WO2019214255A1 - Method for detecting position of sensor crystal in vapor deposition device, vapor deposition method, and related device - Google Patents

Method for detecting position of sensor crystal in vapor deposition device, vapor deposition method, and related device Download PDF

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Publication number
WO2019214255A1
WO2019214255A1 PCT/CN2018/124441 CN2018124441W WO2019214255A1 WO 2019214255 A1 WO2019214255 A1 WO 2019214255A1 CN 2018124441 W CN2018124441 W CN 2018124441W WO 2019214255 A1 WO2019214255 A1 WO 2019214255A1
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Prior art keywords
crystal
detecting
center
capacitor
metal electrode
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PCT/CN2018/124441
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French (fr)
Chinese (zh)
Inventor
白玉庭
张超
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京东方科技集团股份有限公司
鄂尔多斯市源盛光电有限责任公司
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Publication of WO2019214255A1 publication Critical patent/WO2019214255A1/en

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    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54Controlling or regulating the coating process
    • C23C14/542Controlling the film thickness or evaporation rate
    • C23C14/545Controlling the film thickness or evaporation rate using measurement on deposited material
    • C23C14/546Controlling the film thickness or evaporation rate using measurement on deposited material using crystal oscillators
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24Vacuum evaporation

Definitions

  • the present disclosure relates to the field of display technologies, and in particular, to a method for detecting a position of a crystal oscillator in an evaporation device, an evaporation method, and related devices.
  • the crystal oscillator in the evaporation equipment is used to monitor the evaporation rate in real time, so as to ensure the film thickness of each organic layer is controlled within the error range (Spec) Inside.
  • the crystal oscillator itself vibrates or the motor rotates abnormally, which causes the crystal oscillator to deviate from the center of the detection hole, causing abnormal fluctuation of the vapor deposition rate, which not only affects the production capacity, but also reduces the yield of the product in severe cases.
  • each of the metal electrode plates are not parallel to each other, and each of the metal electrode plates forms a capacitor with a crystal oscillator plate located at a center of the detecting hole;
  • each of the sensors is in one-to-one correspondence with each of the capacitors, and the sensors are respectively connected to a crystal plate and a metal electrode plate forming the capacitor through wires;
  • a processor the processor being connected to each of the sensors, configured to determine, according to a capacitance value of the capacitor detected by the sensor, whether an abnormality occurs in a position of the crystal oscillator relative to a center of the detecting hole; When an abnormality occurs, the abnormal crystal piece is replaced.
  • four identical metal electrode plates are respectively located around the crystal oscillation plate, and four capacitors are formed with the crystal oscillation plate.
  • the wire is connected to a center of the crystal piece.
  • the processor is specifically configured to detect an initial capacitance value of each of the capacitors, and determine a capacitance value of the capacitor that is detected by the sensor and the initial capacitance value. Whether the difference between the difference is out of the set range; if so, determining that the position of the crystal piece relative to the center of the detecting hole is abnormal; if not, determining that the position of the crystal piece relative to the center of the detecting hole is normal .
  • the processor is specifically configured to determine whether a difference between the capacitance values of the two metal electrode plates that are opposite in position and the capacitor formed by the crystal oscillator plate exceeds a set range; If yes, it is determined that the position of the crystal piece relative to the center of the detecting hole is abnormal; if not, the position of the crystal piece with respect to the center of the detecting hole is determined to be normal.
  • a method for detecting a position of a crystal oscillator in an evaporation device includes:
  • the capacitance values of the capacitors formed by the metal electrode plates and the crystal oscillator pieces are detected in real time;
  • the abnormal crystal piece is replaced.
  • the real-time detecting the capacitance value of the capacitor formed by the metal electrode plate and the crystal oscillator piece respectively includes:
  • a capacitance value of the capacitor is detected by a sensor connected to each of the capacitors.
  • the method before detecting the capacitance value of the capacitor formed by the metal electrode plate and the crystal oscillator piece in real time, the method further includes: detecting an initial capacitance value of each of the capacitors;
  • Determining, according to the detected capacitance value of the capacitor, whether the position of the crystal oscillator relative to the center of the detecting hole is abnormal specifically:
  • four identical metal electrode plates are respectively located around the crystal oscillation plate, and four capacitors are formed with the crystal oscillation plate;
  • Determining, according to the detected capacitance value of the capacitor, whether the position of the crystal oscillator relative to the center of the detecting hole is abnormal specifically:
  • an embodiment of the present disclosure provides an evaporation apparatus including the above detection apparatus.
  • an evaporation method provided by an embodiment of the present disclosure includes:
  • FIG. 1 is a schematic structural view of a device for detecting a position of a crystal oscillator in an evaporation device according to an embodiment of the present disclosure
  • FIG. 2 is another schematic structural diagram of a device for detecting a position of a crystal oscillator in an evaporation device according to an embodiment of the present disclosure
  • FIG. 3 is a schematic structural diagram of a crystal oscillator in an evaporation device according to an embodiment of the present disclosure
  • FIG. 4 is a flow chart of a method for detecting a position of a crystal oscillator in an evaporation device according to an embodiment of the present disclosure.
  • the apparatus for detecting the position of the crystal oscillator in the vapor deposition apparatus provided by the embodiment of the present disclosure, as shown in FIG. 1 and FIG. 2, specifically includes:
  • each of the metal electrode plates are not parallel to each other, and each of the metal electrode plates 100 forms a capacitor C (1, 2, 3 or 4) with the crystal piece 200 located at the center of the detecting hole A;
  • each sensor S is in one-to-one correspondence with each capacitor C, and the sensor S is respectively connected to the crystal plate 200 and the metal electrode plate 100 forming the capacitor C (1, 2, 3 or 4) through the wire 300;
  • a processor (not shown) connected to each sensor S for determining the crystal plate 200 relative to the detection hole A based on the capacitance value of the capacitor C (1, 2, 3 or 4) detected by the sensor S Whether the position of the center is abnormal; when it is determined that an abnormality has occurred, the abnormal crystal piece 200 is replaced.
  • the detecting device for the position of the crystal oscillator in the vapor deposition device provided by the embodiment of the present disclosure, at least two metal electrode plates that are not parallel to each other are disposed, and each of the metal electrode plates and the crystal plate at the center of the detecting hole are respectively The capacitor is formed, so that the positional information of the crystal oscillator piece can be monitored in real time by detecting the capacitance value of the capacitor formed by the crystal oscillator plate and the metal electrode plate, so that the crystal oscillator piece with abnormal position can be replaced in time to avoid steaming due to the deviation of the crystal oscillator piece from the center of the detection hole. Abnormal fluctuations in plating rate can increase productivity and product yield.
  • each metal electrode plate may be located in the same plane or in different planes, and the metal electrode plate may be in the same plane as the crystal oscillator piece, or may be slightly deviated from the plane of the crystal oscillator piece, as long as the metal electrode plate It is only necessary to form a capacitor with the crystal piece, and the specific position of each metal plate is not limited here.
  • the metal electrode plate 100 and the sensor S are in one-to-one correspondence.
  • One end of one wire 300 may be fixedly connected to each metal electrode plate 100, and the other end of the wire 300 is connected to a sensor S.
  • the crystal oscillator 200 generally consists of a plurality of laminated film layers.
  • the gold-plated (silver) electrode 01, the first chromium adhesive layer 02, the quartz crystal 03, and the second chromium are sequentially arranged from top to bottom.
  • Adhesive layer 04 and gold-plated (silver) pattern electrode 05 are sequentially arranged from top to bottom.
  • the gold-plated (silver) electrode 01 and the gold-plated (silver) pattern electrode 05 are both conductive electrodes, and therefore, one end of the wire 300 can be connected to one of them, and the other end of the wire 300 is connected to the sensor S.
  • four identical metal electrode plates 100 may be respectively disposed around the crystal oscillation plate 200 and form four capacitors C with the crystal oscillation plate 200 .
  • four identical metal electrode plates 100 can be divided into two groups, each group comprising two metal electrode plates 100 parallel to each other. As shown in FIG. 1, the two groups are respectively placed in four directions of front, rear, left and right, in the x direction.
  • the crystal oscillation plate 200 forms two capacitors C1 and C2, and two capacitors C3 and C4 are formed in the y direction, and the x direction and the y direction are perpendicular to each other.
  • each set of the metal electrode plate 100 and the crystal oscillation piece 200 can be adjusted to form a capacitor C (1, 2, 3 or 4) having the same capacitance value, so as to facilitate the capacitor C according to the detection in the subsequent steps.
  • the capacitance value of 2, 3 or 4) can quickly and accurately determine whether the position of the crystal oscillator 200 is abnormal and make a quick response.
  • two mutually non-parallel metal electrode plates 100 are used to form a capacitor with the crystal piece 200 located at the center of the detecting hole A; for example; Capacitors C1 and C3 may be formed respectively with the crystal plate 200 in the x direction and the y direction by using two mutually non-parallel metal electrode plates 100, and the x direction and the y direction may be perpendicular to each other or may not be perpendicular, as long as the x direction and the y direction. Not parallel.
  • the displacement of the crystal oscillation plate 200 in these two directions can be monitored by the capacitors C1 and C2 formed in two different directions, and it is judged whether or not the position thereof is abnormally required to be replaced.
  • a plurality of capacitors C1, C2, ... can be formed by using more than two metal electrode plates 100 and the crystal oscillator 200, thereby monitoring the displacement of the crystal oscillator 200 in a plurality of directions, which is not limited herein.
  • the wire 300 may be connected to the center of the crystal oscillator 200.
  • the crystal oscillator 200 is generally circular, so that as shown in FIGS. 1 and 2, the wire 300 can be connected to the center of the crystal plate 200 so as to be formed with each of the metal electrode plates 100. Capacitors with the same capacitance value.
  • the foregoing detecting apparatus further includes a processor, which may be specifically configured to detect an initial capacitance value of each capacitor C (1, 2, 3, or 4); and determine that the sensor S is detected this time. Whether the difference between the capacitance value of the capacitor C (1, 2, 3 or 4) and the initial capacitance value exceeds the set range; if so, it is determined that the position of the crystal oscillation piece 200 with respect to the center of the detection hole A is abnormal; Then, it is determined that the position of the crystal oscillation piece 200 with respect to the center of the detection hole A is normal.
