WO2019179762A1 - Dispositif et procédé servant à mesurer une température de surface de substrats disposés sur un suscepteur rotatif - Google Patents

Dispositif et procédé servant à mesurer une température de surface de substrats disposés sur un suscepteur rotatif Download PDF

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Publication number
WO2019179762A1
WO2019179762A1 PCT/EP2019/055447 EP2019055447W WO2019179762A1 WO 2019179762 A1 WO2019179762 A1 WO 2019179762A1 EP 2019055447 W EP2019055447 W EP 2019055447W WO 2019179762 A1 WO2019179762 A1 WO 2019179762A1
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Prior art keywords
value
measuring
reflectivity
emissivity
values
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PCT/EP2019/055447
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German (de)
English (en)
Inventor
Markus LÜNENBÜRGER
Original Assignee
Aixtron Se
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Publication date
Application filed by Aixtron Se filed Critical Aixtron Se
Publication of WO2019179762A1 publication Critical patent/WO2019179762A1/fr

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Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/0022—Radiation pyrometry, e.g. infrared or optical thermometry for sensing the radiation of moving bodies
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/0003—Radiation pyrometry, e.g. infrared or optical thermometry for sensing the radiant heat transfer of samples, e.g. emittance meter
    • G01J5/0007—Radiation pyrometry, e.g. infrared or optical thermometry for sensing the radiant heat transfer of samples, e.g. emittance meter of wafers or semiconductor substrates, e.g. using Rapid Thermal Processing
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/80—Calibration
    • G01J5/806—Calibration by correcting for reflection of the emitter radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68771—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by supporting more than one semiconductor substrate
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/0022—Radiation pyrometry, e.g. infrared or optical thermometry for sensing the radiation of moving bodies
    • G01J2005/0033—Wheel
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J2005/0074—Radiation pyrometry, e.g. infrared or optical thermometry having separate detection of emissivity

