coupled to the sensors 131-138, the chemical delivery module 121 , the first RF match circuit 122, and the second RF match circuit 124.
- the controller 105 may be one of any form of general-purpose computer that can be used in an industrial setting for controlling various chambers and sub-processors.
- the memory 102 stores software (source or object code) that may be executed or invoked to control the overall operations of the process chamber 100 in manners described herein.
- the controller 105 may also include a storage 104 where measurements from the various sensors 131-138 are stored. The stored measurements may include historical values of parameters for various processes performed in the process chamber 100.
- the controller 105 manipulates operations of controllable components in the process chamber 100. For example, the controller 105 may select and activate different groups of the plurality of sensors 131-138 for different types of processes performed in the process chamber 100, such as a seasoning process and/or a production process, such as deposition or etching. The controller 105 may receive signals from the activated sensors to monitor various parameters of the processes performed.
- Examples of the process chamber 100 can include chemical vapor deposition (CVD) chambers such as AKT ® PECVD chambers, PRODUCERTM chambers, and PRECISION 5000 ® chambers commercially available from Applied Materials Inc., Santa Clara, California.
- CVD chemical vapor deposition
- FIG. 2A is a schematic block diagram of a process control system 200 for detecting an endpoint of a seasoning process in accordance with aspects of the present disclosure.
- the process control system 200 may be incorporated into the controller 105 described with respect to FIG. 1 , or may be implemented on a computing system separate from the controller 105.
- the process control system 200 includes seasoning progress data storage 202, historical sensing data storage 204, a sensor interface 206, a sensing data normalizer 210, an MVA model generator 212, an MVA model regressor 214, and an MVA analyzer 216.
- Seasoning progress data ⁇ R ⁇ R 2 , ... R n ] is obtained during processing of each substrate of the first plurality of substrates.
- the seasoning progress data is stored in the seasoning progress data storage 202.
- the progress data in the seasoning progress data storage 202 may be progress data for previously completed seasoning processes.
- the seasoning progress data can include any parameter values indicating a progress of the seasoning operation at various times during the processing of each substrate of the first plurality of substrates (e.g., 1 , 2, 3,... , N). While each substrate is processed, the parameters in the seasoning progress data change as the seasoning process progresses and the process chamber becomes seasoned.
- the seasoning progress data in the seasoning progress data storage 202 may be recorded and maintained chronologically, or with reference to a time stamp. This enables the progress data to be analyzed sequentially to estimate an endpoint of the seasoning process at which the process chamber is fully seasoned.
- the seasoning progress data for each substrate can include an etch rate indicating a rate at which a material is removed from a surface of a substrate. The etch rate can be measured, for example, by measuring an amount of material etched for a period of time.
- the seasoning progress data may also include an etch selectivity indicating a ratio of etch rates between two materials under the same conditions, and/or an undercut factor indicating the lateral extent of an etching under a etch mask.
- the etch selectivity can be measured, for example, by etching two overlapped layers and measuring a thickness of the lower layer after being etched.
- the undercut factor can be measured, for example, by placing a resist layer over an etched structure of a length L and a width W, and measuring a signal related to a resistance change on the resist layer.
- the seasoning progress data may include concentrations of oxygen (0 2 ), or nitrogen (N 2 ) or another gas, in the process chamber during the seasoning process.
- the seasoning progress data storage 202 can store progress data for many seasoning processes. For example, progress data for more than ten (10) seasoning processes performed during a prior three month period may be stored in the seasoning progress data storage 202.
- the process chamber can be considered fully seasoned when a measured oxygen (0 2 ) adjustment in the process chamber is a less than a predetermined threshold.
- the normalized seasoning progress data indicates how much the process chamber is seasoned for each substrate during a seasoning operation.
- the normalized seasoning progress data can be used as reference data for determining a set of coefficients via a regression analysis as described below in connection with the MVA model regressor 214.
- the seasoning progress data may be normalized before the data is stored in the seasoning progress data storage 202.