  • a processor which may be specifically configured to detect an initial capacitance value of each capacitor C (1, 2, 3, or 4); and determine that the sensor S is detected this time. Whether the difference between the capacitance value of the capacitor C (1, 2, 3 or 4) and the initial capacitance value exceeds the set range; if so, it is determined that the position of the crystal oscillation piece 200 with respect to the center of the detection hole A is abnormal; Then, it is determined that the position
  • the position of the crystal oscillator is considered to occur.
  • the position of the crystal oscillator can be quickly detected and feedback can be made by the above method.
  • the above detecting apparatus provided by the embodiment of the present disclosure, four identical metal electrode plates 100 are respectively placed around the crystal oscillation plate 200, and four capacitors C (1, 2, 3 or 4 are formed with the crystal oscillation plate).
  • the processor is specifically used to determine whether the difference between the capacitance values of the capacitors C (1, 2, 3 or 4) formed by the two metal electrode plates 100 and the crystal oscillation plate 200 in the opposite position exceeds the set range If so, it is determined that the position of the crystal oscillation piece 200 with respect to the center of the detection hole A is abnormal; if not, it is determined that the position of the crystal oscillation piece 200 with respect to the center of the detection hole A is normal.
  • the difference between the capacitance values of the capacitors formed by the two metal electrode plates and the crystal oscillator plates is compared with the preset range, and at least any difference is determined to exceed the preset range, and the crystal oscillator is considered to be An abnormality occurs in the position.
  • the position of the crystal oscillator can be quickly detected and feedback can be made.
  • an embodiment of the present disclosure further provides a method for detecting a position of a crystal oscillator in an evaporation device, which is implemented by using the above detection device, and the principle of solving the problem by the detection method is the same as in the foregoing evaporation device.
  • the detecting device of the position of the crystal oscillator is similar, so the implementation of the detecting method can be referred to the implementation of the detecting device, and the repeated description will not be repeated.
  • the method for detecting the position of the crystal oscillator in the vapor deposition apparatus may include the following steps:
  • the detected capacitance value of the capacitor it is determined whether an abnormality occurs in the position of the crystal oscillation plate with respect to the center of the detection hole; when it is determined that an abnormality occurs, the abnormal crystal oscillation piece is replaced.
  • the position information of the crystal oscillator can be monitored in real time, thereby The crystal plate with abnormal position is replaced in time to avoid abnormal fluctuation of the evaporation rate due to the deviation of the crystal plate from the center of the detection hole, which can improve the productivity and product yield.
  • the crystal oscillator piece can be placed in the evaporation chamber of the vapor deposition apparatus, and during the evaporation process, the surface of the crystal oscillator sheet is vapor-deposited with a layer of vapor deposition material, along with the crystal oscillator.
  • the thickness of the vapor deposition material on the surface of the sheet increases, and the vibration frequency of the crystal oscillator sheet gradually decreases.
  • the thickness of the vapor deposition material on the surface of the crystal oscillator sheet can be indirectly obtained, thereby obtaining an organic electroluminescence display panel. The rate of evaporation.
  • a plurality of crystal oscillator pieces are generally disposed in the vapor deposition apparatus, and only one crystal oscillator piece is located at the center of the detection hole in the vapor deposition process, and the crystal oscillator located at the center of the detection hole
  • the positional relationship with the center of the detecting hole affects the vapor deposition rate of the detection, and other crystal oscillators serve as the spare crystal oscillator.
  • the position between the crystal piece located at the center of the detecting hole and the center of the detecting hole is generally checked. Whether the relationship is acceptable, that is, whether the crystal oscillator is located at the center of the detecting hole before the operation of the crystal oscillator, and after determining the initial position of the crystal oscillator, the above-mentioned detecting method provided by the embodiment of the present disclosure may be performed.
  • At least two non-parallel metal electrode plates are used to form a capacitor with the crystal oscillator plate located at the center of the detecting hole, which can be implemented in the following manner:
  • the above four identical metal electrodes can be uniformly placed around the crystal oscillator piece.
  • four identical metal electrode plates 100 can be divided into two groups, each group including two parallel to each other.
  • the metal electrode plate 100 is respectively placed in four directions of front, rear, left and right, two capacitors C1 and C2 are formed in the x direction with the crystal oscillation piece 200, and two capacitors C3 and C4 are formed in the y direction, and the x direction and the y direction are perpendicular to each other. .
  • the four capacitors C formed in the x direction and the y direction it is possible to detect a positional abnormality in the x direction and the y direction with respect to the center of the detection hole A, that is, an abnormality in a position in either direction in both directions, That is, it is confirmed that the position of the crystal oscillation piece 200 is abnormal and needs to be replaced in time.
  • each set of the metal electrode plate 100 and the crystal oscillation piece 200 can be adjusted to form a capacitor C having the same capacitance value.
  • the metal electrode plate 100 on the left side and the metal electrode plate 100 on the right side can be adjusted in FIG.
  • the position of the crystal oscillation piece 200 at the center of the detection hole is located at the middle of the metal electrode plate 100.
  • the capacitance values of the capacitor C1 and the capacitor C2 should be equal in principle, and thus, The difference between the capacitance value C1 and the capacitance value C2 is determined to determine whether the crystal oscillation piece 200 deviates from the center of the detection hole, so that the position of the crystal oscillation piece 200 can be quickly and accurately determined according to the detected capacitance value of the capacitor C in the subsequent step. An exception occurs and a quick response is made.
  • using at least two non-parallel metal electrode plates to form a capacitor with the crystal plate located at the center of the detecting hole may also be implemented in the following manner:
  • Two mutually non-parallel metal electrode plates are used to form a capacitor with a crystal piece located at the center of the detecting hole; for example, as shown in FIG. 2, two mutually non-parallel metal electrode plates 100 may be used in the x direction and the y direction with the crystal oscillator.
  • the sheets 200 form capacitors C1 and C3, respectively, and the x direction and the y direction may or may not be perpendicular to each other as long as the x direction and the y direction are not parallel.
  • the displacement of the crystal oscillation plate 200 in these two directions can be monitored by the capacitors C1 and C3 formed in two different directions, thereby judging whether the crystal oscillation piece 200 deviates from the center of the detection hole, and judging whether its position is abnormal or not needs to be replaced.
  • a plurality of capacitors C may be formed by using more than two metal electrode plates 100 and the crystal oscillator 200 to monitor the displacement of the crystal oscillator 200 in multiple directions, which is not limited herein.
  • the capacitance value of the capacitor formed by the real-time detecting metal electrode plate and the crystal oscillator piece may be specifically implemented in the following manner:
  • the capacitance of the capacitor is detected by a sensor connected to each capacitor.
  • the metal electrode plate 100 and the sensor S are in one-to-one correspondence.
  • One end of one wire 300 may be fixedly connected to each metal electrode plate 100, and the other end of the wire 300 is connected to a sensor S.
  • the crystal oscillator 200 generally consists of a plurality of laminated film layers.
  • the gold-plated (silver) electrode 01, the first chromium adhesive layer 02, the quartz crystal 03, and the second chromium are sequentially arranged from top to bottom.
  • Adhesive layer 04 and gold-plated (silver) pattern electrode 05 are sequentially arranged from top to bottom.
  • the gold-plated (silver) electrode 01 and the gold-plated (silver) pattern electrode 05 are both conductive electrodes, and therefore, one end of the wire 300 can be connected to one of them, and the other end of the wire 300 is connected to the sensor S.
  • the sensor S may be an instrument capable of measuring a capacitance value, such as a capacitive sensor or a multimeter, and is not limited herein.
  • a wire may be connected to the center of the crystal oscillator.
  • the crystal oscillator 200 is generally circular, so that as shown in FIGS. 1 and 2, the wire 300 can be connected to the center of the crystal plate 200 so as to be formed with each of the metal electrode plates 100. Capacitors with the same capacitance value.
  • the crystal oscillator 200 may have other shapes, which are not limited herein.
  • determining whether an abnormality occurs in a position of the crystal oscillator piece relative to the center of the detecting hole according to the detected capacitance value of the capacitor may be performed according to a capacitance value of the capacitor in various manners. Determine if the position of the crystal oscillator is abnormal.
  • the capacitance value of the detected capacitor can be compared with the initial capacitance value to determine whether the position of the crystal oscillation plate is abnormal.
  • the method may further include: detecting an initial capacitance value of each capacitor; that is, when the position of the crystal oscillation plate is not abnormal, the capacitance value of each capacitor is recorded as an initial capacitance value.
  • determining whether the position of the crystal oscillator relative to the center of the detecting hole is abnormal according to the capacitance value of the detected capacitor may specifically include:
  • the position of the crystal oscillator is considered to occur.
  • the position of the crystal oscillator can be quickly detected and feedback can be made by the above method.
  • the crystal oscillation piece 200 is placed at the center of the detection hole, and a metal electrode plate 100 is placed on the left side of the crystal oscillation plate 200 to constitute a capacitor C1, and a rear side of the crystal oscillation piece 200 is placed.
  • the metal electrode plate 100 is configured to constitute a capacitor C3.
  • the metal electrode plate 100 and the crystal oscillation plate 200 constituting each capacitor are respectively connected to the corresponding sensor S through the wire 300, and the initial capacitance values of the capacitor C1 and the capacitor C2 are respectively detected before the crystal oscillation piece 200 operates.
  • the capacitance values of the capacitor C1 and the capacitor C2 are detected in real time, and the difference between the capacitance values of the capacitor C1 and the capacitor C2 and the corresponding initial capacitance value is monitored, if one capacitor exists in the capacitor C1 and the capacitor C2 If the difference between the capacitance value and the initial capacitance value exceeds the set range, it is determined that the position of the crystal oscillation piece 200 with respect to the center of the detection hole is abnormal, so that the crystal oscillation piece can be replaced in time.
  • the specific value of the set range may be determined according to the capacitance value of the capacitor formed by the metal electrode plate 100 and the crystal oscillator 200, and the deviation of the allowable capacitance value, for example, the capacitance value is approximately 100 ⁇ F, and the allowable capacitance value is If the deviation occurs in the range of 0 to 5%, the setting range can be set to 0 to 5 ⁇ F. This is only an example, and the capacitance value and setting range are not limited.
