WO2019209034A1 - Dispositif électroluminescent - Google Patents

Dispositif électroluminescent Download PDF

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Publication number
WO2019209034A1
WO2019209034A1 PCT/KR2019/004972 KR2019004972W WO2019209034A1 WO 2019209034 A1 WO2019209034 A1 WO 2019209034A1 KR 2019004972 W KR2019004972 W KR 2019004972W WO 2019209034 A1 WO2019209034 A1 WO 2019209034A1
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WO
WIPO (PCT)
Prior art keywords
light emitting
encapsulation
emitting device
emitting diode
light
Prior art date
Application number
PCT/KR2019/004972
Other languages
English (en)
Korean (ko)
Inventor
김명진
오광용
Original Assignee
서울반도체주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 서울반도체주식회사 filed Critical 서울반도체주식회사
Publication of WO2019209034A1 publication Critical patent/WO2019209034A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483—Containers
    • H01L33/486—Containers adapted for surface mounting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/54—Encapsulations having a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/56—Materials, e.g. epoxy or silicone resin
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H01L33/60—Reflective elements

Definitions

  • the present invention relates to a light emitting device.
  • a light emitting diode emits light of various wavelengths by recombination of electrons and holes at junctions of p and n-type semiconductors when a current is applied.
  • the light emitting diode is continuously increasing in demand due to various advantages such as long life, low power, and excellent driving characteristics compared to the filament used in the conventional light emitting device.
  • a light emitting diode (hereinafter, referred to as a light emitting diode chip) in a chip unit is packaged into an encapsulation member serving as a phosphor or a lens and applied to a light emitting device. Light emitted from the light emitting diode chip is emitted through the sealing member to the outside.
  • the LED chip and the encapsulation member have large thermal expansion coefficients different from each other.
  • the encapsulation member has a larger coefficient of thermal expansion than the light emitting diode chip. Therefore, the encapsulation member is greatly expanded or contracted by the temperature change caused by the LED chip or other causes. Since the degree of shrinkage or expansion according to the temperature change has a big difference between the LED chip and the sealing member, cracks occur in the sealing member.
  • the problem to be solved by the present invention is to provide a light emitting device having improved reliability by preventing cracks in the sealing member.
  • Another object of the present invention is to provide a light emitting device capable of preventing the penetration of an external material into the inside.
  • Another object of the present invention is to provide a light emitting device capable of improving light extraction efficiency.
  • a light emitting device including a light emitting diode chip, an encapsulation member positioned on the light emitting diode chip, and a protection member positioned on an upper surface of the encapsulation member.
  • the thermal expansion coefficient of the protection member is lower than the thermal expansion coefficient of the sealing member.
  • the light emitting device can form a protective member having a lower coefficient of thermal expansion than the encapsulation member on the encapsulation member surrounding the light emitting diode chip, thereby reducing and preventing the occurrence of cracks in the encapsulation member.
  • the light emitting device may form a protective member on the encapsulation member, thereby preventing the external material from penetrating therein, thereby preventing the encapsulation member and the light emitting diode chip from being damaged.
  • the light emitting device can improve the light extraction efficiency by the reflective member surrounding the side of the sealing member.
  • FIG. 1 is an exemplary view showing a light emitting device according to a first embodiment of the present invention.
  • 3 and 4 are views illustrating a comparison between a conventional light emitting device and a light emitting device according to an embodiment of the present invention.
  • FIG. 4 is an exemplary view illustrating a light emitting device according to a second embodiment of the present invention.
  • FIG 5 is an exemplary view showing a light emitting device according to a third embodiment of the present invention.
  • FIG. 6 is an exemplary view showing a light emitting device according to a fourth embodiment of the present invention.
  • FIG. 7 is an exemplary view illustrating a light emitting device according to a fifth embodiment of the present invention.
  • FIG 8 is an exemplary view showing a light emitting device according to a sixth embodiment of the present invention.