- the seasoning progress data may be stored in in the seasoning progress data storage 202 without being normalized. In that case, the seasoning progress data may be normalized at a later time by the process control system 200.
- Historical sensing data storage 204 stores historical parameter values detected from a plurality of sensors installed in the process chamber during operation of the process chamber. To capture historical parameters for a seasoning process, parameter values are obtained by the plurality of sensors during the seasoning process. The parameter values are recorded and stored in the historical sensing data storage 204 in chronological order.
- each sensor of the plurality of sensors can measure a parameter value at a certain point in time during processing of a particular substrate. For example, each sensor of the plurality of sensors can detect a parameter value at a median time of the process performed on the particular substrate. In another embodiment, which can be combined with one or more embodiments described above, each sensor can detect a parameter value at multiple points in time during processing of the particular substrate. In such a case, a maximum or minimum parameter value, or an average of a parameter value over time can be determined for the particular substrate.
- the parameter values for the process performed in the process chamber may include a voltage, an electrical current, a flow rate, spectral data, a temperature, a pressure or many other features associated with a seasoning process. Some parameter values are measured in the process chamber during a seasoning process. Other parameter values are measured outside of, but adjacent to, the process chamber. For example, a voltage, electrical current, or flow rate of a gas may be measured outside of the process chamber.
- different subsets of the plurality of sensors may be selected and activated for different types of seasoning processes.
- the process control system 200 can select and activate flow rate sensors for etching gases, such as silicon tetrachloride (SiCU) gas and chlorine (Cl 2 ) gas.
- etching gases such as silicon tetrachloride (SiCU) gas and chlorine (Cl 2 ) gas.
- SiCU silicon tetrachloride
- Cl 2 chlorine
- the process control system 200 can select and activate flow rate sensors for a silicon-containing gas, such as one or more of silanes, halogenated silanes, or organosilanes.
- a first plurality of substrates is sequentially processed in a process chamber.
- the first plurality of substrates may be used solely for the seasoning process of the chamber and not for production substrates.
- Each substrate of the first plurality of substrates is loaded into the process chamber and a predetermined process is performed on the substrate to season the process chamber.
- the process chamber is considered seasoned when a variance in the measured parameters of the predetermined process have stabilized within a threshold or range.
- parameters of interest can be normalized so that chronological profiles of the parameters can be used simultaneously.
- the parameters for the selected substrate, P A j are used to normalize the parameters of all the other substrates in the first plurality of substrates.
- the selected substrate may be any substrate in the first plurality of substrates processed during the seasoning operation.
- the selected substrate may be the first, second, third, fourth, or fifth substrate in the first plurality of substrates processed.
- the substrate selected as the basis for normalization is chosen such that all parameter values P A j for that substrate are non zero.
- the substrate selected as the basis for normalization is chosen such that all parameter values P A j for that substrate are non zero.
- the substrate selected as the basis for normalization is chosen such that all parameter values P A j for that substrate are non zero.
- the substrate selected as the basis for normalization is chosen such that all parameter values P A j for that substrate are non zero.
- the substrate selected as the basis for normalization is chosen such that all parameter values P A j for that substrate are non zero.
- the sensing data normalizer 210 is described as normalizing the parameter values of each substrate of the first plurality of substrates using the parameter values measured while processing the second substrate.
- other substrates may be selected as the basis for normalization.
- the MVA model generator 212 generates a multi-variate analysis (MVA) model using the normalized parameter values.
- the polynomial equation for the i-th substrate is as follows: c i jXi j .
- the number y t is thus a linear combination of the parameter values recorded for i-th substrate.
- y* is a weighted average of the parameter values recorded for substrate i.
- FIG. 2B is a graph 220 illustrating results of an exemplary regression process in accordance with aspects of the present disclosure.
- the vertical axis indicates a seasoning index representing a progress of the seasoning operation and the horizontal axis indicates a sequential order of substrates processed during the seasoning operation.
- about 47 data points 222 are plotted on the graph 220.