  • the capacitance value of the capacitor to be determined to determine whether the position of the crystal oscillator relative to the center of the detecting hole is abnormal may specifically include:
  • the difference between the capacitance values of the capacitors formed by the two metal electrode plates and the crystal oscillator plates is compared with the preset range, and at least any difference is determined to exceed the preset range, and the crystal oscillator is considered to be An abnormality occurs in the position.
  • the position of the crystal oscillator can be quickly detected and feedback can be made.
  • the crystal oscillation piece 200 is placed at the center of the detection hole, and a metal electrode plate 100 is placed around the crystal oscillation piece 200.
  • the metal electrode plate 100 can be placed before and after the crystal oscillation plate 200.
  • the metal electrode plate 100 and the crystal oscillation plate 200 constituting each capacitor are respectively connected to the corresponding sensor S through the wire 300, and the capacitance values of the respective capacitors (C1, C2, C3, and C4) are detected in real time during the operation of the crystal oscillation plate 200, and monitored.
  • the specific value of the set range may be determined according to the magnitude of the capacitance value of the capacitor formed by the metal electrode plate 100 and the crystal oscillation plate 200, and the deviation of the allowable capacitance value.
  • the specific values of the capacitance value and the setting range are not limited.
  • an embodiment of the present disclosure further provides an evaporation apparatus, including the above detection apparatus provided by the embodiment of the present disclosure. Since the principle of solving the problem of the vapor deposition device is similar to the detection device for the position of the crystal oscillator in the vapor deposition device, the implementation of the vapor deposition device can be referred to the implementation of the detection device, and the repeated description is omitted.
  • an embodiment of the present disclosure further provides an evaporation method, including: in the process of performing material evaporation, the method for detecting the position of the crystal oscillator provided by the embodiment of the present disclosure. Since the principle of solving the problem by the vapor deposition method is similar to the method for detecting the position of the crystal oscillator in the vapor deposition apparatus, the implementation of the vapor deposition method can be referred to the implementation of the detection method, and the repeated description will not be repeated.
  • the vapor deposition method and the related device employ at least two metal electrode plates which are not parallel to each other, and form a capacitor with the crystal plate located at the center of the detection hole;
  • the capacitance value of the capacitor is detected in real time; according to the detected capacitance value of the capacitor, whether the position of the crystal oscillator piece relative to the center of the detecting hole is abnormal is determined; when it is determined that an abnormality occurs, the abnormal crystal piece is replaced.
  • the position information of the crystal oscillator piece can be monitored in real time, so that the crystal oscillator piece with abnormal position can be replaced in time to avoid the deviation detection of the crystal oscillator piece.
  • the center of the hole causes abnormal fluctuations in the vapor deposition rate, which can increase productivity and product yield.

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Abstract

A device for detecting the position of a sensor crystal (200) in a vapor deposition device, comprising: at least two metal electrode plates (100), the metal electrode plates (100) being non-parallel, and each metal electrode plate (100) separately forming a capacitor (C, C1, C2, C3, C4) with the sensor crystal (200) positioned in the center of a detection aperture (A); sensors (S), the sensors (S) corresponding one-to-one with the capacitors (C, C1, C2, C3, C4), and being separately connected to the sensor crystal (200) and the metal electrode plates (100) of the capacitors (C, C1, C2, C3, C4) by means of wires (300); a processor, the processor being connected to the sensors (S) and used to determine, on the basis of the capacitance value of the capacitors (C, C1, C2, C3, C4) detected by the sensors (S), whether the position of the sensor crystal (200) relative to the center of the detection aperture (A) is abnormal. When it is determined that such an abnormality has occurred, the abnormal sensor crystal (200) is replaced. Further disclosed are a method employing the device to detect the position of a sensor crystal (200) in a vapor deposition device, a vapor deposition device, and a vapor deposition method.

Description

蒸镀设备中晶振片位置的检测方法、蒸镀方法及相关装置Method for detecting position of crystal oscillator in vapor deposition equipment, vapor deposition method and related device
本申请要求在2018年5月10日提交中国专利局、申请号为201810442144.0、发明名称为“蒸镀设备中晶振片位置的检测方法、蒸镀方法及相关装置”的中国专利申请的优先权,其全部内容以引入的方式并入本申请中。This application claims priority to the Chinese Patent Application filed on May 10, 2018, the Chinese Patent Office, Application No. 201810442144.0, entitled "Detection Method of Crystal Oxygen Sheet Position in Evaporation Equipment, Evaporation Method and Related Devices", The entire content of this application is incorporated herein by reference.
技术领域Technical field
本公开涉及显示技术领域,尤其涉及一种蒸镀设备中晶振片位置的检测方法、蒸镀方法及相关装置。The present disclosure relates to the field of display technologies, and in particular, to a method for detecting a position of a crystal oscillator in an evaporation device, an evaporation method, and related devices.
背景技术Background technique
在有机电致发光显示面板(OLED,Organic Light-Emitting Diode)的生产线中,蒸镀设备中的晶振片用来实时监控蒸镀速率,从而保证各有机层的膜厚控制在误差范围(Spec)内。在晶振片工作过程中,由于晶振片本身振动或电机转动异常,导致晶振片偏离检测孔中心,引起蒸镀速率异常波动时有发生,不仅影响到了产能,严重时降低了产品的良率。In the production line of Organic Light-Emitting Diode (OLED), the crystal oscillator in the evaporation equipment is used to monitor the evaporation rate in real time, so as to ensure the film thickness of each organic layer is controlled within the error range (Spec) Inside. During the working of the crystal oscillator, the crystal oscillator itself vibrates or the motor rotates abnormally, which causes the crystal oscillator to deviate from the center of the detection hole, causing abnormal fluctuation of the vapor deposition rate, which not only affects the production capacity, but also reduces the yield of the product in severe cases.
发明内容Summary of the invention
本公开实施例提供的一种蒸镀设备中晶振片位置的检测装置,其中,包括:The apparatus for detecting the position of a crystal oscillator in an evaporation apparatus provided by the embodiment of the present disclosure includes:
至少两个金属电极板,各所述金属电极板之间互不平行,各所述金属电极板分别与位于检测孔中心的晶振片形成电容器;At least two metal electrode plates, each of the metal electrode plates are not parallel to each other, and each of the metal electrode plates forms a capacitor with a crystal oscillator plate located at a center of the detecting hole;
传感器,各所述传感器与各所述电容器一一对应,所述传感器通过导线分别与形成所述电容器的晶振片和金属电极板连接;a sensor, each of the sensors is in one-to-one correspondence with each of the capacitors, and the sensors are respectively connected to a crystal plate and a metal electrode plate forming the capacitor through wires;
处理器,所述处理器与各所述传感器连接,用于根据所述传感器检测到的所述电容器的电容值,确定所述晶振片相对于所述检测孔中心的位置是否 发生异常;在确定发生异常时,更换异常的所述晶振片。a processor, the processor being connected to each of the sensors, configured to determine, according to a capacitance value of the capacitor detected by the sensor, whether an abnormality occurs in a position of the crystal oscillator relative to a center of the detecting hole; When an abnormality occurs, the abnormal crystal piece is replaced.
可选地,在本公开实施例中,四个相同的金属电极板分别位于所述晶振片的四周,且与所述晶振片形成四个电容器。Optionally, in the embodiment of the present disclosure, four identical metal electrode plates are respectively located around the crystal oscillation plate, and four capacitors are formed with the crystal oscillation plate.
可选地,在本公开实施例中,所述导线连接至所述晶振片的中心处。Optionally, in an embodiment of the present disclosure, the wire is connected to a center of the crystal piece.
可选地,在本公开实施例中,所述处理器,具体用于检测各所述电容器的初始电容值,确定所述传感器本次检测到的所述电容器的电容值与所述初始电容值之间的差值是否超出设定范围;若是,则确定所述晶振片相对于所述检测孔中心的位置发生异常;若否,则确定所述晶振片相对于所述检测孔中心的位置正常。Optionally, in the embodiment of the present disclosure, the processor is specifically configured to detect an initial capacitance value of each of the capacitors, and determine a capacitance value of the capacitor that is detected by the sensor and the initial capacitance value. Whether the difference between the difference is out of the set range; if so, determining that the position of the crystal piece relative to the center of the detecting hole is abnormal; if not, determining that the position of the crystal piece relative to the center of the detecting hole is normal .
可选地,在本公开实施例中,所述处理器,具体用于确定位置相对的两个金属电极板与所述晶振片形成的电容器的电容值之间的差值是否超出设定范围;若是,则确定所述晶振片相对于所述检测孔中心的位置发生异常;若否,则确定所述晶振片相对于所述检测孔中心的位置正常。Optionally, in the embodiment of the present disclosure, the processor is specifically configured to determine whether a difference between the capacitance values of the two metal electrode plates that are opposite in position and the capacitor formed by the crystal oscillator plate exceeds a set range; If yes, it is determined that the position of the crystal piece relative to the center of the detecting hole is abnormal; if not, the position of the crystal piece with respect to the center of the detecting hole is determined to be normal.
相应地,本公开实施例提供的一种蒸镀设备中晶振片位置的检测方法,其中,所述检测方法采用上述检测装置实现,包括:Correspondingly, a method for detecting a position of a crystal oscillator in an evaporation device according to an embodiment of the present disclosure, wherein the detecting method is implemented by using the detecting device, includes:
在晶振片工作时,实时检测金属电极板分别与所述晶振片形成的电容器的电容值;During the operation of the crystal oscillator, the capacitance values of the capacitors formed by the metal electrode plates and the crystal oscillator pieces are detected in real time;
根据检测到的所述电容器的电容值,确定所述晶振片相对于所述检测孔中心的位置是否发生异常;Determining, according to the detected capacitance value of the capacitor, whether the position of the crystal oscillator relative to the center of the detecting hole is abnormal;
在确定发生异常时,更换异常的所述晶振片。When it is determined that an abnormality has occurred, the abnormal crystal piece is replaced.
可选地,在本公开实施例中,所述实时检测金属电极板分别与所述晶振片形成的电容器的电容值,具体包括:Optionally, in the embodiment of the present disclosure, the real-time detecting the capacitance value of the capacitor formed by the metal electrode plate and the crystal oscillator piece respectively includes:
通过各所述电容器连接的传感器检测所述电容器的电容值。A capacitance value of the capacitor is detected by a sensor connected to each of the capacitors.