Definitions

  • the invention relates to a method and a measuring V oriques for measuring a surface temperature of an in particular radially offset relative to an axis of rotation on a rotating about the rotational axis susceptor angeordne- th substrate, wherein a position at a radial distance from the rotational axis measurement to a first optical reflectivity value of the surface is measured at a first time, then an optical emissivity value at a second time and then a second optical reflectivity value of the surface at a third time, wherein a temperature measured value corrected with the reflectivity value is calculated from the emissivity value.
  • the invention further relates to a CVD reactor with a heater heated by a rotary drive means in a rotation about a rotation axis, a plurality of particular radially offset to the rotational axis arranged substrate receptacles for receiving substrates having susceptor, with a stationary to the reactor housing radially offset from the axis of rotation on the susceptor arranged measuring point, with an optical emission value measuring device and an optical Reflecti- onswert-measuring device, which are adapted to measure mutually different times at the measuring point emissivity values and reflectivity values on the rotating susceptor, and with an evaluation device which calculates temperature values from the emissivity values corrected by means of the reflectivity values or which calculates raw temperatures from the uncorrected emissivity values which are corrected by means of the measured reflectivity values be.
  • a heater heated by a rotary drive means in a rotation about a rotation axis a plurality of particular radially offset to the rotational axis arranged substrate recept
  • the surface temperature is determined by means of pyrometers.
  • the surface temperatures can be used to control a heating with which the susceptor carrying the substrates is heated to a process temperature.
  • the goal is to achieve the most uniform possible temperature distribution on the substrate surface, even if the substrate bends slightly during the thermal treatment. During bending, a radially uneven contact of the substrate with the bearing surface can cause temperature inhomogeneities.
  • a multi-zone heating with radially different circumferential heaters different radial areas of the susceptor can be heated differently. With rotating substrates on a rotating substrate carrier, the edge regions of the substrate can be heated differently than a central region of the substrate.
  • a different heat transport behavior attributable to a bending of the substrate from the susceptor to the substrate can thereby be compensated.
  • the diameter of a typical wafer is 200 mm.
  • An object of the inventive method is the production of GaN / AlGaN structures on silicon.
  • Essential is the deposition of thin, relatively uniform layers. While the substrate, for example Silicon substrate, for the wavelength of the pyrometer is intransparent, the previously designated layers for the wavelength of the pyrometer are usually semitransparent.
  • the spectral radiation intensity is measured, which starts from the measurement object, ie the substrate surface or from the surface of the susceptor.
  • each radiation intensity can be assigned a temperature.
  • a clear allocation of temperature presupposes that the reflectivity of the
  • Layer surface does not change.
  • the surface emissivity or the surface reflectivity changes greatly during the layer growth.
  • a reflectivity measurement is determined. This is done by means of two mutually different measuring devices, for example, with a pyrometer to determine the emissivity value and a light source and a light detector for determining the reflectivity value.
  • the light source may be a light emitting diode or a laser.
  • the light detector may be a photosensor or phototransistor.
  • the reflectivity measurement takes place at the same measuring wavelength of, for example, 880 nm to 950 nm, at which the emissivity value determination is also carried out. From the emissivity value, a raw temperature value can be determined which is corrected using the reflectivity value. In this way, the Fabry-Perot effect can be compensated.
  • the emissivity value determination and the reflectivity value determination should ideally take place at the same location of the measurement object. In reality, however, this is not possible because the measurements are performed alternately to avoid mutual interference. For example, in pulses of about 100Hz To determine the emission value at a - fixed relative to the reactor housing - fixed measuring point on the rotating susceptor.
  • the determination of the reflectivity of the surface of the measurement object is then performed phase-shifted. Since the susceptor rotates during the measurement and the measuring point is, for example, offset by 200 mm from the axis of rotation, the measuring position on the measuring object moves by about 1 to 2 mm from the time of measuring the emissivity value at the time of measuring the reflectivity value. This has the consequence that the measured emission value does not locally correlate with the measured reflectivity value. However, in the prior art, this reflectivity value is used to correct the raw temperature obtained from the emissivity value. For details of the described measurement method, reference is made to WG Breiland, "Reflectance-Correcting Pyrometry in Thin Film Deposition Applications" 2003 (approved for public release).
  • US 2008/0036997 A1 describes a method for measuring reflection values on rotating substrates.
  • the measurement times are synchronized with the rotation times of the substrate, so that the measuring device supplies time-sequential measured values which are assigned from the same location of the substrate.
  • US 2006/0171442 A1 describes a method for calibrating a pyrometer.
  • US 2012/0293813 Al describes a method for measuring reflection values on a substrate surface.
  • the previously operated measuring method leads to erroneous temperature values, in particular at measuring positions which lie at the edge of the substrate.
  • the invention is based on the object of improving the generic method with regard to the determination of temperature and of specifying a device designed for this purpose.
  • the object is achieved by the invention specified in the claims, wherein the subclaims represent not only advantageous developments of the invention disclosed in the independent claims, but also independent solutions to the problem.
  • a plurality of reflectivity values measured at different times be used to correct in particular exactly one emissivity value.
  • a raw temperature is calculated.
  • This is corrected by the use of at least two reflectivity values, which are measured at two different points in time.
  • the correction can be effected by the formation of an average value between the two reflectivity measured values.
  • a first reflectivity measurement value is determined temporally before the emissivity value and a second reflectivity value is determined temporally after the emissivity value.
  • the average value of these two reflectivity values can be formed in order to obtain one from the emis- value that is measured at a point in time between the two instants at which the reflectivity values are determined, to correct the raw temperature obtained. It can also be a weighted averaging.
  • the two times for determining the reflectivity values used for the correction are preferably immediately adjacent to the time of the determination of the emissivity value.
  • the calculation / correction value formation can be carried out by means of a linear interpolation or by a higher-order interpolation between a plurality of reflectivity measurement values taken in temporally immediately successive fashion.
  • the temperature value obtained by the methods described above can be used to control the heating.
  • An inventive CVD reactor has a susceptor which can be heated by a heating device.
  • the susceptor can rotate about a vertical axis.
  • a rotary drive device is provided which rotates a shaft of the susceptor to bring the firmly connected to the shaft susceptor in a rotation about the drive axis.
  • the heating device is preferably arranged below the susceptor. It may be RF heating, IR heating or other heating.
  • substrate receptacles are provided on the upper side of the susceptor pointing away from the heating. The substrate receptacles can be recesses in the upper side of the susceptor, in which a substrate rests. But they can also be projections for Lüjust réelle.
  • the substrate receptacles are preferably arranged radially offset from the axis of rotation, so that they are arranged on the susceptor fixing substrates off-center of the substrate.
  • a process chamber Above the substrate is a process chamber that is bounded above by a process chamber ceiling.
  • a gas inlet element is provided, with which process gases, for example hydrides of the V main group and organometallic compounds of the III main group are fed into the process chamber.
  • the feed of the process gases is preferably carried out together with a carrier. gergas, for example hydrogen.
  • the gas inlet member may be disposed in the center of the process chamber. It can also extend in a shower head over the entire ceiling of the process chamber.
  • Two measuring devices are provided: a first measuring device with which an emissivity measurement value and a second measuring device can be determined with which a reflectivity value at a measuring position of the surface of the substrate or of the susceptor can be determined.