  • FIG 9 is an exemplary view showing a light emitting device according to a seventh embodiment of the present invention.
  • FIG 10 is an exemplary view showing a light emitting device according to an eighth embodiment of the present invention.
  • a light emitting device includes a light emitting diode chip, an encapsulation member positioned on the light emitting diode chip, and a protection member positioned on an upper surface of the encapsulation member.
  • the thermal expansion coefficient of the protection member is lower than the thermal expansion coefficient of the sealing member.
  • the encapsulation member covers the top and side surfaces of the light emitting diode chip.
  • the protective member covers the entire upper surface of the encapsulation member.
  • the encapsulation member may further include a phosphor.
  • the encapsulation member may further include a filler.
  • the protective member may further include a phosphor.
  • the protective member is formed of a material that transmits light.
  • the protective member may be a glass sheet.
  • a thickness of the encapsulation member disposed on the light emitting diode chip may be 50 to 500 ⁇ m.
  • the thickness of the protective member may be 20 ⁇ 300 ⁇ m.
  • the light emitting diode chip may be flip bonded on a circuit board.
  • the light emitting device may further include a reflective member surrounding the side surface of the encapsulation member.
  • the reflective member surrounds the side of the encapsulant and the protective member.
  • the protective member covers the upper surfaces of the reflective member and the encapsulation member.
  • the light emitting device may further include an adhesive member positioned between the encapsulation member and the protective member.
  • the adhesive member is formed of a material that transmits light.
  • the thickness of the adhesive member may be 0.5 ⁇ 50 ⁇ m.
  • the protection member may be formed to further cover the side of the encapsulation member.
  • FIG. 1 is an exemplary view showing a light emitting device according to a first embodiment of the present invention.
  • the light emitting device 100 includes a light emitting diode chip 110, an encapsulation member 120, and a protection member 140.
  • the light emitting diode chip 110 is formed of a gallium nitride-based semiconductor stack on a growth substrate for growing a semiconductor layer.
  • the light emitting diode chip 110 emits visible light such as ultraviolet light or blue light.
  • the light emitting diode chip 110 may have an electrode formed at a lower portion thereof. Therefore, the LED chip 110 may be mounted and connected to an external circuit board (not shown) by flip chip bonding.
  • the encapsulation member 120 is formed to surround the top and side surfaces of the LED chip 110.
  • the encapsulation member 120 may be formed of any one of an epoxy resin, a silicone resin, and a polyimide.
  • the encapsulation member 120 may include a phosphor 131 for wavelength converting light emitted from the light emitting diode chip 110.
  • Light of the light emitting diode chip 110 is wavelength-converted into light of a user's desired color by the phosphor 131 and is emitted to the outside of the light emitting device 100.
  • the filler 132 may be dispersed in the encapsulation member 120.
  • the filler 132 may allow a penetration path for infiltrating dust, moisture, gas, and the like outside the light emitting device 100 to the light emitting diode chip 110 to be longer. Therefore, the filler 132 may serve to prevent dust, moisture, gas, and the like from penetrating into the LED chip 110.
  • the filler 132 prevents the phosphor 131 from being concentrated in a predetermined region of the encapsulation member 120. That is, the filler 132 may be positioned between the phosphors 131 so that the phosphors 131 may be evenly distributed throughout the encapsulation member 120.
  • the filler 132 may improve the strength of the encapsulation member 120.
  • the encapsulation member 120 may be formed to have a thickness of about 50 ⁇ m to about 500 ⁇ m on the upper surface of the LED chip 110.
  • the protection member 140 is positioned above the encapsulation member 120. In this case, the protection member 140 is formed to cover the entire upper surface of the encapsulation member 120.
  • the protection member 140 may be formed on the top surface of the encapsulation member 120 when the encapsulation member 120 is in a semi-cured state. In this state, the protection member 140 may be fixed to the upper surface of the sealing member 120 in a manner of completely curing the sealing member 120.
  • the protection member 140 may be fixed to the top surface of the encapsulation member 120 using an adhesive material (not shown).
  • the light emitting device including the adhesive material will be described later in other embodiments.