可选地,在本公开实施例中,在实时检测金属电极板分别与所述晶振片形成的电容器的电容值之前,还包括:检测各所述电容器的初始电容值;Optionally, in the embodiment of the present disclosure, before detecting the capacitance value of the capacitor formed by the metal electrode plate and the crystal oscillator piece in real time, the method further includes: detecting an initial capacitance value of each of the capacitors;
所述根据检测到的所述电容器的电容值,确定所述晶振片相对于所述检测孔中心的位置是否发生异常,具体包括:Determining, according to the detected capacitance value of the capacitor, whether the position of the crystal oscillator relative to the center of the detecting hole is abnormal, specifically:
判断本次检测到的所述电容器的电容值与初始电容值之间的差值是否超出设定范围;Determining whether the difference between the capacitance value of the capacitor detected this time and the initial capacitance value exceeds a set range;
若是,则确定所述晶振片相对于所述检测孔中心的位置发生异常;If yes, determining that the position of the crystal piece relative to the center of the detecting hole is abnormal;
若否,则确定所述晶振片相对于所述检测孔中心的位置正常。If not, it is determined that the position of the crystal piece relative to the center of the detecting hole is normal.
可选地,在本公开实施例中,四个相同的金属电极板分别位于所述晶振片的四周,且与所述晶振片形成四个电容器;Optionally, in the embodiment of the present disclosure, four identical metal electrode plates are respectively located around the crystal oscillation plate, and four capacitors are formed with the crystal oscillation plate;
所述根据检测到的所述电容器的电容值,确定所述晶振片相对于所述检测孔中心的位置是否发生异常,具体包括:Determining, according to the detected capacitance value of the capacitor, whether the position of the crystal oscillator relative to the center of the detecting hole is abnormal, specifically:
判断位置相对的两个金属电极板与所述晶振片形成的电容器的电容值之间的差值是否超出设定范围;Determining whether a difference between the capacitance values of the two metal electrode plates opposite to each other and the capacitor formed by the crystal oscillation plate exceeds a set range;
若是,则确定所述晶振片相对于所述检测孔中心的位置发生异常;If yes, determining that the position of the crystal piece relative to the center of the detecting hole is abnormal;
若否,则确定所述晶振片相对于所述检测孔中心的位置正常。If not, it is determined that the position of the crystal piece relative to the center of the detecting hole is normal.
相应地,本公开实施例提供的一种蒸镀设备,其中,包括上述检测装置。Correspondingly, an embodiment of the present disclosure provides an evaporation apparatus including the above detection apparatus.
相应地,本公开实施例提供的一种蒸镀方法,其中,包括:Correspondingly, an evaporation method provided by an embodiment of the present disclosure includes:
在进行材料蒸镀的过程中,采用上述晶振片位置的检测方法。In the process of material evaporation, the above-described method of detecting the position of the crystal plate is employed.
附图说明DRAWINGS
图1为本公开实施例提供的蒸镀设备中晶振片位置的检测装置的一种结构示意图;1 is a schematic structural view of a device for detecting a position of a crystal oscillator in an evaporation device according to an embodiment of the present disclosure;
图2为本公开实施例提供的蒸镀设备中晶振片位置的检测装置的另一种结构示意图;2 is another schematic structural diagram of a device for detecting a position of a crystal oscillator in an evaporation device according to an embodiment of the present disclosure;
图3为本公开实施例提供的蒸镀设备中的晶振片的结构示意图;3 is a schematic structural diagram of a crystal oscillator in an evaporation device according to an embodiment of the present disclosure;
图4为本公开实施例提供的蒸镀设备中晶振片位置的检测方法的流程图。4 is a flow chart of a method for detecting a position of a crystal oscillator in an evaporation device according to an embodiment of the present disclosure.
具体实施方式detailed description
为了使本公开的目的、技术方案和优点更加清楚,下面将结合附图对本公开作进一步地详细描述,显然,所描述的实施例仅是本公开一部分实施例, 而不是全部的实施例。基于本公开中的实施例,本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其它实施例,都属于本公开保护的范围。The present disclosure will be further described in detail with reference to the accompanying drawings, in which FIG. All other embodiments obtained by a person of ordinary skill in the art based on the embodiments of the present disclosure without departing from the inventive scope are the scope of the disclosure.
附图中各部件的形状和大小不反映真实比例,目的只是示意说明本公开内容。The shapes and sizes of the various components in the drawings do not reflect true proportions, and are merely intended to illustrate the present disclosure.
本公开实施例提供的一种蒸镀设备中晶振片位置的检测装置,如图1和图2所示,具体包括:The apparatus for detecting the position of the crystal oscillator in the vapor deposition apparatus provided by the embodiment of the present disclosure, as shown in FIG. 1 and FIG. 2, specifically includes:
至少两个金属电极板100,各金属电极板之间互不平行,各金属电极板100分别与位于检测孔A中心的晶振片200形成电容器C(1、2、3或4);At least two metal electrode plates 100, each of the metal electrode plates are not parallel to each other, and each of the metal electrode plates 100 forms a capacitor C (1, 2, 3 or 4) with the crystal piece 200 located at the center of the detecting hole A;
传感器S,各传感器S与各电容器C一一对应,传感器S通过导线300分别与形成电容器C(1、2、3或4)的晶振片200和金属电极板100连接;a sensor S, each sensor S is in one-to-one correspondence with each capacitor C, and the sensor S is respectively connected to the crystal plate 200 and the metal electrode plate 100 forming the capacitor C (1, 2, 3 or 4) through the wire 300;
处理器(图中未示出),处理器与各传感器S连接,用于根据传感器S检测到的电容器C(1、2、3或4)的电容值,确定晶振片200相对于检测孔A中心的位置是否发生异常;在确定发生异常时,更换异常的晶振片200。a processor (not shown) connected to each sensor S for determining the crystal plate 200 relative to the detection hole A based on the capacitance value of the capacitor C (1, 2, 3 or 4) detected by the sensor S Whether the position of the center is abnormal; when it is determined that an abnormality has occurred, the abnormal crystal piece 200 is replaced.
具体地,在本公开实施例提供的上述蒸镀设备中晶振片位置的检测装置中,通过设置至少两个互不平行的金属电极板,且各金属电极板分别与位于检测孔中心的晶振片形成电容器,从而可以通过检测由晶振片和金属电极板形成的电容器的电容值,实时监测晶振片的位置信息,从而可以及时更换位置异常的晶振片,避免由于晶振片偏离检测孔中心而引起蒸镀速率异常波动,可以提高产能和产品良率。Specifically, in the detecting device for the position of the crystal oscillator in the vapor deposition device provided by the embodiment of the present disclosure, at least two metal electrode plates that are not parallel to each other are disposed, and each of the metal electrode plates and the crystal plate at the center of the detecting hole are respectively The capacitor is formed, so that the positional information of the crystal oscillator piece can be monitored in real time by detecting the capacitance value of the capacitor formed by the crystal oscillator plate and the metal electrode plate, so that the crystal oscillator piece with abnormal position can be replaced in time to avoid steaming due to the deviation of the crystal oscillator piece from the center of the detection hole. Abnormal fluctuations in plating rate can increase productivity and product yield.
在具体实施时,各金属电极板可以位于同一平面内,也可以位于不同的平面内,且金属电极板可以与晶振片位于同一平面内,也可以稍微偏离晶振片所在的平面,只要金属电极板与晶振片能够构成电容器即可,此处不对各金属电极板的具体位置进行限定。In a specific implementation, each metal electrode plate may be located in the same plane or in different planes, and the metal electrode plate may be in the same plane as the crystal oscillator piece, or may be slightly deviated from the plane of the crystal oscillator piece, as long as the metal electrode plate It is only necessary to form a capacitor with the crystal piece, and the specific position of each metal plate is not limited here.
具体地,如图1和图2所示,金属电极板100和传感器S一一对应,可以在各金属电极板100上固定连接一个导线300的一端,导线300的另一端连接一传感器S。晶振片200一般由层叠的多个膜层结构组成,如图3所示,从上至下依次为镀金(银)电极01、第一铬的粘合层02、石英晶体03、第二 铬的粘合层04和镀金(银)图案电极05。可以看出镀金(银)电极01和镀金(银)图案电极05均为导电电极,因此,导线300的一端可以和其中之一连接,导线300的另一端连接传感器S。Specifically, as shown in FIG. 1 and FIG. 2, the metal electrode plate 100 and the sensor S are in one-to-one correspondence. One end of one wire 300 may be fixedly connected to each metal electrode plate 100, and the other end of the wire 300 is connected to a sensor S. The crystal oscillator 200 generally consists of a plurality of laminated film layers. As shown in FIG. 3, the gold-plated (silver) electrode 01, the first chromium adhesive layer 02, the quartz crystal 03, and the second chromium are sequentially arranged from top to bottom. Adhesive layer 04 and gold-plated (silver) pattern electrode 05. It can be seen that the gold-plated (silver) electrode 01 and the gold-plated (silver) pattern electrode 05 are both conductive electrodes, and therefore, one end of the wire 300 can be connected to one of them, and the other end of the wire 300 is connected to the sensor S.
可选地,在本公开实施例提供的上述检测装置中,如图1所示,可以采用四个相同的金属电极板100分别位于晶振片200的四周,且与晶振片200形成四个电容器C(1、2、3或4)。例如可以将四个相同的金属电极板100分成两组,每组包含相互平行的两个金属电极板100,如图1所示,分别将两组放置于前后左右四个方向,在x方向与晶振片200形成两个电容器C1和C2,在y方向形成两个电容器C3和C4,x方向和y方向相互垂直。通过形成在x方向和y方向形成的四个电容器C,可以检测晶振片200相对于检测孔A中心在x方向和y方向的偏移即位置异常,在两个方向任意一个方向的位置发生异常,即确认晶振片200的位置发生异常需及时更换。Optionally, in the above detection device provided by the embodiment of the present disclosure, as shown in FIG. 1 , four identical metal electrode plates 100 may be respectively disposed around the crystal oscillation plate 200 and form four capacitors C with the crystal oscillation plate 200 . (1, 2, 3 or 4). For example, four identical metal electrode plates 100 can be divided into two groups, each group comprising two metal electrode plates 100 parallel to each other. As shown in FIG. 1, the two groups are respectively placed in four directions of front, rear, left and right, in the x direction. The crystal oscillation plate 200 forms two capacitors C1 and C2, and two capacitors C3 and C4 are formed in the y direction, and the x direction and the y direction are perpendicular to each other. By forming the four capacitors C formed in the x direction and the y direction, it is possible to detect the positional abnormality of the crystal oscillation piece 200 in the x direction and the y direction with respect to the center of the detection hole A, that is, an abnormality occurs in any one of the directions in either direction. That is, it is confirmed that the position of the crystal oscillation piece 200 is abnormal and needs to be replaced in time.
