WO2019173074A3 - Hard mask composition - Google Patents

Hard mask composition Download PDF

Info

Publication number
WO2019173074A3
WO2019173074A3 PCT/US2019/019448 US2019019448W WO2019173074A3 WO 2019173074 A3 WO2019173074 A3 WO 2019173074A3 US 2019019448 W US2019019448 W US 2019019448W WO 2019173074 A3 WO2019173074 A3 WO 2019173074A3
Authority
WO
WIPO (PCT)
Prior art keywords
hard mask
mask composition
composition
hard
spin
Prior art date
Application number
PCT/US2019/019448
Other languages
French (fr)
Other versions
WO2019173074A2 (en
Inventor
Alex P. G. ROBINSON
Guy Dawson
Alan Brown
Thomas LADA
John Roth
Edward Jackson
Original Assignee
Robinson Alex P G
Guy Dawson
Alan Brown
Lada Thomas
John Roth
Edward Jackson
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US15/904,420 external-priority patent/US11746255B2/en
Application filed by Robinson Alex P G, Guy Dawson, Alan Brown, Lada Thomas, John Roth, Edward Jackson filed Critical Robinson Alex P G
Priority to JP2020544630A priority Critical patent/JP7252244B2/en
Priority to KR1020207027605A priority patent/KR102638159B1/en
Priority to CN201980015053.1A priority patent/CN112119133B/en
Publication of WO2019173074A2 publication Critical patent/WO2019173074A2/en
Publication of WO2019173074A3 publication Critical patent/WO2019173074A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02115—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material being carbon, e.g. alpha-C, diamond or hydrogen doped carbon
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00—Use of inorganic substances as compounding ingredients
    • C08K3/02—Elements
    • C08K3/04—Carbon
    • C08K3/045—Fullerenes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02118—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating

Landscapes

  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Materials For Photolithography (AREA)
  • Paints Or Removers (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)

Abstract

Disclosed and claimed herein is a composition for forming a spin-on hard-mask, having a fullerene derivative substituted with an amine and a crosslinking agent. The formulation is drain compatible with other solvents used in the semiconductor industry.
PCT/US2019/019448 2018-02-25 2019-02-25 Hard mask composition WO2019173074A2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2020544630A JP7252244B2 (en) 2018-02-25 2019-02-25 hard mask composition
KR1020207027605A KR102638159B1 (en) 2018-02-25 2019-02-25 Hard mask composition
CN201980015053.1A CN112119133B (en) 2018-02-25 2019-02-25 Hard mask composition

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US15/904,420 2018-02-25
US15/904,420 US11746255B2 (en) 2016-05-25 2018-02-25 Hard-mask composition

Publications (2)

Publication Number Publication Date
WO2019173074A2 WO2019173074A2 (en) 2019-09-12
WO2019173074A3 true WO2019173074A3 (en) 2019-12-12

Family

ID=67847517

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2019/019448 WO2019173074A2 (en) 2018-02-25 2019-02-25 Hard mask composition

Country Status (4)

Country Link
JP (1) JP7252244B2 (en)
KR (1) KR102638159B1 (en)
CN (1) CN112119133B (en)
WO (1) WO2019173074A2 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11545354B2 (en) 2020-07-22 2023-01-03 Applied Materials, Inc. Molecular layer deposition method and system
US11972940B2 (en) 2022-04-18 2024-04-30 Applied Materials, Inc. Area selective carbon-based film deposition

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100778244B1 (en) * 2002-05-30 2007-11-27 주식회사 동진쎄미켐 ORGANIC BOTTOM ANTI-REFLECTIVE FILM FOR ArF PHOTORESIST AND METHOD FOR PREPARING THE SAME
US20120004476A1 (en) * 2009-01-29 2012-01-05 Korea Research Institute Of Chemical Technology Fullerene Derivatives and Organic Electronic Device Comprising the Same
WO2013117908A1 (en) * 2012-02-10 2013-08-15 The University Of Birmingham Spin on hard-mask material

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101019331B1 (en) * 2001-04-17 2011-03-07 브레우어 사이언스 인코포레이션 Anti-reflective composition with improved spin bowl compatibility
JP4748055B2 (en) * 2006-12-27 2011-08-17 Ｊｓｒ株式会社 Resist underlayer film forming composition and pattern forming method
KR101423059B1 (en) * 2007-04-06 2014-07-25 닛산 가가쿠 고교 가부시키 가이샤 Composition for forming under-resist film
JP5350718B2 (en) * 2007-12-20 2013-11-27 三菱商事株式会社 Aminated fullerene
US9070548B2 (en) * 2012-03-06 2015-06-30 Rohm And Haas Electronic Materials Llc Metal hardmask compositions
US9256126B2 (en) * 2012-11-14 2016-02-09 Irresistible Materials Ltd Methanofullerenes
US9632409B2 (en) * 2013-05-22 2017-04-25 Irresistible Materials Ltd Fullerenes
WO2016058008A2 (en) * 2014-10-08 2016-04-14 Robinson Alex Phillip Graham Spin on hard-mask material
KR101907499B1 (en) * 2015-11-20 2018-10-12 삼성에스디아이 주식회사 Method of producimg layer structure, and method of forming patterns
KR102015406B1 (en) * 2016-01-25 2019-08-28 삼성에스디아이 주식회사 Method of producimg layer structure, and method of forming patterns
US10438808B2 (en) * 2016-05-25 2019-10-08 Irresistible Materials, Ltd Hard-mask composition

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100778244B1 (en) * 2002-05-30 2007-11-27 주식회사 동진쎄미켐 ORGANIC BOTTOM ANTI-REFLECTIVE FILM FOR ArF PHOTORESIST AND METHOD FOR PREPARING THE SAME
US20120004476A1 (en) * 2009-01-29 2012-01-05 Korea Research Institute Of Chemical Technology Fullerene Derivatives and Organic Electronic Device Comprising the Same
WO2013117908A1 (en) * 2012-02-10 2013-08-15 The University Of Birmingham Spin on hard-mask material

Also Published As

Publication number Publication date
JP7252244B2 (en) 2023-04-04
KR20200125662A (en) 2020-11-04
CN112119133B (en) 2022-05-24
CN112119133A (en) 2020-12-22
WO2019173074A2 (en) 2019-09-12
KR102638159B1 (en) 2024-02-19
JP2021515068A (en) 2021-06-17

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