  • the protection member 140 has a lower coefficient of thermal expansion than the encapsulation member 120.
  • the protection member 140 is formed of a material that transmits light.
  • the protection member 140 may be formed to have a thickness of 20 to 300 ⁇ m on the upper surface of the encapsulation member 120.
  • the protective member 140 may be a glass sheet having a light transmittance of 80% or more.
  • the protection member 140 may be made of a material having a low coefficient of thermal expansion, such as acrylic and sapphire, in addition to glass.
  • the thermal expansion coefficient of the protective member 140 may be 1 ⁇ 30ppm / °C.
  • the thermal expansion coefficient of the protective member 140 may be 1 ⁇ 10ppm / °C.
  • the light emitting diode chip 110 and the sealing member 120 have a large difference in thermal expansion coefficient.
  • the encapsulation member 120 has a larger coefficient of thermal expansion than the light emitting diode chip 110. Therefore, a crack is generated in the encapsulation member 120 by the heat generated in the light emitting diode chip 110.
  • the difference in coefficient of thermal expansion between the LED chip 110 and the encapsulation member 120 reduces the adhesion between the encapsulation member 120 and the LED chip 110, so that the encapsulation member 120 is the LED chip 110. Can be peeled off.
  • the light of the light emitting diode chip 110 which is not wavelength converted may be emitted to the outside as it is.
  • the protection member 140 having a lower coefficient of thermal expansion than the encapsulation member 120 is formed on the encapsulation member 120.
  • the protection member 140 Since the protection member 140 has a low coefficient of thermal expansion, there is little change in volume or length such as expansion or contraction even with temperature change.
  • the protection member 140 is bonded to the sealing member 120 to reduce the extent to which the sealing member 120 is expanded or contracted according to the temperature change. That is, the protection member 140 serves to fix the encapsulation member 120 so that the length or volume does not change with temperature.
  • the light emitting device 100 may reduce or prevent a phenomenon in which a crack, peeling, or the like occurs in the encapsulation member 120 by the protection member 140.
  • the protection member 140 is formed to cover the entire upper surface of the sealing member 120.
  • the protection member 140 prevents harmful substances such as moisture, gas, dust, and the like from penetrating the outside of the light emitting device 100. That is, the protection member 140 prevents external harmful substances from penetrating into the sealing member 120. Therefore, it is possible to prevent the sealing member 120 from being damaged by the penetration of external harmful substances by the protective member 140.
  • the protection member 140 may prevent external harmful substances from penetrating into the LED chip 110 and damaging the LED chip 110.
  • the light emitting device 100 prevents the cracking, peeling, etc. of the encapsulation member 120 by the protection member 140, and the encapsulation member 120 and the light emitting diode chip 110 from external harmful substances. To prevent it from being damaged. As described above, the light emitting device 100 in which the protection member 140 is formed has improved reliability.
  • the description of the same configuration as in the previous embodiment will be omitted. Therefore, the omitted description will refer to the description of the light emitting device of the previous embodiment.
  • FIGS. 2 and 3 are views illustrating a conventional light emitting device and a light emitting device according to an embodiment of the present invention.
  • FIG. 2 illustrates a light emitting diode chip and an encapsulation member 120 covering a light emitting diode chip with a conventional light emitting device 100.
  • FIG. 3 is a light emitting device 100 according to an exemplary embodiment of the present invention and includes a light emitting diode chip, an encapsulation member, and a protection member 140 formed on an upper surface of the encapsulation member.
  • the light emitting device 100 illustrated in FIG. 4 corresponds to the light emitting device 100 according to the first embodiment.
  • the protection member 140 is formed of a transparent material, the state of the encapsulation member 120 may be confirmed through the protection member 140.
  • the sealing member has a higher coefficient of thermal expansion than the light emitting diode chip. Therefore, the encapsulation member 120 expands or contracts larger than the light emitting diode chip according to the temperature. Since the degree of expansion or contraction of the light emitting diode chip and the sealing member is different, as shown in FIG. 2, a crack C is generated in the sealing member.