并且,还可以调整每组金属电极板100与晶振片200的位置,使其形成电容值相同的电容器C(1、2、3或4),便于后续步骤中根据检测到的电容器C(1、2、3或4)的电容值,可以快速准确的判断晶振片200的位置是否发生异常,做出快速响应。Moreover, the position of each set of the metal electrode plate 100 and the crystal oscillation piece 200 can be adjusted to form a capacitor C (1, 2, 3 or 4) having the same capacitance value, so as to facilitate the capacitor C according to the detection in the subsequent steps. The capacitance value of 2, 3 or 4) can quickly and accurately determine whether the position of the crystal oscillator 200 is abnormal and make a quick response.
或者,可选地,在本公开实施例提供的上述检测装置中,如图2所示,采用两个互不平行的金属电极板100,与位于检测孔A中心的晶振片200形成电容器;例如,可以采用两个互不平行的金属电极板100在x方向和y方向与晶振片200分别形成电容器C1和C3,x方向和y方向可以相互垂直,也可以不垂直,只要x方向和y方向不平行即可。通过在两个不同方向形成的电容器C1和C2可以监测晶振片200在这两个方向的位移,而判断其位置是否异常需要更换。当然,可以采用多于两个金属电极板100与晶振片200形成多个电容器C1、C2……,从而监测晶振片200在多个方向的位移,在此不做限定。Alternatively, in the above detecting apparatus provided by the embodiment of the present disclosure, as shown in FIG. 2, two mutually non-parallel metal electrode plates 100 are used to form a capacitor with the crystal piece 200 located at the center of the detecting hole A; for example; Capacitors C1 and C3 may be formed respectively with the crystal plate 200 in the x direction and the y direction by using two mutually non-parallel metal electrode plates 100, and the x direction and the y direction may be perpendicular to each other or may not be perpendicular, as long as the x direction and the y direction. Not parallel. The displacement of the crystal oscillation plate 200 in these two directions can be monitored by the capacitors C1 and C2 formed in two different directions, and it is judged whether or not the position thereof is abnormally required to be replaced. Of course, a plurality of capacitors C1, C2, ... can be formed by using more than two metal electrode plates 100 and the crystal oscillator 200, thereby monitoring the displacement of the crystal oscillator 200 in a plurality of directions, which is not limited herein.
可选地,在本公开实施例提供的上述检测装置中,如图1和图2所示,导线300可以连接至晶振片200的中心处。如图3所示,可以看出,晶振片 200一般为圆形,因此如图1和图2所示,可以采用导线300连接至晶振片200的圆心处,以便可以和各金属电极板100形成电容值相同的电容器。Optionally, in the above detecting apparatus provided by the embodiment of the present disclosure, as shown in FIGS. 1 and 2, the wire 300 may be connected to the center of the crystal oscillator 200. As shown in FIG. 3, it can be seen that the crystal oscillator 200 is generally circular, so that as shown in FIGS. 1 and 2, the wire 300 can be connected to the center of the crystal plate 200 so as to be formed with each of the metal electrode plates 100. Capacitors with the same capacitance value.
可选地,在本公开实施例提供的上述检测装置中,还包括处理器,可以具体用于检测各电容器C(1、2、3或4)的初始电容值;确定传感器S本次检测到的电容器C(1、2、3或4)的电容值与初始电容值之间的差值是否超出设定范围;若是,则确定晶振片200相对于检测孔A中心的位置发生异常;若否,则确定晶振片200相对于检测孔A中心的位置正常。Optionally, the foregoing detecting apparatus provided by the embodiment of the present disclosure further includes a processor, which may be specifically configured to detect an initial capacitance value of each capacitor C (1, 2, 3, or 4); and determine that the sensor S is detected this time. Whether the difference between the capacitance value of the capacitor C (1, 2, 3 or 4) and the initial capacitance value exceeds the set range; if so, it is determined that the position of the crystal oscillation piece 200 with respect to the center of the detection hole A is abnormal; Then, it is determined that the position of the crystal oscillation piece 200 with respect to the center of the detection hole A is normal.
具体地,通过实时计算检测到的各电容值与对应的初始电容值之间的差值,并与预设范围进行比较,至少确定任意一个差值超过预设范围,则认为晶振片的位置发生异常,通过上述方式可以快速检测到晶振片的位置异常并做出反馈。Specifically, by calculating the difference between the detected capacitance values and the corresponding initial capacitance values in real time, and comparing with the preset range, and determining at least any difference exceeds the preset range, the position of the crystal oscillator is considered to occur. Abnormally, the position of the crystal oscillator can be quickly detected and feedback can be made by the above method.
可选地,在本公开实施例提供的上述检测装置中,采用四个相同的金属电极板100分别放置于晶振片200的四周,与晶振片形成四个电容器C(1、2、3或4)时,处理器,可以具体用于确定位置相对的两个金属电极板100与晶振片200形成的电容器C(1、2、3或4)的电容值之间的差值是否超出设定范围;若是,则确定晶振片200相对于检测孔A中心的位置发生异常;若否,则确定晶振片200相对于检测孔A中心的位置正常。Optionally, in the above detecting apparatus provided by the embodiment of the present disclosure, four identical metal electrode plates 100 are respectively placed around the crystal oscillation plate 200, and four capacitors C (1, 2, 3 or 4 are formed with the crystal oscillation plate). When the processor is specifically used to determine whether the difference between the capacitance values of the capacitors C (1, 2, 3 or 4) formed by the two metal electrode plates 100 and the crystal oscillation plate 200 in the opposite position exceeds the set range If so, it is determined that the position of the crystal oscillation piece 200 with respect to the center of the detection hole A is abnormal; if not, it is determined that the position of the crystal oscillation piece 200 with respect to the center of the detection hole A is normal.
具体地,采用位置相对的两个金属电极板与晶振片形成的电容器的电容值之间的差值,与预设范围进行比较,至少确定任意一个差值超过预设范围,则认为晶振片的位置发生异常,通过上述方式可以快速检测到晶振片的位置异常并做出反馈。Specifically, the difference between the capacitance values of the capacitors formed by the two metal electrode plates and the crystal oscillator plates is compared with the preset range, and at least any difference is determined to exceed the preset range, and the crystal oscillator is considered to be An abnormality occurs in the position. In the above manner, the position of the crystal oscillator can be quickly detected and feedback can be made.
基于同一发明构思,本公开实施例还提供了一种蒸镀设备中晶振片位置的检测方法,该检测方法采用上述检测装置实现,由于该检测方法解决问题的原理与前述一种蒸镀设备中晶振片位置的检测装置相似,因此该检测方法的实施可以参见检测装置的实施,重复之处不再赘述。Based on the same inventive concept, an embodiment of the present disclosure further provides a method for detecting a position of a crystal oscillator in an evaporation device, which is implemented by using the above detection device, and the principle of solving the problem by the detection method is the same as in the foregoing evaporation device. The detecting device of the position of the crystal oscillator is similar, so the implementation of the detecting method can be referred to the implementation of the detecting device, and the repeated description will not be repeated.
具体地,本公开实施例提供的一种蒸镀设备中晶振片位置的检测方法,如图4所示,可以包括以下步骤:Specifically, the method for detecting the position of the crystal oscillator in the vapor deposition apparatus provided by the embodiment of the present disclosure, as shown in FIG. 4, may include the following steps:
在晶振片工作时,实时检测金属电极板分别与晶振片形成的电容器的电容值;When the crystal oscillator is working, detecting the capacitance value of the capacitor formed by the metal electrode plate and the crystal oscillator sheet in real time;
根据检测到的电容器的电容值,确定晶振片相对于检测孔中心的位置是否发生异常;在确定发生异常时,更换异常的晶振片。According to the detected capacitance value of the capacitor, it is determined whether an abnormality occurs in the position of the crystal oscillation plate with respect to the center of the detection hole; when it is determined that an abnormality occurs, the abnormal crystal oscillation piece is replaced.
具体地,在本公开实施例提供的上述蒸镀设备中晶振片位置的检测方法中,通过检测由晶振片和金属电极板形成的电容器的电容值,可以实时监测晶振片的位置信息,从而可以及时更换位置异常的晶振片,避免由于晶振片偏离检测孔中心而引起蒸镀速率异常波动,可以提高产能和产品良率。Specifically, in the method for detecting the position of the crystal oscillator in the vapor deposition apparatus provided by the embodiment of the present disclosure, by detecting the capacitance value of the capacitor formed by the crystal oscillator and the metal electrode plate, the position information of the crystal oscillator can be monitored in real time, thereby The crystal plate with abnormal position is replaced in time to avoid abnormal fluctuation of the evaporation rate due to the deviation of the crystal plate from the center of the detection hole, which can improve the productivity and product yield.
在有机电致发光显示面板的生产过程中,可以将晶振片置于蒸镀设备的蒸镀腔室内,在蒸镀过程中,晶振片表面同时会蒸镀上一层蒸镀材料,随着晶振片表面的蒸镀材料的厚度增加,晶振片的振动频率会逐渐减弱,通过监测晶振片的振动频率,可以间接得到晶振片表面的蒸镀材料的厚度,从而可以得到对有机电致发光显示面板的蒸镀速率。In the production process of the organic electroluminescent display panel, the crystal oscillator piece can be placed in the evaporation chamber of the vapor deposition apparatus, and during the evaporation process, the surface of the crystal oscillator sheet is vapor-deposited with a layer of vapor deposition material, along with the crystal oscillator. The thickness of the vapor deposition material on the surface of the sheet increases, and the vibration frequency of the crystal oscillator sheet gradually decreases. By monitoring the vibration frequency of the crystal oscillator sheet, the thickness of the vapor deposition material on the surface of the crystal oscillator sheet can be indirectly obtained, thereby obtaining an organic electroluminescence display panel. The rate of evaporation.