- Each data point 222 represents normalized seasoning progress data ⁇ ff 1; R 2 , ... Ri] for each substrate of the first plurality of substrates during a seasoning operation.
- a curve 224 is a plot of the logistic equation based on regression by the MVA model using the normalized parameter values x i j for each substrate of the first plurality of substrates.
- the set of coefficients c k j can be determined by performing various regression techniques on the logistic equation.
- the model of y t may be used to minimize the squared error of the data points 222 relative to the curve 224.
- the least squares regression method may be adopted to fit the curve 224 to the normalized seasoning progress data ⁇ R ⁇ R 2 , ... ff* ⁇ .
- the least squares regression method seeks to minimize the sum of the squares of the errors between each output of the logistic equation ⁇ S 1; S 2 , ...S* ⁇ and each of the seasoning progress data ⁇ R ⁇
- a substantially horizontal dashed line 226 indicates a threshold seasoning index at which the chamber is considered fully seasoned. As illustrated, the dashed line 226 is plotted at the seasoning index of about 0.95. However, other indices such as 0.85, 0.9, or 0.97 can be used for the threshold seasoning index.
- the MVA model regressor 214 performs regression analysis of the set of coefficients to fit the seasoning progress data to the logistic equation.
- the MVA model regressor 214 fits the respective seasoning indices to the corresponding seasoning progress data ff ; for each substrate number, i, to determine the set of coefficients ⁇ c k j ⁇ .
- the MVA model regressor 214 employs a support vector machine (SVM) model, which is a machine learning algorithm that analyzes data for classification and regression analysis.
- SVM support vector machine
- the SVM model can determine the set of coefficients that minimizes the errors between outputs by adjusting a position of a hyperplane to have a maximum margin from vectors of the seasoning indices.
- the MVA model regressor 214 employs a least square fit method to determine the set of coefficients ⁇ c fe ; ⁇ that minimize a least-square error between respective seasoning indices S t and corresponding seasoning progress data for each substrate, i.
- the MVA model regressor 214 employs another suitable regression model, such as a linear regression or a polynomial regression to determine the set of coefficients that minimizes the errors.
- the MVA analyzer 216 can determine an end point of the seasoning operation based on the seasoning indices S*.
- the sensor interface 206 receives a plurality of substantially real-time parameter values from the plurality of sensors when processing each substrate of a second plurality of substrates.
- the substantially real-time parameter values may be obtained from various sensors of the plurality of sensors, depending on the seasoning process performed.
- the substantially real-time parameter values include the same types of sensing parameter values as the historical parameter values.
- the substantially real-time parameter values are provided to the sensing data normalizer 210 for normalization.
- the sensing data normalizer 210 normalizes the plurality of substantially real-time parameter values as described above.
- the normalized real-time sensing data for each substrate of the second plurality of substrates are provided to the MVA analyzer 216.
- the MVA analyzer 216 enters the outputs of the polynomial equation into the logistic equation to produce seasoning indices for each substrate of the second plurality of substrates.
- the MVA analyzer 216 detects an end point of the seasoning process based on whether the seasoning indices for the second plurality of substrates meet criteria for completion of the seasoning process.
- the criteria for completion of the seasoning process may be an arbitrary number of substrates with seasoning indices above an arbitrary threshold.
- the arbitrary number of substrates can be 3 and the arbitrary threshold seasoning index can be 0.95. That is, at least 3 substrates need to have seasoning indices higher than 0.95 to indicate that the seasoning process is complete.
- FIG. 2B illustrates a seasoning operation being performed on the second plurality of substrates and that the criteria for completion of the seasoning process has already been determined.
- the data point 227 representing a seasoning index for the thirty-third (33rd) substrate of the second plurality of substrates processed during the seasoning operation, is the third substrate with a seasoning index higher than the threshold 226 of 0.95.
- the data point 227 indicates that upon completion of processing the thirty-third substrate, the seasoning process for the chamber is complete.