  • They are preferably optical measuring devices, for example pyrometers, phototransistors or photodiodes.
  • a light source can be used to measure the emissivity.
  • a beam splitter can be achieved that both optical measuring devices have the same beam path, which is preferably directed parallel to the axis of rotation.
  • the measurement can be made through the process chamber ceiling. The latter preferably has an opening for this purpose.
  • the circular arc line (on which the measuring positions are located) can run through the centers of the preferably circular substrates, but the circular arc line can also extend outside the centers of the substrates and in particular by the di e edges of the substrates go through.
  • a plurality of sensor pairs are provided at different radial distances, each sensor pair having a sensor for determining the emissivity value and a sensor for determining the reflectivity value.
  • the fiction, contemporary preamble Direction has an evaluation device with which raw temperature measured values are determined from the emissivity values. For each emissivity value, a raw temperature is determined. This is formed by using at least two reflectivity measured values, which have been determined at mutually different measuring positions on the rotating susceptor, a correction value with which the raw temperature is corrected to a temperature value.
  • the device according to the invention is, in particular, a measuring device for measuring a surface temperature with an evaluation device which uses an emissivity value and at least two reflectivity values to determine a temperature value.
  • FIG. 1 is a schematic sectional view of a first embodiment of a CVD reactor for carrying out the method according to the invention
  • FIG. 2 is a top view of the susceptor 4 arranged thereon substrates 7, as shown in section line II-II in Figure 1,
  • FIG. 3 shows a representation according to FIG. 1 of a second exemplary embodiment
  • FIG. 4 shows a representation according to FIG. 2 of the second exemplary embodiment, Fig. 5 in the form of a curve measured over the angular position
  • Fig. 7 shows schematically the measured at different times ti to t 7
  • the CVD reactors shown in Figures 1 to 4 each have a reactor housing 1, a heater 5 disposed therein, a arranged above the heater 5 susceptor 4 and a gas inlet member 2 for introducing, for example TMGa, TMA1, NH 3 AsHi, PHi and H 2 .
  • the susceptor 4 is driven in rotation about a vertical axis of rotation A by means of a rotary drive device 14.
  • a drive shaft 9 is connected, on the one hand, to the rotary drive device 14 and, on the other hand, to the underside of the susceptor 4.
  • substrates 7 On the technological of the heater 5 horizontal surface of the susceptor 4 are substrates 7.
  • the substrates 7 are located radially outside the axis of rotation A and are held in position by substrate holders which are formed by a cover 8 or by a substrate holder 6.
  • an emission measuring device 10 which is formed by a pyrometer, which measures the emissivity value.
  • a second measuring device 11 is likewise an optimal see measuring device. It has a light detector and a light source. The light source may be a laser. The light detector is a phototransistor. With this reflection value measuring device 11, the reflectivity value is measured. With the two measuring devices 10, 11 emissivity values and reflectivity values can be obtained according to the invention. Via a beam splitter 12, the "measuring beams" of the two measuring devices 10, 11 are combined to form a vertical measuring beam, which is located on a measuring point 13 fixed relative to the reactor housing 1 on the surface of the substrate 7 or of the susceptor 4. With the measuring devices 10, 11, an emission value E and a reflectivity value R of the substrate surface are thus measured.
  • measured values can be determined with the measuring devices 10, 11 at measuring positions lying on a circular line L.
  • the determination of the emissivity value E by means of the Emiss foundedswert- Mes device 10 takes place at periodically successive times t 2 , t 4 (see Figure 6).
  • reflectivity values R are determined.
  • the measurement positions on the susceptor top side and in particular of the substrate surface on the line L are offset in the circumferential direction relative to one another.
  • the positions represented by an X in FIGS. 2 and 4 symbolize the measuring positions for the determination of the emissivity value and the positions shown with an open circle the measuring positions of the reflectivity value determination.
  • the substrates 7 can still rotate about a substrate axis of rotation. They lie on a substrate holder 6, which can rotate about this axis.
  • the line L represented in FIG. 2, on which the measuring positions lie, is therefore more complicated in terms of reality than shown in FIG. 2 for the sake of simplicity.
  • the line forms cycloids on the substrate surfaces.
  • the invention is based on the finding that the reflectivity values R, as shown in FIG. 5, change greatly in the region of the edge of the substrate 7 in a radial direction, relative to the center of the substrate. While the reflectivity values in the central region of the substrate 7 change only slightly along a line running through the center, the reflectivity values at the edge of the substrate change more strongly on a straight line through the diameter of the substrate. The differences between two measured values of the reflectivity determined at respectively equally spaced measuring positions are greater in the edge region than in the central region.
  • the lower curve in the figure 7 shows qualitatively spread the course of the reflectivity of the substrate surface in the radial direction, ie at a migrating over the substrate in the radial direction measuring point as a function of time.
  • the open circles denote the reflectivity values Ri, R 2 , R 3 , R 4 which were measured at the times ti, h, ts and t 7 .
  • emissivity values Ei, E 2 , E3 and E 4 have been measured at times t 2 , t 4 , t 6 , t s. It can be seen that a reflectivity value Ri used to correct for example the emissivity value Ei is too low and a measured value of the reflectivity R 2 used for the correction is too high.
  • an average value Rr or interpolated value is formed from the two adjacent measured values of the reflectivity Ri, R 2 , which is shown in FIG. 7 as a filled square.
  • the calculation of the reflectivity correction value R 2 'of the time to correct the emissivity value E 2 is determined by a quadratic interpolation.
  • the reflectivity values of the correction time point t4 immediately adjacent lying, at times t 3 and ts determined are not only R 2, and R 3 is used but also the reflectivity Ri and R 4, which have been determined at the times ti and t. 7
  • Temperature values Ti, T 2 , T 3 and T 4 which can be used to control the heater 5, can be determined by the correction of the emissivity value Ei, E 2 , E 3 , E 4 that has taken place in such an interpolatory manner.
  • the above explanations serve to explain the of the
  • the invention relates to inventions which have been recorded in their entirety and that independently further develop the state of the art, at least by the following combinations of features, whereby two, several or all of these combinations of features can also be combined, namely: A method or a device, which are characterized in that an emissivity value Ei and a plurality of reflectivity values Ri, Ri + i measured at different times ti, ti + i are used to calculate the temperature value Ti.
  • a method for measuring a surface temperature of a substrate 7 arranged on a susceptor 4 rotating about a rotation axis A wherein at a measuring point 13 spaced radially from the axis of rotation A, optical emissivity values Ei are arranged on the surface and phase-shifted in sequence optical reflectivity values Ri of the surface are measured and from each emissivity value (Ei) a temperature value corrected by the use of at least two reflectivity values Ri, Ri + i measured at different times ti, ti + i is calculated.
  • a method or a device characterized in that the use of the reflectivity values Ri, Ri + i comprises an averaging.
  • a method or a device which is characterized in that the points in time at which the reflectivity values Ri, Ri + i used for the correction are measured are immediately adjacent to the times at which the measurement of the emissivity worth egg.
  • a method or a device which are characterized in that the temperature measured value Ti is used to control a heater 5.
  • a method or a device which is characterized in that the measuring device (10) for measuring the emissivity value Ei is a pyrometer 10 and the measuring device (11) for measuring the reflectivity value Ri comprises an LED and a light detector.
  • a method or a device which are characterized in that the beam path of the two measuring devices 10, 11 is identical.
  • a CVD reactor which is characterized in that the evaluation device 15 is set up such that at least two reflectivity values Ri, Ri + i are used to calculate a temperature value Ti.
  • a method, a device or a CVD reactor which is characterized in that exactly one temperature value is calculated from exactly one emissivity value Ei using a plurality of reflectivity values Ri, Ri + i.
  • a measuring device which is characterized in that the training is W erte Hughes 15 set up so that for calculating a temperature turiness Ti least two reflectivity values Ri, Ri + i are used.