具体地,在本公开实施例提供的上述检测方法中,在蒸镀设备中一般会设置有多个晶振片,在蒸镀过程中仅有一个晶振片位于检测孔中心,位于检测孔中心的晶振片作为工作的晶振片,其与检测孔中心的位置关系会影响到检测的蒸镀速率,其他晶振片作为备用晶振片。因此,在每次开腔更换晶振片后,或者,在蒸镀完成或蒸镀之前,更换位于检测孔中心的晶振片后,一般会检查位于检测孔中心的晶振片和检测孔中心之间的位置关系是否合格,即晶振片工作前是否位于检测孔中心,在确定晶振片初始位置合格后,可以执行本公开实施例提供的上述检测方法。Specifically, in the above detection method provided by the embodiment of the present disclosure, a plurality of crystal oscillator pieces are generally disposed in the vapor deposition apparatus, and only one crystal oscillator piece is located at the center of the detection hole in the vapor deposition process, and the crystal oscillator located at the center of the detection hole As a working crystal oscillator, the positional relationship with the center of the detecting hole affects the vapor deposition rate of the detection, and other crystal oscillators serve as the spare crystal oscillator. Therefore, after each replacement of the crystal piece for opening the cavity, or after replacing the crystal piece located at the center of the detecting hole before vapor deposition or evaporation, the position between the crystal piece located at the center of the detecting hole and the center of the detecting hole is generally checked. Whether the relationship is acceptable, that is, whether the crystal oscillator is located at the center of the detecting hole before the operation of the crystal oscillator, and after determining the initial position of the crystal oscillator, the above-mentioned detecting method provided by the embodiment of the present disclosure may be performed.
在具体实施时,采用至少两个互不平行的金属电极板,与位于检测孔中心的晶振片形成电容器,具体可以采用以下方式实现:In a specific implementation, at least two non-parallel metal electrode plates are used to form a capacitor with the crystal oscillator plate located at the center of the detecting hole, which can be implemented in the following manner:
采用四个相同的金属电极板分别放置于晶振片的四周,与晶振片形成四个电容器。Four identical metal electrode plates are respectively placed around the crystal plate to form four capacitors with the crystal plate.
具体地,如图1所示,可以将上述四个相同的金属电极均匀的放置于晶振片的四周,例如可以将四个相同的金属电极板100分成两组,每组包含相 互平行的两个金属电极板100,分别将两组放置于前后左右四个方向,在x方向与晶振片200形成两个电容器C1和C2,在y方向形成两个电容器C3和C4,x方向和y方向相互垂直。通过形成在x方向和y方向的四个电容器C,可以检测晶振片200相对于检测孔A中心在x方向和y方向的偏移即位置异常,在两个方向任意一个方向的位置发生异常,即确认晶振片200的位置发生异常需及时更换。Specifically, as shown in FIG. 1, the above four identical metal electrodes can be uniformly placed around the crystal oscillator piece. For example, four identical metal electrode plates 100 can be divided into two groups, each group including two parallel to each other. The metal electrode plate 100 is respectively placed in four directions of front, rear, left and right, two capacitors C1 and C2 are formed in the x direction with the crystal oscillation piece 200, and two capacitors C3 and C4 are formed in the y direction, and the x direction and the y direction are perpendicular to each other. . By the four capacitors C formed in the x direction and the y direction, it is possible to detect a positional abnormality in the x direction and the y direction with respect to the center of the detection hole A, that is, an abnormality in a position in either direction in both directions, That is, it is confirmed that the position of the crystal oscillation piece 200 is abnormal and needs to be replaced in time.
并且,还可以调整每组金属电极板100与晶振片200的位置,使其形成电容值相同的电容器C,例如,图1中可以调整左侧的金属电极板100和右侧的金属电极板100的位置,使位于检测孔中心的晶振片200位于金属电极板100的中间位置处,若晶振片200位于检测孔中心处,则原理上电容器C1与电容器C2的电容值应该相等,因而,可以通过判断电容值C1与电容值C2之间的差值,来判断晶振片200是否偏离检测孔中心,便于后续步骤中根据检测到的电容器C的电容值,可以快速准确的判断晶振片200的位置是否发生异常,做出快速响应。Moreover, the position of each set of the metal electrode plate 100 and the crystal oscillation piece 200 can be adjusted to form a capacitor C having the same capacitance value. For example, the metal electrode plate 100 on the left side and the metal electrode plate 100 on the right side can be adjusted in FIG. The position of the crystal oscillation piece 200 at the center of the detection hole is located at the middle of the metal electrode plate 100. If the crystal oscillation piece 200 is located at the center of the detection hole, the capacitance values of the capacitor C1 and the capacitor C2 should be equal in principle, and thus, The difference between the capacitance value C1 and the capacitance value C2 is determined to determine whether the crystal oscillation piece 200 deviates from the center of the detection hole, so that the position of the crystal oscillation piece 200 can be quickly and accurately determined according to the detected capacitance value of the capacitor C in the subsequent step. An exception occurs and a quick response is made.
或者,可选地,采用至少两个互不平行的金属电极板,与位于检测孔中心的晶振片形成电容器,也可以采用以下方式实现:Alternatively, optionally, using at least two non-parallel metal electrode plates to form a capacitor with the crystal plate located at the center of the detecting hole may also be implemented in the following manner:
采用两个互不平行的金属电极板,与位于检测孔中心的晶振片形成电容器;例如,如图2所示,可以采用两个互不平行的金属电极板100在x方向和y方向与晶振片200分别形成电容器C1和C3,x方向和y方向可以相互垂直,也可以不垂直,只要x方向和y方向不平行即可。通过在两个不同方向形成的电容器C1和C3可以监测晶振片200在这两个方向的位移,从而判断晶振片200是否偏离检测孔中心,而判断其位置是否异常需要更换。当然,可以采用多于两个金属电极板100与晶振片200形成多个电容器C,从而监测晶振片200在多个方向的位移,在此不做限定。Two mutually non-parallel metal electrode plates are used to form a capacitor with a crystal piece located at the center of the detecting hole; for example, as shown in FIG. 2, two mutually non-parallel metal electrode plates 100 may be used in the x direction and the y direction with the crystal oscillator. The sheets 200 form capacitors C1 and C3, respectively, and the x direction and the y direction may or may not be perpendicular to each other as long as the x direction and the y direction are not parallel. The displacement of the crystal oscillation plate 200 in these two directions can be monitored by the capacitors C1 and C3 formed in two different directions, thereby judging whether the crystal oscillation piece 200 deviates from the center of the detection hole, and judging whether its position is abnormal or not needs to be replaced. Of course, a plurality of capacitors C may be formed by using more than two metal electrode plates 100 and the crystal oscillator 200 to monitor the displacement of the crystal oscillator 200 in multiple directions, which is not limited herein.
可选地,在本公开实施例提供的上述检测方法中,上述实时检测金属电极板分别与晶振片形成的电容器的电容值,具体可以采用以下方式实现:Optionally, in the foregoing detection method provided by the embodiment of the present disclosure, the capacitance value of the capacitor formed by the real-time detecting metal electrode plate and the crystal oscillator piece may be specifically implemented in the following manner:
通过各电容器连接的传感器检测电容器的电容值。The capacitance of the capacitor is detected by a sensor connected to each capacitor.
具体地,如图1和图2所示,金属电极板100和传感器S一一对应,可以在各金属电极板100上固定连接一个导线300的一端,导线300的另一端连接一传感器S。晶振片200一般由层叠的多个膜层结构组成,如图3所示,从上至下依次为镀金(银)电极01、第一铬的粘合层02、石英晶体03、第二铬的粘合层04和镀金(银)图案电极05。可以看出镀金(银)电极01和镀金(银)图案电极05均为导电电极,因此,导线300的一端可以和其中之一连接,导线300的另一端连接传感器S。上述传感器S可以为电容传感器或万用表等能够测量电容值的仪器,此处不做限定。Specifically, as shown in FIG. 1 and FIG. 2, the metal electrode plate 100 and the sensor S are in one-to-one correspondence. One end of one wire 300 may be fixedly connected to each metal electrode plate 100, and the other end of the wire 300 is connected to a sensor S. The crystal oscillator 200 generally consists of a plurality of laminated film layers. As shown in FIG. 3, the gold-plated (silver) electrode 01, the first chromium adhesive layer 02, the quartz crystal 03, and the second chromium are sequentially arranged from top to bottom. Adhesive layer 04 and gold-plated (silver) pattern electrode 05. It can be seen that the gold-plated (silver) electrode 01 and the gold-plated (silver) pattern electrode 05 are both conductive electrodes, and therefore, one end of the wire 300 can be connected to one of them, and the other end of the wire 300 is connected to the sensor S. The sensor S may be an instrument capable of measuring a capacitance value, such as a capacitive sensor or a multimeter, and is not limited herein.
可选地,在本公开实施例提供的上述检测方法中,可以采用导线连接至晶振片的中心处。如图3所示,可以看出,晶振片200一般为圆形,因此如图1和图2所示,可以采用导线300连接至晶振片200的圆心处,以便可以和各金属电极板100形成电容值相同的电容器。此外,晶振片200也可以为其他形状,此处不做限定。Optionally, in the above detection method provided by the embodiment of the present disclosure, a wire may be connected to the center of the crystal oscillator. As shown in FIG. 3, it can be seen that the crystal oscillator 200 is generally circular, so that as shown in FIGS. 1 and 2, the wire 300 can be connected to the center of the crystal plate 200 so as to be formed with each of the metal electrode plates 100. Capacitors with the same capacitance value. In addition, the crystal oscillator 200 may have other shapes, which are not limited herein.
可选地,在本公开实施例提供的上述检测方法中,上述根据检测到的电容器的电容值,确定晶振片相对于检测孔中心的位置是否发生异常,可以采用多种方式根据电容器的电容值判断晶振片的位置是否发生异常。Optionally, in the foregoing detecting method provided by the embodiment of the present disclosure, determining whether an abnormality occurs in a position of the crystal oscillator piece relative to the center of the detecting hole according to the detected capacitance value of the capacitor may be performed according to a capacitance value of the capacitor in various manners. Determine if the position of the crystal oscillator is abnormal.