- the MVA analyzer 216 can detect an end point of the seasoning process at the completion of processing the thirty-third substrate.
- the criteria for completion of the seasoning process can be any number of substrates with a seasoning index above any arbitrary threshold.
- FIG. 3 illustrates a method 300 for detecting an endpoint of the seasoning process in accordance with aspects of the present disclosure.
- the method begins at operation 302 where a process control system for controlling the seasoning operation obtains seasoning progress data for each substrate of a first plurality of substrates.
- the seasoning progress data may indicate a progress of a previously performed seasoning process.
- the seasoning progress data can include sensing values obtained from sensors in the process chamber or calculated values obtained based on the sensing values.
- the seasoning progress data may be normalized with respect to seasoning data measured while the process chamber operated in a fully seasoned state prior to cleaning of the process chamber.
- the process control system may be directly or remotely coupled to the process chamber in which the seasoning process is performed.
- the process control system obtains historical parameter values measured using a plurality of sensors installed in the process chamber.
- the parameter values used to determine progress of a seasoning operation for a particular process chamber may depend on the process performed in that chamber. That is, if a collection of parameter values exists for a particular process chamber, a subset of those parameter values may correspond to a particular seasoning process performed in that process chamber. Another subset of parameter values may correspond to a different seasoning process for that chamber. Thus, the parameter values selected to determine a status of seasoning the process chamber may be based on the particular process performed therein.
- the process control system selects and activates a plurality of sensors in the process chamber to use in monitoring the seasoning operation.
- the plurality of sensors selected for monitoring may depend on the type of seasoning process performed.
- the process control system derives a plurality of parameter values for each substrate of the first plurality of substrates processed during the seasoning process from sensing data captured by the selected plurality of sensors. Subsequently, the process control system normalizes parameter values of the plurality of parameter values for each substrate with respect to corresponding parameter values associated with a particular substrate of the first plurality of substrates, such as the second substrate.
- the particular substrate can be one of the first, third, fourth, or higher order substrate processed in the process chamber.
- the process control system generates a multi-variate analysis (MVA) model using the normalized parameter values.
- the MVA model can be a polynomial equation which is obtained by applying a set of coefficients to the normalized parameter values for each substrate of the first plurality of substrates.
- Outputs of an MVA model generator may be outputs of the polynomial equations for each substrate of the first plurality of substrates.
- the outputs of the MVA model generator are utilized as inputs to a logistic equation which results in an output of a seasoning index.
- the seasoning index indicates progress of the seasoning process.
- Each seasoning index is a function of the set of coefficients.
- the MVA model is regressed with respect to the normalized seasoning progress data.
- the regression may be applied using various regression algorithms such that a sum of errors is minimized between outputs of the logistic equation and the seasoning progress data.
- a support vector machine (SVM) model may be employed to determine the set of coefficients that minimizes the errors by adjusting a position of a hyperplane to have a maximum margin from vectors of the reference data.
- the MVA model may be regressed using other suitable regression models, such as a linear regression or a polynomial regression to determine the set of coefficients that minimizes the errors.
- the process control system receives and normalizes a plurality of substantially real-time parameter values from the plurality of sensors while processing each substrate of the second plurality of substrates.
- the normalized sensing data from operation 304 is provided to the MVA model.
- the outputs of the MVA model are entered into the logistic equation, which yields seasoning indices for each substrate of the second plurality of substrates.
- the system detects an end point of the seasoning process based on criteria for the completion of seasoning process.
- the criteria may be a number of substrates of the second plurality of substrates with a seasoning index above a threshold.
- FIG. 4 illustrates a configuration of a process control system 400 configured to implement methods described herein, such as the method 300 of detecting an end point of a seasoning process, discussed above with respect to FIG. 3.
- the process control system 400 includes: a central processing unit (CPU) 402 for executing programming instructions; a sensor interface 206 which may allow for the connection of various sensors; a network interface 405, which may include, for example, a transceiver for transmitting and receiving data from an external network; a memory 408, such as a volatile random access memory; a storage 410, such as a non-volatile disk drive, RAID array, etc.; and an interconnect 412, such as a data bus.