  • a protective member having a lower coefficient of thermal expansion than an encapsulating member is formed on an upper surface of the encapsulating member. Since the protective member has a lower coefficient of thermal expansion than the sealing member, the degree of shrinkage and expansion due to temperature is smaller than that of the sealing member. Therefore, the protective member adhered to the sealing member can suppress the phenomenon that the sealing member shrinks or expands.
  • FIG. 4 is an exemplary view illustrating a light emitting device according to a second embodiment of the present invention.
  • the light emitting device 200 includes a light emitting diode chip 110, an encapsulation member 120, a protection member 140, and an adhesive member 150.
  • the adhesive member 150 is disposed between the encapsulation member 120 and the protective member 140. By the adhesive member 150, the protection member 140 is fixed to the upper surface of the encapsulation member 120.
  • the adhesive member 150 may be formed to a thickness of 0.5 ⁇ 50 ⁇ m.
  • the adhesive member 150 may be formed of a light transmitting material having adhesive strength. Therefore, since the adhesive member 150 is formed of a light transmissive material, light emitted from the light emitting diode chip 110 may pass through the adhesive member 150 and the protective member 140 to be emitted to the outside of the light emitting device 200. Can be.
  • the adhesive member 150 may have an adhesive force capable of adhering the encapsulation member 120 and the protective member 140, and may be formed of any material as long as the adhesive member 150 may transmit light emitted from the light emitting diode chip 110.
  • the protection member 140 is more secured to the encapsulation member 120 by improving adhesion between the protection member 140 and the encapsulation member 120. Therefore, the protection member 140 may reduce the degree of shrinkage or expansion of the encapsulation member 120 according to the temperature change, thereby reducing and preventing the occurrence of cracks in the encapsulation member 120.
  • the light emitting device 200 may better prevent the external harmful substances from penetrating into the interior of the light emitting device 200 by improving the adhesion between the encapsulation member 120 and the protective member 140. have.
  • the adhesive member 150 may have a lower coefficient of thermal expansion than the encapsulation member 120.
  • the adhesive member 150 may have a coefficient of thermal expansion similar to or lower than that of the protective member 140.
  • the adhesive member 150 may have a coefficient of thermal expansion between the encapsulation member 120 and the protective member 140. Therefore, the adhesive member 150 may help the protection member 140 to suppress the degree of expansion and contraction of the encapsulation member 120.
  • the light emitting device 200 according to the embodiment of the present invention is improved in reliability by the adhesive member 150.
  • an adhesive member 150 may be formed between the protective member 140 and the encapsulation member 120 according to a selection by those skilled in the art. In this case, the adhesive member 150 may be formed between at least one surface of the encapsulation member 120 and the protection member 140.
  • FIG 5 is an exemplary view showing a light emitting device according to a third embodiment of the present invention.
  • the light emitting device 300 includes a light emitting diode chip 110, an encapsulation member 120, a protective member 140, and a reflective member 160.
  • the reflective member 160 is formed to surround side surfaces of the encapsulation member 120 and the protective member 140.
  • the reflective member 160 is formed of a material that reflects light emitted from the light emitting diode chip 110.
  • the reflective member 160 may be made of metal.
  • the light directed toward the reflective member 160 among the light emitted from the light emitting diode chip 110 is reflected by the reflective member 160, so that the protection member is located above the light emitting diode chip 110. Incident on 140. In addition, the remaining light is incident to the protection member 140 without passing through the reflective member 160.
  • the reflective member 160 reflects the light emitted in the lateral direction of the light emitting diode chip 110 to be incident on the protective member 140.
  • the light emitted in the upper direction of the light emitting diode chip 110 is incident on the protection member 140 without being reflected by the reflective member 160. That is, the reflective member 160 allows all of the light of the LED chip 110 to pass through the protection member 140 positioned on the LED chip 110.