例如,可以将检测到的电容器的电容值与初始电容值进行比较,来判断晶振片的位置是否发生异常,具体地,在上述实时检测金属电极板分别与晶振片形成的电容器的电容值之前,还可以包括:检测各电容器的初始电容值;即在晶振片工作之前,其位置未发生异常时,记录各电容器的电容值作为初始电容值。For example, the capacitance value of the detected capacitor can be compared with the initial capacitance value to determine whether the position of the crystal oscillation plate is abnormal. Specifically, before the real-time detection of the capacitance value of the capacitor formed by the metal electrode plate and the crystal oscillation plate, The method may further include: detecting an initial capacitance value of each capacitor; that is, when the position of the crystal oscillation plate is not abnormal, the capacitance value of each capacitor is recorded as an initial capacitance value.
对应地,根据检测到的电容器的电容值,确定晶振片相对于检测孔中心的位置是否发生异常,可以具体包括:Correspondingly, determining whether the position of the crystal oscillator relative to the center of the detecting hole is abnormal according to the capacitance value of the detected capacitor may specifically include:
确定本次检测到的电容器的电容值与初始电容值之间的差值是否超出设定范围;Determining whether the difference between the capacitance value of the capacitor detected this time and the initial capacitance value exceeds a set range;
若是,则确定晶振片相对于检测孔中心的位置发生异常;If yes, it is determined that the position of the crystal oscillator piece relative to the center of the detecting hole is abnormal;
若否,则确定晶振片相对于检测孔中心的位置正常。If not, it is determined that the position of the crystal piece relative to the center of the detecting hole is normal.
具体地,通过实时计算检测到的各电容值与对应的初始电容值之间的差值,并与预设范围进行比较,至少确定任意一个差值超过预设范围,则认为晶振片的位置发生异常,通过上述方式可以快速检测到晶振片的位置异常并做出反馈。Specifically, by calculating the difference between the detected capacitance values and the corresponding initial capacitance values in real time, and comparing with the preset range, and determining at least any difference exceeds the preset range, the position of the crystal oscillator is considered to occur. Abnormally, the position of the crystal oscillator can be quickly detected and feedback can be made by the above method.
以图2所示的结构为例,将晶振片200放置在检测孔中心处,并在晶振片200的左侧放置一个金属电极板100,以构成电容器C1,在晶振片200的后侧放置一个金属电极板100,以构成电容器C3。通过导线300将构成各电容器的金属电极板100和晶振片200分别与对应的传感器S连接,并在晶振片200工作之前,分别检测电容器C1和电容器C2的初始电容值。在晶振片200工作时,实时检测电容器C1和电容器C2的电容值,并监测电容器C1和电容器C2的电容值与对应的初始电容值之间的差值,若电容器C1和电容器C2中存在一个电容器的电容值与初始电容值之间的差值超过设定范围,则确定晶振片200相对于检测孔中心的位置发生异常,从而可以及时更换晶振片。在具体实施时,可以根据金属电极板100与晶振片200构成的电容器的电容值的大小,以及允许电容值出现的偏差来确定设定范围的具体数值,例如电容值大概在100μF,允许电容值出现的偏差在0到5%的范围内,则设定范围可以设置为0到5μF,此处只是举例说明,并不对电容值和设定范围进行限定。Taking the structure shown in FIG. 2 as an example, the crystal oscillation piece 200 is placed at the center of the detection hole, and a metal electrode plate 100 is placed on the left side of the crystal oscillation plate 200 to constitute a capacitor C1, and a rear side of the crystal oscillation piece 200 is placed. The metal electrode plate 100 is configured to constitute a capacitor C3. The metal electrode plate 100 and the crystal oscillation plate 200 constituting each capacitor are respectively connected to the corresponding sensor S through the wire 300, and the initial capacitance values of the capacitor C1 and the capacitor C2 are respectively detected before the crystal oscillation piece 200 operates. When the crystal oscillator 200 operates, the capacitance values of the capacitor C1 and the capacitor C2 are detected in real time, and the difference between the capacitance values of the capacitor C1 and the capacitor C2 and the corresponding initial capacitance value is monitored, if one capacitor exists in the capacitor C1 and the capacitor C2 If the difference between the capacitance value and the initial capacitance value exceeds the set range, it is determined that the position of the crystal oscillation piece 200 with respect to the center of the detection hole is abnormal, so that the crystal oscillation piece can be replaced in time. In a specific implementation, the specific value of the set range may be determined according to the capacitance value of the capacitor formed by the metal electrode plate 100 and the crystal oscillator 200, and the deviation of the allowable capacitance value, for example, the capacitance value is approximately 100 μF, and the allowable capacitance value is If the deviation occurs in the range of 0 to 5%, the setting range can be set to 0 to 5 μF. This is only an example, and the capacitance value and setting range are not limited.
或者,可选地,在本公开实施例提供的上述检测方法中,在采用四个相同的金属电极板分别放置于晶振片的四周,与晶振片形成四个电容器时,对应地,上述根据检测到的电容器的电容值,确定晶振片相对于检测孔中心的位置是否发生异常,可以具体包括:Alternatively, in the above detection method provided by the embodiment of the present disclosure, when four identical metal electrode plates are respectively placed around the crystal oscillation plate and four capacitors are formed with the crystal oscillation plate, correspondingly, the above detection is performed. The capacitance value of the capacitor to be determined to determine whether the position of the crystal oscillator relative to the center of the detecting hole is abnormal may specifically include:
确定位置相对的两个金属电极板与晶振片形成的电容器的电容值之间的差值是否超出设定范围;Determining whether a difference between the capacitance values of the two metal electrode plates opposite to each other and the capacitor formed by the crystal oscillation plate exceeds a set range;
若是,则确定晶振片相对于检测孔中心的位置发生异常;If yes, it is determined that the position of the crystal oscillator piece relative to the center of the detecting hole is abnormal;
若否,则确定晶振片相对于检测孔中心的位置正常。If not, it is determined that the position of the crystal piece relative to the center of the detecting hole is normal.
具体地,采用位置相对的两个金属电极板与晶振片形成的电容器的电容 值之间的差值,与预设范围进行比较,至少确定任意一个差值超过预设范围,则认为晶振片的位置发生异常,通过上述方式可以快速检测到晶振片的位置异常并做出反馈。Specifically, the difference between the capacitance values of the capacitors formed by the two metal electrode plates and the crystal oscillator plates is compared with the preset range, and at least any difference is determined to exceed the preset range, and the crystal oscillator is considered to be An abnormality occurs in the position. In the above manner, the position of the crystal oscillator can be quickly detected and feedback can be made.
以图1所示的结构为例,将晶振片200放置在检测孔中心处,并在晶振片200的四周分别放置一个金属电极板100,例如可以将金属电极板100放置在晶振片200的前后左右四个方向。通过导线300将构成各电容器的金属电极板100和晶振片200分别与对应的传感器S连接,在晶振片200工作时,实时检测各电容器(C1、C2、C3和C4)的电容值,并监测电容器C1与电容器C2之间的电容值的差值,以及电容器C3与电容器C4之间的电容值的差值,若电容器C1与电容器C2之间的电容值的差值超出设定范围,或者,电容器C3与电容器C4之间的电容值的差值超出设定范围,或者,二者均超出设定范围,则可以确定晶振片200相对于检测孔中心的位置发生异常,从而可以及时更换晶振片。与图2所示的结构类似,在具体实施时,可以根据金属电极板100与晶振片200构成的电容器的电容值的大小,以及允许电容值出现的偏差来确定设定范围的具体数值,此处不对电容值和设定范围的具体数值进行限定。Taking the structure shown in FIG. 1 as an example, the crystal oscillation piece 200 is placed at the center of the detection hole, and a metal electrode plate 100 is placed around the crystal oscillation piece 200. For example, the metal electrode plate 100 can be placed before and after the crystal oscillation plate 200. Four directions left and right. The metal electrode plate 100 and the crystal oscillation plate 200 constituting each capacitor are respectively connected to the corresponding sensor S through the wire 300, and the capacitance values of the respective capacitors (C1, C2, C3, and C4) are detected in real time during the operation of the crystal oscillation plate 200, and monitored. The difference between the capacitance value between the capacitor C1 and the capacitor C2, and the difference between the capacitance value between the capacitor C3 and the capacitor C4, if the difference between the capacitance values between the capacitor C1 and the capacitor C2 exceeds the set range, or If the difference between the capacitance value between the capacitor C3 and the capacitor C4 exceeds the set range, or both of them exceed the set range, it can be determined that the position of the crystal oscillation piece 200 relative to the center of the detection hole is abnormal, so that the crystal oscillation piece can be replaced in time. . Similar to the structure shown in FIG. 2, in a specific implementation, the specific value of the set range may be determined according to the magnitude of the capacitance value of the capacitor formed by the metal electrode plate 100 and the crystal oscillation plate 200, and the deviation of the allowable capacitance value. The specific values of the capacitance value and the setting range are not limited.
基于同一发明构思,本公开实施例还提供了一种蒸镀设备,包括本公开实施例提供的上述检测装置。由于该蒸镀设备解决问题的原理与前述一种蒸镀设备中晶振片位置的检测装置相似,因此该蒸镀设备的实施可以参见检测装置的实施,重复之处不再赘述。Based on the same inventive concept, an embodiment of the present disclosure further provides an evaporation apparatus, including the above detection apparatus provided by the embodiment of the present disclosure. Since the principle of solving the problem of the vapor deposition device is similar to the detection device for the position of the crystal oscillator in the vapor deposition device, the implementation of the vapor deposition device can be referred to the implementation of the detection device, and the repeated description is omitted.
基于同一发明构思,本公开实施例还提供了一种蒸镀方法,包括:在进行材料蒸镀的过程中,采用本公开实施例提供的上述晶振片位置的检测方法。由于该蒸镀方法解决问题的原理与前述一种蒸镀设备中晶振片位置的检测方法相似,因此该蒸镀方法的实施可以参见检测方法的实施,重复之处不再赘述。Based on the same inventive concept, an embodiment of the present disclosure further provides an evaporation method, including: in the process of performing material evaporation, the method for detecting the position of the crystal oscillator provided by the embodiment of the present disclosure. Since the principle of solving the problem by the vapor deposition method is similar to the method for detecting the position of the crystal oscillator in the vapor deposition apparatus, the implementation of the vapor deposition method can be referred to the implementation of the detection method, and the repeated description will not be repeated.