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Abstract

L'invention concerne un procédé ou un dispositif servant à mesurer une température de surface d'un substrat (7) disposé de manière radialement décalée par rapport à un axe de rotation (A) sur un suscepteur (4) tournant autour de l'axe de rotation (A). Une première valeur de réflectivité optique (Ri) de la surface est mesurée à un premier moment (t1), puis une valeur d'émissivité (Ei) est mesurée à un deuxième moment (t2), puis une deuxième valeur de réflectivité optique (Ri+1) de la surface est mesurée à un troisième moment (t3) sur un point de mesure (13) tenu à distance radialement de l'axe de rotation (A). Une valeur de mesure de température (Ti) est calculée à partir de chaque valeur d'émissivité (Ei) et d'au moins deux valeurs de réflectivité (Ri, Ri+1), qui ont été mesurées à des moments (ti, ti+1) différents.
PCT/EP2019/055447 2018-03-20 2019-03-05 Dispositif et procédé servant à mesurer une température de surface de substrats disposés sur un suscepteur rotatif WO2019179762A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102018106481.0A DE102018106481A1 (de) 2018-03-20 2018-03-20 Vorrichtung und Verfahren zum Messen einer Oberflächentemperatur von auf einem drehenden Suszeptor angeordneten Substraten
DE102018106481.0 2018-03-20

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WO2019179762A1 true WO2019179762A1 (fr) 2019-09-26

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DE102020112569A1 (de) 2020-05-08 2021-11-11 AIXTRON Ltd. Gaseinlassorgan mit einem durch ein Einsatzrohr verlaufenden optischen Pfad
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DE102022101809A1 (de) 2022-01-26 2023-07-27 Aixtron Se Verfahren zur emissivitätskorrigierten Pyrometrie

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