  • the light emitting device 300 may emit light in a predetermined region or in one direction by using the reflective member 160.
  • the reflective member 160 since all light emitted from the light emitting diode chip 110 by the reflective member 160 may be emitted in a predetermined region, light extraction efficiency is improved.
  • the light emitting device 300 can prevent the harmful member from penetrating into the light emitting device 300 not only by the protective member 140 but also by the reflective member 160. Accordingly, since the light emitting device 300 is prevented from being damaged by the external harmful substances by the reflective member 160 and the protective member 140, the reliability can be improved.
  • an adhesive member may be further formed between the protective member 140 and the encapsulation member 120 as necessary.
  • FIG. 6 is an exemplary view showing a light emitting device according to a fourth embodiment of the present invention.
  • the light emitting device 400 includes a light emitting diode chip 110, an encapsulation member 120, a protective member 140, and a reflective member 160.
  • the reflective member 160 is formed to surround the side of the encapsulation member 120.
  • the reflective member 160 is formed of a material that reflects light of the LED chip 110.
  • the protection member 140 is formed on the reflective member 160 and the encapsulation member 120.
  • the protection member 140 is formed to cover the upper surface of the reflective member 160 and the entire upper surface of the encapsulation member 120.
  • All of the light emitted from the LED chip 110 by the reflective member 160 is incident on the protection member 140 positioned on the LED chip 110.
  • the protection member 140 is formed to have a larger area than the encapsulation member 120.
  • the light incident on the encapsulation member 120 is refracted by the protective member 140, and the light incident on the protective member 140 is emitted to the outside through the outer surface of the protective member 140 exposed to the outside. Therefore, the light emitting device 400 of the present embodiment emits light to the outside through a larger area than the encapsulation member 120. That is, the light emitting device 400 according to the present exemplary embodiment has a large light emitting area due to the structure in which the protective member 140 covers the upper surface of the reflective member 160 and the upper surface of the encapsulation member 120.
  • the protection member 140 covers the upper surface of the encapsulation member 120, and the reflective member 160 covers the side surface of the encapsulation member 120. Therefore, the light emitting device 400 can prevent the external harmful substances from penetrating into the inside, thereby improving reliability.
  • FIG. 7 is an exemplary view illustrating a light emitting device according to a fifth embodiment of the present invention.
  • the light emitting device 500 includes a light emitting diode chip 110, an encapsulation member 120, and a protection member 140.
  • the encapsulation member 120 is formed to surround the LED chip 110.
  • the protection member 140 is formed to cover the upper surface of the sealing member 120.
  • the first phosphor 171 is dispersed in the encapsulation member 120.
  • the second phosphor 172 is dispersed in the protective member 140.
  • the protection member 140 may be a phosphor in glass (PIG) in which phosphors are dispersed in the glass sheet.
  • the first phosphor 171 and the second phosphor 172 are the same phosphor.
  • Only part of the light emitted from the light emitting diode chip 110 may be wavelength-converted by the first phosphor 171 in the encapsulation member 120.
  • the light that is not wavelength-converted may be wavelength-converted by the second phosphor 172 of the encapsulation member 120 while the light passes through the encapsulation member 120.
  • the light emitting device 500 may reduce light that is not wavelength converted among light emitted to the outside. Therefore, in the present embodiment, the light emitting device 500 may convert the light emitted from the light emitting diode chip 110 as much as possible to emit light of good quality to the outside.
  • FIG 8 is an exemplary view showing a light emitting device according to a sixth embodiment of the present invention.
  • the light emitting device 600 includes a light emitting diode chip 110, an encapsulation member 120, and a protection member 140.
  • the encapsulation member 120 is formed to surround the LED chip 110.
  • the protection member 140 is formed to cover the upper surface of the sealing member 120.
  • the first phosphor 181 is dispersed in the encapsulation member 120.
  • the second phosphor 182 is dispersed in the protective member 140.