- some or all of the storage 410 may be remote from the process control system 400 and may instead be accessed via the network interface 405.
- the CPU 402 retrieves and executes executable instructions stored in memory 408 via interconnect 412.
- the memory 408 includes the MVA model generator 212, the MVA model regressor 214, the MVA analyzer 216, and the sensing data normalizer 210. These components correspond to the components of the process control system 200 described with respect to FIG. 2A.
- the memory 408 includes program code for implementing these components.
- the CPU 402 also retrieves and processes data from the storage 410.
- the storage 410 includes the seasoning progress data storage 202 and historical sensing data storage 204, as described with respect to FIG. 2A.
- exemplary means“serving as an example, instance, or illustration.” Any aspect described herein as “exemplary” is not necessarily to be construed as preferred or advantageous over other aspects.
- the term “determine” or“determining” encompasses a wide variety of actions. For example, “determining” may include calculating, computing, processing, deriving, investigating, looking up (e.g., looking up in a table, a database, or another data structure), ascertaining, and the like. Also, “determining” may include receiving (e.g., receiving information), accessing (e.g., accessing data in a memory), and the like. Also,“determine” or“determining” may include resolving, selecting, choosing, establishing, and the like.
- the methods disclosed herein include one or more operations or actions for achieving the methods.
- the operations and/or actions may be interchanged with one another without departing from the scope of the claims.
- the order and/or use of specific operations and/or actions may be modified without departing from the scope of the claims.
- the various operations described herein may be performed by any suitable means capable of performing the corresponding functions.
- the means may include various hardware and/or software component(s) and/or module(s), including, but not limited to a circuit, an application specific integrated circuit (ASIC), or a processor.
- ASIC application specific integrated circuit
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| CN201980028383.4A CN112041976B (en) | 2018-05-09 | 2019-05-07 | Method and apparatus for detecting the end point of an aging process |
| KR1020207035186A KR102477573B1 (en) | 2018-05-09 | 2019-05-07 | Methods and Apparatus for Detecting Endpoint of Seasoning Process |
| JP2020563549A JP7141471B2 (en) | 2018-05-09 | 2019-05-07 | Method and Apparatus for Detecting End Point of Seasoning Process |
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| US201862669148P | 2018-05-09 | 2018-05-09 | |
| US62/669,148 | 2018-05-09 |
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| JP (1) | JP7141471B2 (en) |
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| TW (1) | TWI834662B (en) |
| WO (1) | WO2019217348A1 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2024503282A (en) * | 2021-01-06 | 2024-01-25 | アプライド マテリアルズ インコーポレイテッド | Autonomous substrate processing system |
| US12237158B2 (en) | 2020-11-24 | 2025-02-25 | Applied Materials, Inc. | Etch feedback for control of upstream process |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11901203B2 (en) | 2021-06-10 | 2024-02-13 | Applied Materials, Inc. | Substrate process endpoint detection using machine learning |
| US20220397515A1 (en) * | 2021-06-10 | 2022-12-15 | Applied Materials, Inc. | Obtaining substrate metrology measurement values using machine learning |
| KR20250030037A (en) * | 2021-06-10 | 2025-03-05 | 어플라이드 머티어리얼스, 인코포레이티드 | Substrate process endpoint detection using machine learning |