本公开实施例提供的上述蒸镀设备中晶振片位置的检测方法、蒸镀方法及相关装置,采用至少两个互不平行的金属电极板,与位于检测孔中心的晶 振片形成电容器;在晶振片工作时,实时检测电容器的电容值;根据检测到的电容器的电容值,确定晶振片相对于检测孔中心的位置是否发生异常;在确定发生异常时,更换异常的晶振片。在进行材料蒸镀的过程中,通过检测由晶振片和金属电极板形成的电容器的电容值,可以实时监测晶振片的位置信息,从而可以及时更换位置异常的晶振片,避免由于晶振片偏离检测孔中心而引起蒸镀速率异常波动,可以提高产能和产品良率。The method for detecting the position of the crystal oscillator in the vapor deposition apparatus provided by the embodiment of the present disclosure, the vapor deposition method and the related device employ at least two metal electrode plates which are not parallel to each other, and form a capacitor with the crystal plate located at the center of the detection hole; When the chip is working, the capacitance value of the capacitor is detected in real time; according to the detected capacitance value of the capacitor, whether the position of the crystal oscillator piece relative to the center of the detecting hole is abnormal is determined; when it is determined that an abnormality occurs, the abnormal crystal piece is replaced. In the process of material evaporation, by detecting the capacitance value of the capacitor formed by the crystal oscillator and the metal electrode plate, the position information of the crystal oscillator piece can be monitored in real time, so that the crystal oscillator piece with abnormal position can be replaced in time to avoid the deviation detection of the crystal oscillator piece. The center of the hole causes abnormal fluctuations in the vapor deposition rate, which can increase productivity and product yield.
尽管已描述了本公开的优选实施例,但本领域内的技术人员一旦得知了基本创造性概念,则可对这些实施例作出另外的变更和修改。所以,所附权利要求意欲解释为包括优选实施例以及落入本公开范围的所有变更和修改。While the preferred embodiment of the present disclosure has been described, it will be apparent that those skilled in the art can make further changes and modifications to the embodiments. Therefore, the appended claims are intended to be interpreted as including the preferred embodiments and the modifications
显然,本领域的技术人员可以对本公开实施例进行各种改动和变型而不脱离本公开实施例的精神和范围。这样,倘若本公开实施例的这些修改和变型属于本公开权利要求及其等同技术的范围之内,则本公开也意图包含这些改动和变型在内。It is apparent that those skilled in the art can make various modifications and variations to the embodiments of the present disclosure without departing from the spirit and scope of the embodiments of the present disclosure. Thus, the present disclosure is intended to cover such modifications and variations as the modifications and variations of the embodiments of the present disclosure.

Claims (11)

  1. 一种蒸镀设备中晶振片位置的检测装置,其中,包括:A device for detecting the position of a crystal oscillator in an evaporation device, which comprises:
    至少两个金属电极板,各所述金属电极板之间互不平行,各所述金属电极板分别与位于检测孔中心的晶振片形成电容器;At least two metal electrode plates, each of the metal electrode plates are not parallel to each other, and each of the metal electrode plates forms a capacitor with a crystal oscillator plate located at a center of the detecting hole;
    传感器,各所述传感器与各所述电容器一一对应,所述传感器通过导线分别与形成所述电容器的晶振片和金属电极板连接;a sensor, each of the sensors is in one-to-one correspondence with each of the capacitors, and the sensors are respectively connected to a crystal plate and a metal electrode plate forming the capacitor through wires;
    处理器,所述处理器与各所述传感器连接,用于根据所述传感器检测到的所述电容器的电容值,确定所述晶振片相对于所述检测孔中心的位置是否发生异常;在确定发生异常时,更换异常的所述晶振片。a processor, the processor being connected to each of the sensors, configured to determine, according to a capacitance value of the capacitor detected by the sensor, whether an abnormality occurs in a position of the crystal oscillator relative to a center of the detecting hole; When an abnormality occurs, the abnormal crystal piece is replaced.
  2. 如权利要求1所述的检测装置,其中,四个相同的金属电极板分别位于所述晶振片的四周,且与所述晶振片形成四个电容器。The detecting device according to claim 1, wherein four identical metal electrode plates are respectively located around the crystal oscillation plate, and four capacitors are formed with the crystal oscillation plate.
  3. 如权利要求2所述的检测装置,其中,所述导线连接至所述晶振片的中心处。The detecting device according to claim 2, wherein the wire is connected to a center of the crystal piece.
  4. 如权利要求1-3任一项所述的检测装置,其中,所述处理器,具体用于检测各所述电容器的初始电容值,确定所述传感器本次检测到的所述电容器的电容值与所述初始电容值之间的差值是否超出设定范围;若是,则确定所述晶振片相对于所述检测孔中心的位置发生异常;若否,则确定所述晶振片相对于所述检测孔中心的位置正常。The detecting device according to any one of claims 1 to 3, wherein the processor is specifically configured to detect an initial capacitance value of each of the capacitors, and determine a capacitance value of the capacitor that the sensor detects this time. Whether the difference between the initial capacitance value and the initial capacitance value exceeds a set range; if yes, determining that the position of the crystal oscillation plate relative to the center of the detection hole is abnormal; if not, determining the crystal oscillation piece relative to the The position of the center of the detection hole is normal.
  5. 如权利要求2所述的检测装置,其中,所述处理器,具体用于确定位置相对的两个金属电极板与所述晶振片形成的电容器的电容值之间的差值是否超出设定范围;若是,则确定所述晶振片相对于所述检测孔中心的位置发生异常;若否,则确定所述晶振片相对于所述检测孔中心的位置正常。The detecting device according to claim 2, wherein the processor is specifically configured to determine whether a difference between capacitance values of the two metal electrode plates and the capacitors formed by the crystal plate are out of a set range If yes, it is determined that the position of the crystal piece relative to the center of the detecting hole is abnormal; if not, the position of the crystal piece with respect to the center of the detecting hole is determined to be normal.
  6. 一种蒸镀设备中晶振片位置的检测方法,其中,所述检测方法采用如权利要求1~5任一项所述的检测装置实现,包括:A method for detecting a position of a crystal oscillator in an evaporation apparatus, wherein the detection method is implemented by the detecting apparatus according to any one of claims 1 to 5, comprising:
    在晶振片工作时,实时检测金属电极板分别与所述晶振片形成的电容器的电容值;During the operation of the crystal oscillator, the capacitance values of the capacitors formed by the metal electrode plates and the crystal oscillator pieces are detected in real time;
    根据检测到的所述电容器的电容值,确定所述晶振片相对于所述检测孔中心的位置是否发生异常;Determining, according to the detected capacitance value of the capacitor, whether the position of the crystal oscillator relative to the center of the detecting hole is abnormal;
    在确定发生异常时,更换异常的所述晶振片。When it is determined that an abnormality has occurred, the abnormal crystal piece is replaced.
  7. 如权利要求6所述的检测方法,其中,所述实时检测金属电极板分别与所述晶振片形成的电容器的电容值,具体包括:The detecting method according to claim 6, wherein the real-time detecting the capacitance value of the capacitor formed by the metal electrode plate and the crystal oscillator respectively comprises:
    通过各所述电容器连接的传感器检测所述电容器的电容值。A capacitance value of the capacitor is detected by a sensor connected to each of the capacitors.
  8. 如权利要求6或7所述的检测方法,其中,在实时检测金属电极板分别与所述晶振片形成的电容器的电容值之前,还包括:检测各所述电容器的初始电容值;The detecting method according to claim 6 or 7, wherein before detecting the capacitance values of the capacitors formed by the metal electrode plates and the crystal oscillator pieces in real time, the method further comprises: detecting an initial capacitance value of each of the capacitors;
    所述根据检测到的所述电容器的电容值,确定所述晶振片相对于所述检测孔中心的位置是否发生异常,具体包括:Determining, according to the detected capacitance value of the capacitor, whether the position of the crystal oscillator relative to the center of the detecting hole is abnormal, specifically:
    判断本次检测到的所述电容器的电容值与初始电容值之间的差值是否超出设定范围;Determining whether the difference between the capacitance value of the capacitor detected this time and the initial capacitance value exceeds a set range;
    若是,则确定所述晶振片相对于所述检测孔中心的位置发生异常;If yes, determining that the position of the crystal piece relative to the center of the detecting hole is abnormal;
    若否,则确定所述晶振片相对于所述检测孔中心的位置正常。If not, it is determined that the position of the crystal piece relative to the center of the detecting hole is normal.
  9. 如权利要求6所述的检测方法,其中,四个相同的金属电极板分别位于所述晶振片的四周,且与所述晶振片形成四个电容器;The detecting method according to claim 6, wherein four identical metal electrode plates are respectively located around the crystal oscillation plate, and four capacitors are formed with the crystal oscillation plate;
    所述根据检测到的所述电容器的电容值,确定所述晶振片相对于所述检测孔中心的位置是否发生异常,具体包括:Determining, according to the detected capacitance value of the capacitor, whether the position of the crystal oscillator relative to the center of the detecting hole is abnormal, specifically:
    判断位置相对的两个金属电极板与所述晶振片形成的电容器的电容值之间的差值是否超出设定范围;Determining whether a difference between the capacitance values of the two metal electrode plates opposite to each other and the capacitor formed by the crystal oscillation plate exceeds a set range;
    若是,则确定所述晶振片相对于所述检测孔中心的位置发生异常;If yes, determining that the position of the crystal piece relative to the center of the detecting hole is abnormal;
    若否,则确定所述晶振片相对于所述检测孔中心的位置正常。If not, it is determined that the position of the crystal piece relative to the center of the detecting hole is normal.
  10. 一种蒸镀设备,其中,包括如权利要求1~5任一项所述的检测装置。An evaporation apparatus comprising the detecting device according to any one of claims 1 to 5.
  11. 一种蒸镀方法,其中,包括:An evaporation method, comprising:
    在进行材料蒸镀的过程中,采用如权利要求6~9任一项所述的晶振片位置的检测方法。In the process of performing material evaporation, the method for detecting the position of the crystal oscillator according to any one of claims 6 to 9 is employed.
PCT/CN2018/124441 2018-05-10 2018-12-27 Method for detecting position of sensor crystal in vapor deposition device, vapor deposition method, and related device WO2019214255A1 (en)

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