  • the first phosphor 181 and the second phosphor 182 are different phosphors. That is, the first phosphor 181 and the second phosphor 182 convert light into different wavelengths.
  • Some of the light emitted from the light emitting diode chip 110 is wavelength-converted only to the first phosphor 181. In addition, other portions of the light emitted from the light emitting diode chip 110 are wavelength-converted by at least one of the first phosphor 181 and the second phosphor 182.
  • the light emitted in the side direction of the light emitting diode chip 110 passes through only the protection member 140, and thus is wavelength-converted only by the first phosphor 181. Therefore, only light wavelength-converted by the first phosphor 181 is emitted from the side of the light emitting device 600.
  • the wavelength is caused by at least one of the first phosphor 181 and the second phosphor 182. Is converted. Therefore, the light wavelength-converted by the first phosphor 181 and the wavelength-converted light by the second phosphor 182 are emitted from the upper surface of the light emitting device 600.
  • the light emitting device 600 emits light of different colors from the upper surface and the side surface.
  • the light emitting device 600 may emit light of various colors by dispersing different phosphors on the encapsulation member 120 and the protection member 140.
  • FIG 9 is an exemplary view illustrating a light emitting device according to a seventh embodiment.
  • the light emitting device 700 includes a light emitting diode chip 110, an encapsulation member 120, a protective member 140, and a reflective member 160.
  • the encapsulation member 120 may include a first phosphor 181, and the protection member 140 may include a second phosphor 182.
  • the first phosphor 181 and the second phosphor 182 converts light into different wavelengths.
  • the reflective member 160 is formed to surround side surfaces of the encapsulation member 120 and the protective member 140. Accordingly, the reflective member 160 allows the light emitted from the light emitting diode chip 110 to be emitted toward the top of the light emitting diode chip 110.
  • the light emitting diode 700 emits mixed light in which light wavelength-converted by the first phosphor 181 and light wavelength-converted by the second phosphor 182 are mixed.
  • the light emitting device 700 may emit light of a specific color by using different phosphors without having a plurality of light emitting diode chips 110 that emit light of different colors.
  • FIG 10 is an exemplary view showing a device according to an eighth embodiment of the present invention.
  • the light emitting device 800 includes a light emitting diode chip 110, an encapsulation member 120, and a protection member 140.
  • the encapsulation member 120 is formed to surround the top and side surfaces of the LED chip 110.
  • the encapsulation member 120 may include a phosphor 131 for wavelength converting light emitted from the light emitting diode chip 110.
  • the encapsulation member 120 may further include a filler 132 for preventing the dust, moisture, gas, and the like from penetrating into the light emitting diode chip 110. ) Is formed to cover the top and side surfaces of the sealing member (120).
  • the protection member 140 covers both the top and side surfaces of the encapsulation member 120, cracks may be prevented from occurring at the top and side surfaces of the encapsulation member 120.
  • the light emitting device 800 of the present exemplary embodiment may further include at least one of an adhesive member (not shown) and a reflective member (not shown).

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)

Abstract

La présente invention concerne un dispositif électroluminescent. Le dispositif électroluminescent selon un mode de réalisation de la présente invention comprend : une puce de diode électroluminescente ; un élément d'encapsulation situé au-dessus de la puce de diode électroluminescente ; et un élément de protection situé sur la surface supérieure de l'élément d'encapsulation. Ici, le coefficient de dilatation thermique de l'élément de protection est inférieur au coefficient de dilatation thermique de l'élément d'encapsulation.
PCT/KR2019/004972 2018-04-25 2019-04-24 Dispositif électroluminescent WO2019209034A1 (fr)

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Application Number Priority Date Filing Date Title
KR10-2018-0048104 2018-04-25
KR1020180048104A KR20190124043A (ko) 2018-04-25 2018-04-25 발광 디바이스

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WO2019209034A1 true WO2019209034A1 (fr) 2019-10-31

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CN113054085A (zh) * 2020-04-22 2021-06-29 深圳市聚飞光电股份有限公司 一种led发光件和发光装置

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WO2021071066A1 (fr) 2019-10-07 2021-04-15 오토딘시스 주식회사 Ensemble embrayage à nouvelle structure

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