| US11965798B2 (en) | 2021-06-10 | 2024-04-23 | Applied Materials, Inc. | Endpoint detection system for enhanced spectral data collection |
| US12135529B2 (en) * | 2021-12-14 | 2024-11-05 | Applied Materials, Inc. | Post preventative maintenance chamber condition monitoring and simulation |
| US12032355B2 (en) | 2022-03-31 | 2024-07-09 | Tokyo Electron Limited | Virtual metrology model based seasoning optimization |
| US12386342B2 (en) * | 2022-05-11 | 2025-08-12 | Applied Materials, Inc. | Holistic analysis of multidimensional sensor data for substrate processing equipment |
| US20250038053A1 (en) * | 2023-07-28 | 2025-01-30 | Applied Materials, Inc. | Growth chamber smart seasoning |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050146709A1 (en) * | 2002-08-13 | 2005-07-07 | Tokyo Electron Limited | Plasma processing method and plasma processing apparatus |
| US20060151429A1 (en) * | 2005-01-11 | 2006-07-13 | Hiroyuki Kitsunai | Plasma processing method |
| US20100332010A1 (en) * | 2009-06-30 | 2010-12-30 | Brian Choi | Seasoning plasma processing systems |
| US20120041584A1 (en) * | 2007-07-24 | 2012-02-16 | Dms Co. Ltd. | Endpoint detection device for realizing real-time control of plasma reactor, plasma reactor with endpoint detection device, and endpoint detection method |
| US20150020970A1 (en) * | 2006-05-31 | 2015-01-22 | Hitachi High-Technologies Corporation | Plasma processing method and apparatus |
Family Cites Families (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5963840A (en) | 1996-11-13 | 1999-10-05 | Applied Materials, Inc. | Methods for depositing premetal dielectric layer at sub-atmospheric and high temperature conditions |
| US6081334A (en) | 1998-04-17 | 2000-06-27 | Applied Materials, Inc | Endpoint detection for semiconductor processes |
| KR100695582B1 (en) * | 1998-07-10 | 2007-03-14 | 어플라이드 머티어리얼스, 인코포레이티드 | Endpoint detection method and apparatus in substrate manufacturing process |
| US6745095B1 (en) | 2000-10-04 | 2004-06-01 | Applied Materials, Inc. | Detection of process endpoint through monitoring fluctuation of output data |
| JP2003197609A (en) * | 2001-12-27 | 2003-07-11 | Tokyo Electron Ltd | Monitoring method of plasma processing apparatus and plasma processing apparatus |
| JP4173311B2 (en) * | 2002-03-12 | 2008-10-29 | 東京エレクトロン株式会社 | Seasoning completion detection method, plasma processing method, and plasma processing apparatus |
| TWI328164B (en) * | 2002-05-29 | 2010-08-01 | Tokyo Electron Ltd | Method and apparatus for monitoring tool performance |
| KR100628392B1 (en) * | 2002-06-05 | 2006-09-26 | 동경 엘렉트론 주식회사 | Multivariate analysis model formula creation method of processing unit, multivariate analysis method for processing unit, control unit of processing unit, control system of processing unit |
| AU2003251542A1 (en) | 2002-07-03 | 2004-01-23 | Tokyo Electron Limited | Method for dynamic sensor configuration and runtime execution |
| JP4685446B2 (en) * | 2002-08-20 | 2011-05-18 | 東京エレクトロン株式会社 | How to process data based on the data context |
| EP1546827A1 (en) * | 2002-09-30 | 2005-06-29 | Tokyo Electron Limited | Method and apparatus for the monitoring and control of a semiconductor manufacturing process |
| TWI260685B (en) * | 2005-03-25 | 2006-08-21 | Adaptive Plasma Tech Corp | Method and apparatus for seasoning semiconductor apparatus of sensing plasma equipment |
| US7662646B2 (en) * | 2006-03-17 | 2010-02-16 | Tokyo Electron Limited | Plasma processing method and plasma processing apparatus for performing accurate end point detection |
| KR100835379B1 (en) * | 2006-12-07 | 2008-06-04 | 한국전자통신연구원 | Chamber condition monitoring method using quadrupole mass spectrometer |
| WO2008137544A1 (en) * | 2007-05-02 | 2008-11-13 | Mks Instruments, Inc. | Automated model building and model updating |
| JP2010165738A (en) * | 2009-01-13 | 2010-07-29 | Hitachi High-Technologies Corp | Method for seasoning plasma processing apparatus, and method for determining end point of seasoning |
| CN102725835A (en) * | 2010-03-31 | 2012-10-10 | 东京毅力科创株式会社 | Plasma nitridization method |
| WO2013106171A1 (en) * | 2012-01-09 | 2013-07-18 | Applied Materials, Inc. | Method for seasoning uv chamber optical components to avoid degradation |
| KR101529827B1 (en) * | 2014-06-16 | 2015-06-17 | 성균관대학교산학협력단 | Method for detecting endpoint of plasma etching |
| JP2017045849A (en) * | 2015-08-26 | 2017-03-02 | 東京エレクトロン株式会社 | Seasoning method and etching method |
| US10008366B2 (en) * | 2015-09-08 | 2018-06-26 | Applied Materials, Inc. | Seasoning process for establishing a stable process and extending chamber uptime for semiconductor chip processing |
| US9972478B2 (en) * | 2016-09-16 | 2018-05-15 | Lam Research Corporation | Method and process of implementing machine learning in complex multivariate wafer processing equipment |
| KR102648517B1 (en) * | 2018-03-20 | 2024-03-15 | 도쿄엘렉트론가부시키가이샤 | Self-aware and compensating heterogeneous platform including integrated semiconductor process module, and method for using the same |
| SG11202009105YA (en) * | 2018-03-20 | 2020-10-29 | Tokyo Electron Ltd | Self-aware and correcting heterogenous platform incorporating integrated semiconductor processing modules and method for using same |
-
2019
- 2019-05-03 US US16/403,104 patent/US10896833B2/en active Active
- 2019-05-07 CN CN201980028383.4A patent/CN112041976B/en active Active
- 2019-05-07 WO PCT/US2019/031007 patent/WO2019217348A1/en not_active Ceased
- 2019-05-07 KR KR1020207035186A patent/KR102477573B1/en active Active
- 2019-05-07 JP JP2020563549A patent/JP7141471B2/en active Active
- 2019-05-09 TW TW108115974A patent/TWI834662B/en active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050146709A1 (en) * | 2002-08-13 | 2005-07-07 | Tokyo Electron Limited | Plasma processing method and plasma processing apparatus |
| US20060151429A1 (en) * | 2005-01-11 | 2006-07-13 | Hiroyuki Kitsunai | Plasma processing method |
| US20150020970A1 (en) * | 2006-05-31 | 2015-01-22 | Hitachi High-Technologies Corporation | Plasma processing method and apparatus |
| US20120041584A1 (en) * | 2007-07-24 | 2012-02-16 | Dms Co. Ltd. | Endpoint detection device for realizing real-time control of plasma reactor, plasma reactor with endpoint detection device, and endpoint detection method |
| US20100332010A1 (en) * | 2009-06-30 | 2010-12-30 | Brian Choi | Seasoning plasma processing systems |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US12237158B2 (en) | 2020-11-24 | 2025-02-25 | Applied Materials, Inc. | Etch feedback for control of upstream process |
| JP2024503282A (en) * | 2021-01-06 | 2024-01-25 | アプライド マテリアルズ インコーポレイテッド | Autonomous substrate processing system |
| JP7532671B2 (en) | 2021-01-06 | 2024-08-13 | アプライド マテリアルズ インコーポレイテッド | Autonomous Substrate Processing System |
| US12265377B2 (en) | 2021-01-06 | 2025-04-01 | Applied Materials, Inc. | Autonomous substrate processing system |
Also Published As
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| CN112041976B (en) | 2025-02-25 |
| KR20200141527A (en) | 2020-12-18 |
| JP7141471B2 (en) | 2022-09-22 |
| CN112041976A (en) | 2020-12-04 |
| KR102477573B1 (en) | 2022-12-13 |
| JP2021521652A (en) | 2021-08-26 |
| US10896833B2 (en) | 2021-01-19 |
| US20190348312A1 (en) | 2019-11-14 |
| TWI834662B (en) | 2024-03-11 |
| TW202004937A (en) | 2020-01-16 |
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